WO2019187162A1 - Display device production method and vapor deposition device - Google Patents

Abstract

In this invention, a vapor deposition device (100) is equipped with a restricting plate (60) for restricting the passing angle of materials emitted from each of vapor deposition sources (51, 52) in such a manner that the emission angle of the materials emitted from one of the vapor deposition sources is smaller than the emission angle of the other, and the vapor deposition region of one of the vapor deposition sources overlaps with a portion of the vapor deposition region of the other vapor deposition source. Among the vapor deposition sources and the restricting plate on one hand, and a film-forming substrate on the other, one is moved relative to the other along the alignment direction of the vapor deposition sources while performing the vapor deposition using this vapor deposition device (100).

Description

Display device manufacturing method and vapor deposition apparatus

The present invention relates to a display device manufacturing method and a vapor deposition apparatus.

In the light emitting element, a plurality of layers are laminated by vapor deposition. From the viewpoint of suppressing contamination, it is ideal to form each layer in a different vapor deposition chamber. However, if the number of stacked layers is large, the number of vapor deposition chambers increases and the manufacturing cost increases. For this reason, for example, when the first layer is a co-evaporation layer of the material A and the material B and the second layer is a single vapor deposition layer of only the material A, the vapor deposition of the material B is performed with a shutter at the time of vapor deposition of the single vapor deposition layer. By depositing only the material A while shielding the path, a plurality of layers are formed in one deposition chamber.

For example, Patent Document 1 includes a vapor deposition source that emits a light emitting dopant and a vapor deposition source that emits a host material / intermediate layer forming material, and forms an intermediate layer by closing all shutters for the light emitting dopant to emit light. A vapor deposition method using a vapor deposition apparatus that forms a light emitting layer by opening a shutter for a dopant and a shutter for a host material / intermediate layer forming material is disclosed.

International Publication No. 2006/009024 Pamphlet (released on January 26, 2006) "

However, when such a vapor deposition source is used, for example, by reciprocating the vapor deposition source, the co-deposition layer is formed in the forward path, and the single vapor deposition layer is formed in the return path. Since B is deposited on the bottom of the shutter, the material B is wasted on the return path. Further, as the amount of the material B deposited on the bottom of the shutter increases, there is a concern about the material peeling from the shutter.

A manufacturing method of a display device according to one embodiment of the present invention includes a first vapor deposition layer that is a co-deposition layer made of a material including a first material and a second material, the first material, and the second material. A method of manufacturing a display device having a laminate with a second vapor deposition layer made of a material containing any one of the materials, wherein the film deposition substrate is formed by depositing the material on the film deposition substrate. Including a vapor deposition step of forming the first vapor deposition layer and the second vapor deposition layer, wherein the vapor deposition step includes a first vapor deposition source that radiates the first material toward the film formation substrate, A plurality of vapor deposition sources including a second vapor deposition source that is arranged in parallel with the first vapor deposition source and emits the second material toward the deposition target substrate; the plurality of vapor deposition sources; and the film deposition target The plurality of vapor deposition sources are arranged in parallel with each other so that each vapor deposition source is sandwiched between the substrates. The radiation angle of the first material emitted from the first vapor deposition source is smaller than the radiation angle of the second material emitted from the second vapor deposition source, and the first material A plurality of limiting plates for limiting a passing angle of the material radiated from each vapor deposition source so that a vapor deposition region by the vapor deposition source overlaps a part of the vapor deposition region by the second vapor deposition source, the plurality of vapor deposition sources, and the plural Using a deposition apparatus comprising a moving mechanism for relatively moving one of the limiting plate and the deposition target substrate with respect to the other along a parallel direction of the plurality of deposition sources. By performing deposition while relatively moving one of the deposition source and the plurality of limiting plates and the deposition target substrate along one direction of the plurality of deposition sources with respect to the other, The first vapor deposition layer and the second vapor deposition layer are stacked.

A vapor deposition apparatus according to one embodiment of the present invention is arranged in parallel with a first vapor deposition source that radiates a first material toward a film formation substrate and the first vapor deposition source, and toward the film formation substrate. A plurality of vapor deposition sources including a second vapor deposition source that radiates a second material; and the plurality of vapor deposition sources so as to sandwich each vapor deposition source between the plurality of vapor deposition sources and the deposition target substrate. The radiation angle of the first material emitted from the first vapor deposition source is spaced from each other in the juxtaposed direction of the second material, and the radiation angle of the second material emitted from the second vapor deposition source A plurality of limiting plates for limiting the passage angle of the material emitted from each vapor deposition source so that the vapor deposition region by the first vapor deposition source overlaps a part of the vapor deposition region by the second vapor deposition source, At the time of vapor deposition of the first material and the second material, the plurality of vapor deposition sources, the plurality of limiting plates, and the substrate A moving mechanism for moving one of the film substrates relative to the other along the parallel direction of the plurality of vapor deposition sources, the plurality of vapor deposition sources, the plurality of limiting plates, and the film formation By performing deposition while moving one of the substrates relative to the other along one direction of the plurality of deposition sources, the first material and the second material are included. A first vapor deposition layer that is a co-deposition layer made of a material and a second vapor deposition layer made of a material containing one of the first material and the second material are stacked.

According to one embodiment of the present invention, it is possible to provide a method for manufacturing a display device and a vapor deposition apparatus that can suppress material loss as compared with the related art and can suppress material peeling from the shutter.

3 is a flowchart illustrating an example of a method for manufacturing a display device according to the first embodiment. FIG. 3 is a cross-sectional view illustrating a configuration of a display area of the display device according to the first embodiment. (A) is sectional drawing which shows typically the main component of the vapor deposition apparatus concerning Embodiment 1, (b) is the vapor deposition formed into a film on the film-forming substrate by the vapor deposition apparatus shown to (a). It is sectional drawing which shows an example of a layer. It is a perspective view which shows typically the main components in the vapor deposition chamber in the vapor deposition apparatus concerning Embodiment 1. FIG. It is a schematic diagram explaining the effect of a restriction | limiting board. (A) is sectional drawing which shows typically the main components in a vapor deposition chamber in the vapor deposition apparatus concerning Embodiment 2, (b) is on a film-forming substrate by the vapor deposition apparatus shown to (a). It is sectional drawing which shows an example of the vapor deposition layer formed into a film. (A) is sectional drawing which shows typically the main components in a vapor deposition chamber in the vapor deposition apparatus concerning Embodiment 3, (b) is on a film-forming substrate by the vapor deposition apparatus shown to (a). It is sectional drawing which shows an example of the vapor deposition layer formed into a film. (A) is sectional drawing which shows typically the main components in a vapor deposition chamber in the vapor deposition apparatus concerning Embodiment 4, (b) is formed on a film-forming substrate by the vapor deposition apparatus shown to (a). It is sectional drawing which shows an example of the vapor deposition layer formed into a film. (A) is sectional drawing which shows typically vapor deposition in the outward path concerning Embodiment 5, (b) is sectional drawing which shows typically vapor deposition in the return path concerning this Embodiment 5. FIG. (A) is sectional drawing which shows an example of the vapor deposition layer formed into a film on the to-be-deposited board | substrate after vapor deposition in the outward path | route shown to (a) of FIG. 9, (b) is (b) of FIG. It is sectional drawing which shows an example of the vapor deposition layer formed into a film on the to-be-film-formed board | substrate after vapor deposition in the return path | route shown in FIG. (A) is sectional drawing which shows typically vapor deposition in the outward path concerning Embodiment 6, (b) is sectional drawing which shows typically vapor deposition in the return path concerning this Embodiment 6. FIG. (A) is sectional drawing which shows an example of the vapor deposition layer formed into a film on the to-be-deposited board | substrate after vapor deposition in the outward path | route shown to (a) of FIG. 11, (b) is (b) of FIG. It is sectional drawing which shows an example of the vapor deposition layer formed into a film on the to-be-film-formed board | substrate after vapor deposition in the return path | route shown in FIG.

An embodiment of the present invention will be described in detail. In the following embodiments, members having the same functions as those described above are denoted by the same reference numerals, and the description thereof will not be repeated.

Embodiment 1
<Outline of display device configuration and manufacturing method>
FIG. 1 is a flowchart showing an example of a method for manufacturing the display device 2 according to the present embodiment. FIG. 2 is a cross-sectional view showing the configuration of the display area of the display device 2 according to the present embodiment. In the following description, “same layer” means formed in the same process (film formation step), and “lower layer” is formed in a process prior to the layer to be compared. This means that the “upper layer” is formed in a later process than the layer to be compared.

When the flexible display device 2 is manufactured, as shown in FIGS. 1 and 2, first, a resin layer 12 is formed on a translucent support substrate (for example, mother glass) (step S1). Next, the barrier layer 3 is formed (step S2). Next, the TFT layer 4 is formed (step S3). Next, the light emitting element layer 5 is formed (step S4). Next, the sealing layer 6 is formed (step S5). Next, an upper surface film is pasted on the sealing layer 6 (step S6).

