WO2019186720A1 - Procédé de fabrication de dispositif d'affichage, et dispositif d'affichage - Google Patents

Procédé de fabrication de dispositif d'affichage, et dispositif d'affichage Download PDF

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Publication number
WO2019186720A1
WO2019186720A1 PCT/JP2018/012559 JP2018012559W WO2019186720A1 WO 2019186720 A1 WO2019186720 A1 WO 2019186720A1 JP 2018012559 W JP2018012559 W JP 2018012559W WO 2019186720 A1 WO2019186720 A1 WO 2019186720A1
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Prior art keywords
display device
metal pattern
layer
manufacturing
sheet
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PCT/JP2018/012559
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English (en)
Japanese (ja)
Inventor
井上　毅
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シャープ株式会社
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Priority to PCT/JP2018/012559 priority Critical patent/WO2019186720A1/fr
Publication of WO2019186720A1 publication Critical patent/WO2019186720A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

Definitions

  • the present invention relates to a display device manufacturing method and a display device.
  • EL displays using electroluminescence (hereinafter referred to as “EL”) of organic materials, inorganic materials, or quantum dots are known.
  • These EL displays use a fine metal mask sheet (FMM sheet) in which a highly accurate opening is provided at an arbitrary position in the light emitting layer forming process, and emits RGB light in each region on the deposition substrate. The material is deposited to form a film.
  • FMM sheet fine metal mask sheet
  • some EL displays have notches for fingerprint sensors and cameras in the display area of the display screen.
  • the corresponding part of the FMM sheet is covered with a howling sheet, a cover sheet, or the like so that film formation is not performed on these notches.
  • Japanese Patent Publication Japanese Patent Laid-Open No. 2010-129345 (published on June 10, 2010)”
  • the FMM sheet, the howling sheet, and the cover sheet are brought into close contact with the film formation substrate using the magnetic force of the magnet.
  • a non-uniform magnetic field acts on the howling sheet or cover sheet at the time of film formation.
  • a moment is generated in the cover sheet and the FMM sheet is partially pushed up.
  • film formation defects such as vapor deposition shadow and misalignment occur.
  • the present invention has been made in view of the above problems, and the object thereof is to stably support an FMM sheet by a howling sheet or a cover sheet, even for a display device having a notch, and to prevent film formation failure. It is an object of the present invention to provide a display device manufacturing method and a display device that can suppress generation.
  • a method for manufacturing a display device is a method for manufacturing a display device having a notch portion in a display area, in which a TFT layer is formed on a deposition target substrate.
  • At least one of the howling sheet and the cover sheet includes a linear portion and a protruding portion protruding from the linear portion so as to correspond to the notch portion, and in the TFT layer forming step, the film formation substrate A first metal pattern is formed at a position overlapping the protruding portion.
  • a display device is a display device having a notch portion in a display area, and includes a TFT layer formed over a deposition target substrate and the TFT layer.
  • a pattern is formed, and the first metal pattern is formed so as to overlap the frame region between the edge of the notch portion and the display area along the notch portion.
  • the first metal pattern is formed on the deposition target substrate to reduce the magnetic field of the protruding portion, and the FMM sheet can be stably supported by the howling sheet or the cover sheet. Occurrence of film defects can be suppressed.
  • FIG. 5 is a schematic diagram of the completed device on which the first metal pattern is formed, and (b) is a schematic diagram showing a corresponding region at the time of vapor deposition of (a) together with a howling sheet and a cover sheet.
  • FIG. 8A is a schematic diagram of a completed device on which a first metal pattern and a second metal pattern are formed
  • FIG. 8B is a schematic diagram showing an aspect during vapor deposition of FIG. It is a schematic diagram which shows the modification of FIG.
  • “same layer” means formed in the same process (film formation step), and “lower layer” means formed in a process prior to the layer to be compared.
  • the “upper layer” means that it is formed in a later process than the layer to be compared.
