WO2020105482A1 - 半導体パッケージの製造方法及びそれに用いられる粘着シート - Google Patents
半導体パッケージの製造方法及びそれに用いられる粘着シートInfo
- Publication number
- WO2020105482A1 WO2020105482A1 PCT/JP2019/044081 JP2019044081W WO2020105482A1 WO 2020105482 A1 WO2020105482 A1 WO 2020105482A1 JP 2019044081 W JP2019044081 W JP 2019044081W WO 2020105482 A1 WO2020105482 A1 WO 2020105482A1
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- Prior art keywords
- adhesive layer
- layer
- embankment
- sheet
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4652—Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
- H05K3/4655—Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern by using a laminate characterized by the insulating layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4661—Adding a circuit layer by direct wet plating, e.g. electroless plating; insulating materials adapted therefor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4682—Manufacture of core-less build-up multilayer circuits on a temporary carrier or on a metal foil
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7424—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07202—Connecting or disconnecting of bump connectors using auxiliary members
- H10W72/07204—Connecting or disconnecting of bump connectors using auxiliary members using temporary auxiliary members, e.g. sacrificial coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07231—Techniques
- H10W72/07236—Soldering or alloying
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07302—Connecting or disconnecting of die-attach connectors using an auxiliary member
- H10W72/07304—Connecting or disconnecting of die-attach connectors using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07331—Connecting techniques
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/074—Connecting or disconnecting of anisotropic conductive adhesives
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/019—Manufacture or treatment using temporary auxiliary substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
Definitions
- the present invention relates to a method for manufacturing a semiconductor package and an adhesive sheet used for the method.
- the coreless build-up method removes the core (core material) after alternately stacking (build-up) insulating layers and wiring layers on a so-called core (core material) by a method called a build-up method to form a multilayer. Then, the wiring board is formed only by the build-up layer.
- a method for manufacturing a multilayer printed wiring board using the coreless build-up method removes the core (core material) after alternately stacking (build-up) insulating layers and wiring layers on a so-called core (core material) by a method called a build-up method to form a multilayer. Then, the wiring board is formed only by the build-up layer.
- the coreless build-up method it has been proposed to use a copper foil with a carrier so that the support and the multilayer printed wiring board can be easily separated from each other.
- Patent Document 1 JP 2005-101137 A
- an insulating resin layer is attached to a carrier surface of a copper foil with a carrier to form a support, and a photoresist processing is performed on the ultrathin copper layer side of the copper foil with a carrier.
- a process such as pattern electrolytic copper plating and resist removal
- Patent Document 2 Japanese Unexamined Patent Publication No. 2015-35551
- a metal peeling layer is formed on the main surface of a support made of glass or a silicon wafer, an insulating resin layer is formed thereon, and an insulating resin layer is formed thereon.
- a method of manufacturing a semiconductor device which includes forming solder bumps on the surface of a secondary mounting pad and secondary mounting.
- Patent Document 4 International Publication No. 2018/097266 discloses a pressure-sensitive adhesive sheet including a soluble pressure-sensitive adhesive layer configured in an intermittent pattern such as an island shape or a stripe shape.
- Patent Document 4 after the pressure-sensitive adhesive sheet is attached to an adherend such as a printed wiring board to reinforce the pressure-sensitive adhesive sheet, and when the pressure-sensitive adhesive sheet is peeled off, a peeling liquid is effectively applied to the gaps in the pattern of the soluble pressure-sensitive adhesive layer. It is also disclosed that it can be permeated to facilitate dissolution or softening of the soluble adhesive layer.
- a soluble adhesive layer composed of an intermittent pattern as disclosed in Patent Document 4 as an adhesive layer for attaching the reinforcing sheet to the rewiring layer enables rapid separation of the reinforcing sheet. It is preferable in terms. However, in the case of such a configuration, the chemical solution used in the step before the step of peeling the reinforcing sheet is brought into the next step by permeating between the patterns of the soluble adhesive layer, and the chemical solution used in the next step is Problems such as contamination can occur. Further, the soluble adhesive layer may be dissolved or softened by the chemical liquid used in the step before the step of peeling the reinforcing sheet, and the reinforcing sheet may be peeled unintentionally during the manufacturing process.
- the present inventors now have a soluble adhesive layer provided in an intermittent pattern and a soluble adhesive layer when a second supporting substrate as a reinforcing sheet is attached to a laminate having a rewiring layer on a first supporting substrate.
- an adhesive sheet that has a linear embankment adhesive layer that surrounds the periphery of the structure it is possible to effectively prevent contamination of chemicals used in the pretreatment process and unintended peeling of the reinforcing sheet during the semiconductor package manufacturing process. I got the knowledge that I can.
- an object of the present invention is to provide a semiconductor package manufacturing method capable of effectively suppressing contamination of a chemical solution used in a pretreatment process or the like and unintentional peeling of a reinforcing sheet.
- a method of manufacturing a semiconductor package (A) Substrate sheet, soluble adhesive layer provided on at least one surface of the substrate sheet in an intermittent pattern, and linear embankment adhesive layer surrounding a region where the soluble adhesive layer is present on the surface And a step of preparing an adhesive sheet, (B) a step of producing a first laminated body provided with a rewiring layer on a first supporting substrate, (C) A second laminated body in which a second support substrate is bonded to the surface of the first laminated body on the rewiring layer side using the adhesive sheet via the soluble adhesive layer and the embankment adhesive layer.
- the process of obtaining (D) a step of peeling the first supporting substrate from the second laminated body to obtain a third laminated body in which a surface of the rewiring layer on a side remote from the second supporting substrate is exposed; (E) The third laminated body is dipped in a developing solution and / or a stripping solution for a dry film resist, and / or a copper sulfate plating solution, and is applied to the surface of the rewiring layer away from the second supporting substrate.
- a step of performing pretreatment for chip mounting (F) mounting a semiconductor chip on the surface of the rewiring layer subjected to the pretreatment, (G) a step of immersing the third laminated body on which the semiconductor chip is mounted in a solution to dissolve or soften only the soluble adhesive layer or both the soluble adhesive layer and the embankment adhesive layer; (H) In a state where only the soluble adhesive layer or both the soluble adhesive layer and the embankment adhesive layer are dissolved or softened, the second support substrate is peeled from the third stacked body to obtain a semiconductor package.
- a method is provided, including:
- a base material sheet a soluble adhesive layer provided in an intermittent pattern on at least one surface of the base material sheet, and a periphery of a region where the soluble adhesive layer is present on the surface.
- a pressure-sensitive adhesive sheet for use in the above method, the pressure-sensitive adhesive sheet having a linear embankment adhesive layer surrounding the.
- FIG. 5 is a process flow chart showing an initial process in an example of a method for manufacturing a semiconductor package according to the present invention.
- FIG. 3 is a process flow chart showing a step that follows the step shown in FIG. 1A in the example of the method for manufacturing the semiconductor package according to the present invention.
- FIG. It is a schematic top view of an example of the adhesive sheet prepared by this invention. It is a schematic cross section which shows the layer structure in the 2B-2B 'line cross section of the adhesive sheet shown by FIG. 2A.
- the method of manufacturing a semiconductor package according to the present invention includes (a) preparation of an adhesive sheet, (b) preparation of a first laminate, (c) lamination of a reinforcing sheet, (d) peeling of a first support substrate, (e) chip.
