WO2020104891A1 - 半導体装置、蓄電装置、及び電子機器 - Google Patents

半導体装置、蓄電装置、及び電子機器

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Publication number
WO2020104891A1
WO2020104891A1 PCT/IB2019/059681 IB2019059681W WO2020104891A1 WO 2020104891 A1 WO2020104891 A1 WO 2020104891A1 IB 2019059681 W IB2019059681 W IB 2019059681W WO 2020104891 A1 WO2020104891 A1 WO 2020104891A1
Authority
WO
WIPO (PCT)
Prior art keywords
terminal
insulator
oxide
potential
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2019/059681
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
高橋圭
岡本佑樹
伊藤港
石津貴彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to US17/294,780 priority Critical patent/US11714138B2/en
Priority to JP2020557013A priority patent/JP7325439B2/ja
Publication of WO2020104891A1 publication Critical patent/WO2020104891A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16533—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application
    • G01R19/16538—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies
    • G01R19/16542—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies for batteries
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/36—Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
    • G01R31/396—Acquisition or processing of data for testing or for monitoring individual cells or groups of cells within a battery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/44—Methods for charging or discharging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/48—Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/60—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries including safety or protection arrangements
    • H02J7/61—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries including safety or protection arrangements against overcharge
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/60—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries including safety or protection arrangements
    • H02J7/63—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries including safety or protection arrangements against overdischarge
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/70—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries characterised by the mechanical construction
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/80—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries including monitoring or indicating arrangements
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or discharging batteries or for supplying loads from batteries
    • H02J7/90—Regulation of charging or discharging current or voltage
    • H02J7/933—Regulation of charging or discharging current or voltage the cycle being controlled or terminated in response to electric parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Definitions

  • One embodiment of the present invention relates to a semiconductor device, a power storage device, and an electronic device.
  • one embodiment of the present invention is not limited to the above technical field.
  • the technical field of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method.
  • one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter). Therefore, more specifically, as technical fields of one embodiment of the present invention disclosed in this specification, a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a power storage device, an imaging device, a storage device, a signal processing device, and a processor.
  • Electronic devices, systems, driving methods thereof, manufacturing methods thereof, or inspection methods thereof can be given as examples.
  • a secondary battery included in an electronic device such as an electric vehicle or a notebook personal computer exhibits deterioration phenomena such as a decrease in capacity and an increase in internal resistance by repeating charging and discharging. .. Further, an unexpected accident such as ignition of the battery may occur due to an initial failure of the battery or rough handling of the battery.
  • Patent Document 1 discloses an invention of a battery pack provided with a circuit that protects the temperature of the battery with high accuracy and performs appropriate charge control.
  • a configuration in which a plurality of batteries (one battery may be referred to as a cell, etc.) is electrically connected in series (a configuration in which a plurality of batteries are connected may be referred to as an assembled cell, an assembled battery, or a power supply). .) May be used, and in such a configuration, it is necessary to inspect and / or monitor each of the plurality of batteries.
  • An object of one embodiment of the present invention is to provide a semiconductor device which inspects and / or monitors each battery included in an assembled battery. Alternatively, it is an object of one embodiment of the present invention to provide a novel power storage device including a semiconductor device. Alternatively, it is an object of one embodiment of the present invention to provide a novel electronic device including a power storage device.
  • the problem of one embodiment of the present invention is not limited to the problems listed above.
  • the issues listed above do not preclude the existence of other issues.
  • Other issues are the ones not mentioned in this item, which will be described below.
  • Problems that are not mentioned in this item can be derived from descriptions in the specification, drawings, and the like by those skilled in the art, and can be appropriately extracted from these descriptions.
  • one embodiment of the present invention is to solve at least one of the problems listed above and other problems. Note that according to one embodiment of the present invention, it is not necessary to solve all the problems listed above and other problems.
  • One embodiment of the present invention includes a circuit and a hysteresis comparator, the circuit has a first input terminal, and the hysteresis comparator includes a first reference potential input terminal and a second reference potential input terminal. And a circuit that changes the first reference potential of the first reference potential input terminal and the second reference potential of the second reference potential input terminal according to the first potential input to the first input terminal.
  • a semiconductor device having a function.
  • one embodiment of the present invention includes the semiconductor device of (1) above and a cell, the circuit has a second input terminal, the cell has a function of charging electricity, and The positive electrode terminal is electrically connected to the second input terminal, the negative electrode terminal of the cell is electrically connected to the first input terminal, and the circuit is the first potential of the negative electrode of the cell input to the first input terminal. And a function of generating a third potential according to the second positive potential of the cell input to the second input terminal, and the third potential is input to the input terminal of the hysteresis comparator. It is a power storage device.
  • the circuit includes a first switch to a sixth switch, a first resistance element, a second resistance element, a first capacitance element, and a second capacitance.
  • the first terminal of the third switch is electrically connected to the second terminal of the first capacitive element
  • the first terminal of the fourth switch is electrically connected to the first terminal of the second capacitive element and the second terminal of the second capacitive element.
  • the fifth switch is electrically connected to the reference potential input terminal
  • the first terminal of the fifth switch is electrically connected to the second terminal of the second capacitance element
  • the first terminal of the sixth switch is the second capacitance element.
  • Electrically connected to a second terminal of the third switch and a second terminal of the sixth switch, and the second input terminal of the first input terminal is electrically connected to the second terminal of the third switch.
  • the circuit is electrically connected to the second terminal of the resistance element, and the circuit has a function of holding the first reference potential at the first terminal of the first capacitance element and a function of holding the second reference potential at the first terminal of the second capacitance element.
  • the first switch, the second switch, the fourth switch, and the fifth switch are in the off state, and the third switch and the sixth switch are in the on state.
  • a power storage device having a function of changing by capacitive coupling.
  • At least one of the first switch to the sixth switch has a transistor, and the transistor has a metal oxide in a channel formation region. is there.
  • one embodiment of the present invention includes a circuit and a cell, and the circuit includes a first input terminal, a second input terminal, a first potential holding portion, and a second potential holding portion.
  • the cell has a function of charging electricity, the negative terminal of the cell is electrically connected to the first input terminal, the positive terminal of the cell is electrically connected to the second input terminal, and the circuit is , A function of holding the first reference potential in the first potential holding unit, a function of holding the second reference potential in the second potential holding unit, and a first potential of the negative electrode terminal of the cell input to the first input terminal.
  • the power storage device has a function of varying the first reference potential of the first potential holding unit and the second reference potential of the second potential holding unit.
  • the circuit includes a first switch to a sixth switch, a first resistance element, a second resistance element, a first capacitance element, and a second capacitance.
  • An element, the first terminal of the first resistance element is electrically connected to the first terminal of the second resistance element, and the first potential holding unit is the first terminal of the first switch;
  • the first terminal of the second element is electrically connected to the first terminal of the capacitor, the first terminal of the second switch is electrically connected to the second terminal of the first capacitor, and the first terminal of the third switch is first
  • the second potential holding unit is electrically connected to the second terminal of the capacitive element, the second potential holding unit is electrically connected to the first terminal of the fourth switch and the first terminal of the second capacitive element, and
  • the first terminal is electrically connected to the second terminal of the second capacitance element, the first terminal of the sixth switch is electrically connected to the second terminal of the second capacitance element, and the first input terminal is The second terminal of the
  • At least one of the first switch to the sixth switch has a transistor, and the transistor has a metal oxide in a channel formation region. is there.
  • one embodiment of the present invention is an electronic device including any one of the above power storage devices (2) to (7) and a housing.
  • a semiconductor device is a device utilizing semiconductor characteristics, and means a circuit including a semiconductor element (a transistor, a diode, a photodiode, or the like), a device including the circuit, or the like.
  • a semiconductor element a transistor, a diode, a photodiode, or the like
  • it refers to all devices that can function by utilizing semiconductor characteristics.
  • an integrated circuit, a chip including the integrated circuit, and an electronic component in which the chip is housed in a package are examples of semiconductor devices.
  • a memory device, a display device, a light-emitting device, a lighting device, an electronic device, or the like is a semiconductor device in its own right and may have a semiconductor device.
  • X and Y are connected, a case where X and Y are electrically connected and a case where X and Y are functionally connected are described. And the case where X and Y are directly connected are disclosed in this specification and the like. Therefore, it is not limited to a predetermined connection relation, for example, the connection relation shown in the drawing or the text, and other than the connection relation shown in the drawing or the text is also disclosed in the drawing or the text.
  • X and Y are objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).
  • an element for example, a switch, a transistor, a capacitance element, an inductor, a resistance element, a diode, a display, etc.
  • One or more devices, light emitting devices, loads, etc. can be connected between X and Y.
  • the switch has a function of controlling on / off. That is, the switch is in a conducting state (on state) or a non-conducting state (off state) and has a function of controlling whether or not to pass a current.
  • Examples of the case where X and Y are functionally connected include a circuit (for example, a logic circuit (inverter, NAND circuit, NOR circuit, etc.)) that enables functional connection between X and Y, and signal conversion.
  • Circuits digital-analog conversion circuits, analog-digital conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (power supply circuits (step-up circuits, step-down circuits, etc.), level shifter circuits that change the potential level of signals), voltage sources, current sources , Switching circuits, amplifier circuits (circuits that can increase the signal amplitude or current amount, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation circuits, memory circuits, control circuits, etc. It is possible to connect more than one between and. As an example, even if another circuit is sandwiched between X and Y, if the signal output from X is transmitted to Y, it is assumed that X and Y are functional
  • X and Y, the source (or the first terminal or the like) of the transistor and the drain (or the second terminal or the like) are electrically connected to each other, and X, the source of the transistor (or 1 terminal), the drain of the transistor (or the second terminal, etc.), and Y are electrically connected in this order.
  • the source of the transistor (or the first terminal or the like) is electrically connected to X
  • the drain of the transistor (or the second terminal or the like) is electrically connected to Y
  • X, the source of the transistor ( Alternatively, the first terminal or the like), the drain of the transistor (or the second terminal, or the like), and Y are electrically connected in this order ”.
  • X is electrically connected to Y through a source (or a first terminal or the like) and a drain (or a second terminal or the like) of the transistor, and X, a source (or a first terminal) of the transistor, or the like. Terminal, etc.), the drain of the transistor (or the second terminal, etc.), and Y are provided in this connection order ”.
  • the source (or the first terminal or the like) of the transistor and the drain (or the second terminal or the like) are separated from each other by defining the order of connection in the circuit structure by using the expression method similar to these examples. Apart from this, the technical scope can be determined. Note that these expression methods are examples, and the present invention is not limited to these expression methods.
  • X and Y are objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).
  • a “resistive element” is a circuit element, a wiring, or the like having a resistance value. Therefore, in this specification and the like, a “resistive element” includes a wiring having a resistance value, a transistor in which a current flows between a source and a drain, a diode, a coil, and the like. Therefore, the term “resistive element” can be translated into terms such as “resistance” and "load”, and conversely, the terms “resistor” and “load” can be translated into terms such as “resistive element”.
  • the resistance value can be, for example, preferably 1 m ⁇ or more and 10 ⁇ or less, more preferably 5 m ⁇ or more and 5 ⁇ or less, and further preferably 10 m ⁇ or more and 1 ⁇ or less. Further, for example, it may be 1 ⁇ or more and 1 ⁇ 10 9 ⁇ or less.
  • the term “capacitance element” means a circuit element having a capacitance value, a gate capacitance of a transistor, a parasitic capacitance, or the like. Therefore, in this specification and the like, a “capacitance element” is not only a circuit element including a pair of electrodes and a dielectric contained between the electrodes, but also a parasitic element appearing between wirings. A capacitor, a gate capacitance appearing between one of the source and the drain of the transistor and the gate, and the like are included. Further, the term “capacitance element” can be translated into a term such as “capacity”, and conversely, the term “capacitance” can be translated into a term such as “capacitance element”. The value of the capacitance can be, for example, 0.05 fF or more and 10 pF or less. Further, for example, it may be 1 pF or more and 10 ⁇ F or less.
  • a transistor has three terminals called a gate, a source, and a drain.
  • the gate is a control terminal that controls the conduction state of the transistor.
  • the two terminals functioning as a source or a drain are input / output terminals of the transistor.
  • One of the two input / output terminals serves as a source and the other serves as a drain depending on the conductivity type (n-channel type, p-channel type) of the transistor and the level of potential applied to the three terminals of the transistor. Therefore, in this specification and the like, the terms source and drain can be rephrased.
  • a transistor may have a back gate in addition to the above-described three terminals depending on the structure of the transistor.
  • one of the gate and the back gate of the transistor is referred to as a first gate
  • the other of the gate and the back gate of the transistor is referred to as a second gate.
  • the terms "gate” and “back gate” may be interchangeable with each other. In the case where the transistor has three or more gates, each gate is referred to as a first gate, a second gate, a third gate, or the like in this specification and the like.
  • a node can be restated as a terminal, a wiring, an electrode, a conductive layer, a conductor, an impurity region, or the like, depending on a circuit configuration, a device structure, or the like. Further, terminals, wirings, etc. can be paraphrased as nodes.
  • Voltage refers to a potential difference from a reference potential, and for example, when the reference potential is a ground potential (ground potential), “voltage” can be paraphrased to “potential”. The ground potential does not always mean 0V. Note that the potentials are relative, and the potential applied to the wiring or the like may be changed depending on the reference potential.
  • the "current” is a charge transfer phenomenon (electrical conduction).
  • the description "the electrical conduction of a positively charged body is occurring” means “the electrical conduction of a negatively charged body in the opposite direction.” Is happening. " Therefore, in this specification and the like, the term “current” refers to a charge transfer phenomenon (electric conduction) associated with carrier transfer, unless otherwise specified.
  • the carrier as used herein include electrons, holes, anions, cations, complex ions, and the like, and the carriers are different depending on the system in which current flows (for example, semiconductor, metal, electrolytic solution, in vacuum, etc.). Further, the “direction of current” in the wiring or the like is the direction in which positive carriers move, and is described as the amount of positive current.
  • the direction in which the negative carriers move is opposite to the direction of the current, and is expressed by the negative current amount. Therefore, in this specification and the like, unless otherwise specified as to whether the current is positive or negative (or the direction of the current), a description such as “a current flows from the element A to the element B" is "a current flows from the element B to the element A” or the like. Can be paraphrased into. Further, the description such as “current is input to the element A” can be translated into “current is output from the element A” and the like.
  • the ordinal numbers “first”, “second”, and “third” are added to avoid confusion among constituent elements. Therefore, the number of components is not limited. Moreover, the order of the components is not limited. For example, a component referred to as “first” in one of the embodiments of the present specification and the like is a component referred to as “second” in another embodiment or in the claims. There is also a possibility. Further, for example, the component referred to as “first” in one of the embodiments of the present specification and the like may be omitted in another embodiment or in the claims.
  • the terms “upper” and “lower” do not necessarily mean that the positional relationship of the constituent elements is directly above or below and is in direct contact with each other.
  • the expression “electrode B on insulating layer A” it is not necessary that the electrode B is directly formed on the insulating layer A, and another structure is provided between the insulating layer A and the electrode B. Do not exclude those that contain elements.
  • terms such as “film” and “layer” can be interchanged with each other depending on the situation.
  • the terms “insulating layer” and “insulating film” may be changed to the term “insulator”.
  • Electrode may be used as part of “wiring” and vice versa.
  • the terms “electrode” and “wiring” also include the case where a plurality of “electrodes” and “wirings” are integrally formed.
  • a “terminal” may be used as part of a “wiring” or an "electrode”, and vice versa.
  • the term “terminal” includes a case where a plurality of "electrodes”, “wirings”, “terminals”, etc. are integrally formed. Therefore, for example, the “electrode” can be part of the “wiring” or the “terminal”, and for example, the “terminal” can be part of the “wiring” or the “electrode”.
  • terms such as “wiring”, “signal line”, and “power line” can be interchanged with each other depending on the case or circumstances. For example, it may be possible to change the term “wiring” to the term “signal line”. Further, for example, it may be possible to change the term “wiring” to a term such as “power line”. Also, the reverse is also true, and in some cases it is possible to change the terms such as “signal line” and “power line” to the term “wiring”. In some cases, terms such as “power line” can be changed to terms such as “signal line”. Also, the reverse is also true, and in some cases, terms such as “signal line” can be changed to terms such as “power line”. In addition, the term “potential” applied to the wiring can be changed to the term “signal” or the like depending on the case or circumstances. Also, the reverse is also true, and in some cases, terms such as “signal” can be changed to the term “potential”.
