Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D1/00—Processes for applying liquids or other fluent materials
  • B05D1/60—Deposition of organic layers from vapour phase
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
  • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
  • C03C17/38—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal at least one coating being a coating of an organic material
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/40—Oxides
  • C23C16/405—Oxides of refractory metals or yttrium
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
  • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
  • C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
  • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
  • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
  • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
  • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
  • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
  • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
  • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
  • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
  • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
  • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
  • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
  • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
  • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
  • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
  • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
  • C23C28/3455—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
  • C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
  • C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
  • C23C28/42—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by the composition of the alternating layers
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
  • C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
  • C23C28/44—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by a measurable physical property of the alternating layer or system, e.g. thickness, density, hardness
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
  • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
  • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/80—Constructional details
  • H10K30/81—Electrodes
  • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2217/00—Coatings on glass
  • C03C2217/90—Other aspects of coatings
  • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/50—Photovoltaic [PV] devices
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/549—Organic PV cells
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/31504—Composite [nonstructural laminate]
  • Y10T428/31678—Of metal

Definitions

• the present invention is in the field of transparent conductive films, in particular organic-inor- ganic hybrid transparent conductive films.
• Transparent conductive films are widely used as electrodes in opto-electronic devices, such as solar cells or light-emitting diodes.
• ITO indium-tin oxide
• con-ductive films typically, indium-tin oxide (ITO) is used as material in con- ductive films.
• ITO films are brittle and thus have limited applicability for flexible de- vices.
• Superlattice structures offer an alternative.
• US 5 523 585 discloses a superlattice structure formed by periodically repeating, in the direction of electron movement, a first and a second semiconductor material region.
• the con- ductivity and the flexibility is limited.
• US 2011 / 0 212 336 A1 discloses an electroconductive laminate with high electrical conductiv- ity. However, this laminate is brittle and thus sensitive towards bending.
• JP 2016 / 012 555 A disclose transparent conductive films which are said to be flexible. How- ever, the metal oxides used are brittle, so bending around small radii is not possible without cracks.
• US 2017 / 0 121 812 A1 discloses an organic-inorganic superlattice for moisture and oxygen barrier applications. However, it is not indicated how transparent conductive films are obtained from this approach.
• the present invention further relates to a process for preparing a transparent conductive film comprising depositing on a substrate
• the present invention further relates to the use of the film according to the present invention as electrode in an opto-electronic device.
• the film according to the present invention is transparent.
• Transparent in the present context means that the conductive metal oxide film transmits at least 50 % of the intensity of light at a wavelength of 550 nm shined on the film parallel to the surface normal, more preferably at least 70 %, in particular at least 80 %.
• the film according to the present invention is conductive, which means that the film is electri- cally conductive.
• the film has a sheet resistance of 1 000 W/sq or less, more prefera- bly 500 W/sq or less, even more preferably 200 W/sq or less, in particular 100 W/sq or less.
• the film has a resistivity of 0.01 W-cm or less, more preferably 3 IO- 3 W-cm or less, even more preferably I O- 3 W-cm or less, in particular 3 10 4 W-cm or less. Both the sheet resistance and the resistivity are usually measured at a temperature of 20 °C.
• the sheet re- sistance and the resistivity of the films are measured using the four-point-probe technique.
• the film according to the present invention comprises a first laminate comprising layers contain- ing T1O2, Zr0 2 or Hf0 2 , preferably T1O2.
• these layers contain at least 50 wt.-% T1O2, Zr0 2 or Hf0 2 , more preferably at least 70 wt.-% T1O2, Zr0 2 or Hf0 2 , in particular at least 90 wt.- % T1O2, Zr0 2 or Hf0 2 .
• the layer containing T1O2, Zr0 2 or Hf0 2 can be amorphous, partially crys- talline or crystalline, preferably it is crystalline.
• the at least two layers containing T1O2, Zr0 2 or Hf02 can have the same thickness or different thicknesses, preferably they have the same thickness.
• the layer containing T1O2, Zr0 2 or Hf0 2 preferably has a thickness of 0.1 to 100 nm, more preferably 1 to 10 nm, in particular 2 to 5 nm.
• the layer containing T1O2, Zr0 2 or Hf02 has a uniform thickness, which means that the thickness at the thickest position of the layer is less than double of the thickness at the thinnest position, more preferably less than 1.5 the thickness at the thinnest position.