  • FIG. 1 is a flowchart showing an example of a method for manufacturing the EL display device 2.
  • FIG. 2 is a cross-sectional view showing the configuration of the display area of the EL display device 2.
  • a resin layer 12 is formed on a translucent support substrate (for example, mother glass) (step S1).
  • the barrier layer 3 is formed (step S2).
  • the TFT layer 4 is formed (step S3).
  • a top emission type light emitting element layer 5 is formed (step S4).
  • the sealing layer 6 is formed (step S5).
  • an upper surface film is pasted on the sealing layer 6 (step S6).
  • step S7 the support substrate is peeled off from the resin layer 12 by laser light irradiation or the like.
  • the lower film 10 is attached to the lower surface of the resin layer 12 (step S8).
  • step S9 the laminate including the lower film 10, the resin layer 12, the barrier layer 3, the TFT layer 4, the light emitting element layer 5, and the sealing layer 6 is divided to obtain a plurality of pieces.
  • step S10 an electronic circuit board (for example, an IC chip and an FPC) is mounted on a part (terminal portion) of the outside (non-display area, frame area) of the display area where the plurality of sub-pixels are formed (step S11).
  • steps S1 to S11 are performed by a display device manufacturing apparatus (including a film forming apparatus that performs each step of steps S1 to S5).
  • the material of the resin layer 12 examples include polyimide.
  • the resin layer 12 may be replaced with a two-layer resin film (for example, a polyimide film) and an inorganic insulating film sandwiched between them.
  • the barrier layer 3 is a layer that prevents foreign matters such as water and oxygen from entering the TFT layer 4 and the light emitting element layer 5.
  • a silicon oxide film, a silicon nitride film, or an oxynitride formed by a CVD method is used.
  • a silicon film or a laminated film thereof can be used.
  • the TFT layer 4 includes a semiconductor film 15, an inorganic insulating film 16 (gate insulating film) above the semiconductor film 15, a gate electrode GE and a gate wiring GH above the inorganic insulating film 16, and a gate electrode GE and An inorganic insulating film 18 above the gate wiring GH, a capacitive electrode CE above the inorganic insulating film 18, an inorganic insulating film 20 above the capacitive electrode CE, and a source wiring SH above the inorganic insulating film 20 And a planarizing film 21 (interlayer insulating film) that is an upper layer than the source wiring SH.
  • the layer including the gate electrode GE and the gate wiring GH is referred to as a gate layer
  • the layer including the capacitor electrode CE and the capacitor wiring not shown connected to the capacitor electrode CE is also referred to as a capacitor wiring layer
  • the source wiring SH is The containing layer is also called a source layer.
  • the semiconductor film 15 is made of, for example, low-temperature polysilicon (LTPS) or an oxide semiconductor (for example, an In—Ga—Zn—O-based semiconductor), and a transistor (TFT) is formed so as to include the semiconductor film 15 and the gate electrode GE. Is done.
  • the transistor is shown with a top gate structure, but may have a bottom gate structure.
  • the gate electrode GE, the gate wiring GH, the capacitor electrode CE, the capacitor wiring (not shown), and the source wiring SH are, for example, a metal single layer film containing at least one of aluminum, tungsten, molybdenum, tantalum, chromium, titanium, and copper. Or it is comprised by a laminated film.
  • the TFT layer 4 in FIG. 2 includes one semiconductor layer and three metal layers.
  • the inorganic insulating films 16, 18, and 20 can be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a stacked film thereof formed by a CVD method.
  • the planarizing film 21 can be made of, for example, an applicable organic material such as polyimide or acrylic.
  • the light emitting element layer 5 includes an anode 22 above the planarizing film 21, an insulating anode cover film (edge cover) 23 covering the edge of the anode 22, and an EL (electroluminescence) layer above the anode cover film 23.
  • the layer 24 and the cathode 25 above the EL layer 24 are included.
