WO2019230194A1 - 投影マスク、およびレーザ照射装置 - Google Patents

投影マスク、およびレーザ照射装置 Download PDF

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Publication number
WO2019230194A1
WO2019230194A1 PCT/JP2019/015217 JP2019015217W WO2019230194A1 WO 2019230194 A1 WO2019230194 A1 WO 2019230194A1 JP 2019015217 W JP2019015217 W JP 2019015217W WO 2019230194 A1 WO2019230194 A1 WO 2019230194A1
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WO
WIPO (PCT)
Prior art keywords
film
laser light
metal film
projection mask
laser
Prior art date
Application number
PCT/JP2019/015217
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English (en)
French (fr)
Japanese (ja)
Inventor
水村　通伸
Original Assignee
株式会社ブイ・テクノロジー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社ブイ・テクノロジー filed Critical 株式会社ブイ・テクノロジー
Priority to CN201980015207.7A priority Critical patent/CN111758150A/zh
Publication of WO2019230194A1 publication Critical patent/WO2019230194A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Definitions

  • the present invention relates to a projection mask and a laser irradiation apparatus.
  • Patent Document 1 a projection mask that is used for laser annealing and projects a mask pattern on a substrate surface in a reduced size by laser light is known.
  • laser annealing for example, a predetermined region in a substrate such as an amorphous silicon thin film can be polycrystallized by instantaneously heating with a laser beam to form a polysilicon thin film.
  • the conventional projection mask when the light shielding portion of the mask pattern is irradiated with high energy laser light, the absorbed energy is changed to heat, and the light shielding portion may be oxidized or melted.
  • An object of the present invention is to provide a projection mask that can effectively reflect laser light, suppress absorption of energy of the laser light, and improve durability.
  • a projection mask of the present invention is a projection mask that is disposed in a projection lens irradiated with laser light and transmits the laser light, and a transmission layer that transmits the laser light;
  • membrane is arrange
  • a laser irradiation apparatus of the present invention includes a light source that generates laser light, and a projection lens that irradiates the laser light onto a predetermined region of an amorphous silicon thin film attached to a thin film transistor.
  • the projection mask is arranged on the projection lens.
  • the reflective film having a refractive index larger than that of the transmissive layer and the metal film disposed on the opposite side of the transmissive layer that shields the laser light and sandwiches the reflective film in the stacking direction are provided. For this reason, it becomes possible to reflect a laser beam effectively in the boundary part of a reflecting film and a metal film, and it can suppress that a metal film absorbs a laser beam. Thereby, it is possible to effectively reflect the laser beam, suppress the absorption of the energy of the laser beam, and improve the durability of the projection mask.
  • the laser irradiation apparatus 10 is used for, for example, irradiating a laser beam to a region where a channel region is to be formed and annealing it to polycrystallize the channel region. It is a device.
  • the laser irradiation apparatus 10 includes a light source (not shown) that generates laser light and a projection lens 20.
  • the laser irradiation device 10 is used, for example, when forming a thin film transistor of a pixel such as a peripheral circuit of a liquid crystal display device.
  • a gate electrode made of a metal film such as Al is patterned on the substrate by sputtering.
  • a gate insulating film made of a SiN film is formed on the entire surface of the substrate by a low temperature plasma CVD method.
  • an amorphous silicon thin film is formed on the gate insulating film by, for example, a plasma CVD method. That is, an amorphous silicon thin film is formed (deposited) on the entire surface of the substrate. Finally, a silicon dioxide (SiO 2 ) film is formed on the amorphous silicon thin film. Then, the laser irradiation apparatus 10 illustrated in FIG. 1 performs annealing by irradiating a predetermined region on the gate electrode of the amorphous silicon thin film (a region that becomes a channel region in the thin film transistor) with laser light. Crystallize into polysilicon.
  • a glass substrate or the like can be used as the substrate, but it is not necessarily a glass material, and any material such as a resin substrate formed of a material such as a resin may be used.
  • the laser light L emitted from a light source has a beam diameter formed by the illumination optical system 12 and the luminance distribution is made uniform.
  • the light source is, for example, an excimer laser that emits laser light L having a wavelength of 308 nm or 248 nm at a predetermined repetition period.
  • the wavelength is not limited to these examples, and may be any wavelength.
