WO2019223345A1 - 去气腔室以及去气方法 - Google Patents

去气腔室以及去气方法 Download PDF

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Publication number
WO2019223345A1
WO2019223345A1 PCT/CN2019/071748 CN2019071748W WO2019223345A1 WO 2019223345 A1 WO2019223345 A1 WO 2019223345A1 CN 2019071748 W CN2019071748 W CN 2019071748W WO 2019223345 A1 WO2019223345 A1 WO 2019223345A1
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WIPO (PCT)
Prior art keywords
wafer
heating
cooling
degassing chamber
shielding member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/071748
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English (en)
French (fr)
Inventor
徐刚
张军
郑波
马振国
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to SG11202011445PA priority Critical patent/SG11202011445PA/en
Priority to KR1020207032362A priority patent/KR20200140376A/ko
Publication of WO2019223345A1 publication Critical patent/WO2019223345A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins

Definitions

  • Embodiments of the present disclosure relate to a degassing chamber and a degassing method.
  • the wafers are usually heated and cooled.
  • the wafer is first heated to a certain temperature to remove water vapor and other volatile substances, and then the wafer is cooled to room temperature to facilitate subsequent processes.
  • a degassing chamber is provided.
  • the inside of the degassing chamber is provided with a heating device, a cooling device and a mobile support device; wherein,
  • the cooling device is spaced apart from the heating device and is oppositely disposed;
  • the moving support device is used to carry a wafer, and can drive the wafer to move between the heating device and the cooling device to heat and cool the wafer, respectively.
  • it further includes a shielding member that is movable, and when the moving support device drives the wafer to move to a heating position capable of being heated by the heating device, the shielding member can be moved to The wafer is exposed to a first position of the heating device; when the wafer is moved to a cooling position capable of being cooled by the cooling device, the shielding member can be moved to the heating A second position between the device and the wafer to block the wafer.
  • a shielding member that is movable, and when the moving support device drives the wafer to move to a heating position capable of being heated by the heating device, the shielding member can be moved to The wafer is exposed to a first position of the heating device; when the wafer is moved to a cooling position capable of being cooled by the cooling device, the shielding member can be moved to the heating A second position between the device and the wafer to block the wafer.
  • it further includes a protective cover in communication with the interior of the degassing chamber, and the shielding member is placed in the protective cover when it is located in the first position.
  • it further includes a rotation driving mechanism for driving the shielding member to rotate between the first position and the second position.
  • the rotary driving mechanism includes a rotary link and a rotary electric machine, wherein,
  • the rotating link is vertically disposed on a side of the shielding member near the protective cover, and is connected to the shielding member and the rotating electric machine, respectively;
  • the rotary motor is used to drive the rotary link to rotate around an axis of the rotary link.
  • the shield is foldable or stretchable, and when the wafer is moved to the heating position by the moving support device, the shield can be folded and moved to the first position; in the When the moving supporting device drives the wafer to move to the cooling position, the shielding member can be extended to move to the second position.
  • the heating device includes a heating plate, and a heating element is provided in the heating plate; and an arrangement density of the heating elements in a direction from a center of the heating plate to an edge of the heating plate gradually increase.
  • the heating element includes a heating wire that is wound into a planar spiral structure around the axis of the heating plate, and in the direction from the center of the heating plate to the edge of the heating plate, two adjacent The spacing between the turns of the heating wire gradually decreases.
  • the wafer when the wafer is located in the heating position, there is a preset distance between two surfaces of the wafer and the heating plate opposite to each other.
  • the preset distance ranges from 0.05 mm to 0.15 mm.
  • the cooling device includes a cooling plate, and a wafer cooling channel for conveying a cooling medium is provided in the cooling plate.
  • the heating device and the cooling device are disposed in a vertical direction, and the heating device is located above the cooling device.
  • the mobile support device includes at least three support pins and a lifting drive mechanism, wherein:
  • the at least three support columns are vertically passed through the cooling device, and are configured to jointly support the wafer between the heating device and the cooling device;
  • the lifting driving mechanism is used to drive the at least three support columns to rise or fall.
  • At least a chamber cooling channel for conveying a cooling medium is provided in a chamber wall of the degassing chamber near the heating device.
  • a degassing method which is performed in a degassing chamber provided in an embodiment of the present disclosure, and the method includes:
  • the moving support device is used to move the wafer to a cooling position capable of being cooled by the cooling device to cool the wafer.
  • the degassing chamber includes a shield that is movable
  • the method further includes:
  • the moving support device drives the wafer to move to the heating position, moving the shielding member to a first position where the wafer is exposed to the heating device;
  • the shielding member is moved between the heating device and the wafer to cover the wafer at a second position.
  • Figure 1 illustrates a degassing chamber according to one technique
  • Figure 2 illustrates a heating chamber according to one technique
  • FIG. 3 (a) illustrates a degassing chamber according to an embodiment of the present disclosure
  • FIG. 3 (b) shows a schematic cross-sectional view of a heating plate of a heating device provided in a degassing chamber according to an embodiment of the present disclosure
  • FIG. 4 (a) and 4 (b) respectively show a degassing chamber according to an embodiment of the present disclosure, wherein FIG. 4 (a) is a schematic diagram in a heating state, and FIG. 4 (b) is a schematic diagram in a cooling state. ;
  • FIG. 5 (a) and 5 (b) respectively show a degassing chamber according to an embodiment of the present disclosure, wherein FIG. 5 (a) is a schematic diagram in a heating state, and FIG. 5 (b) is a schematic diagram in a cooling state. ;as well as
  • FIG. 6 illustrates a chamber wall of a degassing chamber according to an embodiment of the present disclosure.
  • Figure 1 shows a degassing chamber.
  • the degassing chamber 101 has a transparent medium window 103.
  • a heating light source 102 is provided outside the degassing chamber 101 and near the transparent medium window 10.
  • a cooling device 104 is provided inside the degassing chamber 101.
  • the wafer 105 is placed on the cooling device 104.
  • the heating light source 102 radiates heat to the wafer 105 through the transparent medium window 103 to heat the wafer 105; after the heating is completed, the cooling device 104 is turned on to cool the wafer 105.
  • the degassing chamber shown in Figure 1 has the following problems:
  • the surface temperature of the wafer 105 cannot be directly obtained, and can only be measured indirectly through prior experiments before the formal heating, so it is not easy to find that the surface temperature of the wafer 105 varies with the gas chamber 101. Changes in internal conditions can lead to poor temperature accuracy of the wafer.
  • the wafer 105 will volatilize substances, and the volatilized substances will be deposited on the transparent medium window 103 and block a part of the heat transfer, thereby reducing the heating efficiency.
  • the temperature of the transparent medium window 103 will increase due to the irradiation of the heating light source 102, and the transparent medium window 103 will still radiate heat to the wafer 105 during the cooling process, resulting in a decrease in cooling efficiency.
  • Figure 2 shows another degassing chamber.
  • the heating device 202 is disposed in the chamber 201 to heat the wafer 203.
  • the degassing chamber shown in FIG. 2 can only heat the wafer and does not have a cooling function. Therefore, the wafer 203 needs to be transferred to other equipment for cooling, which results in low production efficiency.
  • a degassing chamber is provided.
  • the degassing chamber is provided with a heating device, a cooling device and a moving support device inside.
