WO2020037677A1 - 发光器件的封装方法、封装结构及电子设备 - Google Patents

发光器件的封装方法、封装结构及电子设备 Download PDF

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Publication number
WO2020037677A1
WO2020037677A1 PCT/CN2018/102330 CN2018102330W WO2020037677A1 WO 2020037677 A1 WO2020037677 A1 WO 2020037677A1 CN 2018102330 W CN2018102330 W CN 2018102330W WO 2020037677 A1 WO2020037677 A1 WO 2020037677A1
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Prior art keywords
emitting device
light emitting
pad
substrate
light
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PCT/CN2018/102330
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English (en)
French (fr)
Inventor
冷寒剑
吴宝全
龙卫
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深圳市汇顶科技股份有限公司
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Application filed by 深圳市汇顶科技股份有限公司 filed Critical 深圳市汇顶科技股份有限公司
Priority to PCT/CN2018/102330 priority Critical patent/WO2020037677A1/zh
Priority to CN201880001234.4A priority patent/CN109196668B/zh
Publication of WO2020037677A1 publication Critical patent/WO2020037677A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the present application relates to the field of electronic technology, and in particular, to a packaging method, a packaging structure, and an electronic device for a light emitting device.
  • the inventor of the present application has found that most of the light-emitting devices in the electronic device have the packaging structure shown in FIG. 1: the light-emitting device 10 is adhered to the substrate 20 through the adhesive 12, and the pads on the light-emitting device 10 are bonded by a conventional wire bonding process
  • the substrate 20 is electrically connected, and the metal line 11 is a connection medium.
  • a protective shell 13 is provided to protect and shield the light emitting device 10, the protective shell 13 is pasted on the base 20, and a filling glue 14 is injected into the protective shell 13 to fill the cavity.
  • the packaging structure shown in FIG. 1 is heavy and occupies a large space in the electronic device, which has become one of the bottlenecks that limit the miniaturization of the electronic device.
  • the package structure shown in FIG. 1 can only dissipate heat in a plane (contact surface of the light emitting device 10 and the substrate 20 dissipates heat), and has a relatively small heat dissipation area and low heat dissipation efficiency. If the light-emitting device is a high-power device, the lower heat dissipation efficiency is likely to affect the performance of the device. To improve the heat dissipation efficiency, it is necessary to use ceramics with good heat dissipation performance as the substrate, and the material cost is very expensive.
  • the purpose of some embodiments of the present application is to provide a light emitting device packaging method, a packaging structure, and an electronic device, which are intended to reduce the weight of the light emitting device packaging structure, reduce the volume of the light emitting device packaging structure, and reduce power consumption and improve heat dissipation efficiency .
  • An embodiment of the present application provides a method for packaging a light emitting device, including:
  • a pad lead-out structure of a fan-out package is made on the substrate, the pads of the light-emitting device are drawn to the outer contour surface of the substrate, and the light-emitting area of the light-emitting device is exposed.
  • An embodiment of the present application further provides a package structure of a light emitting device, including:
  • Light emitting device the light emitting device is located in the counterbore
  • the pad extraction structure is a pad extraction structure of a fan-out package. It is used to draw the pads of the light emitting device to the outer contour surface of the substrate and expose the light emitting area of the light emitting device.
  • An embodiment of the present application further provides an electronic device including the above-mentioned package structure of the light emitting device.
  • the embodiments of the present application bury the light-emitting device in the substrate, and the substrate itself can achieve good fixation and protection of the light-emitting device, so that it does not need to be additionally provided with a protective cover for protection, thereby reducing light emission.
  • the purpose of the weight of the device packaging structure and the reduction of the volume of the light emitting device packaging structure, and the light emitting device can realize three-dimensional heat dissipation, the heat dissipation area is large, and the purpose of improving the heat dissipation efficiency is achieved.
  • the outer contour surface of the substrate can also be coated to achieve light shielding and insulation protection of the light emitting device.
  • the metal lines are shorter, which can reduce the power consumption on the metal lines and reduce the power consumption of the light emitting device package structure. purpose.
  • the lead-out structure of the fan-out package is a rewiring structure.
  • the exposed copper area of the substrate is on the same side as the pad of the light emitting device, and the same direction extraction of the pad is achieved.
  • the pad lead-out structure of the fan-out package is manufactured on the substrate, and the pads of the light-emitting device are drawn to the outer contour surface of the substrate, which specifically includes: making a functional coating for light shielding and / or insulation on the front surface of the substrate, and A window is made on the contact area between the functional coating and the pad of the light-emitting device; a metal layer is made on the functional coating; a protective coating is made on the metal layer and the light-emitting area of the light-emitting device is exposed; The window is opened to expose a part of the metal layer, and the pad of the light-emitting device is pulled to the exposed part of the metal layer.
  • a specific implementation form for implementing a rewiring structure is provided, which increases the flexibility of the embodiments of the present application.
  • the packaging method of the light emitting device further includes: making a protective coating on the metal layer, and making a window on the protective coating, and then making solder joints on the exposed part of the metal layer, thereby facilitating the subsequent installation of the packaging structure.
  • the pad lead-out structure of the fan-out package is a combined structure of rewiring and through holes.
  • the exposed area of the substrate is on the opposite side of the pad of the light emitting device, and the extraction in the opposite direction of the pad is realized.
  • the pad lead-out structure of the fan-out package is produced on the substrate, and the pads of the light-emitting device are drawn to the outer contour surface of the substrate, which specifically include: making a through hole on the substrate; and making light-shielding and / or Insulating functional coating, and making window openings at the contact position between the through hole and the functional coating, and the contact area between the functional coating and the pad of the light emitting device; making a metal layer on the functional coating, The pad is drawn to the back of the substrate through the metal layer and the through hole; a protective coating is made on the metal layer and the light-emitting area of the light-emitting device is exposed.
  • a specific implementation form for implementing a combined structure of rewiring and through holes is provided, which increases the flexibility of the embodiments of the present application.
  • the pads of the light-emitting device are pulled to the back of the substrate through the metal layer and the through holes, and the method further includes: making solder joints at the openings of the through holes on the back of the substrate, which can facilitate Installation of subsequent packaging structures.
  • the lead-out structure includes a pad-out structure of a light-emitting device and a pad-out structure of a photoelectric conversion device, and the pad-out structure of the light-emitting device and the pad-out structure of the photoelectric conversion device are interconnected. In this way, the sealing of the light-emitting device and the photoelectric conversion device is realized, which provides a basis for further miniaturization and development of electronic equipment.
  • FIG. 1 is a schematic diagram of a packaging structure of a light emitting device in the prior art
  • FIG. 2 is a schematic flowchart of a method for packaging a light emitting device in a first embodiment
  • FIG. 3 is a schematic flowchart of step S4 in the first embodiment
  • FIG. 4 is a schematic diagram of a package structure of a light emitting device in a first embodiment
  • FIG. 5 is a schematic structural diagram of a light-emitting device and a chip joint sealing in the first embodiment
  • FIG. 6 is a schematic diagram of a package structure of a light emitting device in a second embodiment
  • FIG. 7 is a schematic flowchart of step S4 in the third embodiment.
