KR20210025567A - Electroluminescent display device - Google Patents

Abstract

The present invention relates to an electroluminescent display device which comprises at least one crack prevention hole formed in at least one insulating film among the plurality of insulating films positioned in a non-display area, and a lower insulating film located under the at least one crack prevention hole and an upper insulating film located over the at least one crack prevention hole are in connect with each other through the at least one crack prevention hole. Therefore, damage to the electroluminescent display device can be minimized.

Description

ELECTROLUMINESCENT DISPLAY DEVICE

The present invention relates to an electroluminescent display device, and more specifically, a pad area located outside a display area where a large number of cracks occur during manufacturing of the display device or a non-display area including the pad area. The present invention relates to an electroluminescent display device capable of minimizing the occurrence of cracks by forming a line hole to provide a stepped portion.

An organic light-emitting device, one of flat panel displays (FPD), has high luminance and low operating voltage characteristics. In addition, since it is a self-illuminating type that emits light by itself, the contrast ratio is large, it is possible to implement an ultra-thin display, and the response time is a few microseconds (μs). Also, it is stable, and it is driven with a low voltage of 5 to 15 V DC, so it is easy to manufacture and design a driving circuit.

In addition, since deposition and encapsulation equipment is all the manufacturing process of the organic electroluminescent device, the manufacturing process is very simple.

Organic light emitting devices having such characteristics are largely divided into passive matrix type and matrix type. In the passive matrix method, the device is configured in a matrix form while the scan line and the signal line cross each other. Since scanning lines are sequentially driven according to time to drive, instantaneous luminance equal to the average luminance multiplied by the number of lines must be produced in order to display the required average luminance.

However, in the active matrix method, a thin film transistor (TFT), which is a switching element that turns on/off the pixel region, is positioned for each pixel region, is connected to the switching thin film transistor, and the driving thin film transistor is It is connected to the power wiring and the organic light emitting diode, and is formed for each pixel area.

At this time, the first electrode connected to the driving thin film transistor is turned on/off for each pixel region, and the second electrode opposite to the first electrode serves as a common electrode, thereby interposed between these two electrodes. Together with the formed organic light emitting layer, the organic light emitting diode is formed.

In the active matrix method having such a characteristic, the voltage applied to the pixel region is charged in the storage capacitor Cst, and the power is applied until the next frame signal is applied. It runs continuously for the duration of the screen.

Accordingly, since the same luminance is displayed even when a low current is applied, an active matrix type organic light emitting device is mainly used in recent years because it has advantages of low power consumption, high definition, and large size.

From this point of view, an organic light emitting device according to the prior art will be described with reference to FIGS. 1 and 2 as follows.

1 is a plan view schematically showing an organic light emitting device according to the prior art.

FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1 and is a schematic cross-sectional view of an organic electroluminescent device according to the prior art.

Referring to FIG. 1, in an organic light emitting device 10 according to the prior art, a display area AA is defined on a substrate (not shown), and a non-display area having a pad area outside the display area AA ( (Not shown) is defined, and a plurality of pixel areas (not shown) defined as areas captured by a gate line (not shown) and a data line (not shown) are provided in the display area AA. Power wiring (not shown) is provided parallel to the data wiring (not shown).

Here, a switching thin film transistor (not shown, STr) and a driving thin film transistor (not shown, DTr) are formed in each of the plurality of pixel regions (not shown), and are connected to the driving thin film transistor DTr.

In the organic light emitting device 10 according to the prior art, a substrate (not shown; see 11 in FIG. 2) on which the driving thin film transistor DTr and the organic light emitting device E are formed is provided with a protective film (not shown; 47 in FIG. 2 ). Reference) is encapsulated.

When describing the organic light emitting device according to the prior art in detail, as shown in FIG. 2, a display area AA is defined on the substrate 11, and a pad area PD outside the display area AA. A non-display area (not shown) including a is defined, and a plurality of pixel areas (not shown) are defined as an area captured by a gate line (not shown) and a data line (not shown) in the display area AA. And a power line (not shown) in parallel with the data line (not shown).

Here, a polyimide layer 15 is formed on the glass substrate 11, and a sacrificial layer 13 is formed between the polyimide layer 15 and the substrate 11.

A buffer layer (not shown) made of an insulating material such as silicon oxide (SiO2) or silicon nitride (SiNx), which is an inorganic insulating material, is formed on the polyimide layer 15.

In addition, each pixel area in the display area AA above the buffer layer (not shown) is made of pure polysilicon, respectively, corresponding to the driving area (not shown) and the switching area (not shown), and the central portion thereof is formed of a channel. An active layer 19 including a source region 19b and a drain region 19c doped with a high concentration of impurities is formed on both sides of the channel region 19a and the channel region 19a.

A gate insulating layer 21 is formed on a buffer layer (not shown) including the active layer 19, and each of the active layers in the driving region (not shown) and the switching region (not shown) above the gate insulating layer 21 A gate electrode 23 is formed corresponding to the channel region 19a of (19).

Further, the gate insulating layer 21 is connected to the gate electrode 23 formed in the switching region (not shown), extends in one direction, and a gate wiring (not shown) is formed.

Meanwhile, an interlayer insulating layer 25 is formed on the entire surface of the display area above the gate electrode 23 and the gate wiring (not shown). In this case, contact holes exposing each of the source region 19b and the drain region 19c located on both sides of the channel region 19a of each active layer in the interlayer insulating layer 25 and the gate insulating layer 21 below the interlayer insulating layer 25 (Not shown) is provided.

In addition, on the upper part of the interlayer insulating layer 25 including the contact hole (not shown), it intersects with a gate wiring (not shown), defines the pixel region, and a data line (not shown) made of a metal material, and is spaced apart therefrom. Thus, power wiring (not shown) is formed. In this case, the power wiring (not shown) may be formed in parallel with and spaced apart from the gate wiring (not shown) on a layer on which the gate wiring (not shown) is formed, that is, a gate insulating layer.

In addition, the source region 19b and the drain region 19c are spaced apart from each other in the driving region (not shown) and the switching region (not shown) above the interlayer insulating layer 25 and exposed through the contact hole (not shown). A source electrode 27a and a drain electrode 27b made of the same metal material as the data line (not shown) are formed in contact with each other. At this time, the active layer 19, the gate insulating layer 21, the gate electrode 23 and the interlayer insulating layer 25 are sequentially stacked in the driving region (not shown) and the source electrode 27a and the drain formed to be spaced apart from each other. The electrode 27b forms a driving thin film transistor (not shown).

Meanwhile, a first passivation film 31 having a drain contact hole (not shown) exposing the drain electrode 27b of the driving thin film transistor (not shown) above the driving thin film transistor (not shown) and the switching thin film transistor (not shown), and A planarization film 33 is formed.

In addition, a first electrode that is in contact with the drain electrode 27b of the driving thin film transistor (not shown) and the drain contact hole (not shown) on the planarization layer 33 and has a separate shape for each pixel region. (35) is formed.

In addition, a pixel defining layer 37 for separating each pixel region is formed on the first electrode 35. In this case, the pixel defining layer 37 is disposed between adjacent pixel regions.