  • the semiconductor impurities mean, for example, components other than the main components constituting the semiconductor layer.
  • an element whose concentration is less than 0.1 atomic% is an impurity. Due to the inclusion of impurities, for example, DOS (Density of States) may be formed in the semiconductor, carrier mobility may be reduced, and crystallinity may be reduced.
  • the impurities that change the characteristics of the semiconductor include, for example, a Group 1 element, a Group 2 element, a Group 13 element, a Group 14 element, a Group 15 element, and a component other than the main component.
  • transition metals and the like in particular hydrogen (also included in water), lithium, sodium, silicon, boron, phosphorus, carbon, nitrogen and the like.
  • the impurities that change the characteristics of the semiconductor include, for example, group 1 elements other than oxygen and hydrogen, group 2 elements, group 13 elements, group 15 elements, and the like. There is.
  • a switch refers to a switch which is in a conductive state (on state) or a non-conductive state (off state) and has a function of controlling whether or not to flow a current.
  • a switch has a function of selecting and switching a path through which current flows.
  • an electrical switch, a mechanical switch, or the like can be used. That is, the switch is not limited to a particular one as long as it can control the current.
  • Examples of electrical switches include transistors (for example, bipolar transistors and MOS transistors), diodes (for example, PN diodes, PIN diodes, Schottky diodes, MIM (Metal Insulator Metal) diodes, and MIS (Metal Insulator Semiconductor) diodes. , A diode-connected transistor, or the like, or a logic circuit in which these are combined. Note that when a transistor is used as a switch, the “conductive state” of the transistor means a state where the source and drain electrodes of the transistor can be regarded as being electrically short-circuited.
  • non-conduction state of a transistor refers to a state in which the source electrode and the drain electrode of the transistor can be regarded as being electrically disconnected. Note that when the transistor is operated as a simple switch, the polarity (conductivity type) of the transistor is not particularly limited.
  • a mechanical switch there is a switch using MEMS (micro electro mechanical system) technology.
  • the switch has a mechanically movable electrode, and the movement of the electrode controls conduction and non-conduction.
  • parallel means a state in which two straight lines are arranged at an angle of ⁇ 10 ° or more and 10 ° or less. Therefore, a case of -5 ° or more and 5 ° or less is also included.
  • substantially parallel or “substantially parallel” means a state in which two straight lines are arranged at an angle of ⁇ 30 ° or more and 30 ° or less.
  • vertical means a state in which two straight lines are arranged at an angle of 80 ° or more and 100 ° or less. Therefore, the case of 85 ° or more and 95 ° or less is also included.
  • substantially vertical or “generally vertical” means a state in which two straight lines are arranged at an angle of 60 ° or more and 120 ° or less.
  • a semiconductor device which inspects and / or monitors each battery included in an assembled battery can be provided.
  • a novel power storage device including a semiconductor device can be provided.
  • a novel electronic device including a power storage device can be provided.
  • the effects of one aspect of the present invention are not limited to the effects listed above.
  • the effects listed above do not prevent the existence of other effects.
  • the other effects are the effects which are not mentioned in this item, which will be described below.
  • the effects not mentioned in this item can be derived from the description such as the specification or the drawings by those skilled in the art, and can be appropriately extracted from these descriptions.
  • one embodiment of the present invention has at least one of the effects listed above and other effects. Therefore, one embodiment of the present invention may not have the effects listed above in some cases.
  • FIG. 1 is a block diagram showing an example of a semiconductor device.
  • FIG. 2 is a circuit diagram showing an example of a semiconductor device.
  • 3A and 3B are timing charts illustrating an operation example of the semiconductor device.
  • FIG. 4 is a circuit diagram showing an example of a semiconductor device.
  • FIG. 5 is a circuit diagram showing an example of a semiconductor device.
  • FIG. 6 is a circuit diagram showing an example of a semiconductor device.
  • FIG. 7 is a schematic sectional view illustrating the configuration of the semiconductor device.
  • FIG. 8 is a schematic sectional view illustrating the configuration of the semiconductor device.
  • 9A, 9B, and 9C are schematic cross-sectional views illustrating the structure of the semiconductor device.
  • 10A, 10B, and 10C are a top view and a perspective view showing a structural example of a capacitor.
  • 11A, 11B, and 11C are a top view and a perspective view showing a structural example of a capacitor.
  • 12A, 12B, 12C, and 12D are perspective views showing an example of a semiconductor wafer and electronic components.
  • 13A, 13B, 13C, and 13D are perspective views illustrating an example of a power storage device.
  • 14A, 14B, and 14C are perspective views each illustrating an example of a power storage device.
  • 15A, 15B, 15C, 15D, 15E, 15F, 15G, 15H, and 15I are perspective views illustrating an example of a product.
  • a metal oxide is a metal oxide in a broad sense. Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors), oxide semiconductors (Oxide Semiconductor or simply OS), and the like. For example, when a metal oxide is used for the active layer of a transistor, the metal oxide may be referred to as an oxide semiconductor. That is, when a metal oxide can form a channel formation region of a transistor having at least one of an amplification function, a rectification function, and a switching function, the metal oxide is referred to as a metal oxide semiconductor. You can In addition, the term “OS transistor” can be rephrased as a transistor including a metal oxide or an oxide semiconductor.
  • metal oxides having nitrogen may be collectively referred to as metal oxides. Further, the metal oxide containing nitrogen may be referred to as a metal oxynitride.
  • the contents described in one embodiment are different from the contents described in the embodiment (may be a part of the contents) and one or more different embodiments. It is possible to apply, combine, replace, or the like with respect to at least one of the contents described in the form (or a part of the contents).
  • a diagram (or part of it) described in one embodiment is different from another portion of the diagram, another diagram (or part) described in the embodiment, and one or a plurality of different views. More drawings can be configured by combining at least one drawing with the drawings (which may be a part) described in the embodiments.
  • a hysteresis comparator may be used to detect overcharging or overdischarging of the cell.
  • the overcharge state is set, and the high-level side threshold voltage of the hysteresis comparator (sometimes referred to as high-level reference potential).
  • the voltage V1 may be set, and the desired voltage V2 may be set as the low-level threshold voltage of the hysteresis comparator (may be referred to as a low-level reference potential).
  • the voltage V2 can be 4.0V, and more preferably 4.1V.
  • the output potential of the hysteresis comparator changes from the high level potential to the low level potential (or the low level potential). Potential to a high level potential).
  • a detection signal By detecting the transition of the output potential (hereinafter sometimes referred to as a detection signal) by a control circuit or the like provided separately, the cell can be detected as an overcharged state, and the cell is charged. You can stop. After that, when the cell discharges, and the voltage of the cell falls below 4.1V, the output potential of the hysteresis comparator should transit from the low level potential to the high level potential (or from the high level potential to the low level potential). become.
  • the cell When the voltage of the cell is less than 4.1V, the cell is not in the overcharged state and thus can be charged. That is, by detecting the transition of the output potential by a separately provided control circuit or the like, the cell can be detected as being in a chargeable state, and the cell can be charged.
  • the over-discharge of the cell when the cell voltage is lower than the voltage V2, the over-discharge state is set, and the voltage V2 is set as the low side threshold voltage of the hysteresis comparator.
  • a desired voltage V1 may be set as the high level side threshold voltage.
  • the voltage V1 when the voltage V2 is 2.5V, the voltage V1 can be 3.2V, and more preferably 3.0V.
  • the output potential of the hysteresis comparator changes from the high level potential to the low level potential (or low level potential).
  • the cell By detecting the transition of the output potential (hereinafter, sometimes referred to as a detection signal) by a control circuit provided separately, the cell can be detected as an overdischarged state, and the discharge of the cell is stopped. can do. After that, when the voltage of the cell exceeds 3.0 V when the cell is charged, the output potential of the hysteresis comparator may transit from the low level potential to the high level potential (or from the high level potential to the low level potential). become. When the voltage of the cell is higher than 3.0V, the cell is not in the over-discharged state, and thus the cell is in the dischargeable state. That is, by detecting the transition of the output potential by a separately provided control circuit or the like, the cell can be detected as a dischargeable state, and the cell can be discharged.
  • a detection signal By detecting the transition of the output potential (hereinafter, sometimes referred to as a detection signal) by a control circuit provided separately, the cell can be detected as an overdischarged state,
  • the high-level side threshold voltage and the low-level side threshold voltage of the hysteresis comparator are set for one cell, and the detection signal output from the output terminal of the hysteresis comparator is acquired. , It is possible to know whether overcharge or overdischarge has occurred in the cell. As described above, it is preferable to set the high-level side threshold voltage and the low-level side threshold voltage of the hysteresis comparator according to the overcharge state or the overdischarge state, whichever is desired to be detected. ..
  • the high-level side threshold voltage and the low voltage of the hysteresis comparator electrically connected for each cell are low. It is necessary to set the level side threshold voltage.
  • One aspect of the present invention has been made in view of the above, and in a battery pack, a hysteresis comparator for each of a plurality of cells, a high-level side threshold voltage, and a low-level side of the hysteresis comparator, which is different for each cell. And a circuit for setting a threshold voltage.
  • FIG. 1 illustrates an example of a semiconductor device of one embodiment of the present invention.
  • the semiconductor device 100 has a plurality of circuits SHLV and a plurality of hysteresis comparators HCMP.
  • the semiconductor device 100 has a function of detecting overcharge or overdischarge for each of the plurality of cells CE included in the assembled battery BAT.
  • a plurality of cells CE are electrically connected in series in the assembled battery BAT.
  • the number of circuits SHLV can be the same as the number of cells CE included in the assembled battery BAT, for example. Further, the number of hysteresis comparators HCMP can be the same as the number of cells CE included in the assembled battery BAT, for example.
  • the circuit SHLV has an input terminal SI1, an input terminal SI2, and output terminals SO1 to SO3.
  • the hysteresis comparator HCMP has an input terminal IT, a reference potential input terminal RT1, a reference potential input terminal RT2, an output terminal OT, and an output terminal OTB.
  • the positive terminal of the cell CE is electrically connected to the input terminal SI1 of the circuit SHLV, and the negative terminal of the cell CE is electrically connected to the input terminal SI2 of the circuit SHLV.
  • the output terminal SO1 of the circuit SHLV is electrically connected to the reference potential input terminal RT1 of the hysteresis comparator HCMP
  • the output terminal SO2 of the circuit SHLV is electrically connected to the reference potential input terminal RT2 of the hysteresis comparator HCMP
  • the output terminal SO3 of the circuit SHLV is electrically connected to the input terminal IT of the hysteresis comparator HCMP.
  • the circuit SHLV has a function of acquiring the voltage of the cell CE from the input terminal SI1 and the input terminal SI2 and outputting a potential corresponding to the voltage to the output terminal SO3, and a hysteresis comparator according to the potential of the negative terminal of the cell CE. It has a function of setting the high-level side threshold voltage and the low-level side threshold voltage and outputting them to the output terminal SO1 and the output terminal SO2.
  • the hysteresis comparator HCMP inputs the potential input to the reference potential input terminal RT1 as the high level side threshold voltage and the potential input to the reference potential input terminal RT2 as the low level side threshold voltage to the input terminal IT. It has a function of comparing the generated voltage with the high-level side threshold voltage and the low-level side threshold voltage and outputting the comparison result to the output terminal OT and the output terminal OTB.
  • the output terminal OT and the output terminal OTB of the hysteresis comparator HCMP function as terminals that output an abnormality detection signal when the semiconductor device 100 detects overcharge or overdischarge in the cell CE.
  • the circuit SHLV is electrically connected to the wiring VRHE, the wiring VRLE, and the wiring GNDE.
  • the wiring VRHE, the wiring VRLE, and the wiring GNDE function as wirings that give a constant voltage, for example. The specific voltage will be described later.
  • FIG. 2 shows a specific configuration example of the circuit SHLV and the hysteresis comparator HCMP as a part of the semiconductor device 100.
  • the hysteresis comparator HCMP has a comparator CMP1, a comparator CMP2, a NAND circuit LCNA1, and a NAND circuit LCNA2.
  • the + side terminal of the comparator CMP1 is electrically connected to the reference potential input terminal RT1
  • the ⁇ side terminal of the comparator CMP1 is electrically connected to the input terminal IT
  • the output terminal of the comparator CMP1 is the first terminal of the NAND circuit LCNA1. It is electrically connected to one input terminal.
  • the + side terminal of the comparator CMP2 is electrically connected to the input terminal IT
  • the ⁇ side terminal of the comparator CMP2 is electrically connected to the reference potential input terminal RT2
  • the output terminal of the comparator CMP2 is the first terminal of the NAND circuit LCNA2. It is electrically connected to one input terminal.
  • the second input terminal of the NAND circuit LCNA1 is electrically connected to the output terminal of the NAND circuit LCNA2 and the output terminal OTB.
  • the second input terminal of the NAND circuit LCNA2 is electrically connected to the output terminal of the NAND circuit LCNA1 and the output terminal OT.
  • the hysteresis comparator HCMP sets the potentials input to the reference potential input terminal RT1 and the reference potential input terminal RT2 to the high level side threshold voltage and the low level side threshold voltage, and inputs them to the input terminal IT. It has a function of comparing input potentials with their threshold voltages and outputting potentials from the output terminals OT and OTB according to the comparison result. Specifically, for example, when the first potential is input to the reference potential input terminal RT1 and the second potential is input to the reference potential input terminal RT2, a potential higher than the first potential (hereinafter referred to as a potential higher than the first potential is input to the input terminal IT.
  • V H V H
  • V L the second potential
  • the hysteresis comparator HCMP may be configured as a CMOS (Complementary MOS) circuit or may be configured as a unipolar circuit (a circuit configured by only transistors of the same polarity).
  • CMOS Complementary MOS
  • unipolar circuit a circuit configured by only transistors of the same polarity
  • the circuit SHLV includes switches SW1 to SW6, a resistance element R1, a resistance element R2, a capacitance element C1, and a capacitance element C2.
  • each of the switches SW1 to SW6 is turned on when a high-level potential is applied to the control terminal and is turned off when a low-level potential is applied to the control terminal.
  • the resistance element R1 and the resistance element R2 are circuit elements for dividing the voltage of the cell CE. Therefore, in order to divide the voltage of the cell CE, circuit elements other than the resistance element R1 and the resistance element R2 may be used in some cases. For example, a diode may be used instead of the resistance element R1 and the resistance element R2.
  • the first terminal of the switch SW1 is electrically connected to the wiring VRHE, and the second terminal of the switch SW1 is electrically connected to the first terminal of the capacitive element C1 and the output terminal SO1.
  • the first terminal of the switch SW2 is electrically connected to the wiring GNDE, and the second terminal of the switch SW2 is electrically connected to the second terminal of the capacitive element C1 and the first terminal of the switch SW3. ..
  • the first terminal of the switch SW4 is electrically connected to the wiring VRLE, and the second terminal of the switch SW4 is electrically connected to the first terminal of the capacitive element C2 and the output terminal SO2.
  • a first terminal of the switch SW5 is electrically connected to the wiring GNDE, and a second terminal of the switch SW5 is electrically connected to a second terminal of the capacitive element C2 and a first terminal of the switch SW6. ..
  • the second terminal of the switch SW3 and the second terminal of the switch SW6 are electrically connected to the input terminal SI2.
  • the control terminals of the switches SW1, SW2, SW4, and SW5 are electrically connected to the wiring SHE, and the control terminals of the switches SW3 and SW6 are electrically connected to the wiring SHEB. There is.
  • an electrical connection point between the second terminal of the switch SW1 and the first terminal of the capacitive element C1 is illustrated as a node ND1, and the second terminal of the switch SW4 and the first terminal of the capacitive element C2.
  • the node ND1 and the node ND2 are electrically connected to the first terminals of the capacitor C1 and the capacitor C2, respectively, and thus may be referred to as potential holding portions.
  • the capacitance values of the capacitor C1 and the capacitor C2 may be 0.01 fF or more and 100 pF or less, more preferably 0.05 fF or more and 10 pF or less, and further preferably 0.1 fF or more and 1 pF or less.
  • first terminal of the resistance element R1 is electrically connected to the input terminal SI1
  • second terminal of the resistance element R1 is electrically connected to the output terminal SO3 and the first terminal of the resistance element R2.
