WO2019176457A1

WO2019176457A1 - Organic el display device and method for manufacturing organic el display device

Info

Publication number: WO2019176457A1
Application number: PCT/JP2019/005841
Authority: WO
Inventors: 典久前田
Original assignee: 株式会社ジャパンディスプレイ
Priority date: 2018-03-14
Filing date: 2019-02-18
Publication date: 2019-09-19
Also published as: JP2019160632A

Abstract

An organic EL display device wherein defects due to leakage current are reduced. This organic EL display device has: a substrate; a plurality of pixels positioned on the substrate; a lower electrode provided for each of the plurality of pixels; a bank arranged between adjacent lower electrodes and defining the plurality of pixels; an organic material layer arranged on top of the lower electrode and the bank; an upper electrode arranged on the organic material layer; and a light-absorbing layer arranged on the upper electrode. An absorption section that absorbs light emitted from the organic material layer is formed in a portion of the light-absorbing layer which, in a plan view, overlaps the bank.

Description

Organic EL display device and method of manufacturing organic EL display device

The present invention relates to an organic EL display device and a method for manufacturing the organic EL display device.

An organic electroluminescence (EL) display device has a display panel in which a thin film transistor (TFT), an organic light emitting diode (OLED), or the like is formed on a substrate. An OLED includes an organic material layer between a pair of electrodes. The organic material layer is configured by stacking, for example, a hole transport layer, a light emitting layer, an electron transport layer, and the like. Such an organic material layer is typically formed in a region surrounded by a convex bank provided in advance for partitioning pixels. For example, in the following Patent Document 1, an organic material layer is formed (painted separately) for each pixel. However, when the resolution is increased or the aperture ratio of the bank is increased in order to increase the light emission efficiency, the organic material layer is separately applied. There is a problem that it is difficult to control. On the other hand, for example, when a conductive material such as a hole transport layer is provided in common between a plurality of pixels, there is a problem that a leakage current flows between adjacent pixels. Specifically, there is a problem in that adjacent pixels that should not emit light due to a leak current emit light, leading to a decrease in contrast and color purity. Such a problem can be more prominent as the definition becomes higher and the driving voltage is reduced (for example, adoption of a high mobility material).

For example, in Japanese Patent Application Laid-Open No. 2004-228542, it is proposed to prevent the movement of carriers between adjacent pixels by forming a dividing region in the organic material layer on the bank.

JP 2009-88320 A JP 2016-103395 A

By the way, it is considered that the leakage current causes not only the neighboring pixels to emit light but also light emission on the bank, for example.

In view of the above, an object of the present invention is to provide an organic EL display device in which problems due to leakage current are suppressed.

According to one aspect of the present invention, an organic EL display device is provided. An organic EL display device according to the present invention is disposed between a substrate, a plurality of pixels located on the substrate, a lower electrode provided in each of the plurality of pixels, and the adjacent lower electrode, and the plurality of pixels An organic material layer disposed on the lower electrode and the bank, an upper electrode disposed on the organic material layer, and a light absorption layer disposed on the upper electrode. In the light absorption layer, an absorption portion for absorbing light emitted from the organic material layer is formed in a portion overlapping the bank in plan view.

According to another aspect of the present invention, a method for manufacturing a display device is provided. A method of manufacturing a display device according to the present invention includes forming a lower electrode corresponding to each of a plurality of pixels on a substrate and partitioning the plurality of pixels between the adjacent lower electrodes on the substrate. Forming an organic material layer on the lower electrode and the bank, forming an upper electrode on the organic material layer, and absorbing light by light irradiation on the upper electrode Forming a layer including a material having a light emitting property, and selectively irradiating light on a portion including the material having an absorption capability by the light irradiation in a portion overlapping the bank in a plan view.

