WO2019214483A1 - 一种led灯片 - Google Patents

一种led灯片 Download PDF

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Publication number
WO2019214483A1
WO2019214483A1 PCT/CN2019/084944 CN2019084944W WO2019214483A1 WO 2019214483 A1 WO2019214483 A1 WO 2019214483A1 CN 2019084944 W CN2019084944 W CN 2019084944W WO 2019214483 A1 WO2019214483 A1 WO 2019214483A1
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WIPO (PCT)
Prior art keywords
substrate
terminal
electrically connected
led light
wafer
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PCT/CN2019/084944
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English (en)
French (fr)
Inventor
谢锡龙
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广州市巨宏光电有限公司
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Priority to US16/969,991 priority Critical patent/US20210102668A1/en
Publication of WO2019214483A1 publication Critical patent/WO2019214483A1/zh

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/66—Details of globes or covers forming part of the light source
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V23/00—Arrangement of electric circuit elements in or on lighting devices
    • F21V23/06—Arrangement of electric circuit elements in or on lighting devices the elements being coupling devices, e.g. connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the utility model relates to the technical field of LEDs, in particular to an LED light sheet.
  • ED light source As a kind of semiconductor light-emitting material, ED light source has the advantages of energy saving, environmental protection, good color rendering, stable light emission, etc. Compared with other light sources, it will gradually replace traditional light sources with its advantages of green, high efficiency, reliability and durability.
  • the LED street light is a combination of multiple high-power LED light sources, and is distributed in the form of a planar lattice.
  • the secondary optical light distribution is performed by an external lens or a reflective cup to control the distribution range of the light, and the emitted light becomes a long strip of light along the road. Surface distribution to meet the needs of road lighting.
  • the current LED light sheet due to the planar structure of the wafer, the radiation area of the light is limited.
  • the LED package needs to be re-wired to cause the LED light.
  • the film is bulky and the pins are easy to break.
  • the object of the present invention is to provide an LED light sheet which has a small volume and a large irradiation angle.
  • An LED lamp piece comprises a substrate, a wafer and a sealant, wherein the main body of the substrate is a high temperature resistant insulating material, the bottom surface of the substrate is provided with a positive electrode joint and a negative electrode joint, and the top surface of the substrate is provided with a first terminal electrically connected to the positive electrode joint And a second terminal electrically connected to the negative electrode connector; the wafer is electrically connected to the first terminal and the second terminal; and the sealing material is of a double hump type.
  • the wafer is electrically connected to the first terminal and the second terminal through a bonding wire.
  • the wafer is a flip-chip structure and is directly electrically connected to the first terminal and the second terminal.
  • the positive electrode tab and the negative electrode tab are both strip-shaped and arranged in parallel.
  • both the positive electrode tab and the negative electrode tab penetrate through the bottom surface of the substrate.
  • the size of the substrate is (3.5-5) ⁇ 5.0 mm.
  • the ratio of the length to the width of the sealant is (2.8-3.0): (1.6-1.8): 1.
  • the ratio of the length of the sealant to the center of the hump is (1.6-1.7): 1.
  • the substrate is a ceramic substrate.
  • the utility model provides an LED light piece, wherein the LED light piece adopts an insulating substrate and a positive electrode and a negative electrode line which are internally connected with a top surface of the bottom surface, so that the LED light piece can be used without using a pin, thereby greatly reducing the LED light piece.
  • the volume increases the processing convenience and reduces the processing cost; the LED lamp piece adopts the form of double hump, so that the irradiation range of the LED lamp piece in length and width is greatly increased, and the commercial use is improved. Convenience.
  • Figure 1 is a schematic plan view of the utility model
