WO2019216262A1 - Procédé de fabrication de puce semi-conductrice - Google Patents

Procédé de fabrication de puce semi-conductrice Download PDF

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Publication number
WO2019216262A1
WO2019216262A1 PCT/JP2019/017875 JP2019017875W WO2019216262A1 WO 2019216262 A1 WO2019216262 A1 WO 2019216262A1 JP 2019017875 W JP2019017875 W JP 2019017875W WO 2019216262 A1 WO2019216262 A1 WO 2019216262A1
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WIPO (PCT)
Prior art keywords
pressure
sensitive adhesive
expandable
layer
adhesive layer
Prior art date
Application number
PCT/JP2019/017875
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English (en)
Japanese (ja)
Inventor
忠知 山田
真也 田久
Original Assignee
リンテック株式会社
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Publication date
Application filed by リンテック株式会社 filed Critical リンテック株式会社
Priority to CN201980030707.8A priority Critical patent/CN112088421A/zh
Priority to KR1020207031816A priority patent/KR20210006896A/ko
Priority to JP2020518271A priority patent/JP7241744B2/ja
Publication of WO2019216262A1 publication Critical patent/WO2019216262A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
    • C09J2301/124—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present on both sides of the carrier, e.g. double-sided adhesive tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/206—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer comprising non-adhesive protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support