  • the laser beam L passes through the projection mask 30 provided on the microlens array, is separated into a plurality of laser beams, and is irradiated onto a predetermined region of the amorphous silicon thin film coated on the substrate.
  • the amorphous silicon thin film is instantaneously heated and melted to become a polysilicon thin film. Since the polysilicon thin film has higher electron mobility than the amorphous silicon thin film, a current flows easily, and can be used for a channel region in which a source and a drain are electrically connected in a thin film transistor.
  • the microlens array is not necessarily used, and the laser light L may be irradiated using one projection lens 20.
  • the projection lens 20 is provided with a projection mask 30 that transmits the laser light L.
  • FIG. 2 is a schematic cross-sectional view of a projection mask 90 according to a conventional example
  • FIG. 3 is a diagram showing the relationship between the irradiation time of laser light and the temperature in the projection mask 90 according to the conventional example.
  • the thickness (size of the lamination direction) of each member is expanded and expressed typically.
  • the projection mask 90 includes a transmission layer 91 that transmits the laser light L, a metal film 92 that blocks the laser light L, and a protective film 93 that protects the metal film 92.
  • the transmission layer 91, the metal film 92, and the protective film 93 are stacked on each other.
  • the direction in which the transmission layer 91, the metal film 92, and the protective film 93 are stacked is referred to as a stacking direction.
  • the laser beam L is applied to the projection mask 90 from one direction of the stacking direction.
  • the transmissive layer 91, the metal film 92, and the protective film 93 are arranged in this order from the side irradiated with the laser light L to the opposite side in the stacking direction. Quartz (Qz) is employed for the transmission layer 91.
  • the thickness of the transmissive layer 91 is 5 mm, for example.
  • the metal film 92 is a light shielding film for defining an opening through which the laser light L is transmitted.
  • the metal film 92 is an aluminum thin film (Al).
  • the thickness of the metal film 92 is, for example, 200 nm.
  • the metal film 92 has a refractive index smaller than that of the transmission layer 91.
  • the protective film 93 covers the metal film 92 to prevent the metal film 92 from being contaminated.
  • a first opening 95 is formed in the metal film 92 at a predetermined interval.
  • the protective film 93 is disposed so as to fill the first opening 95 of the metal film 92.
  • Silicon dioxide (SiO 2 ) is employed for the protective film 93.
  • the thickness of the metal film 92 excluding the inside of the first opening 95 is 200 nm.
  • the laser light L is reflected at the boundary between the transmission layer 91 and the metal film 92 (see FIG. 2: reflection 1). Then, no reflection occurs in the first opening 95 of the metal film 92, and the laser light L is transmitted (see FIG. 2: Transmission 1). Thereby, the laser beam L can be separated into a plurality of laser beams.
  • the metal film 92 absorbs a part of the energy of the laser light L, so that the temperature rises.
  • the temporal change in temperature at that time is shown in FIG.
  • the temperature of the metal film 92 rises as the irradiation time of the laser light L elapses. It has been confirmed that the metal film 92 is damaged before the irradiation with the laser beam L is completed.
  • the temperature rise time constant calculated by fitting the curve of the temperature change shown in FIG. 3 is 145 sec
  • the temperature fall time constant calculated in the same manner is 173 sec.
  • the projection mask 30 of the present invention aims to solve these problems.
  • FIG. 4 is a schematic sectional view of a projection mask 30 according to an embodiment of the present invention.
  • the projection mask 30 includes a transmissive layer 31 that transmits the laser light L, a reflective film 32 that has a higher refractive index than the transmissive layer 31, a metal film 33 that shields the laser light L, and a protective film 34 that protects the metal film 33.
  • the transmissive layer 31, the reflective film 32, the metal film 33, and the protective film 34 are arranged in this order from the side irradiated with the laser light L to the opposite side in the stacking direction of each other.
  • Quartz (Qz) is adopted for the transmission layer 31.
  • the thickness of the transmissive layer 31 is, for example, 5 mm.
  • As the reflective film 32 a dielectric multilayer film that is a laminated member of hafnium oxide (HfO) and silicon dioxide (SiO 2 ) is employed.
  • the thickness of the reflective film 32 is, for example, 348 nm.
  • the metal film 33 is a light shielding film for defining an opening through which the laser light L is transmitted.
  • the metal film 33 is an aluminum thin film (Al).
  • the thickness of the metal film 33 is, for example, 200 nm.
  • the metal film 33 has a refractive index smaller than that of the transmission layer 31.
