WO2020020217A1 - Couche tampon de puce de cellule solaire à couche mince de cuivre-indium-gallium-sélénium et son procédé de fabrication, et puce de cellule solaire à couche mince de cuivre-indium-gallium-sélénium - Google Patents

Couche tampon de puce de cellule solaire à couche mince de cuivre-indium-gallium-sélénium et son procédé de fabrication, et puce de cellule solaire à couche mince de cuivre-indium-gallium-sélénium Download PDF

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WO2020020217A1
WO2020020217A1 PCT/CN2019/097469 CN2019097469W WO2020020217A1 WO 2020020217 A1 WO2020020217 A1 WO 2020020217A1 CN 2019097469 W CN2019097469 W CN 2019097469W WO 2020020217 A1 WO2020020217 A1 WO 2020020217A1
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layer
buffer layer
indium gallium
solar cell
cds
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Chinese (zh)
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曲铭浩
黄昭雄
蔡爱玲
汝小宁
刘闯
蒋宗佑
袁渝
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领凡新能源科技(北京)有限公司
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    • H—ELECTRICITY
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    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C—CHEMISTRY; METALLURGY
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the disclosure belongs to the technical field of solar cells, and particularly relates to a buffer layer of a copper indium gallium selenium thin film solar cell chip and a preparation method thereof, and a copper indium gallium selenium thin film solar cell chip.
  • CIGS copper indium gallium selenium
  • the structure of the cell is generally: substrate / Mo / CIGS / CdS / i-ZnO / ZnO: Al.
  • CIGS copper indium gallium selenium
  • i-ZnO is a high-resistance n-type semiconductor
  • ZnO: Al (AZO) is doped.
  • a hybrid low-resistance transparent conductive layer, i-ZnO and ZnO: Al (AZO) are used together as a window layer with a band gap width of about 3.37 eV; CdS is used as a buffer layer with a band gap width of 2.40 eV. If the p-n junction is formed by direct contact between CIGS and ZnO, their band gaps are too different, and because their lattice constants are also greatly different, the lattice matching is not good during direct contact, which affects the output performance of photovoltaic cells. Therefore, a thin layer of CdS (about 50 nm) is generally added between CIGS and ZnO as a buffer layer to form a CIGS / CdS / ZnO structure.
  • CdS chemical water bath
  • MOCVD metal organic chemical deposition
  • PVD physical vapor deposition
  • the chemical water bath method is the most common.
  • the deposited CdS has the characteristics of no pinholes and dense structure, but a large amount of cadmium-containing hazardous waste liquid is generated during the chemical water bath deposition process.
  • cadmium is relatively toxic, and the air and food contaminated by cadmium are serious harm to the human body, and its metabolism is slow in the human body.
  • physical vapor deposition produces only a small amount of solid powder, which has the least pollution to the environment.
  • the principle of the conventional physical gas-machined CdS deposition method is as follows: under the action of an electric field, Ar ions are ionized, and accelerated formation of high-energy particles bombards the CdS target, the atoms in the target are sputtered out, and deposited on the substrate surface to form a thin film.
  • the lattice mismatch between CdS and CIGS thin films grown by physical gas deposition is relatively low, about 1.4%, and it is easy to grow epitaxially on CIGS.
  • Some embodiments of the present disclosure provide a buffer layer of a copper indium gallium selenium thin film solar cell chip.
  • the buffer layer is a cadmium sulfide buffer layer, and the cadmium sulfide buffer layer is used for depositing the copper indium gallium selenium thin film solar cell chip.
  • the cadmium sulfide buffer layer includes a CdS layer epitaxially grown on the absorption layer, and a nanocrystalline CdS layer far from the absorption layer.
  • the cadmium sulfide buffer layer is a CdS: O buffer layer.
  • CdS: O refers to the doping of O in the host CdS.
  • Some embodiments of the present disclosure also provide a copper-indium-gallium-selenium thin-film solar cell chip, which includes: a copper-indium-gallium-selenium thin-film solar cell chip, the buffer layer of any of the copper-indium-gallium-selenium thin-film solar cell chips, A layer is disposed on the copper indium gallium selenium absorption layer.
  • Some embodiments of the present disclosure also provide a method for preparing a buffer layer of the copper indium gallium selenium thin film solar cell chip, comprising: forming an epitaxially grown CdS layer on an absorption layer of the copper indium gallium selenium thin film solar cell chip. And a step of forming a nanocrystalline CdS layer in an oxygen-containing atmosphere.
  • FIG. 1 is a schematic diagram of a coating device used in Embodiment 1 of the present disclosure
  • FIG. 2 is a schematic structural diagram of a copper indium gallium selenium thin film solar cell chip provided by some embodiments of the present disclosure
  • Example 3 is a photoelectric conversion efficiency chart of a solar cell module in Example 1 and Comparative Example 1 of the present disclosure
  • Example 4 is a long-term reliability TC200 attenuation diagram of a solar cell module in Example 1 and Comparative Example 1 of the present disclosure
  • FIG. 5 is an element distribution diagram at an interface of a buffer layer and an absorption layer in Embodiment 1 of the present disclosure
  • FIG. 6 is an element distribution diagram at the interface between the buffer layer and the absorption layer in Comparative Example 1 of the present disclosure
  • FIG. 7 is a schematic cross-sectional structure diagram of a cadmium sulfide buffer layer of a copper indium gallium selenium thin film solar cell chip provided by some embodiments of the present disclosure.
