WO2020031939A1 - Film métallisé et condensateur à film - Google Patents

Film métallisé et condensateur à film Download PDF

Info

Publication number
WO2020031939A1
WO2020031939A1 PCT/JP2019/030650 JP2019030650W WO2020031939A1 WO 2020031939 A1 WO2020031939 A1 WO 2020031939A1 JP 2019030650 W JP2019030650 W JP 2019030650W WO 2020031939 A1 WO2020031939 A1 WO 2020031939A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
metal
metallized
band gap
oxide
Prior art date
Application number
PCT/JP2019/030650
Other languages
English (en)
Japanese (ja)
Inventor
洋成 出口
紀明 松村
正義 藤根
Original Assignee
日新電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日新電機株式会社 filed Critical 日新電機株式会社
Publication of WO2020031939A1 publication Critical patent/WO2020031939A1/fr

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/32—Wound capacitors

Definitions

  • the present invention relates to a metallized film including a metal film on a surface of a plastic film, and a film capacitor.
  • a film capacitor (also referred to as a metallized film capacitor, a metallized film capacitor, a metallized organic film capacitor, etc.) formed by winding a metallized film produced by evaporating a metal on the surface of a plastic film is known.
  • the film capacitor has a smaller capacity than the ceramic capacitor and the electrolytic capacitor, it has a feature that it can cope with a high voltage, has a good high-frequency characteristic, and has little dielectric loss. Therefore, film capacitors are widely used in electronic applications, in-vehicle applications, industrial applications, and the like.
  • Patent Document 1 a film capacitor in which aluminum is deposited as a metal on the surface of a plastic film
  • Patent Document 2 a film capacitor in which zinc is deposited as a metal on the surface of a plastic film
  • Patent Document 3 a film capacitor in which an alloy of aluminum and zinc is deposited on the surface of a polypropylene film
  • the above-described conventional technology cannot provide a film capacitor that can achieve (simultaneously achieve) both use at a higher electric field and long life even under use conditions with a large ripple current. There is a problem.
  • One embodiment of the present invention is to use a higher electric field (potential gradient) while miniaturizing (compacting), reducing weight, and reducing cost, and to have a long life even under a use condition in which a ripple current is large. It is an object of the present invention to provide a film capacitor capable of satisfying (simultaneously achieving) and a metalized film constituting the film capacitor.
  • the present invention includes the following inventions ⁇ 1> to ⁇ 8>.
  • a film made of a first metal having an oxide band gap of 5 eV or more and a film made of a second metal having an oxide band gap of less than 5 eV are formed on one surface of a plastic film.
  • a metallized film comprising: a third metal film having an oxide band gap of 5 eV or more on the other surface of the plastic film.
  • ⁇ 2> a film made of a first metal having an oxide band gap of 5 eV or more, a film made of a second metal having an oxide band gap of less than 5 eV, and a film of an oxide on one surface of the plastic film; And a film made of a third metal having a band gap of 5 eV or more in this order.
  • the first metal and the third metal are at least one metal selected from the group consisting of aluminum, magnesium, and metal silicon, respectively.
  • the metallized film as described. ⁇ 5> The metallized film according to any one of ⁇ 1> to ⁇ 4>, wherein the total film resistance of the film made of the first to third metals is 6 to 60 ⁇ / ⁇ .
  • ⁇ 6> The metallized film according to any one of ⁇ 1> to ⁇ 5>, wherein the film made of the first to third metals is formed by vapor deposition.
  • ⁇ 7> A film capacitor formed by winding the metallized film according to any one of ⁇ 1> to ⁇ 6>.
  • One surface of a plastic film includes, in this order, a film made of a first metal having an oxide band gap of 5 eV or more and a film made of a second metal having an oxide band gap of less than 5 eV.
  • a first metallized film comprising: a first metallized film; and a second metallized film including a film made of a third metal having an oxide band gap of 5 eV or more on one surface of the plastic film.
  • a film capacitor formed by winding a metallized film includes a film made of a first or third metal having an oxide band gap of 5 eV or more on a surface of a plastic film.
  • a film made of the first or third metal an oxide that is a wide-gap insulator is formed on the surface (interface) on the plastic film side when the film is formed. Therefore, injection of the carrier into the plastic film can be prevented, and the carrier behavior in the plastic film is reduced. Therefore, a film capacitor has a high breakdown voltage.
  • the film capacitor includes a film made of a second metal having an oxide band gap of less than 5 eV, and the film serves as an electric circuit when energized.