  • Figure 2 is a schematic front view of the utility model
  • FIG. 3 is a continuous schematic view of a substrate and a wafer of the present invention.
  • FIG. 4 is a schematic structural view of a bottom surface of a substrate of the present invention.
  • Figure 5 is a schematic view of the illumination angle of the present invention.
  • Figure 6 is a schematic view of the dimensions of the present invention.
  • each reference numeral 1, a substrate; 11, a positive electrode; 12, a negative electrode; 13, a first terminal; 14, a second terminal; 2, a wafer;
  • An LED lamp piece as shown in FIGS. 1 and 2, comprises a substrate 1, a wafer 2 and a sealant 3.
  • the main body of the substrate 1 is a high temperature resistant insulating material.
  • the bottom surface of the substrate 1 is provided.
  • a positive electrode tab 11 and a negative electrode tab 12 the top surface of the ceramic substrate 1 is provided with a first terminal 13 electrically connected to the positive electrode tab 11 and a second terminal 14 electrically connected to the negative electrode tab 12; the wafer 2 and the first terminal 13, The second terminal 14 is electrically connected; the sealant 3 is of a double hump type.
  • the light of the wafer 2 can expand the irradiation area by the scattering action of the double hump type sealant 3, so that the irradiation performance of the LED lamp piece can be greatly improved.
  • the LED lamp has an illumination angle of 130-150° along the lateral direction of the double hump, which can effectively solve the problem of limited irradiation range in commercial illumination, and does not require an additional mirror.
  • the high-temperature resistant insulating substrate 1 is matched with the wiring line extending from the top surface of the substrate 1 to the bottom surface, so that the use of the stitches can be effectively avoided, so that the LED light sheet has a smaller volume and is more easily connected to other carriers.
  • the LED lamp piece is suitable for three package structures of vertical, planar and flip-chip.
  • the wafer 2 is fixed on the ceramic substrate 1, and the bonding wire is soldered on the wafer 2, and the wafer 2 is bonded.
  • the positive electrode is electrically connected to the first terminal 13
  • the negative electrode of the wafer 2 is electrically connected to the second terminal 14 .
  • the positive electrode of the wafer 2 is directly electrically connected to the first terminal 13
  • the negative electrode is directly connected to the second terminal.
  • the terminal 14 is electrically connected to save the wire bonding process.
  • the positive electrode tab 11 and the negative electrode tab 12 are arranged in a strip shape and parallel to each other, so as to be directly used after the components are attached, and the operation process is simpler. Furthermore, the positive electrode tab 11 and the negative electrode tab 12 both penetrate the bottom surface of the substrate 1, that is, the electrical components can be joined at both ends of the LED light sheet.
  • the substrate 1 of the LED lamp sheet is made of a high temperature resistant insulating material, which preferably has a high resistance to deformation.
  • the substrate 1 may include, but is not limited to, a ceramic substrate 1, a high density polyethylene substrate 1, and a polymelamine substrate 1. .
  • the double hump structure of the seal 3 of the LED lamp sheet preferably satisfies the following dimensional relationship: the ratio of the length to the width of the sealant 3 is (2.8-3.0): (1.6-1.8): 1. The ratio of the length of the sealant 3 to the center of the hump is (1.6-1.7): 1.
  • the sealant 3 at this size has better scattering properties and better packaging function.
  • the size of the substrate 1 is preferably (3.5 - 5) mm ⁇ 5.0 mm.
  • the LED light sheet has a longitudinal illumination angle of 90-110° and a lateral illumination angle of 130-150°.
  • Figure 6 provides an example of the size of a specific LED light sheet: the size of the substrate 1 is 3.6 mm ⁇ 5.0 mm, and the length, width and height of the seal 3 are 4.9 mm ⁇ 2.94 mm ⁇ 2.25 mm, and the double hump center of the seal 3 The distance is 1.89 mm; the height of the sealant 3 is 1.77 mm.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Fastening Of Light Sources Or Lamp Holders (AREA)

Abstract

本实用新型公开了一种LED灯片，包括基板、晶片和封胶，所述基板的主体为耐高温绝缘材料，基板的底面设有正极接头和负极接头，所述基板的顶面设有与正极接头电性连接的第一端子和与负极接头电性连接的第二端子；所述晶片与第一端子、第二端子电性连接；所述封胶呈双驼峰型。该LED灯片不使用针脚、占体积小；该LED灯片辐照区域大，提高了其商业使用的便利性。

