KR20150026709A - Plastic organic electroluminescent device and method for fabricating the same - Google Patents

Abstract

The present invention relates to a plastic organic electroluminescent device and a manufacturing method thereof. The disclosed invention includes a substrate on which a display region including a plurality of pixel regions and a non-display region including a pad region outside the display region are defined, a plurality of thin film transistors which are formed on each pixel region of the substrate, an interlayer dielectric layer and a passivation layer which are formed on the substrate including the thin film transistor, at least one line hole pattern which is formed on the interlayer dielectric layer or the passivation layer located on the non-display region, a planarization layer which is formed on the passivation layer, a first electrode which is formed on each pixel region of the planarization layer and is connected to a drain electrode of the thin film transistor, a pixel defining layer which is formed on the non-display region and around each pixel region of the substrate including the first electrode, an organic light emitting layer which is separately formed at each pixel region on the first electrode, and a second electrode which is formed on the whole side of the display region of the organic light emitting layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a plastic organic electroluminescent device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device (hereinafter, referred to as " OLED "), and more particularly to an organic electroluminescent device having a pad region located outside the display region, The present invention relates to a plastic organic electroluminescent device capable of minimizing the occurrence of cracks by forming line holes in a non-display area including a pad area and forming a stepped section, and a method of manufacturing the same.

An organic electroluminescent device, which is one of flat panel displays (FPDs), has high luminance and low operating voltage characteristics. In addition, since it is a self-emitting type that emits light by itself, it has a large contrast ratio, can realize an ultra-thin display, has a sphere of a moving image with a response time of several microseconds (μs), has no limitation of a viewing angle, And it is driven with a low voltage of 5 to 15 V of direct current, so that it is easy to manufacture and design a driving circuit.

In addition, the fabrication process of the organic electroluminescent device is very simple because it is a deposition process and an encapsulation process.

An organic electroluminescent device having such characteristics is largely divided into a passive matrix type and a matrix type. In the passive matrix type, a scan line and a signal line cross each other to form a matrix type device. In order to drive the scanning lines in order to drive the scanning lines sequentially, it is necessary to obtain the instantaneous luminance as much as the average luminance multiplied by the number of lines in order to obtain the required average luminance.

However, in the active matrix method, a thin film transistor (TFT), which is a switching element for turning on / off a pixel region, is disposed for each pixel region, and a driving thin film transistor A power supply line, and an organic light emitting diode, and is formed for each pixel region.

At this time, the first electrode connected to the driving thin film transistor is turned on / off in units of a pixel region, and the second electrode facing the first electrode serves as a common electrode, Thereby forming the organic electroluminescent diode.

In the active matrix method having such a characteristic, the voltage applied to the pixel region is charged in the storage capacitor Cst, and power is applied until the next frame signal is applied. Thus, Continue to run during the screen.

Accordingly, since the same luminance is exhibited even when a low current is applied, an active matrix type organic electroluminescent device is mainly used since it has advantages of low power consumption, high definition and large size.

From this point of view, the organic electroluminescent device according to the prior art will be described with reference to FIGS. 1 and 2. FIG.

1 is a plan view schematically showing an organic electroluminescent device according to the prior art.

FIG. 2 is a cross-sectional view taken along the line II-II in FIG. 1, and is a schematic cross-sectional view of an organic electroluminescent device according to the prior art.

1, a display area AA is defined in a substrate (not shown), and a non-display area (not shown) having a pad area outside the display area AA A plurality of pixel regions (not shown) are defined in the display region AA and defined as regions captured by a gate line (not shown) and a data line (not shown) Power wiring (not shown) is provided in parallel with the data wiring (not shown).

A switching thin film transistor (not shown) and a driving thin film transistor (not shown) are formed in each of the plurality of pixel regions (not shown), and are connected to the driving thin film transistor DTr.

The organic electroluminescent device 10 according to the related art has a structure in which a substrate (not shown in FIG. 2, not shown) on which the driving thin film transistor DTr and the organic electroluminescent device E are formed is bonded to a protective film ). ≪ / RTI >

2, a display region AA is defined on a substrate 11, and a pad region PD is formed outside the display region AA. In this case, (Not shown) is defined. The display area AA is defined with a plurality of pixel regions (not shown) defined by a gate wiring (not shown) and a data wiring (not shown) And power wiring lines (not shown) are provided in parallel with the data lines (not shown).

A polyimide layer 15 is formed on the glass substrate 11 and a sacrificial layer 13 is formed between the polyimide layer 15 and the substrate 11.

A buffer layer (not shown) made of silicon oxide (SiO ₂ ) or silicon nitride (SiN x), which is an inorganic insulating material, is formed on the polyimide layer 15.

Each pixel region in the display region AA above the buffer layer (not shown) is made of pure polysilicon corresponding to the driving region (not shown) and the switching region (not shown), respectively. An active layer 19 including a source region 19b and a drain region 19c doped with a high concentration of impurities is formed on both sides of the channel region 19a.

A gate insulating film 21 is formed on a buffer layer (not shown) including the active layer 19. Over the gate insulating film 21, A gate electrode 23 is formed corresponding to the channel region 19a of the gate electrode 19.

The gate insulating film 21 is connected to the gate electrode 23 formed in the switching region (not shown) and extends in one direction to form a gate wiring (not shown).

On the other hand, an interlayer insulating film 25 is formed on the entire surface of the display region above the gate electrode 23 and the gate wiring (not shown). The gate insulating layer 21 and the interlayer insulating layer 25 are formed with contact holes for exposing the source region 19b and the drain region 19c on both sides of the channel region 19a of each active layer, (Not shown).

A data line (not shown) formed of a metal material and defining the pixel region intersects a gate wiring (not shown) on the interlayer insulating film 25 including the contact hole (not shown) And power supply wiring (not shown) is formed. At this time, the power supply wiring (not shown) may be formed on the layer on which the gate wiring (not shown) is formed, that is, on the gate insulating film so as to be spaced apart from the gate wiring (not shown).

The source region 19b and the drain region 19c which are spaced apart from each other in the driving region (not shown) and the switching region (not shown) and exposed through the contact hole (not shown) are formed on the interlayer insulating film 25, And a source electrode 27a and a drain electrode 27b made of the same metal material as the data line (not shown) are formed. At this time, the active layer 19, the gate insulating film 21, the gate electrode 23, and the interlayer insulating film 25, which are sequentially stacked in the driving region (not shown) The electrode 27b forms a driving thin film transistor (not shown).

A first passivation film 31 having a drain contact hole (not shown) exposing the drain electrode 27b of the driving thin film transistor is formed on the driving thin film transistor (not shown) and the switching thin film transistor (not shown) A planarizing film 33 is formed.

The planarization layer 33 is formed on the first electrode 32 and the second electrode 32. The planarization layer 33 is in contact with the drain electrode 27b of the driving thin film transistor (not shown) through the drain contact hole (not shown) (35) are formed.

