WO2020113650A1 - Oled 触控显示屏及其制作方法 - Google Patents

Oled 触控显示屏及其制作方法 Download PDF

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Publication number
WO2020113650A1
WO2020113650A1 PCT/CN2018/121000 CN2018121000W WO2020113650A1 WO 2020113650 A1 WO2020113650 A1 WO 2020113650A1 CN 2018121000 W CN2018121000 W CN 2018121000W WO 2020113650 A1 WO2020113650 A1 WO 2020113650A1
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Prior art keywords
layer
inorganic insulating
insulating layer
oled
metal
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English (en)
French (fr)
Inventor
叶剑
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/332,792 priority Critical patent/US11005068B1/en
Publication of WO2020113650A1 publication Critical patent/WO2020113650A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the invention relates to the technical field of touch display, in particular to an OLED touch display screen and a manufacturing method thereof.
  • OLED Organic Light-Emitting Diode
  • LCD liquid crystal displays
  • OLED has the advantages of more power saving, thinner, and wide viewing angle, which is unmatched by LCD.
  • people are increasingly demanding the fineness of display, that is, resolution, but the production of high-quality, high-resolution OLED displays still faces many challenges.
  • OLED displays have many advantages, they also have their own shortcomings, one of which is low photon utilization. Due to factors such as reflection and refraction of indium tin oxide (ITO) and glass substrates, various functional layers inside OLED devices, about 70% of photons cannot escape into the air, resulting in low photon utilization. In order to improve the light extraction efficiency of the device, researchers have proposed many methods, such as changing the structure of the device electrode, inserting a light extraction layer inside the OLED, or etching various microstructures on the substrate surface.
  • ITO indium tin oxide
  • the touch panel provides a new human-machine interactive interface, which is more direct and user-friendly in use. Integrating the touch screen and the flat display device to form a touch display device can enable the flat display device to have a touch function, and can perform input through fingers, a stylus pen, etc. The operation is more intuitive and simple.
  • the more commonly used touch technology includes external touch technology and embedded touch technology.
  • the external touch technology is a method of embedding the touch screen between the color filter substrate and the polarizer of the display screen, that is, a touch sensor is arranged on the liquid crystal panel, which is more difficult than the embedded touch technology Reduced a lot.
  • the touch sensor is generally fabricated on the OLED layer. The specific process is as follows: first, the TFT layer including the substrate is fabricated, and then the OLED is fabricated on the TFT layer Layer, the encapsulation layer is made on the OLED layer, and finally the touch function layer is made on the encapsulation layer.
  • the touch function layer generally includes a first insulating layer, a bridge point layer, a second insulating layer, an electrode circuit layer and an organic protective layer which are sequentially arranged from bottom to top, wherein the bridge point layer includes a plurality of metal bridges in the pixel area
  • the electrode circuit layer includes a touch driving electrode (Tx) and a touch sensing electrode (Rx).
  • the touch driving electrode or the touch sensing electrode is connected to the metal bridge through a contact hole penetrating the second insulating layer.
  • the conductive layer of the touch panel is mainly formed on the insulating substrate by the process of vacuum coating and pattern etching of indium tin oxide compound, which not only has high requirements on process and equipment, but also wastes a lot of indium tin oxide compound in etching Materials, and industrial waste liquids that produce large amounts of heavy metals; meanwhile, the metal indium (In) in the indium tin oxide compound is a rare resource, resulting in higher cost of the touch panel.
  • Metal Mesh TP Metal Mesh TP
  • the conductive layer of the sensing layer uses metal mesh instead of indium tin oxide compound to make touch electrodes.
  • ITO indium tin oxide
  • metal mesh The grid has good electrical properties and low square resistance, and can be used in large-size touch display products.
  • the object of the present invention is to provide an OLED touch display screen, which can increase the light coupling output rate, further block the invasion of water and oxygen, reduce the risk of corrosion damage of the OLED light emitting device, and increase the life of the OLED device.
  • the purpose of the present invention is also to provide a method for manufacturing an OLED touch display screen, which can increase the light coupling output rate, further block the invasion of water and oxygen, reduce the risk of corrosion damage of the OLED light emitting device, and increase the life of the OLED device.
  • the present invention provides an OLED touch display screen, which includes a substrate substrate and a TFT layer, an OLED light emitting layer, an encapsulation layer, and a touch function layer which are sequentially arranged on the substrate substrate;
  • the touch function layer includes a first inorganic insulating layer provided on the encapsulation layer, a metal bridge point layer provided on the first inorganic insulating layer, and covering the metal on the first inorganic insulating layer A second inorganic insulating layer of the bridge point layer, a metal mesh layer provided on the second inorganic insulating layer, and an organic protective layer covering the metal mesh layer on the second inorganic insulating layer;
  • the OLED light emitting layer has a pixel spacing area and a light emitting pixel area separated by the pixel spacing area;
  • the metal bridge point layer and the metal grid layer are correspondingly located above the pixel spacing area;
  • the first inorganic insulating layer and the second inorganic insulating layer together form an inorganic insulating layer, and the surface of the inorganic insulating layer in contact with the organic protective layer has a plurality of grooves respectively corresponding to the light-emitting pixel regions, so
  • the organic protective layer fills a plurality of grooves on the second inorganic insulating layer, and the surface of the organic protective layer in contact with the second inorganic insulating layer has a plurality of protrusions respectively corresponding to the embedded grooves Up.
  • the depth of the groove is smaller than the thickness of the second inorganic insulating layer, and the groove is provided in the second inorganic insulating layer.
  • the depth of the groove is greater than the thickness of the second inorganic insulating layer, and the groove penetrates the second inorganic insulating layer and extends to the first inorganic insulating layer.
  • the encapsulation layer includes an inorganic barrier layer and an organic buffer layer that are alternately stacked;
  • the material of the organic protective layer is the same as the material of the organic buffer layer
  • the material of the organic protective layer includes at least one of acrylic acid, hexamethyldisiloxane, acrylates, polycarbonates and polystyrene.
  • the metal grid layer includes a plurality of first electrodes and a plurality of second electrodes interlaced with the plurality of first electrodes, each of the first electrodes is on the second inorganic insulating layer and the second electrode At the staggered position relative to the second electrode is disconnected;
  • the metal bridge point layer includes a plurality of metal bridges correspondingly located below the intersection of the first electrode and the second electrode;
  • the second inorganic insulating layer is provided with contact holes above the two ends corresponding to each of the metal bridges;
  • the first electrode is connected to the metal bridge through the contact hole, and each first electrode that is intermittent on the second inorganic insulating layer is connected through the metal bridge.
