WO2019206060A1 - 一种新型高像素影像传感器 - Google Patents
一种新型高像素影像传感器 Download PDFInfo
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- WO2019206060A1 WO2019206060A1 PCT/CN2019/083610 CN2019083610W WO2019206060A1 WO 2019206060 A1 WO2019206060 A1 WO 2019206060A1 CN 2019083610 W CN2019083610 W CN 2019083610W WO 2019206060 A1 WO2019206060 A1 WO 2019206060A1
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- WIPO (PCT)
- Prior art keywords
- image sensor
- substrate
- motor
- novel high
- spacer
- Prior art date
Links
- 229910000679 solder Inorganic materials 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000011521 glass Substances 0.000 claims abstract description 19
- 239000011159 matrix material Substances 0.000 claims abstract description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 6
- 125000006850 spacer group Chemical group 0.000 claims description 22
- 238000002955 isolation Methods 0.000 claims description 14
- 239000003292 glue Substances 0.000 claims description 13
- 239000003990 capacitor Substances 0.000 claims description 12
- 230000000903 blocking effect Effects 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 239000003973 paint Substances 0.000 claims 1
- 238000009826 distribution Methods 0.000 abstract description 11
- 238000011109 contamination Methods 0.000 abstract description 4
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 230000004907 flux Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
Definitions
- the utility model relates to the field of image sensors, in particular to a novel high pixel image sensor.
- the image sensor is an important component of the digital camera. It can be divided into CCD (Charge Coupled DevIC chip e, charge coupled device) and CMOS (Complementary Metal-Oxide SemIC chip onductor, metal oxide semiconductor device).
- CCD Charge Coupled DevIC chip e, charge coupled device
- CMOS Complementary Metal-Oxide SemIC chip onductor, metal oxide semiconductor device.
- BSI Backside illumination
- front-end technology are advancing with the times, and the pixels are miniaturized.
- Technological breakthroughs in advanced processes have driven CMOS image sensors into the high-pixel (8-megapixel-plus) application market.
- CMOS image sensors For high-pixel CMOS image sensors, more pin pins need to be drawn at the bottom of the PLCC (Plastic Leaded Chip Carrier) chip of the CMOS image sensor.
- PLCC Physical Leaded Chip Carrier
- the number of pin pins is very limited and has passed. Many pin pins are not conducive to assembly, so high-pixel CMOS image sensors on the market today cannot achieve higher pixel height due to pin pin limitation.
- capacitor resistance, IC chip and CMOS image of traditional high-pixel CMOS image sensor The sensors are placed together on the substrate.
- the capacitor resistors will have solder balls and flux after the SMT surface mount process.
- the IC chip will also have residues after the COB process, and the solder balls, flux, and residue can easily run to the CMOS.
- cleaning is very difficult or impossible to clean, and the lens and image sensor have poor concentricity. The quality defect has occurred. It needs to rely on the camera focusing machine (AA machine) for slow focus alignment. The assembly speed is very slow. .
- the object of the present invention is to provide a novel high-pixel image sensor that uses a structure in which a solder ball is embedded in a groove to solder a substrate and an FPC soft board, that is, to meet the transmission requirements of high-pixel and large data. It is also stable and convenient to install.
- a novel high-pixel image sensor includes a lens, a motor, a glass filter, an isolation seat, an image sensor, a substrate, and an FPC flexible board.
- the lens is mounted at the center of the motor, and a positioning step is disposed above the isolation seat, and the positioning step is embedded in the motor.
- the cavity is provided with a glass filter in the middle of the isolation seat, and the substrate is placed under the isolation seat.
- a capacitor resistor and a motor drive IC are attached around the substrate, and the isolation cover covers the image sensor, and the side of the image sensor is connected to the substrate through the gold wire.
- a plurality of matrix-distributed solder balls are disposed at the bottom of the substrate, and the FPC soft board is provided with a groove corresponding to the position of the solder ball, and the substrate is soldered into the groove by the solder ball to solder the FPC soft board.
- the matrix of the solder balls is distributed in a rectangular or square shape.
- a spacer wall corresponding to the position of the capacitor resistor and the motor drive IC is disposed under the spacer, and the upper and lower sides of the spacer are respectively adhered and integrated with the motor and the substrate by the coating glue, and are isolated.