1 is a schematic diagram illustrating a schematic configuration of an organic EL display device according to an embodiment of the present invention. FIG. 2 is a schematic plan view illustrating an example of a display panel of the organic EL display device illustrated in FIG. 1. FIG. 3 is a diagram showing an example of a III-III cross section of FIG. 2. FIG. 4 is an enlarged cross-sectional view of an example near a bank of the display panel shown in FIG. 3. It is a figure which shows the example of a manufacturing process of the organic electroluminescence display which concerns on embodiment. It is a figure which shows the modification of the manufacturing process of the organic electroluminescence display which concerns on embodiment. FIG. 4 is an enlarged cross-sectional view of a modified example near the bank of the display panel shown in FIG. 3. It is a figure for demonstrating the positional relationship of a bank and the absorption part of a light absorption layer. It is a figure for demonstrating the positional relationship of a bank and the absorption part of a light absorption layer. It is a figure for demonstrating the positional relationship of a bank and the absorption part of a light absorption layer. It is a figure for demonstrating the positional relationship of a bank and the absorption part of a light absorption layer. It is a schematic diagram which shows the layer structure of each light emitting element in case an organic EL display apparatus contains a capping layer. It is a schematic diagram which shows the layer structure of each light emitting element in case an organic EL display apparatus contains a capping layer. It is a schematic diagram which shows the layer structure of each light emitting element in case an organic EL display apparatus contains a capping layer. It is a schematic diagram which shows the layer structure of each light emitting element in case an organic EL display apparatus contains a capping layer.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. It should be noted that the disclosure is merely an example, and those skilled in the art can easily conceive of appropriate changes while maintaining the gist of the invention are naturally included in the scope of the present invention. In addition, the drawings may be schematically evaluated with respect to the width, thickness, shape, and the like of each part as compared with actual embodiments for clarity of explanation, but are merely examples, and are interpreted as the interpretation of the present invention. It is not intended to limit. In addition, in the present specification and each drawing, elements similar to those described above with reference to the previous drawings may be denoted by the same reference numerals and detailed description thereof may be omitted as appropriate.

Further, in the detailed description of the present invention, when the positional relationship between a certain component and another component is defined, “up” and “down” are used only when the component is positioned directly above or directly below a certain component. Unless otherwise specified, the case where another component is further interposed is included.

FIG. 1 is a schematic diagram showing a schematic configuration of an organic EL display device according to an embodiment of the present invention. The organic EL display device 2 includes a pixel array unit 4 that displays an image and a drive unit that drives the pixel array unit 4. The organic EL display device 2 has a display panel configured by stacking structures such as TFTs and OLEDs on a substrate. The schematic diagram shown in FIG. 1 is an example, and the present embodiment is not limited to this.

In the pixel array unit 4, OLEDs 6 and pixel circuits 8 are arranged in a matrix corresponding to the pixels. The pixel circuit 8 includes a plurality of TFTs 10 and 12 and a capacitor 14.

The drive unit includes a scanning line drive circuit 20, a video line drive circuit 22, a drive power supply circuit 24, and a control device 26, and drives the pixel circuit 8 to control light emission of the OLED 6.

The scanning line driving circuit 20 is connected to a scanning signal line 28 provided for each horizontal arrangement (pixel row) of pixels. The scanning line driving circuit 20 sequentially selects the scanning signal lines 28 according to the timing signal input from the control device 26, and applies a voltage for turning on the lighting TFT 10 to the selected scanning signal lines 28.

The video line driving circuit 22 is connected to a video signal line 30 provided for each vertical arrangement (pixel column) of pixels. The video line driving circuit 22 receives a video signal from the control device 26, and in accordance with the selection of the scanning signal line 28 by the scanning line driving circuit 20, a voltage corresponding to the video signal of the selected pixel row is applied to each video signal line. Output to 30. The voltage is written into the capacitor 14 via the lighting TFT 10 in the selected pixel row. The driving TFT 12 supplies a current corresponding to the written voltage to the OLED 6, whereby the OLED 6 of the pixel corresponding to the selected scanning signal line 28 emits light.

The drive power supply circuit 24 is connected to a drive power supply line 32 provided for each pixel column, and supplies current to the OLED 6 via the drive power supply line 32 and the drive TFT 12 of the selected pixel row.