  • 1 is a schematic cross-sectional view illustrating a configuration of a metallized film according to Embodiment 1 of the present invention. It is an outline sectional view showing the composition of the metallized film concerning Embodiment 2 of the present invention. It is an outline sectional view showing the composition of the metallized film concerning Embodiment 3 of the present invention. 1 is a schematic cross-sectional view illustrating a configuration of a film capacitor according to one embodiment of the present invention.
  • a metallized film 5 according to Embodiment 1 of the present invention includes, on one surface of a plastic film 1, a film 2 made of a first metal having an oxide band gap of 5 eV or more; A film 3 made of a second metal having an oxide band gap of less than 5 eV in this order, and the other surface of the plastic film 1 is made of a third metal having an oxide band gap of 5 eV or more.
  • a membrane 4 is provided.
  • the plastic film 1 As the plastic film 1 according to one embodiment of the present invention, a general plastic film used for a conventional metallized film can be used. Specifically, the plastic film 1 is preferably a biaxially stretched polypropylene (PP) film, a polyethylene terephthalate (PET) film, or the like. The plastic film 1 may be a laminate.
  • PP polypropylene
  • PET polyethylene terephthalate
  • the thickness of the plastic film 1 is not particularly limited, but is preferably 1 ⁇ m to 20 ⁇ m, and more preferably 2 ⁇ m to 10 ⁇ m.
  • the size of the plastic film 1 may be set according to the use of the film capacitor, the width is preferably 10 mm to 150 mm, more preferably 40 mm to 120 mm, and the length is preferably 10 m to 2000 m, and 100 m to 1000 m. Is more preferred. That is, the plastic film 1 is preferably long so that the metallized film 5 can be wound to form a film capacitor.
  • various metals constituting a metallized film can be classified into a metal forming an oxide having a band gap of 5 eV or more and a metal forming an oxide having a band gap of less than 5 eV.
  • An oxide having a band gap of 5 eV or more is a wide-gap insulator.
  • An oxide having a band gap of less than 5 eV is a narrow-gap electronic conductor.
  • a metal forming an oxide having a band gap of 5 eV or more is used as the first metal and the third metal, and an oxide having a band gap of less than 5 eV is used.
  • the metal to be formed is used as the second metal.
  • the first metal and the third metal are preferably at least one metal selected from the group consisting of aluminum, magnesium, and metallic silicon, more preferably aluminum and magnesium, and even more preferably aluminum.
  • the band gap of aluminum oxide (Al 2 O 3 ) is 8 eV
  • the band gap of magnesium oxide (MgO) is 5.5 eV
  • the band gap of metal silicon oxide (SiO 2 ) is 7 eV. is there.
  • the films 2 and 4 when the films 2 and 4 are formed, an oxide that is a wide gap insulator is formed on the surface (interface) on the plastic film 1 side. It is formed. Therefore, injection of the carrier into the plastic film 1 can be prevented, and the carrier behavior in the plastic film 1 is reduced.
  • the first metal and the third metal may be the same or different from each other, but are preferably the same.
  • the film 2 made of the first metal and the film 4 made of the third metal may be a film made of a single metal, or may be a film made of a plurality of types of metals. It is preferably a film made of a single metal.
  • the film 2 made of the first metal and the film 4 made of the third metal may each be a single layer or a plurality of layers (laminated body), but it is preferably one layer. .
  • the second metal is preferably at least one metal selected from the group consisting of zinc, tin, and indium, more preferably zinc and tin, and even more preferably zinc.
  • the band gap of zinc oxide (ZnO) is 3 eV
  • the band gap of tin oxide (SnO 2 ) is 3 eV
  • the band gap of indium oxide (In 2 O 3 ) is 3 eV.
  • the film 3 made of the second metal gradually forms an oxide from its end (exposed portion) by an anodic oxidation reaction when a ripple current flows, but the oxide is a narrow gap electronic conductor,
  • the film 3 made of the second metal maintains the function as an electrode.
  • the film 3 made of the second metal may be a film made of a single metal or a film made of a plurality of types of metals, but is preferably a film made of a single metal. Further, the film 3 made of the second metal may be a single layer or a plurality of layers (laminated body), but is preferably a single layer.
  • the method for forming the film 2 made of the first metal, the film 3 made of the second metal, and the film 4 made of the third metal is not particularly limited, but is preferably formed by vapor deposition. These films 2 to 4 can be formed by vacuum evaporation using a known evaporation apparatus.
  • the total film resistance of the active portions (portions functioning as electrodes) in the films 2 to 4 made of the first to third metals is not particularly limited, but is preferably 6 to 60 ⁇ / ⁇ ( ⁇ square). , 40 to 50 ⁇ / ⁇ .
  • the total thickness of the first to third metal films 2 to 4 is about 3 nm to 20 nm, preferably about 5 nm to 8 nm (about 50 metal atom layers).
