KR20150002119A - Organic electro luminescent device and method of fabricating the same - Google Patents

Abstract

The present invention provides an organic electroluminescent device and a manufacturing method thereof. The organic electroluminescent device according to the present invention includes a first substrate on which a display region with a plurality of pixel regions is defined; a first electrode which is formed at each pixel region of the first substrate; a bank which overlaps the edge of the first electrode on the display region, has a first height, and surrounds each pixel region; an organic light emitting layer which is formed on the first electrode surrounded by the bank; a second electrode which is formed with a first thickness on the front side of the display region on the upper side of the organic light emitting layer without disconnection and has a protruding part corresponding to the bank; and an auxiliary wire which is selectively formed by corresponding to the protruding part by the bank between the bank and the second electrode or on the second electrode with a second thickness.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device and a method of fabricating the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device, and more particularly, to an organic electroluminescent device capable of improving the transmittance of a cathode electrode while maintaining a low resistance characteristic in a structure of a top emission type, and a method of manufacturing the same. .

An organic electroluminescent device, which is one of flat panel displays (FPDs), has high luminance and low operating voltage characteristics. In addition, since it is a self-luminous type that emits light by itself, it has a large contrast ratio, can realize an ultra-thin display, can realize a moving image with a response time of several microseconds (μs), has no viewing angle limit, And it is driven with a low voltage of 5 to 15 V direct current, so that it is easy to manufacture and design a driving circuit.

In addition, since the manufacturing process of the organic electroluminescent device is all the deposition and encapsulation equipment, the manufacturing process is very simple.

Accordingly, the organic electroluminescent device having the above-described advantages has recently been used in various IT devices such as a TV, a monitor, and a mobile phone.

Hereinafter, the basic structure of the organic electroluminescent device will be described in more detail.

BACKGROUND ART An organic electroluminescent device is largely composed of an array element and an organic electroluminescent diode. The array element includes a switching thin film transistor connected to a gate and a data line, and a driving thin film transistor connected to the organic light emitting diode. The organic light emitting diode includes a first electrode connected to the driving thin film transistor, Electrode.

In the organic electroluminescent device having such a configuration, light emitted from the organic light emitting layer is emitted toward the first electrode or the second electrode to display an image. Such an organic electroluminescent device is generally manufactured by a top emission type in which an image is displayed using light emitted toward the second electrode in consideration of an aperture ratio and the like.

However, due to the manufacturing characteristics of the organic electroluminescent device, the second electrode located above the organic luminescent layer can not be formed by sputtering, which is a general metal material evaporation method, to prevent damage to the organic luminescent layer, Which is formed by vacuum thermal evaporation which does not give a high temperature.

The first electrode is made of indium-tin-oxide (ITO), which is a transparent conductive material having a high work function value, to serve as an anode electrode. The second electrode has a low work function value And is made of a metal material.

However, since the metal material having a low work function value constituting the second electrode serving as the cathode electrode has opaque characteristics, if the opaque metal is formed to have a thickness of about 1000 to 4000 ANGSTROM Light can not penetrate.

Therefore, the second electrode made of an opaque metal material having a low work function value is formed to have a thickness of about 10 Å to about 200 Å to form a lower layer made of an opaque metal material in order to ensure transparency.

In this case, since the light transmittance of the second electrode is 15% or more, the brightness level of a general display device is obtained.

However, when the second electrode is formed to have a thickness of about 10 to 200 angstroms, the sheet resistance is 20? /? To 1000? / ?. In this case, the surface resistance of the second electrode itself is high, There is a problem that the display quality of the organic electroluminescent device is deteriorated because the luminance unevenness eventually occurs.

In addition, since the driving voltage of the organic electroluminescence device itself is relatively increased due to the high area term of the second electrode, the power consumption per unit time is increased, thereby causing a problem of causing rapid battery consumption And the like.

SUMMARY OF THE INVENTION The present invention has been conceived to solve the problems described above, and it is an object of the present invention to provide an organic electroluminescent device of the upper emission type, which is formed on the organic light emitting layer, And an object of the present invention is to provide an electroluminescent device and a manufacturing method thereof.