  • the anode cover film 23 is formed, for example, by applying an organic material such as polyimide or acrylic and then patterning by photolithography.
  • a light emitting element ES for example, OLED: organic light emitting diode, QLED: quantum dot diode
  • a sub-pixel circuit for controlling is formed in the TFT layer 4.
  • the EL layer 24 is configured, for example, by laminating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in order from the lower layer side.
  • the light emitting layer is formed in an island shape in the opening (for each subpixel) of the anode cover film 23 by a vapor deposition method or an ink jet method.
  • the other layers are formed in an island shape or a solid shape (common layer).
  • the structure which does not form one or more layers among a positive hole injection layer, a positive hole transport layer, an electron carrying layer, and an electron injection layer is also possible.
  • the vapor deposition mask When vapor-depositing the light emitting layer of the OLED, a vapor deposition mask is used.
  • the vapor deposition mask includes a sheet-like FMM (fine metal mask) sheet having a large number of openings.
  • the FMM sheet is made of, for example, Invar, and an island-like light emitting layer (corresponding to one subpixel) is formed by an organic material that has passed through one opening.
  • the light emitting layer of the QLED can form an island-shaped light emitting layer (corresponding to one subpixel) by, for example, applying a solvent in which quantum dots are diffused by inkjet.
  • the anode 22 is composed of, for example, a laminate of ITO (IndiumITOTin Oxide) and Ag (silver) or an alloy containing Ag, and has light reflectivity.
  • the cathode (cathode) 25 can be made of a light-transmitting conductive material such as MgAg alloy (ultra-thin film), ITO, or IZO (Indium zinc Oxide).
  • the light-emitting element ES is an OLED
  • holes and electrons are recombined in the light-emitting layer by the driving current between the anode 22 and the cathode 25, and light is emitted in the process in which the excitons generated thereby transition to the ground state.
  • the cathode 25 is light-transmitting and the anode 22 is light-reflective, the light emitted from the EL layer 24 is directed upward and becomes top emission.
  • the light-emitting element ES is a QLED
  • holes and electrons are recombined in the light-emitting layer due to the drive current between the anode 22 and the cathode 25, and the excitons generated thereby are conduction band levels of the quantum dots.
  • Light (fluorescence) is emitted in the process of transition from valence band level to valence band.
  • a light emitting element inorganic light emitting diode or the like
  • OLED organic light emitting diode
  • the sealing layer 6 is translucent, and includes an inorganic sealing film 26 that covers the cathode 25, an organic buffer film 27 that is above the inorganic sealing film 26, and an inorganic sealing film 28 that is above the organic buffer film 27. Including.
  • the sealing layer 6 covering the light emitting element layer 5 prevents penetration of foreign substances such as water and oxygen into the light emitting element layer 5.
  • Each of the inorganic sealing film 26 and the inorganic sealing film 28 is an inorganic insulating film, and is formed of, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a laminated film thereof formed by a CVD method. be able to.
  • the organic buffer film 27 is a light-transmitting organic film having a flattening effect, and can be made of a coatable organic material such as acrylic.
  • the organic buffer film 27 can be formed by, for example, inkjet coating, but a bank BK for stopping the liquid droplets may be provided in the non-display area.
  • the lower film 10 is, for example, a PET film for realizing the EL display device 2 having excellent flexibility by being attached to the lower surface of the resin layer 12 after peeling off the support substrate.
  • the functional film 39 has, for example, at least one of an optical compensation function, a touch sensor function, and a protection function.
  • Embodiment 1 Embodiment 1 of the present invention will be described below with reference to FIGS.
  • FIG. 3 is an exploded perspective view showing a configuration in which the first metal pattern 111 is formed on the deposition target substrate 110 of the vapor deposition apparatus 100 according to the first embodiment.
  • FIG. 4 is a plan view showing the configuration of the vapor deposition mask 125 according to the first embodiment.
