WO2020103187A1 - 制作主动开关的光罩和显示面板的制作方法 - Google Patents

制作主动开关的光罩和显示面板的制作方法

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Publication number
WO2020103187A1
WO2020103187A1 PCT/CN2018/119061 CN2018119061W WO2020103187A1 WO 2020103187 A1 WO2020103187 A1 WO 2020103187A1 CN 2018119061 W CN2018119061 W CN 2018119061W WO 2020103187 A1 WO2020103187 A1 WO 2020103187A1
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WIPO (PCT)
Prior art keywords
area
light
semi
active switch
manufacturing
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Ceased
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PCT/CN2018/119061
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English (en)
French (fr)
Inventor
吴川
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HKC Co Ltd
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HKC Co Ltd
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Publication date
Application filed by HKC Co Ltd filed Critical HKC Co Ltd
Priority to US16/349,986 priority Critical patent/US11353787B2/en
Publication of WO2020103187A1 publication Critical patent/WO2020103187A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks

Definitions

  • the present application relates to the field of display technology, and in particular to a manufacturing method of a photomask and a display panel for manufacturing an active switch.
  • the four-pass process is commonly used in the production of display panels. Its function is to combine the amorphous silicon layer with the data line or the source-drain metal layer into a photomask. Compared with the traditional five-pass process, it reduces one lithography process. Can improve production efficiency. Each mask process in the four-pass process will go through the steps of exposure, development, etching, and photoresist stripping. In the actual production process, because the light has a certain scattering effect, it will affect the exposure quality of the active switch.
  • the arc-shaped channel region of the active switch will be out of focus during exposure.
  • the purpose of the present application is to provide a manufacturing method of a photomask and a display panel for manufacturing an active switch, so as to improve the defocus that occurs during exposure at the channel.
  • the present application provides a photomask for making an active switch
  • the photomask includes a light-shielding area, a semi-transparent area, a light-transmitting area, and a hollow area;
  • the light-shielding area corresponds to the metal layer of the active switch ,
  • the light-shielding area is configured to be opaque;
  • the semi-light-transmitting area corresponds to the channel area of the active switch, the semi-light-transmitting area is configured to partially transmit light;
  • the light-shielding area and other mask areas outside the semi-transparent area, the light-transmitting area is configured to be completely transparent;
  • the hollow area is located in the semi-transparent area, and the hollow area is configured to be completely Translucent.
  • the hollowed-out area includes a hollowed-out structure, and the hollowed-out structure is set as a slit.
  • the slit is linear.
  • multiple slits are evenly distributed in the semi-transmissive area.
  • the hollowed-out area includes a hollowed-out structure, and the hollowed-out structure is arc-shaped.
  • the hollow area includes a hollow structure, and the hollow structure is a polygon.
  • the hollow structure is set as a circular hole.
  • the round holes are evenly distributed in the semi-transmissive area.
  • the width of the slit is greater than or equal to 0.1 microns.
  • the width of the slit is less than or equal to 2 microns.
  • the metal layer includes a source metal layer and a drain metal layer;
  • the light-shielding area includes a first light-shielding area and a second light-shielding area, and the first light-shielding area corresponds to the drain metal layer;
  • the second shading area corresponds to the source metal layer;
  • the hollowed out area connects the first shading area and the second shading area.
  • the translucent area includes a semicircular area and a linear area, and the hollow area is located in the semicircular area.
  • the width of the semi-transmissive area is greater than or equal to 2.8 microns.
  • the width of the semi-transmissive area is less than or equal to 5 microns.
  • the present application also provides a photomask for manufacturing an active switch.
  • the photomask includes a light-shielding area, a semi-transparent area, a light-transmitting area, and a hollow area;
  • the light-shielding area corresponds to the metal layer of the active switch, and the light-shielding area Is configured to be opaque;
  • the semi-transparent region corresponds to the channel region of the active switch, and the semi-transparent region is configured to be partially transparent;
  • the translucent region is in addition to the light-shielding region and the
  • the transparent area is configured to be completely transparent;
  • the hollow area is located in the semi-transparent area, and the hollow area is configured to be completely transparent;
  • the hollow area includes a hollow structure, and the hollow structure is set as a slit, and the slit is linear; the width of the slit is greater than or equal to 0.1 microns and less than or equal to 2 microns;
  • the metal layer includes a source metal
  • the present application also provides a method of manufacturing a display panel.
