WO2020096374A3 - 브롬 이온을 포함한 구리 전해도금용 전해질 용액 및 이를 이용한 구리 전해도금 방법 - Google Patents

브롬 이온을 포함한 구리 전해도금용 전해질 용액 및 이를 이용한 구리 전해도금 방법 Download PDF

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Publication number
WO2020096374A3
WO2020096374A3 PCT/KR2019/015070 KR2019015070W WO2020096374A3 WO 2020096374 A3 WO2020096374 A3 WO 2020096374A3 KR 2019015070 W KR2019015070 W KR 2019015070W WO 2020096374 A3 WO2020096374 A3 WO 2020096374A3
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WO
WIPO (PCT)
Prior art keywords
copper electroplating
electrolyte solution
ions
solution containing
same
Prior art date
Application number
PCT/KR2019/015070
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English (en)
French (fr)
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WO2020096374A2 (ko
Inventor
김재정
함유석
이명현
성민재
윤영
Original Assignee
서울대학교산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 서울대학교산학협력단 filed Critical 서울대학교산학협력단
Publication of WO2020096374A2 publication Critical patent/WO2020096374A2/ko
Publication of WO2020096374A3 publication Critical patent/WO2020096374A3/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
    • H05K3/424—Plated through-holes or plated via connections characterised by electroplating method by direct electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating

Abstract

본 발명은 브롬 이온을 포함한 구리 전해도금용 전해질 용액 및 구리 전해도금 방법에 관한 것이다. 본 발명에 따른 구리 전해도금용 전해질 용액은 탈이온수, 구리 이온, 지지 전해질, 염소 이온 및 브롬 이온을 포함하며, 가속제 및 감속제를 추가로 첨가하여 TSV와 마이크로비아를 결함 없이 채우는 것이 가능하다. 또한, 유기물 평탄제를 사용하지 않아 전해질 특성 유지 및 관리가 용이하며, 고가인 평탄제 대신 가격이 저렴한 브롬 화합물을 사용하여 전해도금 공정의 경제성이 향상될 수 있다.
PCT/KR2019/015070 2018-11-07 2019-11-07 브롬 이온을 포함한 구리 전해도금용 전해질 용액 및 이를 이용한 구리 전해도금 방법 WO2020096374A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020180135570A KR102277675B1 (ko) 2018-11-07 2018-11-07 브롬 이온을 포함한 구리 전해도금용 전해질 용액 및 이를 이용한 구리 전해도금 방법
KR10-2018-0135570 2018-11-07

Publications (2)

Publication Number Publication Date
WO2020096374A2 WO2020096374A2 (ko) 2020-05-14
WO2020096374A3 true WO2020096374A3 (ko) 2020-08-06

Family

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Application Number Title Priority Date Filing Date
PCT/KR2019/015070 WO2020096374A2 (ko) 2018-11-07 2019-11-07 브롬 이온을 포함한 구리 전해도금용 전해질 용액 및 이를 이용한 구리 전해도금 방법

Country Status (3)

Country Link
KR (1) KR102277675B1 (ko)
TW (1) TWI720679B (ko)
WO (1) WO2020096374A2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230148896A (ko) 2022-04-18 2023-10-26 주식회사 디와이즈 금속 이중도금방법 및 이를 통해 제조한 금속 도전체

Citations (5)

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EP1092790B1 (en) * 1999-10-14 2013-07-31 Arkema Inc. Electroplating of copper from alkanesulfonate electrolytes
KR20150024381A (ko) * 2007-08-10 2015-03-06 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 구리 도금조 제제
KR20150039731A (ko) * 2007-08-10 2015-04-13 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 구리 도금 방법
KR20180014375A (ko) * 2016-07-29 2018-02-08 삼성전기주식회사 비스-암모늄 화합물 및 디아민 화합물을 포함하는 도금용 평탄제 및 이를 이용한 구리 도금 방법
KR20180014377A (ko) * 2016-07-29 2018-02-08 삼성전기주식회사 콜린계 화합물을 포함하는 도금용 평탄제 및 이를 이용한 구리 도금 방법

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KR0154916B1 (en) 1994-10-28 1998-12-01 Lg Chemical Ltd A process for preparation of polymeric gloss modifier
US6911068B2 (en) * 2001-10-02 2005-06-28 Shipley Company, L.L.C. Plating bath and method for depositing a metal layer on a substrate
US8747643B2 (en) * 2011-08-22 2014-06-10 Rohm And Haas Electronic Materials Llc Plating bath and method
JP6408844B2 (ja) 2013-10-25 2018-10-17 日本特殊陶業株式会社 燃焼圧センサ、グロープラグ兼用燃焼圧センサ、燃焼圧センサの製造方法及びグロープラグ兼用燃焼圧センサの製造方法
KR20150078689A (ko) 2013-12-31 2015-07-08 삼성정밀화학 주식회사 피리디늄계 평탄제를 포함한 구리 도금액 및 이를 이용한 구리 도금 방법
KR20150079077A (ko) 2013-12-31 2015-07-08 삼성정밀화학 주식회사 퀴놀리늄계 평탄제를 포함하는 구리 도금액 및 이를 이용한 구리 도금 방법
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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1092790B1 (en) * 1999-10-14 2013-07-31 Arkema Inc. Electroplating of copper from alkanesulfonate electrolytes
KR20150024381A (ko) * 2007-08-10 2015-03-06 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 구리 도금조 제제
KR20150039731A (ko) * 2007-08-10 2015-04-13 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 구리 도금 방법
KR20180014375A (ko) * 2016-07-29 2018-02-08 삼성전기주식회사 비스-암모늄 화합물 및 디아민 화합물을 포함하는 도금용 평탄제 및 이를 이용한 구리 도금 방법
KR20180014377A (ko) * 2016-07-29 2018-02-08 삼성전기주식회사 콜린계 화합물을 포함하는 도금용 평탄제 및 이를 이용한 구리 도금 방법

Also Published As

Publication number Publication date
KR102277675B1 (ko) 2021-07-14
TW202018126A (zh) 2020-05-16
KR20200052537A (ko) 2020-05-15
WO2020096374A2 (ko) 2020-05-14
TWI720679B (zh) 2021-03-01

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