  • electrodes are formed on the end face of the plastic film 1 by, for example, thermal spraying. There is a portion where the films 2 to 4 made of metal are not formed (the width is about 2 mm).
  • the metallized film 5 includes, on one surface of the plastic film 1, the film 2 made of the first metal having an oxide band gap of 5 eV or more, And a film 3 made of a second metal having a band gap of less than 5 eV in this order, and a film 4 made of a third metal having an oxide band gap of 5 eV or more is provided on the other surface of the plastic film 1. It has. Therefore, according to one embodiment of the present invention, both use in a higher electric field (potential gradient), which has a trade-off relationship with each other, and long life even in a use condition where a ripple current is large are compatible. It is possible to provide a metallized film 5 constituting a film capacitor that can be achieved at the same time.
  • the metallized film 6 according to Embodiment 2 of the present invention includes a film 2 made of a first metal having an oxide band gap of 5 eV or more, and a film 2 formed on one surface of a plastic film 11.
  • a first metallized film including a film 3 made of a second metal having a band gap of less than 5 eV in this order, and a third metal having an oxide band gap of 5 eV or more on one surface of the plastic film 12.
  • a second metallized film having a film 4 made of That is, the metallized film according to one embodiment of the present invention may be composed of the two metallized films.
  • the materials of the plastic film 11 and the plastic film 12 may be the same or different from each other, but are preferably the same.
  • the plastic film 11 and the plastic film 12 may be a laminate.
  • the total thickness of the plastic films 11 and 12 may be the same as the thickness of the plastic film 1.
  • the size of the plastic films 11 and 12 may be the same as the size of the plastic film 1.
  • the metallized film 6 is formed by winding a first metallized film and a second metallized film with the surfaces of the plastic films 11 and 12 not having the films 2 to 4 in contact with each other. , Constituting a film capacitor. That is, the film capacitor formed by winding the metallized film 6 according to the second embodiment of the present invention includes a film 2 made of the first metal and a film 3 made of the second metal on one surface of the plastic film 11.
  • the metallized film 6 similarly to the metallized film 5 according to the first embodiment, it is used in a higher electric field (potential gradient) and has a long life even under use conditions in which a ripple current is large. It is possible to provide the metallized film 6 that constitutes a film capacitor capable of satisfying both of them (at the same time).
  • the metallized film 6 includes, on one surface of the plastic film 11, the first metallized film including the film 2 made of the first metal having an oxide band gap of 5 eV or more, and on one surface of the plastic film 12, A second metallized film including, in this order, a film 4 made of a third metal whose oxide has a band gap of 5 eV or more, and a film 3 made of a second metal whose oxide has a band gap of less than 5 eV. , May be configured.
  • a metallized film 7 according to Embodiment 3 of the present invention includes, on one surface of a plastic film 1, a film 2 made of a first metal having an oxide band gap of 5 eV or more, and an oxide A film 3 made of a second metal having a band gap of less than 5 eV, and a film 4 made of a third metal having a band gap of an oxide of 5 eV or more.
  • the metallized film 5 similarly to the metallized film 5 according to the first embodiment, it is used in a higher electric field (potential gradient) and has a long life even under use conditions in which a ripple current is large. It is possible to provide a metallized film 7 that constitutes a film capacitor capable of satisfying both of them (at the same time).
  • the metallized film 7 according to the third embodiment of the present invention forms a laminate of the films 2 to 4 made of the first to third metals on the plastic film 1, the films 2 to 4 For example, a pattern shape having a fuse function can be formed.
  • the film capacitor formed by winding the metallized film 7 allows the films 2 to 4 to be gasified by the fuse function even when dielectric breakdown occurs. And the electrode at the defective portion can be cut off (recovery of insulation). That is, the film capacitor can have self-healing properties (self-healing).
  • the decrease in the capacity can be kept small, the life and the self-security can be improved, and the reliability is improved.
  • the film capacitor 10 according to one embodiment of the present invention is configured by winding two metallized films according to one embodiment of the present invention or two sets thereof, and then winding. I have.
