WO2019208042A1 - Dispositif de polissage, dispositif de polissage de tranches, et procédé de fabrication de tranches - Google Patents

Dispositif de polissage, dispositif de polissage de tranches, et procédé de fabrication de tranches Download PDF

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Publication number
WO2019208042A1
WO2019208042A1 PCT/JP2019/011959 JP2019011959W WO2019208042A1 WO 2019208042 A1 WO2019208042 A1 WO 2019208042A1 JP 2019011959 W JP2019011959 W JP 2019011959W WO 2019208042 A1 WO2019208042 A1 WO 2019208042A1
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WO
WIPO (PCT)
Prior art keywords
polishing
wafer
local
pad
head
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Application number
PCT/JP2019/011959
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English (en)
Japanese (ja)
Inventor
上野　淳一
三千登 佐藤
薫 石井
Original Assignee
信越半導体株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2018145720A external-priority patent/JP6947135B2/ja
Application filed by 信越半導体株式会社 filed Critical 信越半導体株式会社
Publication of WO2019208042A1 publication Critical patent/WO2019208042A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/06—Dust extraction equipment on grinding or polishing machines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a polishing apparatus, a wafer polishing method, and a wafer manufacturing method.
  • CMP single-side polishing
  • DSP double-side polishing
  • FIG. 11 is a diagram showing an example of a conventional wafer polishing flow. After the wafer is subjected to DSP processing (S1 '), secondary polishing processing is performed (S3'), and finally final polishing processing is performed (S5 '). The secondary polishing process may be repeated twice or more as necessary (S4 ').
  • CMP processing is performed on the wafer after DSP processing.
  • the outer peripheral shape of the wafer is made with the aim of a honeycomb shape.
  • Subsequent CMP processing aims to conform to the previous shape as a whole, but in order to prevent the outermost peripheral portion of the wafer from sagging, it is set to have a slight spring shape. As a result, shape matching between the DSP and CMP is not performed well, and the DSP shape may be deteriorated by CMP processing.
  • the wafer outer peripheral shape by polishing processing such as double-side polishing (DSP) processing may become a honeycomb shape, and the CMP processing is set to a shape that splashes the outermost peripheral portion of the wafer, so DSP processing or the like
  • DSP processing double-side polishing
  • the shape matching between the polishing process and the CMP process before the CMP process is not performed well, and the polished process shape by the DSP process or the like may be deteriorated by the CMP process.
  • it is necessary to perform shape matching in the CMP processing and polishing processing before the CMP processing such as DSP processing.
  • the present invention has been made in view of the above problems, and planarizes the wafer shape after the CMP process by improving the polishing process before the CMP process such as the DSP process and the shape matching in the CMP process.
  • An object of the present invention is to provide a polishing apparatus and a method for polishing a wafer.
  • the present invention provides a polishing head for holding a wafer, a surface plate to which a polishing cloth for polishing the wafer is attached, and mounting the wafer on the polishing head.
  • the loading stage and an unloading stage for peeling the wafer from the polishing head can be further moved up and down.
  • a small local polishing pad is provided and the wafer is held while the local polishing pad is brought into contact with the wafer held by the polishing head by raising the local polishing pad relatively to the polishing head.
  • the polishing apparatus which is characterized in that the.
  • a polishing apparatus having a function of correcting a local portion of the wafer (outer peripheral portion of the wafer) even if the outer peripheral portion of the wafer is formed in a splashed shape.
  • CMP polishing apparatus
  • the local polishing pad is preferably in contact with the outer periphery of the wafer at the center position of the local polishing pad for polishing.
  • Such a polishing apparatus makes it possible to polish the splashed shape of the outer peripheral portion of the wafer more uniformly and reliably.
  • the polishing apparatus includes a back pad cleaning stage that can move up and down for cleaning the polishing head, and the local polishing pad is disposed on the back pad cleaning stage. It is preferable that the back pad cleaning stage and the local polishing pad can be moved up and down separately.