According to an aspect of the present invention, there is provided an organic electroluminescent device including a first substrate on which a display region having a plurality of pixel regions is defined; A first electrode formed on each of the pixel regions on the first substrate; A bank formed in a shape that overlaps the edge of each first electrode in the display region and has a first height and surrounds each pixel region; An organic light emitting layer formed on each of the first electrodes surrounded by the banks; A second electrode formed on the entire upper surface of the organic light emitting layer and having a first thickness without interruption, and a portion corresponding to the bank protruded; And an auxiliary wiring having a second thickness and selectively formed corresponding to a portion between the bank and the second electrode or over the second electrode due to the bank.

At this time, the first electrode has a double layer structure of a lower layer made of a reflective metallic material and an upper layer made of a transparent conductive material.

The second electrode is made of a metal material having a work function smaller than that of the first electrode, such as aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg), gold (Au), aluminum magnesium alloy (Al), an aluminum alloy (AlNd), copper (Cu), gold (Au), silver (Au), and the like, which are conductive materials having low resistance characteristics Ag). ≪ / RTI >

The first height is 1 to 10 탆, the first thickness is 10 to 200 Å, and the second thickness is 1000 to 4000 Å.

The auxiliary wiring is extended to a non-display area outside the display area and is connected to a Vss wiring for applying a signal voltage.

On the other hand, a gate and a data line crossing each other and defining the pixel region are formed on the first substrate under the first electrode. A power supply wiring formed on the same layer on which the gate wiring or the data wiring is formed so as to be spaced apart from the wiring; A switching thin film transistor provided in each pixel region and connected to the gate wiring and the data wiring; a driving thin film transistor connected to the power wiring and the switching thin film transistor; And a protective layer formed on the entire surface of the display region to cover the switching and driving thin film transistor and expose the drain electrode of the driving thin film transistor, Drain electrode.

And an encapsulation film serving as the second substrate in a form of covering the entire surface of the display area with the auxiliary wiring and the second electrode in contact with the first substrate or the second substrate facing the first substrate, .

According to another aspect of the present invention, there is provided a method of fabricating an organic electroluminescent device, comprising: forming a first electrode on each of the pixel regions on a first substrate having a plurality of pixel regions defined therein; Forming a bank having a first height and surrounding the edge of each first electrode in the display area and surrounding the pixel area; Forming an organic light emitting layer on each of the first electrodes surrounded by the banks; Forming a second electrode having a first thickness on the organic light emitting layer and formed on the entire surface of the display region without interruption and having a portion corresponding to the bank protruded; And selectively forming an auxiliary wiring corresponding to a portion of the second electrode having a second thickness and projecting due to the bank.

The step of selectively forming an auxiliary wiring corresponding to a portion protruding from the bank having a second thickness over the second electrode may include a step of forming a printing roll having a stage and a blanket on the surface thereof, Placing a substrate on which the second electrode is formed on the stage of a roll coating apparatus constituted by an ink supply slit for supplying an ink; Forming a conductive ink layer by coating a liquid conductive ink on the entire surface of the blanket; And the conductive ink layer is brought into contact with the protruding portion of the second electrode by rotating the blanket in one direction in accordance with the advancing speed of the stage, To a protruding portion of the substrate; And curing the conductive ink pattern transferred over the second electrode by heat treatment to form the auxiliary wiring.

According to another aspect of the present invention, there is provided a method of manufacturing an organic electroluminescent device, comprising: forming a first electrode on a first substrate on which a display region having a plurality of pixel regions is defined; Forming a bank having a first height and surrounding the edge of each first electrode in the display area and surrounding the pixel area; Forming an organic light emitting layer on each of the first electrodes surrounded by the banks; And forming a second electrode on the entire surface of the display region having a first thickness above the organic emission layer, wherein the second electrode has a second thickness selectively over the bank before forming the organic emission layer, The step of forming the wiring is further performed.

