WO2015015705A1 - Procédé et dispositif de polissage de plaquettes - Google Patents

Procédé et dispositif de polissage de plaquettes Download PDF

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Publication number
WO2015015705A1
WO2015015705A1 PCT/JP2014/003414 JP2014003414W WO2015015705A1 WO 2015015705 A1 WO2015015705 A1 WO 2015015705A1 JP 2014003414 W JP2014003414 W JP 2014003414W WO 2015015705 A1 WO2015015705 A1 WO 2015015705A1
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WO
WIPO (PCT)
Prior art keywords
polishing
wafer
time
surface plate
polished
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PCT/JP2014/003414
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English (en)
Japanese (ja)
Inventor
三千登 佐藤
上野　淳一
薫 石井
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信越半導体株式会社
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Publication of WO2015015705A1 publication Critical patent/WO2015015705A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0023—Other grinding machines or devices grinding machines with a plurality of working posts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B24B37/345—Feeding, loading or unloading work specially adapted to lapping

Definitions

  • the present invention relates to an index-type wafer polishing method and a wafer polishing apparatus for preventing haismura.
  • polishing For polishing a semiconductor wafer typified by a silicon wafer, as shown in FIG. 6, a surface plate 102 on which a polishing cloth 105 is attached, and an abrasive supply mechanism for supplying an abrasive 106 onto the surface plate 102.
  • a polishing apparatus 101 including a polishing head 104 for holding a wafer W to be polished 103 and a wafer W to be polished is often used.
  • the polishing apparatus 101 holds the wafer W with the polishing head 104, supplies the polishing agent 106 from the polishing agent supply mechanism 103 onto the polishing cloth 105, and rotates the surface plate 102 and the polishing head 104, respectively. Polishing is performed by sliding on the polishing cloth 105.
  • the polishing of the semiconductor wafer is often performed in multiple stages by changing the type of polishing cloth and the type of polishing agent, and the polishing process performed in the final stage is called finish polishing or final polishing.
  • FIG. 7 shows an index type polishing apparatus.
  • a polishing apparatus 201 having a plurality of surface plates 207, 208, and 209 often has a larger number of polishing shafts for rotating the polishing head than the number of surface plates. Since loading (unloading) and unloading (peeling) of the wafer W to the head can be performed, productivity can be improved.
  • a method is used in which each polishing axis is rotated around a central axis 202.
  • FIG. 7 shows a case where each polishing shaft is in an initial position before starting the turning movement.
  • the movement of the polishing head during the pivotal movement differs depending on the polishing axis in order to protect various wirings.
  • the number of polishing axes to which the polishing head 206 is attached is 4 axes ⁇ n or more (4 axes in the case of the polishing apparatus 201 in FIG. 7). If the polishing axis whose initial position is the position of the loading / unloading stage 205 is the first polishing axis 204, the first polishing axis 204 is positioned at the loading / unloading stage 205 as shown in FIG.
  • 0 degrees (loading / unloading stage 205 position) ⁇ 90 degrees (first surface plate 207 position) ⁇ 180 degrees (second surface plate 208 position) ⁇ 270 degrees (third surface plate 209 position) ⁇
  • the wafer is polished while the first polishing head 206 is pivoted and moved at 0 degree (loading / unloading stage 205 position). That is, when the polishing is completed at the position of 270 degrees (the third platen 209 position), the wafer W is turned in the opposite direction and returned to the loading / unloading stage 205 position to start the peeling operation of the wafer W from the polishing head. .
  • the peeling operation is usually performed by spraying a water flow from the nozzle onto the edge portion of the wafer.
  • the peeled wafer is dropped onto an unloading stage filled with water, and then transferred to the next step such as a water tank or a cleaning tank by a robot or the like.
  • the first, second, third, and fourth polishing axes in FIG. 8 are the first polishing axis 204, the second polishing axis 210, the third polishing axis 211, and the fourth polishing axis in FIG. 212 respectively.
