WO2020024347A1 - Oled显示装置 - Google Patents

Oled显示装置 Download PDF

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Publication number
WO2020024347A1
WO2020024347A1 PCT/CN2018/102466 CN2018102466W WO2020024347A1 WO 2020024347 A1 WO2020024347 A1 WO 2020024347A1 CN 2018102466 W CN2018102466 W CN 2018102466W WO 2020024347 A1 WO2020024347 A1 WO 2020024347A1
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Prior art keywords
layer
display device
inorganic layer
inorganic
oled
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PCT/CN2018/102466
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English (en)
French (fr)
Inventor
陶庆良
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武汉华星光电半导体显示技术有限公司
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Priority to US16/317,581 priority Critical patent/US20200127216A1/en
Publication of WO2020024347A1 publication Critical patent/WO2020024347A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the invention relates to the technical field of display driving, and in particular to an OLED display device.
  • OLED organic electroluminescent diode
  • the thin film package is generally a sandwich structure. Two inorganic layers play a role of isolating water and oxygen, and an organic layer sandwiched between them serves as a flat buffer. If the interface between the two inorganic layers in the non-display area and the driver layer is not in good contact, water and oxygen will easily penetrate along the shorter interface, which will cause the OLED device to fail. Secondly, once a crack occurs on the surface of the driver layer, the non-stress release space will The thin film encapsulation film layer in the display area directly causes damage, and water and oxygen enter the OLED device along the crack, causing the device to fail.
  • the invention provides an OLED display device, which can protect the OLED device from oxidation caused by water vapor corrosion to solve the existing OLED display device. Due to the poor contact between the two inorganic layers of the non-display area packaging layer and the TFT driving layer or the TFT driving layer, Cracks are generated on the surface of the driving layer, and water and oxygen easily penetrate into the inside of the OLED device, which causes technical problems such as the OLED device being oxidized and the performance of the OLED device being reduced.
  • the present invention provides an OLED display device including a flexible substrate, a TFT layer, an OLED light-emitting layer, and a packaging film layer; wherein the flexible substrate includes a display area and a non-display area located at one end of the display area, and the TFT A portion of the layer located in the non-display area is provided with at least two grooves, and the encapsulation film layer includes a first inorganic layer, an organic layer, and a second inorganic layer, which are disposed in a stack, and the first inorganic layer and the second An inorganic layer extends from the display area to a non-display area, and the first inorganic layer and the second inorganic layer cover the trench.
  • a portion of the TFT layer corresponding to the non-display area includes a buffer layer, a gate insulating layer, and an inter-insulating layer.
  • the groove is disposed on a surface of the buffer layer.
  • the trench is disposed on a surface of the gate insulating layer.
  • a slope of a sidewall of the groove is less than or equal to 60 °.
  • the width of the groove is the same as the distance between two adjacent grooves.
  • a material used for the flexible substrate is polyimide.
  • the material of the first inorganic layer and the second inorganic layer is silicon nitride, and the material of the organic layer is an acrylate polymer.
  • the thickness of the first inorganic layer is 0.1 to 1 micrometer.
  • the thickness of the second inorganic layer is the same as the thickness of the first inorganic layer, and the thickness of the organic layer is greater than the thickness of the first inorganic layer and the second Sum of the thickness of the inorganic layer.
  • the OLED display device provided by the present invention, at least two grooves are etched on the TFT layer in the non-display area, which makes it difficult for water and oxygen to penetrate, thereby enhancing the ability of the packaging film layer to isolate water and oxygen, and reducing the internal OLED display device.
  • the risk of the device being oxidized also relieves the crack propagation stress of the substrate.
  • FIG. 1 is a schematic structural diagram of an OLED display device according to the present invention.
  • FIG. 1A is a schematic diagram of a trench structure solution for a non-display area of an OLED display device according to the present invention.
  • FIG. 1B is a second schematic diagram of a trench structure scheme of a non-display area of an OLED display device according to the present invention.
  • FIG. 2 is a schematic diagram of the structure of an OLED packaging film layer of the present invention.
  • the present invention is directed to an existing OLED display device. Due to poor contact between the two inorganic layers of the non-display area and the TFT driving layer or cracks on the surface of the TFT driving layer, water and oxygen easily penetrate into the inside of the OLED device, causing the OLED device to be oxidized and caused The technical problem that the performance of the OLED device is reduced, such as the service life, can be solved by this embodiment.