  • the lattice mismatch between CdS and CIGS films grown by physical meteorological deposition is relatively low, and it is easy to grow epitaxially on CIGS. Although this epitaxial growth is beneficial to reduce interfacial recombination, elements such as Cu in CIGS are also easily diffused into CdS, resulting in a large number of recombination centers, which affects battery efficiency and long-term reliability results.
  • the embodiments of the present disclosure also provide a cadmium sulfide buffer layer for a solar cell chip including a cadmium sulfide buffer layer, which can prevent or reduce the Cd element and the elements of the window layer (for example, cadmium sulfide buffer layer) Zn) in ZnO diffuses into the light absorbing layer, improving the battery efficiency and long-term reliability performance.
  • a cadmium sulfide buffer layer for a solar cell chip including a cadmium sulfide buffer layer, which can prevent or reduce the Cd element and the elements of the window layer (for example, cadmium sulfide buffer layer) Zn) in ZnO diffuses into the light absorbing layer, improving the battery efficiency and long-term reliability performance.
  • the cadmium sulfide buffer layer includes a nanocrystalline CdS thin layer, and the nanocrystalline CdS thin layer is composed of nano-sized crystals, which can prevent or reduce the Cd element and the elements of the window layer (such as ZnO) in the cadmium sulfide. Zn) diffuses into the light absorbing layer, improving battery efficiency and long-term reliability performance.
  • the nanocrystalline CdS thin layer may be formed by any preparation method known in the art, which is not limited in this embodiment.
  • a cadmium sulfide buffer layer can be prepared by sputtering, and a nanocrystalline CdS thin layer can be included in the prepared cadmium sulfide buffer layer by adjusting the process parameters and the gas introduced during the preparation process.
  • a cadmium sulfide buffer layer may be prepared according to an existing cadmium sulfide buffer layer process, and then a nanocrystalline CdS thin layer may be prepared on the cadmium sulfide buffer layer.
  • the nanocrystalline CdS thin layer can be prepared by sputtering or other methods. Other preparation methods include, but are not limited to, spin coating method, chemical water bath method (CBD), metal organic chemical deposition method (MOCVD), and the like.
  • the cadmium sulfide buffer layer includes a CdS layer epitaxially grown on the absorption layer, and a nanocrystalline CdS layer remote from the absorption layer.
  • the cadmium sulfide buffer layer is a CdS: O buffer layer.
  • the cadmium sulfide buffer layer introduces oxygen during the preparation process, so that the prepared cadmium sulfide buffer layer is oxygen-containing cadmium sulfide.
  • the introduction of oxygen can effectively increase the CdS band gap, reduce the absorption of light by CdS, and increase battery efficiency .
  • the regulation of the amount of oxygen and the power of each target material can promote the cadmium sulfide buffer layer to form a nanocrystalline CdS thin layer.
  • the cadmium sulfide buffer layer may introduce oxygen during a certain period of the preparation process, so that the prepared cadmium sulfide buffer layer includes nanocrystalline cadmium sulfide containing oxygen.
  • the CdS: O buffer layer 6 includes a CdS layer 61 epitaxially grown on the absorption layer, and a nanocrystalline CdS layer 62 remote from the absorption layer.
  • a cadmium sulfide buffer layer can be prepared by sputtering, by adjusting the amount of oxygen introduced and the power of each target, both epitaxial growth at the interface with CIGS can be achieved and interface recombination can be reduced; meanwhile, growth outside the interface can be achieved CdS nanocrystals can effectively prevent Cd and Zn from diffusing into the CIGS absorption layer.
  • the amount of oxygen doped by CdS: O close to the absorption layer is greater than the amount of doped oxygen of CdS: O far from the absorption layer.
  • CdS: O means that the host CdS is doped with O. The introduction of oxygen can promote the conversion of the generated cadmium sulfide to a nanocrystalline state.
  • O buffer layer 6 is initial (corresponding to the formation of a portion of the cadmium sulfide buffer layer near the absorption layer), a small amount of oxygen is passed in or not, so that a portion of the cadmium sulfide near the absorption layer can be Epitaxial growth on the absorption layer to reduce interfacial recombination; oxygen is passed in the subsequent preparation process to generate nanocrystalline cadmium sulfide.
  • the epitaxially grown CdS layer 61 has an oxygen doping amount of 10 to 20%, and the nanocrystalline CdS layer 62 has an oxygen doping amount of 20 to 45%.
  • Some embodiments of the present disclosure also provide a copper indium gallium selenium thin film solar cell chip, which includes: a copper indium gallium selenium thin film solar cell chip, and the buffer layer of the copper indium gallium selenium thin film solar cell chip, wherein the buffer layer is disposed On the copper indium gallium selenium absorption layer.
  • the above copper indium gallium selenium thin film solar cell chip may further include a back electrode layer disposed under the copper indium gallium selenium absorption layer and a window layer disposed over the copper indium gallium selenium absorption layer.
  • the window layer may include, for example, high resistance oxidation Zinc layer and AZO layer.
  • Some embodiments of the present disclosure also provide a method for preparing a buffer layer of a copper indium gallium selenium thin film solar cell chip.
  • the method includes: forming an epitaxially grown CdS on an absorption layer of the copper indium gallium selenium thin film solar cell chip.
  • the process of preparing the cadmium sulfide buffer layer by sputtering can be completed in one chamber.
