KR20050028229A - 웨이퍼의 제조방법 및 웨이퍼의 연마장치 - Google Patents
웨이퍼의 제조방법 및 웨이퍼의 연마장치 Download PDFInfo
- Publication number
- KR20050028229A KR20050028229A KR1020030064844A KR20030064844A KR20050028229A KR 20050028229 A KR20050028229 A KR 20050028229A KR 1020030064844 A KR1020030064844 A KR 1020030064844A KR 20030064844 A KR20030064844 A KR 20030064844A KR 20050028229 A KR20050028229 A KR 20050028229A
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- wafer
- cleaning
- mirror
- additive solution
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000005498 polishing Methods 0.000 claims abstract description 116
- 238000004140 cleaning Methods 0.000 claims abstract description 37
- 239000000654 additive Substances 0.000 claims abstract description 29
- 230000000996 additive effect Effects 0.000 claims abstract description 29
- 238000007517 polishing process Methods 0.000 claims abstract description 28
- 238000000576 coating method Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims description 38
- 239000011248 coating agent Substances 0.000 claims description 16
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 14
- 239000002245 particle Substances 0.000 claims description 8
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 7
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 6
- 239000012498 ultrapure water Substances 0.000 claims description 6
- -1 poly [ethylene propylene] Polymers 0.000 claims description 4
- 230000002378 acidificating effect Effects 0.000 claims description 3
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims description 3
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 3
- 230000003472 neutralizing effect Effects 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 16
- 239000000243 solution Substances 0.000 abstract 4
- 239000003929 acidic solution Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 62
- 238000005530 etching Methods 0.000 description 8
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PRAKJMSDJKAYCZ-UHFFFAOYSA-N dodecahydrosqualene Natural products CC(C)CCCC(C)CCCC(C)CCCCC(C)CCCC(C)CCCC(C)C PRAKJMSDJKAYCZ-UHFFFAOYSA-N 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/102—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being able to rotate freely due to a frictional contact with the lapping tool
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (7)
- 웨이퍼의 표면제어를 위해 연마하는 경면 연마공정에 있어서,연마액을 공급하면서 연마패드로 웨이퍼의 경면을 기계적으로 연마하는 기계적 연마단계와;상기 기계적 연마단계를 거친 웨이퍼를 세정액으로 세정하는 세정단계와;상기 세정단계가 진행되는 중에 산성의 첨가제용액으로 웨이퍼의 표면을 중화시켜 코팅하는 코팅단계를 포함하는 연마공정에 의하는 웨이퍼의 제조방법.
- 청구항 1에 있어서, 상기 첨가제용액은 폴리[에틸렌 프로필렌]글리콜( poly[ettylene propylene)glycol)을 초순수에 용해시킨 것이 특징인 연마공정에 의하는 웨이퍼의 제조방법.
- 청구항 2에 있어서, 상기 첨가제용액은 Ph3 내지 4로 유지되는 것이 특징인 연마공정에 의하는 웨이퍼의 제조방법.
- 청구항 2에 있어서, 상기 첨가제용액은 폴리[에틸렌 프로필렌]글리콜을 초순수에 2 내지 3%로 첨가하여 제조하는 것이 특징인 연마공정에 의하는 웨이퍼의 제조방법.
- 청구항 1내지 4 중 어느 하나의 청구항에 있어서, 상기 코팅단계는 연마액의 입자의 크기를 달리하여 다단계에 걸쳐 수행되는 각 기계적 연마공정에 대한 세정단계의 중간에 수행되는 것이 특징인 연마공정에 의하는 웨이퍼의 제조방법.
- 청구항 5에 있어서, 상기 기계적 연마는 3단계에 걸쳐 수행되며, 상기 코팅단계는 제 1단계의 연마가 종료된 후에는 세정시간이 종료되기 5 내지 15초 전부터 10 내지 20초간 수행되며;제 2 단계 및 제 3 단계에서는 세정시간이 종료되기 5 내지 15초 전부터 5 내지 15초간 수행되는 것이 특징인 연마공정에 의하는 웨이퍼의 제조방법.
- 하정반의 상부에 설치되며, 웨이퍼의 경면에 접촉하여 경면연마를 수행하는 연마패드와;상기 연마패드의 상방에 이동 가능하게 설치되며, 하면에 부착되는 웨이퍼와 일체가 되어 가압 회전하여 상기 웨이퍼의 경면이 상기 연마패드에 의해 연마되게 하는 연마헤드와;상기 연마헤드와 연마패드 사이로 연마액을 공급하는 연마액 공급수단과;상기 연마패드에 의한 기계적 연마가 종료된 후 웨이퍼 경면의 세정을 위한 세정액을 공급하는 세정액공급수단과;웨이퍼 경면에 대한 세정이 종료되기 전에 경면코팅을 위한 첨가제용액를 공급하는 첨가제용액 공급수단을 포함하여 구성되는 웨이퍼의 연마장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030064844A KR100963043B1 (ko) | 2003-09-18 | 2003-09-18 | 웨이퍼의 제조방법 및 웨이퍼의 연마장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030064844A KR100963043B1 (ko) | 2003-09-18 | 2003-09-18 | 웨이퍼의 제조방법 및 웨이퍼의 연마장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050028229A true KR20050028229A (ko) | 2005-03-22 |
KR100963043B1 KR100963043B1 (ko) | 2010-06-14 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030064844A KR100963043B1 (ko) | 2003-09-18 | 2003-09-18 | 웨이퍼의 제조방법 및 웨이퍼의 연마장치 |
Country Status (1)
Country | Link |
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KR (1) | KR100963043B1 (ko) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3333684B2 (ja) * | 1996-03-15 | 2002-10-15 | 東京エレクトロン株式会社 | 研磨処理方法 |
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- 2003-09-18 KR KR1020030064844A patent/KR100963043B1/ko active IP Right Grant
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KR100963043B1 (ko) | 2010-06-14 |
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