  • the second terminal of the resistance element R2 is electrically connected to the input terminal SI2.
  • the wiring VRHE, the wiring VRLE, and the wiring GNDE function as wirings that give a constant voltage, for example.
  • the constant voltage provided by the wiring VRHE can be, for example, a high-level side threshold voltage input to the reference potential input terminal RT1 of the hysteresis comparator HCMP
  • the constant voltage provided by the wiring VRLE can be, for example, It can be set to the low-level side threshold voltage input to the reference potential input terminal RT2 of the hysteresis comparator HCMP.
  • the constant voltage applied by the wiring GNDE can be, for example, a ground potential (GND), a voltage lower than the ground potential, or the like.
  • the high-level side threshold voltage is preferably higher than the low-level side threshold voltage and the constant voltage given by the wiring GNDE, and the low-level side threshold voltage is higher than the constant voltage given by the wiring GNDE.
  • a generation circuit may be electrically connected to each of the wiring VRHE, the wiring VRLE, and the wiring GNDE (not shown), and each generation circuit may generate a predetermined constant voltage.
  • the wiring SHE functions as a wiring that gives a constant voltage (sometimes called a signal) to the control terminals of the switches SW1, SW2, SW4, and SW5, as an example. That is, the wiring SHE functions as a wiring for switching the switch SW1, the switch SW2, the switch SW4, and the switch SW5 between the on state and the off state.
  • the wiring SHEB functions as a wiring that gives a constant voltage (may be referred to as a signal) to the control terminals of the switches SW3 and SW6, for example. That is, the wiring SHEB functions as a wiring for switching the switch SW3 and the switch SW6 between on and off states.
  • the signal given by the wiring SHEB may be, for example, an inverted signal of the signal given by the wiring SHE, or may be a signal that does not depend on the signal given by the wiring SHE.
  • 3A and 3B show the voltage input to the input terminal IT, the output terminal OT, the voltage output from the output terminal OTB, the potentials of the wiring SHE and the wiring SHEB, and the potentials of the node ND1 and the node ND2.
  • 3 is a timing chart showing the fluctuation of 3A is a timing chart in the case where the cell CE is in the overcharged state and the semiconductor device 100A outputs the abnormality detection signal
  • FIG. 3B is in the overdischarged state in the cell CE and the semiconductor device 100A.
  • 6 is a timing chart in the case of outputting an abnormality detection signal. Note that high described in FIGS. 3A and 3B indicates a high-level potential, and low indicates a low-level potential.
  • the potential V ini input to the input terminal IT becomes (V + CE + V ⁇ CE ) / 2, and, for example, the resistance value is When R 1 and R 2 are 0.1 ⁇ and 0.2 ⁇ , respectively, the potential V ini becomes V + CE ⁇ 2/3 + V ⁇ CE / 3.
  • the constant voltage applied by the wiring VRHE that is, the overcharge voltage
  • the constant voltage applied by the wiring VRLE is V ref1
  • the constant voltage applied by the wiring GNDE is set to the ground potential (GND).
  • V OVC is a voltage higher than V ref1 and GND
  • V ref1 is a voltage higher than GND.
  • the high-level side threshold voltage input to the reference potential input terminal RT1 and the low-level side threshold voltage input to the reference potential input terminal RT2 are undefined. To do. As a result, the potentials output from the output terminal OT and the output terminal OTB cannot be determined. Therefore, in the timing chart of FIG. 3A, the potentials of the output terminal OT and the output terminal OTB and the potentials of the node ND1 and the node ND2 before time T1 are shown by hatching.
  • the potential V ini is input to the input terminal IT. Note that in this operation example, the potential V ini is higher than V OVC .
  • a high-level potential is input to the wiring SHE and a low-level potential is input to the wiring SHEB.
  • the high-level potential is input to the control terminals of the switches SW1, SW2, SW4, and SW5, and the switches SW1, SW2, SW4, and SW5 are turned on.
  • low-level potentials are input to the control terminals of the switches SW3 and SW6, and the switches SW3 and SW6 are turned off.
  • the switch SW1 When the switch SW1 is turned on, the first terminal of the capacitor C1 (node ND1) and the wiring VRHE are brought into conduction, so that the potential of the first terminal of the capacitor C1 (node ND1) is V It becomes OVC . At the same time, V OVC is input to the reference potential input terminal RT1 of the hysteresis comparator HCMP.
  • the switch SW2 When the switch SW2 is turned on, the second terminal of the capacitor C1 is electrically connected to the wiring GNDE, and the switch SW3 is turned off, so that the second terminal of the capacitor C1 and the cell are connected. Since the CE and the negative electrode are not electrically connected to each other, the potential of the second terminal of the capacitive element C1 becomes GND.
  • the switch SW4 When the switch SW4 is turned on, the first terminal (node ND2) of the capacitor C2 and the wiring VRLE are brought into conduction, so that the potential of the first terminal (node ND2) of the capacitor C2 becomes lower. , V ref1 . At the same time, V ref1 is input to the reference potential input terminal RT2 of the hysteresis comparator HCMP.
  • the switch SW5 When the switch SW5 is turned on, the second terminal of the capacitor C2 is electrically connected to the wiring GNDE, and the switch SW6 is turned off, so that the second terminal of the capacitor C2 and the cell are connected. Since there is no electrical connection between the negative electrode of CE and the negative terminal of CE, the potential of the second terminal of the capacitive element C2 becomes GND.
  • V ini is input to the input terminal of the hysteresis comparator HCMP
  • V OVC is input to the reference potential input terminal RT1
  • V ref1 is input to the reference potential input terminal RT2.
  • the hysteresis comparator HCMP compares the potential V ini of the input terminal with V OVC that is the high-level threshold voltage and V ref1 that is the low-level threshold voltage, and outputs according to the comparison result.
  • the potential is output from the terminal OT and the output terminal OTB.
  • V ini since V ini has a higher potential than V OVC , a high level potential is output from the output terminal OT and a low level potential is output from the output terminal OTB.
  • the low-level potential is input to the wiring SHE.
  • low-level potentials are input to the control terminals of the switches SW1, SW2, SW4, and SW5, and the switches SW1, SW2, SW4, and SW5 are turned off.
  • the switch SW1 When the switch SW1 is turned off, the node ND1 and the wiring VRHE are brought out of conduction. Further, since the power supply potential is not applied to the reference potential input terminal RT1 from the inside of the hysteresis comparator HCMP, the node ND1 is in an electrically floating state. Further, as a result, V OVC which is the potential of the node ND1 is held by the capacitor C1. Further, after the voltage V OVC which is the potential of the node ND1 is held, the generation circuit of V OVC applied to the wiring VRHE may be stopped. As a result, the power consumption of the V OVC generation circuit can be reduced.
  • the switch SW4 is turned off, so that the node ND2 and the wiring VRLE are brought out of conduction. Further, since the power supply potential is not applied to the reference potential input terminal RT2 from the inside of the hysteresis comparator HCMP, the node ND2 also becomes electrically floating. In addition, thereby, the potential V ref1 of the node ND2 is held by the capacitor C2. Furthermore, after holding the V ref1 is the potential of the node ND2, the generation circuit of V ref1 has given to the wiring VRLE may be stopped. As a result, the power consumption of the V ref1 generation circuit can be reduced.
  • a high-level potential is input to the wiring SHEB from time T3 to time T4.
  • the high-level potentials are input to the control terminals of the switches SW3 and SW6, and the switches SW3 and SW6 are turned on.
  • the switch SW3 When the switch SW3 is turned on, the second terminal of the capacitor C1 and the negative electrode of the cell CE are brought into conduction, so that the potential of the second terminal of the capacitor C1 becomes V- CE .
  • the switch SW2 is off and the node ND1 is electrically floating, so that when the potential of the second terminal of the capacitor C1 changes from GND to V- CE , capacitive coupling of the capacitor C1 occurs. Accordingly, the potential of the node ND1 also changes. Note that the amount of change in potential due to capacitive coupling is determined in accordance with the capacitive coupling coefficient, but in this specification and the like, the potential of the second terminal of the capacitive element C1 has changed from GND to V- CE for the sake of simple explanation. At this time, the potential of the node ND1 is changed to V OVC + V ⁇ CE . That is, this change in potential corresponds to the case where the capacitive coupling coefficient determined according to the capacitive element C1 and the peripheral circuit elements is
  • the switch SW6 When the switch SW6 is turned on, the second terminal of the capacitor C2 and the negative electrode of the cell CE are brought into conduction, so that the potential of the second terminal of the capacitor C2 becomes V- CE .
  • the switch SW5 since the switch SW5 is off and the node ND2 is electrically floating, when the potential of the second terminal of the capacitor C2 changes from GND to V- CE , capacitive coupling of the capacitor C2 occurs. Accordingly, the potential of the node ND2 also changes.
  • the capacitive coupling coefficient determined according to the capacitive element C2 and the peripheral circuit elements is set to 1 in the same manner as above, and the potential of the second terminal of the capacitive element C2 is changed from GND to V- CE . At that time, the potential of the node ND2 is changed to V ref1 + V ⁇ CE .
  • V OVC + V ⁇ CE is input to the reference potential input terminal RT1 of the hysteresis comparator HCMP, and V ref1 + V ⁇ CE is input to the reference potential input terminal RT2. That is, each of the high level side threshold voltage and the low level side threshold voltage of the hysteresis comparator HCMP becomes higher by V- CE .
  • V ini input to the input terminal IT has a potential equal to or lower than V ref1 + V ⁇ CE
  • a low level potential is output from the output terminal OT and a high level potential is output from the output terminal OTB. ..
  • the cell CE is charged.
  • the voltage V + CE -V -CE cell CE is increased, the potential input to the input terminal IT is gradually increased.
  • V + CE and / or V- CE may change.
  • V- CE1 changes, the potentials of the nodes ND1 and ND2 also change due to capacitive coupling of the capacitor C1 and the capacitor C2, so that the high-level threshold voltage of the hysteresis comparator HCMP and the low voltage
  • the level side threshold voltage also changes. That is, the semiconductor device shown in FIG. 2 optimally adjusts the high-level side threshold voltage and the low-level side threshold voltage of the hysteresis comparator HCMP according to the change in V- CE of the cell CE due to charging. can do.
  • V- CE does not change after time T4. Therefore, the potentials of the node ND1 and the node ND2 after time T4 are always V OVC + V ⁇ CE and V ref1 + V ⁇ CE , respectively.
  • the detection signal output from the output terminal OT transits from the low level potential to the high level potential. Therefore, by using the semiconductor device of FIG. 2, when the cell CE is charged, the transition from the low level potential to the high level potential of the detection signal output from the output terminal OT of the hysteresis comparator HCMP is acquired, It can be detected that the CE is overcharged.
  • the overcharged state of the cell CE may be detected by acquiring the transition from the high level potential to the low level potential of the detection signal output from the output terminal OT.
  • V ini input to the input terminal IT when V ini input to the input terminal IT is higher than V ref1 + V ⁇ CE , V ini is on the low level side from time T3 to time T4. Since it does not become lower than the threshold voltage, the output terminal OT and the output terminal OTB of the hysteresis comparator HCMP respectively output a high level potential and a low level potential. At this time, since the cell CE is in the overcharged state or the state in which the remaining amount of the battery is appropriate, it may be preferable to discharge the cell CE without charging it. For the operation of discharging, the description of the operation of the timing chart of FIG. 3B described below is referred to.
  • the constant voltage given by the wiring VRHE is V ref2
  • the constant voltage given by the wiring VRLE that is, the overdischarge voltage
  • the constant voltage applied by the wiring GNDE is set to the ground potential (GND).
  • V OVD is a voltage higher than V ref2 and GND
  • V ref2 is a voltage higher than GND.
  • the operation of the semiconductor device before time T6 and between time T6 and time T8 is the same as that of the semiconductor device before time T1 and between time T1 and time T3 in the timing chart of FIG. 3A. The same operation can be performed. Therefore, for the operation of the semiconductor device from time T6 to time T8, the description of the operation of the semiconductor device before time T1 and from time T1 to time T3 is referred to.
  • the potential V ini input to the input terminal IT is assumed to be a sufficiently high potential from time T6 to time T8. Therefore, a high level potential and a low level potential are output from the output terminal OT and the output terminal OTB of the hysteresis comparator HCMP, respectively.
  • the high-level potential is input to the wiring SHEB.
  • the high-level potentials are input to the control terminals of the switches SW3 and SW6, and the switches SW3 and SW6 are turned on.
  • V ref2 + V ⁇ CE is input to the reference potential input terminal RT1 of the hysteresis comparator HCMP, and V OVD + V ⁇ CE is input to the reference potential input terminal RT2. That is, each of the high level side threshold voltage and the low level side threshold voltage of the hysteresis comparator HCMP becomes higher by V- CE .
  • V ini input to the input terminal IT is set to a potential higher than V ref2 + V ⁇ CE , a high level potential is output from the output terminal OT and a low level potential is output from the output terminal OTB.
  • the cell CE is discharged.
  • the voltage V + CE -V -CE cell CE is decreased gradually decreases the potential input to the input terminal IT.
  • the discharge of the cell CE may change V + CE and / or V ⁇ CE .
  • V- CE changes, the potentials of the node ND1 and the node ND2 also change due to the capacitive coupling of the capacitive elements C1 and C2, as in the charging operation of the cell CE, and the high level of the hysteresis comparator HCMP.
  • the level side threshold voltage and the low level side threshold voltage also change. That is, in the semiconductor device shown in FIG. 2, the high-level side threshold voltage and the low-level side threshold voltage of the hysteresis comparator HCMP are changed according to the change of V- CE of the cell CE even during discharging. , Can be adjusted optimally.
  • V- CE does not change after time T9. Therefore, the potentials of the node ND1 and the node ND2 after time T9 are always V ref2 + V ⁇ CE and V OVD + V ⁇ CE , respectively.
  • the detection signal output from the output terminal OT transits from the high level potential to the low level potential. Therefore, by using the semiconductor device of FIG. 2, when the cell CE is discharged, the transition from the high level potential to the low level potential of the detection signal output from the output terminal OT of the hysteresis comparator HCMP is acquired, It can be detected that the CE is excessively discharged.
  • the detection of the over-discharged state of the cell CE may be performed by acquiring the transition from the low level potential to the high level potential of the detection signal output from the output terminal OT.
  • the operation of the semiconductor device 100A which is one embodiment of the present invention is not limited to the above operation example. In some cases, the operation example of the above-described semiconductor device 100A may be appropriately changed depending on the situation.
  • One embodiment of the present invention is not limited to the semiconductor device 100A illustrated in FIG.
  • the configuration of the semiconductor device 100A may be changed depending on the situation.
  • transistors can be applied as the switches SW1 to SW6 included in the circuit SHLV.
  • a semiconductor device 100B shown in FIG. 4 has a configuration in which the switches SW1 to SW6 of the semiconductor device 100A of FIG. 2 are replaced with transistors M1 to M6 which are n-channel transistors.
  • the circuit SHLV may be configured as a CMOS circuit instead of a unipolar circuit.
  • each of the transistor M3 and the transistor M6 of the semiconductor device 100B in FIG. 4 may be replaced with a p-channel transistor M3p and a transistor M6p. Since the semiconductor device 100C has a configuration in which the wiring SHEB is not provided, the area of the circuit SHLV can be reduced as compared with the semiconductor device 100A. Further, for example, an analog switch may be applied as each of the switches SW1 to SW6 of the semiconductor device 100A (not shown).
  • the transistors M1 to M6 and the transistors included in the hysteresis comparator HCMP are OS transistors.
  • a transistor whose off-state current is desirably low, specifically, a transistor having a function of holding charge accumulated in a capacitor is preferably an OS transistor.
  • the OS transistor when an OS transistor is used as the transistor, the OS transistor preferably has the structure of the transistor described in Embodiment 2.
  • the metal oxide contained in the channel formation region is an oxide containing at least one of indium, an element M (the element M includes aluminum, gallium, yttrium, tin, and the like) and zinc. More preferably.
  • the off-state current of an OS transistor in which the metal oxide is included in the channel formation region is 10 aA (1 ⁇ 10 ⁇ 17 A) or less per 1 ⁇ m channel width, preferably 1 aA (1 ⁇ 10 ⁇ 18 A) per 1 ⁇ m channel width.