  • the cooling device is spaced apart from the heating device and is oppositely disposed; the mobile support device is used to carry the wafer and can drive the wafer to move between the heating device and the cooling device to heat and cool the wafer respectively.
  • both the heating device and the cooling device are located in the degassing chamber, and the wafer is moved between the cooling device and the heating device of the heating device by moving the supporting device, and the wafer can be heated and cooled separately, Therefore, the heating process and the cooling process can be completed in the same chamber, thereby improving production efficiency.
  • the heating device can be radiated to the wafer directly and at a short distance without having to pass through the heating device and the wafer. Isolate the components from the vacuum environment and the atmospheric environment (for example, the dielectric window 103 shown in FIG. 1), so that the wafer temperature accuracy caused by the presence of the dielectric window 103 in the degassing chamber shown in FIG. 1 may be poor. , Low heating efficiency, low cooling efficiency, etc.
  • FIG. 3 (a) illustrates a degassing chamber according to an embodiment of the present disclosure.
  • a heating device 20, a cooling device 30, and a moving support device 80 are provided inside the degassing chamber 10 according to an embodiment of the present disclosure.
  • the cooling device 30 is spaced apart from the heating device 20 and is disposed opposite to each other; the mobile support device 80 is used to carry the wafer 50 and can drive the wafer 50 to move between the heating device 20 and the cooling device 30 so as to separate the wafer 50 Perform heating and cooling.
  • Both the heating device 20 and the cooling device 30 are located inside the degassing chamber 10, and the wafer 50 is moved between the cooling device 30 and the heating device 20 by the moving support device 80, so that the wafer 50 can be heated and cooled respectively, so that the wafer 50 can be heated and cooled.
  • the heating process and the cooling process are completed in the same degassing chamber 10, thereby improving production efficiency.
  • the heating device 20 can be radiated to the wafer directly and at a short distance without having to pass through the isolation between the heating device 20 and the wafer 50.
  • the components of the vacuum environment and the atmospheric environment for example, the dielectric window 103 shown in FIG. 1), so that the wafer temperature accuracy in the degassing chamber shown in FIG. 1 due to the presence of the dielectric window 103 is poor, Problems such as low heating efficiency and low cooling efficiency.
  • FIG. 3 (b) shows a schematic cross-sectional view of a heating plate of a heating device provided in a degassing chamber according to an embodiment of the present disclosure.
  • the heating device 20 includes a heating plate 20 ', and a heating element 21 is provided in the heating plate 20'. And, in a direction from the center of the heating plate 20 'to the edge of the heating plate 20', the arrangement density of the heating elements 21 gradually increases.
  • the heating plate 20 'as a disc-shaped structure can realize a wide range of surface heating, and on the other hand, by setting the arrangement density of the heating elements 21 as above, the edge and center of the heating plate 20' can be compensated The difference in the speed of heat loss between; therefore, the temperature uniformity during heating is further improved.
  • the heating element 21 includes a heating wire that is wound into a planar spiral structure around the axis of the heating plate 20 '(that is, the axis O-O' shown in FIG. 3 (b)), and is heated along the In the direction from the center of the plate 20 'to the edge of the heating plate 20', the distance between the adjacent two turns of the heating wire gradually decreases.
  • the structure, cross-sectional shape, and number of the heating elements 21 are all exemplary, and the embodiments of the present disclosure are not limited thereto. In practical applications, The structure, cross-sectional shape, and number of the heating elements 21 are selected according to actual needs.
  • the embodiment of the present disclosure does not limit the specific shape of the degassing chamber 10 as long as the degassing chamber 10 can accommodate the heating device 10 and the cooling device 20.
  • the surface of the heating plate 20 'facing the wafer 50 is flat, so that the heating plate 20' can be a surface heating source having excellent uniformity.
  • the area of the surface of the heating pan 20 'facing the wafer 50 is greater than or equal to the surface area of the wafer 50 to ensure heating efficiency and heating uniformity.
  • the surface of the heating plate 20 'facing the wafer 50 and the surface of the heating plate 20' away from the wafer 50 are both flat.
  • the cooling device 30 includes a cooling plate 30 ', and a wafer cooling channel (not shown in the figure) for conveying a cooling medium is provided in the cooling plate 30' to align the wafers. 50 for cooling.
  • the cooling medium may be cooling water, a cooling liquid, liquid nitrogen, or the like.
  • the cooling plate 30 'facing the wafer 50 is flat, so that the cooling plate 30' can be a surface cooling source with excellent uniformity.
  • the area of the surface of the cooling tray 30 'facing the wafer 50 is greater than or equal to the surface area of the wafer 50 to ensure cooling efficiency and uniformity.
  • the surface of the cooling pan 30 'facing the wafer 50 and the surface of the cooling pan 30' away from the wafer 50 are both flat.
  • the heating plate 20 ' is fixed on the top wall of the degassing chamber 10 and the cooling plate 30' is fixed on the bottom wall of the degassing chamber 10, that is, the heating plate 20 ' And the cooling plate 30 'are arranged in a vertical direction, and the heating plate 20' is located above the cooling plate 30 '; in this way, the moving support device 80 can make the wafer close to the heating plate 20' or the cooling plate 30 'by lifting movement, Thereby, the heating and cooling of the wafers can be realized more conveniently.
  • the embodiments of the present disclosure are not limited thereto, and other settings may be made for the positional relationship between the cooling plate 30 'and the heating plate 20' as needed.
  • the heating plate 20 ′ is fixed to the top wall of the degassing chamber 10 through a first connection member 61
  • the cooling plate 30 ′ is fixed to the degassing chamber 10 through a second connection member 62.
  • the first connection member 61 and the second connection member 62 do not place any restrictions on the structure of the first connection member 61 and the second connection member 62 as long as the first connection member 61 can stably fix the heating plate 20 ′ to the top wall of the degassing chamber 10 and the first The two connecting members 62 can steadily fix the cooling plate 30 ′ to the bottom wall of the degassing chamber 10.
  • the wafer 50 is any wafer that needs to be degassed, such as a silicon wafer, which is not limited in the embodiment of the present disclosure.
  • the wafer 50 includes a substrate and a film layer or pattern formed on the substrate.
  • the wafer 50 includes only a substrate, and there is no other film layer or pattern on the substrate.
  • the surface of the wafer 50 on which the film layer or pattern is formed or the surface on which the film layer or pattern is to be formed subsequently faces upward, that is, faces the heating device 20.
  • the degassing chamber 10 further includes a shield, which is movable.
  • FIGS. 4 (a) and 4 (b) and FIGS. 5 (a) and 5 (b) respectively show a degassing chamber according to an embodiment of the present disclosure, in which FIGS. 4 (a) and 5 (a) shows the position of the shielding member 40 in the heating state, and Figs. 4 (b) and 5 (b) show the position of the shielding member 40 in the cooling state, and Figs. 4 (a) and 4 (b) show The shielding member shown is different in structure from the shielding member shown in FIGS. 5 (a) and 5 (b).
  • the degassing chamber 10 has a heating state and a cooling state.
  • the heating state the moving support device 80 moves the wafer 50 to a heating position capable of being heated by the heating device 20 (FIG. 4 (a) And the position of the wafer 50 shown in FIG. 5 (a)); in the cooling state, the moving support device 80 drives the wafer 50 to a cooling position capable of being cooled by the cooling device 30 (FIG. 4 (b) and FIG. 5 (b) shows the location of the wafer 50).
