WO2019208042A1 - Polishing device, wafer polishing method, and wafer manufacturing method - Google Patents

Polishing device, wafer polishing method, and wafer manufacturing method Download PDF

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Publication number
WO2019208042A1
WO2019208042A1 PCT/JP2019/011959 JP2019011959W WO2019208042A1 WO 2019208042 A1 WO2019208042 A1 WO 2019208042A1 JP 2019011959 W JP2019011959 W JP 2019011959W WO 2019208042 A1 WO2019208042 A1 WO 2019208042A1
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Prior art keywords
polishing
wafer
local
pad
head
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PCT/JP2019/011959
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French (fr)
Japanese (ja)
Inventor
上野　淳一
三千登 佐藤
薫 石井
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信越半導体株式会社
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Priority claimed from JP2018145720A external-priority patent/JP6947135B2/en
Application filed by 信越半導体株式会社 filed Critical 信越半導体株式会社
Publication of WO2019208042A1 publication Critical patent/WO2019208042A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/06—Dust extraction equipment on grinding or polishing machines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a polishing apparatus, a wafer polishing method, and a wafer manufacturing method.
  • CMP single-side polishing
  • DSP double-side polishing
  • FIG. 11 is a diagram showing an example of a conventional wafer polishing flow. After the wafer is subjected to DSP processing (S1 '), secondary polishing processing is performed (S3'), and finally final polishing processing is performed (S5 '). The secondary polishing process may be repeated twice or more as necessary (S4 ').
  • CMP processing is performed on the wafer after DSP processing.
  • the outer peripheral shape of the wafer is made with the aim of a honeycomb shape.
  • Subsequent CMP processing aims to conform to the previous shape as a whole, but in order to prevent the outermost peripheral portion of the wafer from sagging, it is set to have a slight spring shape. As a result, shape matching between the DSP and CMP is not performed well, and the DSP shape may be deteriorated by CMP processing.
  • the wafer outer peripheral shape by polishing processing such as double-side polishing (DSP) processing may become a honeycomb shape, and the CMP processing is set to a shape that splashes the outermost peripheral portion of the wafer, so DSP processing or the like
  • DSP processing double-side polishing
  • the shape matching between the polishing process and the CMP process before the CMP process is not performed well, and the polished process shape by the DSP process or the like may be deteriorated by the CMP process.
  • it is necessary to perform shape matching in the CMP processing and polishing processing before the CMP processing such as DSP processing.
  • the present invention has been made in view of the above problems, and planarizes the wafer shape after the CMP process by improving the polishing process before the CMP process such as the DSP process and the shape matching in the CMP process.
  • An object of the present invention is to provide a polishing apparatus and a method for polishing a wafer.
  • the present invention provides a polishing head for holding a wafer, a surface plate to which a polishing cloth for polishing the wafer is attached, and mounting the wafer on the polishing head.
  • the loading stage and an unloading stage for peeling the wafer from the polishing head can be further moved up and down.
  • a small local polishing pad is provided and the wafer is held while the local polishing pad is brought into contact with the wafer held by the polishing head by raising the local polishing pad relatively to the polishing head.
  • the polishing apparatus which is characterized in that the.
  • a polishing apparatus having a function of correcting a local portion of the wafer (outer peripheral portion of the wafer) even if the outer peripheral portion of the wafer is formed in a splashed shape.
  • CMP polishing apparatus
  • the local polishing pad is preferably in contact with the outer periphery of the wafer at the center position of the local polishing pad for polishing.
  • Such a polishing apparatus makes it possible to polish the splashed shape of the outer peripheral portion of the wafer more uniformly and reliably.
  • the polishing apparatus includes a back pad cleaning stage that can move up and down for cleaning the polishing head, and the local polishing pad is disposed on the back pad cleaning stage. It is preferable that the back pad cleaning stage and the local polishing pad can be moved up and down separately.
  • the present invention is also a wafer polishing method using a polishing apparatus, wherein the local polishing pad is relatively raised toward the polishing head before single-side polishing of the entire wafer surface, whereby the polishing head A method of polishing a wafer, wherein the wafer outer peripheral portion is locally polished concentrically by rotating the polishing head holding the wafer while bringing the wafer held in contact with the local polishing pad. provide.
  • the peripheral portion of the wafer is formed in a shape that is splashed by a DSP and cannot be corrected after the CMP process, and the flatness is deteriorated.
  • CMP device polishing device that has a function of correcting (the outer periphery of the wafer)
  • shape matching in CMP processing can be performed, and a highly flat wafer can be obtained.
  • the local polishing pad is in contact with the outer periphery of the wafer at the center position of the local polishing pad.
  • the splashed shape of the outer periphery of the wafer can be more reliably and uniformly polished by, for example, a DSP, and a highly flat wafer can be obtained.
  • the wafer is polished only within a range of 20 to 50 mm in the radial direction from the outer peripheral edge of the wafer.
  • the polishing load can be controlled by changing the relative height position of the polishing head holding the wafer with respect to the local polishing pad. preferable.
  • the wafer and the local polishing pad can be brought into contact with each other, and the polishing load for local polishing on the outer periphery of the wafer can be easily controlled.
  • the wafer to be locally polished is preferably a double-side polished wafer.
  • the present invention provides a method for manufacturing a wafer, comprising a step of locally polishing the outer periphery of the wafer by the above-described wafer polishing method.
  • the polishing apparatus and the wafer polishing method of the present invention for example, the outer peripheral portion of the wafer is formed into a splashed shape by a DSP or the like, and the flatness is poor without being corrected after CMP processing,
  • a polishing device CMP device
  • CMP device polishing device that has the function of correcting the local portion of the wafer (outer peripheral portion of the wafer)
  • the flatness of the wafer in the polishing process is created by the total amount of polishing and CMP processing before DSP processing such as DSP processing.
  • DSP processing aims at a flat shape with no outer periphery sag, it tends to be a shape in which the outer periphery is bounced. In order to prevent the outer periphery from sagging in the subsequent CMP processing, the shape becomes slightly crushed, and the flatness becomes worse when the DSP shape varies into a large flared shape.
  • the present inventors have conducted intensive studies to solve such problems. As a result, the inventors have conceived that deterioration of flatness can be suppressed by locally changing the wafer shape before CMP processing and matching the shape of the wafer before CMP processing with the shape of CMP, thereby completing the present invention.
  • the polishing apparatus of the present invention is an apparatus in which a function for polishing a local portion is added to the polishing apparatus.
  • FIG. 4 is a view showing an example of the mechanism of the polishing apparatus of the present invention.
  • the polishing apparatus 11 of the present invention takes out a wafer from a cassette of the wafer loading apparatus 13 and sets the wafer on a loading stage 16 for attaching the wafer to the polishing head.
  • the polishing head waits for the loading stage 16 to come under the polishing head in a state in which the back pad on the wafer suction surface is washed with pure water with a nylon bristle brush.
  • the polishing head 1 descends to attach the wafer W and the wafer W enters the pocket hole of the template 5 under the ceramic ring 4.
  • the wafer W is fixed to the back pad 2 by setting the internal pressure P1 of the polishing head 1 to a negative pressure.
  • the polishing head 1 is moved down and the local polishing pad 18 smaller than the wafer size that can move up and down is shown in FIG.
  • the local portion of the wafer W can be polished concentrically by rotating the polishing head 1 while supplying the polishing slurry.
  • the processing peripheral speed is preferably controlled only by the rotation of the polishing head.
  • the local polishing pad 18 is preferably in contact with the center position of the local polishing pad 18 at the position of the outer periphery of the wafer W.
  • FIG. 2 shows an example different from FIG. 1 of the local polishing pad in the polishing apparatus of the present invention.
  • a local polishing pad 18 for polishing a local portion may be disposed on the back pad cleaning stage 8 of the loading / unloading mechanism 15.
  • the unit that brush-washed the polishing head 1 before holding the wafer W is positioned again below the polishing head 1, and the polishing head 1 is lowered.
  • the local polishing pad 18 smaller than the wafer size mounted on the back pad cleaning stage 8 rises relatively toward the polishing head 1, contacts the wafer W, and rotates the polishing head 1 while supplying polishing slurry. To do.
  • FIGS. 8 and 9 are views showing an example of the back pad cleaning stage of the polishing apparatus of the present invention and an example of the back pad cleaning stage of the conventional polishing apparatus.
  • the back pad cleaning stage 8 ′ is provided with nylon bristle 9 ′ and a fluid spray nozzle 10 ′ to clean the polishing head 1 ′.
  • the back pad cleaning stage 8 of the present invention is divided into four parts by the nylon hair 9 on the back pad cleaning stage 8 in addition to the nylon hair 9 and the fluid spray nozzle 10.
  • a local polishing pad 18 is provided at one place of the pad cleaning stage 8.
  • the local polishing pad 18 can be moved up and down separately from the back pad cleaning stage 8. Further, the polishing slurry is supplied to the surface of the wafer W from the fluid spray nozzle 10 common to the cleaning of the polishing head 1.
  • the wafer After the local polishing of the wafer, the wafer is transferred to the polishing stage 19 for secondary polishing and final polishing, and transferred to the unloading stage 17 where the wafer W is peeled from the polishing head 1 by pure water jet and unloaded. It is sent to the next process by the device 14.
  • FIG. 7 is a diagram showing an example of polishing of the entire wafer surface of the polishing apparatus of the present invention.
  • a polishing cloth is pasted on the surface plate at the polishing stage 19. Thereafter, as shown in FIG. 7, the polishing slurry is supplied onto the polishing cloth 6 attached to the surface plate 7, and the polishing head 1 holding the wafer W is slid on the polishing cloth 6 for polishing. .