- Each step of pre-processing for mounting, (f) chip mounting, (g) dissolution or softening of the adhesive layer, and (h) peeling of the reinforcing sheet is included.
- Adhesive Sheet As shown in FIGS. 2A and 2B, the base material sheet 15, the soluble adhesive layer 16a provided in an intermittent pattern on at least one surface of the base material sheet 15, and the soluble surface An adhesive sheet 17 having a linear embankment adhesive layer 16b surrounding the area where the adhesive layer 16a is present is prepared.
- the soluble adhesive layer 16a and the embankment adhesive layer 16b may be collectively referred to as "adhesive layer 16".
- the details of the adhesive sheet 17 will be described later.
- the pressure-sensitive adhesive sheet includes an "adhesive pressure-sensitive adhesive sheet" used for adhering the base sheet itself to an adherend via an adhesive layer, and an adhesive layer transferred to an adherend or a second base sheet.
- the pressure-sensitive adhesive sheet 17 prepared in the present invention may be either an adhesive pressure-sensitive adhesive sheet or a transfer pressure-sensitive adhesive sheet.
- a first laminated body 14 having the rewiring layer 12 on the first support substrate 10 is prepared.
- the first support substrate 10 serves as a base for forming the redistribution layer 12.
- the first support substrate 10 may be in the form of a so-called metal foil with a carrier, and a known layer structure can be adopted.
- the first support substrate 10 may include a base material, a release layer, and a metal layer in that order.
- a laminated sheet disclosed in Patent Document 3 International Publication No. 2018/097265
- the base material of this laminated sheet can be made of a resin film, glass or ceramics).
- the redistribution layer 12 is preferably formed on the metal layer surface of the first supporting substrate 10.
- the rewiring layer means a layer including an insulating layer and a wiring layer formed inside and / or on the surface of the insulating layer.
- the chip electrodes arranged on the semiconductor chip and the terminals arranged on the printed wiring board at a pitch larger than that of the chip electrodes can be electrically connected.
- the redistribution layer 12 may be formed according to a known method and is not particularly limited.
- the rewiring layer 12 can be formed by alternately laminating the insulating layers and the wiring layers into a multi-layer by the build-up method described above.
- the adhesive sheet 17 is used to form the second support substrate 18 on the rewiring layer 12 side surface of the first laminate 14 with the soluble adhesive layer 16a.
- the 2nd laminated body 20 joined via the embankment adhesion layer 16b is obtained.
- the second laminated body 20 can be obtained by attaching the second support substrate 18 to the surface of the first laminated body 14 on the rewiring layer 12 side using the adhesive sheet 17.
- the redistribution layer 12 can be reinforced by the second support substrate 18 so as not to be largely curved locally.
- the second support substrate 18 functions as a reinforcing sheet, it is possible to avoid disconnection and peeling of the wiring layer on the surface and / or inside of the rewiring layer 12 and improve the connection reliability of the rewiring layer 12. it can. Further, since the curvature is effectively prevented or suppressed, the flatness (coplanarity) of the surface of the redistribution layer 12 can be improved.
- a pretreatment process for example, a photolithography process
- a developing solution or a peeling solution for a dry film resist, a copper sulfate plating solution are used.
- the adhesive layer 16 is composed of only the soluble adhesive layer 16a
- the chemical liquid is brought into the next step by permeating between the patterns of the soluble adhesive layer 16a, and as a result, the chemical liquid used in the subsequent step. Can be a problem when it is contaminated.
- the soluble adhesive layer 16a may be dissolved or softened by the chemical solution used in the step before the peeling step of the second supporting substrate 18, and the second supporting substrate 18 may be unintentionally peeled during the manufacturing process. is there.
- the adhesive sheet 17 prepared in the present invention employs not only the soluble adhesive layer 16a but also the embankment adhesive layer 16b as the adhesive layer 16. That is, in the method of the present invention, as one of the adhesive layers 16 for adhering the rewiring layer 12 and the second supporting substrate 18, a linear embankment adhesive layer 16b surrounding the area where the soluble adhesive layer 16a is present.
- the chemical solution used in the process before the peeling process of the second support substrate 18 is blocked by the embankment adhesive layer 16b. Therefore, it is possible to delay (or in some cases not to reach) the time when the chemical solution reaches the region where the soluble adhesive layer 16a exists, and prevent or suppress the chemical solution from penetrating into the gaps of the pattern of the soluble adhesive layer 16a. You can As a result, it is possible to effectively prevent the contamination of the chemical solution used in the pretreatment step and the like and the unintentional peeling of the second supporting substrate 18 which is the reinforcing sheet.
- the embankment adhesive layer 16b is preferably located in a region within a range of 0 mm or more and 20 mm or less from the end portion of the second supporting substrate 18, more preferably 0 mm or more and 10 mm or less, and further preferably 0 mm or more and 2 mm or less.
- the embankment adhesion layer 16b is preferably located in a region within a range of 0 mm or more and 20 mm or less from the end of the rewiring layer 12, more preferably 10 mm or more and 20 mm or less, and further preferably 15 mm or more and 20 mm or less.
- the chemical solution can be dammed near the rewiring layer 12 and / or the end portion of the second support substrate 18, and the time for the chemical solution to reach the region where the soluble adhesive layer 16a is present can be further delayed.
- the region of the rewiring layer 12 that can be used can be maximized by adopting the above configuration.
- a region of 50% or more and 100% or less in the width direction of the embankment adhesive layer 16b is in contact with the rewiring layer 12 over the entire length of the embankment adhesive layer 16b, more preferably 70% or more and 100% or less, and further preferably It is 90% or more and 100% or less.
- the embankment adhesive layer 16b can sufficiently surround the periphery of the region where the soluble adhesive layer 16a exists, and the chemical solution can be more effectively dammed.
- the area in contact with the rewiring layer 12 in the width direction of the embankment adhesion layer 16b is less than 100%, it is assumed that a part of the embankment adhesion layer 16b protrudes from the end of the rewiring layer 12. ing.
- the chemical solution can be prevented or suppressed from entering from the part, and the present invention also includes such an aspect. Shall be.
- the pressure-sensitive adhesive sheet 17 is an adhesive pressure-sensitive adhesive sheet
- the pressure-sensitive adhesive sheet 17 is attached to the surface of the first laminate 14 on the rewiring layer 12 side, and the base material sheet 15 itself is used as the second support substrate 18.
- the pressure-sensitive adhesive sheet 17 is a transfer-type pressure-sensitive adhesive sheet
- the pressure-sensitive adhesive sheet 17 is attached to the second supporting substrate 18 or the first multilayer body 14 prior to the bonding of the first laminated body 14 and the second supporting substrate 18. It is preferable that the adhesive layer 16 is attached and transferred to the second support substrate 18 or the first laminate 14, and the base material sheet 15 is peeled off.
- the transfer method is not particularly limited, and a known method such as roll lamination can be adopted.
- the second supporting substrate 18 preferably has a Vickers hardness lower than that of the first supporting substrate 10. As a result, the second support substrate 18 itself bends, so that the stress that may occur during stacking or peeling can be well escaped, and as a result, the curvature of the redistribution layer 12 can be effectively prevented or suppressed. ..
- the Vickers hardness of the second support substrate 18 is preferably 2% or more and 99% or less of the Vickers hardness of the rewiring layer 12, more preferably 6% or more and 90% or less, and further preferably 10% or more and 85% or less. ..