  • the protective film 34 covers the metal film 33 to prevent the metal film 33 from being contaminated. First openings 35 are formed in the metal film 33 at a predetermined interval.
  • the protective film 34 is disposed so as to fill the first opening 35 of the metal film 33.
  • Silicon dioxide (SiO 2 ) is employed for the protective film 34.
  • the thickness of the metal film 33 excluding the inside of the first opening 35 is 100 nm.
  • the reflective film 32 may or may not cover the first opening 35 of the metal film 33.
  • the second opening 36 is formed in a portion of the reflective film 32 that overlaps the first opening 35 in the stacking direction.
  • the size of the second opening 36 is equal to the size of the first opening 35 in a plan view as viewed from the stacking direction.
  • a protective film 34 is disposed in the second opening 36.
  • the laser beam L is reflected at the boundary portion between the reflection film 32 and the metal film 33 (see FIG. 4: reflection 2). Then, no reflection occurs in the first opening 35 of the metal film 33, and the laser light L is transmitted (see FIG. 4: transmissions 2 and 3). That is, in the metal film 33, the portion overlapping the first opening 35 in the stacking direction (see FIG. 4: transmission 2) and the second opening 36 of the reflection film 32 (see FIG. 4: transmission 3) are laser beams. L is transparent. Thereby, the laser beam L can be separated into a plurality of laser beams L.
  • FIG. 5 is a diagram for explaining the difference in reflectance in the verification test.
  • FIG. 6 is a diagram for explaining a difference in transmittance in the verification test.
  • the reflectance and transmittance of each projection mask corresponding to the wavelength of the laser beam L are shown.
  • the KrF laser beam L having a wavelength of 248 nm, which is indicated by a broken line in FIGS.
  • the difference in reflectance in each configuration will be described.
  • the reflectance at the boundary portion between the transmission layer 91 and the metal film 92 is 89.8% (see FIGS. 2 and 5: reflection 1).
  • the reflectance at the boundary portion between the reflection film 32 and the metal film 33 is 95.7% (see FIGS. 4 and 5: reflection 2).
  • the reflectance generally tends to increase as the difference in refractive index increases. That is, since the reflective film 32 having a refractive index larger than that of the transmissive layer 31 is disposed between the transmissive layer 31 and the metal film 33, the difference in refractive index between the reflective film 32 and the metal film 33 is conventionally increased. The difference in refractive index between the transmissive layer 91 and the metal film 92 in the example is larger. Thereby, the reflectance at the boundary portion between the reflective film 32 and the metal film 33 of the present invention is larger than the reflectance at the boundary portion between the transmission layer 91 and the metal film 92 of the conventional example.
  • the transmittance at the first opening 95 is 91.9% (see FIGS. 2 and 6: Transmission 1).
  • the transmittance of the first opening 35 covered by the reflective film 32 is 89.4% (see FIGS. 4 and 6: transmission 2).
  • the transmittance of the portion of the reflective film 32 that overlaps with the second opening 36 in the stacking direction is 90.7% (see FIG. 4 and FIG. 6 and the transmission 3). That is, it was confirmed that the transmittance of the laser beam L was sufficiently ensured even when the reflective film 32 was disposed between the transmissive layer 31 and the metal film 33.
  • the reflective film 32 having a refractive index larger than that of the transmissive layer 31 and the transmissive layer that shields the laser light L and sandwiches the reflective film 32 in the stacking direction.
  • a metal film 33 disposed on the opposite side of 31. For this reason, it becomes possible to reflect the laser beam L effectively in the boundary part of the reflective film 32 and the metal film 33, and it can suppress that the metal film 33 absorbs the laser beam L. Thereby, the laser beam L can be effectively reflected to suppress the absorption of energy of the laser beam L, and the durability of the projection mask 30 can be improved.
  • the laser irradiation apparatus 10 includes such a projection mask 30, it is possible to improve the durability of the projection mask 30 where durability tends to be a problem when the laser irradiation apparatus 10 is used for a long period of time. Maintainability of the laser irradiation apparatus 10 can be ensured.
  • the reflective film 32 may be another dielectric multilayer film, or any material can be selected as long as it is a member having a refractive index larger than that of the transmissive layer 31.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
PCT/JP2019/015217 2018-06-01 2019-04-05 投影マスク、およびレーザ照射装置 WO2019230194A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201980015207.7A CN111758150A (zh) 2018-06-01 2019-04-05 投影掩模及激光照射装置