Here, the lower electrode of the OLED 6 is connected to the driving TFT 12. On the other hand, the upper electrode of each OLED 6 is configured by an electrode common to the OLED 6 of all pixels. When the lower electrode is configured as an anode (anode), a high potential is input, and the upper electrode is a cathode (cathode) and a low potential is input. When the lower electrode is configured as a cathode (cathode), a low potential is input, and the upper electrode is an anode (anode) and a high potential is input.

FIG. 2 is a schematic plan view showing an example of the display panel of the organic EL display device shown in FIG. The pixel array unit 4 shown in FIG. 1 is provided in the display area 42 of the display panel 40, and the OLEDs 6 are arranged in the pixel array unit 4 as described above. As described above, the upper electrode constituting the OLED 6 is formed in common for each pixel and covers the entire display region 42.

A component mounting area 46 is provided on one side of the rectangular display panel 40, and wiring connected to the display area 42 is arranged. In the component mounting area 46, a driver integrated circuit (IC) 48 constituting a driving unit is mounted or an FPC 50 is connected. A flexible printed circuit board (FPC) 50 is connected to the control device 26 and

other circuits

20, 22, 24, etc., and an IC is mounted thereon.

FIG. 3 is a view showing an example of a section taken along the line III-III in FIG. The display panel 40 has a structure in which a circuit layer 74 made of a TFT 72 and the like, an OLED 6 and a sealing layer 106 for sealing the OLED 6 are stacked on a substrate 70. The substrate 70 is formed of, for example, a glass plate or a resin film (for example, a resin film containing a resin such as a polyimide resin). In the present embodiment, the pixel array unit 4 is a top emission type, and the light generated by the OLED 6 is emitted to the side opposite to the substrate 70 side (upward in FIG. 3).

In the circuit layer 74 of the display area 42, the pixel circuit 8, the scanning signal line 28, the video signal line 30, the drive power supply line 32, and the like are formed. At least a part of the driving unit can be formed on the substrate 70 as a circuit layer 74 in a region adjacent to the display region 42. As described above, the driver IC 48 and the FPC 50 constituting the driving unit can be connected to the wiring 116 of the circuit layer 74 in the component mounting region 46.

As shown in FIG. 3, a base layer 80 made of an inorganic insulating material is disposed on the substrate 70. As the inorganic insulating material, for example, silicon nitride (SiN _y ), silicon oxide (SiO _x ), and a composite thereof are used.

In the display region 42, a semiconductor region 82 serving as a channel portion and a source / drain portion of the top gate type TFT 72 is formed on the substrate 70 through the base layer 80. The semiconductor region 82 is made of, for example, polysilicon (p-Si). The semiconductor region 82 is formed, for example, by providing a semiconductor layer (p-Si film) on the substrate 70, patterning the semiconductor layer, and selectively leaving a portion used in the circuit layer 74.

A gate electrode 86 is disposed on the channel portion of the TFT 72 via a gate insulating film 84. The gate insulating film 84 is typically formed of TEOS. The gate electrode 86 is formed by patterning a metal film formed by sputtering or the like, for example. An interlayer insulating layer 88 is disposed on the gate electrode 86 so as to cover the gate electrode 86. The interlayer insulating layer 88 is formed of, for example, the above inorganic insulating material. Impurities are introduced into the semiconductor region 82 (p-Si) serving as the source / drain portion of the TFT 72 by ion implantation, and further, a source electrode 90a and a drain electrode 90b electrically connected thereto are formed. Is done.

On the TFT 72, an interlayer insulating film 92 is disposed. A wiring 94 is disposed on the surface of the interlayer insulating film 92. For example, the wiring 94 is formed by patterning a metal film formed by sputtering or the like. The metal film forming the wiring 94 and the metal film used for forming the gate electrode 86, the source electrode 90a, and the drain electrode 90b include, for example, the wiring 116 and the scanning signal line 28, the video signal line 30, and the like shown in FIG. The drive power supply line 32 can be formed with a multilayer wiring structure. A planarizing film 96 and a passivation film 98 are formed thereon, and the OLED 6 is formed on the passivation film 98 in the display region 42. The planarizing film 96 is made of, for example, a resin material. The passivation film 98 is formed of an inorganic insulating material such as SiN _y , for example.