A pixel defining layer 37 is formed on the first electrode 35 to separately form pixel regions. At this time, the pixel defining layer 37 is disposed between adjacent pixel regions.

An organic light emitting layer 39 composed of a light emitting layer (not shown) emitting red, green and blue light is formed on the first electrode 35 in each pixel region surrounded by the pixel defining layer 37.

A second electrode 41 is formed on the entire surface of the display region AA on the organic emission layer 39 and the pixel defining layer 37. At this time, the organic light emitting layer 39 interposed between the first electrode 35 and the second electrode 41 and between the two electrodes 35 and 41 constitutes the organic electroluminescent device E.

An organic layer 43 is formed on the entire surface of the substrate including the second electrode 41, and a second passivation layer 45 is formed thereon.

The second passivation film 45 is opposed to a barrier film 47 for preventing encapsulation and upper moisture permeation of the organic electroluminescent device E. The substrate 11 (PSA) (not shown) is completely interposed between the substrate 11 and the protective film 47 without an air layer between the protective film 47 and the protective film 47, 47) is provided with a polarizing plate (53). At this time, the passivation film 39, the adhesive 41, and the protective film 47 have a face seal structure.

The organic electroluminescent device 10 according to the prior art is constituted by fixing the substrate 11 and the barrier film 47 by a pressure-sensitive adhesive (not shown) to form a panel state.

The back surface of the substrate 11 of the organic electroluminescence device 10 is first cleaned and then the substrate 11 is cleaned by laser irradiation to form the organic electroluminescence device 10 having the above- And the sacrificial layer 13 interposed between the substrate 11 and the polyimide layer 15 are separated by heat so that the substrate 11 is separated from the organic electroluminescence device 10.

Next, a back plate (not shown) is laminated on the surface of the polyimide layer 15 of the separated organic electroluminescence device 10 to form a plastic organic electroluminescence device.

However, when the substrate 10 is peeled off from the organic electroluminescence device 10 in order to manufacture a plastic organic electroluminescence device according to the related art, the protective film constituting the organic electroluminescence device 10 The organic electroluminescent device 10 is bent by the self-stress of the light emitting layer 47, the polarizing plate 53, and the thin film transistor portion.

FIG. 3 is a schematic perspective view of an organic electroluminescent device according to the related art, and schematically shows a phenomenon in which a crack is transferred from a pad region of an organic electroluminescent device to cause a curl phenomenon of the organic electroluminescent device.

As shown in FIG. 3, when the back plate (not shown) is laminated on the surface of the polyimide layer 15 on which the substrate 11 is peeled off, A crack C is generated in the pad area PD to which the printed circuit board FPCB is connected and the crack C is transferred to the thin film transistor part in the device, . In particular, most of the layers constituting the pad region PD after the removal of the substrate are formed of an inorganic film, and the polyimide layer 15 is also fragile due to a large degree of brittleness.

Therefore, cracks C are generated in the pad region PD to which the printed circuit board (FPCB), which is a weak region, is connected due to repetition of warping and spreading at the time of manufacturing the plastic organic electroluminescent device according to the prior art, C) is transferred to the thin film transistor inside the device, resulting in defective organic electroluminescent device.

In addition, the cracks thus generated grow through the subsequent process and cause interference to the signal line of the panel, resulting in poor driving and other defects.

SUMMARY OF THE INVENTION The present invention has been made to solve the problems of the prior art, and it is an object of the present invention to provide a PDP in which a flexible printed circuit board (FPCB) is connected by repetition of warping and spreading in manufacturing a plastic organic electroluminescent device, Or a line hole pattern is formed on the surface of a plurality of inorganic films located in a non-display area including the pad area so as to bypass the crack path and to prevent the transition to the inside of the device, thereby minimizing the damage to the plastic organic electroluminescence device A plastic organic electroluminescent device and a method of manufacturing the same.

According to an aspect of the present invention, there is provided a plastic organic electroluminescent device comprising: a substrate defining a display region including a plurality of pixel regions and a non-display region including a pad region outside the plurality of pixel regions; A polyimide layer and a buffer layer stacked on the substrate; A plurality of thin film transistors formed in the pixel regions on the buffer layer; An interlayer insulating film and a passivation film stacked on a display region and a non-display region of the substrate including the thin film transistor; At least one line hole pattern formed on at least one of the interlayer insulating film and the passivation film located in the non-display area; A planarization film formed on the passivation film; A first electrode formed in each pixel region on the planarization film and connected to a drain electrode of the thin film transistor; A pixel defining layer formed around each pixel region and a non-display region of the substrate including the first electrode; An organic light emitting layer formed separately on the first electrode for each pixel region; A second electrode formed on the entire surface of the display region on the organic light emitting layer; A lower passivation film formed on the entire surface of the substrate including the second electrode; An organic film formed on the lower passivation film on the display region; An upper passivation film formed on the first passivation film including the organic film; A protective film disposed facing the substrate; And a polarizing plate attached on the protective film.

According to an aspect of the present invention, there is provided a method of fabricating a plastic organic electroluminescent device, the method comprising: providing a substrate defining a display region including a plurality of pixel regions and a non-display region including a pad region outside the plurality of pixel regions; Sequentially stacking a polyimide layer and a buffer layer on the substrate; Forming a plurality of thin film transistors in each pixel region on the buffer layer; Forming an interlayer insulating film and a passivation film on the entire surface of the substrate including the thin film transistor; Forming at least one line hole pattern in at least one of the interlayer insulating film and the passivation film in the non-display area; Forming a planarization film on the passivation film; Forming a first electrode connected to a drain electrode of the thin film transistor in each pixel region on the planarization film; Forming a pixel defining layer around each pixel region of the substrate including the first electrode; Forming an organic light emitting layer for each pixel region on the first electrode; Forming a second electrode on the entire surface of the display area including the organic light emitting layer; Forming a lower passivation film on the entire surface of the substrate including the second electrode; Forming an organic film on the lower passivation film on the display area; Forming an upper passivation film on the first passivation film including the organic film; Sequentially forming a protective film and a polarizing plate on the upper passivation film; And peeling the substrate from the polyimide layer; And laminating a back plate on the surface of the polyimide layer.

The plastic organic electroluminescent device and the method of manufacturing the same according to the present invention are applicable to a pad region (PD) to which a printed circuit board (FPCB), which is a weak region, is connected due to repetition of warping and spreading at the time of manufacturing a plastic organic electroluminescent device, Hole patterns are formed on the surface of the gate insulating film, the interlayer insulating film, or the passivation film to prevent the cracks from being transferred to the inside of the device by bypassing the path of the cracks, It is possible to minimize the damage to the user.

Particularly, by forming a plurality of line-hole patterns at a weak point adjacent to a scribe line, it is possible to prevent line breakage and cracks at the weak points at the time of cracking, It is possible to prevent wiring cracking.

