WO2019186720A1 - Manufacturing method for display device, and display device - Google Patents

Manufacturing method for display device, and display device Download PDF

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Publication number
WO2019186720A1
WO2019186720A1 PCT/JP2018/012559 JP2018012559W WO2019186720A1 WO 2019186720 A1 WO2019186720 A1 WO 2019186720A1 JP 2018012559 W JP2018012559 W JP 2018012559W WO 2019186720 A1 WO2019186720 A1 WO 2019186720A1
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Prior art keywords
display device
metal pattern
layer
manufacturing
sheet
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PCT/JP2018/012559
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French (fr)
Japanese (ja)
Inventor
井上　毅
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シャープ株式会社
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Priority to PCT/JP2018/012559 priority Critical patent/WO2019186720A1/en
Publication of WO2019186720A1 publication Critical patent/WO2019186720A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

Definitions

  • the present invention relates to a display device manufacturing method and a display device.
  • EL displays using electroluminescence (hereinafter referred to as “EL”) of organic materials, inorganic materials, or quantum dots are known.
  • These EL displays use a fine metal mask sheet (FMM sheet) in which a highly accurate opening is provided at an arbitrary position in the light emitting layer forming process, and emits RGB light in each region on the deposition substrate. The material is deposited to form a film.
  • FMM sheet fine metal mask sheet
  • some EL displays have notches for fingerprint sensors and cameras in the display area of the display screen.
  • the corresponding part of the FMM sheet is covered with a howling sheet, a cover sheet, or the like so that film formation is not performed on these notches.
  • Japanese Patent Publication Japanese Patent Laid-Open No. 2010-129345 (published on June 10, 2010)”
  • the FMM sheet, the howling sheet, and the cover sheet are brought into close contact with the film formation substrate using the magnetic force of the magnet.
  • a non-uniform magnetic field acts on the howling sheet or cover sheet at the time of film formation.
  • a moment is generated in the cover sheet and the FMM sheet is partially pushed up.
  • film formation defects such as vapor deposition shadow and misalignment occur.
  • the present invention has been made in view of the above problems, and the object thereof is to stably support an FMM sheet by a howling sheet or a cover sheet, even for a display device having a notch, and to prevent film formation failure. It is an object of the present invention to provide a display device manufacturing method and a display device that can suppress generation.
  • a method for manufacturing a display device is a method for manufacturing a display device having a notch portion in a display area, in which a TFT layer is formed on a deposition target substrate.
  • At least one of the howling sheet and the cover sheet includes a linear portion and a protruding portion protruding from the linear portion so as to correspond to the notch portion, and in the TFT layer forming step, the film formation substrate A first metal pattern is formed at a position overlapping the protruding portion.
  • a display device is a display device having a notch portion in a display area, and includes a TFT layer formed over a deposition target substrate and the TFT layer.
  • a pattern is formed, and the first metal pattern is formed so as to overlap the frame region between the edge of the notch portion and the display area along the notch portion.
  • the first metal pattern is formed on the deposition target substrate to reduce the magnetic field of the protruding portion, and the FMM sheet can be stably supported by the howling sheet or the cover sheet. Occurrence of film defects can be suppressed.
  • FIG. 5 is a schematic diagram of the completed device on which the first metal pattern is formed, and (b) is a schematic diagram showing a corresponding region at the time of vapor deposition of (a) together with a howling sheet and a cover sheet.
  • FIG. 8A is a schematic diagram of a completed device on which a first metal pattern and a second metal pattern are formed
  • FIG. 8B is a schematic diagram showing an aspect during vapor deposition of FIG. It is a schematic diagram which shows the modification of FIG.
  • “same layer” means formed in the same process (film formation step), and “lower layer” means formed in a process prior to the layer to be compared.
  • the “upper layer” means that it is formed in a later process than the layer to be compared.
  • FIG. 1 is a flowchart showing an example of a method for manufacturing the EL display device 2.
  • FIG. 2 is a cross-sectional view showing the configuration of the display area of the EL display device 2.
  • a resin layer 12 is formed on a translucent support substrate (for example, mother glass) (step S1).
  • the barrier layer 3 is formed (step S2).
  • the TFT layer 4 is formed (step S3).
  • a top emission type light emitting element layer 5 is formed (step S4).
  • the sealing layer 6 is formed (step S5).
  • an upper surface film is pasted on the sealing layer 6 (step S6).
  • step S7 the support substrate is peeled off from the resin layer 12 by laser light irradiation or the like.
  • the lower film 10 is attached to the lower surface of the resin layer 12 (step S8).
  • step S9 the laminate including the lower film 10, the resin layer 12, the barrier layer 3, the TFT layer 4, the light emitting element layer 5, and the sealing layer 6 is divided to obtain a plurality of pieces.
  • step S10 an electronic circuit board (for example, an IC chip and an FPC) is mounted on a part (terminal portion) of the outside (non-display area, frame area) of the display area where the plurality of sub-pixels are formed (step S11).
  • steps S1 to S11 are performed by a display device manufacturing apparatus (including a film forming apparatus that performs each step of steps S1 to S5).
  • the material of the resin layer 12 examples include polyimide.
  • the resin layer 12 may be replaced with a two-layer resin film (for example, a polyimide film) and an inorganic insulating film sandwiched between them.
  • the barrier layer 3 is a layer that prevents foreign matters such as water and oxygen from entering the TFT layer 4 and the light emitting element layer 5.
  • a silicon oxide film, a silicon nitride film, or an oxynitride formed by a CVD method is used.
  • a silicon film or a laminated film thereof can be used.
  • the TFT layer 4 includes a semiconductor film 15, an inorganic insulating film 16 (gate insulating film) above the semiconductor film 15, a gate electrode GE and a gate wiring GH above the inorganic insulating film 16, and a gate electrode GE and An inorganic insulating film 18 above the gate wiring GH, a capacitive electrode CE above the inorganic insulating film 18, an inorganic insulating film 20 above the capacitive electrode CE, and a source wiring SH above the inorganic insulating film 20 And a planarizing film 21 (interlayer insulating film) that is an upper layer than the source wiring SH.
  • the layer including the gate electrode GE and the gate wiring GH is referred to as a gate layer
  • the layer including the capacitor electrode CE and the capacitor wiring not shown connected to the capacitor electrode CE is also referred to as a capacitor wiring layer
  • the source wiring SH is The containing layer is also called a source layer.
  • the semiconductor film 15 is made of, for example, low-temperature polysilicon (LTPS) or an oxide semiconductor (for example, an In—Ga—Zn—O-based semiconductor), and a transistor (TFT) is formed so as to include the semiconductor film 15 and the gate electrode GE. Is done.
  • the transistor is shown with a top gate structure, but may have a bottom gate structure.
  • the gate electrode GE, the gate wiring GH, the capacitor electrode CE, the capacitor wiring (not shown), and the source wiring SH are, for example, a metal single layer film containing at least one of aluminum, tungsten, molybdenum, tantalum, chromium, titanium, and copper. Or it is comprised by a laminated film.
  • the TFT layer 4 in FIG. 2 includes one semiconductor layer and three metal layers.
  • the inorganic insulating films 16, 18, and 20 can be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a stacked film thereof formed by a CVD method.
  • the planarizing film 21 can be made of, for example, an applicable organic material such as polyimide or acrylic.
  • the light emitting element layer 5 includes an anode 22 above the planarizing film 21, an insulating anode cover film (edge cover) 23 covering the edge of the anode 22, and an EL (electroluminescence) layer above the anode cover film 23.
  • the layer 24 and the cathode 25 above the EL layer 24 are included.
  • the anode cover film 23 is formed, for example, by applying an organic material such as polyimide or acrylic and then patterning by photolithography.
  • a light emitting element ES for example, OLED: organic light emitting diode, QLED: quantum dot diode
  • a sub-pixel circuit for controlling is formed in the TFT layer 4.
  • the EL layer 24 is configured, for example, by laminating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in order from the lower layer side.
  • the light emitting layer is formed in an island shape in the opening (for each subpixel) of the anode cover film 23 by a vapor deposition method or an ink jet method.
  • the other layers are formed in an island shape or a solid shape (common layer).
  • the structure which does not form one or more layers among a positive hole injection layer, a positive hole transport layer, an electron carrying layer, and an electron injection layer is also possible.
  • the vapor deposition mask When vapor-depositing the light emitting layer of the OLED, a vapor deposition mask is used.
  • the vapor deposition mask includes a sheet-like FMM (fine metal mask) sheet having a large number of openings.
  • the FMM sheet is made of, for example, Invar, and an island-like light emitting layer (corresponding to one subpixel) is formed by an organic material that has passed through one opening.
  • the light emitting layer of the QLED can form an island-shaped light emitting layer (corresponding to one subpixel) by, for example, applying a solvent in which quantum dots are diffused by inkjet.
  • the anode 22 is composed of, for example, a laminate of ITO (IndiumITOTin Oxide) and Ag (silver) or an alloy containing Ag, and has light reflectivity.
  • the cathode (cathode) 25 can be made of a light-transmitting conductive material such as MgAg alloy (ultra-thin film), ITO, or IZO (Indium zinc Oxide).
  • the light-emitting element ES is an OLED
  • holes and electrons are recombined in the light-emitting layer by the driving current between the anode 22 and the cathode 25, and light is emitted in the process in which the excitons generated thereby transition to the ground state.
  • the cathode 25 is light-transmitting and the anode 22 is light-reflective, the light emitted from the EL layer 24 is directed upward and becomes top emission.
  • the light-emitting element ES is a QLED
  • holes and electrons are recombined in the light-emitting layer due to the drive current between the anode 22 and the cathode 25, and the excitons generated thereby are conduction band levels of the quantum dots.
  • Light (fluorescence) is emitted in the process of transition from valence band level to valence band.
  • a light emitting element inorganic light emitting diode or the like
  • OLED organic light emitting diode
  • the sealing layer 6 is translucent, and includes an inorganic sealing film 26 that covers the cathode 25, an organic buffer film 27 that is above the inorganic sealing film 26, and an inorganic sealing film 28 that is above the organic buffer film 27. Including.
  • the sealing layer 6 covering the light emitting element layer 5 prevents penetration of foreign substances such as water and oxygen into the light emitting element layer 5.
  • Each of the inorganic sealing film 26 and the inorganic sealing film 28 is an inorganic insulating film, and is formed of, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a laminated film thereof formed by a CVD method. be able to.
  • the organic buffer film 27 is a light-transmitting organic film having a flattening effect, and can be made of a coatable organic material such as acrylic.
  • the organic buffer film 27 can be formed by, for example, inkjet coating, but a bank BK for stopping the liquid droplets may be provided in the non-display area.
  • the lower film 10 is, for example, a PET film for realizing the EL display device 2 having excellent flexibility by being attached to the lower surface of the resin layer 12 after peeling off the support substrate.
  • the functional film 39 has, for example, at least one of an optical compensation function, a touch sensor function, and a protection function.
  • Embodiment 1 Embodiment 1 of the present invention will be described below with reference to FIGS.
  • FIG. 3 is an exploded perspective view showing a configuration in which the first metal pattern 111 is formed on the deposition target substrate 110 of the vapor deposition apparatus 100 according to the first embodiment.
  • FIG. 4 is a plan view showing the configuration of the vapor deposition mask 125 according to the first embodiment.
  • FIG. 5A is a schematic diagram of the completed device 7 on which the first metal pattern 111 is formed
  • FIG. 5B is a schematic diagram showing a corresponding region at the time of vapor deposition of FIG. 5A together with a howling sheet and a cover sheet. is there.
  • FIG. 6 is a cross-sectional view showing the vicinity of the end face of the notch portion 9 in FIG. 5 (a part of the frame region 7b).
  • the vapor deposition apparatus 100 is an apparatus for forming a vapor deposition film made of a vapor deposition material (not shown) in a film formation area of the deposition target substrate 110.
  • a case where the light emitting element layer 5 of the EL display device 2 is formed as a vapor deposition film will be described as an example.
  • the vapor deposition apparatus 100 includes a vapor deposition mask 125, a magnet plate 121, and a vapor deposition source (not shown), and these are housed in a film formation chamber including a rotation mechanism (not shown), a deposition plate, a shutter, and the like. Has been. Note that, although not illustrated, the film formation chamber is provided with a vacuum pump, an exhaust port, and the like for keeping the inside of the film formation chamber in a vacuum state.
  • the vapor deposition mask 125 is a mask for forming a vapor deposition film made of a vapor deposition material (not shown) in a film formation area of the deposition target substrate 110.