The OLED 6 includes a lower electrode 100, an organic material layer 102, and an upper electrode 104. The OLED 6 is typically formed by laminating the lower electrode 100, the organic material layer 102, and the upper electrode 104 in this order from the substrate 70 side. In the present embodiment, the lower electrode 100 is the anode (anode) of the OLED 6 and the upper electrode 104 is the cathode (cathode).

3 is a driving TFT 12 having an n channel, the lower electrode 100 is connected to the source electrode 90a of the TFT 72. Specifically, after the above-described planarization film 96 is formed, a contact hole 110 for connecting the lower electrode 100 to the TFT 72 is formed. For example, the surface of the planarization film 96 and the conductor portion formed in the contact hole 110. By patterning, the lower electrode 100 connected to the TFT 72 is formed for each pixel. The lower electrode 100 is made of, for example, a transparent metal oxide such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), or a metal such as Ag or Al.

On the above structure, a bank 112 for separating pixels is arranged. The bank 112 electrically isolates the lower electrode 100 provided corresponding to each pixel, and is formed so as to cover the periphery of the lower electrode 100 from the upper surface to the side surface. The bank 112 is typically formed of a resin material such as polyimide resin or acrylic resin. The side surface of the bank 112 has an inclined surface that inclines toward the substrate 70 toward the lower electrode 100 side (outside).

For example, after the formation of the lower electrode 100, a bank 112 is formed at the pixel boundary, and the organic material layer 102 and the upper electrode 104 are stacked in an effective region (region where the lower electrode 100 is exposed) surrounded by the bank 112. The The organic material layer 102 (the light emitting layer 103 to be described later may be excluded) and the upper electrode 104 are provided in common among the pixels, and are provided not only on the upper surface of the lower electrode 100 but also on the bank 112.

The organic material layer 102 typically includes a plurality of layers. Specifically, the organic material layer 102 is formed by laminating a hole transport layer, a light emitting layer, and an electron transport layer in order from the anode side. The organic material layer 102 may include other layers. Examples of the other layers include a hole injection layer and an electron blocking layer disposed between the anode and the light emitting layer, and an electron injection layer and a hole blocking layer disposed between the cathode and the light emitting layer. The upper electrode 104 is made of a transmissive conductive film. The transparent conductive film is made of, for example, an ultrathin alloy of Mg and Ag, or a transparent metal oxide such as ITO or IZO.

A sealing layer 106 is disposed on the upper electrode 104. The sealing layer 106 can function as a protective layer that protects the OLED 6 from moisture or the like, and is formed so as to cover the entire display region 42. The sealing layer 106 has a laminated structure including the first sealing film 161, the sealing planarization film 160, and the second sealing film 162 in this order. The first sealing film 161 and the second sealing film 162 are formed of an inorganic material (for example, the inorganic insulating material). Specifically, it is formed by forming a SiN _y film by chemical vapor deposition (CVD). The sealing planarization film 160 is formed using an organic material (for example, a resin material such as a curable resin composition).

Although not shown, for example, a protective film is disposed on the surface of the display area 42 in order to ensure the mechanical strength of the surface of the display panel 40. Specifically, a sheet-like or film-like protective film is bonded onto the sealing layer 106 via an adhesive layer. In this case, in the component mounting region 46, a protective film is usually not provided in order to facilitate connection of an IC or FPC. The wiring of the FPC 50 and the terminal of the driver IC 48 are electrically connected to the wiring 116, for example. Although not shown, a protective sheet that can absorb the wavelength of light irradiated when forming an absorption portion 109 of the light absorption layer 108 described later can be disposed in the display region 42 of the display panel 40. For example, this is to prevent the absorption portion 109 from being formed in a region facing the pixel region of the light absorption layer 108.