  • the present invention is also a wafer polishing method using a polishing apparatus, wherein the local polishing pad is relatively raised toward the polishing head before single-side polishing of the entire wafer surface, whereby the polishing head A method of polishing a wafer, wherein the wafer outer peripheral portion is locally polished concentrically by rotating the polishing head holding the wafer while bringing the wafer held in contact with the local polishing pad. provide.
  • the peripheral portion of the wafer is formed in a shape that is splashed by a DSP and cannot be corrected after the CMP process, and the flatness is deteriorated.
  • CMP device polishing device that has a function of correcting (the outer periphery of the wafer)
  • shape matching in CMP processing can be performed, and a highly flat wafer can be obtained.
  • the local polishing pad is in contact with the outer periphery of the wafer at the center position of the local polishing pad.
  • the splashed shape of the outer periphery of the wafer can be more reliably and uniformly polished by, for example, a DSP, and a highly flat wafer can be obtained.
  • the wafer is polished only within a range of 20 to 50 mm in the radial direction from the outer peripheral edge of the wafer.
  • the polishing load can be controlled by changing the relative height position of the polishing head holding the wafer with respect to the local polishing pad. preferable.
  • the wafer and the local polishing pad can be brought into contact with each other, and the polishing load for local polishing on the outer periphery of the wafer can be easily controlled.
  • the wafer to be locally polished is preferably a double-side polished wafer.
  • the present invention provides a method for manufacturing a wafer, comprising a step of locally polishing the outer periphery of the wafer by the above-described wafer polishing method.
  • the polishing apparatus and the wafer polishing method of the present invention for example, the outer peripheral portion of the wafer is formed into a splashed shape by a DSP or the like, and the flatness is poor without being corrected after CMP processing,
  • a polishing device CMP device
  • CMP device polishing device that has the function of correcting the local portion of the wafer (outer peripheral portion of the wafer)
  • the flatness of the wafer in the polishing process is created by the total amount of polishing and CMP processing before DSP processing such as DSP processing.
  • DSP processing aims at a flat shape with no outer periphery sag, it tends to be a shape in which the outer periphery is bounced. In order to prevent the outer periphery from sagging in the subsequent CMP processing, the shape becomes slightly crushed, and the flatness becomes worse when the DSP shape varies into a large flared shape.
  • the present inventors have conducted intensive studies to solve such problems. As a result, the inventors have conceived that deterioration of flatness can be suppressed by locally changing the wafer shape before CMP processing and matching the shape of the wafer before CMP processing with the shape of CMP, thereby completing the present invention.
  • the polishing apparatus of the present invention is an apparatus in which a function for polishing a local portion is added to the polishing apparatus.
  • FIG. 4 is a view showing an example of the mechanism of the polishing apparatus of the present invention.
  • the polishing apparatus 11 of the present invention takes out a wafer from a cassette of the wafer loading apparatus 13 and sets the wafer on a loading stage 16 for attaching the wafer to the polishing head.
  • the polishing head waits for the loading stage 16 to come under the polishing head in a state in which the back pad on the wafer suction surface is washed with pure water with a nylon bristle brush.
  • the polishing head 1 descends to attach the wafer W and the wafer W enters the pocket hole of the template 5 under the ceramic ring 4.
  • the wafer W is fixed to the back pad 2 by setting the internal pressure P1 of the polishing head 1 to a negative pressure.
  • the polishing head 1 is moved down and the local polishing pad 18 smaller than the wafer size that can move up and down is shown in FIG.
  • the local portion of the wafer W can be polished concentrically by rotating the polishing head 1 while supplying the polishing slurry.
  • the processing peripheral speed is preferably controlled only by the rotation of the polishing head.
  • the local polishing pad 18 is preferably in contact with the center position of the local polishing pad 18 at the position of the outer periphery of the wafer W.
  • FIG. 2 shows an example different from FIG. 1 of the local polishing pad in the polishing apparatus of the present invention.
  • a local polishing pad 18 for polishing a local portion may be disposed on the back pad cleaning stage 8 of the loading / unloading mechanism 15.
  • the unit that brush-washed the polishing head 1 before holding the wafer W is positioned again below the polishing head 1, and the polishing head 1 is lowered.