  • the vapor deposition mask 125 is formed of a magnetic material and is in close contact with the film formation area side of the film formation substrate 110.
  • the vapor deposition mask 125 is attracted to the film formation area side of the film formation substrate 110 by the magnetic force of the magnet plate 121 provided on the surface opposite to the film formation area of the film formation substrate 110, and is formed. It is comprised so that it may closely_contact
  • a vapor deposition source (not shown) is a container for accommodating a vapor deposition material, and generates vapor deposition particles in a gaseous state by heating or evaporating or sublimating the vapor deposition material.
  • the vapor deposition source injects the generated gaseous vapor deposition particles toward the deposition area of the deposition target substrate 110.
  • the vapor deposition particles injected toward the film formation area 111 of the film formation substrate 110 pass through the opening region 126a of the vapor deposition mask 125, and a light emitting layer having a shape corresponding to the opening region 126a is formed in the film formation area. .
  • a touch plate 122 including a touch sensor is disposed between the magnet plate 121 and the deposition target substrate 110.
  • the deposition mask 125 includes at least an FMM sheet 126, a howling sheet 127, a cover sheet 131, and a frame 130.
  • the FMM sheet 126 has a plurality of opening regions 126a.
  • the FMM sheet 126 is an elongated sheet, and a plurality of opening regions 126a are arranged in the longitudinal direction.
  • the opening region 126a is formed in the FMM sheet 126 with high positional accuracy by laser processing or the like.
  • the FMM sheet 126 is formed of a magnetic metal having magnetism such as iron, nickel, invar (iron-nickel alloy), SUS430, or the like. Of these magnetic metals, invar, which is an iron-nickel alloy that is hardly deformed by heat, can be preferably used. As described above, since the FMM sheet 126 is formed of a magnetic metal, the FMM sheet 126 is closely attached to the deposition target substrate 110 by the magnetic force of the magnet plate 121.
  • the howling sheet 127 is disposed so as to extend in a direction perpendicular to the longitudinal direction of each FMM sheet 126.
  • the howling sheets 127 extend in the arrangement direction in which a plurality of FMM sheets 126 are arranged in parallel to each other, and a plurality of howling sheets 127 are arranged in the longitudinal direction of the FMM sheets 126.
  • the howling sheets 127 are preferably arranged along the edge of the opening region 126a.
  • the howling sheet 127 has a function of a beam that receives the weight of the elongated FMM sheet 126 and prevents the FMM sheet 126 from being loosened by its own weight.
  • the howling sheet 127 is made of a magnetic metal having magnetism such as iron, nickel, invar (iron-nickel alloy), SUS430, or the like. As described above, the howling sheet 127 is made of a magnetic metal, so that it is attracted to the film formation substrate 110 side by the magnetic force of the magnet plate 121 and presses the FMM sheet 126 against the film formation substrate 110.
  • the cover sheet 131 closes gaps between the FMM sheets 126 arranged in parallel in the short direction.
  • the cover sheet 131 is formed of a magnetic metal having magnetism, and is preferably formed of, for example, iron, nickel, invar (iron-nickel alloy), SUS430, or the like.
  • the cover sheet 131 is attracted to the film formation substrate 110 side by the magnetic force of the magnet plate 121.
  • the frame 130 holds the FMM sheet 126, the howling sheet 127, and the cover sheet 131 arranged in order from the side close to the deposition target substrate 110.
  • the frame 130 is formed of magnetic metal having magnetism, and is preferably formed of, for example, iron, nickel, invar (iron-nickel alloy), SUS430, or the like.
  • the notched portion 9 is formed in the display area (evaporation area) 8 in the completed device 7 of the EL display device 2.
  • the notch portion 9 is deteriorated by moisture or oxygen if a vapor deposition film is present on the cross section where notching is performed. For this reason, it is necessary to seal the end surface of the notch portion 9 with a barrier film or the like. Therefore, in the vapor deposition step, the notch portion 9 needs to cover the vapor deposition material so that the vapor deposition material is not deposited on the notch portion 9.
  • FIG. 1 Display device with notch
  • reference numeral 7a indicates a panel edge that is an outer edge of the panel of the completed device 7
  • reference numeral 7b indicates a frame area (non-display area) provided between the panel edge and the display area.
  • reference numeral 7′a indicates a split edge
  • reference numeral 7′b indicates a frame corresponding zone
  • reference numeral 8 ′ indicates a vapor deposition area.
  • the dividing edge 7′a is a boundary corresponding to the panel edge in FIG. 5A, and indicates the boundary before dividing.
  • the frame corresponding zone code 7′b is shown in FIG. ) Indicates a region corresponding to the frame region 7b
  • the vapor deposition area 8 ′ indicates a region corresponding to the display area 8 in FIG.
  • the howling sheet 127 includes a linear portion 127 b and a protruding portion 127 a that protrudes from the linear portion 127 b so as to correspond to the notch portion 9, and forms the TFT layer 4 described above.
  • the first metal pattern 111 is formed on the deposition target substrate 110 at a position overlapping the protruding portion 127a.
  • the protruding portion 127 a has a shape corresponding to the notch portion 9 provided in the display area 8 of the completed device 7.
  • the protruding portion 127 a covers the portion corresponding to the notch portion 9 in the opening region 126 a of the FMM sheet 126, thereby preventing film formation on the notch portion 9.
  • 3 to 5 exemplify a configuration in which one rectangular howling sheet 127 includes two substantially rectangular protrusions 127a.
  • the present embodiment is not limited thereto, and the dimensions and shapes of the products are not limited thereto. It can change suitably according to etc.
  • the howling sheet 127 includes the linear portion 127b and the protruding portion 127a, and the first metal pattern 111 is formed at the position where the protruding portion 127a overlaps.
  • This embodiment is not limited.
  • the cover sheet 131 may include a linear portion and a protruding portion, and the first metal pattern 111 may be formed at a position overlapping the protruding portion.
  • the low power supply voltage trunk line ML in the same layer as the source line SH (FIG. 6), and the relay line LW in the same layer as the anode 22 (FIG. 6) are connected to the connection portion SB.
  • the organic insulating film 23y of the same layer as the planarizing film 21 and the edge cover 23 (FIG. 6) is penetrated.
  • the planarizing film 21 and the organic insulating film 23y are penetrated, and the cathode 25 and the relay wiring LW are in contact with each other.
  • the trench TC also has a function of cutting off moisture penetration.
  • Bank BK1 (consisting of organic insulating film 23y) and bank BK2 (comprising planarizing film 21 and organic insulating film 23y) function as a droplet stopper.
  • the first metal pattern 111 is arranged so as to overlap the banks BK1 and BK2 and the trench TC.
  • the first metal pattern 111 is formed on the deposition target substrate 110 to relieve the magnetic field to the protrusion 127a due to the magnetic force of the magnet plate 121, and the FMM sheet 126 is stabilized by the howling sheet 127 and the cover sheet 131. Therefore, it is possible to suppress the occurrence of film formation defects. As a result, even in the display device having the notch portion 9, the FMM sheet 126 can be stably supported by the howling sheet 127 and the cover sheet 131.
  • the first metal pattern 111 is formed so as to overlap the frame region 7 b between the edge of the notch portion 9 and the display area 8 along the notch portion 9. According to this configuration, since the first metal pattern 111 is formed so as to overlap the frame region, it is possible to effectively suppress film formation on the notch portion 9.
  • the step of forming the TFT layer 4 includes a step of forming a plurality of metal layers and a step of forming an insulating film so as to be sandwiched between the plurality of metal layers.
  • the pattern 111 is formed by laminating the plurality of metal layers. In the first metal pattern 111, the insulating film may be sandwiched between the plurality of metal layers.
  • the magnetic field of the protrusion 127a caused by the first metal pattern 111 is further relaxed, and the FMM sheet 126 is more stably supported by the howling sheet 127. Can do.
  • the first metal pattern 111 may be any one of the gate layer, the capacitor wiring layer, and the source layer. According to this configuration, versatility can be imparted to the first metal pattern 111.
  • the first metal pattern 111 is preferably made of a magnetic metal that can be magnetized. According to this configuration, the magnetic field to the protrusion 127a due to the magnetic force of the magnet plate 121 can be effectively reduced, and the FMM sheet 126 can be supported more stably by the howling sheet 127.
  • the formation area of the first metal pattern 111, the overlapping area of the first metal pattern 111 and the protrusion 127a, and the first metal pattern 111 in a mesh configuration It is possible to make adjustments by appropriately changing the design by using the above or by adjusting the thickness of the first metal pattern 111.
  • the first metal pattern 111 may be configured to overlap with the entire region of the protrusion 127a. According to the configuration using each of the above methods, the amount of relaxation of the magnetic field applied to the protrusion 127a by the magnetic force of the magnet plate 121 can be suitably adjusted.
  • Embodiment 2 of the present invention will be described below.
  • members having the same functions as those described in the first embodiment are given the same reference numerals, and the description thereof will not be repeated.
  • the main difference between the present embodiment and the first embodiment is that a second metal pattern is further formed on the deposition target substrate 110 in the present embodiment. The above differences will be mainly described below with reference to FIGS.
  • FIG. 7 is an exploded perspective view showing a configuration in which the first metal pattern 111 and the second metal pattern 112 are formed on the deposition target substrate 110 of the vapor deposition apparatus 100a according to the present embodiment.
  • FIG. 8A is a schematic diagram of a completed device in which the first metal pattern 111 and the second metal pattern 112 are formed
  • FIG. 8B is a schematic diagram showing an aspect during vapor deposition of FIG.
  • FIG. 9 is a schematic diagram showing a modification of FIG.
  • the vapor deposition apparatus 100a includes a vapor deposition mask 125, a magnet plate 121, and a vapor deposition source (not shown).
  • the vapor deposition mask 125 includes at least an FMM sheet 126, a howling sheet 127, and a cover sheet 131.
  • the howling sheet 127 includes a linear portion 127b.
  • a second metal pattern 112 is formed at a position overlapping the linear portion 127b of the deposition target substrate 110a on which the vapor deposition particles are deposited.
  • the howling sheet 127 includes the linear portion 127b, and the second metal pattern 112 is formed at a position overlapping the linear portion 127b of the deposition target substrate 110a.
  • the cover sheet 131 may include a linear portion, and the second metal pattern 112 may be formed on the deposition target substrate at a position overlapping the linear portion.
  • the thickness of the second metal pattern 112 is thinner than the thickness of the first metal pattern 111.
  • the magnetic field acting on the entire howling sheet 127 can be made uniform.
  • the FMM sheet 126 can be stably supported by the howling sheet 127, and the occurrence of film formation defects can be suppressed.
  • the second metal pattern 112 is any one of a gate layer, a capacitor wiring layer, and a source layer. According to this configuration, versatility can be imparted to the second metal pattern 112.
  • the 2nd metal pattern 112 is comprised with the magnetic metal which can be magnetized.
  • the present embodiment exemplifies a configuration in which the thickness of the second metal pattern 112 is made thinner than the thickness of the first metal pattern 111.
  • the embodiment is not limited to this.
  • at least one opening 112a1 may be formed in the second metal pattern 112a. According to this configuration, it is possible to make the magnetic field acting on the entire howling sheet 127 uniform without adjusting the thickness of the second metal pattern.
  • the electro-optical element (electro-optical element whose luminance and transmittance are controlled by current) included in the display device according to the present embodiment is not particularly limited.
  • an organic EL (Electro Luminescence) display including an OLED (Organic Light Emitting Diode) as an electro-optical element, and an inorganic light-emitting diode as an electro-optical element are provided.
  • Inorganic EL displays, and QLED displays equipped with QLEDs (Quantum dot Light Emitting Diodes) as electro-optical elements are exemplified.
  • a manufacturing method of a display device (EL display device 2) according to aspect 1 of the present invention is a manufacturing method of a display device having a notch portion (9) in a display area (8), and is provided on a deposition target substrate (110).
  • a TFT layer forming step for forming the TFT layer (4), and a film formation substrate (110) including the TFT layer (4) are provided with an FMM sheet (126), a howling sheet (127), and a cover sheet (131).
  • the protruding portion (127a) of the deposition target substrate (110). Forming a first metal pattern (111) in a position to be superimposed.
  • the first metal pattern (111) has an edge of the notch portion (9) and a display area so as to extend along the notch portion (9). 8) and may be formed so as to overlap with the frame area between.
  • the TFT layer forming step is sandwiched between the step of forming a plurality of metal layers and the plurality of metal layers.
  • the first metal pattern (111) may be formed by laminating the plurality of metal layers.