A light absorption layer 108 is disposed between the upper electrode 104 and the sealing layer 106. For example, the light absorption layer 108 is formed so as to cover the entire display region 42 across a plurality of pixels. In the light absorption layer 108, an absorption portion 109 that absorbs light emitted from the organic material layer 102 is formed in a portion that overlaps the bank 112 in plan view, and an organic portion is formed in the portion that overlaps the opening portion of the bank 112 in plan view. The light emitted from the material layer 102 is transmitted. That is, the light transmittance of the absorbing portion 109 is smaller than the light transmittance of portions other than the absorbing portion 109 of the light absorbing layer 108. By disposing such a light absorption layer 108, light emission on the bank 112 is selectively absorbed, which can contribute to improvement of display characteristics (for example, front chromaticity, visual characteristics). Further, reflection of external light on the bank 112 can be suppressed, which is advantageous when a polarizing plate is not stacked on the display region 42. The thickness of the light absorption layer 108 is desirably 0.5 μm or more and 5 μm or less, for example. The absorption wavelength of the absorber 109 is, for example, in the visible light region (for example, 380 nm to 780 nm). In a preferred embodiment, the absorber 109 absorbs substantially the entire visible light region. In another embodiment, from the viewpoint of visibility, the absorber 109 absorbs part or all of the green wavelength (for example, in the range of 500 nm to 570 nm).

4 is an enlarged cross-sectional view of an example of the vicinity of the bank of the display panel shown in FIG. 3. Of the laminated structure of the display panel 40 shown in FIG. 3, the laminated structure from the base layer 80 on the substrate 70 to the passivation film 98 is shown. Is simplified as the upper structure layer 114, and the sealing layer 106 is omitted.

The organic material layer 102 includes, for example, a hole injection layer 102a, a hole transport layer 102b, and an electron block layer 102c provided in this order on a lower electrode (anode) 100 and a bank 112 in common in a plurality of pixels. On the layer 102c, a light emitting layer 103 corresponding to the color of each pixel is provided in each pixel region, and a plurality of hole blocking layers 102d, an electron transport layer 102e, and an electron injection layer 102f are arranged in this order so as to cover the light emitting layer 103. These pixels are provided and formed in common. Here, the thickness of each layer constituting the organic material layer 102 may be the same or different in each pixel.

The light emission on the bank 112 may occur when the light emitting layer 103 exists on the bank 112 as shown in FIG. Specifically, holes are injected from the anode 100 into the organic material layer 102, electrons are injected from the cathode 104 into the organic material layer 102, and holes and electrons are recombined in the light emitting layer 103 so that the light emitting layer 103 emits light. However, if the light emitting layer 103 is present on the bank 112, light can be emitted also on the bank 112. Although the light emission on the bank 112 is relatively weak (for example, it is a level that is not confirmed by microscopic observation but can be confirmed by microscopic light), it can affect the light emission efficiency and display characteristics. As described above, light emission on the bank 112 can be absorbed by disposing the light absorption layer 108 including the absorption portion 109 that absorbs light emitted from the organic material layer 102 in a portion overlapping the bank 112 in plan view. .

The light absorption layer 108 includes, for example, a material that absorbs light (for example, photochromic materials such as spiropyrans, azobenzenes, diarylethenes, fulgides, hexaarylbisimidazole derivatives, and melanin), and the absorption unit 109 includes The material is in a state of being absorbed by light irradiation.

FIG. 5 is a diagram illustrating an example of a manufacturing process of the organic EL display device according to the embodiment. Specifically, FIG. 5 shows a process of forming the absorbing portion 109 by light irradiation. As shown in FIG. 5, a layer (also referred to as a precursor of a light absorption layer) 107 containing a material capable of absorbing light is formed on the upper electrode 104 by, for example, vapor deposition or spin coating. Thereafter, the mask material 120 is disposed in a portion overlapping the opening of the bank 112 in plan view. In the mask material 120, for example, an opening is formed in a portion overlapping the bank 112 in plan view.