  • the local polishing pad 18 smaller than the wafer size mounted on the back pad cleaning stage 8 rises relatively toward the polishing head 1, contacts the wafer W, and rotates the polishing head 1 while supplying polishing slurry. To do.
  • FIGS. 8 and 9 are views showing an example of the back pad cleaning stage of the polishing apparatus of the present invention and an example of the back pad cleaning stage of the conventional polishing apparatus.
  • the back pad cleaning stage 8 ′ is provided with nylon bristle 9 ′ and a fluid spray nozzle 10 ′ to clean the polishing head 1 ′.
  • the back pad cleaning stage 8 of the present invention is divided into four parts by the nylon hair 9 on the back pad cleaning stage 8 in addition to the nylon hair 9 and the fluid spray nozzle 10.
  • a local polishing pad 18 is provided at one place of the pad cleaning stage 8.
  • the local polishing pad 18 can be moved up and down separately from the back pad cleaning stage 8. Further, the polishing slurry is supplied to the surface of the wafer W from the fluid spray nozzle 10 common to the cleaning of the polishing head 1.
  • the wafer After the local polishing of the wafer, the wafer is transferred to the polishing stage 19 for secondary polishing and final polishing, and transferred to the unloading stage 17 where the wafer W is peeled from the polishing head 1 by pure water jet and unloaded. It is sent to the next process by the device 14.
  • FIG. 7 is a diagram showing an example of polishing of the entire wafer surface of the polishing apparatus of the present invention.
  • a polishing cloth is pasted on the surface plate at the polishing stage 19. Thereafter, as shown in FIG. 7, the polishing slurry is supplied onto the polishing cloth 6 attached to the surface plate 7, and the polishing head 1 holding the wafer W is slid on the polishing cloth 6 for polishing. .
  • FIG. 12 is a flowchart for explaining the operation of local polishing in the wafer polishing method of the present invention.
  • FIG. 13 is a diagram showing an example of a polishing flow by the wafer polishing method of the present invention.
  • the wafer W is first removed from the cassette (FIG. 13A), and the wafer W is set on the loading stage 16 (FIG. 13B).
  • the polishing head 1 cleans the back pad 2 on the wafer suction surface with pure water before holding the wafer W on the back pad 2 of the template 5 (SC1 in FIG. 12, (C) in FIG. 13).
  • a back pad cleaning method a case where a back pad cleaning stage 8 provided with a local polishing pad 18 is used will be described as an example.
  • FIG. 6 is a diagram showing an example of cleaning of the back pad of the polishing head of the present invention. After the polishing head 1 is lowered and reaches the cleaning position, the back pad cleaning stage 8 with the nylon bristle 9 and the fluid spray nozzle 10 ascends toward the polishing head 1 from below the polishing head 1.
  • the loading stage 16 shown in FIG. 4 moves and moves directly under the polishing head 1 ((D) of FIG. 13), and the polishing head 1 moves down and back.
  • a wafer W is attached to the pad 2 (SC2 in FIG. 12, (E) in FIG. 13).
  • the loading stage 16 moves and moves to the next wafer setting position ((F) of FIG. 13).
  • FIG. 5 is a view for explaining attachment of a wafer to the polishing head of the polishing apparatus of the present invention.
  • the polishing head 1 that has finished the back pad cleaning waits at a predetermined position, and then the wafer W set on the Berglin sponge 12 on the loading stage 16 waits directly under the polishing head 1. Thereafter, the polishing head 1 is lowered to a position where the Bergrin sponge 12 is lightly crushed to hold the wafer W in the wafer pocket of the template 5, and the back pad 2 is deformed by setting the pressure P1 of the polishing head 1 to a negative pressure. Hold the wafer.
  • the wafer polishing method of the present invention includes a step of locally polishing the outer peripheral portion of the wafer W before single-side polishing of the entire wafer surface.
  • the back pad cleaning stage 8 is raised to the polishing head 1 side ((G) in FIG. 13).
  • the local polishing pad 18 rises relatively toward the polishing head 1 ((H) in FIG. 13), the local polishing pad 18 is pressed against the wafer, and polishing slurry is sprayed from the fluid ejection nozzle 10 to perform polishing.
