WO2019239525A1 - Dispositif de type élément optique et procédé d'alignement d'élément optique - Google Patents

Dispositif de type élément optique et procédé d'alignement d'élément optique Download PDF

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Publication number
WO2019239525A1
WO2019239525A1 PCT/JP2018/022606 JP2018022606W WO2019239525A1 WO 2019239525 A1 WO2019239525 A1 WO 2019239525A1 JP 2018022606 W JP2018022606 W JP 2018022606W WO 2019239525 A1 WO2019239525 A1 WO 2019239525A1
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WIPO (PCT)
Prior art keywords
optical
light
reflected light
passive element
optical element
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PCT/JP2018/022606
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English (en)
Japanese (ja)
Inventor
洋輔 川本
敬太 望月
芙紀子 廣瀬
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三菱電機株式会社
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Priority to PCT/JP2018/022606 priority Critical patent/WO2019239525A1/fr
Priority to JP2020525012A priority patent/JP6851550B2/ja
Publication of WO2019239525A1 publication Critical patent/WO2019239525A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements

Definitions

  • the present invention relates to an alignment technique for mounting an optical element on a mounting substrate.
  • an optical element typified by a semiconductor laser element When an optical element typified by a semiconductor laser element is used as an optical communication device, the optical element is mounted on a mounting substrate and optically coupled. In order to realize high coupling efficiency between the optical elements, it is required to accurately align the optical elements.
  • Semiconductor laser element position adjustment methods are mainly classified into an active alignment method and a passive alignment method.
  • the active alignment method is a method of adjusting the position by driving a semiconductor laser element and observing the received light intensity of a photodetector using an input signal of the semiconductor laser element in the driving state.
  • the passive alignment method is a method of adjusting the position using the image signal of the semiconductor laser element without driving the semiconductor laser element. There has been proposed a technique for improving the mounting accuracy of a semiconductor laser element by appropriately arranging alignment marks for position adjustment using this passive alignment type position adjustment method.
  • the first alignment mark and the second alignment mark are arranged in the longitudinal direction of the waveguide formed in the active layer when the semiconductor laser device is viewed in plan view from the stacking direction. Is a constant width in the orthogonal direction.
  • the first alignment mark extends along the longitudinal direction of the waveguide with one end thereof in contact with the cut surface of the semiconductor laser element.
  • the second alignment mark is located on the opposite side to the cut surface with respect to the other end opposite to the one end of the first alignment mark that contacts the cut surface of the semiconductor laser element, and extends along the longitudinal direction of the waveguide. Extend.
  • the present invention has been made to solve the above-described problems, and an object thereof is to shorten the time required for position adjustment in the position adjustment method of the active alignment method.
  • the optical element device is a first element having an optical waveguide for propagating light, an incident / exit surface for the light, an optical waveguide for propagating light, and the incident / exit surface of the first element. And at least one of the first element and the second element has a recess in which an inclined surface that reflects the emitted light is formed on the substrate layer. And the recess is formed at a position spaced apart from the optical waveguide by a certain distance.
  • the time required for position adjustment in the position adjustment method of the active alignment method can be shortened.
  • FIG. 1 is a perspective view showing an outline of an optical element device according to Embodiment 1.
  • FIG. 2 is a perspective view of an optical passive element of the optical element device according to Embodiment 1.
  • FIG. 1 is a top view illustrating a configuration of an optical element device according to Embodiment 1.
  • FIG. 4A to 4D are cross-sectional views taken along line AA in FIG. 6 is a perspective view showing an outline of an optical element device according to Embodiment 2.
  • FIG. 6 is a perspective view showing a configuration of an optical passive element of an optical element device according to Embodiment 2.
  • FIG. 6 is a top view showing a configuration of an optical element device according to Embodiment 2.
  • FIG. 8 is a sectional view taken along line BB in FIG. FIG.
  • FIG. 6 is a perspective view showing an outline of an optical element device according to Embodiment 3.