  • the display panel includes a substrate and an active switch, and the active switch is formed on the substrate;
  • the manufacturing method of the display panel includes the following steps:
  • the active switch is manufactured using the photomask for manufacturing the active switch.
  • this application sets a hollow area on the semi-transparent area.
  • the hollow area can increase the semi-transparent area
  • the amount of light transmission can reduce the out-of-focus phenomenon during exposure and improve the process yield.
  • FIG. 1 is a schematic diagram of a mask for manufacturing an active switch according to an exemplary technology
  • FIG. 2 is a schematic diagram of manufacturing a photomask of an active switch according to one embodiment of the present application
  • FIG. 3 is a schematic diagram of manufacturing a photomask of an active switch according to another embodiment of the present application.
  • FIG. 4 is a schematic diagram of the exposure principle of the section A-A1 in FIG. 1 according to one embodiment of the present application;
  • FIG. 6 is a schematic diagram after the first wet etching of one embodiment of the present application.
  • FIG. 7 is a schematic diagram of the first dry etching of one embodiment of this application.
  • FIG. 8 is a schematic diagram of photoresist ashing according to one embodiment of the present application.
  • FIG. 9 is a schematic diagram of the second wet etching of one embodiment of the present application.
  • FIG. 10 is a schematic diagram of the second dry etching of one embodiment of this application.
  • FIG. 11 is a schematic diagram of forming a complete channel after the photoresist of one embodiment of the present application is peeled off;
  • FIG. 12 is a top view of an active switch forming a complete channel after the photoresist in FIG. 11 of the present application is stripped;
  • FIG. 13 is a schematic diagram of a flow of a method for manufacturing a display panel according to one embodiment of the present application.
  • connection should be understood in a broad sense, for example, it can be fixed connection or detachable Connected, or connected integrally; either mechanically or electrically; directly connected, or indirectly connected through an intermediary, or internally connected between two components.
  • installation should be understood in a broad sense, for example, it can be fixed connection or detachable Connected, or connected integrally; either mechanically or electrically; directly connected, or indirectly connected through an intermediary, or internally connected between two components.
  • the embodiment describes in detail the photomask for manufacturing an active switch of the present application.
  • a mask 100 for making an active switch 220 includes a light-shielding region 110, a semi-transparent region 120, a light-transmitting region 130, and a hollow region 140.
  • the light-shielding region 110 corresponds to the metal layer 221 of the active switch 220, and is configured to not
  • the translucent area 120 corresponds to the channel area 224 of the active switch 220 and is configured to partially transmit light;
  • the translucent area 130 is the area of the photomask 100 other than the light shielding area 110 and the semi-transmissive area 120, which is It is configured to be completely transparent;
  • the hollowed-out area 140 is located in the semi-transparent area 120 and is configured to be completely transparent.
  • this solution compared with the solution shown in FIG. 1, this solution provides a hollow area 140 on the semi-transparent area 120.
  • the hollow area 140 can increase the light transmission amount of the semi-transparent area 120, thereby reducing the exposure time. Out of focus phenomenon, improve the process yield.
  • the hollow region 140 includes a hollow structure 142, and the hollow structure 142 is configured as a slit 141.
  • the hollow structure 142 in the hollow area 140 is set as a slit 141, and the slit 141 can increase the light transmission of the semi-transparent area 120, and at the same time, it can not be exposed, thereby reducing the defocusing phenomenon during exposure To improve the process yield.
  • the slit 141 is linear.
  • the slit 141 is formed into a linear shape, which can transmit linear light, thereby reducing the out-of-focus phenomenon during the corresponding exposure and improving the process yield.
  • slits 141 which can increase the light transmission of the semi-transmissive area 120 and better reduce the out-of-focus phenomenon during exposure; make the extension lines of multiple slits 141 intersect at the same intersection point,
  • the slit 141 is standardized to facilitate production, thereby better improving the process yield.
  • a plurality of slits 141 are evenly distributed in the semi-transmissive area 120.
  • a plurality of slits 141 are evenly distributed in the semi-transmissive area 120, which can uniformly increase the light transmission amount of the semi-transmissive area 120, so as to stably and uniformly reduce the defocusing phenomenon during exposure and improve the process yield .