And forming an auxiliary wiring having a second thickness selectively over only the bank, the method comprising the steps of: providing a roll having a stage, a printing roll having a blanket on the surface thereof, and an ink supply slit for supplying conductive ink to the printing roll Placing a substrate on which said bank is formed on said stage of a coating apparatus; Forming a conductive ink layer by coating a liquid conductive ink on the entire surface of the blanket; The conductive ink layer and the upper surface of the bank are brought into contact with each other by moving the stage in one direction and rotating the blanket in one direction in accordance with the advancing speed of the stage to move the conductive ink layer to the bank of the second substrate, Transferring the image to an upper surface; And heat-treating and curing the conductive ink pattern transferred to the upper surface of the bank to form the auxiliary wiring.

On the other hand, the conductive ink has a size of several to several tens of nanometers, which is made of any one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), gold (Au) Wherein the first height is 1 to 10 탆, the first thickness is 10 to 200 Å, and the second thickness is 1000 to 4000 Å.

A gate line and a data line crossing each other on the first substrate to define the pixel region before forming the first electrode, a power line formed in the same layer on which the gate line or the data line is formed, A driving thin film transistor provided in the pixel region and connected to the gate wiring and the data wiring, a driving thin film transistor connected to the power wiring and the switching thin film transistor, and a driving thin film transistor covering the switching thin film transistor, The method of claim 1, further comprising forming a protective layer having a drain contact hole exposing a drain electrode of the transistor, wherein the first electrode is formed in each pixel region on the protective layer, Is formed .

In the organic electroluminescent device according to the present invention, a top emission type organic electroluminescent device is formed of a low-metal material having a relatively low work function and has a thickness of about 10 Å to 200 Å, thereby securing transparency, Further, since the auxiliary wiring is formed on the entire surface of the display area in correspondence with the entire surface of the display area and overlapped with the bank, the auxiliary wiring made of a metal material having a low resistance characteristic and having a lattice shape is provided on the entire display area, There is an effect that the voltage drop per position is suppressed and the luminance unevenness due to the voltage drop is suppressed to improve the display quality.

1 is a circuit diagram of one pixel of a general organic light emitting device.
2 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to a first embodiment of the present invention.
3 is a sectional view of a driving thin film transistor in an organic electroluminescent device according to a modification of the first embodiment of the present invention.
4 is a sectional view of a driving thin film transistor in an organic electroluminescent device according to still another modification of the first embodiment of the present invention.
FIG. 5 is a plan view schematically showing a planar structure of an organic electroluminescent device according to a first embodiment of the present invention. FIG.
FIG. 6 is a plan view schematically showing the structure of a conventional organic electroluminescent device having no auxiliary electrode as a comparative example. FIG.
FIGS. 7A to 7H are process diagrams for manufacturing an organic electroluminescent device according to a first embodiment of the present invention; FIG.
8 is a view schematically showing a roll coating apparatus used for manufacturing an organic electroluminescent device according to the first and second embodiments of the present invention.
9 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to a second embodiment of the present invention.
10A to 10E are cross-sectional views illustrating steps of manufacturing an organic electroluminescent device according to a second embodiment of the present invention.

Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the drawings.

First, the basic structure and operating characteristics of the organic electroluminescent device will be described in detail with reference to the drawings.

1 is a circuit diagram of one pixel of a general organic light emitting device.

As shown in the figure, each pixel defined as an area surrounded by a gate wiring and a data wiring in an organic electroluminescent device includes a gate wiring, a data wiring, a power wiring, a switching thin film transistor STr, A thin film transistor DTr, a storage capacitor StgC, and an organic light emitting diode E.

The gate line GL is formed in the first direction and is formed in the second direction intersecting with the first direction to define the pixel regions P A data line DL is formed, and a power supply line PL for applying a power source voltage is formed at a distance from the data line DL.

A switching thin film transistor STr is formed in a portion of each pixel where the data line DL and the gate line GL cross each other and a driving thin film transistor ST2 electrically connected to the switching thin film transistor STr DTr) are formed.