  • FIG. 5A is a schematic diagram of the completed device 7 on which the first metal pattern 111 is formed
  • FIG. 5B is a schematic diagram showing a corresponding region at the time of vapor deposition of FIG. 5A together with a howling sheet and a cover sheet. is there.
  • FIG. 6 is a cross-sectional view showing the vicinity of the end face of the notch portion 9 in FIG. 5 (a part of the frame region 7b).
  • the vapor deposition apparatus 100 is an apparatus for forming a vapor deposition film made of a vapor deposition material (not shown) in a film formation area of the deposition target substrate 110.
  • a case where the light emitting element layer 5 of the EL display device 2 is formed as a vapor deposition film will be described as an example.
  • the vapor deposition apparatus 100 includes a vapor deposition mask 125, a magnet plate 121, and a vapor deposition source (not shown), and these are housed in a film formation chamber including a rotation mechanism (not shown), a deposition plate, a shutter, and the like. Has been. Note that, although not illustrated, the film formation chamber is provided with a vacuum pump, an exhaust port, and the like for keeping the inside of the film formation chamber in a vacuum state.
  • the vapor deposition mask 125 is a mask for forming a vapor deposition film made of a vapor deposition material (not shown) in a film formation area of the deposition target substrate 110.
  • the vapor deposition mask 125 is formed of a magnetic material and is in close contact with the film formation area side of the film formation substrate 110.
  • the vapor deposition mask 125 is attracted to the film formation area side of the film formation substrate 110 by the magnetic force of the magnet plate 121 provided on the surface opposite to the film formation area of the film formation substrate 110, and is formed. It is comprised so that it may closely_contact
  • a vapor deposition source (not shown) is a container for accommodating a vapor deposition material, and generates vapor deposition particles in a gaseous state by heating or evaporating or sublimating the vapor deposition material.
  • the vapor deposition source injects the generated gaseous vapor deposition particles toward the deposition area of the deposition target substrate 110.
  • the vapor deposition particles injected toward the film formation area 111 of the film formation substrate 110 pass through the opening region 126a of the vapor deposition mask 125, and a light emitting layer having a shape corresponding to the opening region 126a is formed in the film formation area. .
  • a touch plate 122 including a touch sensor is disposed between the magnet plate 121 and the deposition target substrate 110.
  • the deposition mask 125 includes at least an FMM sheet 126, a howling sheet 127, a cover sheet 131, and a frame 130.
  • the FMM sheet 126 has a plurality of opening regions 126a.
  • the FMM sheet 126 is an elongated sheet, and a plurality of opening regions 126a are arranged in the longitudinal direction.
  • the opening region 126a is formed in the FMM sheet 126 with high positional accuracy by laser processing or the like.
  • the FMM sheet 126 is formed of a magnetic metal having magnetism such as iron, nickel, invar (iron-nickel alloy), SUS430, or the like. Of these magnetic metals, invar, which is an iron-nickel alloy that is hardly deformed by heat, can be preferably used. As described above, since the FMM sheet 126 is formed of a magnetic metal, the FMM sheet 126 is closely attached to the deposition target substrate 110 by the magnetic force of the magnet plate 121.
  • the howling sheet 127 is disposed so as to extend in a direction perpendicular to the longitudinal direction of each FMM sheet 126.
  • the howling sheets 127 extend in the arrangement direction in which a plurality of FMM sheets 126 are arranged in parallel to each other, and a plurality of howling sheets 127 are arranged in the longitudinal direction of the FMM sheets 126.
  • the howling sheets 127 are preferably arranged along the edge of the opening region 126a.
  • the howling sheet 127 has a function of a beam that receives the weight of the elongated FMM sheet 126 and prevents the FMM sheet 126 from being loosened by its own weight.