  • FIG. 8 is a schematic diagram of a packaging structure of a light emitting device in a third embodiment
  • FIG. 9 is a schematic diagram of a packaging structure of a light emitting device in a fourth embodiment.
  • FIG. 10 is a schematic structural diagram of a light-emitting device and a chip joint sealing in a fourth embodiment.
  • the first embodiment of the present application relates to a method for packaging a light emitting device.
  • the specific process is shown in FIG. 2 and detailed as follows:
  • the substrate may be a substrate of silicon, silicon dioxide, ceramic, organic material, or semiconductor material (gallium arsenide, silicon carbide, or silicon nitride), which can ensure that the substrate has good heat dissipation performance.
  • the thickness of the substrate can be selected and designed according to the requirements (such as the size of the light-emitting device), and is generally selected between 150 ⁇ m and 750 ⁇ m.
  • the required counterbores are processed in the substrate by etching, laser, machine drilling or injection molding on the substrate.
  • the size of the counterbore is the sum of the size of the light emitting device and the bonding tolerance
  • the depth of the counterbore is the sum of the thickness of the light emitting device and the thickness of the bonding glue or electroplated metal.
  • the light emitting device is buried in the counterbore.
  • the light-emitting devices that have been ground and cut to a specified size in advance (wafer-level light-emitting devices are shipped as whole 8-inch or 12-inch wafers, and the wafers need to be processed into a single piece by grinding and cutting Light-emitting device) is placed in the counterbore, and the substance with adhesive properties such as water glue, solid glue is used to fix the light-emitting device.
  • the fixing of the light emitting device may also be implemented directly by electroplating metal and reflow soldering. This embodiment does not limit the fixing method of the light emitting device in any way.
  • the light emitting device may be a semiconductor light emitting device, such as a light emitting diode (LED), a light emitting diode (VCSEL), a vertical cavity surface emitting laser (VCSEL), and a vertical cavity surface emitting laser (VCSEL).
  • LED light emitting diode
  • VCSEL light emitting diode
  • VCSEL vertical cavity surface emitting laser
  • VCSEL vertical cavity surface emitting laser
  • a pad extraction structure of a fan-out package is fabricated on the substrate, and the pads of the light emitting device are extracted to the outer contour surface of the substrate, and the light emitting area of the light emitting device is exposed.
  • Step S4 includes four sub-steps, which are:
  • a functional coating for light shielding and / or insulation is produced on the front surface of the substrate, and a window is formed on a contact area between the functional coating and the pad of the light emitting device.
  • functional coatings can be applied using organic coating processes such as spray coating, spin coating, film coating, and silk screen printing, and then windowing can be made in the contact area between the functional coating and the pad of the light-emitting device through exposure and development.
  • the functional coating has a light-shielding function or an insulation function, or a light-shielding function and an insulation function coexist, which can be selected according to actual needs.
  • step S420 a metal layer is formed on the functional coating.
  • the metal layer can be processed by metal plating processes such as sputtering, electroplating, and evaporation, and the material can be metals such as aluminum, copper, nickel, silver, and gold having good conductivity.
  • step S430 a protective coating is made on the metal layer, and the light-emitting area of the light-emitting device is exposed.
  • the organic coating process such as spray coating, spin coating, film lamination, and silk screen printing can be used to realize the coating of the protective coating, and then the windows can be made through exposure and development to expose the light-emitting area of the light-emitting device. That is to say, a protective coating with photosensitive properties can be made on the metal layer, and then the light-emitting area of the light-emitting device is exposed, and the light-emitting area is cleaned with a developing solution, so that the light-emitting area of the light-emitting device is exposed, and the protective coating is completed. Production of layers.
  • the protective coating may be made of an organic insulating material to achieve abrasion resistance, corrosion resistance and insulation of the packaging structure.
  • a window is formed on the protective coating to expose a part of the metal layer, and the pad of the light-emitting device is pulled to the exposed part of the metal layer.
  • a window is made at a designated position of the protective coating through exposure and development to expose a part of the metal layer.
  • the designated position is preset according to the internal structure of the electronic device to be installed in combination with the light emitting device.
  • sub-step S430 and the sub-step S440 can be combined into one step for implementation, that is, the light-emitting area and the designated position of the light-emitting device on the protective coating are exposed and developed at the same time to make a window, and the light-emitting device's The light emitting area is exposed, and a part of the metal layer is exposed.
  • the functional coating can realize the adjustment of the optical information of the light emitting device (e.g., control Light spot size, control light angle, etc.), and reduce the light loss of light emitting devices, functional coating can prevent the working current to the light emitting device from leaking to the substrate through the pad lead-out structure part, which is lost by the substrate, that is, to avoid Leakage.
  • the optical information of the light emitting device e.g., control Light spot size, control light angle, etc.
  • FIG. 4 is a package structure of a light emitting device obtained according to a packaging method in an embodiment of the present application.
  • the substrate 20 is provided with a counterbore
  • the light emitting device 10 is located in the counterbore
  • the pad lead-out structure 30 is used to pull the pad of the light emitting device 10 to the outer contour surface of the substrate 20 and expose the light emitting area of the light emitting device 10.
  • the pad lead-out structure 30 is a redistribution structure, and is composed of a functional coating layer 310, a metal layer 320, and a protective coating layer 330.
  • the structures of the functional coating layer 310, the metal layer 320, and the protective coating layer 330 are as shown in FIG.
  • the thicknesses of the coating layer 310, the metal layer 320, and the protective coating layer 330 are in the order of micrometers (the specific thickness depends on the actual use requirements, and 10 micrometers or hundreds of micrometers are possible). It is not difficult to see that the pad lead-out structure 30 mainly pulls the pad of the light emitting device 10 out of the outer contour surface of the substrate through the metal layer 320.
  • the re-wiring structure-type pad lead-out structure 30 enables the exposed copper area of the substrate to be on the same side as the pad of the light-emitting device, and realizes the same-direction lead-out of the pad.
  • Such a pad lead-out structure 30 can realize direct assembly of a packaging structure, that is, there is no need to make any adjustment to a circuit board of an electronic device and an opening corresponding to a light emitting device.
  • the number of counterbores made in the substrate is one. In actual operation, more than one counterbore can be made in the substrate. That is, when step S1 is performed, a plurality of counterbore holes are made, and after the counterbore hole is completed, the photoelectric conversion device is buried in one of the counterbore holes produced. In this way, when step S4 is subsequently performed, it also includes the production of the pad lead-out structure of the photoelectric conversion device, and the pad lead-out structure of the light-emitting device and the pad lead-out structure of the photoelectric conversion device are interconnected, thereby eliminating subsequent light-emitting devices and The connection operation of the photoelectric conversion device simplifies the assembly process and has a wide application range.
  • the light-shielding function of the functional coating can not only adjust the optical information of the light emitting device, but also prevent the logical operation area of the photoelectric conversion device from being disturbed by natural light, thereby ensuring the sensitivity of the device.
  • the photoelectric conversion device 40 may be a photodiode (photodiode) (PD) chip or an image sensing chip, which is a commonly used chip.