  • the OS transistor has a low carrier concentration of metal oxide, the off-state current remains low even when the temperature of the OS transistor changes. For example, even when the temperature of the OS transistor is 150 ° C., the off-state current can be 100 zA per 1 ⁇ m of the channel width.
  • some or all of the transistors M1 to M6 and the transistors included in the hysteresis comparator HCMP are, for example, transistors including silicon in a channel formation region (hereinafter referred to as Si transistors). Yes).
  • Si transistors for example, single crystal silicon, hydrogenated amorphous silicon, microcrystalline silicon, polycrystalline silicon, or the like can be used.
  • the transistors other than the OS transistor and the Si transistor include, for example, a transistor having a semiconductor such as Ge as an active layer, a transistor having a compound semiconductor such as ZnSe, CdS, GaAs, InP, GaN, and SiGe as an active layer, and a carbon nanotube.
  • a transistor including an active layer, a transistor including an organic semiconductor as an active layer, or the like can be used.
  • an n-type semiconductor can be formed using a metal oxide containing indium (eg, In oxide) or a metal oxide containing zinc (eg, Zn oxide) in the metal oxide of the semiconductor layer of the OS transistor.
  • a metal oxide containing indium (eg, In oxide) or a metal oxide containing zinc (eg, Zn oxide) in the metal oxide of the semiconductor layer of the OS transistor it may be difficult to manufacture a p-type semiconductor in terms of mobility and reliability. Therefore, in the semiconductor device illustrated in FIG. 4, an OS transistor may be applied as an n-channel transistor included in the circuit SHLV, the hysteresis comparator HCMP, or the like, and a Si transistor may be applied as a p-channel transistor.
  • the semiconductor device 100B in FIG. 4 may have a configuration in which the transistors M1 to M6 included in the circuit SHLV are provided with back gates as in the semiconductor device 100D in FIG.
  • FIG. 6 illustrates a structure in which the back gates are provided in all of the transistors M1 to M6, the back gate may be provided in only a part of the transistors M1 to M6. Further, a back gate may be provided in the transistor included in the hysteresis comparator HCMP.
  • the connection destination of the back gate of the transistor is selected depending on the desired operation or characteristics of the transistor at the design stage. You can decide For example, the back gate of the transistor can be electrically connected to the gate of the transistor. By electrically connecting the gate and the back gate of the transistor, the amount of current flowing when the transistor is on can be increased.
  • a wiring for electrically connecting to an external circuit is provided in a back gate of a transistor, a potential is applied to the back gate of the transistor by the external circuit, a threshold voltage is increased, and off current is increased. May be smaller. With such a structure, the off-state current of the transistor can be reduced by an external circuit.
  • the transistors M1 to M6 having the back gate for example, the above OS transistors can be used.
  • the back gates may be provided in transistors included in another configuration. That is, the transistor described in this specification and the like can be a transistor including a back gate.
  • each cell included in the assembled battery can share the constant voltage given from the wiring VRHE and the wiring VRLE. It is possible to set the high-level side threshold voltage and the low-level side threshold voltage of the hysteresis comparator HCMP corresponding to each cell.
  • the semiconductor device illustrated in FIG. 7 includes a transistor 300, a transistor 500, and a capacitor 600.
  • 9A is a cross-sectional view of the transistor 500 in the channel length direction
  • FIG. 9B is a cross-sectional view of the transistor 500 in the channel width direction
  • FIG. 9C is a cross-sectional view of the transistor 300 in the channel width direction.
  • the transistor 500 is a transistor (OS transistor) having a metal oxide in a channel formation region. Since the transistor 500 has a small off-state current, by using the transistor 500 for a semiconductor device, in particular, the transistors M1 to M6 of the circuit SHLV, data written can be held for a long time. That is, the frequency of refresh operation is low or the refresh operation is not necessary, so that power consumption of the semiconductor device can be reduced.
  • the semiconductor device described in this embodiment includes a transistor 300, a transistor 500, and a capacitor 600 as illustrated in FIG. 7.
  • the transistor 500 is provided above the transistor 300
  • the capacitor 600 is provided above the transistor 300 and the transistor 500.
  • the capacitor 600 can be the semiconductor device 100, the capacitor C1, the capacitor C2, or the like in the semiconductor devices 100A to 100D.
  • the transistor 300 is provided over the substrate 311, and includes a conductor 316, an insulator 315, a semiconductor region 313 which is part of the substrate 311, a low-resistance region 314a which functions as a source region or a drain region, and a low-resistance region 314b. .. Note that the transistor 300 can be applied to, for example, the transistor in the above embodiment.
  • a semiconductor substrate for example, a single crystal substrate or a silicon substrate
  • the substrate 311 it is preferable to use a semiconductor substrate (for example, a single crystal substrate or a silicon substrate) as the substrate 311.
  • the transistor 300 As shown in FIG. 9C, in the transistor 300, the upper surface and the side surface in the channel width direction of the semiconductor region 313 are covered with the conductor 316 with the insulator 315 interposed therebetween. As described above, when the transistor 300 is a Fin type, the effective channel width is increased, so that the on-state characteristics of the transistor 300 can be improved. Further, since the electric field contribution of the gate electrode can be increased, the off characteristics of the transistor 300 can be improved.
  • the transistor 300 may be either a p-channel type or an n-channel type.
  • a region of the semiconductor region 313 in which a channel is formed, a region in the vicinity thereof, a low-resistance region 314a serving as a source region or a drain region, a low-resistance region 314b, or the like preferably contains a semiconductor such as a silicon-based semiconductor. It preferably includes crystalline silicon. Alternatively, it may be formed of a material having Ge (germanium), SiGe (silicon germanium), GaAs (gallium arsenide), GaAlAs (gallium aluminum arsenide), or the like. A configuration may be used in which silicon is used, in which the effective mass is controlled by applying stress to the crystal lattice and changing the lattice spacing. Alternatively, the transistor 300 may be a HEMT (High Electron Mobility Transistor) by using GaAs and GaAlAs.
  • HEMT High Electron Mobility Transistor
  • the low-resistance region 314a and the low-resistance region 314b impart an n-type conductivity imparting element such as arsenic or phosphorus or a p-type conductivity imparting boron, in addition to the semiconductor material applied to the semiconductor region 313. Including the element to do.
  • the conductor 316 functioning as a gate electrode is a semiconductor material such as silicon, a metal material, or an alloy containing an element imparting n-type conductivity such as arsenic or phosphorus, or an element imparting p-type conductivity such as boron.
  • a material or a conductive material such as a metal oxide material can be used.
  • the threshold voltage of the transistor can be adjusted by selecting the material of the conductor. Specifically, it is preferable to use a material such as titanium nitride or tantalum nitride for the conductor. Further, in order to achieve both conductivity and embedding properties, it is preferable to use a metal material such as tungsten or aluminum as a laminate for the conductor, and it is particularly preferable to use tungsten in terms of heat resistance.
  • the transistor 300 illustrated in FIG. 7 is an example, and the structure thereof is not limited, and an appropriate transistor may be used depending on a circuit configuration or a driving method.
  • the transistor 300 may have a structure similar to that of the transistor 500 including an oxide semiconductor as illustrated in FIG. Note that details of the transistor 500 will be described later.
  • An insulator 320, an insulator 322, an insulator 324, and an insulator 326 are sequentially stacked so as to cover the transistor 300.
  • the insulator 320, the insulator 322, the insulator 324, and the insulator 326 for example, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum nitride oxide, aluminum nitride, or the like is used. Good.
  • silicon oxynitride refers to a material whose content of oxygen is higher than that of nitrogen
  • silicon oxynitride is a material whose content of nitrogen is higher than that of oxygen.
  • aluminum oxynitride refers to a material having a higher oxygen content than nitrogen as its composition
  • aluminum oxynitride as a material having a higher nitrogen content than oxygen as its composition. Indicates.
  • the insulator 322 may have a function as a flattening film for flattening a step caused by the transistor 300 and the like provided below the insulator 322.
  • the upper surface of the insulator 322 may be flattened by a flattening treatment using a chemical mechanical polishing (CMP) method or the like in order to improve flatness.
  • CMP chemical mechanical polishing
  • the insulator 324 it is preferable to use a film having a barrier property such that hydrogen and impurities do not diffuse from the substrate 311, the transistor 300, or the like to a region where the transistor 500 is provided.
  • a film having a barrier property against hydrogen for example, silicon nitride formed by a CVD method can be used.
  • silicon nitride formed by a CVD method when hydrogen is diffused into a semiconductor element including an oxide semiconductor, such as the transistor 500, characteristics of the semiconductor element may be deteriorated in some cases. Therefore, it is preferable to use a film which suppresses diffusion of hydrogen between the transistor 500 and the transistor 300.
  • the film that suppresses hydrogen diffusion is a film in which the amount of released hydrogen is small.
  • the desorption amount of hydrogen can be analyzed using, for example, a thermal desorption gas analysis method (TDS).
  • TDS thermal desorption gas analysis method
  • the desorption amount of hydrogen in the insulator 324 is calculated by converting the desorption amount converted into hydrogen atoms into the area of the insulator 324 when the surface temperature of the film is in the range of 50 ° C to 500 ° C. Therefore, it may be 10 ⁇ 10 15 atoms / cm 2 or less, preferably 5 ⁇ 10 15 atoms / cm 2 or less.
  • the insulator 326 preferably has a lower dielectric constant than the insulator 324.
  • the dielectric constant of the insulator 326 is preferably less than 4, and more preferably less than 3.
  • the relative dielectric constant of the insulator 326 is preferably 0.7 times or less, and more preferably 0.6 times or less that of the insulator 324.
  • a conductor 328, a conductor 330, and the like which are connected to the capacitor 600 or the transistor 500 are embedded.
  • the conductor 328 and the conductor 330 have a function as a plug or a wiring.
  • the conductor having a function as a plug or a wiring may have a plurality of structures collectively given the same reference numeral. In this specification and the like, the wiring and the plug connected to the wiring may be integrated. That is, part of the conductor may function as a wiring, and part of the conductor may function as a plug.
  • a conductive material such as a metal material, an alloy material, a metal nitride material, or a metal oxide material is used as a single layer or a laminated layer. be able to. It is preferable to use a high melting point material such as tungsten or molybdenum, which has both heat resistance and conductivity, and it is preferable to use tungsten. Alternatively, it is preferably formed of a low resistance conductive material such as aluminum or copper. Wiring resistance can be reduced by using a low-resistance conductive material.
  • a wiring layer may be provided on the insulator 326 and the conductor 330.
  • an insulator 350, an insulator 352, and an insulator 354 are sequentially stacked and provided.
  • a conductor 356 is formed over the insulator 350, the insulator 352, and the insulator 354.
  • the conductor 356 has a function as a plug connected to the transistor 300 or a wiring. Note that the conductor 356 can be provided using a material similar to that of the conductor 328 and the conductor 330.
  • the insulator 350 is preferably an insulator having a barrier property against hydrogen, like the insulator 324.
  • the conductor 356 preferably contains a conductor having a barrier property against hydrogen.
  • a conductor having a hydrogen barrier property is formed in an opening portion of the insulator 350 having a hydrogen barrier property.
  • tantalum nitride or the like may be used as the conductor having a barrier property against hydrogen.
  • tantalum nitride and tungsten having high conductivity diffusion of hydrogen from the transistor 300 can be suppressed while maintaining conductivity as a wiring.
  • the tantalum nitride layer having a barrier property against hydrogen be in contact with the insulator 350 having a barrier property against hydrogen.
  • a wiring layer may be provided on the insulator 354 and the conductor 356.
  • an insulator 360, an insulator 362, and an insulator 364 are sequentially stacked and provided.
  • a conductor 366 is formed over the insulator 360, the insulator 362, and the insulator 364.
  • the conductor 366 has a function as a plug or a wiring. Note that the conductor 366 can be provided using a material similar to that of the conductor 328 and the conductor 330.
  • the insulator 360 is preferably an insulator having a barrier property against hydrogen, like the insulator 324.
  • the conductor 366 preferably contains a conductor having a barrier property against hydrogen.
  • a conductor having a hydrogen barrier property is formed in the opening of the insulator 360 having a hydrogen barrier property.
  • a wiring layer may be provided on the insulator 364 and the conductor 366.
  • an insulator 370, an insulator 372, and an insulator 374 are sequentially stacked and provided.
  • a conductor 376 is formed over the insulator 370, the insulator 372, and the insulator 374.
  • the conductor 376 has a function as a plug or a wiring. Note that the conductor 376 can be provided using a material similar to that of the conductor 328 and the conductor 330.
  • the insulator 370 is preferably an insulator having a barrier property against hydrogen, like the insulator 324.
  • the conductor 376 preferably includes a conductor having a barrier property against hydrogen.
  • a conductor having a hydrogen barrier property is formed in the opening of the insulator 370 having a hydrogen barrier property.
  • a wiring layer may be provided on the insulator 374 and the conductor 376.
  • an insulator 380, an insulator 382, and an insulator 384 are sequentially stacked and provided.
  • a conductor 386 is formed over the insulator 380, the insulator 382, and the insulator 384.
  • the conductor 386 has a function as a plug or a wiring. Note that the conductor 386 can be provided using a material similar to that of the conductor 328 and the conductor 330.
  • the insulator 380 it is preferable to use an insulator having a barrier property against hydrogen, like the insulator 324.
  • the conductor 386 preferably contains a conductor having a barrier property against hydrogen.
  • a conductor having a barrier property against hydrogen is formed in the opening portion of the insulator 380 having a barrier property against hydrogen.
  • the semiconductor device has been described above, the semiconductor device according to this embodiment It is not limited to this.
  • the number of wiring layers similar to the wiring layer including the conductor 356 may be three or less, or the number of wiring layers similar to the wiring layer including the conductor 356 may be five or more.
  • An insulator 510, an insulator 512, an insulator 514, and an insulator 516 are sequentially stacked on the insulator 384. Any of the insulator 510, the insulator 512, the insulator 514, and the insulator 516 is preferably formed using a substance having a barrier property against oxygen and hydrogen.
  • insulator 510 and the insulator 514 for example, a film having a barrier property such that hydrogen and impurities do not diffuse from the substrate 311 or a region where the transistor 300 is provided to a region where the transistor 500 is provided is used. Is preferred. Therefore, a material similar to that of the insulator 324 can be used.
  • silicon nitride formed by a CVD method can be used as an example of a film having a barrier property against hydrogen.
  • silicon nitride formed by a CVD method when hydrogen is diffused into a semiconductor element including an oxide semiconductor, such as the transistor 500, characteristics of the semiconductor element may be deteriorated in some cases. Therefore, it is preferable to use a film which suppresses diffusion of hydrogen between the transistor 500 and the transistor 300.
  • the film that suppresses hydrogen diffusion is a film in which the amount of released hydrogen is small.
  • a metal oxide such as aluminum oxide, hafnium oxide, or tantalum oxide is preferably used for the insulator 510 and the insulator 514.
  • aluminum oxide has a high blocking effect that does not allow the film to permeate both oxygen and impurities such as hydrogen and moisture that cause fluctuations in the electrical characteristics of the transistor. Therefore, aluminum oxide can prevent impurities such as hydrogen and moisture from entering the transistor 500 during and after the manufacturing process of the transistor. Further, release of oxygen from the oxide included in the transistor 500 can be suppressed. Therefore, it is suitable to be used as a protective film for the transistor 500.
  • the same material as that of the insulator 320 can be used for the insulator 512 and the insulator 516. Further, by applying a material having a relatively low dielectric constant to these insulators, it is possible to reduce the parasitic capacitance generated between the wirings.
  • a silicon oxide film, a silicon oxynitride film, or the like can be used as the insulator 512 and the insulator 516.
  • a conductor 518, a conductor (eg, a conductor 503) included in the transistor 500, and the like are embedded in the insulator 510, the insulator 512, the insulator 514, and the insulator 516.
  • the conductor 518 has a function of a plug connected to the capacitor 600 or the transistor 300, or a wiring.
  • the conductor 518 can be provided using a material similar to that of the conductor 328 and the conductor 330.
  • the conductor 510 in a region which is in contact with the insulator 510 and the insulator 514 be a conductor having a barrier property against oxygen, hydrogen, and water.
  • the transistor 300 and the transistor 500 can be separated by a layer having a barrier property against oxygen, hydrogen, and water, and diffusion of hydrogen from the transistor 300 to the transistor 500 can be suppressed.
  • the transistor 500 is provided above the insulator 516.