  • the insulating film in the display device manufacturing method according to aspect 4 of the present invention, in the above aspect 3, in the first metal pattern (111), the insulating film may be sandwiched between the plurality of metal layers.
  • the first metal pattern (111) is any one of a gate layer, a capacitor wiring layer, and a source layer. It may be one.
  • the first metal pattern (111) is made of a magnetic metal that can be magnetized. Also good.
  • the first metal pattern (111) may overlap the entire region of the protrusion.
  • the method for manufacturing a display device according to aspect 8 of the present invention is the method for manufacturing a display device according to any one of the above aspects 1 to 7, wherein the second metal pattern (at the position overlapping the linear portion of the deposition target substrate (110)). 112) may be formed.
  • the thickness of the second metal pattern (112) may be smaller than the thickness of the first metal pattern (111).
  • the second metal pattern (112) is any one of a gate layer, a capacitor wiring layer, and a source layer. It may be one.
  • the second metal pattern (112) is made of a magnetic metal that can be magnetized. Also good.
  • At least one of the howling sheet (127) and the cover sheet (131) may be composed of invar. Good.
  • At least one of the howling sheet (127) and the cover sheet (131) is made of stainless steel. Also good.
  • the display device (EL display device 2) is a display device having a notch portion (9) in the display area (8), which is more than the TFT layer (4) and the TFT layer (4).
  • the TFT layer (4) includes the first metal pattern (111), and the first metal pattern (111) includes the edge of the notch (9) and the display area (8). It overlaps with the frame area between.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
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  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

Even with a display device having a notch part, it is possible to stably support an FMM sheet using a howling sheet or a cover sheet. A manufacturing method for a display device having a notch part (9), wherein said method comprises a TFT layer forming step and a functional layer forming step. A howling sheet (127) and/or a cover sheet (131) of a deposition mask used in the functional layer forming step comprise(s) projections, and first metal patterns (111) are formed in positions on a film forming substrate (110) that are superimposed on the projections.

Description

表示デバイスの製造方法、及び表示デバイスDisplay device manufacturing method and display device
　本発明は、表示デバイスの製造方法、及び表示デバイスに関する。 The present invention relates to a display device manufacturing method and a display device.
　従来、有機材料、無機材料、又は量子ドットの電界発光（Electro luminescence；以下、「ＥＬ」と記す）を利用したＥＬディスプレイが知られている。これらのＥＬディスプレイでは、発光層の形成工程において、任意の位置に高精度な開口部が設けられたファインメタルマスクシート（ＦＭＭシート）を用いて、被成膜基板上の各領域にＲＧＢの発光材料を蒸着して成膜する。 Conventionally, EL displays using electroluminescence (hereinafter referred to as “EL”) of organic materials, inorganic materials, or quantum dots are known. These EL displays use a fine metal mask sheet (FMM sheet) in which a highly accurate opening is provided at an arbitrary position in the light emitting layer forming process, and emits RGB light in each region on the deposition substrate. The material is deposited to form a film.
　ところで近年、ＥＬディスプレイにおいて、表示画面の表示エリアに指紋センサーやカメラ用のノッチ部を有するものがある。発光層の形成工程では、これらのノッチ部に成膜が行われないように、ＦＭＭシートの対応箇所にハウリングシートやカバーシート等を用いて覆っている。 By the way, in recent years, some EL displays have notches for fingerprint sensors and cameras in the display area of the display screen. In the light emitting layer forming step, the corresponding part of the FMM sheet is covered with a howling sheet, a cover sheet, or the like so that film formation is not performed on these notches.
日本国公開特許公報「特開２０１０－１２９３４５号（２０１０年６月１０日公開）」Japanese Patent Publication “Japanese Patent Laid-Open No. 2010-129345 (published on June 10, 2010)”
　ところで、発光層の形成工程では、ＦＭＭシートやハウリングシート及びカバーシートを、マグネットの磁力を用いて被成膜基板に密着させるのが一般的である。しかしながら、ノッチ部を有する表示デバイスでは、ノッチ部に成膜しないため非対称形状のハウリングシートやカバーシートを用いた場合、成膜時に不均一な磁界がハウリングシートやカバーシートに作用し、このハウリングシートやカバーシートにモーメントが発生しＦＭＭシートを部分的に押し上げてしまう場合がある。このように、ＦＭＭシートが部分的に押し上げられた場合には、蒸着シャドーや位置ズレなどの成膜不良が発生するという問題がある。 Incidentally, in the step of forming the light emitting layer, it is general that the FMM sheet, the howling sheet, and the cover sheet are brought into close contact with the film formation substrate using the magnetic force of the magnet. However, in a display device having a notch portion, since a film is not formed on the notch portion, when an asymmetrical howling sheet or cover sheet is used, a non-uniform magnetic field acts on the howling sheet or cover sheet at the time of film formation. There is a case where a moment is generated in the cover sheet and the FMM sheet is partially pushed up. As described above, when the FMM sheet is partially pushed up, there is a problem in that film formation defects such as vapor deposition shadow and misalignment occur.
　本発明は、上記の課題に鑑みなされたものであって、その目的は、ノッチ部を有する表示デバイスであっても、ハウリングシートやカバーシートによりＦＭＭシートを安定して支持し、成膜不良の発生を抑制することができる表示デバイスの製造方法、及び表示デバイスを提供することにある。 The present invention has been made in view of the above problems, and the object thereof is to stably support an FMM sheet by a howling sheet or a cover sheet, even for a display device having a notch, and to prevent film formation failure. It is an object of the present invention to provide a display device manufacturing method and a display device that can suppress generation.
　上記の課題を解決するために、本発明の一態様に係る表示デバイスの製造方法は、表示エリアにノッチ部を有する表示デバイスの製造方法であって、被成膜基板にＴＦＴ層を形成するＴＦＴ層形成工程と、上記ＴＦＴ層を含む上記被成膜基板に、ＦＭＭシート、ハウリングシート、およびカバーシートを備えた蒸着マスクを用いて、機能層を形成する機能層形成工程と、を含み、上記ハウリングシート、およびカバーシートの少なくとも一方は、直線状部と、上記ノッチ部に対応するように上記直線状部から突出する突出部と、を備え、上記ＴＦＴ層形成工程では、上記被成膜基板の、上記突出部と重畳する位置に第１金属パターンを形成する。 In order to solve the above problems, a method for manufacturing a display device according to one embodiment of the present invention is a method for manufacturing a display device having a notch portion in a display area, in which a TFT layer is formed on a deposition target substrate. A layer forming step, and a functional layer forming step of forming a functional layer on the deposition target substrate including the TFT layer, using a vapor deposition mask provided with an FMM sheet, a howling sheet, and a cover sheet. At least one of the howling sheet and the cover sheet includes a linear portion and a protruding portion protruding from the linear portion so as to correspond to the notch portion, and in the TFT layer forming step, the film formation substrate A first metal pattern is formed at a position overlapping the protruding portion.
　上記の課題を解決するために、本発明の一態様に係る表示デバイスは、表示エリアにノッチ部を有する表示デバイスであって、被成膜基板に形成されたＴＦＴ層と、上記ＴＦＴ層を含む上記被成膜基板に、ＦＭＭシート、ハウリングシート、およびカバーシートを備えた蒸着マスクを用いて形成された機能層と、を有し、上記ハウリングシート、およびカバーシートの少なくとも一方は、直線状部と、上記ノッチ部に対応するように上記直線状部から突出する突出部と、を備え、上記ＴＦＴ層を形成する際、上記被成膜基板の、上記突出部と重畳する位置に第１金属パターンを形成し、上記第１金属パターンは、上記ノッチ部に沿うように、当該ノッチ部の縁と上記表示エリアとの間の額縁領域に重畳して形成されている。 In order to solve the above problems, a display device according to one embodiment of the present invention is a display device having a notch portion in a display area, and includes a TFT layer formed over a deposition target substrate and the TFT layer. A functional layer formed on the deposition substrate using a vapor deposition mask including an FMM sheet, a howling sheet, and a cover sheet, and at least one of the howling sheet and the cover sheet includes a linear portion And a projecting portion projecting from the linear portion so as to correspond to the notch portion, and when forming the TFT layer, the first metal is disposed at a position overlapping the projecting portion of the deposition substrate. A pattern is formed, and the first metal pattern is formed so as to overlap the frame region between the edge of the notch portion and the display area along the notch portion.
　本発明の一態様によれば、被成膜基板に第１金属パターンを形成して突出部の磁界を緩和し、ハウリングシートやカバーシートによりＦＭＭシートを安定して支持することができるため、成膜不良の発生を抑制することができる。 According to one aspect of the present invention, the first metal pattern is formed on the deposition target substrate to reduce the magnetic field of the protruding portion, and the FMM sheet can be stably supported by the howling sheet or the cover sheet. Occurrence of film defects can be suppressed.
表示デバイスの製造方法の一例を示すフローチャートである。It is a flowchart which shows an example of the manufacturing method of a display device. 表示デバイスの表示領域の構成例を示す断面図である。It is sectional drawing which shows the structural example of the display area of a display device. 実施形態１に係る蒸着装置の、被成膜基板に第１金属パターンが形成されている構成を示す分解斜視図である。It is a disassembled perspective view which shows the structure by which the 1st metal pattern is formed in the film-forming substrate of the vapor deposition apparatus which concerns on Embodiment 1. FIG. 実施形態１に係る蒸着マスクの構成を示す平面図である。It is a top view which shows the structure of the vapor deposition mask which concerns on Embodiment 1. FIG. 図５の（ａ）は、第１金属パターンが形成された完成デバイスの模式図であり、（ｂ）は（ａ）の蒸着時における対応領域をハウリングシートやカバーシートと共に示す模式図である。(A) of FIG. 5 is a schematic diagram of the completed device on which the first metal pattern is formed, and (b) is a schematic diagram showing a corresponding region at the time of vapor deposition of (a) together with a howling sheet and a cover sheet. 図５のノッチ部の端面近傍（額縁領域の一部）を示す断面図である。It is sectional drawing which shows the end surface vicinity (a part of frame area) of the notch part of FIG. 実施形態２に係る蒸着装置の、被成膜基板に第１金属パターンおよび第２金属パターンが形成されている構成を示す分解斜視図である。It is a disassembled perspective view which shows the structure by which the 1st metal pattern and the 2nd metal pattern are formed in the to-be-film-formed board | substrate of the vapor deposition apparatus which concerns on Embodiment 2. FIG. 図８の（ａ）は、第１金属パターンおよび第２金属パターンが形成された完成デバイスの模式図であり、（ｂ）は（ａ）の蒸着時の態様を示す模式図である。FIG. 8A is a schematic diagram of a completed device on which a first metal pattern and a second metal pattern are formed, and FIG. 8B is a schematic diagram showing an aspect during vapor deposition of FIG. 図８の変形例を示す模式図である。It is a schematic diagram which shows the modification of FIG.
　以下においては、「同層」とは同一のプロセス（成膜工程）にて形成されていることを意味し、「下層」とは、比較対象の層よりも先のプロセスで形成されていることを意味し、「上層」とは比較対象の層よりも後のプロセスで形成されていることを意味する。 In the following, “same layer” means formed in the same process (film formation step), and “lower layer” means formed in a process prior to the layer to be compared. The “upper layer” means that it is formed in a later process than the layer to be compared.
　図１はＥＬ表示装置２の製造方法の一例を示すフローチャートである。図２は、ＥＬ表示装置２の表示領域の構成を示す断面図である。 FIG. 1 is a flowchart showing an example of a method for manufacturing the EL display device 2. FIG. 2 is a cross-sectional view showing the configuration of the display area of the EL display device 2.
　フレキシブルなＥＬ表示装置２を製造する場合、図１および図２に示すように、まず、透光性の支持基板（例えば、マザーガラス）上に樹脂層１２を形成する（ステップＳ１）。次いで、バリア層３を形成する（ステップＳ２）。次いで、ＴＦＴ層４を形成する（ステップＳ３）。次いで、トップエミッション型の発光素子層５を形成する（ステップＳ４）。次いで、封止層６を形成する（ステップＳ５）。次いで、封止層６上に上面フィルムを貼り付ける（ステップＳ６）。 When manufacturing the flexible EL display device 2, as shown in FIGS. 1 and 2, first, a resin layer 12 is formed on a translucent support substrate (for example, mother glass) (step S1). Next, the barrier layer 3 is formed (step S2). Next, the TFT layer 4 is formed (step S3). Next, a top emission type light emitting element layer 5 is formed (step S4). Next, the sealing layer 6 is formed (step S5). Next, an upper surface film is pasted on the sealing layer 6 (step S6).