  • PD photodiode
  • the sealing can realize the function of a distance sensor; when the photoelectric conversion device 40 is an image sensing chip and the light emitting device 10 is a vertical cavity surface emitting laser , Sealing can realize the function of stereo recognition.
  • the light-emitting device is embedded in the substrate, and the substrate itself can achieve good fixing and protection of the light-emitting device, so that the protection of the light-emitting device can be achieved without additional protection cover.
  • the structure is smaller and lighter, and the light-emitting device can realize three-dimensional heat dissipation, and the heat dissipation area is large, thereby achieving the purpose of improving the heat dissipation efficiency.
  • the functional coating has both a light-shielding function and an insulation function, the optical information adjustment and insulation protection of the light-emitting device can be realized, and the fan-out package lead-out soldering Compared with the traditional wire bonding process, the metal disk is shorter, so that the power consumption on the metal circuit can be reduced, and the power consumption of the light emitting device package structure can be reduced.
  • a second embodiment of the present application provides a method for packaging a light emitting device.
  • the second embodiment is improved on the basis of the first embodiment.
  • the main improvement is that in the second embodiment of the present application, a solder joint is also made on the exposed metal layer, which can facilitate the installation of subsequent packaging structures.
  • solder joints are made on a part of the exposed metal layer.
  • solder joints are made on the metal surface of the window opening by using processes such as ball implantation, tin printing, tin plating, and copper plating pillars.
  • the package structure of the light-emitting device obtained by the method for packaging a light-emitting device in this embodiment has more solder joints 340 than the lead-out structure 30. Because of the existence of the solder joint 340, when assembling the packaging structure of the light emitting device in this embodiment, the surface mounting technology can be directly used to install and fix the packaging structure, which is convenient to operate and has high efficiency.
  • a third embodiment of the present application provides a method for packaging a light emitting device.
  • the third embodiment is substantially the same as the first embodiment.
  • the main difference is that the pad lead-out structure of the fan-out package is different. The following is a detailed description:
  • step S4 includes:
  • step S412 a through hole is formed in the substrate.
  • through holes are etched, lasered, or machine drilled on the substrate.
  • Sub-step S422 fabricating a functional coating for shading and / or insulation on the front side of the substrate, and making an opening on the contact position between the through hole and the functional coating, and on the contact area between the functional coating and the pad of the light-emitting device. window.
  • functional coatings can be applied using organic coating processes such as spray coating, spin coating, film lamination, and silk screen printing, and then the contact positions of the functional coatings and through holes, functional coatings, and light emission can be achieved through exposure and development. Opening windows are made in the contact areas of the pads of the device to realize the exposure of the through holes and the pads of the light emitting device.
  • step S432 a metal layer is formed on the functional coating layer, and the pad of the light-emitting device is drawn to the back of the substrate through the metal layer and the through hole.
  • the metal layer can be processed by metal plating processes such as sputtering, electroplating, and evaporation, and the material can be metals such as aluminum, copper, nickel, silver, and gold having good conductivity.
  • step S442 a protective coating is formed on the metal layer, and the light-emitting area of the light-emitting device is exposed.
  • the organic coating process such as spray coating, spin coating, film coating, and silk screen printing can be used to realize the coating of the protective coating, and then a window can be made by exposing and developing to expose the light-emitting area of the light-emitting device. That is to say, a protective coating with photosensitive properties can be made on the metal layer first, in order to expose the light-emitting area of the light-emitting device, and the light-emitting area is cleaned with a developing solution, so that the light-emitting area of the light-emitting device is exposed and the protection is completed. Production of coatings.
  • the pad lead-out structure of the fan-out package in this embodiment is a combined structure of rewiring and through holes.
  • FIG. 8 shows the package structure of the light emitting device obtained by the packaging method in this embodiment.
  • the pad lead-out structure 30 also includes a functional coating 310, a metal layer 320, and a protective coating 330.
  • the pad lead-out structure 30 further includes a through hole 21, and the specific implementation of the functional coating 310, the metal layer 320, and the protective coating 330 is slightly different.
  • the pad lead-out structure 30 which can make the copper exposed area of the substrate and the pad of the light-emitting device on the opposite side, and realize the reverse lead-out of the pad.
  • the pad lead-out structure 30 provides a new assembly direction, and provides a basis for expanding the application range of the light emitting device.
  • the number of counterbores made in the substrate is one. In actual operation, more than one counterbore can be made in the substrate. That is, when step S1 is performed, a plurality of counterbore holes are made, and after the counterbore hole is completed, the photoelectric conversion device is buried in one of the counterbore holes produced. In this way, when step S4 is subsequently performed, it also includes the production of the pad lead-out structure of the photoelectric conversion device, and the pad lead-out structure of the light-emitting device and the pad lead-out structure of the photoelectric conversion device are interconnected, which is not only easy to operate, but also has a wider application range. wide. As shown in FIG.
  • the photoelectric conversion device 40 may be a chip that is commonly used in existing applications such as a photodiode PD chip or an image sensing chip.
  • the pad lead-out structure of the light-emitting device 10 on the substrate and the pad lead-out structure of the photoelectric conversion device 40 can be set at different sides according to actual needs.
  • the lead-out structure of the light-emitting device 10 is a rewiring structure
  • the lead-out structure of the photoelectric conversion device 40 is a combined structure of a rewiring and a via.
  • the lead-out structure of the light-emitting device 10 is a combined structure of rewiring and through holes
  • the lead-out structure of the photoelectric conversion device 40 is a rewiring structure.
  • a fourth embodiment of the present application provides a method for packaging a light emitting device.
  • the fourth embodiment is improved on the basis of the third embodiment.
  • the main improvement is that in the fourth embodiment of the present application, a solder joint is also made at the opening of the through hole 21 on the back surface of the substrate, which can facilitate subsequent packaging. Installation of the structure.
  • solder joints are also made on the back surface of the substrate and the opening of the through hole 21.
  • solder joints are made on the metal surface of the window opening by using processes such as ball implantation, tin printing, tin plating, and copper plating pillars.
  • the package structure of the light-emitting device obtained by the method for packaging a light-emitting device in this embodiment has more solder joints 340. Because of the existence of the solder joint 340, when assembling the packaging structure of the light emitting device in this embodiment, the surface mounting technology can be directly used to install and fix the packaging structure, which is convenient to operate and has high efficiency.
  • a fifth embodiment of the present application provides a packaging structure of a light emitting device.
  • the packaging structure mentioned in this embodiment is implemented by using the packaging method mentioned in the first embodiment, as shown in FIG. 4.
  • the package structure of the light emitting device includes a light emitting device 10, a substrate 20 and a pad lead-out structure 30. Wherein, the substrate 20 is provided with a counterbore, the light emitting device 10 is located in the counterbore, and the pad lead-out structure 30 is a rewiring structure. And the light emitting area of the light emitting device 10 is exposed.
  • the substrate 20 may be a substrate of silicon, silicon dioxide, ceramic, organic material, or semiconductor material (gallium arsenide, silicon carbide, or silicon nitride), which can ensure that the substrate 20 has good heat dissipation performance.
  • the thickness of the substrate 20 can be selected and designed according to requirements, and is generally selected between 150 ⁇ m and 750 ⁇ m.