  • the present invention provides an OLED display device.
  • the OLED display device of the present invention includes a flexible substrate 101, a TFT layer 102, an OLED light-emitting layer 103, and a packaging film layer 104.
  • a glass substrate is provided, and a flexible substrate 101 is coated on the surface of the glass substrate.
  • the material of the flexible substrate 101 is a polyimide film, and the flexible substrate 101 is a wear-resistant transparent plastic film.
  • the flexible substrate 101 includes a display area and a non-display area disposed outside the display area; the TFT layer 102 is deposited on the flexible substrate 101, and a portion of the TFT layer 102 located in the non-display area includes A buffer layer, a gate insulating layer and an inter-insulating layer provided; at least two grooves are provided in a portion of the TFT layer 102 corresponding to the non-display area; the OLED light emitting layer 103 is deposited on the TFT layer 102 ;
  • the packaging film layer includes a first inorganic layer, an organic layer, and a second inorganic layer that are arranged in a stack, the first inorganic layer and the second inorganic layer extending from the display area to the non-display area, and the A first inorganic
  • the slope of the trench is less than or equal to 60 °; the width of the trench is the same as the distance between two adjacent trenches; the depth of the trench is greater than that of the first inorganic layer and The sum of the thickness of the second inorganic layer.
  • FIG. 1A is a schematic diagram of a trench structure solution for a non-display area of an OLED display device according to the present invention.
  • the portion of the TFT layer located in the non-display area includes a buffer layer 105, a gate insulating layer 106, and an inter-insulating layer 107 arranged in this order;
  • the buffer layer 105 is a silicon nitride layer and a silicon oxide layer that are arranged in an overlapping manner.
  • the gate insulating layer 106 includes a first gate insulating layer and a second gate insulating layer that are stacked, and the material of the first gate insulating layer is a silicon oxide compound, and the second gate insulating layer
  • the material of is a silicon nitride compound
  • the material of the inter-insulating layer 107 is the same as the material of the buffer layer.
  • the trench is disposed on a surface of the buffer layer 105.
  • FIG. 1B is a schematic diagram of a trench structure solution of a non-display area of an OLED display device according to the present invention.
  • the trench is disposed on a surface of the gate insulating layer 106.
  • a part of the packaging film of the OLED display device provided in the present invention in the display area includes: a first inorganic layer 202, an organic layer 203, a second inorganic layer 204, and a barrier layer 205 that are stacked on the surface of the OLED device 201
  • the OLED emitting layer 201 is deposited on a glass substrate surface.
  • the packaging film of the OLED display device provided by the present invention includes the first inorganic layer 202 and the second inorganic layer 204 in a part of the non-display area, and the first inorganic layer 202 and the second inorganic layer 204 are completely covered. The groove.
  • the material of the first inorganic layer 202 and the second inorganic layer 204 is silicon nitride, and the material of the organic layer 203 is an acrylate polymer;
  • the thickness of the first inorganic layer 202 is 0.1 ⁇ 1 micron, the thickness of the second inorganic layer 204 is the same as the thickness of the first inorganic layer 202, and the thickness of the organic layer 203 is greater than the thickness of the first inorganic layer 202 and the thickness of the second inorganic layer 204 Sum of thickness;
  • the organic layer 203 is located in the display area, and the organic layer is located on a side wall where the display area and the non-display area border, and is connected to the first inorganic layer 202.
  • the OLED device 201 includes a TFT layer and an OLED light-emitting layer.
  • a portion of the TFT layer located in the non-display area includes a buffer layer, a gate insulating layer, and an inter-insulating layer disposed in this order.
  • the trenches are disposed in the On the surface of the buffer layer or the gate insulating layer.
  • the slope of the sidewall of the etched trench is less than or equal to 60 °, so as to ensure the climbing ability of the inorganic film layer in the subsequent thin film encapsulation process.
  • a thin film encapsulation process is performed on the surface of the OLED device 201.