  • the wafer is cleaned using ultrasonic waves or chemicals, and then inspected for particles and haze using a particle measuring instrument such as KLA-Tencor.
  • the particle measuring device can output a difference in in-plane haze as a haze map. This haze map is often output on an autoscale to facilitate determination of surface unevenness, and unevenness becomes more visible as the haze level decreases.
  • each polishing shaft may be rotated 90 degrees or 270 degrees until the next step.
  • the time is different in each case.
  • the wafer of the first polishing shaft 204 is rotated 270 degrees in the reverse direction to the unloading position after the final polishing by the third surface plate 209, so that the wafer is being rotated during the rotation after the polishing is completed.
  • the time during which the polishing agent attached to the surface is subjected to the etching action becomes longer, and the haze is more likely to occur as compared with wafers with other polishing axes.
  • the cause of this hazmla is abrasive bubbles remaining on the polished surface of the wafer.
  • This bubble is removed by the peeling operation.
  • the bubble is removed by etching of the abrasive before the peeling operation. A part or the whole of the pattern remains on the polished surface of the wafer and is observed as hazyness.
  • each polishing shaft has a different initial position, the timing for performing the reverse rotation of 270 degrees is different.
  • the first polishing shaft 204 rotates by 270 degrees after polishing, the surface of the wafer after polishing is etched.
  • the second polishing shaft 210 and the third polishing shaft 211 are rotated by 270 degrees in the middle of the polishing step before the polishing is completed, the wafer surface is etched by the polishing agent during the rotation movement, and haismura is generated.
  • the haze irregularity is corrected in the next polishing step.
  • the fourth polishing shaft 212 performs a 270-degree turning movement before the start of polishing, all the turning movements from the interruption of polishing to the resumption of polishing are 90 degrees, and the etching time during the turning movement is short. This is an ideal operation that is unlikely to occur. Accordingly, due to the mechanical mechanism of the polishing apparatus 201, the first polishing shaft 204 is most likely to occur, and the fourth polishing shaft 212 is least likely to occur.
  • FIG. 9 shows an example of a haze map of a wafer polished while being held by a polishing head at the position of each polishing axis among a plurality of wafers having a diameter of 300 mm polished using an index type polishing apparatus.
  • the polished surface of the wafer polished by the first polishing shaft 204 is generally uneven.
  • the polished surfaces of the wafers polished by the second polishing shaft 210 and the third polishing shaft 211 are uniform as a whole, but a partially uneven pattern can be seen in the circled portion in the figure. . Such unevenness is not observed on the polished surface of the wafer polished by the fourth polishing shaft 212.
  • the hazyness of the wafer of the first polishing shaft 204 becomes more prominent in a large-sized polishing apparatus capable of polishing with a diameter of 450 mm, and becomes a level that is unsatisfactory in the determination of hazyness using an autoscale map. This is presumably because the larger the polishing apparatus, the longer the swivel movement time and the longer the etching time for the abrasive.
  • An example of this Heismura is shown in FIG.
  • the demand for improving the smoothness of the wafer surface has increased, and the haze level has greatly improved due to the introduction of brush cleaning with low etching power for cleaning after polishing.
  • the haze irregularity between the polishing axes peculiar to the index type polishing apparatus when polishing with the index type polishing apparatus has become a problem.
  • the haze generated at the first polishing shaft 204 as shown in FIG. 10 has been recognized as an obvious abnormality.
  • Patent Document 1 is a method for managing the time until the cleaning tank is put into the wafer after finish polishing, or using a shower or a low-pressure shower that is atomized before cleaning, as shown in FIG. As shown in (1), it is impossible to prevent the hazy irregularity caused by the difference in the rotational movement time of each polishing shaft in the index method. Therefore, even if it is the same product, there existed a problem that a different haze pattern was mixed for every grinding
  • the present invention has been made in view of the above-described problems, and can effectively prevent the hazy irregularity that occurs during the polishing step and after the end of polishing until the start of the peeling operation, which is peculiar to the index type polishing apparatus.
