WO2012118280A2 - Appareil de production de rayonnement ultraviolet extrême stabilisé utilisant le plasma - Google Patents

Appareil de production de rayonnement ultraviolet extrême stabilisé utilisant le plasma Download PDF

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Publication number
WO2012118280A2
WO2012118280A2 PCT/KR2012/000734 KR2012000734W WO2012118280A2 WO 2012118280 A2 WO2012118280 A2 WO 2012118280A2 KR 2012000734 W KR2012000734 W KR 2012000734W WO 2012118280 A2 WO2012118280 A2 WO 2012118280A2
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WIPO (PCT)
Prior art keywords
vacuum chamber
gas
plasma
extreme ultraviolet
vacuum
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PCT/KR2012/000734
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English (en)
Korean (ko)
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WO2012118280A3 (fr
Inventor
장명식
임재원
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주식회사 에프에스티
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Publication of WO2012118280A2 publication Critical patent/WO2012118280A2/fr
Publication of WO2012118280A3 publication Critical patent/WO2012118280A3/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state

Definitions

  • the present invention relates to a stabilized extreme ultraviolet light generating apparatus using plasma, and more particularly, to a stabilized pole using plasma capable of generating effective and highly efficient Extreme Ultraviolet (EUV) light while simplifying a structure.
  • An ultraviolet generator capable of generating effective and highly efficient Extreme Ultraviolet (EUV) light while simplifying a structure.
  • the resolution of the exposure apparatus is proportional to the numerical aperture (NA) of the transfer optical system and inversely proportional to the wavelength of light used for exposure. For this reason, as an attempt to increase the resolution, an attempt has been made to use an Extreme Ultraviolet (EUV) light source having a short wavelength instead of visible or ultraviolet light for exposure transfer.
  • EUV Extreme Ultraviolet
  • As the EUV light generating device used in such an exposure transfer device there are a laser plasma EUV light source and a discharge plasma EUV light source.
  • the wavelength used in the EUV exposure apparatus is an EUV light source having a wavelength of 13.5 nm, and the use of Ne plasma using Ne gas as a target material of a laser plasma light source has been widely researched and developed because of relatively high conversion efficiency (obtained with respect to input energy). EUV light intensity ratio). Since Ne is a gaseous material at room temperature, the problem of debris is difficult. However, in order to obtain a high output EUV light source, there is a limit to using Ne gas as a target, and it is also desired to use other materials.
  • EUV light which is 13.5 nm generated from the plasma
  • EUV light which is 13.5 nm generated from the plasma
  • a vacuum environment ⁇ 10 -3 torr
  • a condenser mirror and a lens coated with a special material should be used.
  • the present invention for solving the above problems can be minimized by the vacuum induction and gas efficiency during the extreme ultraviolet ray generation by applying different vacuum degree of the plasma generation section and output section, and effectively reduce the EUV light source generated from the plasma It is an object of the present invention to provide a stabilized extreme ultraviolet generator using a plasma that can be collected.
  • the present invention for achieving the above object is a laser source for outputting a laser, the laser is supplied from the gas supply passage for the plasma induction furnace corresponding to the section in which the laser output from the laser source is in focus And a gas cell for generating extreme ultraviolet rays by forming a plasma by means of a gas and the gas cell, the first vacuum chamber part maintaining a constant vacuum degree, and receiving the extreme ultraviolet rays generated from the gas cells to receive the extreme ultraviolet rays.
  • a second vacuum chamber part for maintaining a constant vacuum degree as a space for exiting to the outside, a gas supply part for supplying gas for guiding the laser and plasma into a gas supply path of the gas cell, and the first vacuum chamber part and a second vacuum chamber part; It comprises a first vacuum pump and a second vacuum pump for forming the vacuum degree of the vacuum chamber portion, respectively.
  • the second vacuum chamber portion may have a higher vacuum degree than the first vacuum chamber portion.
  • the first vacuum chamber part and the second vacuum chamber part may include a partition wall through which extreme ultraviolet rays are transmitted in one vacuum chamber, and the first vacuum chamber part and the second vacuum chamber part may be divided into a first vacuum chamber part and a second vacuum chamber part.
  • the apparatus may further include a driver including at least one focusing mirror and a reflecting mirror before the light emitted from the laser source is incident on the gas cell, and controlling a position and an angle of the focusing mirror and the reflecting mirror. It is done.
  • a driver including at least one focusing mirror and a reflecting mirror before the light emitted from the laser source is incident on the gas cell, and controlling a position and an angle of the focusing mirror and the reflecting mirror. It is done.
  • the second vacuum chamber unit a dichroic mirror for reflecting only the extreme ultraviolet light incident from the first vacuum chamber to the outside, a beam splitter for dividing the remaining light transmitted through the dichroic mirror, the light split through the beam splitter
  • An image sensor that detects focusing of a laser beam incident on the gas cell by receiving one of the light beams, and focusing provided at the tip of the image sensor or the image sensor to detect whether the laser beam is focused on each gas cell position
  • a light detector configured to detect a state of a laser beam by receiving the driving unit for driving the lens back and forth and the other light split by the beam splitter.
  • an ND filter or an analyzer may be further provided at the front end of the image sensor and the photo detector.
  • the first vacuum chamber unit may include a window for receiving a laser beam output from the laser source, and the window may be installed at a Brewster angle.
  • the gas cell is characterized in that formed of a transparent material.
  • the gas cell is characterized in that formed of quartz.
  • the gas cell may further include a gas cell pump and a gas drain part for maintaining the vacuum degree of the plasma induction furnace and draining the gas supplied through the gas supply path through the exhaust path.