At this time, the first electrode, which is one terminal of the organic electroluminescent diode E, is connected to the drain electrode of the driving thin film transistor DTr, the second electrode which is the other terminal is connected to the power supply line PL, The power supply line PL transfers a power supply voltage to the organic light emitting diode E.

A storage capacitor StgC is formed between the gate electrode and the source electrode of the driving thin film transistor DTr.

Therefore, when a signal is applied through the gate line GL, the switching thin film transistor STr is turned on and the signal of the data line DL is transmitted to the gate electrode of the driving thin film transistor DTr, The driving thin film transistor DTr is turned on so that light is output through the organic electroluminescent diode E.

At this time, when the driving thin film transistor DTr is turned on, the level of a current flowing from the power supply line PL to the organic light emitting diode E is determined, It becomes possible to implement a gray scale.

The storage capacitor StgC maintains a constant gate voltage of the driving thin film transistor DTr when the switching thin film transistor STr is turned off so that the switching thin film transistor STr is turned off the level of the current flowing through the organic electroluminescent diode E can be maintained constant until the next frame even if the off state is established.

Hereinafter, the structure of the organic electroluminescent device according to the embodiment of the present invention for displaying an image by such driving will be described.

2 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to a first embodiment of the present invention. For convenience of description, a region where a switching thin film transistor is to be formed in each pixel region is defined as a switching region, and a region where a driving thin film transistor is to be formed is defined as a driving region. A driving thin film transistor is formed for each pixel region, Only one pixel region is shown.

The organic EL device 101 according to the first embodiment of the present invention includes a driving and switching thin film transistor DTr and an organic electroluminescent diode E, And an auxiliary wiring 168 made of a metal material having a low resistance characteristic and formed in a lattice shape along the boundary between the pixel electrode P and the second electrode 158 of the organic electroluminescent diode E, And a second substrate 170 for protecting and encapsulating the organic electroluminescent diode (E). At this time, the second substrate 170 may be replaced with an inorganic insulating film and / or an organic insulating film, or may be omitted by attaching a film.

First, the structure of the first substrate 110 including the driving and switching thin film transistor DTr (not shown) and the organic electroluminescent diode E will be described.

On the first substrate 110, a first region 113a in which a channel is formed is formed of pure polysilicon in each pixel region P, and a central portion of the pixel region P is doped with a high concentration of impurities on both sides of the first region 113a. And a second region 113b formed on the semiconductor layer 113. [

A buffer layer (not shown) made of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) may be further formed on the entire surface between the semiconductor layer 113 and the first substrate 110.

The buffer layer (not shown) prevents the deterioration of the characteristics of the semiconductor layer 113 due to the release of alkali ions from the inside of the first substrate 110 when the semiconductor layer 113 is crystallized.

A gate insulating layer 116 is formed on the entire surface of the semiconductor layer 113 and a gate electrode 116 corresponding to the first region 113a of the semiconductor layer 113 is formed on the gate insulating layer 116. [ 120 are formed.

The gate insulating layer 116 is connected to a gate electrode (not shown) of a switching thin film transistor (not shown) and extends in one direction to form a gate wiring (not shown). At this time, the gate electrode 120 (not shown) and the gate wiring (not shown) constituting the driving and switching thin film transistor DTr (not shown) are formed of a metal material having a low resistance property such as aluminum (Al) AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum alloy (MoTi), or a combination of two or more materials.

An interlayer insulating film 123 is formed on the entire surface of the gate electrode 120 (not shown) and the gate wiring (not shown). The interlayer insulating layer 123 and the gate insulating layer 116 under the semiconductor layer contact hole 125 expose the second regions 113b located on both sides of the first region 113a .

A data line 130 is formed on the interlayer insulating layer 123 including the semiconductor layer contact hole 125 so as to intersect the gate line (not shown) to define the pixel regions P.

The first region 113b and the second region 113b are separated from each other in the driving region DA and the switching region (not shown) above the interlayer insulating layer 123 and are exposed through the semiconductor layer contact hole 125, And drain electrodes 133 and 136 are formed.