  • a transistor 500 includes a conductor 503 arranged so as to be embedded in an insulator 514 and an insulator 516 and an insulator 520 arranged over the insulator 516 and the conductor 503.
  • a conductor 560 that is formed.
  • an insulator 544 is preferably provided between the insulator 580 and the oxide 530a, the oxide 530b, the conductor 542a, and the conductor 542b.
  • the conductor 560 includes a conductor 560a provided inside the insulator 550 and a conductor 560b provided so as to be embedded inside the conductor 560a. It is preferable to have.
  • an insulator 574 is preferably provided over the insulator 580, the conductor 560, and the insulator 550.
  • the oxide 530a, the oxide 530b, and the oxide 530c may be collectively referred to as the oxide 530.
  • the transistor 500 has a structure in which three layers of the oxide 530a, the oxide 530b, and the oxide 530c are stacked in the region where the channel is formed and in the vicinity thereof, the present invention is not limited to this. Not a thing. For example, a single layer of the oxide 530b, a two-layer structure of the oxide 530b and the oxide 530a, a two-layer structure of the oxide 530b and the oxide 530c, or a stacked structure of four or more layers may be provided. Further, in the transistor 500, the conductor 560 is shown as a stacked structure of two layers, but the present invention is not limited to this. For example, the conductor 560 may have a single-layer structure or a stacked structure including three or more layers. Further, the transistor 500 illustrated in FIGS. 7 and 9A is an example, and the structure thereof is not limited, and an appropriate transistor may be used depending on a circuit configuration or a driving method.
  • the conductor 560 functions as a gate electrode of the transistor, and the conductors 542a and 542b function as a source electrode or a drain electrode, respectively.
  • the conductor 560 is formed so as to be embedded in the opening of the insulator 580 and the region between the conductors 542a and 542b.
  • the arrangement of the conductor 560, the conductor 542a, and the conductor 542b is selected in a self-aligned manner with respect to the opening of the insulator 580. That is, in the transistor 500, the gate electrode can be arranged between the source electrode and the drain electrode in a self-aligned manner. Therefore, the conductor 560 can be formed without providing a positioning margin, so that the area occupied by the transistor 500 can be reduced. As a result, miniaturization and high integration of the semiconductor device can be achieved.
  • the conductor 560 is formed in a region between the conductor 542a and the conductor 542b in a self-aligned manner, the conductor 560 does not have a region overlapping with the conductor 542a or the conductor 542b. Accordingly, parasitic capacitance formed between the conductor 560 and the conductors 542a and 542b can be reduced. Therefore, the switching speed of the transistor 500 can be improved and high frequency characteristics can be provided.
  • the conductor 560 may function as a first gate (also referred to as a top gate) electrode. Further, the conductor 503 may function as a second gate (also referred to as a bottom gate) electrode. In that case, the threshold voltage of the transistor 500 can be controlled by changing the potential applied to the conductor 503 independently of the potential applied to the conductor 560 and without changing the potential. In particular, by applying a negative potential to the conductor 503, the threshold voltage of the transistor 500 can be higher than 0 V and the off-state current can be reduced. Therefore, applying a negative potential to the conductor 503 can reduce the drain current when the potential applied to the conductor 560 is 0 V, as compared to the case where no potential is applied.
  • the conductor 503 is arranged so as to overlap with the oxide 530 and the conductor 560. Thus, when a potential is applied to the conductor 560 and the conductor 503, the electric field generated from the conductor 560 and the electric field generated from the conductor 503 are connected to cover a channel formation region formed in the oxide 530.
  • a structure of a transistor which electrically surrounds a channel formation region by an electric field of the first gate electrode and the second gate electrode is referred to as a surrounded channel (S-channel) structure.
  • the conductor 503 has the same structure as the conductor 518, and the conductor 503a is formed in contact with the inner walls of the openings of the insulator 514 and the insulator 516, and the conductor 503b is formed further inside.
  • the transistor 500 has a structure in which the conductor 503a and the conductor 503b are stacked, the present invention is not limited to this.
  • the conductor 503 may have a single-layer structure or a stacked structure including three or more layers.
  • the conductor 503a it is preferable to use a conductive material having a function of suppressing diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, and copper atoms (the above impurities are difficult to permeate).
  • a conductive material having a function of suppressing diffusion of oxygen eg, at least one of oxygen atoms and oxygen molecules
  • the function of suppressing the diffusion of impurities or oxygen is the function of suppressing the diffusion of any one or all of the impurities or oxygen.
  • the conductor 503a since the conductor 503a has a function of suppressing diffusion of oxygen, it is possible to prevent the conductor 503b from being oxidized and being reduced in conductivity.
  • the conductor 503 also has a function of wiring
  • the conductor 503b be formed using a conductive material having high conductivity, which contains tungsten, copper, or aluminum as its main component.
  • the conductor 505 is not necessarily provided.
  • the conductor 503b is illustrated as a single layer, it may have a laminated structure, for example, a laminate of titanium or titanium nitride and the above conductive material.
  • the insulator 520, the insulator 522, and the insulator 524 have a function as a second gate insulating film.
  • the insulator 524 which is in contact with the oxide 530, it is preferable to use an insulator containing more oxygen than that satisfying the stoichiometric composition. That is, it is preferable that the insulator 524 be formed with an excess oxygen region. By providing such an insulator containing excess oxygen in contact with the oxide 530, oxygen vacancies in the oxide 530 can be reduced and the reliability of the transistor 500 can be improved.
  • an oxide material in which part of oxygen is released by heating is preferably used as the insulator having an excess oxygen region.
  • the oxide that desorbs oxygen by heating means that the amount of desorbed oxygen in terms of oxygen atoms is 1.0 ⁇ 10 18 atoms / cm 3 or more, preferably 1 or more by TDS (Thermal Desorption Spectroscopy) analysis. It is an oxide film having a concentration of 0.0 ⁇ 10 19 atoms / cm 3 or more, more preferably 2.0 ⁇ 10 19 atoms / cm 3 or more, or 3.0 ⁇ 10 20 atoms / cm 3 or more.
  • the surface temperature of the film during the TDS analysis is preferably 100 ° C. or higher and 700 ° C. or lower, or 100 ° C. or higher and 400 ° C. or lower.
  • any one or more of heat treatment, microwave treatment, and RF treatment may be performed by contacting the oxide 530 with the insulator having the excess oxygen region.
  • water or hydrogen in the oxide 530 can be removed.
  • reactions occur which bonds VoH is disconnected, when other words happening reaction of "V O H ⁇ V O + H", can be dehydrogenated.
  • Part of the hydrogen generated at this time may be combined with oxygen and converted into H 2 O, which is removed from the oxide 530 or the insulator in the vicinity of the oxide 530.
  • part of hydrogen may be diffused or captured (also referred to as gettering) in the conductors 542a and 542b.
  • a device having a power source for generating high-density plasma or a device having a power source for applying RF to the substrate side for the microwave treatment.
  • a gas containing oxygen and using high-density plasma high-density oxygen radicals can be generated, and by applying RF to the substrate side, oxygen radicals generated by high-density plasma can be generated.
  • the pressure may be 133 Pa or higher, preferably 200 Pa or higher, more preferably 400 Pa or higher.
  • oxygen and argon are used, and the oxygen flow rate ratio (O 2 / (O 2 + Ar)) is 50% or less, preferably 10% or more 30 % Or less is recommended.
  • heat treatment is preferably performed with the surface of the oxide 530 exposed.
  • the heat treatment may be performed at 100 ° C to 450 ° C inclusive, more preferably 350 ° C to 400 ° C inclusive, for example.
  • the heat treatment is performed in an atmosphere of a nitrogen gas or an inert gas, or an atmosphere containing an oxidizing gas at 10 ppm or more, 1% or more, or 10% or more.
  • the heat treatment is preferably performed in an oxygen atmosphere. Accordingly, oxygen can be supplied to the oxide 530 to reduce oxygen vacancies (V 2 O 3 ).
  • the heat treatment may be performed under reduced pressure.
  • the heat treatment may be performed in an atmosphere containing an oxidizing gas in an amount of 10 ppm or higher, 1% or higher, or 10% or higher in order to supplement desorbed oxygen after the heat treatment is performed in a nitrogen gas or inert gas atmosphere.
  • heat treatment may be performed in an atmosphere containing an oxidizing gas in an amount of 10 ppm or more, 1% or more, or 10% or more, and then continuously performed in an atmosphere of nitrogen gas or an inert gas.
  • the insulator 522 when the insulator 524 has an excess oxygen region, the insulator 522 preferably has a function of suppressing diffusion of oxygen (eg, oxygen atoms, oxygen molecules) (the oxygen is less likely to permeate).
  • oxygen eg, oxygen atoms, oxygen molecules
  • the insulator 522 has a function of suppressing diffusion of oxygen and impurities, oxygen contained in the oxide 530 does not diffuse to the insulator 520 side, which is preferable. Further, the conductor 503 can be prevented from reacting with the insulator 524 and the oxygen contained in the oxide 530.
  • the insulator 522 is, for example, aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate), tantalum oxide, zirconium oxide, lead zirconate titanate (PZT), strontium titanate (SrTiO 3 ), or It is preferable to use an insulator containing a so-called high-k material such as (Ba, Sr) TiO 3 (BST) in a single layer or a laminated layer. As miniaturization and higher integration of transistors progress, problems such as leakage current may occur due to thinning of the gate insulating film. By using a high-k material for the insulator functioning as a gate insulating film, it is possible to reduce the gate potential during transistor operation while maintaining the physical film thickness.
  • a so-called high-k material such as (Ba, Sr) TiO 3 (BST)
  • an insulator containing an oxide of one or both of aluminum and hafnium which is an insulating material having a function of suppressing diffusion of impurities and oxygen (the oxygen is difficult to permeate).
  • the insulator containing one or both oxides of aluminum and hafnium it is preferable to use aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate), or the like.
  • the insulator 522 is formed using such a material, the insulator 522 suppresses release of oxygen from the oxide 530 and mixture of impurities such as hydrogen from the peripheral portion of the transistor 500 into the oxide 530. Functions as a layer.
  • aluminum oxide, bismuth oxide, germanium oxide, niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, or zirconium oxide may be added to these insulators.
  • these insulators may be nitrided. Silicon oxide, silicon oxynitride, or silicon nitride may be stacked on the above insulator and used.
  • the insulator 520 is preferably thermally stable.
  • silicon oxide and silicon oxynitride are preferable because they are thermally stable.
  • an insulator 520 having a stacked structure which is thermally stable and has a high relative dielectric constant can be obtained.
  • the insulator 520, the insulator 522, and the insulator 524 are illustrated as the second gate insulating film having a stacked-layer structure of three layers.
  • the insulating film may have a single layer, two layers, or a laminated structure of four or more layers.
  • the laminated structure is not limited to the same material, and may be a laminated structure made of different materials.
  • the oxide 530 including the channel formation region is preferably a metal oxide functioning as an oxide semiconductor.
  • an In-M-Zn oxide (the element M is aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium).
  • hafnium, tantalum, tungsten, magnesium, and the like are preferably used.
  • the In-M-Zn oxide that can be applied as the oxide 530 is preferably CAAC-OS (C-Axis Aligned Crystalline Oxide Semiconductor) or CAC-OS (Cloud-Aligned Composite Oxide Semiconductor).
  • CAAC-OS C-Axis Aligned Crystalline Oxide Semiconductor
  • CAC-OS Cloud-Aligned Composite Oxide Semiconductor
  • an In—Ga oxide or an In—Zn oxide may be used as the oxide 530.
  • a metal oxide having a low carrier concentration for the transistor 500 it is preferable to use a metal oxide having a low carrier concentration for the transistor 500.
  • the concentration of impurities in the metal oxide may be lowered and the density of defect states may be lowered.
  • low impurity concentration and low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic.
  • the impurities in the metal oxide include, for example, hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon and the like.
  • hydrogen contained in a metal oxide reacts with oxygen bonded to a metal atom to be water, which may cause oxygen vacancies in the metal oxide.
  • oxygen vacancies and hydrogen combine to form a V O H.
  • V O H acts as a donor, sometimes electrons serving as carriers are generated.
  • part of hydrogen may be bonded to oxygen which is bonded to a metal atom to generate an electron which is a carrier. Therefore, a transistor including a metal oxide containing a large amount of hydrogen is likely to have normally-on characteristics.
  • the metal oxide easily moves due to stress such as heat and an electric field; therefore, when a large amount of hydrogen is contained in the metal oxide, reliability of the transistor might be deteriorated.
  • the highly purified intrinsic or substantially highly purified intrinsic it is preferable that the highly purified intrinsic or substantially highly purified intrinsic.
  • the impurities such as hydrogen (dehydration, may be described as dehydrogenation.)
  • oxygenation treatment it is important to supply oxygen to the metal oxide to fill oxygen vacancies (sometimes referred to as oxygenation treatment).
  • the metal oxide impurities is sufficiently reduced such V O H By using the channel formation region of the transistor, it is possible to have stable electrical characteristics.
  • the metal oxide may be evaluated not by the donor concentration but by the carrier concentration. Therefore, in this specification and the like, the carrier concentration which is assumed to be a state where no electric field is applied may be used as the parameter of the metal oxide, instead of the donor concentration. That is, the “carrier concentration” described in this specification and the like can be called the “donor concentration” in some cases.
  • the hydrogen concentration obtained by secondary ion mass spectrometry is less than 1 ⁇ 10 20 atoms / cm 3 , preferably 1 ⁇ 10 19 atoms / cm 3. It is less than 3 , more preferably less than 5 ⁇ 10 18 atoms / cm 3 , and even more preferably less than 1 ⁇ 10 18 atoms / cm 3 .
  • the metal oxide has a high bandgap, is an intrinsic (also referred to as I-type) semiconductor, or is a substantially intrinsic semiconductor and has a channel formation region.
  • the carrier concentration of the metal oxide is preferably less than 1 ⁇ 10 18 cm ⁇ 3 , more preferably less than 1 ⁇ 10 17 cm ⁇ 3 , and further preferably less than 1 ⁇ 10 16 cm ⁇ 3. It is preferably less than 1 ⁇ 10 13 cm ⁇ 3 , more preferably less than 1 ⁇ 10 12 cm ⁇ 3 .
  • the lower limit of the carrier concentration of the metal oxide in the channel formation region is not particularly limited, but can be set to, for example, 1 ⁇ 10 ⁇ 9 cm ⁇ 3 .
  • oxygen in the oxide 530 is diffused to the conductor 542a and the conductor 542b,
  • the 542a and the conductor 542b may be oxidized. Oxidation of the conductors 542a and 542b is likely to reduce the conductivity of the conductors 542a and 542b. Note that diffusion of oxygen in the oxide 530 to the conductor 542a and the conductor 542b can be restated as absorption of oxygen in the oxide 530 by the conductor 542a and the conductor 542b.
  • the oxide 530 diffuses into the conductors 542a and 542b, so that different layers are formed between the conductor 542a and the oxide 530b and between the conductor 542b and the oxide 530b. May be done. Since the different layer contains more oxygen than the conductor 542a and the conductor 542b, it is estimated that the different layer has an insulating property.
  • the three-layer structure of the conductor 542a or the conductor 542b, the different layer, and the oxide 530b can be regarded as a three-layer structure including metal-insulator-semiconductor, and MIS (Metal-Insulator-). It may be called a "Semiconductor structure" or a diode junction structure mainly composed of a MIS structure.
  • the different layer is not limited to being formed between the conductor 542a and the conductor 542b and the oxide 530b; for example, the different layer may be formed between the conductor 542a and the conductor 542b and the oxide 530c. In some cases, or in some cases, between the conductor 542a and the conductor 542b and the oxide 530b, and between the conductor 542a and the conductor 542b and the oxide 530c.
  • the metal oxide functioning as a channel formation region in the oxide 530 preferably has a bandgap of 2 eV or more, preferably 2.5 eV or more.
  • the oxide 530 has the oxide 530a below the oxide 530b, diffusion of impurities into the oxide 530b from a structure formed below the oxide 530a can be suppressed. Further, by including the oxide 530c over the oxide 530b, diffusion of impurities from the structure formed above the oxide 530c into the oxide 530b can be suppressed.
  • the oxide 530 preferably has a laminated structure of a plurality of oxide layers in which the atomic ratio of each metal atom is different.