  • the outer periphery of the wafer W is locally polished concentrically (SC3 in FIG. 12, (I) in FIG. 13).
  • the processing peripheral speed can be controlled only by the rotation of the polishing head.
  • the local polishing may be performed as a positional relationship in which the central portion of the local polishing pad is in contact with the outer peripheral portion of the wafer.
  • the load can be adjusted by the height position of the local polishing pad.
  • the polishing head 1 rotates (FIG. 13J), and the polishing head 1 is lowered and installed on the polishing stage 19 (FIG. 13K).
  • a secondary polishing cloth or a finishing polishing cloth is attached to the surface plate 7, and a load is applied with pressure P1 (internal pressure) and pressure P2 (external pressure), and the polishing head 1 and the surface plate 7 are rotated to bring the entire surface to the surface. Polishing is performed (SC4 in FIG. 12, (L) in FIG. 13).
  • the polishing head 1 performs polishing by combining a pressure P1 for operating the wafer holding position and a pressure P2 for operating the guide portion 3 of the template.
  • a pressure P1 for operating the wafer holding position and a pressure P2 for operating the guide portion 3 of the template.
  • Steps (J) to (M) in FIG. 13 can be repeated a plurality of times as in steps (N) to (U) in FIG.
  • the outer peripheral shape of the DSP wafer can be partially corrected by a CMP apparatus before CMP processing.
  • FIG. 10 is a diagram showing an example of a polishing flow using the polishing apparatus of the present invention
  • FIG. 11 is a diagram showing an example of a polishing flow using the conventional polishing apparatus of the present invention.
  • the secondary polishing S3 ′ and S4 ′ are performed after performing DSPS 1 ′.
  • the polishing method of the present invention as shown in FIG.
  • after performing DSPS1 and before CMP local polishing S2 of the outer periphery of the wafer is performed, transferred to the polishing stage 19, and subjected to secondary polishing S3 and S4, and finally, final polishing S5 is performed. Can do.
  • the wafer W subjected to the entire surface polishing is transferred to the unloading stage 17 and the polishing head 1 is lowered (see FIG. 13 (W)), the wafer W is peeled off from the polishing head 1 by pure water jet ((X) in FIG. 13) and sent to the next process (cleaning in the subsequent process) ((Y) in FIG. 13).
  • CMP single-side polishing
  • ESFQR maximum
  • the processing conditions for local polishing are as follows. [Polishing conditions] Equipment: Single-side polishing machine made by Fujikoshi Machined wafer: 300mm diameter P - product ⁇ 100> Silicon wafer Polishing cloth: Polishing cloth Non-woven cloth Abrasive: Polishing slurry KOH-based colloidal silica
  • the processing conditions for the overall polishing are as follows. [Polishing conditions] Equipment: Fujikoshi Machine single-side polishing machine Processed wafer: Diameter 300mm P - Product ⁇ 100> Silicon wafer Polishing cloth: Polishing cloth Non-woven fabric (secondary polishing) and Suede (finish polishing) Abrasive: Polishing slurry KOH-based colloidal silica And NH 4 OH-based colloidal silica
  • the flatness of the wafer was measured using a flatness measuring machine WaferSight 2 manufactured by KLA-Tencor.
  • the outer periphery exclusion range (EE) was 1 mm.
  • ⁇ ESFQR (max) was calculated from the measured flatness of the wafer.
  • Table 1 shows the relationship between the size (diameter) of the local polishing pad and the local polishing pad contact area on the wafer (pad contact area on the wafer) in each example.
  • FIG. 15 shows the result of ⁇ ESFQR (max) in Example 1-5.
  • ⁇ ESFQR (max) showed a negative value or a small positive value.
  • the value of ESFQR (max) after polishing the entire wafer surface was reduced by local polishing, and the flatness of the wafer could be improved.
  • ⁇ ESFQR (max) can be suppressed to be small, and deterioration of flatness due to the fact that shape matching is not performed in the double-side polishing process and the single-side polishing process can be suppressed to a low level.
  • the peripheral jump correction effect is increased.
  • the correction range of the local portion is 100 mm from the outer peripheral edge of the wafer. A range is preferred.