A semiconductor layer 113 including the source and drain electrodes 133 and 136 and a second region 113b contacting the electrodes 133 and 136 and a gate electrode The insulating film 116 and the gate electrode 120 constitute a driving thin film transistor DTr and a switching thin film transistor (not shown), respectively.

The source and drain electrodes 133 and 136 spaced apart from the data line 130 may also be formed of a metal material having low resistance characteristics such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum alloy (MoTi), or a single layer or a multilayer structure.

The switching thin film transistor (not shown) is electrically connected to the driving thin film transistor DTr, the gate wiring (not shown) and the data wiring 130, and the data wiring 130 is connected to the switching thin film transistor The driving TFT DTr is connected to the power supply line (not shown) and the organic light emitting diode E (not shown).

In the organic EL device 101 according to the first embodiment of the present invention, the driving thin film transistor DTr and the switching thin film transistor (not shown) have a polysilicon semiconductor layer 113 and a top gate type The driving and switching thin film transistor (DTr) (not shown) is an example of the driving thin film transistor (FIG. 3) ) And 4 (a cross-sectional view of a driving thin film transistor in an organic electroluminescent device according to still another modification of the first embodiment of the present invention), a semiconductor layer of amorphous silicon (220 in FIG. 3) or an oxide Or a bottom gate type having a semiconductor layer 320 made of a semiconductor material.

3, the gate electrode 215, the gate insulating film 218, and the active layer 220a of pure amorphous silicon are spaced apart from each other, A semiconductor layer 220 composed of an ohmic contact layer 220b of impurity amorphous silicon and source and drain electrodes 233 and 236 spaced apart from each other or having a stacked structure of gate electrodes The oxide semiconductor layer 320, the etch stopper 322 and the source stopper 322 which are spaced apart from each other on the oxide semiconductor layer 320 and are in contact with the oxide semiconductor layer 320, Electrodes 333 and 336 are stacked.

In the case of the first substrate 210 (FIG. 3, 310 in FIG. 4) on which the bottom gate type driving and switching thin film transistor DTr (not shown) is formed, the gate wiring (not shown) (Not shown) is connected to a gate electrode (not shown) of the switching thin film transistor (not shown) on the same layer on which the switching thin film transistor And is connected to the source electrode (not shown) on the same layer where a source electrode (not shown) is formed.

2, power wiring (not shown) is formed on the same layer on which the gate wiring (not shown) is formed or the same layer on which the data wiring 130 is formed, although not shown in the drawing. The wiring (not shown) is connected to one electrode of the driving thin film transistor DTr.

In addition, a protective layer 140 is formed on the entire surface of the first substrate 110 above the driving and switching thin film transistor DTr (not shown). A drain contact hole 143 is formed in the passivation layer 140 to expose the drain electrode 136 of the driving TFT DTr.

The protective layer 140 having the drain contact hole 143 is in contact with the drain electrode 136 of the driving thin film transistor DTr through the drain contact hole 143, A first electrode 147 is formed.

The first electrode 147 has a bilayer structure, the upper layer 147b serves as an anode electrode, and the lower layer 147a serves as a reflector.

The upper layer 147b of the first electrode 147 may be formed of a transparent conductive material such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) having a relatively large work function value to serve as an anode electrode. And the lower layer 147a of the first electrode 147 is formed of a metal material having excellent reflection efficiency, for example, aluminum (Al) or silver (Ag) The light emitted from the organic light emitting layer 155 is reflected upward and recycled, thereby improving the luminous efficiency.

The organic electroluminescent device 101 according to the first embodiment of the present invention is a top emission type and light emitted from the organic light emitting layer 155 toward the first substrate 110 is substantially emitted by the user The first electrode 147 is formed to have a double layer structure including a lower layer 147a made of a metal material having a good reflection ability so as to improve the luminance characteristic and further simplify the manufacturing process by recycling such light because it does not feel and disappear. .

Next, the first electrode 147 having the bilayer structure is formed on the boundary of each pixel region P so as to surround each pixel region P, And a bank 150 having a height of about 1 to 10 mu m is formed.