  • FIG. 12 is a flowchart for explaining the operation of local polishing in the wafer polishing method of the present invention.
  • FIG. 13 is a diagram showing an example of a polishing flow by the wafer polishing method of the present invention.
  • the wafer W is first removed from the cassette (FIG. 13A), and the wafer W is set on the loading stage 16 (FIG. 13B).
  • the polishing head 1 cleans the back pad 2 on the wafer suction surface with pure water before holding the wafer W on the back pad 2 of the template 5 (SC1 in FIG. 12, (C) in FIG. 13).
  • a back pad cleaning method a case where a back pad cleaning stage 8 provided with a local polishing pad 18 is used will be described as an example.
  • FIG. 6 is a diagram showing an example of cleaning of the back pad of the polishing head of the present invention. After the polishing head 1 is lowered and reaches the cleaning position, the back pad cleaning stage 8 with the nylon bristle 9 and the fluid spray nozzle 10 ascends toward the polishing head 1 from below the polishing head 1.
  • the loading stage 16 shown in FIG. 4 moves and moves directly under the polishing head 1 ((D) of FIG. 13), and the polishing head 1 moves down and back.
  • a wafer W is attached to the pad 2 (SC2 in FIG. 12, (E) in FIG. 13).
  • the loading stage 16 moves and moves to the next wafer setting position ((F) of FIG. 13).
  • FIG. 5 is a view for explaining attachment of a wafer to the polishing head of the polishing apparatus of the present invention.
  • the polishing head 1 that has finished the back pad cleaning waits at a predetermined position, and then the wafer W set on the Berglin sponge 12 on the loading stage 16 waits directly under the polishing head 1. Thereafter, the polishing head 1 is lowered to a position where the Bergrin sponge 12 is lightly crushed to hold the wafer W in the wafer pocket of the template 5, and the back pad 2 is deformed by setting the pressure P1 of the polishing head 1 to a negative pressure. Hold the wafer.
  • the wafer polishing method of the present invention includes a step of locally polishing the outer peripheral portion of the wafer W before single-side polishing of the entire wafer surface.
  • the back pad cleaning stage 8 is raised to the polishing head 1 side ((G) in FIG. 13).
  • the local polishing pad 18 rises relatively toward the polishing head 1 ((H) in FIG. 13), the local polishing pad 18 is pressed against the wafer, and polishing slurry is sprayed from the fluid ejection nozzle 10 to perform polishing.
  • the outer periphery of the wafer W is locally polished concentrically (SC3 in FIG. 12, (I) in FIG. 13).
  • the processing peripheral speed can be controlled only by the rotation of the polishing head.
  • the local polishing may be performed as a positional relationship in which the central portion of the local polishing pad is in contact with the outer peripheral portion of the wafer.
  • the load can be adjusted by the height position of the local polishing pad.
  • the polishing head 1 rotates (FIG. 13J), and the polishing head 1 is lowered and installed on the polishing stage 19 (FIG. 13K).
  • a secondary polishing cloth or a finishing polishing cloth is attached to the surface plate 7, and a load is applied with pressure P1 (internal pressure) and pressure P2 (external pressure), and the polishing head 1 and the surface plate 7 are rotated to bring the entire surface to the surface. Polishing is performed (SC4 in FIG. 12, (L) in FIG. 13).
  • the polishing head 1 performs polishing by combining a pressure P1 for operating the wafer holding position and a pressure P2 for operating the guide portion 3 of the template.
  • a pressure P1 for operating the wafer holding position and a pressure P2 for operating the guide portion 3 of the template.
  • Steps (J) to (M) in FIG. 13 can be repeated a plurality of times as in steps (N) to (U) in FIG.
  • the outer peripheral shape of the DSP wafer can be partially corrected by a CMP apparatus before CMP processing.
  • FIG. 10 is a diagram showing an example of a polishing flow using the polishing apparatus of the present invention
  • FIG. 11 is a diagram showing an example of a polishing flow using the conventional polishing apparatus of the present invention.
  • the secondary polishing S3 ′ and S4 ′ are performed after performing DSPS 1 ′.
  • the polishing method of the present invention as shown in FIG.
  • after performing DSPS1 and before CMP local polishing S2 of the outer periphery of the wafer is performed, transferred to the polishing stage 19, and subjected to secondary polishing S3 and S4, and finally, final polishing S5 is performed. Can do.
  • the wafer W subjected to the entire surface polishing is transferred to the unloading stage 17 and the polishing head 1 is lowered (see FIG. 13 (W)), the wafer W is peeled off from the polishing head 1 by pure water jet ((X) in FIG. 13) and sent to the next process (cleaning in the subsequent process) ((Y) in FIG. 13).
  • CMP single-side polishing
  • ESFQR maximum
  • the processing conditions for local polishing are as follows. [Polishing conditions] Equipment: Single-side polishing machine made by Fujikoshi Machined wafer: 300mm diameter P - product ⁇ 100> Silicon wafer Polishing cloth: Polishing cloth Non-woven cloth Abrasive: Polishing slurry KOH-based colloidal silica
  • the processing conditions for the overall polishing are as follows. [Polishing conditions] Equipment: Fujikoshi Machine single-side polishing machine Processed wafer: Diameter 300mm P - Product ⁇ 100> Silicon wafer Polishing cloth: Polishing cloth Non-woven fabric (secondary polishing) and Suede (finish polishing) Abrasive: Polishing slurry KOH-based colloidal silica And NH 4 OH-based colloidal silica
  • the flatness of the wafer was measured using a flatness measuring machine WaferSight 2 manufactured by KLA-Tencor.
  • the outer periphery exclusion range (EE) was 1 mm.
  • ⁇ ESFQR (max) was calculated from the measured flatness of the wafer.
  • Table 1 shows the relationship between the size (diameter) of the local polishing pad and the local polishing pad contact area on the wafer (pad contact area on the wafer) in each example.
  • FIG. 15 shows the result of ⁇ ESFQR (max) in Example 1-5.
  • ⁇ ESFQR (max) showed a negative value or a small positive value.
  • the value of ESFQR (max) after polishing the entire wafer surface was reduced by local polishing, and the flatness of the wafer could be improved.
  • ⁇ ESFQR (max) can be suppressed to be small, and deterioration of flatness due to the fact that shape matching is not performed in the double-side polishing process and the single-side polishing process can be suppressed to a low level.
  • the peripheral jump correction effect is increased.
  • the correction range of the local portion is 100 mm from the outer peripheral edge of the wafer. A range is preferred.
  • Example 6 local polishing and entire surface polishing were performed under the same conditions as in Example 1-5. In Comparative Example 1, the whole surface polishing was performed under the same conditions as in Example 1-5.
  • the flatness of the wafer was measured using a flatness measuring machine WaferSight 2 manufactured by KLA-Tencor.
  • the outer periphery exclusion range (EE) was 1 mm.
  • FIG. 16 shows a wafer shape profile after DSP processing, a wafer shape profile after local polishing processing, a wafer shape profile after CMP processing, a polishing allowance profile by local polishing processing, and a polishing allowance profile by CMP processing in Example 6. Indicates.
  • FIG. 17 shows a wafer shape profile after DSP processing, a wafer shape profile after CMP processing, and a polishing allowance profile by CMP processing of Comparative Example 1.
  • the flatness of the wafer was measured using a flatness measuring machine WaferSight 2 manufactured by KLA-Tencor.
  • the outer periphery exclusion range (EE) was 1 mm.
  • FIG. 18 shows a state where ESFQR (max) when performing CMP processing without performing local polishing (Comparative Example 2) and local polishing using a local polishing pad having a diameter of 50.8 mm according to the present invention as in the conventional method.
  • FIG. 6 is a diagram comparing ESFQR (max) when performing CMP processing up to (Example 7).
  • the polishing apparatus and polishing method of the present invention As described above, by using the polishing apparatus and polishing method of the present invention and performing local polishing with a local polishing pad before CMP processing, the flatness variation of the wafer could be improved.
  • the present invention is not limited to the above embodiment.
  • the above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.

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Abstract

The present invention is a polishing device that is provided with a polishing head, a surface plate to which a polishing cloth is affixed, a loading stage for attaching a wafer to the polishing head, and an unloading stage for detaching the wafer from the polishing head, and polishes the wafer held by the polishing head. The polishing device is characterized by being further provided with a local polishing pad smaller than the wafer and movable up and down, and being able to locally polish a wafer outer peripheral portion concentrically by rotating the polishing head that holds the wafer while bringing the wafer held by the polishing head and the local polishing pad into contact with each other by relatively elevating the local polishing pad toward the polishing head. Consequently, provided are a polishing device and a wafer polishing method, with which a wafer shape after CMP processing can be planarized by further improving shape matching between polishing processing, such as DSP processing, before the CMP processing and the CMP processing as compared to conventional ones.

Description

研磨装置、ウェーハの研磨方法、及び、ウェーハの製造方法Polishing apparatus, wafer polishing method, and wafer manufacturing method
　本発明は、研磨装置、ウェーハの研磨方法、及び、ウェーハの製造方法に関する。 The present invention relates to a polishing apparatus, a wafer polishing method, and a wafer manufacturing method.
　半導体ウェーハの研磨は、両面研磨（ＤＳＰ）加工後に片面研磨（ＣＭＰ）加工で二次研磨と仕上げ研磨を行うフローが一般的である。 For polishing a semiconductor wafer, a flow in which secondary polishing and final polishing are performed by single-side polishing (CMP) processing after double-side polishing (DSP) processing is general.