Definitions

  • the present invention relates to a method for manufacturing a semiconductor chip.
  • a heat-peelable pressure-sensitive adhesive sheet having a heat-expandable pressure-sensitive adhesive layer containing heat-expandable particles is known as a pressure-sensitive adhesive sheet that can meet such requirements.
  • a thermally expandable adhesive layer is prepared by using a thermally expandable adhesive layer including thermally expandable microspheres on one side of a substrate and a heat-peelable double-sided adhesive sheet provided with an adhesive layer on the other side.
  • a method is disclosed in which an adherend such as a wafer is adhered to a support and an adherend such as a wafer is bonded to the other adhesive layer to process the adherend.
  • the smoothness of the adherend surface can be maintained during processing of the adherend, and after processing, the double-sided pressure-sensitive adhesive sheet is peeled off. The stress can be reduced, and it can be easily peeled without damaging the adherend.
  • the thermally expandable adhesive layer of the above double-sided pressure-sensitive adhesive sheet is attached to a support, and the adherend is attached to the other adhesive layer. Is processed.
  • the heat-expandable pressure-sensitive adhesive layer included in the double-sided pressure-sensitive adhesive sheet used in the processing method of Patent Document 1 contains heat-expandable microspheres
  • the support is more suitable than a pressure-sensitive adhesive layer that does not contain heat-expandable microspheres.
  • the decrease in the adhesive strength with the support causes various adverse effects due to the fact that the adherend is not sufficiently fixed to the support. For example, chip processing methods such as the tip dicing method and stealth dicing method, which grind the back surface of the wafer and divide it into chips, are not sufficiently fixed to the support, and the resulting chip has a bad edge. Can occur.
  • the adhesive resin constituting the thermally expandable adhesive layer In order to prevent contamination of the support, it may be possible to select a low-adhesive resin as the adhesive resin constituting the thermally expandable adhesive layer. At the time of processing the adherend, there may be a problem that the adherend is not sufficiently fixed to the adherend.
  • the present invention improves the yield by suppressing chipping of the end of the semiconductor chip, etc., and when separating the support and the attached adhesive sheet, it can be easily separated at once and the support after separation.
  • An object of the present invention is to provide a method for manufacturing a semiconductor chip, which can suppress contamination of the body and can eliminate the step of cleaning the support.
  • the present inventors respectively provide a first adhesive on both surfaces of a base material including at least an inflatable base material layer containing inflatable particles and a non-inflatable base material layer. It has been found that the above-mentioned problems can be solved by using an adhesive sheet having an adhesive layer and a second adhesive layer.
  • a substrate (Y) comprising at least an expandable substrate layer (Y1) containing expandable particles and a non-expandable substrate layer (Y2); On both surfaces of the substrate (Y), each has a first pressure-sensitive adhesive layer (X1) and a second pressure-sensitive adhesive layer (X2), A method for producing a semiconductor chip from a semiconductor wafer using a pressure-sensitive adhesive sheet, in which unevenness may occur on the pressure-sensitive adhesive surface of the first pressure-sensitive adhesive layer (X1) due to expansion of the expandable particles, A method for producing a semiconductor chip, comprising the following steps (1) to (3).
  • Step (1) A step of sticking the pressure-sensitive adhesive surface of the first pressure-sensitive adhesive layer (X1) to the hard support and sticking the pressure-sensitive adhesive surface of the second pressure-sensitive adhesive layer (X2) to the surface of the semiconductor wafer.
  • Step (2) A step of dividing the semiconductor wafer to obtain a plurality of semiconductor chips.
  • Step (3) The interface between the hard support and the first pressure-sensitive adhesive layer (X1) while the expandable particles are expanded and the plurality of semiconductor chips on the second pressure-sensitive adhesive layer (X2) are adhered. Separating with P.
  • the pressure-sensitive adhesive sheet has a first pressure-sensitive adhesive layer (X1) on the base material (Y) on the side of the expandable base material layer (Y1), and the base material (Y) has the non-expandable group.
  • the base material (Y) is a non-expandable base material provided on the expandable base material layer (Y1) and the first adhesive layer (X1) side of the expandable base material layer (Y1).
  • the storage elastic modulus E ′ of the non-expandable base layer (Y2-1) when the expandable particles expand is determined by the storage modulus of the non-expandable base layer (Y2-2) when the expandable particles expand.
  • the non-expandable base material layer (Y2) is present at a position farther from the first pressure-sensitive adhesive layer (X1) than the expandable base material layer (Y1).
  • the non-intumescent substrate layer (Y2) does not exist between the layer (Y1) and the first pressure-sensitive adhesive layer (X1),
  • the storage elastic modulus E ′ of the non-expandable base layer (Y2) when the expandable particles expand is the storage elastic modulus E of the expandable base layer (Y1) when the expandable particles expand.
  • Step (4) After separation from the hard support in Step (3), the back surface opposite to the circuit surface of the plurality of semiconductor chips is formed with a base film, an adhesive layer and / or an adhesive layer. A step of removing the pressure-sensitive adhesive sheet from the semiconductor chip after being attached to the transfer tape.
  • the semiconductor wafer having the modified region is ground on the back surface on which the circuit opposite to the circuit surface is not formed, and the semiconductor wafer is divided to obtain a plurality of semiconductor chips.
  • the method for manufacturing a semiconductor chip of the present invention when separating the support and the attached adhesive sheet while improving the yield by suppressing chipping or the like of the end portion of the obtained semiconductor chip, all at once. Since it can be easily separated, contamination of the support after separation can be suppressed, and the washing step of the support can be omitted, so that productivity can be improved.
  • FIG. 6 is a schematic cross-sectional view in steps (1) to (3) of the method for manufacturing a semiconductor chip of the present invention.
  • FIG. 6 is a schematic cross-sectional view in steps (4) to (6) of the method for manufacturing a semiconductor chip of the present invention.
  • the determination of whether the target layer is an “expandable layer” or “non-expandable layer” is performed after 3 minutes of processing for expansion, and before and after the processing. Judgment is made based on the volume change rate calculated from the equation.
  • Volume change rate (%) ⁇ (volume of the layer after treatment ⁇ volume of the layer before treatment) / volume of the layer before treatment ⁇ ⁇ 100 That is, if the volume resistivity is 5% by volume or more, it is determined that the layer is an “expandable layer”. If the volume change rate is less than 5% by volume, the layer is a “non-expandable layer”. It is judged that.
  • a heat treatment for 3 minutes may be performed at the expansion start temperature (t) of the thermally expandable particles. .
  • the “active ingredient” refers to a component excluding a diluent solvent among components contained in a target composition.
  • Mw mass average molecular weight
  • GPC gel permeation chromatography
  • (meth) acrylic acid indicates both “acrylic acid” and “methacrylic acid”, and the same applies to other similar terms.
  • the lower limit value and upper limit value which were described in steps can be combined independently, respectively.
  • the description “preferably 10 to 90, more preferably 30 to 60”, “preferable lower limit (10)” and “more preferable upper limit (60)” are combined to obtain “10 to 60”.
  • the semiconductor chip manufacturing method of the present invention includes at least an expandable base layer (Y1) and non-expandable base layer (Y2) containing expandable particles.
  • the first pressure-sensitive adhesive layer (X1) and the second pressure-sensitive adhesive layer (X2) are provided on both sides of the base material (Y) and the base material (Y), respectively.
  • This is a method for producing a semiconductor chip from a semiconductor wafer using a pressure-sensitive adhesive sheet in which irregularities can occur on the pressure-sensitive adhesive surface of the agent layer (X1).
  • the production method of the present invention includes the following steps (1) to (3).
  • Step (1) A step of sticking the pressure-sensitive adhesive surface of the first pressure-sensitive adhesive layer (X1) to the hard support and sticking the pressure-sensitive adhesive surface of the second pressure-sensitive adhesive layer (X2) to the surface of the semiconductor wafer.
  • Step (2) A step of dividing the semiconductor wafer to obtain a plurality of semiconductor chips.
  • Step (3) The interface between the hard support and the first pressure-sensitive adhesive layer (X1) while the expandable particles are expanded and the plurality of semiconductor chips on the second pressure-sensitive adhesive layer (X2) are adhered. Separating with P.
  • FIG. 1 is a schematic cross-sectional view of the pressure-sensitive adhesive sheet showing an example of the configuration of the pressure-sensitive adhesive sheet used in the production method of the present invention.
  • the pressure-sensitive adhesive sheet used in the production method of the present invention includes a base (Y) having at least an expandable base layer (Y1) and a non-expandable base layer (Y2) as shown in FIG.
  • the adhesive sheet 1a which has a 1st adhesive layer (X1) and a 2nd adhesive layer (X2) on both surfaces of a material (Y), respectively is mentioned.
  • the substrate (Y) may have a configuration other than this.
  • the first non-thermally expandable base material layer (Y2-1) and the 2 A configuration in which a non-thermally expandable base material layer (Y2-2) is provided may be employed.
  • a release material may be further laminated on the pressure-sensitive adhesive surface of the first pressure-sensitive adhesive layer (X1) and the pressure-sensitive adhesive surface of the second pressure-sensitive adhesive layer (X2).
  • a structure in which a release material having a release treatment applied to both sides is laminated on one adhesive surface of the first adhesive layer (X1) and the second adhesive layer (X2) is wound in a roll shape. It is good.
  • These release materials are provided to protect the adhesive surfaces of the first adhesive layer (X1) and the second adhesive layer (X2), and are removed when the adhesive sheet is used.
  • the peeling force when peeling the release material laminated on the first pressure-sensitive adhesive layer (X1) and the second pressure-sensitive adhesive layer (X2) are laminated.
  • the adhesive sheet 1a is divided along with the two release materials and peeled off by pulling both release materials outward. This may cause a negative effect.
  • the release material laminated on the first pressure-sensitive adhesive layer (X1) and the release material laminated on the second pressure-sensitive adhesive layer (X2) have different peeling forces from the pressure-sensitive adhesive layer attached to each other. It is preferable to use two types of designed release materials.
  • the pressure-sensitive adhesive sheet used in the production method of the present invention is adjusted so that irregularities can be generated on the pressure-sensitive adhesive surface of the first pressure-sensitive adhesive layer (X1) by the expansion of the expandable particles.
  • the first pressure-sensitive adhesive layer (X1) is laminated on the expandable base material layer (Y1) containing expandable particles, and the non-expandable base material layer (Y2).
  • a second pressure-sensitive adhesive layer (X2) In the pressure-sensitive adhesive sheet 1a, when the expandable particles in the expandable base material layer (Y1) expand, the surface of the expandable base material layer (Y1) is uneven, and the first pressure-sensitive adhesive layer is in contact with the surface.
  • the adhesive surface of the first adhesive layer (X1) is affixed to a hard support.
  • the first pressure-sensitive adhesive layer (X1) can be easily separated together with a slight force at the interface P.
  • the expandable particles when expanded, they can be easily separated by a small force at the interface between the expandable substrate layer (Y1) and the non-expandable substrate layer (Y2). You may adjust.
  • the surface of the semiconductor wafer is attached to the adhesive surface of the second pressure-sensitive adhesive layer (X2), and in step (2), the semiconductor wafer is divided into a plurality of semiconductors. A chip.
  • the plurality of semiconductor chips on the second pressure-sensitive adhesive layer (X2) are stuck and the hard support and the first pressure-sensitive adhesive are adhered. It isolate
  • the non-intumescent base material layer (Y2) is provided on the surface of the expandable base material layer (Y1) opposite to the first pressure-sensitive adhesive layer (X1).
  • the second pressure-sensitive adhesive layer (X2) is laminated on the surface of the non-expandable base material layer (Y2).
  • the non-expandable base layer (Y2) absorbs.
  • the formation of irregularities on the adhesive surface of the second adhesive layer (X2) laminated on the non-expandable base material layer (Y2) is suppressed, and the semiconductor chip attached to the adhesive surface can be held. .
  • the first non-expandable so that irregularities are formed on the pressure-sensitive adhesive surface of the first pressure-sensitive adhesive layer (X1). It is preferable to adjust the storage elastic modulus E ′ of the base material layer (Y2-1) to be low. On the other hand, when the expandable particles expand, the second non-thermally expandable base material layer (Y2-2) is prevented from forming irregularities on the adhesive surface of the second pressure-sensitive adhesive layer (X2).
  • the storage elastic modulus E ′ is preferably adjusted to be high.
  • the storage elastic modulus E ′ of the first non-expandable base layer (Y2-1) when the expandable particles expand is the same as the second non-thermally expandable base layer (Y2) when the expandable particles expand. -2) is preferably adjusted to be lower than the storage elastic modulus E ′.
  • the expandable pressure-sensitive adhesive layer is stuck to a hard support, and the other pressure-sensitive adhesive layer.
  • the expandable pressure-sensitive adhesive layer to be bonded to the hard support contains expandable particles, so that the adhesive force tends to be insufficient.
  • the semiconductor wafer is not sufficiently fixed to the hard support due to a decrease in the adhesive force of the expandable pressure-sensitive adhesive layer to the hard support.
  • the semiconductor wafer is divided to obtain a plurality of semiconductor chips, Defects such as chipped edges are likely to occur.
  • the stealth dicing registered trademark, hereinafter the same
  • the semiconductor wafer is not sufficiently fixed to the hard support, the warping of the semiconductor wafer cannot be suppressed, which causes a chip crack or the like.