Next, the support substrate is peeled off from the resin layer 12 by laser light irradiation or the like (step S7). Next, the lower film 10 is attached to the lower surface of the resin layer 12 (step S8). Next, the laminate including the lower film 10, the resin layer 12, the barrier layer 3, the TFT layer 4, the light emitting element layer 5, and the sealing layer 6 is divided to obtain a plurality of pieces (step S9). Subsequently, the functional film 39 is affixed on the obtained piece (step S10). Next, an electronic circuit board (for example, an IC chip and an FPC) is mounted on a part (terminal portion) outside (a non-display area, a frame) of the display area where the plurality of sub-pixels are formed (step S11). Steps S1 to S11 are performed by a display device manufacturing apparatus (including a film forming apparatus that performs each step of steps S1 to S5).

Examples of the material of the resin layer 12 include polyimide. The resin layer 12 may be replaced with a two-layer resin film (for example, a polyimide film) and an inorganic insulating film sandwiched between them.

The barrier layer 3 is a layer that prevents foreign matters such as water and oxygen from entering the TFT layer 4 and the light emitting element layer 5. For example, a silicon oxide film, a silicon nitride film, or an oxynitride formed by a CVD method is used. A silicon film or a laminated film thereof can be used.

The TFT layer 4 includes a semiconductor film 15, an inorganic insulating film 16 (gate insulating film) above the semiconductor film 15, a gate electrode GE and a gate wiring GH above the inorganic insulating film 16, and a gate electrode GE and An inorganic insulating film 18 above the gate wiring GH, a capacitive electrode CE above the inorganic insulating film 18, an inorganic insulating film 20 above the capacitive electrode CE, and a source wiring SH above the inorganic insulating film 20 And a planarizing film 21 (interlayer insulating film) that is an upper layer than the source wiring SH.

The semiconductor film 15 is made of, for example, low-temperature polysilicon (LTPS) or an oxide semiconductor (for example, an In—Ga—Zn—O-based semiconductor), and a transistor (TFT) is formed so as to include the semiconductor film 15 and the gate electrode GE. Is done. In FIG. 2, the transistor is shown with a top gate structure, but may have a bottom gate structure.

The gate electrode GE, the gate wiring GH, the capacitor electrode CE, and the source wiring SH are configured by, for example, a single layer film or a stacked film of a metal including at least one of aluminum, tungsten, molybdenum, tantalum, chromium, titanium, and copper. The The TFT layer 4 in FIG. 2 includes one semiconductor layer and three metal layers.

The inorganic insulating films 16, 18, and 20 can be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a stacked film thereof formed by a CVD method. The planarizing film 21 can be made of, for example, an applicable organic material such as polyimide or acrylic.

The light emitting element layer 5 includes an anode 22 above the planarizing film 21, an insulating edge cover 23 covering the edge of the anode 22, an EL (electroluminescence) layer 24 above the edge cover 23, and an EL layer 24 and a cathode 25 above the upper layer. The edge cover 23 is formed, for example, by applying an organic material such as polyimide or acrylic and then patterning by photolithography.

For each subpixel, a light emitting element ES (for example, OLED: organic light emitting diode, QLED: quantum dot light emitting diode) including the island-shaped anode 22, EL layer 24, and cathode 25 is formed in the light emitting element layer 5, and the light emitting element A sub-pixel circuit for controlling ES is formed in the TFT layer 4.

The EL layer 24 is configured as a functional layer by, for example, laminating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in order from the lower layer side. The light emitting layer is formed in an island shape, for example, in the opening (for each subpixel) of the edge cover 23 by an evaporation method or an ink jet method. The light emitting layer of the OLED is formed as a vapor deposition layer by a vapor deposition method using a vapor deposition mask. The light emitting layer of the QLED is formed by, for example, applying a solvent in which quantum dots are diffused by inkjet coating. The other functional layer is formed as an island-shaped or solid-shaped common layer by a vapor deposition method using a vapor deposition mask. A configuration in which one or more of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer are not formed, or a configuration in which another layer is formed is also possible. Note that a method for forming the EL layer 24 using a vapor deposition mask will be described in detail later.

The anode 22 is composed of, for example, a laminate of ITO (IndiumＩＴＯTin Oxide) and Ag (silver) or an alloy containing Ag, and has light reflectivity. The cathode (cathode) 25 can be made of a light-transmitting conductive material such as MgAg alloy (ultra-thin film), ITO, or IZO (Indium zinc Oxide).

When the light-emitting element ES is an OLED, holes and electrons are recombined in the light-emitting layer by the driving current between the anode 22 and the cathode 25, and light is emitted in the process in which the excitons generated thereby transition to the ground state. . When the cathode 25 is light-transmitting and the anode 22 is light-reflecting, the light emitted from the EL layer 24 is directed upward and becomes top emission. When the cathode 25 is light-reflective and the anode 22 is light-transmitting, the light emitted from the EL layer 24 is directed downward and becomes bottom emission.

When the light-emitting element ES is a QLED, holes and electrons are recombined in the light-emitting layer due to the drive current between the anode 22 and the cathode 25, and the excitons generated thereby are conduction band levels of the quantum dots. Light (fluorescence) is emitted in the process of transition from valence band level to valence band.

In the light emitting element layer 5, a light emitting element (inorganic light emitting diode or the like) other than the OLED and QLED may be formed.

The sealing layer 6 is translucent, and includes an inorganic sealing film 26 that covers the cathode 25, an organic buffer film 27 that is above the inorganic sealing film 26, and an inorganic sealing film 28 that is above the organic buffer film 27. Including. The sealing layer 6 covering the light emitting element layer 5 prevents penetration of foreign substances such as water and oxygen into the light emitting element layer 5.

Each of the inorganic sealing film 26 and the inorganic sealing film 28 is an inorganic insulating film, and is formed of, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a laminated film thereof formed by a CVD method. be able to. The organic buffer film 27 is a light-transmitting organic film having a flattening effect, and can be made of a coatable organic material such as acrylic. The organic buffer film 27 can be formed by, for example, inkjet coating, but a bank for stopping the liquid droplets may be provided in the non-display area.

The lower surface film 10 is, for example, a PET film for realizing a display device having excellent flexibility by being attached to the lower surface of the resin layer 12 after peeling the support substrate. The functional film 39 has, for example, at least one of an optical compensation function, a touch sensor function, and a protection function.

In the above description, the flexible display device has been described. However, in the case of manufacturing a non-flexible display device, it is generally unnecessary to form a resin layer, change the base material, etc. The stacking process of S2 to S5 is performed, and then the process proceeds to step S9.

As described above, in step S4 for forming the light emitting element layer 5, for example, the EL layer 24 is formed by a vapor deposition method using a vapor deposition mask. In the display device 2 according to the present embodiment, the EL layer 24 includes two or more vapor deposition layers as functional layers. Further, step S <b> 4 for forming the light emitting element layer 5 includes a vapor deposition process for forming a plurality of vapor deposition layers on the film formation substrate 200 by vapor deposition of a vapor deposition material on the film formation substrate 200.

<Schematic configuration of vapor deposition apparatus 100>
FIG. 3A is a cross-sectional view schematically showing main components of the vapor deposition apparatus 100 according to the present embodiment. FIG. 3B is a schematic view of the vapor deposition apparatus 100 shown in FIG. 3 is a cross-sectional view illustrating an example of a vapor deposition layer formed on a deposition target substrate 200. FIG. FIG. 4 is a perspective view schematically showing main components in the vapor deposition chamber 40 in the vapor deposition apparatus 100 according to the present embodiment.

In the following, the direction in which the vapor deposition sources 51 and 52 are arranged in the scanning direction of the deposition target substrate 200 on which the vapor deposition layer is formed (in other words, the movement direction of the vapor deposition sources 51 and 52 during vapor deposition) is defined as the Y direction. The horizontal direction perpendicular to the direction is defined as the X direction, the normal direction of the film formation surface 201 of the film formation substrate 200, and the vertical direction (vertical direction) perpendicular to the X direction and the Y direction is described as the Z direction.

As shown in FIG. 3A, the vapor deposition apparatus 100 includes a vapor deposition chamber 40 (vacuum chamber), vapor deposition sources 51 and 52, a plurality of limiting plates 60 and 60 ′, a cooling mechanism 65 (cooling unit), and a vapor deposition source moving. A mechanism 70, a vapor deposition mask 80, a substrate moving mechanism 90, and the like are provided. The vapor deposition sources 51 and 52, the plurality of limiting plates 60 and 60 ', the cooling mechanism 65, the vapor deposition source moving mechanism 70, the vapor deposition mask 80, and the substrate moving mechanism 90 are disposed in the vapor deposition chamber 40.