　図１１は従来のウェーハの研磨フローの例を示す図である。ウェーハをＤＳＰ加工した（Ｓ１’）後に、二次研磨加工を行い（Ｓ３’）、最後に仕上げ研磨加工を行っている（Ｓ５’）。二次研磨加工は必要に応じ２回以上繰り返してもよい（Ｓ４’）。 FIG. 11 is a diagram showing an example of a conventional wafer polishing flow. After the wafer is subjected to DSP processing (S1 '), secondary polishing processing is performed (S3'), and finally final polishing processing is performed (S5 '). The secondary polishing process may be repeated twice or more as necessary (S4 ').
　ウェーハはＤＳＰ加工とＣＭＰ加工の取り代総和により形状が作り出されるため、ＤＳＰ形状の変化がウェーハのフラットネスバラツキに大きく影響している。 Since the shape of the wafer is created by the total machining allowance of DSP processing and CMP processing, changes in the DSP shape greatly affect the flatness variation of the wafer.
　ＣＭＰ加工はＤＳＰ加工後のウェーハに対して行っている。ＤＳＰ加工において、ウェーハ外周形状はハネ形状を狙い作り込まれている。その後のＣＭＰ加工では全体的に前形状にならうように狙っているが、ウェーハの最外周部がダレないようにするため、若干のはねる形状になるように設定している。それにより、ＤＳＰとＣＭＰでの形状マッチングがうまく行われず、ＤＳＰ形状をＣＭＰ加工で悪化させてしまうことがあった。 CMP processing is performed on the wafer after DSP processing. In the DSP processing, the outer peripheral shape of the wafer is made with the aim of a honeycomb shape. Subsequent CMP processing aims to conform to the previous shape as a whole, but in order to prevent the outermost peripheral portion of the wafer from sagging, it is set to have a slight spring shape. As a result, shape matching between the DSP and CMP is not performed well, and the DSP shape may be deteriorated by CMP processing.
国際公開第２０１０／０２３８２９号公報International Publication No. 2010/023829 特開２０１２－３５３９３号公報JP 2012-35393 A 国際公開第２０１３／００１７１９号公報International Publication No. 2013/001719
　上記のように、従来、両面研磨（ＤＳＰ）加工などの研磨加工によるウェーハ外周形状はハネ形状になることがあり、ＣＭＰ加工ではウェーハ最外周部をはねる形状に設定しているため、ＤＳＰ加工などのＣＭＰ加工前の研磨加工とＣＭＰ加工での形状マッチングがうまく行われず、ＤＳＰ加工などによる研磨加工形状をＣＭＰ加工で悪化させてしまうことがあった。ＣＭＰ加工後のウェーハの品質を向上させるためには、ＤＳＰ加工などのＣＭＰ加工前の研磨加工とＣＭＰ加工での形状マッチングをさせる必要がある。 As described above, conventionally, the wafer outer peripheral shape by polishing processing such as double-side polishing (DSP) processing may become a honeycomb shape, and the CMP processing is set to a shape that splashes the outermost peripheral portion of the wafer, so DSP processing or the like The shape matching between the polishing process and the CMP process before the CMP process is not performed well, and the polished process shape by the DSP process or the like may be deteriorated by the CMP process. In order to improve the quality of the wafer after the CMP processing, it is necessary to perform shape matching in the CMP processing and polishing processing before the CMP processing such as DSP processing.
　本発明は上記問題に鑑みてなされたものであり、ＤＳＰ加工などのＣＭＰ加工前の研磨加工とＣＭＰ加工での形状マッチングを従来よりも向上させることで、ＣＭＰ加工後のウェーハ形状を平坦化することができる研磨装置及びウェーハの研磨方法を提供することを目的とする。 The present invention has been made in view of the above problems, and planarizes the wafer shape after the CMP process by improving the polishing process before the CMP process such as the DSP process and the shape matching in the CMP process. An object of the present invention is to provide a polishing apparatus and a method for polishing a wafer.
　上記課題を解決するために、本発明は、ウェーハを保持するための研磨ヘッドと、前記ウェーハを研磨するための研磨布が貼り付けられた定盤と、前記ウェーハを前記研磨ヘッドへ装着するためのローディングステージと、前記ウェーハを前記研磨ヘッドから剥離するためのアンローディングステージとを具備し、前記研磨ヘッドで保持した前記ウェーハを研磨する研磨装置において、さらに、上下動することができる前記ウェーハより小さい局所研磨パッドを具備し、該局所研磨パッドを前記研磨ヘッドに向けて相対的に上昇させることで、前記研磨ヘッドで保持した前記ウェーハと前記局所研磨パッドとを接触させながら、前記ウェーハを保持した前記研磨ヘッドを回転させることで前記ウェーハ外周部を同心円状に局所研磨可能なものであることを特徴とする研磨装置を提供する。 In order to solve the above problems, the present invention provides a polishing head for holding a wafer, a surface plate to which a polishing cloth for polishing the wafer is attached, and mounting the wafer on the polishing head. In the polishing apparatus for polishing the wafer held by the polishing head, the loading stage and an unloading stage for peeling the wafer from the polishing head can be further moved up and down. A small local polishing pad is provided and the wafer is held while the local polishing pad is brought into contact with the wafer held by the polishing head by raising the local polishing pad relatively to the polishing head. By rotating the polishing head, the outer periphery of the wafer can be locally polished concentrically. To provide a polishing apparatus which is characterized in that the.
　このような研磨装置であれば、ウェーハ外周部がはねた形状に作り込まれているものであっても、ウェーハの局所部（ウェーハの外周部）を修正する機能を有した研磨装置（ＣＭＰ装置）を用いることで、ＣＭＰ加工での形状マッチングを行うことができ、高平坦なウェーハを得ることが可能となる。 With such a polishing apparatus, a polishing apparatus (CMP) having a function of correcting a local portion of the wafer (outer peripheral portion of the wafer) even if the outer peripheral portion of the wafer is formed in a splashed shape. By using the apparatus, it is possible to perform shape matching by CMP processing and obtain a highly flat wafer.
　このとき、前記局所研磨パッドは、前記ウェーハの外周と前記局所研磨パッドの中心位置で接触し、研磨するものであることが好ましい。 In this case, the local polishing pad is preferably in contact with the outer periphery of the wafer at the center position of the local polishing pad for polishing.
　このような研磨装置であれば、ウェーハ外周部のはねた形状をより確実に均一に研磨することが可能となる。 Such a polishing apparatus makes it possible to polish the splashed shape of the outer peripheral portion of the wafer more uniformly and reliably.
　また、このとき、前記研磨装置は、前記研磨ヘッドを洗浄するための、上下動することができるバックパッド洗浄ステージを具備し、前記局所研磨パッドが前記バックパッド洗浄ステージに配設されたものであり、前記バックパッド洗浄ステージと前記局所研磨パッドとを別々に上下動させることができるものであることが好ましい。 At this time, the polishing apparatus includes a back pad cleaning stage that can move up and down for cleaning the polishing head, and the local polishing pad is disposed on the back pad cleaning stage. It is preferable that the back pad cleaning stage and the local polishing pad can be moved up and down separately.
　このような研磨装置であれば、研磨装置のバックパッド洗浄ステージに局所研磨パッドを配設することで、ウェーハ外周部のはねた形状を容易に修正することができ、ＣＭＰ加工での形状マッチングを行うことが可能となる。 With such a polishing apparatus, by disposing a local polishing pad on the back pad cleaning stage of the polishing apparatus, the splashed shape of the outer periphery of the wafer can be easily corrected, and shape matching in CMP processing is possible. Can be performed.
　また、本発明は研磨装置を用いたウェーハの研磨方法であって、前記ウェーハ全面の片面研磨より前に、前記局所研磨パッドを前記研磨ヘッドに向けて相対的に上昇させることで、前記研磨ヘッドで保持した前記ウェーハと前記局所研磨パッドとを接触させながら、前記ウェーハを保持した前記研磨ヘッドを回転させることで前記ウェーハ外周部を同心円状に局所研磨することを特徴とするウェーハの研磨方法を提供する。 The present invention is also a wafer polishing method using a polishing apparatus, wherein the local polishing pad is relatively raised toward the polishing head before single-side polishing of the entire wafer surface, whereby the polishing head A method of polishing a wafer, wherein the wafer outer peripheral portion is locally polished concentrically by rotating the polishing head holding the wafer while bringing the wafer held in contact with the local polishing pad. provide.
　このような研磨方法であれば、従来は、例えばＤＳＰによりウェーハ外周部がはねた形状に作り込まれ、ＣＭＰ加工後で修正できずに平坦度が悪くなっていたものを、ウェーハの局所部（ウェーハの外周部）を修正する機能を有した研磨装置（ＣＭＰ装置）を用いて局所研磨することで、ＣＭＰ加工での形状マッチングを行うことができ、高平坦なウェーハを得ることが可能となる。 In the case of such a polishing method, conventionally, for example, the peripheral portion of the wafer is formed in a shape that is splashed by a DSP and cannot be corrected after the CMP process, and the flatness is deteriorated. By performing local polishing using a polishing device (CMP device) that has a function of correcting (the outer periphery of the wafer), shape matching in CMP processing can be performed, and a highly flat wafer can be obtained. Become.
　また、このとき、前記局所研磨パッドが、前記ウェーハの外周と前記局所研磨パッドの中心位置で接触することが好ましい。 At this time, it is preferable that the local polishing pad is in contact with the outer periphery of the wafer at the center position of the local polishing pad.
　このような研磨方法であれば、従来は、例えばＤＳＰによりウェーハ外周部のはねた形状をより確実に均一に研磨することができ、高平坦なウェーハを得ることが可能となる。 With such a polishing method, conventionally, the splashed shape of the outer periphery of the wafer can be more reliably and uniformly polished by, for example, a DSP, and a highly flat wafer can be obtained.