• the film according to the present invention comprises at least two layers containing T1O2, Zr0 2 or HI ⁇ 2, preferably at least three, more preferably at least five, in particular at least ten.
• the first laminate further comprises a layer containing an organic compound.
• the film corn- prises more than two layers containing T1O2, Zr0 2 or Hf0 2
• the film preferably comprises alter- natingly a layer containing T1O2, Zr0 2 or Hf0 2 and a layer containing an organic compound, such that each layer containing an organic molecule is in between two layers containing T1O2, Zr0 2 or Hf0 2 , wherein other layers may be in between these layers.
• the layer containing an or- ganic compound is preferably thinner than the layer containing T1O2, Zr0 2 or Hf0 2 . If more than one layer containing an organic compound is present, they can have the same thickness or a different one, preferably they have the same thickness.
• the layer containing an organic corn- pound preferably has a thickness of 0.05 to 5 nm, more preferably 0.1 to 1 nm.
• the layer con- taining an organic compound can be a monolayer, i.e. having a thickness on the order of one molecule, or a sub-monolayer.
• the layer containing an organic compound preferably contains more than 98 wt.-% of nonmet- als, preferably more than 99 wt.-%, in particular completely or essentially completely. It is even more preferable that the nonmetals are C, H, O, N, S, Se and/or P.
• the layer containing an or- ganic compound can contain one organic compound or more than one organic compounds, for example two or three.
• the layer containing an organic compound preferably contains a sulfur- containing compound.
• the sulfur in the sulfur-containing compound is preferably in the oxida- tion state -2, -1 or 0, which is minus two, minus one or zero, e.g. an organic thiol, an organic thi- oether, or an organic dithioether.
• the sulfur-containing compound can contain one or more than one sulfur atoms.
• the sulfur-containing compound contains one sulfur atom.
• the sulfur-containing compound is an aromatic thiol.
• the thiol can be directly bond to the aromatic part of the molecule or via a linker such as a methylene group, preferably it is directly bond to the aromatic group.
• the sulfur-containing corn- pound is even more preferably a thiophenol derivative.
• the sulfur-containing mole- cule further contains one or more hydroxyl groups.
• the sulfur-containing compound contains at least two sulfur atoms, more preferably two sulfur atoms.
• the sulfur atoms in the sulfur-containing compound are independent of each other parts of function groups as described above.
• Thiols are preferred, dithiols are more pre- ferred.
• two thiol groups are attached to an aromatic system, such as benzene, either directly or via a linker such as a methylene group.
• the organic compound in the layer containing an organic compound contains hydroxy, thiol or other groups which can be deprotonated, it is possible that the group remains protonated or that it is deprotonated and coordinates to a metal, or that some are protonated and some are depro- tonated and coordinate to a metal.
• the first laminate has a high relative permittivity.
• the relative permittivity at room temperature and 1 MHz is at least 10, more preferably at least 20, in particular at least 50.
• the thickness of the first laminate is preferably 2 to 60 nm, more preferably 5 to 40 nm, in particular 10 to 30 nm.
• the film according to the present invention further comprises a metal layer.
• the metal layer can contain Li, Be, Na, Mg, Al, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Rb, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In Sn, Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os Ir, Pt, Au, Hg, TI, Bi.
• the metal layer contains Al, Cu, Ag, Au, in particular Ag.
• the film can contain one metal or more than one, for example two or three.
• the metal layer has metallic conductivity, preferably at least 10 5 S/m, more preferably at least 10 6 S/m, in particular at least 10 7 S/m. It is possible that there are other layers in between the metal layer and the first laminate. Preferably, however, the metal layer is in contact with the first lami- nate.
• the metal layer is sufficiently thin to allow transmission of visible light, preferably the metal layer has a thickness of 1 to 100 nm, more preferably 2 to 50 nm, even more preferably 3 to 30 nm, in particular 5 to 20 nm, for example 8 to 15 nm, such as 10 nm.
• the film according to the present invention comprises a second laminate containing at least two layers containing ZnO, i.e. zinc oxide.
• these layers contain at least 50 wt.-% ZnO, more preferably at least 70 wt.-% ZnO, in particular at least 90 wt.-% ZnO.