  • the atomic ratio of the element M in the constituent elements is higher than the atomic ratio of the element M in the constituent elements in the metal oxide used for the oxide 530b.
  • the atomic ratio of the element M to In is preferably higher than the atomic ratio of the element M to In in the metal oxide used for the oxide 530b.
  • the atomic ratio of In to the element M is preferably higher than the atomic ratio of In to the element M in the metal oxide used for the oxide 530a.
  • a metal oxide that can be used for the oxide 530a or the oxide 530b can be used.
  • the energy at the bottom of the conduction band of the oxide 530a and the oxide 530c be higher than the energy at the bottom of the conduction band of the oxide 530b.
  • the electron affinity of the oxide 530a and the oxide 530c be smaller than the electron affinity of the oxide 530b.
  • the energy level at the bottom of the conduction band changes gently at the junction of the oxide 530a, the oxide 530b, and the oxide 530c.
  • the energy levels at the bottoms of the conduction bands at the junctions of the oxide 530a, the oxide 530b, and the oxide 530c are continuously changed or continuously joined.
  • the density of defect states in the mixed layer formed at the interface between the oxide 530a and the oxide 530b and the interface between the oxide 530b and the oxide 530c may be low.
  • the oxide 530a and the oxide 530b, and the oxide 530b and the oxide 530c have a common element other than oxygen (as a main component), so that a mixed layer with low density of defect states is formed.
  • the oxide 530b is an In—Ga—Zn oxide, In—Ga—Zn oxide, Ga—Zn oxide, gallium oxide, or the like may be used as the oxide 530a and the oxide 530c.
  • the main carrier path is the oxide 530b.
  • the oxide 530a and the oxide 530c have the above structure, the density of defect states in the interface between the oxide 530a and the oxide 530b and the interface between the oxide 530b and the oxide 530c can be reduced. Therefore, the influence of interface scattering on carrier conduction is reduced and the transistor 500 can obtain high on-state current.
  • the conductor 542a and the conductor 542b which function as a source electrode and a drain electrode are provided over the oxide 530b.
  • Examples of the conductor 542a and the conductor 542b include aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium, beryllium, indium, and ruthenium. It is preferable to use a metal element selected from iridium, strontium, and lanthanum, an alloy containing the above metal element as a component, an alloy in which the above metal elements are combined, or the like.
  • tantalum nitride, titanium nitride, tungsten, nitride containing titanium and aluminum, nitride containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxide containing strontium and ruthenium, oxide containing lanthanum and nickel, or the like is used.
  • tantalum nitride, titanium nitride, nitride containing titanium and aluminum, nitride containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxide containing strontium and ruthenium, and oxide containing lanthanum and nickel are difficult to oxidize. It is preferable because it is a conductive material or a material that maintains conductivity even when absorbing oxygen. Further, a metal nitride film such as tantalum nitride is preferable because it has a barrier property against hydrogen or oxygen.
  • the conductor 542a and the conductor 542b are shown as a single layer structure, but may be a laminated structure of two or more layers.
  • a tantalum nitride film and a tungsten film may be stacked.
  • a titanium film and an aluminum film may be stacked.
  • a two-layer structure in which an aluminum film is stacked over a tungsten film a two-layer structure in which a copper film is stacked over a copper-magnesium-aluminum alloy film, a two-layer structure in which a copper film is stacked over a titanium film, and a tungsten film is formed over the tungsten film.
  • a two-layer structure in which copper films are laminated may be used.
  • a titanium film or a titanium nitride film a three-layer structure in which an aluminum film or a copper film is stacked over the titanium film or the titanium nitride film, and a titanium film or a titanium nitride film is further formed thereover, a molybdenum film, or
  • a molybdenum nitride film and an aluminum film or a copper film are stacked over the molybdenum film or the molybdenum nitride film, and a molybdenum film or a molybdenum nitride film is formed thereover.
  • a transparent conductive material containing indium oxide, tin oxide, or zinc oxide may be used.
  • regions 543a and 543b may be formed as low resistance regions at the interface between the oxide 530 and the conductor 542a (conductor 542b) and in the vicinity thereof.
  • the region 543a functions as one of the source region and the drain region
  • the region 543b functions as the other of the source region and the drain region.
  • a channel formation region is formed in a region between the region 543a and the region 543b.
  • the oxygen concentration in the region 543a (region 543b) may be reduced.
  • a metal compound layer containing a metal contained in the conductor 542a (conductor 542b) and a component of the oxide 530 may be formed in the region 543a (region 543b). In such a case, the carrier concentration in the region 543a (region 543b) increases, and the region 543a (region 543b) becomes a low resistance region.
  • the insulator 544 is provided so as to cover the conductors 542a and 542b and suppresses oxidation of the conductors 542a and 542b. At this time, the insulator 544 may be provided so as to cover a side surface of the oxide 530 and be in contact with the insulator 524.
  • the insulator 544 one or two or more kinds of metal oxides selected from hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, neodymium, lanthanum, magnesium, and the like are included. Can be used. Alternatively, as the insulator 544, silicon nitride oxide, silicon nitride, or the like can be used.
  • the insulator 544 an oxide containing one or both of aluminum and hafnium, such as aluminum oxide, hafnium oxide, aluminum, or an oxide containing hafnium (hafnium aluminate).
  • hafnium aluminate has higher heat resistance than a hafnium oxide film. Therefore, crystallization is less likely to occur in heat treatment in a later step, which is preferable.
  • the insulator 544 is not an essential component if the conductors 542a and 542b are materials having oxidation resistance or if the conductivity does not significantly decrease even when oxygen is absorbed. It may be appropriately designed depending on the desired transistor characteristics.
  • impurities such as water and hydrogen contained in the insulator 580 can be suppressed from diffusing into the oxide 530b through the oxide 530c and the insulator 550.
  • oxidation of the conductor 560 due to excess oxygen in the insulator 580 can be suppressed.
  • the insulator 550 functions as a first gate insulating film.
  • the insulator 550 is preferably arranged in contact with the inside (top surface and side surface) of the oxide 530c.
  • the insulator 550 is preferably formed using an insulator which contains excess oxygen and releases oxygen by heating.
  • silicon oxide containing excess oxygen, silicon oxynitride, silicon nitride oxide, silicon nitride, silicon oxide added with fluorine, silicon oxide added with carbon, carbon oxide added with carbon, and nitrogen are added.
  • the silicon oxide which it has can be used.
  • silicon oxide and silicon oxynitride are preferable because they are stable to heat.
  • oxygen is effectively supplied from the insulator 550 to the channel formation region of the oxide 530b through the oxide 530c. Can be supplied. Further, like the insulator 524, the concentration of impurities such as water or hydrogen in the insulator 550 is preferably reduced.
  • the thickness of the insulator 550 is preferably 1 nm or more and 20 nm or less.
  • a metal oxide may be provided between the insulator 550 and the conductor 560 in order to efficiently supply the excess oxygen included in the insulator 550 to the oxide 530.
  • the metal oxide preferably suppresses oxygen diffusion from the insulator 550 to the conductor 560.
  • diffusion of excess oxygen from the insulator 550 to the conductor 560 is suppressed. That is, a decrease in the amount of excess oxygen supplied to the oxide 530 can be suppressed.
  • oxidation of the conductor 560 due to excess oxygen can be suppressed.
  • a material that can be used for the insulator 544 may be used.
  • the insulator 550 may have a stacked structure like the second gate insulating film.
  • an insulator functioning as a gate insulating film is formed using a high-k material and a thermal insulator.
  • a layered structure of a stable material it is possible to reduce the gate potential during transistor operation while maintaining the physical film thickness. Further, it is possible to obtain a laminated structure that is thermally stable and has a high relative dielectric constant.
  • the conductor 560 functioning as the first gate electrode is shown as a two-layer structure in FIGS. 9A and 9B, it may have a single-layer structure or a stacked structure of three or more layers.
  • the conductor 560a has a function of suppressing diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitric oxide molecules (N 2 O, NO, NO 2, etc.), and copper atoms. It is preferable to use materials. Alternatively, a conductive material having a function of suppressing diffusion of oxygen (eg, at least one of oxygen atoms and oxygen molecules) is preferably used. Since the conductor 560a has a function of suppressing diffusion of oxygen, oxygen contained in the insulator 550 can prevent oxidation of the conductor 560b and decrease in conductivity.
  • impurities such as hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, nitric oxide molecules (N 2 O, NO, NO 2, etc.), and copper atoms. It is preferable to use materials. Alternatively, a conductive material having a function of suppressing diffusion of oxygen (eg, at least one of oxygen atoms and oxygen molecules) is preferably used. Since the
  • the conductive material having a function of suppressing diffusion of oxygen for example, tantalum, tantalum nitride, ruthenium, ruthenium oxide, or the like is preferably used.
  • an oxide semiconductor which can be used for the oxide 530 can be used as the conductor 560a. In that case, by forming a film of the conductor 560b by a sputtering method, the electric resistance value of the conductor 560a can be reduced to be a conductor. This can be called an OC (Oxide Conductor) electrode.
  • the conductor 560b is preferably made of a conductive material containing tungsten, copper, or aluminum as a main component. Since the conductor 560b also functions as a wiring, it is preferable to use a conductor having high conductivity. For example, a conductive material containing tungsten, copper, or aluminum as its main component can be used.
  • the conductor 560b may have a stacked structure, for example, a stacked structure of titanium or titanium nitride and the above conductive material.
  • the insulator 580 is provided on the conductor 542a and the conductor 542b through the insulator 544.
  • the insulator 580 preferably has an excess oxygen region.
  • silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, fluorine-added silicon oxide, carbon-added silicon oxide, carbon, and nitrogen-added silicon oxide a voided oxide
  • silicon oxide and silicon oxynitride are preferable because they are thermally stable.
  • silicon oxide and silicon oxide having vacancies are preferable because an excess oxygen region can be easily formed in a later step.
  • the insulator 580 preferably has an excess oxygen region. By providing the insulator 580 from which oxygen is released by heating in contact with the oxide 530c, oxygen in the insulator 580 can be efficiently supplied to the oxide 530 through the oxide 530c. Note that the concentration of impurities such as water or hydrogen in the insulator 580 is preferably reduced.
  • the opening of the insulator 580 is formed so as to overlap with a region between the conductor 542a and the conductor 542b. Accordingly, the conductor 560 is formed so as to be embedded in the opening of the insulator 580 and the region between the conductor 542a and the conductor 542b.
  • the conductor 560 When miniaturizing semiconductor devices, it is necessary to shorten the gate length, but it is necessary to prevent the conductivity of the conductor 560 from decreasing. Therefore, if the thickness of the conductor 560 is increased, the conductor 560 can have a shape with a high aspect ratio. In this embodiment mode, the conductor 560 is provided so as to be embedded in the opening of the insulator 580; therefore, even if the conductor 560 has a high aspect ratio, the conductor 560 can be formed without being destroyed during the process. You can
  • the insulator 574 is preferably provided in contact with the top surface of the insulator 580, the top surface of the conductor 560, and the top surface of the insulator 550.
  • an excess oxygen region can be provided in the insulator 550 and the insulator 580. Accordingly, oxygen can be supplied into the oxide 530 from the excess oxygen region.
  • insulator 574 a metal oxide containing one kind or two or more kinds selected from hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, magnesium, or the like is used. You can
  • aluminum oxide has a high barrier property and can suppress the diffusion of hydrogen and nitrogen even if it is a thin film of 0.5 nm or more and 3.0 nm or less. Therefore, the aluminum oxide film formed by a sputtering method can have a function as a barrier film against impurities such as hydrogen as well as an oxygen supply source.
  • the insulator 581 functioning as an interlayer film over the insulator 574.
  • the insulator 581 preferably has a reduced concentration of impurities such as water or hydrogen in the film.
  • the conductors 540a and 540b are arranged in the openings formed in the insulator 581, the insulator 574, the insulator 580, and the insulator 544.
  • the conductor 540a and the conductor 540b are provided to face each other with the conductor 560 interposed therebetween.
  • the conductors 540a and 540b have the same structures as conductors 546 and 548 described later.
  • An insulator 582 is provided on the insulator 581.
  • the insulator 582 it is preferable to use a substance having a barrier property against oxygen and hydrogen. Therefore, a material similar to that of the insulator 514 can be used for the insulator 582.
  • the insulator 582 is preferably formed using a metal oxide such as aluminum oxide, hafnium oxide, or tantalum oxide.
  • aluminum oxide has a high blocking effect that does not allow the film to permeate both oxygen and impurities such as hydrogen and moisture that cause fluctuations in the electrical characteristics of the transistor. Therefore, aluminum oxide can prevent impurities such as hydrogen and moisture from entering the transistor 500 during and after the manufacturing process of the transistor. Further, release of oxygen from the oxide included in the transistor 500 can be suppressed. Therefore, it is suitable to be used as a protective film for the transistor 500.
  • an insulator 586 is provided on the insulator 582.
  • a material similar to that of the insulator 320 can be used.
  • a material having a relatively low dielectric constant to these insulators, it is possible to reduce the parasitic capacitance generated between the wirings.
  • a silicon oxide film, a silicon oxynitride film, or the like can be used as the insulator 586.
  • the insulator 520, the insulator 522, the insulator 524, the insulator 544, the insulator 580, the insulator 574, the insulator 581, the insulator 582, and the insulator 586 include the conductor 546, the conductor 548, and the like. Is embedded.
  • the conductor 546 and the conductor 548 have a function as a plug connected to the capacitor 600, the transistor 500, or the transistor 300, or a wiring.
  • the conductor 546 and the conductor 548 can be provided using a material similar to that of the conductor 328 and the conductor 330.
  • an opening may be formed so as to surround the transistor 500, and an insulator having a high barrier property against hydrogen or water may be formed so as to cover the opening.
  • an insulator having a high barrier property against hydrogen or water By wrapping the transistor 500 with the above-described insulator having a high barrier property, moisture and hydrogen can be prevented from entering from the outside.
  • the plurality of transistors 500 may be collectively wrapped with an insulator having a high barrier property against hydrogen or water.
  • an opening reaching the insulator 514 or the insulator 522 is formed and the above-described insulator having a high barrier property is provided so as to be in contact with the insulator 514 or the insulator 522.
  • the formation is preferable because it can serve as part of a manufacturing process of the transistor 500.
  • the insulator having a high barrier property against hydrogen or water a material similar to that of the insulator 522 may be used, for example.
  • the capacitor element 600 is provided above the transistor 500.
  • the capacitor 600 includes a conductor 610, a conductor 620, and an insulator 630.
  • the conductor 612 may be provided over the conductor 546 and the conductor 548.
  • the conductor 612 has a function of a plug connected to the transistor 500 or a wiring.
  • the conductor 610 has a function as an electrode of the capacitor 600. Note that the conductor 612 and the conductor 610 can be formed at the same time.
  • a metal film containing an element selected from molybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium, neodymium, and scandium, or a metal nitride film containing the above element as a component (Tantalum nitride film, titanium nitride film, molybdenum nitride film, tungsten nitride film) or the like can be used.
  • indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, or silicon oxide is added.
  • a conductive material such as indium tin oxide described above can also be applied.
  • the conductor 612 and the conductor 610 have a single-layer structure in FIG. 7, the structure is not limited to the above structure and may have a stacked structure of two or more layers.
  • a conductor having a barrier property and a conductor having high adhesion to the conductor having a high conductivity may be formed between the conductor having a barrier property and the conductor having high conductivity.
  • a conductor 620 is provided so as to overlap with the conductor 610 through the insulator 630.
  • the conductor 620 can be formed using a conductive material such as a metal material, an alloy material, or a metal oxide material. It is preferable to use a high melting point material such as tungsten or molybdenum that has both heat resistance and conductivity, and it is particularly preferable to use tungsten.
  • a low resistance metal material such as Cu (copper) or Al (aluminum) may be used.
  • An insulator 650 is provided on the conductor 620 and the insulator 630.
  • the insulator 650 can be provided using a material similar to that of the insulator 320. Further, the insulator 650 may function as a flattening film that covers the uneven shape below the insulator 650.
  • a semiconductor device including a transistor including an oxide semiconductor variation in electrical characteristics can be suppressed and reliability can be improved.
  • a semiconductor device including a transistor including an oxide semiconductor can be miniaturized or highly integrated.