  • the invention also provides a method for manufacturing an OLED touch display screen, including the following steps:
  • Step S1 Provide a base substrate on which a TFT layer, an OLED light emitting layer and an encapsulation layer are sequentially formed;
  • the OLED light emitting layer has a pixel spacing area and a light emitting pixel area separated by the pixel spacing area;
  • Step S2 Deposit and form a first inorganic insulating layer on the encapsulation layer
  • Step S3 deposit and pattern a metal bridge point layer on the first inorganic insulating layer
  • Step S4 Deposit and form a second inorganic insulating layer covering the metal bridge point layer on the first inorganic insulating layer, and the first inorganic insulating layer and the second inorganic insulating layer together form an inorganic insulating layer;
  • Step S5 Patterning the inorganic insulating layer to form a plurality of grooves respectively corresponding to the light emitting pixel area on the surface of the inorganic insulating layer;
  • Step S6 deposit and pattern on the second inorganic insulating layer to form a metal grid layer corresponding to the pixel spacing area;
  • Step S7 forming an organic protective layer covering the metal grid layer on the two inorganic insulating layers, the organic protective layer filling a plurality of grooves on the inorganic insulating layer, so that the organic protective layer
  • the surface contacted by the second inorganic insulating layer forms a plurality of protrusions respectively corresponding to the embedded recesses.
  • step S5 the depth of the groove is less than the thickness of the second inorganic insulating layer, and the groove is provided in the second inorganic insulating layer.
  • step S5 the depth of the groove is greater than the thickness of the second inorganic insulating layer, and the groove penetrates the second inorganic insulating layer and extends to the first inorganic insulating layer.
  • the encapsulation layer includes an inorganic barrier layer and an organic buffer layer alternately stacked;
  • the material of the organic protective layer is the same as the material of the organic buffer layer
  • the material of the organic protective layer includes at least one of acrylic acid, hexamethyldisiloxane, acrylates, polycarbonates and polystyrene.
  • the metal bridge point layer includes multiple metal bridges
  • the step S5 further includes forming contact holes penetrating the second inorganic insulating layer above the ends corresponding to each of the metal bridges;
  • the metal mesh layer includes a plurality of first electrodes and a plurality of second electrodes interlaced with the plurality of first electrodes, each of the first electrodes is on the second inorganic insulating layer The intersecting position with the second electrode is disconnected with respect to the second electrode;
  • the metal bridge is correspondingly located below the intersection of the first electrode and the second electrode;
  • the first electrode is connected to the metal bridge through the contact hole, and each first electrode that is intermittent on the second inorganic insulating layer is connected through the metal bridge.
  • the OLED touch display screen of the present invention includes a base substrate and a TFT layer, an OLED light emitting layer, an encapsulation layer and a touch function layer which are sequentially arranged on the base substrate; the touch function The layer includes a first inorganic insulating layer, a metal bridge point layer, a second inorganic insulating layer, a metal mesh layer and an organic protective layer arranged in sequence; the first inorganic insulating layer and the second inorganic insulating layer together constitute an inorganic insulating layer,
  • the surface of the inorganic insulating layer in contact with the organic protective layer has a plurality of grooves respectively corresponding to the area above the light-emitting pixel area, and the surface of the organic protective layer in contact with the second inorganic insulating layer has a plurality of Corresponding to the protrusion embedded in the plurality of grooves; the touch function layer uses a metal grid (Metal Mesh) electrode structure, the metal bridge point layer and the metal mesh layer
  • FIG. 1 is a schematic structural diagram of a first embodiment of an OLED touch display screen of the present invention
  • FIG. 2 is a schematic structural view of a second embodiment of the OLED touch display screen of the present invention.
  • FIG. 3 is a schematic flowchart of the method for manufacturing an OLED touch display screen of the present invention.
  • step S1 is a schematic diagram of step S1 of the method for manufacturing an OLED touch display screen of the present invention.
  • step S2 is a schematic diagram of step S2 of the method for manufacturing an OLED touch display screen of the present invention.
  • step S3 is a schematic diagram of step S3 of the manufacturing method of the OLED touch display screen of the present invention.
  • step S4 is a schematic diagram of step S4 of the manufacturing method of the OLED touch display screen of the present invention.
  • step S5 is a schematic diagram of step S5 of the method for manufacturing an OLED touch display screen of the present invention.
  • step S6 is a schematic diagram of step S6 of the manufacturing method of the OLED touch display screen of the present invention.
  • FIG. 1 is a schematic structural diagram of a first embodiment of an OLED touch display screen of the present invention.
  • This embodiment includes a base substrate 90 and a TFT layer 10 disposed on the base substrate 90 from bottom to top, and OLED emits light.
  • the touch function layer 40 includes a first inorganic insulating layer 41 provided on the encapsulation layer 30, a metal bridge point layer 42 provided on the first inorganic insulating layer 41, and the first inorganic insulating layer 41 a second inorganic insulating layer 43 covering the metal bridge point layer 42, a metal mesh layer 44 provided on the second inorganic insulating layer 43, and covering the metal on the second inorganic insulating layer 43
  • the organic protective layer 45 of the mesh layer 44 is provided on the encapsulation layer 30, a metal bridge point layer 42 provided on the first inorganic insulating layer 41, and the first inorganic insulating layer 41 a second inorganic insulating layer 43 covering the metal bridge point layer 42, a metal mesh layer 44 provided on the second inorganic insulating layer 43, and covering the metal on the second inorganic insulating layer 43
  • the organic protective layer 45 of the mesh layer 44 is provided on the encapsulation layer 30, a metal bridge point layer 42 provided on the first inorganic insul
  • the OLED light emitting layer 20 has a pixel spacing region 201 and a light emitting pixel region 202 separated by the pixel spacing region 201.
  • the metal bridge point layer 42 and the metal mesh layer 44 are correspondingly located above the pixel spacing area 201; that is, the touch function layer 40 adopts a metal mesh (Metal Mesh) electrode structure to enable touch control of metal materials
  • the electrode avoids the light emitting pixel region 202 below.
  • the materials of the metal bridge layer 42 and the metal mesh layer 44 are metal materials such as titanium, aluminum, molybdenum, and silver.
  • the first inorganic insulating layer 41 and the second inorganic insulating layer 43 together constitute an inorganic insulating layer 49, and the surface of the inorganic insulating layer 49 in contact with the organic protective layer 45 has a plurality of correspondingly located in the light-emitting pixel area 202
  • the surface of the organic protective layer 45 in contact with the second inorganic insulating layer 43 has a plurality of protrusions 451 respectively corresponding to the embedded grooves 431
  • the organic protective layer 45 is filled
  • a plurality of grooves 431 on the inorganic insulating layer 49 form a plurality of protrusions 451 corresponding to the plurality of grooves 432 respectively.
  • the raised structure on the organic protective layer 45 corresponding to the light emitting pixel area 202 can effectively improve the light coupling output rate of the OLED device.
  • the depth of the groove 431 is less than the thickness of the second inorganic insulating layer 43, and the groove 431 is provided in the second inorganic insulating layer 43.
  • the TFT layer 10 includes a buffer layer, an active layer, a gate insulating layer, a gate electrode layer, an interlayer insulating layer, a source-drain electrode layer, and a planarization layer.
  • the OLED light-emitting layer 20 includes an anode layer 21 provided on the TFT layer 10, a pixel definition layer 22 provided on the TFT layer 10 and the anode layer 21, an organic functional layer 23 provided on the anode layer 21, and a device The cathode layer 24 on the organic functional layer 23 and the pixel definition layer 22.