　また、このとき、前記ウェーハを、前記ウェーハ外周端から半径方向に２０～５０ｍｍの範囲内だけ研磨することが好ましい。 At this time, it is preferable that the wafer is polished only within a range of 20 to 50 mm in the radial direction from the outer peripheral edge of the wafer.
　このような研磨方法であれば、ウェーハ外周部のはねた形状だけをより効果的に修正することができ、高平坦なウェーハを得ることが可能となる。 With such a polishing method, only the splashed shape of the outer peripheral portion of the wafer can be corrected more effectively, and a highly flat wafer can be obtained.
　また、このとき、前記ウェーハ外周部を同心円状に局所研磨するときに、前記ウェーハを保持した前記研磨ヘッドの前記局所研磨パッドに対する相対的な高さ位置を変えることで研磨荷重を制御することが好ましい。 Further, at this time, when the wafer outer peripheral portion is locally polished concentrically, the polishing load can be controlled by changing the relative height position of the polishing head holding the wafer with respect to the local polishing pad. preferable.
　このような研磨方法であれば、ウェーハと局所研磨パッドを接触させ、ウェーハ外周部の局所研磨の研磨荷重を容易に制御することが可能となる。 With such a polishing method, the wafer and the local polishing pad can be brought into contact with each other, and the polishing load for local polishing on the outer periphery of the wafer can be easily controlled.
　また、このとき、局所研磨する前記ウェーハを、両面研磨したウェーハとすることが好ましい。 Further, at this time, the wafer to be locally polished is preferably a double-side polished wafer.
　このような研磨方法であれば、ＤＳＰにより作り込まれたウェーハ外周部のはねた形状を局所的に修正することで、ＣＭＰ加工での形状マッチングを行うことができ、確実に高平坦なウェーハを得ることが可能となる。 With such a polishing method, it is possible to perform shape matching in CMP processing by locally correcting the splashed shape of the outer periphery of the wafer created by the DSP, and to ensure a highly flat wafer Can be obtained.
　また、本発明は上記のウェーハの研磨方法により、ウェーハ外周部を局所研磨する工程を含むことを特徴とするウェーハの製造方法を提供する。 Further, the present invention provides a method for manufacturing a wafer, comprising a step of locally polishing the outer periphery of the wafer by the above-described wafer polishing method.
　このようなウェーハの製造方法であれば、高平坦なウェーハを製造することが可能となる。 With such a wafer manufacturing method, a highly flat wafer can be manufactured.
　本発明の研磨装置及びウェーハの研磨方法であれば、例えばＤＳＰ等によりウェーハの外周部がはねた形状に作り込まれ、ＣＭＰ加工後で修正できずに平坦度が悪くなっていたものを、ウェーハの局所部（ウェーハの外周部）を修正する機能を有した研磨装置（ＣＭＰ装置）を用いることで、ＣＭＰ加工での形状マッチングを行うことができ、高平坦なウェーハを得ることが可能となる。 If the polishing apparatus and the wafer polishing method of the present invention, for example, the outer peripheral portion of the wafer is formed into a splashed shape by a DSP or the like, and the flatness is poor without being corrected after CMP processing, By using a polishing device (CMP device) that has the function of correcting the local portion of the wafer (outer peripheral portion of the wafer), it is possible to perform shape matching in CMP processing and obtain a highly flat wafer. Become.
本発明の研磨装置における局所研磨パッドの例を示す図である。It is a figure which shows the example of the local polishing pad in the polishing apparatus of this invention. 本発明の研磨装置における局所研磨パッドの図１とは異なる例を示す図である。It is a figure which shows the example different from FIG. 1 of the local polishing pad in the grinding | polishing apparatus of this invention. 本発明の研磨装置のバックパッド洗浄ステージの例を示す図である。It is a figure which shows the example of the back pad washing | cleaning stage of the grinding | polishing apparatus of this invention. 本発明の研磨装置の機構の例を示す図である。It is a figure which shows the example of the mechanism of the grinding | polishing apparatus of this invention. 本発明の研磨装置の研磨ヘッドへのウェーハの貼り付けを説明する図である。It is a figure explaining sticking of the wafer to the polish head of the polish device of the present invention. 本発明の研磨装置のバックパッドの洗浄の例を示す図である。It is a figure which shows the example of the washing | cleaning of the back pad of the grinding | polishing apparatus of this invention. 本発明の研磨装置のウェーハ全面の研磨加工の例を示す図である。It is a figure which shows the example of the grinding | polishing process of the wafer whole surface of the grinding | polishing apparatus of this invention. 従来の研磨装置のバックパッドの洗浄の例を示す図である。It is a figure which shows the example of the washing | cleaning of the back pad of the conventional grinding | polishing apparatus. 従来の研磨装置のバックパッド洗浄ステージの例を示す図である。It is a figure which shows the example of the back pad washing | cleaning stage of the conventional grinding | polishing apparatus. 本発明の研磨装置を用いた研磨フローの例を示す図である。It is a figure which shows the example of the grinding | polishing flow using the grinding | polishing apparatus of this invention. 従来の研磨装置を用いた研磨フローの例を示す図である。It is a figure which shows the example of the grinding | polishing flow using the conventional grinding | polishing apparatus. 本発明のウェーハの研磨方法における局所研磨加工の動作を説明するフロー図である。It is a flowchart explaining operation | movement of the local grinding | polishing process in the grinding | polishing method of the wafer of this invention. 本発明のウェーハの研磨方法による研磨フローの例を示す図である。It is a figure which shows the example of the grinding | polishing flow by the grinding | polishing method of the wafer of this invention. 従来のウェーハの研磨方法による研磨フローの例を示す図である。It is a figure which shows the example of the grinding | polishing flow by the conventional grinding | polishing method of a wafer. 実施例１－５のΔＥＳＦＱＲ（ｍａｘ）の結果を示す図である。It is a figure which shows the result of (DELTA) ESFQR (max) of Example 1-5. 本発明の研磨方法（実施例６）によるＤＳＰ加工後のウェーハ形状プロファイル、局所研磨加工後のウェーハ形状プロファイル、ＣＭＰ加工後のウェーハ形状プロファイル、及び、局所研磨加工による研磨取り代プロファイル、ＣＭＰ加工による研磨取り代プロファイルを示す図である。Wafer shape profile after DSP processing by the polishing method of the present invention (Example 6), wafer shape profile after local polishing processing, wafer shape profile after CMP processing, polishing allowance profile by local polishing processing, by CMP processing It is a figure which shows a grinding | polishing machining allowance profile. 従来の研磨方法（比較例１）によるＤＳＰ加工後のウェーハ形状プロファイル、ＣＭＰ加工後のウェーハ形状プロファイル、及び、ＣＭＰ加工による研磨取り代プロファイルを示す図である。It is a figure which shows the wafer shape profile after DSP processing by the conventional grinding | polishing method (comparative example 1), the wafer shape profile after CMP processing, and the polishing allowance profile by CMP processing. 従来の研磨方法（比較例２）によるＥＳＦＱＲ（ｍａｘ）と本発明の研磨方法（実施例７）によるＥＳＦＱＲ（ｍａｘ）を比較した図である。It is the figure which compared ESFQR (max) by the conventional grinding | polishing method (comparative example 2), and ESFQR (max) by the grinding | polishing method (Example 7) of this invention.
　以下、本発明について実施の形態を説明するが、本発明はこれに限定されるものではない。 Hereinafter, embodiments of the present invention will be described, but the present invention is not limited thereto.
　研磨工程におけるウェーハのフラットネスはＤＳＰ加工などのＣＭＰ加工前の研磨加工とＣＭＰ加工の取り代総和によって作られている。 The flatness of the wafer in the polishing process is created by the total amount of polishing and CMP processing before DSP processing such as DSP processing.
　ＣＭＰ加工前の研磨加工後のウェーハ外周形状が大きく変化すると、ＣＭＰ加工では形状を平坦に修正しきれず、高平坦度なウェーハを作ることができないという問題があった。また、フラットネスの形状悪化はウェーハ外周部に起因することが多い。 When the wafer outer peripheral shape after the polishing process before the CMP process changes greatly, there is a problem that the shape cannot be completely corrected by the CMP process and a wafer with high flatness cannot be produced. In addition, the shape deterioration of flatness is often caused by the outer peripheral portion of the wafer.
　ＤＳＰ加工は、外周ダレのない平坦な形状になるように狙うため、外周部が跳ねた形状になりやすい。その後のＣＭＰ加工では外周をダレない様にするため、若干のハネ形状になり、ＤＳＰ形状が大きなハネ形状にばらついた時に、フラットネスが悪くなってしまう。 Since DSP processing aims at a flat shape with no outer periphery sag, it tends to be a shape in which the outer periphery is bounced. In order to prevent the outer periphery from sagging in the subsequent CMP processing, the shape becomes slightly crushed, and the flatness becomes worse when the DSP shape varies into a large flared shape.
　そこで、本発明者等はこのような問題を解決すべく鋭意検討を重ねた。その結果、ＣＭＰ加工前にウェーハ形状を局所的に変化させ、ＣＭＰ加工前のウェーハの形状とＣＭＰの形状をマッチングさせることで、フラットネス悪化を抑制できることに想到し、本発明を完成させた。 Therefore, the present inventors have conducted intensive studies to solve such problems. As a result, the inventors have conceived that deterioration of flatness can be suppressed by locally changing the wafer shape before CMP processing and matching the shape of the wafer before CMP processing with the shape of CMP, thereby completing the present invention.
　まず、本発明の研磨装置の例を説明する。本発明の研磨装置は、研磨装置に局所部の研磨をする機能を追加した装置である。 First, an example of the polishing apparatus of the present invention will be described. The polishing apparatus of the present invention is an apparatus in which a function for polishing a local portion is added to the polishing apparatus.