  • FIG. 10 is a cross-sectional view taken along the line CC of FIG. It is a figure which shows the modification of the optical element device which concerns on Embodiment 3.
  • FIG. FIG. 6 is a top view illustrating a configuration of an optical element device according to a fourth embodiment.
  • FIG. 13 is a sectional view taken along line DD of FIG. It is a figure which shows the modification of the optical element device which concerns on Embodiment 4.
  • FIG. 1 is a perspective view showing an outline of an optical element device 1 according to the first embodiment.
  • the optical element device 1 includes a mounting substrate 10, a semiconductor optical amplifier (first element) 20, and an optical passive element (second element) 30 as main components.
  • the mounting substrate 10 is a substrate for mounting the semiconductor optical amplifier 20 and the optical passive element 30.
  • the mounting substrate 10 has a positioning mark (not shown) in a region where the optical passive element 30 is mounted.
  • the positioning mark is a mark for positioning the optical passive element 30 by the passive alignment method with the mounting position of the semiconductor optical amplifier 20 mounted on the mounting substrate 10 as a reference. In the following description, it is assumed that the semiconductor optical amplifier 20 is mounted on the mounting substrate 10.
  • the semiconductor optical amplifier 20 is an edge-emitting optical element having an active layer parallel to the mounting substrate 10.
  • the semiconductor optical amplifier 20 emits spontaneous emission light when a current flows.
  • the emitted light is incident on the optical passive element 30.
  • the semiconductor optical amplifier 20 is composed of a semiconductor compound such as InP as a material.
  • the optical passive element 30 includes a substrate layer 31 formed of, for example, a silicon on insulator (SOI) substrate and an Si layer 32 that is an optical waveguide that propagates light.
  • the optical passive element 30 has a light detection function inside.
  • the Si layer 32 has an incident surface 32 a on the surface facing the emission surface 21 of the semiconductor optical amplifier 20.
  • the semiconductor optical amplifier 20 and the optical passive element 30 are arranged so that the light emitted from the emission surface 21 enters the optical waveguide from the incident surface 32a of the optical passive element 30.
  • XYZ coordinate axes are appropriately shown in the drawing.
  • the direction in which the semiconductor optical amplifier 20 emits spontaneously emitted light is defined as + X direction, and two directions perpendicular to the X-axis direction are defined as Y-axis direction and Z-axis direction.
  • the width direction of the optical passive element 30 coincides with the X-axis direction
  • the stacking direction of the optical passive element 30 coincides with the Y-axis direction
  • the depth direction of the optical passive element 30 coincides with the Z-axis direction.
  • the substrate layer 31 of the optical passive element 30 includes a recess 33 in a part of the substrate surface.
  • the recess 33 is formed by cutting out a part of the side formed by the surface on which the incident surface 32 a is formed and the surface of the substrate layer 31.
  • the shape of the recess 33 is a shape obtained by cutting the substrate layer 31 into a triangular prism shape.
  • the recess 33 has an inclined surface 34 that is a plane having an inclination with respect to the substrate surface of the substrate layer 31. As shown in FIG. 2, the inclined surface 34 has a lower height in the stacking direction (Y-axis direction) from the center of the optical passive element 30 toward the surface on which the incident surface 32 a is formed. It has a slope.
  • the concave portion 33 and the inclined surface 34 are formed only in the substrate layer 31 and are separated from the Si layer 32 having the optical waveguide by a certain distance. Since the concave portion 33 and the inclined surface 34 can be formed by using a semiconductor etching technique, the concave portion 33 and the inclined surface 34 can be introduced only into the substrate layer 31 spaced apart from the Si layer 32 having the optical waveguide by a certain distance.
  • FIG. 2 is a perspective view showing a configuration of the optical passive element 30 of the optical element device 1 according to Embodiment 1.
  • FIG. The relationship between the optical waveguide of the optical passive element 30 and the inclined surface 34 will be described with reference to FIG.
  • a line segment L2 extending along the inclination of the surface 34 intersects. That is, the position of the center 32 b of the optical waveguide in the Z-axis direction matches the position of the center point 35 of the inclined surface 34 in the Z-axis direction.