  • An object is to provide a polishing method.
  • a plurality of polishing heads for holding a wafer, a plurality of surface plates to which a polishing cloth for polishing the wafer is attached, and the wafer A loading / unloading stage is prepared for mounting to the polishing head or peeling from the polishing head, the plurality of surface plates and the loading / unloading stage are arranged concentrically, and the polishing head is swung.
  • the time for etching the polished surface of the wafer with the abrasive can be shortened.
  • a plurality of polishing heads for holding a wafer, a plurality of surface plates to which a polishing cloth for polishing the wafer is attached, and mounting of the wafer to the polishing head or the A loading / unloading stage for peeling from the polishing head is provided, the plurality of surface plates and the loading / unloading stage are arranged concentrically, and by rotating the polishing head, the polishing head An index-type polishing apparatus that simultaneously polishes a plurality of wafers while switching the surface plate used for polishing the wafer held by the wafer, and the time from when the polishing of the wafer is interrupted to when polishing is resumed when the surface plate is switched And the time from the end of polishing of the wafer to the start of the peeling operation from the polishing head.
  • a polishing apparatus of a wafer characterized in that those within 5 seconds.
  • the time from the interruption of wafer polishing when switching the surface plate to the restart of polishing and the time from the end of polishing to the start of the peeling operation are shortened to within 15 seconds.
  • the time during which the polished surface of the wafer is etched by the abrasive can be shortened.
  • FIG. 1 is a schematic view illustrating an index type polishing apparatus of the present invention. It is the schematic which shows a part of index type polisher of the present invention. It is a flowchart which shows an example of the rotational movement method of each grinding
  • the present invention is not limited to this.
  • the time until the start of the next step differs for each polishing axis, especially after polishing interruption
  • the present inventors conducted an experiment in order to obtain the time until the occurrence of haismura due to the etching action in the index-type wafer polishing method and polishing apparatus. Specifically, as shown in measurement 1 and measurement 2 in Table 1 and Table 2 below, the time from polishing interruption to restart and the time from the end of polishing to the start of the peeling operation are changed to confirm the occurrence of haismura. did.
  • the object to be measured was the first polishing axis that is most prone to hazyness. That is, a case was included in which a 90-degree turning movement was included from the polishing interruption to the resumption, and a 270-degree turning movement was included after the polishing was completed until the peeling operation was started.
  • Tables 1 and 2 show the time from the mounting of the wafer on the loading / unloading stage to the start of polishing on the first surface plate because the first polishing shaft is not etched by the abrasive. Not shown.
  • the present inventors have found that if the time during which the wafer is subjected to the etching action exceeds 15 seconds, haismism occurs. Then, the time from the interruption of the polishing of the wafer when switching the surface plate to the resumption of polishing and the time from the completion of the polishing of the wafer to the start of the peeling operation from the polishing head within 15 seconds can reduce the occurrence of haismura.
  • the present invention was completed by conceiving that it can be effectively prevented.
  • the polishing apparatus 1 of the present invention includes a first surface plate 3, a second surface plate 4, and a third surface plate to which a polishing cloth 16 for polishing a wafer W is attached.
  • a board 5 and a loading / unloading stage 2 for loading (mounting) and unloading (peeling) the wafer W onto the polishing head are provided.
  • the first surface plate 3, the second surface plate 4, the third surface plate 5 and the loading / unloading stage 2 are arranged concentrically around the central axis 14.
  • the polishing apparatus 1 has a first polishing shaft 10 for attaching and rotating a first polishing head 6 for holding the wafer W above the loading / unloading stage 2.
  • the fourth polishing head 9 and the fourth polishing shaft 13 are above the first surface plate 3
  • the third polishing head 8 and the third polishing shaft 12 are above the second surface plate 4.
