WO2020031939A1 - Metalized film and film capacitor - Google Patents

Metalized film and film capacitor Download PDF

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Publication number
WO2020031939A1
WO2020031939A1 PCT/JP2019/030650 JP2019030650W WO2020031939A1 WO 2020031939 A1 WO2020031939 A1 WO 2020031939A1 JP 2019030650 W JP2019030650 W JP 2019030650W WO 2020031939 A1 WO2020031939 A1 WO 2020031939A1
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Prior art keywords
film
metal
metallized
band gap
oxide
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PCT/JP2019/030650
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French (fr)
Japanese (ja)
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洋成 出口
紀明 松村
正義 藤根
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日新電機株式会社
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Publication of WO2020031939A1 publication Critical patent/WO2020031939A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/32—Wound capacitors

Definitions

  • the present invention relates to a metallized film including a metal film on a surface of a plastic film, and a film capacitor.
  • a film capacitor (also referred to as a metallized film capacitor, a metallized film capacitor, a metallized organic film capacitor, etc.) formed by winding a metallized film produced by evaporating a metal on the surface of a plastic film is known.
  • the film capacitor has a smaller capacity than the ceramic capacitor and the electrolytic capacitor, it has a feature that it can cope with a high voltage, has a good high-frequency characteristic, and has little dielectric loss. Therefore, film capacitors are widely used in electronic applications, in-vehicle applications, industrial applications, and the like.
  • Patent Document 1 a film capacitor in which aluminum is deposited as a metal on the surface of a plastic film
  • Patent Document 2 a film capacitor in which zinc is deposited as a metal on the surface of a plastic film
  • Patent Document 3 a film capacitor in which an alloy of aluminum and zinc is deposited on the surface of a polypropylene film
  • the above-described conventional technology cannot provide a film capacitor that can achieve (simultaneously achieve) both use at a higher electric field and long life even under use conditions with a large ripple current. There is a problem.
  • One embodiment of the present invention is to use a higher electric field (potential gradient) while miniaturizing (compacting), reducing weight, and reducing cost, and to have a long life even under a use condition in which a ripple current is large. It is an object of the present invention to provide a film capacitor capable of satisfying (simultaneously achieving) and a metalized film constituting the film capacitor.
  • the present invention includes the following inventions ⁇ 1> to ⁇ 8>.
  • a film made of a first metal having an oxide band gap of 5 eV or more and a film made of a second metal having an oxide band gap of less than 5 eV are formed on one surface of a plastic film.
  • a metallized film comprising: a third metal film having an oxide band gap of 5 eV or more on the other surface of the plastic film.
  • ⁇ 2> a film made of a first metal having an oxide band gap of 5 eV or more, a film made of a second metal having an oxide band gap of less than 5 eV, and a film of an oxide on one surface of the plastic film; And a film made of a third metal having a band gap of 5 eV or more in this order.
  • the first metal and the third metal are at least one metal selected from the group consisting of aluminum, magnesium, and metal silicon, respectively.
  • the metallized film as described. ⁇ 5> The metallized film according to any one of ⁇ 1> to ⁇ 4>, wherein the total film resistance of the film made of the first to third metals is 6 to 60 ⁇ / ⁇ .
  • ⁇ 6> The metallized film according to any one of ⁇ 1> to ⁇ 5>, wherein the film made of the first to third metals is formed by vapor deposition.
  • ⁇ 7> A film capacitor formed by winding the metallized film according to any one of ⁇ 1> to ⁇ 6>.
  • One surface of a plastic film includes, in this order, a film made of a first metal having an oxide band gap of 5 eV or more and a film made of a second metal having an oxide band gap of less than 5 eV.
  • a first metallized film comprising: a first metallized film; and a second metallized film including a film made of a third metal having an oxide band gap of 5 eV or more on one surface of the plastic film.
  • a film capacitor formed by winding a metallized film includes a film made of a first or third metal having an oxide band gap of 5 eV or more on a surface of a plastic film.
  • a film made of the first or third metal an oxide that is a wide-gap insulator is formed on the surface (interface) on the plastic film side when the film is formed. Therefore, injection of the carrier into the plastic film can be prevented, and the carrier behavior in the plastic film is reduced. Therefore, a film capacitor has a high breakdown voltage.
  • the film capacitor includes a film made of a second metal having an oxide band gap of less than 5 eV, and the film serves as an electric circuit when energized.
  • 1 is a schematic cross-sectional view illustrating a configuration of a metallized film according to Embodiment 1 of the present invention. It is an outline sectional view showing the composition of the metallized film concerning Embodiment 2 of the present invention. It is an outline sectional view showing the composition of the metallized film concerning Embodiment 3 of the present invention. 1 is a schematic cross-sectional view illustrating a configuration of a film capacitor according to one embodiment of the present invention.
  • a metallized film 5 according to Embodiment 1 of the present invention includes, on one surface of a plastic film 1, a film 2 made of a first metal having an oxide band gap of 5 eV or more; A film 3 made of a second metal having an oxide band gap of less than 5 eV in this order, and the other surface of the plastic film 1 is made of a third metal having an oxide band gap of 5 eV or more.
  • a membrane 4 is provided.
  • the plastic film 1 As the plastic film 1 according to one embodiment of the present invention, a general plastic film used for a conventional metallized film can be used. Specifically, the plastic film 1 is preferably a biaxially stretched polypropylene (PP) film, a polyethylene terephthalate (PET) film, or the like. The plastic film 1 may be a laminate.
  • PP polypropylene
  • PET polyethylene terephthalate
  • the thickness of the plastic film 1 is not particularly limited, but is preferably 1 ⁇ m to 20 ⁇ m, and more preferably 2 ⁇ m to 10 ⁇ m.
  • the size of the plastic film 1 may be set according to the use of the film capacitor, the width is preferably 10 mm to 150 mm, more preferably 40 mm to 120 mm, and the length is preferably 10 m to 2000 m, and 100 m to 1000 m. Is more preferred. That is, the plastic film 1 is preferably long so that the metallized film 5 can be wound to form a film capacitor.
  • various metals constituting a metallized film can be classified into a metal forming an oxide having a band gap of 5 eV or more and a metal forming an oxide having a band gap of less than 5 eV.
  • An oxide having a band gap of 5 eV or more is a wide-gap insulator.
  • An oxide having a band gap of less than 5 eV is a narrow-gap electronic conductor.
  • a metal forming an oxide having a band gap of 5 eV or more is used as the first metal and the third metal, and an oxide having a band gap of less than 5 eV is used.
  • the metal to be formed is used as the second metal.
  • the first metal and the third metal are preferably at least one metal selected from the group consisting of aluminum, magnesium, and metallic silicon, more preferably aluminum and magnesium, and even more preferably aluminum.
  • the band gap of aluminum oxide (Al 2 O 3 ) is 8 eV
  • the band gap of magnesium oxide (MgO) is 5.5 eV
  • the band gap of metal silicon oxide (SiO 2 ) is 7 eV. is there.
  • the films 2 and 4 when the films 2 and 4 are formed, an oxide that is a wide gap insulator is formed on the surface (interface) on the plastic film 1 side. It is formed. Therefore, injection of the carrier into the plastic film 1 can be prevented, and the carrier behavior in the plastic film 1 is reduced.
  • the first metal and the third metal may be the same or different from each other, but are preferably the same.
  • the film 2 made of the first metal and the film 4 made of the third metal may be a film made of a single metal, or may be a film made of a plurality of types of metals. It is preferably a film made of a single metal.
  • the film 2 made of the first metal and the film 4 made of the third metal may each be a single layer or a plurality of layers (laminated body), but it is preferably one layer. .
  • the second metal is preferably at least one metal selected from the group consisting of zinc, tin, and indium, more preferably zinc and tin, and even more preferably zinc.
  • the band gap of zinc oxide (ZnO) is 3 eV
  • the band gap of tin oxide (SnO 2 ) is 3 eV
  • the band gap of indium oxide (In 2 O 3 ) is 3 eV.
  • the film 3 made of the second metal gradually forms an oxide from its end (exposed portion) by an anodic oxidation reaction when a ripple current flows, but the oxide is a narrow gap electronic conductor,
  • the film 3 made of the second metal maintains the function as an electrode.
  • the film 3 made of the second metal may be a film made of a single metal or a film made of a plurality of types of metals, but is preferably a film made of a single metal. Further, the film 3 made of the second metal may be a single layer or a plurality of layers (laminated body), but is preferably a single layer.
  • the method for forming the film 2 made of the first metal, the film 3 made of the second metal, and the film 4 made of the third metal is not particularly limited, but is preferably formed by vapor deposition. These films 2 to 4 can be formed by vacuum evaporation using a known evaporation apparatus.