In the state in which the mask material 120 is disposed on the layer 107 containing a material that absorbs light, light is irradiated from above the mask 120 (the side on which the bank 112 is not disposed). The wavelength of light to be radiated can be determined according to a material that has the ability to absorb light, but is, for example, in the ultraviolet region (for example, 250 nm to 360 nm). In this way, light is selectively irradiated onto a portion overlapping the bank 112 in plan view, and the light absorption layer 108 in which the absorption portion 109 is formed is obtained. The timing of light irradiation is not particularly limited as long as it is after the formation of a layer containing a material capable of absorbing light, but the light irradiation is performed before, for example, laminating a polarizing plate in the display region 42.

FIG. 6 is a view showing a modification of the manufacturing process of the organic EL display device according to the embodiment. The present modification is different from the above embodiment in that the mask material 120 is not used and light is selectively irradiated to a portion overlapping the bank 112 in a plan view by laser light.

FIG. 7 is an enlarged cross-sectional view of a modified example near the bank of the display panel shown in FIG. In the above embodiment, the light absorption layer 108 is a single layer body, whereas in the present modification, the light absorption layer 108 is a stacked body including a plurality of layers. Specifically, the light absorption layer 108 includes a first light absorption layer 108a, a second light absorption layer 108b, and a third light absorption layer 108c in this order from the side where the bank 112 is disposed. In addition,

absorption portions

109a, 109b, and 109c are formed in portions overlapping the bank 112 in plan view, respectively. The absorption wavelengths of the absorbing

portions

109a, 109b, and 109c in each layer may be the same or different. In one embodiment, the absorbing

portions

109a, 109b, and 109c of each layer absorb light of different wavelengths, and substantially absorb the entire visible light region as the entire light absorbing layer 108 (absorbing portion 109).

As shown in FIG. 7, when the light absorption layer 108 includes a plurality of layers, the

absorption portions

109a, 109b, and 109c of the

layers

108a, 108b, and 108c may be formed for each layer, or a plurality of layers are stacked. You may form in a lump later. When the layers constituting the light absorption layer 108 are formed of different materials, it is preferable to form the

absorption portions

109a, 109b, and 109c for each layer. Specifically, after forming the precursor of the first light absorption layer 108a and forming the absorption portion 109a by light irradiation, the precursor of the second light absorption layer 108b is formed on the first light absorption layer 108a, and the light The absorbing portion 109b is formed by irradiation. Thereafter, a precursor of the third light absorption layer 108c is formed on the second light absorption layer 108b, and the absorption portion 109c is formed by light irradiation.

8A to 8D are diagrams for explaining the positional relationship between the bank and the absorption unit. 8A to 8D, only the lower electrode 100, the bank 112, the organic material layer 102, and the light absorption layer 108 among the components shown in FIG. 3 are shown for easy understanding of the positional relationship. In the preferred embodiment, as shown in FIG. 8A, the absorber 109 covers the entire bank 112, and the end of the bank 112 and the end of the bank 112 are aligned. It is formed so as not to overlap the part. In another embodiment, as shown in FIG. 8B, the absorbing portion 109 is formed so as to cover at least the end portion (inclined surface) 112 a of the bank 112, and faces the end portion of the bank 112. Further, it is not formed in the central portion 112b of the bank 112 (more specifically, the surface of the bank located between two adjacent pixels or the central portion of the upper surface). The light emission on the bank 112 is stronger as it is closer to the opening of the bank 112. In this embodiment, the absorption portion 109 is selectively formed at a location where the light emission is strong. In still another embodiment, as shown in FIG. 8C, the absorbing portion 109 is formed so as to cover at least the central portion 112 b of the bank 112, and is not formed on the end portion (slope) 112 a of the bank 112. This form is preferable, for example, in that the difficulty of forming the absorbing portion 109 is low. In yet another embodiment, as shown in FIG. 8D, the absorbing portion 109 is formed so as to cover the entire bank 112 and its end portion also covers the opening of the bank 112. In this embodiment, the opening area (light emitting area) of the bank 112 is reduced, but light emission on the bank 112 can be effectively reduced.