  • the howling sheet 127 is made of a magnetic metal having magnetism such as iron, nickel, invar (iron-nickel alloy), SUS430, or the like. As described above, the howling sheet 127 is made of a magnetic metal, so that it is attracted to the film formation substrate 110 side by the magnetic force of the magnet plate 121 and presses the FMM sheet 126 against the film formation substrate 110.
  • the cover sheet 131 closes gaps between the FMM sheets 126 arranged in parallel in the short direction.
  • the cover sheet 131 is formed of a magnetic metal having magnetism, and is preferably formed of, for example, iron, nickel, invar (iron-nickel alloy), SUS430, or the like.
  • the cover sheet 131 is attracted to the film formation substrate 110 side by the magnetic force of the magnet plate 121.
  • the frame 130 holds the FMM sheet 126, the howling sheet 127, and the cover sheet 131 arranged in order from the side close to the deposition target substrate 110.
  • the frame 130 is formed of magnetic metal having magnetism, and is preferably formed of, for example, iron, nickel, invar (iron-nickel alloy), SUS430, or the like.
  • the notched portion 9 is formed in the display area (evaporation area) 8 in the completed device 7 of the EL display device 2.
  • the notch portion 9 is deteriorated by moisture or oxygen if a vapor deposition film is present on the cross section where notching is performed. For this reason, it is necessary to seal the end surface of the notch portion 9 with a barrier film or the like. Therefore, in the vapor deposition step, the notch portion 9 needs to cover the vapor deposition material so that the vapor deposition material is not deposited on the notch portion 9.
  • FIG. 1 Display device with notch
  • reference numeral 7a indicates a panel edge that is an outer edge of the panel of the completed device 7
  • reference numeral 7b indicates a frame area (non-display area) provided between the panel edge and the display area.
  • reference numeral 7′a indicates a split edge
  • reference numeral 7′b indicates a frame corresponding zone
  • reference numeral 8 ′ indicates a vapor deposition area.
  • the dividing edge 7′a is a boundary corresponding to the panel edge in FIG. 5A, and indicates the boundary before dividing.
  • the frame corresponding zone code 7′b is shown in FIG. ) Indicates a region corresponding to the frame region 7b
  • the vapor deposition area 8 ′ indicates a region corresponding to the display area 8 in FIG.
  • the howling sheet 127 includes a linear portion 127 b and a protruding portion 127 a that protrudes from the linear portion 127 b so as to correspond to the notch portion 9, and forms the TFT layer 4 described above.
  • the first metal pattern 111 is formed on the deposition target substrate 110 at a position overlapping the protruding portion 127a.
  • the protruding portion 127 a has a shape corresponding to the notch portion 9 provided in the display area 8 of the completed device 7.
  • the protruding portion 127 a covers the portion corresponding to the notch portion 9 in the opening region 126 a of the FMM sheet 126, thereby preventing film formation on the notch portion 9.
  • 3 to 5 exemplify a configuration in which one rectangular howling sheet 127 includes two substantially rectangular protrusions 127a.
  • the present embodiment is not limited thereto, and the dimensions and shapes of the products are not limited thereto. It can change suitably according to etc.
  • the howling sheet 127 includes the linear portion 127b and the protruding portion 127a, and the first metal pattern 111 is formed at the position where the protruding portion 127a overlaps.
  • This embodiment is not limited.
  • the cover sheet 131 may include a linear portion and a protruding portion, and the first metal pattern 111 may be formed at a position overlapping the protruding portion.
  • the low power supply voltage trunk line ML in the same layer as the source line SH (FIG. 6), and the relay line LW in the same layer as the anode 22 (FIG. 6) are connected to the connection portion SB.
  • the organic insulating film 23y of the same layer as the planarizing film 21 and the edge cover 23 (FIG. 6) is penetrated.
  • the planarizing film 21 and the organic insulating film 23y are penetrated, and the cathode 25 and the relay wiring LW are in contact with each other.
  • the trench TC also has a function of cutting off moisture penetration.
