WO2020017865A1 - Appareil de surveillance d'un composant gazeux d'un laser à gaz - Google Patents

Appareil de surveillance d'un composant gazeux d'un laser à gaz Download PDF

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Publication number
WO2020017865A1
WO2020017865A1 PCT/KR2019/008770 KR2019008770W WO2020017865A1 WO 2020017865 A1 WO2020017865 A1 WO 2020017865A1 KR 2019008770 W KR2019008770 W KR 2019008770W WO 2020017865 A1 WO2020017865 A1 WO 2020017865A1
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WO
WIPO (PCT)
Prior art keywords
gas
chamber
gas laser
monitoring
component
Prior art date
Application number
PCT/KR2019/008770
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English (en)
Korean (ko)
Inventor
차동호
Original Assignee
차동호
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 차동호 filed Critical 차동호
Priority to CN201980048019.4A priority Critical patent/CN112424696A/zh
Publication of WO2020017865A1 publication Critical patent/WO2020017865A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G03F9/7053—Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
    • G03F9/7057—Gas flow, e.g. for focusing, leveling or gap setting

Definitions

  • the present invention relates to a gas component monitoring apparatus for a gas laser, and more particularly, to a gas laser gas component monitoring apparatus capable of monitoring a component of a heterogeneous gas present in a chamber in which a laser is generated.
  • the exposure process uses an exposure apparatus to form a pattern by selectively scanning light on the photosensitive film according to a predetermined pattern. Since the exposure apparatus requires high precision for semiconductor device and display fabrication, a laser is used as a light source.
  • An exposure apparatus using a laser as a light source is provided with a gas laser generation chamber which fills a specific gas inside and applies an electrode to generate a laser by mutual action of the excited gases.
  • the specific gas supplied into the gas laser generation chamber is In order to react with each other, an ideal laser is produced only when each of them is supplied at a constant pressure with an optimum composition ratio.
  • the amount of impurities is increased in the laser generating chamber by the plasma of high energy by the material and the reaction gas inside the chamber.
  • An object of the present invention is to solve the above-mentioned problems, and it is necessary to quickly identify and cope with unnecessary substances when they are introduced or generated in a gas laser generation chamber generating a laser using a mixed gas containing heterogeneous gases. It is to provide a gas component monitoring device of the gas laser to continuously monitor the situation in the gas laser chamber.
  • the gas component monitoring apparatus of a gas laser for achieving the above object provides a reaction space in which a mixed gas containing heterogeneous gas is accommodated so that a gas laser can be generated.
  • a device attached to a gas laser generation chamber, the apparatus being connected to the gas laser generation chamber side to receive the mixed gas from the gas laser generation chamber side, and the mixture accommodated in the reaction space of the gas laser generation chamber side.
  • Monitoring the composition of the gas may be a feature.
  • the gas component monitoring apparatus of the gas laser may be further characterized by acquiring information on the introduction or generation of components of the mixed gas or unnecessary substances contained in the reaction space by using spectroscopic means. have.
  • the gas component monitoring apparatus of the gas laser the inlet pipe coupled to one side is in communication with the gas laser generating chamber; And a monitoring chamber coupled to be in communication with the other side of the inflow pipe and providing an analysis space capable of receiving and receiving the mixed gas through the inflow pipe. It may be another feature to include a.
  • the gas component monitoring apparatus of the gas laser the electrode is mounted to the monitoring chamber, the electrode for receiving a power from the outside to form a plasma on the analysis chamber in the monitoring chamber; It may also be another feature to include a further.
  • the gas component monitoring device of the gas laser is disposed on one side of the monitoring chamber, and the information on the introduction or generation of the components or the unnecessary substances of the mixed gas from the plasma formed on the analysis space in the monitoring chamber.
  • the gas component monitoring device of the gas laser the one end is coupled to communicate with the monitoring chamber, the outlet pipe for guiding the movement of the mixed gas is discharged from the reaction space; It may also be another feature to include a further.
  • the gas laser generating chamber is provided with a discharge pipe through which the mixed gas can be discharged from the reaction space to the outside, and the other end of the outlet pipe is coupled to be in communication with the discharge pipe. You may.
  • the other end of the outlet pipe may be coupled to the gas laser generation chamber so that the monitoring chamber and the gas laser generation chamber can communicate with each other.
  • the gas laser generating chamber is provided with a discharge pipe for discharging the heterogeneous gas from the reaction space to the outside, the outlet pipe is coupled to be in communication with the discharge pipe, the accommodating in the monitoring chamber It may be another feature that a switching valve is provided in the outlet pipe so that a mixed gas can selectively flow out to either of the gas laser generating chamber and the outlet pipe.
  • the monitoring chamber may further include an optical window provided to observe the plasma formed on the analysis chamber in the monitoring chamber.
  • the optical window is chemically durable and is formed of quartz or sapphire material to secure a predetermined range or more of a wavelength range of light that can be transmitted to the spectrometer. You may.
  • the gas component monitoring apparatus of the gas laser according to the present invention can continuously monitor the components of the mixed gas in the gas laser generating chamber. Therefore, when unnecessary substances are introduced into or generated in the gas laser generation chamber, it is possible to quickly identify and respond to them, thereby ensuring stability of the output of the laser beam and maintaining a constant profile of the generated laser beam. It helps to improve the quality of semiconductor and flat panel display.
  • FIG. 1 is a view schematically showing a gas laser generation chamber to make a gas component monitoring apparatus of a gas laser according to an embodiment of the present invention.
  • FIG. 2 is a view schematically showing a configuration to which the gas component monitoring apparatus of a gas laser according to an embodiment of the present invention is applied.
  • FIG. 1 is a view schematically showing a gas laser generation chamber to explain a gas component monitoring apparatus of a gas laser according to an embodiment of the present invention
  • Figure 2 is a gas component monitoring apparatus of a gas laser according to an embodiment of the present invention A diagram schematically showing the applied configuration.