  • the pixel definition layer 22 encloses a pixel opening corresponding to the light-emitting pixel area 202 above the anode layer 21, and the organic functional layer 23 is formed in the pixel opening by ink material by inkjet printing That is, the pixel definition layer 22 surrounds the organic functional layer 23 above the anode layer 21. That is, the metal bridge layer 42 and the metal mesh layer 44 are correspondingly located above the pixel definition layer 22.
  • the encapsulation layer 30 has a thin-film encapsulation (TFE) layer structure, and includes an inorganic barrier layer 31 and an organic buffer layer 32 that are alternately stacked.
  • TFE thin-film encapsulation
  • the inorganic barrier layer 31 is a stack combination of one or more of a silicon oxide (SiOx) layer, a silicon nitride (SiNx) layer, and a silicon oxynitride (SiON) layer.
  • SiOx silicon oxide
  • SiNx silicon nitride
  • SiON silicon oxynitride
  • the material of the organic protective layer 45 is the same as the material of the organic buffer layer 32; therefore, it can be manufactured by a process similar to the organic buffer layer 32 in the encapsulation layer 30 of the TFE structure, such as inkjet printing (IJP) Process, so that a mask process can be omitted.
  • IJP inkjet printing
  • the material of the organic protective layer 45 includes at least one of acrylic acid, hexamethyldisiloxane, acrylic esters, polycarbonates, and polystyrene.
  • the first inorganic insulating layer 41 and the second inorganic insulating layer 43 are respectively one or more stack combinations of a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer.
  • the metal mesh layer 44 includes a plurality of first electrodes 441 and a plurality of second electrodes 442 interlaced with the plurality of first electrodes 441; each of the first electrodes 441 is insulated at the second inorganic The intersecting position of the second electrode 442 on the layer 43 is disconnected with respect to the second electrode 442.
  • the metal bridge point layer 42 includes a plurality of metal bridges 421 corresponding to the positions where the first electrode 441 and the second electrode 442 cross each other, and are used to connect the adjacent first electrodes 441 on the same straight line.
  • the second inorganic insulating layer 43 is provided with contact holes 432 above the ends corresponding to each of the metal bridges 421; the first electrode 441 is connected to the metal bridge 421 through the contact holes 432, Each first electrode 441 intermittently on the second inorganic insulating layer 43 is connected through the metal bridge 421.
  • the first electrode 341 is one of touch driving electrodes and touch sensing electrodes
  • the second electrode 342 is another one of touch driving electrodes and touch sensing electrodes.
  • the touch function layer 40 adopts a metal mesh (Metal Mesh) electrode structure, and the metal bridge point layer 42 and the metal mesh layer 44 are respectively located in the pixel spacing area 201 Above the organic protective layer 45 corresponding to the raised structure above the light-emitting pixel area 202, which can effectively improve the light coupling output rate of the OLED device, and the entire touch function layer 40 uses an inorganic insulating layer 49 and an organic protective layer 45
  • the superimposed structure is similar to the material and structure of the thin film encapsulation (TFE) film layer. Therefore, the touch function layer 40 also functions as a thin film encapsulation layer, which is beneficial to further block the invasion of water and oxygen and reduce the corrosion of the OLED light emitting device The risk of damage increases the life of the OLED device.
  • FIG. 2 is a schematic structural view of a second embodiment of the OLED touch display screen of the present invention.
  • the difference between this embodiment is that the depth of the groove 431 is greater than that of the second inorganic
  • the thickness of the insulating layer 43, the groove 431 penetrates the second inorganic insulating layer 43 and extends to the first inorganic insulating layer 41, that is, the depth of the groove 431 in this embodiment is set deeper, and The depth of the groove 431 in the first embodiment is set shallow.
  • the other technical features are the same as the first embodiment described above, and will not be repeated here.
  • the present invention also provides a method for manufacturing an OLED touch display, including the following steps:
  • Step S1 As shown in FIG. 4, a base substrate 90 is provided, on which the TFT layer 10, the OLED light emitting layer 20, and the encapsulation layer 30 are formed in this order from bottom to top.
  • the TFT layer 10 includes a buffer layer, an active layer, a gate insulating layer, a gate electrode layer, an interlayer insulating layer, a source-drain electrode layer, and a planarization layer.
  • the OLED light emitting layer 20 has a pixel spacing region 201 and a light emitting pixel region 202 separated by the pixel spacing region 201.
  • the OLED light-emitting layer 20 includes an anode layer 21 provided on the TFT layer 10, a pixel definition layer 22 provided on the TFT layer 10 and the anode layer 21, an organic functional layer 23 provided on the anode layer 21, and a device The cathode layer 24 on the organic functional layer 23 and the pixel definition layer 22.
  • the pixel definition layer 22 encloses a pixel opening corresponding to the light-emitting pixel area 202 above the anode layer 21, and the organic functional layer 23 is formed in the pixel opening by ink material by inkjet printing That is, the pixel definition layer 22 surrounds the organic functional layer 23 above the anode layer 21.
  • the encapsulation layer 30 has a thin-film encapsulation layer structure, and includes an inorganic barrier layer 31 and an organic buffer layer 32 that are alternately stacked.
  • the inorganic barrier layer 31 is a stack combination of one or more of a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer.
  • the organic buffer layer 32 is formed by inkjet printing, and its material includes at least one of acrylic, hexamethyldisiloxane, acrylic, polycarbonate, and polystyrene.
  • Step S2 As shown in FIG. 5, a first inorganic insulating layer 41 is deposited on the encapsulation layer 30.
  • the first inorganic insulating layer 41 is a stack combination of one or more of a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer.
  • Step S3 As shown in FIG. 6, a metal bridge point layer 42 is deposited and patterned on the first inorganic insulating layer 41.
  • the metal bridge point layer 42 is correspondingly located above the pixel spacing region 201, that is, the metal bridge point layer 42 and the metal mesh layer 44 are correspondingly located above the pixel definition layer 22.
  • the material of the metal bridge point layer 42 is metal materials such as titanium, aluminum, molybdenum, and silver.
  • Step S4 As shown in FIG. 7, a second inorganic insulating layer 43 covering the metal bridge point layer 42 is deposited on the first inorganic insulating layer 41, the first inorganic insulating layer 41 and the second inorganic insulating The layers 43 together constitute the inorganic insulating layer 49.
  • the second inorganic insulating layer 43 is a stack combination of one or more of a silicon oxide layer, a silicon nitride layer, and a silicon oxynitride layer.
  • Step S5. As shown in FIG. 8, the inorganic insulating layer 49 is patterned, and a plurality of grooves 431 corresponding to the light emitting pixel region 202 are formed on the surface of the inorganic insulating layer 49, while Corresponding to each of the metal bridges 421, contact holes 432 are formed through the second inorganic insulating layer 43.
  • step S5 the depth of the groove 431 is set according to actual needs, which can be set shallower, the depth of the groove 431 is less than the thickness of the second inorganic insulating layer 43, the The groove 431 is provided in the second inorganic insulating layer 43. or,
  • step S5 the depth of the groove 431 is set deeper, the depth of the groove 431 is greater than the thickness of the second inorganic insulating layer 43, the groove 431 penetrates the second inorganic insulating layer 43 and extends to the first inorganic insulating layer 41.