On the first electrode 35 in each pixel area surrounded by the pixel defining layer 37, an organic emission layer 39 including an emission layer (not shown) emitting red, green, and blue light is formed.

In addition, a second electrode 41 is formed on the organic emission layer 39 and the pixel defining layer 37 on the entire surface of the display area AA. At this time, the first electrode 35 and the second electrode 41 and the organic light emitting layer 39 interposed between the two electrodes 35 and 41 constitute the organic light emitting device E.

An organic layer 43 is formed on the entire surface of the substrate including the second electrode 41, and a second passivation layer 45 is formed thereon.

In addition, the second passivation layer 45 is positioned opposite to a barrier film 47 for preventing encapsulation of the organic light emitting device E and upper moisture permeation, and the substrate 11 ) And the protective film 47, a pressure sensitive adhesive (hereinafter referred to as PSA) (not shown) is completely in close contact with and interposed with the substrate 11 and the protective film 47 without an air layer, and the protective film ( 47) A polarizing plate 53 is disposed on the upper part. At this time, the passivation film 39, the adhesive 41, and the protective film 47 form a face seal structure.

In this way, the substrate 11 and the barrier film 47 are fixed by an adhesive (not shown) to form a panel state, thereby configuring the organic electroluminescent device 10 according to the prior art.

In order to make the organic electroluminescent device 10 having the above-described configuration into a plastic organic electroluminescent device, first, the back surface of the substrate 11 of the organic electroluminescent device 10 is cleaned, and then the substrate 11 is irradiated with a laser. The sacrificial layer 13 interposed between the polyimide layer 15 and the polyimide layer 15 is separated by heat, so that the substrate 11 is peeled off from the organic electroluminescent device 10.

Then, a back plate (not shown) is laminated on the surface of the polyimide layer 15 of the separated organic light emitting device 10 to form a plastic organic light emitting device.

However, in order to manufacture a plastic organic electroluminescent device according to the prior art, when the substrate 10 is peeled from the organic electroluminescent device 10, a protective film constituting the organic electroluminescent device 10 is performed. (47) The organic light emitting device 10 is bent due to the self-stress of the polarizing plate 53 and the thin film transistor unit.

FIG. 3 is a schematic perspective view of an organic electroluminescent device according to the prior art, and schematically shows that a crack is transmitted from a pad area of the organic electroluminescent device and a curl phenomenon occurs in the organic electroluminescent device.

As shown in FIG. 3, during the process of laminating a back plate (not shown) on the surface of the polyimide layer 15 from which the substrate 11 is removed, it is vulnerable due to repeated bending and unfolding. A crack (C) occurs in the area, for example, the pad area (PD) to which the printed circuit board (FPCB) is connected, and the crack (C) is transferred to the thin film transistor unit inside the device, resulting in a defect in the organic electroluminescent device. Will result. In particular, most of the layers constituting the pad area PD after the substrate is removed is made of an inorganic film, and the polyimide layer 15 has a structure that is very susceptible to cracking due to a high degree of brittle.

Therefore, when the plastic organic light emitting device according to the prior art is manufactured, a crack C is generated in the pad area PD to which the printed circuit board FPCB, which is a weak area, is connected due to repeated bending and unfolding. C) is transferred to the thin film transistor inside the device, resulting in a defect in the organic light emitting device.

In addition, the cracks generated in this way grow through subsequent processes and cause interference to signal lines of the panel, resulting in poor driving and other screen abnormalities.

The present invention is to solve the problems of the prior art, and an object of the present invention is a pad area PD to which a printed circuit board (FPCB), which is a weak area due to repeated bending and unfolding, is connected during manufacture of a display device, or An electroluminescent display that minimizes damage to the electroluminescent display device by forming a line hole pattern on the surface of a plurality of inorganic films located in the non-display area including the pad area to bypass the path of the crack and prevent it from being transferred to the inside of the device. It is to provide an apparatus and a method of manufacturing the same.

An electroluminescent display device according to the present invention for achieving the above object includes a display area including a plurality of pixel areas, and a non-display area located outside the display area and having sides shorter than sides of the display area. And, a crack prevention hole positioned in the non-display area, disposed along the display area, and extending to be adjacent to a short side of the non-display area.

Here, the crack prevention hole may have a bent portion and a straight portion.

The non-display area may include a first area having a longer side than the short side and a second area having the short side, and the bent portion of the crack prevention hole may be a corner portion in which the first area contacts the second area.

A flexible printed circuit board connected to the pad area of the non-display area may further be included.

The flexible printed circuit board may overlap the crack prevention hole.

The display area and the non-display area formed on the substrate include a buffer layer, a gate insulating layer, an interlayer insulating layer, a planarization layer, and a lower passivation layer, and the crack prevention hole is a hole from which the interlayer insulating layer is removed from the non-display area. And the lower lower passivation layer may be located on the crack prevention hole.

The crack prevention hole includes a first hole pattern having a bent portion surrounding a trimming line positioned at the periphery of the pad area, and a straight portion extending from the first hole pattern and surrounding the display area in the non-display area. A second hole pattern may be provided.

Any insulating layer below the crack prevention hole may contact any other insulating layer above the crack prevention hole and fill the crack prevention hole.

The electroluminescent display device and its manufacturing method according to the present invention include a pad area PD to which a printed circuit board (FPCB), which is a weak area due to repetition of bending and unfolding during manufacturing of the display device, is connected, or a ratio including the pad area. By forming line hole patterns on the surface of a plurality of inorganic films located in the display area, i.e., the gate insulating film, interlayer insulating film, or passivation film, the path of the crack is bypassed to prevent the transition to the inside of the device, thereby minimizing damage to the electroluminescent display device. I can.

In particular, by forming a plurality of line hole patterns at the weak point adjacent to the scribe line, when a crack occurs, the panel is a critical point by bypassing the path of line breakage and crack at the weak point. It can prevent wiring cracks.

In addition, in the electroluminescent display device and its manufacturing method according to the present invention, when the display device is manufactured, a chamfering cutting is performed on a trimming line defined at the top and bottom edges of the pad area of the panel. In order to prevent cracks from penetrating into the panel by forming a curved hole pattern surrounding the trimming line at the upper and lower edges of the pad area, a bypass step is provided. By forming the pad area, cracks are prevented from being transferred to the display area from the edges of the upper and lower surfaces of the pad area.

In addition, the electroluminescent display device and its manufacturing method according to the present invention include upper and lower edges of the non-display area located opposite the pad area of the panel in addition to the upper and lower edges of the pad area when the display device is manufactured. Chamfering cutting is also performed on the defined trimming line, and a line hole pattern is formed with the curved hole pattern so as to extend from the curved hole pattern of the pad area in the non-display area to surround the display area. Cracks are displayed from the trimming line of the non-display area by forming a bypass step to prevent cracks from penetrating into the panel from the trimming line of the non-display area formed integrally. It is prevented from being transmitted to the area.