　次いで、レーザ光の照射等によって支持基板を樹脂層１２から剥離する（ステップＳ７）。次いで、樹脂層１２の下面に下面フィルム１０を貼り付ける（ステップＳ８）。次いで、下面フィルム１０、樹脂層１２、バリア層３、ＴＦＴ層４、発光素子層５、封止層６を含む積層体を分断し、複数の個片を得る（ステップＳ９）。次いで、得られた個片に機能フィルム３９を貼り付ける（ステップＳ１０）。次いで、複数のサブ画素が形成された表示領域よりも外側（非表示領域、額縁領域）の一部（端子部）に電子回路基板（例えば、ＩＣチップおよびＦＰＣ）をマウントする（ステップＳ１１）。なお、ステップＳ１～Ｓ１１は、表示デバイス製造装置（ステップＳ１～Ｓ５の各工程を行う成膜装置を含む）が行う。 Next, the support substrate is peeled off from the resin layer 12 by laser light irradiation or the like (step S7). Next, the lower film 10 is attached to the lower surface of the resin layer 12 (step S8). Next, the laminate including the lower film 10, the resin layer 12, the barrier layer 3, the TFT layer 4, the light emitting element layer 5, and the sealing layer 6 is divided to obtain a plurality of pieces (step S9). Subsequently, the functional film 39 is affixed on the obtained piece (step S10). Next, an electronic circuit board (for example, an IC chip and an FPC) is mounted on a part (terminal portion) of the outside (non-display area, frame area) of the display area where the plurality of sub-pixels are formed (step S11). Steps S1 to S11 are performed by a display device manufacturing apparatus (including a film forming apparatus that performs each step of steps S1 to S5).
　樹脂層１２の材料としては、例えばポリイミド等が挙げられる。樹脂層１２の部分を、二層の樹脂膜（例えば、ポリイミド膜）およびこれらに挟まれた無機絶縁膜で置き換えることもできる。 Examples of the material of the resin layer 12 include polyimide. The resin layer 12 may be replaced with a two-layer resin film (for example, a polyimide film) and an inorganic insulating film sandwiched between them.
　バリア層３は、水、酸素等の異物がＴＦＴ層４および発光素子層５に侵入することを防ぐ層であり、例えば、ＣＶＤ法により形成される、酸化シリコン膜、窒化シリコン膜、あるいは酸窒化シリコン膜、またはこれらの積層膜で構成することができる。 The barrier layer 3 is a layer that prevents foreign matters such as water and oxygen from entering the TFT layer 4 and the light emitting element layer 5. For example, a silicon oxide film, a silicon nitride film, or an oxynitride formed by a CVD method is used. A silicon film or a laminated film thereof can be used.
　ＴＦＴ層４は、半導体膜１５と、半導体膜１５よりも上層の無機絶縁膜１６（ゲート絶縁膜）と、無機絶縁膜１６よりも上層の、ゲート電極ＧＥおよびゲート配線ＧＨと、ゲート電極ＧＥおよびゲート配線ＧＨよりも上層の無機絶縁膜１８と、無機絶縁膜１８よりも上層の容量電極ＣＥと、容量電極ＣＥよりも上層の無機絶縁膜２０と、無機絶縁膜２０よりも上層のソース配線ＳＨと、ソース配線ＳＨよりも上層の平坦化膜２１（層間絶縁膜）とを含む。ここで、ゲート電極ＧＥおよびゲート配線ＧＨを含む層をゲートレイヤと呼称し、容量電極ＣＥおよび容量電極ＣＥと接続する不図示の容量配線を含む層を容量配線レイヤとも呼称し、ソース配線ＳＨを含む層をソースレイヤとも呼称する。 The TFT layer 4 includes a semiconductor film 15, an inorganic insulating film 16 (gate insulating film) above the semiconductor film 15, a gate electrode GE and a gate wiring GH above the inorganic insulating film 16, and a gate electrode GE and An inorganic insulating film 18 above the gate wiring GH, a capacitive electrode CE above the inorganic insulating film 18, an inorganic insulating film 20 above the capacitive electrode CE, and a source wiring SH above the inorganic insulating film 20 And a planarizing film 21 (interlayer insulating film) that is an upper layer than the source wiring SH. Here, the layer including the gate electrode GE and the gate wiring GH is referred to as a gate layer, the layer including the capacitor electrode CE and the capacitor wiring not shown connected to the capacitor electrode CE is also referred to as a capacitor wiring layer, and the source wiring SH is The containing layer is also called a source layer.
　半導体膜１５は、例えば低温ポリシリコン（ＬＴＰＳ）あるいは酸化物半導体（例えばＩｎ－Ｇａ－Ｚｎ－Ｏ系の半導体）で構成され、半導体膜１５およびゲート電極ＧＥを含むようにトランジスタ（ＴＦＴ）が構成される。図２では、トランジスタがトップゲート構造で示されているが、ボトムゲート構造でもよい。 The semiconductor film 15 is made of, for example, low-temperature polysilicon (LTPS) or an oxide semiconductor (for example, an In—Ga—Zn—O-based semiconductor), and a transistor (TFT) is formed so as to include the semiconductor film 15 and the gate electrode GE. Is done. In FIG. 2, the transistor is shown with a top gate structure, but may have a bottom gate structure.
　ゲート電極ＧＥ、ゲート配線ＧＨ、容量電極ＣＥ、不図示の容量配線、およびソース配線ＳＨは、例えば、アルミニウム、タングステン、モリブデン、タンタル、クロム、チタン、銅の少なくとも１つを含む金属の単層膜あるいは積層膜によって構成される。図２のＴＦＴ層４には、一層の半導体層および三層のメタル層が含まれる。 The gate electrode GE, the gate wiring GH, the capacitor electrode CE, the capacitor wiring (not shown), and the source wiring SH are, for example, a metal single layer film containing at least one of aluminum, tungsten, molybdenum, tantalum, chromium, titanium, and copper. Or it is comprised by a laminated film. The TFT layer 4 in FIG. 2 includes one semiconductor layer and three metal layers.
　無機絶縁膜１６・１８・２０は、例えば、ＣＶＤ法によって形成された、酸化シリコン（ＳｉＯｘ）膜あるいは窒化シリコン（ＳｉＮｘ）膜またはこれらの積層膜によって構成することができる。平坦化膜２１は、例えば、ポリイミド、アクリル等の塗布可能な有機材料によって構成することができる。 The inorganic insulating films 16, 18, and 20 can be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a stacked film thereof formed by a CVD method. The planarizing film 21 can be made of, for example, an applicable organic material such as polyimide or acrylic.
　発光素子層５は、平坦化膜２１よりも上層のアノード２２と、アノード２２のエッジを覆う絶縁性のアノードカバー膜（エッジカバー）２３と、アノードカバー膜２３よりも上層のＥＬ（エレクトロルミネッセンス）層２４と、ＥＬ層２４よりも上層のカソード２５とを含む。アノードカバー膜２３は、例えば、ポリイミド、アクリル等の有機材料を塗布した後にフォトリソグラフィよってパターニングすることで形成される。 The light emitting element layer 5 includes an anode 22 above the planarizing film 21, an insulating anode cover film (edge cover) 23 covering the edge of the anode 22, and an EL (electroluminescence) layer above the anode cover film 23. The layer 24 and the cathode 25 above the EL layer 24 are included. The anode cover film 23 is formed, for example, by applying an organic material such as polyimide or acrylic and then patterning by photolithography.
　サブ画素ごとに、島状のアノード２２、ＥＬ層２４、およびカソード２５を含む発光素子ＥＳ（例えば、ＯＬＥＤ：有機発光ダイオード，ＱＬＥＤ：量子ドットダイオード）が発光素子層５に形成され、発光素子ＥＳを制御するサブ画素回路がＴＦＴ層４に形成される。 For each subpixel, a light emitting element ES (for example, OLED: organic light emitting diode, QLED: quantum dot diode) including the island-shaped anode 22, EL layer 24, and cathode 25 is formed in the light emitting element layer 5, and the light emitting element ES A sub-pixel circuit for controlling is formed in the TFT layer 4.
　ＥＬ層２４は、例えば、下層側から順に、正孔注入層、正孔輸送層、発光層、電子輸送層、電子注入層を積層することで構成される。発光層は、蒸着法あるいはインクジェット法によって、アノードカバー膜２３の開口（サブ画素ごと）に、島状に形成される。他の層は、島状あるいはベタ状（共通層）に形成する。また、正孔注入層、正孔輸送層、電子輸送層、電子注入層のうち１以上の層を形成しない構成も可能である。 The EL layer 24 is configured, for example, by laminating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in order from the lower layer side. The light emitting layer is formed in an island shape in the opening (for each subpixel) of the anode cover film 23 by a vapor deposition method or an ink jet method. The other layers are formed in an island shape or a solid shape (common layer). Moreover, the structure which does not form one or more layers among a positive hole injection layer, a positive hole transport layer, an electron carrying layer, and an electron injection layer is also possible.
　ＯＬＥＤの発光層を蒸着形成する場合は、蒸着マスクを用いる。蒸着マスクは、多数の開口部を有するシート状のＦＭＭ（ファインメタルマスク）シートを含む。ＦＭＭシートは（例えば、インバー材製）であり、１つの開口部を通過した有機物質によって島状の発光層（１つのサブ画素に対応）が形成される。 When vapor-depositing the light emitting layer of the OLED, a vapor deposition mask is used. The vapor deposition mask includes a sheet-like FMM (fine metal mask) sheet having a large number of openings. The FMM sheet is made of, for example, Invar, and an island-like light emitting layer (corresponding to one subpixel) is formed by an organic material that has passed through one opening.
　ＱＬＥＤの発光層は、例えば、量子ドットを拡散させた溶媒をインクジェット塗布することで、島状の発光層（１つのサブ画素に対応）を形成することができる。 The light emitting layer of the QLED can form an island-shaped light emitting layer (corresponding to one subpixel) by, for example, applying a solvent in which quantum dots are diffused by inkjet.
　アノード（陽極）２２は、例えばＩＴＯ（Indium Tin Oxide）とＡｇ（銀）あるいはＡｇを含む合金との積層によって構成され、光反射性を有する。カソード（陰極）２５は、ＭｇＡｇ合金（極薄膜）、ＩＴＯ、ＩＺＯ（Indium zinc Oxide）等の透光性の導電材で構成することができる。 The anode 22 is composed of, for example, a laminate of ITO (IndiumＩＴＯTin Oxide) and Ag (silver) or an alloy containing Ag, and has light reflectivity. The cathode (cathode) 25 can be made of a light-transmitting conductive material such as MgAg alloy (ultra-thin film), ITO, or IZO (Indium zinc Oxide).
　発光素子ＥＳがＯＬＥＤである場合、アノード２２およびカソード２５間の駆動電流によって正孔と電子が発光層内で再結合し、これによって生じたエキシトンが基底状態に遷移する過程で光が放出される。カソード２５が透光性であり、アノード２２が光反射性であるため、ＥＬ層２４から放出された光は上方に向かい、トップエミッションとなる。 When the light-emitting element ES is an OLED, holes and electrons are recombined in the light-emitting layer by the driving current between the anode 22 and the cathode 25, and light is emitted in the process in which the excitons generated thereby transition to the ground state. . Since the cathode 25 is light-transmitting and the anode 22 is light-reflective, the light emitted from the EL layer 24 is directed upward and becomes top emission.
　発光素子ＥＳがＱＬＥＤである場合、アノード２２およびカソード２５間の駆動電流によって正孔と電子が発光層内で再結合し、これによって生じたエキシトンが、量子ドットの伝導帯準位（conduction band）から価電子帯準位（valence band）に遷移する過程で光（蛍光）が放出される。 When the light-emitting element ES is a QLED, holes and electrons are recombined in the light-emitting layer due to the drive current between the anode 22 and the cathode 25, and the excitons generated thereby are conduction band levels of the quantum dots. Light (fluorescence) is emitted in the process of transition from valence band level to valence band.
　発光素子層５には、前記のＯＬＥＤ、ＱＬＥＤ以外の発光素子（無機発光ダイオード等）を形成してもよい。 In the light emitting element layer 5, a light emitting element (inorganic light emitting diode or the like) other than the OLED and QLED may be formed.
