WO2020056809A1 - Plaque arrière de woled et son procédé de préparation - Google Patents

Plaque arrière de woled et son procédé de préparation Download PDF

Info

Publication number
WO2020056809A1
WO2020056809A1 PCT/CN2018/109625 CN2018109625W WO2020056809A1 WO 2020056809 A1 WO2020056809 A1 WO 2020056809A1 CN 2018109625 W CN2018109625 W CN 2018109625W WO 2020056809 A1 WO2020056809 A1 WO 2020056809A1
Authority
WO
WIPO (PCT)
Prior art keywords
color film
layer
sub
woled
flat layer
Prior art date
Application number
PCT/CN2018/109625
Other languages
English (en)
Chinese (zh)
Inventor
唐甲
任章淳
Original Assignee
深圳市华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Publication of WO2020056809A1 publication Critical patent/WO2020056809A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present application relates to the field of display technology, and in particular, to a WOLED backplane and a method for preparing the same.
  • the flat layer is generally a highly penetrating organic material, and the multi-directionality of light propagation often causes pixels that do not need to emit light to emit light due to adjacent pixels emitting light, which appears as light leakage.
  • the present application provides a WOLED backplane and a method for manufacturing the same, which can solve the problem of light leakage caused by pixels.
  • the present application provides a method for preparing a WOLED backplane.
  • the method includes the following steps:
  • Step S10 providing a substrate having a bottom thin film transistor layer formed thereon, and forming a patterned color film on the bottom thin film transistor layer, the color film including sub color film units corresponding to the sub pixels in a spaced distribution;
  • Step S20 forming a flat layer on the color film, and patterning the flat layer to form a groove corresponding to a spaced position between two adjacent sub color film units;
  • Step S30 forming a patterned anode corresponding to the sub-color film unit on the flat layer;
  • a patterned pixel definition layer is formed at the position of the groove, and the pixel definition layer defines a pixel area, wherein a material of the pixel definition layer is a light-absorbing material.
  • the sub-color film unit includes a red color film unit, a green color film unit, and a blue color film unit.
  • the flat layer includes a completely reserved area and a partially reserved area, and the flat layer corresponding to the completely reserved area is completely completed in the patterning process in step S20. Occlusion, and half-exposing the flat layer corresponding to the partially reserved area.
  • the completely reserved area of the flat layer corresponds to the sub color film unit, and the partially reserved area corresponds to a space position between two adjacent sub color film units.
  • the method further includes the following steps:
  • Step S50 forming an organic light emitting layer in the pixel region
  • step S60 a cathode layer is formed on the organic light emitting layer.
  • this application also provides a WOLED backplane, including:
  • a bottom thin film transistor layer is prepared on the substrate
  • a color film prepared on the underlying thin film transistor layer including sub-color film units spaced apart from each other;
  • An anode which is prepared on the flat layer corresponding to the sub-color film unit array, and the anode is located at a position between the flat layer corresponding to two adjacent grooves, and the grooves are exposed;
  • a pixel definition layer prepared on the flat layer corresponding to the position of the groove, and defining a pixel area
  • the material of the pixel definition layer is a light absorbing material.
  • the groove and the sub-color film unit are separated by the flat layer.
  • the groove is a grid-like structure surrounding the sub-color film unit.
  • the pixel definition layer includes an insertion portion and a spacer portion, the insertion portion is inserted into the groove, the spacer portion protrudes from the flat layer and two adjacent Pixel areas are spaced apart.
  • the spacer portion extends to an edge portion of the anode.
  • the insertion portion and the spacer portion are designed in one piece.
  • this application also provides a WOLED backplane, including:
  • a bottom thin film transistor layer is prepared on the substrate
  • a color film prepared on the underlying thin film transistor layer including sub-color film units spaced apart from each other;
  • the anode is prepared on the flat layer corresponding to the sub-color film unit array
  • a pixel definition layer prepared on the flat layer corresponding to the position of the groove, and defining a pixel area