1 is a plan view schematically showing an organic light emitting device according to the prior art.
FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1 and is a schematic cross-sectional view of an organic electroluminescent device according to the prior art.
FIG. 3 is a schematic perspective view of an organic electroluminescent device according to the prior art, and schematically shows that a crack is transmitted from a pad area of the organic electroluminescent device and a curl phenomenon occurs in the organic electroluminescent device.
4 is a plan view schematically illustrating an electroluminescent display device according to the present invention.
5 is a cross-sectional view taken along line V-V of FIG. 4 and is a schematic cross-sectional view of an electroluminescent display device according to the present invention.
6 is a schematic cross-sectional view illustrating an enlarged pad area of an EL display device according to the present invention.
7A to 7S are cross-sectional views illustrating a manufacturing process of an electroluminescent display device according to the present invention.
8 is a schematic perspective view of an electroluminescent display device according to the present invention.
9 is an enlarged plan view schematically illustrating a pad area of an electroluminescent display device according to the present invention, and is a plan view schematically illustrating a state in which a path is bypassed along a plurality of line hole patterns of cracks.
10 is a perspective view schematically illustrating another embodiment of a line hole pattern in a pad area of an EL display device according to the present invention.
11 is a perspective view schematically illustrating another embodiment of a line hole pattern of an electroluminescent display device according to the present invention.

Hereinafter, an electroluminescent display device according to an exemplary embodiment of the present invention will be described in detail.

The configuration of the present invention and its effect will be clearly understood through the detailed description below. Note that prior to the detailed description of the present invention, the same components are denoted by the same reference numerals as possible even if they are displayed on different drawings, and a detailed description will be omitted when it is determined that the gist of the present invention may be obscure for known configurations. do.

The electroluminescent display device according to the present invention is divided into a top emission type and a bottom emission type according to the transmission direction of the emitted light. Hereinafter, in the present invention, the bottom emission type will be described as an example. would.

An electroluminescent display device according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings.

4 is a plan view schematically illustrating an electroluminescent display device according to the present invention.

5 is a cross-sectional view taken along line V-V of FIG. 4 and is a schematic cross-sectional view of an electroluminescent display device according to the present invention.

6 is a schematic cross-sectional view illustrating an enlarged pad area of an EL display device according to the present invention.

Referring to FIG. 4, in the electroluminescent display device according to the present invention, a substrate 101 on which a driving thin film transistor (not shown, DTr) and an organic electroluminescent device E is formed is encapsulated by a protective film 151. (encapsulation).

When describing the electroluminescent display device according to the present invention in detail, as shown in FIGS. 4 and 5, a display area AA is defined on a substrate 101 made of a glass material, and outside the display area AA. A non-display area NA including a pad area PD is defined, and a plurality of pixels defined as an area captured by a gate line (not shown) and a data line (not shown) in the display area AA An area (not shown) is provided, and a power line (not shown) is provided in parallel with the data line (not shown).

Here, the glass substrate 101 is peeled off after manufacturing the organic light emitting device, and a plastic back plate (not shown, see 161 in FIG. 7S) is laminated on the peeled portion. Reference numeral 161 is made of a flexible glass substrate or plastic material having a flexible characteristic so that display performance can be maintained as it is even if the electroluminescent display device is bent like paper.

In addition, a polyimide layer 105, which is an organic material, is formed on the substrate 101, and an inorganic insulating material such as silicon oxide (SiO2) or silicon nitride, which is an inorganic insulating material, is formed on the polyimide layer 105. A buffer layer 107 having a multi-layer structure made of (SiNx) is formed. At this time, the reason for forming the buffer layer 107 under the active layer 109 formed in a subsequent process is that the active layer ( This is to prevent the deterioration of the characteristics of 109).

A sacrificial layer 103 made of amorphous silicon or silicon nitride (SiNx) is formed between the substrate 101 and the polyimide layer 105, and the sacrificial layer 103 is formed by laser It plays a role of making it easier to peel the substrate 101 from the polyimide layer 105 through an irradiation process.

In addition, each pixel area (not shown) in the display area AA above the buffer layer 107 is made of pure polysilicon corresponding to a driving area (not shown) and a switching area (not shown), and the central portion thereof An active layer 109 comprising a channel region 109a constituting a channel and a source region 109b and a drain region 109c doped with a high concentration of impurities are formed on both sides of the channel region 109a.

A gate insulating layer 113 is formed on the buffer layer 107 including the active layer 109, and the respective active layers (not shown) in the driving region (not shown) and the switching region (not shown) are above the gate insulating layer 113. A gate electrode 115a is formed corresponding to the channel region 109a of 109. At this time, at least one line hole pattern (not shown) is formed on the gate insulating layer 113 located in the pad area PD in the direction of the long side of the pad area, that is, facing the display area AA. I can.

Further, the gate insulating layer 113 is connected to the gate electrode 115a formed in the switching region (not shown), extends in one direction, and a gate wiring (not shown) is formed. At this time, the gate electrode 115a and the gate wiring (not shown) are a first metal material having a low resistance characteristic, for example, aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum ( Mo) or MoTi may have a single layer structure, or may have a double layer or triple layer structure by being made of two or more of the first metal materials. In the drawing, the gate electrode 115a and the gate wiring (not shown) have a single layer structure as an example.

Meanwhile, an interlayer insulating layer 121 made of an insulating material, for example, silicon oxide (SiO2) or silicon nitride (SiNx), which is an inorganic insulating material, on the entire surface of the display area of the substrate including the gate electrode 115a and the gate wiring (not shown). ) Is formed. In this case, each of the source region 109b and the drain region 109c located on both sides of the channel region 109a of the active layer 109 is exposed to the interlayer insulating layer 121 and the gate insulating layer 113 below the interlayer insulating layer 121. An active layer contact hole (not shown) is provided.

In addition, at least one or more first line hole patterns 125c are formed in the interlayer insulating layer 121 positioned in the pad region PD. In this case, the first line hole pattern 125c is formed in the long side direction of the pad area PD, that is, to face the display area AA.

In addition, an upper portion of the interlayer insulating layer 121 including the active layer contact hole (not shown) crosses the gate wiring (not shown), defines the pixel region (not shown), and a second metal material, for example, Data wiring made of any one or two or more of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), molitanium (MoTi), chromium (Cr), titanium (Ti) (Not shown) and power wiring (not shown) are formed spaced apart from this. In this case, the power wiring (not shown) may be formed in parallel with the gate wiring (not shown) on the layer on which the gate wiring (not shown) is formed, that is, on the gate insulating layer 113.

Further, the source region 109b and the drain region 109c are spaced apart from each other in the driving region (not shown) and the switching region (not shown) on the interlayer insulating layer 121 and exposed through the active layer contact hole (not shown). A source electrode 127a and a drain electrode 127b made of the same second metal material as the data line (not shown) are formed in contact with each other. At this time, the source electrode 127a and the drain formed spaced apart from each other from the active layer 109, the gate insulating layer 113, the gate electrode 115a, and the interlayer insulating layer 121 sequentially stacked in the driving region (not shown). The electrode 127b constitutes a driving thin film transistor (not shown, DTr).