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JP2018106274A JP7126244B2 (ja) 2018-06-01 2018-06-01 投影マスク、およびレーザ照射装置
JP2018-106274 2018-06-01

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57181537A (en) * 1981-05-01 1982-11-09 Agency Of Ind Science & Technol Light pattern projector
JPH07191215A (ja) * 1993-12-27 1995-07-28 Canon Inc レーザマスクおよびその製造方法
JP2001053021A (ja) * 1999-08-16 2001-02-23 Nec Corp 半導体薄膜製造装置
JP2006287129A (ja) * 2005-04-04 2006-10-19 Sumitomo Heavy Ind Ltd レーザ照射装置、及びレーザ照射方法
JP2008055467A (ja) * 2006-08-31 2008-03-13 Semiconductor Energy Lab Co Ltd レーザビーム照射装置及びレーザビーム照射方法
JP2011077480A (ja) * 2009-10-02 2011-04-14 Nikon Corp 反射型マスク、露光装置及び露光方法並びにデバイス製造方法
JP2012004250A (ja) * 2010-06-15 2012-01-05 V Technology Co Ltd 低温ポリシリコン膜の形成装置及び方法
JP2016219581A (ja) * 2015-05-19 2016-12-22 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置及び薄膜トランジスタの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05210233A (ja) * 1992-01-31 1993-08-20 Nippon Seiko Kk フォトマスク
WO2011027972A2 (ko) * 2009-09-02 2011-03-10 위아코퍼레이션 주식회사 레이저 반사형 마스크 및 그 제조방법
JP5724509B2 (ja) * 2011-03-28 2015-05-27 大日本印刷株式会社 フォトマスクおよびフォトマスクブランクス

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57181537A (en) * 1981-05-01 1982-11-09 Agency Of Ind Science & Technol Light pattern projector
JPH07191215A (ja) * 1993-12-27 1995-07-28 Canon Inc レーザマスクおよびその製造方法
JP2001053021A (ja) * 1999-08-16 2001-02-23 Nec Corp 半導体薄膜製造装置
JP2006287129A (ja) * 2005-04-04 2006-10-19 Sumitomo Heavy Ind Ltd レーザ照射装置、及びレーザ照射方法
JP2008055467A (ja) * 2006-08-31 2008-03-13 Semiconductor Energy Lab Co Ltd レーザビーム照射装置及びレーザビーム照射方法
JP2011077480A (ja) * 2009-10-02 2011-04-14 Nikon Corp 反射型マスク、露光装置及び露光方法並びにデバイス製造方法
JP2012004250A (ja) * 2010-06-15 2012-01-05 V Technology Co Ltd 低温ポリシリコン膜の形成装置及び方法
JP2016219581A (ja) * 2015-05-19 2016-12-22 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置及び薄膜トランジスタの製造方法

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JP7126244B2 (ja) 2022-08-26
JP2019212712A (ja) 2019-12-12
CN111758150A (zh) 2020-10-09

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