　封止層６は透光性であり、カソード２５を覆う無機封止膜２６と、無機封止膜２６よりも上層の有機バッファ膜２７と、有機バッファ膜２７よりも上層の無機封止膜２８とを含む。発光素子層５を覆う封止層６は、水、酸素等の異物の発光素子層５への浸透を防いでいる。 The sealing layer 6 is translucent, and includes an inorganic sealing film 26 that covers the cathode 25, an organic buffer film 27 that is above the inorganic sealing film 26, and an inorganic sealing film 28 that is above the organic buffer film 27. Including. The sealing layer 6 covering the light emitting element layer 5 prevents penetration of foreign substances such as water and oxygen into the light emitting element layer 5.
　無機封止膜２６および無機封止膜２８はそれぞれ無機絶縁膜であり、例えば、ＣＶＤ法により形成される、酸化シリコン膜、窒化シリコン膜、あるいは酸窒化シリコン膜、またはこれらの積層膜で構成することができる。有機バッファ膜２７は、平坦化効果のある透光性有機膜であり、アクリル等の塗布可能な有機材料によって構成することができる。有機バッファ膜２７は例えばインクジェット塗布によって形成することができるが、液滴を止めるためのバンクＢＫを非表示領域に設けてもよい。 Each of the inorganic sealing film 26 and the inorganic sealing film 28 is an inorganic insulating film, and is formed of, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a laminated film thereof formed by a CVD method. be able to. The organic buffer film 27 is a light-transmitting organic film having a flattening effect, and can be made of a coatable organic material such as acrylic. The organic buffer film 27 can be formed by, for example, inkjet coating, but a bank BK for stopping the liquid droplets may be provided in the non-display area.
　下面フィルム１０は、支持基板を剥離した後に樹脂層１２の下面に貼り付けることで柔軟性に優れたＥＬ表示装置２を実現するための、例えばＰＥＴフィルムである。機能フィルム３９は、例えば、光学補償機能、タッチセンサ機能、保護機能の少なくとも１つを有する。 The lower film 10 is, for example, a PET film for realizing the EL display device 2 having excellent flexibility by being attached to the lower surface of the resin layer 12 after peeling off the support substrate. The functional film 39 has, for example, at least one of an optical compensation function, a touch sensor function, and a protection function.
　以上にフレキシブルなＥＬ表示装置２について説明したが、非フレキシブルなＥＬ表示装置２を製造する場合は、一般的に樹脂層の形成、基材の付け替え等が不要であるため、例えば、ガラス基板上にステップＳ２～Ｓ５の積層工程を行い、その後ステップＳ９に移行する。 Although the flexible EL display device 2 has been described above, when a non-flexible EL display device 2 is manufactured, it is generally unnecessary to form a resin layer, change a base material, or the like. Then, the stacking process of steps S2 to S5 is performed, and then the process proceeds to step S9.
　〔実施形態１〕
　本発明の実施形態１について図３～図６に基づいて説明すれば以下の通りである。 Embodiment 1
Embodiment 1 of the present invention will be described below with reference to FIGS.
　図３は、実施形態１に係る蒸着装置１００の、被成膜基板１１０に第１金属パターン１１１が形成されている構成を示す分解斜視図である。図４は、実施形態１に係る蒸着マスク１２５の構成を示す平面図である。図５の（ａ）は、第１金属パターン１１１が形成された完成デバイス７の模式図であり、（ｂ）は（ａ）の蒸着時における対応領域をハウリングシートやカバーシートと共に示す模式図である。図６は、図５のノッチ部９の端面近傍（額縁領域７ｂの一部）を示す断面図である。 FIG. 3 is an exploded perspective view showing a configuration in which the first metal pattern 111 is formed on the deposition target substrate 110 of the vapor deposition apparatus 100 according to the first embodiment. FIG. 4 is a plan view showing the configuration of the vapor deposition mask 125 according to the first embodiment. FIG. 5A is a schematic diagram of the completed device 7 on which the first metal pattern 111 is formed, and FIG. 5B is a schematic diagram showing a corresponding region at the time of vapor deposition of FIG. 5A together with a howling sheet and a cover sheet. is there. FIG. 6 is a cross-sectional view showing the vicinity of the end face of the notch portion 9 in FIG. 5 (a part of the frame region 7b).
　（蒸着装置の概略構成）
　蒸着装置１００は、被成膜基板１１０の成膜エリアに不図示の蒸着材料からなる蒸着膜を成膜するための装置である。なお、本実施形態では、蒸着膜として、ＥＬ表示装置２の発光素子層５を形成する場合を例に挙げて説明する。 (Schematic configuration of vapor deposition equipment)
The vapor deposition apparatus 100 is an apparatus for forming a vapor deposition film made of a vapor deposition material (not shown) in a film formation area of the deposition target substrate 110. In the present embodiment, a case where the light emitting element layer 5 of the EL display device 2 is formed as a vapor deposition film will be described as an example.
　蒸着装置１００は、蒸着マスク１２５と、マグネットプレート１２１と、不図示の蒸着源とを含み、これらが、不図示の回転機構、防着板、シャッタなどを備える成膜チャンバ内に収められて構成されている。なお、成膜チャンバには、図示は省略するが、当該成膜チャンバ内を真空状態に保つための真空ポンプや排気口などが設けられている。 The vapor deposition apparatus 100 includes a vapor deposition mask 125, a magnet plate 121, and a vapor deposition source (not shown), and these are housed in a film formation chamber including a rotation mechanism (not shown), a deposition plate, a shutter, and the like. Has been. Note that, although not illustrated, the film formation chamber is provided with a vacuum pump, an exhaust port, and the like for keeping the inside of the film formation chamber in a vacuum state.
　蒸着マスク１２５は、被成膜基板１１０の成膜エリアに不図示の蒸着材料からなる蒸着膜を成膜するためのマスクである。蒸着マスク１２５は、磁性体によって形成され、被成膜基板１１０の成膜エリア側に密着配置される。蒸着マスク１２５は、被成膜基板１１０の成膜エリアとは反対側の面に設けられたマグネットプレート１２１の磁力によって、被成膜基板１１０の成膜エリア側に吸着され、被成膜基板１１０に密着するように構成されている。 The vapor deposition mask 125 is a mask for forming a vapor deposition film made of a vapor deposition material (not shown) in a film formation area of the deposition target substrate 110. The vapor deposition mask 125 is formed of a magnetic material and is in close contact with the film formation area side of the film formation substrate 110. The vapor deposition mask 125 is attracted to the film formation area side of the film formation substrate 110 by the magnetic force of the magnet plate 121 provided on the surface opposite to the film formation area of the film formation substrate 110, and is formed. It is comprised so that it may closely_contact | adhere.
　不図示の蒸着源は、蒸着材料を収容する容器であり、蒸着材料を加熱して蒸発または昇華させることで気体状の蒸着粒子を発生させる。蒸着源は、発生させた気体状の蒸着粒子を、被成膜基板１１０の成膜エリアに向かって射出する。被成膜基板１１０の成膜エリア１１１に向かって射出された蒸着粒子は、蒸着マスク１２５の開口領域１２６ａを通過して、開口領域１２６ａに対応する形状の発光層が成膜エリアに形成される。 A vapor deposition source (not shown) is a container for accommodating a vapor deposition material, and generates vapor deposition particles in a gaseous state by heating or evaporating or sublimating the vapor deposition material. The vapor deposition source injects the generated gaseous vapor deposition particles toward the deposition area of the deposition target substrate 110. The vapor deposition particles injected toward the film formation area 111 of the film formation substrate 110 pass through the opening region 126a of the vapor deposition mask 125, and a light emitting layer having a shape corresponding to the opening region 126a is formed in the film formation area. .
　また、本実施形態では、マグネットプレート１２１と被成膜基板１１０との間にタッチセンサなどを備えるタッチプレート１２２が配置される。 In this embodiment, a touch plate 122 including a touch sensor is disposed between the magnet plate 121 and the deposition target substrate 110.
　（蒸着マスクの概略構成）
　図３～図４に示すように、蒸着マスク１２５は、少なくともＦＭＭシート１２６、ハウリングシート１２７、カバーシート１３１、及びフレーム１３０を含んでいる。 (Schematic configuration of the evaporation mask)
As shown in FIGS. 3 to 4, the deposition mask 125 includes at least an FMM sheet 126, a howling sheet 127, a cover sheet 131, and a frame 130.
　ＦＭＭシート１２６は、複数の開口領域１２６ａを有している。ＦＭＭシート１２６は、細長形状のシートであり、開口領域１２６ａが長手方向に複数並べて設けられている。開口領域１２６ａは、レーザ加工等によってＦＭＭシート１２６に位置精度良く形成される。 The FMM sheet 126 has a plurality of opening regions 126a. The FMM sheet 126 is an elongated sheet, and a plurality of opening regions 126a are arranged in the longitudinal direction. The opening region 126a is formed in the FMM sheet 126 with high positional accuracy by laser processing or the like.
　ＦＭＭシート１２６は、例えば、鉄、ニッケル、インバー（鉄－ニッケル合金）、ＳＵＳ４３０等の、磁性を有する磁性金属から形成されている。なお、これらの磁性金属の中でも熱による変形が少ない鉄－ニッケル合金であるインバーを好適に用いることができる。このように、ＦＭＭシート１２６は、磁性金属から形成されているため、マグネットプレート１２１の磁力によって、被成膜基板１１０に密着配置される。 The FMM sheet 126 is formed of a magnetic metal having magnetism such as iron, nickel, invar (iron-nickel alloy), SUS430, or the like. Of these magnetic metals, invar, which is an iron-nickel alloy that is hardly deformed by heat, can be preferably used. As described above, since the FMM sheet 126 is formed of a magnetic metal, the FMM sheet 126 is closely attached to the deposition target substrate 110 by the magnetic force of the magnet plate 121.
　ハウリングシート１２７は、各ＦＭＭシート１２６の長手方向に対して垂直な方向に延びるように配置される。ハウリングシート１２７は、複数のＦＭＭシート１２６を互いに平行に並べた並び方向に亘って延びるとともに、ＦＭＭシート１２６の長手方向に複数並べられている。ハウリングシート１２７は、開口領域１２６ａの縁に沿って並べられているのが好ましい。 The howling sheet 127 is disposed so as to extend in a direction perpendicular to the longitudinal direction of each FMM sheet 126. The howling sheets 127 extend in the arrangement direction in which a plurality of FMM sheets 126 are arranged in parallel to each other, and a plurality of howling sheets 127 are arranged in the longitudinal direction of the FMM sheets 126. The howling sheets 127 are preferably arranged along the edge of the opening region 126a.
　ハウリングシート１２７は、細長形状のＦＭＭシート１２６の自重を受ける梁の機能を備え、ＦＭＭシート１２６が自重により弛むのを防いでいる。また、ハウリングシート１２７は、例えば、鉄、ニッケル、インバー（鉄－ニッケル合金）、ＳＵＳ４３０等の、磁性を有する磁性金属から形成されている。このように、ハウリングシート１２７は磁性金属から形成されているため、マグネットプレート１２１の磁力によって、被成膜基板１１０側に吸着され、ＦＭＭシート１２６を被成膜基板１１０に対して押さえる。 The howling sheet 127 has a function of a beam that receives the weight of the elongated FMM sheet 126 and prevents the FMM sheet 126 from being loosened by its own weight. The howling sheet 127 is made of a magnetic metal having magnetism such as iron, nickel, invar (iron-nickel alloy), SUS430, or the like. As described above, the howling sheet 127 is made of a magnetic metal, so that it is attracted to the film formation substrate 110 side by the magnetic force of the magnet plate 121 and presses the FMM sheet 126 against the film formation substrate 110.
　カバーシート１３１は、短手方向に互いに平行に複数並べられているＦＭＭシート１２６間の隙間を塞ぐ。カバーシート１３１は、磁性を有する磁性金属から形成され、例えば、鉄、ニッケル、インバー（鉄－ニッケル合金）、ＳＵＳ４３０等よって形成されているのが望ましい。カバーシート１３１は、マグネットプレート１２１の磁力によって、被成膜基板１１０側に吸着される。 The cover sheet 131 closes gaps between the FMM sheets 126 arranged in parallel in the short direction. The cover sheet 131 is formed of a magnetic metal having magnetism, and is preferably formed of, for example, iron, nickel, invar (iron-nickel alloy), SUS430, or the like. The cover sheet 131 is attracted to the film formation substrate 110 side by the magnetic force of the magnet plate 121.