  • the specific process of patterning and forming the groove 431 and the contact hole 432 in the step S5 includes a photoresist coating step, an exposure step, a development step, an etching step, and a photoresist removal step that are performed in sequence, wherein the pattern
  • the etching step for forming the groove 431 and the contact hole 432 is performed by dry etching.
  • Step S6 As shown in FIG. 9, a metal mesh layer 44 corresponding to the pixel spacing region 201 is deposited and patterned on the second inorganic insulating layer 43.
  • the material of the metal mesh layer 44 is metal materials such as titanium, aluminum, molybdenum, and silver.
  • the metal mesh layer 44 includes a plurality of first electrodes 441 and a plurality of second electrodes 442 interlaced with the plurality of first electrodes 441; each of the first electrodes 441 is insulated at the second inorganic The intersecting position on the layer 43 and the second electrode 442 is disconnected with respect to the second electrode 442.
  • the metal bridge 421 is correspondingly located below the intersection of the first electrode 441 and the second electrode 442, and is used to connect the adjacent first electrodes 441 on the same straight line.
  • the first electrode 441 is connected to the metal bridge 421 through the contact hole 432, and each of the first electrodes 441 intermittently on the second inorganic insulating layer 43 passes through the metal bridge 421 Connected.
  • the first electrode 341 is one of touch driving electrodes and touch sensing electrodes
  • the second electrode 342 is another one of touch driving electrodes and touch sensing electrodes.
  • the metal mesh layer 44 corresponds to being located above the pixel spacing region 201; that is, the metal mesh layer 44 is corresponding to being above the pixel defining layer 22, and the touch function layer 40 uses a metal mesh Metal mesh electrode structure, so that the metal touch electrode avoids the light emitting pixel region 202 below.
  • Step S7 an organic protective layer 45 covering the metal mesh layer 44 is formed on the two inorganic insulating layers 43, the organic protective layer 45 fills the plurality of grooves 431 on the inorganic insulating layer 49, so that The organic protective layer 45 forms a plurality of protrusions 451 respectively corresponding to the plurality of recesses 431 on the surface in contact with the second inorganic insulating layer 43 to obtain a first inorganic insulating layer 41 and a metal bridge point layer 42.
  • the touch function layer 40 of the second inorganic insulating layer 43, the metal mesh layer 44 and the organic protective layer 45, the organic protective layer 45 corresponding to the raised structure above the light emitting pixel region 202 can effectively improve the OLED device Optical coupling output rate, so as to obtain the OLED touch screen shown in FIG. 1 or FIG. 2.
  • the material of the organic protective layer 45 is the same as the material of the organic buffer layer 32 in the encapsulation layer 30; therefore, it can be made by a process similar to the organic buffer layer 32 in the encapsulation layer 30 of the TFE structure, such as spraying Ink printing process, so that a mask process can be omitted.
  • the material of the organic protective layer 45 includes at least one of acrylic acid, hexamethyldisiloxane, acrylic esters, polycarbonates, and polystyrene.