  • a second polishing head 7 and a second polishing shaft 11 are provided above the third surface plate 5.
  • the respective rotating shafts are simultaneously turned around the central axis 14 so that the respective polishing heads are turned and perform polishing while switching the surface plate used for wafer polishing.
  • the positions of the polishing heads and the polishing shaft shown in FIG. 1 are initial positions, and thereafter, the wafer is polished, loaded, and unloaded while switching the surface plate by repeating the swivel movement.
  • an abrasive supply mechanism 15 for supplying an abrasive onto the surface plate when polishing the wafer W is installed above each surface plate.
  • the index-type polishing apparatus of the present invention is the time from the interruption of the polishing of the wafer W when switching the surface plate to the restart of polishing, and from the end of the polishing of the wafer W to the start of the peeling operation from the polishing head.
  • the time is within 15 seconds.
  • the rotational movement speed of each polishing shaft and polishing head, the operation speed when the polishing head is raised or lowered above the surface plate, the polishing recipe (the polishing processing conditions such as pressure and time for pressing the wafer against the polishing cloth), What is necessary is just to set it as the polishing apparatus designed so that the time from the polishing interruption to the polishing restart and the time from the polishing end to the start of the peeling operation may be within 15 seconds.
  • FIG. 1 is an example of an index type polishing apparatus according to the present invention, and the present invention is not limited to this.
  • the polishing apparatus of FIG. 1 includes three surface plates and four polishing heads, but the present invention is not limited to this number, and is an index type polishing apparatus that simultaneously polishes a wafer using a plurality of these. I need it. Moreover, it is good also as a polishing apparatus provided with two or more polishing heads allocated to one surface plate as shown in FIG.
  • the index type wafer polishing method of the present invention when the polishing apparatus 1 of FIGS. 1 and 2 is used will be described.
  • the first polishing shaft 10 at the loading / unloading stage 2 position is rotated 90 degrees after loading the wafer onto the first polishing head 6.
  • polishing is started there.
  • the polishing on the first surface plate 3 is interrupted, turned 90 degrees, moved to the second surface plate 4, and the polishing is resumed.
  • the polishing on the second surface plate 4 is interrupted, turned 90 degrees, moved to the third surface plate 5, and the polishing is resumed on the third surface plate 5.
  • the wafer When the polishing of the wafer is completed on the third surface plate 5, the wafer is turned to the opposite side of 270 degrees, moved to the loading / unloading stage 2, the wafer is unloaded, and one cycle is completed.
  • the other polishing shafts simultaneously rotate in the same manner to perform polishing, loading, and unloading of the wafer while switching each surface plate or each surface plate and the loading / unloading stage 2.
  • the time from the interruption of the polishing of the wafer W when switching the respective surface plates to the resumption of polishing and the time from the completion of the polishing of the wafer to the start of the peeling operation from the polishing head are within 15 seconds. .
  • the time for etching the polished surface of the wafer with the abrasive can be shortened.
  • a polishing apparatus provided with three surface plates and four polishing heads is used.
  • the present invention is not limited to this number, and an index method of polishing a wafer simultaneously using a plurality of these.
  • the present invention can be implemented using any polishing apparatus. Further, the present invention can be implemented even when a plurality of polishing heads assigned to one surface plate as shown in FIG. 1 are used instead of one.
  • Example 1 A silicon wafer was polished according to the index-type wafer polishing method of the present invention using the index-type wafer polishing apparatus of the present invention as shown in FIGS.
  • the wafer to be polished was 300 mm in diameter.
  • a silicon wafer that has been polished using the first polishing axis that is most likely to generate a haze is measured with a particle measuring instrument SP3 manufactured by KLA-Tencor, and a haze map is automatically scaled. After output, it was judged visually.
  • the turning time of 270 degrees was performed, and the time to move to the next step was 10 seconds. This is the time from the end of wafer polishing to the start of the peeling operation for the first polishing axis.