  • FIG. 10 shows a capacitor element 600A as an example of the capacitor element 600 applicable to the semiconductor device shown in FIG. 10A is a top view of the capacitor 600A
  • FIG. 10B is a perspective view showing a cross section taken along the alternate long and short dash line L3-L4 of the capacitive element 600A
  • FIG. 10C is a cross section taken along the alternate long and short dash line W3-L4 of the capacitive element 600A.
  • FIG. 10 shows a capacitor element 600A as an example of the capacitor element 600 applicable to the semiconductor device shown in FIG. 10A is a top view of the capacitor 600A
  • FIG. 10B is a perspective view showing a cross section taken along the alternate long and short dash line L3-L4 of the capacitive element 600A
  • FIG. 10C is a cross section taken along the alternate long and short dash line W3-L4 of the capacitive element 600A.
  • the conductor 610 functions as one of the pair of electrodes of the capacitor 600A, and the conductor 620 functions as the other of the pair of electrodes of the capacitor 600A. Further, the insulator 630 functions as a dielectric sandwiched between the pair of electrodes.
  • the capacitive element 600A is electrically connected to a conductor 546 and a conductor 548 below the conductor 610.
  • the conductor 546 and the conductor 548 function as a plug or a wiring for connecting to another circuit element.
  • 10A to 10C, the conductor 546 and the conductor 548 are collectively referred to as a conductor 540.
  • FIGS. 10A to 10C an insulator 586 in which a conductor 546 and a conductor 548 are embedded, an insulator 650 covering the conductor 620, and an insulator 630 are included in order to clearly show the drawings. Is omitted.
  • the capacitor 600 illustrated in FIGS. 7 and 8 and the capacitor 600A illustrated in FIGS. 10A to 10C are planar types, but the shape of the capacitor is not limited to this.
  • the capacitor 600 (capacitor 600A) may be the cylinder-type capacitor 600B shown in FIGS. 11A to 11C.
  • FIG. 11A is a top view of the capacitor 600B
  • FIG. 11B is a cross-sectional view taken along dashed-dotted line L3-L4 of the capacitor 600B
  • FIG. 11C is a perspective view showing a cross-section taken along dashed-dotted line W3-L4 of the capacitor 600B. is there.
  • a capacitor 600B includes an insulator 631 over an insulator 586 in which a conductor 540 is embedded, an insulator 651 having an opening, a conductor 610 functioning as one of a pair of electrodes, and a pair of electrodes. And a conductor 620 that functions as the other of the electrodes.
  • the insulator 586, the insulator 650, and the insulator 651 are omitted for the sake of clearly showing the figure.
  • the same material as the insulator 586 can be used.
  • a conductor 611 is embedded in the insulator 631 so as to be electrically connected to the conductor 540.
  • a material similar to that of the conductor 330 and the conductor 518 can be used, for example.
  • the same material as the insulator 586 can be used.
  • the insulator 651 has an opening as described above, and the opening overlaps the conductor 611.
  • the conductor 610 is formed on the bottom and side surfaces of the opening. That is, the conductor 610 overlaps with the conductor 611 and is electrically connected to the conductor 611.
  • an opening is formed in the insulator 651 by an etching method or the like, and then the conductor 610 is formed by a sputtering method, an ALD method, or the like. After that, the conductor 610 formed over the insulator 651 may be removed by a CMP (Chemical Mechanical Polishing) method or the like, leaving the conductor 610 formed over the opening.
  • CMP Chemical Mechanical Polishing
  • the insulator 630 is located on the insulator 651 and on the surface on which the conductor 610 is formed. Note that the insulator 630 functions as a dielectric which is sandwiched between a pair of electrodes in the capacitor.
  • the conductor 620 is formed on the insulator 630 so that the opening of the insulator 651 is filled.
  • the insulator 650 is formed so as to cover the insulator 630 and the conductor 620.
  • the cylinder-type capacitance element 600B shown in FIGS. 11A to 11C can have a higher capacitance value than the planar-type capacitance element 600A. Therefore, for example, by applying the capacitor 600B as the capacitor C1, the capacitor C2, or the like described in the above embodiment, the voltage between the terminals of the capacitor can be maintained for a long time.
  • a metal oxide that can be used for the OS transistors described in the above embodiments is CAC-OS (Cloud-Aligned Composite Oxide Semiconductor) and CAAC-OS (c-axis Aligned Crystal Oxide Semiconductor). ) Will be described.
  • CAC represents an example of a function or a material structure
  • CAAC represents an example of a crystal structure.
  • the CAC-OS or the CAC-metal oxide has a conductive function in a part of the material and an insulating function in a part of the material, and the whole material has a function as a semiconductor.
  • a conductive function is a function of flowing electrons (or holes) serving as carriers
  • an insulating function is an electron serving as carriers. It is a function that does not flow.
  • the CAC-OS or the CAC-metal oxide has a conductive area and an insulating area.
  • the conductive region has the above-mentioned conductive function
  • the insulating region has the above-mentioned insulating function.
  • the conductive region and the insulating region may be separated at the nanoparticle level.
  • the conductive region and the insulating region may be unevenly distributed in the material.
  • the conductive region may be observed as a cloudy connection at the periphery and connected in a cloud shape.
  • the conductive region and the insulating region are each dispersed in the material in a size of 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. There is.
  • CAC-OS or CAC-metal oxide is composed of components having different band gaps.
  • the CAC-OS or CAC-metal oxide is composed of a component having a wide gap due to the insulating region and a component having a narrow gap due to the conductive region.
  • the carrier when the carrier is flown, the carrier mainly flows in the component having the narrow gap.
  • the component having the narrow gap acts complementarily to the component having the wide gap, and the carrier also flows to the component having the wide gap in conjunction with the component having the narrow gap. Therefore, when the CAC-OS or CAC-metal oxide is used in the channel formation region of the transistor, a high current driving force, that is, a high on-current and a high field-effect mobility can be obtained in the on state of the transistor.
  • the CAC-OS or the CAC-metal oxide can also be referred to as a matrix composite material or a metal matrix composite material.
  • Oxide semiconductors are classified into single crystal oxide semiconductors and other non-single crystal oxide semiconductors.
  • the non-single-crystal oxide semiconductor include a CAAC-OS (c-axis aligned crystal oxide semiconductor), a polycrystalline oxide semiconductor, a nc-OS (nanocrystal oxide semiconductor), and a pseudo-amorphous oxide semiconductor (a-like oxide).
  • OS amorphous-like oxide semiconductor (OS) and amorphous oxide semiconductors.
  • CAAC-OS has a crystal structure having a c-axis orientation, and a plurality of nanocrystals are connected in the ab plane direction to have a strain.
  • the strain refers to a portion where the orientation of the lattice arrangement is changed between a region where the lattice arrangement is uniform and another region where the lattice arrangement is uniform in the region where a plurality of nanocrystals are connected.
  • Nanocrystals are basically hexagonal, but they are not limited to regular hexagons and may be non-regular hexagons.
  • the strain may have a lattice arrangement such as a pentagon and a heptagon.
  • a clear crystal grain boundary also referred to as a grain boundary
  • the distortion of the lattice arrangement suppresses the formation of crystal grain boundaries. This is because the CAAC-OS can tolerate strain due to a non-dense arrangement of oxygen atoms in the ab plane direction, a change in bond distance between atoms due to substitution with a metal element, or the like. It is thought to be because.
  • the CAAC-OS is a layered crystal in which a layer containing indium and oxygen (hereinafter, an In layer) and a layer containing elements M, zinc, and oxygen (hereinafter, a (M, Zn) layer) are stacked. It tends to have a structure (also called a layered structure).
  • indium and the element M can be replaced with each other, and when the element M of the (M, Zn) layer is replaced with indium, it can be expressed as an (In, M, Zn) layer.
  • the indium of the In layer is replaced with the element M, it can be expressed as an (In, M) layer.
  • CAAC-OS is an oxide semiconductor with high crystallinity.
  • the CAAC-OS a clear crystal grain boundary cannot be confirmed; therefore, it can be said that a decrease in electron mobility due to the crystal grain boundary is unlikely to occur.
  • the crystallinity of an oxide semiconductor might be lowered due to the inclusion of impurities, the generation of defects, or the like; therefore, it can be said that the CAAC-OS is an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Therefore, the oxide semiconductor including the CAAC-OS has stable physical properties. Therefore, the oxide semiconductor including the CAAC-OS is highly heat resistant and highly reliable. Further, the CAAC-OS is stable even at a high temperature (so-called thermal budget) in the manufacturing process. Therefore, when the CAAC-OS is used for the OS transistor, the degree of freedom in the manufacturing process can be increased.
  • Nc-OS has a periodic atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). Moreover, in the nc-OS, no regularity is found in the crystal orientation between different nanocrystals. Therefore, no orientation is seen in the entire film. Therefore, the nc-OS may be indistinguishable from the a-like OS or the amorphous oxide semiconductor depending on the analysis method.
  • the a-like OS is an oxide semiconductor having a structure between the nc-OS and the amorphous oxide semiconductor.
  • the a-like OS has a void or a low density region. That is, the crystallinity of the a-like OS is lower than that of the nc-OS and the CAAC-OS.
  • Oxide semiconductors have various structures, and each has different characteristics.
  • the oxide semiconductor of one embodiment of the present invention may include two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, an nc-OS, and a CAAC-OS.
  • an oxide semiconductor having a low carrier concentration for the transistor it is preferable to use an oxide semiconductor having a low carrier concentration for the transistor.
  • the concentration of impurities in the oxide semiconductor film may be lowered and the density of defect states may be lowered.
  • a low impurity concentration and a low density of defect states are sometimes referred to as high-purity intrinsic or substantially high-purity intrinsic, and also intrinsic or substantially intrinsic.
  • the density of trap states may be low.
  • the charge trapped in the trap level of the oxide semiconductor takes a long time to disappear and may behave as if it were a fixed charge. Therefore, a transistor in which a channel formation region is formed in an oxide semiconductor with a high trap level density might have unstable electrical characteristics.
  • Impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon and the like.
  • the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon in the vicinity of the interface with the oxide semiconductor are 2 ⁇ 10 18 atoms / cm 3 or less, preferably 2 ⁇ 10 17 atoms / cm 3 or less.
  • the oxide semiconductor contains an alkali metal or an alkaline earth metal
  • a defect level might be formed and a carrier might be generated. Therefore, a transistor including an oxide semiconductor containing an alkali metal or an alkaline earth metal is likely to have normally-on characteristics. Therefore, it is preferable to reduce the concentration of alkali metal or alkaline earth metal in the oxide semiconductor.
  • the concentration of an alkali metal or an alkaline earth metal in the oxide semiconductor obtained by SIMS is 1 ⁇ 10 18 atoms / cm 3 or less, preferably 2 ⁇ 10 16 atoms / cm 3 or less.
  • the oxide semiconductor when nitrogen is contained, electrons that are carriers are generated, the carrier concentration is increased, and n-type is easily generated. As a result, a transistor including an oxide semiconductor containing nitrogen as a semiconductor is likely to have normally-on characteristics. Therefore, in the oxide semiconductor, nitrogen is preferably reduced as much as possible.
  • the concentration of nitrogen in the oxide semiconductor is less than 5 ⁇ 10 19 atoms / cm 3 in SIMS, preferably 5 ⁇ 10 18. Atoms / cm 3 or less, more preferably 1 ⁇ 10 18 atoms / cm 3 or less, and further preferably 5 ⁇ 10 17 atoms / cm 3 or less.
  • the oxide semiconductor reacts with oxygen which is bonded to a metal atom to be water, which might cause oxygen deficiency.
  • oxygen When hydrogen enters the oxygen vacancies, electrons that are carriers may be generated. Further, part of hydrogen may be bonded to oxygen which is bonded to a metal atom to generate an electron which is a carrier. Therefore, a transistor including an oxide semiconductor containing hydrogen is likely to have normally-on characteristics. Therefore, it is preferable that hydrogen in the oxide semiconductor be reduced as much as possible.
  • the hydrogen concentration obtained by SIMS is less than 1 ⁇ 10 20 atoms / cm 3 , preferably less than 1 ⁇ 10 19 atoms / cm 3 , and more preferably 5 ⁇ 10 18 atoms / cm 3. It is less than 3 , and more preferably less than 1 ⁇ 10 18 atoms / cm 3 .
  • This embodiment mode shows an example of a semiconductor wafer in which the semiconductor device or the like shown in the above embodiment mode is formed and an electronic component in which the semiconductor device is incorporated.
  • a semiconductor wafer 4800 illustrated in FIG. 12A includes a wafer 4801 and a plurality of circuit portions 4802 provided on the top surface of the wafer 4801. A portion without the circuit portion 4802 on the upper surface of the wafer 4801 is a spacing 4803, which is a dicing area.
  • the semiconductor wafer 4800 can be manufactured by forming a plurality of circuit portions 4802 on the surface of the wafer 4801 by a previous process. After that, the surface of the wafer 4801 opposite to the surface on which the plurality of circuit portions 4802 are formed may be ground to reduce the thickness of the wafer 4801. Through this step, warpage of the wafer 4801 can be reduced and the size of the component can be reduced.
  • the next step is the dicing process.
  • the dicing is performed along the scribe line SCL1 and the scribe line SCL2 (which may be referred to as a dicing line or a cutting line) indicated by the one-dot chain line.
  • the spacing 4803 is provided so that the plurality of scribe lines SCL1 are parallel to each other and the plurality of scribe lines SCL2 are parallel to each other in order to easily perform the dicing process, and the scribe lines SCL1 and SCL2 are It is preferable that they are provided vertically.
  • a chip 4800a as shown in FIG. 12B can be cut out from the semiconductor wafer 4800.
  • the chip 4800a includes a wafer 4801a, a circuit portion 4802, and a spacing 4803a. Note that it is preferable that the spacing 4803a be as small as possible. In this case, the width of the spacing 4803 between the adjacent circuit portions 4802 may be substantially the same as the margin of the scribe line SCL1 or the margin of the scribe line SCL2.
  • the shape of the element substrate of one embodiment of the present invention is not limited to the shape of the semiconductor wafer 4800 illustrated in FIG. 12A.
  • it may be a semiconductor wafer having a rectangular shape.
  • the shape of the element substrate can be changed as appropriate depending on a manufacturing process of the element and an apparatus for manufacturing the element.
  • FIG. 12C shows a perspective view of electronic component 4700 and a substrate (mounting substrate 4704) on which electronic component 4700 is mounted.
  • the electronic component 4700 illustrated in FIG. 12C includes the lead 4701 and the chip 4800a described above, and functions as an IC chip or the like.
  • the electronic component 4700 includes, for example, a wire bonding step of electrically connecting the lead 4701 of the lead frame and the electrode on the chip 4800a with a thin metal wire, a molding step of sealing with an epoxy resin, and a lead frame. It can be manufactured by performing a plating process on the lead 4701 and a printing process on the surface of the package. Further, in the wire bonding process, for example, ball bonding, wedge bonding or the like can be used. Further, in FIG. 12C, QFP (Quad Flat Package) is applied to the package of the electronic component 4700, but the form of the package is not limited to this.
  • QFP Quad Flat Package
  • the electronic component 4700 is mounted on, for example, a printed circuit board 4702.
  • a plurality of such IC chips are combined and electrically connected to each other on the printed board 4702, whereby the mounting board 4704 is completed.
  • FIG. 12D shows a perspective view of the electronic component 4730.
  • the electronic component 4730 is an example of SiP (System in Package) or MCM (Multi Chip Module).
  • an interposer 4731 is provided on a package substrate 4732 (printed circuit board), and a semiconductor device 4735 and a plurality of semiconductor devices 4710 are provided on the interposer 4731.
  • the electronic component 4730 has a semiconductor device 4710.
  • the semiconductor device 4710 for example, the semiconductor device described in the above embodiment, a wide band memory (HBM: High Bandwidth Memory), or the like can be used.
  • the semiconductor device 4735 an integrated circuit (semiconductor device) such as a CPU, a GPU, an FPGA, or a memory device can be used.
  • the package substrate 4732 a ceramic substrate, a plastic substrate, a glass epoxy substrate, or the like can be used.
  • the interposer 4731 a silicon interposer, a resin interposer, or the like can be used.
  • the interposer 4731 has a plurality of wirings and has a function of electrically connecting a plurality of integrated circuits having different terminal pitches.
  • the plurality of wirings are provided in a single layer or a multilayer.
  • the interposer 4731 has a function of electrically connecting an integrated circuit provided over the interposer 4731 to an electrode provided over the package substrate 4732.