  • the touch function layer 40 adopts a metal grid electrode structure, and the metal bridge point layer 42 and the metal grid layer 44 in the touch function layer 40 are located corresponding to the pixels Above the spacer region 201, the organic protective layer 45 in the touch function layer 40 has a raised structure corresponding to the light emitting pixel region 202, which can effectively improve the light coupling output rate of the OLED device, and the touch function layer 40 adopts a structure in which an inorganic insulating layer 49 and an organic protective layer 45 are superimposed, similar to the material and structure of a thin film encapsulation (TFE) film layer, so the touch function layer 40 also functions as a thin film encapsulation layer, which is beneficial to further Block the invasion of water and oxygen, reduce the risk of corrosion damage of OLED light-emitting devices, and improve the life of OLED devices.
  • TFE thin film encapsulation
  • the OLED touch display screen of the present invention includes a substrate substrate and a TFT layer, an OLED light emitting layer, an encapsulation layer, and a touch function layer disposed on the substrate substrate in sequence;
  • the touch function layer It includes a first inorganic insulating layer, a metal bridge point layer, a second inorganic insulating layer, a metal grid layer and an organic protective layer that are arranged in sequence; the first inorganic insulating layer and the second inorganic insulating layer together form an inorganic insulating layer
  • the surface of the inorganic insulating layer in contact with the organic protective layer has a plurality of grooves respectively corresponding to above the light-emitting pixel area, and the surface of the organic protective layer in contact with the second inorganic insulating layer has a plurality of corresponding respectively Protrusions embedded in the plurality of grooves;
  • the touch function layer uses a metal grid (Metal Mesh) electrode structure, the metal bridge point layer and the metal mesh layer are correspondingly

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Abstract

提供一种OLED触控显示屏及其制作方法。所述OLED触控显示屏的触控功能层（40）的有机保护层（45）具有对应于发光像素区域（202）上方的凸起结构，可有效提高OLED器件的光耦合输出率，且所述触控功能层（40）整体采用无机绝缘层（49）与有机保护层（45）叠加的结构，与薄膜封装层（30）的材质和结构类似，因此该触控功能层同时还起到了薄膜封装层（30）的作用，有利于进一步阻隔水氧的入侵，降低OLED发光器件被腐蚀破坏的风险，提高了OLED器件的寿命。

Description

OLED触控显示屏及其制作方法 技术领域
本发明涉及触控显示技术领域，尤其涉及一种OLED触控显示屏及其制作方法。
 背景技术
在平板显示技术中，有机发光二极管（Organic Light-Emitting Diode，OLED）显示器具有轻薄、主动发光、响应速度快、可视角大、色域宽、亮度高和功耗低等众多优点，逐渐成为继液晶显示器后的第三代显示技术。相对于液晶显示器(Liquid crystal displays，LCD)，OLED具有更省电、更薄、且视角宽的优势，这是LCD无法比拟的。目前，人们对显示的细腻程度即分辨率要求越来越高，但生产高质量、高分辨率的OLED显示屏仍然面临着许多挑战。
尽管OLED显示器具有众多优点，但是它也有自身的不足，光子利用率低就是其中一个不足。由于受铟锡氧化物(ITO)与玻璃基底、OLED器件内部各种功能层的反射和折射等因素的影响，大约有70%的光子不能逸出至空气中，导致光子利用率低。为了提高器件的取光效率，研究者提出了许多方法，比如通过改变器件电极的结构，在OLED内部插入光提取层，或者在基底表面刻蚀各种微结构等。这些方法都可以在一定程度上提高OLED的取光效率，但过程复杂，在实际应用中难以实现，且改变内部结构或刻蚀容易影响OLED的本身性能，因此如何提高OLED器件的光提取和光耦合输出成为OLED结构设计的重要课题。
随着便携式电子显示设备的发展，触摸屏(Touch panel)提供了一种新的人机互 动界面，其在使用上更直接、更人性化。将触摸屏与平面显示装置整合在一起，形成触控显示装置，能够使平面显示装置具有触控功能，可通过手指、触控笔等执行输入，操作更加直观、简便。
目前比较常用的触控技术包括外挂式触控技术和内嵌式触控技术。以液晶面板为例，外挂式触控技术是将触摸屏嵌入到显示屏的彩色滤光片基板和偏光片之间的方法，即在液晶面板上配触摸传感器，相比内嵌式触控技术难度降低不少。 在现有的外挂式OLED触控显示屏的技术开发中，一般将触控感应器制作在OLED层之上，具体过程为：首先制作包含基板在内的TFT层，然后在TFT层上制作OLED层，在OLED层上制作封装层，最后在封装层上制作触控功能层。其中，触控功能层通常包括由下至上依次设置的第一绝缘层、桥点层、第二绝缘层、电极线路层及有机保护层，其中，桥点层在像素区内包括多个金属桥，所述电极线路层包括触控驱动电极（Tx）及触控感应电极（Rx），所述触控驱动电极或触控感应电极通过贯穿第二绝缘层的接触孔与所述金属桥连接。