Description

一种LED灯片 技术领域
本实用新型涉及LED技术领域，尤其涉及一种LED灯片。
背景技术
ED光源作为一种半导体发光材料，具有节能、环保、显色性好、发光稳定等优点，与其它光源相比，以其绿色、高效、可靠、耐用的优势将逐步替代传统光源。LED路灯是多个大功率LED光源组合，并采用平面点阵形式分布，通过外置透镜或反射杯进行二次光学配光，控制光线的分布范围，发出的光成为一个长条形光带沿路面分布，满足道路照明的需求。
然后目前的LED灯片，因晶片的平面结构，灯光的辐射区域有限，当用作路灯时需在配合外反光镜以实现大范围的光照；另外，LED封装时需要再接线针脚，造成LED灯片体积大、针脚易断等问题。
实用新型内容
为了克服现有技术的不足，本实用新型的目的在于提供一种占体积小、辐照角度大的LED灯片。
本实用新型的目的采用如下技术方案实现：
一种LED灯片，包括基板、晶片和封胶，基板的主体为耐高温绝缘材料，基板的底面设有正极接头和负极接头，基板的顶面设有与正极接头电性连接的第一端子和与负极接头电性连接的第二端子；晶片与第一端子、第二端子电性连接；封胶呈双驼峰型。
进一步地，晶片通过焊线与第一端子、第二端子电性连接。
进一步地，晶片为倒装结构，直接与第一端子、第二端子电性连接。
进一步地，正极接头和负极接头均为条状且平行设置。
进一步地，正极接头和负极接头均贯通基板底面。
进一步地，基板的尺寸为(3.5-5)×5.0mm。
进一步地，封胶的长宽之比为(2.8-3.0)：(1.6-1.8):1。
进一步地，封胶的长与驼峰的中心距之比为(1.6-1.7):1。
进一步地，基板为陶瓷基板。
相比现有技术，本实用新型的有益效果在于：
本实用新型提供一种LED灯片，该LED灯片采用绝缘基板和底面顶面内置连通的正极和负极线路，从而使该LED灯片可以不采用针脚，极大地减小了该LED灯片的体积，增大了加工方便性和减少了加工成本；该LED灯片采用双驼峰的形式，使得该LED灯片在长度和宽度上的辐照范围都得以较大地增长，提高了商业使用时的便利性。
附图说明
图1为本实用新型的俯视结构示意图；
图2为本实用新型的正视结构示意图；
图3为本实用新型的基板与晶片的连续示意图；
图4为本实用新型的基板的底面的结构示意图；
图5为本实用新型的发光角度示意图；
图6为本实用新型的尺寸示意图。
图中，各附图标记：1、基板；11、正极接头；12、负极接头；13、第一端子；14、第二端子；2、晶片；3、封胶。
具体实施方式
下面，结合附图以及具体实施方式，对本实用新型做进一步描述，需要说明的是，在不相冲突的前提下，以下描述的各实施例之间或各技术特征之间可以任意组合形成新的实施例。
一种LED灯片，如图1和2所示，包括基板1、晶片2和封胶3，基板1的主体为耐高温绝缘材料，如图3和图4所示，基板1的底面设有正极接头11和负极接头12，陶瓷基板1的顶面设有与正极接头11电性连接的第一端子13和与负极接头12电性连接的第二端子14；晶片2与第一端子13、第二端子14电性连接；封胶3呈双驼峰型。
本实用新型提供的LED灯片，其晶片2的光可通过双驼峰型的封胶3的散射作用而扩大辐照区域，使该LED灯片的辐照性能得以大幅度提高。如图5所示，该LED灯片沿双驼峰的横向的发光角度可达130-150°，能有效解决商业照明中辐照幅度有限的问题，不需要另配反光镜。通过耐高温的绝缘基板1、配合由基板1顶面延伸至底面的接线线路，从而可有效避免使用针脚，以使该LED灯片具有更小的体积，更易连接到其它载体上。
该LED灯片适用于垂直、平面和倒装的三种封装结构，其中，当使用垂直和平面封装时，将晶片2固定在陶瓷基板1上，再在晶片2上焊接焊线，将晶片2的正极与第一端子13电性连接，晶片2的负极与第二端子14电性连接；当使用倒装封装时，晶片2的正极直接与第一端子13电性连接，负极直接与第二端子14电性连接，可以省掉焊线过程。
该LED灯片，为了提高其可连接性，正极接头11和负极接头12都设置为条状且相互平行，以贴合元件后可直接使用，操作工艺更加简单。更进一步地，正极接头11和负极接头12均贯通基板1底面，即可以在LED灯片的两端接合电性部件。
该LED灯片的基板1由耐高温绝缘材料，优选地其具有较高的抗形变性，具体地，基板1可以包括但不限于陶瓷基板1、高密度聚乙烯基板1、聚密胺基板1。
该LED灯片的封胶3的双驼峰结构较优选地满足以下尺寸关系：封胶3的长宽之比为(2.8-3.0)：(1.6-1.8):1。封胶3的长与驼峰的中心距之比为(1.6-1.7):1。在该尺寸下的封胶3具有较佳的散射性和较好的封装功能。
基板1的尺寸优选为(3.5-5)mm×5.0mm。
该LED灯片的纵向发光角度可达90-110°，横向发光角度可达130-150°。
图6提供了一种具体的LED灯片的尺寸示例：基板1的尺寸为3.6mm×5.0mm，封胶3的长宽高为4.9mm×2.94mm×2.25mm，封胶3的双驼峰中心距为1.89mm；封胶3的高为1.77mm。
上述实施方式仅为本实用新型的优选实施方式，不能以此来限定本实用新型保护的范围，本领域的技术人员在本实用新型的基础上所做的任何非实质性的变化及替换均属于本实用新型所要求保护的范围。