  • Bank BK1 (consisting of organic insulating film 23y) and bank BK2 (comprising planarizing film 21 and organic insulating film 23y) function as a droplet stopper.
  • the first metal pattern 111 is arranged so as to overlap the banks BK1 and BK2 and the trench TC.
  • the first metal pattern 111 is formed on the deposition target substrate 110 to relieve the magnetic field to the protrusion 127a due to the magnetic force of the magnet plate 121, and the FMM sheet 126 is stabilized by the howling sheet 127 and the cover sheet 131. Therefore, it is possible to suppress the occurrence of film formation defects. As a result, even in the display device having the notch portion 9, the FMM sheet 126 can be stably supported by the howling sheet 127 and the cover sheet 131.
  • the first metal pattern 111 is formed so as to overlap the frame region 7 b between the edge of the notch portion 9 and the display area 8 along the notch portion 9. According to this configuration, since the first metal pattern 111 is formed so as to overlap the frame region, it is possible to effectively suppress film formation on the notch portion 9.
  • the step of forming the TFT layer 4 includes a step of forming a plurality of metal layers and a step of forming an insulating film so as to be sandwiched between the plurality of metal layers.
  • the pattern 111 is formed by laminating the plurality of metal layers. In the first metal pattern 111, the insulating film may be sandwiched between the plurality of metal layers.
  • the magnetic field of the protrusion 127a caused by the first metal pattern 111 is further relaxed, and the FMM sheet 126 is more stably supported by the howling sheet 127. Can do.
  • the first metal pattern 111 may be any one of the gate layer, the capacitor wiring layer, and the source layer. According to this configuration, versatility can be imparted to the first metal pattern 111.
  • the first metal pattern 111 is preferably made of a magnetic metal that can be magnetized. According to this configuration, the magnetic field to the protrusion 127a due to the magnetic force of the magnet plate 121 can be effectively reduced, and the FMM sheet 126 can be supported more stably by the howling sheet 127.
  • the formation area of the first metal pattern 111, the overlapping area of the first metal pattern 111 and the protrusion 127a, and the first metal pattern 111 in a mesh configuration It is possible to make adjustments by appropriately changing the design by using the above or by adjusting the thickness of the first metal pattern 111.
  • the first metal pattern 111 may be configured to overlap with the entire region of the protrusion 127a. According to the configuration using each of the above methods, the amount of relaxation of the magnetic field applied to the protrusion 127a by the magnetic force of the magnet plate 121 can be suitably adjusted.
  • Embodiment 2 of the present invention will be described below.
  • members having the same functions as those described in the first embodiment are given the same reference numerals, and the description thereof will not be repeated.
  • the main difference between the present embodiment and the first embodiment is that a second metal pattern is further formed on the deposition target substrate 110 in the present embodiment. The above differences will be mainly described below with reference to FIGS.
  • FIG. 7 is an exploded perspective view showing a configuration in which the first metal pattern 111 and the second metal pattern 112 are formed on the deposition target substrate 110 of the vapor deposition apparatus 100a according to the present embodiment.
  • FIG. 8A is a schematic diagram of a completed device in which the first metal pattern 111 and the second metal pattern 112 are formed
  • FIG. 8B is a schematic diagram showing an aspect during vapor deposition of FIG.
  • FIG. 9 is a schematic diagram showing a modification of FIG.
  • the vapor deposition apparatus 100a includes a vapor deposition mask 125, a magnet plate 121, and a vapor deposition source (not shown).
  • the vapor deposition mask 125 includes at least an FMM sheet 126, a howling sheet 127, and a cover sheet 131.
  • the howling sheet 127 includes a linear portion 127b.
  • a second metal pattern 112 is formed at a position overlapping the linear portion 127b of the deposition target substrate 110a on which the vapor deposition particles are deposited.
  • the howling sheet 127 includes the linear portion 127b, and the second metal pattern 112 is formed at a position overlapping the linear portion 127b of the deposition target substrate 110a.
