WO2020100633A1 - 基板処理方法及び基板処理装置 - Google Patents

基板処理方法及び基板処理装置 Download PDF

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Publication number
WO2020100633A1
WO2020100633A1 PCT/JP2019/043074 JP2019043074W WO2020100633A1 WO 2020100633 A1 WO2020100633 A1 WO 2020100633A1 JP 2019043074 W JP2019043074 W JP 2019043074W WO 2020100633 A1 WO2020100633 A1 WO 2020100633A1
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Prior art keywords
film
base film
wafer
substrate processing
processing
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PCT/JP2019/043074
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English (en)
French (fr)
Japanese (ja)
Inventor
寛之 藤井
村松　誠
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東京エレクトロン株式会社
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Definitions

  • the present disclosure relates to a substrate processing method and a substrate processing apparatus.
  • Patent Document 1 discloses a method of processing a wafer W in which an amorphous carbon film, a SiARC film, and a photoresist film are sequentially stacked on a silicon base material, and the photoresist film has an opening for exposing a part of the SiARC film. ing.
  • the technology according to the present disclosure makes it possible to form a base film of a resist film, which exhibits appropriate physical properties and is thin, with high throughput.
  • One aspect of the present disclosure is a substrate processing method for processing a substrate to be processed, wherein a step of forming an organic-containing silicon oxide film as a base film for the resist film on the substrate to be processed by a spin coating method,
  • the method includes: a step of irradiating the base film with energy rays; and a step of forming a resist film on the base film irradiated with the energy rays.
  • an underlayer film of a resist film which exhibits appropriate physical properties and is thin, with high throughput.
  • various processes such as photolithography process and etching process are performed on a semiconductor wafer (hereinafter referred to as “wafer”) as a processing target substrate.
  • wafer semiconductor wafer
  • the etching target is etched using the resist pattern formed by the photolithography process as a mask.
  • the types of etching include wet etching using liquid and dry etching using gas.
  • a carbon-containing hard mask film, a silicon-containing base film, and a resist film may be sequentially stacked on the etching target film.
  • the pattern of the resist pattern is transferred by dry etching in the order of the silicon-containing base film, the carbon-containing hard mask film, and the etching target film.
  • SiARC film silicon-containing antireflection film
  • an amorphous carbon film is used as a carbon-containing hard mask. Used as.
  • An SoC (Spin on Carbon) film may be used as the carbon-containing hard mask.
  • the resist film for EUV needs to be extremely thin, for example, the film thickness needs to be 50 nm or less.
  • the silicon-containing base film is also made very thin because of the selection ratio in dry etching.
  • the thickness of the silicon-containing base film is 10 to 15 nm.
  • the film for SiARC is used as the silicon-containing base film as in Patent Document 1
  • a silicon-containing base film use of a low temperature oxide (LTO: Low Temperature Oxide) film formed by the ALD method has been studied. This LTO film can have a film thickness of 15 nm or less, but since it is formed by the ALD method, it takes time to form the film and there is room for improvement in terms of throughput.
  • LTO Low Temperature Oxide
  • Roughness may occur on the side wall of the resist pattern when the resist pattern is formed.
  • the SiARC film is used as the silicon-containing base film
  • the above roughness can be eliminated during dry etching for transferring the pattern from the resist pattern to the silicon-containing base film.
  • the LTO film is used as the silicon-containing base film
  • the roughness cannot be eliminated during the dry etching.
  • the physical properties required for the silicon-containing base film may differ for each layer constituting the semiconductor device. For example, a certain layer may be required to have physical properties capable of eliminating the roughness during the dry etching, and another layer may be required to have physical properties capable of eliminating other phenomena.
  • the technique according to the present disclosure makes it possible to form a base film of a resist film, which has appropriate physical properties and is thin, with high throughput.
  • FIG. 1 is an explanatory diagram showing an outline of a configuration of a substrate processing system having a coating and developing processing apparatus as a substrate processing apparatus according to this embodiment.