目前触摸面板的导电层主要是以氧化铟锡化合物通过真空镀膜、图形化蚀刻的工艺形成于绝缘基材上，其不仅对工艺、设备要求较高，还在蚀刻中浪费大量的氧化铟锡化合物材料，以及产生大量的含重金属的工业废液;同时，氧化铟锡化合物中的金属铟 (In) 是一种稀有资源，造成触控面板的成本较高。为了有效降低触控面板的成本，同时满足终端消费性电子产品轻薄化市场趋势，近年来发展了一种金属网格触摸屏技术 (Metal Mesh TP)，其感应层的导电层用金属网格替代氧化铟锡化合物做成触控电极，相比于氧化铟锡(ITO)作为触控面板的触控电极材料而言，金属网格的电学性能良好，方阻低，可应用于大尺寸触控显示产品中。
 技术问题
本发明的目的在于提供一种OLED触控显示屏，可提高光耦合输出率，进一步阻隔水氧的入侵，降低OLED发光器件被腐蚀破坏的风险，提高OLED器件的寿命。
本发明的目的还在于提供一种OLED触控显示屏的制作方法，可提高光耦合输出率，进一步阻隔水氧的入侵，降低OLED发光器件被腐蚀破坏的风险，提高OLED器件的寿命。
 技术解决方案
为实现上述目的，本发明提供一种OLED触控显示屏，包括衬底基板及在所述衬底基板上依次设置的TFT层、OLED发光层、封装层及触控功能层；
所述触控功能层包括设于所述封装层上的第一无机绝缘层、设于所述第一无机绝缘层上的金属桥点层、在所述第一无机绝缘层上覆盖所述金属桥点层的第二无机绝缘层、设于所述第二无机绝缘层上的金属网格层及在所述第二无机绝缘层上覆盖所述金属网格层的有机保护层；
所述OLED发光层具有像素间隔区域及由所述像素间隔区域间隔开的发光像素区域；
所述金属桥点层和金属网格层对应位于所述像素间隔区域的上方；
所述第一无机绝缘层和第二无机绝缘层共同组成无机绝缘层，所述无机绝缘层与所述有机保护层接触的表面具有多个分别对应位于所述发光像素区域上方的凹槽，所述有机保护层填充所述第二无机绝缘层上的多个凹槽，所述有机保护层与所述第二无机绝缘层接触的表面具有多个分别对应嵌入所述多个凹槽内的凸起。
可选地，所述凹槽的深度小于所述第二无机绝缘层的厚度，所述凹槽设于所述第二无机绝缘层。
可选地，所述凹槽的深度大于所述第二无机绝缘层的厚度，所述凹槽贯穿所述第二无机绝缘层并延伸至所述第一无机绝缘层。
所述封装层包括交替层叠设置的无机阻挡层和有机缓冲层；
所述有机保护层的材料与所述有机缓冲层的材料相同；
所述有机保护层的材料包括丙烯酸、六甲基二硅氧烷、丙烯酸酯类、聚碳酸酯类及聚苯乙烯中的至少一种。
所述金属网格层包括多条第一电极及与所述多条第一电极交错设置的多条第二电极，每条所述第一电极在第二无机绝缘层上与所述第二电极的交错位置处相对于该第二电极间断开；
所述金属桥点层包括多个对应位于所述第一电极与第二电极交错位置处下方的金属桥；
所述第二无机绝缘层在对应每一所述金属桥两端上方设有接触孔；
所述第一电极通过所述接触孔与所述金属桥相连接，每条在所述第二无机绝缘层上间断的第一电极通过所述金属桥连接起来。
本发明还提供一种OLED触控显示屏的制作方法，包括如下步骤：
步骤S1、提供一衬底基板，在所述衬底基板上依次形成TFT层、OLED发光层及封装层；
所述OLED发光层具有像素间隔区域及由所述像素间隔区域间隔开的发光像素区域；
步骤S2、在所述封装层上沉积形成第一无机绝缘层；
步骤S3、在所述第一无机绝缘层上沉积并图案化形成金属桥点层；
步骤S4、在所述第一无机绝缘层上沉积形成覆盖所述金属桥点层的第二无机绝缘层，所述第一无机绝缘层和第二无机绝缘层共同组成无机绝缘层；
步骤S5、对所述无机绝缘层进行图案化处理，在所述无机绝缘层的表面形成多个分别对应位于所述发光像素区域上方的凹槽；
步骤S6、在所述第二无机绝缘层上沉积并图案化形成对应位于所述像素间隔区域上方的金属网格层；
步骤S7、在所述二无机绝缘层上形成覆盖所述金属网格层的有机保护层，所述有机保护层填充所述无机绝缘层上的多个凹槽，从而所述有机保护层在与所述第二无机绝缘层接触的表面形成多个分别对应嵌入所述多个凹槽内的凸起。
可选地，所述步骤S5中，所述凹槽的深度小于所述第二无机绝缘层的厚度，所述凹槽设于所述第二无机绝缘层。
可选地，所述步骤S5中，所述凹槽的深度大于所述第二无机绝缘层的厚度，所述凹槽贯穿所述第二无机绝缘层并延伸至所述第一无机绝缘层。
所述步骤S1中，所述封装层包括交替层叠设置的无机阻挡层和有机缓冲层；
所述步骤S7中，所述有机保护层的材料与所述有机缓冲层的材料相同；
所述有机保护层的材料包括丙烯酸、六甲基二硅氧烷、丙烯酸酯类、聚碳酸酯类及聚苯乙烯中的至少一种。
所述步骤S3中，所述金属桥点层包括多个金属桥；
所述步骤S5还包括在对应每一所述金属桥两端上方形成贯穿所述第二无机绝缘层的接触孔；
所述步骤S6中，所述金属网格层包括多条第一电极及与所述多条第一电极交错设置的多条第二电极，每条所述第一电极在第二无机绝缘层上与所述第二电极的交错位置处相对于该第二电极间断开；
所述金属桥对应位于所述第一电极与第二电极交错位置处的下方；
所述第一电极通过所述接触孔与所述金属桥相连接，每条在所述第二无机绝缘层上间断的第一电极通过所述金属桥连接起来。
 有益效果
本发明的有益效果：本发明的OLED触控显示屏，包括衬底基板及在所述衬底基板上依次设置的TFT层、OLED发光层、封装层及触控功能层；所述触控功能层包括依次设置的第一无机绝缘层、金属桥点层、第二无机绝缘层、金属网格层及有机保护层；所述第一无机绝缘层和第二无机绝缘层共同组成无机绝缘层，所述无机绝缘层与所述有机保护层接触的表面具有多个分别对应位于所述发光像素区域上方的凹槽，所述有机保护层与所述第二无机绝缘层接触的表面具有多个分别对应嵌入所述多个凹槽内的凸起；所述触控功能层采用金属网格（Metal Mesh）的电极结构，所述金属桥点层和金属网格层对应位于所述像素间隔区域的上方，有机保护层具有对应于发光像素区域上方的凸起结构，可有效提高OLED器件的光耦合输出率，且所述触控功能层整体采用无机绝缘层与有机保护层叠加的结构，与薄膜封装（TFE）膜层的材质和结构类似，因此该触控功能层同时还起到了薄膜封装层的作用，有利于进一步阻隔水氧的入侵，降低OLED发光器件被腐蚀破坏的风险，提高了OLED器件的寿命。本发明的OLED触控显示屏的制作方法，可提高光耦合输出率，进一步阻隔水氧的入侵，降低OLED发光器件被腐蚀破坏的风险，提高OLED器件的寿命。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
 附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明OLED触控显示屏第一实施例的结构示意图；
图2为本发明OLED触控显示屏第二实施例的结构示意图；
图3为本发明OLED触控显示屏的制作方法的流程示意图；
图4为本发明OLED触控显示屏的制作方法的步骤S1的示意图；
图5为本发明OLED触控显示屏的制作方法的步骤S2的示意图；
图6为本发明OLED触控显示屏的制作方法的步骤S3的示意图；
图7为本发明OLED触控显示屏的制作方法的步骤S4的示意图；
图8为本发明OLED触控显示屏的制作方法的步骤S5的示意图；
图9为本发明OLED触控显示屏的制作方法的步骤S6的示意图。
 本发明的实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，为本发明OLED触控显示屏第一实施例的结构示意图，本实施例包括衬底基板90及在所述衬底基板90上由下至上依次设置的TFT层10、OLED发光层20、封装层30及触控功能层40。
所述触控功能层40包括设于所述封装层30上的第一无机绝缘层41、设于所述第一无机绝缘层41上的金属桥点层42、在所述第一无机绝缘层41上覆盖所述金属桥点层42的第二无机绝缘层43、设于所述第二无机绝缘层43上的金属网格层44及在所述第二无机绝缘层43上覆盖所述金属网格层44的有机保护层45。
所述OLED发光层20具有像素间隔区域201及由所述像素间隔区域201间隔开的发光像素区域202。
所述金属桥点层42和金属网格层44对应位于所述像素间隔区域201的上方；即所述触控功能层40采用金属网格（Metal Mesh）的电极结构，使金属材质的触控电极避开了下方的发光像素区域202。
具体地，所述金属桥点层42和金属网格层44的材料为钛、铝、钼、银等金属材料。
