WO2020116248A1 - Dispositif de traitement au plasma - Google Patents

Dispositif de traitement au plasma Download PDF

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Publication number
WO2020116248A1
WO2020116248A1 PCT/JP2019/046221 JP2019046221W WO2020116248A1 WO 2020116248 A1 WO2020116248 A1 WO 2020116248A1 JP 2019046221 W JP2019046221 W JP 2019046221W WO 2020116248 A1 WO2020116248 A1 WO 2020116248A1
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WO
WIPO (PCT)
Prior art keywords
dielectric
plasma processing
processing apparatus
plasma
electrode
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PCT/JP2019/046221
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English (en)
Japanese (ja)
Inventor
池田　太郎
田中　澄
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東京エレクトロン株式会社
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Publication of WO2020116248A1 publication Critical patent/WO2020116248A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the exemplary embodiments of the present disclosure relate to a plasma processing apparatus.
  • the conventional plasma processing apparatus is described in Patent Documents 1 to 6. Although there are various types of plasma generation methods, a capacitively coupled plasma (CCP) processing apparatus using a very high frequency (VHF) band frequency for plasma generation is drawing attention.
  • the VHF band is a frequency in the range of about 30 MHz to 300 MHz.
  • JP-A-2000-323456 Japanese Patent No. 4364667 Japanese Patent No. 5317992 Japanese Patent No. 5367,000 Japanese Patent No. 5513104 JP, 2011-44446, A JP 2004-247401 A
  • a plasma processing apparatus includes an upper electrode and a lower electrode facing each other in a processing container, wherein the plasma processing apparatus generates plasma in a space between these electrodes.
  • the lower electrode has recesses on the surfaces facing each other, and an upper dielectric and a lower dielectric are provided in the recesses of the upper electrode and the lower electrode, respectively.
  • a VHF wave introduction portion is provided at a lateral end portion of the space between and.
  • the plasma distribution can be made uniform.
  • FIG. 1 is an explanatory diagram showing a device configuration of a plasma processing apparatus.
  • FIG. 2 is a vertical cross-sectional view of a plasma processing apparatus for explaining an example of a gas introduction structure.
  • FIG. 3 is a vertical cross-sectional view of a plasma processing apparatus for explaining another example of the gas introduction structure.
  • FIG. 4 is a vertical cross-sectional view of a plasma processing apparatus for explaining still another example of the gas introduction structure.
  • FIG. 5 is a vertical cross-sectional view of a plasma processing apparatus for explaining still another example of the gas introduction structure.
  • FIG. 6 is a vertical cross-sectional view of a plasma processing apparatus for explaining still another example of the gas introduction structure.
  • the first plasma processing apparatus includes an upper electrode and a lower electrode that are arranged to face each other in a processing container, and in the plasma processing apparatus that generates plasma in a space between these electrodes, the upper electrode and the lower electrode are respectively A recess is provided on the surface facing each other, and an upper dielectric and a lower dielectric are provided in the recess of each of the upper electrode and the lower electrode, and the space between the upper dielectric and the lower dielectric is provided. It is characterized in that a VHF wave introduction portion is provided at an end portion in the lateral direction of the space.
  • the introduction part of the VHF wave is located at the lateral end (horizontal end), and since the VHF wave is introduced from various lateral directions into this space, a standing wave is formed. It is hard to be done.
  • the electric field vector generated between the upper electrode and the lower electrode tends to incline downward from the vertical direction in the outer peripheral region of the electrode, but the upper electrode and the lower electrode are each provided with a recess. Since the upper dielectric and the lower dielectric are provided, the electric field vector can be made uniform in the plane by these dielectrics. Therefore, the plasma distribution generated between the upper electrode and the lower electrode can be made uniform by introducing the VHF wave in the lateral direction and making the electric field vector direction uniform.
  • the upper dielectric and the lower dielectric are each characterized in that the outer peripheral portion is thinner than the central portion.