  • the hollowed-out area 140 includes a hollowed-out structure 142, and the hollowed-out structure 142 can be configured as an arc, a polygon, or other shapes.
  • the shape of the hollow structure 142 can be any shape according to specific requirements, which can reduce the out-of-focus phenomenon during the corresponding exposure and improve the process yield.
  • the hollow structure 142 is provided with a circular hole 143, and the circular holes 143 are evenly distributed in the semi-transmissive area 120.
  • the structure of the circular hole 143 has the same size in all directions, so the light passing through the circular hole 143 is uniform in all directions; according to the light transmission characteristics of the structure of the circular hole 143, this solution sets the hollow structure 142 as a circular hole 143, and evenly distribute them in the semi-transmissive area 120, so that the light transmission amount of the semi-transmissive area 120 can be uniformly increased, the defocusing phenomenon during exposure is reduced, and the process yield is improved.
  • the width L1 of the slit 141 is greater than or equal to 0.1 ⁇ m and less than or equal to 2 ⁇ m.
  • the width L1 of the slit 141 is set to be greater than or equal to 0.1 micrometers and less than or equal to 2 micrometers, it is usually not exposed. Increasing the amount can reduce the out-of-focus phenomenon during exposure and improve the process yield.
  • the metal layer 221 includes a source metal layer 222 and a drain metal layer 223;
  • the light-shielding region 110 includes a first light-shielding region 111 and a second light-shielding region 112, the first light-shielding The region 111 corresponds to the drain metal layer 223;
  • the second light shielding region 112 corresponds to the source metal layer 222;
  • the hollow region 140 connects the first light shielding region 111 and the second light shielding region 112.
  • the hollowed-out area 140 is set to connect the first light-shielding area 111 and the second light-shielding area 112 with the same width as the semi-transmissive area 120, so that the translucent area of the semi-transparent area 120 can be better taken care of The width direction can better reduce the out-of-focus phenomenon during exposure and improve the process yield.
  • the semi-transparent region 120 includes a semi-circular region 121 and a linear region 122, and the hollow region 140 is located in the semi-circular region 121.
  • the hollow region 140 is provided in the semi-circular region 121 to increase the semi-circular region The light transmission of 121 can reduce the out-of-focus phenomenon during exposure and improve the process yield.
  • the width L2 of the semi-transmissive region 120 is greater than or equal to 2.8 microns and less than or equal to 5 microns.
  • the width L2 of the semi-transmissive region 120 is set to be greater than or equal to 2.8 micrometers and at the same time less than or equal to 5 micrometers.
  • the active light produced in this way will have a conduction current that satisfies the working interval.
  • the mask 100 includes a light-shielding area 110, a semi-transparent area 120, a light-transmitting area 130, and a hollow area 140.
  • the light-shielding area 110 corresponds to the active
  • the metal layer 221 of the switch 220 is configured to be opaque; the semi-transmissive region 120 corresponds to the channel region 224 of the active switch 220 and is configured to partially transmit light; the translucent region 130 is the light-shielding region 110 and the semi-transparent region
  • the other regions of the photomask 100 outside 120 are configured to be completely transparent; the hollow region 140 is located in the semi-transparent region 120 and is configured to be completely transparent; the hollow region 140 includes a hollow structure 142, and the hollow structure 142 is set as a slit 141, the slit 141 is linear; the width L1 of the slit 141 is greater than or equal to 0.1 microns and less than or equal to 2 microns;
  • the metal layer 221 includes a source metal layer 222 and a drain metal layer 223; the light-shielding region 110 includes a first light-shielding Area 111 and second light-shielding area 112, the
  • the hollow region 140 is provided on the semi-transparent region 120.
  • the hollow region 140 can increase the light transmission of the semi-transparent region 120, thereby reducing the defocusing phenomenon during exposure and improving the process quality.