  • FIG. 3 is a top view showing the configuration of the optical element device 1 according to the first embodiment.
  • 4A to 4D are cross-sectional views taken along line AA in FIG. 3 and 4, it is assumed that the optical passive element 30 is previously positioned in the plane direction of the mounting substrate 10 by the passive alignment method using the positioning marks provided on the mounting surface of the mounting substrate 10. .
  • the positioning technique of the optical passive element 30 by a passive alignment method is well-known, description is abbreviate
  • the inclined surface 34 is subjected to a surface treatment for reflecting light, for example, a metal coating.
  • the inclined surface 34 reflects the emitted light P emitted from the semiconductor optical amplifier 20 to be reflected light Pa, Pb, and Pc.
  • the camera 101 captures the reflected light Pa, Pb, and Pc, and outputs captured image data to a control device (not shown).
  • the control device analyzes the input imaging data and evaluates the relative positional relationship between the semiconductor optical amplifier 20 and the optical passive element 30.
  • the control device controls a drive device (not shown) connected to the optical passive element 30 based on the evaluation result, and moves the optical passive element 30 in the Y-axis direction.
  • the control device performs the above-described control so that the imaging position of the reflected light Pa in the camera 101 matches the target point, and moves the optical passive element 30 in the Y-axis direction.
  • the semiconductor optical amplifier 20 and the optical passive element 30 are adjusted so as to have a target relative positional relationship.
  • the target point described above for example, the point Q (see FIG. 4A) where the imaging position of the reflected light Pa in the camera 101 is closest to the semiconductor optical amplifier 20 side can be set.
  • the control device moves the optical passive element 30 by a predetermined amount in the positive direction of the Y-axis direction.
  • the emitted light P is directed to the center 32b of the optical waveguide.
  • the amount of movement in the positive direction of the Y-axis direction is set based on the positional relationship between the above-described target point and the center 32b of the optical waveguide.
  • the optical passive element 30 calculates the detection intensity of the spontaneous emission light emitted from the semiconductor optical amplifier 20 by using the optical detection function.
  • the control device adjusts the position of the optical passive element 30 based on the calculated detection intensity.
  • the reflection direction of the reflected lights Pc and Pd changes according to the change in the inclination angle of the inclined surface 34. Therefore, the arrangement position of the camera 101 can be appropriately set according to the inclination angle of the inclined surface 34.
  • the semiconductor optical amplifier 20 having the optical waveguide that propagates light and the light emission surface 21, the optical waveguide that propagates light, and the emission of the semiconductor optical amplifier 20.
  • An optical passive element 30 having a light incident surface 32a opposite to the surface 21, and the optical passive element 30 is formed with an inclined surface 34 that reflects light emitted from the semiconductor optical amplifier 20 on the substrate layer 31. Since the concave portion 33 is formed at a position spaced apart from the optical waveguide by a certain distance, the semiconductor optical amplifier 20 and the light are compared with the case where the position adjustment of the active alignment method is performed using only the light detection function. The time required for the alignment process with the passive element 30 can be shortened.
  • FIG. FIG. 5 is a perspective view showing an outline of the optical element device 1A according to the second embodiment.
  • the optical element device 1A according to the second embodiment is configured by modifying the shape of the concave portion of the optical passive element 30A.
  • the same or corresponding parts as those of the optical element device 1 of the invention according to the first embodiment are denoted by the same reference numerals as those used in the first embodiment, and the description thereof is omitted or simplified. Turn into. In the following description, it is assumed that the semiconductor optical amplifier 20 is mounted on the mounting substrate 10.
  • the substrate layer 31 of the optical passive element 30A includes a recess 33A in a part of the substrate surface.
  • the recess 33 ⁇ / b> A is formed by cutting out a part of the side formed by the surface on which the incident surface 32 a is formed and the surface of the substrate layer 31.
  • the shape of the recess 33A is a shape in which the substrate layer 31 is cut out into a triangular pyramid shape.
