KR102169862B1 - Organic light emitting diode display device and fabricating method thereof - Google Patents

Abstract

The present invention relates to an organic light emitting diode display and a method of manufacturing the same.
An organic light emitting diode display device according to the present invention includes: an organic light emitting diode formed in a display area, an insulating layer formed in a non-display area, and a pad formed on the insulating layer; And a first laser absorbing layer formed to cover the insulating layer.
Through this, the process can be simplified by effectively removing the encapsulation layer formed in the non-display area using a laser.

Description

Organic light emitting diode display device and its manufacturing method {ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND FABRICATING METHOD THEREOF}

The present invention relates to an organic light emitting diode display device capable of simplifying a process and a method of manufacturing the same.

In line with the recent information age, the display field has also developed rapidly, and in response to this, it is a liquid crystal display device (FPD) as a flat panel display device (FPD) with advantages of thinner, lighter, and low power consumption. LCD), plasma display panel device (PDP), electroluminescence display device (ELD), field emission display device (FED), and organic light emitting diode (OLED) ) Display devices have been developed and used.

Among them, organic light-emitting diode display devices have the advantage of being able to implement a light-weight and thin-walled display device that is simpler than a liquid crystal display device that requires a separate light source, a backlight unit, by using a self-luminous device. have.

In addition, the organic light-emitting diode display device has the advantage of being easy to manufacture and design a driving circuit because it has a comparatively superior viewing angle and contrast ratio compared to a liquid crystal display device, has a fast response speed, consumes low power consumption, and can drive a low DC voltage. . In addition, since the internal components are solid, they are resistant to external shocks, and have a wide range of operating temperatures, and more active research is being conducted.

In such an organic light emitting diode display, a first substrate on which a thin film transistor and an organic light emitting diode are formed, and a second substrate for encapsulation are bonded to each other, and substantially drive the organic light emitting diode with a display area that displays an image. And a non-display area to which the driving IC and the driving printed circuit board are connected.

At this time, as the first and second substrates, glass substrates have been commonly applied to withstand high heat generated during the manufacturing process.However, since glass substrates have limitations in providing light weight, thinness, and flexibility, recently Instead of a non-flexible glass substrate, a flexible substrate such as polyimide, which has flexibility, is applied.

On the other hand, after the thin film transistor and the organic light emitting diode are formed on the first substrate, an encapsulation layer is finally formed through the CVD method to protect the organic light emitting diode. In the non-display area, an encapsulation layer is applied by applying a mask to connect the driving IC. Should not be formed.

As the mask is applied in this way, the size of the chamber increases, the cost increases, and the process for aligning the mask in the chamber becomes complicated. After forming the encapsulation layer on the entire surface including the display area and the non-display area, the laser is applied. A technique for removing the encapsulation layer formed in the non-display area by using has been proposed.

However, in the process of irradiating a laser to remove the encapsulation layer, there is a problem that the constituent parts of the pad portion formed in the non-display area from the substrate are lifted from the substrate before the encapsulation layer is completely removed.

This is because the laser passes through the insulating materials and reaches the substrate. Since the polyimide applied as the substrate has a high absorption rate and absorbs the laser, an excitation phenomenon occurs in which a component part of the pad formed in the non-display area is lifted from the substrate.

An object of the present invention for solving the above problems is to form a laser absorbing layer capable of absorbing a laser prior to forming the encapsulation layer in a non-display area, so that the encapsulation layer can be effectively removed without excitation when applying a laser. It is to provide an organic light emitting diode display device and a method of manufacturing the same.

According to an exemplary embodiment of the present invention for achieving the above object, an organic light emitting diode display device including a display area and a non-display area includes: an organic light emitting diode formed in the display area; An insulating film formed in the non-display area; A pad formed on the insulating layer; And a first laser absorbing layer formed to cover the insulating layer.

The insulating layer is a gate insulating layer, the pad is a gate pad, an interlayer insulating layer having a pad contact hole exposing the gate pad above the gate pad, and an auxiliary formed by contacting the gate pad through the pad contact hole An electrode is further included, and the first laser absorbing layer is formed to cover the interlayer insulating layer.

It further comprises a second laser absorbing layer formed to overlap with the auxiliary electrode, wherein the first laser absorbing layer and the second laser absorbing layer are spaced apart from each other.

The first laser absorbing layer and the auxiliary electrode are spaced apart from each other.

It further comprises a second laser absorbing layer formed to overlap with the pad, wherein the first laser absorbing layer and the second laser absorbing layer are spaced apart from each other.

The first laser absorbing layer and the pad are spaced apart from each other.

The laser absorption layer is characterized in that it absorbs 90% or more of a laser having a wavelength band of 300 nm or less.

The laser absorbing layer is characterized in that it is made of at least one of indium-tin-oxide (ITO) and molitanium (MoTi).

A semiconductor layer formed on a substrate, including a first central region and a second region positioned on both sides of the first region, a gate insulating film formed above the semiconductor layer, and a gate formed above the gate insulating film An interlayer insulating layer including an electrode, first and second semiconductor contact holes formed above the gate electrode and respectively exposing the second region, and the second layer exposed through the first and second semiconductor contact holes And source and drain electrodes in contact with a region, wherein the substrate is a flexible substrate, and the insulating layer is the interlayer insulating layer.