  • the pressure-sensitive adhesive sheet used in the production method of the present invention has a base material (Y) having at least an inflatable base material layer (Y1) containing inflatable particles and a non-inflatable base material layer (Y2), and is inflated.
  • a base material (Y) having at least an inflatable base material layer (Y1) containing inflatable particles and a non-inflatable base material layer (Y2), and is inflated.
  • the adhesive particles expand, the adhesive surface of the first pressure-sensitive adhesive layer (X1) is adjusted so that irregularities are formed. Therefore, the first pressure-sensitive adhesive layer (X1) to be attached to the hard support does not need to contain expandable particles, so that the semiconductor wafer can be sufficiently fixed to the hard support and the chip end portion is missing. And the like can be effectively suppressed, and the yield can be improved.
  • the adhesive composition which is a forming material of a 1st adhesive layer (X1) and a 2nd adhesive layer (X2) is also high.
  • the pressure-sensitive adhesive sheet used in one embodiment of the present invention has irregularities on the pressure-sensitive adhesive surface of the first pressure-sensitive adhesive layer (X1) attached to the hard support due to the expansion of the expandable particles, and the hard support and the first pressure-sensitive adhesive. At the interface P with the layer (X1), separation can be easily performed at a time with a slight force.
  • the peeling force (F 1 ) when the expandable particles are expanded and separated at the interface P is usually 0 to 2000 mN / 25 mm, preferably 0 to 1000 mN / It is 25 mm, more preferably 0 to 150 mN / 25 mm, still more preferably 0 to 100 mN / 25 mm, and still more preferably 0 to 50 mN / 25 mm.
  • the peel force (F 1) is in the case of 0 mN / 25 mm, even trying to measure the peel strength by the method described in Example, includes the case where the measurement impossible because peel strength is too small.
  • the first pressure-sensitive adhesive layer is used from the viewpoint of suppressing the occurrence of chipping at the ends of the chips and improving the yield.
  • the peeling force (F 0 ) when separating at the interface P before the expansion of the expandable particles is preferably 0.05 to 10.0 N / 25 mm, More preferably, it is 0.1 to 8.0 N / 25 mm, still more preferably 0.15 to 6.0 N / 25 mm, and still more preferably 0.2 to 4.0 N / 25 mm.
  • the release force (F 0) can also be regarded as the adhesive strength of the first adhesive layer to the rigid support member (X1).
  • the ratio [(F 1 ) / (F 0 )] of the peel force (F 1 ) to the peel force (F 0 ) is preferably 0 to 0.9, more preferably Is 0 to 0.8, more preferably 0 to 0.5, and still more preferably 0 to 0.2.
  • the release force (F 1) is a value measured under the environment when the expandable particles are expanded.
  • the temperature condition for measuring the peel force (F 1 ) may be equal to or higher than the expansion start temperature (t) of the thermally expandable particles.
  • the temperature condition for measuring the peeling force (F 0 ) may be any temperature at which the expandable particles do not expand, and is basically room temperature (23 ° C.).
  • more specific measurement conditions and measurement methods for the peel force (F 1 ) and the peel force (F 0 ) are based on the methods described in the examples.
  • the adhesive strength of the second pressure-sensitive adhesive layer (X2) at room temperature (23 ° C.) is preferably 0.1 to 10.0 N / 25 mm, more preferably 0. The range is from 0.2 to 8.0 N / 25 mm, more preferably from 0.4 to 6.0 N / 25 mm, still more preferably from 0.5 to 4.0 N / 25 mm.
  • the adhesive strength of the second pressure-sensitive adhesive layer (X2) means a value measured by the method described in Examples.
  • each layer which comprises the adhesive sheet used by 1 aspect of this invention is demonstrated.
  • the base material (Y) included in the pressure-sensitive adhesive sheet used in one embodiment of the present invention includes at least an expandable base material layer (Y1) containing inflatable particles and a non-expandable base material layer (Y2).
  • a base material (Y) like the adhesive sheet 1a shown to Fig.1 (a), an expandable base material layer (Y1) and a non-expandable base material layer (Y2) are each laminated
  • the first non-thermally expandable base layer (Y2-1) and the second non-expandable base layer (Y2-1) are formed on both sides of the expandable base layer (Y1).
  • a configuration in which a non-thermally expandable base material layer (Y2-2) is provided may be employed.
  • the base material (Y) included in the pressure-sensitive adhesive sheet used in one embodiment of the present invention has a configuration in which an adhesive layer is provided between the expandable base material layer (Y1) and the non-expandable base material layer (Y2). May be.
  • An adhesive layer may be provided between the conductive base material layer (Y2-2).
  • the adhesive layer can be formed from a general adhesive or a pressure-sensitive adhesive composition that is a material for forming the first pressure-sensitive adhesive layer (X1) and the second pressure-sensitive adhesive layer (X2).
  • the expansion of the expandable particles causes unevenness on the adhesive surface of the first pressure-sensitive adhesive layer (X1), while suppressing formation of unevenness on the adhesive surface of the second pressure-sensitive adhesive layer (X2).
  • the base material (Y) is provided with at least an inflatable base material layer (Y1) and a non-expandable base material layer (Y2) on the outermost surface.
  • the base material (Y) which the adhesive sheet 1a shown to Fig.1 (a) has, an expandable base material layer (Y1), an adhesive bond layer, and a non-expandable base material layer (Y2) are this order.
  • stacked with are mentioned.
  • Examples of the material for forming the adhesive layer include the same adhesive composition as the material for forming the adhesive layer included in the transfer tape described below.
  • the expandable substrate layer (Y1) and the non-expandable substrate layer (Y2) constituting the substrate (Y) are both non-adhesive layers.
  • the determination as to whether or not the layer is a non-adhesive layer can be made if the probe tack value measured in accordance with JIS Z0237: 1991 is less than 50 mN / 5 mm ⁇ with respect to the surface of the target layer. Is judged as a “non-sticky layer”.
  • the probe tack values on the surfaces of the expandable base material layer (Y1) and the non-expandable base material layer (Y2) of the pressure-sensitive adhesive sheet (I) used in one embodiment of the present invention are each independently usually less than 50 mN / 5 mm ⁇ . However, it is preferably less than 30 mN / 5 mm ⁇ , more preferably less than 10 mN / 5 mm ⁇ , and even more preferably less than 5 mN / 5 mm ⁇ .
  • the specific measuring method of the probe tack value in the surface of a thermally expansible base material is based on the method as described in an Example.
  • the thickness of the substrate (Y) is preferably 15 to 2000 ⁇ m, more preferably 25 to 1500 ⁇ m, still more preferably 30 to 1000 ⁇ m, and still more preferably 40 to 500 ⁇ m. is there.
  • the thickness of the expandable substrate (Y1) before expansion of the expandable particles is preferably 10 to 1000 ⁇ m, more preferably 20 to 700 ⁇ m, still more preferably 25 to 500 ⁇ m, and still more preferably 30 to 300 ⁇ m.
  • the thickness of the non-expandable substrate (Y2) is preferably 10 to 1000 ⁇ m, more preferably 20 to 700 ⁇ m, still more preferably 25 to 500 ⁇ m, and still more preferably 30 to 300 ⁇ m.
  • a plurality of expandable substrates (Y1) or non-expandable substrates (Y2) exist via other layers as in the adhesive sheet 1b shown in FIG. 1 (b).
  • the thickness of said expansible base material (Y1) or a non-expandable base material (Y2) means the thickness per each layer.
  • the thickness ratio between the expandable base material layer (Y1) and the non-thermally expandable base material layer (Y2) before expansion of the expandable particles [(Y1) / ( Y2)] is preferably 0.02 to 200, more preferably 0.03 to 150, and still more preferably 0.05 to 100.
  • the thickness ratio [(Y1) / (X1)] is preferably 0.2 or more, more preferably 0.5 or more, still more preferably 1.0 or more, and still more preferably 5.0 or more. Also, it is preferably 1000 or less, more preferably 200 or less, still more preferably 60 or less, and still more preferably 30 or less.
  • the ratio [(Y2) / (X2)] is preferably 0.1 or more, more preferably 0.2 or more, still more preferably 0.3 or more, and preferably 20 or less, more preferably 10 or less. More preferably, it is 5 or less.
  • the expandable substrate layer (Y1) and the non-expandable substrate layer (Y2) constituting the substrate (Y) will be described.
  • the expandable substrate layer (Y1) constituting the substrate (Y) is a layer that contains expandable particles and can be expanded by a predetermined expansion treatment.
  • the content of expandable particles in the expandable substrate layer (Y1) is preferably 1 to 40% by mass, more preferably 5%, based on the total mass (100% by mass) of the expandable substrate layer (Y1). It is ⁇ 35% by mass, more preferably 10 to 30% by mass, and still more preferably 15 to 25% by mass.
  • the surface of the expandable base material layer (Y1) is a surface formed by an oxidation method, a roughening method, or the like.
  • Treatment, easy adhesion treatment, or primer treatment may be performed.
  • the oxidation method include corona discharge treatment, plasma discharge treatment, chromic acid treatment (wet), hot air treatment, ozone, and ultraviolet irradiation treatment.
  • the unevenness method include sand blast method and solvent treatment method. Etc.
  • the expandable particles contained in the expandable substrate layer (Y1) may be any particles that expand by performing a predetermined treatment, such as thermally expandable particles that expand by heating at a predetermined temperature or higher, Examples include UV-expandable particles that absorb a predetermined amount of ultraviolet rays to generate gas and expand inside the particles.
  • the volume expansion coefficient of the expandable particles is preferably 1.5 to 100 times, more preferably 2 to 80 times, still more preferably 2.5 to 60 times, and still more preferably 3 to 40 times.
  • the average particle diameter of the expandable particles before expansion at 23 ° C. is preferably 3 to 100 ⁇ m, more preferably 4 to 70 ⁇ m, still more preferably 6 to 60 ⁇ m, and still more preferably 10 to 50 ⁇ m.
  • the average particle size of the expandable particles is a volume-median particle size (D 50 ), and is measured using a laser diffraction particle size distribution measuring device (for example, product name “Mastersizer 3000” manufactured by Malvern). In the particle distribution of the expandable particles, it means a particle size corresponding to 50% of the cumulative volume frequency calculated from the smaller particle size of the expandable particles.
  • the 90% particle diameter (D 90 ) of the expandable particles before expansion at 23 ° C. is preferably 10 to 150 ⁇ m, more preferably 20 to 100 ⁇ m, still more preferably 25 to 90 ⁇ m, and still more preferably 30 to 80 ⁇ m. .
  • the 90% particle size (D 90 ) of the expandable particles is the particle distribution of the expandable particles measured using a laser diffraction particle size distribution measuring device (for example, product name “Mastersizer 3000” manufactured by Malvern). In FIG. 5, the particle size corresponding to 90% of the cumulative volume frequency calculated from the smaller particle size of the expandable particles.
  • the expandable particles are preferably thermally expandable particles having an expansion start temperature (t) of 60 to 270 ° C. That is, the expandable substrate layer (Y1) is preferably a thermally expandable substrate layer (Y1-1) containing thermally expandable particles having an expansion start temperature (t) of 60 to 270 ° C.
  • the conductive base material layer (Y1-1) more preferably satisfies the following requirement (1).
  • the storage elastic modulus E ′ (t) of the thermally expandable substrate layer (Y1-1) at the expansion start temperature (t) of the thermally expandable particles is 1.0 ⁇ 10 7 Pa It is as follows. In the present specification, the storage elastic modulus E ′ of the thermally expandable base material layer (Y1-1) at a predetermined temperature means a value measured by the method described in the examples.
  • the requirement (1) can be said to be an index indicating the rigidity of the thermally expandable base material layer (Y1-1) immediately before the thermally expandable particles expand. That is, when the thermally expandable particles expand, if the thermally expandable substrate layer (Y1-1) is flexible enough to satisfy the above requirement (1), the thermally expandable substrate layer (Y1 As a result, unevenness is likely to be formed on the surface of -1), and unevenness is also likely to occur on the adhesive surface of the first pressure-sensitive adhesive layer (X1). As a result, it is possible to easily separate them with a slight force at the interface P between the hard support and the first pressure-sensitive adhesive layer (X1).
  • the storage elastic modulus E ′ (t) defined by requirement (1) of the thermally expandable base material layer (Y1-1) is preferably 9.0 ⁇ 10 6 Pa or less, more preferably 8.0. ⁇ 10 6 Pa or less, more preferably 6.0 ⁇ 10 6 Pa or less, and still more preferably 4.0 ⁇ 10 6 Pa or less.
  • the flow of the expanded heat-expandable particles is suppressed, the shape maintaining property of the unevenness generated on the surface of the heat-expandable base material layer (Y1-1) is improved, and the pressure-sensitive adhesive surface of the first pressure-sensitive adhesive layer (X1) is improved.
  • the storage elastic modulus E ′ (t) defined by the requirement (1) of the thermally expandable base material layer (Y1-1) is preferably 1.0 ⁇ 10 3 Pa or more. Preferably it is 1.0 ⁇ 10 4 Pa or more, more preferably 1.0 ⁇ 10 5 Pa or more.
  • the thermally expandable base material layer (Y1-1) preferably satisfies the following requirement (2), and more preferably satisfies the requirement (2) together with the requirement (1).
  • the storage elastic modulus E ′ (23) of the thermally expandable base material layer (Y1-1) at 23 ° C. is 1.0 ⁇ 10 6 Pa or more.
  • thermally expansible base material layer (Y1-1) that satisfies the above requirement (2), it is possible to prevent misalignment when the semiconductor wafer is attached to the adhesive surface of the second adhesive layer (X2). Moreover, excessive sinking of the semiconductor wafer into the second pressure-sensitive adhesive layer (X2) can also be prevented.
  • the storage elastic modulus E ′ (23) of the thermally expandable base material layer (Y1-1) defined by the above requirement (2) is preferably 5.0 ⁇ 10 6 to 5.0 ⁇ 10 12 Pa. More preferably 1.0 ⁇ 10 7 to 1.0 ⁇ 10 12 Pa, still more preferably 5.0 ⁇ 10 7 to 1.0 ⁇ 10 11 Pa, and still more preferably 1.0 ⁇ 10 8 to 1. 0 ⁇ 10 10 Pa.
  • the heat-expandable particles contained in the heat-expandable base material layer (Y1-1) are preferably heat-expandable particles having an expansion start temperature (t) of 60 to 270 ° C.
  • the expansion start temperature (t) of the thermally expandable particles means a value measured based on the following method.
  • Measurement method of expansion start temperature (t) of thermally expandable particles To an aluminum cup having a diameter of 6.0 mm (inner diameter 5.65 mm) and a depth of 4.8 mm, 0.5 mg of thermally expandable particles to be measured is added, and an aluminum lid (diameter 5.6 mm, thickness 0. 1 mm) is prepared.
