KR102652822B1 - Electroluminescent display device - Google Patents

Abstract

The present invention relates to an electroluminescence display device, wherein the electroluminescence display device includes at least one crack prevention hole formed in at least one insulating film among a plurality of insulating films located in a non-display area, and below the at least one crack prevention hole. A lower insulating film positioned over the at least one crack prevention hole and an upper insulating film positioned over the at least one crack prevention hole contact each other through the at least one crack prevention hole.

Description

Electroluminescent display device {ELECTROLUMINESCENT DISPLAY DEVICE}

The present invention relates to an electroluminescent display device. More specifically, the present invention relates to an electroluminescent display device, and more specifically, to a pad area located outside a display area where cracks frequently occur during the manufacture of a display device, or to a non-display area including the pad area. It relates to an electroluminescent display device that can minimize the occurrence of cracks by forming line holes and providing stepped portions.

Organic electroluminescent devices, one of the flat panel displays (FPD), have high brightness and low operating voltage characteristics. In addition, since it is a self-luminous type that emits light on its own, it has a high contrast ratio, enables the implementation of an ultra-thin display, has a response time of several microseconds (μs), makes it easy to spherical a moving image, has no viewing angle limitations, and has low temperature. It is stable and operates at a low voltage of 5 to 15 V DC, making it easy to manufacture and design the driving circuit.

In addition, the manufacturing process of the organic electroluminescent device is very simple because it can be said to consist entirely of deposition and encapsulation equipment.

Organic electroluminescent devices with these characteristics are largely divided into passive matrix type and matrix type. In the passive matrix method, the device is formed in a matrix form with scan lines and signal lines intersecting, and each pixel is Since the scanning lines are driven sequentially according to time, in order to display the required average luminance, an instantaneous luminance equal to the average luminance multiplied by the number of lines must be produced.

However, in the active matrix method, a thin film transistor (TFT), which is a switching element that turns the pixel area on/off, is located in each pixel area, and is connected to this switching thin film transistor and a driving thin film transistor. It is connected to the power wiring and organic light emitting diode, and is formed for each pixel area.

At this time, the first electrode connected to the driving thin film transistor is turned on/off in units of pixel areas, and the second electrode facing the first electrode acts as a common electrode and is interposed between these two electrodes. Together with the organic light-emitting layer, it forms the organic electroluminescent diode.

In the active matrix method with these characteristics, the voltage applied to the pixel area is charged in the storage capacitor (Cst), allowing power to be applied until the next frame signal is applied, regardless of the number of scanning lines. It continues to run during the screen.

Therefore, since it shows the same luminance even when a low current is applied, it has the advantages of low power consumption, high definition, and large size, so recently, active matrix type organic electroluminescent devices have been mainly used.

From this perspective, the organic electroluminescent device according to the prior art will be described with reference to FIGS. 1 and 2 as follows.

Figure 1 is a plan view schematically showing an organic electroluminescence device according to the prior art.

FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1, and is a schematic cross-sectional view of an organic electroluminescence device according to the prior art.

Referring to FIG. 1, the organic electroluminescent device 10 according to the prior art has a display area (AA) defined on a substrate (not shown), and a non-display area (AA) having a pad area outside the display area (AA). (not shown) is defined, and the display area (AA) is provided with a plurality of pixel areas (not shown) defined as areas captured by gate wires (not shown) and data wires (not shown). Power wiring (not shown) is provided in parallel with the data wiring (not shown).

Here, a switching thin film transistor (STr, not shown) and a driving thin film transistor (DTr, not shown) are formed in each of the plurality of pixel areas (not shown), and are connected to the driving thin film transistor (DTr).

The organic electroluminescent device 10 according to the prior art includes a substrate (not shown; see 11 in FIG. 2) on which the driving thin film transistor (DTr) and the organic electroluminescent element (E) are formed, and a protective film (not shown; see 47 in FIG. 2). It is encapsulated by reference).

Describing the organic electroluminescent device according to the prior art in detail, as shown in FIG. 2, a display area (AA) is defined on the substrate 11, and a pad area (PD) is formed outside the display area (AA). A non-display area (not shown) is defined including, and the display area (AA) includes a plurality of pixel areas (not shown) defined as areas captured by gate wires (not shown) and data wires (not shown). ) is provided, and a power wire (not shown) is provided in parallel with the data wire (not shown).

Here, a polyimide layer 15 is formed on the glass substrate 11, and a sacrificial layer 13 is formed between the polyimide layer 15 and the substrate 11.

A buffer layer 17 made of an insulating material, such as silicon oxide (SiO2) or silicon nitride (SiNx), which is an inorganic insulating material, is formed on the polyimide layer 15.

In addition, each pixel area in the display area (AA) above the buffer layer 17 is made of pure polysilicon corresponding to the driving area (not shown) and the switching area (not shown), and the central part forms a channel. An active layer 19 consisting of a channel region 19a and a source region 19b and a drain region 19c doped with a high concentration of impurities is formed on both sides of the channel region 19a.

A gate insulating film 21 is formed on the buffer layer 17 including the active layer 19, and above the gate insulating film 21 in the driving region (not shown) and switching region (not shown), each of the active layers ( A gate electrode 23 is formed corresponding to the channel region 19a of 19).

Additionally, a gate wiring (not shown) is formed on the gate insulating film 21, which is connected to the gate electrode 23 formed in the switching region (not shown) and extends in one direction.

Meanwhile, an interlayer insulating film 25 is formed on the entire display area above the gate electrode 23 and the gate wiring (not shown). At this time, the interlayer insulating film 25 and the gate insulating film 21 below it have contact holes exposing each of the source region 19b and the drain region 19c located on both sides of the channel region 19a of each active layer. It is provided.

In addition, on the upper part of the interlayer insulating film 25 including the contact hole, there is a data wire (not shown) that intersects the gate wire (not shown), defines the pixel area, and is made of a metal material, and a power wire (not shown) is spaced apart from this. (not shown) has been formed. At this time, the power wiring (not shown) may be formed parallel to and spaced apart from the gate wiring (not shown) on the layer where the gate wiring (not shown) is formed, that is, on the gate insulating film.

In addition, the source region 19b and the drain region 19c are spaced apart from each other in each of the driving region (not shown) and switching region (not shown) above the interlayer insulating film 25 and are exposed through the contact hole (not shown). ) and a source electrode (27a) and a drain electrode (27b) made of the same metal material as the data wire (not shown) are formed. At this time, the source electrode 27a and the drain formed to be spaced apart from the active layer 19, the gate insulating film 21, the gate electrode 23, and the interlayer insulating film 25 sequentially stacked in the driving area (not shown). The electrode 27b forms a driving thin film transistor.

Meanwhile, above the driving thin film transistor and the switching thin film transistor (not shown), a first passivation film 31 and a planarization film 33 having a drain contact hole (not shown) exposing the drain electrode 27b of the driving thin film transistor. ) is formed.

In addition, a first electrode 35 is formed on the planarization film 33, which contacts the drain electrode 27b of the driving thin film transistor through the drain contact hole and has a separate shape for each pixel region.