The deposition chamber 40 is provided with a vacuum pump (not shown) that evacuates the inside of the deposition chamber 40 through an exhaust port (not shown) provided in the deposition chamber 40.

The vapor deposition mask 80 is a plate-like object whose mask surface, which is the main surface, is parallel to the film formation surface 201 of the film formation substrate 200. The main surface of the vapor deposition mask 80 is provided with at least one opening 81 (mask opening). The opening 81 is a through-hole, and functions as a passing portion through which a vapor deposition material (materials 301 and 302) radiated as vapor deposition particles from the vapor deposition sources 51 and 52 passes during vapor deposition. A region other than the opening 81 in the vapor deposition mask 80 is a non-opening, and functions as a blocking portion that blocks the flow of the vapor deposition material during vapor deposition.

The opening 81 is provided corresponding to the pattern of each vapor deposition layer so that the vapor deposition material does not adhere to a region other than the target vapor deposition layer formation region in the deposition target substrate 200. Only the deposition material that has passed through the opening 81 adheres to the deposition target substrate 200, and a deposition layer having a pattern corresponding to the opening 81 is formed on the deposition target surface 201 of the deposition target substrate 200.

When the light emitting layer of the OLED is formed by vapor deposition, for example, an FMM (fine metal mask) is used as the vapor deposition mask 80. The FMM is a sheet-like mask having a plurality of openings 81, and an island-shaped light emitting layer (corresponding to one subpixel) is formed by an organic material that has passed through one opening 81. On the other hand, in the vapor deposition formation of the functional layers other than the light emitting layer, an open mask such as FMM or CMM (common metal) is used as the vapor deposition mask 80. The open mask is a sheet-like mask having one opening 81 in the light emitting region, and a solid functional layer common to all sub-pixels is formed by the vapor deposition material that has passed through the opening 81. When the OLED is a white light emitting type or when a common light emitting layer common to a plurality of sub-pixels is formed, the deposition mask 80 corresponds to an open mask such as a CMM or a plurality of sub-pixels. A vapor deposition mask having an opening is used.

As these vapor deposition masks 80, for example, a metal mask such as Invar material, a resin mask, or a composite mask having a metal layer and a resin layer is used.

The vapor deposition sources 51 and 52 are juxtaposed in the Y direction so as to face the film formation substrate 200 through the vapor deposition mask 80. The vapor deposition sources 51 and 52 heat the vapor deposition material to evaporate (when the vapor deposition material is a liquid material) or sublimate (when the vapor deposition material is a solid material), thereby converting the vapor deposition material into gaseous vapor deposition particles. Radiate. The vapor deposition sources 51 and 52 are disposed, for example, below the film formation substrate 200 at a predetermined distance from the film formation substrate 200 so as to face the film formation surface 201 of the film formation substrate 200. .

The vapor deposition sources 51 and 52 emit different materials. The vapor deposition source 51 (first vapor deposition source) heats the material 301 (first material) as a vapor deposition material and emits it as vapor deposition particles. The vapor deposition source 52 (second vapor deposition source) heats the material 302 (second material) as a vapor deposition material and emits it as vapor deposition particles. The vapor deposition source 51 has a radiation port 51 a that radiates the material 301 on the surface facing the deposition target substrate 200. The vapor deposition source 52 has a radiation port 52 a that radiates the material 302 on the surface facing the deposition target substrate 200.

The evaporation sources 51 and 52 are evaporation sources called a line source or a linear source, and have a shape in which the length in the X direction is longer than the width in the Y direction. A plurality of radiation openings 51a and 52a are arranged in the X direction.

The vapor deposition sources 51 and 52 have, for example, a container for storing the vapor deposition material and a heating member inside, and may directly store the vapor deposition material inside the container, have a load lock type pipe, and from the outside. You may form so that vapor deposition material may be supplied.

The limiting plates 60 and 60 ′ are disposed above the deposition sources 51 and 52 (that is, between the deposition target substrate 200 and the deposition mask 80 and the deposition sources 51 and 52) so as to sandwich the respective deposition sources 51 and 52. They are separated from each other in the Y direction. The limiting plates 60 and 60 ′ limit the passage angle of the vapor deposition material radiated from the vapor deposition sources 51 and 52, thereby limiting the removal of unnecessary components of the vapor deposition material and the vapor deposition angle on the deposition target substrate 200. . The limiting plates 60 and 60 ′ may be directly connected to the vapor deposition sources 51 and 52, or may be provided apart from the vapor deposition sources 51 and 52.

FIG. 5 is a schematic diagram for explaining the effect of the limiting plates 60 and 60 '. FIG. 5 illustrates the vapor deposition source 51 and the material 301 emitted from the vapor deposition source 51 as an example of the vapor deposition source and the vapor deposition material. Although not shown, the same effects as those shown in FIG. 5 can be obtained for the vapor deposition source 52 and the material 302 emitted from the vapor deposition source 52.

As shown in FIG. 5, the material 301 radiated from the vapor deposition source 51 passes through the opening 61 (restriction plate opening) between the respective restriction plates 60 and 60 ′, and then the opening formed in the vapor deposition mask 80 (not shown). It passes through the part 81 and is deposited on the deposition target substrate 200.

The limiting plates 60 and 60 ′ capture (attach) at least a part of the material 301 that has collided with the limiting plates 60 and 60 ′, and the like, so that the vapor deposition sources 51 and 52 are arranged in parallel (that is, the Y direction). Restricts the passage of vapor deposition materials (unnecessary components) with poor directivity.

Generally, the amount of radiation of the vapor deposition material radiated from the vapor deposition source is most directly above the vapor deposition source, and the distribution conforms to the cosine law. Components with a shallow (low) deposition angle increase the risk of color mixing due to mask shadows. The limiting plates 60 and 60 ′ set the incident angle of the vapor deposition material incident on the opening 81 of the vapor deposition mask 80 so that the vapor deposition material having a shallow vapor deposition angle does not reach the deposition target substrate 200. It is limited to an angle equal to or greater than the shadow critical angle, which is the critical angle at which no shadows occur. Thereby, the limiting plates 60 and 60 ′ limit the deposition angle θ in the Y direction with respect to the deposition target substrate 200 within a certain range, as shown in FIG. 5.

The limiting plates 60 and 60 ′ capture the unnecessary components by the limiting plates 60 and 60 ′ and prevent the supplemented unnecessary components from vaporizing again. It is desirable to have a low temperature. Therefore, it is desirable that the restriction plates 60 and 60 'be provided with a cooling mechanism 65 for cooling the restriction plates 60 and 60' as shown in FIG. As described above, the vapor deposition material colliding with the limiting plates 60 and 60 ′ is attached to and captured by the limiting plates 60 and 60 ′, thereby preventing collision and scattering between the vapor deposition materials.

Further, the limiting plates 60 and 60 ′ thus limit the vapor deposition angle θ in the Y direction with respect to the deposition target substrate 200 within a certain range, so that as shown in FIG. The deposition area by the deposition source 51 (deposition range, that is, the area where the material 301 radiated from the deposition source 51 is deposited) is limited (defined) and the deposition area by the deposition source 52 (deposition range, that is, the deposition source). The region where the material 302 emitted from 52 is deposited is limited.

In the present embodiment, the limiting plates 60 and 60 ′ are configured so that the radiation angle of the material 301 radiated from the vapor deposition source 51 is smaller than the radiation angle of the material 302 radiated from the vapor deposition source 52. Limit the passing angle of the materials 301 and 302 emitted from 52. Thus, the vapor deposition region of the material 301 by the vapor deposition source 51 overlaps a part of the vapor deposition region of the material 302 by the vapor deposition source 52, so that the co-deposition layer made of the material 301 and the material 302 is formed on the deposition target substrate 200. , A single vapor deposition layer made of the material 302 is laminated. Here, the radiation angle of the material 301 radiated from the vapor deposition source 51 indicates an angle formed by the radiation trajectory of the material 301 with respect to the direction of the radiation port 51a of the vapor deposition source 51 (Z direction in the present embodiment). . Similarly, the radiation angle of the material 302 radiated from the vapor deposition source 52 indicates an angle formed by the radiation trajectory of the material 302 with respect to the direction of the radiation port 52a of the vapor deposition source 52 (Z direction in the present embodiment).

As the material of the limiting plates 60 and 60 ', for example, stainless steel such as SUS304 having a high heat-resistant temperature and excellent workability and weldability is used. However, the material of the limiting plates 60 and 60 'is not limited to this, and various alloys, metals, and the like can be used as the material.