  • the material of the pixel definition layer is a light absorbing material.
  • the groove and the sub-color film unit are separated by the flat layer.
  • the groove is a grid-like structure surrounding the sub-color film unit.
  • the pixel definition layer includes an insertion portion and a spacer portion, the insertion portion is inserted into the groove, the spacer portion protrudes from the flat layer and two adjacent Pixel areas are spaced apart.
  • the spacer portion extends to an edge portion of the anode.
  • the insertion portion and the spacer portion are designed in one piece.
  • the beneficial effect of the present application is that, compared with the existing WOLED backplane, the WOLED backplane and the preparation method thereof provided by the present application are provided with grooves on a flat layer corresponding to the space between adjacent two color film units And inserting the insertion portion of the pixel definition layer of the light absorbing material in the groove, so that the inside of the flat layer provided on the color film separates the different color film units by the light absorbing material, thereby avoiding the occurrence of different pixels Problems with light leakage or color mixing.
  • the insertion portion is obtained by designing the pixel definition layer, so there is no need to increase the manufacturing process of the insertion portion.
  • FIG. 1 is a flowchart of a method for preparing a WOLED backplane according to an embodiment of the present application
  • FIGS. 2A ⁇ 2D are schematic diagrams of a manufacturing process of a WOLED back sheet provided in an embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of a WOLED backplane provided by an embodiment of the present application.
  • This application is directed to the existing WOLED backplane, which has the technical problem of light leakage or color mixing between adjacent pixels. This embodiment can solve this defect.
  • FIG. 1 it is a flowchart of a method for preparing a WOLED backplane provided by an embodiment of the present application.
  • Figs. 2A to 2D a schematic diagram of a manufacturing process of a WOLED backplane provided by an embodiment of the present application is shown. The method includes the following steps:
  • step S10 a substrate on which an underlying thin film transistor layer is formed is provided.
  • a patterned color film is formed on the underlying thin film transistor layer, and the color film includes sub-color film units corresponding to sub-pixels spaced apart from each other.
  • an underlying thin film transistor layer 202 is formed on a substrate 201; and a patterned color film 203 is formed on the underlying thin film transistor layer 202.
  • the color film 203 includes a sub color film unit 203A, and a gap 203B exists between two adjacent sub color film units 203A.
  • the sub-color film unit 203A includes, but is not limited to, a red sub-color film unit, a green sub-color film unit, and a blue sub-color film unit.
  • step S20 a flat layer is formed on the color film, and the flat layer is patterned to form a groove corresponding to a spaced position between two adjacent sub color film units.
  • a flat layer 204 is formed on the color film 203, and the flat layer 204 is patterned.
  • the flat layer 204 includes a fully reserved area 204B and a partially reserved area 204C.
  • the completely reserved area 204B corresponds to the sub-color film unit 203A
  • the partially reserved area 204C corresponds to the position 203B between two adjacent sub-color film units 203A.
  • the flat layer 204 corresponding to the completely reserved area 204B is completely blocked, and the flat layer 204 corresponding to the partially reserved area 204C is half-exposed.
  • a groove 204A corresponding to the position of the space 203B is formed.
  • the groove 204A may be a grid-like structure surrounding the sub-color film unit 203A.
  • step S30 a patterned anode corresponding to the sub-color film unit is formed on the flat layer.
  • an anode metal layer is prepared on the flat layer 204. After the anode metal layer is patterned, a plurality of anodes 205 corresponding to the sub-color film unit 203A are formed, and the anodes 205 expose the grooves. 204A.
  • a patterned pixel definition layer is formed at the position of the groove, and the pixel definition layer defines a pixel area, wherein a material of the pixel definition layer is a light-absorbing material.
  • a patterned pixel definition layer 206 is formed on the anode 205.
  • the pixel definition layer 206 uses a black light-absorbing material and is located at the position of the groove 204A.
  • the pixel definition layer 206 defines Pixel area 207.
  • the method further includes the following steps:
  • Step S50 forming an organic light emitting layer in the pixel region
  • step S60 a cathode layer is formed on the organic light emitting layer.
  • the organic light-emitting material forming the organic light-emitting layer may be an evaporation material or a printing light-emitting material.
  • the corresponding pixel definition layers 206 are conventional non-hydrophobic materials and hydrophobic materials, respectively.
  • the pixel definition layer can both define the pixel area and also serve as a light-shielding column between two adjacent sub-color film units, so that the inside of the flat layer provided on the color film is light-absorbing material. Different sub-color film units are spaced apart, thereby avoiding the problem of light leakage or color mixing between different pixels.
  • the WOLED backplane includes: a substrate 301; an underlying thin film transistor layer 302 prepared on the substrate 301; and a color film 303 prepared on the underlying film.
  • the color film 303 includes sub-color film units 303A spaced apart from each other; a flat layer 304 is prepared on the color film 303 and corresponds to an interval between two adjacent sub-color film units 303A.
  • a groove 304A is provided at the position of 303B; an anode 305 is prepared on the flat layer 304 corresponding to the sub-color film unit 303A; the anode 305 is located between the two flat grooves 304A corresponding to the two adjacent grooves 304A Part of the groove so that the groove 304A is exposed; a patterned pixel definition layer 306 is prepared on the flat layer 304 corresponding to the position of the groove 304A and defines a pixel area 307; wherein the pixel definition layer
  • the material of 306 is a light absorbing material; an organic light emitting layer can be prepared in the pixel region 307, and a cathode layer is prepared on the organic light emitting layer.
  • the groove 304A and the sub-color film unit 303A are separated by the flat layer 304.
  • the depth and size of the groove 304A can be designed according to actual needs.
  • the half-tone mask process can also be used, or the ordinary mask process can be used.
  • the pixel definition layer 306 includes an insertion portion 306A and a spacer portion 306B.
  • the insertion portion 306A is inserted into the groove 304A.
  • the spacer portion 306B protrudes from the flat layer 304 and connects two adjacent pixel regions. 307 are spaced apart.
  • the inserting portion 306A and the spacer portion 306B are integrally designed, and a portion of the spacer portion 306B that is in contact with the anode 305 extends to an edge portion of the anode 305. In this way, a gap is formed between the pixel defining layer 306 and the anode 305 to prevent light leakage.
  • the WOLED backplane may further include other conventional film layers, such as a thin film encapsulation layer, etc., and details are not described herein again.
  • the sub-color film unit 303A includes, but is not limited to, a red sub-color film unit, a green sub-color film unit, and a blue sub-color film unit.
  • the material of the pixel definition layer 306 in the present application is a material having extremely low light transmittance and can play a role of blocking light, which is not specifically limited.
  • the insertion portion 306A of the pixel definition layer 306 is located in the flat layer 304 and is located between two adjacent sub-color film units 303A. The light entering the flat layer 304 and directed to the adjacent sub-color film unit 303A is effectively blocked, so as to avoid light leakage or color mixing between adjacent pixels.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne une plaque arrière de WOLED et son procédé de préparation. La plaque arrière de WOLED comprend : une couche de transistor à couches minces de couche inférieure, un film de couleur, une couche plate et une anode qui sont disposés de manière séquentielle sur un substrat, le film de couleur comprenant des unités de film de sous-couleur qui sont agencées à des intervalles, la couche plate comportant une rainure à une position correspondant à un intervalle entre les deux unités de film de sous-couleur adjacentes, et l'anode est agencée de façon à correspondre aux unités de film de sous-couleur ; et une couche de définition de pixel, dans laquelle celle-ci est agencée au niveau d'une position, correspondant à la rainure, sur la couche plate, et la couche de définition de pixels est constituée d'un matériau absorbant la lumière.
PCT/CN2018/109625 2018-09-21 2018-10-10 Plaque arrière de woled et son procédé de préparation WO2020056809A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201811110311.8A CN109346502A (zh) 2018-09-21 2018-09-21 一种woled背板及其制备方法
CN201811110311.8 2018-09-21