  • the pad lead-out structure 30 is composed of a functional coating layer 310, a metal layer 320, and a protective coating layer 330.
  • the functional coating 310 is used for light shielding and / or insulation, is located on the front surface of the substrate 20, and is provided with an opening window on a contact area with the pad of the light emitting device 10.
  • the metal layer 320 is configured to be electrically connected to the light emitting device 10 through a window on the contact area, and is located on the functional coating 310.
  • the protective coating 330 is used to protect the metal layer.
  • the protective coating 330 is located on the metal layer 320 and is provided with an opening window for exposing a part of the metal layer.
  • the pad lead-out structure 30 mainly pulls out the pad of the light emitting device 10 through the metal layer 320.
  • the pad lead-out structure 30 in this embodiment enables the exposed copper area of the substrate 20 to be on the same side as the pad of the light-emitting device, and realizes the same direction of the pad.
  • Such a pad lead-out structure 30 can realize direct assembly of a packaging structure, that is, there is no need to make any adjustment to a circuit board of an electronic device and an opening corresponding to a light emitting device.
  • the above example exemplifies the case where there are one counterbore in the substrate 20.
  • more than one counter hole can be made in the substrate 20. That is, at least one counterbore is used to embed the light emitting device, at least one counterbore is used to embed the photoelectric conversion device, and the pad extraction structure of the photoelectric conversion device is also a pad extraction structure of a fan-out package.
  • the light emitting device The pad lead-out structure is interconnected with the pad lead-out structure of the photoelectric conversion device, and has a wide application range.
  • the photoelectric conversion device 40 may be a chip that is commonly used, such as a photodiode PD chip or an image sensing chip.
  • a sixth embodiment of the present application provides a packaging structure of a light emitting device.
  • the packaging structure mentioned in this embodiment is implemented by using the packaging method mentioned in the second embodiment. As shown in FIG. 6, compared with the fifth embodiment, the pads in this embodiment lead out.
  • the structure 30 has more solder joints 340. Because of the existence of the solder joint 340, when assembling the packaging structure of the light emitting device in this embodiment, the surface mounting technology can be directly used to install and fix the packaging structure, which is convenient and efficient.
  • the seventh embodiment of the present application provides a packaging structure of a light emitting device.
  • the packaging structure mentioned in this embodiment is implemented by using the packaging method mentioned in the third embodiment, as shown in FIG. 8.
  • the main difference of this embodiment is that the pad lead-out structure 30 is slightly different.
  • the pad lead-out structure 30 in this embodiment is a combined structure of a rewiring and a via.
  • the pad lead-out structure 30 includes a through hole 21 penetrating through the substrate 20, a functional coating layer 310, a metal layer 320, and a protective coating layer 330.
  • the functional coating 310 is located on the front surface of the substrate 20 and is used for light shielding and / or insulation.
  • the functional coating 310 is in a contact position between the through-hole 21 and the functional coating 310, and the pad of the functional coating 310 and the light emitting device 10. There is an opening window on the contact area.
  • the metal layer 320 is located on the functional coating layer 310 and is used to electrically connect the light-emitting device 10 and the through-hole 21 through opening a window to draw the pad of the light-emitting device to the back surface of the substrate 20.
  • the protective coating 330 is used to protect the metal layer 320 and is disposed on the metal layer 320.
  • the pad lead-out structure 30 in this embodiment can make the copper exposed area of the substrate 20 and the pad of the light-emitting device 10 on the opposite side, and realize the reverse lead-out of the pad.
  • This pad lead-out structure 30 provides a new assembly direction and provides a basis for expanding the application range of the light emitting device 10.
  • the above example exemplifies the case where there are one counterbore in the substrate 20.
  • more than one counter hole can be made in the substrate 20. That is, at least one counterbore is used for burying the light emitting device 10, at least one counterbore is used for burying the photoelectric conversion device 40, and the pad extraction structure of the photoelectric conversion device 40 is also a pad extraction structure of a fan-out package.
  • the pad lead-out structure of the light emitting device 10 and the pad lead-out structure of the photoelectric conversion device 40 are interconnected, thereby eliminating the subsequent connection operation of the light emitting device 10 and the photoelectric conversion device 40, simplifying the assembly process, and having a wide application range. As shown in FIG.
  • the photoelectric conversion device 40 may be a chip that is commonly used in existing applications such as a photodiode PD chip or an image sensing chip.
  • An eighth embodiment of the present application provides a packaging structure of a light emitting device.
  • the packaging structure mentioned in this embodiment is implemented by using the packaging method mentioned in the fourth embodiment. As shown in FIG. 9, compared with the seventh embodiment, the pads in this embodiment lead out.
  • the structure 30 has more solder joints 340. Because of the existence of the solder joint 340, when assembling the packaging structure of the light emitting device in this embodiment, the surface mounting technology can be directly used to install and fix the packaging structure, which is convenient to operate and has high efficiency.
  • a ninth embodiment of the present application provides an electronic device including the package structure of the light emitting device mentioned in the above embodiment.
  • the electronic device may be an electronic device such as a mobile phone, a tablet computer, or a Bluetooth headset, which involves using a light emitting device.