- the wall blocking capacitor resistor and the motor driver IC are separated from the image sensor.
- the glass filter is lower than the positioning step, and the bonding seat and the glass filter are provided with a painting tank for preventing the glue from overflowing.
- the spacer is provided with air holes for releasing the inflation gas.
- the image sensor is a CMOS image sensor.
- the novel high-pixel image sensor of the present invention uses a solder ball embedded in a groove to integrally solder the substrate and the FPC soft board, and the image sensor connects the substrate through the gold wire to the FPC soft board.
- the isolation base can isolate the image sensor from the capacitor resistance and motor drive IC, effectively putting the tin beads, Flux, debris, residue and other dirt are isolated outside the photosensitive area of the image sensor, which will not pollute the photosensitive area and avoid contamination during secondary placement.
- Figure 1 is a perspective view of the utility model
- Figure 2 is an exploded view of the utility model
- Figure 3 is a plan view of the present invention.
- Figure 4 is a cross-sectional view taken along line A-A of Figure 3;
- FIG. 5 is a perspective view of the glass filter, the spacer, the image sensor, and the substrate assembled in the present invention
- FIG. 6 is a perspective view of another perspective view of the glass filter, the spacer, the image sensor, and the substrate assembled integrally according to the present invention
- FIG. 7 is a schematic view of a first embodiment of a solder ball matrix distribution according to the present invention.
- FIG. 8 is a schematic view of a second embodiment of a solder ball matrix distribution according to the present invention.
- FIG. 9 is a schematic view of a third embodiment of a solder ball matrix distribution according to the present invention.
- Figure 10 is a perspective view of the spacer of the present invention.
- FIG. 11 is a schematic view of a barrier blocking resistor and a motor driving IC of the present invention.
- Figure 12 is a perspective view of the spacer of the present invention from another perspective.
- a novel high-pixel image sensor includes a lens 1, a motor 2, a glass filter 3, an isolation seat 4, an image sensor 5, a substrate 6, and an FPC flexible board 7, and the lens 1 is mounted on a motor.
- a positioning step 41 is arranged above the spacer 4, the positioning step 41 is embedded in the inner cavity of the motor 2, and the motor 4 is assembled quickly by the spacer 4, and the glass filter 3 is attached to the middle of the spacer 4, and the spacer 4 is attached below.
- the substrate 6 is mounted with a capacitor resistor 61 and a motor driver IC 62 attached to the substrate 6.
- the spacer 4 covers the image sensor 5.
- the side of the image sensor 5 is connected to the substrate 6 via a gold wire 8.
- the bottom of the substrate 6 is provided with a plurality of matrix distributions.
- the solder ball 63, the FPC flexible board 7 is provided with a recess 71 corresponding to the position of the solder ball 63.
- the substrate 6 is embedded in the recess 71 by the solder ball 63 to solder the FPC flexible board 7, the solder ball 63.
- the number of solder balls 63 satisfies the requirements for large data transmission and ensures that the substrate 6 is firmly connected to the FPC flexible board 7.
- the matrix distribution pattern of the solder balls 63 is rectangular or square.
- the number of solder balls 63 is determined according to the use specifications, and the matrix distribution can be extracted to meet the requirements of large data and high pixels, so that the solder balls 63 can be quickly matched.
- the position of the quasi-groove 71 increases the assembly speed.
- the solder ball matrix distribution shown in FIG. 7 there are 44 solder balls 63
- the solder ball matrix distribution embodiment 2 shown in FIG. 8 has 130 solder balls 63.
- the solder ball matrix distribution shown in FIG. 9 is implemented in the third embodiment, and there are 68 solder balls 63.
- a spacer wall 42 corresponding to the position of the capacitor resistor 61 and the motor driver IC 62 is disposed under the spacer 4, and the upper and lower sides of the spacer 42 are respectively adhered and integrated with the motor 2 and the substrate 6 by applying glue.
- the partition wall 42 blocks the capacitor resistor 61, and the motor driver IC 62 is separated from the image sensor 5, which can effectively isolate the solder balls, flux, debris, residue and the like from the photosensitive area of the image sensor 5, and does not cause damage to the photosensitive area. Contamination, to avoid contamination when secondary patching operations.