  • an interposer may be called a "redistribution board" or an "intermediate board.”
  • a through electrode may be provided in the interposer 4731, and the integrated circuit and the package substrate 4732 may be electrically connected using the through electrode.
  • TSV Three Silicon Via
  • a silicon interposer As the interposer 4731. Since a silicon interposer does not need to have an active element, it can be manufactured at lower cost than an integrated circuit. On the other hand, since the wiring of the silicon interposer can be formed by a semiconductor process, it is easy to form fine wiring, which is difficult with the resin interposer.
  • the interposer on which the HBM is mounted is required to form fine and high-density wiring. Therefore, it is preferable to use the silicon interposer as the interposer for mounting the HBM.
  • a heat sink may be provided so as to overlap with the electronic component 4730.
  • the heat sink it is preferable that the heights of the integrated circuits provided on the interposer 4731 be uniform.
  • the semiconductor device 4710 and the semiconductor device 4735 have the same height.
  • An electrode 4733 may be provided on the bottom of the package substrate 4732 in order to mount the electronic component 4730 on another substrate.
  • FIG. 12D shows an example in which the electrode 4733 is formed of a solder ball.
  • BGA Ball Grid Array
  • the electrode 4733 may be formed using a conductive pin.
  • PGA Peripheral Component Interconnect
  • the electronic component 4730 can be mounted on another board using various mounting methods other than BGA and PGA.
  • SPGA Sttaggered Pin Grid Array
  • LGA Land Grid Array
  • QFP Quad Flat Package
  • QFJ Quad Flat J-leaded package
  • QFN Quad-on-Flag
  • the cylindrical secondary battery 1400 has a positive electrode cap (battery lid) 1401 on the upper surface and battery cans (exterior cans) 1402 on the side surfaces and the bottom surface.
  • the positive electrode cap 1401 and the battery can 1402 are insulated by a gasket (insulating packing) 1410.
  • the secondary battery 1400 may be provided with a control circuit 1404 formed or fixed on a flexible substrate 1403 along the side surface of the secondary battery 1400.
  • the control circuit 1404 the semiconductor device 100, the semiconductor devices 100A to 100D described in the above embodiment can be used.
  • the control circuit 1404 can be provided along the curved surface of the cylindrical secondary battery 1400. Therefore, the space occupied by the control circuit 1404 can be reduced. Therefore, miniaturization of an electronic device including the secondary battery 1400 and the control circuit 1404 can be realized.
  • Examples of the flexible substrate 1403 include plastics represented by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyether sulfone (PES), and polytetrafluoroethylene (PTFE).
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PES polyether sulfone
  • PTFE polytetrafluoroethylene
  • there is a synthetic resin such as acrylic resin.
  • polypropylene, polyester, polyvinyl fluoride, polyvinyl chloride, or the like can be used.
  • polyamide, polyimide, aramid, epoxy, inorganic vapor deposition film, paper, or the like can be given.
  • FIG. 13B is a diagram schematically showing a cross section of a cylindrical secondary battery.
  • the cylindrical secondary battery shown in FIG. 13B has a positive electrode cap (battery lid) 1601 on the upper surface and battery cans (exterior cans) 1602 on the side and bottom surfaces.
  • the positive electrode cap and the battery can (outer can) 1602 are insulated by a gasket (insulating packing) 1610.
  • a battery element in which a belt-shaped positive electrode 1604 and a negative electrode 1606 are wound with a separator 1605 sandwiched therebetween is provided inside the hollow cylindrical battery can 1602.
  • the battery element is wound around the center pin.
  • the battery can 1602 has one end closed and the other end open.
  • a metal such as nickel, aluminum, or titanium having corrosion resistance to an electrolytic solution, or an alloy thereof or an alloy of these and another metal (for example, stainless steel) can be used. .. Further, in order to prevent corrosion due to the electrolytic solution, it is preferable to coat the battery can 1602 with nickel, aluminum or the like.
  • the battery element in which the positive electrode, the negative electrode, and the separator are wound is sandwiched by a pair of insulating plates 1608 and 1609 facing each other.
  • a non-aqueous electrolytic solution (not shown) is injected into the inside of the battery can 1602 provided with the battery element.
  • the non-aqueous electrolyte the same one as the coin type secondary battery can be used.
  • a positive electrode terminal (positive electrode current collecting lead) 1603 is connected to the positive electrode 1604, and a negative electrode terminal (negative electrode current collecting lead) 1607 is connected to the negative electrode 1606.
  • a metal material such as aluminum can be used for the positive electrode terminal 1603 and the negative electrode terminal 1607.
  • the positive electrode terminal 1603 is resistance-welded to the safety valve mechanism 1613, and the negative electrode terminal 1607 is resistance-welded to the bottom of the battery can 1602.
  • the safety valve mechanism 1613 is electrically connected to the positive electrode cap 1601 via a PTC element (Positive Temperature Coefficient) 1611.
  • the safety valve mechanism 1613 disconnects the electrical connection between the positive electrode cap 1601 and the positive electrode 1604 when the increase in the internal pressure of the battery exceeds a predetermined threshold value.
  • the PTC element 1611 is a PTC element whose resistance increases when the temperature rises, and the amount of current is limited by the increase in resistance to prevent abnormal heat generation.
  • Barium titanate (BaTiO 3 ) based semiconductor ceramics or the like can be used for the PTC element.
  • FIG. 13C shows an example of the power storage system 1415.
  • the power storage system 1415 includes a plurality of secondary batteries 1400.
  • the positive electrode of each secondary battery is in contact with and electrically connected to the conductor 1424 separated by the insulator 1425.
  • the conductor 1424 is electrically connected to the control circuit 1420 through a wiring 1423.
  • the negative electrode of each secondary battery is electrically connected to the control circuit 1420 through a wiring 1426.
  • the semiconductor device 100, the semiconductor devices 100A to 100D (or the semiconductor device 100, the electronic devices including the semiconductor devices 100A to 100D) described in the above embodiment can be used.
  • FIG. 13D shows an example of the power storage system 1415.
  • the power storage system 1415 includes a plurality of secondary batteries 1400, and the plurality of secondary batteries 1400 are sandwiched between a conductive plate 1413 and a conductive plate 1414.
  • the plurality of secondary batteries 1400 are electrically connected to the conductive plates 1413 and 1414 by a wiring 1416.
  • the plurality of secondary batteries 1400 may be connected in parallel, may be connected in series, or may be connected in parallel and then further connected in series.
  • a temperature control device may be provided between the plurality of secondary batteries 1400.
  • the secondary battery 1400 When the secondary battery 1400 is overheated, it can be cooled by the temperature control device, and when the secondary battery 1400 is too cold, it can be heated by the temperature control device. Therefore, the performance of the power storage system 1415 is less likely to be affected by the outside temperature.
  • the power storage system 1415 is electrically connected to the control circuit 1420 via wiring 1421 and wiring 1422.
  • the control circuit 1420 the battery control circuit described in any of the above embodiments can be used.
  • the wiring 1421 is electrically connected to the positive electrodes of the plurality of secondary batteries 1400 through the conductive plate 1413
  • the wiring 1422 is electrically connected to the negative electrodes of the plurality of secondary batteries 1400 through the conductive plate 1414.
  • FIG. 14A is a diagram showing the external appearance of the secondary battery pack 1531.
  • FIG. 14B is a diagram illustrating the configuration of the secondary battery pack 1531.
  • the secondary battery pack 1531 includes a circuit board 1501 and a secondary battery 1513. A label 1509 is attached to the secondary battery 1513.
  • the circuit board 1501 is fixed by a seal 1515.
  • the secondary battery pack 1531 has an antenna 1517.
  • the circuit board 1501 has a control circuit 1590.
  • the control circuit 1590 the battery control circuit described in any of the above embodiments can be used.
  • the control circuit 1590 is provided over the circuit board 1501.
  • the circuit board 1501 is electrically connected to the terminals 1511.
  • the circuit board 1501 is electrically connected to the antenna 1517, one of the positive electrode lead and the negative electrode lead 1551 of the secondary battery 1513, and the other one of the positive electrode lead and the negative electrode lead 1552.
  • a circuit system 1590a provided on the circuit board 1501 and a circuit system 1590b electrically connected to the circuit board 1501 via the terminals 1511 may be provided.
  • part of the control circuit of one embodiment of the present invention is provided in the circuit system 1590a and another part is provided in the circuit system 1590b.
  • the antenna 1517 is not limited to the coil shape, and may have a linear shape or a plate shape, for example.
  • an antenna such as a planar antenna, an aperture antenna, a traveling wave antenna, an EH antenna, a magnetic field antenna, or a dielectric antenna may be used.
  • the antenna 1517 may be a flat conductor. This plate-shaped conductor can function as one of electric field coupling conductors. That is, the antenna 1517 may function as one of the two conductors included in the capacitor. As a result, not only the electromagnetic field and the magnetic field but also the electric field can be used to exchange electric power.
  • the secondary battery pack 1531 has a layer 1519 between the antenna 1517 and the secondary battery 1513.
  • the layer 1519 has a function of shielding an electromagnetic field from the secondary battery 1513, for example.
  • a magnetic substance can be used as the layer 1519.
  • the secondary battery 1513 has a wound battery element 1593 as shown in FIG. 14C.
  • the battery element 1593 has a negative electrode 1594, a positive electrode 1595, and a separator 1596.
  • the battery element 1593 is formed by stacking a negative electrode 1594 and a positive electrode 1595 so that the negative electrode 1594 and the positive electrode 1595 overlap each other with a separator 1596 interposed therebetween, and winding the laminated sheet.
  • the information terminal 5500 illustrated in FIG. 15A is a mobile phone (smartphone) that is a type of information terminal.
  • the information terminal 5500 includes a housing 5510 and a display portion 5511.
  • a touch panel is provided in the display portion 5511 and a button is provided in the housing 5510 as an input interface.
  • FIG. 15B shows a wristwatch-type wearable terminal 5900 as an example of the information terminal.
  • the wearable terminal 5900 includes a housing 5901, a display portion 5902, operation buttons 5903, operators 5904, a band 5905, and the like.
  • the wearable terminal 5900 can prevent overcharge or overdischarge of the battery included in the wearable terminal by applying the semiconductor device described in the above embodiment.
  • FIG. 15C shows a notebook personal computer 5300 which is a kind of information terminal.
  • the laptop personal computer 5300 includes a housing 5301, a display portion 5302, a keyboard 5303, and a trackpad pointing device 5304.
  • the mouse pointing device 5305 can be used for the notebook personal computer 5300 depending on the preference of the user.
  • the notebook personal computer 5300 applies the semiconductor device described in any of the above embodiments to prevent overcharge or overdischarge of a battery included in the notebook personal computer 5300. be able to.
  • the semiconductor device described in any of the above embodiments can be applied to the mouse-type pointing device 5305, and similarly, overcharge or over-discharge of a battery included in the mouse-type pointing device 5305 can be prevented. be able to.
  • FIG. 15D illustrates a portable game machine 5200 which is an example of a game machine.
  • the portable game machine 5200 includes a housing 5201, a display portion 5202, buttons 5203, and the like.
  • FIG. 15E shows a stationary game machine 7500 which is an example of a game machine.
  • the stationary game machine 7500 has a main body 7520 and a controller 7522.
  • a controller 7522 can be connected to the main body 7520 wirelessly or by wire.
  • the controller 7522 can include a display unit for displaying a game image, a touch panel or a stick that serves as an input interface other than buttons, a rotary knob, a slide knob, and the like.
  • the controller 7522 is not limited to the shape shown in FIG. 15E, and the shape of the controller 7522 may be variously changed according to the genre of the game.
  • a trigger can be used as a button and a controller simulating a gun can be used.
  • a controller having a shape imitating a musical instrument, a musical instrument, or the like can be used.
  • the stationary game machine may be provided with a camera, a depth sensor, a microphone, etc. instead of using the controller, and may be operated by the game player's gesture and / or voice.
  • the video image of the game machine described above can be output by a display device such as a television device, a display for personal computer, a display for game, or a head mounted display.
  • a display device such as a television device, a display for personal computer, a display for game, or a head mounted display.
  • the portable game machine 5200 can prevent overcharge or overdischarge of a battery included in the portable game machine 5200 by applying the semiconductor device described in any of the above embodiments to the portable game machine 5200 as in the above electronic device. it can.
  • the controller 7522 In the stationary game machine 7500, when the controller 7522 is wirelessly connected, the controller 7522 communicates with the stationary game machine 7500 by radio waves, and thus may have a battery. Therefore, the controller 7522 can prevent overcharge or overdischarge of a battery included in the controller 7522 by applying the semiconductor device described in any of the above embodiments as in the electronic devices described above.
  • the semiconductor device described in the above embodiment can be applied to an automobile that is a moving object.
  • FIG. 15F shows an automobile 5700, which is an example of a moving body.
  • an instrument panel that provides various information by displaying speedometer, tachometer, mileage, fuel gauge, gear status, air conditioner settings, etc.
  • a display device showing the information may be provided around the driver's seat.
  • the semiconductor device described in any of the above embodiments is applied to the automobile 5700 as in the above electronic devices, so that the battery included in the controller 7522 is provided. Can be prevented from overcharging or overdischarging.
  • the moving body is not limited to a car.
  • the moving body may be a train, a monorail, a ship, a flying body (a helicopter, an unmanned aerial vehicle (drone), an airplane, a rocket), or the like.
  • FIG. 15G shows a digital camera 6240 which is an example of an image pickup apparatus.
  • the digital camera 6240 includes a housing 6241, a display portion 6242, operation buttons 6243, a shutter button 6244, and the like, and a detachable lens 6246 is attached to the digital camera 6240.
  • the digital camera 6240 is configured such that the lens 6246 can be removed from the housing 6241 and replaced here, the lens 6246 and the housing 6241 may be integrated. Further, the digital camera 6240 may be configured such that a strobe device, a viewfinder, etc. can be separately mounted.
  • Video camera The semiconductor device described in any of the above embodiments can be applied to a video camera.
  • FIG. 15H illustrates a video camera 6300 that is an example of an imaging device.
  • the video camera 6300 includes a first housing 6301, a second housing 6302, a display portion 6303, operation keys 6304, a lens 6305, a connecting portion 6306, and the like.
  • the operation key 6304 and the lens 6305 are provided in the first housing 6301, and the display portion 6303 is provided in the second housing 6302.
  • the first housing 6301 and the second housing 6302 are connected by the connecting portion 6306, and the angle between the first housing 6301 and the second housing 6302 can be changed by the connecting portion 6306. is there.
  • the image on the display portion 6303 may be switched according to the angle between the first housing 6301 and the second housing 6302 in the connection portion 6306.
  • ICD implantable defibrillator
  • the ICD main body 5400 includes at least a battery 5401, a memory device 5407, a regulator, a control circuit, an antenna 5404, a wire 5402 to the right atrium, and a wire 5403 to the right ventricle.
  • the ICD main body 5400 is placed inside the body by surgery, and two wires are passed through the subclavian vein 5405 and the superior vena cava 5406 of the human body, one wire tip is placed in the right ventricle, and the other wire tip is placed in the right atrium. To be done.
  • the ICD main body 5400 has a function as a pacemaker, and performs pacing for the heart when the heart rate is out of the specified range. If pacing does not improve heart rate (eg, fast ventricular tachycardia or ventricular fibrillation), treatment with electric shock is given.
  • heart rate eg, fast ventricular tachycardia or ventricular fibrillation
  • the ICD main body 5400 needs to constantly monitor the heart rate in order to properly perform pacing and electric shock. Therefore, the ICD main body 5400 has a sensor for detecting the heart rate. In addition, the ICD main body 5400 can store the data of the heart rate acquired by the sensor or the like, the number of times the pacing treatment is performed, the time, and the like in the storage device 5407.
  • the antenna 5404 can receive electric power, and the electric power is charged in the battery 5401. Further, since the ICD main body 5400 has a plurality of batteries, safety can be improved. Specifically, even if a part of the battery of the ICD main body 5400 becomes unusable, the remaining battery can be made to function, so that it also functions as an auxiliary power source.
  • an antenna capable of transmitting a physiological signal may be provided, and for example, a physiological signal such as pulse rate, respiration rate, heart rate, body temperature, etc. can be confirmed by an external monitor device.
  • a system for monitoring active heart activity may be configured.

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