Meanwhile, in the drawings, the data wiring (not shown) and the source electrode 127a and the drain electrode 127b all have a single layer structure, but these components may have a double layer or triple layer structure. have.

In this case, although not shown in the drawing, a switching thin film transistor (not shown) having the same stacked structure as the driving thin film transistor DTr is also formed in the switching region (not shown). In this case, the switching thin film transistor (not shown) is electrically connected to the driving thin film transistor DTr, the gate line (not shown), and the data line (not shown). That is, the gate wiring (not shown) and the data wiring (not shown) are respectively connected to a gate electrode (not shown) and a source electrode (not shown) of the switching thin film transistor (not shown), and the switching thin film transistor ( A drain electrode (not shown) of (not shown) is electrically connected to the gate electrode 115a of the driving thin film transistor.

Meanwhile, in the electroluminescent display according to the present invention, a driving thin film transistor DTr and a switching thin film transistor (not shown) have an active layer 109 of polysilicon, and are configured as a top gate type as an example. However, the driving switching thin film transistor (not shown) and the switching thin film transistor (not shown) may also be configured as a bottom gate type having an active layer of amorphous silicon.

When the driving thin film transistor (not shown, DTr) and the switching thin film transistor (not shown; STr) are configured as a bottom gate type, the stacked structure is separated from each other from the active layer of the gate electrode / gate insulating film / pure amorphous silicon, and impurities It consists of an active layer made of an ohmic contact layer of amorphous silicon/a source electrode and a drain electrode spaced apart from each other. In this case, the gate wiring is formed to be connected to the gate electrode of the switching thin film transistor on the layer on which the gate electrode is formed, and the data wiring is formed to be connected to the source electrode on the layer on which the source electrode of the switching thin film transistor is formed.

Meanwhile, a passivation layer 131 having a drain contact hole (not shown) exposing the drain electrode 127b of the driving thin film transistor DTr over the driving thin film transistor DTr and the switching thin film transistor (not shown), and The planarization film 133 is laminated. In this case, an insulating material, for example, an inorganic insulating material such as silicon oxide (SiO2) or silicon nitride (SiNx) is used as the interlayer insulating layer 121. In addition, the planarization layer 133 is used by selecting from a group of organic materials including photo acryl.

Meanwhile, at least one second line hole pattern 135b is formed in a portion of the passivation layer 131 located in the pad region PD. In this case, the second line hole pattern 135b is formed in the long side direction of the pad area PD, that is, to face the display area AA. In this case, the at least one second line hole pattern 135b may be formed to overlap or not overlap with the first line hole pattern 125c under the second line hole pattern 135b.

In addition, the first electrode (not shown) is in contact with the drain electrode 127b of the driving thin film transistor DTr on the planarization layer 133 through the drain contact hole (not shown), and has a separate shape for each pixel area. 137) is formed. At this time, the first electrode 137 may be provided as a transparent electrode and a reflective electrode. When used as a transparent electrode, it may be provided with ITO, IZO, ZnO, or In2O3, and when used as a reflective electrode, Ag, After forming a reflective film from Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and compounds thereof, ITO, IZO, ZnO, or In2O3 may be formed thereon.

In addition, a pixel definition made of an insulating material, for example, bensocyclobutene (BCB), polyimide, or photoacryl, is located above the first electrode 137 in the boundary region of each pixel region. A film 139 is formed. In this case, the pixel defining layer 139 is formed to surround each pixel area (not shown) and overlap the edge of the first electrode 137, and the display area AA as a whole has a plurality of openings. It is in the form of a grid.

An organic emission layer 141 made of an organic material emitting red, green, and blue light is formed on the first electrode 137 in each pixel area surrounded by the pixel defining layer 139. The organic light-emitting layer 141 may be composed of a single layer made of an organic light-emitting material, or although not shown in the drawing, in order to increase luminous efficiency, a hole injection layer, a hole transporting layer, and a light-emitting layer material layer), an electron transporting layer, and an electron injection layer.

In addition, a second electrode 143 is formed on the entire surface of the display area AA including the organic emission layer 141 and the pixel defining layer 139. In this case, the first electrode 137 and the second electrode 143 and the organic emission layer 141 interposed between the two electrodes 137 and 141 constitute the organic electroluminescent device E.

Accordingly, when a predetermined voltage is applied to the first electrode 137 and the second electrode 143 according to the selected color signal, the organic light emitting device E Electrons provided from the electrode 143 are transported to the organic emission layer 141 to form excitons, and when the excitons transition from an excited state to a ground state, light is generated and emitted in the form of visible light. At this time, since the emitted light passes through the transparent second electrode 143 and goes out to the outside, the plastic organic light emitting device implements an arbitrary image.

Meanwhile, a lower passivation layer 145 made of an insulating material, particularly, silicon oxide (SiO2) or silicon nitride (SiNx), which is an inorganic insulating material, is formed on the entire surface of the substrate including the second electrode 143. At this time, since moisture penetration into the organic emission layer 141 cannot be completely suppressed by only the second electrode 143, the organic emission layer ( 141) can be completely inhibited.

In addition, an organic layer 147 made of a polymer organic material such as a polymer is formed in the display area AA on the lower passivation layer 145. At this time, the polymer thin film constituting the organic layer 147 is an olefin-based polymer (polyethylene, polypropylene), polyethylene terephthalate (PET), epoxy resin, fluoro resin, polysiloxane, etc. Can be used.

In addition, an insulating material such as silicon oxide (SiO2) or silicon nitride (SiNx), which is an inorganic insulating material, is provided on the entire surface of the substrate including the organic layer 147 to prevent moisture from penetrating through the organic layer 147. An upper passivation film 149 made of is additionally formed.

On the front surface of the substrate including the upper passivation layer 149, a protective film 151 is positioned opposite to each other for encapsulation of the organic light emitting element (E), and between the substrate 101 and the protective film 151 An adhesive (not shown) made of any one of a transparent and adhesive frit, an organic insulating material, and a polymer material is interposed in complete contact with the substrate 101 and the barrier film 151 without an air layer. In addition, a polarizing plate 153 is disposed on the protective film 151.

In this way, the substrate 101 and the barrier film 151 are fixed by an adhesive (not shown) to form a panel state, thereby configuring the organic electroluminescent device according to the present invention.

In addition, in order to make the electroluminescent display having the above configuration into a plastic electroluminescent display device, first, the back surface of the substrate 101 of the electroluminescent display device is cleaned, and then the substrate 101 and the polyimide layer are irradiated with a laser. The sacrificial layer 103 interposed therebetween 105 is separated by heat so that the substrate 101 is peeled off from the electroluminescent display device.

Thereafter, a plastic electroluminescent display is formed by laminating a back plate (not shown) on the surface of the polyimide layer 105 of the separated electroluminescent display device.

As described above, according to the electroluminescent display device according to the present invention, a plurality of weapons positioned in the pad area PD to which the printed circuit board (FPCB), which is a weak area, is connected due to repeated bending and unfolding during the manufacture of the display device. By forming line hole patterns on the surface of the film, that is, the gate insulating film, the interlayer insulating film, or the passivation film, the path of the crack is bypassed so that the crack is not transferred to the inside of the device, thereby minimizing damage to the electroluminescent display device.