  • FIG. 4 is a graph showing the incidence of haismura. As shown in FIG. 4, no haismura occurred.
  • Example 2 Same as Example 1 except that the time to move to the next step after turning at 270 degrees (in the first polishing axis, the time from the end of wafer polishing to the start of the peeling operation) was 15 seconds. The wafer was polished under various conditions, and the presence or absence of haismura was confirmed. At this time, the time for moving to the next step after performing 90 degrees of swivel movement (in the first polishing axis, the time from polishing interruption to restart when switching the surface plate) is 270 degrees of swivel movement. Since the turning movement time is shorter than when it is included, it is 15 seconds or less. As shown in FIG. 4, no haismura occurred.
  • Example 1 Same as Example 1 except that the time required to move to the next step after turning at 270 degrees (in the first polishing axis, the time from the end of wafer polishing to the start of the peeling operation) was 20 seconds. The wafer was polished under various conditions, and the presence or absence of haismura was confirmed. At this time, the time for moving to the next step after performing 90 degrees of swivel movement (in the first polishing axis, the time from polishing interruption to restart when switching the surface plate) is 270 degrees of swivel movement. Since the turning movement time is shorter than when it is included, it is 20 seconds or less. As shown in FIG. 4, the occurrence rate of haismura was a little less than 10%, and the occurrence of haismura could not be prevented.
  • Example 2 Same as Example 1 except that the time required to move to the next step after turning at 270 degrees (in the first polishing axis, the time from the end of the wafer polishing to the start of the peeling operation) was set to 30 seconds. The wafer was polished under various conditions, and the haze was evaluated. At this time, the time for moving to the next step after performing 90 degrees of swivel movement (in the first polishing axis, the time from polishing interruption to restart when switching the surface plate) is 270 degrees of swivel movement. Since the turning movement time is shorter than when it is included, it is 30 seconds or less. As shown in FIG. 4, the occurrence rate of haismura was 25%, and the occurrence of haismura could not be prevented.
  • Example 3 The etching power by the abrasive varies depending on the amount of alkali component contained in the abrasive. Therefore, in Example 3, a wafer having a diameter of 300 mm is polished in a state in which haismura is more likely to occur by adding a 10% concentration potassium hydroxide solution to the abrasive used to increase the etching power of the abrasive. The presence or absence of Heismura was confirmed. At this time, the turning movement of 270 degrees was performed, and the time to move to the next step was set to 15 seconds. This is the time from the end of wafer polishing to the start of the peeling operation for the first polishing axis.
  • the time for moving to the next step after performing 90 degrees of swivel movement (in the first polishing axis, the time from polishing interruption to restart when switching the surface plate) is 270 degrees of swivel movement. Since the turning movement time is shorter than when it is included, it is 15 seconds or less.
  • the concentration of the added potassium hydroxide in the abrasive was adjusted to 0.1%. And the presence or absence of haismura was confirmed by the method similar to Example 1.
  • FIG. 5 is a graph which shows the incidence rate of haismura. As shown in FIG. 5, no haismura occurred.
  • Example 4 The wafer was polished under the same conditions as in Example 3 except that the concentration of potassium hydroxide in the abrasive was adjusted to 0.3%, and the haze was evaluated. As shown in FIG. 5, no haismura occurred.
  • Example 3 Same as Example 3 except that the time required to move to the next step after turning at 270 degrees (in the first polishing axis, the time from the end of wafer polishing to the start of the peeling operation) was 20 seconds. The wafer was polished under various conditions, and the haze was evaluated. At this time, the time for moving to the next step after performing 90 degrees of swivel movement (in the first polishing axis, the time from polishing interruption to restart when switching the surface plate) is 270 degrees of swivel movement. Since the turning movement time is shorter than when it is included, it is 20 seconds or less. As shown in FIG. 5, the incidence of haismura was 13%.