  • the shielding member 40 can be moved to a first position where the wafer 50 is exposed to the heating plate 20 ', as shown in FIG. 4 (a) and FIG. 5 (a). The shielding member 40 is located. At this time, the shielding member 40 will not shield the heat radiated from the heating plate 20 'toward the wafer 50.
  • the shielding member 40 can be moved between the heating plate 20 'and the wafer 50 to cover the second position of the wafer 50, as shown in Figs. 4 (b) and 5 (b). Where the shield 40 is shown. In this way, when the cooling process is performed, the shielding member 40 can block the heating device 20 from radiating heat to the wafer 50.
  • the wafer 50 and the heating plate 20 ' are in direct contact.
  • the wafer 50 and the heating plate 20 ' are close to each other without directly contacting each other, that is, the two surfaces of the wafer 50 and the heating plate 20' have a predetermined distance therebetween.
  • the preset distance ranges from 0.05 mm to 0.15 mm, and further, for example, about 0.1 mm.
  • the wafer 50 can be sufficiently close to the heating plate 20 ′ to be sufficiently heated, and it can not prevent the vaporization of water vapor or other volatile substances in the wafer 50, and a pattern can be formed on the surface of the wafer 50. In this case, it is possible to prevent these patterns from being directly contacted with the heating plate 20 'and being damaged.
  • the orthographic projection of the shielding member 40 on the heating plate 20 ' completely covers the heating plate 20', so that the shielding member 40 can completely cover the heating plate 20 'to effectively prevent the In the cooling process, the heating device 20 radiates heat to the wafer 50.
  • the wafer 50 when the wafer 50 is located at the above-mentioned cooling position, the wafer 50 is placed on the cooling plate 30 'of the cooling device 30, that is, in direct contact with the cooling plate 30'. In this way, cooling efficiency and cooling uniformity can be improved.
  • the shield 40 may be formed of a material capable of reducing heat transmission.
  • Stainless steel is commonly used to make various production equipment, such as degassing chambers according to embodiments of the present disclosure.
  • the shield 40 is also formed of stainless steel to simplify material selection and material storage procedures, thereby simplifying the manufacturing process.
  • the shield 40 may be formed of a heat-insulating material, such as a heat-reflective material, a heat-insulating material, and the like.
  • the heat-reflective material is, for example, a plate plated with a highly reflective metal layer on the surface.
  • the thermal insulating material is, for example, a thermal insulating resin.
  • the thermal insulation resin is, for example, a phenol resin, a polyurethane resin, or the like.
  • the shield 40 is rigid, and the degassing chamber 10 includes a protective cover 41 communicating with the inside thereof.
  • the shielding member 40 is located in the first position, the shielding member 40 is placed in the protective cover 41.
  • the protective cover 41 is formed integrally with the degassing chamber 10.
  • the protective cover 41 is formed separately from the degassing chamber 10 and is connected together by a connecting member such as a bolt.
  • the degassing chamber 10 further includes a rotation driving mechanism for driving the shielding member 40 between the first position and the second position. Between rotations.
  • the rotation driving mechanism includes a rotation link 42 and a rotation motor 43, wherein the rotation link 42 is vertically disposed on a side of the shielding member 40 near the protective cover 41 and is connected to the shielding member 40 and the rotation motor 43 respectively;
  • the motor 43 is used to drive the rotary link 42 to rotate around its axis.
  • the rotating link 42 drives the shielding member 40 to rotate to the first position moved into the protective cover 41 or to move out of the protective cover 41 to the second position.
  • the mechanism for moving the shielding member 40 is not limited to the rotating link 42 and the driving motor 43 described above, and any driving of the shielding member 40 between the shielding member 40 between the first position and the second position Institutions belong to the protection scope of the embodiments of the present disclosure.
  • the covering member 40 is foldable or stretchable, that is, the covering member 40 is capable of switching between a folded state and an extended state.
  • the shielding member 40 can be folded and moved to the first position, that is, the shielding member 40 is in a folded state to expose the wafer 50 to the heating plate 20 ';
  • the shielding member 40 can be extended and moved to the second position, that is, the shielding member 40 is in an extended state to shield the wafer 50 between the heating plate 20 ′ and the wafer 50.
  • the heating device 20 further includes a line 22 connected to the heating element 21.
  • the heating element 21 includes a resistance heating element (for example, a heating wire), and in this case, the wiring 22 connected to the heating element 21 is an electric wire that transmits a current to the resistance heating element.
  • the heating element 21 includes a liquid heating element.
  • the line 22 connected to the heating element 21 is an infusion tube that transmits a high-temperature liquid to the liquid heating element.
  • the first connection member 61 is hollow, and the line 22 connected to the heating element 21 passes through the first connection member. 61 and is directed outside the degassing chamber 10.
  • the first connection member 61 has the function of fixing the heating plate 20 'and the guide line 22, and the structure of the degassing chamber 10 can be simplified.
  • the first connection member 61 can isolate the internal environment of the degassing chamber 10 from the external atmospheric environment.
  • the heating device 20 further includes a temperature measuring element 23 and a lead wire 24 connected to the temperature measuring element 23.
  • the temperature measuring element 23 is a thermocouple.
  • the heating device 20 includes a temperature measuring element 23 so that the temperature of the heating plate 20 'can be monitored in real time to facilitate real-time and accurate control of the heating temperature.
  • the lead wire 24 connected to the temperature measuring element 23 is guided to the degassing chamber through the first connection member 61 Outside the chamber 10 to simplify the structure of the degassing chamber 10.
  • the cooling tray 30 ' is provided with a wafer cooling channel 31 for conveying a cooling medium
  • the cooling device 30 is also The circuit 32 is connected to the wafer cooling channel 31.
  • the cooling medium may be cooling water, a cooling liquid, liquid nitrogen, or the like.
  • the line 32 connected to the wafer cooling passage 31 is a conveying pipe that transmits a cooling medium to the wafer cooling passage 31.
  • the second connecting member 62 is hollow, and the line 32 connected to the wafer cooling channel member 31 passes through the first The two connectors 62 are guided outside the degassing chamber 10.
  • the second connecting member 62 has both the function of fixing the cooling plate 30 'and the guide line 32, and the structure of the degassing chamber 10 can be simplified.
  • the second connecting member 62 can isolate the internal environment of the degassing chamber 10 from the external atmospheric environment.
  • FIG. 6 illustrates a chamber wall of the degassing chamber 10 according to an embodiment of the present disclosure, wherein the internal structure of the chamber is omitted in FIG. 6 for convenience.
  • the degassing chamber 10 is divided into upper and lower parts 12 and 13, and the chamber walls corresponding to the two parts 12 and 13 are separately manufactured, and then connected by a connection member such as a screw. connected.
  • a cavity cooling channel 70 for conveying a cooling medium is provided in the cavity wall of the cavity to prevent the temperature of the cavity wall from increasing due to the heat radiation of the heating device 20, thereby preventing the seal ring from being deformed by heat.
  • the cavity cooling channel 70 is different from and independent of the cooling device 30.
  • a chamber cooling channel 70 is provided at the top wall of the degassing chamber 10.
  • the chamber cooling channel 70 may be provided in the entire chamber wall to better prevent the temperature of the chamber wall from increasing due to the heat radiation of the heating device 20.
  • a cavity cooling channel 70 is provided in the upper wall, the lower wall, and the side wall of the degassing chamber 10.