The plastic organic electroluminescent device and the method of manufacturing the same according to the present invention can be applied to a trimming line defined in upper and lower edge portions of a pad region of a panel during the manufacture of a flexible organic electroluminescent device, a curved hole pattern surrounding the trimming line is formed on the top and bottom edge portions of the pad region so as to prevent cracks from penetrating into the panel from the trimming line cut. A crack is prevented from being transmitted to the display region from the top and bottom edge portions of the pad region.

The plastic organic electroluminescent device and the method of manufacturing the same according to the present invention are characterized in that the upper surface and the lower edge of the pad region and the upper surface of the non-display region located on the opposite side of the pad region of the panel, A trimming line is formed on a trimming line defined in a bottom edge of the pad area. The trimming line extends from the curved hole pattern of the pad area to the non-display area, A curved hole pattern is formed integrally with the trimming line of the non-display area to form a bypass step for preventing cracks from penetrating into the panel from the trimming line of the cut non-display area, Crack) is prevented from being transmitted to the display area.

1 is a plan view schematically showing an organic electroluminescent device according to the prior art.
FIG. 2 is a cross-sectional view taken along a line II-II in FIG. 1, and is a schematic cross-sectional view of an organic electroluminescent device according to the prior art.
FIG. 3 is a schematic perspective view of an organic electroluminescent device according to the related art, and schematically shows a phenomenon in which a crack is transferred from a pad region of an organic electroluminescent device to cause a curl phenomenon of the organic electroluminescent device.
4 is a plan view schematically showing a plastic organic electroluminescence device according to the present invention.
Fig. 5 is a cross-sectional view taken along the line V-V in Fig. 4, and is a schematic cross-sectional view of a plastic organic electroluminescence device according to the present invention.
6 is a schematic cross-sectional view showing an enlarged view of a pad region of a plastic organic electroluminescence device according to the present invention.
7A to 7 S are cross-sectional views illustrating a manufacturing process of a plastic organic electroluminescence device according to the present invention.
8 is a schematic perspective view of a plastic organic electroluminescent device according to the present invention.
9 is an enlarged plan view schematically showing a pad region of a plastic organic electroluminescence device according to the present invention, and is a plan view schematically showing a state where a crack is bypassed along a plurality of line hole patterns.
10 is a perspective view schematically showing another embodiment of the line hole pattern of the pad region of the plastic organic electroluminescence device according to the present invention.
11 is a perspective view schematically showing another embodiment of the line hole pattern of the plastic organic electroluminescence device according to the present invention.

Hereinafter, a plastic organic electroluminescent device according to a preferred embodiment of the present invention will be described in detail.

The configuration of the present invention and the operation and effect thereof will be clearly understood through the following detailed description. Before describing the present invention in detail, the same components are denoted by the same reference numerals even if they are shown in different drawings. In the case where it is determined that the gist of the present invention may be blurred to a known configuration, do.

The plastic organic electroluminescent device according to the present invention is divided into a top emission type and a bottom emission type according to the transmission direction of emitted light. I will.

A plastic organic electroluminescent device according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

4 is a plan view schematically showing a plastic organic electroluminescence device according to the present invention.

Fig. 5 is a cross-sectional view taken along the line V-V in Fig. 4, and is a schematic cross-sectional view of a plastic organic electroluminescence device according to the present invention.

6 is a schematic cross-sectional view showing an enlarged view of a pad region of a plastic organic electroluminescence device according to the present invention.

4, a plastic organic electroluminescent device according to the present invention includes a substrate 101 on which a driving thin film transistor (not shown, DTr) and an organic electroluminescent device E are formed is encapsulated by a protective film 151, It is encapsulated.

4 and 5, a display area AA is defined on a substrate 101 made of a glass material, and the outside of the display area AA A non-display area NA including a pad area PD is defined and the display area AA is provided with a plurality of gate lines (not shown) defined by gate wirings (not shown) and data wirings (not shown) (Not shown), and power wiring lines (not shown) are provided in parallel with the data lines (not shown).

Here, the glass substrate 101 is peeled off after the fabrication of the organic electroluminescence device, and the back plate (not shown) of the plastic plate (not shown in FIG. 7 S) is laminated on the peeled portion. 161 is made of a flexible glass substrate or a plastic material having flexible characteristics so that the display performance can be maintained even if the plastic organic electroluminescent device OLED is bent like a paper.

A polyimide layer 105 is formed on the substrate 101 and an inorganic insulating material such as silicon oxide (SiO ₂ ) or nitride And a buffer layer 107 having a multi-layer structure made of silicon (SiNx) is formed. The reason why the buffer layer 107 is formed under the active layer 109 formed in the subsequent process is that the active layer 109 is formed by the release of alkali ions from the inside of the substrate 101 during the crystallization of the active layer 109 109) of the semiconductor device.

A sacrificial layer 103 made of amorphous silicon or silicon nitride (SiNx) is formed between the substrate 101 and the polyimide layer 105. The sacrificial layer 103 is formed by a laser And serves to facilitate the peeling of the substrate 101 from the polyimide layer 105 through an irradiation process.

Each pixel region (not shown) in the display region AA above the buffer layer 107 is made of pure polysilicon corresponding to a driving region (not shown) and a switching region (not shown) An active layer 109 composed of a channel region 109a constituting a channel and a source region 109b and a drain region 109c doped with impurities at high concentration on both sides of the channel region 109a is formed.

A gate insulating layer 113 is formed on the buffer layer 107 including the active layer 109. The gate insulating layer 113 is formed on the active layer (not shown) in the driving region A gate electrode 115a is formed in correspondence with the channel region 109a of the gate electrode 115a. At this time, at least one line hole pattern (not shown) is formed in the gate insulating film 113 located in the pad region PD to face the long side of the pad region, that is, the display region AA .

The gate insulating layer 113 is connected to a gate electrode 115a formed in the switching region (not shown) and extends in one direction to form a gate wiring (not shown). The gate electrode 115a and the gate wiring (not shown) may be formed of a first metal material having a low resistance characteristic such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum Mo, and moly titanium (MoTi), and may have a single layer structure, or may be formed of two or more of the first metal materials to have a double layer structure or a triple layer structure. In the drawing, the gate electrode 115a and the gate wiring (not shown) have a single layer structure.

On the other hand, the gate electrode (115a) and the gate wire insulation on the front display area of the substrate, including (not shown) material, such as an interlayer insulating film made of inorganic insulating material is silicon oxide (SiO ₂₎ or silicon nitride (SiNx) ( 121 are formed. At this time, the source region 109b and the drain region 109c located on both side surfaces of the channel region 109a of the active layer 109 are exposed in the interlayer insulating layer 121 and the gate insulating layer 113 under the interlayer insulating layer 121 An active layer contact hole (not shown) is provided.

In addition, at least one first line hole pattern 125c is formed in the interlayer insulating film 121 located in the pad region PD. At this time, the first line hole pattern 125c is formed facing the long side direction of the pad region PD, that is, the display region AA.