At this time, the bank 150 may be formed of any one of general transparent organic insulating materials such as polyimide, photo acryl, and benzocyclobutene (BCB) For example, black resin.

The organic light emitting layer 155 is formed on the first electrode 147 in each pixel region surrounded by the bank 150 so as to emit red, .

At this time, the organic light emitting layer 155 may include red, green, blue, and white light, as well as a white light emitting material, in addition to the red, green, and blue light emitting materials described above.

In the drawing, for example, an organic light emitting layer 155 emitting red, green and blue light is formed.

A second electrode 158 is formed on the organic light emitting layer 155 to serve as a cathode electrode and maintain transparency over the entire display region. At this time, the first and second electrodes 147 and 158 and the organic light emitting layer 155 formed therebetween form an organic light emitting diode E.

Although not shown in the drawing, the light emitting efficiency of the organic light emitting layer 155 is improved between the first electrode 147 and the organic light emitting layer 155 and between the organic light emitting layer 155 and the second electrode 158, A first luminescence compensation layer (not shown) and a second luminescence compensation layer (not shown) having a multilayer structure may be further formed.

At this time, the first emission compensation layer (not shown) of a plurality of layers is sequentially stacked from the first electrode 147, and may be a hole injection layer and a hole transporting layer, The emission compensation layer (not shown) may be formed of an electron transporting layer and an electron injection layer from the organic light emitting layer 155.

The second electrode 158 formed on the organic light emitting layer 155 may be formed of a metal material having a relatively low work function value such as aluminum (Al), aluminum alloy (AlNd), silver (Ag ), Magnesium (Mg), gold (Au), and aluminum magnesium alloy (AlMg).

At this time, the organic electroluminescent device 101 according to the first embodiment of the present invention is driven by the top emission type, and the second electrode 158 has a thickness of 10 Å or more, which allows light to pass therethrough smoothly, And is about 200 ANGSTROM.

Meanwhile, when the second electrode 158 serving as the cathode electrode is formed to have a thickness of about 10 Å to about 200 Å in order to maintain the light-transmitting property on the characteristics of the organic light emitting device 101 of the upper emission type, The thickness of the organic light emitting layer 155 is different from that of the organic light emitting layer 155. Accordingly, the brightness of the light emitted from the organic light emitting layer 155 is different from that of the organic light emitting layer 155,

That is, since the second electrode 158 is formed on the entire surface of the display region and the signal voltage to the second electrode 158 is formed through the wiring provided in the non-display region outside the display region, A difference in voltage drop due to the difference in distance is generated based on the portion of the display area, and in particular, the voltage drop amount at the center portion and the magnetic field portion of the display region have a large difference, resulting in a luminance non-uniformity phenomenon.

Accordingly, as one of the most characteristic structures of the organic EL device 101 according to the first embodiment of the present invention for suppressing such a luminance unevenness phenomenon, an example of a metal material having a low resistance property is formed on the second electrode 158 (Au), copper (Cu), or aluminum alloy (AlNd), silver (Ag), gold (Au) (168) are formed in a lattice pattern with respect to the entire display area.

Further, the auxiliary wiring 168 is formed so as to overlap with the bank 150 formed in correspondence to the boundary of each pixel region P in a lattice shape.

At this time, the auxiliary wiring 168 has a width equal to or greater than the width of the gate wiring (not shown) and / or the data wiring 130 located under the bank 150, (1000 Å to 4000 Å) of the gate wiring (not shown) or the data wiring 130.

In the case where the auxiliary wiring 168 has a width and a thickness level similar to the gate wiring (not shown) or the data wiring 130 defining each pixel region P, the voltage drop amount by position in the entire display region by itself The voltage drop of the second electrode 158 which is in contact with the signal voltage applied to the second electrode 158 is hardly generated by the position of the auxiliary electrode 168. Therefore, The phenomenon can be suppressed.

The auxiliary wiring 168 having such a structure is not formed by patterning through the mask process, but is formed by selectively printing corresponding to the bank 150 formed with a large stepped portion compared with other regions through the roll printing apparatus And the formation of such an auxiliary wiring 168 will be described in detail through a later manufacturing method.