The light absorption layer 108 can be disposed at any appropriate position as long as it can absorb light emitted from the organic material layer 102 in a portion overlapping the bank 112 in plan view. Practically, the light absorption layer 108 is disposed on the light emission side with respect to the organic material layer 102. Although not shown in FIGS. 4 and 7, for example, a capping layer (also referred to as an optical path adjustment layer or a cap layer) may be provided from the viewpoint of improving light emission (light utilization) efficiency. The capping layer is typically a layer provided above the upper electrode 104, and a layer capable of generating an optical interference component by reflecting light between the capping layer and the upper electrode 104 to enhance optical resonance. It is. The capping layer has a refractive index of 1.7 to 2.4 with respect to light having a wavelength in the range of 380 nm to 780 nm, for example. In this case, the light absorption layer 108 can be disposed on the light emission side of the capping layer.

FIG. 9A to FIG. 9D are schematic views showing the layer structure of each light emitting element when the organic EL display device includes a capping layer. A first light emitting element 201 (for example, a red light emitting element), a second light emitting element 202 (for example, a green light emitting element), and a third light emitting element 203 (for example, a blue light emitting element) are formed on the anode 100. Yes. 9A to 9D, the layers formed below the anode 100 among the components shown in FIG. 3 are omitted.

As described above, the organic material layer 102 of each light emitting

element

201, 202, 203 includes the hole injection layer 102a, the hole transport layer 102b, the electron blocking layer 102c, the light emitting layer 103, the hole blocking layer 102d, the electron transport layer 102e, and the electron injection. Includes layer 102f. In the illustrated example, the hole transport layer 102b of the red light emitting element 201 and the green light emitting element 202 is provided in each of the common layer 102b-1 provided in common among a plurality of pixels, and the red light emitting element 201 and the green light emitting element 202. And an individual layer 102b-2. In the illustrated example, the thickness of the individual layer 102b-2 varies depending on the color of the pixel, and the red color is set thicker than the green color. 9A to 9D, the thickness of the light emitting layer 103B of the blue light emitting element 203 is set to be thinner than the light emitting layer 103R of the red light emitting element 201 and the light emitting layer 103G of the green light emitting element 202. However, the thickness of the light emitting layer 103B, the light emitting layer 103R, and the light emitting layer 103G is not limited to the structure shown in FIGS. 9A to 9D, and for example, the thickness of the light emitting layer 103B, the light emitting layer 103R, and the light emitting layer 103G is substantially equal. It may be structured.

A capping layer 130 is provided on the cathode 104. The capping layer 130 of each light emitting

element

201, 202, 203 has a laminated structure in which a first capping layer 131 and a second capping layer 132 having different refractive indexes are laminated in order from the cathode 104 side. Each

capping layer

131, 132 may be disposed across the

light emitting elements

201, 202, 203, or may be disposed separately for each light emitting

element

201, 202, 203. The thickness of the capping layer 130 of the

light emitting elements

201, 202, 203 may be the same or different (for example, set corresponding to the wavelength of the color of each light emitting element). The thickness of each

capping layer

131, 132 is set to 20 nm to 150 nm, for example. In the illustrated example, a part of the first capping layer 131 is divided for each of the

light emitting elements

201, 202, and 203, and the thickness of the first capping layer 131 increases in the order of blue, green, and red. . The second capping layer 132 is disposed across the

light emitting elements

201, 202, and 203. 9A to 9D, the capping layer 130 has a stacked structure of the first capping layer 131 and the second capping layer 132, but the capping layer 130 may be composed of one layer. . The single capping layer 130 may be disposed across a plurality of pixels.

In one embodiment, the light absorbing layer 108 is disposed between the capping layer 130 and the sealing layer 106, as shown in FIG. 9A. In another embodiment, as shown in FIG. 9B, the light absorption layer 108 is disposed between the first sealing film 161 and the sealing planarization film 160. In yet another embodiment, as shown in FIG. 9C, the light absorption layer 108 is disposed between the sealing planarization film 160 and the second sealing film 162. In yet another embodiment, as shown in FIG. 9D, the light absorption layer 108 is disposed on the second sealing film 162 (sealing layer 106).

The present invention is not limited to the above embodiment, and various modifications are possible. For example, it can be replaced with a configuration that is substantially the same as the configuration described in the above embodiment, a configuration that exhibits the same operational effects, or a configuration that can achieve the same purpose.