An upper portion of the interlayer insulating film 121 including the active layer contact hole (not shown) intersects the gate wiring (not shown), defines the pixel region (not shown), and a second metal material, for example, A data wire made of at least one of aluminum (Al), an aluminum alloy (AlNd), copper (Cu), a copper alloy, molybdenum (Mo), molybdenum (MoTi), chromium (Cr), titanium (Not shown), and a power supply wiring (not shown) is formed therebetween. At this time, the power supply wiring (not shown) may be formed on the layer on which the gate wiring (not shown) is formed, that is, on the gate insulating film 113 so as to be spaced apart from the gate wiring (not shown).

The source region 109b and the drain region 109c, which are spaced apart from each other and exposed through the active layer contact hole (not shown), are formed in respective driving regions (not shown) and switching regions (not shown) on the interlayer insulating layer 121, And a source electrode 127a and a drain electrode 127b made of the same second metal material as the data line (not shown) are formed. At this time, the active layer 109, the gate insulating film 113, the gate electrode 115a, and the interlayer insulating film 121, which are sequentially stacked in the driving region (not shown) The electrode 127b constitutes a driving thin film transistor (not shown), DTr.

Although the data line (not shown) and the source electrode 127a and the drain electrode 127b both have a single-layer structure in the figure, these components may have a double-layer structure or a triple-layer structure have.

Although not shown in the figure, a switching thin film transistor (not shown) having the same layer structure as the driving thin film transistor DTr is also formed in the switching region (not shown). At this time, the switching thin film transistor (not shown) is electrically connected to the driving thin film transistor DTr, the gate wiring (not shown) and the data wiring (not shown). That is, the gate wiring (not shown) and the data wiring (not shown) are respectively connected to a gate electrode (not shown) and a source electrode (not shown) of the switching thin film transistor A drain electrode (not shown) of the TFT is electrically connected to a gate electrode 115a of the driving thin film transistor.

In the organic electroluminescent device according to the present invention, the driving thin film transistor DTr and the switching thin film transistor (not shown) have an active layer 109 of polysilicon and are formed of a top gate type However, the driving switching thin film transistor (not shown) and the switching thin film transistor (not shown) may be formed as a bottom gate type having an active layer of amorphous silicon.

When the driving thin film transistor (not shown) and the switching thin film transistor (not shown) are formed of a bottom gate type, the laminated structure is separated from the active layer of the gate electrode / gate insulating film / pure amorphous silicon, And a source electrode and a drain electrode spaced apart from each other and / or an active layer made of an amorphous silicon ohmic contact layer. At this time, the gate wiring is formed to be connected to the gate electrode of the switching thin film transistor in the layer where the gate electrode is formed, and the data wiring is formed to be connected to the source electrode in the layer in which the source electrode of the switching thin film transistor is formed.

A passivation film 131 having a drain contact hole (not shown) exposing the drain electrode 127b of the driving thin film transistor DTr is formed on the driving thin film transistor DTr and the switching thin film transistor And a planarizing film 133 are stacked. At this time, as the interlayer insulating film 121, an insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN x), which is an inorganic insulating material, is used. The planarization film 133 is selected from organic material groups including photoacid.

At least one second line hole pattern 135b is formed in a portion of the passivation film 131 located in the pad region PD. At this time, the second line hole pattern 135b is formed to face the long side of the pad region PD, that is, the display region AA. At this time, the at least one second line hole pattern 135b may be formed so as not to overlap or overlap the first line hole pattern 125c below the second line hole pattern 135b.

The planarization layer 133 is connected to the drain electrode 127b of the driving thin film transistor DTr through the drain contact hole (not shown), and the first electrode 137 are formed. The first electrode 137 may be a transparent electrode or a reflective electrode. When the first electrode 137 is used as a transparent electrode, the first electrode 137 may be formed of ITO, IZO, ZnO, or In ₂ O ₃ . It is possible to form ITO, IZO, ZnO, or In ₂ O ₃ thereon after forming a reflective film with Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, have.

Above the first electrode 137, a pixel region defined by an insulating material, for example, benzocyclobutene (BCB), polyimide, or photo acryl is formed in a boundary region of each pixel region. A film 139 is formed. At this time, the pixel defining layer 139 is formed so as to overlap the rim of the first electrode 137 surrounding each pixel region (not shown), and the display region AA has a plurality of openings as a whole It is in the form of a lattice.

An organic light emitting layer 141 composed of an organic material emitting red, green and blue light is formed on the first electrode 137 in each pixel region surrounded by the pixel defining layer 139. A hole injection layer, a hole transporting layer, a light emitting layer (light emitting layer), and a hole transporting layer (light emitting layer) may be formed on the organic light emitting layer 141 to form a single layer of an organic light emitting material. a material layer, an electron transporting layer, and an electron injection layer.

A second electrode 143 is formed on the entire surface of the display area AA including the organic light emitting layer 141 and the pixel defining layer 139. The organic light emitting layer 141 interposed between the first electrode 137 and the second electrode 143 and the two electrodes 137 and 141 constitutes the organic electroluminescent device E.

Accordingly, when a predetermined voltage is applied to the first electrode 137 and the second electrode 143 according to the selected color signal, the organic electroluminescent device E is turned on and the holes injected from the first electrode 137, Electrons provided from the electrode 143 are transported to the organic light emitting layer 141 to form an exciton. When the exciton transitions from the excited state to the ground state, light is emitted and emitted as visible light. At this time, the emitted light passes through the transparent second electrode 143 and exits to the outside, so that the plastic organic electroluminescent device realizes an arbitrary image.

A lower passivation film 145 made of silicon oxide (SiO ₂ ) or silicon nitride (SiNx), which is an inorganic insulating material, is formed on the entire surface of the substrate including the second electrode 143. Since the second electrode 143 can not completely inhibit the moisture permeation into the organic light emitting layer 141, the lower passivation film 145 is formed on the second electrode 143, 141 can be completely suppressed.

An organic layer 147 made of a polymer organic material such as a polymer is formed on the display area AA on the lower passivation layer 145. As the polymer thin film constituting the organic layer 147, an olefin polymer (polyethylene, polypropylene), a polyethylene terephthalate (PET), an epoxy resin, a fluoro resin, a polysiloxane Can be used.

An insulating material, for example, silicon oxide (SiO ₂ ) or silicon nitride (SiN x), which is an inorganic insulating material, is formed on the entire surface of the substrate including the organic layer 147 to prevent moisture from penetrating through the organic layer 147. ) Is further formed on the upper passivation film 149.

A protective film 151 is positioned opposite the entire surface of the substrate including the upper passivation film 149 for encapsulation of the organic light emitting device E. The substrate 101 and the protective film 151 (Not shown) made of any of frit, organic insulating material and high molecular material which is transparent and has adhesive properties is interposed between the substrate 101 and the barrier film 151 completely without air layer And a polarizing plate 153 is disposed on the protective film 151.

The substrate 101 and the barrier film 151 are fixed by a pressure-sensitive adhesive (not shown) to form a panel state, thereby forming an organic electroluminescent device according to the present invention.