In particular, by forming a plurality of line hole patterns at a weak point adjacent to a scribe line (SL), when a crack occurs, the line breaks at the weak point and the path of the crack is bypassed, thereby leading to a critical point. In-panel wiring cracks can be prevented.

Meanwhile, a method of manufacturing a plastic organic electroluminescent device according to the present invention will be described with reference to FIGS. 7A to 7S as follows.

7A to 7S are cross-sectional views schematically illustrating a method of manufacturing an EL display device according to the present invention.

As shown in FIG. 7A, a substrate 101 made of a glass material is prepared in which a display area AA and a non-display area NA including a pad area PD outside the display area AA are defined. . At this time, the substrate 101 is peeled off after manufacturing the organic electroluminescent device, and a plastic back plate (not shown, see 161 in FIG. 7S) is laminated on the peeled portion, and the back plate 161 is Plastic organic light emitting diodes (OLEDs) are made of a flexible glass substrate or plastic material that has flexible properties so that display performance can be maintained as it is even if it is bent like paper.

Then, a polyimide layer 105, which is an organic material, is formed on the substrate 101, and an inorganic insulating material, for example, silicon oxide (SiO2), which is an inorganic insulating material, is formed on the polyimide layer 105. Alternatively, a buffer layer 107 having a multi-layer structure made of silicon nitride (SiNx) is formed. At this time, the reason for forming the buffer layer 107 under the active layer 109 formed in a subsequent process is that the active layer ( This is to prevent the deterioration of the characteristics of 109).

A sacrificial layer 103 made of amorphous silicon or silicon nitride (SiNx) is formed between the substrate 101 and the polyimide layer 105, and the sacrificial layer 103 is a laser It plays a role of making it easier to peel the substrate 101 from the polyimide layer 105 through an irradiation process.

Each pixel area in the upper display area AA is made of pure polysilicon corresponding to the driving area (not shown) and the switching area (not shown), and the central portion thereof is a channel area 109a constituting a channel, and the An active layer 109 composed of a source region 109b and a drain region 109c doped with a high concentration of impurities is formed on both sides of the channel region 109a.

Then, as shown in FIG. 7B, an active layer 109 is formed on the buffer layer 107. In this case, the active layer 109 is made of pure polysilicon, corresponding to the driving area (not shown) and the switching area (not shown) in each pixel area in the display area AA.

Subsequently, as shown in FIG. 7C, a first photosensitive film (not shown) is applied on the buffer layer (not shown), and the first photosensitive film (not shown) is selectively patterned through an exposure process and a development process. 1 A photoresist pattern 111 is formed.

Then, as shown in FIG. 7D, the active layer 109 is selectively removed using the first photoresist pattern 111 as an etching mask.

Subsequently, as shown in FIG. 7E, the first photoresist pattern 111 is removed, and a gate insulating layer 113 and a first metal material layer 115 are formed on the buffer layer 107 including the active layer 109. Are deposited in sequence. In this case, the first metal material layer 115 is a first metal material having a low resistance characteristic, for example, aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), and molybdenum. It may be made of any one of titanium (MoTi) to have a single layer structure, or may have a double layer or triple layer structure by being made of two or more of the first metal materials. In the drawings, the gate electrode and the gate wiring (not shown) have a single layer structure as an example.

Then, after applying a second photoresist layer (not shown) on the first metal material layer 115, the second photoresist layer (not shown) is selectively patterned through exposure and development processes to form a second photoresist layer pattern ( 117).

Subsequently, as shown in FIG. 7F, the first metal material layer 115 is selectively etched using the second photoresist pattern 117 as an etching mask to form a gate electrode 115a. In this case, a gate wiring (not shown) is formed on the gate insulating layer 113 and connected to the gate electrode 115a formed in the switching region (not shown) and extending in one direction.

Then, the second photoresist pattern 117 is removed, and impurities are implanted into the active layer 109 under both sides of the gate electrode 115a to form a channel region 109a in the center of the active layer 109 And, a source region 109b and a drain region 109c spaced apart from the channel region 109a are formed.

Subsequently, as shown in FIG. 7G, an insulating material, for example, silicon oxide (SiO2) or silicon nitride (SiNx), which is an inorganic insulating material, is used on the entire display area over the gate electrode 115a and the gate wiring (not shown). The formed interlayer insulating film 121 is formed.

Thereafter, a third photoresist layer (not shown) is coated on the interlayer insulating layer 121 and then selectively patterned through exposure and development processes to form a third photoresist layer pattern 123.

Subsequently, as shown in FIG. 7H, the interlayer insulating layer 121 and the gate insulating layer 125 below the interlayer insulating layer 121 and the gate insulating layer 125 are selectively etched using the third photoresist layer pattern 123 as an etching mask to form a source region of the active layer 109. A source region contact hole 125a and a drain region contact hole 125b exposing the 109b and the drain region 109c are simultaneously formed. At this time, when forming the source region contact hole 125a and the drain region contact hole 125b, at least one line hole pattern 125c is also formed in a portion of the interlayer insulating layer 121 located in the pad region PD. ) Is also formed. Here, the first line hole pattern 125c is formed in the long side direction of the pad area PD, that is, to face the display area AA.

Then, as shown in FIG. 7I, the third photoresist pattern 123 is removed, and intersecting the gate wiring (not shown) on the interlayer insulating layer 121 including the first line hole pattern 125c, , Defining the pixel region (not shown) and forming a second metal material layer 127. In this case, the second metal material layer 127 is formed of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), molitanium (MoTi), chromium (Cr), titanium (Ti ) Of any one or two or more materials.

Subsequently, a fourth photoresist layer (not shown) is applied on the second metal material layer 127 and then patterned through exposure and development processes to form a fourth photoresist layer pattern 129.

Then, as shown in FIG. 7J, the second metal material layer 127 is selectively etched using the fourth photoresist pattern 129 as an etching mask to cross the gate line (not shown), and the pixel A data line (not shown) defining the region P and a power line (not shown) spaced apart from the data line are formed. In this case, the power wiring (not shown) may be formed in parallel with and spaced apart from the gate wiring (not shown) on a layer on which the gate wiring (not shown) is formed, that is, a gate insulating layer.

In addition, when the data line (not shown) is formed, the driving region (not shown) and the switching region (not shown) are spaced apart from each other over the interlayer insulating layer 121, and the source region contact hole 125a and the drain A source electrode 127a made of the same second metal material as the data line (not shown) and in contact with the source region 109b and the drain region 109c of the active layer 109 through a region contact hole 125b, and The drain electrode 127b is formed at the same time. At this time, the source electrode 127a and the drain formed spaced apart from each other from the active layer 109, the gate insulating layer 113, the gate electrode 115a, and the interlayer insulating layer 121 sequentially stacked in the driving region (not shown). The electrode 127b constitutes a driving thin film transistor (not shown; DTr).