- the Vickers hardness of the second support substrate 18 is preferably 50 HV or more and 700 HV or less, more preferably 150 HV or more and 550 HV or less, and further preferably 170 HV or more and 500 HV or less.
- the Vickers hardness is measured according to the "Vickers hardness test" described in JIS Z 2244-2009.
- the Vickers hardness HV of various materials are illustrated below: Sapphire glass (2300 HV), cemented carbide (1700 HV), cermet (1650 HV), quartz (quartz) (1103 HV), SKH56 (high speed tool).
- the material of the second support substrate 18 is not particularly limited, but resin, metal, glass, or a combination thereof is preferable.
- the resin include an epoxy resin, a polyimide resin, a polyethylene resin, and a phenol resin, and a prepreg composed of such a resin and a fiber reinforcing material may be used.
- the metal include stainless steel and copper alloys (for example, bronze, phosphor bronze, copper nickel alloy, and copper titanium alloy) from the viewpoint of the Vickers hardness and the spring limit value Kb 0.1 , but they have chemical resistance. From the viewpoint, stainless steel is particularly preferable.
- the form of the second support substrate 18 is not limited to a sheet shape as long as the curvature of the redistribution layer 12 can be prevented or suppressed, and other forms such as a film, a plate, and a foil may be used, and preferably a sheet or a plate is used. It is a form.
- the second support substrate 18 may be a laminate of these sheets, films, plates, foils and the like. Typical examples of the second support substrate 18 include a metal sheet, a resin sheet (particularly a hard resin sheet), and a glass sheet.
- the thickness of the second support substrate 18 is preferably 10 ⁇ m or more and 1 mm or less, more preferably 50 ⁇ m or more and 800 ⁇ m or less, from the viewpoint of maintaining the strength of the second support substrate 18 and easiness of handling the second support substrate 18. It is preferably 100 ⁇ m or more and 600 ⁇ m or less.
- the second support substrate 18 is a metal sheet (for example, a stainless steel sheet)
- the ten-point average roughness Rz-jis (JIS B 0601-2001) of the surface of the metal sheet that is in close contact with the adhesive layer 16 is used.
- (Measured) is preferably 0.05 ⁇ m or more and 500 ⁇ m or less, more preferably 0.5 ⁇ m or more and 400 ⁇ m or less, and further preferably 1 ⁇ m or more and 300 ⁇ m or less. With such a surface roughness, it is considered that the adhesion effect with the adhesive layer 16 is enhanced by the anchor effect resulting from the unevenness of the surface, and an appropriate peel strength in the adhesive layer 16 is realized.
- (D) Peeling of First Support Substrate As shown in FIG. 1A (iii), the side where the first support substrate 10 is peeled from the second stacked body 20 and the redistribution layer 12 is separated from the second support substrate 18.
- the third laminated body 22 whose surface is exposed is obtained.
- the base material, the peeling layer, and the like that form the first supporting substrate 10 are peeled and removed from the rewiring layer 12.
- This peeling and removal is preferably performed by physical peeling.
- the physical peeling method is a method of separating the first support substrate 10 by peeling it from the rewiring layer 12 with a hand, a jig, a machine, or the like.
- the second support substrate 18 adhered through the adhesive layer 16 reinforces the redistribution layer 12, it is possible to prevent the redistribution layer 12 from being largely curved locally. That is, the second support substrate 18 can reinforce the rewiring layer 12 to resist the peeling force while the first support substrate 10 is peeled off, and can more effectively prevent or suppress the bending. In this way, disconnection or peeling of the wiring layer on the inside and / or the surface of the rewiring layer 12 which may be caused by the curvature can be avoided, and the connection reliability of the rewiring layer 12 can be improved. Further, since the curvature is effectively prevented or suppressed, the flatness (coplanarity) of the surface of the redistribution layer 12 can be improved.
- the metal layer that may remain on the surface of the third stacked body 22 be removed by etching before the chip mounting pretreatment process described below. ..
- the etching of the metal layer may be performed based on a known method such as flash etching.
- the third laminated body 22 is dipped in a developing solution and / or a stripping solution for a dry film resist, and / or a copper sulfate plating solution, and then reprocessed.
- Pretreatment for chip mounting is performed on the surface of the wiring layer 12 on the side away from the second support substrate 18.
- This pretreatment can be performed by the following procedure, for example. First, a dry film is attached to the surface of the redistribution layer 12 on the side away from the second support substrate 18, and exposure and development are performed to form a dry film resist.
- the third laminate 22 is dipped in a copper sulfate plating solution to form electrolytic copper plating on the surface of the redistribution layer 12 where the dry film resist is not formed.
- the formed dry film resist is peeled off by immersing the third laminate 22 in a peeling solution.
- electrodes for example, columnar electrodes
- the pretreatment of this step may include a treatment of immersing the third laminate 22 in a dry film resist developing solution and / or a stripping solution and / or a copper sulfate plating solution.
- the treatment method is not particularly limited as long as the surface of the layer 12 can be mounted with a semiconductor chip.
- a developing solution and a stripping solution for the dry film resist a known solution used for developing or removing the dry film resist can be adopted.
- An example of a preferred dry film resist developer is an aqueous solution of sodium carbonate
- an example of a preferred dry film resist stripper is an aqueous solution of sodium hydroxide, potassium hydroxide, aminoethanol, tetramethylammonium hydroxide or the like.
- the copper sulfate plating solution may be a solution containing at least copper sulfate and sulfuric acid.
- Known additives may be contained in the developing solution and stripping solution of the dry film resist, and the copper sulfate plating solution.
- the semiconductor chip 24 is mounted on the surface of the pre-processed redistribution layer 12.
- the manufacturing method of the present invention by stacking the second supporting substrate 18 on the surface of the rewiring layer 12 with the adhesive layer 16 interposed therebetween, excellent surface flatness (coplanarity) which is advantageous for mounting the semiconductor chip 24 is restored. It can be realized on the surface of the wiring layer 12 on the side away from the second support substrate 18. That is, even when the semiconductor chip 24 is mounted, the redistribution layer 12 is not locally largely curved by the second support substrate 18. As a result, the connection yield of the semiconductor chips 24 can be increased.
- Examples of the semiconductor chip 24 include semiconductor elements, chip capacitors, resistors, and the like.
- Examples of chip mounting methods include a flip chip mounting method and a die bonding method.
- the flip-chip mounting method is a method of bonding the mounting pad of the semiconductor chip 24 and the wiring layer of the rewiring layer 12.
- Columnar electrodes (pillars), solder bumps, etc. may be formed on this mounting pad, and NCF (Non-Conductive Film), which is a sealing resin film, is attached to the surface of the rewiring layer 12 before mounting. Good.
- the joining is preferably performed using a low melting point metal such as solder, but an anisotropic conductive film or the like may be used.
- the die bonding adhesion method is a method of adhering the surface of the semiconductor chip 24 opposite to the mounting pad surface to the wiring layer.
- a paste or film which is a resin composition containing a thermosetting resin and a heat conductive inorganic filler.
- the semiconductor chip 24 is sealed with the sealing material 26 as shown in FIG. 1B (v), which further improves the rigidity of the entire stacked body of the redistribution layer 12 and the semiconductor chip 24. It is preferable because it is possible.