  • the thin film encapsulation process is as follows:
  • the first inorganic layer 202 is deposited on the OLED device 201. There is a barrier layer 205 near the boundary between the display area and the non-display area, and the first inorganic layer 202 covers the trench over the barrier layer 205; the barrier layer 205 is an organic layer, and the barrier layer 205 is located in the On the surface of the OLED device 201, the blocking layer 205 is closely surrounded by the first inorganic layer 202.
  • the first inorganic layer 202 is made of an inorganic material, such as an inorganic thin film such as silicon nitride or alumina; the first inorganic layer 202 is a hydrophilic thin film; and the thickness of the first inorganic layer 202 is preferably 0.1 to 1 micron, for example, 0.5 micron; the first inorganic layer 202 is preferably made by a plasma enhanced chemical vapor deposition method or an atomic layer deposition method.
  • the plasma enhanced chemical vapor deposition method uses a microwave or radio frequency to ionize a gas containing atoms of a thin film to form a plasma locally, and the plasma is highly chemically active and easily reacts. A desired film is deposited on the surface.
  • the atomic layer deposition method is a method in which substances can be plated layer by layer on the surface of a substrate in the form of a single atomic film.
  • the organic layer 203 is then deposited on the surface of the first inorganic layer 202.
  • a side wall of the organic layer 203 located at the boundary between the display area and the non-display area is blocked by the blocking layer 205, and the blocking layer 205 restricts a flow area of the organic layer 203.
  • the material of the organic layer 203 is an organic copolymer, preferably a polyacrylate; the thickness of the organic layer 203 is greater than the thickness of the first inorganic layer 202, preferably 0.5-3 microns, such as 2 microns; the organic The layer 203 is formed on the first inorganic layer 202 by a spraying technique; the printing ink used in the spraying technique is composed of the following components: an olefinic organic substance and a photopolymerization initiator; the enoic organic substance The mass percentage is 0.1% ⁇ 10%.
  • the second inorganic layer 204 is then deposited on the surface of the OLED device 201.
  • the second inorganic layer 204 covers the trench across the barrier layer 205.
  • the second inorganic layer 204 is made of an inorganic material, such as alumina, silicon dioxide, or silicon nitride.
  • the thickness of the second inorganic layer 204 is the same as the thickness of the first inorganic layer 204, and is preferably 0.1. -1 micron, for example, 0.5 micron; manufactured by plasma enhanced chemical vapor deposition or atomic layer deposition.
  • the second inorganic layer 204 completely covers the organic layer 203, and the second inorganic layer 204 and the first inorganic layer 202 are directly connected in a peripheral area, thereby sealing the organic layer 203 on the The two inorganic layers prevent water and oxygen from penetrating into the organic layer 203 from the surrounding area.
  • the second inorganic layer 204 completely covers the first inorganic layer 202 and completely covers the trench.
  • the existence of the grooves further enhances the ability of the OLED display device to block water and oxygen; secondly, the grooves can also play a role in releasing crack propagation stress on the surface of the substrate, preventing a space where the substrate is free of stress, It will directly cause damage to the packaging film layer in the non-display area, and water and oxygen enter the OLED device along the crack, causing a technical problem of device failure.
  • the OLED display device provided by the present invention etches at least two grooves on the TFT layer in the non-display area, which makes it difficult for water and oxygen to penetrate, thereby enhancing the ability of the packaging film layer to isolate water and oxygen, and reducing the OLED display.
  • the risk of oxidation of the devices inside the device also plays a role in releasing crack propagation stress on the substrate.