The vapor deposition source moving mechanism 70 includes a holding member 71 that holds the vapor deposition sources 51 and 52 and the limiting plates 60 and 60 ', and a drive unit (not shown). In the holding member 71, the radiation ports 51 a and 52 a of the vapor deposition sources 51 and 52, the longitudinal end surfaces of the restricting plates 60 and 60 ′, and the opening 61 between the restricting plates 60 and 60 ′ face the film formation substrate 200. At the same time, the vapor deposition sources 51 and 52 and the limiting plates 60 and 60 ′ are held so that the limiting plates 60 and 60 ′ are adjacent to each other in the Y direction. The vapor deposition source moving mechanism 70 moves the vapor deposition sources 51 and 52 and the limiting plates 60 and 60 'in the horizontal direction by a driving unit (not shown). If the vapor deposition source moving mechanism 70 is provided so as to be able to reciprocate along the parallel direction (Y direction) of the vapor deposition sources 51 and 52 as shown by arrows in FIGS. Any of these may be provided so as to be movable, or may be provided so as to be movable only in the Y direction.

The holding member 71 may be a support base on which the vapor deposition sources 51 and 52 to which the limiting plates 60 and 60 ′ are directly connected are mounted. The vapor deposition sources 51 and 52 are mounted, and the vapor deposition sources 51 and 52 are mounted. It may be a support base having a frame-like shelf portion that supports the restriction plates 60 and 60 'in a state where the relative position between and is fixed. Further, the drive unit may include, for example, a linear motor or the like, and may include a ball screw and a servo motor.

The substrate moving mechanism 90 includes, for example, a holding member 91 that holds the deposition target substrate 200, a drive unit (not shown), and the like. The holding member 91 holds the deposition target substrate 200 so that the deposition target surface 201 of the deposition target substrate 200 faces the deposition sources 51 and 52 while vapor deposition is performed. For example, the holding member 91 may be configured to hold the vapor deposition mask 80 together with the deposition target substrate 200. The holding member 91 may include a magnetic force generation source (not shown) such as a magnet or an electromagnet that holds the film formation substrate 200 together with the vapor deposition mask 80 in a state where the vapor deposition mask 80 is in contact with the film formation substrate 200. Alternatively, a frame body that holds the deposition target substrate 200 and the vapor deposition mask 80 in an overlapping manner may be provided.

The substrate moving mechanism 90 moves the film formation substrate 200 and the vapor deposition mask 80 in the horizontal direction by a driving unit (not shown). The substrate moving mechanism 90 may be provided so as to be movable in both the Y direction and the X direction as long as the substrate moving mechanism 90 is provided so as to reciprocate along the direction in which the vapor deposition sources 51 and 52 are arranged side by side (Y direction). , May be provided to be movable only in the Y direction. Various known movement mechanisms can be used for the substrate movement mechanism 90.

In the present embodiment, by driving one of the evaporation source moving mechanism 70 and the substrate moving mechanism 90, the evaporation sources 51 and 52, the plurality of limiting plates 60 and 60 ′, and the film formation are performed during the evaporation of the evaporation material. One of the substrates 200 is moved relative to the other along the Y direction. As shown in FIGS. 3A and 4, when the vapor deposition mask 80 has a size equal to or larger than the deposition target substrate 200 (for example, the same size), the vapor deposition source 51. One of the 52 and the plurality of limiting plates 60 and 60 ′, the deposition target substrate 200, and the vapor deposition mask 80 is moved relative to the other along the Y direction. On the other hand, although not shown, when the vapor deposition mask 80 is smaller than the deposition target substrate 200, the relative position of the vapor deposition mask 80 with the vapor deposition sources 51 and 52 and the limiting plates 60 and 60 ′ is fixed. . For this reason, one of the deposition sources 51 and 52, the plurality of limiting plates 60 and 60 ', the deposition mask 80, and the deposition target substrate 200 is moved relative to the other along the Y direction. For this reason, at least one of the deposition source moving mechanism 70 and the substrate moving mechanism 90 may be provided. Only one of the vapor deposition source moving mechanism 70 and the substrate moving mechanism 90 may be provided, and a fixing member for fixing the holding member 71 or the holding member 91 in the vapor deposition chamber 40 may be provided instead.

<Deposition process>
Next, the vapor deposition method (vapor deposition process) used by the vapor deposition apparatus 100 will be described below with reference to FIGS. In the following, in the state where the deposition target substrate 200 and the vapor deposition mask 80 are fixed in the vapor deposition chamber 40, the reciprocating path of the vapor deposition sources 51 and 52 indicated by arrows in FIG. The case where vapor deposition is performed on the deposition target substrate 200 in the forward path) will be described as an example.

When the film formation substrate 200 is carried into the vapor deposition chamber 40, alignment adjustment between the film formation substrate 200 and the vapor deposition mask 80 is performed by the substrate moving mechanism 90, and the film formation substrate 200 and the vapor deposition mask 80 are moved. , And held by the holding member 91 in close contact with each other. At this time, the deposition target substrate 200 and the deposition mask 80 are, for example, a deposition target surface so that the deposition target surface 201 of the deposition target substrate 200 faces the deposition sources 51 and 52 through the deposition mask 80. It is held by the holding member 91 with 201 facing down.

Next, the vapor deposition source moving mechanism 70 causes the vapor deposition sources 51 and 52 and the limiting plates 60 and 60 ′ to be arranged side by side with respect to the deposition target substrate 200 and the vapor deposition mask 80 (Y direction). The material 301 radiated from the vapor deposition source 51 and the material 302 radiated from the vapor deposition source 52 are moved relative to each other in one direction (first direction) along the apertures 61 and 60 ′ of the limiting plates 60 and 60 ′. The film is deposited on the deposition target substrate 200 through the opening 81 of the vapor deposition mask 80.

In the present embodiment, as described above, the radiation angle of the material 301 radiated from the vapor deposition source 51 is smaller than the radiation angle of the material 302 radiated from the vapor deposition source 52 by the limiting plates 60 and 60 ′. The passage angle of the materials 301 and 302 emitted from the respective vapor deposition sources 51 and 52 is limited so that the vapor deposition region of the material 301 by 51 overlaps a part of the vapor deposition region of the material 302 by the vapor deposition source 52. Accordingly, in the present embodiment, the forward direction (in other words, scanning) in which the vapor deposition sources 51 and 52 and the limiting plates 60 and 60 ′ are moved relative to the deposition target substrate 200 and the vapor deposition mask 80 in the first direction. The vapor deposition area by the vapor deposition sources 51 and 52 is divided into a co-deposition area where the material 301 and the material 302 are co-evaporated and a single vapor deposition area where the material 302 is vapor-deposited alone (single vapor deposition). To do.

As a result, according to the present embodiment, as shown in FIG. 3B, the vapor deposition layer 311 that is a co-deposition layer formed by co-deposition of the material 301 and the material 302 and the material 302 are only formed in the forward path. A laminated body with the vapor deposition layer 312 which is a vapor-deposited single vapor deposition layer can be formed.

In the present embodiment, the restriction plates 60 and 60 ′, as an example, as shown in FIG. 3A, 1/3 of the outward path is a co-deposition region of the material 301 and the material 302, and the outward path The vapor deposition area by the vapor deposition sources 51 and 52 is partitioned so that 2/3 of the above becomes a single vapor deposition area of the material 302. Further, the vapor deposition sources 51 and 52 are arranged so that the vapor deposition source 51 is positioned in front of the forward path (that is, downstream in the scanning direction) and the vapor deposition source 52 is positioned in the rearward path (that is, upstream in the scanning direction). For this reason, the vapor deposition source 51 reaches below the deposition target substrate 200 before the vapor deposition source 52 when the vapor deposition sources 51 and 52 are moved in the first direction.

Therefore, as illustrated in FIG. 3B, the vapor deposition layer 311 has a vapor deposition layer containing at least one of the material 301 and the material 302 on the deposition target substrate 200 first (that is, on the lower layer side). Then, the vapor deposition layer 312 is formed on the vapor deposition layer 311 with a thickness that is 2/3 of the total film thickness of the vapor deposition layers 311 and 312.

In this embodiment, vapor deposition is performed on the deposition target substrate 200 only by the reciprocating path (scanning path) of the vapor deposition sources 51 and 52. For this reason, after vapor deposition onto the film formation substrate 200 is performed in the outward path, the vapor deposition sources 51 and 52 and the limiting plates 60 and 60 ′ are returned to their original positions (initial positions) by the vapor deposition source moving mechanism 70. In the present embodiment, in the return path, only the deposition sources 51 and 52 and the limiting plates 60 and 60 'are moved, and deposition is not performed.

As described above, according to the present embodiment, since a plurality (two layers) of vapor deposition layers 311 and 312 can be formed only by the outward path, the tact does not decrease. Moreover, according to this embodiment, when forming the vapor deposition layer 312 which is a single vapor deposition layer, it is not necessary to close a shutter and the material loss by that and the material peeling from a shutter do not arise. Therefore, according to the present embodiment, it is possible to provide a method for manufacturing the display device 2 and a vapor deposition apparatus 100 that can suppress material loss and tact reduction as compared with the related art and can prevent material peeling from the shutter. Can do.