Additionally, a pixel defining layer 37 is formed on the first electrode 35 to separate each pixel region. At this time, the pixel defining layer 37 is disposed between adjacent pixel areas.

An organic light-emitting layer 39 composed of light-emitting layers (not shown) that emit red, green, and blue light is formed on the first electrode 35 in each pixel area surrounded by the pixel defining layer 37.

In addition, a second electrode 41 is formed on the organic light emitting layer 39 and the pixel defining layer 37 in the entire display area (AA). At this time, the first electrode 35 and the second electrode 41 and the organic light-emitting layer 39 interposed between these two electrodes 35 and 41 constitute an organic electroluminescent device (E).

An organic layer 43 is formed on the entire surface of the substrate including the second electrode 41, and a second passivation layer 45 is formed on it.

And, on the second passivation film 45, it is located opposite to a barrier film 47 to prevent encapsulation of the organic electroluminescent device (E) and upper moisture permeation, and the substrate 11 ) and the protective film 47, an adhesive (Press Sensitive Adhesive; hereinafter referred to as PSA) (not shown) is interposed in complete contact with the substrate 11 and the protective film 47 without an air layer, and the protective film ( 47) A polarizing plate 53 is disposed at the top. At this time, the passivation film 39, adhesive 41, and protective film 47 form a face seal structure.

In this way, the substrate 11 and the barrier film 47 are fixed with an adhesive (not shown) to form a panel, thereby forming the organic electroluminescence device 10 according to the prior art.

In order to make the organic electroluminescent device 10 composed of the above configuration into a plastic organic electroluminescent device, first, the back of the substrate 11 of the organic electroluminescent device 10 is cleaned, and then the substrate 11 is formed through laser irradiation. The substrate 11 is separated from the organic electroluminescent device 10 by separating the sacrificial layer 13 between the polyimide layer 15 and the polyimide layer 15 by heat.

Next, a back plate (not shown) is laminated on the surface of the polyimide layer 15 of the separated organic electroluminescent device 10 to form a plastic organic electroluminescent device.

However, when performing a peeling process of the substrate 10 from the organic electroluminescent device 10 to manufacture a plastic organic electroluminescent device according to the prior art, the protective film constituting the organic electroluminescent device 10 (47), the organic electroluminescent device 10 is bent due to the internal stress of the polarizer 53 and the thin film transistor unit.

Figure 3 is a schematic perspective view of an organic electroluminescent device according to the prior art, schematically showing the occurrence of a curl phenomenon in the organic electroluminescent device due to cracks being transmitted from the pad area of the organic electroluminescent device.

As shown in FIG. 3, during the process of laminating a back plate (not shown) on the surface of the polyimide layer 15 from which the substrate 11 was peeled off, it becomes vulnerable due to repeated bending and unfolding. A crack (C) occurs in an area, for example, the pad area (PD) where the printed circuit board (FPCB) is connected, and this crack (C) spreads to the thin film transistor part inside the device, resulting in a defect in the organic electroluminescent device. will result in In particular, after removal of the substrate, most of the layers constituting the pad area (PD) are made of inorganic films, and the polyimide layer 15 also has a large degree of brittle, making it very vulnerable to cracks.

Therefore, when manufacturing a plastic organic electroluminescent device according to the prior art, a crack (C) is generated in the pad area (PD) where the printed circuit board (FPCB), which is a vulnerable area, is connected due to repeated bending and unfolding, and this crack ( C) is transferred to the thin film transistor inside the device, causing defects in the organic electroluminescent device.

In addition, cracks that occur in this way grow through subsequent processes and cause interference with the signal lines of the panel, resulting in poor operation and other screen defects.

The present invention is to solve the problems of the prior art, and the purpose of the present invention is to create a pad area (PD) to which a printed circuit board (FPCB), which is a vulnerable area due to repeated bending and unfolding during the manufacturing of a display device, is connected, or An electroluminescence display that minimizes damage to the electroluminescence display device by forming line hole patterns on the surface of multiple inorganic films located in non-display areas, including the pad area, to divert the path of cracks and prevent them from spreading inside the device. To provide a device and a manufacturing method thereof.

An electroluminescent display device according to the present invention for achieving the above object includes a display area including a plurality of pixel areas, and a non-display area located outside the display area and having sides shorter than the sides of the display area. and a crack prevention hole located in the non-display area, disposed along the display area, and extending adjacent to a short side of the non-display area.

Here, the crack prevention hole may have a bent part and a straight part.

The non-display area may include a first area having a long side that is larger than the short side and a second area having the short side, and the bent part of the crack prevention hole may be a corner where the first area is in contact with the second area.

It may further include a flexible printed circuit board connected to the pad area of the non-display area.

The flexible printed circuit board may overlap the crack prevention hole.

The display area and the non-display area formed on the substrate include a buffer layer, a gate insulating film, an interlayer insulating film, a planarization film, and a lower passivation film, and the crack prevention hole is a hole in the non-display area where the interlayer insulating film is removed. , the lower lower passivation film may be located on the crack prevention hole.

The crack prevention hole includes a first hole pattern having a bent portion surrounding a trimming line located at the periphery of the pad area, and a straight portion extending from the first hole pattern and surrounding the display area in the non-display area. It may be provided with a second hole pattern.

An insulating film below the crack prevention hole may be in contact with another insulating film above the crack prevention hole and may fill the crack prevention hole.

The electroluminescent display device and its manufacturing method according to the present invention include a pad area (PD) to which a printed circuit board (FPCB), which is a vulnerable area due to repeated bending and unfolding during display device manufacturing, is connected, or a pad area including this pad area. Damage to the electroluminescent display device can be minimized by forming line hole patterns on the surface of multiple inorganic films located in the display area, such as gate insulating film, interlayer insulating film, or passivation film, thereby diverting the path of cracks and preventing them from spreading inside the device. You can.

In particular, by forming multiple line hole patterns at weak points adjacent to the scribe line, when a crack occurs, the line is broken at the weak point and the path of the crack is diverted, making the panel a critical point. Wiring cracks can be prevented.

In addition, in the electroluminescent display device and its manufacturing method according to the present invention, when manufacturing the display device, chamfering cutting is performed on the trimming line defined on the upper and lower edges of the pad area of the panel. A curved hole pattern surrounding the trimming line is formed on the upper and lower edges of the pad area, and a bypass step is created to prevent cracks from penetrating into the panel from the cut trimming line. By forming this, cracks are prevented from being transmitted from the upper and lower edges of the pad area to the display area.

In addition, the electroluminescent display device and its manufacturing method according to the present invention are applied to the upper and lower edges of the non-display area located on the opposite side of the pad area of the panel in addition to the upper and lower edges of the pad area when manufacturing the display device. Chamfering cutting is also performed on the defined trimming line, and a line hole pattern is formed in the non-display area extending from the curved hole pattern of the pad area to surround the display area. By forming a bypass step to prevent cracks from penetrating into the inside of the panel from the trimming line of the non-display area that is cut by forming it as one piece, cracks are displayed from the trimming line of the non-display area. Prevents transmission to the area.