  • the hollow structure 142 in the hollow area 140 is set as a slit 141, the slit 141 can increase the amount of light transmission of the semi-transparent area 120, and at the same time can not be exposed, the slit 141 is set to a linear shape, can pass Straight light, the accuracy of the exposure machine is about 2 microns, therefore, when the width L1 of the slit 141 is set to be greater than or equal to 0.1 microns, and less than or equal to 2 microns, it is usually not exposed, so that the translucent area 120 transmits light
  • the increase in the amount can reduce the out-of-focus phenomenon during exposure and improve the process yield; set the hollow area 140 to connect the first light-shielding area 111 and the second light-shielding area 112 with the
  • the hollow area 140 is provided in the semi-circular area 121 to increase the light transmission of the semi-circular area 121 , which can reduce the out-of-focus phenomenon during exposure and improve the process yield; multiple slits 141 are evenly distributed in the semi-transmissive area 120, which can uniformly increase the light transmission of the semi-transparent area 120, so that it can be stable and uniform Reduces the out-of-focus phenomenon during exposure and improves the process yield; the width L2 of the semi-transmissive area 120 is set to be greater than or equal to 2.8 microns and at the same time less than or equal to 5 microns. The active opening produced in this way will have a very satisfactory on-current Working interval.
  • the display panel 300 includes a substrate 210 and an active switch 220, and the active switch 220 is formed on the substrate 210;
  • the manufacturing method of the display panel 300 includes manufacturing the active switch 220 by using the photomask 100 for manufacturing the active switch 220.
  • the manufacturing method of the display panel 300 includes the following steps:
  • S42 Use the semi-transmissive region 120 to form the channel region 224 of the active switch 220;
  • the hollow region 140 is used to increase the light transmission of the semi-transmissive region 120, thereby helping to form the channel region 224 of the active switch 220.