Meanwhile, in the drawings, the data wiring (not shown) and the source electrode 127a and the drain electrode 127b all have a single layer structure, but these components may have a double layer or triple layer structure. have.

In this case, although not shown in the drawing, a switching thin film transistor (not shown) having the same stacked structure as the driving thin film transistor is also formed in the switching region (not shown). The switching thin film transistor (not shown) is electrically connected to the driving thin film transistor (not shown), the gate line (not shown), and the data line (not shown). That is, the gate wiring (not shown) and the data wiring (not shown) are respectively connected to a gate electrode (not shown) and a source electrode (not shown) of the switching thin film transistor (not shown), and the switching thin film transistor ( A drain electrode (not shown) of (not shown) is electrically connected to the gate electrode 115a of the driving thin film transistor.

Meanwhile, in the organic light emitting device according to the present invention, the driving thin film transistor (not shown) and the switching thin film transistor (not shown) have an active layer 109 of polysilicon, and are configured as a top gate type. Although shown as, the driving switching thin film transistor and the switching thin film transistor (not shown) may be configured as a bottom gate type having an active layer of amorphous silicon.

When the driving thin film transistor (not shown) and the switching thin film transistor (not shown) are configured in a bottom gate type, the stacked structure is spaced apart from the gate electrode/gate insulating film/active layer of pure amorphous silicon, and is an ohmic of impurity amorphous silicon. It consists of an active layer made of a contact layer and a source electrode and a drain electrode spaced apart from each other. In this case, the gate wiring is formed to be connected to the gate electrode of the switching thin film transistor on the layer on which the gate electrode is formed, and the data wiring is formed to be connected to the source electrode on the layer on which the source electrode of the switching thin film transistor is formed.

Subsequently, as shown in FIG. 7K, after the fourth photoresist pattern 129 is removed, a passivation layer 131 is formed on the entire surface of the substrate including the source electrode 127a and the drain electrode 127b. In this case, as the passivation layer 131, an insulating material, for example, an inorganic insulating material such as silicon oxide (SiO2) or silicon nitride (SiNx) is used.

Next, as shown in FIG. 7L, a planarization layer 133 made of an organic material is formed on the passivation layer 131. At this time, the organic material is a hydrophobic organic material having insulating properties and is formed of one selected from the group consisting of polyacryl, polyimide, polyamide (PA), benzocyclobutene (BCB), and phenol resin. Can be.

Subsequently, as shown in FIG. 7M, the planarization layer 133 and the passivation layer 131 below the planarization layer 133 are sequentially etched to form a drain contact hole 135a exposing the drain electrode 127b. At this time, when the drain contact hole 135a is formed, at least one second line hole pattern 135b is also formed in a portion of the passivation layer 131 located in the pad region PD. Here, the second line hole pattern 135b is formed in a long side direction of the pad area PD, that is, opposite to the display area AA, and the first line hole pattern 125c formed on the interlayer insulating layer 121 and It can also be formed so as not to overlap or overlap.

Thereafter, as shown in FIG. 7N, after depositing a conductive material layer (not shown) on the planarization layer 133, the conductive material layer is selectively etched through a mask process to form the drain contact hole 135a. ) To form a first electrode 137 that is in contact with the drain electrode 127b of the thin film transistor DTr and has a separate shape for each pixel area. At this time, the conductive material layer (not shown) may be provided as a transparent electrode and a reflective electrode. When used as a transparent electrode, it may be provided with ITO, IZO, ZnO, or In2O3, and when used as a reflective electrode, Ag , Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and after forming a reflective film from these compounds, ITO, IZO, ZnO, or In2O3 may be formed thereon.

Subsequently, as shown in FIG. 7O, for example, bensocyclobutene (BCB), polyimide, or photo acryl in the boundary region of each pixel region on the first electrode 137 An insulating material layer (not shown) made of is formed.

Then, the insulating material layer (not shown) is selectively patterned to form a pixel defining layer 139. In this case, the pixel defining layer 139 is formed to surround each pixel area and overlap the edge of the first electrode 137, and form a lattice shape having a plurality of openings throughout the display area AA. have.

Subsequently, as shown in FIG. 7P, an organic emission layer 141 emitting red, green, and blue light is formed on the first electrode 137 in each pixel area surrounded by the pixel defining layer 139. At this time, the organic light emitting layer 141 may be composed of a single layer made of an organic light emitting material, or although not shown in the drawing, in order to increase luminous efficiency, a hole injection layer, a hole transporting layer, and light emission It may be composed of multiple layers of a emitting material layer, an electron transporting layer, and an electron injection layer.

Thereafter, as shown in FIG. 7Q, a second electrode 143 is formed on the entire surface of the display area AA including the organic emission layer 141 and the pixel defining layer 139. At this time, the second electrode 143 may be provided as a transparent electrode or a reflective electrode. When used as a transparent electrode, since the second electrode 143 is used as a cathode electrode, a metal having a small work function, that is, Li, Ca , LiF/Ca, LiF/Al, Al, Ag, Mg, and a compound thereof are deposited to face the direction of the organic layer 129, and then a material for forming a transparent electrode such as ITO, IZO, ZnO, or In2O3 thereon It is possible to form an auxiliary electrode layer or a bus electrode line. And, when used as a reflective electrode, it is formed by depositing Li, Ca, LiF/Ca, LiF/Al, Al, Ag, Mg, and a compound thereof over the entire surface.

Accordingly, the organic electroluminescent device E emits red, green, and blue light according to the flow of current to display predetermined image information, and is connected to the drain electrode 127b of the thin film transistor to supply positive power therefrom. The supplying first electrode 137, the second electrode 143 provided to cover all pixels and supplying negative power, and the first electrode 137 and the second electrode 143 are disposed to emit light. It is composed of an organic light emitting layer 141.

The first electrode 137 and the second electrode 143 are insulated from each other by the organic emission layer 141, and light is emitted from the organic emission layer 141 by applying voltages of different polarities to the organic emission layer 141. You lose.

Therefore, when a predetermined voltage is applied to the first electrode 137 and the second electrode 143 according to the selected color signal, the organic light emitting diode E is Electrons provided from the electrode 141 are transported to the organic emission layer 141 to form excitons, and when such excitons transition from an excited state to a ground state, light is generated and emitted in the form of visible light. At this time, since the emitted light passes through the transparent second electrode 143 and goes out to the outside, the plastic organic light emitting device implements an arbitrary image.

Subsequently, as shown in FIG. 7R, on the front surface of the substrate including the second electrode 143, a lower passivation layer 145 made of an insulating material, particularly, silicon oxide (SiO2) or silicon nitride (SiNx), which is an inorganic insulating material. To form. At this time, since moisture penetration into the organic emission layer 141 cannot be completely suppressed by only the second electrode 143, the organic emission layer ( 141) can be completely inhibited.

Then, an organic layer made of a polymer organic material such as a polymer through a coating method such as a screen printing method on the display area AA and the non-display area NA on the lower passivation layer 145 Form 147. At this time, the polymer thin film constituting the organic layer 147 includes olefin-based polymers (polyethylene, polypropylene), polyethylene terephthalate (PET), epoxy resin, fluoro resin, polysiloxane, etc. Can be used. The organic layer 147 is formed on the display area AA.