  • the sputtering source includes at least two cadmium sulfide targets 11, 12, 13, and 14, and at least one of the cadmium sulfide targets 11 is more than the other cadmium sulfide targets 12, 13, 14.
  • the substrate 1 on which the copper-indium-gallium-selenium absorption layer is formed is passed through a high-power cadmium sulfide target 11 and then sequentially passed through the remaining cadmium sulfide targets 12, 13, and 14 by magnetron sputtering.
  • a buffer layer is deposited on the copper indium gallium selenium absorption layer.
  • the buffer layer prepared at this time is a CdS: O buffer layer, and the oxygen doping amount of CdS: O near the absorption layer is greater than the oxygen doping amount of CdS: O far from the absorption layer.
  • the probability that the cadmium sulfide target 11 with high power is combined with oxygen or oxygen atoms by magnetron sputtering is significantly smaller than the corresponding area of other cadmium sulfide targets (12, 13, 14) with low power, and can be used in the CIGS absorption layer.
  • CdS was epitaxially grown at the interface, and subsequently, nanocrystalline CdS was deposited on the epitaxially grown CdS due to the lower power of oxygen and the cadmium sulfide targets 12, 13, and 14.
  • the process of preparing the cadmium sulfide buffer layer by sputtering can be completed in two or more chambers.
  • the cadmium sulfide target in the first chamber has more power than the cadmium sulfide target in other chambers, and the first chamber is only inert gas (not oxygen), and the other chambers are inert gas and oxygen .
  • the ratio of inert gas and oxygen passing through other chambers can be optimized according to requirements, such as the CdS band gap.
  • the epitaxially grown CdS layer and nanocrystalline CdS layer may not have a clear film boundary, and there may also be a transitional microstructure.
  • This embodiment provides a method for preparing a buffer layer of a copper indium gallium selenium thin film solar cell chip, wherein the preparation process of the buffer layer is as follows:
  • the sputtering gas used for magnetron sputtering is an inert gas, and the reaction gas is oxygen.
  • the sputtering source includes at least two cadmium sulfide targets, and at least one cadmium sulfide target has more power than other cadmium sulfide targets.
  • the substrate formed with the copper indium gallium selenium absorption layer is passed through a high power cadmium sulfide target and then other low power cadmium sulfide target materials, and the copper indium gallium selenium is absorbed by the magnetron sputtering.
  • a CdS: O buffer layer was deposited on the layer.
  • the sputtering source includes four cadmium sulfide targets.
  • the power of one cadmium sulfide target is greater than the power of the remaining three cadmium sulfide targets, and the power of the remaining three cadmium sulfide targets is the same.
  • FIG. 1 is a cadmium sulfide preparation chamber 10 in a roll-to-roll apparatus.
  • the chamber 10 is provided with four cadmium sulfide targets 11, 12, 13 and 14, wherein the power of the first cadmium sulfide target (11) is higher than that of the remaining three cadmium sulfide targets (12, 13 and 14). Large, the power of the remaining three cadmium sulfide targets can be the same.
  • the chamber is vented with argon and oxygen.
  • the amount of oxygen doped on the side of the CdS: O buffer layer near the absorption layer is lower than the amount of doped oxygen on the side of the CdS: O buffer layer far from the absorption layer.
  • the inert gas in this embodiment is argon.
  • CdS: O refers to the doping of O in the host CdS.
  • the power ratio of two cadmium sulfide targets with different powers in this embodiment is 2: 1.
  • the molar ratio of inert gas to oxygen is 4: 1.
  • the temperature of the copper indium gallium selenium absorption layer is 600 ° C. Maintaining a high temperature of about 600 ° C on the surface to be deposited makes it easy for epitaxial growth of cadmium sulfide on the copper, indium, gallium, and selenium absorption layer, which is beneficial to reducing interfacial recombination.
  • the step of preparing a cadmium sulfide buffer layer is performed immediately after the step of preparing a copper indium gallium selenium absorption layer. When the copper indium gallium selenium absorption layer is prepared, the substrate generally needs to be maintained at about 600 ° C.
  • a cadmium sulfide buffer layer is prepared on the copper indium gallium selenium absorbing layer.
  • the surface to be deposited is about 600 ° C. Epitaxial growth on the indium gallium selenium absorption layer.
  • This embodiment also provides a buffer layer of a copper indium gallium selenium thin film solar cell chip obtained by the above preparation method.
  • the buffer layer is used for depositing on a copper indium gallium selenium thin film solar cell chip copper indium gallium selenium absorption layer.
  • the buffer layer is A CdS: O buffer layer, one side of the CdS: O buffer layer near the absorption layer includes epitaxially grown CdS, and one side of the CdS: O buffer layer remote from the absorption layer includes nanocrystalline CdS.
  • the buffer layer includes nanocrystalline CdS: O.
  • the amount of oxygen doped on the side of the CdS: O buffer layer near the absorption layer is 17%, and the amount of doped oxygen on the side of the CdS: O buffer layer far from the absorption layer is 35%.
  • a reactive gas used in magnetron sputtering is oxygen, and O is doped in CdS, and CdS easily grows into small nanocrystals. No longer epitaxial growth, can effectively prevent Cd from diffusing into the copper indium gallium selenium (CIGS) absorption layer, and the introduction of oxygen can effectively increase the CdS band gap, reduce CdS absorption of light, and increase battery efficiency.