It characterized in that it further comprises a driving IC electrically connected to the auxiliary electrode through the first laser absorption layer.

The organic light-emitting diode includes a first electrode, an organic light-emitting layer, and a second electrode, and the first laser absorption layer is formed of the same material on the same layer as the first electrode.

Meanwhile, a method of manufacturing an organic light emitting diode display device according to an exemplary embodiment of the present invention includes forming an insulating film of an insulating material on the non-display area on a substrate in which a display area in which an organic light emitting diode is formed and a non-display area are separated. Wow; Forming a pad on the insulating layer; And forming a first laser absorbing layer to cover the insulating layer.

Forming an interlayer insulating layer having a pad contact hole exposing the pad above the pad, and forming an auxiliary electrode contacting the pad through the pad contact hole, the first laser The absorption layer is characterized in that it is formed to cover the interlayer insulating film.

Forming a second laser absorbing layer overlapping with the auxiliary electrode when forming the first laser absorbing layer, the first laser absorbing layer and the second laser absorbing layer, and the first laser absorbing layer and the auxiliary The electrodes are characterized in that they are spaced apart from each other.

Forming a second laser absorbing layer overlapping with the pad at the same time when forming the first laser absorbing layer, wherein the first laser absorbing layer and the second laser absorbing layer, and the first laser absorbing layer and the pad Is characterized by being spaced apart from each other.

The laser absorption layer is characterized in that it is made of at least one of indium-tin-oxide (ITO) and molitanium (MoTi) capable of absorbing 90% or more of a laser having a wavelength of 300 nm or less.

Forming a semiconductor layer on the display area, forming a gate insulating layer over the semiconductor layer, forming a gate electrode over the gate insulating layer, and forming the semiconductor layer over the gate electrode Forming an interlayer insulating film including first and second semiconductor contact holes each exposing the second regions of, and source and drain electrodes respectively contacting the second regions through the first and second semiconductor contact holes It characterized in that it further comprises the step of forming.

Forming a sacrificial layer on a base substrate, forming a flexible layer by applying a polymer material to the top of the sacrificial layer, and peeling off the flexible layer by using the sacrificial layer. do.

And bonding a driving IC to an upper portion of the second laser absorbing layer.

Forming an encapsulation layer for protecting the organic light-emitting diode on the entire surface of the substrate on which the organic light-emitting diode is formed, and removing the encapsulation layer formed in the non-display area by irradiating a laser to the non-display area. It features.

The forming of the organic light-emitting diode includes forming a first electrode for each pixel area, forming the organic light-emitting layer over the first electrode, and forming a second electrode on the entire surface of the substrate on which the organic light-emitting layer is formed. And forming, wherein the first laser absorbing layer is formed in the step of forming the first electrode.

According to the organic light emitting diode display device and its manufacturing method according to the present invention, the encapsulation layer in the non-display area can be effectively removed through the laser by forming a laser absorbing layer capable of absorbing the laser in the non-display area before forming the encapsulation layer. You will be able to.

Through this, there is an advantage in that the excitation phenomenon that may occur by irradiating the laser is prevented, the process is simplified, and the cost can be reduced.

1 is a schematic cross-sectional view of an organic light emitting diode display device according to an embodiment of the present invention.
2 is a diagram schematically illustrating a display area and a non-display area in an organic light emitting diode display according to an exemplary embodiment of the present invention.
3A to 3H are cross-sectional views illustrating a manufacturing process of an organic light emitting diode display device according to an exemplary embodiment of the present invention.
4 is a view showing another example of a non-display area in an organic light emitting diode display device according to an embodiment of the present invention.
5 is a graph showing the laser absorption rate for each material.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

1 is a cross-sectional view schematically illustrating an organic light emitting diode display device according to an embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view illustrating a display area and a non-display area in an organic light emitting diode display device according to an embodiment of the present invention. It is a drawing.

As shown, the organic light emitting diode display device 100 includes a plurality of pixel areas (not shown) and borders the display area AA and the display area AA for implementing an image, and an IC (not shown) for driving. ) And a driving printed circuit board (not shown) are divided into a non-display area NAA including a pad part PA for connection.

The organic light emitting diode display device 100 includes a driving thin film transistor DTr, a switching thin film transistor (not shown), and a first substrate 110 on which an organic light emitting diode E is formed corresponding to each of a plurality of pixel regions. do. In this case, although not shown in the drawings, a second substrate for encapsulation and a protective film provided on the front surface of the second substrate may be further included.

Here, although not shown, each of the plurality of pixel regions is defined by a gate line formed along a first direction and a data line formed along a second direction crossing the gate line. In addition, a switching thin film transistor and a driving thin film transistor DTr electrically connected to the switching thin film transistor are formed at the intersection of the gate wiring and the data wiring. This will be described in more detail below.