  • the total film resistance of the active portions (portions functioning as electrodes) in the films 2 to 4 made of the first to third metals is not particularly limited, but is preferably 6 to 60 ⁇ / ⁇ ( ⁇ square). , 40 to 50 ⁇ / ⁇ .
  • the total thickness of the first to third metal films 2 to 4 is about 3 nm to 20 nm, preferably about 5 nm to 8 nm (about 50 metal atom layers).
  • electrodes are formed on the end face of the plastic film 1 by, for example, thermal spraying. There is a portion where the films 2 to 4 made of metal are not formed (the width is about 2 mm).
  • the metallized film 5 includes, on one surface of the plastic film 1, the film 2 made of the first metal having an oxide band gap of 5 eV or more, And a film 3 made of a second metal having a band gap of less than 5 eV in this order, and a film 4 made of a third metal having an oxide band gap of 5 eV or more is provided on the other surface of the plastic film 1. It has. Therefore, according to one embodiment of the present invention, both use in a higher electric field (potential gradient), which has a trade-off relationship with each other, and long life even in a use condition where a ripple current is large are compatible. It is possible to provide a metallized film 5 constituting a film capacitor that can be achieved at the same time.
  • the metallized film 6 according to Embodiment 2 of the present invention includes a film 2 made of a first metal having an oxide band gap of 5 eV or more, and a film 2 formed on one surface of a plastic film 11.
  • a first metallized film including a film 3 made of a second metal having a band gap of less than 5 eV in this order, and a third metal having an oxide band gap of 5 eV or more on one surface of the plastic film 12.
  • a second metallized film having a film 4 made of That is, the metallized film according to one embodiment of the present invention may be composed of the two metallized films.
  • the materials of the plastic film 11 and the plastic film 12 may be the same or different from each other, but are preferably the same.
  • the plastic film 11 and the plastic film 12 may be a laminate.
  • the total thickness of the plastic films 11 and 12 may be the same as the thickness of the plastic film 1.
  • the size of the plastic films 11 and 12 may be the same as the size of the plastic film 1.
  • the metallized film 6 is formed by winding a first metallized film and a second metallized film with the surfaces of the plastic films 11 and 12 not having the films 2 to 4 in contact with each other. , Constituting a film capacitor. That is, the film capacitor formed by winding the metallized film 6 according to the second embodiment of the present invention includes a film 2 made of the first metal and a film 3 made of the second metal on one surface of the plastic film 11.
  • the metallized film 6 similarly to the metallized film 5 according to the first embodiment, it is used in a higher electric field (potential gradient) and has a long life even under use conditions in which a ripple current is large. It is possible to provide the metallized film 6 that constitutes a film capacitor capable of satisfying both of them (at the same time).
  • the metallized film 6 includes, on one surface of the plastic film 11, the first metallized film including the film 2 made of the first metal having an oxide band gap of 5 eV or more, and on one surface of the plastic film 12, A second metallized film including, in this order, a film 4 made of a third metal whose oxide has a band gap of 5 eV or more, and a film 3 made of a second metal whose oxide has a band gap of less than 5 eV. , May be configured.
  • a metallized film 7 according to Embodiment 3 of the present invention includes, on one surface of a plastic film 1, a film 2 made of a first metal having an oxide band gap of 5 eV or more, and an oxide A film 3 made of a second metal having a band gap of less than 5 eV, and a film 4 made of a third metal having a band gap of an oxide of 5 eV or more.
  • the metallized film 5 similarly to the metallized film 5 according to the first embodiment, it is used in a higher electric field (potential gradient) and has a long life even under use conditions in which a ripple current is large. It is possible to provide a metallized film 7 that constitutes a film capacitor capable of satisfying both of them (at the same time).
  • the metallized film 7 according to the third embodiment of the present invention forms a laminate of the films 2 to 4 made of the first to third metals on the plastic film 1, the films 2 to 4 For example, a pattern shape having a fuse function can be formed.
  • the film capacitor formed by winding the metallized film 7 allows the films 2 to 4 to be gasified by the fuse function even when dielectric breakdown occurs. And the electrode at the defective portion can be cut off (recovery of insulation). That is, the film capacitor can have self-healing properties (self-healing).
  • the decrease in the capacity can be kept small, the life and the self-security can be improved, and the reliability is improved.
  • the film capacitor 10 according to one embodiment of the present invention is configured by winding two metallized films according to one embodiment of the present invention or two sets thereof, and then winding. I have.
  • the film capacitor 10 according to one aspect of the present invention includes, for example, the metalized film 5 according to Embodiment 1 of the present invention, the metalized film 6 according to Embodiment 2 of the present invention, or the implementation of the present invention. It is configured by winding two or two sets of the metallized film 7 according to Embodiment 3.
  • the films 2 to 4 made of the first to third metals are sandwiched by the plastic film 1, and the film capacitor 10 is made up of the plastic film 1 / film 2 / film 3 / film 4 / plastic film 1
  • the film 2 made of the first metal or the film 4 made of the third metal when the films 2 and 4 are formed, an oxide that is a wide gap insulator is formed on the surface (interface) on the plastic film 1 side. It is formed. Therefore, injection of the carrier into the plastic film 1 can be prevented, and the carrier behavior in the plastic film 1 is reduced. Therefore, the breakdown voltage of the film capacitor 10 increases.
  • the ripple current flows the film 2 made of the first metal or the film 4 made of the third metal is converted into an oxide 2a, 4a which is an insulator having a wide gap by an anodic oxidation reaction. ), Thereby gradually losing the function as an electrode.
  • the film 3 made of the second metal gradually forms an oxide 3a from its end (exposed portion) by an anodic oxidation reaction when a ripple current flows, but the oxide 3a is a narrow gap electronic conductor. Therefore, it becomes an electric circuit when energized, and maintains the function as an electrode. Therefore, the film capacitor 10 is prevented from decreasing in capacity even under the use condition where the ripple current is large.
  • a film capacitor 10 can be provided.
  • Example 1 A metallized film corresponding to the metallized film 5 according to Embodiment 1 of the present invention was produced. Specifically, a biaxially stretched polypropylene film (width 50 mm, length 55 m, thickness 5 ⁇ m) was used as the plastic film 1. As the first to third metals, aluminum, zinc, and aluminum were selected in this order. That is, the metal deposited on the plastic film had a three-layer structure of aluminum / zinc / aluminum. The total film resistance of the active portions (portions functioning as electrodes) in the films 2 to 4 made of the first to third metals was 50 ⁇ / ⁇ . Then, the metallized film was wound to produce a film capacitor. The capacitance of the film capacitor was 20 ⁇ F.
  • the produced film capacitor was evaluated based on a dielectric breakdown voltage in a DC breakdown test and a capacity reduction rate in an AC power application test.
  • the insulation breakdown test was performed in accordance with JIS C # 2151 (Testing method for plastic film for electric use), section 17.2.2, and the voltage rising rate was 100 V / sec.
  • the applied voltage was set to 60 Hz and 350 Vrms and applied for 1000 hours.
  • the produced film capacitor had a dielectric breakdown voltage of 3000 V and a capacity reduction rate of 1%.
  • Example 1 A metallized film corresponding to the first metallized film according to Embodiment 2 of the present invention was produced. Specifically, the same biaxially stretched polypropylene film as in Example 1 was used as the plastic film 11. Aluminum and zinc were selected in this order as the first and second metals. That is, the metal deposited on the plastic film had a two-layer structure of aluminum / zinc. The total film resistance of the active portions in the films 2 and 3 made of the first and second metals was 50 ⁇ / ⁇ . Then, the metallized film was wound to produce a film capacitor. The capacitance of the film capacitor was 20 ⁇ F.
  • the produced film capacitor was evaluated in the same manner as in Example 1.
  • the dielectric breakdown voltage of the produced film capacitor was 2400 V, and the capacity reduction rate was 1%.
  • Example 2 A metallized film corresponding to the second metallized film according to Embodiment 2 of the present invention was produced. Specifically, the same biaxially stretched polypropylene film as in Example 1 was used as the plastic film 12. Aluminum was selected as the third metal. The film resistance of the active portion in the film 4 made of the third metal was 50 ⁇ / ⁇ . Then, the metallized film was wound to produce a film capacitor. The capacitance of the film capacitor was 20 ⁇ F.
  • the produced film capacitor was evaluated in the same manner as in Example 1. As a result, the produced film capacitor had a breakdown voltage of 3000 V and a capacity reduction rate of 5%.