  • CIGS copper indium gallium selenium
  • the introduction of oxygen can effectively increase the CdS band gap, reduce CdS absorption of light, and increase battery efficiency.
  • the deposition rate of the high-power cadmium sulfide target is large.
  • CdS can still be grown epitaxially at the interface of the CIGS absorption layer.
  • CdS is epitaxially grown at the interface of the CIGS absorption layer, and CdS nanocrystals are grown outside the interface of the CIGS absorption layer, which effectively prevents Cd from diffusing into the copper indium gallium selenium (CIGS) absorption layer and also prevents the buffer layer.
  • Metals in layers other than the above diffuse into the absorbing layer.
  • This embodiment also provides a copper indium gallium selenium thin film solar cell chip, which includes: a flexible substrate, a conductive layer, a copper indium gallium selenium absorption layer, the above-mentioned cadmium sulfide buffer layer, and a window layer, wherein the buffer layer is disposed on On the copper indium gallium selenium absorption layer.
  • each film layer of a copper indium gallium selenium thin film solar cell chip is continuously deposited on a stainless steel flexible substrate 1 by a roll coating device: a Ti / Mo barrier layer 2, Na-doped Mo layer 3, Mo layer 4, CIGS absorption layer 5, buffer layer 6, i-ZnO layer 7, AZO layer 8 described above, that is, this embodiment also provides copper including the above-mentioned film layer as shown in FIG. Indium gallium selenium thin film solar cell chip.
  • i-ZnO is a high-resistance n-type semiconductor
  • AZO is ZnO: Al
  • i-ZnO layer 7 is used as a window layer
  • Ti / Mo barrier layer 2 is used as a window layer
  • Ti / Mo barrier layer 2 is used as a window layer
  • Ti / Mo barrier layer 2 is used as a window layer
  • Ti / Mo barrier layer 2 is used as a window layer
  • Ti / Mo barrier layer 2 Na-doped Mo layer 3
  • Mo layer 4 are used as Conductive layer.
  • ZnO: Al refers to the doped Al in the host ZnO.
  • the thickness of the Ti / Mo barrier layer 2 is about 400 nm
  • the thickness of the Na-doped Mo layer 3 is about 240 nm
  • the thickness of the Mo layer 4 is about 200 nm
  • the thickness of the CIGS absorption layer 5 is about 1.5 um
  • the thickness of the buffer layer 6 is about 50 nm.
  • the i-ZnO layer 7 has a thickness of about 80 nm
  • the AZO layer 8 has a thickness of about 200 nm.
  • the buffer layer in this embodiment is prepared, Ar and O 2 are passed into the buffer layer deposition chamber, the Ar flow rate is 200 sccm, the O 2 flow rate is 50 sccm, and the pressure in the buffer layer deposition chamber is 2 Pa.
  • One cadmium sulfide target has a power of 800W, and the second, third and fourth cadmium sulfide targets have a power of 400W.
  • the substrate temperature was room temperature.
  • the copper indium gallium selenium thin film solar cell chip in this embodiment is assembled into a plurality of solar cell modules.
  • the average photoelectric conversion efficiency of the plurality of solar cell modules is measured to be 14.5%.
  • the average attenuation rate of a plurality of solar cell modules after long-term reliability cold-heat cycles 200 times (TC200) is -0.9%.
  • the element distribution at the interface between the CdS: O buffer layer and the CIGS absorption layer obtained by secondary ion mass spectrometry is shown in Fig. 5. It can be seen that almost no Cu element has diffused into the CdS: O buffer layer.
  • a TEM (Transmission Electron Microscope) test was performed on the sample, and it was found that the side of the CdS: O buffer layer near the absorption layer was epitaxially grown CdS, and the side far from the absorption layer was formed to contain oxygen Nanocrystalline CdS.
  • the nanocrystalline CdS in the buffer layer can effectively prevent Cd from diffusing into the copper indium gallium selenium (CIGS) absorption layer, and the introduction of oxygen can effectively increase the CdS band gap.
  • the buffer layer not only has the function of buffering, but also has the function of preventing metal diffusion.
  • a method for preparing a buffer layer of a copper indium gallium selenium thin film solar cell chip is oxygen, and O is doped in CdS, and CdS is easy to grow into small nanometers.
  • the crystal is no longer epitaxially grown.
  • at least one cadmium sulfide target is more powerful than other cadmium sulfide targets, and the high-power cadmium sulfide target is arranged upstream, and is sputter deposited on the substrate first.
  • the deposition rate of the high-power cadmium sulfide target is large.
  • the probability of the cadmium sulfide particles from high-power cadmium sulfide target binding to oxygen or oxygen atoms by magnetron sputtering is significantly smaller than other low-power cadmium sulfide target areas.
  • the buffer layer formed in this way can effectively prevent Cd from diffusing into the copper indium gallium selenium (CIGS) absorbing layer, and it can also prevent metals in layers other than the buffer layer from diffusing into the absorbing layer, such as the window layer.
  • the diffusion of metal zinc into the buffer layer can also prevent the copper in the absorption layer from diffusing into the buffer layer, which improves the long-term reliability of the battery and has a lower energy attenuation.
  • Comparative Example 1 is also provided in the present disclosure to illustrate the technical effects of the technical solutions of the present disclosure.
  • the preparation method of the copper indium gallium selenium thin film solar cell chip used in Comparative Example 1 is different from that in Example 1 only in that:
  • a CdS buffer layer is deposited on the copper indium gallium selenium absorption layer of the copper indium gallium selenium thin film solar cell chip by magnetron sputtering.