  • the chamber cooling channel 70 is used to convey a cooling medium including cooling water, a cooling liquid, liquid nitrogen, and the like.
  • the mobile support device 80 includes at least three support pins 81 and a lifting drive mechanism, wherein at least three support pins 81 are vertically passed through the cooling plate 30 ', and are used to support the supporting wafer 50 between the heating plate 20' and the cooling plate 30 'together.
  • the support pin 81 passes through the cooling plate 30 'and rises to carry the wafer 50 to the above-mentioned heating position, such as a position near the heating plate 20' or a position in contact with the heating plate 20 '.
  • the support pin 81 is lowered to carry the wafer 50 to the above-mentioned cooling position, such as a position near the cooling plate 30 'or to place the wafer 50 on the cooling plate 30'.
  • the mobile support device 80 further includes: a lifting link 83 fixedly connected to the support pin 81; and a lifting motor 84 , To drive the lifting link 83 to rise or fall.
  • the elevating motor 84 drives the elevating link 83 to ascend or descend, and the elevating link 83 synchronously drives at least three supporting pins 81 to ascend or descend, so that the supporting pins 81 can transport the wafer 50 to a desired process position.
  • the support device further includes a plate-shaped support needle tray 82, the support needle 81 is fixed on the upper surface of the support needle tray 82, and the lifting link 83 is connected to the lower surface of the support needle tray 82.
  • the plate-shaped support needle tray 82 By adopting the plate-shaped support needle tray 82, the movement of the support needle 81 can be made more stable and a plurality of support needles 81 can be conveniently provided.
  • the degassing chamber 10 has a valve 11 and the degassing chamber 10 is an airtight chamber after the valve 11 is closed room.
  • the valve 11 is opened, and the wafer 50 is moved into or out of the degassing chamber 10.
  • the valve 11 is closed, and the wafer 50 is heated and cooled.
  • the degassing chamber may further include a vacuum system 90, a vacuum gauge 91, an air intake system 92, and the like connected to the degassing chamber 10, and details are not described herein again.
  • a degassing method is also provided, which is performed in the degassing chamber 10 according to the embodiment of the present disclosure as described above.
  • the degassing method according to an embodiment of the present disclosure includes:
  • the moving support device 80 is used to carry the wafer 50, and the wafer 50 is moved to a heating position capable of being heated by the heating device 20 to heat the wafer 50;
  • the moving support device 80 is used to move the wafer 50 to a cooling position capable of being cooled by the cooling device 30 to cool the wafer 50.
  • the moving support device 80 is used to drive the wafer 50 between the cooling device 30 and the heating device 20 in the degassing chamber 10 so that the wafer 50 can be in the same degassing chamber 10 Complete the heating process and cooling process to improve production efficiency.
  • the heating device 20 can directly and closely radiate heat to the wafer 50 without passing through a component (for example, as shown in FIG. 1) provided between the heating device 20 and the wafer 50 for isolating the vacuum environment from the atmospheric environment. Media window 103), thereby avoiding problems such as poor wafer temperature accuracy, low heating efficiency, and low cooling efficiency caused by the presence of the dielectric window 103 in the degassing chamber shown in FIG. 1.