  • the direction and magnitude of the electric field vector affected by the dielectric material also depend on the thickness thereof, it is possible to improve the in-plane uniformity of the electric field vector strength by setting the electric field vector to be thin at the outer peripheral portion.
  • the surface of the dielectric material opposite to the plasma generating space may be inclined like a mortar. With this inclination, the corresponding electric field vector can be directed more vertically, and the in-plane plasma uniformity can be enhanced.
  • the third plasma processing apparatus is characterized in that the upper dielectric and the lower dielectric are coaxially arranged with the space in between. That is, when the axes between the electrodes are aligned, the in-plane uniformity of plasma can be improved.
  • a vertical separation distance ⁇ zup from the lower surface of the upper dielectric to the introduction portion, and a vertical separation distance ⁇ zdown from the upper surface of the lower dielectric to the introduction portion are characterized by being equal.
  • these distances are equal, the distances from the VHF wave introduction position to the respective dielectrics are equal, and therefore the plasma caused by the VHF waves tends to be uniform in the vertical direction.
  • the plasma processing apparatus according to the embodiment will be described. The same elements will be denoted by the same reference symbols, without redundant description.
  • FIG. 1 is an explanatory diagram showing a device configuration of the plasma processing apparatus 100.
  • a three-dimensional orthogonal coordinate system is set.
  • the vertical direction of the plasma processing apparatus is the Z-axis direction, and the two directions perpendicular to this are the X-axis and the Y-axis, respectively.
  • the plasma processing apparatus 100 includes an upper electrode 5 and a lower electrode 6 that are arranged to face each other in the processing container 1, and in the plasma processing apparatus that generates plasma in a space SP between these electrodes, the upper electrode 5 and the lower electrode 6 are provided. Are provided with recesses 5d and 6d on the surfaces facing each other. Further, an upper dielectric 7 and a lower dielectric 8 are provided in the recesses of the upper electrode 5 and the lower electrode 6, respectively, and a lateral end portion of the space SP between the upper dielectric 7 and the lower dielectric 8 is provided. Is provided with a VHF wave introducing unit 9.
  • a VHF wave waveguide 2 made of a dielectric plate is provided on the upper open end of the processing container 1, and a lid member 3 is provided on the VHF wave waveguide 2 if necessary.
  • the center of the lid member 3 is open, the side wall around the opening constitutes the outer conductor 3a of the coaxial tube, and the inner conductor 3b is arranged at the axial center.
  • the inner conductor 3b is integrally formed with the upper electrode 5 and is electrically connected thereto.
  • a mortar-shaped recess 5d is formed on the lower surface of the upper electrode 5, and the upper dielectric 7 is embedded in the recess 5d.
  • the lower surface of the upper dielectric 7 is flat and parallel to the XY plane.
  • the planar shapes of the upper dielectric 7 and the upper electrode 5 are circular.
  • the upper dielectric 7 has a large thickness in the central portion and a small thickness in the outer peripheral portion.
  • the central region of the upper surface of the upper dielectric 7 is flat and parallel to the XY plane, and the outermost region is also flat and parallel to the XY plane, but the region between them is a conical surface, and from top to bottom. It is composed of an inclined surface whose diameter of the plane shape increases toward the side.
  • a mortar-shaped recess 6d is formed on the upper surface of the lower electrode 6, and the lower dielectric 8 is embedded in the recess 6d.
  • the upper surface of the lower dielectric 8 is flat and parallel to the XY plane. Further, the planar shapes (shapes viewed from the Z-axis direction) of the lower dielectric 8 and the lower electrode 6 are circular.
  • the lower dielectric 8 has a large thickness in the central portion and a small thickness in the outer peripheral portion.
  • the central region of the lower surface of the lower dielectric 8 is flat and parallel to the XY plane, and the outermost region is also flat and parallel to the XY plane, but the region between them is a conical surface, and from the bottom to the top. It is composed of an inclined surface whose diameter of the plane shape increases toward the side.