  • the cover sheet 131 may include a linear portion, and the second metal pattern 112 may be formed on the deposition target substrate at a position overlapping the linear portion.
  • the thickness of the second metal pattern 112 is thinner than the thickness of the first metal pattern 111.
  • the magnetic field acting on the entire howling sheet 127 can be made uniform.
  • the FMM sheet 126 can be stably supported by the howling sheet 127, and the occurrence of film formation defects can be suppressed.
  • the second metal pattern 112 is any one of a gate layer, a capacitor wiring layer, and a source layer. According to this configuration, versatility can be imparted to the second metal pattern 112.
  • the 2nd metal pattern 112 is comprised with the magnetic metal which can be magnetized.
  • the present embodiment exemplifies a configuration in which the thickness of the second metal pattern 112 is made thinner than the thickness of the first metal pattern 111.
  • the embodiment is not limited to this.
  • at least one opening 112a1 may be formed in the second metal pattern 112a. According to this configuration, it is possible to make the magnetic field acting on the entire howling sheet 127 uniform without adjusting the thickness of the second metal pattern.
  • the electro-optical element (electro-optical element whose luminance and transmittance are controlled by current) included in the display device according to the present embodiment is not particularly limited.
  • an organic EL (Electro Luminescence) display including an OLED (Organic Light Emitting Diode) as an electro-optical element, and an inorganic light-emitting diode as an electro-optical element are provided.
  • Inorganic EL displays, and QLED displays equipped with QLEDs (Quantum dot Light Emitting Diodes) as electro-optical elements are exemplified.
  • a manufacturing method of a display device (EL display device 2) according to aspect 1 of the present invention is a manufacturing method of a display device having a notch portion (9) in a display area (8), and is provided on a deposition target substrate (110).
  • a TFT layer forming step for forming the TFT layer (4), and a film formation substrate (110) including the TFT layer (4) are provided with an FMM sheet (126), a howling sheet (127), and a cover sheet (131).
  • the protruding portion (127a) of the deposition target substrate (110). Forming a first metal pattern (111) in a position to be superimposed.
  • the first metal pattern (111) has an edge of the notch portion (9) and a display area so as to extend along the notch portion (9). 8) and may be formed so as to overlap with the frame area between.
  • the TFT layer forming step is sandwiched between the step of forming a plurality of metal layers and the plurality of metal layers.
  • the first metal pattern (111) may be formed by laminating the plurality of metal layers.
  • the insulating film in the display device manufacturing method according to aspect 4 of the present invention, in the above aspect 3, in the first metal pattern (111), the insulating film may be sandwiched between the plurality of metal layers.
  • the first metal pattern (111) is any one of a gate layer, a capacitor wiring layer, and a source layer. It may be one.
  • the first metal pattern (111) is made of a magnetic metal that can be magnetized. Also good.
  • the first metal pattern (111) may overlap the entire region of the protrusion.
  • the method for manufacturing a display device according to aspect 8 of the present invention is the method for manufacturing a display device according to any one of the above aspects 1 to 7, wherein the second metal pattern (at the position overlapping the linear portion of the deposition target substrate (110)). 112) may be formed.
  • the thickness of the second metal pattern (112) may be smaller than the thickness of the first metal pattern (111).
  • the second metal pattern (112) is any one of a gate layer, a capacitor wiring layer, and a source layer. It may be one.
  • the second metal pattern (112) is made of a magnetic metal that can be magnetized. Also good.
  • At least one of the howling sheet (127) and the cover sheet (131) may be composed of invar. Good.
  • At least one of the howling sheet (127) and the cover sheet (131) is made of stainless steel. Also good.
  • the display device (EL display device 2) is a display device having a notch portion (9) in the display area (8), which is more than the TFT layer (4) and the TFT layer (4).
  • the TFT layer (4) includes the first metal pattern (111), and the first metal pattern (111) includes the edge of the notch (9) and the display area (8). It overlaps with the frame area between.