In order to make the organic electroluminescent device having the above-described structure into a plastic organic electroluminescent device, first, the back surface of the substrate 101 of the organic electroluminescent device is cleaned, and then the substrate 101 and the polyimide layer The substrate 101 is separated from the organic electroluminescence device so that the sacrificial layer 103 interposed between the substrate 101 and the substrate 101 is separated by heat.

Then, a plastic organic electroluminescence device is formed by laminating a back plate (not shown) on the surface of the polyimide layer 105 of the separated organic electroluminescence device.

As described above, according to the plastic organic electroluminescent device according to the present invention, when the plastic organic electroluminescent device is manufactured, the flexible organic electroluminescent device is located in the pad region PD to which the printed circuit board (FPCB) Line hole patterns are formed on the surface of a plurality of inorganic films, that is, a gate insulating film, an interlayer insulating film, or a passivation film so as to bypass the crack path and prevent transition to the inside of the device, thereby minimizing damage to the plastic organic electroluminescence device.

In particular, by forming a plurality of line-hole patterns at weak points adjacent to a scribe line (SL), critical peaks can be avoided by bypassing line breakage and cracking at the weak points, It is possible to prevent the in-panel wiring cracking.

A method of manufacturing a plastic organic electroluminescent device according to the present invention will now be described with reference to FIGS. 7A through 7S.

7A to 7 S are process sectional views schematically showing a method of manufacturing a plastic organic electroluminescent device according to the present invention.

As shown in FIG. 7A, a glass substrate 101 having a display area AA and a non-display area NA defined by a pad area PD outside the display area AA is prepared . At this time, the substrate 101 is peeled off after the fabrication of the organic electroluminescence device, and the back plate 161 is laminated with a plastic back plate (not shown in FIG. 7 S 161) The plastic organic electroluminescent device (OLED) is made of a flexible glass substrate or a plastic material having flexible characteristics so that display performance can be maintained even when the organic electroluminescent device (OLED) is bent like a paper.

Next, a polyimide layer 105 is formed on the substrate 101, and an inorganic insulating material such as an inorganic insulating material such as SiO ₂ (SiO ₂ ) is formed on the polyimide layer 105. ) Or silicon nitride (SiN x) is formed on the buffer layer 107. The reason why the buffer layer 107 is formed under the active layer 109 formed in the subsequent process is that the active layer 109 is formed by the release of alkali ions from the inside of the substrate 101 during the crystallization of the active layer 109 109) of the semiconductor device.

A sacrificial layer 103 made of amorphous silicon or silicon nitride (SiNx) is formed between the substrate 101 and the polyimide layer 105. The sacrificial layer 103 is formed by a laser And serves to facilitate the peeling of the substrate 101 from the polyimide layer 105 through an irradiation process.

(Not shown) and a switching region (not shown) in each pixel region in the upper display region AA. The central portion of the pixel region includes a channel region 109a forming a channel, An active layer 109 composed of a source region 109b and a drain region 109c doped with a high concentration of impurities is formed on both sides of the channel region 109a.

 Then, as shown in FIG. 7B, the active layer 109 is formed on the buffer layer 107. At this time, the active layer 109 is made of pure polysilicon in each pixel region in the display region AA corresponding to the driving region (not shown) and the switching region (not shown).

Then, as shown in FIG. 7C, a first photoresist layer (not shown) is coated on the buffer layer (not shown), and the first photoresist layer (not shown) is selectively patterned through an exposure process and a development process 1 photoresist pattern 111 is formed.

Then, as shown in FIG. 7D, the active layer 109 is selectively removed using the first photoresist pattern 111 as an etching mask.

7E, the first photoresist pattern 111 is removed, and a gate insulating layer 113 and a first metal material layer 115 are formed on the buffer layer 107 including the active layer 109. Then, Respectively. The first metal material layer 115 may be formed of a first metal material having low resistance characteristics such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum Titanium (MoTi), and may have a single-layer structure, or may be formed of two or more of the first metal materials to have a double layer structure or a triple layer structure. In the drawing, the gate electrode and the gate wiring (not shown) have a single-layer structure.

Then, a second photoresist film (not shown) is coated on the first metal material layer 115, and then the second photoresist film (not shown) is selectively patterned through an exposure and development process to form a second photoresist pattern 117 are formed.

Next, as shown in FIG. 7F, the first metal material layer 115 is selectively etched using the second photoresist pattern 117 as an etching mask to form a gate electrode 115a. At this time, a gate wiring (not shown) extending in one direction is formed on the gate insulating layer 113, which is connected to the gate electrode 115a formed in the switching region (not shown).

The second photoresist pattern 117 is then removed and impurities are implanted into the active layer 109 under both sides of the gate electrode 115a to form a channel region 109a in the center of the active layer 109, And a source region 109b and a drain region 109c spaced apart from each other with reference to the channel region 109a.

Then, the said gate electrode (115a) and a gate wiring (not shown) over the display region isolated in the front material, such as a silicon oxide inorganic insulating material (SiO ₂₎ or silicon nitride (SiNx) as shown in Figure 7g The interlayer insulating film 121 is formed.

Next, a third photoresist layer 123 is formed by applying a third photoresist layer (not shown) on the interlayer insulating layer 121, and then selectively patterning the photoresist layer 123 through an exposure and development process.

7H, the interlayer insulating layer 121 and the underlying gate insulating layer 125 are selectively etched using the third photoresist pattern 123 as an etching mask to form a source region 109 of the active layer 109, A source region contact hole 125a and a drain region contact hole 125b exposing the source region 109b and the drain region 109c are simultaneously formed. At this time, at the time of forming the source region contact hole 125a and the drain region contact hole 125b, a portion of the interlayer insulating layer 121 located in the pad region PD is also provided with at least one line hole pattern 125c ) Are also formed. Here, the first line hole pattern 125c is formed facing the long side direction of the pad region PD, that is, the display region AA.

Next, as shown in FIG. 7I, the third photoresist pattern 123 is removed, and a gate wiring (not shown) is formed on the interlayer insulating layer 121 including the first line hole pattern 125c , The pixel region (not shown) is defined and a second metal material layer 127 is formed. At this time, the second metal material layer 127 may be formed of one selected from the group consisting of Al, AlNd, Cu, a copper alloy, Mo, ). ≪ / RTI >

Next, a fourth photosensitive film pattern 129 is formed by applying a fourth photosensitive film (not shown) on the second metal material layer 127, and then patterning through an exposure and development process.

Next, as shown in FIG. 7J, the second metal material layer 127 is selectively etched using the fourth photoresist pattern 129 as an etching mask to cross the gate wiring (not shown) (Not shown) defining a region P and power supply wiring (not shown) spaced apart from the data wiring. At this time, the power supply wiring (not shown) may be formed on the layer on which the gate wiring (not shown) is formed, that is, on the gate insulating film so as to be spaced apart from the gate wiring (not shown).