The materials 301 and 302 are not particularly limited as long as they are different from each other. The combination of the materials 301 and 302 is not particularly limited, and examples thereof include a combination in which the material 301 is a light emitting dopant material and the material 302 is a hole transporting or electron transporting host material. In this case, for example, a light-emitting layer can be formed as a co-evaporation layer, and a hole transport layer or an electron transport layer can be formed as a single vapor deposition layer. Further, when the materials 301 and 302 are different hole transport materials, for example, a hole injection layer can be formed as a co-evaporation layer, and a hole transport layer can be formed as a single vapor deposition layer. Or for example, while forming a positive hole transport layer as a co-evaporation layer, an electron blocking layer can be formed as a single vapor deposition layer. When the materials 301 and 302 are different electron transport materials, for example, an electron transport layer can be formed as a co-deposition layer, and an electron injection layer can be formed as a single deposition layer. Alternatively, for example, a hole blocking layer can be formed as a co-evaporation layer, and an electron transport layer can be formed as a single vapor deposition layer. In addition, when the EL layer 24 has a bipolar transporting layer having high hole transporting properties and electron transporting properties, such as a separate layer that inhibits the Forster transition, for example, hole transport is performed on one of the materials 301 and 302. By using a conductive material and an electron transporting material on the other side, a bipolar transporting layer can be formed as a co-deposition layer, and a hole transporting layer or an electron transporting layer can be formed as a single deposition layer.

Further, the protrusion height of the limiting plates 60 and 60 ′ from the upper surface of the vapor deposition source 51 and 52 (hereinafter referred to as “the height of protrusion from the vapor deposition source”) or simply “the protrusion”, with the upper surface of the vapor deposition source 51 and 52 as the reference plane. The height is referred to as “evaporation source-substrate distance (hereinafter referred to as“ T / S ”), the required deposition area width, and the like. It is desirable that it is in the range of several hundred mm, preferably in the range of 10 mm to 200 mm. If the protrusion height is less than 10 mm, the radiation angle is not sufficiently limited, and there is an increased concern about color mixing due to mask shadows. On the other hand, if the protruding height exceeds 200 mm, trapping of vapor deposition particles ( materials 301 and 302 radiated from the vapor deposition sources 51 and 52) by the limiting plates 60 and 60 'increases, and material utilization efficiency deteriorates.

Further, the separation distance between the vapor deposition sources 51 and 52 and the limiting plates 60 and 60 ′ is not uniquely determined for the same reason as the protrusion height, but is preferably in the range of several tens mm to several hundred mm. It is desirable to be within a range of 20 mm to 100 mm. When the separation distance is less than 20 nm, trapping of vapor deposition particles by the limiting plates 60 and 60 'increases, and material utilization efficiency deteriorates. Moreover, when the said separation distance exceeds 100 mm, the radiation angle of vapor deposition particle | grains is not fully restrict | limited, and the color mixing concern by a mask shadow increases.

Further, in order to achieve the above-described configuration, in the present embodiment, as shown in FIG. 3A, a limiting plate 60 and a limiting plate 60 'are used. Of the limiting plates 60 and 60 ′ shown in FIG. 3A, the protruding height of the central limiting plate 60 ′ is lower than the other two limiting plates 60. Further, the separation distance between the restriction plate 60 on the left side of the vapor deposition source 52 and the vapor deposition source 52 is the separation distance between the restriction plate 60 ′ and the vapor deposition source 52, the separation distance between the restriction plate 60 ′ and the vapor deposition source 51, and the vapor deposition. The limiting plate 60 on the left side of the source 51 and the vapor deposition source 51 were arranged so as to be longer than the separation distance. Note that the protruding height of the limiting plates 60 and 60 ′ and the arrangement of the limiting plates 60 and 60 ′ are examples, and the present embodiment is not limited to this. By disposing the limiting plate 60 ′ having a low protrusion height from the vapor deposition source between the two limiting plates 60 having a high protrusion height from the vapor deposition source, the desired layer, in this embodiment, the vapor deposition layer 312 is formed. The film thickness can be increased.

[Embodiment 2]
In the present embodiment, only the differences from the previous embodiment will be described and illustrated. That is, the configuration of the display device 2 and the vapor deposition apparatus 100 and the manufacturing method of the display device 2 according to the present embodiment are the same as those of the first embodiment except for the following points.

6A is a cross-sectional view schematically showing main components in the vapor deposition chamber 40 in the vapor deposition apparatus 100 according to this embodiment, and FIG. 6B is a cross-sectional view of FIG. It is sectional drawing which shows an example of the vapor deposition layer formed into a film by the vapor deposition apparatus 100 shown in FIG.

In the present embodiment, each deposition source 51 is configured so that the radiation angle of the material 302 radiated from the deposition source 52 is smaller than the radiation angle of the material 301 radiated from the deposition source 51 by the limiting plates 60 and 60 ′. Limit the passing angle of the materials 301 and 302 emitted from 52. As a result, the deposition region of the material 302 by the deposition source 52 overlaps with a part of the deposition region of the material 301 by the deposition source 51. Therefore, in the present embodiment, the vapor deposition area by the vapor deposition sources 51 and 52 is divided into a single vapor deposition area where the material 301 is vapor-deposited, and a co-vapor deposition area where the material 301 and the material 302 are vapor-deposited in the scanning forward direction. Divide into and.

As a result, according to the present embodiment, as shown in FIG. 6B, the vapor deposition layer 313, which is a single vapor deposition layer obtained by single vapor deposition of the material 301, and the material 301 and the material 302 are shared in the forward path only. A laminated body with the vapor deposition layer 311 which is a co-deposition layer formed by vapor deposition can be formed.

In addition, the vapor deposition apparatus 100 according to the present embodiment uses the limiting plates 60 and 60 ′ as an example, as shown in FIG. The vapor deposition regions by the vapor deposition sources 51 and 52 are partitioned so that 3/4 of the forward path is a co-vapor deposition region of the material 301 and the material 302. For this reason, as shown in FIG. 3B, the vapor deposition layer 313 is formed on the deposition target substrate 200 first (that is, on the lower layer side) 1 / of the total film thickness of the vapor deposition layers 313 and 311. Then, a vapor deposition layer 311 is formed on the vapor deposition layer 313 with a thickness of 3/4 of the total film thickness of the vapor deposition layers 313 and 311.

As described above, according to the present embodiment, the same effects as those of the first embodiment can be obtained, and by changing the arrangement and height of the restriction plates 60 and 60 ′, the types of the materials 301 and 302, and the like, A desired laminated structure can be formed.

In the present embodiment, the limiting plate 60 and the limiting plate 60 'are used as shown in FIG. 6A in order to achieve the above-described configuration. Among the limiting plates 60 and 60 ′ shown in FIG. 6A, the protruding height of the central limiting plate 60 ′ is lower than the other two limiting plates 60. Further, the separation distance between the restriction plate 60 on the left side of the vapor deposition source 52 and the vapor deposition source 52 and the separation distance between the restriction plate 60 on the right side of the vapor deposition source 51 and the vapor deposition source 51 are arranged to be approximately the same. Note that the protruding height of the restriction plates 60 and 60 ′ and the arrangement of the restriction plates 60 and 60 ′ are examples, and the present embodiment is not limited to this. By disposing the limiting plate 60 ′ having a low protrusion height from the vapor deposition source between the two limiting plates 60 having a high protrusion height from the vapor deposition source, a desired layer, in this embodiment, the vapor deposition layer 311 is formed. The film thickness can be increased.

[Embodiment 3]
In the present embodiment, only the differences from the previous embodiment will be described and illustrated. FIG. 7A is a cross-sectional view schematically showing main components in the vapor deposition chamber 40 in the vapor deposition apparatus 100 according to this embodiment, and FIG. 7B is a cross-sectional view of FIG. It is sectional drawing which shows an example of the vapor deposition layer formed into a film by the vapor deposition apparatus 100 shown in FIG.

The vapor deposition apparatus 100 may include three or more vapor deposition sources. When the vapor deposition apparatus 100 includes three or more vapor deposition sources, at least two of the vapor deposition materials emitted from the respective vapor deposition sources are different materials.

The vapor deposition apparatus 100 according to the present embodiment further includes a vapor deposition source 52 ′ that radiates a material 302 in addition to the vapor deposition sources 51 and 52 as shown in FIG. That is, the vapor deposition apparatus 100 according to the present embodiment includes one vapor deposition source 51 that radiates the material 301 and two vapor deposition sources 52 and 52 ′ as vapor deposition sources that radiate the material 302. . The vapor deposition source 52 ′ has a radiation port 52 a ′ that radiates the material 302 on the surface facing the deposition target substrate 200. The vapor deposition source 51, the vapor deposition source 52, and the vapor deposition source 52 'are provided in this order from the forward path forward side (downstream in the scanning direction).