　図４は本発明の研磨装置の機構の例を示す図である。本発明の研磨装置１１は、ウェーハのローディング装置１３のカセットからウェーハを取り出し、研磨ヘッドにウェーハを貼り付けるためのローディングステージ１６にウェーハをセットする。研磨ヘッドはナイロン毛ブラシによりウェーハ吸着面のバックパッドを純水洗浄した状態でローディングステージ１６が研磨ヘッド下に来ることを待機している。ローディングステージ１６が研磨ヘッド下に停止後、図５に示すように、研磨ヘッド１はウェーハＷを貼り付けるために降下してセラミクスリング４下のテンプレート５のポケット穴にウェーハＷが入った後、研磨ヘッド１の内圧Ｐ１を負圧にしてウェーハＷをバックパッド２に固定する。 FIG. 4 is a view showing an example of the mechanism of the polishing apparatus of the present invention. The polishing apparatus 11 of the present invention takes out a wafer from a cassette of the wafer loading apparatus 13 and sets the wafer on a loading stage 16 for attaching the wafer to the polishing head. The polishing head waits for the loading stage 16 to come under the polishing head in a state in which the back pad on the wafer suction surface is washed with pure water with a nylon bristle brush. After the loading stage 16 stops under the polishing head, as shown in FIG. 5, the polishing head 1 descends to attach the wafer W and the wafer W enters the pocket hole of the template 5 under the ceramic ring 4. The wafer W is fixed to the back pad 2 by setting the internal pressure P1 of the polishing head 1 to a negative pressure.
　本発明の研磨装置は、さらに、研磨ヘッド１にウェーハＷが保持された後、図１に示すように、研磨ヘッド１が降下して、上下動できるウェーハサイズより小さい局所研磨パッド１８が研磨ヘッド１に向けて相対的に上昇し、ウェーハＷと接触して、研磨スラリーを供給しながら研磨ヘッド１を回転させてウェーハＷの局所部を同心円状に研磨することができるものである。 In the polishing apparatus of the present invention, after the wafer W is held on the polishing head 1, the polishing head 1 is moved down and the local polishing pad 18 smaller than the wafer size that can move up and down is shown in FIG. As a result, the local portion of the wafer W can be polished concentrically by rotating the polishing head 1 while supplying the polishing slurry.
　このとき、加工周速は研磨ヘッドの回転のみで制御するものであることが好ましい。 At this time, the processing peripheral speed is preferably controlled only by the rotation of the polishing head.
　また、このとき、局所研磨パッド１８は、局所研磨パッド１８の中心位置とウェーハＷ外周の位置で接触するものであることが好ましい。 Further, at this time, the local polishing pad 18 is preferably in contact with the center position of the local polishing pad 18 at the position of the outer periphery of the wafer W.
　図２に本発明の研磨装置における局所研磨パッドの図１とは異なる例を示す。本発明の研磨装置は、ローディング／アンローディング機構１５のバックパッド洗浄ステージ８に局所部の研磨をする局所研磨パッド１８を配設したものであってもよい。この際、局所部の研磨は、研磨ヘッド１にウェーハＷが保持された後、ウェーハＷ保持前に研磨ヘッド１をブラシ洗浄したユニットが再び研磨ヘッド１の下部に位置し、研磨ヘッド１が降下してバックパッド洗浄ステージ８に装備されたウェーハサイズより小さい局所研磨パッド１８が研磨ヘッド１に向けて相対的に上昇し、ウェーハＷと接触して、研磨スラリーを供給しながら研磨ヘッド１を回転させることで行う。 FIG. 2 shows an example different from FIG. 1 of the local polishing pad in the polishing apparatus of the present invention. In the polishing apparatus of the present invention, a local polishing pad 18 for polishing a local portion may be disposed on the back pad cleaning stage 8 of the loading / unloading mechanism 15. At this time, in the local portion polishing, after the wafer W is held by the polishing head 1, the unit that brush-washed the polishing head 1 before holding the wafer W is positioned again below the polishing head 1, and the polishing head 1 is lowered. Then, the local polishing pad 18 smaller than the wafer size mounted on the back pad cleaning stage 8 rises relatively toward the polishing head 1, contacts the wafer W, and rotates the polishing head 1 while supplying polishing slurry. To do.
　図６及び図８は、本発明の研磨装置のバックパッドの洗浄の例、及び、従来の研磨装置のバックパッドの洗浄の例を示す図である。また、図３及び図９は、本発明の研磨装置のバックパッド洗浄ステージの例、及び、従来の研磨装置のバックパッド洗浄ステージの例を示す図である。従来、図８及び図９に示すように、バックパッド洗浄ステージ８’には、ナイロン毛９’及び流体噴霧ノズル１０’が設けられ、研磨ヘッド１’を洗浄している。一方で、図３に示すように、本発明のバックパッド洗浄ステージ８には、ナイロン毛９及び流体噴霧ノズル１０に加えて、バックパッド洗浄ステージ８上のナイロン毛９により四分割されているバックパッド洗浄ステージ８の一か所に局所研磨パッド１８が設けられている。また、本発明のバックパッド洗浄ステージ８は局所研磨パッド１８がバックパッド洗浄ステージ８とは別々に上下に動作させることができるものである。また、研磨スラリーは研磨ヘッド１洗浄時と共通の流体噴霧ノズル１０からウェーハＷ表面に供給する。 6 and 8 are diagrams showing an example of cleaning the back pad of the polishing apparatus of the present invention and an example of cleaning the back pad of the conventional polishing apparatus. 3 and 9 are views showing an example of the back pad cleaning stage of the polishing apparatus of the present invention and an example of the back pad cleaning stage of the conventional polishing apparatus. Conventionally, as shown in FIGS. 8 and 9, the back pad cleaning stage 8 ′ is provided with nylon bristle 9 ′ and a fluid spray nozzle 10 ′ to clean the polishing head 1 ′. On the other hand, as shown in FIG. 3, the back pad cleaning stage 8 of the present invention is divided into four parts by the nylon hair 9 on the back pad cleaning stage 8 in addition to the nylon hair 9 and the fluid spray nozzle 10. A local polishing pad 18 is provided at one place of the pad cleaning stage 8. In the back pad cleaning stage 8 of the present invention, the local polishing pad 18 can be moved up and down separately from the back pad cleaning stage 8. Further, the polishing slurry is supplied to the surface of the wafer W from the fluid spray nozzle 10 common to the cleaning of the polishing head 1.
　ウェーハの局所研磨後、ウェーハは研磨加工ステージ１９に搬送されて、二次研磨と仕上げ研磨を行い、アンローディングステージ１７に搬送されてウェーハＷが純水噴射により研磨ヘッド１から剥離され、アンローディング装置１４により次工程に送られる。 After the local polishing of the wafer, the wafer is transferred to the polishing stage 19 for secondary polishing and final polishing, and transferred to the unloading stage 17 where the wafer W is peeled from the polishing head 1 by pure water jet and unloaded. It is sent to the next process by the device 14.
　図７は本発明の研磨装置のウェーハ全面の研磨加工の例を示す図である。研磨加工ステージ１９で定盤上に研磨布を貼り付ける。その後、図７に示すように、定盤７に貼り付けられた研磨布６上に研磨スラリーを供給し、ウェーハＷを保持した研磨ヘッド１を研磨布６に摺動させて研磨を行っている。 FIG. 7 is a diagram showing an example of polishing of the entire wafer surface of the polishing apparatus of the present invention. A polishing cloth is pasted on the surface plate at the polishing stage 19. Thereafter, as shown in FIG. 7, the polishing slurry is supplied onto the polishing cloth 6 attached to the surface plate 7, and the polishing head 1 holding the wafer W is slid on the polishing cloth 6 for polishing. .
　次に、本発明のウェーハの研磨方法について図１２及び図１３を用いて説明する。図１２は本発明のウェーハの研磨方法における局所研磨加工の動作を説明するフロー図である。また、図１３は本発明のウェーハの研磨方法による研磨フローの例を示す図である。 Next, the wafer polishing method of the present invention will be described with reference to FIGS. FIG. 12 is a flowchart for explaining the operation of local polishing in the wafer polishing method of the present invention. FIG. 13 is a diagram showing an example of a polishing flow by the wafer polishing method of the present invention.
　本発明のウェーハの研磨方法では、まずカセットからウェーハＷを取り出し（図１３の（Ａ））、ローディングステージ１６にウェーハＷをセットする（図１３の（Ｂ））。 In the wafer polishing method of the present invention, the wafer W is first removed from the cassette (FIG. 13A), and the wafer W is set on the loading stage 16 (FIG. 13B).