  • the present invention constructed and operated as described above has an advantage of increasing plasma efficiency generated by using Ne gas for inducing plasma and effectively collecting optimal EUV light generated from plasma.
  • the chamber portion having a different degree of vacuum there is an advantage that can stably output the extreme ultraviolet rays generated in the gas cell.
  • the extreme ultraviolet ray generating apparatus using the plasma according to the present invention has the effect of having a small size and relatively high luminance than other EUV light sources.
  • the system automation of the extreme ultraviolet generator is realized, which improves precision, high-speed alignment, and safely controls the device. have.
  • FIG. 1 is a schematic configuration diagram of a stabilized EUV apparatus using a plasma according to the present invention
  • FIG. 2 is a schematic configuration diagram of a gas cell for plasma induction of a stabilized extreme ultraviolet light generating apparatus using plasma according to the present invention
  • FIG. 3 is a configuration diagram of an extreme ultraviolet generator for automatic laser alignment according to another embodiment of the present invention.
  • FIG. 4 shows an image sensor image for laser automatic alignment according to the embodiment of FIG. 3.
  • the stabilized extreme ultraviolet ray generating apparatus using the plasma according to the present invention the laser source 100 for outputting the laser, the laser output from the laser source in the plasma induction furnace 330 corresponding to the section in which the focus is received
  • Gas chamber 300 receiving gas from the gas supply path 310 to form a plasma by laser and gas to generate extreme ultraviolet rays, and accommodating the gas cell to maintain a constant vacuum degree.
  • a second vacuum chamber unit 201 which maintains a constant vacuum degree as a space for receiving the extreme ultraviolet rays generated from the gas cell and emitting the extreme ultraviolet rays to the outside, and the laser is supplied to the gas supply path of the gas cell.
  • a gas supply unit for supplying gas for inducing plasma and a first vacuum pump for forming vacuum degrees of the first vacuum chamber part and the second vacuum chamber part, respectively. And a second vacuum pump.
  • the stabilized extreme ultraviolet light generating apparatus has a light efficiency according to the degree of vacuum in the process in which EUV light is generated in the gas cell (first vacuum chamber part) and then EUV light is output outside the vacuum chamber using gas plasma.
  • EUV stabilized by dividing the first vacuum chamber part 200 and the second vacuum chamber part 201 having different vacuum degrees, and performing EUV light generation and EUV light transmission functions in each chamber part to prevent degradation. It is a main technical point to provide an extreme ultraviolet generator capable of generating light.
  • FIG. 1 is a schematic configuration diagram of a stabilized EUV apparatus using a plasma according to the present invention.
  • the laser source 100, the first vacuum chamber part 200, the gas cell 300, the second vacuum chamber part 201, the gas supply part 500, and the plurality of vacuum pumps 600 are large. 610, it is composed of a plurality of optical components for delivering a laser beam.
  • the laser source 100 is a source source for outputting a laser having an arbitrary wavelength.
  • the laser source 100 generates extreme ultraviolet rays having a wavelength of 50 nm or less through plasma induction of the laser output from the laser source.
  • a femto sencond-class laser source as a detailed specification as a medium titanium sapphire amplification laser system, Wavelength 800nm, Repetition rate 1kHz, Pulse duration ⁇ 50fs, Energy per pulse> 3.5mJ at 1 kHz
  • Laser sources with energy stability ⁇ 0.5% and M 2 ⁇ 1.3 can be used.
  • the first vacuum chamber part 200 is an area in which extreme ultraviolet rays are generated
  • the second vacuum chamber part 201 corresponds to an area for stably supplying extreme ultraviolet rays generated in the first vacuum chamber part.
  • the plasma is induced by the laser beam and the gas supplied from the outside to generate the extreme ultraviolet rays, the extreme ultraviolet rays are generated through the gas cell to be described later.
  • a gas such as Ne, Xe, He, etc. is supplied into the gas cell from the outside, it is difficult to maintain a constant vacuum degree, and thus, in the chamber where the gas cell is located, EUV light efficiency generated in the gas cell may be reduced. Therefore, the gas cell is located in the first vacuum chamber portion which maintains a constant vacuum degree, and EUV light generated in the gas cell is transferred directly to the second vacuum chamber portion having a lower vacuum degree to prevent the efficiency from falling.
  • first vacuum chamber portion and the second vacuum chamber portion may be configured separately and have a structure to be delivered through the window, it is configured to maintain a different vacuum degree through a partition wall in a preferred embodiment of the present invention
  • EUV light is transmitted through windows or microholes installed in the bulkhead.
  • the first vacuum chamber part and the second vacuum chamber part are configured with a first vacuum pump 600 and a second vacuum pump 610, respectively, to maintain different vacuum degrees, and to form a lower vacuum degree in the second vacuum chamber.
  • a plurality of vacuum pumps suitable for this can be installed.
  • it consists of Medium Vacuum class vacuum pumps such as Cryo pump, Diffusion Pump, Turbo Pump and Ion pump.
  • Vacuum chambers each portion is preferably first the 10 -3 torr or less, a second vacuum chamber maintained in a vacuum chamber to a vacuum degree of less than 10 -6 torr.
  • FIG. 2 is a schematic configuration diagram of a gas cell for plasma induction of the extreme ultraviolet ray generating apparatus using the plasma according to the present invention.
  • the gas cell is made of a transparent material, preferably made of quartz, a through path through which a laser can pass is formed, and in the center thereof, a plasma induction furnace 330 which is a focal region where a laser output from a laser source is focused. ), An exhaust path 320 is formed at both sides of the plasma induction furnace, and a gas supply path 310 for supplying gas to the plasma induction furnace is connected to the plasma induction furnace.
  • the plasma induction furnace corresponding to the center portion of the gas cell is focused by the laser output from the laser source, and the Ne gas is supplied through the gas induction furnace 310 passing through the plasma induction furnace from the external gas supply unit 500. Supply.