Figure 1 is a plan view schematically showing an organic electroluminescence device according to the prior art.
FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1, and is a schematic cross-sectional view of an organic electroluminescence device according to the prior art.
Figure 3 is a schematic perspective view of an organic electroluminescent device according to the prior art, and is a diagram schematically showing the occurrence of a curl phenomenon in the organic electroluminescent device due to cracks being transmitted from the pad area of the organic electroluminescent device.
Figure 4 is a plan view schematically showing an electroluminescence display device according to the present invention.
FIG. 5 is a cross-sectional view taken along line V-V of FIG. 4 and is a schematic cross-sectional view of the electroluminescent display device according to the present invention.
Figure 6 is a schematic cross-sectional view showing an enlarged view of the pad area of the electroluminescent display device according to the present invention.
7A to 7S are cross-sectional views of the manufacturing process of the electroluminescent display device according to the present invention.
Figure 8 is a schematic perspective view of an electroluminescence display device according to the present invention.
Figure 9 is an enlarged plan view schematically showing the pad area of the electroluminescence display device according to the present invention, and is a plan view schematically showing a state in which cracks are diverted along a plurality of line hole patterns.
Figure 10 is a perspective view schematically showing another example of a line hole pattern in a pad area of an electroluminescent display device according to the present invention.
Figure 11 is a perspective view schematically showing another example of a line hole pattern of an electroluminescent display device according to the present invention.

Hereinafter, an electroluminescence display device according to a preferred embodiment of the present invention will be described in detail.

The configuration of the present invention and its operational effects will be clearly understood through the detailed description below. Prior to the detailed description of the present invention, please note that the same components are indicated by the same symbols as much as possible even if they are shown in different drawings, and detailed descriptions of known components will be omitted if it is judged that they may obscure the gist of the present invention. do.

The electroluminescent display device according to the present invention is divided into a top emission type and a bottom emission type according to the transmission direction of the emitted light. Hereinafter, the bottom emission type will be described as an example in the present invention. would.

An electroluminescent display device according to a preferred embodiment of the present invention will be described in detail with reference to the attached drawings.

Figure 4 is a plan view schematically showing an electroluminescence display device according to the present invention.

FIG. 5 is a cross-sectional view taken along line V-V of FIG. 4 and is a schematic cross-sectional view of the electroluminescent display device according to the present invention.

Figure 6 is a schematic cross-sectional view showing an enlarged view of the pad area of the electroluminescence display device according to the present invention.

Referring to FIG. 4, in the electroluminescent display device according to the present invention, a substrate 101 on which a driving thin film transistor (DTr, not shown) and an organic electroluminescent element (E) are formed is encapsulated by a protective film 151. (encapsulation).

Describing the electroluminescent display device according to the present invention in detail, as shown in FIGS. 4 and 5, a display area (AA) is defined on a glass substrate 101, and a display area (AA) is defined outside the display area (AA). A non-display area (NA) including a pad area (PD) is defined, and the display area (AA) contains a plurality of pixels defined as an area captured by a gate wire (not shown) and a data wire (not shown). An area (not shown) is provided, and a power wire (not shown) is provided parallel to the data wire (not shown).

Here, the glass substrate 101 is peeled off after manufacturing the organic electroluminescence device, and a plastic back plate (not shown, see 161 in FIG. 7S) is laminated on the peeled portion. The back plate ( 161) is made of a flexible glass substrate or plastic material that has flexible characteristics so that the electroluminescence display device can maintain display performance even if it is bent like paper.

In addition, a polyimide layer 105, which is an organic material, is formed on the substrate 101, and an inorganic insulating material, such as silicon oxide (SiO2) or silicon nitride, is formed on the polyimide layer 105. A buffer layer 107 consisting of a multi-layer structure made of (SiNx) is formed. At this time, the reason for forming the buffer layer 107 below the active layer 109 formed in a subsequent process is the active layer ( 109) This is to prevent deterioration of the characteristics.

A sacrificial layer 103 made of amorphous silicon or silicon nitride (SiNx) is formed between the substrate 101 and the polyimide layer 105. The sacrificial layer 103 is formed by a laser after manufacturing an organic electroluminescent device. It serves to facilitate peeling of the substrate 101 from the polyimide layer 105 through the irradiation process.

In addition, each pixel area (not shown) in the display area (AA) above the buffer layer 107 is made of pure polysilicon corresponding to the driving area (not shown) and the switching area (not shown), and the central part thereof is made of pure polysilicon. An active layer 109 consisting of a channel region 109a forming a channel and a source region 109b and a drain region 109c doped with a high concentration of impurities is formed on both sides of the channel region 109a.

A gate insulating film 113 is formed on the buffer layer 107 including the active layer 109, and each of the active layers ( A gate electrode 115a is formed corresponding to the channel region 109a of 109). At this time, at least one line hole pattern (not shown) will be formed on the gate insulating film 113 located in the pad area PD in the long side direction of the pad area, that is, opposite to the display area AA. You can.

Additionally, a gate wiring (not shown) is formed on the gate insulating film 113, which is connected to the gate electrode 115a formed in the switching region (not shown) and extends in one direction. At this time, the gate electrode 115a and the gate wiring (not shown) are made of a first metal material with low resistance characteristics, for example, aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum ( It may have a single-layer structure by being made of any one of Mo) and moly titanium (MoTi), or it may have a double-layer or triple-layer structure by being made of two or more of the first metal materials. In the drawing, it is shown as an example that the gate electrode 115a and the gate wiring (not shown) have a single-layer structure.

Meanwhile, an interlayer insulating film 121 made of an insulating material, for example, silicon oxide (SiO2) or silicon nitride (SiNx), which is an inorganic insulating material, is formed on the entire display area of the substrate including the gate electrode 115a and the gate wiring (not shown). ) is formed. At this time, the source region 109b and the drain region 109c located on both sides of the channel region 109a of the active layer 109 are exposed to the interlayer insulating film 121 and the gate insulating film 113 below it, respectively. An active layer contact hole is provided.

Additionally, at least one first line hole pattern 125c is formed on the interlayer insulating film 121 located in the pad area PD. At this time, the first line hole pattern 125c is formed in the long side direction of the pad area PD, that is, opposite to the display area AA.

Additionally, the interlayer insulating film 121 including the active layer contact hole intersects the gate wiring (not shown), defines the pixel area (not shown), and is formed of a second metal material, such as aluminum (Al). , data wiring (not shown) made of one or more of aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), moly titanium (MoTi), chromium (Cr), and titanium (Ti). And, a power wiring (not shown) is formed spaced apart from this. At this time, the power wiring (not shown) may be formed parallel to the gate wiring (not shown) on the layer where the gate wiring (not shown) is formed, that is, on the gate insulating film 113.

Moreover, each driving region (not shown) and switching region (not shown) on the interlayer insulating film 121 are spaced apart from each other and are in contact with the source region 109b and drain region 109c exposed through the active layer contact hole, respectively. A source electrode 127a and a drain electrode 127b are formed of the same second metal material as the data wire (not shown). At this time, the source electrode 127a and the drain formed to be spaced apart from the active layer 109, the gate insulating film 113, the gate electrode 115a, and the interlayer insulating film 121 sequentially stacked in the driving area (not shown). The electrode 127b constitutes a driving thin film transistor (DTr).