  • the substrate processing system 1 of FIG. 1 includes a coating and developing processing apparatus 2, an etching processing apparatus 3, and a control device 4 as a control unit.
  • the coating / development processing apparatus 2 is for performing photolithography processing on a wafer.
  • a resist film by a spin coating method, a base film for the resist film, and the like are formed.
  • the etching processing device 3 performs a dry etching process on the wafer.
  • a RIE (Reactive Ion Etching) apparatus or the like that performs dry etching processing on the wafer W by plasma processing is used.
  • the etching processing apparatus 3 performs, for example, etching of a base film using a resist film as a mask.
  • the control device 4 controls the operation of each device.
  • the control device 4 is a computer including, for example, a CPU and a memory, and has a program storage unit (not shown).
  • the program storage unit stores a program for controlling the wafer processing in the substrate processing system 1.
  • the program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing devices and transfer devices so as to realize wafer processing described later in the substrate processing system 1.
  • the program may be recorded in a computer-readable storage medium H and may be installed in the control device 4 from the storage medium H.
  • FIG. 2 is an explanatory diagram showing an outline of the internal configuration of the coating and developing treatment apparatus 2.
  • 3 and 4 are a front view and a rear view showing the outline of the internal configuration of the coating and developing treatment apparatus 2, respectively.
  • the coating and developing treatment apparatus 2 includes a cassette station 10 into which a cassette C containing a plurality of wafers W is loaded and unloaded, and a plurality of various treatment units that perform predetermined treatments on the wafers W.
  • a processing station 11 The coating and developing treatment apparatus 2 has a configuration in which a cassette station 10, a treatment station 11, and an interface station 13 for transferring a wafer W between the exposure station 12 adjacent to the treatment station 11 are integrally connected.
  • the cassette station 20 is provided in the cassette station 10.
  • the cassette mounting table 20 is provided with a plurality of cassette mounting plates 21 on which the cassette C is mounted when the cassette C is carried in and out of the coating and developing apparatus 2.
  • the cassette station 10 is provided with a wafer transfer unit 23 that is movable on a transfer path 22 extending in the X direction in the figure.
  • the wafer transfer unit 23 is also movable in the vertical direction and around the vertical axis ( ⁇ direction), and includes a cassette C on each cassette mounting plate 21 and a transfer unit for a third block G3 of the processing station 11, which will be described later.
  • the wafer W can be transferred between them.
  • the processing station 11 is provided with a plurality of, for example, four blocks G1, G2, G3, G4 including various units.
  • a first block G1 is provided on the front side of the processing station 11 (negative direction in the X direction in FIG. 2), and a second block G1 is provided on the rear side of the processing station 11 (positive direction in the X direction in FIG. 2).
  • Block G2 is provided.
  • a third block G3 is provided on the cassette station 10 side of the processing station 11 (Y direction negative direction side in FIG. 2), and the interface station 13 side of the processing station 11 (Y direction positive direction side). Is provided with a fourth block G4.
  • a plurality of liquid processing units for example, a development processing unit 30, a hard mask film forming unit 31, a base film forming unit 32 as a base film forming unit, and a resist film forming unit 33. are arranged in this order from the bottom.
  • the development processing unit 30 develops the wafer W.
  • the hard mask film forming unit (hereinafter referred to as “HM forming unit”) 31 forms a carbon-containing hard mask film as a hard mask film on an etching target film (for example, a silicon oxide film).
  • the carbon-containing hard mask film is a SoC film.
  • the base film forming unit 32 forms a base film for the resist film. Specifically, the base film forming unit 32 applies a predetermined film forming material on the SoC film to form a base film for the resist film.
  • the base film formed by the base film forming unit 32 is a silicon-containing base film, specifically, an organic-containing silicon oxide film whose physical properties are changed by UV irradiation.