  • the gas component monitoring apparatus of a gas laser may be attached to a gas laser generating chamber, and the whole system 10 may include a gas laser generating chamber and a gas laser. Gas component monitoring apparatus.
  • 'gas component monitoring of the gas laser' means that the expression means component monitoring of a mixed gas including heterogeneous gases existing in the chamber generating the gas laser.
  • the gas laser generation chamber 100 provides a reaction space in which a mixed gas containing heterogeneous gases is accommodated so that the gas laser can be generated.
  • a plurality of gas supply pipes 110 are provided to supply heterogeneous gases from the outside into the reaction space, and each gas is moved along the gas supply pipe 110 to provide a gas laser generating chamber ( 100) is supplied to the reaction space, and mixed on the reaction space.
  • the gas laser generating chamber 100 and the discharge pipe 120 are connected to each other, and the mixed gas in the gas laser generating chamber 100 is discharged to the outside through the discharge pipe 120. Therefore, the pressure caused by the mixed gas in the reaction space in the gas laser generation chamber 100 may be maintained at a constant level.
  • Ne, Xe, Hcl, or the like may be used, and the pressure in the reaction space is preferably maintained within a range between 1 atm and 6 atm.
  • the gas laser generation chamber 100 is provided with a metal electrode for generating a laser using power supplied through a power supply, and in the gas laser generation chamber 100.
  • a gas circulation fan is provided to uniformly mix and distribute heterogeneous gases in the reaction space.
  • the mixed gas When the mixed gas is accommodated in the gas laser generating chamber 100 and power is supplied to the metal electrode, a laser is generated and radiated to the front of the gas laser generating chamber 100.
  • the components of the mixed gas including heterogeneous gases may be monitored through the component monitoring apparatus so as to stably generate the laser generated in the gas laser generation chamber 100, thereby identifying whether the unnecessary substances are introduced or generated. .
  • the component monitoring device is connected to the gas laser generating chamber 100 so as to receive the mixed gas from the gas laser generating chamber 100 and monitors the components of the heterogeneous gas contained in the reaction space of the gas laser generating chamber 100.
  • the component monitoring device may be able to obtain information on the components of the heterogeneous gas contained in the reaction space in the gas laser generation chamber 100 or information on the introduction or generation of unnecessary substances by using spectroscopic means. .
  • the component monitoring device preferably includes an inlet tube 210, a monitoring chamber 200, and an electrode 230, and further preferably includes a spectrometer 250 and an outlet tube 220.
  • Inlet pipe 210 is coupled so that one side can be in communication with the gas laser generation chamber (100). And the other side is coupled to the monitoring chamber 200. Therefore, the mixed gas in the reaction space in the gas laser generating chamber 100 flows into the monitoring chamber 200 through the inlet pipe 210.
  • the monitoring chamber 200 is coupled to be in communication with the other side of the inlet pipe 210.
  • the inlet pipe 210 may be one or multiple.
  • the inlet pipe 210 is also preferably attached to the gas regulator 310, such as an orifice or mass flow controller (MFC) to adjust the amount of gas flowing in.
  • MFC mass flow controller
  • an analysis space for receiving and receiving heterogeneous gases from the gas laser generation chamber 100 through the inlet pipe 210 is provided in the monitoring chamber 200.
  • Electrode 230 is preferably mounted to the monitoring chamber 200. When power is supplied from the outside to the electrode 230, plasma is formed in the analysis chamber in the monitoring chamber 200 into which the mixed gas is introduced.
  • the optical chamber 240 is preferably provided in the monitoring chamber 200 so that the spectrometer 250 can observe the plasma formed in the analysis chamber in the monitoring chamber 200.
  • the optical window 240 has physical and chemical durability, and is formed of quartz or sapphire material to secure or provide a certain level or more of a wavelength range of light that can be transmitted to the spectrometer 250. It is preferable.
  • the spectrometer 250 is disposed on one side of the monitoring chamber 200. That is, the light emitted through the optical window 240 of the monitoring chamber 200 is disposed to be irradiated.
  • an optical fiber is disposed between the optical window 240 and the spectrometer 250 to transmit light through the optical fiber.
  • Light emitted from the plasma formed in the analysis chamber in the monitoring chamber 200 passes through the optical window 240 and is incident to the spectrometer 250.
  • the spectrometer 250 obtains information on the components of the mixed gas in the monitoring chamber 200 through the light incident on the spectrometer 250.
  • Outflow pipe 220 is provided so that the mixed gas is moved from the monitoring chamber 200.
  • One end of the outlet pipe 220 is coupled to be in communication with the monitoring chamber 200.
  • the pump 320 is provided in the outlet pipe 220 so that the mixed gas is moved out of the monitoring chamber 200.
  • the other end of the outlet pipe 220 is coupled to the gas laser generation chamber 100, and the mixed gas that is moved from the monitoring chamber 200 may return to the gas laser generation chamber 100.
  • the outlet pipe 220 may be connected to the discharge pipe 120 connected to the gas laser generation chamber 100.
  • the mixed gas from the monitoring chamber 200 may be moved to the discharge pipe 120 and discharged to the outside along the discharge pipe 120.
  • the discharge valve 160 is provided in the discharge pipe 120.
  • the switching valve 260 may be provided in the outlet pipe 220 as referred to in the drawing. By the switching of the switching valve 260, the mixed gas traveling along the outlet pipe 220 may be returned to the gas laser generation chamber 100 or may be introduced into the discharge pipe 120 to be discharged to the outside along the discharge pipe 120. It is desirable to be able.
  • the mixed gas flows into the monitoring chamber 200 through the inflow pipe 210, and the mixed gas flows out of the monitoring chamber 200 through the outflow pipe 220, so that the pressure of the mixed gas in the monitoring chamber 200 is reduced. You can also keep it at a certain level.
  • the gas component monitoring apparatus of the gas laser receives the mixed gas from the gas laser generation chamber and spectroscopically grasps the component or the component ratio through the plasma to detect the component or component of the mixed gas in the gas laser generation chamber. It is possible to continuously monitor the introduction or occurrence of unnecessary substances.
  • the stability of the output of the generated laser beam is secured, and helps to keep the profile of the generated laser beam constant.
  • Such a gas component monitoring device of a gas laser may be widely applied to an excimer laser used in an annealing device as well as pattern exposure.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