Meanwhile, in the drawing, the data wiring (not shown), the source electrode 127a, and the drain electrode 127b all have a single-layer structure, but these components may also have a double-layer or triple-layer structure. there is.

At this time, although not shown in the drawing, a switching thin film transistor (not shown) having the same stacked structure as the driving thin film transistor (DTr) is also formed in the switching region (not shown). At this time, the switching thin film transistor (not shown) is electrically connected to the driving thin film transistor (DTr), the gate wire (not shown), and the data wire (not shown). That is, the gate wire (not shown) and the data wire (not shown) are connected to the gate electrode (not shown) and the source electrode (not shown) of the switching thin film transistor (not shown), respectively, and the switching thin film transistor (not shown) The drain electrode (not shown) is electrically connected to the gate electrode 115a of the driving thin film transistor.

Meanwhile, in the electroluminescent display device according to the present invention, the driving thin film transistor (DTr) and the switching thin film transistor (not shown) have an active layer 109 of polysilicon and are configured as a top gate type. However, the driving thin film transistor and the switching thin film transistor (not shown) may also be configured as a bottom gate type having an active layer of amorphous silicon.

When the driving thin film transistor (DTr) and the switching thin film transistor (STr) (not shown; STr) are configured as a bottom gate type, the stacked structure is spaced apart from the gate electrode/gate insulating film/active layer of pure amorphous silicon and the impurity amorphous silicon. It consists of an active layer consisting of an ohmic contact layer, and a source electrode and a drain electrode spaced apart from each other. At this time, the gate wire is formed to be connected to the gate electrode of the switching thin film transistor on the layer where the gate electrode is formed, and the data wire is formed to be connected to the source electrode in the layer where the source electrode of the switching thin film transistor is formed.

Meanwhile, above the driving thin film transistor (DTr) and the switching thin film transistor (not shown), a passivation film 131 having a drain contact hole (not shown) exposing the drain electrode 127b of the driving thin film transistor (DTr) and A planarization film 133 is stacked. At this time, an insulating material, for example, an inorganic insulating material such as silicon oxide (SiO2) or silicon nitride (SiNx) is used as the interlayer insulating film 121. Additionally, the planarization film 133 is selected from the group of organic materials including photo acryl.

Meanwhile, at least one second line hole pattern 135b is formed in a portion of the passivation film 131 located in the pad area PD. At this time, the second line hole pattern 135b is formed in the long side direction of the pad area PD, that is, opposite to the display area AA. At this time, the at least one second line hole pattern 135b may be formed to overlap or not overlap the first line hole pattern 125c below it.

In addition, a first electrode ( 137) has been formed. At this time, the first electrode 137 may be provided as a transparent electrode or a reflective electrode. When used as a transparent electrode, it may be provided as ITO, IZO, ZnO, or In2O3, and when used as a reflective electrode, it may be provided as Ag, After forming a reflective film with Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and their compounds, ITO, IZO, ZnO, or In2O3 may be formed thereon.

And, above the first electrode 137, a pixel definition is made of an insulating material, particularly bensocyclobutene (BCB), poly-imide, or photo acryl, in the border area of each pixel area. A film 139 is formed. At this time, the pixel defining layer 139 is formed to surround each pixel area (not shown) and overlaps the edge of the first electrode 137, and has a plurality of openings throughout the display area AA. It has a grid shape.

An organic light emitting layer 141 made of an organic material that emits red, green, and blue light is formed on the first electrode 137 in each pixel area surrounded by the pixel defining layer 139. The organic light-emitting layer 141 may be composed of a single layer made of an organic light-emitting material, or, although not shown in the drawing, may include a hole injection layer, a hole transport layer, and an emitting layer to increase light emission efficiency. It may be composed of multiple layers of a material layer, an electron transporting layer, and an electron injection layer.

Additionally, a second electrode 143 is formed on the entire surface of the display area AA including the organic light emitting layer 141 and the pixel defining layer 139. At this time, the first electrode 137, the second electrode 143, and the organic light-emitting layer 141 interposed between these two electrodes 137 and 141 constitute an organic electroluminescent device (E).

Accordingly, when a predetermined voltage is applied to the first electrode 137 and the second electrode 143 according to the selected color signal, the organic electroluminescent device (E) generates holes injected from the first electrode 137 and the second electrode 143. Electrons provided from the electrode 143 are transported to the organic light-emitting layer 141 to form excitons, and when these excitons transition from the excited state to the ground state, light is generated and emitted in the form of visible light. At this time, the emitted light passes through the transparent second electrode 143 and goes out, so the plastic organic electroluminescent device implements an arbitrary image.

Meanwhile, a lower passivation film 145 made of an insulating material, particularly silicon oxide (SiO2) or silicon nitride (SiNx), which is an inorganic insulating material, is formed on the entire surface of the substrate including the second electrode 143. At this time, since the second electrode 143 alone cannot completely suppress moisture penetration into the organic light emitting layer 141, the organic light emitting layer (141) is formed by forming the lower passivation film 145 on the second electrode 143. 141), moisture penetration can be completely suppressed.

Additionally, an organic layer 147 made of a high molecular weight organic material such as a polymer is formed in the display area AA on the lower passivation layer 145. At this time, the polymer thin film constituting the organic film 147 includes olefin polymers (polyethylene, polypropylene), polyethylene terephthalate (PET), epoxy resin, fluoro resin, polysiloxane, etc. This can be used.

In addition, the front surface of the substrate including the organic layer 147 is coated with an insulating material, for example, silicon oxide (SiO2) or silicon nitride (SiNx), which are inorganic insulating materials, to block moisture from penetrating through the organic layer 147. An upper passivation film 149 composed of is additionally formed.

A protective film 151 is positioned opposite to the front surface of the substrate including the upper passivation film 149 for encapsulation of the organic light emitting device (E), between the substrate 101 and the protective film 151. An adhesive (not shown) made of any one of a frit, an organic insulating material, and a polymer material that is transparent and has adhesive properties is interposed in complete contact with the substrate 101 and the protective film 151 without an air layer. and a polarizing plate 153 is disposed on the protective film 151.

In this way, the substrate 101 and the barrier film 151 are fixed with an adhesive (not shown) to form a panel, thereby forming an organic electroluminescent device according to the present invention.

In addition, in order to make the electroluminescent display device configured as above into a plastic electroluminescent display device, first, the back side of the substrate 101 of the electroluminescent display device is cleaned, and then the substrate 101 and the polyimide layer are formed through laser irradiation. The substrate 101 is peeled from the electroluminescent display device by allowing the sacrificial layer 103 interposed between the layers 105 to be separated by heat.

Afterwards, a plastic electroluminescent display device is formed by laminating a back plate (not shown) on the surface of the polyimide layer 105 of the separated electroluminescent display device.