  • Example 1 According to the results of Example 1 and Comparative Examples 1 and 2, according to one embodiment of the present invention, there is a trade-off relationship between use in a higher electric field (potential gradient) and use conditions with a large ripple current. It has been found that a film capacitor can be provided that can achieve (and simultaneously achieve) long life.
  • the film capacitor according to the present invention can be widely used as a DC capacitor in electronic applications, in-vehicle applications, industrial applications, and the like.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Laminated Bodies (AREA)

Abstract

Provided is a film capacitor that is capable of achieving both a use with an electric field having a greater intensity and a long longevity even under usage conditions in which there is a greater ripple current. A film capacitor according to the present invention is formed by winding a metalized film (5): that includes a film (2) formed of a first metal having an oxide band gap of 5 eV or greater and a film (3) formed of a second metal having an oxide band gap of less than 5 eV, in this order, on one of the surfaces of a plastic film (1); and that includes a film (4) formed of a third metal having an oxide band gap of 5 eV or greater on the other surface of the plastic film (1).

Description

金属化フィルムおよびフィルムコンデンサMetallized films and film capacitors
本発明は、プラスチックフィルムの表面に金属からなる膜を備える金属化フィルム、およびフィルムコンデンサに関する。 The present invention relates to a metallized film including a metal film on a surface of a plastic film, and a film capacitor.
一般に、プラスチックフィルムの表面に金属を蒸着させることによって作製された金属化フィルムを巻回してなるフィルムコンデンサ（金属蒸着フィルムコンデンサ、メタライズドフィルムコンデンサ、金属化有機フィルムコンデンサ等とも称される）が知られている。フィルムコンデンサは、セラミックコンデンサおよび電解コンデンサと比較して容量は小さいものの、高電圧に対応可能であり、高周波特性が良好で誘電体損失が少ないという特徴を備えている。それゆえ、フィルムコンデンサは、電子用途、車載用途、産業用途等に広く使用されている。特に近年、フィルムコンデンサは、ハイブリッド車（ＨＥＶ）や電気自動車（ＥＶ）等の車載用途において、寿命および自己保安性に課題を有するアルミニウム電解コンデンサとの置き換え需要によって市場規模を拡大している。アルミニウム電解コンデンサの代わりにフィルムコンデンサを用いることにより、小型化（コンパクト化）、軽量化、およびコストダウンを図ることができる。 Generally, a film capacitor (also referred to as a metallized film capacitor, a metallized film capacitor, a metallized organic film capacitor, etc.) formed by winding a metallized film produced by evaporating a metal on the surface of a plastic film is known. ing. Although the film capacitor has a smaller capacity than the ceramic capacitor and the electrolytic capacitor, it has a feature that it can cope with a high voltage, has a good high-frequency characteristic, and has little dielectric loss. Therefore, film capacitors are widely used in electronic applications, in-vehicle applications, industrial applications, and the like. In particular, in recent years, the market size of film capacitors has been expanding in automotive applications such as hybrid vehicles (HEV) and electric vehicles (EV) due to demand for replacement with aluminum electrolytic capacitors having problems in life and self-security. By using a film capacitor instead of an aluminum electrolytic capacitor, miniaturization (compacting), weight reduction, and cost reduction can be achieved.
上記フィルムコンデンサとしては、従来、プラスチックフィルムの表面に金属としてアルミニウムが蒸着されたフィルムコンデンサ（特許文献１）、プラスチックフィルムの表面に金属として亜鉛が蒸着されたフィルムコンデンサ（特許文献２）、並びに、ポリプロピレンフィルムの表面にアルミニウムと亜鉛との合金が蒸着されたフィルムコンデンサ（特許文献３）が知られている。 Conventionally, as the film capacitor, a film capacitor in which aluminum is deposited as a metal on the surface of a plastic film (Patent Document 1), a film capacitor in which zinc is deposited as a metal on the surface of a plastic film (Patent Document 2), and There is known a film capacitor in which an alloy of aluminum and zinc is deposited on the surface of a polypropylene film (Patent Document 3).
特開２０１３－１１５２３０号公報JP 2013-115230 A 特開平８－１７６７２号公報JP-A-8-17672 特開２００９－８８２５８号公報JP 2009-88258A
近年、小型化、軽量化、およびコストダウンを図りつつ、より高い電界（電位傾度）で使用することができるフィルムコンデンサが求められている。しかしながら、アクティブ部（電極として機能する部位）に金属としてアルミニウムが蒸着されたフィルムコンデンサは、破壊電圧が高く、より高い電界で使用することができるものの、リプル電流が大きい使用条件では容量の減少が速くなり、寿命が短くなってしまうという課題が存在する。また、アクティブ部に金属として亜鉛が蒸着されたフィルムコンデンサは、アルミニウムが蒸着されたフィルムコンデンサと比較して、リプル電流が大きい使用条件においても容量の減少が遅く、長寿命であるものの、破壊電圧が低く、より高い電界で使用することができないという課題が存在する。 In recent years, there has been a demand for a film capacitor that can be used with a higher electric field (potential gradient) while reducing the size, weight, and cost. However, a film capacitor in which aluminum is deposited as a metal on the active portion (the portion that functions as an electrode) has a high breakdown voltage and can be used in a higher electric field. There is a problem that the speed is increased and the life is shortened. In addition, the film capacitor in which zinc is deposited as a metal in the active part has a slower capacity and has a longer life than the film capacitor in which the ripple current is large, even under the use condition where the ripple current is large. However, there is a problem that the device cannot be used at a higher electric field.
即ち、上述の従来技術では、より高い電界で使用することと、リプル電流が大きい使用条件においても長寿命であることとを両立する（同時に達成する）ことができるフィルムコンデンサを提供することができないという問題がある。 That is, the above-described conventional technology cannot provide a film capacitor that can achieve (simultaneously achieve) both use at a higher electric field and long life even under use conditions with a large ripple current. There is a problem.
本発明の一態様は、小型化（コンパクト化）、軽量化、およびコストダウンを図りつつ、より高い電界（電位傾度）で使用することと、リプル電流が大きい使用条件においても長寿命であることとを両立する（同時に達成する）ことができるフィルムコンデンサ、および当該フィルムコンデンサを構成する金属化フィルムを提供することを目的とする。 One embodiment of the present invention is to use a higher electric field (potential gradient) while miniaturizing (compacting), reducing weight, and reducing cost, and to have a long life even under a use condition in which a ripple current is large. It is an object of the present invention to provide a film capacitor capable of satisfying (simultaneously achieving) and a metalized film constituting the film capacitor.
上記課題を解決するために、本発明は、下記＜１＞～＜８＞で示される発明を包含している。
＜１＞  プラスチックフィルムの一方の面に、酸化物のバンドギャップが５ｅＶ以上である第一の金属からなる膜と、酸化物のバンドギャップが５ｅＶ未満である第二の金属からなる膜とをこの順に備え、上記プラスチックフィルムの他方の面に、酸化物のバンドギャップが５ｅＶ以上である第三の金属からなる膜を備える、金属化フィルム。
＜２＞  プラスチックフィルムの片面に、酸化物のバンドギャップが５ｅＶ以上である第一の金属からなる膜と、酸化物のバンドギャップが５ｅＶ未満である第二の金属からなる膜と、酸化物のバンドギャップが５ｅＶ以上である第三の金属からなる膜とをこの順に備える、金属化フィルム。
＜３＞  上記第二の金属が、亜鉛、スズ、およびインジウムからなる群より選択される少なくとも一種の金属である、＜１＞または＜２＞に記載の金属化フィルム。
＜４＞  上記第一の金属および第三の金属がそれぞれ、アルミニウム、マグネシウム、および金属シリコンからなる群より選択される少なくとも一種の金属である、＜１＞～＜３＞の何れか一項に記載の金属化フィルム。
＜５＞  上記第一～第三の金属からなる膜の合計の膜抵抗値が、６～６０Ω／□である、＜１＞～＜４＞の何れか一項に記載の金属化フィルム。
＜６＞  上記第一～第三の金属からなる膜が、蒸着によって形成されている、＜１＞～＜５＞の何れか一項に記載の金属化フィルム。
＜７＞  ＜１＞～＜６＞の何れか一項に記載の金属化フィルムを巻回してなる、フィルムコンデンサ。
＜８＞  プラスチックフィルムの片面に、酸化物のバンドギャップが５ｅＶ以上である第一の金属からなる膜と、酸化物のバンドギャップが５ｅＶ未満である第二の金属からなる膜とをこの順に備える第一の金属化フィルムと、プラスチックフィルムの片面に、酸化物のバンドギャップが５ｅＶ以上である第三の金属からなる膜を備える第二の金属化フィルムと、を含み、上記第一の金属化フィルムと第二の金属化フィルムとを、上記膜を備えていないプラスチックフィルムの面同士を接触させた状態で巻回してなる、フィルムコンデンサ。 In order to solve the above-mentioned problems, the present invention includes the following inventions <1> to <8>.