  • the film capacitor 10 according to one aspect of the present invention includes, for example, the metalized film 5 according to Embodiment 1 of the present invention, the metalized film 6 according to Embodiment 2 of the present invention, or the implementation of the present invention. It is configured by winding two or two sets of the metallized film 7 according to Embodiment 3.
  • the films 2 to 4 made of the first to third metals are sandwiched by the plastic film 1, and the film capacitor 10 is made up of the plastic film 1 / film 2 / film 3 / film 4 / plastic film 1
  • the film 2 made of the first metal or the film 4 made of the third metal when the films 2 and 4 are formed, an oxide that is a wide gap insulator is formed on the surface (interface) on the plastic film 1 side. It is formed. Therefore, injection of the carrier into the plastic film 1 can be prevented, and the carrier behavior in the plastic film 1 is reduced. Therefore, the breakdown voltage of the film capacitor 10 increases.
  • the ripple current flows the film 2 made of the first metal or the film 4 made of the third metal is converted into an oxide 2a, 4a which is an insulator having a wide gap by an anodic oxidation reaction. ), Thereby gradually losing the function as an electrode.
  • the film 3 made of the second metal gradually forms an oxide 3a from its end (exposed portion) by an anodic oxidation reaction when a ripple current flows, but the oxide 3a is a narrow gap electronic conductor. Therefore, it becomes an electric circuit when energized, and maintains the function as an electrode. Therefore, the film capacitor 10 is prevented from decreasing in capacity even under the use condition where the ripple current is large.
  • a film capacitor 10 can be provided.
  • Example 1 A metallized film corresponding to the metallized film 5 according to Embodiment 1 of the present invention was produced. Specifically, a biaxially stretched polypropylene film (width 50 mm, length 55 m, thickness 5 ⁇ m) was used as the plastic film 1. As the first to third metals, aluminum, zinc, and aluminum were selected in this order. That is, the metal deposited on the plastic film had a three-layer structure of aluminum / zinc / aluminum. The total film resistance of the active portions (portions functioning as electrodes) in the films 2 to 4 made of the first to third metals was 50 ⁇ / ⁇ . Then, the metallized film was wound to produce a film capacitor. The capacitance of the film capacitor was 20 ⁇ F.
  • the produced film capacitor was evaluated based on a dielectric breakdown voltage in a DC breakdown test and a capacity reduction rate in an AC power application test.
  • the insulation breakdown test was performed in accordance with JIS C # 2151 (Testing method for plastic film for electric use), section 17.2.2, and the voltage rising rate was 100 V / sec.
  • the applied voltage was set to 60 Hz and 350 Vrms and applied for 1000 hours.
  • the produced film capacitor had a dielectric breakdown voltage of 3000 V and a capacity reduction rate of 1%.
  • Example 1 A metallized film corresponding to the first metallized film according to Embodiment 2 of the present invention was produced. Specifically, the same biaxially stretched polypropylene film as in Example 1 was used as the plastic film 11. Aluminum and zinc were selected in this order as the first and second metals. That is, the metal deposited on the plastic film had a two-layer structure of aluminum / zinc. The total film resistance of the active portions in the films 2 and 3 made of the first and second metals was 50 ⁇ / ⁇ . Then, the metallized film was wound to produce a film capacitor. The capacitance of the film capacitor was 20 ⁇ F.
  • the produced film capacitor was evaluated in the same manner as in Example 1.
  • the dielectric breakdown voltage of the produced film capacitor was 2400 V, and the capacity reduction rate was 1%.
  • Example 2 A metallized film corresponding to the second metallized film according to Embodiment 2 of the present invention was produced. Specifically, the same biaxially stretched polypropylene film as in Example 1 was used as the plastic film 12. Aluminum was selected as the third metal. The film resistance of the active portion in the film 4 made of the third metal was 50 ⁇ / ⁇ . Then, the metallized film was wound to produce a film capacitor. The capacitance of the film capacitor was 20 ⁇ F.
  • the produced film capacitor was evaluated in the same manner as in Example 1. As a result, the produced film capacitor had a breakdown voltage of 3000 V and a capacity reduction rate of 5%.
  • Example 1 According to the results of Example 1 and Comparative Examples 1 and 2, according to one embodiment of the present invention, there is a trade-off relationship between use in a higher electric field (potential gradient) and use conditions with a large ripple current. It has been found that a film capacitor can be provided that can achieve (and simultaneously achieve) long life.
  • the film capacitor according to the present invention can be widely used as a DC capacitor in electronic applications, in-vehicle applications, industrial applications, and the like.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Laminated Bodies (AREA)