- the third laminated body 22 on which the semiconductor chip 24 is mounted is immersed in a solution to dissolve or soften the adhesive layer 16.
- the dissolution or softening of the adhesive layer 16 may be such that only the soluble adhesive layer 16a is dissolved or softened, or both the soluble adhesive layer 16a and the embankment adhesive layer 16b are dissolved or softened. That is, the solution used in this step may be a solution capable of dissolving at least the soluble adhesive layer 16a (hereinafter referred to as a solution).
- the soluble adhesive layer 16a When only the soluble adhesive layer 16a is dissolved or softened, it is preferable to form a gap G described later in the embankment adhesive layer 16b in order to secure a passage for the chemical solution.
- the soluble adhesive layer 16a comes into contact with the solution and is dissolved or softened.
- the soluble pressure-sensitive adhesive layer 16a is configured in an intermittent pattern, it is possible to effectively permeate the solution into every corner of the soluble pressure-sensitive adhesive layer 16a and accelerate the dissolution or softening of the soluble pressure-sensitive adhesive layer 16a. Become.
- the third laminate 22 is dipped in the solution, the solution effectively permeates into the gaps in the pattern of the soluble adhesive layer 16a, and the contact with each adhesive region is promoted. it is conceivable that.
- the third stacked body 22 does not necessarily have to be entirely immersed in the solution, and a part thereof may be immersed in the solution.
- the embankment adhesive layer 16b is adopted as the adhesive layer 16.
- the embankment adhesive layer 16b is composed of the same or similar component as the soluble adhesive layer 16a (component capable of being dissolved or softened by the same solution).
- a step of cutting out the region where the embankment adhesive layer 16b exists may be added after the above-mentioned (f) chip mounting step and before (h) a peeling sheet peeling step to be described later.
- the portion of the third laminate 22 that is in close contact with the embankment adhesion layer 16b can be removed, and therefore the rewiring layer does not need to be dissolved or softened.
- the second support substrate 18 can be easily peeled from the substrate 12.
- the region where the embankment adhesive layer 16b is present is excised before the immersion of the dissolution liquid, the dissolution liquid reaches the region where the soluble adhesion layer 16a exists without being blocked by the embankment adhesion layer 16b. It is possible to dissolve or soften the layer 16a more quickly.
- the cutting of the region where the embankment adhesion layer 16b exists may be performed manually using a cutting tool such as a cutter, or may be mechanically performed using a cutting machine or the like.
- the solution is not particularly limited as long as it has a desired dissolving power depending on the material of the soluble adhesive layer 16a.
- the solution may be an alkaline solution.
- alkaline solutions include sodium hydroxide solution and / or potassium hydroxide solution.
- the preferred concentration of these solutions is 0.5% by weight or more and 50% by weight or less. Within this range, the alkalinity will be high, the dissolving power will be improved, and sodium hydroxide and / or potassium hydroxide will be less likely to precipitate even when the room temperature is low when the solution is used.
- an organic substance for example, ethanolamine
- aqueous solution is alkaline
- water or an aqueous solution may be used as the solution.
- an organic solvent for example, 2-propanol
- an organic solvent capable of dissolving the acrylic resin and / or the novolac resin
- the preferable addition amount of this organic solvent is 5% by weight or more and 50% by weight or less based on 100% by weight of the alkaline solution. Within this range, the volatilization amount during the work is reduced while the shortening of the dissolution time is desirably realized, so that the concentration of the alkaline substance can be easily controlled and the safety is improved.
- a preferred organic solvent is alcohol, and preferred examples of alcohol include 2-propanol, methanol, ethanol, and 2-butanol.
- An appropriate amount of surfactant may be added to the alkaline solution.
- the addition of the surfactant improves the permeability and wettability of the solution with respect to the resin, so that the dissolution time of the soluble adhesive layer 16a and / or the embankment adhesive layer 16b can be further shortened.
- the kind of the surfactant is not particularly limited and may be any kind.
- any of anionic, cationic and nonionic surfactants can be used as the water-soluble surfactant.
- the third laminated body 22 with only the soluble adhesive layer 16a or both the soluble adhesive layer 16a and the embankment adhesive layer 16b dissolved or softened The second support substrate 18 is peeled off from the semiconductor package 28 to obtain a semiconductor package 28.
- the second support substrate 18 can be easily peeled off due to dissolution, softening or cutting of the adhesive layer 16.
- the peeling of the second support substrate 18 from the third stacked body 22 may be automatically peeled by melting or cutting the adhesive layer 16, or the adhesive force is significantly increased by melting or softening the adhesive layer 16. It may be one that is physically peeled off in a state of being lowered.
- the second support substrate 18 is in a state of being extremely easily peeled (or spontaneously peeled in some cases) due to dissolution, softening, and / or cutting of the adhesive layer 16, so that rewiring is performed.
- the second support substrate 18 can be peeled off in an extremely short time while minimizing the stress applied to the layer 12. By thus minimizing the stress applied to the redistribution layer 12, disconnection of the wiring in the redistribution layer 12 or disconnection of the mounting portion can be effectively avoided.
- the adhesive sheet 17 used in the method of the present invention is the base sheet 15 and the fusible sheet provided with an intermittent pattern on at least one surface of the base sheet 15.
- the pressure-sensitive adhesive layer 16a and a line-shaped embankment pressure-sensitive adhesive layer 16b surrounding the area where the soluble pressure-sensitive adhesive layer 16a is present on the surface are provided.
- the soluble adhesive layer 16a and the embankment adhesive layer 16b may be provided on both sides of the base material sheet 15.
- the intermittent pattern means a shape in which the soluble adhesive layer 16a exists intermittently (intermittently), and is formed by an adhesive region in which the soluble adhesive layer 16a exists and a non-adhesive region in which the soluble adhesive layer 16a does not exist.
- the intermittent pattern is preferably an island-shaped or stripe-shaped pattern, and more preferably an island-shaped pattern.
- the island-shaped pattern means a shape in which each sticky region is surrounded by non-sticky regions (for example, spaces) existing around the sticky region.
- Various shapes such as polygons and circles can be cited as specific shapes of the individual sticky areas forming the island pattern, and polygons and straight lines such as star-shaped polygons that are complicated It may have a different shape with complicated contour lines.
- the diameter of the circumscribed circle of each adhesive region is preferably 0.1 mm or more and 10 mm or less, more preferably 0.1 mm or more and 5.0 mm or less, It is preferably 0.1 mm or more and 2.0 mm or less.
- the stripe width of each adhesive region is preferably 0.1 mm or more and 10 mm or less, more preferably 0.1 mm or more and 5.0 mm or less, It is preferably 0.1 mm or more and 2.0 mm or less.
- the island pattern is preferably a dot pattern, and the shape of each dot is typically a circle, but it may be a shape close to a circle.
- the dot diameter which is defined as the diameter of the circumscribing circle of each dot forming the dot pattern, is preferably 10 mm or less, more preferably 0.1 mm or more and 5.0 mm or less, still more preferably 0.1 mm or more. It is 0 mm or less. By doing so, the surface area of the soluble adhesive layer 16a is increased and the solubility is improved. As a result, the peelability is improved.