In the scope of the idea of the present invention, those skilled in the art can conceive various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. For example, those in which the person skilled in the art has appropriately added, deleted, or changed the design of the above-described embodiments, or those in which processes have been added, omitted, or changed conditions are also included in the scope of the present invention As long as it is included in the scope of the present invention.

Claims

A substrate,
A plurality of pixels located on the substrate;
A lower electrode provided in each of the plurality of pixels;
A bank disposed between the adjacent lower electrodes and partitioning the plurality of pixels;
An organic material layer disposed on the lower electrode and the bank;
An upper electrode disposed on the organic material layer;
A light absorption layer disposed on the upper electrode;
In the light absorption layer, an absorption portion for absorbing light emitted from the organic material layer is formed in a portion overlapping the bank in plan view.
Organic EL display device.
The organic EL display device according to claim 1, wherein the light absorption layer includes a material having an absorption capability when irradiated with light, and the material has an absorption capability in the absorption portion.
The organic EL display device according to claim 2, wherein the material capable of absorbing light is a photochromic material.
The organic EL display device according to any one of claims 1 to 3, wherein the absorber absorbs substantially the entire visible light region.
4. The organic EL display device according to claim 1, wherein the absorber absorbs part or all of a wavelength within a range of 500 nm to 570 nm.
The organic EL display device according to claim 1, wherein the light absorption layer includes a plurality of layers, and the absorption portions are formed in the plurality of layers, respectively.
The organic EL display device according to claim 6, wherein the absorber formed in the plurality of layers absorbs light having different wavelengths.
The organic EL display device according to any one of claims 1 to 7, wherein an end portion of the bank and an end portion of the absorption portion are overlapped in a plan view.
The organic EL display device according to any one of claims 1 to 7, wherein the absorption unit is opposed to at least an end of the bank.
The organic EL display device according to any one of claims 1 to 7, wherein the absorbing portion is opposed to at least a central portion of the bank.
The organic EL display device according to claim 1, wherein the absorber covers the bank, and an end of the absorber faces an opening of the bank.
The organic EL display device according to claim 1, wherein a capping layer is provided between the upper electrode and the light absorption layer.
A substrate,
A plurality of pixels located on the substrate;
A lower electrode provided in each of the plurality of pixels;
A bank disposed between the adjacent lower electrodes and partitioning the plurality of pixels;
An organic material layer disposed on the lower electrode and the bank;
An upper electrode disposed on the organic material layer;
On the upper electrode, having a layer located across a plurality of pixels,
The layer has a first region and a second region having a smaller light transmittance than the first region,
The second region includes a portion overlapping the bank in plan view.
Organic EL display device.
The organic EL display device according to claim 13, wherein the pixel includes a light emitting region, and the first region includes a portion overlapping the light emitting region in plan view.
The first region overlaps a central portion of the light emitting region;
The organic EL display device according to claim 14, wherein the second region overlaps a central portion of an upper surface of the bank.
Forming a lower electrode corresponding to each of a plurality of pixels on a substrate;
Forming a bank that partitions the plurality of pixels between the adjacent lower electrodes on the substrate;
Forming an organic material layer on the lower electrode and the bank;
Forming an upper electrode on the organic material layer;
Forming a layer containing a material capable of absorbing light irradiation on the upper electrode;
Selectively irradiating light on a portion including a material having an absorption capability by the light irradiation in a portion overlapping the bank in a plan view;
including,
A method for manufacturing an organic EL display device.
By the light irradiation, the portion that overlaps the bank in the plan view forms an absorption portion in which the material having the absorption capability by the light irradiation has the absorption capability.
The manufacturing method of the organic electroluminescence display of Claim 16.
Further comprising disposing a mask material on the layer containing a material capable of absorbing light.
Performing the light irradiation using the mask material;
The manufacturing method of the organic electroluminescence display of Claim 16 or 17.
The method for manufacturing an organic EL display device according to claim 16, wherein the light irradiation is performed using a laser beam.