  • the organic-containing silicon oxide film is a film containing silicon atoms, oxygen atoms, and organic groups.
  • the organic-containing silicon oxide film is an MSQ film using MSQ (methylsilsesquioxane) as a film forming material.
  • the resist film forming unit 33 applies a resist solution for EUV onto the base film formed by the base film forming unit 32 to form a resist film for EUV.
  • the development processing unit 30, the HM forming unit 31, the base film forming unit 32, and the resist film forming unit 33 are arranged side by side in the horizontal direction.
  • the number and arrangement of the development processing unit 30, the HM forming unit 31, the base film forming unit 32, and the resist film forming unit 33 can be arbitrarily selected.
  • the base film forming unit 32, and the resist film forming unit 33, the SoC film, the MSQ film, and the resist film are formed on the wafer W by the spin coating method.
  • a heat treatment unit 40 and a UV irradiation unit 41 are provided in the second block G2, as shown in FIG. 4, a heat treatment unit 40 and a UV irradiation unit 41 are provided.
  • the heat treatment unit 40 performs heat treatment such as heating and cooling of the wafer W.
  • the UV irradiation unit 41 irradiates the MSQ film formed on the wafer W with UV light as an energy ray.
  • the UV irradiation by the UV irradiation unit 41 is performed before the resist film is formed.
  • the heat treatment unit 40 and the UV irradiation unit 41 are arranged side by side in the vertical direction and the horizontal direction, and the number and arrangement thereof can be arbitrarily selected.
  • a plurality of transfer units 50, 51, 52, 53, 54, 55, 56 are provided in order from the bottom. Further, a plurality of transfer units 60, 61, 62 are provided in order from the bottom in the fourth block G4.
  • a wafer transfer area D is formed in the area surrounded by the first block G1 to the fourth block G4.
  • a wafer transfer unit 70 is arranged in the wafer transfer region D.
  • the wafer transfer unit 70 has a transfer arm 70a that is movable in, for example, the Y direction, the X direction, the ⁇ direction, and the vertical direction.
  • the wafer transfer unit 70 moves in the wafer transfer area D and transfers the wafer W to a predetermined unit in the surrounding first block G1, second block G2, third block G3 and fourth block G4. Can be transported.
  • a plurality of wafer transfer units 70 are arranged vertically and can transfer the wafer W to a predetermined unit of the same height of each of the blocks G1 to G4.
  • a shuttle transfer unit 80 that transfers the wafer W linearly between the third block G3 and the fourth block G4 is provided.
  • the shuttle transport unit 80 is linearly movable in the Y direction of FIG. 4, for example.
  • the shuttle transfer unit 80 moves in the Y direction while supporting the wafer W, and can transfer the wafer W between the transfer unit 52 of the third block G3 and the transfer unit 62 of the fourth block G4.
  • a wafer transfer unit 90 is provided next to the third block G3 on the positive side in the X direction.
  • the wafer transfer unit 90 has a transfer arm 90a that is movable in, for example, the X direction, the ⁇ direction, and the vertical direction.
  • the wafer transfer unit 90 can move up and down while supporting the wafer W and transfer the wafer W to each delivery unit in the third block G3.
  • the interface station 13 is provided with a wafer transfer unit 100 and a transfer unit 101.
  • the wafer transfer unit 100 has a transfer arm 100a that is movable in the Y direction, the ⁇ direction, and the vertical direction, for example.
  • the wafer transfer unit 100 can support the wafer W on the transfer arm 100a, for example, and transfer the wafer W between each transfer unit in the fourth block G4, the transfer unit 101, and the exposure apparatus 12.
  • the above-mentioned processing units and transporting units are controlled by the control device 4, for example.
  • 5 and 6 are a vertical cross-sectional view and a horizontal cross-sectional view showing the outline of the configuration of the base film forming unit 32, respectively.