  • the difference between the copper indium gallium selenium thin film solar cell chip formed in Comparative Example 1 and the sample in Example 1 is that the buffer layer is the CdS buffer layer prepared by the process method in Comparative Example 1.
  • the preparation process of the other layers of the solar cell chip is exactly the same as the preparation process of the sample in Example 1.
  • the copper indium gallium selenium thin film solar cell chip in Comparative Example 1 was assembled into a plurality of solar cell modules and tested. As shown in FIG. 3, the average photoelectric conversion efficiency of the plurality of solar cell modules of Comparative Example 1 was measured to be 12.6%. As shown in FIG. 4, it is measured that the average attenuation rate of the plurality of solar cell modules of Comparative Example 1 after long-term reliability cold-heat cycles 200 times (TC200) is -9.1%.
  • the element distribution at the interface between the CdS: O buffer layer and the CIGS absorption layer was obtained by secondary ion mass spectrometry measurement as shown in FIG. 6. It can be seen that the Cu element in the absorption layer in Comparative Example 1 diffused into the CdS buffer layer.
  • the cadmium sulfide absorption layer in the sample of Comparative Example 1 was an epitaxially grown CdS layer, and no nanocrystalline CdS was formed. Therefore, in conjunction with Figures 5 and 6, the inventors concluded that the nanocrystalline CdS layer can prevent or reduce the diffusion of Cd elements in the cadmium sulfide buffer layer and elements of the window layer (such as Zn in ZnO) into the light absorption layer; it can also prevent absorption The metal in the layer diffuses into the buffer layer.
  • This embodiment provides a method for preparing a buffer layer of a copper indium gallium selenium thin film solar cell chip, including the following steps:
  • the sputtering gas used for magnetron sputtering is inert gas helium and the reactive gas is oxygen.
  • the sputtering source includes four cadmium sulfide targets, one of which has a higher power than the remaining three cadmium sulfide targets.
  • a CdS: O buffer layer is deposited on the copper indium gallium selenium absorption layer of the copper indium gallium selenium thin film solar cell chip by magnetron sputtering under the above conditions.
  • the power ratio of two cadmium sulfide targets with different powers is 3: 1.
  • the molar ratio of the inert gas helium to oxygen is 2: 1.
  • the working pressure of the magnetron sputtering is 1 Pa.
  • the power of one cadmium sulfide target is greater than the power of the remaining three cadmium sulfide targets, and the power of the remaining three cadmium sulfide targets. the same.
  • the power of the high-power cadmium sulfide target is 900W, and the power of the low-power cadmium sulfide target is 300W.
  • the temperature of the copper indium gallium selenium absorption layer is 700 ° C.
  • This embodiment provides a buffer layer of a copper indium gallium selenium thin film solar cell chip obtained by the above preparation method.
  • the buffer layer is used for depositing on a copper indium gallium selenium thin film solar cell chip copper indium gallium selenium absorption layer, and the buffer layer is CdS.
  • O buffer layer O buffer layer, one side of the CdS: O buffer layer near the absorption layer includes epitaxially grown CdS, and one side of the CdS: O buffer layer remote from the absorption layer includes nanocrystalline CdS.
  • the buffer layer includes nanocrystalline CdS: O.
  • the amount of oxygen doped on the side of the CdS: O buffer layer near the absorption layer is 12%, and the amount of doped oxygen on the side of the CdS: O buffer layer far from the absorption layer is 40%.
  • the thickness of the buffer layer is 30 nm.
  • a reactive gas used in magnetron sputtering is oxygen, and O is doped in CdS, and CdS easily grows into small nanocrystals. No longer epitaxial growth, can effectively prevent Cd from diffusing into the copper indium gallium selenium (CIGS) absorption layer, and the introduction of oxygen can effectively increase the CdS band gap, reduce CdS absorption of light, and increase battery efficiency.
  • CIGS copper indium gallium selenium
  • the introduction of oxygen can effectively increase the CdS band gap, reduce CdS absorption of light, and increase battery efficiency.
  • the deposition rate of the high-power cadmium sulfide target is large.
  • CdS can be epitaxially grown at the interface of the CIGS absorption layer, and CdS nanocrystals can be grown outside the interface of the CIGS absorption layer, effectively preventing Cd from moving toward copper, indium, and gallium Diffusion in the selenium (CIGS) absorption layer can also prevent metals in layers other than the buffer layer from diffusing into the absorption layer.
  • This embodiment also provides a copper indium gallium selenium thin film solar cell chip, which includes a flexible substrate, a conductive layer, a copper indium gallium selenium absorbing layer, a buffer layer, and a window layer of the above copper indium gallium selenium thin film solar cell chip.
  • each film layer shown in FIG. 2 is continuously deposited on a stainless steel flexible substrate by a roll-type coating device: a Ti / Mo barrier layer, a Na-doped Mo layer, a Mo layer, a CIGS absorption layer, a buffer layer, i-ZnO layer and AZO layer.
  • i-ZnO is a high-resistance n-type semiconductor
  • AZO is ZnO: Al
  • an i-ZnO layer is used as a window layer
  • a Ti / Mo barrier layer is used as a Ti / Mo barrier layer
  • a Na-doped Mo layer is used as conductive layers.