Subsequently, an insulating material such as silicon oxide (SiO2) or silicon nitride (SiNx), which is an inorganic insulating material, is used to block moisture from penetrating through the organic layer 147 on the entire surface of the substrate including the organic layer 147. An upper passivation layer 149 made of is additionally formed.

Thereafter, a protective film 151 is placed on the entire surface of the substrate including the upper passivation layer 149 to face the protective film 151 for encapsulation of the organic light-emitting device E. The substrate 101 and the protective film 151 ), the substrate 101 and the protective film 151 are completely in close contact without an air layer by interposing an adhesive (not shown) made of any one of a frit, an organic insulating material, and a polymer material, which is transparent and has adhesive properties. After that, a polarizing plate 153 is attached to the top of the protective film 151.

In this way, the substrate 101 and the barrier film 151 are fixed by an adhesive (not shown) to form a panel state, thereby completing the manufacturing process of the organic electroluminescent device according to the present invention.

Thereafter, as shown in FIG. 7S, in order to make the organic electroluminescent device of the above configuration into a plastic organic electroluminescent device, the back surface of the substrate 101 of the organic electroluminescent device is cleaned, and then the laser irradiation The sacrificial layer 103 interposed between the substrate 101 and the polyimide layer 105 is separated by heat to separate the substrate 101 from the organic light emitting device.

Thereafter, a back plate 161 is laminated on the surface of the polyimide layer 105 of the separated organic light emitting device, thereby completing the manufacturing process of the plastic electroluminescent display device according to the present invention.

8 is a schematic perspective view of an electroluminescent display device according to the present invention.

9 is an enlarged plan view schematically illustrating a pad area of an electroluminescent display device according to the present invention, and is a plan view schematically illustrating a state in which a path is bypassed along a plurality of line hole patterns of cracks.

As shown in FIG. 8, a plurality of inorganic films positioned in the pad area PD to which the printed circuit board 170, which is a weak area due to repetition of bending and unfolding during manufacture of the electroluminescent display device, is connected, for example For example, line hole patterns 125c and 135b are formed on the surface of the interlayer insulating layer 121 or the passivation layer 131.

As shown in FIG. 9, an interlayer insulating layer 121 positioned in a pad area PD to which a printed circuit board 170, which is a weak area due to repetition of bending and unfolding in manufacturing an electroluminescent display device, is connected, or By forming line hole patterns 125c and 135b adjacent to the scribe line SL on the surface of the passivation layer 131, cracks generated due to absorption and destruction at weak points during external impact are prevented. The transition path is bypassed, thereby minimizing the transition of cracks into the display area.

Meanwhile, another embodiment of the line hole pattern provided in the pad area of the electroluminescent display device according to the present invention will be schematically described below with reference to FIG. 10.

10 is a perspective view schematically illustrating another embodiment of a line hole pattern in a pad area of an EL display device according to the present invention.

In the electroluminescent display device according to the present invention, a separate member, for example, a camera or other members may be disposed in the electroluminescent display device as needed depending on the application field. In this case, such a member may be provided in the display area AA. Since they cannot be arranged, the pad area PD is used. At this time, since these cameras or other constituent elements must be arranged in a partial area of the pad area PD, a case in which the area of the pad area PD must be reduced accordingly to design the pad area PD occurs.

In this case, since the area of the pad area PD of the electroluminescent display device according to the present invention is reduced, the shape of the line hole pattern formed in the pad area PD must also be changed.

In this case, the first and second line hole patterns 225 and 235 according to another exemplary embodiment of the present invention include the gate insulating layer 113, the interlayer insulating layer 121, and the passivation layer according to the first exemplary embodiment shown in FIG. 5. The same case as the case formed in 131) will be described as an example.

That is, the first line hole pattern 225 is formed on an interlayer insulating layer (not shown, 121), and the second line hole pattern 235 is formed on a passivation layer (not shown, see 131 of FIG. 5). It will be described by taking the case where it becomes.

Referring to FIG. 10, in the electroluminescent display device 200 according to the present invention, a display area AA is defined on a substrate (not shown), and includes a pad area PD outside the display area AA. The non-display area NA is defined.

Separate spaces 240 in which cameras or other members may be disposed are provided at both edge portions of the non-display area NA adjacent to the pad area PD. At this time, the pad region PD has a smaller area than in the case of the first embodiment of the present invention, and thus is formed on an interlayer insulating film (not shown) or a passivation film (not shown) located in the pad region PD. The shapes of the first and second line hole patterns 225 and 235 are also changed.

Here, each of the first and second line hole patterns 225 and 235 has a central region composed of straight portions 225a and 235a and bent portions 225b and 235b, and the straight portions 225a and 225a are the first and second line hole patterns 225a and 235a. It corresponds to the central region of the first and second line hole patterns 225 and 235, and the bent portions 225b and 235b correspond to both side end regions of the first and second line hole patterns 225 and 235.

Therefore, in the present invention, considering that the area of the pad area PD is reduced if necessary, plastic organic electroluminescence is made by forming bent portions 225b in both end areas of the first and second line hole patterns 225 and 235. Damage to the electroluminescent display device can be minimized by bypassing the path of cracks caused by impacts or the like caused by repetition of bending and unfolding during device manufacturing so that they are not transferred to the inside of the device.

As described above, according to the electroluminescent display device and the manufacturing method according to the present invention, a plurality of pad areas PD to which the printed circuit board (FPCB), which is a weak area due to repetition of bending and unfolding, are connected during manufacturing of the display device. By forming a line hole pattern on the surface of the inorganic film of, that is, the gate insulating film, the interlayer insulating film, or the passivation film, the path of the crack is bypassed so that it is not transferred to the inside of the device, thereby minimizing damage to the electroluminescent display device.

In particular, by forming a line hole pattern at a weak point adjacent to a scribe line (SL), when a crack occurs, a panel that is a critical point by bypassing the path of line breakage and crack at the weak point It can prevent wiring cracks.

On the other hand, another embodiment of the line hole pattern provided in the pad area of the electroluminescent display device according to the present invention will be schematically described below with reference to FIG. 11.

11 is a perspective view schematically illustrating another embodiment of a line hole pattern in a pad area of an EL display device according to the present invention.

The crack prevention hole pattern 325 according to another embodiment of the present invention is at least one of the gate insulating film 113, the interlayer insulating film 121, and the passivation film 131 of the first embodiment of the present invention shown in FIG. 5. The same case as the case formed in will be described as an example. Here, a case where the crack prevention hole pattern 325 is formed in an interlayer insulating layer (not shown, 121) will be described as an example.

Referring to FIG. 11, the electroluminescent display device 300 according to the present invention includes a display area AA on a substrate (not shown) and a pad area PD outside the display area AA. (NA) is defined, a scribe line (SL) is formed outside the non-display area NA, and a first trimming line ( A trimming line (CL1) is defined, and a second trimming line (CL2) is defined at upper and lower edges of the non-display area NA located opposite the pad area PD.