  • the technical solution of this application can be widely used in a variety of display panels, such as twisted nematic (TN) display panel, vertical alignment (VA) display panel, etc.
  • TN twisted nematic
  • VA vertical alignment
  • Panels such as Organic Light-Emitting Diode (OLED) display panels, can be applied to the above solutions.
  • OLED Organic Light-Emitting Diode

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

本申请公开了一种制作主动开关的光罩和显示面板的制作方法，所述光罩包括遮光区、半透光区、透光区以及镂空区，所述遮光区对应所述主动开关的金属层，被配置为不透光；所述半透光区对应所述主动开关的沟道区，被配置为部分透光；所述透光区为除所述遮光区和所述半透光区外的其它的光罩区域，被配置为完全透光；所述镂空区位于所述半透光区内，被配置为完全透光。

Description

制作主动开关的光罩和显示面板的制作方法
本申请要求于2018年11月21日提交中国专利局，申请号为CN201811389226.X，申请名称为“一种用于制作主动开关的光罩和显示面板的制作方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术领域，尤其涉及一种制作主动开关的光罩和显示面板的制作方法。
背景技术
这里的陈述仅提供与本申请有关的背景信息，而不必然地构成现有技术。
四道制程工艺，常用在显示面板生产中，其作用是将非晶硅层和数据线或者源漏极金属层合成一张光罩，相比传统五道制程工艺，其减少一道光刻工艺，能提升生产效率。四道制程工艺中的每一道光罩制程，都会经过曝光、显影、刻蚀、光阻胶剥离步骤；在实际生产过程中，因为光线具有一定的散射作用，会影响主动开关的曝光质量。
主动开关的圆弧形的沟道区在曝光时会失焦。
技术解决方案
本申请的目的在于提供一种制作主动开关的光罩和显示面板的制作方法，以改善沟道处曝光时发生的失焦。
为实现上述目的，本申请提供了一种制作主动开关的光罩，所述光罩包括遮光区、半透光区、透光区以及镂空区；所述遮光区对应所述主动开关的金属层，所述遮光区被配置为不透光；所述半透光区对应所述主动开关的沟道区，所述半透光区被配置为部分透光；所述透光区为除所述遮光区和所述半透光区外的其它的光罩区域，所述透光区被配置为完全透光；所述镂空区位于所述半透光区内，所述镂空区被配置为完全透光。
可选的，所述镂空区包括镂空结构，所述镂空结构设为狭缝。
可选的，所述狭缝为直线形。
可选的，所述狭缝有多条，多条所述狭缝的延长线相交于同一交点。
可选的，多条所述狭缝均匀分布在所述半透光区内。
可选的，所述镂空区包括镂空结构，所述镂空结构为弧形。
可选的，所述镂空区包括镂空结构，所述镂空结构为多边形。
可选的，所述镂空结构设为圆孔。
可选的，所述圆孔均匀分布在所述半透光区内。
可选的，所述狭缝宽度大于或等于0.1微米。
可选的，所述狭缝宽度小于或等于2微米。
可选的，所述金属层包括源极金属层和漏极金属层；所述遮光区包括第一遮光区和第二遮光区，所述第一遮光区对应所述漏极金属层；所述第二遮光区对应所述源极金属层；所述镂空区连接所述第一遮光区和第二遮光区。
可选的，所述半透光区包括半圆形的区域和直线形的区域，所述镂空区位于所述半圆形的区域内。
可选的，所述半透光区的宽度大于或等于2.8微米。
可选的，所述半透光区的宽度小于或等于5微米。
本申请还提供一种制作主动开关的光罩，所述光罩包括遮光区、半透光区、透光区以及镂空区；所述遮光区对应所述主动开关的金属层，所述遮光区被配置为不透光；所述半透光区对应所述主动开关的沟道区，所述半透光区被配置为部分透光；所述透光区为除所述遮光区和所述半透光区外的其它的光罩区域，所述透光区被配置为完全透光；所述镂空区位于所述半透光区内，所述镂空区被配置为完全透光；所述镂空区包括镂空结构，所述镂空结构设为狭缝，所述狭缝为直线形；所述狭缝宽度大于或等于0.1微米，且小于或等于2微米；所述金属层包括源极金属层和漏极金属层；所述遮光区包括第一遮光区和第二遮光区，所述第一遮光区对应所述漏极金属层；所述第二遮光区对应所述源极金属层；所述镂空区连接所述第一遮光区和第二遮光区；所述狭缝有多条，多条所述狭缝的延长线相交于同一交点；所述第一遮光区包括半圆形区，所述交点为所述半圆形区的圆心；所述半透光区包括半圆形的区域和直线形的区域，所述镂空区位于所述半圆形的区域内；多条所述狭缝均匀分布在所述半透光区内；所述半透光区的宽度大于或等于2.8微米，且小于或等于5微米。