- the soluble adhesive layer 16a preferably has a thickness of 0.5 ⁇ m or more and 50 ⁇ m or less, more preferably 1.0 ⁇ m or more and less than 30 ⁇ m, further preferably 1.0 ⁇ m or more and 20 ⁇ m or less, particularly preferably 2.0 ⁇ m or more and 15 ⁇ m or less. , And most preferably 3.0 ⁇ m or more and 10 ⁇ m or less.
- the thickness is within the above range, the dissolution liquid rapidly permeates into the gaps of the pattern of the soluble adhesive layer 16a, so that the dissolution or softening of the soluble adhesive layer 16a is promoted and, at the same time, the rewiring layer 12 of the intermittent pattern is formed. It is possible to reduce the indentation.
- the adhesive layer 16 is Occurrence of indentations may occur in the rewiring layer 12, but if the thickness of the soluble adhesive layer 16a is 7.0 ⁇ m or less, there is an advantage that indentations are less likely to remain in the rewiring layer 12 after compression molding.
- the soluble adhesive layer 16a has a dot pattern, if the dot diameter is 0.7 mm or less and the thickness of the soluble adhesive layer 16a is 1.0 ⁇ m or more and 7.0 ⁇ m or less, indentation is reduced. It is particularly preferable because both of releasability can be more effectively realized.
- the distance between the centers of the circumscribing circles in the adhesive area is preferably larger than the average value of the diameter of the circumscribing circle in order to ensure a sufficient gap between the individual adhesive areas.
- the distance between the centers of the circumscribing circles of the adhesive region is preferably more than 0.1 mm and 20 mm or less, more preferably 0.2 mm or more and 10 mm or less, still more preferably 0.3 mm or more and 5.0 mm or less, Particularly preferably, it is 0.4 mm or more and 2.0 mm or less. With such a range, the dissolution liquid quickly permeates into the gaps between the patterns of the soluble adhesive layer 16a, so that the releasability is improved.
- the island-like pattern may be composed of one or more clusters that result in a polygonal, circular, toric, strip-like or lattice-like pattern as a whole, each of the clusters having three or more adhesive regions.
- the soluble adhesive layer 16a is, of course, a layer that exhibits adhesiveness at room temperature and can be dissolved or softened by contact with a solution. Therefore, the soluble adhesive layer 16a preferably contains a solution-soluble resin, for example, an acid-soluble resin or an alkali-soluble resin. This solution-soluble resin can be efficiently dissolved or softened by contact with a solution, so that the second support substrate 18 can be more effectively peeled from the rewiring layer 12. ..
- the alkali-soluble resin particularly preferably contains a polymer containing at least one of a carboxyl group and a phenolic hydroxyl group. Since such a polymer is particularly soluble in an alkaline solution, it promotes the dissolution of the soluble adhesive layer 16a and enables the second support substrate 18 to be peeled from the rewiring layer 12 in a shorter time.
- the polymer containing at least one of a carboxyl group and a phenolic hydroxyl group include an acrylic resin containing a carboxyl group and a phenol novolac resin containing a phenolic hydroxyl group.
- the acrylic resin-based pressure-sensitive adhesive copolymerizes an acrylic monomer having a carboxyl group and an unsaturated double bond in the molecule (for example, acrylic acid or methacrylic acid) with ethyl acrylate or butyl acrylate. It can be synthesized by By adjusting the type and ratio of the acrylic monomer during the synthesis, it becomes possible to control the adhesive strength of the soluble adhesive layer 16a and the solubility in the alkaline solution. In addition, the adhesive strength of the soluble adhesive layer 16a and the solubility in an alkaline solution can be controlled by adding a resin (for example, an epoxy resin) that causes a crosslinking reaction of a carboxyl group to an acrylic resin containing a carboxyl group.
- a resin for example, an epoxy resin
- Alkali-soluble resin may be added with alkali in advance. By doing so, it becomes possible to dissolve or soften the soluble adhesive layer 16a using water or an aqueous solution as a solution. That is, when the soluble adhesive layer 16a comes into contact with water or an aqueous solution, the liquid property of the water or the like is changed to alkaline by the alkali added in advance, and thereby the soluble adhesive layer 16a containing the alkali-soluble resin is dissolved or It becomes possible to soften. Since it is assumed that a neutral or acidic solution is used in the washing step or the like in the manufacture of the semiconductor package, it is originally desired that the soluble adhesive layer 16a is not dissolved in the neutral or acidic solution.
- the embankment adhesive layer 16b effectively prevents or suppresses the contact between the chemical liquid and the soluble adhesive layer 16a in the manufacturing process, so that the alkali-soluble resin may be preliminarily added with an alkali. Permissible.
- the embankment adhesive layer 16b may be any adhesive as long as it exhibits adhesiveness at room temperature, and can be configured by appropriately using a known material.
- the embankment adhesion layer 16b may be one that comes into contact with a dissolution liquid to dissolve or soften.
- the material of the embankment adhesive layer 16b may be the same as that of the soluble adhesive layer 16a, and the preferred embodiment of the soluble adhesive layer 16a described above is also applicable to the embankment adhesive layer 16b.
- the embankment adhesive layer 16b may be a part of which melts or softens due to contact with a chemical solution used in a step before the peeling step, but in order to surely prevent the chemical solution, the embankment adhesive layer 16b extends in the line width direction. It is desirable to configure it so that it does not completely dissolve.
- the line width is preferably such that the embankment adhesion layer 16b is rapidly dissolved or softened by contact with the solution.
- the embankment adhesive layer 16b preferably has a line width of 0.5 mm or more and 10.0 mm or less, more preferably 1.0 mm or more and 5.0 mm or less, and further preferably 1.0 mm or more. It is 3.0 mm or less, particularly preferably 1.0 mm or more and 2.0 mm or less.
- the embankment adhesive layer 16b preferably has a thickness of 0.5 ⁇ m or more and 50 ⁇ m or less, more preferably 1.0 ⁇ m or more and less than 30 ⁇ m, still more preferably 1.0 ⁇ m or more and 20 ⁇ m or less, and particularly preferably 2.0 ⁇ m or more.
- the thickness of the embankment adhesive layer 16b matches the thickness of the soluble adhesive layer 16a or It is preferable to approximate (for example, within ⁇ 10%).
- the embankment adhesive layer 16b is partially missing to form a gap G for venting gas from the region surrounded by the embankment adhesive layer 16b to the outside.
- the gas or the like generated from the soluble adhesive layer 16a can be discharged from the gap G to the outside of the embankment adhesive layer 16b, which may cause an unexpected increase of the internal pressure of the embankment adhesive layer 16b. It is possible to prevent peeling and deformation.
- the distance between the two ends of the embankment adhesion layer 16b that defines the gap G is preferably 1 mm or more and 50 mm or less, more preferably 1 mm or more and 30 mm or less, still more preferably 1 mm or more and 10 mm or less, and particularly preferably 1 mm or more and 5 mm or less. ..
- the number of the gaps G formed in the embankment adhesion layer 16b is preferably 1 or more and 10 or less, more preferably 1 or more and 6 or less, and further preferably 1 or more and 2 or less. By doing so, it is possible to achieve a good balance between venting the gas to the outside of the embankment adhesive layer 16b and suppressing the infiltration of the chemical solution into the embankment adhesive layer 16b.
- the outer peripheral length of the rewiring layer 12 is preferably 80% or more and 100% or less of the inner peripheral length of the embankment adhesion layer 16b, more preferably 85% or more and 100% or less, and further preferably 90% or more. It is 100% or less.