Abstract

L'invention concerne un condensateur à film qui est susceptible à la fois de permettre une utilisation avec un champ électrique ayant une intensité supérieure et d'obtenir une longévité élevée même dans des conditions d'utilisation dans lesquelles il y a un courant d'ondulation supérieur. Un condensateur à film selon la présente invention est formé par enroulement d'un film métallisé (5) : qui comprend un film (2) formé d'un premier métal ayant une bande interdite d'oxyde de 5 eV ou plus et un film (3) formé d'un second métal ayant une bande interdite d'oxyde inférieure à 5 eV, dans cet ordre, sur l'une des surfaces d'un film plastique (1) ; et qui comprend un film (4) formé d'un troisième métal ayant une bande interdite d'oxyde de 5 eV ou plus sur l'autre surface du film plastique (1).
PCT/JP2019/030650 2018-08-08 2019-08-05 Film métallisé et condensateur à film WO2020031939A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018149669A JP7143674B2 (ja) 2018-08-08 2018-08-08 金属化フィルムおよびフィルムコンデンサ
JP2018-149669 2018-08-08

Publications (1)

Publication Number Publication Date
WO2020031939A1 true WO2020031939A1 (fr) 2020-02-13

Family

ID=69414985

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/030650 WO2020031939A1 (fr) 2018-08-08 2019-08-05 Film métallisé et condensateur à film

Country Status (2)

Country Link
JP (1) JP7143674B2 (fr)
WO (1) WO2020031939A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03106722U (fr) * 1990-02-19 1991-11-05
JPH09111439A (ja) * 1995-10-12 1997-04-28 Toray Ind Inc 蒸着フィルムおよびそれを用いてなるコンデンサ
JPH10189382A (ja) * 1996-12-20 1998-07-21 Mitsubishi Shindoh Co Ltd 亜鉛蒸着フィルムおよび金属化フィルムコンデンサ
WO2002101770A1 (fr) * 2001-06-08 2002-12-19 Matsushita Electric Industrial Co., Ltd. Condensateur de fil metallise

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03106722U (fr) * 1990-02-19 1991-11-05
JPH09111439A (ja) * 1995-10-12 1997-04-28 Toray Ind Inc 蒸着フィルムおよびそれを用いてなるコンデンサ
JPH10189382A (ja) * 1996-12-20 1998-07-21 Mitsubishi Shindoh Co Ltd 亜鉛蒸着フィルムおよび金属化フィルムコンデンサ
WO2002101770A1 (fr) * 2001-06-08 2002-12-19 Matsushita Electric Industrial Co., Ltd. Condensateur de fil metallise

Also Published As

Publication number Publication date
JP2020031075A (ja) 2020-02-27
JP7143674B2 (ja) 2022-09-29

Similar Documents

Publication Publication Date Title
JP5131193B2 (ja) 金属化フィルムコンデンサ
JP3870932B2 (ja) 金属化フィルムコンデンサ
WO2019082929A1 (fr) Condensateur à film, condensateur de type à connexion, et onduleur et véhicule électrique dans lesquels sont utilisés lesdits condensateurs
JP6687373B2 (ja) フィルムコンデンサ、連結型コンデンサと、これを用いたインバータおよび電動車輌
JP4915947B2 (ja) 金属化フィルムコンデンサ
JP2006269727A (ja) 金属化フィルムコンデンサ
JP2006269726A (ja) 金属化フィルムコンデンサ
JP2015164188A (ja) 高静電容量のコンデンサ用巻回型積層体、及びそれを用いた積層巻回型コンデンサ
WO2020031939A1 (fr) Film métallisé et condensateur à film
JP2009277830A (ja) 金属化フィルムコンデンサ
WO2020031940A1 (fr) Film métallisé et condensateur à film
US9023186B1 (en) High performance titania capacitor with a scalable processing method
JP2009200378A (ja) 複合型金属化フィルムコンデンサ
JP2005085870A (ja) 金属化フィルムコンデンサ
JP2014107394A (ja) 金属化フィルムコンデンサ
JP2005093516A (ja) 金属化フィルムコンデンサ及びインバータ電源回路
US20120075769A1 (en) High temperature high current metalized film capacitor
JP4876649B2 (ja) 直流金属化フィルムコンデンサ
JP2015216312A (ja) フィルムコンデンサ
JP2002367854A (ja) 両面金属化フィルムコンデンサ
JP2020053564A (ja) 金属化フィルム
JP5824654B2 (ja) 金属化フィルムコンデンサ
JP5903647B2 (ja) 金属化フィルムコンデンサ
JP6742898B2 (ja) 金属化フィルムコンデンサの製造方法
JP2008294431A (ja) 金属化フィルムコンデンサ

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19847486

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19847486

Country of ref document: EP

Kind code of ref document: A1