本申请还提供一种显示面板的制作方法，所述显示面板包括衬底和主动开关，所述主动开关形成于所述衬底上；
所述显示面板的制作方法包括步骤：
采用所述制作主动开关的光罩制作所述主动开关。
相对于在制作主动开关的光罩的半透光区内不设镂空区的方案来说，本申请在半透光区上设置镂空区，相比范例性技术，镂空区可以增加半透光区的透光量，从而可以减轻曝光时候的失焦现象，提升工艺良率。
附图说明
所包括的附图用来提供对本申请实施例的理解，其构成了说明书的一部分，用于例示本 申请的实施方式，并与文字描述一起来阐释本申请的原理。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。在附图中：
图1是范例性技术的一种制作主动开关的光罩的示意图；
图2是本申请其中一个实施例的制作主动开关的光罩的示意图；
图3是本申请的另一实施例的制作主动开关的光罩的示意图；
图4是本申请其中一个实施例的图1中的截面A-A1的曝光原理示意图；
图5是本申请其中一个实施例的曝光显影后的示意图；
图6是本申请其中一个实施例的第一次湿蚀刻后的示意图；
图7是本申请其中一个实施例的第一次干蚀刻的示意图；
图8是本申请其中一个实施例的光刻胶灰化的示意图；
图9是本申请其中一个实施例的第二次湿蚀刻的示意图；
图10是本申请其中一个实施例的第二次干蚀刻的示意图；
图11是本申请其中一个实施例的光阻胶剥离后形成完整的沟道的示意图；
图12是本申请的图11中光阻胶剥离后形成完整的沟道的主动开关俯视图；
图13是本申请其中一个实施例的显示面板制作方法流程的示意图。
本申请的实施方式
这里所公开的具体结构和功能细节仅仅是代表性的，并且是描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是 两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
在图中，结构相似的是以相同标号表示。
如图2至图12所示，实施例详细描述本申请的制作主动开关的光罩。
一种制作主动开关220的光罩100，光罩100包括遮光区110、半透光区120、透光区130以及镂空区140，遮光区110对应主动开关220的金属层221，被配置为不透光；半透光区120对应主动开关220的沟道区224，被配置为部分透光；透光区130为除遮光区110和半透光区120外的其它的光罩100区域，被配置为完全透光；镂空区140位于半透光区120内，被配置为完全透光。
本方案中，相比图1所示的方案来说，本方案在半透光区120上设置镂空区140，镂空区140可以增加半透光区120的透光量，从而可以减轻曝光时候的失焦现象，提升工艺良率。
在一实施例中，如图2所示，镂空区140包括镂空结构142，镂空结构142设为狭缝141。
本方案中，将镂空区140内的镂空结构142设置为狭缝141，狭缝141可以增加半透光区120的透光量，同时又可以不被曝光，从而可以减轻曝光时候的失焦现象，提升工艺良率。
在一实施例中，如图2所示，狭缝141为直线形。
本方案中，将狭缝141设为直线形状，可以透过直线形的光，从而可以减轻对应曝光时候的失焦现象，提升工艺良率。
在一实施例中，如图2所示，狭缝141有多条，多条狭缝141的延长线相交于同一交点。
本方案中，狭缝141有多条，这样可以增加半透光区120的透光量，更好的减轻曝光时候的失焦现象；使多条狭缝141的延长线相交于同一交点，可以规范狭缝141，方便制作，从而更好的提升工艺良率。
在一实施例中，如图2所示，多条狭缝141均匀分布在半透光区120内。
本方案中，多条狭缝141均匀分布在半透光区120内，可以均匀的增加半透光区120的透光量，从而可以稳定均匀的减轻曝光时候的失焦现象，提升工艺良率。
在一实施例中，镂空区140包括镂空结构142，镂空结构142可以设为弧形、多边形以及其它形状。
本方案中，根据具体使用要求，镂空结构142的形状可以是任何形状，对应可以减轻对 应曝光时候的失焦现象，提升工艺良率。
在一实施例中，如图3所示，镂空结构142设为圆孔143，圆孔143均匀分布在半透光区120内。
本方案中，圆孔143的结构的各向尺寸相同，那么透过圆孔143的光是各向均匀的；本方案根据圆孔143的结构的透光特点，将镂空结构142设为圆孔143，且使其均匀分布在半透光区120内，这样可以均匀提高半透光区120的透光量，减轻曝光时候的失焦现象，提升工艺良率。
在一实施例中，如图2所示，狭缝141宽度L1大于或等于0.1微米，且小于或等于2微米。
本方案中，由于曝光机精度在2微米左右，因此，狭缝141宽度L1设置大于或等于0.1微米，且小于或等于2微米时，通常不会被曝光，这样半透光区120的透光量增加，可以减轻曝光时候的失焦现象，提升工艺良率。
在一实施例中，如图2和图12所示，金属层221包括源极金属层222和漏极金属层223；遮光区110包括第一遮光区111和第二遮光区112，第一遮光区111对应漏极金属层223；第二遮光区112对应源极金属层222；镂空区140连接第一遮光区111和第二遮光区112。