The first electrode, the organic light emitting layer 155, and the second electrode 158 sequentially formed on the first substrate 110 constitute an organic light emitting diode (E).

Meanwhile, a second substrate 170 for encapsulation is provided corresponding to the first substrate 110 of the organic electroluminescent device 101 according to the first embodiment of the present invention.

The first substrate 110 and the second substrate 170 are provided with an adhesive agent (not shown) made of a sealant or a frit along the edge thereof. The adhesive agent (not shown) 110 and the second substrate 170 are adhered to each other to maintain the panel state.

At this time, a vacuum state is formed between the first substrate 110 and the second substrate 170 which are spaced apart from each other, or an inert gas atmosphere may be obtained by being filled with an inert gas.

Meanwhile, the second substrate 170 for the encapsulation may be made of plastic having a flexible property, or may be made of a glass substrate.

Meanwhile, the organic electroluminescent device 101 according to the first embodiment may include a second substrate 170 for encapsulation, which is spaced apart from the first substrate 110 The second substrate 170 may be configured to contact the second electrode 158 provided on the uppermost layer of the first substrate 110 in the form of a film including an adhesive layer.

As another modification according to the first embodiment of the present invention, an organic insulating film (not shown) or an inorganic insulating film (not shown) may be further provided on the second electrode 158 to form a capping film, The organic insulating film (not shown) or the inorganic insulating film 162 may be used as an encapsulation film (not shown). In this case, the second substrate 170 may be omitted.

5, which is a plan view schematically showing a planar configuration of the organic EL device 101 according to the first embodiment of the present invention, the non-display area NA outside the display area AA The Vss wiring Vss provided in the first and second non-display areas NA1 and NA2 facing each other with the display area AA therebetween and the auxiliary wiring 168 connected to each other, The signal voltage applied from the printed circuit board 190 including the driving circuit portion is transmitted to the second electrode 158 formed on the entire surface of the display region through the auxiliary wiring 168 connected thereto through the Vss wiring Vss, .

At this time, the signal voltage applied to the Vss line Vss is not transmitted to the second electrode 158 formed on the entire surface of the display area AA using the second electrode 158 itself, and the internal resistance value per unit area Even if the second electrode 158 has a large area, the amount of voltage drop is different depending on the position, and the size of the signal voltage is different from that of the second electrode 158. Therefore, It can be seen that the luminance unevenness phenomenon can be suppressed for each position of the organic electroluminescent element 101 due to the variation.

That is, in the case of the organic EL device 101 according to the first embodiment of the present invention, since the signal voltage is transmitted through the auxiliary wiring 168 to the second electrode 158, The voltage is almost unchanged in size by the low internal resistance.

A signal contact having a substantially similar size can be applied to the edge portion of the display region AA or the central portion of the display region AA among the second electrodes 158 through the auxiliary wiring 168 .

Since the actual distance that the signal voltage moves through the second electrode 158 is the width of the pixel region P which is the spacing distance between the neighboring auxiliary wirings 168 without being affected by the position of the second electrode 158, The voltage drop caused by the large sheet resistance of the two electrodes 158 itself is hardly generated, so that the nonuniformity of the luminance according to the position of the second electrode 158 can be originally suppressed.

On the other hand, referring to FIG. 6 (a plan view schematically showing the configuration of a conventional organic electroluminescent device 101 without an auxiliary electrode as a comparative example) as a comparative example, In the case of the organic electroluminescent device 1 having the second electrode 58 having a thickness of about 200 Å, the signal voltage applied from the printed circuit board 90 including the driving circuit is transmitted through the Vss line Vss And is applied to the second electrode 58 connected in direct contact with the second electrode 58.

In this case, since the second electrode 58 is formed of a metal material having a relatively low work function value to have a thickness of about 10 to 200 angstroms in order to maintain transparency, the sheet resistance is relatively large.