- the glass filter 3 is lower than the positioning step 41, and the spacer 4 and the glass filter 3 are provided with a glue groove 43 for preventing the glue from overflowing.
- the substrate is firstly disposed. 6.
- the image sensor 5, the isolation seat 4, and the glass filter 3 are assembled into a PLCC chip, and then the assembled PLCC chip is quickly aligned with the inner cavity of the motor 2 through the positioning step 41, and then glued and integrated by glue.
- the isolation seat 4 The air hole 44 is provided for releasing the inflation gas, and the air hole 44 helps release the expanded gas during the product SMT, prevents the product from being deformed by the internal pressure, and affects the normal forming of the product.
- the image sensor 5 is a CMOS image sensor, and the glass filter 3 It is an IR filter.
- the solder ball 63 is embedded in the recess 71 to integrally solder the substrate 6 and the FPC flexible board 7, and the image sensor 5 is connected to the substrate 6 through the gold wire 8, and the substrate 6 accurately transmits data to the FPC flexible board 7, and the matrix of the solder balls 63 is distributed. High pixel requirements for high pixel requirements, better performance;
- the positioning step 41 is embedded in the inner cavity of the motor 2 to ensure that the substrate 6 and the motor 2 are quickly assembled and integrated, and the installation is very convenient, thereby ensuring the concentricity of the lens 1 and the image sensor 5, solving the tilt problem of the optical axis, and facilitating image formation;
- the glue and the partition wall 42 isolate the image sensor 5 from the capacitor resistor 61 and the motor driver IC 62, and effectively isolate the solder balls, flux, debris and the like from the photosensitive area of the CMOS image sensor, without the photosensitive region. create pollution;
- the drawing glue groove 43 helps to prevent the glue from overflowing when the glue is applied to the glass filter 3, and effectively prevents the sensor from being scrapped due to the glue overflowing to the sensor surface.