• the layer containing ZnO can be amorphous, partially crystalline or crystalline, preferably it is crystalline.
• the at least two layers containing ZnO can have the same thickness or different thicknesses, preferably they have the same thickness.
• the layer containing ZnO preferably has a thickness of 0.1 to 100 nm, more preferably 1 to 10 nm, in particular 2 to 5 nm.
• the layer containing ZnO has a uniform thickness, which means that the thickness at the thickest position of the layer is less than double of the thickness at the thinnest position, more preferably less than 1.5 the thickness at the thinnest position.
• the film according to the present invention comprises at least two lay- ers containing ZnO, preferably at least three, more preferably at least five, in particular at least ten.
• the second laminate further comprises a layer containing an organic compound.
• the film preferably comprises alternatingly a layer containing ZnO and a layer containing an organic compound, such that each layer containing an organic molecule is in between two layers containing ZnO, wherein other layers may be in be- tween these layers.
• the layer containing an organic compound is preferably thinner than the layer containing ZnO. If more than one layer containing an organic compound is present, they can have the same thickness or a different one, preferably they have the same thickness.
• the layer containing an organic compound preferably has a thickness of 0.05 to 5 nm, more prefera- bly 0.1 to 1 nm.
• the layer containing an organic compound can be a monolayer, i.e. having a thickness on the order of one molecule, or a sub-monolayer.
• the same definitions and preferred embodiments for the organic compound in the first laminate apply to the second laminate.
• the organic compound in the first laminate can be the same or- ganic compound as in the second laminate or it can be different, preferably it is the same.
• the second laminate further comprises a metallic dopant other than zinc.
• the metallic dopant can be Li, Be, Na, Mg, Al, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Rb, Sr, Y, Zr, Nb, Mo,
• the metallic dopant is Mo, Ta, In, V, Sn, W, Mn, Al, Ga, Ti, Zr, or Hf, in particular Al.
• the film can contain one metallic dopant other than zinc or more than one, for example two or three.
• the film typically contains less metallic dopant than zinc.
• the atomic ratio of the me- tallic dopant and zinc is 10- 10 to 0.1 , more preferably 10- 9 to 0.01 , in particular 10 8 to 10 3 .
• the metallic dopant is placed as it is believed that at least part of the metallic dopant can migrate in the film.
• the concentration of me- tallic dopant is highest at the interface between the layers containing zinc oxide and the layers containing an organic compound.
• the metal layer is in contact with the second laminate.
• the metal layer is usually in between the first and the second laminate, preferably it is in between the first and the second laminate and in direct contact with the first and the second laminate.
• the thickness of the second laminate is preferably 10 to 100 nm, more preferably 20 to 80 nm, in particular 30 to 60 nm, for example 35 to 50 nm.
• the film preferably comprises a substrate, in particular a transparent substrate.
• the substrate preferably faces the first laminate, in particular the first laminate is in contact with the substrate.
• Various transparent substrates can be used, such as glass or polymers.
• Polymers are pre- ferred. Polymers include polyesters such as polyethylene terephthalate (PET) or polyethylene naphthalene-dicarboxylic acid (PEN); polyimides; polyacrylates such as poly methyl methacry- late (PMMA); polyacrylamides; polycarbonates such as poly(bisphenol A carbonate); polyvinyl- alcohol and its derivatives like polyvinyl acetate or polyvinyl butyral; polyvinylchloride; polyole- fins such as polyethylene (PE) or polypropylene (PP); polycycloolefins such as polynorbornene; polyethersulphone; polyamides like polycaprolactam or poly(hexamethylene adipic amide); cel- lulose
• the substrate can have any size and shape.
• the substrate is a film.
• the thickness of the substrate film depends on the application. If the barrier film is bent around a radius of more than 10 mm, the substrate film preferably has a thickness of 100 to 1000 pm, more preferably 100 to 500 pm, for example 100 to 200 pm. If the barrier film is bent with a radius of less than 10 mm the substrate film preferably has a thickness of 1 to 100 pm, more preferably 10 to 70 pm, such as 40 to 60 pm.
• the surface of the substrate is preferably of high planarity.
• High planarity in the context of the present invention means that the highest point on the surface is not more than 100 nm higher than the lowest point on the surface, preferably not more than 50 nm.