Publications (1)

Publication Number Publication Date
WO2020056809A1 true WO2020056809A1 (fr) 2020-03-26

Family

ID=65306469

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/109625 WO2020056809A1 (fr) 2018-09-21 2018-10-10 Plaque arrière de woled et son procédé de préparation

Country Status (2)

Country Link
CN (1) CN109346502A (fr)
WO (1) WO2020056809A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230096411A1 (en) * 2019-05-17 2023-03-30 Beijing Boe Technology Development Co., Ltd. Oled display panel and display device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110289284A (zh) * 2019-04-25 2019-09-27 昆山工研院新型平板显示技术中心有限公司 显示面板及显示面板制造方法
CN110323262B (zh) * 2019-07-08 2021-10-12 京东方科技集团股份有限公司 阵列基板、显示面板和显示装置
CN110854168B (zh) * 2019-10-31 2022-02-01 深圳市华星光电半导体显示技术有限公司 一种阵列基板、显示面板及阵列基板的制作方法
CN111293160B (zh) * 2020-02-28 2022-12-06 深圳市华星光电半导体显示技术有限公司 一种显示面板、其制备方法以及显示装置
CN111584737A (zh) * 2020-05-06 2020-08-25 Tcl华星光电技术有限公司 显示面板及其制作方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1464766A (zh) * 2002-06-25 2003-12-31 铼宝科技股份有限公司 全彩有机电致发光显示装置
US20150096614A1 (en) * 2012-05-01 2015-04-09 Chihhua Yang Thin film solar cell structure
JP2016134539A (ja) * 2015-01-21 2016-07-25 株式会社東芝 半導体発光装置
CN106098737A (zh) * 2016-07-05 2016-11-09 京东方科技集团股份有限公司 一种有机发光二极管显示面板及其制备方法和显示装置
CN106449690A (zh) * 2015-08-12 2017-02-22 精材科技股份有限公司 传感器封装体及其制造方法
CN106684108A (zh) * 2015-11-05 2017-05-17 群创光电股份有限公司 发光二极管显示设备
CN206210799U (zh) * 2016-11-15 2017-05-31 信利（惠州）智能显示有限公司 有机发光显示器件
CN107195653A (zh) * 2016-03-14 2017-09-22 群创光电股份有限公司 显示装置
CN107564945A (zh) * 2017-08-30 2018-01-09 上海天马微电子有限公司 透明显示面板、透明显示装置及透明显示面板的制作方法
CN207781606U (zh) * 2018-02-08 2018-08-28 上海和辉光电有限公司 显示面板及显示装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103000639B (zh) * 2012-12-12 2016-01-27 京东方科技集团股份有限公司 阵列基板及其制备方法、有机发光二极管显示装置
CN103022079B (zh) * 2012-12-12 2015-05-20 京东方科技集团股份有限公司 阵列基板及其制备方法、有机发光二极管显示装置
CN103022049B (zh) * 2012-12-12 2015-12-02 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN103500731B (zh) * 2013-10-18 2015-07-01 京东方科技集团股份有限公司 Oled背板及其制作方法
CN103915580B (zh) * 2014-03-31 2016-06-29 京东方科技集团股份有限公司 一种woled背板及其制作方法
CN105206758A (zh) * 2014-06-04 2015-12-30 群创光电股份有限公司 有机发光二极管显示器
CN108172600B (zh) * 2017-12-29 2020-01-17 深圳市华星光电半导体显示技术有限公司 用于woled显示器的彩膜基板及woled显示器
CN108346685B (zh) * 2018-02-12 2021-01-26 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1464766A (zh) * 2002-06-25 2003-12-31 铼宝科技股份有限公司 全彩有机电致发光显示装置
US20150096614A1 (en) * 2012-05-01 2015-04-09 Chihhua Yang Thin film solar cell structure
JP2016134539A (ja) * 2015-01-21 2016-07-25 株式会社東芝 半導体発光装置
CN106449690A (zh) * 2015-08-12 2017-02-22 精材科技股份有限公司 传感器封装体及其制造方法
CN106684108A (zh) * 2015-11-05 2017-05-17 群创光电股份有限公司 发光二极管显示设备
CN107195653A (zh) * 2016-03-14 2017-09-22 群创光电股份有限公司 显示装置
CN106098737A (zh) * 2016-07-05 2016-11-09 京东方科技集团股份有限公司 一种有机发光二极管显示面板及其制备方法和显示装置
CN206210799U (zh) * 2016-11-15 2017-05-31 信利（惠州）智能显示有限公司 有机发光显示器件
CN107564945A (zh) * 2017-08-30 2018-01-09 上海天马微电子有限公司 透明显示面板、透明显示装置及透明显示面板的制作方法
CN207781606U (zh) * 2018-02-08 2018-08-28 上海和辉光电有限公司 显示面板及显示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230096411A1 (en) * 2019-05-17 2023-03-30 Beijing Boe Technology Development Co., Ltd. Oled display panel and display device