所述第一无机绝缘层41和第二无机绝缘层43共同组成无机绝缘层49，所述无机绝缘层49与所述有机保护层45接触的表面具有多个分别对应位于所述发光像素区域202上方的凹槽431，所述有机保护层45与所述第二无机绝缘层43接触的表面具有多个分别对应嵌入所述多个凹槽431内的凸起451，所述有机保护层45填充所述无机绝缘层49上的多个凹槽431，形成多个与所述多个凹槽432分别对应匹配的凸起451。该有机保护层45上对应于发光像素区域202上方的凸起结构，可有效提高OLED器件的光耦合输出率。
具体地，所述凹槽431的深度小于所述第二无机绝缘层43的厚度，所述凹槽431设于所述第二无机绝缘层43。
具体地，所述TFT层10包括缓冲层、有源层、栅绝缘层、栅电极层、层间绝缘层、源漏极电极层以及平坦化层。
具体地，所述OLED发光层20包括设于TFT层10上的阳极层21、设于TFT层10及阳极层21上的像素定义层22、设于阳极层21上的有机功能层23以及设于有机功能层23和像素定义层22上的阴极层24。
具体地，所述像素定义层22在所述阳极层21上方围出对应于发光像素区域202的像素开口，所述有机功能层23由油墨材料通过喷墨打印的方式形成于所述像素开口内，即所述像素定义层22将有机功能层23围拢在所述阳极层21的上方。即所述金属桥点层42和金属网格层44对应位于所述像素定义层22的上方。
具体地，所述封装层30为薄膜封装（TFE）层结构，包括交替层叠设置的无机阻挡层31和有机缓冲层32。
具体地，所述无机阻挡层31为氧化硅（SiOx）层、氮化硅（SiNx）层及氮氧化硅（SiON）层中的一种或多种的堆栈组合。
进一步地，所述有机保护层45的材料与所述有机缓冲层32的材料相同；因此可采取与TFE结构的封装层30中有机缓冲层32相类似的工艺制作，例如喷墨打印(IJP)工艺，从而可省略一道光罩（Mask）制程。
具体地，所述有机保护层45的材料包括丙烯酸、六甲基二硅氧烷、丙烯酸酯类、聚碳酸酯类及聚苯乙烯中的至少一种。
具体地，所述第一无机绝缘层41、第二无机绝缘层43分别为氧化硅层、氮化硅层及氮氧化硅层中的一种或多种的堆栈组合。
具体地，所述金属网格层44包括多条第一电极441及与所述多条第一电极441交错设置的多条第二电极442；每条所述第一电极441在第二无机绝缘层43上与所述第二电极442的交错位置处相对于该第二电极442间断开。
所述金属桥点层42包括多个对应于第一电极441与第二电极442交错位置处下方的金属桥421，用于连接同条直线上相邻的第一电极441。
具体地，所述第二无机绝缘层43在对应每一所述金属桥421两端上方设有接触孔432；所述第一电极441通过所述接触孔432与所述金属桥421相连接，每条在所述第二无机绝缘层43上间断的所述第一电极441通过所述金属桥421相连接。
其中，所述第一电极341为触控驱动电极和触控感应电极中的一种，所述第二电极342为触控驱动电极和触控感应电极中的另一种。
本实施例的OLED触控显示屏，所述触控功能层40采用金属网格（Metal Mesh）的电极结构，所述金属桥点层42和金属网格层44对应位于所述像素间隔区域201的上方，有机保护层45上对应于发光像素区域202上方的凸起结构，可有效提高OLED器件的光耦合输出率，且所述触控功能层40整体采用无机绝缘层49与有机保护层45叠加的结构，与薄膜封装（TFE）膜层的材质和结构类似，因此该触控功能层40同时还起到了薄膜封装层的作用，有利于进一步阻隔水氧的入侵，降低OLED发光器件被腐蚀破坏的风险，提高了OLED器件的寿命。
请参阅图2，为本发明OLED触控显示屏第二实施例的结构示意图，本实施例与上述第一实施例相比，其区别在于，所述凹槽431的深度大于所述第二无机绝缘层43的厚度，所述凹槽431贯穿所述第二无机绝缘层43并延伸至所述第一无机绝缘层41，即本实施例中所述凹槽431的深度设置的较深，而第一实施例中所述凹槽431的深度设置的较浅。其他技术特征均与上述第一实施例相同，在此不再赘述。
请参阅图3，基于上述的OLED触控显示屏，本发明还提供一种OLED触控显示屏的制作方法，包括如下步骤：
步骤S1、如图4所示，提供一衬底基板90，在所述衬底基板90上由下至上依次形成TFT层10、OLED发光层20及封装层30。
具体地，所述步骤S1中，所述TFT层10包括缓冲层、有源层、栅绝缘层、栅电极层、层间绝缘层、源漏极电极层以及平坦化层。
具体地，所述OLED发光层20具有像素间隔区域201及由所述像素间隔区域201间隔开的发光像素区域202。
具体地，所述OLED发光层20包括设于TFT层10上的阳极层21、设于TFT层10及阳极层21上的像素定义层22、设于阳极层21上的有机功能层23以及设于有机功能层23和像素定义层22上的阴极层24。
具体地，所述像素定义层22在所述阳极层21上方围出对应于发光像素区域202的像素开口，所述有机功能层23由油墨材料通过喷墨打印的方式形成于所述像素开口内，即所述像素定义层22将有机功能层23围拢在所述阳极层21的上方。
具体地，所述封装层30为薄膜封装层结构，包括交替层叠设置的无机阻挡层31和有机缓冲层32。
具体地，所述无机阻挡层31为氧化硅层、氮化硅层及氮氧化硅层中的一种或多种的堆栈组合。
具体地，有机缓冲层32采用喷墨打印的方式形成，其材料包括丙烯酸、六甲基二硅氧烷、丙烯酸酯类、聚碳酸酯类及聚苯乙烯中的至少一种。
步骤S2、如图5所示，在所述封装层30上沉积形成第一无机绝缘层41。
具体地，所述第一无机绝缘层41为氧化硅层、氮化硅层及氮氧化硅层中的一种或多种的堆栈组合。
步骤S3、如图6所示，在所述第一无机绝缘层41上沉积并图案化形成金属桥点层42。
具体地，所述金属桥点层42对应位于所述像素间隔区域201的上方，即所述金属桥点层42和金属网格层44对应位于所述像素定义层22的上方。
具体地，所述金属桥点层42的材料为钛、铝、钼、银等金属材料。
步骤S4、如图7所示，在所述第一无机绝缘层41上沉积形成覆盖所述金属桥点层42的第二无机绝缘层43，所述第一无机绝缘层41和第二无机绝缘层43共同组成无机绝缘层49。
具体地，所述第二无机绝缘层43为氧化硅层、氮化硅层及氮氧化硅层中的一种或多种的堆栈组合。
步骤S5、如图8所示，对所述无机绝缘层49进行图案化处理，在所述无机绝缘层49的表面形成多个分别对应位于所述发光像素区域202上方的凹槽431，同时在对应每一所述金属桥421两端上方形成贯穿所述第二无机绝缘层43的接触孔432。
具体地，所述步骤S5中，所述凹槽431的深度根据实际需要进行设置，其可以设置的较浅，所述凹槽431的深度小于所述第二无机绝缘层43的厚度，所述凹槽431设于所述第二无机绝缘层43。或者，
所述步骤S5中，所述凹槽431的深度设置的较深，所述凹槽431的深度大于所述第二无机绝缘层43的厚度，所述凹槽431贯穿所述第二无机绝缘层43并延伸至所述第一无机绝缘层41。
具体地，所述步骤S5中图案化形成所述凹槽431和接触孔432的具体过程包括依次进行的光阻涂布步骤、曝光步骤、显影步骤、蚀刻步骤、去光阻步骤，其中，图案化形成凹槽431和接触孔432的蚀刻步骤采用干法蚀刻进行。
步骤S6、如图9所示，在所述第二无机绝缘层43上沉积并图案化形成对应位于所述像素间隔区域201上方的金属网格层44。
具体地，所述金属网格层44的材料为钛、铝、钼、银等金属材料。
具体地，所述金属网格层44包括多条第一电极441及与所述多条第一电极441交错设置的多条第二电极442；每条所述第一电极441在第二无机绝缘层43上与所述第二电极442的交错位置处相对于该第二电极442间断开。
所述金属桥421对应位于第一电极441与第二电极442交错位置处的下方，用于连接同条直线上相邻的第一电极441。
具体地，所述第一电极441通过所述接触孔432与所述金属桥421相连接，每条在所述第二无机绝缘层43上间断的所述第一电极441通过所述金属桥421相连接。
其中，所述第一电极341为触控驱动电极和触控感应电极中的一种，所述第二电极342为触控驱动电极和触控感应电极中的另一种。