As such, according to the electroluminescent display device according to the present invention, a plurality of weapons are located in the pad area (PD) where the printed circuit board (FPCB), which is a vulnerable area due to repeated bending and unfolding during the manufacturing of the display device, is connected. Damage to the electroluminescent display device can be minimized by forming line hole patterns on the surface of the film, that is, the gate insulating film, the interlayer insulating film, or the passivation film, thereby diverting the path of the crack and preventing it from spreading inside the device.

In particular, by forming a plurality of line hole patterns at weak points adjacent to the scribe line (SL), when a crack occurs, the line is broken at the weak point and the path of the crack is diverted, creating a critical point. In-panel wiring cracks can be prevented.

Meanwhile, the method for manufacturing a plastic organic electroluminescent device according to the present invention will be described with reference to FIGS. 7A to 7S as follows.

7A to 7S are cross-sectional process views schematically showing a method of manufacturing an electroluminescent display device according to the present invention.

As shown in FIG. 7A, a substrate 101 made of glass is prepared with a display area (AA) and a non-display area (NA) including a pad area (PD) outside the display area (AA). . At this time, the substrate 101 is peeled off after manufacturing the organic electroluminescent device, and a plastic back plate (not shown, see 161 in FIG. 7S) is laminated on the peeled portion. The back plate 161 is Plastic organic electroluminescent devices (OLEDs) are made of flexible glass substrates or plastic materials that have flexible characteristics so that they can maintain display performance even when bent like paper.

Next, a polyimide layer 105, which is an organic material, is formed on the substrate 101, and an inorganic insulating material, such as silicon oxide (SiO2), is formed on the polyimide layer 105. Alternatively, the buffer layer 107 is formed with a multi-layer structure made of silicon nitride (SiNx). At this time, the reason for forming the buffer layer 107 below the active layer 109 formed in a subsequent process is the active layer ( 109) This is to prevent deterioration of the characteristics.

A sacrificial layer 103 made of amorphous silicon or silicon nitride (SiNx) is formed between the substrate 101 and the polyimide layer 105. The sacrificial layer 103 is formed by a laser after manufacturing an organic electroluminescent device. It serves to facilitate peeling of the substrate 101 from the polyimide layer 105 through the irradiation process.

Each pixel area in the upper display area (AA) is made of pure polysilicon corresponding to the driving area (not shown) and the switching area (not shown), the central part of which is a channel area (109a) forming a channel, and the An active layer 109 composed of a source region 109b and a drain region 109c doped with a high concentration of impurities is formed on both sides of the channel region 109a.

Next, as shown in FIG. 7B, an active layer 109 is formed on the buffer layer 107. At this time, the active layer 109 is made of pure polysilicon corresponding to the driving area (not shown) and the switching area (not shown) in each pixel area within the display area AA.

Subsequently, as shown in FIG. 7C, a first photoresist film (not shown) is applied on the buffer layer (not shown), and the first photoresist film (not shown) is selectively patterned through an exposure process and a development process to form a first photoresist film. 1 Form a photoresist pattern 111.

Next, as shown in FIG. 7D, the active layer 109 is selectively removed using the first photoresist pattern 111 as an etch mask.

Subsequently, as shown in FIG. 7E, the first photosensitive film pattern 111 is removed, and a gate insulating film 113 and a first metal material layer 115 are formed on the buffer layer 107 including the active layer 109. are deposited sequentially. At this time, the first metal material layer 115 is a first metal material having low resistance characteristics, for example, aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum (Mo), It may be made of any one of titanium (MoTi) and have a single-layer structure, or it may be made of two or more of the first metal materials and have a double-layer or triple-layer structure. In the drawing, it is shown as an example that the gate electrode and gate wiring (not shown) have a single-layer structure.

Next, after applying a second photoresist film (not shown) on the first metal material layer 115, the second photoresist film (not shown) is selectively patterned through an exposure and development process to form a second photoresist film pattern ( 117).

Subsequently, as shown in FIG. 7F, the first metal material layer 115 is selectively etched using the second photoresist pattern 117 as an etch mask to form a gate electrode 115a. At this time, a gate wiring (not shown) connected to the gate electrode 115a formed in the switching region (not shown) and extending in one direction is formed above the gate insulating film 113.

Next, the second photoresist pattern 117 is removed, and impurities are injected into the active layer 109 below both sides of the gate electrode 115a to create a channel region 109a forming a channel in the center of the active layer 109. And, a source region 109b and a drain region 109c are formed spaced apart from the channel region 109a.

Subsequently, as shown in FIG. 7g, an insulating material, for example, silicon oxide (SiO2) or silicon nitride (SiNx), which is an inorganic insulating material, is applied to the entire display area over the gate electrode 115a and the gate wiring (not shown). An interlayer insulating film 121 is formed.

Next, a third photoresist film (not shown) is applied on top of the interlayer insulating film 121 and then selectively patterned through exposure and development processes to form a third photoresist pattern 123.

Subsequently, as shown in FIG. 7H, the interlayer insulating film 121 and the gate insulating film 113 below it are selectively etched using the third photosensitive film pattern 123 as an etch mask to form a source region of the active layer 109. A source region contact hole 125a and a drain region contact hole 125b that expose 109b and the drain region 109c are formed simultaneously. At this time, when forming the source region contact hole 125a and the drain region contact hole 125b, at least one line hole pattern (125c) is also formed on the portion of the interlayer insulating film 121 located in the pad region PD. ) are also formed. Here, the first line hole pattern 125c is formed in the long side direction of the pad area PD, that is, opposite to the display area AA.

Next, as shown in FIG. 7I, the third photoresist film pattern 123 is removed, and the interlayer insulating film 121 including the first line hole pattern 125c is intersected with a gate wire (not shown). , defines the pixel area (not shown) and forms a second metal material layer 127. At this time, the second metal material layer 127 includes aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), moly titanium (MoTi), chromium (Cr), and titanium (Ti). ) consists of one or two or more substances.

Next, a fourth photoresist film (not shown) is applied on the second metal material layer 127 and then patterned through an exposure and development process to form a fourth photoresist pattern 129.

Next, as shown in FIG. 7J, the second metal material layer 127 is selectively etched using the fourth photoresist pattern 129 as an etch mask to intersect the gate wiring (not shown), and the pixel A data wire (not shown) defining the area P and a power wire (not shown) are formed spaced apart from this. At this time, the power wiring (not shown) may be formed parallel to and spaced apart from the gate wiring (not shown) on the layer where the gate wiring (not shown) is formed, that is, on the gate insulating film.

In addition, when forming the data wire (not shown), the driving area (not shown) and the switching area (not shown) are spaced apart from each other on the interlayer insulating film 121, and the source area contact hole 125a and the drain are formed. A source electrode 127a that contacts the source region 109b and drain region 109c of the active layer 109 through the region contact hole 125b and is made of the same second metal material as the data wire (not shown), and The drain electrode 127b is formed simultaneously. At this time, the active layer 109, gate insulating film 113, gate electrode 115a, and interlayer insulating film 121 sequentially stacked in the driving area (not shown), the source electrode 127a formed to be spaced apart from each other, and The drain electrode 127b constitutes a driving thin film transistor (not shown; DTr).