Further, at the time of forming the data line (not shown), the interlayer insulating film 121 is separated from the driving region (not shown) and the switching region (not shown), and the source region contact hole 125a and drain A source electrode 127a and a source electrode 127b which are in contact with the source region 109b and the drain region 109c of the active layer 109 through the region contact hole 125b and made of the same second metal material as the data line Drain electrodes 127b are simultaneously formed. At this time, the active layer 109, the gate insulating film 113, the gate electrode 115a, and the interlayer insulating film 121, which are sequentially stacked in the driving region (not shown) The electrode 127b constitutes a driving thin film transistor (not shown) DTr.

Although the data line (not shown) and the source electrode 127a and the drain electrode 127b both have a single-layer structure in the figure, these components may have a double-layer structure or a triple-layer structure have.

Although not shown in the figure, a switching thin film transistor (not shown) having the same stacking structure as the driving thin film transistor is also formed in the switching region (not shown). The switching thin film transistor (not shown) is electrically connected to the driving thin film transistor (not shown), the gate wiring (not shown), and the data wiring (not shown). That is, the gate wiring (not shown) and the data wiring (not shown) are respectively connected to a gate electrode (not shown) and a source electrode (not shown) of the switching thin film transistor A drain electrode (not shown) of the TFT is electrically connected to a gate electrode 115a of the driving thin film transistor.

In the organic electroluminescent device according to the present invention, the driving thin film transistor (not shown) and the switching thin film transistor (not shown) have a polysilicon active layer 109 and a top gate type The driving switching thin film transistor and the switching thin film transistor (not shown) may be formed of a bottom gate type having an active layer of amorphous silicon.

When the driving thin film transistor (not shown) and the switching thin film transistor (not shown) are formed of a bottom gate type, the laminated structure is separated from the active layer of the gate electrode / gate insulating film / pure amorphous silicon, And a source electrode and a drain electrode which are spaced apart from each other with an active layer made of a contact layer. At this time, the gate wiring is formed to be connected to the gate electrode of the switching thin film transistor in the layer where the gate electrode is formed, and the data wiring is formed to be connected to the source electrode in the layer in which the source electrode of the switching thin film transistor is formed.

7K, after the fourth photoresist pattern 129 is removed, a passivation film 131 is formed on the entire surface of the substrate including the source electrode 127a and the drain electrode 127b. As the passivation film 131, an insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN x), which is an inorganic insulating material, is used.

Then, as shown in FIG. 7L, a planarization layer 133 made of an organic material is formed on the passivation layer 131. Next, as shown in FIG. The organic material may be a hydrophobic organic material having an insulating property and may be formed of one selected from the group consisting of polyacryl, polyimide, polyamide (PA), benzocyclobutene (BCB), and phenol resin .

Subsequently, as shown in FIG. 7M, the planarization film 133 and the passivation film 131 under the passivation film 131 are sequentially etched to form a drain contact hole 135a exposing the drain electrode 127b. At this time, at the time of forming the drain contact hole 135a, at least one second line hole pattern 135b is also formed in the portion of the passivation film 131 located in the pad region PD. The second line hole pattern 135b is formed to face the long side direction of the pad area PD, that is, the display area AA, and the first line hole pattern 125c formed on the interlayer insulating film 121 They may be formed so as not to overlap each other or overlap each other.

7N, a conductive material layer (not shown) is deposited on the planarization layer 133, and then the conductive material layer is selectively etched through a mask process to form the drain contact holes 135a The first electrode 137 is formed to be in contact with the drain electrode 127b of the thin film transistor DTr via the first electrode 137 and the second electrode 137, In this case, the conductive material layer (not shown) may be formed of a transparent electrode and a reflective electrode. When used as a transparent electrode, the conductive material layer may be formed of ITO, IZO, ZnO, or In ₂ O ₃ , A reflective film is formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr or a compound thereof and then ITO, IZO, ZnO or In ₂ O ₃ is formed thereon It is possible.

Next, as shown in FIG. 7O, a first electrode 137 is formed on the boundary region of each pixel region with, for example, benzocyclobutene (BCB), polyimide, or photo acryl, (Not shown) is formed.

Then, the insulating material layer (not shown) is selectively patterned to form a pixel defining layer 139. In this case, the pixel defining layer 139 is formed so as to overlap the rim of the first electrode 137 surrounding the pixel region, and the display region AA has a lattice shape having a plurality of openings as a whole have.

7P, an organic light emitting layer 141 is formed on the first electrode 137 in each pixel region surrounded by the pixel defining layer 139 to emit red, green, and blue light, respectively. Here, the organic light emitting layer 141 may be a single layer made of an organic light emitting material. Alternatively, a hole injection layer, a hole transporting layer, a light emitting layer, A light emitting layer, an emitting material layer, an electron transporting layer, and an electron injection layer.

Next, as shown in FIG. 7Q, a second electrode 143 is formed on the entire surface of the display area AA including the organic light emitting layer 141 and the upper portion of the pixel defining layer 139. When the second electrode 143 is used as a transparent electrode, the second electrode 143 is used as a cathode electrode. Therefore, a metal having a low work function, that is, Li, Ca And a transparent electrode such as ITO, IZO, ZnO, or In ₂ O _{3 is formed} thereon by depositing LiF / Ca, LiF / Al, Al, Ag, Mg, An auxiliary electrode layer or a bus electrode line can be formed. When used as a reflective electrode, Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg,

Accordingly, the organic electroluminescent device E emits red, green, and blue light according to the current flow to display predetermined image information. The organic electroluminescent device E is connected to the drain electrode 127b of the thin film transistor, A second electrode 143 provided so as to cover all the pixels and supplying negative power, and a second electrode 143 disposed between the first electrode 137 and the second electrode 143 to emit light And an organic light emitting layer 141.

The first electrode 137 and the second electrode 143 are insulated from each other by the organic light emitting layer 141 and a voltage of different polarity is applied to the organic light emitting layer 141 to emit light in the organic light emitting layer 141 .

Accordingly, when a predetermined voltage is applied to the first electrode 137 and the second electrode 143 according to a selected color signal, the organic light emitting diode E is turned on and the holes injected from the first electrode 137, Electrons provided from the electrode 141 are transported to the organic light emitting layer 141 to form an exciton. When the exciton transitions from the excited state to the ground state, light is emitted and emitted as a visible light. At this time, the emitted light passes through the transparent second electrode 143 and exits to the outside, so that the plastic organic electroluminescent device realizes an arbitrary image.

Then, the second electrode 143, the substrate front surface of insulating material, in particular an inorganic insulating material, a silicon (SiO ₂₎ or silicon nitride (SiNx), a lower passivation film 145 made of oxide including, as shown in Fig 7r . Since the second electrode 143 can not completely inhibit the moisture permeation into the organic light emitting layer 141, the lower passivation film 145 is formed on the second electrode 143, 141 can be completely suppressed.