  • exhaust paths 320 are formed at both sides of the plasma induction furnace to exhaust the supplied gas to the outside and maintain the degree of vacuum in the plasma induction furnace. If the gas supplied through the gas supply path is diffused outside the region where the laser focus is focused, smooth plasma induction may not be possible due to the scattering of gas particles.
  • this exhaust gas may also be an obstacle to EUV light generation. Maintain gas evacuation and vacuum through the furnace.
  • the exhaust path is exhausted through an external vacuum pump and exhausted through a gas drain 610 connected to the pump.
  • the material of the gas cell is made of glass such as quartz, and it can be observed from the outside whether the plasma is generated normally by the reaction of the input laser light and the injection gas.
  • the integrated gas cell is not only easy to replace, but also very advantageous for alignment after replacement, easy to drain the gas, and very effective in maintaining the vacuum of the vacuum chamber by reducing the amount of gas leaking from the gas cell into the vacuum chamber. .
  • the diameter (A) of the plasma flow path which is a plasma generation region closely related to the size of the point light source considering the inflow pressure of Ne gas and the laser power density, is 0.3 to 0.6 mm and the length ( B) consists of 5 to 10mm.
  • the laser spot light source is first introduced into the gas cell, and the last emitted tube diameter (C) is manufactured with a diameter of 1 to 3 mm to avoid the interference caused by the size of the focused laser point light source and to minimize the inflow of Ne gas into the vacuum chamber. do.
  • Ne gas required for the reaction (D) is composed of 0.5 ⁇ 2mm, the supply pressure is limited to 30 ⁇ 100 torr, which is effective considering the power density of the laser point light source and the space region of the B section, the plasma generation region It is for plasma generation.
  • the diameter (E) is 5 to 10 mm larger than the diameter of the point C where the laser is introduced to facilitate the vacuum pumping. At this time, to make gas pumping more easily, give 30 to 60 degrees of inclination angle based on the entrance and exit direction.
  • Ultraviolet (EUV) light generated by plasma induction is generated through the gas cell configured as described above.
  • the gas cell 300 is positioned in the first vacuum chamber, and the laser output from an external laser source is incident to the gas cell to generate EUV light.
  • a window 210 for transmitting a laser is provided at one side of the vacuum chamber.
  • the window is positioned at Brewster's angle. Therefore, the reflection loss is minimized to minimize the femtosecond laser beam reflection loss.
  • the laser beam transmitted through the window is focused and transmitted through a plurality of mirrors to be focused on the plasma induction path of the gas cell.
  • a focusing mirror 420 is provided between the first reflecting mirror 400 and the second reflecting mirror 410 so as to effectively implement focusing and mechanical size (chamber size). It installs and delivers the beam to the gas cell.
  • the first beam reflected and reflected by the first reflecting mirror is focused through the focusing mirror 420 and reflected by the second reflecting mirror. Light reflected back from the second reflection mirror is incident to the gas cell.
  • the configuration for light transmission can be easily changed, and if necessary, can be incident directly into the gas cell from the laser source.
  • the gas cell is configured to be located close to the partition wall, the extreme ultraviolet rays generated in the gas cell is transmitted to the second vacuum chamber portion is emitted to the outside in a more stable state by a low degree of vacuum.
  • the second vacuum chamber part is provided with a dichroic mirror (dichroic mirror; 430), and by adjusting the angle of the mirror, EUV light of wavelengths such as 13 nm and 6 nm of a desired size can be output.
  • a dichroic mirror driver 431 (picomotor) capable of controlling the angle of the dichroic mirror.
  • the present invention can provide an automated device for laser monitoring and automatic alignment implementation of the extreme ultraviolet generating device configured as described above.
  • 3 is a diagram illustrating a configuration of an extreme ultraviolet generator for automatic laser alignment according to another embodiment of the present invention
  • FIG. 4 is a view illustrating an image sensor image for automatic laser alignment according to the embodiment of FIG. 3.
  • an image sensor 450 installed outside the second vacuum chamber with respect to the beam axis emitted from the gas cell and an image sensor driver 452 for driving the image sensor in the beam axis direction are provided.
  • the light detector 470 for detecting the state information such as optical power or output by reflecting the beam incident to the image sensor is provided, and the first and second reflecting mirrors, focusing mirror, dichroic mirror Each drive unit for controlling the angle is provided.
  • the driver 421 is mounted on the first reflecting mirror, the second reflecting mirror, and the focusing lens so that the light emitted from the laser source can be accurately focused in the plasma induction path of the gas cell, thereby implementing angle adjustment or position adjustment.
  • a preferred example of the driving unit is a pico motor (Pico motor) is applied.
  • the image sensor 450 located on the gas cell beam axis is installed for beam alignment and beam monitoring. As shown in FIG. 4, beam spots for the first and second points of the gas cell can be detected.
  • the image sensor is obtained by moving the image sensor in the optical axis direction by the separate image sensor driver 452, and the resultant value is fed back to the driver 421 to automatically control the beam alignment.
  • the beam incident on the image sensor reflects extreme ultraviolet light through the dichroic mirror and enters the remaining transmitted light.
  • the focusing lens is installed at the tip of the image sensor to move the focusing lens to change the beam spot, thereby detecting whether the gas cell is focused.
  • a beam splitter such as a beam splitter 440, is installed in the middle of the beam axis incident to the image sensor and then reflects a part of the light incident to the image sensor to perform beam power monitoring, beam output check, beam status check, beam uniformity, and the like.
  • a photo detector such as a photo detector is installed outside the second vacuum chamber to detect an operating state of the extreme ultraviolet generator in real time.
  • an ND filter or an analyzer 460 may be installed at the tip of the image sensor and the light detector to control an incident beam.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