  • the degassing chamber includes a shield 40 that is movable; and the degassing method further includes:
  • the shielding member 40 is moved to the first position where the wafer 50 is exposed to the heating device 20;
  • the shielding member 40 is moved between the heating device 20 and the wafer 50 to cover the second position of the wafer 50.
  • one example of the degassing method is as follows.
  • the valve 11 is opened, the wafer 50 is moved into the degassing chamber 10 and placed on the support pin 81, and the shield 40 is moved into the protective cover 41 or folded;
  • the valve 11 is closed, and the degassing chamber 10 is evacuated to a vacuum using the vacuum system 90 State;
  • the air inlet system 92 passes inert gas (for example, N2, Ar, etc.) into the degassing chamber 10, and the support pin 81 transports the wafer 50 to a position close to the heating plate 20 ', turns on the heating device 20, and passes the wafer 50 for heating.
  • inert gas for example, N2, Ar, etc.
  • the temperature of the heating plate 20 ' can be monitored by the temperature measuring element 23 and the temperature of the heating plate 20' can be adjusted in real time according to the monitoring result.
  • the vacuum system 90 will remove the The inert gas is exhausted, the intake system 92 re-injects the inert gas (for example, N2, Ar, etc.) into the degassing chamber 10, the support pin 81 is lowered to place the wafer 50 on the cooling tray 30 ', and the shield 40 is moved Between the heating plate 20 'and the wafer 50, the cooling device 30 is turned on and the wafer 50 is cooled; after the cooling is completed, the wafer 50 is removed from the chamber.
  • the degassing method according to the embodiment of the present disclosure is not limited to the above examples.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

本发明公开一种去气腔室以及去气方法。该去气腔室的内部设有加热装置、冷却装置和移动支撑装置；其中，冷却装置与加热装置间隔，且相对设置；移动支撑装置用于承载晶圆，且能够带动晶圆在加热装置和冷却装置之间移动，以分别对晶圆进行加热和冷却。本发明公开的去气腔室以及去气方法的技术方案，可以在同一腔室内完成加热工艺和冷却工艺，进而提高了生产效率。同时，可以避免去气腔室中由于介质窗的存在而带来的晶圆温度精度较差、加热效率低、冷却效率低等的问题。

Description

去气腔室以及去气方法 技术领域
本公开的实施例涉及一种去气腔室以及去气方法。
背景技术
在晶圆的加工过程中，通常需要对晶圆进行加热和冷却。例如，在去气工艺中，首先将晶圆加热到一定温度以去除水蒸气和其他挥发性物质，然后再将晶圆冷却到室温以方便进行后续工艺。
发明内容
根据本公开的实施例，提供一种去气腔室。所述去气腔室的内部设有加热装置、冷却装置和移动支撑装置；其中，
所述冷却装置与所述加热装置间隔，且相对设置；
所述移动支撑装置用于承载晶圆，且能够带动所述晶圆在所述加热装置和所述冷却装置之间移动，以分别对所述晶圆进行加热和冷却。
例如，还包括遮蔽件，所述遮蔽件是可移动的，且在所述移动支撑装置带动所述晶圆移动至能够被所述加热装置加热的加热位置时，所述遮蔽件能够移动至使所述晶圆暴露于所述加热装置的第一位置；在所述移动支撑装置带动所述晶圆移动至能够被所述冷却装置冷却的冷却位置时，所述遮蔽件能够移动至所述加热装置与所述晶圆之间，以遮挡所述晶圆的第二位置。
例如，还包括与所述去气腔室的内部连通的保护罩，所述遮蔽件在位于所述第一位置时，置于所述保护罩中。
例如，还包括旋转驱动机构，用于驱动所述遮蔽件在所述第一位置与所述第二位置之间转动。
例如，所述旋转驱动机构包括旋转连杆和旋转电机，其中，
所述旋转连杆竖直设置在所述遮蔽件的靠近所述保护罩的一侧，且分别与所述遮蔽件和所述旋转电机连接；
所述旋转电机用于驱动所述旋转连杆围绕所述旋转连杆的轴线转动。
例如，所述遮蔽件是可折叠或伸展的，且在所述移动支撑装置带动所述晶圆移动至所述加热位置时，所述遮蔽件能够折叠移动至所述第一位置；在所述移动支撑装置带动所述晶圆移动至所述冷却位置时，所述遮蔽件能够伸展移动至所述第二位置。
例如，所述加热装置包括加热盘，且在所述加热盘中设置有加热元件；并且，沿从所述加热盘的中心到所述加热盘的边缘的方向，所述加热元件的排布密度逐渐增加。
例如，所述加热元件包括加热丝，所述加热丝围绕所述加热盘的轴线缠绕成平面螺旋结构，且沿从所述加热盘的中心到所述加热盘的边缘的方向，相邻的两匝加热丝之间的间距逐渐减小。
根据本公开的实施例，在所述晶圆位于所述加热位置时，所述晶圆与所述加热盘相对的两个表面之间具有预设间距。
例如，所述预设间距的取值范围在0.05mm-0.15mm。
例如，所述冷却装置包括冷却盘，且在所述冷却盘中设置有用于输送冷却介质的晶圆冷却通道。
例如，所述加热装置和所述冷却装置沿竖直方向设置，且所述加热装置位于所述冷却装置的上方。
例如，所述移动支撑装置包括至少三个支撑针和升降驱动机构，其中，
所述至少三个支撑柱均竖直穿设于所述冷却装置，用于共同将所述晶圆支撑在所述加热装置与所述冷却装置之间；
所述升降驱动机构用于驱动所述至少三个支撑柱上升或下降。
例如，至少在所述去气腔室的靠近所述加热装置的腔室壁中设置有用于输送冷却介质的腔室冷却通道。
根据本公开的实施例，还提供一种去气方法，其在本公开的实施例提供的去气腔室内进行，所述方法包括：
采用所述移动支撑装置承载晶圆，且将所述晶圆移动至能够被所述加热装置加热的加热位置，以对所述晶圆进行加热；