Next, an organic layer (not shown) made of a polymer organic material such as a polymer is applied to the display area AA and the non-display area NA on the lower passivation layer 145 through a coating method such as a screen printing method. (147). As the polymer thin film constituting the organic layer 147, an olefin polymer (polyethylene, polypropylene), a polyethylene terephthalate (PET), an epoxy resin, a fluoro resin, a polysiloxane Can be used. The organic film 147 is formed on the display area AA.

Then, an insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN x), which is an inorganic insulating material, is formed on the entire surface of the substrate including the organic film 147 to prevent moisture from penetrating through the organic film 147. The upper passivation film 149 is formed.

Next, a protective film 151 is placed opposite to the entire surface of the substrate including the upper passivation film 149 for encapsulation of the organic light emitting device E. The substrate 101 and the protective film 151 (Not shown) made of any one of frit, organic insulating material and high molecular material having transparency and adhesive property between the substrate 101 and the protective film 151 Then, a polarizing plate 153 is attached to the upper portion of the protective film 151.

The substrate 101 and the barrier film 151 are fixed by a pressure-sensitive adhesive (not shown) to form a panel state, thereby completing the fabrication of the organic electroluminescent device according to the present invention.

Then, as shown in FIG. 7S, the rear surface of the substrate 101 of the organic electroluminescent device is cleaned to make the organic electroluminescent device having the above-described structure into a plastic organic electroluminescent device, The sacrificial layer 103 interposed between the substrate 101 and the polyimide layer 105 is separated by heat so that the substrate 101 is peeled from the organic electroluminescence device.

Next, a back plate (161) is laminated on the surface of the polyimide layer (105) of the separated organic electroluminescence device to complete the process of manufacturing the plastic organic electroluminescence device according to the present invention.

8 is a schematic perspective view of a plastic organic electroluminescent device according to the present invention.

9 is an enlarged plan view schematically showing a pad region of a plastic organic electroluminescence device according to the present invention, and is a plan view schematically showing a state where a crack is bypassed along a plurality of line hole patterns.

8, a plurality of inorganic films located in a pad region PD to which a printed circuit board (FPCB) 170, which is a weak region, is connected due to repetition of warping and spreading in manufacturing a plastic organic electroluminescence device, The line hole patterns 125c and 135b are formed on the surface of the interlayer insulating film 121 or the passivation film 131, for example.

9, the interlayer insulating film 121 located in the pad region PD to which the printed circuit board (FPCB) 170, which is a weak region, is connected due to repetition of deflection and spreading during the manufacture of the plastic organic electroluminescence device, Or by forming the line hole patterns 125c and 135b adjacent to the scribe line SL on the surface of the passivation film 131, cracks generated due to absorption and destruction at weak points at the time of external impact, The transition path is bypassed, thereby minimizing the transition of the crack into the display region.

Meanwhile, another embodiment of the line hole pattern provided in the pad region of the plastic organic electroluminescence device according to the present invention will be described in brief with reference to FIG.

10 is a perspective view schematically showing another embodiment of the line hole pattern of the pad region of the plastic organic electroluminescence device according to the present invention.

In the plastic organic electroluminescent device according to the present invention, a separate member, for example, a camera or other members may be disposed in the plastic organic electroluminescent device, if necessary, depending on the application field. In this case, Since these members can not be arranged, the pad region PD is used. At this time, since these cameras or other components must be disposed in a part of the pad area PD, the area of the pad area PD needs to be reduced accordingly.

As a result, the area of the pad region PD of the plastic organic electroluminescence device according to the present invention is reduced, so that the shape of the line hole pattern formed in the pad region PD must be changed.

The first and second line hole patterns 225 and 235 according to another embodiment of the present invention may be formed by patterning the gate insulating film 113, the interlayer insulating film 121, and the passivation film 131 in the same manner as in the first embodiment.

That is, the first line hole pattern 225 is formed in an interlayer insulating film (not shown) 121, and the second line hole pattern 235 is formed in a passivation film (not shown in FIG. As shown in FIG.

10, a display area AA is defined in a substrate (not shown), and a pad area PD is formed outside the display area AA A non-display area NA is defined.

A separate space 240 in which the camera or other members can be disposed is provided at both side edges of the non-display area NA adjacent to the pad area PD. At this time, the pad region PD has a smaller area than that of the first embodiment of the present invention, thereby forming an interlayer insulating film (not shown) or a passivation film (not shown) located in the pad region PD The shape of the first and second line hole patterns 225 and 235 is also changed.

Each of the first and second line hole patterns 225 and 235 includes a straight line portion 225a and a straight line portion 225b and a bent portion 235b. And the bent portions 225b and 235b correspond to the both side end regions of the first and second line hole patterns 225 and 235. The bent portions 225b and 235b correspond to the center regions of the first and second line hole patterns 225 and 235,

Accordingly, in consideration of the reduction in the area of the pad region PD as required, the present invention can provide a plastic organic electroluminescence (EL) device by forming a bent portion 225b in both side end regions of the first and second line hole patterns 225 and 235, It is possible to minimize the damage to the plastic organic electroluminescence device by preventing the crack from being caused to pass through the crack due to the impact caused by repetition of bending and spreading during the manufacture of the device and preventing the transition to the inside of the device.

As described above, according to the plastic organic electroluminescent device and the method for manufacturing the plastic organic electroluminescent device according to the present invention, the pad area PD to which the printed circuit board (FPCB), which is a weak region, is connected due to repetition of warping and spreading, A line hole pattern is formed on the surface of the gate insulating film, the interlayer insulating film, or the passivation film to bypass the crack path to prevent the transition to the inside of the device, thereby minimizing the damage to the plastic organic electroluminescence device have.

Particularly, by forming a line-hole pattern at a weak point adjacent to a scribe line (SL), it is possible to prevent line breakage and cracks at the weak point at the time of cracking, It is possible to prevent wiring cracking.

In addition, another embodiment of the line hole pattern provided in the pad region of the plastic organic electroluminescence device according to the present invention will be schematically described with reference to FIG.

11 is a perspective view schematically showing another embodiment of the line hole pattern of the pad region of the plastic organic electroluminescence device according to the present invention.

The crack preventing hole pattern 325 according to another embodiment of the present invention may be formed on at least one of the gate insulating film 113, the interlayer insulating film 121, and the passivation film 131 of the first embodiment of the present invention shown in FIG. And the case where it is the same as the case in which it is formed in the case of FIG. Here, the case where the crack prevention hole pattern 325 is formed in an interlayer insulating film (not shown) 121 will be described as an example.

11, a plastic organic electroluminescent device 300 according to the present invention includes a display region AA and a non-display region (not shown) including a pad region PD outside the display region AA A scribe line SL is formed outside the non-display area NA and a first trimming line SL is formed on an upper surface and a lower edge of the pad area PD, A trimming line CL1 is defined and a second trimming line CL2 is defined on the top and bottom edge portions of the non-display area NA located on the opposite side of the pad region PD.

The first trimming line CL1 defined on the upper and lower edge portions of the pad region PD of the panel during manufacture of the flexible organic electroluminescence device 300 and the first trimming line CL2 located on the opposite side of the pad region PD A trimming cutting is performed on the second trimming line CL2 defined in the upper and lower edge portions of the non-display area NA.