  • the height of the sample is measured from the upper part of the aluminum lid to the sample with a force of 0.01 N applied by a pressurizer. Then, in a state where a force of 0.01 N is applied by the pressurizer, heating is performed from 20 ° C. to 300 ° C. at a rate of temperature increase of 10 ° C./min, and the amount of displacement of the pressurizer in the vertical direction is measured.
  • the displacement start temperature be the expansion start temperature (t).
  • the thermally expandable particles include a microencapsulated foaming agent composed of an outer shell made of a thermoplastic resin and an encapsulated component encapsulated in the outer shell and vaporized when heated to a predetermined temperature.
  • a microencapsulated foaming agent composed of an outer shell made of a thermoplastic resin and an encapsulated component encapsulated in the outer shell and vaporized when heated to a predetermined temperature.
  • the thermoplastic resin constituting the outer shell of the microencapsulated foaming agent include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polysulfone.
  • Examples of the inclusion component contained in the outer shell include propane, butane, pentane, hexane, heptane, octane, nonane, decane, isobutane, isopentane, isohexane, isoheptane, isooctane, isononane, isodecane, cyclopropane, cyclobutane, cyclopentane.
  • the expandable substrate layer (Y1) is preferably formed from a resin composition (y) containing a resin and expandable particles.
  • the substrate additive include an ultraviolet absorber, a light stabilizer, an antioxidant, an antistatic agent, a slip agent, an antiblocking agent, and a colorant.
  • These base material additives may be used alone or in combination of two or more. When these base material additives are contained, the content of each base material additive is preferably 0.0001 to 20 parts by mass, more preferably 0.001 to about 100 parts by mass of the resin. 10 parts by mass.
  • the expandable particles contained in the resin composition (y), which is a material for forming the expandable substrate layer (Y1), are as described above, and are preferably thermally expandable particles.
  • the content of the expandable particles is preferably 1 to 40% by mass, more preferably 5 to 35% by mass, and further preferably 10 to 10% by mass with respect to the total amount (100% by mass) of the active ingredients of the resin composition (y). 30% by mass, and still more preferably 15 to 25% by mass.
  • the resin contained in the resin composition (y) that is a material for forming the expandable base material layer (Y1) may be a non-adhesive resin or an adhesive resin. That is, even if the resin contained in the resin composition (y) is an adhesive resin, the adhesive resin is a polymerizable compound in the process of forming the expandable base material layer (Y1) from the resin composition (y). And the resulting resin becomes a non-adhesive resin, and the expandable base material layer (Y1) containing the resin may be non-adhesive.
  • the mass average molecular weight (Mw) of the resin contained in the resin composition (y) is preferably 1,000 to 1,000,000, more preferably 1,000 to 700,000, and still more preferably 1,000 to 500,000. Further, when the resin is a copolymer having two or more kinds of structural units, the form of the copolymer is not particularly limited, and any of a block copolymer, a random copolymer, and a graft copolymer It may be.
  • the content of the resin is preferably 50 to 99% by mass, more preferably 60 to 95% by mass, and still more preferably 65 to 90% by mass with respect to the total amount (100% by mass) of the active ingredients of the resin composition (y). %, More preferably 70 to 85% by mass.
  • the resin contained in the resin composition (y) is an acrylic urethane from the viewpoint of forming an expandable base layer (Y1) that easily forms irregularities on the surface when the expandable particles are expanded. It is preferable that 1 or more types chosen from a system resin and an olefin resin are included. Moreover, as said acrylic urethane type resin, the following resin (U1) is preferable.
  • An acrylic urethane resin (U1) obtained by polymerizing a urethane prepolymer (UP) and a vinyl compound containing a (meth) acrylic acid ester.
  • urethane prepolymer (UP) serving as the main chain of the acrylic urethane resin (U1) include a reaction product of a polyol and a polyvalent isocyanate.
  • the urethane prepolymer (UP) is preferably obtained by further subjecting it to a chain extension reaction using a chain extender.
  • Examples of the polyol used as a raw material for the urethane prepolymer (UP) include alkylene type polyols, ether type polyols, ester type polyols, ester amide type polyols, ester / ether type polyols, and carbonate type polyols. These polyols may be used independently and may use 2 or more types together.
  • the polyol used in one embodiment of the present invention is preferably a diol, more preferably an ester diol, an alkylene diol, and a carbonate diol, and even more preferably an ester diol and a carbonate diol.
  • ester diol examples include alkane diols such as 1,3-propanediol, 1,4-butanediol, 1,5-pentanediol, neopentyl glycol, 1,6-hexanediol; ethylene glycol, propylene glycol, One or more selected from diols such as alkylene glycols such as diethylene glycol and dipropylene glycol; phthalic acid, isophthalic acid, terephthalic acid, naphthalenedicarboxylic acid, 4,4-diphenyldicarboxylic acid, diphenylmethane-4 , 4'-dicarboxylic acid, succinic acid, adipic acid, azelaic acid, sebacic acid, het acid, maleic acid, fumaric acid, itaconic acid, cyclohexane-1,3-dicarboxylic acid, cyclohexane-1,4-dicarboxyl
  • alkylene type diol examples include alkane diols such as 1,3-propanediol, 1,4-butanediol, 1,5-pentanediol, neopentyl glycol, 1,6-hexanediol; ethylene glycol, propylene glycol, And alkylene glycols such as diethylene glycol and dipropylene glycol; polyalkylene glycols such as polyethylene glycol, polypropylene glycol, and polybutylene glycol; polyoxyalkylene glycols such as polytetramethylene glycol; and the like.
  • alkane diols such as 1,3-propanediol, 1,4-butanediol, 1,5-pentanediol, neopentyl glycol, 1,6-hexanediol
  • ethylene glycol, propylene glycol And alkylene glycols such as diethylene glycol and dipropylene glycol
  • Examples of the carbonate type diol include 1,4-tetramethylene carbonate diol, 1,5-pentamethylene carbonate diol, 1,6-hexamethylene carbonate diol, 1,2-propylene carbonate diol, and 1,3-propylene carbonate diol. 2,2-dimethylpropylene carbonate diol, 1,7-heptamethylene carbonate diol, 1,8-octamethylene carbonate diol, 1,4-cyclohexane carbonate diol, and the like.
  • polyvalent isocyanate used as a raw material for the urethane prepolymer (UP) examples include aromatic polyisocyanates, aliphatic polyisocyanates, and alicyclic polyisocyanates. These polyvalent isocyanates may be used alone or in combination of two or more. These polyisocyanates may be a trimethylolpropane adduct type modified product, a burette type modified product reacted with water, or an isocyanurate type modified product containing an isocyanurate ring.
  • diisocyanate is preferable, and 4,4′-diphenylmethane diisocyanate (MDI), 2,4-tolylene diisocyanate (2,4-TDI), 2,6 More preferred is at least one selected from tolylene diisocyanate (2,6-TDI), hexamethylene diisocyanate (HMDI), and alicyclic diisocyanate.
  • MDI 4,4′-diphenylmethane diisocyanate
  • 2,4-TDI 2,4-tolylene diisocyanate
  • 2,6 More preferred is at least one selected from tolylene diisocyanate (2,6-TDI), hexamethylene diisocyanate (HMDI), and alicyclic diisocyanate.
  • alicyclic diisocyanate examples include 3-isocyanate methyl-3,5,5-trimethylcyclohexyl isocyanate (isophorone diisocyanate, IPDI), 1,3-cyclopentane diisocyanate, 1,3-cyclohexane diisocyanate, 1,4-cyclohexane.
  • IPDI isophorone diisocyanate
  • Examples include diisocyanate, methyl-2,4-cyclohexane diisocyanate, methyl-2,6-cyclohexane diisocyanate, and isophorone diisocyanate (IPDI) is preferred.
  • the urethane prepolymer (UP) serving as the main chain of the acrylic urethane resin (U1) is a reaction product of a diol and a diisocyanate, and is a straight chain having ethylenically unsaturated groups at both ends.
  • a urethane prepolymer is preferred.
  • an NCO group at the end of the linear urethane prepolymer obtained by reacting a diol and a diisocyanate compound, and a hydroxyalkyl (meth) acrylate And a method of reacting with.
  • hydroxyalkyl (meth) acrylate examples include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, and 3-hydroxy Examples thereof include butyl (meth) acrylate and 4-hydroxybutyl (meth) acrylate.
  • the (meth) acrylic acid ester is preferably one or more selected from alkyl (meth) acrylates and hydroxyalkyl (meth) acrylates, and more preferably used in combination with alkyl (meth) acrylates and hydroxyalkyl (meth) acrylates.
  • the proportion of hydroxyalkyl (meth) acrylate to 100 parts by mass of alkyl (meth) acrylate is preferably 0.1 to 100 parts by mass, The amount is preferably 0.5 to 30 parts by mass, more preferably 1.0 to 20 parts by mass, and still more preferably 1.5 to 10 parts by mass.
  • the carbon number of the alkyl group of the alkyl (meth) acrylate is preferably 1 to 24, more preferably 1 to 12, still more preferably 1 to 8, and still more preferably 1 to 3.
  • hydroxyalkyl (meth) acrylate the same thing as the hydroxyalkyl (meth) acrylate used in order to introduce
  • vinyl compounds other than (meth) acrylic acid esters include aromatic hydrocarbon vinyl compounds such as styrene, ⁇ -methylstyrene, and vinyl toluene; vinyl ethers such as methyl vinyl ether and ethyl vinyl ether; vinyl acetate and vinyl propionate.
  • Polar group-containing monomers such as (meth) acrylonitrile, N-vinylpyrrolidone, (meth) acrylic acid, maleic acid, fumaric acid, itaconic acid, and meta (acrylamide). These may be used alone or in combination of two or more.
  • the content of the (meth) acrylic acid ester in the vinyl compound is preferably 40 to 100% by mass, more preferably 65 to 100% by mass, and still more preferably based on the total amount (100% by mass) of the vinyl compound. It is 80 to 100% by mass, more preferably 90 to 100% by mass.
  • the total content of alkyl (meth) acrylate and hydroxyalkyl (meth) acrylate in the vinyl compound is preferably 40 to 100% by mass, more preferably 65 to 100% by mass with respect to the total amount (100% by mass) of the vinyl compound.
  • the amount is 100% by mass, more preferably 80 to 100% by mass, and still more preferably 90 to 100% by mass.
  • the content ratio of the structural unit (u11) derived from the urethane prepolymer (UP) and the structural unit (u12) derived from the vinyl compound [(u11 ) / (U12)] is preferably 10/90 to 80/20, more preferably 20/80 to 70/30, still more preferably 30/70 to 60/40, and still more preferably 35 by mass ratio. / 65 to 55/45.
  • olefin resin examples include a polymer having at least a structural unit derived from an olefin monomer.
  • the olefin monomer is preferably an ⁇ -olefin having 2 to 8 carbon atoms, and specifically includes ethylene, propylene, butylene, isobutylene, 1-hexene and the like. Among these, ethylene and propylene are preferable.
  • olefinic resins for example, ultra low density polyethylene (VLDPE, density: 880 kg / m 3 or more 910 kg / m less than 3), low density polyethylene (LDPE, density: 910 kg / m 3 or more 915 kg / m less than 3 ), Medium density polyethylene (MDPE, density: 915 kg / m 3 or more and less than 942 kg / m 3 ), high density polyethylene (HDPE, density: 942 kg / m 3 or more), linear low density polyethylene, etc .; polypropylene resin (PP); polybutene resin (PB); ethylene-propylene copolymer; olefin elastomer (TPO); ethylene-vinyl acetate copolymer (EVA); ethylene-propylene- (5-ethylidene-2-norbornene), etc. Olefin terpolymers; and the like.
  • VLDPE ultra low density polyethylene
  • LDPE low density poly
  • the olefin resin may be a modified olefin resin further modified by one or more selected from acid modification, hydroxyl group modification, and acrylic modification.
  • an acid-modified olefin resin obtained by subjecting an olefin resin to acid modification a modified polymer obtained by graft polymerization of the above-mentioned unmodified olefin resin with an unsaturated carboxylic acid or its anhydride.
  • unsaturated carboxylic acid or anhydride thereof include maleic acid, fumaric acid, itaconic acid, citraconic acid, glutaconic acid, tetrahydrophthalic acid, aconitic acid, (meth) acrylic acid, maleic anhydride, itaconic anhydride.
  • Glutaconic anhydride citraconic anhydride, aconitic anhydride, norbornene dicarboxylic anhydride, tetrahydrophthalic anhydride, and the like.
  • unsaturated carboxylic acid or its anhydride may be used independently and may use 2 or more types together.
  • An acrylic modified olefin resin obtained by subjecting an olefin resin to acrylic modification is a modification obtained by graft polymerization of an alkyl (meth) acrylate as a side chain to the above-mentioned unmodified olefin resin as a main chain.
  • a polymer is mentioned.
  • the number of carbon atoms of the alkyl group contained in the alkyl (meth) acrylate is preferably 1-20, more preferably 1-16, and still more preferably 1-12.
  • As said alkyl (meth) acrylate the same thing as the compound which can be selected as a below-mentioned monomer (a1 ') is mentioned, for example.
  • Examples of the hydroxyl group-modified olefin resin obtained by modifying the olefin resin with a hydroxyl group include a modified polymer obtained by graft-polymerizing a hydroxyl group-containing compound to the above-mentioned unmodified olefin resin as the main chain.
  • Examples of the hydroxyl group-containing compound include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, and 3-hydroxybutyl.
  • Examples thereof include hydroxyalkyl (meth) acrylates such as (meth) acrylate and 4-hydroxybutyl (meth) acrylate; unsaturated alcohols such as vinyl alcohol and allyl alcohol.
  • the resin composition (y) may contain a resin other than the acrylic urethane-based resin and the olefin-based resin as long as the effects of the present invention are not impaired.
  • resins include vinyl resins such as polyvinyl chloride, polyvinylidene chloride, polyvinyl alcohol, ethylene-vinyl acetate copolymer, ethylene-vinyl alcohol copolymer; polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate.
  • Polyester resin such as phthalate; polystyrene; acrylonitrile-butadiene-styrene copolymer; cellulose triacetate; polycarbonate; polyurethane not applicable to acrylic urethane resin; polymethylpentene; polysulfone; polyetheretherketone; polyethersulfone; Sulfides; Polyimide resins such as polyetherimide and polyimide; Polyamide resins; Acrylic resins; Fluorine resins and the like.
  • the resin composition (y) contains a resin other than the acrylic urethane-based resin and the olefin-based resin.
  • a smaller ratio is preferable.
  • the content ratio of the resin other than the acrylic urethane-based resin and the olefin-based resin is preferably less than 30 parts by mass, more preferably 20 parts by mass with respect to 100 parts by mass of the total amount of the resin contained in the resin composition (y). Less than, more preferably less than 10 parts by weight, still more preferably less than 5 parts by weight, and even more preferably less than 1 part by weight.
  • solvent-free resin composition (y1) As one aspect of the resin composition (y), an oligomer having an ethylenically unsaturated group having a mass average molecular weight (Mw) of 50000 or less, an energy ray polymerizable monomer, and the above-described thermally expandable particles are blended, Examples thereof include a solventless resin composition (y1) that does not contain a solvent. In the solventless resin composition (y1), no solvent is blended, but the energy beam polymerizable monomer contributes to the improvement of the plasticity of the oligomer.