　フレーム１３０は、被成膜基板１１０に近い側から順に並べられたＦＭＭシート１２６、ハウリングシート１２７、及びカバーシート１３１を保持する。フレーム１３０は、磁性を有する磁性金属から形成され、例えば、鉄、ニッケル、インバー（鉄－ニッケル合金）、ＳＵＳ４３０等よって形成されているのが望ましい。 The frame 130 holds the FMM sheet 126, the howling sheet 127, and the cover sheet 131 arranged in order from the side close to the deposition target substrate 110. The frame 130 is formed of magnetic metal having magnetism, and is preferably formed of, for example, iron, nickel, invar (iron-nickel alloy), SUS430, or the like.
　（ノッチ部を有する表示デバイス）
　図５に例示のように、ＥＬ表示装置２の完成デバイス７には、表示エリア（蒸着エリア）８に、ノッチ部９が形成されている。ノッチ部９は、ノッチ加工を行う断面に蒸着膜があると水分や酸素によって劣化する。このため、ノッチ部９は、端面をバリア膜等で封止する必要がある。よって、蒸着工程においては、ノッチ部９は、当該ノッチ部９に蒸着材料が蒸着されないようにカバーする必要がある。また、図５の（ａ）では、符号７ａは完成デバイス７のパネルの外縁であるパネルエッジを指し、符号７ｂはパネルエッジと表示エリアとの間に設けられた額縁領域（非表示エリア）を指す。図５の（ｂ）では、符号７’ａは分断エッジを指し、符号７’ｂは額縁対応ゾーンを指し、符号８’は蒸着エリアを指す。ここで、分断エッジ７’ａは、図５の（ａ）におけるパネルエッジに対応する境界であって、分断前の境界のことを指し、額縁対応ゾーン符号７’ｂは、図５の（ａ）における額縁領域７ｂに対応する領域のことを指し、蒸着エリア８’は、図５の（ａ）における表示エリア８に対応する領域のことを指す。 (Display device with notch)
As illustrated in FIG. 5, the notched portion 9 is formed in the display area (evaporation area) 8 in the completed device 7 of the EL display device 2. The notch portion 9 is deteriorated by moisture or oxygen if a vapor deposition film is present on the cross section where notching is performed. For this reason, it is necessary to seal the end surface of the notch portion 9 with a barrier film or the like. Therefore, in the vapor deposition step, the notch portion 9 needs to cover the vapor deposition material so that the vapor deposition material is not deposited on the notch portion 9. In FIG. 5A, reference numeral 7a indicates a panel edge that is an outer edge of the panel of the completed device 7, and reference numeral 7b indicates a frame area (non-display area) provided between the panel edge and the display area. Point to. In FIG. 5B, reference numeral 7′a indicates a split edge, reference numeral 7′b indicates a frame corresponding zone, and reference numeral 8 ′ indicates a vapor deposition area. Here, the dividing edge 7′a is a boundary corresponding to the panel edge in FIG. 5A, and indicates the boundary before dividing. The frame corresponding zone code 7′b is shown in FIG. ) Indicates a region corresponding to the frame region 7b, and the vapor deposition area 8 ′ indicates a region corresponding to the display area 8 in FIG.
　図３～図５に例示するように、ハウリングシート１２７は、直線状部１２７ｂと、ノッチ部９に対応するように直線状部１２７ｂから突出する突出部１２７ａを備え、上述したＴＦＴ層４を形成する工程（ステップＳ３）では、被成膜基板１１０の、突出部１２７ａと重畳する位置に第１金属パターン１１１が形成されている。突出部１２７ａは、完成デバイス７の表示エリア８に設けられたノッチ部９に対応する形状を有している。突出部１２７ａは、ＦＭＭシート１２６の開口領域１２６ａにおいて、ノッチ部９に対応する部分を覆うことにより、ノッチ部９への成膜を妨げる。 As illustrated in FIGS. 3 to 5, the howling sheet 127 includes a linear portion 127 b and a protruding portion 127 a that protrudes from the linear portion 127 b so as to correspond to the notch portion 9, and forms the TFT layer 4 described above. In the step of performing (step S3), the first metal pattern 111 is formed on the deposition target substrate 110 at a position overlapping the protruding portion 127a. The protruding portion 127 a has a shape corresponding to the notch portion 9 provided in the display area 8 of the completed device 7. The protruding portion 127 a covers the portion corresponding to the notch portion 9 in the opening region 126 a of the FMM sheet 126, thereby preventing film formation on the notch portion 9.
　また、図３～図５では、１つの長方形形状のハウリングシート１２７は２つの略矩形形状の突出部１２７ａを備える構成を例示したが、本実施形態はこれらに限定されず、製品の寸法や形状などに応じて適宜変更することができる。 3 to 5 exemplify a configuration in which one rectangular howling sheet 127 includes two substantially rectangular protrusions 127a. However, the present embodiment is not limited thereto, and the dimensions and shapes of the products are not limited thereto. It can change suitably according to etc.
　また、図３～図５では、ハウリングシート１２７は直線状部１２７ｂと突出部１２７ａとを備え、突出部１２７ａ重畳する位置に第１金属パターン１１１が形成されている構成を例示したが、これは本実施形態を限定するものではない。例えば表示デバイスの各辺のうち、カバーシート１３１に沿った辺にノッチ部が形成されている場合、換言すれば、ＦＭＭシートの架張方向に沿った辺にノッチ部が形成されている場合には、カバーシート１３１が直線状部と突出部とを備え、当該突出部と重畳する位置に第１金属パターン１１１を形成する構成としてもよい。 3 to 5, the howling sheet 127 includes the linear portion 127b and the protruding portion 127a, and the first metal pattern 111 is formed at the position where the protruding portion 127a overlaps. This embodiment is not limited. For example, when notches are formed on the sides along the cover sheet 131 among the sides of the display device, in other words, when notches are formed on the sides along the extending direction of the FMM sheet. The cover sheet 131 may include a linear portion and a protruding portion, and the first metal pattern 111 may be formed at a position overlapping the protruding portion.
　図６に示すように、額縁領域７ｂでは、ソース配線ＳＨ（図６）と同層の低電源電圧幹配線ＭＬと、アノード２２（図６）と同層の中継配線ＬＷとが接続部ＳＢにてコンタクトする。接触部ＳＢでは、平坦化膜２１およびエッジカバー２３（図６）と同層の有機絶縁膜２３ｙが貫かれている。トレンチＴＣでは、平坦化膜２１および有機絶縁膜２３ｙが貫かれており、カソード２５と中継配線ＬＷとがコンタクトする。トレンチＴＣは水分浸透を断ち切る機能も有する。バンクＢＫ１（有機絶縁膜２３ｙで構成される）およびバンクＢＫ２（平坦化膜２１および有機絶縁膜２３ｙで構成される）は液滴止めとして機能する。第１金属パターン１１１は、バンクＢＫ１・ＢＫ２およびトレンチＴＣと重なるように配される。 As shown in FIG. 6, in the frame region 7b, the low power supply voltage trunk line ML in the same layer as the source line SH (FIG. 6), and the relay line LW in the same layer as the anode 22 (FIG. 6) are connected to the connection portion SB. Contact. In the contact portion SB, the organic insulating film 23y of the same layer as the planarizing film 21 and the edge cover 23 (FIG. 6) is penetrated. In the trench TC, the planarizing film 21 and the organic insulating film 23y are penetrated, and the cathode 25 and the relay wiring LW are in contact with each other. The trench TC also has a function of cutting off moisture penetration. Bank BK1 (consisting of organic insulating film 23y) and bank BK2 (comprising planarizing film 21 and organic insulating film 23y) function as a droplet stopper. The first metal pattern 111 is arranged so as to overlap the banks BK1 and BK2 and the trench TC.
　上記構成によれば、被成膜基板１１０に第１金属パターン１１１を形成してマグネットプレート１２１の磁力による突出部１２７ａへの磁界を緩和し、ハウリングシート１２７やカバーシート１３１によりＦＭＭシート１２６を安定して支持することができるため、成膜不良の発生を抑制することができる。この結果、ノッチ部９を有する表示デバイスであっても、ハウリングシート１２７やカバーシート１３１によりＦＭＭシート１２６を安定して支持することができる。 According to the above configuration, the first metal pattern 111 is formed on the deposition target substrate 110 to relieve the magnetic field to the protrusion 127a due to the magnetic force of the magnet plate 121, and the FMM sheet 126 is stabilized by the howling sheet 127 and the cover sheet 131. Therefore, it is possible to suppress the occurrence of film formation defects. As a result, even in the display device having the notch portion 9, the FMM sheet 126 can be stably supported by the howling sheet 127 and the cover sheet 131.
　また、図５に示すように、第１金属パターン１１１は、ノッチ部９に沿うように、ノッチ部９の縁と表示エリア８との間の額縁領域７ｂに重畳して形成されている。この構成によれば、第１金属パターン１１１は、額縁領域に重畳して形成されているため、ノッチ部９に成膜してしまうことを有効に抑制することができる。 Further, as shown in FIG. 5, the first metal pattern 111 is formed so as to overlap the frame region 7 b between the edge of the notch portion 9 and the display area 8 along the notch portion 9. According to this configuration, since the first metal pattern 111 is formed so as to overlap the frame region, it is possible to effectively suppress film formation on the notch portion 9.
　上述したＴＦＴ層４を形成する工程（ステップＳ３）は、複数の金属層を形成する工程と、上記複数の金属層の間に挟まれるように絶縁膜を形成する工程とを含み、第１金属パターン１１１は、上記複数の金属層が積層して形成される。また、第１金属パターン１１１において、上記複数の金属層の間に上記絶縁膜が挟まれていてもよい。 The step of forming the TFT layer 4 (step S3) includes a step of forming a plurality of metal layers and a step of forming an insulating film so as to be sandwiched between the plurality of metal layers. The pattern 111 is formed by laminating the plurality of metal layers. In the first metal pattern 111, the insulating film may be sandwiched between the plurality of metal layers.
　この構成によれば、第１金属パターン１１１は複数層構成となるため、第１金属パターン１１１による突出部１２７ａの磁界をさらに緩和し、ハウリングシート１２７によりＦＭＭシート１２６をより安定して支持することができる。 According to this configuration, since the first metal pattern 111 has a multi-layer configuration, the magnetic field of the protrusion 127a caused by the first metal pattern 111 is further relaxed, and the FMM sheet 126 is more stably supported by the howling sheet 127. Can do.
　また、第１金属パターン１１１は、上記ゲートレイヤ、上記容量配線レイヤ、および上記ソースレイヤの何れか１つであってもよい。この構成によれば、第１金属パターン１１１に汎用性を付与することができる。 Further, the first metal pattern 111 may be any one of the gate layer, the capacitor wiring layer, and the source layer. According to this configuration, versatility can be imparted to the first metal pattern 111.
　また、第１金属パターン１１１は、磁化されることが可能な磁性金属により構成されることが好ましい。この構成によれば、マグネットプレート１２１の磁力による突出部１２７ａへの磁界を効果的に緩和し、ハウリングシート１２７によりＦＭＭシート１２６をより安定して支持することができる。 The first metal pattern 111 is preferably made of a magnetic metal that can be magnetized. According to this configuration, the magnetic field to the protrusion 127a due to the magnetic force of the magnet plate 121 can be effectively reduced, and the FMM sheet 126 can be supported more stably by the howling sheet 127.
　（実施形態１の変形例）
　以上、実施形態１の構成を説明したが、本実施形態はこれらに限定されず、第１金属パターン１１１についてさらに適宜変更することができる。 (Modification of Embodiment 1)
As mentioned above, although the structure of Embodiment 1 was demonstrated, this embodiment is not limited to these, The 1st metal pattern 111 can be changed further suitably.
　マグネットプレート１２１の磁力による突出部１２７ａへの磁界の緩和量について、例えば、第１金属パターン１１１の形成面積、第１金属パターン１１１と突出部１２７ａとの重畳面積、第１金属パターン１１１にメッシュ構成の使用、または第１金属パターン１１１の厚さ調整により適宜設計変更することによって調整することができる。 Regarding the amount of relaxation of the magnetic field to the protrusion 127a due to the magnetic force of the magnet plate 121, for example, the formation area of the first metal pattern 111, the overlapping area of the first metal pattern 111 and the protrusion 127a, and the first metal pattern 111 in a mesh configuration It is possible to make adjustments by appropriately changing the design by using the above or by adjusting the thickness of the first metal pattern 111.