　研磨ヘッド１は、ウェーハＷをテンプレート５のバックパッド２に保持する前に、ウェーハ吸着面のバックパッド２を純水洗浄した状態にする（図１２のＳＣ１、図１３の（Ｃ））。ここで、バックパッドの洗浄方法として、バックパッド洗浄ステージ８に局所研磨パッド１８を配設したものを用いる場合を例に説明する。図６は、本発明の研磨ヘッドのバックパッドの洗浄の例を示す図である。研磨ヘッド１が降下し洗浄ポジションに達した後、研磨ヘッド１下側からナイロン毛９と流体噴霧ノズル１０が付いたバックパッド洗浄ステージ８が研磨ヘッド１に向かって上昇して来る。流体噴霧ノズル１０から純水をバックパッド２に向けて噴霧しながら、ナイロン毛（ナイロン製のブラシ）９をバックパッド２に接触させ、バックパッド洗浄ステージ８と研磨ヘッド１の両方を回転させて洗浄する。研磨ヘッド１とバックパッド洗浄ステージ８の回転中心Ｒ１、Ｒ２はズレておりバックパッドのガイド部３も同時にブラシ洗浄する。このとき、局所研磨パッド１８はナイロン毛９より低い位置で待機している。 The polishing head 1 cleans the back pad 2 on the wafer suction surface with pure water before holding the wafer W on the back pad 2 of the template 5 (SC1 in FIG. 12, (C) in FIG. 13). Here, as a back pad cleaning method, a case where a back pad cleaning stage 8 provided with a local polishing pad 18 is used will be described as an example. FIG. 6 is a diagram showing an example of cleaning of the back pad of the polishing head of the present invention. After the polishing head 1 is lowered and reaches the cleaning position, the back pad cleaning stage 8 with the nylon bristle 9 and the fluid spray nozzle 10 ascends toward the polishing head 1 from below the polishing head 1. While spraying pure water from the fluid spray nozzle 10 toward the back pad 2, a nylon hair (nylon brush) 9 is brought into contact with the back pad 2, and both the back pad cleaning stage 8 and the polishing head 1 are rotated. Wash. The rotation centers R1 and R2 of the polishing head 1 and the back pad cleaning stage 8 are misaligned, and the back pad guide portion 3 is also brush cleaned. At this time, the local polishing pad 18 stands by at a position lower than the nylon hair 9.
　研磨ヘッド１のバックパッド２を純水洗浄した後、図４に示されるローディングステージ１６が移動して研磨ヘッド１直下に移動し（図１３の（Ｄ））、研磨ヘッド１が下降してバックパッド２にウェーハＷを貼り付ける（図１２のＳＣ２、図１３の（Ｅ））。その後、ローディングステージ１６が移動して次のウェーハのセット位置へ移動する（図１３の（Ｆ））。 After the back pad 2 of the polishing head 1 is cleaned with pure water, the loading stage 16 shown in FIG. 4 moves and moves directly under the polishing head 1 ((D) of FIG. 13), and the polishing head 1 moves down and back. A wafer W is attached to the pad 2 (SC2 in FIG. 12, (E) in FIG. 13). Thereafter, the loading stage 16 moves and moves to the next wafer setting position ((F) of FIG. 13).
　図５は、本発明の研磨装置の研磨ヘッドへのウェーハの貼り付けを説明する図である。バックパッド洗浄を終えた研磨ヘッド１が所定の位置に待機し、次にローディングステージ１６上のベルクリンスポンジ１２上にセットされたウェーハＷが研磨ヘッド１直下に待機する。その後、研磨ヘッド１がベルクリンスポンジ１２を軽くつぶす位置まで降下してテンプレート５のウェーハポケットにウェーハＷを保持し、さらに、研磨ヘッド１の圧力Ｐ１を負圧にして、バックパッド２を変形させてウェーハ保持をする。 FIG. 5 is a view for explaining attachment of a wafer to the polishing head of the polishing apparatus of the present invention. The polishing head 1 that has finished the back pad cleaning waits at a predetermined position, and then the wafer W set on the Berglin sponge 12 on the loading stage 16 waits directly under the polishing head 1. Thereafter, the polishing head 1 is lowered to a position where the Bergrin sponge 12 is lightly crushed to hold the wafer W in the wafer pocket of the template 5, and the back pad 2 is deformed by setting the pressure P1 of the polishing head 1 to a negative pressure. Hold the wafer.
　図１４に示す従来のウェーハの研磨方法による研磨フローの例とは異なり、本発明のウェーハの研磨方法は、ウェーハ全面の片面研磨より前に、ウェーハＷの外周部を局所研磨する工程を含む。局所研磨する工程では、まず、バックパッド洗浄ステージ８が研磨ヘッド１側に上昇する（図１３の（Ｇ））。さらに、局所研磨パッド１８が研磨ヘッド１に向かって相対的に上昇し（図１３の（Ｈ））、局所研磨パッド１８をウェーハに押し付けて、研磨スラリーを流体噴出ノズル１０から噴射して、研磨ヘッド１を回転させることでウェーハＷの外周部を同心円状に局所研磨をする（図１２のＳＣ３、図１３の（Ｉ））。 Unlike the example of the polishing flow by the conventional wafer polishing method shown in FIG. 14, the wafer polishing method of the present invention includes a step of locally polishing the outer peripheral portion of the wafer W before single-side polishing of the entire wafer surface. In the local polishing step, first, the back pad cleaning stage 8 is raised to the polishing head 1 side ((G) in FIG. 13). Further, the local polishing pad 18 rises relatively toward the polishing head 1 ((H) in FIG. 13), the local polishing pad 18 is pressed against the wafer, and polishing slurry is sprayed from the fluid ejection nozzle 10 to perform polishing. By rotating the head 1, the outer periphery of the wafer W is locally polished concentrically (SC3 in FIG. 12, (I) in FIG. 13).
　また、このとき、加工周速は研磨ヘッドの回転のみで制御することができる。 At this time, the processing peripheral speed can be controlled only by the rotation of the polishing head.
　また、このとき、局所研磨は、局所研磨パッド中心部とウェーハ外周部が接する位置関係として行ってもよい。 At this time, the local polishing may be performed as a positional relationship in which the central portion of the local polishing pad is in contact with the outer peripheral portion of the wafer.
　また、このとき、ウェーハの直径に関わらず、ウェーハの外周端から半径方向に２０～５０ｍｍの範囲内だけ研磨することが好ましい。特に、３００ｍｍ以上といった大直径のウェーハでは、この領域の平坦度が特に問題となるからである。 At this time, it is preferable to polish only within the range of 20 to 50 mm in the radial direction from the outer peripheral edge of the wafer, regardless of the diameter of the wafer. This is because the flatness of this region is particularly problematic for a wafer having a large diameter of 300 mm or more.
　また、このとき、荷重は局所研磨パッドの高さ位置で調節することができる。 At this time, the load can be adjusted by the height position of the local polishing pad.
　ウェーハを局所研磨した後、研磨ヘッド１が旋回し（図１３の（Ｊ））、研磨ヘッド１が降下して研磨加工ステージ１９に設置される（図１３の（Ｋ））。 After the wafer is locally polished, the polishing head 1 rotates (FIG. 13J), and the polishing head 1 is lowered and installed on the polishing stage 19 (FIG. 13K).
　局所研磨したウェーハは、定盤７に二次研磨布又は仕上げ研磨布を貼り、圧力Ｐ１（内圧）、圧力Ｐ２（外圧）で荷重を加えて、研磨ヘッド１と定盤７を回転させて全面研磨する（図１２のＳＣ４、図１３の（Ｌ））。 For the locally polished wafer, a secondary polishing cloth or a finishing polishing cloth is attached to the surface plate 7, and a load is applied with pressure P1 (internal pressure) and pressure P2 (external pressure), and the polishing head 1 and the surface plate 7 are rotated to bring the entire surface to the surface. Polishing is performed (SC4 in FIG. 12, (L) in FIG. 13).
　研磨ヘッド１は、ウェーハ保持位置を動作させるための圧力Ｐ１とテンプレートのガイド部３を動作させるための圧力Ｐ２とを組み合わせて研磨加工を行っている。ウェーハＷをテンプレート５のバックパッド２に保持する時は、バックパッド表面に純水を含ませ、純水の表面張力によるウェーハ吸着と、圧力Ｐ１を負圧にし、バックパッド２の変形によるウェーハ吸着との両方で行っている。 The polishing head 1 performs polishing by combining a pressure P1 for operating the wafer holding position and a pressure P2 for operating the guide portion 3 of the template. When the wafer W is held on the back pad 2 of the template 5, pure water is included in the back pad surface, the wafer is attracted by the surface tension of the pure water, and the pressure P 1 is negative, and the wafer is attracted by the deformation of the back pad 2. And both.
　ウェーハＷの全面研磨後、研磨ヘッド１が上昇し、研磨加工ステージ１９から離れる（図１３の（Ｍ））。図１３の（Ｊ）から（Ｍ）の工程は、図１３の（Ｎ）から（Ｕ）の工程のように、複数回繰り返すことができる。 After the entire surface of the wafer W is polished, the polishing head 1 moves up and moves away from the polishing stage 19 ((M) in FIG. 13). Steps (J) to (M) in FIG. 13 can be repeated a plurality of times as in steps (N) to (U) in FIG.
　また、このとき、局所研磨するウェーハを両面研磨加工したウェーハとすることで、ＣＭＰ加工前にＤＳＰのウェーハ外周形状をＣＭＰ装置で部分的に修正することができる。 Further, at this time, by making the wafer to be locally polished into a double-side polished wafer, the outer peripheral shape of the DSP wafer can be partially corrected by a CMP apparatus before CMP processing.
　図１０は本発明の研磨装置を用いた研磨フローの例を示す図、及び、図１１は、従来の本発明の研磨装置を用いた研磨フローの例を示す図である。図１１に示される従来の研磨装置を用いた研磨フローの例では、ＤＳＰＳ１’を行った後に、二次研磨Ｓ３’、Ｓ４’を行っているが、本発明の研磨方法では、図１０のように、ＤＳＰＳ１を行った後に、ＣＭＰの前に、ウェーハ外周部の局所研磨Ｓ２を行い、研磨加工ステージ１９に搬送されて、二次研磨Ｓ３、Ｓ４を行い、最後に、仕上げ研磨Ｓ５を行うことができる。 FIG. 10 is a diagram showing an example of a polishing flow using the polishing apparatus of the present invention, and FIG. 11 is a diagram showing an example of a polishing flow using the conventional polishing apparatus of the present invention. In the example of the polishing flow using the conventional polishing apparatus shown in FIG. 11, the secondary polishing S3 ′ and S4 ′ are performed after performing DSPS 1 ′. In the polishing method of the present invention, as shown in FIG. In addition, after performing DSPS1 and before CMP, local polishing S2 of the outer periphery of the wafer is performed, transferred to the polishing stage 19, and subjected to secondary polishing S3 and S4, and finally, final polishing S5 is performed. Can do.