The first substrate 110 and the second substrate (not shown) are sealed and bonded through a seal pattern (not shown) formed at the edge thereof while being spaced apart from each other, or a method such as front bonding such as a face seal. The display panel is formed by being bonded together.

Here, the first substrate 110 referred to as the lower substrate and the second substrate (not shown) referred to as the upper substrate or the encapsulation substrate may be thin flexible substrates.

At this time, the flexible substrate is polyethersulfone (PES), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polycarbonate (PC), and polyimide ( polyimide: PI) can be made of any one.

A buffer layer 111 made of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is formed on the first substrate 110.

Here, the buffer layer 111 serves to improve the deposition rate of the thin film by improving the surface characteristics of the substrate 110 and may be omitted.

In addition, a semiconductor layer 113 is formed in the display area AA on the first substrate 110 on which the buffer layer 111 is formed, and the semiconductor layer 113 is made of silicon corresponding to the driving area.

The semiconductor layer 113 includes a first region 113a located at the center thereof and forming a channel, and a second region 113b doped with a high concentration of impurities on both sides of the first region 113a.

A gate insulating layer 116 is formed on the semiconductor layer 113.

Further, a gate electrode 120 is formed on the first substrate 110 on which the gate insulating layer 116 is formed, corresponding to the first region 113a of the semiconductor layer 113, and a gate wiring is formed in the non-display region NAA. A gate pad 122 connected to one end of (not shown) is formed.

An interlayer insulating layer 123 is formed over the gate electrode 120, the gate wiring (not shown), and the gate pad 122.

Here, the interlayer insulating layer 123 and the lower gate insulating layer 116 have first and second semiconductor layer contact holes 124 and 125 exposing the second regions 113b located on both sides of the first region 113a. It is equipped. In this case, a pad contact hole 126 partially exposing the gate pad 122 is provided in the interlayer insulating layer 123 in the non-display area NAA.

Source and drain electrodes 133 and 136 and pad contacts respectively contacting the second region 113b exposed through the first and second semiconductor layer contact holes 124 and 125 on the upper portion of the interlayer insulating layer 123 The auxiliary electrode 138 is formed in contact with the gate pad 122 exposed through the hole 126.

Further, although not shown, a data line (not shown) defining a pixel region crossing the gate line (not shown) and a power line (not shown) spaced apart from the gate line (not shown) are formed on the interlayer insulating layer 123. In addition, a data pad (not shown) connected to one end of the data line (not shown) together with these lines may be formed in the non-display area NAA.

Here, the semiconductor layer 113 formed on the first substrate 110, the gate insulating layer 116, the gate electrode 120, the interlayer insulating layer 123, and the source and drain electrodes 133 and 136 are driving thin films. It forms a transistor DTr. At this time, although not shown in the drawing, the switching thin film transistor (not shown) also has the same configuration as that of the driving thin film transistor DTr. On the other hand, the gate electrode (not shown) of the switching thin film transistor (not shown) is connected to a gate line (not shown) extending in one direction, and the source electrode (not shown) is data formed by crossing the gate line (not shown). It is connected to the wiring (not shown).

The data line (not shown), the source and drain electrodes 133 and 136, and the upper portion of the interlayer insulating layer 123 exposed therebetween are formed of a first protective layer 140 made of an inorganic insulating material and an organic insulating material, and have a flat surface. A second protective layer 142 having a is formed. In this case, one of the first protective layer 140 and the second protective layer 142 may be omitted.

The first and second protective layers 140 and 142 have a drain contact hole 143 exposing the drain electrode 136 of the driving thin film transistor DTr and the auxiliary electrodes 138a and 138b in the non-display area NAA. ) And an opening hole 144 exposing the interlayer insulating layer 123 is provided.

A first electrode 147 in contact with the drain electrode 136 of the driving thin film transistor DTr and the drain contact hole 143 is formed on the second protective layer 142 for each pixel region. At this time, the first electrode 147 may be made of indium-tin-oxide (ITO) or indium-zinc-oxide (IZO).

At the same time, in the non-display area NAA, a laser absorbing layer 149 is formed in contact with the auxiliary electrode 138 and the interlayer insulating layer 123 through the opening hole.

Here, the laser absorbing layer 149 includes a first laser absorbing layer 149a overlapping the auxiliary electrode 138 and a second laser absorbing layer 149b overlapping the interlayer insulating layer 123. The first laser absorbing layer 149a and The second laser absorbing layer 149b is formed to be spaced apart from each other, and the second laser absorbing layer 149b is formed to be spaced apart from the auxiliary electrode 138. This is to prevent electrical connection between the second laser absorbing layer 149b and the auxiliary electrode 138 because the driving IC (not shown) is bonded to the upper portion of the first laser absorbing layer 149a.

In addition, it is preferable that the second laser absorbing layer 149b is formed to almost cover the interlayer insulating layer 123 by minimizing the separation distance between the auxiliary electrode 138 spaced therefrom.

To further explain this, the second laser absorbing layer 149b is a component for absorbing a laser, and if the lower interlayer insulating film is exposed through the second laser absorbing layer 149b, the laser will pass through the exposed interlayer insulating film. Therefore, it is preferable that the interlayer insulating film exposed in the non-display area is formed to be covered.