<1> A film made of a first metal having an oxide band gap of 5 eV or more and a film made of a second metal having an oxide band gap of less than 5 eV are formed on one surface of a plastic film. A metallized film comprising: a third metal film having an oxide band gap of 5 eV or more on the other surface of the plastic film.
<2> a film made of a first metal having an oxide band gap of 5 eV or more, a film made of a second metal having an oxide band gap of less than 5 eV, and a film of an oxide on one surface of the plastic film; And a film made of a third metal having a band gap of 5 eV or more in this order.
<3> The metallized film according to <1> or <2>, wherein the second metal is at least one metal selected from the group consisting of zinc, tin, and indium.
<4> The semiconductor device according to any one of <1> to <3>, wherein the first metal and the third metal are at least one metal selected from the group consisting of aluminum, magnesium, and metal silicon, respectively. The metallized film as described.
<5> The metallized film according to any one of <1> to <4>, wherein the total film resistance of the film made of the first to third metals is 6 to 60 Ω / □.
<6> The metallized film according to any one of <1> to <5>, wherein the film made of the first to third metals is formed by vapor deposition.
<7> A film capacitor formed by winding the metallized film according to any one of <1> to <6>.
<8> One surface of a plastic film includes, in this order, a film made of a first metal having an oxide band gap of 5 eV or more and a film made of a second metal having an oxide band gap of less than 5 eV. A first metallized film comprising: a first metallized film; and a second metallized film including a film made of a third metal having an oxide band gap of 5 eV or more on one surface of the plastic film. A film capacitor formed by winding a film and a second metallized film in a state where the surfaces of a plastic film not having the film are in contact with each other.
本発明の一態様によれば、金属化フィルムを巻回してなるフィルムコンデンサは、プラスチックフィルムの表面に、酸化物のバンドギャップが５ｅＶ以上である第一または第三の金属からなる膜を備える。第一または第三の金属からなる膜には、当該膜の形成時に、プラスチックフィルム側の面（界面）に、ワイドギャップの絶縁体である酸化物が形成される。それゆえ、プラスチックフィルムへのキャリアの注入を防止することができ、当該プラスチックフィルム内でのキャリア挙動が小さくなる。従って、フィルムコンデンサは、破壊電圧が高くなる。一方、上記フィルムコンデンサは、酸化物のバンドギャップが５ｅＶ未満である第二の金属からなる膜を備え、当該膜が通電時に電路となる。そして、リプル電流が流れると陽極酸化反応によって第二の金属から酸化物が形成されるものの、当該酸化物はナローギャップの電子導電体であるため、第二の金属からなる膜は電極としての機能を維持する。従って、フィルムコンデンサは、リプル電流が大きい使用条件においても、容量の減少が抑制される。 According to one embodiment of the present invention, a film capacitor formed by winding a metallized film includes a film made of a first or third metal having an oxide band gap of 5 eV or more on a surface of a plastic film. In the film made of the first or third metal, an oxide that is a wide-gap insulator is formed on the surface (interface) on the plastic film side when the film is formed. Therefore, injection of the carrier into the plastic film can be prevented, and the carrier behavior in the plastic film is reduced. Therefore, a film capacitor has a high breakdown voltage. On the other hand, the film capacitor includes a film made of a second metal having an oxide band gap of less than 5 eV, and the film serves as an electric circuit when energized. When a ripple current flows, an oxide is formed from the second metal by an anodic oxidation reaction. However, since the oxide is a narrow-gap electronic conductor, the film made of the second metal functions as an electrode. To maintain. Therefore, in the film capacitor, a decrease in the capacitance is suppressed even under the use condition in which the ripple current is large.
それゆえ、本発明の一態様によれば、小型化（コンパクト化）、軽量化、およびコストダウンを図りつつ、互いにトレードオフの関係にある、より高い電界（電位傾度）で使用することと、リプル電流が大きい使用条件においても長寿命であることとを両立する（同時に達成する）ことができるフィルムコンデンサ、および当該フィルムコンデンサを構成する金属化フィルムを提供することができるという効果を奏する。 Therefore, according to one embodiment of the present invention, while using a higher electric field (potential gradient) in a trade-off relationship with each other while reducing size (compactness), weight, and cost, It is possible to provide a film capacitor capable of achieving (and simultaneously achieving) a long life even under a use condition in which a ripple current is large, and a metalized film constituting the film capacitor.
本発明の実施形態１に係る金属化フィルムの構成を示す概略の断面図である。1 is a schematic cross-sectional view illustrating a configuration of a metallized film according to Embodiment 1 of the present invention. 本発明の実施形態２に係る金属化フィルムの構成を示す概略の断面図である。It is an outline sectional view showing the composition of the metallized film concerning Embodiment 2 of the present invention. 本発明の実施形態３に係る金属化フィルムの構成を示す概略の断面図である。It is an outline sectional view showing the composition of the metallized film concerning Embodiment 3 of the present invention. 本発明の一態様に係るフィルムコンデンサの構成を示す概略の断面図である。1 is a schematic cross-sectional view illustrating a configuration of a film capacitor according to one embodiment of the present invention.
本発明の一実施形態について以下に説明するが、本発明はこれに限定されるものではない。本発明は、以下に説明する各実施形態や各構成に限定されるものではなく、特許請求の範囲に示した範囲で種々の変更が可能であり、異なる実施形態や実施例にそれぞれ開示された技術的手段を適宜組み合わせて得られる実施形態や実施例についても本発明の技術的範囲に含まれる。また、本明細書中に記載された学術文献および特許文献の全てが、本明細書中において参考文献として援用される。なお、本明細書において特記しない限り、数値範囲を表す「Ａ～Ｂ」は、「Ａ以上、Ｂ以下」を意味する。 An embodiment of the present invention will be described below, but the present invention is not limited to this. The present invention is not limited to each embodiment and each configuration described below, and various modifications are possible within the scope shown in the claims, and the invention is disclosed in different embodiments and examples, respectively. Embodiments and examples obtained by appropriately combining technical means are also included in the technical scope of the present invention. In addition, all of the academic documents and patent documents described in this specification are incorporated herein by reference. Unless otherwise specified in this specification, “A to B” representing a numerical range means “A or more and B or less”.
〔実施形態１〕
本発明の一実施形態について、以下に説明する。 [Embodiment 1]
An embodiment of the present invention will be described below.
図１に示すように、本発明の実施形態１に係る金属化フィルム５は、プラスチックフィルム１の一方の面に、酸化物のバンドギャップが５ｅＶ以上である第一の金属からなる膜２と、酸化物のバンドギャップが５ｅＶ未満である第二の金属からなる膜３とをこの順に備え、上記プラスチックフィルム１の他方の面に、酸化物のバンドギャップが５ｅＶ以上である第三の金属からなる膜４を備えている。 As shown in FIG. 1, a metallized film 5 according to Embodiment 1 of the present invention includes, on one surface of a plastic film 1, a film 2 made of a first metal having an oxide band gap of 5 eV or more; A film 3 made of a second metal having an oxide band gap of less than 5 eV in this order, and the other surface of the plastic film 1 is made of a third metal having an oxide band gap of 5 eV or more. A membrane 4 is provided.
［プラスチックフィルム］
本発明の一態様に係るプラスチックフィルム１には、従来の金属化フィルムに用いられている一般的なプラスチックフィルムを用いることができる。具体的には、プラスチックフィルム１としては、二軸延伸されたポリプロピレン（ＰＰ）フィルムおよびポリエチレンテレフタレート（ＰＥＴ）フィルム等が好適である。プラスチックフィルム１は、積層体であってもよい。 [Plastic film]
As the plastic film 1 according to one embodiment of the present invention, a general plastic film used for a conventional metallized film can be used. Specifically, the plastic film 1 is preferably a biaxially stretched polypropylene (PP) film, a polyethylene terephthalate (PET) film, or the like. The plastic film 1 may be a laminate.