　その一例として、例えば第１金属パターン１１１は、上記突出部１２７ａの全ての領域と重畳する構成が挙げられる。上記各々の方法を用いた構成によれば、マグネットプレート１２１の磁力による突出部１２７ａへの磁界の緩和量を好適に調整することができる。 As an example, for example, the first metal pattern 111 may be configured to overlap with the entire region of the protrusion 127a. According to the configuration using each of the above methods, the amount of relaxation of the magnetic field applied to the protrusion 127a by the magnetic force of the magnet plate 121 can be suitably adjusted.
　〔実施形態２〕
　本発明の実施形態２について、以下に説明する。なお、説明の便宜上、上記実施形態１にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を繰り返さない。本実施形態と上記実施形態１との主な相違点は本実施形態では被成膜基板１１０にさらに第２金属パターンを形成することにある。以下、図７～図９を参照して上記相違点を中心的に説明する。 [Embodiment 2]
Embodiment 2 of the present invention will be described below. For convenience of explanation, members having the same functions as those described in the first embodiment are given the same reference numerals, and the description thereof will not be repeated. The main difference between the present embodiment and the first embodiment is that a second metal pattern is further formed on the deposition target substrate 110 in the present embodiment. The above differences will be mainly described below with reference to FIGS.
　図７は、本実施形態に係る蒸着装置１００ａの、被成膜基板１１０に第１金属パターン１１１および第２金属パターン１１２が形成されている構成を示す分解斜視図である。図８の（ａ）は、第１金属パターン１１１および第２金属パターン１１２が形成された完成デバイスの模式図であり、（ｂ）は（ａ）の蒸着時の態様を示す模式図である。図９は、図８の変形例を示す模式図である。 FIG. 7 is an exploded perspective view showing a configuration in which the first metal pattern 111 and the second metal pattern 112 are formed on the deposition target substrate 110 of the vapor deposition apparatus 100a according to the present embodiment. FIG. 8A is a schematic diagram of a completed device in which the first metal pattern 111 and the second metal pattern 112 are formed, and FIG. 8B is a schematic diagram showing an aspect during vapor deposition of FIG. FIG. 9 is a schematic diagram showing a modification of FIG.
　（蒸着装置１００ａの概略構成）
　図７に示すように、本実施形態では、蒸着装置１００ａは、蒸着マスク１２５と、マグネットプレート１２１と、不図示の蒸着源とを含む。また、蒸着マスク１２５は、少なくともＦＭＭシート１２６、ハウリングシート１２７、及びカバーシート１３１を含んでいる。ハウリングシート１２７が直線状部１２７ｂを備える。蒸着粒子が蒸着される被成膜基板１１０aの、直線状部１２７ｂに重畳する位置に第２金属パターン１１２が形成されている。 (Schematic configuration of the vapor deposition apparatus 100a)
As shown in FIG. 7, in this embodiment, the vapor deposition apparatus 100a includes a vapor deposition mask 125, a magnet plate 121, and a vapor deposition source (not shown). The vapor deposition mask 125 includes at least an FMM sheet 126, a howling sheet 127, and a cover sheet 131. The howling sheet 127 includes a linear portion 127b. A second metal pattern 112 is formed at a position overlapping the linear portion 127b of the deposition target substrate 110a on which the vapor deposition particles are deposited.
　上記構成によれば、上記実施形態１が奏する効果を奏することができる。 According to the above configuration, the effect of the first embodiment can be achieved.
　また、上記構成では、ハウリングシート１２７は直線状部１２７ｂを備え、被成膜基板１１０aの、直線状部１２７ｂに重畳する位置に第２金属パターン１１２が形成されている構成を例示したが、これは本実施形態を限定するものではない。例えば表示デバイスの各辺のうち、カバーシート１３１に沿った辺にノッチ部が形成されている場合、換言すれば、ＦＭＭシートの架張方向に沿った辺にノッチ部が形成されている場合には、カバーシート１３１が直線状部を備え、被成膜基板の、当該直線状部に重畳する位置に第２金属パターン１１２を形成する構成としてもよい。 In the above configuration, the howling sheet 127 includes the linear portion 127b, and the second metal pattern 112 is formed at a position overlapping the linear portion 127b of the deposition target substrate 110a. Does not limit the present embodiment. For example, when notches are formed on the sides along the cover sheet 131 among the sides of the display device, in other words, when notches are formed on the sides along the extending direction of the FMM sheet. The cover sheet 131 may include a linear portion, and the second metal pattern 112 may be formed on the deposition target substrate at a position overlapping the linear portion.
　また、第２金属パターン１１２の厚さは、第１金属パターン１１１の厚さよりも薄い。このように、第２金属パターン１１２の厚さは、第１金属パターン１１１の厚さよりも薄いので、ハウリングシート１２７全体に作用する磁界の均一化を図ることができる。この結果、ハウリングシート１２７によりＦＭＭシート１２６を安定して支持し、成膜不良の発生を抑制することができる。 In addition, the thickness of the second metal pattern 112 is thinner than the thickness of the first metal pattern 111. As described above, since the thickness of the second metal pattern 112 is thinner than the thickness of the first metal pattern 111, the magnetic field acting on the entire howling sheet 127 can be made uniform. As a result, the FMM sheet 126 can be stably supported by the howling sheet 127, and the occurrence of film formation defects can be suppressed.
　また、上記実施形態１における第１金属パターン１１１のように、第２金属パターン１１２は、ゲートレイヤ、容量配線レイヤ、およびソースレイヤの何れか１つである。この構成によれば、第２金属パターン１１２に汎用性を付与することができる。 Further, like the first metal pattern 111 in the first embodiment, the second metal pattern 112 is any one of a gate layer, a capacitor wiring layer, and a source layer. According to this configuration, versatility can be imparted to the second metal pattern 112.
　なお、上記実施形態１における第１金属パターン１１１のように、第２金属パターン１１２は、磁化されることが可能な磁性金属により構成されることが好ましい。 In addition, like the 1st metal pattern 111 in the said Embodiment 1, it is preferable that the 2nd metal pattern 112 is comprised with the magnetic metal which can be magnetized.
　（実施形態２の変形例）
　以上、実施形態２の構成を説明したが、本実施形態はこれらに限定されず、上記実施形態１における第１金属パターンのように、本実施形態の第２金属パターン１１２についてもさらに適宜変更することができる。 (Modification of Embodiment 2)
The configuration of the second embodiment has been described above. However, the present embodiment is not limited to these, and the second metal pattern 112 of the present embodiment is further appropriately changed like the first metal pattern in the first embodiment. be able to.
　例えば、ハウリングシート１２７全体に作用する磁界の均一化を図るため、本実施形態では第２金属パターン１１２の厚さを、第１金属パターン１１１の厚さよりも薄く形成する構成を例示したが、本実施形態はこれに限定されず、例えば図９に示すように、第２金属パターン１１２ａには、少なくとも一つの開口１１２ａ１が形成されていてもよい。この構成によれば、第２金属パターンの厚さ調整をせずにハウリングシート１２７全体に作用する磁界の均一化を図ることができる。 For example, in order to make the magnetic field acting on the entire howling sheet 127 uniform, the present embodiment exemplifies a configuration in which the thickness of the second metal pattern 112 is made thinner than the thickness of the first metal pattern 111. The embodiment is not limited to this. For example, as shown in FIG. 9, at least one opening 112a1 may be formed in the second metal pattern 112a. According to this configuration, it is possible to make the magnetic field acting on the entire howling sheet 127 uniform without adjusting the thickness of the second metal pattern.
　〔まとめ〕
　本実施形態に係る表示デバイスが備える電気光学素子（電流によって輝度や透過率が制御される電気光学素子）は特に限定されるものではない。本実施形態に係る表示デバイスとしては、例えば、電気光学素子としてＯＬＥＤ（Organic Light Emitting Diode：有機発光ダイオード）を備えた有機ＥＬ（Electro Luminescence：エレクトロルミネッセンス）ディスプレイ、電気光学素子として無機発光ダイオードを備えた無機ＥＬディスプレイ、電気光学素子としてＱＬＥＤ（Quantum dot Light Emitting Diode：量子ドット発光ダイオード）を備えたＱＬＥＤディスプレイ等が挙げられる。 [Summary]
The electro-optical element (electro-optical element whose luminance and transmittance are controlled by current) included in the display device according to the present embodiment is not particularly limited. As a display device according to the present embodiment, for example, an organic EL (Electro Luminescence) display including an OLED (Organic Light Emitting Diode) as an electro-optical element, and an inorganic light-emitting diode as an electro-optical element are provided. Inorganic EL displays, and QLED displays equipped with QLEDs (Quantum dot Light Emitting Diodes) as electro-optical elements are exemplified.
　〔態様１〕
　本発明の態様１に係る表示デバイス（ＥＬ表示装置２）の製造方法は、表示エリア（８）にノッチ部（９）を有する表示デバイスの製造方法であって、被成膜基板（１１０）にＴＦＴ層（４）を形成するＴＦＴ層形成工程と、ＴＦＴ層（４）を含む被成膜基板（１１０）に、ＦＭＭシート（１２６）、ハウリングシート（１２７）、およびカバーシート（１３１）を備えた蒸着マスク（１２５）を用いて、機能層を形成する機能層形成工程と、を含み、ハウリングシート（１２７）、およびカバーシート（１３１）の少なくとも一方は、直線状部（１２７ｂ）と、ノッチ部（９）に対応するように直線状部（１２７ｂ）から突出する突出部（１２７ａ）と、を備え、上記ＴＦＴ層形成工程では、被成膜基板（１１０）の、突出部（１２７ａ）と重畳する位置に第１金属パターン（１１１）を形成する。 [Aspect 1]
A manufacturing method of a display device (EL display device 2) according to aspect 1 of the present invention is a manufacturing method of a display device having a notch portion (9) in a display area (8), and is provided on a deposition target substrate (110). A TFT layer forming step for forming the TFT layer (4), and a film formation substrate (110) including the TFT layer (4) are provided with an FMM sheet (126), a howling sheet (127), and a cover sheet (131). A functional layer forming step of forming a functional layer using the vapor deposition mask (125), wherein at least one of the howling sheet (127) and the cover sheet (131) includes a linear portion (127b) and a notch And a protruding portion (127a) protruding from the linear portion (127b) so as to correspond to the portion (9). In the TFT layer forming step, the protruding portion (127a) of the deposition target substrate (110). Forming a first metal pattern (111) in a position to be superimposed.
　〔態様２〕
　本発明の態様２に係る表示デバイスの製造方法は、上記の態様１において、第１金属パターン（１１１）は、ノッチ部（９）に沿うように、ノッチ部（９）の縁と表示エリア（８）との間の額縁領域に重畳して形成されていてもよい。 [Aspect 2]
In the display device manufacturing method according to aspect 2 of the present invention, in the above aspect 1, the first metal pattern (111) has an edge of the notch portion (9) and a display area so as to extend along the notch portion (9). 8) and may be formed so as to overlap with the frame area between.
　〔態様３〕
　本発明の態様３に係る表示デバイスの製造方法は、上記の態様１または２において、上記ＴＦＴ層形成工程は、複数の金属層を形成する工程と、上記複数の金属層の間に挟まれるように絶縁膜を形成する工程とを含み、第１金属パターン（１１１）は、上記複数の金属層が積層して形成されていてもよい。 [Aspect 3]
In the display device manufacturing method according to aspect 3 of the present invention, in the above aspect 1 or 2, the TFT layer forming step is sandwiched between the step of forming a plurality of metal layers and the plurality of metal layers. The first metal pattern (111) may be formed by laminating the plurality of metal layers.
　〔態様４〕
　本発明の態様４に係る表示デバイスの製造方法は、上記の態様３において、第１金属パターン（１１１）において、上記複数の金属層の間に上記絶縁膜が挟まれていてもよい。 [Aspect 4]
In the display device manufacturing method according to aspect 4 of the present invention, in the above aspect 3, in the first metal pattern (111), the insulating film may be sandwiched between the plurality of metal layers.
　〔態様５〕
　本発明の態様５に係る表示デバイスの製造方法は、上記の態様１～４の何れか１項において、第１金属パターン（１１１）は、ゲートレイヤ、容量配線レイヤ、およびソースレイヤの何れか１つであってもよい。 [Aspect 5]
In the display device manufacturing method according to aspect 5 of the present invention, in any one of the above aspects 1 to 4, the first metal pattern (111) is any one of a gate layer, a capacitor wiring layer, and a source layer. It may be one.
　〔態様６〕
　本発明の態様６に係る表示デバイスの製造方法は、上記の態様１～５の何れか１項において、第１金属パターン（１１１）は、磁化されることが可能な磁性金属により構成されていてもよい。 [Aspect 6]
In the method for manufacturing a display device according to aspect 6 of the present invention, in any one of the above aspects 1 to 5, the first metal pattern (111) is made of a magnetic metal that can be magnetized. Also good.