La présente invention se rapporte à un appareil destiné à produire un rayonnement ultraviolet extrême stabilisé à l'aide de plasma, qui comprend : une source laser qui sort un faisceau laser ; une cellule de gaz qui reçoit le faisceau laser sorti de la source laser, reçoit du gaz apporté depuis un chemin d'alimentation en gaz, et produit un rayonnement ultraviolet extrême par formation de plasma par le faisceau laser et le gaz par rapport à un chemin d'entraînement de plasma correspondant à une section au niveau de laquelle est formé un foyer ; une première unité de chambre de vide qui loge la cellule de gaz et maintient un vide constant ; une seconde unité de chambre de vide qui possède un espace pour recevoir le rayonnement ultraviolet extrême produit par la cellule de gaz et pour émettre le rayonnement ultraviolet extrême vers l'extérieur, et maintient un vide constant ; une unité d'alimentation en gaz qui alimente en gaz le chemin d'alimentation en gaz de la cellule de gaz pour entraîner le faisceau laser et le plasma ; et une première pompe à vide et une seconde pompe à vide pour former les vides de la première unité de chambre de vide et de la seconde unité de chambre de vide, respectivement.
PCT/KR2012/000734 2011-02-28 2012-01-31 Appareil de production de rayonnement ultraviolet extrême stabilisé utilisant le plasma WO2012118280A2 (fr)