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  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
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  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

提供一种OLED显示装置，包括：柔性衬底；TFT层和OLED发光层，所述TFT层位于非显示区域的部分设有至少两个沟槽；封装膜层，所述封装膜层包括交叠设置的第一无机层、有机层和第二无机层，且所述第一无机层和所述第二无机层覆盖所述沟槽。

Description

OLED显示装置 技术领域
本发明涉及显示驱动技术领域，尤其涉及一种OLED显示装置。
 背景技术
目前有机电致发光二极管（OLED）器件因其可自发光，色彩还原度高，柔性可弯曲等优点被认为是传统LCD的理想替代品。但是，OLED器件对水、氧较为敏感，水、氧的渗透对器件的寿命影响很大，因此需要进行严格的封装。目前，行业内主要采用薄膜封装。
薄膜封装一般主要为三明治结构，两层无机层起隔绝水氧的作用，一层有机层夹在中间起平坦缓冲的作用。若非显示区域两层无机层与驱动层界面接触不好，水氧易沿着较短的界面渗入，造成OLED器件失效；其次，驱动层表面一旦产生裂纹，由于无应力释放的空间，会对非显示区域薄膜封装膜层直接造成损坏，水氧沿着裂纹进入OLED器件中，造成器件失效。
综上所述，现有技术的OLED显示装置，当非显示区域封装层中两层无机层与TFT层界面接触不好或TFT层表面产生裂纹时，水氧易渗入到OLED器件内部，造成OLED器件被氧化而导致OLED器件寿命等性能降低的技术问题。
 技术问题
现有技术的OLED显示装置，由于非显示区域封装层中两层无机层与TFT层界面接触不好或TFT层表面产生裂纹时，水氧易渗入到OLED器件内部，造成OLED器件被氧化而导致OLED器件寿命等性能降低。
 技术解决方案
本发明提供一种OLED显示装置，能够保护OLED器件免受水汽腐蚀而导致氧化，以解决现有的OLED显示装置，由于非显示区域封装层两层无机层与TFT驱动层界面接触不好或TFT驱动层表面产生裂纹，水氧易渗入到OLED器件内部，造成OLED器件被氧化而导致OLED器件寿命等性能降低的技术问题。
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种OLED显示装置，包括柔性衬底、TFT层、OLED发光层以及封装膜层；其中，所述柔性衬底包括显示区域以及位于所述显示区域一端的非显示区域，所述TFT层位于所述非显示区域的部分设有至少两个沟槽，所述封装膜层包括层叠设置的第一无机层、有机层和第二无机层，所述第一无机层和所述第二无机层从所述显示区域延伸到非显示区域，且所述第一无机层和所述第二无机层覆盖所述沟槽。
在本申请实施例所提供的OLED显示装置中，所述TFT层与所述非显示区域对应的部分包括缓冲层、栅极绝缘层以及间绝缘层。
在本申请实施例所提供的OLED显示装置中，所述沟槽设置在所述缓冲层的表面上。
在本申请实施例所提供的OLED显示装置中，所述沟槽设置在所述栅极绝缘层的表面上。
在本申请实施例所提供的OLED显示装置中，所述沟槽的侧壁的坡度小于或等于60°。
在本申请实施例所提供的OLED显示装置中，所述沟槽的宽度与相邻的两个所述沟槽之间的距离相同。
在本申请实施例所提供的OLED显示装置中，所述柔性衬底使用的材质为聚酰亚胺。
在本申请实施例所提供的OLED显示装置中，所述第一无机层和所述第二无机层的材质均为氮化硅，所述有机层的材质为烯酸酯类聚合物。
在本申请实施例所提供的OLED显示装置中，所述第一无机层的厚度为0.1~1微米。
在本申请实施例所提供的OLED显示装置中，所述第二无机层的厚度与所述第一无机层的厚度相同，所述有机层的厚度大于所述第一无机层与所述第二无机层的厚度之和。
 有益效果
本发明所提供的OLED显示装置，在非显示区域的TFT层上蚀刻出至少两圈沟槽，使水氧渗入难度增加，从而增强封装膜层隔绝水氧的能力，降低了OLED显示装置内部的器件被氧化的风险，同时也起到释放基板裂纹扩展应力的作用。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明OLED显示装置结构示意图。