プラスチックフィルム１の厚さは、特に限定されないものの、１μｍ～２０μｍが好ましく、２μｍ～１０μｍがより好ましい。また、プラスチックフィルム１の大きさは、フィルムコンデンサの用途に応じて設定すればよいものの、幅は１０ｍｍ～１５０ｍｍが好ましく、４０ｍｍ～１２０ｍｍがより好ましく、長さは１０ｍ～２０００ｍが好ましく、１００ｍ～１０００ｍがより好ましい。即ち、プラスチックフィルム１は、金属化フィルム５を巻回してフィルムコンデンサを形成することができるように、長尺物であることが好ましい。 The thickness of the plastic film 1 is not particularly limited, but is preferably 1 μm to 20 μm, and more preferably 2 μm to 10 μm. Although the size of the plastic film 1 may be set according to the use of the film capacitor, the width is preferably 10 mm to 150 mm, more preferably 40 mm to 120 mm, and the length is preferably 10 m to 2000 m, and 100 m to 1000 m. Is more preferred. That is, the plastic film 1 is preferably long so that the metallized film 5 can be wound to form a film capacitor.
［第一の金属～第三の金属］
一般に、金属化フィルムを構成する種々の金属は、バンドギャップが５ｅＶ以上である酸化物を形成する金属と、バンドギャップが５ｅＶ未満である酸化物を形成する金属とに分類することができる。バンドギャップが５ｅＶ以上である酸化物は、ワイドギャップの絶縁体である。バンドギャップが５ｅＶ未満である酸化物は、ナローギャップの電子導電体である。本発明の一態様に係る金属化フィルム５においては、バンドギャップが５ｅＶ以上である酸化物を形成する金属を第一の金属および第三の金属として用い、バンドギャップが５ｅＶ未満である酸化物を形成する金属を第二の金属として用いる。 [1st metal-3rd metal]
In general, various metals constituting a metallized film can be classified into a metal forming an oxide having a band gap of 5 eV or more and a metal forming an oxide having a band gap of less than 5 eV. An oxide having a band gap of 5 eV or more is a wide-gap insulator. An oxide having a band gap of less than 5 eV is a narrow-gap electronic conductor. In the metallized film 5 according to one embodiment of the present invention, a metal forming an oxide having a band gap of 5 eV or more is used as the first metal and the third metal, and an oxide having a band gap of less than 5 eV is used. The metal to be formed is used as the second metal.
（第一の金属からなる膜、第三の金属からなる膜）
第一の金属および第三の金属としては、アルミニウム、マグネシウム、および金属シリコンからなる群より選択される少なくとも一種の金属が好ましく、アルミニウムおよびマグネシウムがより好ましく、アルミニウムがさらに好ましい。アルミニウムの酸化物（Ａｌ２Ｏ３）のバンドギャップは８ｅＶであり、マグネシウムの酸化物（ＭｇＯ）のバンドギャップは５．５ｅＶであり、金属シリコンの酸化物（ＳｉＯ２）のバンドギャップは７ｅＶである。 (Film made of the first metal, film made of the third metal)
The first metal and the third metal are preferably at least one metal selected from the group consisting of aluminum, magnesium, and metallic silicon, more preferably aluminum and magnesium, and even more preferably aluminum. The band gap of aluminum oxide (Al 2 O 3 ) is 8 eV, the band gap of magnesium oxide (MgO) is 5.5 eV, and the band gap of metal silicon oxide (SiO 2 ) is 7 eV. is there.
第一の金属からなる膜２または第三の金属からなる膜４には、当該膜２，４の形成時に、プラスチックフィルム１側の面（界面）に、ワイドギャップの絶縁体である酸化物が形成される。それゆえ、プラスチックフィルム１へのキャリアの注入を防止することができ、当該プラスチックフィルム１内でのキャリア挙動が小さくなる。 In the film 2 made of the first metal or the film 4 made of the third metal, when the films 2 and 4 are formed, an oxide that is a wide gap insulator is formed on the surface (interface) on the plastic film 1 side. It is formed. Therefore, injection of the carrier into the plastic film 1 can be prevented, and the carrier behavior in the plastic film 1 is reduced.
第一の金属および第三の金属は、互いに同じであってもよく、互いに異なっていてもよいが、互いに同じであることが好ましい。また、第一の金属からなる膜２、および、第三の金属からなる膜４は、単一の金属からなる膜であってもよく、複数種類の金属からなる膜であってもよいが、単一の金属からなる膜であることが好ましい。さらに、第一の金属からなる膜２、および、第三の金属からなる膜４は、それぞれ一層であってもよく、複数層（積層体）であってもよいが、一層であることが好ましい。 The first metal and the third metal may be the same or different from each other, but are preferably the same. Also, the film 2 made of the first metal and the film 4 made of the third metal may be a film made of a single metal, or may be a film made of a plurality of types of metals. It is preferably a film made of a single metal. Further, the film 2 made of the first metal and the film 4 made of the third metal may each be a single layer or a plurality of layers (laminated body), but it is preferably one layer. .
（第二の金属からなる膜）
第二の金属としては、亜鉛、スズ、およびインジウムからなる群より選択される少なくとも一種の金属が好ましく、亜鉛およびスズがより好ましく、亜鉛がさらに好ましい。亜鉛の酸化物（ＺｎＯ）のバンドギャップは３ｅＶであり、スズの酸化物（ＳｎＯ２）のバンドギャップは３ｅＶであり、インジウムの酸化物（Ｉｎ２Ｏ３）のバンドギャップは３ｅＶである。 (Film made of second metal)
The second metal is preferably at least one metal selected from the group consisting of zinc, tin, and indium, more preferably zinc and tin, and even more preferably zinc. The band gap of zinc oxide (ZnO) is 3 eV, the band gap of tin oxide (SnO 2 ) is 3 eV, and the band gap of indium oxide (In 2 O 3 ) is 3 eV.
第二の金属からなる膜３は、リプル電流が流れると陽極酸化反応によってその端部（露出部分）から酸化物を徐々に形成するものの、当該酸化物はナローギャップの電子導電体であるため、第二の金属からなる膜３は電極としての機能を維持する。 The film 3 made of the second metal gradually forms an oxide from its end (exposed portion) by an anodic oxidation reaction when a ripple current flows, but the oxide is a narrow gap electronic conductor, The film 3 made of the second metal maintains the function as an electrode.
第二の金属からなる膜３は、単一の金属からなる膜であってもよく、複数種類の金属からなる膜であってもよいが、単一の金属からなる膜であることが好ましい。さらに、第二の金属からなる膜３は、一層であってもよく、複数層（積層体）であってもよいが、一層であることが好ましい。 The film 3 made of the second metal may be a film made of a single metal or a film made of a plurality of types of metals, but is preferably a film made of a single metal. Further, the film 3 made of the second metal may be a single layer or a plurality of layers (laminated body), but is preferably a single layer.
（第一～第三の金属からなる膜）
第一の金属からなる膜２、第二の金属からなる膜３、および第三の金属からなる膜４の形成方法は、特に限定されないものの、蒸着によって形成されていることが好ましい。これら膜２～４は、公知の蒸着装置を用いた真空蒸着によって形成することができる。 (Film consisting of first to third metals)
The method for forming the film 2 made of the first metal, the film 3 made of the second metal, and the film 4 made of the third metal is not particularly limited, but is preferably formed by vapor deposition. These films 2 to 4 can be formed by vacuum evaporation using a known evaporation apparatus.
上記第一～第三の金属からなる膜２～４におけるアクティブ部（電極として機能する部位）の合計の膜抵抗値は、特に限定されないものの、６～６０Ω／□（Ωsquare）であることが好ましく、４０～５０Ω／□であることがより好ましい。尚、上記第一～第三の金属からなる膜２～４の合計の厚さは、およそ３ｎｍ～２０ｎｍであり、およそ５ｎｍ～８ｎｍ（金属原子の層でおよそ５０層）が好適である。 The total film resistance of the active portions (portions functioning as electrodes) in the films 2 to 4 made of the first to third metals is not particularly limited, but is preferably 6 to 60Ω / □ (Ωsquare). , 40 to 50Ω / □. The total thickness of the first to third metal films 2 to 4 is about 3 nm to 20 nm, preferably about 5 nm to 8 nm (about 50 metal atom layers).
尚、フィルムコンデンサの製造時に、例えば溶射することによってプラスチックフィルム１の端面に電極を形成するので、プラスチックフィルム１の表面の少なくとも二辺には、短絡を避けるために、上記第一～第三の金属からなる膜２～４が形成されない部分（幅はおよそ２ｍｍ）が存在する。 During the production of the film capacitor, electrodes are formed on the end face of the plastic film 1 by, for example, thermal spraying. There is a portion where the films 2 to 4 made of metal are not formed (the width is about 2 mm).