Claims (9)

  1. 一种LED灯片，其特征在于，包括基板、晶片和封胶，所述基板的主体为耐高温绝缘材料，基板的底面设有正极接头和负极接头，所述基板的顶面设有与正极接头电性连接的第一端子和与负极接头电性连接的第二端子；所述晶片与第一端子、第二端子电性连接；所述封胶呈双驼峰型。
  2. 如权利要求1所述的LED灯片，其特征在于，所述晶片通过焊线与所述第一端子、第二端子电性连接。
  3. 如权利要求1所述的LED灯片，其特征在于，所述晶片为倒装结构，直接与所述第一端子、第二端子电性连接。
  4. 如权利要求1所述的LED灯片，其特征在于，所述正极接头和所述负极接头均为条状且平行设置。
  5. 如权利要求1所述的LED灯片，其特征在于，所述正极接头和所述负极接头均贯通所述基板底面。
  6. 如权利要求1所述的LED灯片，其特征在于，所述基板的尺寸为(3.5-5)mm×5.0mm。
  7. 如权利要求1所述的LED灯片，其特征在于，所述封胶的长宽之比为(2.8-3.0)：(1.6-1.8):1。
  8. 如权利要求1所述的LED灯片，其特征在于，所述封胶的长与驼峰的中心距之比为(1.6-1.7):1。
  9. 如权利要求1所述的LED灯片，其特征在于，所述基板为陶瓷基板。
PCT/CN2019/084944 2018-05-08 2019-04-29 一种led灯片 WO2019214483A1 (zh)

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US16/969,991 US20210102668A1 (en) 2018-05-08 2019-04-29 Led lamp sheet

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CN201820684368.8U CN208090347U (zh) 2018-05-08 2018-05-08 一种led灯片
CN201820684368.8 2018-05-08

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Publication number Priority date Publication date Assignee Title
CN208090347U (zh) * 2018-05-08 2018-11-13 广州市巨宏光电有限公司 一种led灯片

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