The holding member 71 in the vapor deposition source moving mechanism 70 holds these vapor deposition sources 51, 52, and 52 '. The limiting plates 60 and 60 'are provided above the vapor deposition sources 51, 52, and 52' so as to be separated from each other in the Y direction so as to sandwich the vapor deposition sources 51, 52, and 52 '. For this reason, the limiting plates 60 and 60 ′ limit the passage angle of the vapor deposition material radiated from the vapor deposition sources 51, 52, and 52 ′, thereby removing unnecessary components of the vapor deposition material and forming the deposition target substrate 200. The deposition angle is limited. The limiting plates 60 and 60 ′ may be directly connected to the vapor deposition sources 51, 52 and 52 ′, or may be provided apart from the vapor deposition sources 51, 52 and 52 ′.

In the present embodiment, the limiter plates 60 and 60 ′ allow the radiation angle of the material 301 radiated from the vapor deposition source 51 and the radiation angle of the material 302 radiated from the vapor deposition source 52 ′ to be the material 302 radiated from the vapor deposition source 52. The passage angle of the materials 301 and 302 radiated from the respective vapor deposition sources 51, 52 and 52 ′ is limited so as to be smaller than the radiation angle. Accordingly, the deposition region of the material 301 by the deposition source 51 and the deposition region of the material 302 by the deposition source 52 ′ overlap with a part of the deposition region of the material 302 by the deposition source 52. Therefore, in the present embodiment, the vapor deposition region by the vapor deposition sources 51, 52, and 52 ′, the co-deposition region in which the material 301 and the material 302 are co-deposited, and the material 302 are vapor-deposited alone (in the single direction of scanning) It is divided into single vapor deposition areas to be vapor deposited).

As a result, according to the present embodiment, as shown in FIG. 7B, the vapor deposition layer 311 that is a co-deposition layer formed by co-evaporation of the material 301 and the material 302 and the material 302 are simply formed as shown in FIG. A laminated body with the vapor deposition layer 312 which is a vapor-deposited single vapor deposition layer can be formed.

Note that the vapor deposition apparatus 100 according to the present embodiment uses the limiting plates 60 and 60 ′ as an example, as shown in FIG. 7A, half of the forward path is the co-vapor deposition of the material 301 and the material 302. The vapor deposition region by the vapor deposition sources 51, 52, and 52 ′ is partitioned so that the remaining half of the forward path is a single vapor deposition region of the material 302 emitted from the vapor deposition sources 52 and 52 ′. . For this reason, as shown in FIG. 7B, on the deposition target substrate 200, the vapor deposition layer 311 is first (that is, on the lower layer side) 1 / of the total film thickness of the vapor deposition layers 311 and 312. Then, the vapor deposition layer 312 is formed on the vapor deposition layer 311 with a thickness of 2/3 of the total film thickness of the vapor deposition layers 311 and 312.

Thus, for example, if the deposition layer 312 does not reach the desired film thickness when only one deposition source 52 radiates the material 302, the two deposition sources radiate the material 302 as described above. By providing, a desired film thickness can be achieved. Note that, in this embodiment, the case where two evaporation sources that radiate the material 302 are provided has been described as an example. However, a material emitted from a plurality of evaporation sources that are prepared is not limited to the above material. Further, the number of vapor deposition sources to be prepared is not limited to two.

In the present embodiment, in order to achieve the above-described configuration, a limiting plate 60 and a limiting plate 60 'are used as shown in FIG. Of the limiting plates 60 and 60 ′ shown in FIG. 7A, the projecting height of the central two limiting plates 60 ′ is lower than the two limiting plates 60 at both ends. Further, the distance between the left limit plate 60 and the vapor deposition source 52 ′ of the vapor deposition source 52 ′ and the distance between the right limit plate 60 and the vapor deposition source 51 of the vapor deposition source 51 are arranged to be approximately the same. did. Note that the protruding height of the restriction plates 60 and 60 ′ and the arrangement of the restriction plates 60 and 60 ′ are examples, and the present embodiment is not limited to this. In the present embodiment, the protrusion height refers to the protrusion height from the upper surface of the vapor deposition source 51, 52, 52 ′ with the upper surface of the vapor deposition source 51, 52, 52 ′ as the reference surface (the protrusion height from the vapor deposition source). ). By disposing the limiting plate 60 ′ having a low protrusion height from the vapor deposition source between the two limiting plates 60 having a high protrusion height from the vapor deposition source, the desired layer, in this embodiment, the vapor deposition layer 312 is formed. The film thickness can be increased.

[Embodiment 4]
In the present embodiment, only the differences from the previous embodiment will be described and illustrated. FIG. 8A is a cross-sectional view schematically showing main components in the vapor deposition chamber 40 in the vapor deposition apparatus 100 according to this embodiment, and FIG. 8B is a cross-sectional view of FIG. It is sectional drawing which shows an example of the vapor deposition layer formed into a film by the vapor deposition apparatus 100 shown in FIG.

As shown in FIG. 8A, the vapor deposition apparatus 100 according to this embodiment is a vapor deposition source 53 that emits a material 303 instead of the vapor deposition source 52 ′ in the vapor deposition apparatus 100 shown in FIG. It has. The vapor deposition source 53 has a radiation port 53 a that radiates the material 303 on the surface facing the deposition target substrate 200.

In the vapor deposition apparatus 100 according to the present embodiment, a vapor deposition source 51, a vapor deposition source 52, and a vapor deposition source 53 are provided as vapor deposition sources in this order from the forward path front side (downstream in the scanning direction). The holding member 71 in the vapor deposition source moving mechanism 70 holds these vapor deposition sources 51, 52, and 53. The limiting plates 60 and 60 ′ are provided above the vapor deposition sources 51, 52, and 53 so as to be separated from each other in the Y direction so as to sandwich the vapor deposition sources 51, 52, and 53. For this reason, the limiting plates 60 and 60 ′ limit the passage angle of the vapor deposition material radiated from the respective vapor deposition sources 51, 52, and 53, thereby removing unnecessary components of the vapor deposition material and applying them to the deposition target substrate 200. Limit the deposition angle. The limiting plates 60, 60 'may be directly connected to the vapor deposition sources 51, 52, 53, or may be provided apart from the vapor deposition sources 51, 52, 53.

In the present embodiment, the limiting plates 60 and 60 ′ allow the radiation angle of the material 301 radiated from the vapor deposition source 51 and the radiation angle of the material 303 radiated from the vapor deposition source 53 to be different from those of the material 302 radiated from the vapor deposition source 52. The passing angle of the materials 301, 302, and 303 radiated from the respective vapor deposition sources 51, 52, and 53 is limited so as to be smaller than the radiation angle. Thereby, the vapor deposition region of the material 301 by the vapor deposition source 51 and the vapor deposition region of the material 303 by the vapor deposition source 53 overlap with a part of the vapor deposition region of the material 302 by the vapor deposition source 52. Accordingly, in the present embodiment, in the scanning forward direction, the vapor deposition regions by the vapor deposition sources 51, 52, and 53 are co-deposited, the material 301 and the material 302 are co-deposited, and the material 302 and the material 303 are co-deposited. It is divided into a co-evaporation region.

As a result, according to the present embodiment, as shown in FIG. 8B, the vapor deposition layer 311, which is a co-deposition layer formed by co-deposition of the material 301 and the material 302, and the material 302 and the material only in the outward path. A laminate with the vapor deposition layer 314 which is a co-deposition layer formed by co-evaporation of 303 can be formed.

Note that the vapor deposition apparatus 100 according to the present embodiment uses the limiting plates 60 and 60 ′ as an example, as shown in FIG. 8A, half of the forward path is the co-vapor deposition of the material 301 and the material 302. This is a region, and the vapor deposition regions by the vapor deposition sources 51, 52, and 53 are partitioned so that the remaining half of the forward path is a co-vapor deposition region of the material 302 and the material 303. For this reason, as shown in FIG. 8B, on the deposition target substrate 200, the vapor deposition layer 311 is first (that is, on the lower layer side) 1 / of the total film thickness of the vapor deposition layers 311 and 314. Then, a vapor deposition layer 314 is formed on the vapor deposition layer 311 with a thickness of ½ of the total film thickness of the vapor deposition layers 311 and 314.