　〔態様７〕
　本発明の態様７に係る表示デバイスの製造方法は、上記の態様１～６の何れか１項において、第１金属パターン（１１１）は、上記突出部の全ての領域と重畳していてもよい。 [Aspect 7]
In the method for manufacturing a display device according to aspect 7 of the present invention, in any one of the above aspects 1 to 6, the first metal pattern (111) may overlap the entire region of the protrusion. .
　〔態様８〕
　本発明の態様８に係る表示デバイスの製造方法は、上記の態様１～７の何れか１項において、被成膜基板（１１０）の、上記直線状部に重畳する位置に第２金属パターン（１１２）が形成されていてもよい。 [Aspect 8]
The method for manufacturing a display device according to aspect 8 of the present invention is the method for manufacturing a display device according to any one of the above aspects 1 to 7, wherein the second metal pattern (at the position overlapping the linear portion of the deposition target substrate (110)). 112) may be formed.
　〔態様９〕
　本発明の態様９に係る表示デバイスの製造方法は、上記の態様８において、第２金属パターン（１１２）の厚さは、第１金属パターン（１１１）の厚さよりも薄くてもよい。 [Aspect 9]
In the method for manufacturing a display device according to aspect 9 of the present invention, in the above aspect 8, the thickness of the second metal pattern (112) may be smaller than the thickness of the first metal pattern (111).
　〔態様１０〕
　本発明の態様１０に係る表示デバイスの製造方法は、上記の態様８または９において、第２金属パターン（１１２）には、少なくとも一つの開口が形成されていてもよい。 [Aspect 10]
In the method for manufacturing a display device according to aspect 10 of the present invention, in the above aspect 8 or 9, at least one opening may be formed in the second metal pattern (112).
　〔態様１１〕
　本発明の態様１１に係る表示デバイスの製造方法は、上記の態様８～１０の何れか１項において、第２金属パターン（１１２）は、ゲートレイヤ、容量配線レイヤ、およびソースレイヤの何れか１つであってもよい。 [Aspect 11]
In the method for manufacturing a display device according to aspect 11 of the present invention, in any one of the above aspects 8 to 10, the second metal pattern (112) is any one of a gate layer, a capacitor wiring layer, and a source layer. It may be one.
　〔態様１２〕
　本発明の態様１２に係る表示デバイスの製造方法は、上記の態様８～１１の何れか１項において、第２金属パターン（１１２）は、磁化されることが可能な磁性金属により構成されていてもよい。 [Aspect 12]
In the display device manufacturing method according to Aspect 12 of the present invention, in any one of Aspects 8 to 11, the second metal pattern (112) is made of a magnetic metal that can be magnetized. Also good.
　〔態様１３〕
　本発明の態様１３に係る表示デバイスの製造方法は、上記の態様１～１２の何れか１項において、ハウリングシート（１２７）及びカバーシート（１３１）の少なくとも一方は、インバーで構成されていてもよい。 [Aspect 13]
In the method for manufacturing a display device according to aspect 13 of the present invention, in any one of the above aspects 1 to 12, at least one of the howling sheet (127) and the cover sheet (131) may be composed of invar. Good.
　〔態様１４〕
　本発明の態様１４に係る表示デバイスの製造方法は、上記の態様１～１２の何れか１項において、ハウリングシート（１２７）及びカバーシート（１３１）の少なくとも一方は、ステンレス鋼で構成されていてもよい。 [Aspect 14]
In the display device manufacturing method according to aspect 14 of the present invention, in any one of the above aspects 1 to 12, at least one of the howling sheet (127) and the cover sheet (131) is made of stainless steel. Also good.
　〔態様１５〕
　本発明の態様１５に係る表示デバイス（ＥＬ表示装置２）は、表示エリア（８）にノッチ部（９）を有する表示デバイスであって、ＴＦＴ層（４）と、ＴＦＴ層（４）よりも上層に設けられる機能層とを有し、ＴＦＴ層（４）に第１金属パターン（１１１）が含まれ、第１金属パターン（１１１）は、ノッチ部（９）の縁と表示エリア（８）との間の額縁領域に重畳する。 [Aspect 15]
The display device (EL display device 2) according to the aspect 15 of the present invention is a display device having a notch portion (9) in the display area (8), which is more than the TFT layer (4) and the TFT layer (4). The TFT layer (4) includes the first metal pattern (111), and the first metal pattern (111) includes the edge of the notch (9) and the display area (8). It overlaps with the frame area between.
　本発明は上述した各実施形態に限定されるものではなく、請求項に示した範囲で種々の変更が可能であり、異なる実施形態にそれぞれ開示された技術的手段を適宜組み合わせて得られる実施形態についても本発明の技術的範囲に含まれる。さらに、各実施形態にそれぞれ開示された技術的手段を組み合わせることにより、新しい技術的特徴を形成することができる。 The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention. Furthermore, a new technical feature can be formed by combining the technical means disclosed in each embodiment.
２　ＥＬ表示装置（表示デバイス）
７　完成デバイス
８　表示エリア
９　ノッチ部
１００、１００ａ　蒸着装置
１１０、１１０a　被成膜基板
１１１　第１金属パターン
１１２、１１２ａ　第２金属パターン
１１２ａ１　開口
１２１　マグネットプレート
１２２　タッチプレート
１２５　蒸着マスク
１２６　ＦＭＭシート
１２７　ハウリングシート
１２７a　突出部
１２７ｂ　直線状部
１３０　フレーム
１３１　カバーシート 2 EL display device (display device)
7 Completed device 8 Display area 9 Notch part 100, 100a Evaporation apparatus 110, 110a Deposition substrate 111 First metal pattern 112, 112a Second metal pattern 112a1 Opening 121 Magnet plate 122 Touch plate 125 Deposition mask 126 FMM sheet 127 Howling sheet 127a Protruding portion 127b Linear portion 130 Frame 131 Cover sheet

Claims (15)

  1. 　表示エリアにノッチ部を有する表示デバイスの製造方法であって、
    　被成膜基板にＴＦＴ層を形成するＴＦＴ層形成工程と、
    　上記ＴＦＴ層を含む上記被成膜基板に、ＦＭＭシート、ハウリングシート、およびカバーシートを備えた蒸着マスクを用いて、機能層を形成する機能層形成工程と、を含み、
    　　上記ハウリングシート、およびカバーシートの少なくとも一方は、直線状部と、上記ノッチ部に対応するように上記直線状部から突出する突出部と、を備え、
    　　上記ＴＦＴ層形成工程では、上記被成膜基板の、上記突出部と重畳する位置に第１金属パターンを形成する
    ことを特徴とする表示デバイスの製造方法。     A method for manufacturing a display device having a notch in a display area,
    A TFT layer forming step of forming a TFT layer on the film formation substrate;
    A functional layer forming step of forming a functional layer on the deposition target substrate including the TFT layer, using a deposition mask provided with an FMM sheet, a howling sheet, and a cover sheet;
    At least one of the howling sheet and the cover sheet includes a linear portion and a protruding portion protruding from the linear portion so as to correspond to the notch portion,
    In the TFT layer forming step, a method of manufacturing a display device, wherein a first metal pattern is formed at a position overlapping the protruding portion of the deposition target substrate.
  2. 　上記第１金属パターンは、上記ノッチ部に沿うように、当該ノッチ部の縁と上記表示エリアとの間の額縁領域に重畳して形成されている
    ことを特徴とする請求項１に記載の表示デバイスの製造方法。     2. The display according to claim 1, wherein the first metal pattern is formed so as to overlap a frame region between an edge of the notch portion and the display area along the notch portion. Device manufacturing method.
  3. 　上記ＴＦＴ層形成工程は、複数の金属層を形成する工程と、上記複数の金属層の間に挟まれるように絶縁膜を形成する工程とを含み、
    　上記第１金属パターンは、上記複数の金属層が積層して形成される
    ことを特徴とする請求項１または２に記載の表示デバイスの製造方法。     The TFT layer forming step includes a step of forming a plurality of metal layers and a step of forming an insulating film so as to be sandwiched between the plurality of metal layers.
    The method for manufacturing a display device according to claim 1, wherein the first metal pattern is formed by laminating the plurality of metal layers.
  4. 　上記第１金属パターンにおいて、上記複数の金属層の間に上記絶縁膜が挟まれている
    ことを特徴とする請求項３に記載の表示デバイスの製造方法。     The method for manufacturing a display device according to claim 3, wherein the insulating film is sandwiched between the plurality of metal layers in the first metal pattern.
  5. 　上記第１金属パターンは、ゲートレイヤ、容量配線レイヤ、およびソースレイヤの何れか１つである
    ことを特徴とする請求項１～４の何れか１項に記載の表示デバイスの製造方法。     5. The method of manufacturing a display device according to claim 1, wherein the first metal pattern is any one of a gate layer, a capacitor wiring layer, and a source layer.
  6. 　上記第１金属パターンは、磁化されることが可能な磁性金属により構成される
    ことを特徴とする請求項１～５の何れか１項に記載の表示デバイスの製造方法。     6. The method for manufacturing a display device according to claim 1, wherein the first metal pattern is made of a magnetic metal that can be magnetized.
  7. 　上記第１金属パターンは、上記突出部の全ての領域と重畳する
    ことを特徴とする請求項１～６の何れか１項に記載の表示デバイスの製造方法。     7. The method of manufacturing a display device according to claim 1, wherein the first metal pattern overlaps with the entire region of the protruding portion.
  8. 　上記被成膜基板の、上記直線状部に重畳する位置に第２金属パターンが形成されている
    ことを特徴とする請求項１～７の何れか１項に記載の表示デバイスの製造方法。     8. The method for manufacturing a display device according to claim 1, wherein a second metal pattern is formed at a position overlapping the linear portion of the deposition target substrate.
  9. 　上記第２金属パターンの厚さは、上記第１金属パターンの厚さよりも薄い
    ことを特徴とする請求項８に記載の表示デバイスの製造方法。     The method of manufacturing a display device according to claim 8, wherein a thickness of the second metal pattern is thinner than a thickness of the first metal pattern.
  10. 　上記第２金属パターンには、少なくとも一つの開口が形成されている
    ことを特徴とする請求項８または９に記載の表示デバイスの製造方法。     10. The method of manufacturing a display device according to claim 8, wherein at least one opening is formed in the second metal pattern.
  11. 　上記第２金属パターンは、ゲートレイヤ、容量配線レイヤ、およびソースレイヤの何れか１つである
    ことを特徴とする請求項８～１０の何れか１項に記載の表示デバイスの製造方法。     11. The method of manufacturing a display device according to claim 8, wherein the second metal pattern is any one of a gate layer, a capacitor wiring layer, and a source layer.
  12. 　上記第２金属パターンは、磁化されることが可能な磁性金属により構成される
    ことを特徴とする請求項８～１１の何れか１項に記載の表示デバイスの製造方法。     12. The method for manufacturing a display device according to claim 8, wherein the second metal pattern is made of a magnetic metal that can be magnetized.
  13. 　上記ハウリングシート及びカバーシートの少なくとも一方は、インバーで構成される
    ことを特徴とする請求項１～１２の何れか１項に記載の表示デバイスの製造方法。     The method for manufacturing a display device according to any one of claims 1 to 12, wherein at least one of the howling sheet and the cover sheet is made of invar.
  14. 　上記ハウリングシート及びカバーシートの少なくとも一方は、ステンレス鋼で構成される
    ことを特徴とする請求項１～１２の何れか１項に記載の表示デバイスの製造方法。     13. The method for manufacturing a display device according to claim 1, wherein at least one of the howling sheet and the cover sheet is made of stainless steel.
  15. 　表示エリアにノッチ部を有する表示デバイスであって、
    　ＴＦＴ層と、上記ＴＦＴ層よりも上層に設けられる機能層とを有し、
    　上記ＴＦＴ層に第１金属パターンが含まれ、
    　上記第１金属パターンは、上記ノッチ部の縁と上記表示エリアとの間の額縁領域に重畳する
    ことを特徴とする表示デバイス。     A display device having a notch portion in a display area,
    A TFT layer and a functional layer provided above the TFT layer;
    The TFT layer includes a first metal pattern,
    The display device according to claim 1, wherein the first metal pattern is superimposed on a frame region between an edge of the notch and the display area.
PCT/JP2018/012559 2018-03-27 2018-03-27 Manufacturing method for display device, and display device WO2019186720A1 (en)

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