　アンローディングステージ１７のトレイがロード／アンロードポジションへ移動した後（図１３の（Ｖ））、全面研磨加工されたウェーハＷは、アンローディングステージ１７に搬送され、研磨ヘッド１が降下し（図１３の（Ｗ））、ウェーハＷが純水噴射により研磨ヘッド１から剥離されて（図１３の（Ｘ））、次工程（後工程の洗浄）に送られる（図１３の（Ｙ））。 After the tray of the unloading stage 17 has moved to the load / unload position ((V) in FIG. 13), the wafer W subjected to the entire surface polishing is transferred to the unloading stage 17 and the polishing head 1 is lowered (see FIG. 13 (W)), the wafer W is peeled off from the polishing head 1 by pure water jet ((X) in FIG. 13) and sent to the next process (cleaning in the subsequent process) ((Y) in FIG. 13).
　このようにして、ウェーハが製造される。このような本発明のウェーハの製造方法であれば、高平坦なウェーハを製造することができる。 In this way, a wafer is manufactured. With such a wafer manufacturing method of the present invention, a highly flat wafer can be manufactured.
　以下、実施例及び比較例を挙げて本発明を具体的に説明するが、本発明はこれらに制限されるものではない。 Hereinafter, the present invention will be specifically described with reference to Examples and Comparative Examples, but the present invention is not limited thereto.
　（実施例１－５）
　局所研磨パッドの直径を１３８ｍｍ（実施例１）、９８ｍｍ（実施例２）、５０．８ｍｍ（実施例３）、３８ｍｍ（実施例４）、１８ｍｍ（実施例５）の５水準で、両面研磨（ＤＳＰ）加工後のウェーハを局所研磨加工した後、ウェーハ全面の片面研磨（ＣＭＰ）（二次研磨及び仕上げ研磨）を行い、エッジ部のフラットネス評価指標の一つであるＥＳＦＱＲ（ｍａｘ）の局所研磨加工前後での差を比較した。
　また、局所研磨加工は、ウェーハの外周と局所研磨パッドの中心位置を接触させて行った。 (Example 1-5)
Double-side polishing with 5 levels of local polishing pad diameter of 138 mm (Example 1), 98 mm (Example 2), 50.8 mm (Example 3), 38 mm (Example 4), 18 mm (Example 5) ( DSP) After the processed wafer is locally polished, single-side polishing (CMP) (secondary polishing and finish polishing) is performed on the entire surface of the wafer, and the locality of ESFQR (max), which is one of the flatness evaluation indexes of the edge portion, is processed. The difference before and after polishing was compared.
The local polishing process was performed by bringing the outer periphery of the wafer into contact with the center position of the local polishing pad.
　局所研磨の加工条件は下記の通りである。
　［研磨加工条件］
　装置：不二越機械製片面研磨機
　加工ウェーハ：　直径３００ｍｍ　Ｐ－品＜１００＞シリコンウェーハ
　研磨布：　研磨クロス　　不織布
　研磨剤：　研磨スラリー　　ＫＯＨベースコロイダルシリカ The processing conditions for local polishing are as follows.
[Polishing conditions]
Equipment: Single-side polishing machine made by Fujikoshi Machined wafer: 300mm diameter P - product <100> Silicon wafer Polishing cloth: Polishing cloth Non-woven cloth Abrasive: Polishing slurry KOH-based colloidal silica
　全面研磨の加工条件は下記の通りである。
　［研磨加工条件］
　装置：不二越機械製片面研磨機
　加工ウェーハ：　直径３００ｍｍ　Ｐ－品＜１００＞シリコンウェーハ
　研磨布：　研磨クロス　　不織布（二次研磨）及びスエード（仕上げ研磨）の２種類
　研磨剤：　研磨スラリー　　ＫＯＨベースコロイダルシリカ及びＮＨ４ＯＨベースコロイダルシリカ The processing conditions for the overall polishing are as follows.
[Polishing conditions]
Equipment: Fujikoshi Machine single-side polishing machine Processed wafer: Diameter 300mm P - Product <100> Silicon wafer Polishing cloth: Polishing cloth Non-woven fabric (secondary polishing) and Suede (finish polishing) Abrasive: Polishing slurry KOH-based colloidal silica And NH 4 OH-based colloidal silica
　ウェーハの平坦度測定はＫＬＡ－Ｔｅｎｃｏｒ社製フラットネス測定機　ＷａｆｅｒＳｉｇｈｔ２を用いた。外周除外範囲（Ｅ．Ｅ．）は１ｍｍで行った。測定したウェーハの平坦度からΔＥＳＦＱＲ（ｍａｘ）を算出した。 The flatness of the wafer was measured using a flatness measuring machine WaferSight 2 manufactured by KLA-Tencor. The outer periphery exclusion range (EE) was 1 mm. ΔESFQR (max) was calculated from the measured flatness of the wafer.
　表１に各実施例における局所研磨パッドのサイズ（直径）とウェーハ上の局所研磨パッド接触範囲（ウェーハ上のパッド接触範囲）の関係を示す。 Table 1 shows the relationship between the size (diameter) of the local polishing pad and the local polishing pad contact area on the wafer (pad contact area on the wafer) in each example.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
　図１５に実施例１－５のΔＥＳＦＱＲ（ｍａｘ）の結果を示す。実施例１－５において、ΔＥＳＦＱＲ（ｍａｘ）は負値又は小さい正値を示した。実施例１－４においては、局所研磨によりウェーハ全面研磨後のＥＳＦＱＲ（ｍａｘ）の値を小さくし、ウェーハの平坦度を向上させることができた。また、実施例５においては、ΔＥＳＦＱＲ（ｍａｘ）を小さく抑えることができ、両面研磨加工と片面研磨加工での形状マッチングが行われないことによるフラットネス悪化を小さく抑えることができた。 FIG. 15 shows the result of ΔESFQR (max) in Example 1-5. In Example 1-5, ΔESFQR (max) showed a negative value or a small positive value. In Example 1-4, the value of ESFQR (max) after polishing the entire wafer surface was reduced by local polishing, and the flatness of the wafer could be improved. Further, in Example 5, ΔESFQR (max) can be suppressed to be small, and deterioration of flatness due to the fact that shape matching is not performed in the double-side polishing process and the single-side polishing process can be suppressed to a low level.
　局所研磨パッドのサイズ（直径）が９８ｍｍより小さくなると外周跳ね修正効果が大きくなり、また、１８ｍｍ以上になると修正効果がより適切になることから、局所部の修正範囲はウェーハの外周端から１００ｍｍの範囲が好ましい。 When the size (diameter) of the local polishing pad is smaller than 98 mm, the peripheral jump correction effect is increased. When the local polishing pad size is 18 mm or more, the correction effect is more appropriate. Therefore, the correction range of the local portion is 100 mm from the outer peripheral edge of the wafer. A range is preferred.
　（比較例１、実施例６）
　次に、従来方式同様、局所研磨を行わない状態でＣＭＰ加工まで行う（比較例１）場合のＥＳＦＱＲ（ｍａｘ）と本発明の直径５０．８ｍｍの局所研磨パッドによる局所研磨を行った状態でＣＭＰ加工まで行う（実施例６）場合のウェーハ形状プロファイルを比較した。 (Comparative Example 1, Example 6)
Next, as in the conventional method, CMP is performed in a state where the local polishing is performed by the ESFQR (max) in the case where the CMP process is performed without performing the local polishing (Comparative Example 1) and the local polishing pad having a diameter of 50.8 mm of the present invention. The wafer shape profiles in the case of processing up to processing (Example 6) were compared.
　実施例６において、局所研磨及び全面研磨は実施例１－５と同様の条件で行った。また、比較例１において、全面研磨は実施例１－５と同様の条件で行った。 In Example 6, local polishing and entire surface polishing were performed under the same conditions as in Example 1-5. In Comparative Example 1, the whole surface polishing was performed under the same conditions as in Example 1-5.
　また、ウェーハの平坦度測定はＫＬＡ－Ｔｅｎｃｏｒ社製フラットネス測定機　ＷａｆｅｒＳｉｇｈｔ２を用いた。外周除外範囲（Ｅ．Ｅ．）は１ｍｍで行った。 Further, the flatness of the wafer was measured using a flatness measuring machine WaferSight 2 manufactured by KLA-Tencor. The outer periphery exclusion range (EE) was 1 mm.
　図１６に実施例６のＤＳＰ加工後のウェーハ形状プロファイル、局所研磨加工後のウェーハ形状プロファイル、ＣＭＰ加工後のウェーハ形状プロファイル、局所研磨加工による研磨取り代プロファイル、及び、ＣＭＰ加工による研磨取り代プロファイルを示す。 FIG. 16 shows a wafer shape profile after DSP processing, a wafer shape profile after local polishing processing, a wafer shape profile after CMP processing, a polishing allowance profile by local polishing processing, and a polishing allowance profile by CMP processing in Example 6. Indicates.
　図１７に比較例１のＤＳＰ加工後のウェーハ形状プロファイル、ＣＭＰ加工後のウェーハ形状プロファイル、及び、ＣＭＰ加工による研磨取り代プロファイルを示す。 FIG. 17 shows a wafer shape profile after DSP processing, a wafer shape profile after CMP processing, and a polishing allowance profile by CMP processing of Comparative Example 1.