  • the thickness of the Ti / Mo barrier layer is about 400nm
  • the thickness of the Na-doped Mo layer is about 240nm
  • the thickness of the Mo layer is about 200nm
  • the thickness of the CIGS absorption layer is about 1.5um
  • the thickness of the buffer layer is about 50nm
  • the thickness of the i-ZnO layer is about 80 nm.
  • the buffer layer in this embodiment is prepared, Ar and O 2 are passed into the buffer layer deposition chamber, the Ar flow rate is 200 sccm, the O 2 flow rate is 50 sccm, and the substrate temperature is room temperature.
  • the copper indium gallium selenium thin film solar cell chip was assembled into a plurality of solar cell modules, and the average photoelectric conversion efficiency of the plurality of solar cell modules was measured to be 16%.
  • the average attenuation rate of a plurality of solar cell modules after long-term reliability cold and heat cycles 200 times (TC200) is 1%.
  • This embodiment provides a method for preparing a buffer layer of a copper indium gallium selenium thin film solar cell chip, including the following steps:
  • the sputtering gas used for magnetron sputtering is inert gas argon and the reactive gas is oxygen.
  • the sputtering source includes five cadmium sulfide targets, one of which has a power higher than that of the remaining four cadmium sulfide targets.
  • the two cadmium sulfide targets with large and high power have the same power, and the other four cadmium sulfide targets have the same power.
  • a CdS: O buffer layer is deposited on a copper indium gallium selenium absorption layer of a copper indium gallium selenium thin film solar cell chip by magnetron sputtering, and one side of the CdS: O buffer layer near the absorption layer includes CdS is epitaxially grown, and a side of the CdS: O buffer layer remote from the absorption layer includes nanocrystalline CdS.
  • the amount of oxygen doped on the side of the CdS: O buffer layer near the absorption layer is lower than the amount of doped oxygen on the side of the CdS: O buffer layer far from the absorption layer.
  • the inert gas in this embodiment is argon.
  • CdS: O refers to the doping of O in the host CdS.
  • the power ratio of two cadmium sulfide targets with different powers in this embodiment is 2: 1.
  • the molar ratio of the inert gas argon to oxygen is 6: 1.
  • the working pressure of the magnetron sputtering is 10 Pa
  • the power of the high-power cadmium sulfide target is 800W
  • the power of the low-power cadmium sulfide target is 400W.
  • the temperature of the copper indium gallium selenium absorption layer is 800 ° C.
  • This embodiment provides a buffer layer of a copper indium gallium selenium thin film solar cell chip obtained by the above-mentioned preparation method.
  • the buffer layer is used for depositing on a copper indium gallium selenium thin film solar cell chip copper indium gallium selenium absorption layer.
  • the buffer layer includes nanocrystalline CdS: O.
  • the amount of oxygen doped on the side of the CdS: O buffer layer near the absorption layer is 16%, and the amount of doped oxygen on the side of the CdS: O buffer layer far from the absorption layer is 34%.
  • the thickness of the buffer layer is 70 nm.
  • a reactive gas used in magnetron sputtering is oxygen, and O is doped in CdS, and CdS easily grows into small nanocrystals. No longer epitaxial growth, can effectively prevent Cd from diffusing into the copper indium gallium selenium (CIGS) absorption layer, and the introduction of oxygen can effectively increase the CdS band gap, reduce CdS absorption of light, and increase battery efficiency.
  • CIGS copper indium gallium selenium
  • the introduction of oxygen can effectively increase the CdS band gap, reduce CdS absorption of light, and increase battery efficiency.
  • the deposition rate of the high-power cadmium sulfide target is large.
  • CdS can be epitaxially grown at the interface of the CIGS absorption layer, and CdS nanocrystals can be grown outside the interface of the CIGS absorption layer, effectively preventing Cd from moving toward copper, indium, and gallium.
  • Diffusion in the selenium (CIGS) absorption layer can also prevent metals in layers other than the buffer layer from diffusing into the absorption layer.
  • This embodiment also provides a copper indium gallium selenium thin film solar cell chip, which includes: a flexible substrate, a conductive layer, a copper indium gallium selenium thin film absorption layer, a buffer layer, and a window layer of the copper indium gallium selenium thin film solar cell chip.
  • each film layer shown in FIG. 2 is continuously deposited on a stainless steel flexible substrate by a roll-type coating device: a Ti / Mo barrier layer, a Na-doped Mo layer, a Mo layer, a CIGS absorption layer, a buffer layer, i-ZnO layer and AZO layer.
  • i-ZnO is a high-resistance n-type semiconductor
  • AZO is ZnO: Al
  • an i-ZnO layer is used as a window layer
  • a Ti / Mo barrier layer is used as a Ti / Mo barrier layer
  • a Na-doped Mo layer is used as conductive layers.
  • the thickness of the Ti / Mo barrier layer is about 400nm
  • the thickness of the Na-doped Mo layer is about 240nm
  • the thickness of the Mo layer is about 200nm
  • the thickness of the CIGS absorption layer is about 1.5um
  • the thickness of the buffer layer is about 50nm
  • the thickness of the i-ZnO layer is about 80 nm.
  • Ar and O2 are introduced into the buffer layer deposition chamber, and the flow rate of Ar is 250 sccm and the flow rate of O2 is 60 sccm.
  • the substrate temperature was room temperature.
  • the copper indium gallium selenium thin film solar cell chip was assembled into a plurality of solar cell modules, and the average photoelectric conversion efficiency of the plurality of solar cell modules was measured to be 15.9%.