Here, the laser used in the present invention has a deep UV wavelength band of 300 nm or less, and is most preferably a laser emitted through an excimer laser device having 248 nm. This is because indium-tin-oxide (ITO) or molitanium (MoTi) applied as the laser absorbing layer 149 absorbs 90% or more of a laser wavelength of 248 nm.

On the other hand, when a laser having a wavelength band of 300 nm or more is irradiated, a film loss of the laser absorbing layer 149 formed of indium-tin-oxide (ITO) or molitanium (MoTi) occurs, and the laser absorbing layer 149 is There is a problem that the function (laser absorption) cannot be performed.

Meanwhile, the first electrode 147 may be formed in a double-layer structure of a first layer and a second layer, and the first layer may serve as a reflector, and the second layer may serve as an anode electrode.

At this time, the first layer is made of a metal material having excellent reflection efficiency, for example, aluminum (Al) or silver (Ag), and reflects light emitted from the organic light emitting layer 155 formed on the first electrode 147 upward. By doing this, it serves to improve the luminous efficiency.

In addition, the second layer may be made of a transparent conductive material having a relatively large work function value, for example, indium-tin-oxide (ITO) or indium-zinc-oxide (IZO).

As described above, when the first electrode 147 has a double-layer structure, the laser absorption layer 149 may also have a double-layer structure like the first electrode 147.

Meanwhile, the laser absorbing layer 149 may be formed of, for example, molitanium (MoTi). To this end, the first electrode 147 may be formed by applying molitanium (MoTi) instead of the indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) described above. In this case, it is preferable to deposit molitanium with a thin thickness. Alternatively, the first electrode 147 may not be formed together when forming, but may be formed after the first electrode 147 is formed.

Further, although not shown in the drawing, the driving IC is bonded to the upper portion of the first laser absorbing layer 149a. Accordingly, the driving IC is electrically connected to the auxiliary electrode 138 through the first laser absorbing layer 149a.

A buffer pattern 150 is formed on the boundary of each pixel region above the first electrode 147 and surrounds each pixel region and overlaps the rim of the first electrode 147.

Here, the buffer pattern 150 may be made of any one of a general transparent organic insulating material such as polyimide, photo acryl, benzocyclobutene (BCB), or a material representing black, for example It can also be made of black resin.

An organic emission layer 155 is formed on the first electrode 147, and the organic emission layer 155 can be distinguished through a buffer pattern 150 bordering each pixel area.

The organic light-emitting layer 155 may be configured by forming light-emitting patterns that emit red, green, and blue light for each pixel area, and a light-emitting pattern for emitting white light may be added.

In this case, the organic emission layer 155 may be formed by varying the thickness of each of the red, green, and blue emission patterns formed for each pixel area. For example, in the case of a red emission pattern emitting red, the thickness of about 55 nm to 65 nm And, the green light emitting pattern may have a thickness of about 40nm to 50nm, and the blue light emitting pattern may be formed to have a thickness of about 35nm to 45nm.

In addition, the organic light emitting layer 155 may be composed of a single layer, but in order to increase luminous efficiency, a hole injection layer, a hole transporting layer, a light emitting material layer, and electronic It may be composed of multiple layers of an electron transporting layer and an electron injection layer.

A second electrode 158 is formed on the entire surface of the organic emission layer 155.

The second electrode 158 may be made of one of a metal material having a relatively low work function value, for example, aluminum, copper, tungsten, and molybdenum to serve as a cathode electrode.

The above-described first and second electrodes 147 and 158 and the organic emission layer 155 formed therebetween form an organic light emitting diode E.

In this case, the organic light emitting diode E may be driven in a top emission type in which light emitted from the organic light emitting layer 155 is emitted through the second electrode 158, but is not limited thereto. The light emitted at 155 may be configured to be driven in a bottom emission type in which light is emitted through the first electrode 147. In this case, the first layer acting as a reflector in the first electrode of the double-layer structure described above is not included.

Next, first to third encapsulation layers 161, 162, and 163 for sealing the organic light emitting diode E may be formed on the entire surface of the first substrate 110 on which the second electrode 158 is formed.

Here, the first to third encapsulation layers 161, 162, and 163 protect the organic light-emitting diode E so that foreign substances such as moisture, oxygen, and dust in the atmosphere do not penetrate into the organic light-emitting diode E. At the same time, it plays a role in flattening the surface.

The first to third encapsulation layers 161, 162, and 163 may be made of an inorganic insulating material, for example, silicon oxide (SiO ₂ ), silicon nitride (SiNx), or aluminum oxide (Al2O3).

Meanwhile, although the first to third encapsulation layers 161, 162, and 163 having a multilayer structure are illustrated in the drawings, the present invention is not limited thereto and may be configured as a single layer.

3A to 3H are cross-sectional views illustrating a manufacturing process of an organic light emitting diode display device according to an exemplary embodiment of the present invention, and refer to FIG. 1.