　局所研磨がある場合（実施例６）と無い場合（比較例１）とで各加工工程にウェーハ形状の変化を比較すると、局所研磨によりＣＭＰ加工前の原料で発生しているはねが解消されてＣＭＰ加工後の形状を局所研磨加工により平坦化することができたことが分かった。 When the change in the wafer shape is compared in each processing step with and without local polishing (Example 6) and with (Comparative Example 1), the splash generated in the raw material before CMP processing is eliminated by local polishing. Thus, it was found that the shape after CMP processing could be planarized by local polishing.
　（比較例２、実施例７）
　さらに、従来方式同様、局所研磨を行わない状態でＣＭＰ加工まで行った（比較例２）時のＥＳＦＱＲ（ｍａｘ）と本発明の直径５０．８ｍｍの局所研磨パッドによる局所研磨を行った状態でＣＭＰ加工まで行った（実施例７）時のＥＳＦＱＲ（ｍａｘ）を比較した。 (Comparative Example 2, Example 7)
Further, as in the conventional method, the CMP is performed without performing local polishing (Comparative Example 2), and the CMP is performed in the state where local polishing is performed with the ESFQR (max) when the local polishing pad of the present invention is 50.8 mm in diameter. The ESFQR (max) when processing was carried out (Example 7) was compared.
　ウェーハの平坦度測定はＫＬＡ－Ｔｅｎｃｏｒ社製フラットネス測定機　ＷａｆｅｒＳｉｇｈｔ２を用いた。外周除外範囲（Ｅ．Ｅ．）は１ｍｍで行った。 The flatness of the wafer was measured using a flatness measuring machine WaferSight 2 manufactured by KLA-Tencor. The outer periphery exclusion range (EE) was 1 mm.
　図１８は、従来方式同様、局所研磨を行わない状態でＣＭＰ加工まで行った（比較例２）時のＥＳＦＱＲ（ｍａｘ）と本発明の直径５０．８ｍｍの局所研磨パッドによる局所研磨を行った状態でＣＭＰ加工まで行った（実施例７）時のＥＳＦＱＲ（ｍａｘ）を比較した図である。 FIG. 18 shows a state where ESFQR (max) when performing CMP processing without performing local polishing (Comparative Example 2) and local polishing using a local polishing pad having a diameter of 50.8 mm according to the present invention as in the conventional method. FIG. 6 is a diagram comparing ESFQR (max) when performing CMP processing up to (Example 7).
　図１８に示されるように、従来の研磨方法（比較例２）に比べて、本発明の局所研磨による修正を行った方法（実施例７）の方が、フラットネスは小さい値を示し、良い結果であった。 As shown in FIG. 18, compared to the conventional polishing method (Comparative Example 2), the method (Example 7) in which correction by local polishing according to the present invention was performed showed a smaller flatness and good. It was a result.
　上記のように、本発明の研磨装置及び研磨方法を用い、ＣＭＰ加工前に局所研磨パッドにより局所研磨を行うことで、ウェーハのフラットネスバラツキを改善することができた。 As described above, by using the polishing apparatus and polishing method of the present invention and performing local polishing with a local polishing pad before CMP processing, the flatness variation of the wafer could be improved.
　なお、本発明は、上記実施形態に限定されるものではない。上記実施形態は例示であり、本発明の特許請求の範囲に記載された技術的思想と実質的に同一な構成を有し、同様な作用効果を奏するものは、いかなるものであっても本発明の技術的範囲に包含される。 The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.

Claims (9)

  1. 　ウェーハを保持するための研磨ヘッドと、
    　前記ウェーハを研磨するための研磨布が貼り付けられた定盤と、
    　前記ウェーハを前記研磨ヘッドへ装着するためのローディングステージと、
    　前記ウェーハを前記研磨ヘッドから剥離するためのアンローディングステージとを具備し、前記研磨ヘッドで保持した前記ウェーハを研磨する研磨装置において、
    　さらに、上下動することができる前記ウェーハより小さい局所研磨パッドを具備し、
    　該局所研磨パッドを前記研磨ヘッドに向けて相対的に上昇させることで、前記研磨ヘッドで保持した前記ウェーハと前記局所研磨パッドとを接触させながら、前記ウェーハを保持した前記研磨ヘッドを回転させることで前記ウェーハ外周部を同心円状に局所研磨可能なものであることを特徴とする研磨装置。     A polishing head for holding the wafer;
    A surface plate to which a polishing cloth for polishing the wafer is attached;
    A loading stage for mounting the wafer to the polishing head;
    An unloading stage for separating the wafer from the polishing head, and a polishing apparatus for polishing the wafer held by the polishing head;
    Furthermore, it comprises a local polishing pad smaller than the wafer that can move up and down,
    By rotating the local polishing pad relatively toward the polishing head, the polishing head holding the wafer is rotated while contacting the wafer held by the polishing head and the local polishing pad. In the polishing apparatus, the outer peripheral portion of the wafer can be locally polished concentrically.
  2. 　前記局所研磨パッドは、前記ウェーハの外周と前記局所研磨パッドの中心位置で接触し、研磨するものであることを特徴とする請求項１に記載の研磨装置。 2. The polishing apparatus according to claim 1, wherein the local polishing pad is in contact with the outer periphery of the wafer at the center position of the local polishing pad to perform polishing.
  3. 　前記研磨装置は、前記研磨ヘッドを洗浄するための、上下動することができるバックパッド洗浄ステージを具備し、前記局所研磨パッドが前記バックパッド洗浄ステージに配設されたものであり、前記バックパッド洗浄ステージと前記局所研磨パッドとを別々に上下動させることができるものであることを特徴とする請求項１又は請求項２に記載の研磨装置。 The polishing apparatus includes a back pad cleaning stage that can move up and down to clean the polishing head, and the local polishing pad is disposed on the back pad cleaning stage. The polishing apparatus according to claim 1, wherein the cleaning stage and the local polishing pad can be moved up and down separately.
  4. 　請求項１から請求項３のいずれか一項に記載の研磨装置を用いたウェーハの研磨方法であって、
    　前記ウェーハ全面の片面研磨より前に、
    　前記局所研磨パッドを前記研磨ヘッドに向けて相対的に上昇させることで、前記研磨ヘッドで保持した前記ウェーハと前記局所研磨パッドとを接触させながら、前記ウェーハを保持した前記研磨ヘッドを回転させることで前記ウェーハ外周部を同心円状に局所研磨することを特徴とするウェーハの研磨方法。     A method for polishing a wafer using the polishing apparatus according to any one of claims 1 to 3,
    Before single-side polishing of the entire wafer surface,
    By rotating the local polishing pad relatively toward the polishing head, the polishing head holding the wafer is rotated while contacting the wafer held by the polishing head and the local polishing pad. A method for polishing a wafer, comprising: locally polishing the outer peripheral portion of the wafer concentrically.
  5. 　前記局所研磨パッドが、前記ウェーハの外周と前記局所研磨パッドの中心位置で接触することを特徴とする請求項４に記載のウェーハの研磨方法。 The method for polishing a wafer according to claim 4, wherein the local polishing pad is in contact with an outer periphery of the wafer at a center position of the local polishing pad.
  6. 　前記ウェーハを、前記ウェーハ外周端から半径方向に２０～５０ｍｍの範囲内だけ研磨することを特徴とする請求項４又は請求項５に記載のウェーハの研磨方法。 6. The wafer polishing method according to claim 4, wherein the wafer is polished only within a range of 20 to 50 mm in a radial direction from the outer peripheral edge of the wafer.
  7. 　前記ウェーハ外周部を同心円状に局所研磨するときに、前記ウェーハを保持した前記研磨ヘッドの前記局所研磨パッドに対する相対的な高さ位置を変えることで研磨荷重を制御することを特徴とする請求項４から請求項６のいずれか一項に記載のウェーハの研磨方法。 The polishing load is controlled by changing a relative height position of the polishing head holding the wafer with respect to the local polishing pad when the wafer outer peripheral portion is locally polished concentrically. The method for polishing a wafer according to any one of claims 4 to 6.
  8. 　局所研磨する前記ウェーハを、両面研磨したウェーハとすることを特徴とする請求項４から請求項７のいずれか一項に記載のウェーハの研磨方法。 The wafer polishing method according to claim 4, wherein the wafer to be locally polished is a double-side polished wafer.
  9. 　請求項４から請求項８のいずれか一項に記載のウェーハの研磨方法により、ウェーハ外周部を局所研磨する工程を含むことを特徴とするウェーハの製造方法。 A method for manufacturing a wafer, comprising a step of locally polishing a peripheral portion of the wafer by the method for polishing a wafer according to any one of claims 4 to 8.
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Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2013055143A (en) * 2011-09-01 2013-03-21 Shin Etsu Handotai Co Ltd Method of polishing silicon wafer and polishing apparatus
JP2014027006A (en) * 2012-07-24 2014-02-06 Disco Abrasive Syst Ltd Processing method of wafer
JP2016197690A (en) * 2015-04-06 2016-11-24 信越半導体株式会社 Polishing device
JP2017185612A (en) * 2016-04-08 2017-10-12 株式会社荏原製作所 Polishing device and polishing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013055143A (en) * 2011-09-01 2013-03-21 Shin Etsu Handotai Co Ltd Method of polishing silicon wafer and polishing apparatus
JP2014027006A (en) * 2012-07-24 2014-02-06 Disco Abrasive Syst Ltd Processing method of wafer
JP2016197690A (en) * 2015-04-06 2016-11-24 信越半導体株式会社 Polishing device
JP2017185612A (en) * 2016-04-08 2017-10-12 株式会社荏原製作所 Polishing device and polishing method

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