以上のように、本発明の実施形態１に係る金属化フィルム５は、プラスチックフィルム１の一方の面に、酸化物のバンドギャップが５ｅＶ以上である第一の金属からなる膜２と、酸化物のバンドギャップが５ｅＶ未満である第二の金属からなる膜３とをこの順に備え、上記プラスチックフィルム１の他方の面に、酸化物のバンドギャップが５ｅＶ以上である第三の金属からなる膜４を備えている。それゆえ、本発明の一態様によれば、互いにトレードオフの関係にある、より高い電界（電位傾度）で使用することと、リプル電流が大きい使用条件においても長寿命であることとを両立する（同時に達成する）ことができるフィルムコンデンサを構成する金属化フィルム５を提供することができる。 As described above, the metallized film 5 according to the first embodiment of the present invention includes, on one surface of the plastic film 1, the film 2 made of the first metal having an oxide band gap of 5 eV or more, And a film 3 made of a second metal having a band gap of less than 5 eV in this order, and a film 4 made of a third metal having an oxide band gap of 5 eV or more is provided on the other surface of the plastic film 1. It has. Therefore, according to one embodiment of the present invention, both use in a higher electric field (potential gradient), which has a trade-off relationship with each other, and long life even in a use condition where a ripple current is large are compatible. It is possible to provide a metallized film 5 constituting a film capacitor that can be achieved at the same time.
〔実施形態２〕
本発明の他の実施形態について、以下に説明する。尚、説明の便宜上、実施形態１にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を省略する。 [Embodiment 2]
Another embodiment of the present invention will be described below. For convenience of explanation, members having the same functions as those described in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
図２に示すように、本発明の実施形態２に係る金属化フィルム６は、プラスチックフィルム１１の片面に、酸化物のバンドギャップが５ｅＶ以上である第一の金属からなる膜２と、酸化物のバンドギャップが５ｅＶ未満である第二の金属からなる膜３とをこの順に備える第一の金属化フィルムと、プラスチックフィルム１２の片面に、酸化物のバンドギャップが５ｅＶ以上である第三の金属からなる膜４を備える第二の金属化フィルムと、で構成されている。即ち、本発明の一態様に係る金属化フィルムは、上記二枚の金属化フィルムで構成されていてもよい。 As shown in FIG. 2, the metallized film 6 according to Embodiment 2 of the present invention includes a film 2 made of a first metal having an oxide band gap of 5 eV or more, and a film 2 formed on one surface of a plastic film 11. A first metallized film including a film 3 made of a second metal having a band gap of less than 5 eV in this order, and a third metal having an oxide band gap of 5 eV or more on one surface of the plastic film 12. And a second metallized film having a film 4 made of That is, the metallized film according to one embodiment of the present invention may be composed of the two metallized films.
プラスチックフィルム１１およびプラスチックフィルム１２の材質は、互いに同じであってもよく、互いに異なっていてもよいが、互いに同じであることが好ましい。プラスチックフィルム１１およびプラスチックフィルム１２は、積層体であってもよい。プラスチックフィルム１１，１２の合計の厚さは、プラスチックフィルム１の厚さと同程度であればよい。プラスチックフィルム１１，１２の大きさは、プラスチックフィルム１の大きさと同程度であればよい。 The materials of the plastic film 11 and the plastic film 12 may be the same or different from each other, but are preferably the same. The plastic film 11 and the plastic film 12 may be a laminate. The total thickness of the plastic films 11 and 12 may be the same as the thickness of the plastic film 1. The size of the plastic films 11 and 12 may be the same as the size of the plastic film 1.
金属化フィルム６は、第一の金属化フィルムと第二の金属化フィルムとを、上記膜２～４を備えていないプラスチックフィルム１１，１２の面同士を接触させた状態で巻回することによって、フィルムコンデンサを構成する。即ち、本発明の実施形態２に係る金属化フィルム６を巻回してなるフィルムコンデンサは、プラスチックフィルム１１の片面に、第一の金属からなる膜２と、第二の金属からなる膜３とをこの順に備える第一の金属化フィルムと、プラスチックフィルム１２の片面に、第三の金属からなる膜４を備える第二の金属化フィルムと、を含み、上記第一の金属化フィルムと第二の金属化フィルムとを、上記膜２～４を備えていないプラスチックフィルム１１，１２の面同士を接触させた状態で巻回することによって構成される。 The metallized film 6 is formed by winding a first metallized film and a second metallized film with the surfaces of the plastic films 11 and 12 not having the films 2 to 4 in contact with each other. , Constituting a film capacitor. That is, the film capacitor formed by winding the metallized film 6 according to the second embodiment of the present invention includes a film 2 made of the first metal and a film 3 made of the second metal on one surface of the plastic film 11. A first metallized film provided in this order, and a second metallized film having a film 4 made of a third metal on one surface of a plastic film 12, wherein the first metallized film and the second It is configured by winding a metallized film with the surfaces of the plastic films 11 and 12 not having the films 2 to 4 in contact with each other.
それゆえ、本発明の一態様によれば、実施形態１に係る金属化フィルム５と同様に、より高い電界（電位傾度）で使用することと、リプル電流が大きい使用条件においても長寿命であることとを両立する（同時に達成する）ことができるフィルムコンデンサを構成する金属化フィルム６を提供することができる。 Therefore, according to one aspect of the present invention, similarly to the metallized film 5 according to the first embodiment, it is used in a higher electric field (potential gradient) and has a long life even under use conditions in which a ripple current is large. It is possible to provide the metallized film 6 that constitutes a film capacitor capable of satisfying both of them (at the same time).
尚、上述した説明においては、膜２と膜３とがこの順にプラスチックフィルム１１の片面に備えられている構成を例に挙げたが、膜３は、プラスチックフィルム１２側に備えられていてもよい。即ち、金属化フィルム６は、プラスチックフィルム１１の片面に、酸化物のバンドギャップが５ｅＶ以上である第一の金属からなる膜２を備える第一の金属化フィルムと、プラスチックフィルム１２の片面に、酸化物のバンドギャップが５ｅＶ以上である第三の金属からなる膜４と、酸化物のバンドギャップが５ｅＶ未満である第二の金属からなる膜３とをこの順に備える第二の金属化フィルムと、で構成されていてもよい。 In the above description, the configuration in which the film 2 and the film 3 are provided on one side of the plastic film 11 in this order is taken as an example, but the film 3 may be provided on the plastic film 12 side. . That is, the metallized film 6 includes, on one surface of the plastic film 11, the first metallized film including the film 2 made of the first metal having an oxide band gap of 5 eV or more, and on one surface of the plastic film 12, A second metallized film including, in this order, a film 4 made of a third metal whose oxide has a band gap of 5 eV or more, and a film 3 made of a second metal whose oxide has a band gap of less than 5 eV. , May be configured.
〔実施形態３〕
本発明のさらに他の実施形態について、以下に説明する。尚、説明の便宜上、実施形態１にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を省略する。 [Embodiment 3]
Another embodiment of the present invention will be described below. For convenience of explanation, members having the same functions as those described in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
図３に示すように、本発明の実施形態３に係る金属化フィルム７は、プラスチックフィルム１の片面に、酸化物のバンドギャップが５ｅＶ以上である第一の金属からなる膜２と、酸化物のバンドギャップが５ｅＶ未満である第二の金属からなる膜３と、酸化物のバンドギャップが５ｅＶ以上である第三の金属からなる膜４とをこの順に備えている。 As shown in FIG. 3, a metallized film 7 according to Embodiment 3 of the present invention includes, on one surface of a plastic film 1, a film 2 made of a first metal having an oxide band gap of 5 eV or more, and an oxide A film 3 made of a second metal having a band gap of less than 5 eV, and a film 4 made of a third metal having a band gap of an oxide of 5 eV or more.
それゆえ、本発明の一態様によれば、実施形態１に係る金属化フィルム５と同様に、より高い電界（電位傾度）で使用することと、リプル電流が大きい使用条件においても長寿命であることとを両立する（同時に達成する）ことができるフィルムコンデンサを構成する金属化フィルム７を提供することができる。 Therefore, according to one aspect of the present invention, similarly to the metallized film 5 according to the first embodiment, it is used in a higher electric field (potential gradient) and has a long life even under use conditions in which a ripple current is large. It is possible to provide a metallized film 7 that constitutes a film capacitor capable of satisfying both of them (at the same time).