  • Comparative Example 4 The wafer was polished under the same conditions as in Comparative Example 3 except that the concentration of potassium hydroxide in the abrasive was adjusted to 0.3%, and the haze was evaluated. As shown in FIG. 5, by increasing potassium hydroxide, the incidence of haismura increased to 31%.
  • the time from polishing interruption to restart when switching the surface plate, and the time from the end of polishing to the start of the peeling operation should be within 15 seconds. As a result, it was found that the occurrence of haismura can be effectively prevented. Further, from the results of Examples 3 and 4 and Comparative Examples 3 and 4, even when a polishing agent having a stronger etching power is used, the time from polishing interruption to restart when switching the surface plate, and polishing It has been found that if the time from the end to the start of the peeling operation is within 15 seconds, the occurrence of haismura can be prevented.
  • the present invention is not limited to the above embodiment.
  • the above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

Cette invention concerne un procédé de polissage de plaquettes, à savoir un procédé de polissage à indexage dans lequel une pluralité de têtes de polissage, une pluralité de platines auxquelles sont fixés des tissus de polissage, et un étage de chargement/déchargement permettant de fixer et de désolidariser les plaquettes des têtes de polissage sont préparés, les platines et l'étage de chargement/déchargement sont disposés de manière concentrique, et les têtes de polissage sont mises en rotation, ce qui permet de polir simultanément une pluralité de plaquettes tout en remplaçant les platines utilisées à cet effet. Ledit procédé de polissage de plaquettes est caractérisé en ce que, après l'interruption du polissage d'une plaquette du fait d'un changement de platine, le polissage de la plaquette reprend dans les 15 secondes, et après avoir effectué le polissage de la plaquette, l'opération de désolidarisation de la plaquette de la tête de polissage démarre dans les 15 secondes. Ceci permet de réaliser un procédé de polissage au cours duquel il est possible d'empêcher de manière efficace l'irrégularité de brouillard caractéristique qui se produit dans des dispositifs de polissage à indexage au cours de l'étape de polissage et entre la fin du polissage et le début de l'opération de désolidarisation.
PCT/JP2014/003414 2013-07-29 2014-06-26 Procédé et dispositif de polissage de plaquettes WO2015015705A1 (fr)

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JP2013157157A JP6083346B2 (ja) 2013-07-29 2013-07-29 ウェーハの研磨方法及びウェーハの研磨装置

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000094317A (ja) * 1998-09-25 2000-04-04 Okamoto Machine Tool Works Ltd ウエハの研磨装置
JP2002050598A (ja) * 2000-08-03 2002-02-15 Tokyo Seimitsu Co Ltd ウェーハ加工方法及びその装置
JP2012506619A (ja) * 2008-10-21 2012-03-15 アプライド マテリアルズ インコーポレイテッド パッドコンディショナの自動ディスク交換

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07201786A (ja) * 1994-01-05 1995-08-04 Sumitomo Electric Ind Ltd 化合物半導体基板の研磨方法と研磨装置
JP2001196340A (ja) * 1999-10-27 2001-07-19 Shin Etsu Handotai Co Ltd ワークの研磨方法及びワーク研磨装置
JP2004296596A (ja) * 2003-03-26 2004-10-21 Fujitsu Ltd 半導体装置の製造方法
JP5598371B2 (ja) * 2011-02-21 2014-10-01 旭硝子株式会社 ガラス基板の研磨方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000094317A (ja) * 1998-09-25 2000-04-04 Okamoto Machine Tool Works Ltd ウエハの研磨装置
JP2002050598A (ja) * 2000-08-03 2002-02-15 Tokyo Seimitsu Co Ltd ウェーハ加工方法及びその装置
JP2012506619A (ja) * 2008-10-21 2012-03-15 アプライド マテリアルズ インコーポレイテッド パッドコンディショナの自動ディスク交換

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