- the embankment adhesive layer 16b is arranged on the surface of the base material portion by the above configuration. As a result, the embankment adhesive layer 16b can be brought into close contact with the base material portion around the end portion of the rewiring layer 12.
- the distance of the gap G to the inner peripheral length of the embankment adhesion layer 16b (that is, the distance between both ends of the embankment adhesion layer 16b that divides the gap G) is included. It shall be.
- the embankment adhesive layer 16b having two gaps G when the inner peripheral length of the embankment adhesive layer 16b itself which does not include the gap G is 2000 mm and the distance of the gap G is 10 mm, the embankment adhesive layer 16b The inner peripheral length of is 2020 mm (2000 mm + 10 mm ⁇ 2).
- the clearance ratio is defined as the clearance ratio
- the gas removal to the outside of the embankment adhesion layer 16b and the inside of the embankment adhesion layer 16b are performed.
- the void ratio is preferably 0.3% or more and 20% or less, more preferably 0.5% or more and 12% or less, and further preferably 0.7% or more and 7% or less. Is.
- the area surrounded by the embankment adhesive layer 16b is typically 10 mm or more and 600 mm or less in length and 10 mm or more and 600 mm or less in width.
- the partition may be a rectangular area.
- the adhesive sheet 17 may be provided with one of the rectangular areas or may be provided with a plurality of the rectangular areas.
- the form of the base material sheet 15 is not limited to what is generally called a sheet, but may be another form such as a film, a plate, or a foil.
- the base sheet 15 may be a laminate of these sheets, films, plates, foils and the like.
- the surface of the base material sheet 15 to which the adhesive layer 16 is applied is subjected to a polishing treatment, a release agent application, a plasma treatment. Surface treatment may be performed in advance by a known method such as.
- the base sheet 15 is preferably composed of at least one resin of polyethylene terephthalate (PET) and polyethylene (PE), and more preferably polyethylene terephthalate (PET).
- PET polyethylene terephthalate
- PET polyethylene
- PET polyethylene terephthalate
- the adhesive sheet 17 is used as a transfer type adhesive sheet, it is desired that the base material sheet 15 has a function of holding the adhesive layer 16 and a function of transferring the adhesive layer 16 to the second supporting substrate 18 which is separately prepared.
- the base material sheet 15 of this embodiment is suitable for such applications.
- the thickness of the base material sheet 15 is preferably 10 ⁇ m or more and 200 ⁇ m or less, more preferably 20 ⁇ m or more and 150 ⁇ m or less, and further preferably 25 ⁇ m or more and 75 ⁇ m or less.
- the base material sheet 15 may be similar to the second support substrate 18, and the preferable embodiment of the second support substrate 18 described above is the base material sheet 15. Is also true.
- the base material sheet 15 has a function of holding the pressure-sensitive adhesive layer 16 and does not prevent the rewiring layer 12 from being improved in handleability and curving in the manufacturing process of the semiconductor package.
- a function as a reinforcing sheet to suppress is desired, but the base material sheet 15 of the present embodiment is suitable for such use.
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Abstract
Description
(a)基材シートと、該基材シートの少なくとも一方の面に間欠パターンで設けられた可溶性粘着層と、前記面において前記可溶性粘着層が存在する領域の周囲を取り囲む線状の築堤粘着層とを備えた、粘着シートを用意する工程と、
(b)第1支持基板上に再配線層を備えた第1積層体を作製する工程と、
(c)前記粘着シートを用いて、前記第1積層体の前記再配線層側の表面に、第2支持基板が前記可溶性粘着層及び前記築堤粘着層を介して結合された第2積層体を得る工程と、
(d)前記第2積層体から前記第1支持基板を剥離して、前記再配線層の前記第2支持基板から離れた側の表面が露出した第3積層体を得る工程と、
(e)前記第3積層体をドライフィルムレジストの現像液及び/若しくは剥離液、並びに/又は硫酸銅めっき液に浸漬させて、前記再配線層の前記第2支持基板から離れた側の表面にチップ実装のための前処理を行う工程と、
(f)前記前処理が施された前記再配線層の表面に半導体チップを実装する工程と、
(g)前記半導体チップが実装された第3積層体を溶液に浸漬して、前記可溶性粘着層のみ、又は前記可溶性粘着層及び前記築堤粘着層の両方を溶解又は軟化させる工程と、
(h)前記可溶性粘着層のみ、又は前記可溶性粘着層及び前記築堤粘着層の両方が溶解又は軟化された状態で、前記第3積層体から前記第2支持基板を剥離して、半導体パッケージを得る工程と、