また、本発明の実施形態３に係る金属化フィルム７は、プラスチックフィルム１上に、上記第一～第三の金属からなる膜２～４の積層体を構成するので、当該膜２～４に、例えばヒューズ機能を備えるパターン形状を形成することができる。上記膜２～４にヒューズ機能を備えるパターン形状を形成することにより、金属化フィルム７を巻回してなるフィルムコンデンサは、絶縁破壊が生じた場合においても、当該ヒューズ機能によって膜２～４をガス化させ、欠陥のある部位の電極を切り離す（絶縁性を回復する）ことができる。つまり、当該フィルムコンデンサは、自己回復性（セルフヒーリング）を備えることができる。これにより、金属化フィルム７を巻回してなるフィルムコンデンサは、容量の減少を少なく留めることができると共に、寿命および自己保安性を向上させることができ、信頼性が高まる。 Further, since the metallized film 7 according to the third embodiment of the present invention forms a laminate of the films 2 to 4 made of the first to third metals on the plastic film 1, the films 2 to 4 For example, a pattern shape having a fuse function can be formed. By forming a pattern having a fuse function on the films 2 to 4, the film capacitor formed by winding the metallized film 7 allows the films 2 to 4 to be gasified by the fuse function even when dielectric breakdown occurs. And the electrode at the defective portion can be cut off (recovery of insulation). That is, the film capacitor can have self-healing properties (self-healing). Thereby, in the film capacitor formed by winding the metallized film 7, the decrease in the capacity can be kept small, the life and the self-security can be improved, and the reliability is improved.
〔実施形態４〕
本発明のさらに他の実施形態について、以下に説明する。尚、説明の便宜上、実施形態１にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を省略する。 [Embodiment 4]
Another embodiment of the present invention will be described below. For convenience of explanation, members having the same functions as those described in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
図４に示すように、本発明の一態様に係るフィルムコンデンサ１０は、本発明の一態様に係る金属化フィルムを二枚、或いは二組重ね合わせた後、巻回することによって、構成されている。具体的には、本発明の一態様に係るフィルムコンデンサ１０は、例えば、本発明の実施形態１に係る金属化フィルム５、本発明の実施形態２に係る金属化フィルム６、または本発明の実施形態３に係る金属化フィルム７を二枚、或いは二組巻回することによって、構成されている。 As shown in FIG. 4, the film capacitor 10 according to one embodiment of the present invention is configured by winding two metallized films according to one embodiment of the present invention or two sets thereof, and then winding. I have. Specifically, the film capacitor 10 according to one aspect of the present invention includes, for example, the metalized film 5 according to Embodiment 1 of the present invention, the metalized film 6 according to Embodiment 2 of the present invention, or the implementation of the present invention. It is configured by winding two or two sets of the metallized film 7 according to Embodiment 3.
金属化フィルムを巻回することにより、第一～第三の金属からなる膜２～４はプラスチックフィルム１によって挟持された状態となり、フィルムコンデンサ１０は、プラスチックフィルム１／膜２／膜３／膜４／プラスチックフィルム１で示される構造を有することになる。 By winding the metallized film, the films 2 to 4 made of the first to third metals are sandwiched by the plastic film 1, and the film capacitor 10 is made up of the plastic film 1 / film 2 / film 3 / film 4 / plastic film 1
第一の金属からなる膜２または第三の金属からなる膜４には、当該膜２，４の形成時に、プラスチックフィルム１側の面（界面）に、ワイドギャップの絶縁体である酸化物が形成される。それゆえ、プラスチックフィルム１へのキャリアの注入を防止することができ、当該プラスチックフィルム１内でのキャリア挙動が小さくなる。従って、フィルムコンデンサ１０は、破壊電圧が高くなる。尚、第一の金属からなる膜２または第三の金属からなる膜４は、リプル電流が流れると陽極酸化反応によってワイドギャップの絶縁体である酸化物２ａ，４ａを、その端部（露出部分）から徐々に形成し、これにより、電極としての機能を徐々に失う。 In the film 2 made of the first metal or the film 4 made of the third metal, when the films 2 and 4 are formed, an oxide that is a wide gap insulator is formed on the surface (interface) on the plastic film 1 side. It is formed. Therefore, injection of the carrier into the plastic film 1 can be prevented, and the carrier behavior in the plastic film 1 is reduced. Therefore, the breakdown voltage of the film capacitor 10 increases. When the ripple current flows, the film 2 made of the first metal or the film 4 made of the third metal is converted into an oxide 2a, 4a which is an insulator having a wide gap by an anodic oxidation reaction. ), Thereby gradually losing the function as an electrode.
一方、第二の金属からなる膜３は、リプル電流が流れると陽極酸化反応によってその端部（露出部分）から酸化物３ａを徐々に形成するものの、当該酸化物３ａはナローギャップの電子導電体であるため、通電時に電路となり、電極としての機能を維持する。従って、フィルムコンデンサ１０は、リプル電流が大きい使用条件においても、容量の減少が抑制される。 On the other hand, the film 3 made of the second metal gradually forms an oxide 3a from its end (exposed portion) by an anodic oxidation reaction when a ripple current flows, but the oxide 3a is a narrow gap electronic conductor. Therefore, it becomes an electric circuit when energized, and maintains the function as an electrode. Therefore, the film capacitor 10 is prevented from decreasing in capacity even under the use condition where the ripple current is large.
それゆえ、本発明の一態様によれば、より高い電界（電位傾度）で使用することと、リプル電流が大きい使用条件においても長寿命であることとを両立する（同時に達成する）ことができるフィルムコンデンサ１０を提供することができる。 Therefore, according to one embodiment of the present invention, it is possible to simultaneously use (achieve at the same time) use in a higher electric field (potential gradient) and long life even under use conditions where a ripple current is large. A film capacitor 10 can be provided.
次に、本発明に係る金属化フィルムおよびフィルムコンデンサについて、実施例および比較例を挙げてさらに詳細に説明するが、本発明は係る実施例のみに制限されるものではない。 Next, the metallized film and the film capacitor according to the present invention will be described in more detail with reference to Examples and Comparative Examples, but the present invention is not limited to only the Examples.
〔実施例１〕
本発明の実施形態１に係る金属化フィルム５に相当する金属化フィルムを作製した。具体的には、プラスチックフィルム１として、二軸延伸されたポリプロピレンフィルム（幅５０ｍｍ、長さ５５ｍ、厚さ５μｍ）を用いた。第一～第三の金属として、この順に、アルミニウム、亜鉛、アルミニウムを選択した。即ち、プラスチックフィルムに蒸着する金属をアルミニウム／亜鉛／アルミニウムの三層構造とした。第一～第三の金属からなる膜２～４におけるアクティブ部（電極として機能する部位）の合計の膜抵抗値は、５０Ω／□であった。そして、上記金属化フィルムを巻回してフィルムコンデンサを作製した。当該フィルムコンデンサの静電容量は、２０μＦであった。 [Example 1]
A metallized film corresponding to the metallized film 5 according to Embodiment 1 of the present invention was produced. Specifically, a biaxially stretched polypropylene film (width 50 mm, length 55 m, thickness 5 μm) was used as the plastic film 1. As the first to third metals, aluminum, zinc, and aluminum were selected in this order. That is, the metal deposited on the plastic film had a three-layer structure of aluminum / zinc / aluminum. The total film resistance of the active portions (portions functioning as electrodes) in the films 2 to 4 made of the first to third metals was 50Ω / □. Then, the metallized film was wound to produce a film capacitor. The capacitance of the film capacitor was 20 μF.
そして、作製したフィルムコンデンサを、直流での絶縁破壊試験の絶縁破壊電圧、並びに、交流での課電試験の容量減少率によって評価した。上記絶縁破壊試験は、ＪＩＳ Ｃ ２１５１（電気用プラスチックフィルム試験方法）１７．２．２項に従って行い、電圧上昇速度を１００Ｖ／秒とした。課電試験では、印加電圧を６０Ｈｚ，３５０Ｖrms とし、１０００時間印加した。 Then, the produced film capacitor was evaluated based on a dielectric breakdown voltage in a DC breakdown test and a capacity reduction rate in an AC power application test. The insulation breakdown test was performed in accordance with JIS C # 2151 (Testing method for plastic film for electric use), section 17.2.2, and the voltage rising rate was 100 V / sec. In the power application test, the applied voltage was set to 60 Hz and 350 Vrms and applied for 1000 hours.
その結果、作製したフィルムコンデンサの絶縁破壊電圧は３０００Ｖであり、容量減少率は１％であった。 As a result, the produced film capacitor had a dielectric breakdown voltage of 3000 V and a capacity reduction rate of 1%.