  • an inflatable substrate layer (Y1) that easily forms irregularities on the surface when the expandable particles expand is formed.
  • the type, shape, and blending amount (content) of the expandable particles blended in the solventless resin composition (y1) are the same as those of the resin composition (y) and are as described above.
  • the mass average molecular weight (Mw) of the oligomer contained in the solventless resin composition (y1) is 50000 or less, preferably 1000 to 50000, more preferably 2000 to 40000, and still more preferably 3000 to 35000. More preferably, it is 4000-30000.
  • oligomer As said oligomer, what is necessary is just to have an ethylenically unsaturated group whose mass mean molecular weight is 50000 or less among resin contained in the above-mentioned resin composition (y), but the above-mentioned urethane prepolymer (UP ) Is preferred.
  • a modified olefin resin having an ethylenically unsaturated group can also be used.
  • the total content of the oligomer and the energy beam polymerizable monomer in the solventless resin composition (y1) is preferably 50 to 100% with respect to the total amount (100% by mass) of the solventless resin composition (y1). It is 99% by mass, more preferably 60 to 95% by mass, still more preferably 65 to 90% by mass, and still more preferably 70 to 85% by mass.
  • Examples of the energy ray polymerizable monomer include isobornyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyloxy (meth) acrylate, cyclohexyl (meth) acrylate, adamantane ( Alicyclic polymerizable compounds such as (meth) acrylate and tricyclodecane acrylate; Aromatic polymerizable compounds such as phenylhydroxypropyl acrylate, benzyl acrylate and phenol ethylene oxide modified acrylate; Tetrahydrofurfuryl (meth) acrylate, morpholine acrylate, N- And heterocyclic polymerizable compounds such as vinylpyrrolidone and N-vinylcaprolactam. These energy beam polymerizable monomers may be used independently and may use 2 or more types together.
  • the blending ratio of the oligomer and the energy beam polymerizable monomer is preferably 20/80 to 90/10, more preferably 30/70 to 85/15, still more preferably 35/65. ⁇ 80/20.
  • the solventless resin composition (y1) is further blended with a photopolymerization initiator.
  • a photopolymerization initiator By containing the photopolymerization initiator, the curing reaction can be sufficiently advanced even by irradiation with a relatively low energy beam.
  • photopolymerization initiator examples include 1-hydroxy-cyclohexyl-phenyl-ketone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzyl phenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyro Nitrile, dibenzyl, diacetyl, 8-chloranthraquinone and the like can be mentioned. These photoinitiators may be used independently and may use 2 or more types together.
  • the blending amount of the photopolymerization initiator is preferably 0.01 to 5 parts by mass, more preferably 0.01 to 4 parts by mass with respect to the total amount (100 parts by mass) of the oligomer and the energy ray polymerizable monomer.
  • the amount is preferably 0.02 to 3 parts by mass.
  • Non-expandable base material layer (Y2) Examples of the material for forming the non-expandable base material layer (Y2) constituting the base material (Y) include paper materials, resins, metals, and the like. Examples of the paper material include thin paper, medium quality paper, high quality paper, impregnated paper, coated paper, art paper, sulfate paper, glassine paper, and the like.
  • the resin examples include polyolefin resins such as polyethylene and polypropylene; vinyl resins such as polyvinyl chloride, polyvinylidene chloride, polyvinyl alcohol, ethylene-vinyl acetate copolymer, and ethylene-vinyl alcohol copolymer; polyethylene terephthalate, poly Polyester resins such as butylene terephthalate and polyethylene naphthalate; polystyrene; acrylonitrile-butadiene-styrene copolymer; cellulose triacetate; polycarbonate; urethane resin such as polyurethane and acrylic-modified polyurethane; polymethylpentene; polysulfone; polyether ether ketone; Polyethersulfone; Polyphenylene sulfide; Polyimide resin such as polyetherimide and polyimide; Polyamide resin; Acrylic resin; Tsu Motokei resin, and the like.
  • the metal examples include aluminum, tin, chromium, and
  • These forming materials may be composed of one kind or in combination of two or more kinds.
  • a non-intumescent substrate layer (Y2) using two or more kinds of forming materials in combination a paper film is laminated with a thermoplastic resin such as polyethylene, or a metal film is formed on the surface of a resin film or sheet containing a resin. And the like.
  • a method for forming the metal layer for example, the above metal is deposited by a PVD method such as vacuum deposition, sputtering, or ion plating, or a metal foil made of the above metal is attached using a general adhesive. And the like.
  • the non-expandable base layer (Y2) contains a resin
  • the non-intumescent base material layer (Y2) contains a resin
  • it may contain the above-mentioned base material additive that can be contained in the resin composition (y) together with the resin.
  • the non-intumescent substrate layer (Y2) is present at a position farther from the first pressure-sensitive adhesive layer (X1) than the above-described inflatable substrate layer (Y1), and the inflatable substrate layer (Y1) ) And the first pressure-sensitive adhesive layer (X1), there is no non-expandable base layer (Y2), and the non-expandable base layer (Y2) when the expandable particles expand.
  • the storage elastic modulus E ′ is preferably larger than the storage elastic modulus E ′ of the expandable base material layer (Y1) when the expandable particles expand.
  • the expandable base material layer is expanded by the expansion of the expandable particles.
  • the unevenness generated on the surface of (Y1) is transmitted to the first pressure-sensitive adhesive layer (X1) without interposing the non-intumescent base material layer (Y2), and on the pressure-sensitive adhesive surface of the first pressure-sensitive adhesive layer (X1).
  • unevenness is likely to occur.
  • the storage elastic modulus E ′ of the non-expandable base material layer (Y2) is larger than the storage elastic modulus E ′ of the expandable base material layer (Y1).
  • the surface of the expandable substrate layer (Y1) on the non-expandable substrate layer (Y2) side is prevented from being uneven, and as a result, the first of the expandable substrate layer (Y1). Unevenness is likely to occur on the surface on the pressure-sensitive adhesive layer (X1) side, and therefore unevenness is also likely to occur on the adhesive surface of the first pressure-sensitive adhesive layer (X1).
  • the storage elastic modulus E ′ of the non-expandable base material layer (Y2) when the expandable particles are expanded is as described above from the viewpoint of easily forming irregularities on the adhesive surface of the first adhesive layer (X1).
  • the pressure is 1.0 MPa or more.
  • the storage elastic modulus E ′ of the non-expandable base material layer (Y2) when the expandable particles expand is preferably 1.0 to 5.0 ⁇ 10 2 MPa, more preferably 1.0.
  • the storage elastic modulus of the non-expandable base material layer (Y2) at 23 ° C. E ′ (23) is preferably 5.0 ⁇ 10 1 to 5.0 ⁇ 10 4 MPa, more preferably 1.0 ⁇ 10 2 to 1.0 ⁇ 10 4 MPa, and even more preferably 5.0 ⁇ 10. 2 to 5.0 ⁇ 10 3 MPa.
  • a non-expandable base material layer (Y2) is a non-expandable layer judged based on the above-mentioned method.
  • the volume change rate (%) of the non-expandable base material layer (Y2) calculated from the above formula is less than 5% by volume, preferably less than 2% by volume, more preferably less than 1% by volume. More preferably, it is less than 0.1 volume%, More preferably, it is less than 0.01 volume%.
  • a non-expandable base material layer (Y2) may contain a thermally expansible particle.
  • a resin contained in the non-expandable base material layer (Y2) it is possible to adjust the volume change rate to the above range even if thermally expandable particles are included.
  • the specific content of the heat-expandable particles is usually less than 3% by mass, preferably less than 1% by mass, and more preferably relative to the total mass (100% by mass) of the non-expandable base material layer (Y2). It is less than 0.1% by mass, more preferably less than 0.01% by mass, and still more preferably less than 0.001% by mass.
  • the pressure-sensitive adhesive sheet used in one embodiment of the present invention has a first pressure-sensitive adhesive layer (X1) and a second pressure-sensitive adhesive layer (X2).
  • the pressure-sensitive adhesive surface of the first pressure-sensitive adhesive layer (X1) is stuck to a hard support
  • the pressure-sensitive adhesive surface of the second pressure-sensitive adhesive layer (X2) is stuck to a semiconductor wafer.
  • the first pressure-sensitive adhesive layer (X1) has high adhesion to the hard support before the expansion of the expandable particles contained in the expandable base material layer (Y1), and the semiconductor wafer is sufficiently fixed to the hard support.
  • the property which can do is required.
  • the storage shear modulus G ′ (23) of the first pressure-sensitive adhesive layer (X1) at 23 ° C. is preferably 1.0 ⁇ 10 8 Pa or less, more preferably 5.0 ⁇ 10 7 Pa or less. More preferably, it is 1.0 ⁇ 10 7 Pa or less.
  • the storage shear modulus G ′ (23) of the first pressure-sensitive adhesive layer (X1) at 23 ° C. is preferably 1.0 ⁇ 10 4 Pa or more, more preferably 5.0 ⁇ 10 4 Pa or more. More preferably, it is 1.0 ⁇ 10 5 Pa or more.
  • the second pressure-sensitive adhesive layer (X2) is required not only to adhere to the semiconductor wafer but also to adhere to the semiconductor chip obtained by dividing the semiconductor wafer, and the semiconductor chip It is also necessary to suppress the phenomenon of excessive sinking into the agent layer (X2).
  • the storage shear modulus G ′ (23) of the second pressure-sensitive adhesive layer (X2) at 23 ° C. is preferably 1.0 ⁇ 10 4 to 1.0 ⁇ 10 8 Pa, more preferably 5 0.0 ⁇ 10 4 to 5.0 ⁇ 10 7 Pa, more preferably 1.0 ⁇ 10 5 to 1.0 ⁇ 10 7 Pa.
  • the storage shear elastic modulus G '(23) of the 1st adhesive layer (X1) and the 2nd adhesive layer (X2) means the value measured by the method as described in an Example. .
  • the thickness of the first pressure-sensitive adhesive layer (X1) is preferably 1 to 60 ⁇ m, more preferably 2 to 50 ⁇ m, still more preferably 3 to 40 ⁇ m, and still more preferably 5 to 30 ⁇ m.
  • the thickness of the second pressure-sensitive adhesive layer (X2) is preferably 1 to 60 ⁇ m, more preferably 2 to 50 ⁇ m, still more preferably 3 to 40 ⁇ m, and still more preferably 5 to 30 ⁇ m.
  • the first pressure-sensitive adhesive layer (X1) and the second pressure-sensitive adhesive layer (X2) can be formed from a pressure-sensitive adhesive composition (x) containing a pressure-sensitive adhesive resin.
  • adhesive composition (x) may contain additives for adhesives, such as a crosslinking agent, a tackifier, a polymeric compound, a polymerization initiator, as needed.
  • additives for adhesives such as a crosslinking agent, a tackifier, a polymeric compound, a polymerization initiator, as needed.
  • any polymer may be used as long as the resin has adhesiveness and has a mass average molecular weight (Mw) of 10,000 or more.
  • the mass average molecular weight (Mw) of the adhesive resin used in one embodiment of the present invention is preferably 10,000 to 2,000,000, more preferably 20,000 to 1,500,000, and even more preferably 30,000, from the viewpoint of improving the adhesive strength. ⁇ 1 million.
  • the adhesive resin examples include rubber resins such as acrylic resins, urethane resins, and polyisobutylene resins, polyester resins, olefin resins, silicone resins, and polyvinyl ether resins. These adhesive resins may be used alone or in combination of two or more. Further, when these adhesive resins are copolymers having two or more kinds of structural units, the form of the copolymer is not particularly limited, and a block copolymer, a random copolymer, and a graft copolymer are not limited. Any of polymers may be used.
  • the adhesive resin used in one embodiment of the present invention may be an energy ray curable adhesive resin in which a polymerizable functional group is introduced into the side chain of the above-mentioned adhesive resin.
  • the adhesive force can be reduced by irradiating energy rays. Therefore, the obtained semiconductor chip can be easily picked up from the second pressure-sensitive adhesive layer (X2).
  • the polymerizable functional group include a (meth) acryloyl group and a vinyl group.
  • energy rays include ultraviolet rays and electron beams, but ultraviolet rays are preferred.
  • the energy ray hardening-type adhesive composition containing the monomer or oligomer which has a polymerizable functional group may be sufficient.
  • These energy ray curable pressure-sensitive adhesive compositions preferably further contain a photopolymerization initiator.
  • a photopolymerization initiator By containing the photopolymerization initiator, the curing reaction can be sufficiently advanced even by irradiation with a relatively low energy beam.
  • a photoinitiator the same thing as what is mix
  • the content of the photopolymerization initiator is preferably 0.01 to 10 parts by mass, more preferably 100 parts by mass of the energy ray curable adhesive resin or 100 parts by mass of the monomer or oligomer having a polymerizable functional group.
  • the amount is 0.03 to 5 parts by mass, more preferably 0.05 to 2 parts by mass.
  • the adhesive resin preferably contains an acrylic resin from the viewpoint of developing an excellent adhesive force.
  • the first pressure-sensitive adhesive layer (X1) by forming the first pressure-sensitive adhesive layer (X1) from a pressure-sensitive adhesive composition containing an acrylic resin, it is possible to easily form irregularities on the surface of the first pressure-sensitive adhesive layer.
  • the content of the acrylic resin in the adhesive resin is preferably 30 to 100% by mass, more preferably 50%, based on the total amount (100% by mass) of the adhesive resin contained in the adhesive composition (x). To 100% by mass, more preferably 70 to 100% by mass, and still more preferably 85 to 100% by mass.
  • the content of the adhesive resin is preferably 35 to 100% by mass, more preferably 50 to 100% by mass, still more preferably relative to the total amount (100% by mass) of the active ingredients of the adhesive composition (x). It is 60 to 98% by mass, more preferably 70 to 95% by mass.
  • the pressure-sensitive adhesive composition (x) when the pressure-sensitive adhesive composition (x) contains a pressure-sensitive adhesive resin having a functional group, the pressure-sensitive adhesive composition (x) preferably further contains a crosslinking agent.
  • the said crosslinking agent reacts with the adhesive resin which has a functional group, and bridge
  • crosslinking agent examples include an isocyanate crosslinking agent, an epoxy crosslinking agent, an aziridine crosslinking agent, and a metal chelate crosslinking agent. These crosslinking agents may be used independently and may use 2 or more types together. Among these crosslinking agents, an isocyanate-based crosslinking agent is preferable from the viewpoints of increasing cohesive force and improving adhesive force and availability.