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  • General Physics & Mathematics (AREA)
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Même avec un dispositif d'affichage comportant une partie encoche, il est possible de supporter de manière stable une feuille de masque métallique fin (FMM) à l'aide d'une feuille de production de bruit par rétroaction acoustique ou d'une feuille de couverture. L'invention concerne un procédé de fabrication d'un dispositif d'affichage comportant une partie encoche (9), ledit procédé comprenant une étape de formation de couche de TFT et une étape de formation de couche fonctionnelle. Une feuille de production de bruit par rétroaction acoustique (127) et/ou une feuille de couverture (131) d'un masque de dépôt utilisé dans l'étape de formation de couche fonctionnelle comprennent des saillies, et des premiers motifs métalliques (111) sont formés dans des positions, sur un substrat de formation de film (110), qui sont superposées aux saillies.
PCT/JP2018/012559 2018-03-27 2018-03-27 Procédé de fabrication de dispositif d'affichage, et dispositif d'affichage WO2019186720A1 (fr)

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JP2005232474A (ja) * 2004-02-17 2005-09-02 Dainippon Screen Mfg Co Ltd 蒸着用マスク
JP2017179591A (ja) * 2016-03-29 2017-10-05 株式会社ブイ・テクノロジー 成膜マスク、その製造方法及び成膜マスクのリペア方法
CN107340661A (zh) * 2017-08-18 2017-11-10 广东欧珀移动通信有限公司 阵列基板、显示面板和电子设备
CN107561806A (zh) * 2017-09-29 2018-01-09 厦门天马微电子有限公司 阵列基板及显示面板
CN107656397A (zh) * 2017-09-29 2018-02-02 厦门天马微电子有限公司 一种显示设备
CN107731151A (zh) * 2017-11-30 2018-02-23 信利（惠州）智能显示有限公司 阵列基板及显示装置
CN107740065A (zh) * 2017-09-26 2018-02-27 京东方科技集团股份有限公司 一种掩模版及其成膜方法、成膜设备
CN107797328A (zh) * 2017-11-30 2018-03-13 武汉天马微电子有限公司 显示面板和显示装置
CN107895734A (zh) * 2017-11-30 2018-04-10 武汉天马微电子有限公司 一种有机发光显示面板和有机发光显示装置
CN107994054A (zh) * 2017-11-07 2018-05-04 上海天马有机发光显示技术有限公司 一种有机电致发光显示面板、其制作方法及显示装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005232474A (ja) * 2004-02-17 2005-09-02 Dainippon Screen Mfg Co Ltd 蒸着用マスク
JP2017179591A (ja) * 2016-03-29 2017-10-05 株式会社ブイ・テクノロジー 成膜マスク、その製造方法及び成膜マスクのリペア方法
CN107340661A (zh) * 2017-08-18 2017-11-10 广东欧珀移动通信有限公司 阵列基板、显示面板和电子设备
CN107740065A (zh) * 2017-09-26 2018-02-27 京东方科技集团股份有限公司 一种掩模版及其成膜方法、成膜设备
CN107561806A (zh) * 2017-09-29 2018-01-09 厦门天马微电子有限公司 阵列基板及显示面板
CN107656397A (zh) * 2017-09-29 2018-02-02 厦门天马微电子有限公司 一种显示设备
CN107994054A (zh) * 2017-11-07 2018-05-04 上海天马有机发光显示技术有限公司 一种有机电致发光显示面板、其制作方法及显示装置
CN107731151A (zh) * 2017-11-30 2018-02-23 信利（惠州）智能显示有限公司 阵列基板及显示装置
CN107797328A (zh) * 2017-11-30 2018-03-13 武汉天马微电子有限公司 显示面板和显示装置
CN107895734A (zh) * 2017-11-30 2018-04-10 武汉天马微电子有限公司 一种有机发光显示面板和有机发光显示装置

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