  • the base film forming unit 32 has a processing container 120 whose inside can be closed as shown in FIG. As shown in FIG. 6, a loading / unloading port 121 for the wafer W is formed on the side surface of the processing container 120, and an opening / closing shutter 122 is provided in the loading / unloading port 121.
  • a spin chuck 130 for holding and rotating the wafer W is provided in the center of the processing container 120.
  • the spin chuck 130 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W, for example, is provided on the upper surface.
  • the wafer W can be suction-held on the spin chuck 130 by suction from the suction port.
  • the spin chuck 130 has a chuck drive mechanism 131 equipped with, for example, a motor, and can be rotated at a desired speed by the chuck drive mechanism 131. Further, the chuck drive mechanism 131 is provided with an elevation drive source such as a cylinder, and the spin chuck 130 can move up and down.
  • a chuck drive mechanism 131 equipped with, for example, a motor, and can be rotated at a desired speed by the chuck drive mechanism 131. Further, the chuck drive mechanism 131 is provided with an elevation drive source such as a cylinder, and the spin chuck 130 can move up and down.
  • a cup 132 that receives and collects the liquid that is scattered or dropped from the wafer W is provided.
  • a discharge pipe 133 that discharges the collected liquid and an exhaust pipe 134 that exhausts the atmosphere in the cup 132 are connected to the lower surface of the cup 132.
  • a rail 140 extending along the Y direction (left and right direction in FIG. 6) is formed on the X direction negative direction side (downward direction in FIG. 6) of the cup 132.
  • the rail 140 is formed, for example, from the outer side of the cup 132 in the negative Y direction (left direction in FIG. 6) to the outer side in the positive Y direction (right direction in FIG. 6).
  • An arm 141 is attached to the rail 140.
  • the coating nozzle 142 is supported on the arm 141 as shown in FIGS. 5 and 6.
  • the coating nozzle 142 discharges MSQ as a coating liquid.
  • the arm 141 is movable on the rail 140 by the nozzle driving unit 143 shown in FIG.
  • the coating nozzle 142 can be moved to a position above the central portion of the wafer W in the cup 132 from the standby portion 144 installed on the outside of the cup 132 on the positive side in the Y direction, and further on the surface of the wafer W. It can move in the radial direction of W.
  • the arm 141 can be moved up and down by the nozzle driving unit 143, and the height of the coating nozzle 142 can be adjusted.
  • the coating nozzle 142 is connected to a supply unit (not shown) that supplies MSQ to the coating nozzle 142.
  • the configurations of the development processing unit 30, the HM forming unit 31, and the resist film forming unit 33 are the same as those of the base film forming unit 32 except that the type of the processing liquid ejected from the coating nozzle 142 is different.
  • FIG. 7 is a vertical sectional view showing the outline of the configuration of the UV irradiation unit 41.
  • the UV irradiation unit 41 has a processing container 150 whose inside can be hermetically sealed as shown in FIG. 7.
  • a loading / unloading port 151 for the wafer W is formed on a surface facing the wafer transfer area D on one side surface of the processing container 150, and an opening / closing shutter 152 is provided in the loading / unloading port 151.
  • a gas supply port 160 for supplying atmospheric gas toward the inside of the processing container 150 is formed on the upper surface of the processing container 150, and a gas supply pipe 161 for supplying atmospheric gas is provided in the gas supply port 160. Are connected.
  • a gas supply source 162 for supplying atmospheric gas is connected to the gas supply pipe 161.
  • An exhaust port 163 for exhausting the atmosphere inside the processing container 150 is formed on the lower surface of the processing container 150.
  • the exhaust port 163 is provided with an atmosphere inside the processing container 150 via an exhaust pipe 164.
  • An exhaust pump 165 for evacuating is connected.
  • a cylindrical support 170 for horizontally mounting the wafer W is provided inside the processing container 150.
  • An elevating pin 171 for delivering the wafer W is installed inside the support 170 while being supported by a support member 172.