  • the content of the crosslinking agent is appropriately adjusted depending on the number of functional groups that the adhesive resin has, but is preferably 0.01 to 10 parts by mass with respect to 100 parts by mass of the adhesive resin having a functional group, The amount is more preferably 0.03 to 7 parts by mass, still more preferably 0.05 to 5 parts by mass.
  • the pressure-sensitive adhesive composition (x) may further contain a tackifier from the viewpoint of further improving the adhesive strength.
  • the “tackifier” is a component that assists in improving the adhesive strength of the above-mentioned adhesive resin, and refers to an oligomer having a mass average molecular weight (Mw) of less than 10,000. It is distinguished from a functional resin.
  • the mass average molecular weight (Mw) of the tackifier is preferably 400 to 10000, more preferably 500 to 8000, and still more preferably 800 to 5000.
  • tackifiers include rosin resins, terpene resins, styrene resins, and copolymerization of C5 fractions such as pentene, isoprene, piperine, and 1,3-pentadiene produced by thermal decomposition of petroleum naphtha. And C9 petroleum resin obtained by copolymerizing C9 fractions such as indene generated by thermal decomposition of petroleum naphtha and vinyltoluene, and hydrogenated resins obtained by hydrogenating these.
  • the softening point of the tackifier is preferably 60 to 170 ° C, more preferably 65 to 160 ° C, and still more preferably 70 to 150 ° C.
  • the “softening point” of the tackifier means a value measured according to JIS K2531.
  • a tackifier may be used independently and may use together 2 or more types from which a softening point and a structure differ. And when using 2 or more types of several tackifier, it is preferable that the weighted average of the softening point of these several tackifier belongs to the said range.
  • the content of the tackifier is preferably 0.01 to 65% by mass, more preferably 0.1 to 50% by mass, based on the total amount (100% by mass) of the active ingredients of the adhesive composition (x). More preferably, it is 1 to 40% by mass, and still more preferably 2 to 30% by mass.
  • the pressure-sensitive adhesive composition (x) contains an additive for pressure-sensitive adhesives used for general pressure-sensitive adhesives in addition to the above-mentioned additives, as long as the effects of the present invention are not impaired. You may do it.
  • an adhesive additive include antioxidants, softeners (plasticizers), rust inhibitors, pigments, dyes, retarders, reaction accelerators (catalysts), ultraviolet absorbers, antistatic agents, and the like. Is mentioned.
  • These pressure-sensitive adhesive additives may be used alone or in combination of two or more.
  • each pressure-sensitive adhesive additive is preferably 0.0001 to 20 parts by mass, more preferably 0.001 to 100 parts by mass of the adhesive resin. ⁇ 10 parts by mass.
  • a 1st adhesive layer (X1) and a 2nd adhesive layer (X2) are non-expandable adhesive layers. Therefore, the content of the expandable particles in the pressure-sensitive adhesive composition (x), which is a material for forming the first pressure-sensitive adhesive layer (X1) and the second pressure-sensitive adhesive layer (X2), is preferably as small as possible.
  • the total amount (100% by mass) of the active ingredient of the pressure-sensitive adhesive composition (x), or the total mass of the first pressure-sensitive adhesive layer (X1) and the second pressure-sensitive adhesive layer (X2) ( 100% by mass), preferably less than 1% by mass, more preferably less than 0.1% by mass, still more preferably less than 0.01% by mass, and still more preferably less than 0.001% by mass.
  • a release material may be further laminated on the pressure-sensitive adhesive surfaces of the first pressure-sensitive adhesive layer (X1) and the second pressure-sensitive adhesive layer (X2).
  • a release sheet that has been subjected to a double-sided release process a release sheet that has been subjected to a single-sided release process, or the like is used. Examples include a release material coated on a release material substrate.
  • Examples of the base material for the release material include papers such as high-quality paper, glassine paper, and kraft paper; polyester resin films such as polyethylene terephthalate resin, polybutylene terephthalate resin, and polyethylene naphthalate resin; and olefins such as polypropylene resin and polyethylene resin.
  • a plastic film such as a resin film;
  • release agent examples include silicone-based resins, olefin-based resins, isoprene-based resins, rubber-based elastomers such as butadiene-based resins, long-chain alkyl-based resins, alkyd-based resins, and fluorine-based resins.
  • the thickness of the release material is not particularly limited, but is preferably 10 to 200 ⁇ m, more preferably 25 to 170 ⁇ m, and still more preferably 35 to 80 ⁇ m.
  • the manufacturing method of the present invention is a method for manufacturing a semiconductor chip from a semiconductor wafer using the above-mentioned adhesive sheet, and includes the following steps (1) to (3).
  • Step (1) A step of sticking the pressure-sensitive adhesive surface of the first pressure-sensitive adhesive layer (X1) to the hard support and sticking the pressure-sensitive adhesive surface of the second pressure-sensitive adhesive layer (X2) to the surface of the semiconductor wafer.
  • Step (2) A step of dividing the semiconductor wafer to obtain a plurality of semiconductor chips.
  • Step (3) The interface between the hard support and the first pressure-sensitive adhesive layer (X1) while the expandable particles are expanded and the plurality of semiconductor chips on the second pressure-sensitive adhesive layer (X2) are adhered. Separating with P.
  • the semiconductor chip manufacturing method of the present invention can be applied to the so-called stealth dicing method, and can also be applied to the tip dicing method.
  • the production method of one embodiment of the present invention preferably further includes the following step (4), and more preferably includes the following steps (4) to (6).
  • Step (4) After separation from the hard support in Step (3), the back surface opposite to the circuit surface of the plurality of semiconductor chips is formed with a base film, an adhesive layer and / or an adhesive layer. A step of removing the pressure-sensitive adhesive sheet from the semiconductor chip after being attached to the transfer tape.
  • Step (5) a step of stretching the transfer tape in the MD direction to widen the interval between the plurality of semiconductor chips.
  • Step (6) A step of separating a plurality of semiconductor chips from the transfer tape to obtain a semiconductor chip.
  • FIG. 2 is a schematic cross-sectional view in steps (1) to (3) of the semiconductor chip manufacturing method of the present invention
  • FIG. 3 is a schematic cross-sectional view in steps (4) to (6).
  • steps (1) to (4) will be described with reference to FIGS. 2 and 3 as appropriate.
  • FIG. 2A is a schematic cross-sectional view in step (1) showing a state in which the semiconductor wafer 60 is stuck to the hard support 50 using the adhesive sheet 1a shown in FIG.
  • the adhesive surface of the first adhesive layer (X1) of the adhesive sheet 1a is attached to the hard support 50, and the circuit of the semiconductor wafer 60 is formed on the adhesive surface of the second adhesive layer (X2). It is preferable to affix to the circuit surface 61 made.
  • FIG. 2A is a schematic cross-sectional view in step (1) showing a state in which the semiconductor wafer 60 is stuck to the hard support 50 using the adhesive sheet 1a shown in FIG.
  • the hard support is preferably attached to the entire pressure-sensitive adhesive surface of the first pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet. Therefore, the hard support is preferably plate-shaped. Moreover, it is preferable that the area of the surface of the hard support body affixed with the 1st adhesive layer (X1) is more than the area of the adhesive surface of a 1st adhesive layer (X1), as shown in FIG.
  • Examples of the material constituting the hard support include, for example, metal materials such as SUS; non-metallic inorganic materials such as glass and silicon wafers; epoxy resins, ABS resins, acrylic resins, engineering plastics, super engineering plastics, polyimide resins, polyamideimides Examples thereof include resin materials such as resins; composite materials such as glass epoxy resins, and among these, SUS, glass, and silicon wafers are preferable.
  • Examples of engineering plastics include nylon, polycarbonate (PC), and polyethylene terephthalate (PET).
  • Examples of super engineering plastics include polyphenylene sulfide (PPS), polyether sulfone (PES), and polyether ether ketone (PEEK).
  • the thickness of the hard support is preferably 20 ⁇ m or more and 50 mm or less, and more preferably 60 ⁇ m or more and 20 mm or less.
  • the Young's modulus of the hard support is preferably 1.0 GPa or more, more preferably 5.0 GPa or more, still more preferably 10 GPa or more, and still more preferably 20 GPa or more, from the viewpoint of improving chip crack prevention performance.
  • the Young's modulus of the hard support is a value measured at room temperature (25 ° C.) in accordance with the static Young's modulus test method of JIS Z2280: 1993.
  • the surface of the semiconductor wafer attached to the adhesive surface of the second adhesive layer (X2) is preferably a circuit surface on which a circuit is formed.
  • the surface of the semiconductor wafer opposite to the circuit surface (hereinafter also referred to as “back surface”) is ground in the next process to divide the semiconductor wafer into a plurality of semiconductor chips. Etc. are preferably flat surfaces which are not formed.
  • the semiconductor wafer used in the manufacturing method of the present invention is obtained by forming a circuit on one surface of a semiconductor wafer composed of silicon, SiC (silicon carbide), gallium, arsenic, or the like by an etching method, a lift-off method, or the like. Can do.
  • a process for forming a modified region inside the semiconductor wafer for application to the stealth dicing method, or a groove in the thickness direction from the surface of the semiconductor wafer for application to the previous dicing method is formed. It is necessary to perform processing. You may affix the circuit surface of the semiconductor wafer which performed these processes previously on the adhesion surface of a 2nd adhesive layer (X2). In addition, after the circuit surface of the semiconductor wafer that has not been subjected to these treatments is attached to the adhesive surface of the second pressure-sensitive adhesive layer (X2) in this step, these treatments may be performed from the back surface of the semiconductor wafer. .
  • the process of forming the modified region inside the semiconductor wafer for application to the stealth dicing method is performed after the circuit surface of the semiconductor wafer is attached to the adhesive surface of the second adhesive layer (X2).
  • the semiconductor wafer is attached to the hard support via the adhesive sheet by applying the modified region forming process after the circuit surface of the semiconductor wafer is attached to the adhesive surface of the second adhesive layer (X2).
  • the warp of the semiconductor wafer that can occur after the modified region is formed can be effectively suppressed.
  • the process for forming a modified region inside a semiconductor wafer is to use a laser with a laser beam incident oblique surface on the back side of the semiconductor wafer and a focusing point inside the workpiece.
  • a crack line extending from the modified region in the thickness direction of the semiconductor wafer is also formed.
  • the treatment for forming grooves in the thickness direction from the surface of the semiconductor wafer for application to the prior dicing method may be performed before or after the semiconductor wafer is bonded to the second pressure-sensitive adhesive layer (X2). May be.
  • a method of forming a groove in the thickness direction from the surface of the semiconductor wafer includes a method of performing dicing using a known wafer dicing apparatus or the like.
  • the step (1) may be performed under a temperature condition that is lower than the expansion start temperature (t) of the thermally expandable particles. Is preferably performed in an environment of 0 to 80 ° C. (when the expansion start temperature (t) is 60 to 80 ° C., in an environment lower than the expansion start temperature (t)).
  • Step (2) is a step of dividing the semiconductor wafer to obtain a plurality of semiconductor chips.
  • a method for dividing the semiconductor wafer a method of grinding the back surface of the semiconductor wafer and dividing the semiconductor wafer into a plurality of semiconductor chips is preferable.
  • FIG. 2B is a schematic cross-sectional view when the back surface 62 of the semiconductor wafer 60 is ground and separated into a plurality of semiconductor chips.
  • a semiconductor wafer having a modified region is ground on a back surface on which a circuit opposite to the circuit surface is not formed, and the semiconductor wafer is divided into a plurality of semiconductor chips. It becomes the process of obtaining.
  • the modified region is an embrittled portion of the semiconductor wafer, so that the thickness of the semiconductor wafer is reduced by grinding the back surface of the semiconductor wafer, and the grinding force is applied to the semiconductor wafer. Is a region that becomes a starting point of being broken and separated into semiconductor chips. As a result, the semiconductor wafer is divided along the modified region and the crack line and separated into a plurality of semiconductor chips.
  • this step is performed by grinding a semiconductor wafer having a groove formed in the thickness direction in advance on a back surface on which a circuit opposite to the circuit surface is not formed, thereby dividing the semiconductor wafer.
  • the groove formed in the semiconductor wafer is a groove having a depth shallower than the thickness of the semiconductor wafer.
  • the semiconductor wafer is ground and thinned to at least the position reaching the bottom of the groove, so that the groove becomes a notch penetrating the wafer, and the semiconductor wafer is divided into a plurality of semiconductor chips. It is separated.
  • the first pressure-sensitive adhesive layer (X1) to be attached to the hard support does not need to contain expandable particles, and thus the semiconductor wafer is sufficiently fixed to the hard support.
  • back surface grinding for dividing the semiconductor wafer can be performed.
  • adverse effects such as chipping of the end of the obtained semiconductor chip can be effectively suppressed, and the yield in manufacturing the semiconductor chip can be improved.
  • the step (2) may be performed under a temperature condition that is lower than the expansion start temperature (t) of the thermally expandable particles. Is preferably performed in an environment of 0 to 80 ° C. (when the expansion start temperature (t) is 60 to 80 ° C., in an environment lower than the expansion start temperature (t)).
  • Step (3) the expandable particles are expanded, and the interface between the hard support and the first pressure-sensitive adhesive layer (X1) while the plurality of semiconductor chips on the second pressure-sensitive adhesive layer (X2) are adhered.
  • FIG. 2C shows a state where the expandable particles in the expandable base material layer (Y1) are expanded and separated at the interface P between the hard support 50 and the first pressure-sensitive adhesive layer (X1). .