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KR10-2011-0017579 2011-02-28
KR1020110017579A KR101172622B1 (ko) 2011-02-28 2011-02-28 플라즈마를 이용한 안정화된 극자외선 발생장치

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110113855A (zh) * 2018-02-01 2019-08-09 三星电子株式会社 Euv产生装置

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KR101849978B1 (ko) * 2012-12-18 2018-04-19 삼성전자 주식회사 극자외선 광 발생 장치 및 방법
US9544984B2 (en) * 2013-07-22 2017-01-10 Kla-Tencor Corporation System and method for generation of extreme ultraviolet light
KR101736055B1 (ko) * 2015-07-24 2017-05-29 한국기초과학지원연구원 초고분해능 현미경 광원용 파장가변 uv 레이저 발진 장치 및 그 방법
KR102244638B1 (ko) 2019-04-18 2021-04-26 주식회사 에프에스티 오염방지 성능이 향상된 고차조화파를 이용한 극자외선 발생장치
KR102243189B1 (ko) * 2020-10-12 2021-04-21 김윤호 진공 빔 프로파일링 장치
KR102673150B1 (ko) 2022-02-16 2024-06-10 주식회사 에프에스티 고차조화파를 이용한 극자외선 발생장치의 써멀 데미지 저감장치
KR102673037B1 (ko) 2022-05-10 2024-06-07 주식회사 이솔 Ｅｕｖ 광원 생성장치
KR102664830B1 (ko) 2022-05-12 2024-05-10 주식회사 이솔 고밀도 플라즈마 생성을 위한 euv 광원 장치 및 플라즈마 가스 리싸이클링 시스템 그리고 euv 마스크 검사장치
KR20230171246A (ko) 2022-06-13 2023-12-20 주식회사 이솔 Ｅｕｖ 광원 생성장치

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110113855A (zh) * 2018-02-01 2019-08-09 三星电子株式会社 Euv产生装置
CN110113855B (zh) * 2018-02-01 2024-04-09 三星电子株式会社 Euv产生装置

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