本方案中，将镂空区140设置为连接第一遮光区111和第二遮光区112，与半透光区120的宽度一致，这样可以使半透光区120的透光范围更好的照顾到宽度方向，可以更好的减轻曝光时候的失焦现象，提升工艺良率。
在一实施例中，如图2和图3所示，半透光区120包括半圆形的区域121和直线形的区域122，镂空区140位于半圆形的区域121内。
本方案中,由于半圆形的区域121周围都是遮光区110和半透光区120，而直线形的区域122与透光区130相邻，这样因为光线具有一定的散射作用，在制程中，保证直线形的区域122能完成曝光时，半圆形的区域121会存在一定几率的失焦，因此，本方案在半圆形的区域121内设置镂空区140，可以增加半圆形的区域121的透光量，从而可以减轻曝光时候的失焦现象，提升工艺良率。
在一实施例中，如图2和图12所示，半透光区120的宽度L2大于或等于2.8微米，且小于或等于5微米。
本方案中,半透光区120的宽度L2设为大于或等于2.8微米，同时小于或等于5微米，这样制作出来的主动开光，其导通电流会非常满足工作区间。
如图2和图12所示，公开了一种制作主动开关220的光罩100，光罩100包括遮光区110、半透光区120、透光区130以及镂空区140，遮光区110对应主动开关220的金属层221，被配置为不透光；半透光区120对应主动开关220的沟道区224，被配置为部分透光；透光 区130为除遮光区110和半透光区120外的其它的光罩100区域，被配置为完全透光；镂空区140位于半透光区120内，被配置为完全透光；镂空区140包括镂空结构142，镂空结构142设为狭缝141，狭缝141为直线形；狭缝141宽度L1大于或等于0.1微米，且小于或等于2微米；金属层221包括源极金属层222和漏极金属层223；遮光区110包括第一遮光区111和第二遮光区112，第一遮光区111对应漏极金属层223；第二遮光区112对应源极金属层222；镂空区140连接第一遮光区111和第二遮光区112；狭缝141有多条，多条狭缝141的延长线相交于同一交点；所述第一遮光区111包括半圆形区225，交点为半圆形区的圆心226；半透光区120包括半圆形的区域121和直线形的区域122，镂空区140位于半圆形的区域121内；多条狭缝141均匀分布在半透光区120内；半透光区120的宽度L2大于或等于2.8微米，且小于或等于5微米。
本方案中，在半透光区120上设置镂空区140，相比范例性技术，镂空区140可以增加半透光区120的透光量，从而可以减轻曝光时候的失焦现象，提升工艺良率；将镂空区140内的镂空结构142设置为狭缝141，狭缝141可以增加半透光区120的透光量，同时又可以不被曝光，狭缝141设为直线形状，可以透过直线形的光，曝光机精度在2微米左右，因此，狭缝141宽度L1设置大于或等于0.1微米，且小于或等于2微米时，通常不会被曝光，这样半透光区120的透光量增加，可以减轻曝光时候的失焦现象，提升工艺良率；将镂空区140设置为连接第一遮光区111和第二遮光区112，与半透光区120的宽度一致，这样可以使半透光区120的透光范围更好的照顾到宽度方向，可以更好的减轻曝光时候的失焦现象，提升工艺良率；狭缝141有多条，这样可以增加半透光区120的透光量，更好的减轻曝光时候的失焦现象；使多条狭缝141的延长线相交于同一交点，可以规范狭缝141，方便制作，从而更好的提升工艺良率；由于半圆形的区域121周围都是遮光区110和半透光区120，而直线形的区域122与透光区130相邻，这样因为光线具有一定的散射作用，在制程中，保证直线形的区域122能完成半透膜曝光时，半圆形的区域121会存在一定几率的失焦，因此，本方案在半圆形的区域121内设置镂空区140，可以增加半圆形的区域121的透光量，从而可以减轻曝光时候的失焦现象，提升工艺良率；多条狭缝141均匀分布在半透光区120内，可以均匀的增加半透光区120的透光量，从而可以稳定均匀的减轻曝光时候的失焦现象，提升工艺良率；半透光区120的宽度L2设为大于或等于2.8微米，同时小于或等于5微米，这样制作出来的主动开光，其导通电流会非常满足工作区间。
如图2至图13所示，公开了一种显示面板300的制作方法，显示面板300包括衬底210和主动开关220，主动开关220形成于衬底210上；
显示面板300的制作方法包括采用制作主动开关220的光罩100制作形成主动开关220。
更具体的，显示面板300的制作方法包括步骤：
S41：采用遮光区110形成主动开关220的金属层221；
S42：采用半透光区120形成主动开关220的沟道区224；
S43：采用透光区形成除主动开关220的金属层221和沟道区224外的其它的区域；
S44：采用镂空区140增加半透光区120的透光量，从而帮助形成主动开关220的沟道区224。
需要说明的是，本申请中涉及到的各步骤的限定，在不影响具体方案实施的前提下，并不认定为对步骤先后顺序做出限定，写在前面的步骤可以是在先执行的，也可以是在后执行的，甚至也可以是同时执行的，只要能实施本方案，都应当视为属于本申请的保护范围。