  • FIG. 2 (c) in this step, when the expandable particles are expanded, the plurality of semiconductor chips on the second pressure-sensitive adhesive layer (X2) are stuck on the interface P from the hard support 50.
  • the method for expanding the expandable particles is appropriately selected according to the type of the expandable particles.
  • heat treatment is performed at a temperature equal to or higher than the expansion start temperature (t) of the heat-expandable particles to expand the heat-expandable particles.
  • the “temperature higher than the expansion start temperature (t)” is preferably “expansion start temperature (t) + 10 ° C.” or higher and “expansion start temperature (t) + 60 ° C.” or lower. It is more preferable that the temperature is not less than “temperature (t) + 15 ° C.” and not more than “expansion start temperature (t) + 40 ° C.”.
  • the pressure-sensitive adhesive sheet having the expandable base material layer (Y1) containing the expandable particles By forming irregularities on the adhesive surface of (X1), it is adjusted so that it can be separated at the interface P between the hard support and the first adhesive layer (X1). Therefore, it is possible to suppress the contamination of the hard support such that a part of the first pressure-sensitive adhesive layer (X1) remains on the surface of the hard support after the separation, and the washing process of the hard support can be omitted. Can be improved.
  • step (4) after separating from the hard support in the step (3), the back surface opposite to the circuit surface of the plurality of semiconductor chips, the base film, the pressure-sensitive adhesive layer and / or the adhesive layer are provided.
  • the adhesive sheet is removed from the semiconductor chip after being attached to the transfer tape.
  • FIG. 3A shows a state where the adhesive sheet 1 a is removed from the semiconductor chip 70 after the back surfaces 72 of the plurality of semiconductor chips 70 are attached to the transfer tape 80.
  • the second pressure-sensitive adhesive layer (X2) of the pressure-sensitive adhesive sheet 1a is a layer formed from an energy ray-curable pressure-sensitive adhesive composition
  • the second pressure-sensitive adhesive layer is irradiated with energy rays.
  • the adhesive strength of (X2) may be reduced and the adhesive sheet 1a may be removed.
  • the transfer tape 80 is designed to be stretched by stretching in the MD direction, and is an adhesive tape designed to widen the interval between the plurality of semiconductor chips 70.
  • the transfer tape used in one embodiment of the present invention has a base film and a pressure-sensitive adhesive layer and / or an adhesive layer. Specific configurations include, for example, the following (1) to (3) ). (1) A transfer tape obtained by laminating a base film and an adhesive layer in this order. (2) A transfer tape obtained by laminating a base film and an adhesive layer in this order. (3) A transfer tape formed by laminating a base film, a pressure-sensitive adhesive layer, and an adhesive layer in this order.
  • FIG. 3 the case where the transfer tape of the aspect of the above (1) is used is shown.
  • the adhesive layer 82 of the transfer tape 80 formed by laminating the base film 81 and the adhesive layer 82 in this order The state which stuck the back surface 72 of the several semiconductor chip 70 is shown.
  • the base film constituting the transfer tape for example, polyvinyl chloride resin, polyester resin (polyethylene terephthalate, etc.), acrylic resin, polycarbonate resin, polyethylene resin, polypropylene resin, acrylonitrile / butadiene / styrene resin, polyimide resin, polyurethane resin And a resin film containing one or more kinds of resins selected from polystyrene resins and the like.
  • the base film constituting the transfer tape preferably contains a thermoplastic elastomer, a rubber-based material, etc., and more preferably contains a thermoplastic elastomer.
  • thermoplastic elastomer examples include urethane elastomers, olefin elastomers, vinyl chloride elastomers, polyester elastomers, styrene elastomers, acrylic elastomers, and amide elastomers.
  • the base film may have a single layer configuration or a multilayer configuration in which two or more layers are laminated.
  • the base film may further contain various additives such as pigments, dyes, flame retardants, plasticizers, antistatic agents, lubricants, fillers and the like.
  • the thickness of the base film constituting the transfer tape is preferably 20 to 300 ⁇ m, more preferably 30 to 250 ⁇ m, still more preferably 40 to 200 ⁇ m.
  • the pressure-sensitive adhesive layer constituting the transfer tape is a layer formed from the pressure-sensitive adhesive composition (x) which is a material for forming the first pressure-sensitive adhesive layer (X1) and the second pressure-sensitive adhesive layer (X2).
  • the energy ray curable pressure-sensitive adhesive layer formed from the above-mentioned energy ray curable pressure-sensitive adhesive composition which is suitable as a material for forming the second pressure-sensitive adhesive layer (X2), is preferable.
  • the pressure-sensitive adhesive layer constituting the transfer tape is an energy ray curable pressure-sensitive adhesive layer
  • the workability of the pickup step in step (6) is improved.
  • the energy rays when removing the pressure sensitive adhesive sheet in step (4) are such that the adhesive strength of the energy ray curable pressure sensitive adhesive layer of the transfer tape does not decrease. It is preferable to irradiate from the adhesive sheet side.
  • the thickness of the pressure-sensitive adhesive layer constituting the transfer tape is preferably 1 to 100 ⁇ m, more preferably 3 to 50 ⁇ m, still more preferably 5 to 40 ⁇ m.
  • the adhesive layer constituting the transfer tape is preferably a layer formed from an adhesive composition containing a binder resin and a thermosetting component.
  • the binder resin include acrylic resins, polyester resins, urethane resins, acrylic urethane resins, silicone resins, rubber polymers, phenoxy resins, and the like, and acrylic resins are preferable.
  • the thermosetting component an epoxy resin and a thermosetting agent are preferably included.
  • the thickness of the adhesive layer constituting the transfer tape is preferably 1 to 100 ⁇ m, more preferably 5 to 75 ⁇ m, still more preferably 5 to 50 ⁇ m.
  • Step (5) is a step of extending the transfer tape in the MD direction and widening the interval between the plurality of semiconductor chips. As shown in FIG. 3B, the transfer tape 80 is stretched in the MD direction to widen the interval between the plurality of semiconductor chips 70, so that the pickup property in the next process is improved.
  • Step (6) is a step of obtaining a semiconductor chip by separating a plurality of semiconductor chips from the transfer tape.
  • FIG. 3C shows a state in which a plurality of semiconductor chips 70 are obtained by picking up in this step using the transfer tape of the aspect (1).
  • the transfer tape used has an energy ray-curable pressure-sensitive adhesive layer, the adhesive force is reduced by irradiating the energy ray, and the pickup property can be improved. In this case, it is preferable to irradiate the energy rays from the base film side.
  • the adhesive layer remains firmly adhered to the back surface of the semiconductor chip at the time of picking up in this step, and the semiconductor chip with the adhesive layer is removed. And the bonding process can be omitted.
  • the formed heat-expandable base material layer (Y1) was 5 mm long ⁇ 30 mm wide ⁇ 200 ⁇ m thick, and the test piece was prepared by removing the release material.
  • a dynamic viscoelasticity measuring device (TA Instruments, product name “DMAQ800”), test start temperature 0 ° C., test end temperature 300 ° C., temperature increase rate 3 ° C./min, frequency 1 Hz, amplitude 20 ⁇ m Under the conditions, the storage elastic modulus E ′ of the test sample at a predetermined temperature was measured.
  • ⁇ Storage shear modulus G ′ of the first pressure-sensitive adhesive layer (X1) and the second pressure-sensitive adhesive layer (X2)> A sample prepared by cutting the formed first pressure-sensitive adhesive layer (X1) and second pressure-sensitive adhesive layer (X2) into a circle having a diameter of 8 mm, removing the release material, and superposing them to obtain a thickness of 3 mm It was.
  • a torsional shear method under conditions of a test start temperature of 0 ° C., a test end temperature of 300 ° C., a heating rate of 3 ° C./min, and a frequency of 1 Hz was used to measure the storage shear modulus G ′ of the test sample at a given temperature.
  • ⁇ Probe tack value> A base material layer to be measured was cut into a square with a side of 10 mm, and then allowed to stand for 24 hours in an environment of 23 ° C. and 50% RH (relative humidity) was used as a test sample. Using a tacking tester (manufactured by Nippon Special Instrument Co., Ltd., product name “NTS-4800”) in an environment of 23 ° C. and 50% RH (relative humidity), the probe tack value on the surface of the test sample was measured according to JIS. It measured based on Z0237: 1991.
  • a stainless steel probe having a diameter of 5 mm is brought into contact with the surface of the test sample at a contact load of 0.98 N / cm 2 for 1 second, and then the probe is moved at a speed of 10 mm / sec. The force required to separate from the surface was measured, and the obtained value was used as the probe tack value of the test sample.
  • Acrylic copolymer (ii): n-butyl acrylate (BA) / methyl methacrylate (MMA) / 2-hydroxyethyl acrylate (HEA) / acrylic acid 86.0 / 8.0 / 5.0 / 1.
  • 1st adhesive layer (X1) To 100 mass parts of solid content of the said acrylic copolymer (i) which is adhesive resin, said isocyanate type crosslinking agent (i) 5.0 mass parts ( (Solid content ratio) was mixed, diluted with toluene, and stirred uniformly to prepare a pressure-sensitive adhesive composition having a solid content concentration (active ingredient concentration) of 25% by mass. And the said adhesive composition is apply
  • the 1st adhesive layer (X1) which is an agent layer was formed.
  • the storage shear modulus G ′ (23) of the first pressure-sensitive adhesive layer (X1) at 23 ° C. was 2.5 ⁇ 10 5 Pa.
  • 2nd adhesive layer (X2) To 100 mass parts of solid content of the said acrylic copolymer (ii) which is adhesive resin, 0.8 mass part of said isocyanate type crosslinking agent (i) ( (Solid content ratio) was mixed, diluted with toluene, and stirred uniformly to prepare an adhesive composition having a solid content concentration (active ingredient concentration) of 25 mass%. And the said adhesive composition is apply
  • the adhesive force of the 2nd adhesive layer (X2) measured based on the said method was 1.0 N / 25mm. Since it was clear that the second pressure-sensitive adhesive layer (X2) and the first pressure-sensitive adhesive layer (X1) had a probe tack value of 50 mN / 5 mm ⁇ or more, measurement of the probe tack value was omitted.
  • PET polyethylene terephthalate
  • the resin composition is applied to the surface of the release agent layer of the light release film to form a coating film, and the coating film is formed into 100. Drying was performed at ° C for 120 seconds to similarly form a 50 ⁇ m thick expandable base material layer (Y1).
  • the storage elastic modulus and probe tack value in each temperature of an expansible base material layer (Y1) were measured. The measurement results were as follows. -Storage elastic modulus E '(23) at 23 ° C.
  • peel force (F 0) and (F 1) measured in accordance with the following methods.
  • peeling is performed at the interface P between the silicon wafer and the first pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet at a pulling speed of 300 mm / min according to JIS Z0237: 2000 by a 180 ° peeling method.
  • the peeling force measured at the time of the measurement was defined as “peeling force (F 0 )”.
  • peel force (F 1 ) Remove the heavy release film of the prepared pressure-sensitive adhesive sheet, stick the exposed first pressure-sensitive adhesive layer (X1) to a silicon wafer, heat at 240 ° C. for 3 minutes, and heat in the expandable base material layer (Y1) The expandable particles were expanded. Thereafter, in the same manner as the measurement of the peel force (F 0 ) described above, the peel force measured when peeled at the interface P between the silicon wafer and the first pressure-sensitive adhesive layer (X1) of the pressure-sensitive adhesive sheet under the above conditions. was defined as “peeling force (F 1 )”.
  • the adhesive sheet (I) is completely separated from the silicon wafer when the adhesive sheet is fixed with the upper chuck of the universal tensile testing machine and cannot be fixed. The measurement was terminated, and the peeling force (F 1 ) at that time was set to “0 mN / 25 mm”.
  • Example 1 ⁇ Step (1)> The pressure-sensitive adhesive sheet produced in Production Example 2 was cut into a square size of 230 mm ⁇ 230 mm. Using a tape grinder for back grind (manufactured by Lintec Corporation, device name “RAD-3510F / 12”), the heavy release film of the cut adhesive sheet was peeled off, and the first adhesive layer (X1) exposed was exposed. The adhesive surface was attached to a hard support (material: silicon, thickness: 725 ⁇ m, Young's modulus: 30 GPa).
  • a hard support material: silicon, thickness: 725 ⁇ m, Young's modulus: 30 GPa
  • the light release film is also peeled off, and a semiconductor wafer having a circuit surface with a circuit formed on one surface on the adhesive surface of the exposed second pressure-sensitive adhesive layer (X2) (diameter 200 mm, thickness 725 ⁇ m) The circuit surface of the disk shape was attached. Then, using a stealth laser irradiation device (manufactured by Tokyo Seimitsu Co., Ltd., device name “ML300PlusWH”), stealth laser irradiation is performed from the back surface opposite to the circuit surface of the semiconductor wafer, and a modified region is formed inside the semiconductor wafer. Formed.
  • a stealth laser irradiation device manufactured by Tokyo Seimitsu Co., Ltd., device name “ML300PlusWH”
  • Step (2)> Using a polish grinder (manufactured by Tokyo Seimitsu Co., Ltd., device name “PG3000RM”), the back surface of the semiconductor wafer where the circuit is not formed is ground while being exposed to ultrapure water, and the semiconductor wafer is divided. Chips were separated into individual semiconductor chips with a thickness of 20 ⁇ m.
  • the transfer tape on which a plurality of semiconductor chips were attached was installed in an expanding apparatus capable of biaxial stretching.
  • the expanding device has an X-axis direction (positive direction is + X-axis direction, negative direction is -X-axis direction) and Y-axis direction (positive direction is + Y-axis direction and negative direction is -Y).
  • holding means for extending in each direction that is, + X-axis direction, -X-axis direction, + Y-axis direction, and -Y-axis direction).
  • the MD direction of the transfer tape is aligned with the X-axis or Y-axis direction, installed in the expanding device, and each side of the transfer tape is gripped by the holding means.
  • the space between the plurality of semiconductor chips attached to the transfer tape was widened.
  • -Number of holding means 5 per side-Stretching speed: 5 mm / sec -Stretching distance: Each side was stretched by 60 mm.
  • UV irradiation device product name “RAD-2000” manufactured by Lintec Corporation
  • UV light is irradiated from the base film side of the transfer tape (light quantity: 500 mJ / cm 2 , illuminance: 220 mW / cm 2 , irradiation speed) : 15 mm / s) to reduce the adhesive strength of the adhesive layer of the transfer tape.
  • the transfer tape light quantity: 500 mJ / cm 2 , illuminance: 220 mW / cm 2 , irradiation speed