At this time, when the flexible electroluminescent display 300 is manufactured, the first trimming line CL1 defined at the top and bottom edges of the pad area PD of the panel and the ratio positioned opposite the pad area PD Chamfering cutting is performed on the second trimming line CL2 defined at the upper and lower edges of the display area NA.

Referring to FIG. 11, a first hole pattern 325a surrounding the first trimming line CL1 is formed on upper and lower edge portions of the pad area PD. The first hole pattern 325a may be formed in a curved shape or a straight line shape.

In this case, the first hole pattern 325a forms a bypass step to prevent the crack from penetrating into the panel from the trimming line.

Accordingly, since the first hole pattern 325a forms a bypass step to prevent the crack from penetrating into the panel from the first trimming line CL1, the pad area PD Cracks are prevented from being transmitted to the display area AA from the first trimming line CL1 at the upper and lower edges of the.

In addition, referring to FIG. 11, in the non-display area NA located outside the display area AA, the display area AA extends from the first hole pattern 325a of the pad area PD. A second hole pattern 325b is formed integrally with the first hole pattern 325a so as to surround the crack prevention hole pattern 325. In this case, the second hole pattern 325b is formed in a linear shape. The second hole pattern 325b forms a bypass step to prevent a crack from penetrating into the panel from the second trimming line CL2 of the non-display area NA.

Accordingly, the second hole pattern 325b forms a bypass step to prevent the crack from penetrating into the panel from the second trimming line CL2 of the non-display area NA, Cracks from the trimming line of the non-display area are prevented from being transmitted to the display area.

As described above, the electroluminescent display device and manufacturing method according to the present invention include a first hole pattern surrounding the first trimming line formed on the upper and lower edges of the pad area, and extending from the first hole pattern to display By forming a crack prevention hole pattern by integrally forming a second hole pattern formed to surround the area, cracks are prevented from being transmitted to the display area from the first trimming line at the top and bottom edges of the pad area. In addition, cracks from the second trimming line in the non-display area are prevented from being transmitted to the display area.

Those skilled in the art to which the present invention pertains will be able to understand that the above-described present invention can be implemented in other specific forms without changing the technical spirit or essential features thereof.

Therefore, it should be understood that the embodiments described above are illustrative in all respects and not limiting. The scope of the present invention is indicated by the claims to be described later rather than the detailed description, and all changes or modified forms derived from the meaning and scope of the claims and their equivalent concepts should be interpreted as being included in the scope of the present invention. do.

101: substrate 103: sacrificial layer
105: polyimide layer 107: buffer layer
109: active layer 113: gate insulating film
115a: gate electrode 121: interlayer insulating film
125c: first line hole pattern 127a: source electrode
127b: drain electrode 131: passivation film
133: planarization layer 135a: drain contact hole
135b: second line hole pattern 137: first electrode
139: pixel defining layer 141: organic emission layer
143: second electrode 145: lower passivation film
147: organic film 149: upper passivation film
151: protective film 153: polarizing plate
161: Back Plate

Claims (20)

A display area including a plurality of pixel areas;
A non-display area located outside the display area and having short sides shorter than sides of the display area; And
An electroluminescent display device including a crack prevention hole positioned in the non-display area, disposed along the display area, and extending to a short side of the non-display area that is shorter than sides of the display zero area. The method of claim 1,
The crack prevention hole is an electroluminescent display device having a bent portion and a straight portion. The method of claim 2,
The non-display area includes a first area having a long side larger than the short side and a second area having the short side,
And the bent portion of the crack prevention hole is a corner portion in which the first region contacts the second region. The method of claim 2,
The crack prevention hole is an electroluminescent display device positioned on a buffer layer. The method of claim 4,
The crack prevention hole is positioned in at least one inorganic insulating layer on the buffer layer. The method of claim 1,
The electroluminescent display device further comprising a flexible printed circuit board connected to the pad area of the non-display area. The method of claim 6,
The electroluminescent display device wherein the flexible printed circuit board is overlapped with the crack prevention hole. The method of claim 1,
The display area and the non-display area formed on the substrate include a buffer layer, a gate insulating layer, an interlayer insulating layer, a planarization layer, and a lower passivation layer,
The crack prevention hole is a hole from which the interlayer insulating layer is removed in the non-display area,
The lower lower passivation layer is positioned on the crack prevention hole. The method of claim 1,
Having a polyimide layer and a plurality of buffer layers positioned between a plurality of thin film transistors,
The crack prevention hole is positioned on the plurality of buffer layers. The method of claim 1,
The crack prevention hole includes at least one line hole pattern, and the line hole pattern overlaps when there are more than one line hole pattern. The method of claim 1,
The crack prevention hole includes at least one line hole pattern, and the line hole pattern does not overlap when there are more than one line hole pattern. The method of claim 1,
The crack prevention hole is positioned in a pad area of the non-display area or in the non-display area including the pad area. The method of claim 1,
The crack prevention hole includes a first hole pattern having a bent portion surrounding a trimming line positioned at the periphery of the pad area, and a straight portion extending from the first hole pattern and surrounding the display area in the non-display area. An electroluminescent display device having a second hole pattern having. The method of claim 1,
The display area and the non-display area,
Board;
A buffer layer on the substrate;
A plurality of thin film transistors on the buffer layer;
A gate insulating film and an interlayer film including the plurality of thin film transistors;
A passivation film positioned on the plurality of thin film transistors;
A planarization layer on the passivation layer;
A first electrode positioned in each pixel area on the planarization layer and connected to one of the plurality of thin film transistors through a contact hole formed through the passivation layer and the planarization layer;
A pixel defining layer formed on the planarization layer to surround each pixel area and overlapping a predetermined portion of the first electrode;
An emission layer formed in each pixel area on the first electrode; And
An electroluminescent display device including the pixel defining layer and a second electrode formed on the emission layer. The method of claim 14,
The display area and the non-display area,
A lower passivation layer formed on the second electrode;
An organic insulating layer formed on the lower passivation layer in the display area;
An upper passivation layer formed on the lower passivation layer including the organic insulating layer;
A barrier layer formed to face the substrate on which the upper passivation layer is formed; And
An electroluminescent display device further comprising a polarizing plate adhered to the barrier layer. The method of claim 15,
The lower passivation layer is in contact with the upper passivation layer from the outside of the organic insulating layer. The method of claim 13,
The substrate is an electroluminescent display device formed of a plastic material. The method of claim 15,
The crack prevention hole is positioned in at least one of the gate insulating layer, the interlayer insulating layer, and the passivation layer. The method of claim 18,
An electroluminescent display device in which an insulating film below the crack preventing hole is in contact with any other insulating film above the crack preventing hole and is filled in the crack preventing hole. The method of claim 15,
Any one of the buffer layer, the gate insulating layer, and the interlayer insulating layer below the crack prevention hole may contact any one of the passivation layer and the lower passivation layer above the crack prevention hole through the crack prevention hole. Light-emitting display.

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