Also Published As

Publication number Publication date
CN109346502A (zh) 2019-02-15

Similar Documents

Publication Publication Date Title
WO2020056809A1 (fr) Plaque arrière de woled et son procédé de préparation
JP7391853B2 (ja) 表示基板及び表示装置
TWI697886B (zh) 顯示結構和顯示裝置
CN109686768B (zh) 一种阵列基板及其制备方法、显示面板
WO2016004698A1 (fr) Dispositif d'affichage delo et son procédé de fabrication, dispositif d'affichage et plaque de masquage de dépôt par évaporation
CN109346505B (zh) 一种有机发光显示面板、其制备方法及显示装置
US20170033164A1 (en) Color film substrate and method for manufacturing the same, oled display panel and display apparatus
US10033018B2 (en) Display device and method of manufacturing a display device
CN111081745A (zh) 显示面板及其制备方法
WO2015196613A1 (fr) Substrat de film coloré et son procédé de fabrication, et panneau d'affichage
WO2018205652A1 (fr) Structure de pixel et son procédé de fabrication, et substrat d'affichage et appareil d'affichage
CN110277508B (zh) 有机发光二极管显示面板及其制造方法
WO2020134007A1 (fr) Panneau d'affichage, appareil électronique et procédé de fabrication de panneau d'affichage
WO2021238129A1 (fr) Panneau d'affichage et procédé de fabrication de panneau d'affichage
WO2019051931A1 (fr) Plaque de masque et procédés de fabrication et d'évaporation associés
WO2020224010A1 (fr) Panneau d'affichage à oled et son procédé de fabrication
WO2019114332A1 (fr) Substrat de réseau, appareil d'affichage et procédé de fabrication de substrat de réseau
JP2016514277A (ja) デュアルビュー表示基板および表示装置
WO2021128513A1 (fr) Panneau d'affichage à diodes électroluminescentes organiques, procédé de préparation dudit panneau et écran à diodes électroluminescentes organiques
KR102042527B1 (ko) Oled 표시 장치 및 그의 제조 방법
WO2023232106A1 (fr) Substrat de matrice, son procédé de fabrication, panneau d'affichage et dispositif d'affichage
WO2021031318A1 (fr) Panneau d'affichage transparent
KR20200135374A (ko) Oled 디스플레이 패널 및 디스플레이 장치
US20200381497A1 (en) Organic light emitting diode display panel and method for fabricating same
WO2020124859A1 (fr) Panneau d'affichage et dispositif d'affichage

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18934045

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18934045

Country of ref document: EP

Kind code of ref document: A1