を含む、方法が提供される。
図2A及び図2Bに示されるように、基材シート15と、基材シート15の少なくとも一方の面に間欠パターンで設けられた可溶性粘着層16aと、当該面において可溶性粘着層16aが存在する領域の周囲を取り囲む線状の築堤粘着層16bとを備えた、粘着シート17を用意する。以下の説明において、可溶性粘着層16aと築堤粘着層16bとを併せて「粘着層16」と称することがある。また、粘着シート17の詳細については後述するものとする。なお、粘着シートには、粘着層を介して基材シート自体を被着体に接着させるために用いられる「接着型粘着シート」と、粘着層を被着体又は第二の基材シートに転写させて当初の基材シートを剥離することで、被着体又は第二の基材シートに粘着性を付与するために用いられる「転写型粘着シート」の2つのタイプが存在する。この点、本発明で用意する粘着シート17は接着型粘着シート及び転写型粘着シートのいずれであってもよい。
図1A(i)に示されるように、第1支持基板10上に再配線層12を備えた第1積層体14を作製する。第1支持基板10は再配線層12を形成するためのベースとなるものである。第1支持基板10は、いわゆるキャリア付金属箔の形態であってもよく、公知の層構成が採用可能である。例えば、第1支持基板10は、基材、剥離層及び金属層を順に備えるものであってもよく、例えば特許文献3(国際公開第2018/097265号)に開示される積層シートを好ましく用いることができる(この積層シートの基材は樹脂フィルム、ガラス又はセラミックスで構成されうる)。この場合、再配線層12が第1支持基板10の金属層表面に作製されるのが好ましい。
図1A(ii)に示されるように、粘着シート17を用いて、第1積層体14の再配線層12側の表面に、第2支持基板18が可溶性粘着層16a及び築堤粘着層16bを介して結合された第2積層体20を得る。例えば、第1積層体14の再配線層12側の表面に粘着シート17を用いて第2支持基板18を貼り付けることにより、第2積層体20を得ることができる。こうすることで、再配線層12は第2支持基板18によって局部的に大きく湾曲されないように補強されることができる。すなわち、第2支持基板18が補強シートとして機能するため、再配線層12の表面及び/又は内部の配線層の断線や剥離を回避して、再配線層12の接続信頼性を向上することができる。また、湾曲が効果的に防止ないし抑制されることで、再配線層12表面の平坦性(コプラナリティ)を向上することができる。
図1A(iii)に示されるように、第2積層体20から第1支持基板10を剥離して、再配線層12の第2支持基板18から離れた側の表面が露出した第3積層体22を得る。こうすることで、例えば第1支持基板10を構成する基材及び剥離層等が再配線層12から剥離除去される。この剥離除去は物理的な剥離により行われるのが好ましい。物理的剥離法は、手や治工具、機械等で第1支持基板10を再配線層12から引き剥がすことにより分離する手法である。このとき、粘着層16を介して密着した第2支持基板18が再配線層12を補強していることで、再配線層12が局部的に大きく湾曲するのを防止することができる。すなわち、第2支持基板18は、第1支持基板10が剥離される間、引き剥がし力に抗すべく再配線層12を補強し、湾曲をより一層効果的に防止ないし抑制することができる。こうして湾曲により引き起こされることがある再配線層12の内部及び/又は表面の配線層の断線や剥離を回避して、再配線層12の接続信頼性を向上することができる。また、湾曲が効果的に防止ないし抑制されることで、再配線層12表面の平坦性(コプラナリティ)を向上することができる。なお、第1支持基板10が金属層を含む場合には、後述するチップ実装用の前処理工程の前に、第3積層体22の表面に残留しうる金属層をエッチングにより除去するのが好ましい。金属層のエッチングはフラッシュエッチング等の公知の手法に基づき行えばよい。
図1B(iv)に示されるように、第3積層体22をドライフィルムレジストの現像液及び/若しくは剥離液、並びに/又は硫酸銅めっき液に浸漬させて、再配線層12の第2支持基板18から離れた側の表面にチップ実装のための前処理を行う。この前処理は、例えば以下のような手順で行うことができる。まず、再配線層12の第2支持基板18から離れた側の表面にドライフィルムを貼り付け、露光及び現像を行い、ドライフィルムレジストを形成する。そして、第3積層体22を硫酸銅めっき液に浸漬させて、再配線層12のドライフィルムレジストが形成されていない表面に電解銅めっきを形成する。次に、第3積層体22を剥離液に浸漬させることにより、形成したドライフィルムレジストを剥離する。こうすることで、半導体チップ上に配置されたチップ電極と接続するための電極(例えば柱状電極)等を再配線層12の第2支持基板18から離れた側の表面に形成することができる。いずれにしても、本工程の前処理は、第3積層体22をドライフィルムレジストの現像液及び/若しくは剥離液、並びに/又は硫酸銅めっき液に浸漬させる処理を含んでいればよく、再配線層12の表面を半導体チップが実装可能な状態にできる限り、その処理方法は特に限定されない。ドライフィルムレジストの現像液及び剥離液は、ドライフィルムレジストを現像ないし除去するために用いられる公知の溶液が採用可能である。好ましいドライフィルムレジストの現像液の例としては、炭酸ナトリウム水溶液が挙げられ、好ましいドライフィルムレジストの剥離液の例としては、水酸化ナトリウム、水酸化カリウム、アミノエタノール、水酸化テトラメチルアンモニウム等の水溶液が挙げられる。また、硫酸銅めっき液は、少なくとも硫酸銅及び硫酸を含む溶液であればよい。ドライフィルムレジストの現像液及び剥離液、並びに硫酸銅めっき液には、公知の添加剤が含まれていてもよい。
図1B(v)に示されるように、前処理が施された再配線層12の表面に半導体チップ24を実装する。本発明の製造方法においては、再配線層12の表面に粘着層16を介して第2支持基板18を積層することで半導体チップ24の実装に有利となる優れた表面平坦性(コプラナリティ)を再配線層12の第2支持基板18から離れた側の表面において実現することができる。すなわち、半導体チップ24の実装時においても、再配線層12は第2支持基板18によって局部的に大きく湾曲されずに済む。その結果、半導体チップ24の接続歩留まりを高くすることができる。
図1B(vi)に示されるように、半導体チップ24が実装された第3積層体22を溶液に浸漬して、粘着層16を溶解又は軟化させる。粘着層16の溶解又は軟化は、可溶性粘着層16aのみを溶解又は軟化させるものであってもよいし、可溶性粘着層16a及び築堤粘着層16bの両方を溶解又は軟化させるものであってもよい。すなわち、本工程で用いられる溶液は、少なくとも可溶性粘着層16aを溶解可能な溶液(以下、溶解液という)であればよい。可溶性粘着層16aのみを溶解又は軟化させるものである場合は、薬液の浸入経路を確保するため、築堤粘着層16bに後述する隙間Gを形成することが好ましい。第3積層体22を溶解液に浸漬することにより、可溶性粘着層16aが溶解液と接触して溶解又は軟化する。このとき、可溶性粘着層16aが間欠パターンで構成されているので、溶解液が可溶性粘着層16aの隅々まで効果的に浸透して、可溶性粘着層16aの溶解又は軟化を促進させることが可能となる。これは、第3積層体22を溶解液に浸漬した際、溶解液が可溶性粘着層16aのパターンの隙間に効果的に浸透して、個々の粘着性領域との接触が促進されることによるものと考えられる。第3積層体22は、必ずしも全体を溶液に浸漬させる必要はなく、一部を溶液に浸漬させてもよい。一方、本発明では粘着層16として可溶性粘着層16aだけでなく築堤粘着層16bも採用している。この点、築堤粘着層16bを可溶性粘着層16aと同一又は類似の成分(同じ溶解液で溶解又は軟化させることができる成分)で構成するのが好ましい。こうすることで、第3積層体22を溶解液に浸漬させることにより、可溶性粘着層16a及び築堤粘着層16bの両方を速やかに溶解又は軟化させることができる。
図1B(vii)に示されるように、可溶性粘着層16aのみ、又は可溶性粘着層16a及び築堤粘着層16bの両方が溶解又は軟化された状態で、第3積層体22から第2支持基板18を剥離して、半導体パッケージ28を得る。第2支持基板18は粘着層16の溶解、軟化又は切除に起因して容易に剥離することができる。なお、第3積層体22からの第2支持基板18の剥離は、粘着層16の溶解又は切除によって自動的に剥がれるものであってもよいし、粘着層16の溶解又は軟化によって粘着力が有意に低下した状態で物理的に引き剥がすものであってもよい。いずれにしても、第2支持基板18は粘着層16の溶解、軟化及び/又は切除に起因して極めて剥離しやすい状態となっている(又は場合によっては自然剥離している)ため、再配線層12に与える応力を最小化しながら極めて短時間で第2支持基板18の剥離を行うことができる。こうして再配線層12に加わる応力が最小化されることで、再配線層12における配線の断線や実装部の断線を効果的に回避することができる。