  • the recess 33A is formed by cutting out so that the apex 38 of the triangular pyramid is located on the substrate surface of the substrate layer 31 and the base of the triangular pyramid is located on the surface side where the incident surface 32a is formed.
  • the two side surfaces of the notched triangular pyramid become two inclined surfaces 36 and 37 having an inclination with respect to the substrate surface of the substrate layer 31.
  • the side where the inclined surface 36 and the inclined surface 37 intersect is such that the height of the optical passive element 30A decreases in the stacking direction (Y-axis direction) from the center of the optical passive element 30A toward the surface on which the incident surface 32a is formed. It has a slope.
  • the recess 33A and the inclined surfaces 36 and 37 are formed only in the substrate layer 31 and are separated from the Si layer 32 having the optical waveguide by a certain distance.
  • the recess 33A and the inclined surfaces 36 and 37 can be introduced only into the substrate layer 31 that is separated from the Si layer 32 having the optical waveguide by a certain distance.
  • FIG. 6 is a perspective view showing the configuration of the optical passive element 30A of the optical element device 1A according to the second embodiment.
  • the relationship between the optical waveguide of the optical passive element 30A and the inclined surfaces 36 and 37 will be described with reference to FIG.
  • a line segment L4 extending along the inclination of the inclined surface 36 or the inclined surface 37 intersects. That is, the position of the center 32b of the optical waveguide in the Z-axis direction matches the position of the apex 38 of the triangular pyramid of the recess 33A.
  • FIG. 7 is a top view showing the configuration of the optical element device 1A according to the second embodiment.
  • 8 is a cross-sectional view taken along line BB in FIG.
  • the optical passive element 30A is positioned in the planar direction by the passive alignment method.
  • the inclined surfaces 36 and 37 are subjected to a surface treatment for reflecting light, for example, a metal coating.
  • the inclined surfaces 36 and 37 reflect the emitted light P emitted from the semiconductor optical amplifier 20 to be reflected light Pd.
  • the camera 101 images the reflected light Pd and outputs the image data to the control device.
  • the control device analyzes the imaging data and evaluates the relative positional relationship between the semiconductor optical amplifier 20 and the optical passive element 30A. Based on the evaluation result, the control device controls the driving device connected to the optical passive element 30A to move the optical passive element 30A in the Y-axis direction.
  • the optical passive element 30A can be aligned in the plane direction of the mounting substrate 10 using the concave portion 33A in addition to the Y-axis direction.
  • the imaging position of the reflected light Pd in the camera 101 moves in the X-axis direction.
  • the optical passive element 30A is moved in the Z-axis direction shown in FIG. 6, the imaging position in the camera 101 moves in the Y-axis direction.
  • the position of the optical passive element 30A is moved in the Z-axis direction from the point Ra to the point Rb shown in FIG.
  • the imaging position of the reflected light Pd in the camera 101 moves from the left to the right in FIG. And move left again.
  • the mounting substrate 10 is aligned in the planar direction.
  • the control device performs the above-described control while moving the optical passive element 30A in the Y-axis direction so that the imaging position of the reflected light Pd in the camera 101 coincides with the target point.
  • the semiconductor optical amplifier 20 and the optical passive element 30A are adjusted so as to have a target relative positional relationship.
  • the target point described above for example, the point Q (see FIG. 8) where the imaging position of the reflected light Pd in the camera 101 is closest to the semiconductor optical amplifier 20 side can be set.
  • the control device moves the optical passive element 30A by a predetermined amount in the positive direction of the Y-axis direction.
  • the amount of movement in the positive direction of the Y-axis direction is set based on the positional relationship between the above-described target point and the center 32b of the optical waveguide. This completes the first alignment process between the semiconductor optical amplifier 20 and the optical passive element 30A.
  • the optical passive element 30A calculates the detection intensity of the spontaneous emission light emitted by the semiconductor optical amplifier 20 by using the optical detection function.
  • the control device adjusts the position of the optical passive element 30A based on the calculated detection intensity.