In the present embodiment, the limiting plate 60 and the limiting plate 60 ′ are used as shown in FIG. 8A in order to achieve the above-described configuration. Of the limiting plates 60 and 60 ′ shown in FIG. 8A, the projecting height of the central two limiting plates 60 ′ is lower than the two limiting plates 60 at both ends. Further, the separation distance between the restriction plate 60 on the left side of the vapor deposition source 53 and the vapor deposition source 53 and the separation distance between the restriction plate 60 on the right side of the vapor deposition source 51 and the vapor deposition source 51 are arranged to be approximately the same. Such protruding heights of the restriction plates 60 and 60 'and the arrangement of the restriction plates 60 and 60' are examples, and the present embodiment is not limited to this. In the present embodiment, the protrusion height is a protrusion height from the upper surface of the vapor deposition source 51, 52, 53 (protrusion height from the vapor deposition source) with the upper surface of the vapor deposition source 51, 52, 53 as a reference surface. Show.

Note that the materials 301, 302, and 303 are not particularly limited as long as they are different from each other. The combination of the materials 301, 302, and 303 is not particularly limited, and examples thereof include a combination in which the materials 301, 302, and 303 are different hole transport materials, or a combination in which the materials are different electron transport materials. It is done. In this case, for example, vapor deposition consisting of any combination of a hole injection layer and a hole transport layer, a hole transport layer and an electron blocking layer, an electron transport layer and an electron injection layer, a hole blocking layer and an electron transport layer, It can form as the vapor deposition layer 311 * 314. In the case where the materials 301 and 303 are different types of light emitting dopant materials and the material 302 is a host material, a light emitting layer that emits light of different colors can be formed as the vapor deposition layers 311 and 314. Of course, one of the materials 301 and 303 is a light emitting dopant material, the other is a hole transporting material or an electron transporting material, and the material 302 is a hole transporting or electron transporting host material. There may be. In this case, as the vapor deposition layers 311 and 314, a light emitting layer and a layer made of an electron transporting material such as an electron transporting layer adjacent to the light emitting layer, or a layer made of a hole transporting material such as a hole transporting layer. Can be stacked.

In the present embodiment, the case where three vapor deposition sources that release different materials are provided has been described as an example, but the number of the vapor deposition sources is not limited to three. Moreover, the overlap and ratio of each vapor deposition area are not limited to the example mentioned above. As described above, this embodiment can also be applied to vapor deposition of three or more different materials. By changing the arrangement and height of the limiting plates 60 and 60 '(in other words, the deposition range by each deposition source), the material released from each deposition source, etc., a laminate of a co-deposition layer and a single deposition layer, A plurality of layers including a co-deposited layer, which are stacked on each other, such as a stack of co-adhering layers, can be formed in a stack.

[Embodiment 5]
In the present embodiment, only the differences from the previous embodiment will be described and illustrated. In the present embodiment, not only the forward path but also the return path in the reciprocating movement of the vapor deposition source is used for the deposition layer deposition.

9A is a cross-sectional view schematically showing the vapor deposition in the forward path according to the present embodiment, and FIG. 9B is a cross-sectional view schematically showing the vapor deposition in the return path according to the present embodiment. FIG. 10A is a cross-sectional view showing an example of a vapor deposition layer formed on the deposition target substrate 200 after vapor deposition in the outward path shown in FIG. 9A. FIG. ) Is a cross-sectional view showing an example of a vapor deposition layer formed on the film formation substrate 200 after vapor deposition in the return path shown in FIG.

FIGS. 9A and 9B illustrate the case where vapor deposition is performed reciprocally using the vapor deposition apparatus 100 according to the first embodiment. Therefore, (a) in FIG. 9 is the same as (a) in FIG. 3, and (a) in FIG. 10 is the same as (b) in FIG. In this embodiment, as shown in FIG. 9B, the return path is also used for vapor deposition, so that the thickness of the vapor deposition layer 312 is doubled compared to the case where vapor deposition is performed only in the forward path. In addition, a vapor deposition layer made of the same material as the vapor deposition layer 311 can be formed as the vapor deposition layer 315 on the vapor deposition layer 312.

In FIG. 10B, the vapor deposition layer 312 formed in the forward path and the vapor deposition layer 312 formed in the backward path are distinguished from each other by dotted lines, but these are films made of the same material. There is no boundary and it is formed continuously. Moreover, the ratio of the vapor deposition area | region shown to (a) * (b) of FIG. 9 and the ratio of the film thickness of the vapor deposition layer 311 * 312 shown to (a) * (b) of FIG. 10 formed by this are an example. As described above, the arrangement and height (in other words, the deposition range of each deposition source) of the restriction plates 60 and 60 ′ can be arbitrarily changed by appropriately adjusting.

In this embodiment, the case where the co-deposition layers of the materials 301 and 302, the single vapor deposition layer of the material 302, and the co-deposition of the materials 301 and 302 are stacked in this order has been described as an example. However, the present embodiment is not limited to this. For example, by using the vapor deposition apparatus 100 according to the second embodiment, for example, a single vapor deposition layer of the material 301, a co-vapor deposition layer of the materials 301 and 302, and the material 301 These single vapor deposition layers can also be laminated in this order.

[Embodiment 6]
In the present embodiment, only the differences from the previous embodiment will be described and illustrated. 11A is a cross-sectional view schematically showing the vapor deposition in the forward path, and FIG. 11B is a cross-sectional view schematically showing the vapor deposition in the return path. 12A is a cross-sectional view showing an example of a vapor deposition layer formed on the deposition target substrate 200 after vapor deposition in the outward path shown in FIG. 11A. FIG. ) Is a cross-sectional view showing an example of a vapor deposition layer formed on the film formation substrate 200 after vapor deposition in the return path shown in FIG.

Hereinafter, a case where the deposition apparatus 100 according to the fifth embodiment is provided with the shutter 111 that selectively shields the deposition path of the material 301 will be described as an example. In Embodiment 5, when the co-deposition layer which is the deposition layer 315 is not formed on the deposition layer 312, the material 302 is simply deposited on the end surface 202 of the deposition target substrate 200 facing the deposition sources 51 and 52 in the return path. The vapor deposition path of the material 301 is selectively shielded by the shutter 111 before reaching the boundary A between the single vapor deposition area and the co-deposition area where the material 301 and the material 302 are co-deposited. By doing so, as shown in FIG. 12B, after the vapor deposition in the return path, the vapor deposition layer 312 having a larger film thickness was laminated on the vapor deposition layer 311 than when the vapor deposition was performed only in the forward path. A stacked body of vapor deposition layers 311 and 312 can be formed.

In this embodiment, as shown in FIG. 11A and FIG. 12A, the vapor deposition layer 311 and the vapor deposition layer 312 are laminated in the forward path, so that only the vapor deposition layer 311 is formed in the forward path. Compared with the case where the vapor deposition layer 312 having the thickness shown in FIG. 12B is formed on the return path, the time for depositing only the vapor deposition layer 312 (that is, the vapor deposition time on the return path) can be shortened. For this reason, even if the shutter 111 is used, the material loss can be suppressed as compared with the conventional case, and the material peeling from the shutter 111 can be suppressed.

In the present embodiment, as described above, the case where the deposition apparatus 100 according to the fifth embodiment is provided with the shutter 111 that selectively shields the deposition path of the material 301 has been described as an example. This embodiment is not limited to this. In any of the above-described embodiments, a shutter that selectively shields the vapor deposition path of the vapor deposition material radiated from at least one vapor deposition source among the plurality of vapor deposition sources is provided, and vapor deposition is performed in each of the forward path and the return path. Only in one of the return paths, the above-described effects can be obtained by selectively shielding the vapor deposition paths of some of the plurality of vapor deposition materials by the shutter.

In the present embodiment, a single vapor deposition layer made of the first material or the second material is formed in the forward path and the return path, and the first material and the second material are either in the forward path or the return path. It is not limited to the case where the co-evaporation layer consisting of is formed. For example, when vapor deposition is performed using the vapor deposition apparatus 100 illustrated in FIG. 8A, when the vapor deposition path of the material 301 is blocked by the shutter 111, a single vapor deposition layer made of the material 302, respectively, in the forward path and the return path, A co-deposition layer made of the material 302 and the material 303 is formed. The above illustration is an example, and the present invention is not limited to the case where the vapor deposition path of the material 301 is blocked. As described above, according to the present embodiment, the single vapor deposition layer made of the first material or the second material is formed in the forward path and the return path, and the first material and the first path are formed in at least one of the forward path and the return path. It is possible to form a co-deposition layer made of two materials.

The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention. Furthermore, a new technical feature can be formed by combining the technical means disclosed in each embodiment.

The present invention can be used in a display device manufacturing method and a vapor deposition apparatus.