采用所述移动支撑装置将所述晶圆移动至能够被所述冷却装置冷却的冷却位置，以对所述晶圆进行冷却。
例如，所述去气腔室包括遮蔽件，所述遮蔽件是可移动的；并且
所述方法进一步包括：
在所述移动支撑装置带动所述晶圆移动至所述加热位置时，将所述遮蔽件移动至使所述晶圆暴露于所述加热装置的第一位置；
在所述移动支撑装置带动所述晶圆移动至所述冷却位置时，将所述遮蔽件移动至所述加热装置与所述晶圆之间，以遮挡所述晶圆的第二位置。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1示出了根据一种技术的去气腔室；
图2示出了根据一种技术的加热腔室；
图3(a)示出了根据本公开实施例的去气腔室；
图3(b)示出了设置在根据本公开实施例的去气腔室中的加热装置的加热盘的截面示意图；
图4(a)和图4(b)分别示出了根据本公开实施例的去气腔室，其中 图4(a)为加热状态下的示意图，图4(b)为冷却状态下的示意图；
图5(a)和图5(b)分别示出了根据本公开实施例的去气腔室，其中图5(a)为加热状态下的示意图，图5(b)为冷却状态下的示意图；以及
图6示出了根据本公开实施例的去气腔室的腔室壁。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
图1示出了一种去气腔室。请参阅图1，去气腔室101具有透明介质窗103，在去气腔室101外部且靠近透明介质窗10的位置处设置有加热光源102，在去气腔室101内部设置有冷却装置104，晶圆105放置在冷却装置104上。在加热过程中，加热光源102透过透明介质窗103向晶圆105辐射热量，以对晶圆105进行加热；在加热完成之后，开启冷却装置104以对晶圆105 进行冷却。
图1所示的去气腔室存在以下问题：
其一，在加热的过程中，晶圆105的表面温度无法直接获得，只能在进行正式的加热之前，通过事先实验间接测得，因此不容易发现晶圆105表面温度随去气腔室101内部条件变化而变化的情况，从而导致晶圆的温度精度较差。
其二，在加热过程中晶圆105会挥发出物质，挥发出的物质会沉积在透明介质窗103上并阻挡一部分热量传递，从而降低了加热效率。
其三，透明介质窗103会由于加热光源102的照射而温度升高，而在冷却过程中透明介质窗103仍然会向晶圆105辐射热量，导致冷却效率降低。
图2示出了另一种去气腔室。请参阅图2，加热装置202设置在腔室201内以对晶圆203进行加热。但是，图2所示的去气腔室只能对晶圆进行加热，而不具有冷却功能，因此，需要将晶圆203转移到其他设备才能进行冷却，从而导致生产效率低下。
为了解决上述问题，根据本公开的实施例，提供一种去气腔室。该去气腔室的内部设有加热装置、冷却装置和移动支撑装置。其中，冷却装置与加热装置间隔，且相对设置；移动支撑装置用于承载晶圆，且能够带动晶圆在加热装置和冷却装置之间移动，以分别对晶圆进行加热和冷却。
根据本公开的实施例，加热装置和冷却装置均位于去气腔室内，并且借助移动支撑装置带动晶圆在冷却装置和加热装置的加热装置之间移动，可以分别对晶圆进行加热和冷却，从而可以在同一腔室内完成加热工艺和冷却工艺，进而提高了生产效率。
另外，根据本公开的实施例，通过将加热装置设置在腔室内部，可以使加热装置直接，且近距离向晶圆辐射热量，而无需透过设置在加热装置和晶圆之间的用于隔离真空环境与大气环境的部件(例如，图1所示的介质窗 103)，从而可以避免图1所示的去气腔室中由于介质窗103的存在而带来的晶圆温度精度较差、加热效率低、冷却效率低等的问题。
下面，将结合附图对根据本公开实施例的去气腔室进行详细的说明。图3(a)示出了根据本公开实施例的去气腔室。如图3(a)所示，根据本公开实施例的去气腔室10的内部设有加热装置20、冷却装置30和移动支撑装置80。其中，冷却装置30与加热装置20间隔，且相对设置；移动支撑装置80用于承载晶圆50，且能够带动晶圆50在加热装置20和冷却装置30之间移动，以分别对晶圆50进行加热和冷却。
加热装置20和冷却装置30均位于去气腔室10内部，并且借助移动支撑装置80带动晶圆50在冷却装置30和加热装置20之间移动，分别对晶圆50进行加热和冷却，从而可以在同一去气腔室10内完成加热工艺和冷却工艺，进而提高了生产效率。另外，通过将加热装置20设置在去气腔室10内部，可以使加热装置20直接，且近距离向晶圆辐射热量，而无需透过设置加热装置20和晶圆50之间的用于隔离真空环境与大气环境的部件(例如，图1所示的介质窗103)，从而可以避免图1所示的去气腔室中由于介质窗103的存在而带来的晶圆温度精度较差、加热效率低、冷却效率低等的问题。
图3(b)示出了设置在根据本公开实施例的去气腔室中的加热装置的加热盘的截面示意图。如图3(b)所示，根据本公开的实施例，加热装置20包括加热盘20’，且在加热盘20’中设有加热元件21。并且，沿从加热盘20’的中心到加热盘20’的边缘的方向，加热元件21的排布密度逐渐增加。在此情形下，一方面，加热盘20’作为盘状结构可以实现较大范围的面加热，另一方面，通过对加热元件21的排布密度进行如上设置可以补偿加热盘20’边缘与中心之间的热量散失速度差异；因此，进一步提高了加热过程中的温度均匀性。
在本实施例中，加热元件21包括加热丝，该加热丝围绕加热盘20’的 轴线(即，图3(b)示出的轴线O-O’)缠绕成平面螺旋结构，且沿从加热盘20’的中心到加热盘20’的边缘的方向，相邻的两匝加热丝之间的间距逐渐减小。需要说明的是，在图3(a)和图3(b)中，加热元件21的结构、截面形状和数量均是示例性的，本公开实施例不局限于此，在实际应用中，可以根据实际需要选择加热元件21的结构、截面形状和数量。
需要说明的是，本公开的实施例对去气腔室10的具体形状不进行任何限制，只要去气腔室10可以容纳加热装置10和冷却装置20即可。
例如，如图3(a)所示，对于加热盘20’而言，至少其面向晶圆50的表面为平面，从而加热盘20’可以成为均匀性优良的面加热源。例如，加热盘20’的面向晶圆50的表面的面积大于或等于晶圆50的表面面积，以确保加热效率和加热均匀性。例如，为了方便加工，加热盘20’的面向晶圆50的表面以及加热盘20’的远离晶圆50的表面均为平面。
例如，如图3(a)所示，冷却装置30包括冷却盘30’，且在冷却盘30’中设置有用于输送冷却介质的晶圆冷却通道(图中未示出)，以对晶圆50进行冷却。该冷却介质可以为冷却水、冷却液、液氮等。
例如，对于冷却盘30’而言，至少其面向晶圆50的表面为平面，从而冷却盘30’可以成为均匀性优良的面冷却源。例如，冷却盘30’的面向晶圆50的表面的面积大于或等于晶圆50的表面面积，以确保冷却效率和冷却均匀性。例如，为了方便加工，冷却盘30’的面向晶圆50的表面以及冷却盘30’的远离晶圆50的表面均为平面。
例如，如图3(a)所示，加热盘20’固定在去气腔室10的顶壁上并且冷却盘30’固定在去气腔室10的底壁上，也就是，加热盘20’和冷却盘30’沿竖直方向设置，且加热盘20’位于冷却盘30’的上方；这样，移动支撑装置80可以通过作升降运动来使晶圆靠近加热盘20’或冷却盘30’，从而可以更方便的实现分别对晶圆的加热和冷却。然而，本公开的实施例不限于此， 可以根据需要对冷却盘30’和加热盘20’之间的位置关系进行其他设置。
例如，如图3(a)所示，加热盘20’通过第一连接件61固定在去气腔室10的顶壁上，冷却盘30’通过第二连接件62固定在去气腔室10的底壁上。本公开的实施例对第一连接件61和第二连接件62的结构不进行任何限制，只要第一连接件61能够稳定地将加热盘20’固定到去气腔室10的顶壁且第二连接件62能够稳定地将冷却盘30’固定到去气腔室10的底壁即可。
例如，晶圆50为任何需要进行去气处理的晶圆，例如为硅晶圆，本公开实施例对此不进行限制。例如，晶圆50包括衬底以及形成在衬底上的膜层或图案。例如，晶圆50仅包括衬底，衬底上不具有其他膜层或图案。例如，在将晶圆50放置入去气腔室10时，晶圆50的形成有膜层或图案的表面或者后续需要形成膜层或图案的表面朝上，即朝向加热装置20。
根据本公开实施例的去气腔室10，还包括遮蔽件，其是可移动的。具体地，图4(a)和图4(b)以及图5(a)和图5(b)分别示出了根据本公开实施例的去气腔室，其中图4(a)和图5(a)示出了加热状态下遮蔽件40的位置，图4(b)和图5(b)示出了冷却状态下遮蔽件40的位置，图4(a)和图4(b)所示的遮蔽件在结构上不同于图5(a)和图5(b)所示的遮蔽件。