  • the arrangement position of the camera 101 can be appropriately set according to the inclination angle of the inclined surfaces 36 and 37.
  • the recess 33A is provided by cutting out a part of the side formed by the surface on which the incident surface 32a is formed and the surface of the substrate layer 31, and the shape thereof is a triangular pyramid. Since the shape is notched, the optical passive element can be aligned in the plane direction of the mounting substrate in addition to the Y-axis direction. Further, as in the first embodiment, the time required for the alignment process between the semiconductor optical amplifier and the optical passive element can be shortened as compared with the case where the position adjustment of the active alignment method is performed using only the light detection function. it can.
  • FIG. 9 is a perspective view showing an outline of the optical element device 1B according to the third embodiment.
  • 10 is a cross-sectional view taken along the line CC of FIG.
  • the optical element device 1B according to the third embodiment is configured by changing the arrangement of the optical passive element 30B and the camera 101.
  • the substrate layer 31 of the optical passive element 30B is disposed so as to face the mounting substrate 10.
  • the same or corresponding parts as those of the optical element device 1B according to the first embodiment are denoted by the same reference numerals as those used in the first embodiment, and the description thereof is omitted or simplified. .
  • the semiconductor optical amplifier 20 is mounted on the mounting substrate 10.
  • the configuration of the optical passive element 30B shown in FIGS. 9 and 10 is the same as that of the first embodiment, and has a substrate layer 31, a Si layer 32, and a recess 33.
  • the optical passive element 30B is arranged such that the substrate layer 31 faces the mounting substrate 10 and the Si layer 32 having the optical waveguide is the uppermost layer.
  • the mounting substrate 10 is made of a material that does not absorb the reflected light reflected by the inclined surface 34 of the optical passive element 30B. Since the reflected light is not absorbed by the mounting substrate 10, the reflected light is imaged by the camera 101 disposed below the mounting substrate 10.
  • the optical passive element 30B reflects the emitted light P emitted from the semiconductor optical amplifier 20 by the inclined surface 34 to obtain reflected light Pe.
  • the camera 101 captures the reflected light Pe and outputs image data to the control device.
  • the control device analyzes the input imaging data and evaluates the relative positional relationship between the semiconductor optical amplifier 20 and the optical passive element 30. Based on the evaluation result, the control device controls the driving device connected to the optical passive element 30 to move the optical passive element 30 in the Y-axis direction.
  • the control device performs the above-described control while moving the optical passive element 30B in the Y-axis direction so that the imaging position of the reflected light Pe in the camera 101 coincides with the target point.
  • adjustment is performed so that the semiconductor optical amplifier 20 and the optical passive element 30B have a target relative positional relationship. Since the first alignment process and the second alignment process are the same as those in the first embodiment, detailed description thereof is omitted.
  • FIG. 11 is a diagram illustrating a modification of the optical element device 1B according to the third embodiment.
  • the mounting substrate 10 absorbs the reflected light Pe
  • the hole 11 through which the reflected light Pe passes is formed in the mounting substrate 10.
  • the camera 101 images the reflected light Pe that has passed through the hole 11.
  • the material of the mounting substrate 10 can be freely selected without limitation.
  • the mounting substrate 10 on which the semiconductor optical amplifier 20 and the optical passive element 30 are mounted is provided, and the mounting substrate 10 does not absorb the reflected light reflected by the inclined surface 34. Since it is configured to include the hole 11 through which the reflected light passes, the reflected light can be imaged from the non-mounting surface of the mounting substrate 10. Moreover, when the hole part 11 is provided, the material of the mounting substrate 10 can be selected freely.
  • the substrate layer 31 of the optical passive element 30 ⁇ / b> A shown in the second embodiment is disposed so as to face the mounting substrate 10, and the reflected light reflected by the inclined surfaces 36 and 37 is reflected by the camera 101. It is good also as a structure imaged by.
  • FIG. 12 is a top view showing a configuration of an optical element device 1C according to the fourth embodiment.
  • 13 is a cross-sectional view taken along the line DD of FIG.