  • the VHF wave introduced in the central part of the VHF wave waveguide 2 in the horizontal direction travels radially to the peripheral part along the horizontal direction. After that, the VHF wave travels downward in a waveguide 1w formed of a concave portion (planar shape is circular ring-shaped, depth is in the Z-axis direction) provided in the side wall of the processing container 1, and reaches the VHF wave introducing portion 9. It is introduced and proceeds from the outer peripheral portion toward the central portion.
  • the planar shape of the VHF wave introducing unit 9 is a circular ring shape, and the VHF wave travels from all horizontal azimuths toward the axial center of the processing container.
  • the VHF wave introducing unit 9 is located in the lateral direction of the plasma generation space SP.
  • the VHF wave generated from the VHF wave generator 13 is introduced into the horizontal VHF wave waveguide 2 through the waveguide. After that, as described above, when the VHF wave is introduced from the VHF wave introducing unit 9 between the upper electrode 5 and the lower electrode 6, the gas inside the processing container is turned into plasma and plasma is generated. In this case, the VHF wave introducing unit 9 is located at the lateral end (horizontal end), and since VHF waves are introduced from various lateral directions into this space, a standing wave is formed. There is an advantage that it is hard to be done.
  • the electric field vector generated between the upper electrode 5 and the lower electrode 6 tends to incline downward from the vertical direction in the outer peripheral region of the electrode. A recess is provided.
  • the electric field vector can be made uniform in the plane by these dielectrics. Therefore, the plasma distribution generated between the upper electrode 5 and the lower electrode 6 can be made uniform in the plane by introducing the VHF wave in the lateral direction and making the direction of the electric field vector uniform.
  • the upper dielectric 7 and the lower dielectric 8 each have a thinner outer peripheral portion than a central portion.
  • the direction and magnitude of the electric field vector affected by the dielectric material also depends on its thickness. Therefore, by setting it thin on the outer periphery of the dielectric material, the in-plane uniformity of the electric field vector strength can be improved.
  • the surfaces on the side opposite to the plasma generation space SP are inclined like a mortar. With this inclination, the corresponding electric field vector can be directed more vertically, and the in-plane plasma uniformity can be enhanced. That is, the upper dielectric 7 and the lower dielectric 8 have a lens function of bending the electric field vector.
  • the upper dielectric 7 and the lower dielectric 8 are coaxially arranged with the space SP in between. That is, the in-plane uniformity of plasma can be improved when the axes between the electrodes are aligned. Further, the vertical distance ⁇ zup from the lower surface of the upper dielectric 7 to the VHF wave introducing portion 9 is equal to the vertical distance ⁇ zdown from the upper surface of the lower dielectric 8 to the VHF wave introducing portion 9. When these distances are equal, the distances from the VHF wave introduction position to the respective dielectrics are equal, and therefore the plasma caused by the VHF waves tends to be uniform in the vertical direction.
  • the distance ⁇ z between the upper dielectric 7 and the lower dielectric 8 is preferably, for example, 5 mm to 80 mm from the viewpoint of generating uniform plasma. Further, the distance ⁇ x, which is the difference between the radius of the upper dielectric body 7 and the radius of the lower dielectric body 8, is preferably close to zero. This is because the plasma generation conditions are symmetrical and the plasma uniformity is improved.
  • the lower electrode 6 can be moved vertically by the drive stage DRV. As a result, plasma can be generated under optimum conditions. Further, the lower electrode 6 is provided with a temperature adjusting device TEMP.
  • the temperature control device TEMP includes a medium passage for flowing a cooling medium, a heater, and a temperature sensor, and the control device 12 controls the lower electrode 6 to have a target temperature. For example, if the target temperature is T1° C., if the output of the temperature sensor is smaller than T1° C., the heater is heated, and if it is higher than T1° C., the heater is not heated and the cooling medium is flown into the medium passage. , It should be controlled.
  • the control device 12 also controls the exhaust device 14.
  • the exhaust device 14 exhausts the gas in the annular exhaust passage 4 provided in the outer wall of the processing container 1.