• the planarity can be measured with atomic force microscopy, preferably in tapping mode.
• Planarization layers can comprise organic polymers such as acrylates or epoxy, ceramics such as carbides, e.g. SiC, or organic-inorganic hybrid materials such as polyalkylsiloxanes. Organic polymers are preferred.
• planarization layer is made by depositing the material making up the planarization layer on the substrate before applying the laminate.
• a liquid comprising a monomer is cast on the substrate and then cured, for example by heating or by UV initiation.
• the liquid comprising the monomer further comprises a curing aid such as a functionalized benzophenone.
• the liquid comprising the monomer comprises a mixture of mono- and difunctional monomers such that cross-linked organic polymers are obtained after curing.
• Planarization layers comprising ceram- ics are usually obtained by sputtering the material onto the substrate.
• Planarization layers corn- prising organic-inorganic hybrid materials can be obtained by casting a solution comprising an organic-inorganic precursor on the substrate, evaporating the solvent and condensing the or- ganic-inorganic precursor, for example by heating. This process is often referred to as sol-gel process.
• An example for an organic-inorganic precursor is alkyl-trialkoxysilane.
• the precursor is functionalized with a UV curable side group, for example acrylate. In this way the organic-inorganic hybrid material can be cross-linked.
• the material making up the planarization layer has a modulus of elasticity in between that of the substrate material and that of the laminate, for example 10 to 30 GPa.
• the method of determining the modulus of elasticity is described in ISO 527-1 (Plastics - Determination of ten- sile properties, 2012).
• the film according to the present invention is particularly insensitive towards mechanical stress or strain.
• the sheet resistance of the film increases by less than 50 % after bending the film for 500 times around a radius of 0.5 cm.
• the film according to the present invention can be made in various ways.
• the layers can be de- posited from solution or from vapor.
• Vapor deposition methods are preferred. Such methods in- clude chemical vapor deposition (CVD), thermal evaporation, sputtering, or atomic layer deposi- tion (ALD). It is also possible to combine different methods, for example by depositing certain layers with one method and other layers with a different method.
• ALD is preferred for the depo- sition of the first and the second laminate.
• Thermal evaporation, sputtering and ALD is preferred for the metal layer, in particular thermal evaporation.
• ALD in the con- text of the present invention comprises both atomic layer deposition as well as molecular layer deposition or mixtures thereof.
• Typical pressures at which the process is performed range from 1500 to 10 -5 mbar, preferably from 100 to 10 -3 mbar, more preferably from 10 to 0.1 mbar. It is therefore preferable to run the process in an apparatus in which the pressure can be adjusted such as in a vacuum chamber.
• the temperature for the process is in the range of -20 to 500 °C, preferably 0 to 300 °C, in par- ticular 50 to 220 °C.
• metal-organic metal-containing compounds such as alkyl metals; metal alkoxylates such as tetra-isopropoxy zirconium; cyclopentadiene adducts like titanocene; metal carbenes; metal halides such as titanium tetrachloride; carbon monoxide complexes.
• Metal halides are preferred, in particular chlorides.
• various zinc-containing compounds can be used.
• metal-organic zinc-containing compounds are used, such as alkyl zinc such as dimethyl zinc; zinc alkoxylates such as dimethoxy zinc; cyclopentadiene adducts like zincocene; zinc car- benes such as zinc N,N’-dimethylimidazol-2-ylidene; zinc halide such as zinc chloride.
• the zinc-containing compound is an alkyl zinc, in particular a Ci to C 4 alkyl zinc.
• the deposited zinc-containing compound often has to be converted into zinc oxide. This can be achieved by heating above the decomposition temperature of the zinc-containing compound, preferably in the presence of an oxygen.
• the deposited zinc-containing compound is decomposed by bringing it in contact with oxygen-containing compound, for example water, ox ygen, ozone, or an oxygen plasma.
• the layer containing ZnO is made by ALD, preferably a sequence comprising depositing a zinc-containing compound and depositing it by bringing it in contact with an oxygen-containing compound is performed at least once, preferably at least five times, more preferably at least 10 times, in particular at least 20 times. Often, the sequence is performed for not more than 1000 times.
• the compounds described above can preferably be used.
• the organic compound is deposited on deposited metal-organic compounds.