図2A及び図2Bを参照しつつ上述したとおり、本発明の方法に用いられる粘着シート17は、基材シート15と、基材シート15の少なくとも一方の面に間欠パターンで設けられた可溶性粘着層16aと、当該面において可溶性粘着層16aが存在する領域の周囲を取り囲む線状の築堤粘着層16bとを備える。可溶性粘着層16a及び築堤粘着層16bは基材シート15の両面に設けられてもよい。間欠パターンとは、可溶性粘着層16aが間欠的(途切れ途切れ)に存在する形状を意味し、可溶性粘着層16aが存在する粘着性領域と、可溶性粘着層16aが存在しない非粘着性領域とによって形成される。間欠パターンは島状又はストライプ状のパターンであるのが好ましく、より好ましくは島状のパターンである。島状のパターンとは、個々の粘着性領域が、その周りに存在する非粘着性領域(例えば空間)によって取り囲まれた形状を意味する。島状のパターンを構成する個々の粘着性領域の具体的形状としては、多角形、円形等の様々な形状が挙げられ、星形多角形のような直線の輪郭線が入り組んだ多角形、曲線の輪郭線が入り組んだ異形状であってもよい。
Claims (19)
- 半導体パッケージの製造方法であって、
(a)基材シートと、該基材シートの少なくとも一方の面に間欠パターンで設けられた可溶性粘着層と、前記面において前記可溶性粘着層が存在する領域の周囲を取り囲む線状の築堤粘着層とを備えた、粘着シートを用意する工程と、
(b)第1支持基板上に再配線層を備えた第1積層体を作製する工程と、
(c)前記粘着シートを用いて、前記第1積層体の前記再配線層側の表面に、第2支持基板が前記可溶性粘着層及び前記築堤粘着層を介して結合された第2積層体を得る工程と、
(d)前記第2積層体から前記第1支持基板を剥離して、前記再配線層の前記第2支持基板から離れた側の表面が露出した第3積層体を得る工程と、
(e)前記第3積層体をドライフィルムレジストの現像液及び/若しくは剥離液、並びに/又は硫酸銅めっき液に浸漬させて、前記再配線層の前記第2支持基板から離れた側の表面にチップ実装のための前処理を行う工程と、
(f)前記前処理が施された前記再配線層の表面に半導体チップを実装する工程と、
(g)前記半導体チップが実装された第3積層体を溶液に浸漬して、前記可溶性粘着層のみ、又は前記可溶性粘着層及び前記築堤粘着層の両方を溶解又は軟化させる工程と、
(h)前記可溶性粘着層のみ、又は前記可溶性粘着層及び前記築堤粘着層の両方が溶解又は軟化された状態で、前記第3積層体から前記第2支持基板を剥離して、半導体パッケージを得る工程と、
を含む、方法。 - 前記粘着シートが接着型粘着シートであり、前記工程(c)が、前記第1積層体の前記再配線層側の表面に前記粘着シートを貼り付けて、前記基材シート自体を前記第2支持基板として用いる工程を含む、請求項1に記載の方法。
- 前記粘着シートが転写型粘着シートであり、前記工程(c)が、前記第1積層体と前記第2支持基板との結合に先立ち、前記第2支持基板、又は前記第1積層体に前記粘着シートを貼り付けて、前記可溶性粘着層及び前記築堤粘着層を前記第2支持基板、又は前記第1積層体に転写するとともに、前記基材シートを剥離する工程を含む、請求項1に記載の方法。
- 前記築堤粘着層の一部が欠損して、前記築堤粘着層で取り囲まれる領域からその外部へのガス抜きをするための隙間を形成している、請求項1から請求項3までのいずれか一項に記載の方法。
- 前記隙間を区画する前記築堤粘着層の両端の離間距離が1mm以上50mm以下である、請求項4に記載の方法。
- 前記隙間の数が1個以上10個以下である、請求項4又は請求項5に記載の方法。
- 前記工程(c)において、前記築堤粘着層が、前記第2支持基板の端部から0mm以上20mm以下の範囲内の領域に位置する、請求項1から請求項6までのいずれか一項に記載の方法。
- 前記工程(c)において、前記築堤粘着層が、前記再配線層の端部から0mm以上20mm以下の範囲内の領域に位置する、請求項1から請求項7までのいずれか一項に記載の方法。
- 前記工程(c)において、前記築堤粘着層の全長にわたって、前記築堤粘着層の幅方向の50%以上100%以下の領域が前記再配線層と接している、請求項1から請求項8までのいずれか一項に記載の方法。
- 前記再配線層の外周長さが、前記築堤粘着層の内周長さ(但し、前記隙間が存在する場合には当該隙間の距離を算入するものとする)の80%以上100%以下である、請求項1から請求項9までのいずれか一項に記載の方法。
- 前記築堤粘着層の線幅が0.5mm以上10.0mm以下である、請求項1から請求項10までのいずれか一項に記載の方法。
- 前記築堤粘着層の厚さが0.5μm以上50μm以下であり、かつ、前記可溶性粘着層の厚さが0.5μm以上50μm以下である、請求項1から請求項11までのいずれか一項に記載の方法。
- 前記築堤粘着層によって取り囲まれる区画が、縦10mm以上600mm以下及び横10mm以上600mm以下のサイズの矩形状領域であり、前記粘着シートは、前記矩形状領域を1つ又は複数個備えている、請求項1から請求項12までのいずれか一項に記載の方法。
- 前記可溶性粘着層が溶液可溶型樹脂を含む、請求項1から請求項13までのいずれか一項に記載の方法。
- 前記溶液可溶型樹脂がアルカリ可溶型樹脂である、請求項14に記載の方法。
- 前記間欠パターンが島状又はストライプ状のパターンである、請求項1から請求項15までのいずれか一項に記載の方法。
- 前記島状のパターンがドットパターンである、請求項16に記載の方法。
- 前記工程(f)の後で、かつ、前記工程(h)の前に、前記築堤粘着層が存在する領域を切除する工程をさらに含む、請求項1から請求項17までのいずれか一項に記載の方法。
- 基材シートと、該基材シートの少なくとも一方の面に間欠パターンで設けられた可溶性粘着層と、前記面において前記可溶性粘着層が存在する領域の周囲を取り囲む線状の築堤粘着層とを備えた、請求項1から請求項18までのいずれか一項に記載の方法に用いる、粘着シート。
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| JP2015035551A (ja) | 2013-08-09 | 2015-02-19 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| KR101676916B1 (ko) * | 2014-08-20 | 2016-11-16 | 앰코 테크놀로지 코리아 주식회사 | 반도체 디바이스의 제조 방법 및 이에 따른 반도체 디바이스 |
| KR102499039B1 (ko) * | 2018-11-08 | 2023-02-13 | 삼성전자주식회사 | 캐리어 기판 및 상기 캐리어 기판을 이용한 반도체 패키지의 제조방법 |
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2019
- 2019-11-11 WO PCT/JP2019/044081 patent/WO2020105482A1/ja not_active Ceased
- 2019-11-11 US US17/292,178 patent/US11935865B2/en active Active
- 2019-11-11 JP JP2020558282A patent/JP7289852B2/ja active Active
- 2019-11-11 CN CN201980076414.3A patent/CN113169132B/zh active Active
- 2019-11-11 KR KR1020217010300A patent/KR102667583B1/ko active Active
- 2019-11-19 TW TW108141871A patent/TWI727506B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002206078A (ja) * | 2001-01-11 | 2002-07-26 | Keiwa Inc | 粘着シート |
| WO2018097264A1 (ja) * | 2016-11-28 | 2018-05-31 | 三井金属鉱業株式会社 | 多層配線板の製造方法 |
| WO2018097266A1 (ja) * | 2016-11-28 | 2018-05-31 | 三井金属鉱業株式会社 | 粘着シート及びその剥離方法 |
Also Published As
| Publication number | Publication date |
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| TW202038346A (zh) | 2020-10-16 |
| CN113169132B (zh) | 2024-06-25 |
| CN113169132A (zh) | 2021-07-23 |
| KR20210093852A (ko) | 2021-07-28 |
| US11935865B2 (en) | 2024-03-19 |
| JP7289852B2 (ja) | 2023-06-12 |
| TWI727506B (zh) | 2021-05-11 |
| JPWO2020105482A1 (ja) | 2021-10-14 |
| US20210327848A1 (en) | 2021-10-21 |
| KR102667583B1 (ko) | 2024-05-22 |
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