2 Display devices 24 EL layer (deposition layer)
51, 52, 52 ′, 53 Deposition source 60, 60 ′ Limit plate 65 Cooling mechanism (cooling section)
70 Deposition source moving mechanism (moving mechanism)
90 Substrate moving mechanism (moving mechanism)
DESCRIPTION OF SYMBOLS 100 Vapor deposition apparatus 111 Shutter 200 Film-forming substrate 301,302,303 Material 311,312,313,314,315 Deposition layer

Claims (15)

1. A first vapor-deposited layer that is a co-evaporated layer made of a material containing the first material and the second material; and a first vapor-deposited layer made of a material containing one of the first material and the second material. A manufacturing method of a display device having a laminate with two vapor deposition layers,
   A vapor deposition step of forming the first vapor deposition layer and the second vapor deposition layer on the film formation substrate by vapor-depositing the material on the film formation substrate;
   In the vapor deposition step, the first vapor deposition source that radiates the first material toward the deposition target substrate and the first vapor deposition source are arranged in parallel, and the second deposition source is directed toward the deposition target substrate. A plurality of vapor deposition sources including a second vapor deposition source that radiates a material, and a plurality of vapor deposition sources arranged in parallel so as to sandwich each vapor deposition source between the plurality of vapor deposition sources and the deposition target substrate The radiation angle of the first material radiated from the first vapor deposition source is smaller than the radiation angle of the second material radiated from the second vapor deposition source. A plurality of limiting plates for limiting the passage angle of the material radiated from each vapor deposition source so that the vapor deposition region by the first vapor deposition source overlaps a part of the vapor deposition region by the second vapor deposition source; and the plurality of vapor deposition sources And one of the plurality of limiting plates and the deposition target substrate is connected to the other of the plurality of vapor deposition sources. A plurality of vapor deposition sources, a plurality of limiting plates, and a substrate to be deposited with respect to the other using the vapor deposition apparatus including a moving mechanism that moves relatively along the installation direction. The display device is characterized in that the first vapor deposition layer and the second vapor deposition layer are stacked by performing vapor deposition while relatively moving along one direction of the vapor deposition sources in parallel. Production method.
2. The moving mechanism reciprocally moves one of the plurality of vapor deposition sources, the plurality of limiting plates, and the deposition target substrate along a parallel arrangement direction of the plurality of vapor deposition sources,
   2. The method of manufacturing a display device according to claim 1, wherein in the vapor deposition step, the first vapor deposition layer and the second vapor deposition layer are laminated on at least one of the reciprocating forward path and the return path. .
3. In the outward path in the vapor deposition step,
   Forming the first vapor deposition layer in a region where the vapor deposition region by the first vapor deposition source and the vapor deposition region by the second vapor deposition source overlap;
   Forming the second vapor deposition layer, which is a single vapor deposition layer made of the second material, in a region other than the overlapping region in the vapor deposition region by the second vapor deposition source;
   The method for manufacturing a display device according to claim 2, wherein the first vapor deposition layer and the second vapor deposition layer are laminated in this order on the deposition target substrate.
4. In the outward path in the vapor deposition step,
   Forming the first vapor deposition layer in a region where the vapor deposition region by the first vapor deposition source and the vapor deposition region by the second vapor deposition source overlap;
   Forming the second vapor deposition layer, which is a single vapor deposition layer made of the second material, in a region other than the overlapping region in the vapor deposition region by the second vapor deposition source;
   The method for manufacturing a display device according to claim 2, wherein the second vapor deposition layer and the first vapor deposition layer are laminated in this order on the deposition target substrate.
5. A third deposition source that radiates the second material toward the deposition substrate;
   The radiation angle of the second material emitted from the third vapor deposition source is smaller than the radiation angle of the second material emitted from the second vapor deposition source, and the vapor deposition region by the third vapor deposition source A plurality of limiting plates for limiting the passage angle of the material radiated from each vapor deposition source so as to overlap a region that does not overlap the vapor deposition region by the first vapor deposition source in the vapor deposition region by the second vapor deposition source ,
   In the outward path in the vapor deposition step,
   Forming the first vapor deposition layer in a region where the vapor deposition region by the first vapor deposition source and the vapor deposition region by the second vapor deposition source overlap;
   Forming the second vapor deposition layer, which is a single vapor deposition layer made of the second material, in a region where the vapor deposition region by the second vapor deposition source and the vapor deposition region by the third vapor deposition source overlap;
   The method for manufacturing a display device according to claim 2, wherein the first vapor deposition layer and the second vapor deposition layer are laminated in this order on the deposition target substrate.
6. A third deposition source that emits a third material toward the deposition substrate;
   In the vapor deposition step, the first vapor deposition layer which is a co-vapor deposition layer composed of the first material and the second material, and a co-vapor deposition layer composed of the second material and the third material. The method for manufacturing a display device according to claim 1, wherein the second vapor deposition layer is formed.
7. The radiation angle of the third material emitted from the third vapor deposition source is smaller than the radiation angle of the second material emitted from the second vapor deposition source, and the vapor deposition region by the third vapor deposition source A plurality of limiting plates that limit the passage angle of the material radiated from each vapor deposition source so as to overlap a region that does not overlap the vapor deposition region by the first vapor deposition source in the vapor deposition region by the second vapor deposition source Prepared,
   In the outward path in the vapor deposition step,
   Forming the first vapor deposition layer in a region where the vapor deposition region by the first vapor deposition source and the vapor deposition region by the second vapor deposition source overlap;
   Forming the second vapor deposition layer in a region where the vapor deposition region by the second vapor deposition source and the vapor deposition region by the third vapor deposition source overlap;
   The method for manufacturing a display device according to claim 6, wherein the first vapor deposition layer and the second vapor deposition layer are laminated in this order on the deposition target substrate.
8. In the return path in the vapor deposition step,
   Forming the first vapor deposition layer in a region where the vapor deposition region by the first vapor deposition source and the vapor deposition region by the second vapor deposition source overlap;
   Forming the second vapor deposition layer, which is a single vapor deposition layer made of the second material, in a region other than the overlapping region in the vapor deposition region by the second vapor deposition source;
   4. The method for manufacturing a display device according to claim 3, wherein the second vapor deposition layer and the first vapor deposition layer are laminated in this order on the deposition target substrate.
9. A shutter for shielding a vapor deposition path of the vapor deposition material radiated from the first vapor deposition source;
   In the return path in the vapor deposition step,
   The shutter shields the vapor deposition path of the vapor deposition material radiated from the first vapor deposition source,
   4. The method for manufacturing a display device according to claim 3, wherein the second vapor deposition layer, which is a single vapor deposition layer made of the second material, is formed on the deposition target substrate.
10. A shutter that selectively shields a vapor deposition path of vapor deposition material emitted from at least one vapor deposition source of the plurality of vapor deposition sources;
    In the vapor deposition step, vapor deposition is performed in each of the forward path and the return path, and one of the first material and the second material is formed by the shutter on the forward path and the return path. By selectively shielding the vapor deposition path, the second vapor deposition layer which is a single vapor deposition layer made of the first material or the second material is formed in the forward path and the return path, and the forward path and the above 3. The display device manufacturing method according to claim 2, wherein the first vapor deposition layer, which is a co-vapor deposition layer composed of the first material and the second material, is formed on at least one of the return paths. Method.
11. 11. The protruding height of a part of the plurality of limiting plates from the vapor deposition source is higher than the remaining limiting plate among the plurality of limiting plates. 2. A method for manufacturing a display device according to item 1.
12. 12. The method of manufacturing a display device according to claim 11, wherein some of the plurality of restriction plates are arranged between the remaining restriction plates of the plurality of restriction plates.
13. A first vapor deposition source that radiates a first material toward the film formation substrate and a second vapor deposition that is arranged in parallel with the first vapor deposition source and radiates the second material toward the film formation substrate. A plurality of deposition sources including a source;
    The plurality of vapor deposition sources and the deposition target substrate are provided apart from each other in the direction in which the plurality of vapor deposition sources are arranged so as to sandwich each vapor deposition source, and are emitted from the first vapor deposition source. The radiation angle of the first material is smaller than the radiation angle of the second material emitted from the second vapor deposition source, and the vapor deposition area by the first vapor deposition source is vapor deposition by the second vapor deposition source. A plurality of limiting plates that limit the passage angle of the material emitted from each vapor deposition source so as to overlap a part of the region;
    At the time of vapor deposition of the first material and the second material, one of the plurality of vapor deposition sources, the plurality of limiting plates, and the deposition target substrate is arranged in parallel with the other of the plurality of vapor deposition sources. And a moving mechanism for relatively moving along the
    Vapor deposition is performed while moving one of the plurality of vapor deposition sources, the plurality of limiting plates, and the deposition target substrate relative to the other along one direction of the plurality of vapor deposition sources. Thus, the first vapor deposition layer, which is a co-deposition layer made of a material containing the first material and the second material, and one of the first material and the second material are used. The vapor deposition apparatus characterized by laminating | stacking the 2nd vapor deposition layer which consists of a material containing.
14. The vapor deposition apparatus according to claim 13, further comprising a cooling unit that cools the restriction plate.
15. The vapor deposition apparatus according to claim 13 or 14, wherein the material of the limiting plate is stainless steel.

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