  • the elevating pins 171 are provided so as to penetrate through the through holes 173 formed in the upper surface 170a of the support body 170, and for example, three elevating pins 171 are provided.
  • a drive mechanism 174 including an elevating pin 171 and a motor for elevating the support member 172 is provided at the base end of the support member 172.
  • a UV light source 180 such as a deuterium lamp or an excimer lamp that irradiates the wafer W on the support 170 with ultraviolet rays having a wavelength of 172 nm is provided above the processing container 150.
  • the UV light source 180 can irradiate the entire surface of the wafer W with ultraviolet rays.
  • a window 181 for transmitting the ultraviolet rays from the UV light source 180 is provided on the top plate of the processing container 150.
  • the wavelength of ultraviolet rays is not limited to 172 nm, and is, for example, 150 nm to 200 nm.
  • FIG. 8 is a flowchart showing main steps of an example of wafer processing.
  • FIG. 9 is a schematic partial cross-sectional view showing the state of the wafer W in each step of wafer processing. As shown in FIG. 9A, a SiO 2 film F1 to be etched is previously formed on the surface of the wafer W on which the above-mentioned wafer processing is performed.
  • the cassette C containing a plurality of wafers W is loaded into the cassette station 10 of the coating and developing processing apparatus 2. Then, the wafer W in the cassette C is transferred to the processing station 11, the temperature thereof is adjusted by the heat treatment unit 40, and then transferred to the HM forming unit 31.
  • a predetermined coating liquid is spin-coated on the surface of the wafer W, and as shown in FIG. 9A, a SoC film F2 is formed so as to cover the SiO2 film F1 (step S1). ).
  • the formed SoC film F2 has a film thickness of 50 to 100 nm.
  • Step S2 the wafer W is transferred to the heat treatment unit 40, the SoC film F2 is heated, and then transferred to the base film forming unit 32.
  • the base film forming unit 32 a predetermined film forming material is spin-coated on the surface of the wafer W, and as shown in FIG. 9B, a base film F3 is formed so as to cover the SoC film F2.
  • the base film formed by the base film forming unit 32 is a film that can be made thinner than the film for SiARC. Thinning is possible with an organic-containing silicon oxide film such as an MSQ film. The reason is that the SiARC film is a film that is originally prepared for lithography, and therefore a mixture of an acid generator and the like is added, which limits the thinning of the film, whereas the MSQ film and the like are lithographically limited. Since it is not a film designed for use, its composition is simple and easy to be thinned. Note that an organic-containing silicon oxide film such as an MSQ film can be further thinned because it shrinks by UV irradiation.
  • the thickness of the base film F3 formed in the base film forming unit 32 is 10 to 20 nm. This film thickness is the film thickness after UV irradiation.
  • the base film formed by the base film forming unit 32 is also a film whose physical properties are changed by UV irradiation. Specifically, the physical properties of the underlying film formed by the underlying film forming unit 32 are changed by UV irradiation so that the roughness of the side wall of the resist pattern can be eliminated during dry etching of the underlying film using the resist pattern as a mask, for example. It is also a film. According to the studies conducted by the present inventors, as will be described later, in the case of an organic-containing silicon oxide film such as an MSQ film, the etching rate during dry etching changes before and after UV irradiation.
  • an organic-containing silicon oxide film such as an MSQ film
  • the base film forming unit 32 forms the MSQ film as the base film F3.
  • the organic-containing silicon oxide film such as the MSQ film changes in physical properties such as an etching rate during dry etching before and after UV irradiation.
  • the organic-containing silicon oxide film such as the MSQ film has silicon atoms and oxygen atoms, and particularly the MSQ film has a Si—O—Si silica network structure like the LTO film.
  • the organic-containing silicon oxide film also has an organic group such as a methyl group. As a result, the organic-containing silicon oxide film is different from the LTO film in physical properties such as etching rate during dry etching.