〔比較例１〕
本発明の実施形態２に係る第一の金属化フィルムに相当する金属化フィルムを作製した。具体的には、プラスチックフィルム１１として、実施例１と同様の二軸延伸されたポリプロピレンフィルムを用いた。第一および第二の金属として、この順に、アルミニウム、亜鉛を選択した。即ち、プラスチックフィルムに蒸着する金属をアルミニウム／亜鉛の二層構造とした。第一および第二の金属からなる膜２，３におけるアクティブ部の合計の膜抵抗値は、５０Ω／□であった。そして、上記金属化フィルムを巻回してフィルムコンデンサを作製した。当該フィルムコンデンサの静電容量は、２０μＦであった。 [Comparative Example 1]
A metallized film corresponding to the first metallized film according to Embodiment 2 of the present invention was produced. Specifically, the same biaxially stretched polypropylene film as in Example 1 was used as the plastic film 11. Aluminum and zinc were selected in this order as the first and second metals. That is, the metal deposited on the plastic film had a two-layer structure of aluminum / zinc. The total film resistance of the active portions in the films 2 and 3 made of the first and second metals was 50Ω / □. Then, the metallized film was wound to produce a film capacitor. The capacitance of the film capacitor was 20 μF.
そして、作製したフィルムコンデンサを、実施例１と同様にして評価した。その結果、作製したフィルムコンデンサの絶縁破壊電圧は２４００Ｖであり、容量減少率は１％であった。 Then, the produced film capacitor was evaluated in the same manner as in Example 1. As a result, the dielectric breakdown voltage of the produced film capacitor was 2400 V, and the capacity reduction rate was 1%.
〔比較例２〕
本発明の実施形態２に係る第二の金属化フィルムに相当する金属化フィルムを作製した。具体的には、プラスチックフィルム１２として、実施例１と同様の二軸延伸されたポリプロピレンフィルムを用いた。第三の金属として、アルミニウムを選択した。第三の金属からなる膜４におけるアクティブ部の膜抵抗値は、５０Ω／□であった。そして、上記金属化フィルムを巻回してフィルムコンデンサを作製した。当該フィルムコンデンサの静電容量は、２０μＦであった。 [Comparative Example 2]
A metallized film corresponding to the second metallized film according to Embodiment 2 of the present invention was produced. Specifically, the same biaxially stretched polypropylene film as in Example 1 was used as the plastic film 12. Aluminum was selected as the third metal. The film resistance of the active portion in the film 4 made of the third metal was 50 Ω / □. Then, the metallized film was wound to produce a film capacitor. The capacitance of the film capacitor was 20 μF.
そして、作製したフィルムコンデンサを、実施例１と同様にして評価した。その結果、作製したフィルムコンデンサの絶縁破壊電圧は３０００Ｖであり、容量減少率は５％であった。 Then, the produced film capacitor was evaluated in the same manner as in Example 1. As a result, the produced film capacitor had a breakdown voltage of 3000 V and a capacity reduction rate of 5%.
（まとめ）
上記実施例１および比較例１，２の結果から、本発明の一態様によれば、互いにトレードオフの関係にある、より高い電界（電位傾度）で使用することと、リプル電流が大きい使用条件においても長寿命であることとを両立する（同時に達成する）ことができるフィルムコンデンサを提供することができることが分かった。 (Summary)
According to the results of Example 1 and Comparative Examples 1 and 2, according to one embodiment of the present invention, there is a trade-off relationship between use in a higher electric field (potential gradient) and use conditions with a large ripple current. It has been found that a film capacitor can be provided that can achieve (and simultaneously achieve) long life.
本発明に係るフィルムコンデンサは、直流コンデンサとして、電子用途、車載用途、産業用途等に広く利用することができる。 The film capacitor according to the present invention can be widely used as a DC capacitor in electronic applications, in-vehicle applications, industrial applications, and the like.
１  プラスチックフィルム
２  第一の金属からなる膜
３  第二の金属からなる膜
４  第三の金属からなる膜
２ａ～４ａ  酸化物
５～７  金属化フィルム
１０  フィルムコンデンサ REFERENCE SIGNS LIST 1 plastic film 2 first metal film 3 second metal film 4 third metal film 2 a to 4 a oxide 5 to 7 metallized film 10 film capacitor

Claims (8)

  1. プラスチックフィルムの一方の面に、酸化物のバンドギャップが５ｅＶ以上である第一の金属からなる膜と、酸化物のバンドギャップが５ｅＶ未満である第二の金属からなる膜とをこの順に備え、上記プラスチックフィルムの他方の面に、酸化物のバンドギャップが５ｅＶ以上である第三の金属からなる膜を備える、金属化フィルム。 On one surface of the plastic film, a film made of a first metal having an oxide band gap of 5 eV or more and a film made of a second metal having an oxide band gap of less than 5 eV are provided in this order, A metallized film comprising a film made of a third metal having an oxide band gap of 5 eV or more on the other surface of the plastic film.
  2. プラスチックフィルムの片面に、酸化物のバンドギャップが５ｅＶ以上である第一の金属からなる膜と、酸化物のバンドギャップが５ｅＶ未満である第二の金属からなる膜と、酸化物のバンドギャップが５ｅＶ以上である第三の金属からなる膜とをこの順に備える、金属化フィルム。 On one surface of the plastic film, a film made of a first metal having an oxide band gap of 5 eV or more, a film made of a second metal having an oxide band gap of less than 5 eV, and a band gap of the oxide A film made of a third metal having 5 eV or more in this order.
  3. 上記第二の金属が、亜鉛、スズ、およびインジウムからなる群より選択される少なくとも一種の金属である、請求項１または２に記載の金属化フィルム。 The metallized film according to claim 1, wherein the second metal is at least one metal selected from the group consisting of zinc, tin, and indium.
  4. 上記第一の金属および第三の金属がそれぞれ、アルミニウム、マグネシウム、および金属シリコンからなる群より選択される少なくとも一種の金属である、請求項１～３の何れか一項に記載の金属化フィルム。 The metallized film according to any one of claims 1 to 3, wherein the first metal and the third metal are each at least one metal selected from the group consisting of aluminum, magnesium, and metal silicon. .
  5. 上記第一～第三の金属からなる膜の合計の膜抵抗値が、６～６０Ω／□である、請求項１～４の何れか一項に記載の金属化フィルム。 The metallized film according to any one of claims 1 to 4, wherein a total film resistance of the film made of the first to third metals is 6 to 60Ω / □.
  6. 上記第一～第三の金属からなる膜が、蒸着によって形成されている、請求項１～５の何れか一項に記載の金属化フィルム。 The metallized film according to any one of claims 1 to 5, wherein the film made of the first to third metals is formed by vapor deposition.
  7. 請求項１～６の何れか一項に記載の金属化フィルムを巻回してなる、フィルムコンデンサ。 A film capacitor obtained by winding the metallized film according to any one of claims 1 to 6.
  8. プラスチックフィルムの片面に、酸化物のバンドギャップが５ｅＶ以上である第一の金属からなる膜と、酸化物のバンドギャップが５ｅＶ未満である第二の金属からなる膜とをこの順に備える第一の金属化フィルムと、
    プラスチックフィルムの片面に、酸化物のバンドギャップが５ｅＶ以上である第三の金属からなる膜を備える第二の金属化フィルムと、を含み、
    上記第一の金属化フィルムと第二の金属化フィルムとを、上記膜を備えていないプラスチックフィルムの面同士を接触させた状態で巻回してなる、フィルムコンデンサ。     A first film including, on one surface of a plastic film, a film made of a first metal having an oxide band gap of 5 eV or more and a film made of a second metal having an oxide band gap of less than 5 eV in this order. Metallized film,
    A second metallized film including a film made of a third metal having a band gap of oxide of 5 eV or more on one surface of the plastic film,
    A film capacitor, wherein the first metallized film and the second metallized film are wound with the surfaces of the plastic films not provided with the film in contact with each other.
PCT/JP2019/030650 2018-08-08 2019-08-05 Metalized film and film capacitor WO2020031939A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03106722U (en) * 1990-02-19 1991-11-05
JPH09111439A (en) * 1995-10-12 1997-04-28 Toray Ind Inc Vapor-deposited film and capacitor using the film
JPH10189382A (en) * 1996-12-20 1998-07-21 Mitsubishi Shindoh Co Ltd Zinc deposition film and metallization film capacitor
WO2002101770A1 (en) * 2001-06-08 2002-12-19 Matsushita Electric Industrial Co., Ltd. Metallized film capacitor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03106722U (en) * 1990-02-19 1991-11-05
JPH09111439A (en) * 1995-10-12 1997-04-28 Toray Ind Inc Vapor-deposited film and capacitor using the film
JPH10189382A (en) * 1996-12-20 1998-07-21 Mitsubishi Shindoh Co Ltd Zinc deposition film and metallization film capacitor
WO2002101770A1 (en) * 2001-06-08 2002-12-19 Matsushita Electric Industrial Co., Ltd. Metallized film capacitor

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