  • Example 6 local polishing and entire surface polishing were performed under the same conditions as in Example 1-5. In Comparative Example 1, the whole surface polishing was performed under the same conditions as in Example 1-5.
  • the flatness of the wafer was measured using a flatness measuring machine WaferSight 2 manufactured by KLA-Tencor.
  • the outer periphery exclusion range (EE) was 1 mm.
  • FIG. 16 shows a wafer shape profile after DSP processing, a wafer shape profile after local polishing processing, a wafer shape profile after CMP processing, a polishing allowance profile by local polishing processing, and a polishing allowance profile by CMP processing in Example 6. Indicates.
  • FIG. 17 shows a wafer shape profile after DSP processing, a wafer shape profile after CMP processing, and a polishing allowance profile by CMP processing of Comparative Example 1.
  • the flatness of the wafer was measured using a flatness measuring machine WaferSight 2 manufactured by KLA-Tencor.
  • the outer periphery exclusion range (EE) was 1 mm.
  • FIG. 18 shows a state where ESFQR (max) when performing CMP processing without performing local polishing (Comparative Example 2) and local polishing using a local polishing pad having a diameter of 50.8 mm according to the present invention as in the conventional method.
  • FIG. 6 is a diagram comparing ESFQR (max) when performing CMP processing up to (Example 7).
  • the polishing apparatus and polishing method of the present invention As described above, by using the polishing apparatus and polishing method of the present invention and performing local polishing with a local polishing pad before CMP processing, the flatness variation of the wafer could be improved.
  • the present invention is not limited to the above embodiment.
  • the above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention concerne un dispositif de polissage muni d'une tête de polissage, d'une plaque de surface sur laquelle est fixé un tissu de polissage, d'un étage de chargement pour fixer une tranche à la tête de polissage, et d'un étage de déchargement pour détacher la tranche de la tête de polissage, qui polit la tranche retenue par la tête de polissage. Le dispositif de polissage se caractérise en ce qu'il comprend en outre un tampon de polissage local plus petit que la tranche et qui se déplace vers le haut ou vers le bas; et qu'il peut polir localement une partie périphérique extérieure d'une tranche de façon concentrique, par rotation de la tête de polissage retenant la tranche, tout en amenant la tranche retenue par la tête de polissage et le tampon de polissage local au contact l'un de l'autre par élévation relative du tampon de polissage local vers la tête de polissage. Par conséquent, l'invention concerne un dispositif de polissage et un procédé de polissage d'une tranche, au moyen desquels une forme de tranche peut être planarisée après traitement CMP, par amélioration supplémentaire par appariement des formes entre un traitement de polissage, tel qu'un traitement DSP, avant le traitement CMP, et le traitement CMP, par comparaison avec des traitements classiques.
PCT/JP2019/011959 2018-04-25 2019-03-22 Dispositif de polissage, dispositif de polissage de tranches, et procédé de fabrication de tranches WO2019208042A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018084097 2018-04-25
JP2018-084097 2018-04-25
JP2018145720A JP6947135B2 (ja) 2018-04-25 2018-08-02 研磨装置、ウェーハの研磨方法、及び、ウェーハの製造方法
JP2018-145720 2018-08-02

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013055143A (ja) * 2011-09-01 2013-03-21 Shin Etsu Handotai Co Ltd シリコンウェーハの研磨方法及び研磨装置
JP2014027006A (ja) * 2012-07-24 2014-02-06 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2016197690A (ja) * 2015-04-06 2016-11-24 信越半導体株式会社 研磨装置
JP2017185612A (ja) * 2016-04-08 2017-10-12 株式会社荏原製作所 研磨装置および研磨方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013055143A (ja) * 2011-09-01 2013-03-21 Shin Etsu Handotai Co Ltd シリコンウェーハの研磨方法及び研磨装置
JP2014027006A (ja) * 2012-07-24 2014-02-06 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2016197690A (ja) * 2015-04-06 2016-11-24 信越半導体株式会社 研磨装置
JP2017185612A (ja) * 2016-04-08 2017-10-12 株式会社荏原製作所 研磨装置および研磨方法

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