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
一种新型高像素影像传感器,包括镜头(1)、马达(2)、玻璃滤光片(3)、隔离座(4)、影像传感器(5)、基板(6)和FPC软板(7),镜头(1)安装在马达(2)中心处,隔离座(4)上方设有定位台阶(41),定位台阶(41)嵌入马达(2)内腔,隔离座(4)中部贴装有玻璃滤光片(3),隔离座(4)下方贴装基板(6),基板(6)四周贴装有电容电阻(61)和马达驱动IC(62),基板(6)底部设有多个矩阵分布的焊球(63),FPC软板(7)设有与焊球(63)位置相对应的凹槽(71),利用焊球(63)嵌入凹槽(71)中把基板(6)和FPC软板(7)焊接一体,影像传感器(5)通过金线(8)连接基板(6),基板(6)向FPC软板(7)精确传输数据,焊球(63)矩阵分布有多个,满足高像素需求,高像素影像传感器能够获得更好的性能,隔离底座(4)能够把影像传感器(5)和电容电阻(61)、马达驱动IC(62)相隔离开,避免二次贴片作业时受污染。
Description
本实用新型涉及影像传感器领域,具体涉及一种新型高像素影像传感器。
影像传感器,是组成数字摄像头的重要组成部分,根据元件的不同,可分为CCD(Charge Coupled DevIC芯片e,电荷耦合元件)和CMOS(Complementary Metal-Oxide SemIC芯片onductor,金属氧化物半导体元件)两大类,其中CMOS影像传感器的应用集中在500万像素以下,随着智能手机、平板电脑的应用,背照式(BSI:Backside illumination)与前置式技术的与时俱进,像素微小化以及先进制程的技术突破,带动了CMOS影像传感器大举进军高像素(800万像素以上)应用市场。
对于高像素CMOS影像传感器,由于传输数据多需要在CMOS影像传感器的PLCC(Plastic Leaded Chip Carrier)芯片底部引出更多的pin脚,但因为现有PLCC结构设计限制,pin脚引出数量非常有限而且过多的pin脚不利于组装,所以现在市场上的高像素CMOS影像传感器因为pin脚限制并不能做到更高的高像素,另外,传统高像素CMOS影像传感器的电容电阻、IC芯片芯片与CMOS影像传感器是一起摆放在基板,电容电阻在SMT表面贴装工艺后会有锡珠、助焊剂,IC芯片芯片在COB工艺后也会有残渣,而锡珠、助焊剂、残渣很容易跑到CMOS影像传感器上面,清洁非常困难或无法清洁,而且镜头与影像传感器同心度不佳,已发生对不准品质缺陷,需要依靠摄像头调焦机(AA机)进行缓慢调焦对准,组装速度非常慢。
针对现有技术存在的问题,本实用新型的目的在于提供了一种新型高像素影像传感器,采用焊球嵌入凹槽中的结构来焊接基板和FPC软板,即满足高像素大数据的传输要求又安装稳固方便。
一种新型高像素影像传感器,包括镜头、马达、玻璃滤光片、隔离座、影像传感器、基板和FPC软板,镜头安装在马达中心处,隔离座上方设有定位台阶,定位台阶嵌入马达内腔,隔离座中部贴装有玻璃滤光片,隔离座下方贴装基板,基板四周贴装有电容电阻和马达驱动IC,隔离座盖合影像传感器,影像传感器边侧通过金线连接基板,所述基板底部设有多个矩阵分布的焊球,FPC软板设有与焊球位置相对应的凹槽,基板通过焊球嵌入凹槽中焊接FPC软板。
作为本实用新型的一种优选方案,所述焊球的矩阵分布方式为长方形或正方形。
作为本实用新型的一种优选方案,所述隔离座下方设有与电容电阻、马达驱动IC位置相对应的隔离墙,隔离座上下方通过涂覆胶水分别与马达、基板黏贴连接一体,隔离墙阻挡电容电阻、马达驱动IC与影像传感器隔离分开。
作为本实用新型的一种优选方案,所述玻璃滤光片低于定位台阶,隔离座与玻璃滤光片贴合处设有防止胶水外溢的画胶槽。
作为本实用新型的一种优选方案,所述隔离座设有用于释放膨胀气体的气孔。
作为本实用新型的一种优选方案,所述影像传感器为CMOS影像传感器。
相对于现有市场上的高像素影像传感器,本实用新型的新型高像素影像传感器利用焊球嵌入凹槽中把基板和FPC软板焊接一体,影像传感器通过金线连接基板,基板向FPC软板精确传输数据,焊球矩阵分布有多个满足高像素需求,高像素影像传感器能够获得更好的性能,另外,隔离底座能够把影像传感器和电容电阻、马达驱动IC相隔离开,有效把锡珠、助焊剂、碎屑、残渣等脏污隔离在影像传感器感光区外面,不会对感光区造成污染,避免二次贴片作业时受污染。
图1是本实用新型的立体图;
图2是本实用新型的分解图;
图3是本实用新型的俯视图;
图4是图3的A-A方向的剖视图;
图5是本实用新型的玻璃滤光片、隔离座、影像传感器、基板组装一体时的立体图;
图6是本实用新型的玻璃滤光片、隔离座、影像传感器、基板组装一体时另一视角的立体图;
图7是本实用新型的焊球矩阵分布实施方式一的示意图;