First, as shown in FIG. 3A, a base substrate 101 is prepared, a sacrificial layer 103 is deposited on the base substrate 101, and then a polymer material, for example, polyimide (PI) is applied. Thus, the flexible layer 110 is formed.

Here, the base substrate 101 serves as a support substrate, and the flexible layer 110 is stabilized so that the thin flexible layer is not easily bent or twisted and its shape is fixed for a subsequent process for finally manufacturing the flexible substrate. It plays a role of support. Handling of the flexible layer 110 is facilitated through the base substrate 101, and subsequent processes can be carried out more precisely and stably.

For this, the base substrate 101 may be made of a transparent inorganic molding such as plate-shaped glass or quartz that is transparent and has excellent heat resistance.

The sacrificial layer 103 may be formed of amorphous silicon or polysilicon.

The polymeric material is not limited to polyimide, but polyethersulfone (PES), polycarbonate (PC) polyethylene naphthalate (PEN), polyimide polyethylene terephthalate (PET), and polyvinyl chloride It may be made of at least one material selected from (polyvinyl chloride:PVC).

Then, an inorganic insulating material, for example, silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is deposited on the flexible layer 110 to form the buffer layer 111.

Then, amorphous silicon is deposited on the flexible layer 110 on which the buffer layer 111 is formed, a photoresist is applied, and then exposure through a mask is performed. The semiconductor layer 113 is formed by developing the exposed photoresist and performing patterning through a mask process in which the amorphous silicon layer exposed to the outside of the photoresist remaining after development is etched.

In this case, a process of determining polysilicon through heat treatment through a dehydrogenation process of the semiconductor layer 113 is further included.

Next, as shown in FIG. 3B, an insulating material such as silicon nitride (SiNx) or silicon oxide (SiO₂) is deposited on the flexible layer 110 on which the semiconductor layer 113 is formed to form the gate insulating layer 116. .

Then, a first metal layer (not shown) is deposited on the gate insulating layer 116, and a mask process is performed to form the gate electrode 120 over the first region (113a in FIG. 1) of the semiconductor layer 113, A gate pad 122 connected to one end of the gate wiring (not shown) is formed.

Here, the first metal layer is aluminum (Al), copper (Cu), gold (Au), silver (Ag), titanium (Ti), chromium (Cr), tungsten (W), tantalum (Ta), and molybdenum (Mo). One or two or more materials selected from may be deposited to form a single layer or a multilayer structure of a double layer or more. Or aluminum (Al), copper (Cu), gold (Au), silver (Ag), titanium (Ti), chromium (Cr), tungsten (W), tantalum (Ta) and molybdenum (Mo) in one of calcium ( Ca), Mg (magnesium), zinc (Zn), titanium (Ti), molybdenum (Mo), nickel (Ni), manganese (Mn), zirconium (Zr), cadmium (Cd), gold (Au), silver ( Ag), cobalt (Co), phosphorus (In), tantalum (Ta), hafnium (Hf), tungsten (W), and may be made of an alloy containing at least one of chromium (Cr).

Next, referring to FIG. 3C, the gate electrode 120 and the gate insulating layer 116 exposed to the outside of the gate wiring (not shown) are etched to form n+ or p+ by ion implantation having an appropriate dose on the substrate 110. Doping is carried out.

In this case, a first region 113a is formed in a region in which ion implantation is blocked by the gate electrode 120 of the semiconductor layer 113, and a second region 113b is formed in the other regions. The semiconductor layer 113 including the first region 113a and the second region 113b is completed.

Next, an inorganic insulating material, for example, silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is deposited on the entire surface of the flexible layer 110 on which the gate electrode 120 is formed, and patterning is performed by performing a mask process. ) An interlayer insulating layer 123 having first and second semiconductor layer contact holes 124 and 125 exposing the second regions 113b on both sides, respectively, and pad contact holes 126 exposing the gate pad 122 To form.

In addition, a second metal layer is deposited on the entire surface of the flexible layer 110 on which the interlayer insulating layer 123 is formed, and patterned by performing a mask process to form the second region 113b through the first and second semiconductor layer contact holes 124 and 125. The auxiliary electrodes 138 in contact with the gate pad 122 are formed through the source and drain electrodes 133 and 136 and the pad contact holes 126 in contact with each other.

In this case, the source and drain electrodes 133 and 136 are positioned to be spaced apart from each other with the gate electrode 120 interposed therebetween.

In addition, a data line (not shown) that crosses the gate line (not shown) to define a pixel region, and a power line (not shown) spaced apart from the gate line (not shown) is formed, and is connected to one end of the data line (not shown). A data pad (not shown) may be formed in the non-display area NAA.

The second metal layer is aluminum (Al), copper (Cu), gold (Au), silver (Ag), titanium (Ti), chromium (Cr), tungsten (W), tantalum (Ta), and molybdenum (Mo). One or two or more materials selected from may be deposited to form a single layer or a multilayer structure of a double layer or more. Or aluminum (Al), copper (Cu), gold (Au), silver (Ag), titanium (Ti), chromium (Cr), tungsten (W), tantalum (Ta) and molybdenum (Mo) in one of calcium ( Ca), Mg (magnesium), zinc (Zn), titanium (Ti), molybdenum (Mo), nickel (Ni), manganese (Mn), zirconium (Zr), cadmium (Cd), gold (Au), silver ( Ag), cobalt (Co), phosphorus (In), tantalum (Ta), hafnium (Hf), tungsten (W), and may be made of an alloy containing at least one of chromium (Cr).