• the surface of the layer containing zinc oxide is reactive, for example due to deposited zinc-con- taining compound which has not yet been brought in contact with an oxygen-containing corn- pound.
• the process for preparing the second laminate comprises the sequence comprising depositing a layer containing zinc oxide, depositing a layer containing an organic compound and depositing a metallic dopant other than zinc, wherein the sequence is performed once or prefer- ably more than once, such as at least twice, at least three time, at least five times or in particu- lar at least ten times, and then depositing another layer containing zinc oxide.
• Said sequence can have the order of
• said sequence can have the order of
• Said sequence can comprise depositing a metallic dopant other than zinc twice, for example in the following order (1) depositing a layer containing zinc oxide
• the surface is exposed to the zinc-containing corn- pound or the organic compound in one ALD cycle for 1 ms to 30 s, preferably 10 ms to 5 s, in particular 50 ms to 1 s. It is preferable to purge the substrate with an inert gas in between ex- posing the surface to the (semi)metal-containing compound or the sulfur-containing compound of different chemical structure, normally for 0.1 s to 10 min, preferably for 1 s to 3 min, in partic- ular for 10 s to 1 min.
• the process according to the present invention is performed as a spatial ALD pro- cess, i.e. the zinc-containing compound, the metal-containing compound, the organic corn- pound, and oxygen-containing compound are passed through separate orifices which are moved relative to the substrate This means that either the substrate is moved and the orifices are kept immobile or the substrate is kept immobile while the orifices are moved or both the substrate and the orifices are moved.
• the speed of motion is from 0.01 to 10 m/s, more preferably 0.02 to 1 m/s, in particular 0.05 to 0.3 m/s.
• the orifices are arranged such that the zinc-containing compound, the metal-containing compound, the oxygen-containing corn- pound and the organic compound hit the surface of the substrate in the order as described for the process above.
• an inert gas such as nitrogen or argon
• the orifices are mounted on a rotating drum around which the substrate is placed, preferably moved.
• a rotating drum around which the substrate is placed, preferably moved.
• Such an apparatus is described in WO 2011 / 099 858 A1.
• the sub- strate is flexible an organic-inorganic substrate can thus be deposited on a large substrate in a so-called roll-to-roll process.
• the film according to the present invention can be used as electrode in an opto-electronic de- vice.
• opto-electronic devices include light-emitting diodes, lasers, solar-cells, or optical sensors.
• PET polyethylene terephtalate
• PET polymer film substrates were cleaned with acetone, ethanol, de-ionized water, and blow-dried with nitrogen to remove contaminants. Characterization
• the thickness of layers containing zinc oxide were measured using spectroscopic ellipsometer (FS-1 multi-wavelength ellipsometer, Film Sense).
• the film morphology was investigated by atomic force microscopy (AFM, XE-100).
• the conductivity of the films was measured using four- point-probe technique (HP4155C, Agilent Technologies). UV-visible spectra were obtained us- ing UV-VIS spectrometer (UV-VIS 8453, Agilent Technologies).
• Ti0 2 was deposited onto PET substrates using titanium(IV) chloride (TiCU) and de-ionized water (H2O) as ALD precursors.
• Argon (Ar) served as both a carrier and a purging gas.
• the DEZ and H2O were evaporated at 20°C.
• the cycle consisted of 1 s exposure to DEZ, 5 s Ar purge, 1 s ex- posure to H 2 0 and 5 s Ar purge.
• the total flow rate of Ar was 100 seem.
• the temperature was kept at 100 °C under the pressure at 400 mbar.
• the cycle is performed for 875 times yielding a T1O2 film of 35 nm thickness.
• An Ag layer was deposited on the T1O2 film by thermal evaporation.
• Zinc oxide containing layers were deposited onto the Ag layer using diethylzinc (DEZ) and de- ionized water (H 2 0) as ALD precursors.
• Argon (Ar) served as both a carrier and a purging gas.
• the DEZ and H 2 0 were evaporated at 20°C.
• the cycle consisted of 1 s exposure to DEZ, 5 s Ar purge, 1 s exposure to H2O and 5 s Ar purge.
• the total flow rate of Ar was 100 seem. During this procedure, the temperature was kept at 100 °C under the pressure at 400 mbar.
• the growth rate of ZnO thin film by ALD method was 1.5 A/cycle. The cycle is performed for 233 times.