  • the wafer W is transferred to the heat treatment unit 40, the base film F3 is heated, and then transferred to the UV irradiation unit 41.
  • UV irradiation unit 41 as shown in FIG. 9C, UV irradiation with a predetermined dose amount is performed on the entire upper surface of the base film F3 in the atmospheric gas atmosphere (step S3).
  • the MSQ film formed as the base film F3 can be shrunk and further thinned.
  • step S3 the base film F4 in which all or part of the organic groups of the MSQ film formed in step S2 are removed is obtained.
  • the selection ratio in the etching of the SoC film F2 as the organic film using the MSQ film as the base film F3 as a mask by UV irradiation it is possible to increase the selection ratio in the etching of the SoC film F2 as the organic film using the MSQ film as the base film F3 as a mask by UV irradiation, and even if the base film F3 is a thin film, the selection ratio can be increased. Can be done properly. However, if the MSQ film as the base film F3 is made too hard by UV irradiation, the etching rate of the MSQ film becomes low when the MSQ film is etched using the resist film for EUV as a mask.
  • the dose amount in the UV irradiation step is set so that the SoC film F2 can be appropriately etched using the thin MSQ film, that is, the base film F3 as a mask, and the MSQ film can be appropriately etched using the resist film of EUV as a mask. Is set.
  • the film thickness of the MSQ is thin so that the MSQ film can be appropriately etched using the resist film for EUV as a mask.
  • the higher the selection ratio in etching the SoC film F2 using the MSQ film as a mask the higher the dose of UV irradiation is preferably, and as described above, the MSQ film shrinks and becomes thin by UV irradiation. .. That is, it is preferable that the film thickness of the MSQ is thin in terms of etching the SoC film F2 using the MSQ film as a mask.
  • the wafer W is transferred to the resist film forming unit 33.
  • the resist liquid for EUV is spin-coated on the surface of the wafer W, and as shown in FIG. 9D, the resist film F5 for EUV is covered so as to cover the base film F4 irradiated with UV. Are formed (step S4).
  • the film thickness of the formed resist film F5 is 30 to 100 nm.
  • the wafer W is transferred to the heat treatment unit 40, prebaked, and then transferred to the exposure apparatus 12 via the interface station 13, and a desired pattern is formed using a mask M as shown in FIG. Then, the exposure process is performed (step S5).
  • the wafer W is transferred to the heat treatment unit 40 and subjected to post-exposure bake processing. After that, the wafer W is transferred to the development processing unit 30. In the development processing unit 30, development processing is performed, and a resist pattern F6 is formed as shown in FIG. 9 (F) (step S6).
  • the wafer W is transferred to the heat treatment unit 40 and subjected to post bake processing. After that, the wafers W are sequentially accommodated in the cassette C and transported to the etching processing apparatus 3. Dry etching is performed in the etching processing apparatus 3 (step S7). Specifically, dry etching (first dry etching) of the base film F4 is performed using the resist pattern F6 as a mask. Next, dry etching (second dry etching) of the carbon-containing hard mask film is performed using the base film F4 having the pattern transferred by the first dry etching as a mask.
  • dry etching (third dry etching) of the SiO2 film F1 to be etched is performed.
  • the first to third dry etchings are performed in different processing vessels.
  • the MSQ film is formed as the base film of the resist film by the spin coating method. Therefore, the base film can be formed with high throughput. Further, in this embodiment, since the MSQ film is used as the base film, it can be made thinner than the film for SiARC. Further, in the present embodiment, the MSQ film is irradiated with UV light before the resist film is formed. Therefore, further thinning is possible. Further, since the physical properties of the MSQ film such as the etching rate during dry etching change before and after UV irradiation, the physical properties of the base film can be adjusted according to the dose of UV light. Therefore, the physical properties of the base film can be made appropriate. That is, according to the present embodiment, it is possible to form a base film of the resist film, which has appropriate physical properties and is thin, with high throughput.