Next, as shown in FIG. 3D, an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiO₂) is deposited on the entire surface of the flexible layer 110 on which the source and drain electrodes 133 and 136 are formed, and photoacrylic or The first protective layer 140 and the second protective layer 142 are formed by applying an organic insulating material such as benzocyclobutene (BCB).

Thereafter, by performing a mask process, the drain contact hole 143 exposing the drain electrode 136 is exposed to the first and second protective layers 140 and 142, and the auxiliary electrode 138 and the interlayer insulating layer in the non-display area NAA. An opening hole 144 exposing 123 is formed.

Next, by depositing and patterning indium-tin-oxide (ITO) or indium-zinc-oxide (IZO), a transparent conductive material having a relatively high work function, to have a thickness of several thousand Å over the second protective layer 142 A first electrode 147 in contact with the drain electrode 136 of the driving thin film transistor DTr is formed through the drain contact hole 143 for each pixel area.

Also, at the same time as the first electrode 147, a laser absorbing layer 149 is formed in contact with the auxiliary electrode 138 of the non-display area NAA and the interlayer insulating layer 123 exposed to both sides thereof and spaced apart from each other.

Here, the laser absorbing layer 149 includes a first laser absorbing layer 149a overlapping the auxiliary electrode 138 and a second laser absorbing layer 149b overlapping the interlayer insulating film 123.

Meanwhile, the laser absorbing layer 149 may be formed of a material other than the same material as the first electrode 147. In more detail, after forming the first electrode 147 for each pixel area of the display area AA through the mask process in step 3d, the first electrode 147 is formed on the flexible layer 110. By applying titanium (MoTi) and performing a masking process, the auxiliary electrode 138 of the non-display area (NAA) and the interlayer insulating layer 123 exposed to both sides thereof contact each and each of the laser absorbing layers 149 spaced apart from each other can be formed. May be.

That is, when the laser absorbing layer 149 is formed of the same material as the first electrode 147, it can be formed at the same time in the process of forming the first electrode 147, so a separate mask process for the laser absorbing layer 149 is performed. It has the advantage of not having to add it.

Next, as shown in FIG. 3E, a photosensitive organic insulating material is applied on the top of the first electrode 147 and patterned to form a buffer pattern 150 partially overlapping with the first electrode 147.

Here, the photosensitive organic insulating material may be, for example, any one of polyimide, photo acryl, and benzocyclobutene (BCB). In addition, the present invention is not limited thereto, and one of black resin, graphite powder, gravure ink, black spray, and black enamel may be applied.

The buffer pattern 150 is formed in a matrix type having a lattice structure on the flexible layer 110 so that each pixel area is divided.

Next, the organic light-emitting layer 155 is formed by applying or depositing an organic light-emitting material on the entire surface of the flexible layer 110 on which the burpo pattern 150 is formed.

The organic light emitting layer 155 may be formed on the entire surface of the flexible layer 110 by coating and spraying using a nozzle coating device, a dispensing device, or an ink jet device, or may be formed through a vacuum thermal evaporation method. .

In this case, in the vacuum thermal evaporation method, heat is applied to a crucible (not shown) in which the organic light emitting material for forming the organic light emitting layer 155 is contained in a powder state inside the vacuum chamber, and the organic light emitting material is heated and sublimated to be deposited.

The organic light emitting layer 155 may be composed of a single layer, and to increase luminous efficiency, a hole injection layer, a hole transporting layer, an emitting material layer, and an electron transporting layer It may be composed of multiple layers of a transporting layer) and an electron injection layer.

In addition, the organic emission layer 155 may have a different thickness for each of the red, green, and blue pixel regions P1, P2, and P3. For example, in the case of the red organic emission layer 155 that emits red, about 55 nm to 65 nm The green organic emission layer 155 may have a thickness of about 40 nm to 50 nm, and the blue organic emission layer 155 may be formed to have a thickness of about 35 nm to 45 nm.

Next, on the entire surface of the flexible layer 110 on which the organic light emitting layer 155 is formed, a metal material having a relatively small work function value, such as aluminum (Al), aluminum alloy, silver (Ag), magnesium (Mg), gold (Au) One of them is thermally evaporated or ion beam evaporated to form the second electrode 158.

In this case, the second electrode 158 is preferably formed at a low temperature to minimize damage to the organic light emitting layer 155.

The above-described first and second electrodes 147 and 158 and the organic emission layer 155 formed therebetween form an organic light emitting diode E.

And, as shown in FIG. 3F, an insulating material is deposited or coated on the entire surface of the flexible layer 110 on which the second electrode 158 of the organic light emitting diode E is formed to form the encapsulation layers 161, 162, and 163. do.