Abstract

L'invention concerne un procédé de fabrication d'une puce semi-conductrice qui comprend les étapes suivantes (1) à (3) à l'aide d'une feuille adhésive qui comprend une base (Y) ayant une couche de base extensible (Y1) contenant des particules extensibles et une couche de base non extensible (Y2), et sur des côtés respectifs de la base (Y), une première couche adhésive (X1) dans laquelle des protubérances peuvent se former dans la surface adhésive, du fait de l'extension des particules extensibles, et une seconde couche adhésive (X2). ∙ Étape (1) : une étape de fixation de la première couche adhésive (X1) sur un support dur et de fixation de la seconde couche adhésive (X2) à la surface d'une tranche semi-conductrice. ∙ Étape (2) : une étape d'obtention d'une pluralité de puces semi-conductrices. ∙ Étape (3) : une étape d'extension des particules extensibles et de séparation du support dur de la première couche adhésive (X1) au niveau d'une interface P.
PCT/JP2019/017875 2018-05-07 2019-04-26 Procédé de fabrication de puce semi-conductrice WO2019216262A1 (fr)

Priority Applications (3)

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CN201980030707.8A CN112088421A (zh) 2018-05-07 2019-04-26 半导体芯片的制造方法
KR1020207031816A KR20210006896A (ko) 2018-05-07 2019-04-26 반도체 칩의 제조 방법
JP2020518271A JP7241744B2 (ja) 2018-05-07 2019-04-26 半導体チップの製造方法

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JP2018-089326 2018-05-07
JP2018089326 2018-05-07

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021117695A1 (fr) * 2019-12-11 2021-06-17 リンテック株式会社 Feuille adhésive et procédé de production d'un dispositif à semi-conducteur
WO2022054889A1 (fr) * 2020-09-14 2022-03-17 リンテック株式会社 Feuille adhésive et procédé de production d'un dispositif à semi-conducteur
WO2022071150A1 (fr) * 2020-10-02 2022-04-07 昭和電工マテリアルズ株式会社 Film pour fixation temporaire, produit en couches pour fixation temporaire, et procédé de production de dispositif à semi-conducteur
WO2022138458A1 (fr) * 2020-12-25 2022-06-30 日東電工株式会社 Feuille adhésive absorbant les chocs
WO2024063127A1 (fr) * 2022-09-22 2024-03-28 リンテック株式会社 Feuille adhésive sensible à la pression et procédé de production d'un composant électronique ou d'un dispositif à semi-conducteur

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002121510A (ja) * 2000-10-18 2002-04-26 Nitto Denko Corp エネルギー線硬化型熱剥離性粘着シート、及びこれを用いた切断片の製造方法
JP2003292916A (ja) * 2002-04-08 2003-10-15 Nitto Denko Corp 粘着シートを用いた被着体加工方法
JP2003306653A (ja) * 2002-04-16 2003-10-31 Nitto Denko Corp 電子部品用加熱剥離型粘着シートおよび電子部品の加工方法並びに電子部品
JP2009035635A (ja) * 2007-08-01 2009-02-19 Nitto Denko Corp 非汚染性熱剥離型粘着シート
JP2013203799A (ja) * 2012-03-27 2013-10-07 Nitto Denko Corp 加熱剥離型粘着シート

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010209158A (ja) * 2009-03-06 2010-09-24 Nitto Denko Corp 粘着シート及びそれを用いた半導体ウェハの加工方法
JP5950869B2 (ja) * 2013-06-20 2016-07-13 古河電気工業株式会社 半導体ウエハ表面保護用粘着テープ
JP2017002190A (ja) * 2015-06-10 2017-01-05 リンテック株式会社 加熱剥離性粘着シート

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002121510A (ja) * 2000-10-18 2002-04-26 Nitto Denko Corp エネルギー線硬化型熱剥離性粘着シート、及びこれを用いた切断片の製造方法
JP2003292916A (ja) * 2002-04-08 2003-10-15 Nitto Denko Corp 粘着シートを用いた被着体加工方法
JP2003306653A (ja) * 2002-04-16 2003-10-31 Nitto Denko Corp 電子部品用加熱剥離型粘着シートおよび電子部品の加工方法並びに電子部品
JP2009035635A (ja) * 2007-08-01 2009-02-19 Nitto Denko Corp 非汚染性熱剥離型粘着シート
JP2013203799A (ja) * 2012-03-27 2013-10-07 Nitto Denko Corp 加熱剥離型粘着シート

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021117695A1 (fr) * 2019-12-11 2021-06-17 リンテック株式会社 Feuille adhésive et procédé de production d'un dispositif à semi-conducteur
CN114829529A (zh) * 2019-12-11 2022-07-29 琳得科株式会社 粘合片及半导体装置的制造方法
WO2022054889A1 (fr) * 2020-09-14 2022-03-17 リンテック株式会社 Feuille adhésive et procédé de production d'un dispositif à semi-conducteur
WO2022071150A1 (fr) * 2020-10-02 2022-04-07 昭和電工マテリアルズ株式会社 Film pour fixation temporaire, produit en couches pour fixation temporaire, et procédé de production de dispositif à semi-conducteur
WO2022138458A1 (fr) * 2020-12-25 2022-06-30 日東電工株式会社 Feuille adhésive absorbant les chocs
WO2024063127A1 (fr) * 2022-09-22 2024-03-28 リンテック株式会社 Feuille adhésive sensible à la pression et procédé de production d'un composant électronique ou d'un dispositif à semi-conducteur
WO2024063129A1 (fr) * 2022-09-22 2024-03-28 リンテック株式会社 Feuille adhésive et procédé de décollement
WO2024063126A1 (fr) * 2022-09-22 2024-03-28 リンテック株式会社 Feuille de transfert d'éléments

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JPWO2019216262A1 (ja) 2021-05-27
TWI808170B (zh) 2023-07-11
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JP7241744B2 (ja) 2023-03-17
TW202003771A (zh) 2020-01-16

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