  • the processing conditions for pattern transfer from the resist pattern to the underlying film for the resist pattern only by adjusting the dose amount for the MSQ film as the underlying film. Therefore, the processing conditions can be optimized in a short time. In addition, it is not necessary to prepare a plurality of types of resist solutions for optimizing the above processing conditions. Therefore, it is possible to optimize the above processing conditions and reduce the cost of wafer processing. Further, according to the present embodiment, the degree of pattern transfer to the above-described base film can be adjusted by the dose amount with respect to MSQ. Therefore, it is possible to increase the margin of other processing conditions related to the pattern transfer.
  • Demands for pattern transfer may differ for each layer that constitutes a semiconductor device.
  • the underlying film that functions as a mask for pattern transfer is also required to have different physical properties for each layer.
  • a plurality of types of base films having different physical properties can be formed from one MSQ film. Therefore, according to the present embodiment, even if a base film having different physical properties is required for each of the above requirements, only one MSQ is required as a film forming material for the base film, and a different film forming material is prepared for each layer. No need. According to the present embodiment, also from this point, cost reduction can be achieved.
  • UV irradiation is performed on the MSQ film under an atmospheric gas atmosphere.
  • the removal rate of the organic groups in the MSQ film is increased. Therefore, it is possible to form a base film having appropriate physical properties in a short time.
  • the organic-containing silicon oxide film is the MSQ film in the above description, it may be a film containing silicon atoms, oxygen atoms and an organic group.
  • a film forming material polycarbosilane -Silane may be used for the PCS film.
  • the carbon-containing hard mask film is the SoC film, but it may be an amorphous carbon film that can be formed by the CVD method or the like.
  • the carbon-containing hard mask film is a SoC film or the like that can be formed by the spin coating method, all of the carbon-containing hard mask film, the base film and the resist film can be formed in the coating and developing treatment apparatus 2. The throughput can be improved.
  • UV light is used as the energy ray, but other energy rays may be emitted.
  • the resist film for EUV is used, but another resist film may be used.
  • the inventors formed an MSQ film on the surface of a bare wafer as an evaluation wafer, irradiating the MSQ film with UV, and performed an evaluation test described below.
  • Test Example 1 and Test Example 2 described later an MSQ film having a film thickness of 10 ⁇ m was formed, and in the UV irradiation treatment in these examples, the wavelength of UV light was 172 nm, the illuminance was 50 mW / cm 2, and the dose amount was. Was set to 3000 mJ / cm 2.
  • the atmosphere in the processing container during the UV irradiation treatment was a nitrogen gas atmosphere in Test Example 1 and an atmospheric gas atmosphere in Test Example 2. Further, in the comparative example described below, the UV irradiation treatment was not performed on the MSQ film, and the other conditions were the same as those in Test Example 1 and the like.
  • Evaluation test 1 In Evaluation Test 1, the effect of UV treatment on the MSQ film on the composition of MSQ was evaluated by XPS (X-ray Photoelectron Spectroscopy).
  • FIG. 10 is a diagram showing concentration distributions in the depth direction of silicon atoms, oxygen atoms, and carbon atoms of the MSQ film in Test Example 1, Test Example 2, and Comparative Example.
  • FIG. 10A, FIG. 10B and FIG. 10C respectively show the above concentration distributions in Comparative Example, Test Example 1 and Test Example 2, respectively.
  • the ratio of carbon atoms is the same as that of silicon atoms and oxygen atoms.
  • the ratio of carbon atoms was much smaller than the ratio of silicon atoms and oxygen atoms. Then, the ratio of carbon atoms is almost zero.
  • the proportion of oxygen atoms is higher than in Test Example 1.
  • the composition of the MSQ film can be changed by UV irradiation. Further, according to the test result of the evaluation test 1, the composition of the MSQ film can be changed quickly by performing the UV irradiation in the atmospheric gas atmosphere. Furthermore, according to the test results of evaluation test 1, the composition of the MSQ film can be adjusted by adjusting the atmosphere in which UV irradiation is performed.