The encapsulation layers 161, 162 and 163 are for preventing and protecting moisture from penetrating into the organic light-emitting diode E, and forming a flat surface, a single layer or a first encapsulation layer to a third encapsulation layer 161, 162, 163) may be formed in a multi-layered structure.

Next, as shown in FIG. 3G, the encapsulation layers 161, 162, and 163 are removed by irradiating a laser onto the non-display area NAA on the flexible substrate 110.

In this case, in the present invention, the laser absorbing layer 149 is provided under the encapsulation layers 161, 162, and 163 of the non-display area NAA, so that most of the laser is absorbed by the laser absorbing layer 149. Accordingly, in the conventional irradiation process of irradiating a laser to remove the encapsulation layer formed in the non-display area (NAA), it is possible to prevent an excitation phenomenon in which the components of the pad part are separated from the substrate (flexible layer).

In more detail, in the non-display area (NAA) where the auxiliary electrode is not formed, the interlayer insulating film, the gate insulating film, the buffer layer and the flexible layer are sequentially positioned. In the absence of the laser absorption layer according to the present invention, the laser is an interlayer insulating film. It penetrates into the flexible layer through the gate insulating layer and the buffer layer. At this time, since the laser absorption rate of the flexible layer is as high as 90% or more, an excitation phenomenon in which the components of the pad portion are separated from the flexible layer may occur before the encapsulation layer is completely removed. However, in the present invention, by forming a laser absorbing layer having a high laser absorption rate of 90% or more under the encapsulation layer, most of the laser is absorbed by the laser absorbing layer, and the lifting phenomenon can be prevented by not passing through the lower interlayer insulating layer.

Thereafter, a driving IC (not shown) is bonded to an upper portion of the first laser absorbing layer 149a in the non-display area NAA. In this way, the driving IC (not shown) and the auxiliary electrode 138 are electrically connected to each other through the first laser absorbing layer 149a.

In addition, a release process of separating the flexible layer 110 from the base substrate 101 by performing a dehydrogenation treatment on the silicon film, which is the sacrificial layer 103 by irradiating a laser beam on the back surface of the base substrate 101 can be performed. I can.

Accordingly, the flexible layer 110 acts as the flexible substrate 110, so that the organic light emitting diode display device according to the present invention can be manufactured as shown in FIG. 3H.

Meanwhile, in the present invention, a laser absorbing layer is applied to a gate pad and described, but the laser absorbing layer according to the present invention may be applied to a data pad.

This will be described with reference to FIG. 4.

4 is a diagram illustrating another example of a non-display area in an organic light emitting diode display device according to an embodiment of the present invention. At this time, since it has already been described while describing FIG. 1, detailed descriptions are omitted.

As shown in FIG. 4, a data pad 237 connected to one end of a data line (not shown) is formed on the interlayer insulating layer 223 in the non-display area NAA.

A laser absorbing layer 249 is formed on the data pad 237.

In more detail, in the non-display area (NAA), the upper portion of the gate pad (122 in FIG. 1) becomes an auxiliary electrode (138 in FIG. 1), and a laser absorbing layer (149 in FIG. 1) is formed above the gate pad (122 in FIG. 1). However, since the data pad 237 is formed on the same layer with the same material in the same process as the auxiliary electrode (138 in FIG. 1 ), the laser absorbing layer 249 is formed by directly overlapping the data pad 237.

Meanwhile, the laser absorbing layers 149 and 249 according to the present invention described above include first absorbing layers 149a and 249a formed by overlapping with the auxiliary electrode (138 in FIG. 1) or the data pad 237, and the insulating film 123, Although it has been described that the second absorption layers 9149b and 249b formed on the upper portion of the 223 are all formed, the first absorption layers 149a and 249a may be omitted. This is because the gate pad and the auxiliary electrode or data pad formed thereon are made of a metal material. That is, since the laser cannot pass through the metal material and is reflected, it cannot penetrate into the bottom of the metal material.

5 is a graph showing the laser absorption rate for each material.

Hereinafter, it will be described with reference to FIG. 4 and Table 1 below.

Laser Type

Water absorption (%) SiON SiNx ITO MoTi 0.5 um 0.5 um 0.13 um 0.03 um 248nm gas 37% 40% 97% 96% 266nm solid 24% 22% 96% 96% 355nm solid 3% 13% 55% 95% 532nm solid 0% 6% 12% 91%

It can be seen that the laser absorption rate of indium-tin-oxide (ITO) or molitanium (MoTi) is increased to 90% or more for a laser having 248 nm.

Therefore, in the present invention, in order to prevent the lifting phenomenon and to remove the encapsulation layer formed in the non-display area (NAA) through a laser, a material capable of absorbing more than 90% of a laser having 248 nm as the laser absorption layer 149, for example, As indium-tin-oxide (ITO) or molitanium (MoTi) can be used.

The embodiments of the present invention described above are merely exemplary, and those of ordinary skill in the art to which the present invention pertains may be freely modified within the scope of the gist of the present invention. Accordingly, the scope of protection of the present invention includes modifications of the present invention within the scope of the appended claims and equivalents thereto.