La présente invention concerne un appareil de surveillance d'un laser à gaz. La présente invention est reliée à une chambre de génération de laser à gaz de façon à pouvoir recevoir deux types de gaz provenant de la chambre de génération de laser à gaz, et surveille des composants des deux types de gaz reçus dans un espace de réaction d'une chambre d'émission de laser à gaz, ce qui permet d'identifier rapidement l'insertion ou la génération de substances inutiles dans la chambre de génération de laser à gaz et de prendre des mesures en réaction à celles-ci. Par conséquent, l'invention concerne une technologie pouvant assurer la stabilité d'une sortie de faisceau laser.
PCT/KR2019/008770 2018-07-17 2019-07-16 Appareil de surveillance d'un composant gazeux d'un laser à gaz WO2020017865A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201980048019.4A CN112424696A (zh) 2018-07-17 2019-07-16 气体激光的气体成分监控装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020180083030A KR102054372B1 (ko) 2018-07-17 2018-07-17 가스레이저의 가스성분 모니터링 장치
KR10-2018-0083030 2018-07-17

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WO2020017865A1 true WO2020017865A1 (fr) 2020-01-23

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PCT/KR2019/008770 WO2020017865A1 (fr) 2018-07-17 2019-07-16 Appareil de surveillance d'un composant gazeux d'un laser à gaz

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WO (1) WO2020017865A1 (fr)

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KR20220167049A (ko) * 2021-06-11 2022-12-20 삼성전자주식회사 플라즈마 생성부를 포함하는 전자 장치

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JP2001352115A (ja) * 2000-06-07 2001-12-21 Sumitomo Heavy Ind Ltd レーザガス成分分析機能を有する放電励起ガスレーザ装置及びその安定化運転方法
KR20100095369A (ko) * 2009-02-20 2010-08-30 시마쯔 코퍼레이션 반도체 제조 프로세스용 흡광 분석장치
KR101663032B1 (ko) * 2010-09-10 2016-10-06 삼성전자주식회사 공정 모니터링 장치와 이를 구비한 반도체 공정 설비, 그리고 이를 이용한 공정 모니터링 방법
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CN112424696A (zh) 2021-02-26
KR102054372B1 (ko) 2019-12-10

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