Abstract

一种发光器件(10)的封装方法、封装结构及电子设备，该发光器件(10)的封装方法包括：提供一基底(20)；在基底(20)内制作沉孔；将发光器件(10)埋入沉孔内；在基底(20)上制作扇出式封装的焊盘引出结构(30)，将发光器件(10)的焊盘牵引至基底(20)外轮廓面，并露出发光器件(10)的发光区域。该发光器件(10)的封装方法能够降低发光器件(10)封装结构的重量、缩小发光器件(10)封装结构的体积，并能够降低功耗、提高散热效率。

Description

发光器件的封装方法、封装结构及电子设备 技术领域
本申请涉及电子技术领域，特别涉及一种发光器件的封装方法、封装结构及电子设备。
背景技术
随着时代的发展和科技的进步，电子设备的体积越来越小，现已发展为可穿戴的程度。为适应这种发展趋势，电子设备中所使用的各类电子器件也面临着向体积更小，重量更轻的方向转变。
本申请发明人发现，电子设备内的发光器件大多都是图1所示的封装结构：发光器件10通过粘胶12贴合在基底20，利用传统的打线工艺将发光器件10上的焊盘与基底20做电性连接，金属线11为连接媒介。并且，设置一保护壳13对发光器件10进行保护和遮光，将保护壳13粘贴在基底20上，并向保护壳13内注入填充胶水14填充空腔。
不难看出，图1示出的封装结构重量重、在电子设备内占用空间较大，已经成为限制电子设备小型化发展的瓶颈之一。而且，图1示出的封装结构只能平面散热(发光器件10与基底20的接触面散热)，散热面积较小，散热效率较低。若发光器件为大功率器件，则较低的散热效率很可能会对器件的性能造成影响，若想要提高散热效率，则需要采用散热性能良好的陶瓷作为基底，物料成本十分昂贵。
发明内容
本申请部分实施例的目的在于提供一种发光器件的封装方法、封装结构及电子设备，旨在降低发光器件封装结构的重量、缩小发光器件封装结构的体积，并能够降低功耗、提高散热效率。
本申请实施例提供了一种发光器件的封装方法，包括：
提供一基底；
在基底内制作沉孔；
将发光器件埋入沉孔内；
在基底上制作扇出式封装的焊盘引出结构，将发光器件的焊盘牵引至基底外轮廓面，并露出发光器件的发光区域。
本申请实施例还提供了一种发光器件的封装结构，包括：
基底，基底内设有沉孔；
发光器件，发光器件位于沉孔内；
焊盘引出结构，焊盘引出结构为扇出式封装的焊盘引出结构，用于将发光器件的焊盘牵引至基底外轮廓面，并露出发光器件的发光区域。
本申请实施例还提供了一种电子设备，包括上述的发光器件的封装结构。
本申请实施例相对于现有技术而言，发光器件被埋入基底中，基底本身就能实现对发光器件的良好固定和保护，从而不仅无需额外地再设置保护罩进行保护，实现了降低发光器件封装结构的重量、缩小发光器件封装结构的体积的目的，而且发光器件能够实现立体散热，散热面积较大，实现了提高散热效率的目的。同时，基底外轮廓面还可以通过涂布涂层的方式，实现发光器件的遮光、绝缘保护。并且，利用扇出式封装的思想引出焊盘，相比于传统的打线 工艺而言，其金属线路更短，从而能够降低金属线路上的功耗，实现降低发光器件封装结构的功耗的目的。
另外，扇出式封装的焊盘引出结构为重布线结构。这样，基底的露铜区与发光器件的焊盘同侧，实现了焊盘的同向引出。
另外，在基底上制作扇出式封装的焊盘引出结构，将发光器件的焊盘牵引至基底外轮廓面，具体包括：在基底的正面制作用于遮光和/或绝缘的功能涂层，并在功能涂层与发光器件的焊盘的接触区域上制作开窗；在功能涂层上制作金属层；在金属层上制作保护涂层，并露出发光器件的发光区域；在保护涂层上制作开窗，暴露出部分金属层，将发光器件的焊盘牵引至暴露出的部分金属层。这样，提供了实现重布线结构的一种具体实现形式，增加了本申请实施例的灵活性。
另外，发光器件的封装方法还包括：在金属层上制作保护涂层，并在保护涂层上制作开窗后，在暴露出的部分金属层上制作焊点，从而能够便于后续封装结构的安装。
另外，扇出式封装的焊盘引出结构为重布线与通孔的组合结构。这样，基底的露铜区与发光器件的焊盘异侧，实现了焊盘的反方向引出。
另外，在基底上制作扇出式封装的焊盘引出结构，将发光器件的焊盘牵引至基底外轮廓面，具体包括：在基底上制作通孔；在基底的正面制作用于遮光和/或绝缘的功能涂层，并在通孔与功能涂层的接触位置，以及在功能涂层与发光器件的焊盘的接触区域上制作开窗；在功能涂层上制作金属层，将发光器件的焊盘通过金属层和通孔牵引至基底的背面；在金属层上制作保护涂层，并露出发光器件的发光区域。这样，提供了实现重布线与通孔的组合结构的一种 具体实现形式，增加了本申请实施例的灵活性。
另外，在功能涂层上制作金属层，将发光器件的焊盘通过金属层和通孔牵引至基底的背面后，还包括：在通孔在基底的背面的开口处制作焊点，从而能够便于后续封装结构的安装。
另外，在基底内制作的沉孔大于1个，其中，至少一个沉孔用于埋入发光器件，至少一个沉孔用于埋入光电转换器件；在基底上制作的扇出式封装的焊盘引出结构，包括发光器件的焊盘引出结构和光电转换器件的焊盘引出结构，并且，发光器件的焊盘引出结构和光电转换器件的焊盘引出结构互连。这样，实现了发光器件与光电转换器件的合封，为进一步地实现电子设备小型化发展提供了基础。
附图说明
一个或多个实施例通过与之对应的附图中的图片进行示例性说明，这些示例性说明并不构成对实施例的限定，附图中具有相同参考数字标号的元件表示为类似的元件，除非有特别申明，附图中的图不构成比例限制。
图1是现有技术中发光器件的封装结构的示意图；
图2是第一实施例中发光器件的封装方法的流程示意图；
图3是第一实施例中步骤S4细化的流程示意图；
图4是第一实施例中发光器件的封装结构的示意图；
图5是第一实施例中发光器件以及芯片合封的结构示意图；
图6是第二实施例中发光器件的封装结构的示意图；
图7是第三实施例中步骤S4细化的流程示意图；
图8是第三实施例中发光器件的封装结构的示意图；
图9是第四实施例中发光器件的封装结构的示意图；
图10是第四实施例中发光器件以及芯片合封的结构示意图。
具体实施方式
为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本申请部分实施例进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。
本申请第一实施方式涉及一种发光器件的封装方法，具体流程如图2所示，详述如下：
S1，提供一基底。
具体地说，基底可以为硅、二氧化硅、陶瓷、有机材料或半导体材料(砷化镓、碳化硅或氮化硅)的基底，能够保证基底具有良好的散热性能。其中，基底的厚度可以根据需求(如发光器件的尺寸)进行选择、设计，常规选择在150微米至750微米之间。
S2，在基底内制作沉孔。
具体地说，在基底上通过蚀刻、激光、机钻孔或者注塑等工艺在基底内加工出所需的沉孔。其中，沉孔的尺寸为发光器件尺寸与贴合公差之和，沉孔的深度为发光器件厚度与贴合胶水或电镀金属的厚度之和。
S3，将发光器件埋入沉孔。