Meanwhile, in the drawing, the data wiring (not shown), the source electrode 127a, and the drain electrode 127b all have a single-layer structure, but these components may also have a double-layer or triple-layer structure. there is.

At this time, although not shown in the drawing, a switching thin film transistor (not shown) having the same stacked structure as the driving thin film transistor is also formed in the switching region (not shown). The switching thin film transistor (not shown) is electrically connected to the driving thin film transistor, the gate wire (not shown), and the data wire (not shown). That is, the gate wire (not shown) and the data wire (not shown) are connected to the gate electrode (not shown) and the source electrode (not shown) of the switching thin film transistor (not shown), respectively. The drain electrode (not shown) is electrically connected to the gate electrode 115a of the driving thin film transistor.

Meanwhile, in the organic electroluminescent device according to the present invention, the driving thin film transistor and the switching thin film transistor (not shown) have an active layer 109 of polysilicon and are configured as a top gate type. The driving switching thin film transistor and the switching thin film transistor (not shown) may be configured as a bottom gate type with an active layer of amorphous silicon.

When the driving thin film transistor and the switching thin film transistor (not shown) are configured as a bottom gate type, the stacked structure is spaced apart from the gate electrode/gate insulating film/active layer of pure amorphous silicon and consists of an ohmic contact layer of impurity amorphous silicon. It consists of an active layer and a source electrode and a drain electrode spaced apart from each other. At this time, the gate wire is formed to be connected to the gate electrode of the switching thin film transistor on the layer where the gate electrode is formed, and the data wire is formed to be connected to the source electrode in the layer where the source electrode of the switching thin film transistor is formed.

Subsequently, as shown in FIG. 7K, after removing the fourth photosensitive film pattern 129, a passivation film 131 is formed on the entire surface of the substrate including the source electrode 127a and the drain electrode 127b. At this time, the passivation film 131 is made of an insulating material, for example, silicon oxide (SiO2) or silicon nitride (SiNx), which are inorganic insulating materials.

Next, as shown in FIG. 7L, a planarization film 133 made of an organic material is formed on the passivation film 131. At this time, the organic material is a hydrophobic organic material with insulating properties and is formed of one selected from the group consisting of polyacryl, polyimide, polyamide (PA), benzocyclobutene (BCB), and phenol resin. It can be.

Next, as shown in FIG. 7M, the planarization film 133 and the passivation film 131 below it are sequentially etched to form a drain contact hole 135a exposing the drain electrode 127b. At this time, when forming the drain contact hole 135a, at least one second line hole pattern (Line Hole Pattern) 135b is also formed in the portion located in the pad area (PD) of the passivation film 131. Here, the second line hole pattern 135b is formed in the long side direction of the pad area PD, that is, opposite to the display area AA, and the first line hole pattern 125c formed on the interlayer insulating film 121 and It can be formed not to overlap or to overlap.

Next, as shown in FIG. 7N, after depositing a conductive material layer (not shown) on the planarization film 133, the conductive material layer is selectively etched through a mask process to form the drain contact hole 135a. ) and forms a first electrode 137 that is separated for each pixel region. At this time, the conductive material layer (not shown) may be provided as a transparent electrode and a reflective electrode. When used as a transparent electrode, it may be provided as ITO, IZO, ZnO, or In2O3, and when used as a reflective electrode, it may be provided as Ag. , Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and compounds thereof, and then ITO, IZO, ZnO, or In2O3 may be formed thereon.

Subsequently, as shown in FIG. 7O, for example, bensocyclobutene (BCB), polyimide, or photo acryl is applied to the border area of each pixel area on the first electrode 137. An insulating material layer (not shown) is formed.

Next, the insulating material layer (not shown) is selectively patterned to form a pixel defining layer 139. At this time, the pixel defining layer 139 is formed to surround each pixel area and overlaps the edge of the first electrode 137, and the display area AA as a whole has a grid shape with a plurality of openings. there is.

Next, as shown in FIG. 7P, an organic light emitting layer 141 that emits red, green, and blue light is formed on the first electrode 137 in each pixel area surrounded by the pixel defining layer 139. At this time, the organic light emitting layer 141 may be composed of a single layer made of an organic light emitting material, or, although not shown in the drawing, a hole injection layer, a hole transport layer, and a light emitting layer may be added to increase light emitting efficiency. It may be composed of multiple layers of an emitting material layer, an electron transporting layer, and an electron injection layer.

Next, as shown in FIG. 7Q, a second electrode 143 is formed on the entire display area AA including the organic emission layer 141 and the top of the pixel defining layer 139. At this time, the second electrode 143 may be provided as a transparent electrode or a reflective electrode. When used as a transparent electrode, the second electrode 143 is used as a cathode electrode, so a metal with a small work function, such as Li or Ca, is used as a cathode electrode. , LiF/Ca, LiF/Al, Al, Ag, Mg, and their compounds are deposited in the direction of the organic layer 129, and then a transparent electrode forming material such as ITO, IZO, ZnO, or In2O3 is deposited thereon. An auxiliary electrode layer or bus electrode line can be formed. And, when used as a reflective electrode, it is formed by depositing Li, Ca, LiF/Ca, LiF/Al, Al, Ag, Mg, and their compounds on the entire surface.

Therefore, the organic electroluminescent element (E) displays predetermined image information by emitting red, green, and blue light according to the flow of current, and is connected to the drain electrode 127b of the thin film transistor to receive positive power from there. a first electrode 137 that supplies negative power, and a second electrode 143 that is provided to cover the entire pixel and supplies negative power, and is disposed between the first electrode 137 and the second electrode 143 to emit light. It consists of an organic light-emitting layer 141.

The first electrode 137 and the second electrode 143 are insulated from each other by the organic light-emitting layer 141, and voltages of different polarities are applied to the first and second electrodes 137 and 143 to form the organic light-emitting layer ( 141), light is emitted.

Accordingly, when a predetermined voltage is applied to the first electrode 137 and the second electrode 143 according to the selected color signal, this organic light emitting diode (E) generates holes injected from the first electrode 137 and the second electrode 143. Electrons provided from the electrode 141 are transported to the organic light-emitting layer 141 to form excitons, and when these excitons transition from the excited state to the ground state, light is generated and emitted in the form of visible light. At this time, the emitted light passes through the transparent second electrode 143 and goes out, so the plastic organic electroluminescent device implements an arbitrary image.

Subsequently, as shown in FIG. 7R, a lower passivation film 145 made of an insulating material, particularly silicon oxide (SiO2) or silicon nitride (SiNx), which is an inorganic insulating material, is formed on the front surface of the substrate including the second electrode 143. form At this time, since the second electrode 143 alone cannot completely suppress moisture penetration into the organic light-emitting layer 141, the lower passivation film 145 is formed on the second electrode 143 to form the organic light-emitting layer ( 141), moisture penetration can be completely suppressed.

Next, an organic film made of a high-molecular organic material such as a polymer is applied to the display area (AA) and the non-display area (NA) on the lower passivation film 145 through a coating method such as a screen printing method. It forms (147). At this time, the polymer thin film constituting the organic film 147 includes olefin polymers (polyethylene, polypropylene), polyethylene terephthalate (PET), epoxy resin, fluoro resin, polysiloxane, etc. This can be used. The organic layer 147 is formed on the display area AA.