  • evaluation test 2 the effect of the UV treatment on the MSQ film on the etching rate in the dry etching of the MSQ film (hereinafter, simply referred to as “MSQ film etching rate”) was evaluated.
  • dry etching was performed under the processing conditions for the SiARC film, the SiO2 film, the organic film, the SiN film, the silicon film, and the TiO film.
  • FIG. 11 is a diagram showing the etching rate of the MSQ film in Test Example 2 and Comparative Example.
  • the unit of the etching rate in FIG. 11 is nm / min.
  • the test example 2 has a smaller dry etching rate of the MSQ film than the comparative example.
  • the dry etching rate of the MSQ film is half or less as compared with the comparative example.
  • the dry etching rate of the MSQ film in Test Example 2 is almost zero. According to this result, by adopting the processing condition for the organic film or the processing condition for the TiO film as the processing condition of the dry etching, etching is performed without UV irradiation, but is not etched at all when UV irradiation is performed.
  • the MSQ can be formed.
  • a substrate processing method for processing a target substrate comprising: A step of forming an organic-containing silicon oxide film as a base film for the resist film on the substrate to be processed by a spin coating method, Irradiating the underlying film with energy rays, And a step of forming the resist film on the base film irradiated with the energy beam.
  • an organic-containing silicon oxide film is formed as a base film of the resist film by a spin coating method. Therefore, a thin base film can be formed with high throughput. Further, in the present embodiment, since the organic-containing silicon film as the base film is irradiated with the energy rays before the resist film is formed, the base film can be further thinned.
  • an organic-containing silicon oxide film whose physical properties such as an etching rate during dry etching change before and after UV irradiation is used as a base film, and the base film is irradiated with energy rays before the resist film is formed. I am trying. Therefore, the physical properties of the base film can be adjusted according to the dose of energy rays. Therefore, the physical properties of the base film can be made appropriate.
  • a substrate processing apparatus for processing a target substrate comprising: A base film forming part for forming a base film for a resist film by a spin coating method, An irradiation unit that irradiates energy rays, A resist film forming portion for forming a resist film, On the substrate to be processed, a step of forming the organic-containing silicon oxide film as a base film for the resist film by a spin coating method, a step of irradiating the base film with an energy ray, and the step of irradiating the energy ray
  • a substrate processing apparatus comprising: a step of forming the resist film on a base film; and a control unit that controls the base film forming unit, the irradiation unit, and the resist film forming unit so that the process is executed.
  • control apparatus 32 base film forming unit 33 resist film forming unit 41 UV irradiation unit F3 base film F4 base film F5 resist film H storage medium M mask W wafer

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PCT/JP2019/043074 2018-11-13 2019-11-01 基板処理方法及び基板処理装置 WO2020100633A1 (ja)

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Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2012506642A (ja) * 2008-10-21 2012-03-15 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 傾斜型の光学的特性を有するｂａｒｃを用いるフォトリソグラフィを実行するための方法
JP2017102420A (ja) * 2015-05-18 2017-06-08 信越化学工業株式会社 レジスト下層膜材料及びパターン形成方法
WO2017154545A1 (ja) * 2016-03-10 2017-09-14 Jsr株式会社 レジストプロセス用膜形成材料、パターン形成方法及び重合体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012506642A (ja) * 2008-10-21 2012-03-15 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 傾斜型の光学的特性を有するｂａｒｃを用いるフォトリソグラフィを実行するための方法
JP2017102420A (ja) * 2015-05-18 2017-06-08 信越化学工業株式会社 レジスト下層膜材料及びパターン形成方法
WO2017154545A1 (ja) * 2016-03-10 2017-09-14 Jsr株式会社 レジストプロセス用膜形成材料、パターン形成方法及び重合体

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