  • the exhaust passage 4 is provided in the lateral direction of the plasma generation space SP, and communicates with a plurality of exhaust holes provided along the circumferential direction on the inner surface of the processing container. Thereby, the gas in the plasma generation space SP can be exhausted, and the pressure in this space can be set to an appropriate value. This pressure may be changed depending on the processing content, but can be set to 0.1 Pa to 100 Pa, for example.
  • a pump normally used in a vacuum system device such as a rotary pump, an ion pump, a cryostat, or a turbo molecular pump can be adopted.
  • the control device 12 controls the flow rate controller 11 that controls the flow rate of the gas generated from the gas source 10.
  • the flow rate controller 11 may be a simple valve. As a result, the target gas can be introduced into the processing container 1.
  • the controller 12 also controls the VHF wave generator 13.
  • the frequency of the VHF wave is about 30 MHz to 300 MHz.
  • gases that can be used for the gas source 10 include noble gases such as Ar, gases containing carbon and fluorine such as CF 4 and C 4 F 8 and gases such as N 2 and O 2 .
  • Aluminum can be used as the material of the upper electrode 5 and the lower electrode 6.
  • Aluminum nitride (AlN) can be used as a material for the upper dielectric body 7 and the lower dielectric body 8.
  • quartz can be used as the material of the VHF wave waveguide 2 in the horizontal direction, air may be used as long as the waveguide can be formed.
  • silicon or the like can be used, and processing such as film formation or etching can be performed on this substrate.
  • an electrostatic chuck may be provided, a DC bias potential may be applied to the lower dielectric 8, or a high frequency voltage may be applied between the upper and lower electrodes in some cases.
  • a configuration in which a magnet is arranged in the is also conceivable.
  • FIG. 2 is a vertical cross-sectional view of a plasma processing apparatus for explaining an example of a gas introduction structure.
  • a through hole along the Z-axis direction is formed in the inner conductor 3b located in the center of the upper electrode 5, and a hole communicating with this is also formed in the upper dielectric 7.
  • Other structures are as described above. In such a case, there is a problem that the gas concentration in the central portion of the processing container becomes higher than that in the peripheral portion.
  • FIG. 3 is a vertical cross-sectional view of a plasma processing apparatus for explaining another example of the gas introduction structure.
  • the upper dielectric 7 in the apparatus of FIG. 2 has a shower structure having a plurality of through holes. Thereby, the in-plane uniformity of gas concentration can be improved.
  • FIG. 4 is a vertical cross-sectional view of a plasma processing apparatus for explaining still another example of the gas introduction structure.
  • a through hole is formed in the VHF wave waveguide 2.
  • the through-hole has an annular shape in a plan view, and a ring-shaped tube of an insulator made of alumina (Al 2 O 3 ) is arranged in the through-hole to form the gas introduction passage 2A. Since the outer conductor 3a is only required near the center of the VHF wave waveguide 2, the remaining portion of the lid member is removed from the VHF wave waveguide 2. In this case, an appropriate gas storage space is provided in the gas introduction passage 2A, and gas is introduced into the gas introduction passage 2A from this space.
  • a gas passage is formed inside the upper electrode 5, and reaches the upper dielectric body 7 of the shower structure through the gas passage and the gas diffusion plate 7A.
  • the gas diffusion plate 7A is a diffuser and has a plurality of through holes formed therein.
  • the material of the gas diffusion plate 7A is made of an insulator such as AlN, alumina, or SiO 2, but it may be made of a mesh electrode or the like.
  • FIG. 5 is a vertical cross-sectional view of a plasma processing apparatus for explaining still another example of the gas introduction structure.
  • FIG. 6 is a vertical cross-sectional view of a plasma processing apparatus for explaining still another example of the gas introduction structure.