Next, an insulating material, for example, silicon oxide (SiO2) or silicon nitride (SiNx), which is an inorganic insulating material, is applied to the entire surface of the substrate including the organic layer 147 to block moisture from penetrating through the organic layer 147. An upper passivation film 149 composed of is additionally formed.

Next, a protective film 151 is placed against the entire surface of the substrate including the upper passivation film 149 for encapsulation of the organic light emitting device (E). The substrate 101 and the protective film 151 ), an adhesive (not shown) made of any one of a frit, an organic insulating material, and a polymer material that is transparent and has adhesive properties is interposed between them, so that the substrate 101 and the protective film 151 are completely adhered without an air layer. Afterwards, a polarizing plate 153 is attached to the top of the protective film 151.

In this way, the substrate 101 and the barrier film 151 are fixed with an adhesive (not shown) to form a panel, thereby completing the organic electroluminescent device manufacturing process according to the present invention.

Afterwards, as shown in FIG. 7S, in order to make the organic electroluminescent device composed of the above configuration into a plastic organic electroluminescent device, the back side of the substrate 101 of the organic electroluminescent device is cleaned, and then the substrate 101 is cleaned through laser irradiation. The substrate 101 is separated from the organic electroluminescent device by causing the sacrificial layer 103 interposed between the substrate 101 and the polyimide layer 105 to be separated by heat.

Next, a back plate 161 is laminated on the surface of the polyimide layer 105 of the separated organic electroluminescent device, thereby completing the plastic electroluminescent display device manufacturing process according to the present invention.

Figure 8 is a schematic perspective view of an electroluminescence display device according to the present invention.

Figure 9 is an enlarged plan view schematically showing the pad area of the electroluminescence display device according to the present invention, and is a plan view schematically showing a state in which cracks are diverted along a plurality of line hole patterns.

As shown in FIG. 8, a plurality of inorganic films located in the pad area (PD) where the printed circuit board (FPCB) 170, which is a vulnerable area due to repeated bending and unfolding during the manufacturing of the electroluminescent display device, are connected, e.g. For example, line hole patterns 125c and 135b are formed on the surface of the interlayer insulating film 121 or the passivation film 131.

As shown in FIG. 9, the interlayer insulating film 121 located in the pad area (PD) where the printed circuit board (FPCB) 170, which is a vulnerable area due to repeated bending and unfolding during the manufacture of the electroluminescent display device, is connected, or By forming line hole patterns 125c and 135b adjacent to the scribe line SL on the surface of the passivation film 131, cracks generated due to absorption and destruction at weak points during external impact are prevented. The transition path is diverted, thereby minimizing the transition of cracks into the display area.

Meanwhile, another embodiment of the line hole pattern provided in the pad area of the electroluminescent display device according to the present invention will be schematically described with reference to FIG. 10 as follows.

Figure 10 is a perspective view schematically showing another example of a line hole pattern in a pad area of an electroluminescent display device according to the present invention.

In the electroluminescent display device according to the present invention, separate members, for example, cameras or other members, may be disposed in the electroluminescent display device as needed depending on the field of application. In this case, these members are in the display area AA. Since they cannot be placed, the pad area (PD) is used. At this time, since these cameras or other components must be placed in some areas of the pad area (PD), there is a case where the area of the pad area (PD) must be reduced accordingly.

In this case, the area of the pad area PD of the electroluminescent display device according to the present invention is reduced, so the shape of the line hole pattern formed in the pad area PD must also be changed.

At this time, the first and second line hole patterns 225 and 235 according to another embodiment of the present invention are the gate insulating film 113, the interlayer insulating film 121, and the passivation film ( 131) will be explained using the same case as an example.

That is, the first line hole pattern 225 is formed on an interlayer insulating film (not shown, 121), and the second line hole pattern 235 is formed on a passivation film (not shown, see 131 in FIG. 5). This case is explained as an example.

Referring to FIG. 10, the electroluminescent display device 200 according to the present invention has a display area (AA) defined on a substrate (not shown) and includes a pad area (PD) outside the display area (AA). A non-display area (NA) is defined.

A separate space 240 in which cameras or other members can be placed is provided on both edges of the non-display area (NA) adjacent to the pad area (PD). At this time, the pad area PD has a smaller area than that of the first embodiment of the present invention, and as a result, an interlayer insulating film (not shown) or a passivation film (not shown) is formed in the pad area PD. The shapes of the first and second line hole patterns 225 and 235 are also changed.

Here, the central region of each of the first and second line hole patterns 225 and 235 is composed of straight parts 225a and 235a and bent parts 225b and 235b, and the straight parts 225a and 225a are the first and second line hole patterns 225 and 235. It corresponds to the central area of the first and second line hole patterns 225 and 235, and the bent portions 225b and 235b correspond to both side end areas of the first and second line hole patterns 225 and 235.

Therefore, the present invention considers that the area of the pad area (PD) becomes smaller as necessary, and forms bent portions 225b at both end regions of the first and second line hole patterns 225 and 235, thereby improving plastic organic electroluminescence. Damage to the electroluminescent display device can be minimized by diverting the path of cracks caused by shocks caused by repeated bending and unfolding during device manufacturing and preventing them from spreading inside the device.

As such, according to the electroluminescent display device and manufacturing method according to the present invention, a plurality of cells located in the pad area (PD) where the printed circuit board (FPCB), which is a vulnerable area due to repeated bending and unfolding during the manufacturing of the display device, are connected. Damage to the electroluminescent display device can be minimized by forming a line hole pattern on the surface of the inorganic layer, that is, the gate insulating layer, the interlayer insulating layer, or the passivation layer, thereby diverting the path of the crack and preventing it from spreading inside the device.

In particular, by forming a line hole pattern at a weak point adjacent to a scribe line (SL), the panel is a critical point by breaking the line at the weak point and diverting the path of the crack when a crack occurs. Wiring cracks can be prevented.

Meanwhile, another embodiment of a line hole pattern provided in the pad area of the electroluminescent display device according to the present invention will be briefly described with reference to FIG. 11 as follows.

Figure 11 is a perspective view schematically showing another example of a line hole pattern in a pad area of an electroluminescent display device according to the present invention.

The crack prevention hole pattern 325 according to another embodiment of the present invention is at least one of the gate insulating film 113, the interlayer insulating film 121, and the passivation film 131 of the first embodiment of the present invention shown in FIG. 5. The same case as the case formed in will be described as an example. Here, the crack prevention hole pattern 325 will be described by taking the case where it is formed on an interlayer insulating film (121, not shown) as an example.

Referring to FIG. 11, the electroluminescent display device 300 according to the present invention has a display area (AA) on a substrate (not shown) and a non-display area including a pad area (PD) outside the display area (AA). (NA) is defined, and a scribe line (SL) is formed outside the non-display area (NA), and a first trimming line (SL) is formed on the upper and lower edges of the pad area (PD). A trimming line (CL1) is defined, and a second trimming line (CL2) is defined on the upper and lower edges of the non-display area (NA) located on the opposite side of the pad area (PD).