具体地说，将事先经研磨、切割至指定尺寸的发光器件(晶圆级的发光器件出厂时都是整片8寸或12寸的晶圆，需要通过研磨和切割将晶圆加工成单 颗的发光器件)放入沉孔中，并用水胶、固态胶等具有粘合性能的物质实现发光器件的固定。在实际操作时，也可以直接通过电镀金属结合回流焊的方式实现发光器件的固定，本实施例并不对发光器件的固定方式做任何限定。其中，发光器件可以为半导体发光器件，如，发光二极管LED(Light Emitting Diode，简称“LED”)、垂直腔面发射激光器VCSEL(Vertical Cavity Surface Emitting Laser，简称“VCSEL”)等发光体。
S4，在基底上制作扇出式封装的焊盘引出结构，将发光器件的焊盘引出至基底外轮廓面，并露出发光器件的发光区域。
本实施方式中，扇出式封装的焊盘引出结构为重布线结构，具体实现步骤如图3所示，步骤S4包括四个子步骤，分别为：
子步骤S410，在基底的正面制作用于遮光和/或绝缘的功能涂层，并在功能涂层与发光器件的焊盘的接触区域上制作开窗。
具体地说，可以使用喷涂、旋涂、贴膜、丝印等有机镀膜工艺实现功能涂层的涂布，而后再通过曝光、显影的方式在功能涂层与发光器件的焊盘的接触区域制作开窗，将发光器件的焊盘露出。其中，功能涂层具备遮光功能，还是绝缘功能，或者遮光功能与绝缘功能并存，可以根据实际需求进行选择。
子步骤S420，在功能涂层上制作金属层。
具体地说，金属层的加工制作可使用溅镀、电镀、蒸镀等金属镀膜工艺，材料可使用铝、铜、镍、银、金等有良好导电性的金属。
子步骤S430，在金属层上制作保护涂层，并露出发光器件的发光区域。
具体地说，可以使用喷涂、旋涂、贴膜、丝印等有机镀膜工艺实现保护涂层的涂布，而后再通过曝光、显影的方式制作开窗，将发光器件的发光区域 露出。也就是说，可以先在金属层上制作具有感光特性的保护涂层，然后对发光器件的发光区域进行曝光，并利用显影液对发光区域进行清洗，实现发光器件的发光区域露出，完成保护涂层的制作。其中，保护涂层可以由有机绝缘材料，以实现封装结构的耐磨、耐腐蚀、绝缘等。
需要说明的是，在制作功能涂层、金属层和保护涂层时，每制作一层，对该层上发光器件的发光区域对应位置进行一次曝光、显影，将发光器件的发光区域露出。
子步骤S440，在保护涂层上制作开窗，暴露出部分金属层，将发光器件的焊盘牵引至暴露出的该部分金属层。
具体地说，通过曝光、显影的方式在保护涂层的指定位置制作开窗，暴露出部分金属层。其中，指定位置为结合发光器件所需安装的电子设备的内部结构进行预设。
需要注意的是，子步骤S430以及子步骤S440可以合并为一个步骤进行实施，即，同时对保护涂层上发光器件的发光区域以及指定位置进行曝光、显影，以制作开窗，将发光器件的发光区域露出，并暴露出部分金属层。并且，不难看出，上述步骤不仅实现了发光器件的焊盘引出，而且在基底上制作的功能涂层具备绝缘功能以及遮光功能时，功能涂层能够实现发光器件光学信息的调整(如，控制光斑大小，控制出光角度等)，并降低发光器件的光损耗，功能涂层能够避免通向发光器件的工作电流经由焊盘引出结构部分漏向至基底，被基底所损耗的情况，即，避免了漏电。
图4是根据本申请实施例中的封装方法所获取的发光器件的封装结构。其中，基底20内设有沉孔，发光器件10位于沉孔内，焊盘引出结构30用于将 发光器件10的焊盘牵引至基底20外轮廓面，并露出发光器件10的发光区域。其中，焊盘引出结构30为重布线结构，由功能涂层310、金属层320以及保护涂层330构成，功能涂层310、金属层320以及保护涂层330的结构如图所示，且功能涂层310、金属层320以及保护涂层330的厚度为微米级(具体厚度依实际使用需求而定，10微米或几百微米均有可能)。不难看出，焊盘引出结构30主要通过金属层320将发光器件10的焊盘牵引出基底外轮廓面。
具体地说，重布线结构式的焊盘引出结构30能够令基底的露铜区与发光器件的焊盘同侧，实现了焊盘的同向引出。这种焊盘引出结构30可以实现封装结构的直接组装，即，无需对电子设备的电路板、对应于发光器件的开口做任何调整。
需要注意的是，上述所举例的在基底内制作的沉孔为1个。在实际操作时，基底内制作的沉孔也可以大于1个。也就是说，在执行步骤S1时，制作多个沉孔，并在沉孔完成制作后，将光电转换器件埋入制作的某一个沉孔内。这样，在后续执行步骤S4时，还包括光电转换器件的焊盘引出结构的制作，且发光器件的焊盘引出结构和光电转换器件的焊盘引出结构互连，从而省去了后续发光器件与光电转换器件的连接操作，简化了组装流程，应用范围较广。其中，光电转换器件与发光器件合封时，功能涂层的遮光功能不仅可以实现发光器件光学信息的调整，而且能够避免光电转换器件的逻辑运算区域被自然光线干扰，保证了器件的灵敏度。
如图5所示，给出了基底20内沉孔为2个时所实现的发光器件10与光电转换器件40合封的结构示意。其中，光电转换器件40可以为光电二极管PD(photo diode，简称“PD”)芯片或影像传感类芯片等现有应用较为普遍的芯片。 其中，光电转换器件40为PD芯片、发光器件10为红外发光二极管时，合封能实现距离感应器的功能；光电转换器件40为影像传感类芯片、发光器件10为垂直腔面发射激光器时，合封能实现立体识别的功能。
本实施例相对于现有技术而言，发光器件被埋入基底中，基底本身就能实现发光器件的良好固定和保护，从而不仅无需额外地再设置保护罩进行保护，实现了发光器件的封装结构体积更小、更轻薄的目的，而且发光器件能够实现立体散热，散热面积较大，实现了提高散热效率的目的。同时，制作扇出式封装的焊盘引出结构时，若功能涂层既具备遮光功能，又具备绝缘功能，则可以实现发光器件的光学信息调整，以及绝缘保护，并且，扇出式封装引出焊盘相比于传统的打线工艺而言，金属线路更短，从而能够降低金属线路上的功耗，实现降低发光器件封装结构的功耗的目的。
本申请第二实施例提供了一种发光器件的封装方法。第二实施例在第一实施例的基础上加以改进，主要改进之处在于：在本申请第二实施例中，还在暴露出的金属层上制作焊点，能够便于后续封装结构的安装。
具体地说，在执行S440后，在暴露出的部分金属层上制作焊点。如，通过植球、印锡、镀锡、镀铜柱等工艺做在开窗处的金属表面制作焊点。
如图6所示，为本实施例中发光器件的封装方法所获取的发光器件的封装结构，相比于第一实施例而言，焊盘引出结构30多出了焊点340。由于焊点340的存在，在对本实施例中的发光器件的封装结构进行组装时，可以直接使用表面贴装技术进行封装结构的安装、固定，操作便捷，且效率较高。
本申请第三实施例提供了一种发光器件的封装方法。第三实施例与第一实施例大致相同，主要区别之处在于：扇出式封装的焊盘引出结构不同，以下 进行具体说明：
具体地说，本实施例中的扇出式封装的焊盘引出结构与第一实施例不同，因此本实施例实质是步骤S4执行的操作略有不同。如图7所示，步骤S4包括：
子步骤S412，在基底上制作通孔。
具体地说，在基底上以蚀刻、激光或机钻孔的方式作业通孔。