例如，根据本公开实施例的去气腔室10具有加热状态和冷却状态，在加热状态下，移动支撑装置80带动晶圆50移动至能够被加热装置20加热的加热位置(图4(a)和图5(a)示出的晶圆50所在的位置)；在冷却状态下，移动支撑装置80带动晶圆50移动至能够被冷却装置30冷却的冷却位置(图4(b)和图5(b)示出的晶圆50所在的位置)。
而且，在晶圆50位于上述加热位置时，遮蔽件40能够移动至使晶圆50暴露于加热盘20’的第一位置，即如图4(a)所示和图5(a)所示的遮蔽件40所在位置。此时遮蔽件40不会遮挡加热盘20’辐射向晶圆50的热量。
在晶圆50位于上述冷却位置时，遮蔽件40能够移动至加热盘20’与晶圆50之间，以遮挡晶圆50的第二位置，即如图4(b)和图5(b)所示的遮蔽件40所在位置。这样，在进行冷却工艺时，遮蔽件40能够阻挡加热装置20向晶圆50辐射热量。
例如，在晶圆50位于上述加热位置时，晶圆50和加热盘20’直接接触。或者，在晶圆50位于上述加热位置时，晶圆50与加热盘20’彼此靠近而不直接接触，即，晶圆50与加热盘20’相对的两个表面之间具有预设间距。例如，该预设间距的取值范围在0.05mm-0.15mm，进一步地例如约为0.1mm。这样一来，晶圆50既可以距离加热盘20’足够近而被充分加热，又可以不妨碍晶圆50中的水蒸气或其他挥发性物质的挥发，并且在晶圆50的表面形成有图案的情形下可以防止这些图案与加热盘20’直接接触而受到破坏。
例如，如图4(a)和图5(a)所示，在晶圆50位于上述加热位置时，晶圆50与加热盘20’之间不具有任何部件，来自加热盘20’的热量可以直接辐射向晶圆50。
例如，在晶圆50位于上述冷却位置时，遮蔽件40在加热盘20’上的正投影完全覆盖加热盘20’，这样一来遮蔽件40可以完全遮挡加热盘20’，以有效地防止在冷却工艺中加热装置20向晶圆50辐射热量。
例如，在晶圆50位于上述冷却位置时，晶圆50被放置在冷却装置30的冷却盘30’上，即与冷却盘30’直接接触。这样，可以提高冷却效率和冷却均匀性。
例如，遮蔽件40可以由能减少热量传播的材料形成。通常采用不锈钢来制造各种生产设备，诸如根据本公开实施例的去气腔室。例如，遮蔽件40也由不锈钢形成，以简化材料选择和材料储备工序，从而简化制造工艺。
例如，遮蔽件40可以由隔热材料形成，例如热反射材料、热绝缘材料等。热反射材料例如为表面镀有高反射率金属层的板材。热绝缘材料例如为 热绝缘树脂。热绝缘树脂例如为酚醛树脂、聚氨酯树脂等。
例如，如图4(a)和4(b)所示，遮蔽件40是刚性的，去气腔室10包括与其内部连通的保护罩41。例如，在遮蔽件40位于上述第一位置时，遮蔽件40置于保护罩41中。
例如，保护罩41与去气腔室10一体形成。例如，保护罩41与去气腔室10分开形成，并通过螺栓等连接件连接在一起。
例如，如图4(a)和4(b)所示，根据本公开实施例的去气腔室10还包括：旋转驱动机构，用于驱动遮蔽件40在上述第一位置与第二位置之间转动。
例如，旋转驱动机构包括旋转连杆42和旋转电机43，其中，旋转连杆42竖直设置在遮蔽件40的靠近保护罩41的一侧，且分别与遮蔽件40和旋转电机43连接；旋转电机43用于驱动旋转连杆42旋转围绕其轴线转动。在旋转电机43的驱动下，旋转连杆42带动遮蔽件40转动至移入保护罩41中的上述第一位置或者从保护罩41移出至上述第二位置。
需要说明的是，使遮蔽件40发生移动的机构并不限于如上所述的旋转连杆42和驱动电机43，任何使遮蔽件40在遮蔽件40在第一位置与第二位置之间的驱动机构都属于本公开实施例的保护范围。
例如，如图5(a)和5(b)所示，遮蔽件40是可折叠或伸展的，即，遮蔽件40是能够在折叠状态和伸展状态之间转换。而且，在晶圆50位于上述加热位置时，遮蔽件40能够折叠移动至上述第一位置，即，遮蔽件40处于折叠状态，以使晶圆50暴露于加热盘20’；在晶圆50位于上述冷却位置时，遮蔽件40能够伸展移动至上述第二位置，即，遮蔽件40处于伸展状态，以在加热盘20’与晶圆50之间遮挡晶圆50。
例如，如图4(a)和4(b)以及图5(a)和5(b)所示，加热装置20还包括与加热元件21连接的线路22。例如，加热元件21包括电阻加热元件 (例如，加热丝)，在此情形下，与加热元件21连接的线路22为向电阻加热元件传输电流的电线。例如，加热元件21包括液体加热元件，在此情形下，与加热元件21连接的线路22为向液体加热元件传输高温液体的输液管。
例如，如图4(a)和4(b)以及图5(a)和5(b)所示，第一连接件61是空心的，与加热元件21连接的线路22穿过第一连接件61而被引导到去气腔室10之外。在此情形下，第一连接件61兼具固定加热盘20’和引导线路22的作用，可以简化去气腔室10的结构。另外，第一连接件61可以将去气腔室10的内部环境与外部的大气环境隔离开。
例如，如图4(a)和4(b)以及图5(a)和5(b)所示，加热装置20还包括测温元件23和与测温元件23连接的引线24。例如，测温元件23为热电偶。加热装置20包括测温元件23，从而可以实时地对加热盘20’的温度进行监测，以利于实时且准确地控制加热温度。需要说明的是，图中仅在加热盘20’的中心位置设置了一个测温元件23；然而，本公开实施例不限于此，可以针对加热盘20’的不同位置设置多个测温元件23，并根据多个测温元件23的监测结果对加热盘20’的不同位置分别进行相应的温度调整，实现均匀加热。
例如，如图4(a)和4(b)以及图5(a)和5(b)所示，与测温元件23连接的引线24穿过第一连接件61而被引导到去气腔室10之外，以简化去气腔室10的结构。
例如，如图4(a)和4(b)以及图5(a)和5(b)所示，冷却盘30’中设置有用于输送冷却介质的晶圆冷却通道31，且冷却装置30还包括与晶圆冷却通道31连接的线路32。例如，冷却介质可以为冷却水、冷却液、液氮等。在此情形下，与晶圆冷却通道31连接的线路32为向晶圆冷却通道31传输冷却介质的输送管。
例如，如图4(a)和4(b)以及图5(a)和5(b)所示，第二连接件 62是空心的，与晶圆冷却通道件31连接的线路32穿过第二连接件62而被引导到去气腔室10之外。在此情形下，第二连接件62兼具固定冷却盘30’和引导线路32的作用，可以简化去气腔室10的结构。另外，第二连接件62可以将去气腔室10的内部环境与外部的大气环境隔离开。
为了方便去气腔室10的加工，通常需要将去气腔室10的腔室壁分成多个部分，该多个部分被分开制造，然而再通过连接件连接在一起。图6示出了根据本公开实施例的去气腔室10的腔室壁，其中在图6中为了方便省略了腔室的内部结构。例如，如图6所示，去气腔室10被分隔成上下两个部分12和13，与该两个部分12和13对应的腔室壁被分开制造，然后再通过诸如螺丝等的连接件连接在一起。
例如，在将去气腔室10的多个部分通过连接件连接在一起的过程中，需要配合连接件使用大量的密封胶圈，以使去气腔室10成为气密腔室。另外，在将去气腔室10与其他部件(例如，如上所述的保护罩10以及如下所述的真空系统90、真空测量仪91、进气系统92等)进行连接时也需要配合连接件使用大量的密封胶圈。然而，密封胶圈在受热的情形下容易变形，影响密封效果。因此，在根据本公开的实施例中，例如，如图4(a)和4(b)以及图5(a)和5(b)所示，至少在去气腔室10的靠近加热装置20的腔室壁中设置有用于输送冷却介质的腔室冷却通道70，以避免腔室壁由于加热装置20的热辐射而温度升高，从而避免密封胶圈受热变形。例如，该腔室冷却通道70不同于且独立于冷却装置30。例如，如图4(a)和4(b)以及图5(a)和5(b)所示，在去气腔室10的顶壁处设置腔室冷却通道70。或者，可以在整个腔室壁中腔室冷却通道70，以更好地避免腔室壁由于加热装置20的热辐射而温度升高。例如，如图6所示，在去气腔室10的上壁、下壁和侧壁中均设置了腔室冷却通道70。例如，腔室冷却通道70用于输送包括冷却水、冷却液、液氮等的冷却介质。
例如，如图4(a)和4(b)以及图5(a)和5(b)所示，移动支撑装置80包括至少三个支撑针81和升降驱动机构，其中，至少三个支撑针81均竖直穿设于冷却盘30’，用于共同将撑晶圆50支撑在加热盘20’与冷却盘30’之间。例如，在加热状态下，支撑针81穿过冷却盘30’并上升，以将晶圆50运送到上述加热位置，例如靠近加热盘20’的位置或者与加热盘20’接触的位置。例如，在冷却状态下，支撑针81下降，以将晶圆50运送到上述冷却位置，例如靠近冷却盘30’的位置或者将晶圆50放置到冷却盘30’上。