图1A为本发明OLED显示装置非显示区域沟槽结构方案一示意图。
图1B为本发明OLED显示装置非显示区域沟槽结构方案二示意图。
图2为本发明OLED封装膜层结构示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有的OLED显示装置，由于非显示区域两层无机层与TFT驱动层界面接触不好或TFT驱动层表面产生裂纹，水氧易渗入到OLED器件内部，造成OLED器件被氧化而导致OLED器件寿命等性能降低的技术问题，本实施例能够解决该缺陷。
如图1所示，本发明提供一种OLED显示装置，本发明的OLED显示装置包括：柔性衬底101、TFT层102、OLED发光层103以及封装膜层104。
提供一玻璃基板，在所述玻璃基板的表面上涂布柔性衬底101，所述柔性衬底101的材料为聚酰亚胺膜，所述柔性衬底101为耐磨透明塑料薄膜；所述柔性衬底101包括显示区域和设置在所述显示区域外的非显示区域；所述TFT层102沉积于所述柔性衬底101上，所述TFT层102位于所述非显示区域的部分包括依次设置的缓冲层、栅极绝缘层以及间绝缘层；所述TFT层102与所述非显示区域对应的部分设有至少两个沟槽；所述OLED发光层103沉积于所述TFT层102上；所述封装膜层包括层叠设置的第一无机层、有机层和第二无机层，所述第一无机层和所述第二无机层从所述显示区域延伸到非显示区域，且所述第一无机层和所述第二无机层覆盖所述沟槽。最后，去除所述玻璃基板，得到所述OLED显示装置。其中，所述沟槽的坡度小于或等于60°；所述沟槽的宽度与相邻的两个所述沟槽之间的距离相同；所述沟槽的深度大于所述第一无机层与所述第二无机层的厚度之和。
图1A为本发明OLED显示装置非显示区域沟槽结构方案一示意图。其中，所述TFT层位于所述非显示区域的部分包括依次设置的缓冲层105、栅极绝缘层106以及间绝缘层107；所述缓冲层105为交叠设置的氮化硅层以及氧化硅层；所述栅极绝缘层106包括层叠设置的第一栅极绝缘层以及第二栅极绝缘层，所述第一栅极绝缘层的材料为氧化硅化合物，所述第二栅极绝缘层的材料为氮化硅化合物；所述间绝缘层107的材料与所述缓冲层的材料相同。所述沟槽设置在所述缓冲层105的表面上。
图1B为本发明OLED显示装置非显示区域沟槽结构方案一示意图。其中，所述沟槽设置在所述栅极绝缘层106的表面上。
如图2所示，本发明提供的OLED显示装置的封装薄膜在显示区域的部分包括：层叠设置在OLED器件201表面的第一无机层202、有机层203、第二无机层204以及阻挡层205；所述OLED发光层201沉积于一玻璃基板表面上。本发明提供的OLED显示装置的封装薄膜在非显示区域的部分包括所述第一无机层202以及所述第二无机层204，所述第一无机层202和所述第二无机层204完全覆盖所述沟槽。
所述第一无机层202和所述第二无机层204的材质均为氮化硅，所述有机层203的材质为烯酸酯类聚合物；所述第一无机层202的厚度为0.1~1微米，所述第二无机层204的厚度与所述第一无机层202的厚度相同，所述有机层203的厚度大于所述第一无机层202的厚度与所述第二无机层204的厚度之和；所述有机层203位于所述显示区域，所述有机层位于所述显示区域与所述非显示区域交界的侧壁与所述第一无机层202相连。
本发明在一玻璃基板上制作完所述OLED器件201后，首先在OLED器件201表面蚀刻出至少两圈沟槽。所述OLED器件201包括TFT层以及OLED发光层，，所述TFT层位于所述非显示区域的部分包括依次设置的缓冲层、栅极绝缘层以及间绝缘层，所述沟槽设置在所述缓冲层或所述栅极绝缘层的表面上。
优选地，蚀刻的沟槽的侧壁的坡度小于或等于60°，这样保证后续薄膜封装制程中无机膜层的爬坡能力。然后在所述OLED器件201表面进行薄膜封装制程，薄膜封装制程如下：
在所述OLED器件201上沉积所述第一无机层202。在显示区域与非显示区域分界附近有阻挡层205，所述第一无机层202越过所述阻挡层205覆盖所述沟槽；所述阻挡层205为有机层，所述阻挡层205位于所述OLED器件201的表面，所述阻挡层205周围被所述第一无机层202紧密包围。