子步骤S422，在基底的正面制作用于遮光和/或绝缘的功能涂层，并在通孔与功能涂层的接触位置，以及在功能涂层与发光器件的焊盘的接触区域上制作开窗。
具体地说，可以使用喷涂、旋涂、贴膜、丝印等有机镀膜工艺实现功能涂层的涂布，而后再通过曝光、显影的方式在功能涂层与通孔的接触位置、功能涂层与发光器件的焊盘的接触区域制作开窗，实现通孔以及发光器件焊盘的露出。
子步骤S432，在功能涂层上制作金属层，将发光器件的焊盘通过金属层和通孔牵引至基底的背面。
具体地说，金属层的加工制作可使用溅镀、电镀、蒸镀等金属镀膜工艺，材料可使用铝、铜、镍、银、金等有良好导电性的金属。
子步骤S442，在金属层上制作保护涂层，并露出发光器件的发光区域。
具体地说，可以使用喷涂、旋涂、贴膜、丝印等有机镀膜工艺实现保护涂层的涂布，而后再通过曝光、显影的方式制作开窗，将发光器件的发光区域露出。也就是说，可以先在金属层上制作具有感光特性的保护涂层，以便于对发光器件的发光区域进行曝光，并利用显影液对发光区域进行清洗，实现发光器件的发光区域露出，完成保护涂层的制作。
需要说明的是，在制作功能涂层、金属层和保护涂层时，每制作一层，对该层上发光器件的发光区域对应位置进行一次曝光、显影，将发光器件的发光区域露出。
不难看出，本实施例中扇出式封装的焊盘引出结构为重布线与通孔的组合结构。图8示出了本实施例中封装方法所获取的发光器件的封装结构，相比于第一实施例而言，焊盘引出结构30也包括功能涂层310、金属层320以及保护涂层330，只是焊盘引出结构30还包括通孔21，且功能涂层310、金属层320以及保护涂层330的具体实现略有不同。
本实施例中，重布线与通孔的组合结构作为焊盘引出结构30，能够令基底的露铜区与发光器件的焊盘异侧，实现了焊盘的反向引出。这种焊盘引出结构30提供了一种新的组装方向，为拓展发光器件的应用范围提供了基础。
需要注意的是，上述所举例的在基底内制作的沉孔为1个。在实际操作时，基底内制作的沉孔也可以大于1个。也就是说，在执行步骤S1时，制作多个沉孔，并在沉孔完成制作后，将光电转换器件埋入制作的某一个沉孔内。这样，在后续执行步骤S4时，还包括光电转换器件的焊盘引出结构的制作，且发光器件的焊盘引出结构和光电转换器件的焊盘引出结构互连，不仅操作便捷，而且应用范围较广。如图10所示，给出了基底内制作的沉孔为2个时，所实现的发光器件10与光电转换器件40合封的结构示意。其中，光电转换器件40可以为光电二极管PD芯片或影像传感类芯片等现有应用较为普遍的芯片。
值得一提的是，在发光器件10以及光电转换器件40合封时，还可以根据实际需求，设置基底上发光器件10的焊盘引出结构与光电转换器件40的焊盘引出结构异侧。如，发光器件10的焊盘引出结构为重布线结构，光电转换器 件40的焊盘引出结构为重布线与通孔的组合结构。或者，发光器件10的焊盘引出结构为重布线与通孔的组合结构，光电转换器件40的焊盘引出结构为重布线结构。
本申请第四实施例提供了一种发光器件的封装方法。第四实施例在第三实施例的基础上加以改进，主要改进之处在于：在本申请第四实施例中，还在通孔21于基底的背面的开口处制作焊点，能够便于后续封装结构的安装。
具体地说，在执行S432后，还在基底的背面，通孔21的开口处制作焊点。如，通过植球、印锡、镀锡、镀铜柱等工艺做在开窗处的金属表面制作焊点。
如图9所示，为本实施例中发光器件的封装方法所获取的发光器件的封装结构，相比于第三实施例而言，焊盘引出结构30多出了焊点340。由于焊点340的存在，在对本实施例中的发光器件的封装结构进行组装时，可以直接使用表面贴装技术进行封装结构的安装、固定，操作便捷，且效率较高。
本申请第五实施例提供了一种发光器件的封装结构。本实施例所提及到的封装结构是利用第一实施例所提及到的封装方法实现的，如图4所示。发光器件的封装结构包括：发光器件10、基底20以及焊盘引出结构30。其中，基底20内设有沉孔，发光器件10位于沉孔内，焊盘引出结构30为重布线结构，焊盘引出结构30用于将发光器件10的焊盘牵引至基底20外轮廓面，并露出发光器件10的发光区域。
具体地说，基底20可以为硅、二氧化硅、陶瓷、有机材料或半导体材料(砷化镓、碳化硅或氮化硅)的基底，能够保证基底20具有良好的散热性能。其中，基底20的厚度可以根据需求进行选择、设计，常规选择在150微米至 750微米之间。
更具体地说，焊盘引出结构30由功能涂层310、金属层320以及保护涂层330构成。功能涂层310用于遮光和/或绝缘，位于基底20的正面，并在与发光器件10的焊盘的接触区域上设有开窗。金属层320用于通过接触区域上的开窗与发光器件10电性连接，位于功能涂层310上。保护涂层330用于保护金属层，保护涂层330位于金属层320上，且设有用于暴露出部分金属层的开窗。
不难看出，焊盘引出结构30主要是通过金属层320将发光器件10的焊盘牵引出。本实施例中的焊盘引出结构30能够令基底20的露铜区与发光器件的焊盘同侧，实现了焊盘的同向引出。这种焊盘引出结构30可以实现封装结构的直接组装，即，无需对电子设备的电路板、对应于发光器件的开口做任何调整。
需要注意的是，上述所举例的为基底20内的沉孔为1个的情况。在实际操作时，基底20内制作的沉孔也可以大于1个。也就是说，至少一个沉孔用于埋入发光器件，至少一个沉孔用于埋入光电转换器件，并且光电转换器件的焊盘引出结构也为扇出式封装的焊盘引出结构，发光器件的焊盘引出结构和光电转换器件的焊盘引出结构互连，应用范围较广。如图5所示，给出了基底20内制作的沉孔为2个时，所实现的发光器件10与光电转换器件40合封的结构示意。其中，光电转换器件40可以为光电二极管PD芯片或影像传感类芯片等应用较为普遍的芯片。
本申请第六实施例提供了一种发光器件的封装结构。本实施例所提及到的封装结构是利用第二实施例所提及到的封装方法实现的，如图6所示，相比于第五实施例而言，本实施例中的焊盘引出结构30多出了焊点340。由于焊点 340的存在，在对本实施例中的发光器件的封装结构进行组装时，可以直接使用表面贴装技术进行封装结构的安装、固定，操作便捷，且效率较高。
本申请第七实施例提供了一种发光器件的封装结构。本实施例所提及到的封装结构是利用第三实施例所提及到的封装方法实现的，如图8所示。本实施例相比于第五或第六实施例而言，主要区别在于焊盘引出结构30略有不同。本实施例中的焊盘引出结构30为重布线与通孔的组合结构。
具体地说，焊盘引出结构30包括：贯通基底20的通孔21、功能涂层310、金属层320以及保护涂层330。其中，功能涂层310位于基底20的正面，用于遮光和/或绝缘，功能涂层310在通孔21与功能涂层310的接触位置，以及在功能涂层310与发光器件10的焊盘的接触区域上设有开窗。金属层320位于功能涂层310上，用于通过开窗与发光器件10和通孔21电性连接，将发光器件的焊盘牵引至基底20的背面。保护涂层330用于保护金属层320，位于金属层320上。
不难看出，本实施例中的焊盘引出结构30能够令基底20的露铜区与发光器件10的焊盘异侧，实现了焊盘的反向引出。这种焊盘引出结构30为提供了一种新的组装方向，为拓展发光器件10的应用范围提供了基础。