  • the VHF wave waveguide 2 described above is a solid dielectric, but it may be air. That is, in the upper structure of the processing container 1, the waveguide 2w extending in the horizontal direction and communicating with the waveguide 1w formed of a recess provided in the side wall of the processing container 1 is formed instead of the solid dielectric waveguide. Then, the insulator block 2B made of a ring-shaped insulator is arranged between the outer conductor 3a and the inner conductor 3b. As a result, the VHF wave introduced from the upper part of the insulator block 2B reaches the vertical waveguide 1w through the horizontal waveguide 2w, and is introduced into the processing container through the VHF wave introducing unit 9. To be done.
  • the thickness ⁇ Z of the insulator block 2B in the Z-axis direction is set so as to function as an impedance converter that converts the plasma load impedance with respect to the wavelength ⁇ of the VHF wave (120 MHz to 240 MHz in frequency conversion in this example). To do.
  • the impedance conversion unit matches the characteristic impedance of the coaxial tubes (3a, 3b) with the impedance of the antenna unit (waveguide 2, block 2B and subsequent portions, introduction unit 9, upper dielectric 7).

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention concerne un dispositif de traitement au plasma qui est capable de permettre une distribution de plasma uniforme. Le dispositif de traitement au plasma est pourvu d'une électrode supérieure et d'une électrode inférieure disposées en regard l'une de l'autre dans un conteneur de traitement et génère un plasma dans l'espace entre les électrodes, l'électrode supérieure et l'électrode inférieure étant respectivement pourvues de parties évidées sur les faces en regard, et un diélectrique supérieur et un diélectrique inférieur sont respectivement disposés dans les parties évidées de l'électrode supérieure et de l'électrode inférieure, et une partie d'introduction d'onde VHF est disposée dans une partie d'extrémité horizontale de l'espace SP entre le diélectrique supérieur et le diélectrique inférieur.
PCT/JP2019/046221 2018-12-06 2019-11-26 Dispositif de traitement au plasma WO2020116248A1 (fr)

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JP2018-229253 2018-12-06
JP2018229253A JP2020092033A (ja) 2018-12-06 2018-12-06 プラズマ処理装置

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JP2022098353A (ja) 2020-12-21 2022-07-01 東京エレクトロン株式会社 プラズマ処理装置
JP2023020600A (ja) 2021-07-30 2023-02-09 東京エレクトロン株式会社 プラズマ処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03111577A (ja) * 1989-09-26 1991-05-13 Idemitsu Petrochem Co Ltd マイクロ波プラズマ発生装置およびそれを利用するダイヤモンド膜の製造方法
JPH09503350A (ja) * 1994-05-13 1997-03-31 アプライド マテリアルズ インコーポレイテッド 有磁気場励起マルチ容量プラズマ発生装置および関連方法
JP2001250815A (ja) * 2000-03-06 2001-09-14 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
JP2003506889A (ja) * 1999-08-10 2003-02-18 ユナキス・トレーディング・アクチェンゲゼルシャフト 面積の大きな基板の処理のためのプラズマ反応装置
JP2007505450A (ja) * 2003-09-10 2007-03-08 ユナキス・バルツェルス・アクチェンゲゼルシャフト 長方形状大面積基板処理用の高周波プラズマ反応器のための電圧不均一性補償方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03111577A (ja) * 1989-09-26 1991-05-13 Idemitsu Petrochem Co Ltd マイクロ波プラズマ発生装置およびそれを利用するダイヤモンド膜の製造方法
JPH09503350A (ja) * 1994-05-13 1997-03-31 アプライド マテリアルズ インコーポレイテッド 有磁気場励起マルチ容量プラズマ発生装置および関連方法
JP2003506889A (ja) * 1999-08-10 2003-02-18 ユナキス・トレーディング・アクチェンゲゼルシャフト 面積の大きな基板の処理のためのプラズマ反応装置
JP2001250815A (ja) * 2000-03-06 2001-09-14 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
JP2007505450A (ja) * 2003-09-10 2007-03-08 ユナキス・バルツェルス・アクチェンゲゼルシャフト 長方形状大面積基板処理用の高周波プラズマ反応器のための電圧不均一性補償方法

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