100: organic light emitting diode display
122: gate pad 138: auxiliary electrode
149: laser absorption layer 149a: first laser absorption layer
149b: second laser absorption layer 161: first encapsulation layer
162: second encapsulation layer 163: third encapsulation layer

Claims (21)

In the organic light emitting diode display device comprising a display area and a non-display area,
An organic light emitting diode formed in the display area;
An insulating film formed in the non-display area;
A pad formed on the insulating layer;
A first laser absorbing layer formed to cover the insulating layer
Including,
Further comprising a second laser absorbing layer formed by overlapping with the pad,
The first laser absorbing layer and the second laser absorbing layer are spaced apart from each other,
The first and second laser absorbing layers are formed of at least one of indium-tin-oxide (ITO) and molitanium (MoTi).
The method of claim 1,
An interlayer insulating layer having a pad contact hole exposing the pad above the pad,
Further comprising an auxiliary electrode formed in contact with the pad through the pad contact hole,
The organic light emitting diode display device, wherein the first laser absorbing layer is formed to cover the interlayer insulating layer.
The method of claim 2,
The second laser absorbing layer is formed by overlapping the auxiliary electrode.
The method of claim 3,
The organic light emitting diode display device, wherein the first laser absorbing layer and the auxiliary electrode are spaced apart from each other.
delete The method of claim 1,
The organic light emitting diode display device, wherein the first laser absorbing layer and the pad are spaced apart from each other.
The method of claim 1,
The first and second laser absorption layers absorb 90% or more of a laser having a wavelength of 300 nm or less.
delete The method of claim 2,
A semiconductor layer formed on the substrate, comprising a central first region and a second region respectively positioned on both sides of the first region,
An insulating film formed over the semiconductor layer,
A gate electrode formed on the insulating layer,
The interlayer insulating layer formed on the gate electrode and including first and second semiconductor contact holes each exposing the second region;
A source and drain electrode in contact with the second region exposed through the first and second semiconductor contact holes,
The organic light emitting diode display device, wherein the substrate is a flexible substrate.
The method of claim 3,
And a driving IC electrically connected to the auxiliary electrode through the second laser absorption layer.
The method of claim 1,
The organic light emitting diode includes a first electrode, an organic light emitting layer, and a second electrode,
The organic light emitting diode display device, wherein the first laser absorbing layer is formed of the same material on the same layer as the first electrode.
Forming an insulating layer of an insulating material on the non-display area on a substrate in which the display area and the non-display area in which the organic light emitting diode is formed are divided;
Forming a pad on the insulating layer; And
Forming a first laser absorbing layer to cover the insulating layer
Including,
Further comprising forming a second laser absorbing layer overlapping with the pad at the same time when forming the first laser absorbing layer,
The first laser absorbing layer and the second laser absorbing layer are spaced apart from each other,
The first and second laser absorbing layers are made of at least one of indium-tin-oxide (ITO) and molitanium (MoTi).
The method of claim 12,
Forming an interlayer insulating layer having a pad contact hole exposing the pad above the pad including the insulating layer,
Further comprising forming an auxiliary electrode in contact with the pad through the pad contact hole,
The method of manufacturing an organic light emitting diode display device, wherein the first laser absorbing layer is formed to cover the interlayer insulating layer.
The method of claim 13,
The second laser absorbing layer overlaps the auxiliary electrode,
The first laser absorbing layer and the second laser absorbing layer, and the first laser absorbing layer and the auxiliary electrode are spaced apart from each other.
The method of claim 13,
The method of manufacturing an organic light emitting diode display device, wherein the first laser absorbing layer and the pad are spaced apart from each other.
The method of claim 12,
The first and second laser absorption layers absorb 90% or more of a laser having a wavelength of 300 nm or less.
The method of claim 16,
Forming a semiconductor layer on the display area,
Forming the insulating film over the semiconductor layer,
Forming a gate electrode over the insulating layer,
Forming an interlayer insulating film including first and second semiconductor contact holes respectively exposing the second regions of the semiconductor layer above the gate electrode; and
And forming a source and a drain electrode respectively contacting the second region through the first and second semiconductor contact holes.
The method of claim 12,
Forming a sacrificial layer on the base substrate,
Forming a flexible layer constituting the substrate by coating a polymer material on the sacrificial layer, and
And forming the substrate by removing the flexible layer using the sacrificial layer.
The method of claim 14 or 15,
And bonding a driving IC to an upper portion of the second laser absorbing layer.
The method of claim 12,
Forming an encapsulation layer for protecting the organic light-emitting diode on the entire surface of the substrate on which the organic light-emitting diode is formed,
And removing the encapsulation layer formed in the non-display area by irradiating a laser on the non-display area.
The method of claim 12,
The step of forming the organic light-emitting diode,
Forming a first electrode for each pixel area,
Forming an organic light-emitting layer over the first electrode,
Forming a second electrode on the entire surface of the substrate on which the organic emission layer is formed,
The method of manufacturing an organic light emitting diode display device, wherein the first laser absorbing layer is formed in the step of forming the first electrode.

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