  • the average attenuation rate of a plurality of solar cell modules after long-term reliability cold and heat cycles 200 times (TC200) was 1.1%.
  • This embodiment provides a method for preparing a buffer layer of a copper indium gallium selenium thin film solar cell chip, including the following steps:
  • the sputtering gas used for magnetron sputtering is inert gas argon and the reactive gas is oxygen.
  • the sputtering source includes six cadmium sulfide targets, of which the power of three cadmium sulfide targets is higher than that of the remaining three cadmium sulfide targets.
  • the three cadmium sulfide targets with large and high power have the same power, and the other three cadmium sulfide targets have the same power.
  • a CdS: O buffer layer is deposited on the copper indium gallium selenium absorption layer of the copper indium gallium selenium thin film solar cell chip by magnetron sputtering under the above conditions.
  • the power ratio of the two cadmium sulfide targets with different powers in this embodiment is 15: 7.
  • the molar ratio of the inert gas argon to oxygen is 10: 1.
  • the working pressure of the magnetron sputtering is 20 Pa
  • the power of the high-power cadmium sulfide target is 750W
  • the power of the low-power cadmium sulfide target is 350W.
  • the temperature of the copper indium gallium selenium absorption layer is 750 ° C.
  • This embodiment provides a buffer layer of a copper indium gallium selenium thin film solar cell chip obtained by the above preparation method.
  • the buffer layer is used for depositing on a copper indium gallium selenium thin film solar cell chip copper indium gallium selenium absorption layer, and the buffer layer is CdS.
  • O buffer layer O buffer layer, one side of the CdS: O buffer layer near the absorption layer includes epitaxially grown CdS, and one side of the CdS: O buffer layer remote from the absorption layer includes nanocrystalline CdS.
  • the buffer layer includes nanocrystalline CdS: O.
  • the amount of oxygen doped on the side of the CdS: O buffer layer near the absorption layer is 11%, and the amount of doped oxygen on the side of the CdS: O buffer layer far from the absorption layer is 33%.
  • the thickness of the buffer layer is 40 nm.
  • a reactive gas used in magnetron sputtering is oxygen, and O is doped in CdS, and CdS easily grows into small nanocrystals. No longer epitaxial growth, can effectively prevent Cd from diffusing into the copper indium gallium selenium (CIGS) absorption layer, and the introduction of oxygen can effectively increase the CdS band gap, reduce CdS absorption of light, and increase battery efficiency.
  • CIGS copper indium gallium selenium
  • the introduction of oxygen can effectively increase the CdS band gap, reduce CdS absorption of light, and increase battery efficiency.
  • the deposition rate of the high-power cadmium sulfide target is large.
  • CdS can be epitaxially grown at the interface of the CIGS absorption layer, and CdS nanocrystals can be grown outside the interface of the CIGS absorption layer, effectively preventing Cd from moving toward copper, indium, and gallium.
  • Diffusion in the selenium (CIGS) absorption layer can also prevent metals in layers other than the buffer layer from diffusing into the absorption layer.
  • This embodiment also provides a copper indium gallium selenium thin film solar cell chip, which includes: a flexible substrate, a conductive layer, a copper indium gallium selenium thin film absorption layer, a buffer layer, and a window layer of the copper indium gallium selenium thin film solar cell chip.
  • each film layer shown in FIG. 2 is continuously deposited on a stainless steel flexible substrate by a roll-type coating device: a Ti / Mo barrier layer, a Na-doped Mo layer, a Mo layer, a CIGS absorption layer, a buffer layer, i-ZnO layer and AZO layer.
  • i-ZnO is a high-resistance n-type semiconductor
  • AZO is ZnO: Al
  • an i-ZnO layer is used as a window layer
  • a Ti / Mo barrier layer is used as a Ti / Mo barrier layer
  • a Na-doped Mo layer is used as conductive layers.
  • the thickness of the Ti / Mo barrier layer is about 400nm
  • the thickness of the Na-doped Mo layer is about 240nm
  • the thickness of the Mo layer is about 200nm
  • the thickness of the CIGS absorption layer is about 1.5um
  • the thickness of the buffer layer is about 50nm
  • the thickness of the i-ZnO layer is about 80 nm.
  • the buffer layer in this embodiment is prepared, Ar and O2 are passed into the buffer layer deposition chamber, the flow rate of Ar is 300 sccm, and the flow rate of O2 is 40 sccm.
  • the substrate temperature was room temperature.
  • the copper indium gallium selenium thin film solar cell chip was assembled into a plurality of solar cell modules, and the average photoelectric conversion efficiency of the plurality of solar cell modules was measured to be 14%.
  • the average attenuation rate of a plurality of solar cell modules after long-term reliability cold and heat cycles 200 times (TC200) is 9%.
  • This embodiment provides a method for preparing a buffer layer of a copper indium gallium selenium thin film solar cell chip, and the difference from the method in embodiment 1 is:
  • the amount of oxygen doped on the side of the CdS: O buffer layer near the absorption layer is 10%, and the amount of doped oxygen on the side of the CdS: O buffer layer far from the absorption layer is 20%.
  • the power ratio of two cadmium sulfide targets with different powers in this embodiment is 5: 1.
  • the working pressure of the magnetron sputtering is 5Pa
  • the power of the high-power cadmium sulfide target is 2000W
  • the power of the low-power cadmium sulfide target is 400W.