本申请的技术方案可以广泛使用在多种显示面板，如扭曲向列型(Twisted Nematic，TN)显示面板、垂直配向型(Vertical Alignment，VA)显示面板等，当然，也可以是其他类型的显示面板，如有机发光二极管(Organic Light-Emitting Diode，OLED)显示面板，均可适用上述方案。
以上内容是结合具体的可选的实施方式对本申请所作的详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本申请的保护范围。

Claims (17)

  1. 一种制作主动开关的光罩，包括：
    遮光区，对应所述主动开关的金属层，被配置为不透光；
    半透光区，对应所述主动开关的沟道区，被配置为部分透光；
    透光区，为除所述遮光区和所述半透光区外的其它的光罩区域，被配置为完全透光；以及
    镂空区，位于所述半透光区内，被配置为完全透光。
  2. 如权利要求1所述的一种制作主动开关的光罩，其中，所述镂空区包括镂空结构，所述镂空结构设为狭缝。
  3. 如权利要求2所述的一种制作主动开关的光罩，其中，所述狭缝为直线形。
  4. 如权利要求3所述的一种制作主动开关的光罩，其中，所述狭缝有多条，多条所述狭缝的延长线相交于同一交点。
  5. 如权利要求2所述的一种制作主动开关的光罩，其中，多条所述狭缝均匀分布在所述半透光区内。
  6. 如权利要求1所述的一种制作主动开关的光罩，其中，所述镂空区包括镂空结构，所述镂空结构为弧形。
  7. 如权利要求1所述的一种制作主动开关的光罩，其中，所述镂空区包括镂空结构，所述镂空结构为多边形。
  8. 如权利要求6所述的一种制作主动开关的光罩，其中，所述镂空结构设为圆孔。
  9. 如权利要求8所述的一种制作主动开关的光罩，其中，所述圆孔均匀分布在所述半透光区内。
  10. 如权利要求2所述的一种制作主动开关的光罩，其中，所述狭缝宽度大于或等于0.1微米。
  11. 如权利要求2所述的一种制作主动开关的光罩，其中，所述狭缝宽度小于或等于2微米。
  12. 如权利要求1所述的一种制作主动开关的光罩，其中，所述金属层包括源极金属层和漏极金属层；所述遮光区包括第一遮光区和第二遮光区，所述第一遮光区对应所述漏极金属层；所述第二遮光区对应所述源极金属层；所述镂空区连接所述第一遮光区和第二遮光区。
  13. 如权利要求1所述的一种制作主动开关的光罩，其中，所述半透光区包括半圆形的区域和直线形的区域，所述镂空区位于所述半圆形的区域内。
  14. 如权利要求1所述的一种制作主动开关的光罩，其中，所述半透光区的宽度大于或 等于2.8微米。
  15. 如权利要求1所述的一种制作主动开关的光罩，其中，所述半透光区的宽度小于或等于5微米。
  16. 一种制作主动开关的光罩，包括：
    遮光区，对应所述主动开关的金属层，被配置为不透光；
    半透光区，对应所述主动开关的沟道区，被配置为部分透光；
    透光区，为除所述遮光区和所述半透光区外的其它的光罩区域，被配置为完全透光；以及
    镂空区，位于所述半透光区内，被配置为完全透光；
    所述镂空区包括镂空结构，所述镂空结构设为狭缝，所述狭缝为直线形；所述狭缝宽度大于或等于0.1微米，且小于或等于2微米；
    所述金属层包括源极金属层和漏极金属层；所述遮光区包括第一遮光区和第二遮光区，所述第一遮光区对应所述漏极金属层；所述第二遮光区对应所述源极金属层；所述镂空区连接所述第一遮光区和第二遮光区；
    所述狭缝有多条，多条所述狭缝的延长线相交于同一交点；所述第一遮光区包括半圆形区，所述交点为所述半圆形区的圆心；
    所述半透光区包括半圆形的区域和直线形的区域，所述镂空区位于所述半圆形的区域内；
    多条所述狭缝均匀分布在所述半透光区内；
    所述半透光区的宽度大于或等于2.8微米，且小于或等于5微米。
  17. 一种显示面板的制作方法，所述显示面板包括：
    衬底；
    主动开关，形成于所述衬底上；
    所述显示面板的制作方法包括步骤：
    采用所述制作主动开关的光罩制作所述主动开关。
PCT/CN2018/119061 2018-11-21 2018-12-04 制作主动开关的光罩和显示面板的制作方法 Ceased WO2020103187A1 (zh)

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CN109541829B (zh) * 2018-12-19 2021-08-24 惠科股份有限公司 掩膜版、液晶面板和液晶显示装置
CN114895522B (zh) * 2022-07-13 2023-06-09 上海传芯半导体有限公司 用于duv光刻的光掩模版结构及其制备方法

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