需要注意的是，上述所举例的为基底20内的沉孔为1个的情况。在实际操作时，基底20内制作的沉孔也可以大于1个。也就是说，至少一个沉孔用于埋入发光器件10，至少一个沉孔用于埋入光电转换器件40，并且光电转换器件40的焊盘引出结构也为扇出式封装的焊盘引出结构，发光器件10的焊盘引出结构和光电转换器件40的焊盘引出结构互连，从而省去了后续发光器件10与光电转换器件40的连接操作，简化了组装流程，应用范围较广。如图10所示， 给出了基底20内制作的沉孔为2个时，所实现的发光器件10与光电转换器件40合封的结构示意。其中，光电转换器件40可以为光电二极管PD芯片或影像传感类芯片等现有应用较为普遍的芯片。
本申请第八实施例提供了一种发光器件的封装结构。本实施例所提及到的封装结构是利用第四实施例所提及到的封装方法实现的，如图9所示，相比于第七实施例而言，本实施例中的焊盘引出结构30多出了焊点340。由于焊点340的存在，在对本实施例中的发光器件的封装结构进行组装时，可以直接使用表面贴装技术进行封装结构的安装、固定，操作便捷，且效率较高。
本申请第九实施例提供了一种电子设备，包括上述实施例所提及到的发光器件的封装结构。其中，电子设备可以为手机、平板电脑、蓝牙耳机等涉及使用发光器件的电子设备。
本领域的普通技术人员可以理解，上述各实施例是实现本申请的具体实施例，而在实际应用中，可以在形式上和细节上对其作各种改变，而不偏离本申请的精神和范围。

Claims (17)

  1. 一种发光器件的封装方法，其特征在于，包括：
    提供一基底；
    在所述基底内制作沉孔；
    将发光器件埋入所述沉孔内；
    在所述基底上制作扇出式封装的焊盘引出结构，将所述发光器件的焊盘牵引至基底外轮廓面，并露出所述发光器件的发光区域。
  2. 根据权利要求1所述的发光器件的封装方法，其特征在于，所述扇出式封装的焊盘引出结构为重布线结构。
  3. 根据权利要求2所述的发光器件的封装方法，其特征在于，所述在所述基底上制作扇出式封装的焊盘引出结构，将所述发光器件的焊盘牵引至基底外轮廓面，具体包括：
    在所述基底的正面制作用于遮光和/或绝缘的功能涂层，并在所述功能涂层与所述发光器件的焊盘的接触区域上制作开窗；
    在所述功能涂层上制作金属层；
    在所述金属层上制作保护涂层，并露出所述发光器件的发光区域；
    在所述保护涂层上制作开窗，暴露出部分所述金属层，将所述发光器件的焊盘牵引至暴露出的部分所述金属层。
  4. 根据权利要求3所述的发光器件的封装方法，其特征在于，还包括：
    在暴露出的部分所述金属层上制作焊点。
  5. 根据权利要求1所述的发光器件的封装方法，其特征在于，所述扇出式封装的焊盘引出结构为重布线与通孔的组合结构。
  6. 根据权利要求5所述的发光器件的封装方法，其特征在于，所述在所述基底上制作扇出式封装的焊盘引出结构，将所述发光器件的焊盘牵引至基底外轮廓面，具体包括：
    在所述基底上制作通孔；
    在所述基底的正面制作用于遮光和/或绝缘的功能涂层，并在所述通孔与所述功能涂层的接触位置，以及在所述功能涂层与所述发光器件的焊盘的接触区域上制作开窗；
    在所述功能涂层上制作金属层，将所述发光器件的焊盘通过所述金属层和所述通孔牵引至所述基底的背面；
    在所述金属层上制作保护涂层，并露出所述发光器件的发光区域。
  7. 根据权利要求6所述的发光器件的封装方法，其特征在于，还包括：
    在所述通孔在所述基底的背面的开口处制作焊点。
  8. 根据权利要求1至7中任一项所述的发光器件的封装方法，其特征在于，在所述基底内制作的沉孔大于1个，其中，至少一个沉孔用于埋入发光器件，至少一个沉孔用于埋入光电转换器件；
    在所述基底上制作的扇出式封装的焊盘引出结构，包括所述发光器件的焊盘引出结构和所述光电转换器件的焊盘引出结构，并且，所述发光器件的焊盘引出结构和所述光电转换器件的焊盘引出结构互连。
  9. 根据权利要求8所述的发光器件的封装方法，其特征在于，所述光电转换器件为光电二极管PD芯片或影像传感类芯片。
  10. 一种发光器件的封装结构，其特征在于，包括：
    基底，所述基底内设有沉孔；
    发光器件，所述发光器件位于所述沉孔内；
    焊盘引出结构，所述焊盘引出结构为扇出式封装的焊盘引出结构，用于将所述发光器件的焊盘牵引至基底外轮廓面，并露出所述发光器件的发光区域。
  11. 根据权利要求10所述的发光器件的封装结构，其特征在于，所述扇出式封装的焊盘引出结构为重布线结构；或者，所述扇出式封装的焊盘引出结构为重布线与通孔的组合结构。
  12. 根据权利要求11所述的发光器件的封装结构，其特征在于，所述扇出式封装的焊盘引出结构为重布线结构，所述重布线结构包括：
    用于遮光和/或绝缘的功能涂层，所述功能涂层位于所述基底的正面，并在与所述发光器件的焊盘的接触区域上设有开窗；
    用于通过所述接触区域上的开窗与所述发光器件电性连接的金属层，所述金属层位于所述功能涂层上；
    用于保护所述金属层的保护涂层，所述保护涂层位于所述金属层上，且设有用于暴露出部分所述金属层的开窗。
  13. 根据权利要求11所述的发光器件的封装结构，其特征在于，所述扇出式封装的焊盘引出结构为重布线与通孔的组合结构，所述重布线与通孔的组合结构包括：
    贯通所述基底的通孔；
    用于遮光和/或绝缘的功能涂层，所述功能涂层位于所述基底的正面，并在所述通孔与所述功能涂层的接触位置，以及在所述功能涂层与所述发光器件的焊盘的接触区域上设有开窗；
    用于通过所述开窗与所述发光器件和所述通孔电性连接的金属层，所述金属层 位于所述功能涂层上，将所述发光器件的焊盘牵引至所述基底的背面；
    用于保护所述金属层的保护涂层，所述保护涂层位于所述金属层上。
  14. 根据权利要求10至13中任一项所述的发光器件的封装结构，其特征在于，所述基底为以下任意一种材料的基底：
    硅Si、二氧化硅SiO 2、陶瓷、有机材料、半导体材料。
  15. 根据权利要求14所述的发光器件的封装结构，其特征在于，所述半导体材料包括：
    砷化镓、碳化硅、氮化硅。
  16. 根据权利要求10至13中任一项所述的发光器件的封装结构，其特征在于，还包括：光电转换器件和光电转换器件的焊盘引出结构；
    所述基底内设有的沉孔数量大于1个，其中，至少一个沉孔用于埋入发光器件，至少一个沉孔用于埋入所述光电转换器件；
    所述光电转换器件的焊盘引出结构为扇出式封装的焊盘引出结构，所述发光器件的焊盘引出结构和所述芯片的焊盘引出结构互连。
  17. 一种电子设备，其特征在于，包括如权利要求11至16中任一项所述的发光器件的封装结构。
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