具体地，所述金属网格层44对应位于所述像素间隔区域201的上方；即所述金属网格层44对应位于所述像素定义层22的上方，所述触控功能层40采用金属网格（Metal Mesh）的电极结构，从而使金属材质的触控电极避开了下方的发光像素区域202。
步骤S7、在所述二无机绝缘层43上形成覆盖所述金属网格层44的有机保护层45，所述有机保护层45填充所述无机绝缘层49上的多个凹槽431，从而所述有机保护层45在与所述第二无机绝缘层43接触的表面形成多个分别对应嵌入所述多个凹槽431内的凸起451，得到包括第一无机绝缘层41、金属桥点层42、第二无机绝缘层43、金属网格层44及有机保护层45的触控功能层40，该有机保护层45上对应于发光像素区域202上方的凸起结构，可有效提高OLED器件的光耦合输出率，从而得到如图1或图2所示的OLED触控显示屏。
进一步地，所述有机保护层45的材料与所述封装层30中的有机缓冲层32的材料相同；因此可采取与TFE结构的封装层30中有机缓冲层32相类似的工艺制作，例如喷墨打印工艺，从而可省略一道光罩（Mask）制程。
具体地，所述有机保护层45的材料包括丙烯酸、六甲基二硅氧烷、丙烯酸酯类、聚碳酸酯类及聚苯乙烯中的至少一种。
本发明的OLED触控显示屏的制作方法，触控功能层40采用金属网格的电极结构，所述触控功能层40中的金属桥点层42和金属网格层44对应位于所述像素间隔区域201的上方，所述触控功能层40中的有机保护层45上对应于发光像素区域202上方具有凸起结构，可有效提高OLED器件的光耦合输出率，且所述触控功能层40整体采用无机绝缘层49与有机保护层45叠加的结构，与薄膜封装（TFE）膜层的材质和结构类似，因此该触控功能层40同时还起到了薄膜封装层的作用，有利于进一步阻隔水氧的入侵，降低OLED发光器件被腐蚀破坏的风险，提高了OLED器件的寿命。
综上所述，本发明的OLED触控显示屏，包括衬底基板及在所述衬底基板上依次设置的TFT层、OLED发光层、封装层及触控功能层；所述触控功能层包括依次设置的第一无机绝缘层、金属桥点层、第二无机绝缘层、金属网格层及有机保护层；所述第一无机绝缘层和第二无机绝缘层共同组成无机绝缘层，所述无机绝缘层与所述有机保护层接触的表面具有多个分别对应位于所述发光像素区域上方的凹槽，所述有机保护层与所述第二无机绝缘层接触的表面具有多个分别对应嵌入所述多个凹槽内的凸起；所述触控功能层采用金属网格（Metal Mesh）的电极结构，所述金属桥点层和金属网格层对应位于所述像素间隔区域的上方，有机保护层上对应于发光像素区域上方具有凸起结构，可有效提高OLED器件的光耦合输出率，且所述触控功能层整体采用无机绝缘层与有机保护层叠加的结构，与薄膜封装（TFE）膜层的材质和结构类似，因此该触控功能层同时还起到了薄膜封装层的作用，有利于进一步阻隔水氧的入侵，降低OLED发光器件被腐蚀破坏的风险，提高了OLED器件的寿命。本发明的OLED触控显示屏的制作方法，可提高光耦合输出率，进一步阻隔水氧的入侵，降低OLED发光器件被腐蚀破坏的风险，提高OLED器件的寿命。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

  1. 一种OLED触控显示屏，包括衬底基板及在所述衬底基板上依次设置的TFT层、OLED发光层、封装层及触控功能层；
    所述触控功能层包括设于所述封装层上的第一无机绝缘层、设于所述第一无机绝缘层上的金属桥点层、在所述第一无机绝缘层上覆盖所述金属桥点层的第二无机绝缘层、设于所述第二无机绝缘层上的金属网格层及在所述第二无机绝缘层上覆盖所述金属网格层的有机保护层；
    所述OLED发光层具有像素间隔区域及由所述像素间隔区域间隔开的发光像素区域；
    所述金属桥点层和金属网格层对应位于所述像素间隔区域的上方；
    所述第一无机绝缘层和第二无机绝缘层共同组成无机绝缘层，所述无机绝缘层与所述有机保护层接触的表面具有多个分别对应位于所述发光像素区域上方的凹槽，所述有机保护层填充所述第二无机绝缘层上的多个凹槽，所述有机保护层与所述第二无机绝缘层接触的表面具有多个分别对应嵌入所述多个凹槽内的凸起。
  2. 如权利要求1所述的OLED触控显示屏，其中，所述凹槽的深度小于所述第二无机绝缘层的厚度，所述凹槽设于所述第二无机绝缘层。
  3. 如权利要求1所述的OLED触控显示屏，其中，所述凹槽的深度大于所述第二无机绝缘层的厚度，所述凹槽贯穿所述第二无机绝缘层并延伸至所述第一无机绝缘层。
  4. 如权利要求1所述的OLED触控显示屏，其中，所述封装层包括交替层叠设置的无机阻挡层和有机缓冲层；
    所述有机保护层的材料与所述有机缓冲层的材料相同；
    所述有机保护层的材料包括丙烯酸、六甲基二硅氧烷、丙烯酸酯类、聚碳酸酯类及聚苯乙烯中的至少一种。
  5. 如权利要求1所述的OLED触控显示屏，其中，所述金属网格层包括多条第一电极及与所述多条第一电极交错设置的多条第二电极，每条所述第一电极在第二无机绝缘层上与所述第二电极的交错位置处相对于该第二电极间断开；
    所述金属桥点层包括多个对应位于所述第一电极与第二电极交错位置处下方的金属桥；
    所述第二无机绝缘层在对应每一所述金属桥两端上方设有接触孔；
    所述第一电极通过所述接触孔与所述金属桥相连接，每条在所述第二无机绝缘层上间断的第一电极通过所述金属桥连接起来。
  6. 一种OLED触控显示屏的制作方法，包括如下步骤：
    步骤S1、提供一衬底基板，在所述衬底基板上依次形成TFT层、OLED发光层及封装层；
    所述OLED发光层具有像素间隔区域及由所述像素间隔区域间隔开的发光像素区域；
    步骤S2、在所述封装层上沉积形成第一无机绝缘层；
    步骤S3、在所述第一无机绝缘层上沉积并图案化形成金属桥点层；
    步骤S4、在所述第一无机绝缘层上沉积形成覆盖所述金属桥点层的第二无机绝缘层，所述第一无机绝缘层和第二无机绝缘层共同组成无机绝缘层；
    步骤S5、对所述无机绝缘层进行图案化处理，在所述无机绝缘层的表面形成多个分别对应位于所述发光像素区域上方的凹槽；
    步骤S6、在所述第二无机绝缘层上沉积并图案化形成对应位于所述像素间隔区域上方的金属网格层；
    步骤S7、在所述二无机绝缘层上形成覆盖所述金属网格层的有机保护层，所述有机保护层填充所述无机绝缘层上的多个凹槽，从而所述有机保护层在与所述第二无机绝缘层接触的表面形成多个分别对应嵌入所述多个凹槽内的凸起。
  7. 如权利要求6所述的OLED触控显示屏的制作方法，其中，所述步骤S5中，所述凹槽的深度小于所述第二无机绝缘层的厚度，所述凹槽设于所述第二无机绝缘层。
  8. 如权利要求6所述的OLED触控显示屏的制作方法，其中，所述步骤S5中，所述凹槽的深度大于所述第二无机绝缘层的厚度，所述凹槽贯穿所述第二无机绝缘层并延伸至所述第一无机绝缘层。
  9. 如权利要求6所述的OLED触控显示屏的制作方法，其中，所述步骤S1中，所述封装层包括交替层叠设置的无机阻挡层和有机缓冲层；
    所述步骤S7中，所述有机保护层的材料与所述有机缓冲层的材料相同；
    所述有机保护层的材料包括丙烯酸、六甲基二硅氧烷、丙烯酸酯类、聚碳酸酯类及聚苯乙烯中的至少一种。
  10. 如权利要求6所述的OLED触控显示屏的制作方法，其中，所述步骤S3中，所述金属桥点层包括多个金属桥；
    所述步骤S5还包括在对应每一所述金属桥两端上方形成贯穿所述第二无机绝缘层的接触孔；
    所述步骤S6中，所述金属网格层包括多条第一电极及与所述多条第一电极交错设置的多条第二电极，每条所述第一电极在第二无机绝缘层上与所述第二电极的交错位置处相对于该第二电极间断开；
    所述金属桥对应位于所述第一电极与第二电极交错位置处的下方；
    所述第一电极通过所述接触孔与所述金属桥相连接，每条在所述第二无机绝缘层上间断的第一电极通过所述金属桥连接起来。
PCT/CN2018/121000 2018-12-07 2018-12-14 Oled 触控显示屏及其制作方法 Ceased WO2020113650A1 (zh)

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