  • the optical passive element 30C according to the fourth embodiment allows the spontaneous emission light emitted from the semiconductor optical amplifier 20 to pass through without being absorbed in the substrate layer 31, reflects the reflected light by the inclined surface 34, and outputs the reflected light to the camera 101 side.
  • the same or corresponding parts as those of the optical element devices 1 and 1B according to the first and third embodiments are denoted by the same reference numerals as those used in the first embodiment, and the description thereof is omitted. Or simplify. In the following description, it is assumed that the semiconductor optical amplifier 20 is mounted on the mounting substrate 10.
  • the optical passive element 30C changes the formation position of the recess 33 with respect to the optical passive element 30 shown in the first embodiment.
  • the recess 33 is formed so as to cut out a part of the side on the semiconductor optical amplifier 20 side of the surface of the substrate layer 31.
  • the recess 33 has an inclined surface 34 that is a flat surface inclined with respect to the substrate surface of the substrate layer 31. As shown in FIG. 13, the inclined surface 34 has a height in the stacking direction (Y axis) from the center of the optical passive element 30 ⁇ / b> C toward the surface facing the surface on which the incident surface 32 a is formed. Direction).
  • the concave portion 33 and the inclined surface 34 are formed only in the substrate layer 31 and are separated from the Si layer 32 having the optical waveguide by a certain distance.
  • the concave portion 33 and the inclined surface 34 can be formed by using a semiconductor etching technique, the concave portion 33 and the inclined surface 34 can be introduced only into the substrate layer 31 spaced apart from the Si layer 32 having the optical waveguide by a certain distance.
  • the inclined surface 34 extends on a line extending in the Y-axis direction in FIG. 13 and passing through the center 32b of the optical waveguide of the Si layer 32 and a plane parallel to the XY plane. And a line segment extending along the inclination of the inclined surface 34 intersects. That is, the position of the center 32b of the optical waveguide in the Z-axis direction matches the position of the center point of the inclined surface 34 in the Z-axis direction.
  • the mounting substrate 10 is made of a material that does not absorb the reflected light reflected by the inclined surface 34 of the optical passive element 30C. Since the reflected light is not absorbed by the mounting substrate 10, the reflected light is imaged by the camera 101 disposed below the mounting substrate 10. Since the first alignment process and the second alignment process are the same as those in the first embodiment, detailed description thereof is omitted.
  • FIG. 14 is a diagram illustrating a modification of the optical element device 1C according to the fourth embodiment.
  • the mounting substrate 10 absorbs the reflected light
  • the hole 11 through which the reflected light passes is formed in the mounting substrate 10.
  • the camera 101 images the reflected light that has passed through the hole 11.
  • the material of the mounting substrate 10 can be freely selected without limitation.
  • the mounting substrate 10 on which the semiconductor optical amplifier 20 and the optical passive element 30 are mounted is provided, and the mounting substrate 10 does not absorb the reflected light reflected by the inclined surface 34. Since it is configured to include the hole 11 through which the reflected light passes, the reflected light can be imaged from the non-mounting surface of the mounting substrate 10. Thereby, the freedom degree of the structure of the optical passive element 30 can be raised. Moreover, when the hole part 11 is provided, the material of the mounting substrate 10 can be selected freely.
  • the configuration in which the concave portions having the inclined surfaces are formed in the optical passive elements 30, 30A, 30B, and 30C is shown.
  • the optical passive elements 30, 30A, 30B, and 30C are illustrated.
  • at least an element to which light is incident includes a recess having an inclined surface.
  • the present invention can be freely combined with each embodiment, modified any component of each embodiment, or omitted any component in each embodiment. Is possible.
  • the optical element device according to the present invention is preferably applied to an optical device or the like that requires high coupling efficiency between optical elements.