At this time, when manufacturing the flexible electroluminescent display device 300, the first trimming line CL1 defined on the upper and lower edges of the pad area PD of the panel, and the ratio located on the opposite side of the pad area PD Chamfering cutting is performed on the second trimming line CL2 defined on the upper and lower edges of the display area NA.

Referring to FIG. 11, a first hole pattern 325a surrounding the first trimming line CL1 is formed on the upper and lower edges of the pad area PD. The first hole pattern 325a may be formed in a curved or straight shape.

At this time, the first hole pattern 325a forms a bypass step to prevent cracks from penetrating into the panel from the trimming line.

Therefore, because the first hole pattern 325a forms a bypass step to prevent cracks from penetrating into the panel from the first trimming line CL1, the pad area PD Cracks are prevented from being transmitted from the first trimming line CL1 on the upper and lower edges of the screen to the display area AA.

Additionally, referring to FIG. 11, the non-display area (NA) located outside the display area (AA) extends from the first hole pattern 325a of the pad area (PD) to define the display area (AA). The second hole pattern 325b is formed integrally with the first hole pattern 325a to surround the crack prevention hole pattern 325. At this time, the second hole pattern 325b is formed in a straight line. The second hole pattern 325b forms a bypass step to prevent cracks from penetrating into the panel from the second trimming line CL2 of the non-display area NA.

Accordingly, the second hole pattern 325b forms a bypass step to prevent cracks from penetrating into the panel from the second trimming line CL2 of the non-display area NA. Cracks from the trimming line of the non-display area are prevented from being transmitted to the display area.

As described above, the electroluminescent display device and manufacturing method according to the present invention include a first hole pattern surrounding the first trimming line formed on the upper and lower edges of the pad area, and a display extending from the first hole pattern. By forming a crack prevention hole pattern by integrally forming a second hole pattern formed to surround the area, cracks from the first trimming line on the upper and lower edges of the pad area are prevented from being transmitted to the display area. In addition, cracks are prevented from being transmitted from the second trimming line of the non-display area to the display area.

Those skilled in the art to which the present invention pertains will understand that the above-described present invention can be implemented in other specific forms without changing its technical idea or essential features.

Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive. The scope of the present invention is indicated by the claims described below rather than the detailed description above, and all changes or modified forms derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present invention. do.

101: substrate 103: sacrificial layer
105: polyimide layer 107: buffer layer
109: active layer 113: gate insulating film
115a: Gate electrode 121: Interlayer insulating film
125c: first line hole pattern 127a: source electrode
127b: drain electrode 131: passivation film
133: Planarization film 135a: Drain contact hole
135b: second line hole pattern 137: first electrode
139: pixel defining layer 141: organic light emitting layer
143: second electrode 145: lower passivation film
147: organic film 149: upper passivation film
151: protective film 153: polarizer
161: Back Plate

Claims (20)

A display area including a plurality of pixel areas;
a non-display area located outside the display area and having a pad area outside one side of the display area; and
a crack prevention hole provided in at least one inorganic insulating layer in the non-display area by partially removing the inorganic insulating layer;
The non-display area adjacent to the pad area has short sides shorter than one side of the display area,
The crack prevention hole is disposed surrounding the outside of the display area in an area other than the pad area, does not overlap with the planarization film in the pad area, and extends along short sides of the non-display area that are shorter than the sides of the display area. An electroluminescent display device. According to claim 1,
The crack prevention hole is an electroluminescent display device having a bent portion and a straight portion. According to claim 2,
The non-display area includes a first area having a long side that is larger than the short side and a second area having the short side,
The electroluminescent display device, wherein the bent portion of the crack prevention hole is located at a corner where the first region and the second region meet. According to claim 2,
The crack prevention hole is located in the at least one inorganic insulating layer located on the buffer layer. delete According to claim 1,
The electroluminescent display device further includes a flexible printed circuit board connected to the pad area of the non-display area. According to claim 6,
An electroluminescent display device wherein the flexible printed circuit board overlaps the crack prevention hole. According to claim 1,
The display area and the non-display area formed on the substrate include a buffer layer, a gate insulating film, an interlayer insulating film, the planarization film, and a lower passivation film,
The crack prevention hole is a hole from which the interlayer insulating film of the at least one inorganic insulating layer is removed in the non-display area,
The lower passivation film is located on the crack prevention hole. According to claim 1,
Provided with a plurality of buffer layers located between the polyimide layer and a plurality of thin film transistors,
The crack prevention hole is located on the plurality of buffer layers. According to claim 1,
The crack prevention hole has at least one line hole pattern, and the line hole pattern overlaps when there is more than one line hole pattern. According to claim 1,
The crack prevention hole has at least one line hole pattern, and the line hole pattern does not overlap when there is more than one line hole pattern. According to claim 1,
The crack prevention hole has an end that intersects with a scribe line between short sides of the non-display area facing each other with the pad area in between. According to claim 1,
The crack prevention hole includes a first hole pattern having a bent portion surrounding a trimming line located at the periphery of the pad area within the non-display area, and a first hole pattern extending from the first hole pattern to display the display within the non-display area. An electroluminescent display device having a second hole pattern having a straight portion surrounding an area. According to claim 1,
The display area and the non-display area are,
Board;
a buffer layer located on the substrate;
A plurality of thin film transistors located on the buffer layer;
A gate insulating film and an interlayer insulating film provided with the plurality of thin film transistors;
A passivation film located on the plurality of thin film transistors;
The planarization film positioned on the passivation film;
a first electrode located in each pixel area on the planarization film and connected to one of the plurality of thin film transistors through a contact hole formed through the passivation film and the planarization film;
a pixel defining layer formed on the planarization layer to surround each pixel area and overlapping a predetermined portion of the first electrode;
a light emitting layer formed in each pixel area on the first electrode; and
An electroluminescence display device comprising a second electrode formed on the pixel defining layer and the light emitting layer. According to claim 14,
The display area and the non-display area are,
a lower passivation film formed on the second electrode;
an organic insulating film formed on the lower passivation film of the display area;
an upper passivation film formed on the lower passivation film including the organic insulating film;
a barrier layer formed to face the substrate on which the upper passivation film is formed; and
An electroluminescent display device further comprising a polarizing plate adhered to the barrier layer. According to claim 15,
The lower passivation layer is in contact with the upper passivation layer outside the organic insulating layer. According to claim 14,
The substrate is an electroluminescent display device formed of a plastic material. According to claim 15,
The crack prevention hole is located in at least one of the gate insulating layer, the interlayer insulating layer, and the passivation layer. According to claim 18,
An electroluminescent display device in which an insulating film below the crack prevention hole is in contact with another insulating film above the crack prevention hole and fills the crack prevention hole. According to claim 15,
Any one of the buffer layer, the gate insulating film, and the interlayer insulating film below the crack prevention hole is in contact with any one of the passivation film and the lower passivation film above the crack prevention hole through the crack prevention hole. Display device.