优选地，所述第一无机层202为无机材料制备，例如氮化硅或氧化铝等无机薄膜；所述第一无机层202为亲水性薄膜；所述第一无机层202的厚度优选为0.1~1微米，例如0.5微米；所述第一无机层202优选采用等离子体增强化学气相沉积法或原子层沉积法工艺制作。其中等离子体增强化学气相沉积法是借助微波或射频等使含有薄膜组成原子的气体电离，在局部形成等离子体，而等离子体化学活性很强，很容易发生反应，从而在所述OLED器件201的表面上沉积出所期望的薄膜。而原子层沉积法是一种可以将物质以单原子膜形式一层一层的镀在基板表面的方法。
在所述OLED器件201的表面上沉积出第一无机层202后，接着在第一无机层202表面上沉积出所述有机层203。所述有机层203位于所述显示区域与所述非显示区域交界的侧壁被所述阻挡层205挡住，所述阻挡层205限制了所述有机层203的流动区域。
所述有机层203的材料为有机共聚物优选为聚烯酸酯；所述有机层203的厚度大于所述第一无机层202的厚度，优选为0.5-3微米，例如2微米；所述有机层203是通过喷涂技术形成于所述第一无机层202上；所述喷涂技术中所使用的打印墨水由如下组分组成：烯酸酯类有机物及光聚合引发剂；所述烯酸类有机物的质量百分比为0.1%~10%。
在所述第一无机层202上沉积出所述有机层203后，接着在所述OLED器件201的表面上沉积所述第二无机层204。所述第二无机层204越过所述阻挡层205覆盖所述沟槽。
所述第二无机层204为无机材料制备，例如为氧化铝、二氧化硅或氮化硅等；所述第二无机层204的厚度与所述第一无机层204的厚度相同，优选为0.1-1微米，例如为0.5微米；采用等离子体增强化学气相沉积法或原子层沉积法工艺制作。在显示区域，所述第二无机层204完全覆盖所述有机层203，且所述第二无机层204与所述第一无机层202在周边区域直接相连，从而将所述有机层203密封于两层无机层内，防止水氧从周边区域渗入所述有机层203。在非显示区域，所述第二无机层204完全覆盖所述第一无机层202，完全覆盖所述沟槽。所述沟槽的存在进一步增强了OLED显示装置阻隔水氧的能力；其次，所述沟槽也可以起到释放所述基板表面裂纹扩展应力的作用，防止了所述基板无应力释放的空间，会对非显示区域的封装膜层直接造成损坏，水氧沿着裂纹进入OLED器件中，造成器件失效的技术问题。
有益效果：本发明所提供的OLED显示装置，在非显示区域的TFT层上蚀刻出至少两圈沟槽，使水氧渗入难度增加，从而增强封装膜层隔绝水氧的能力，降低了OLED显示装置内部的器件被氧化的风险，同时也起到释放基板裂纹扩展应力的作用。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

  1. 一种OLED显示装置，其中，包括：
    柔性衬底，所述柔性衬底包括显示区域以及位于所述显示区域一端的非显示区域；
    TFT层和OLED发光层，位于所述柔性衬底上，所述TFT层位于所述非显示区域的部分设有至少两个沟槽；
    封装膜层，所述封装膜层包括层叠设置的第一无机层、有机层和第二无机层，所述第一无机层和所述第二无机层从所述显示区域延伸到非显示区域，且所述第一无机层和所述第二无机层覆盖所述沟槽。
  2. 根据权利要求1所述的OLED显示装置，其中，所述TFT层位于所述非显示区域的部分包括依次设置的缓冲层、栅极绝缘层以及间绝缘层。
  3. 根据权利要求2所述的OLED显示装置，其中，所述沟槽设置在所述缓冲层的表面上。
  4. 根据权利要求2所述的OLED显示装置，其中，所述沟槽设置在所述栅极绝缘层的表面上。
  5. 根据权利要求1所述的OLED显示装置，其中，所述沟槽的侧壁的坡度小于或等于60°。
  6. 根据权利要求5所述的OLED显示装置，其中，所述沟槽的宽度与相邻的两个所述沟槽之间的距离相同。
  7. 根据权利要求1所述的OLED显示装置，其中，所述柔性衬底使用的材质为聚酰亚胺。
  8. 根据权利要求1所述的OLED显示装置，其中，所述第一无机层和所述第二无机层的材质均为氮化硅，所述有机层的材质为烯酸酯类聚合物。
  9. 根据权利要求8所述的OLED显示装置，其中，所述第一无机层的厚度为0.1~1微米。
  10. 根据权利要求9所述的OLED显示装置，其中，所述第二无机层的厚度与所述第一无机层的厚度相同，所述有机层的厚度大于所述第一无机层与所述第二无机层的厚度之和。
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