  • 1, 1A, 1B, 1C optical element device 10 mounting substrate, 11 hole, 20 semiconductor optical amplifier, 21 exit surface, 30, 30A, 30B, 30C optical passive element, 31 substrate layer, 32 Si layer, 32a entrance surface 32b, optical waveguide center, 33, 33A recess, 34, 36, 37 inclined surface, 35 center point, 38 apex.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

L'invention concerne un dispositif de type élément optique comprenant : un amplificateur optique à semi-conducteur (20) ayant un guide d'ondes optique à travers lequel la lumière se propage et des surfaces d'incidence/d'émission pour la lumière ; et un élément optique passif (30) ayant un guide d'ondes optique à travers lequel la lumière se propage et une surface d'incidence pour la lumière opposée à la surface d'émission de l'amplificateur optique à semi-conducteur (20), l'élément optique passif (30) présentant un évidement (33, 33A) dans lequel une pente (34, 36, 37) pour réfléchir la lumière émise vers une couche de substrat (32) est formée, et l'évidement (33, 33A) étant formé à une position séparée du guide d'onde optique par une distance fixe.
PCT/JP2018/022606 2018-06-13 2018-06-13 Dispositif de type élément optique et procédé d'alignement d'élément optique WO2019239525A1 (fr)

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PCT/JP2018/022606 WO2019239525A1 (fr) 2018-06-13 2018-06-13 Dispositif de type élément optique et procédé d'alignement d'élément optique
JP2020525012A JP6851550B2 (ja) 2018-06-13 2018-06-13 光素子の調芯方法

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11261172A (ja) * 1998-12-17 1999-09-24 Matsushita Electron Corp 半導体レーザ装置
JP2001203419A (ja) * 2000-01-21 2001-07-27 Sumitomo Electric Ind Ltd 発光装置
JP2003240511A (ja) * 2002-02-14 2003-08-27 Sony Corp レーザ光源の発光点位置検出方法及び装置
JP2010210836A (ja) * 2009-03-10 2010-09-24 Furukawa Electric Co Ltd:The ティルトミラー駆動装置およびティルトミラー光信号交換装置
JP2012247529A (ja) * 2011-05-26 2012-12-13 Hitachi Media Electoronics Co Ltd 光源装置および光軸調整方法
JP2014048577A (ja) * 2012-09-03 2014-03-17 Fujitsu Ltd 光ファイバの接合方法及び光ファイバの接合装置
US20160011385A1 (en) * 2013-03-27 2016-01-14 Ccs Technology, Inc. Optoelectronic device and method for assembling an optoelectronic device
JP2018010179A (ja) * 2016-07-14 2018-01-18 アルプス電気株式会社 表示装置およびヘッドアップディスプレイ装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2955781B2 (ja) * 1991-06-25 1999-10-04 京セラ株式会社 光導波路の接続構造
JPH05281443A (ja) * 1992-03-31 1993-10-29 Toshiba Corp 光結合方法
JP2005148466A (ja) * 2003-11-17 2005-06-09 Matsushita Electric Ind Co Ltd 光ファイバのアライメント装置及びアライメント方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11261172A (ja) * 1998-12-17 1999-09-24 Matsushita Electron Corp 半導体レーザ装置
JP2001203419A (ja) * 2000-01-21 2001-07-27 Sumitomo Electric Ind Ltd 発光装置
JP2003240511A (ja) * 2002-02-14 2003-08-27 Sony Corp レーザ光源の発光点位置検出方法及び装置
JP2010210836A (ja) * 2009-03-10 2010-09-24 Furukawa Electric Co Ltd:The ティルトミラー駆動装置およびティルトミラー光信号交換装置
JP2012247529A (ja) * 2011-05-26 2012-12-13 Hitachi Media Electoronics Co Ltd 光源装置および光軸調整方法
JP2014048577A (ja) * 2012-09-03 2014-03-17 Fujitsu Ltd 光ファイバの接合方法及び光ファイバの接合装置
US20160011385A1 (en) * 2013-03-27 2016-01-14 Ccs Technology, Inc. Optoelectronic device and method for assembling an optoelectronic device
JP2018010179A (ja) * 2016-07-14 2018-01-18 アルプス電気株式会社 表示装置およびヘッドアップディスプレイ装置

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