• a layer containing an organic compound is made using trimethyl aluminum (TMA, Sigma Aldrich: 99%) and 4-mercaptophenol (4MP, Sigma Aldrich: 97%) as precursors.
• TMA trimethyl aluminum
• 4MP 4-mercaptophenol
• the re- action temperature is lowered to 145 °C.
• Ar served as both a carrier and a purging gas.
• the TMA and 4MP were evaporated at 20 °C and 80 °C, respectively.
• the ALD cycle consisted of 1 s exposure to TMA, 5 s Ar purge, 5 s exposure to 4MP, 60 s Ar purge, 1 s exposure to TMA and 5 s Ar purge. This cycle was performed once.
• a T1O2 film and a Ag film was deposited as in example 1.
• Zinc oxide con- taining layers were deposited onto the Ag layer using diethylzinc (DEZ) and de-ionized water (H2O) as ALD precursors.
• Argon (Ar) served as both a carrier and a purging gas.
• the DEZ and H2O were evaporated at 20°C.
• the cycle consisted of 1 s exposure to DEZ, 5 s Ar purge, 1 s ex- posure to H2O and 5 s Ar purge.
• the total flow rate of Ar was 100 seem. During this procedure, the temperature was kept at 100 °C under the pressure at 400 mbar.
• the growth rate of ZnO thin film by ALD method was 1.5 A/cycle. The cycle is performed for 233 times. Subsequently, a layer containing an organic compound is made using trimethyl aluminum (TMA, Sigma Aldrich: 99%) and 2, 3-dimercapto-1 -propanol (DMP, Sigma Aldrich: 98%) as precursors. The reaction temperature is lowered to 145 °C. Ar served as both a carrier and a purging gas. The TMA and 4MP were evaporated at 20 °C and 80 °C, respectively.
• the ALD cycle consisted of 1 s exposure to TMA, 5 s Ar purge, 5 s exposure to 4MP, 60 s Ar purge, 1 s exposure to TMA and 5 s Ar purge. This cycle was performed once.
• the deposition process for the zinc oxide containing layer and the layer containing an organic compound as described before is alternatingly performed for 14 times yielding a second lami- nate with a thickness of 35 nm.
• a first laminate is made by first depositing Ti0 2 layers using titanium(IV) chloride (TiCU) and de-ionized water (hUO) as ALD precursors.
• Argon (Ar) served as both a car- rier and a purging gas.
• the DEZ and H2O were evaporated at 20°C.
• the cycle consisted of 1 s exposure to DEZ, 5 s Ar purge, 1 s exposure to H2O and 5 s Ar purge.
• the total flow rate of Ar was 100 seem. During this procedure, the temperature was kept at 100 °C under the pressure at 400 mbar.
• the growth rate of Ti0 2 thin film by ALD method was 1 .5 A/cycle.
• the cycle is per- formed for 266 times.
• TiCU titanium(IV) chloride
• DMP 2, 3-dimercapto-1 -propanol
• the reaction temperature is lowered to 145 °C.
• Ar served as both a carrier and a purging gas.
• the TiCU and DMP were evaporated at 20 °C and 80 °C, respectively.
• the ALD cycle consisted of 1 s expo- sure to TiCU, 5 s Ar purge, 5 s exposure to DMP, 60 s Ar purge, 1 s exposure to TiCU and 5 s Ar purge. This cycle was performed once.
• the deposition process for the T1O2 containing layer and the layer containing an organic corn- pound as described before was alternatingly performed for 7 times yielding a first laminate with a thickness of 19 nm.
• a Ag layer as in example 1 and a second laminate as in example 2 was deposited with the difference that the second laminate had a thickness of 40 nm because the zinc oxide containing layer and the layer containing an organic compound as described before is alternatingly performed for 16 times.
• Example 3 was repeated with the first difference that the first laminate had a thickness of 24 nm because the deposition of the T1O2 containing layer and the layer containing an organic corn- pound as described before was alternatingly performed for 1 1 times.
• the second difference is that the second laminate had a thickness of 45 nm because the zinc oxide containing layer and the layer containing an organic compound as described before is alternatingly performed for 18 times.
• the sheet resistance of the films obtained in the examples 1 to 4 were measured after deposi- tion, after bending 500 times and 1000 times around a radius of 0.5 cm.

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