图8是本实用新型的焊球矩阵分布实施方式二的示意图;
图9是本实用新型的焊球矩阵分布实施方式三的示意图;
图10是本实用新型的隔离座的立体图;
图11是本实用新型的隔离墙阻挡电容电阻、马达驱动IC的示意图;
图12是本实用新型的隔离座另一视角的立体图。
如图1~6所示,一种新型高像素影像传感器,包括镜头1、马达2、玻璃滤光片3、隔离座4、影像传感器5、基板6和FPC软板7,镜头1安装在马达中心处2,隔离座4上方设有定位台阶41,定位台阶41嵌入马达2内腔,实现隔离座4快速组装马达2,隔离座4中部贴装有玻璃滤光片3,隔离座4下方贴装基板6,基板6四周贴装有电容电阻61和马达驱动IC62,隔离座4盖合影像传感器5,影像传感器5边侧通过金线8连接基板6,基板6底部设有多个矩阵分布的焊球63,FPC软板7设有与焊球63位置相对应的凹槽71,使用BGA焊球阵列封装技术,基板6通过焊球63嵌入凹槽71中焊接FPC软板7,焊球63为半球形,焊球63数量多满足大数据传输要求而且保证基板6稳固连接FPC软板7。
如图7~9所示,焊球63的矩阵分布方式为长方形或正方形,焊球63的数量根据使用规格确定,矩阵分布可引出多个,满足大数据高像素要求,方便焊球63快速对准凹槽71的位置,提高组装速度,图7所示焊球矩阵分布实施方式一,焊球63共有44个,图8所示焊球矩阵分布实施方式二,焊球63共有130个,图9所示焊球矩阵分布实施方式三,焊球63共有68个。
如图10和11所示,隔离座4下方设有与电容电阻61、马达驱动IC62位置相对应的隔离墙42,隔离座42上下方通过涂覆胶水分别与马达2、基板6黏贴连接一体,隔离墙42阻挡电容电阻61、马达驱动IC62与影像传感器5隔离分开,可有效把锡珠、助焊剂、碎屑、残渣等脏污隔离在影像传感器5感光区外面,不会对感光区造成污染,避免二次贴片作业时,受污染。
如图12所示,玻璃滤光片3低于定位台阶41,隔离座4与玻璃滤光片3贴合处设有防止胶水外溢的画胶槽43,组装高像素影像传感器时,先把基板6、影像传感器5、隔离座4、玻璃滤光片3组装成PLCC芯片,再把装好的PLCC芯片通过定位台阶41快速对准马达2内腔定位后通过胶水粘贴一体,另外,隔离座4设有用于释放膨胀气体的气孔44,气孔44有助于在产品SMT时释放膨胀的气体,避免产品受内压变形,影响产品的正常成形,影像传感器5为CMOS影像传感器,玻璃滤光片3为IR滤光片。
的优点在于:
1.焊球63嵌入凹槽71中把基板6和FPC软板7焊接一体,影像传感器5通过金线8连接基板6,基板6向FPC软板7精确传输数据,焊球63矩阵分布有多个满足高像素需求,高像素影像传感器能够获得更好的性能;
2.定位台阶41嵌入马达2内腔,保证基板6和马达2快速组装一体,安装非常方便,从而保证镜头1与影像传感器5的同心度,解决光轴倾斜问题,利于影像成形;
3.胶水和隔离墙42把影像传感器5和电容电阻61、马达驱动IC62相隔离开,可有效把锡珠、助焊剂、碎屑等脏污隔离在CMOS影像传感器感光区外面,不会对感光区造成污染;
4.画胶槽43有助于在贴装玻璃滤光片3画胶时避免胶水外溢,有效防止因胶水外溢到传感器表面造成传感器报废。
以上内容是结合具体的优选实施方式对本实用新型所作的进一步详细说明,不能认定本实用新型的具体实施只局限于这些说明,对于本实用新型所属技术领域的普通技术人员来说,在不脱离本实用新型构思的前提下,还可以做出若干简单推演或替换,都应当视为属于本实用新型的保护范围。
Claims (6)
- 一种新型高像素影像传感器,包括镜头、马达、玻璃滤光片、隔离座、影像传感器、基板和FPC软板,镜头安装在马达中心处,隔离座上方设有定位台阶,定位台阶嵌入马达内腔,隔离座中部贴装有玻璃滤光片,隔离座下方贴装基板,基板四周贴装有电容电阻和马达驱动IC,隔离座盖合影像传感器,影像传感器边侧通过金线连接基板,其特征在于:所述基板底部设有多个矩阵分布的焊球,FPC软板设有与焊球位置相对应的凹槽,基板通过焊球嵌入凹槽中焊接FPC软板。
- 根据权利要求1所述的一种新型高像素影像传感器,其特征在于:所述焊球的矩阵分布方式为长方形或正方形。
- 根据权利要求1所述的一种新型高像素影像传感器,其特征在于:所述隔离座下方设有与电容电阻、马达驱动IC位置相对应的隔离墙,隔离座上下方通过涂覆胶水分别与马达、基板黏贴连接一体,隔离墙阻挡电容电阻、马达驱动IC与影像传感器隔离分开。
- 根据权利要求1所述的一种新型高像素影像传感器,其特征在于:所述玻璃滤光片低于定位台阶,隔离座与玻璃滤光片贴合处设有防止胶水外溢的画胶槽。
- 根据权利要求1所述的一种新型高像素影像传感器,其特征在于:所述隔离座设有用于释放膨胀气体的气孔。
- 根据权利要求1~5任一所述的一种新型高像素影像传感器,其特征在于:所述影像传感器为CMOS影像传感器。
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