  • This embodiment provides a method for preparing a buffer layer of a copper indium gallium selenium thin film solar cell chip. The difference from the method in embodiment 1 is:
  • the amount of oxygen doped on the side of the CdS: O buffer layer near the absorption layer is 20%, and the amount of doped oxygen on the side of the CdS: O buffer layer far from the absorption layer is 45%.
  • the power ratio of two cadmium sulfide targets with different powers in this embodiment is 4: 1.
  • the working pressure of the magnetron sputtering is 15 Pa
  • the power of the high-power cadmium sulfide target is 1200W
  • the power of the low-power cadmium sulfide target is 300W.
  • This embodiment also provides a method for preparing a buffer layer of a copper indium gallium selenium thin film solar cell chip, including the following steps:
  • the sputtering gas used for the first magnetron sputtering is an inert gas
  • the sputtering source is a cadmium sulfide target
  • the copper indium gallium selenium is deposited on the copper indium gallium selenium thin film solar cell chip by the first magnetron sputtering under the above conditions.
  • Vapor deposition is performed on the absorption layer to obtain a first buffer layer.
  • the first buffer layer is epitaxially grown CdS, and the thickness of the first buffer layer is 20 nm.
  • the temperature of the absorption layer was 600 ° C.
  • the power of the first magnetron sputtering was 500 W
  • the working pressure was 10 Pa.
  • the sputtering gas used for the second magnetron sputtering is an inert gas, the reaction gas is oxygen, and the sputtering source is a cadmium sulfide target.
  • the second magnetron sputtering is continued to perform vapor deposition to obtain a second buffer.
  • the second buffer layer is nanocrystalline CdS doped with oxygen, and the thickness of the second buffer layer is 30 nm.
  • the power of the second magnetron sputtering is 500W
  • the molar ratio of the inert gas to oxygen is 5: 1
  • the working pressure is 10Pa.
  • Steps 1) and 2) are completed to obtain a CdS: O buffer layer, and the buffer layer includes a first buffer layer and a second buffer layer.
  • the inert gas in this embodiment is argon. In step 1), only argon gas was passed.
  • This embodiment provides a buffer layer of a copper indium gallium selenium thin film solar cell chip, which is prepared by the above method.
  • This embodiment also provides a copper indium gallium selenium thin film solar cell chip, which includes: a flexible substrate, a conductive layer, a copper indium gallium selenium thin film absorption layer, a buffer layer, and a window layer of the copper indium gallium selenium thin film solar cell chip.
  • each film layer shown in FIG. 2 is continuously deposited on a stainless steel flexible substrate by a roll-type coating device: a Ti / Mo barrier layer, a Na-doped Mo layer, a Mo layer, a CIGS absorption layer, a buffer layer, i-ZnO layer and AZO layer.
  • i-ZnO is a high-resistance n-type semiconductor
  • AZO is ZnO: Al
  • an i-ZnO layer is used as a window layer
  • a Ti / Mo barrier layer is used as a Ti / Mo barrier layer
  • a Na-doped Mo layer is used as conductive layers.
  • the thickness of the Ti / Mo barrier layer is about 400nm
  • the thickness of the Na-doped Mo layer is about 240nm
  • the thickness of the Mo layer is about 200nm
  • the thickness of the CIGS absorption layer is about 1.5um
  • the thickness of the buffer layer is about 50nm
  • the thickness of the i-ZnO layer is about 80 nm.
  • the copper indium gallium selenium thin film solar cell chip was assembled into a plurality of solar cell modules, and the average photoelectric conversion efficiency of the plurality of solar cell modules was measured to be 16.2%.
  • the average attenuation rate of a plurality of solar cell modules after long-term reliability cold-heat cycles 200 times (TC200) was 0.6%.
  • This embodiment also provides a method for preparing a buffer layer of a copper indium gallium selenium thin film solar cell chip.
  • the difference from the embodiment 7 is that the thickness of the first buffer layer is 15 nm, and the thickness of the second buffer layer is 45 nm.
  • This embodiment also provides a method for preparing a buffer layer of a copper indium gallium selenium thin film solar cell chip.
  • the difference from the embodiment 7 is that the thickness of the first buffer layer is 25 nm, and the thickness of the second buffer layer is 40 nm.
  • This embodiment also provides a method for preparing a buffer layer of a copper indium gallium selenium thin film solar cell chip.
  • the difference from the embodiment 7 is that the thickness of the first buffer layer is 15 nm, and the thickness of the second buffer layer is 60 nm.

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Abstract

L'invention concerne une couche tampon d'une puce de cellule solaire à couche mince de cuivre-indium-gallium-sélénium et son procédé de fabrication, et une puce de cellule solaire à couche mince de cuivre-indium-gallium-sélénium. La couche tampon est une couche tampon de sulfure de cadmium pour dépôt sur une couche d'absorption de cuivre-indium-gallium-sélénium de la puce de cellule solaire à couche mince de cuivre-indium-gallium-sélénium, et la couche tampon de sulfure de cadmium comprend une couche de CdS développée de manière épitaxiale sur la couche d'absorption, et une couche de CdS nanocristalline éloignée de la couche d'absorption.
PCT/CN2019/097469 2018-07-24 2019-07-24 Couche tampon de puce de cellule solaire à couche mince de cuivre-indium-gallium-sélénium et son procédé de fabrication, et puce de cellule solaire à couche mince de cuivre-indium-gallium-sélénium WO2020020217A1 (fr)

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