Referring to FIG. 11, a first hole pattern 325a surrounding the first trimming line CL1 is formed on the top and bottom edge portions of the pad region PD. The first hole pattern 325a may be formed in a curved shape or a linear shape.

At this time, the first hole pattern 325a forms a bypass step to prevent cracks from penetrating into the panel from the trimming line.

Therefore, the first hole pattern 325a forms a detour step for preventing cracks from penetrating into the panel from the first trimming line CL1. Therefore, The cracks are prevented from being transmitted from the first trimming line CL1 of the upper and lower edge portions of the display region AA to the display region AA.

11, a non-display area NA located outside the display area AA may extend from the first hole pattern 325a of the pad area PD to define the display area AA The second hole pattern 325b is integrally formed with the first hole pattern 325a so as to form a crack prevention hole pattern 325. [ At this time, the second hole pattern 325b is formed in a straight line shape. The second hole pattern 325b forms a detour step to prevent cracks from penetrating into the panel from the second trimming line CL2 of the non-display area NA.

Accordingly, the second hole pattern 325b forms a detour step to prevent cracks from penetrating into the panel from the second trimming line CL2 of the non-display area NA, A crack is prevented from being transmitted from the trimming line of the non-display area to the display area.

As described above, the plastic organic electroluminescent device and the manufacturing method according to the present invention include a first hole pattern surrounding the first trimming line formed on the top and bottom edge portions of the pad region, and a second hole pattern extending from the first hole pattern A crack prevention hole pattern is formed by integrally forming a second hole pattern formed so as to surround the display region so that cracks are prevented from being transmitted from the first trimming line of the upper and lower edge portions of the pad region to the display region In addition, cracks are prevented from being transmitted from the second trimming line of the non-display area to the display area.

It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof.

It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

101: substrate 103: sacrificial layer
105: polyimide layer 107: buffer layer
109: active layer 113: gate insulating film 115a: gate electrode 121: interlayer insulating film
125c: first line hole pattern 127a: source electrode
127b: drain electrode 131: passivation film 133: planarization film 135a: drain contact hole
135b: second line hole pattern 137: first electrode
139: pixel defining layer 141: organic light emitting layer
143: second electrode 145: lower passivation film
147: organic film 149: upper passivation film
151: protective film 153: polarizer
161: Back Plate

Claims (15)

A substrate on which a display region including a plurality of pixel regions and a non-display region including a pad region on the outer side of the display region are defined;
A plurality of thin film transistors formed in the pixel regions on the substrate;
An interlayer insulating film and a passivation film stacked on a display region and a non-display region of the substrate including the thin film transistor;
At least one line hole pattern formed on at least one of the interlayer insulating film and the passivation film located in the non-display area;
A planarization film formed on the passivation film;
A first electrode formed in each pixel region on the planarization film and connected to a drain electrode of the thin film transistor;
A pixel defining layer formed around each pixel region and a non-display region of the substrate including the first electrode;
An organic light emitting layer formed separately on the first electrode for each pixel region; And
And a second electrode formed on the entire surface of the display region on the organic light emitting layer. The plasma display panel of claim 1, further comprising: a lower passivation film formed on the entire surface of the substrate including the second electrode; An organic film formed on the lower passivation film on the display region; An upper passivation film formed on the first passivation film including the organic film; A protective film disposed facing the substrate; And a polarizer attached to the protective film. ≪ RTI ID = 0.0 > 11. < / RTI > The plastic organic electroluminescent device according to claim 1, wherein the substrate is made of a plastic glass substrate or a plastic material having flexibility. The plastic organic electroluminescent device according to claim 1, wherein the at least one or more line hole patterns formed in the interlayer insulating film and the passivation film do not overlap or overlap with each other. 2. The plastic organic electroluminescence device according to claim 1, wherein the line-hole pattern is formed in a pad region of the non-display region or is formed integrally with the pad region and a non-display region located outside the display region . The plastic organic electroluminescent device according to claim 1, wherein at least one line hole pattern is formed in a pad region of the gate insulating film. The display device according to claim 5, wherein the line hole pattern formed in the pad region of the non-display region is a curved line hole pattern formed so as to surround a trimming line defined in upper and lower edge portions of the pad region, A plastic organic electroluminescent device. 6. The touch panel of claim 5, wherein the line-hole pattern formed integrally with the non-display area located at the outer periphery of the display area as well as the pad area includes a trimming line defined in the top and bottom edge parts of the pad area, And a linear hole pattern extending from the curved hole pattern and surrounding the display area in a non-display area of an outer periphery of the display area, the crack preventing hole pattern being formed integrally with the plastic Organic electroluminescent device. Providing a substrate on which a display area including a plurality of pixel areas and a non-display area including a pad area on the outside of the display area are defined;
Forming a plurality of thin film transistors in each pixel region on the substrate;
Stacking an interlayer insulating film and a passivation film on the entire surface of the substrate including the thin film transistor;
Forming at least one line hole pattern in at least one of the interlayer insulating film and the passivation film in the non-display area;
Forming a planarization film on the passivation film;
Forming a first electrode connected to a drain electrode of the thin film transistor in each pixel region on the planarization film;
Forming a pixel defining layer around each pixel region of the substrate including the first electrode;
Forming an organic light emitting layer for each pixel region on the first electrode; And
And forming a second electrode on the entire surface of the display region including the organic light emitting layer. The method as claimed in claim 9, wherein after forming the second electrode on the entire surface of the display region including the organic light emitting layer,
Forming a lower passivation film on the entire surface of the substrate including the second electrode;
Forming an organic film on the lower passivation film on the display area;
Forming an upper passivation film on the first passivation film including the organic film;
Sequentially forming a protective film and a polarizing plate on the upper passivation film;
Peeling the substrate; And
Further comprising the step of: laminating a back plate to a portion where the substrate is peeled off. 10. The method of claim 9, wherein the at least one or more line hole patterns formed in the interlayer insulating layer and the passivation layer overlap or do not overlap with each other. 10. The method of manufacturing a plastic organic electroluminescence device according to claim 9, wherein the line-hole pattern is formed in a pad region of the non-display region or in a non-display region located in the pad region and an outline of the display region . 10. The method of claim 9, wherein at least one line-hole pattern is formed in a pad region of the gate insulating layer. 13. The display device of claim 12, wherein the line hole pattern formed in the pad region of the non-display region is a curved line hole pattern formed to surround a trimming line defined in the upper and lower edge portions of the pad region, Gt; < / RTI > 13. The display device of claim 12, wherein the line-hole pattern formed integrally with the non-display area located at the periphery of the display area as well as the pad area includes a trimming line defined in the top and bottom edge parts of the pad area, And a linear hole pattern extending from the curved hole pattern and surrounding the display area in a non-display area of an outer periphery of the display area are integrally formed. A method of manufacturing an electroluminescent device.

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