例如，如图4(a)和4(b)以及图5(a)和5(b)所示，移动支撑装置80还包括：升降连杆83，与支撑针81固定连接；以及升降电机84，驱动升降连杆83升高或下降。升降电机84驱动升降连杆83上升或下降，升降连杆83同步带动至少三个支撑针81上升或下降，从而支撑针81可以将晶圆50运送到所需的工艺位置。例如，支撑装置还包括板状的支撑针托盘82，支撑针81固定在支撑针托盘82的上表面，升降连杆83连接到支撑针托盘82的下表面。通过采用板状的支撑针托盘82，可以使支撑针81的运动更稳定并且可以方便地设置多个支撑针81。
例如，如图4(a)和4(b)以及图5(a)和5(b)所示，去气腔室10具有阀门11，在阀门11关闭之后去气腔室10为气密腔室。打开阀门11，晶圆50移入去气腔室10或从去气腔室10移出晶圆50。关闭阀门11，对晶圆50进行加热和冷却。
例如，根据需要，根据本公开实施例的去气腔室还可以包括与去气腔室10连接的真空系统90、真空测量仪91、进气系统92等，在此不再赘述。
根据本公开的实施例，还提供一种去气方法，该方法在如上所述的根据本公开实施例的去气腔室10内进行。例如，根据本公开实施例的去气方法包括：
采用移动支撑装置80承载晶圆50，且将晶圆50移动至能够被加热装置20加热的加热位置，以对晶圆50进行加热；
采用移动支撑装置80将晶圆50移动至能够被冷却装置30冷却的冷却位置，以对晶圆50进行冷却。
在根据本公开实施例的去气方法中，采用移动支撑装置80带动晶圆50在去气腔室10内的冷却装置30和加热装置20之间移动，从而可以在同一去气腔室10内完成加热工艺和冷却工艺，提高了生产效率。另外，加热装置20可以直接，且近距离向晶圆50辐射热量，而无需透过设置在加热装置20和晶圆50之间的用于隔离真空环境与大气环境的部件(例如，图1所示的介质窗103)，从而可以避免图1所示的去气腔室中由于介质窗103的存在而带来的晶圆温度精度较差、加热效率低、冷却效率低等的问题。
例如，去气腔室包括遮蔽件40，该遮蔽件40是可移动的；并且，所述去气方法进一步包括：
在移动支撑装置80带动晶圆50移动至加热位置时，将遮蔽件40移动至使晶圆50暴露于加热装置20的第一位置；
在移动支撑装置80带动晶圆50移动至冷却位置时，将遮蔽件40移动至加热装置20与晶圆50之间，以遮挡晶圆50的第二位置。
这样一来，可以保证加热效率和冷却效率。
例如，根据本公开实施例的去气方法的一个示例如下。打开阀门11，晶圆50移入去气腔室10并放置在支撑针81上，遮蔽件40移入保护罩41内或者被折叠；关闭阀门11，采用真空系统90将去气腔室10抽到真空状态；进气系统92向去气腔室10通入惰性气体(例如，N2、Ar等)，支撑针81将晶圆50运送到靠近加热盘20’的位置，开启加热装置20并对晶圆50进行加热，在加热的过程中可以通过测温元件23监测加热盘20’的温度并根据监测结果实时调整加热盘20’的温度；加热完毕之后，真空系统90将去气 腔室10内的惰性气体排出，进气系统92向去气腔室10重新通入惰性气体(例如，N2、Ar等)，支撑针81下降以将晶圆50放置到冷却盘30’上，遮蔽件40被移动到加热盘20’和晶圆50之间，开启冷却装置30并对晶圆50进行冷却；在冷却完毕之后，将晶圆50移出腔室。需要说明的是，根据本公开实施例的去气方法不局限于上述示例。
有以下几点需要说明：(1)在本公开实施例的附图中，只涉及到与本公开实施例相关的结构，其他结构可参考通常设计；(2)为了清晰起见，在用于描述本公开实施例的附图中，各部件并非按照实际比例绘制；(3)在不冲突的情况下，本公开实施例中的特征可以相互组合。
以上所述仅是本公开的示范性实施方式，而非用于限制本公开的保护范围，本公开的保护范围由所附的权利要求确定。

Claims (16)

  1. 一种去气腔室，其特征在于，所述去气腔室的内部设有加热装置、冷却装置和移动支撑装置；其中，
    所述冷却装置与所述加热装置间隔，且相对设置；
    所述移动支撑装置用于承载晶圆，且能够带动所述晶圆在所述加热装置和所述冷却装置之间移动，以分别对所述晶圆进行加热和冷却。
  2. 根据权利要求1所述的去气腔室，其特征在于，还包括遮蔽件，所述遮蔽件是可移动的，且在所述移动支撑装置带动所述晶圆移动至能够被所述加热装置加热的加热位置时，所述遮蔽件能够移动至使所述晶圆暴露于所述加热装置的第一位置；在所述移动支撑装置带动所述晶圆移动至能够被所述冷却装置冷却的冷却位置时，所述遮蔽件能够移动至所述加热装置与所述晶圆之间，以遮挡所述晶圆的第二位置。
  3. 根据权利要求2所述的去气腔室，其特征在于，还包括与所述去气腔室的内部连通的保护罩，所述遮蔽件在位于所述第一位置时，置于所述保护罩中。
  4. 根据权利要求2或3所述的去气腔室，其特征在于，还包括旋转驱动机构，用于驱动所述遮蔽件在所述第一位置与所述第二位置之间转动。
  5. 根据权利要求4所述的去气腔室，其特征在于，所述旋转驱动机构包括旋转连杆和旋转电机，其中，
    所述旋转连杆竖直设置在所述遮蔽件的靠近所述保护罩的一侧，且分别与所述遮蔽件和所述旋转电机连接；
    所述旋转电机用于驱动所述旋转连杆围绕所述旋转连杆的轴线转动。
  6. 根据权利要求2或3所述的去气腔室，其特征在于，所述遮蔽件是可折叠或伸展的，且在所述移动支撑装置带动所述晶圆移动至所述加热位置时，所述遮蔽件能够折叠移动至所述第一位置；在所述移动支撑装置带动所述晶圆移动至所述冷却位置时，所述遮蔽件能够伸展移动至所述第二位置。
  7. 根据权利要求1所述的去气腔室，其特征在于，所述加热装置包括加热盘，且在所述加热盘中设置有加热元件；并且，沿从所述加热盘的中心到所述加热盘的边缘的方向，所述加热元件的排布密度逐渐增加。
  8. 根据权利要求7所述的去气腔室，其特征在于，所述加热元件包括加热丝，所述加热丝围绕所述加热盘的轴线缠绕成平面螺旋结构，且沿从所述加热盘的中心到所述加热盘的边缘的方向，相邻的两匝加热丝之间的间距逐渐减小。
  9. 根据权利要求7所述的去气腔室，其特征在于，在所述晶圆位于所述加热位置时，所述晶圆与所述加热盘相对的两个表面之间具有预设间距。
  10. 根据权利要求9所述的去气腔室，其特征在于，所述预设间距的取值范围在0.05mm-0.15mm。
  11. 根据权利要求1所述的去气腔室，其特征在于，所述冷却装置包括冷却盘，且在所述冷却盘中设置有用于输送冷却介质的晶圆冷却通道。
  12. 根据权利要求1所述的去气腔室，其特征在于，所述加热装置和所述冷却装置沿竖直方向设置，且所述加热装置位于所述冷却装置的上方。
  13. 根据权利要求12所述的去气腔室，其特征在于，所述移动支撑装置包括至少三个支撑针和升降驱动机构，其中，
    所述至少三个支撑柱均竖直穿设于所述冷却装置，用于共同将所述晶圆支撑在所述加热装置与所述冷却装置之间；
    所述升降驱动机构用于驱动所述至少三个支撑柱上升或下降。
  14. 根据权利要求1所述的去气腔室，其特征在于，
    至少在所述去气腔室的靠近所述加热装置的腔室壁中设置有用于输送冷却介质的腔室冷却通道。
  15. 一种去气方法，其特征在于，在权利要求1-14任意一项所述的去气腔室内进行，所述方法包括：
    采用所述移动支撑装置承载晶圆，且将所述晶圆移动至能够被所述加热装置加热的加热位置，以对所述晶圆进行加热；
    采用所述移动支撑装置将所述晶圆移动至能够被所述冷却装置冷却的冷却位置，以对所述晶圆进行冷却。
  16. 根据权利要求15所述的去气方法，其特征在于，
    所述去气腔室包括遮蔽件，所述遮蔽件是可移动的；并且
    所述方法进一步包括：
    在所述移动支撑装置带动所述晶圆移动至所述加热位置时，将所述遮蔽件移动至使所述晶圆暴露于所述加热装置的第一位置；
    在所述移动支撑装置带动所述晶圆移动至所述冷却位置时，将所述遮蔽件移动至所述加热装置与所述晶圆之间，以遮挡所述晶圆的第二位置。
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