The portion of the second electrode 58 adjacent to the Vss wiring Vss (the edge portion of the second electrode 58) and the portion of the second electrode 58 located the farthest from the Vss wiring Vss (Central portion of the second electrode 58), a voltage drop is generated in proportion to the moving distance of the signal voltage due to the large sheet resistance characteristic of the second electrode 58 itself.

In other words, since the distance that the signal voltage travels using the second electrode 58 has a difference of about 1/2 of the maximum display region width for each position, the voltage drop amount by the position of the second electrode 58 becomes large difference .

Therefore, the organic electroluminescent device 1 according to the comparative example having such a configuration has a display (hereinafter referred to as " display ") located relatively far from the edge portion of the display area AA adjacent to the Vss line Vss, It can be seen that the luminance unevenness is severely generated in the central portion of the area AA.

Hereinafter, a method of manufacturing the organic EL device 101 according to the first embodiment of the present invention will be described.

 FIGS. 7A to 7H are process diagrams illustrating the steps of manufacturing an organic electroluminescent device according to the first embodiment of the present invention. In this case, in the organic electroluminescent device 101 according to the first embodiment of the present invention and its modifications, a method of fabricating the organic electroluminescent device including the driving and switching thin film transistors, The method of forming the organic electroluminescent elements is not described in detail, and the steps for forming the organic electroluminescent elements are described in detail starting from the subsequent steps of forming the organic electroluminescent diodes .

First, as shown in Fig. 7A, a gate wiring (not shown) for defining a pixel region P intersecting each other on a transparent insulating substrate 101, for example, a substrate made of glass or plastic having a flexible property, and Data lines 130 and power supply lines (not shown) are formed, and switching and driving thin film transistors (not shown) are formed in the pixel regions P, respectively.

At this time, when the driving and switching thin film transistor DTr (not shown) forms a top gate structure as in the first embodiment of the present invention, the first region 113a of pure polysilicon and the impurity- A gate electrode 120 formed by overlapping the first region 113a with the semiconductor region 113 of polysilicon composed of the second region 113b of polysilicon, the gate insulating film 116, An interlayer insulating film 123 having a semiconductor layer contact hole 125 exposing the source and drain regions 113a and 113b and an interlayer insulating film 123 having a source and a drain contacted with the source and drain regions 113b through the semiconductor layer contact hole 125, The electrodes 133 and 136 are formed to have a laminated structure.

3, the gate electrode 215, the gate insulating film 218, the gate insulating film 218, the gate insulating film 218, A semiconductor layer 220 formed of an amorphous silicon amorphous silicon ohmic contact layer 220b and spaced apart from the active layer 220a of amorphous silicon and source and drain electrodes 233 and 236 spaced from each other may be formed The gate electrode 315, the gate insulating film 318, the oxide semiconductor layer 320, the etch stopper 322, and the etch stopper 322, as shown in Fig. And the source and drain electrodes 333 and 336, which are in contact with the oxide semiconductor layer 320, are stacked.

Referring again to FIG. 7A, a protective layer 140 (not shown) having drain contact holes 143 exposing the drain electrodes 136 of the driving thin film transistor DTr over the switching and driving thin film transistors (not shown) ).

Thereafter, a lower layer 147a made of aluminum (Al) or silver (Ag) having a plate shape and excellent in reflection efficiency, for example, for each pixel region P is formed on the protective layer 140, A first electrode 147 having a two-layer structure of an upper layer 147b made of indium-tin-oxide (ITO) which is a relatively high transparent conductive material is formed.

Next, as shown in FIG. 7B, on the first electrode 147, an organic material, preferably a polyimide having a photosensitive property and a hydrophobic property such as fluorine (F) It is preferable to coat a material mixed with any one or more of styrene, methyl mathacrylate and polytetrafluoroethylene to form an organic material layer having a thickness of several micrometers, more specifically about 1 to 10 micrometers, (Not shown).

At this time, since the organic material layer (not shown) has a photosensitive property, the organic material layer can be patterned by exposing itself, so that it is possible to omit a separate photoresist layer coating and etching process for patterning.

Thereafter, the organic material layer (not shown) is exposed by using an exposure mask, and a mask process including development of the organic material layer is performed to pattern the organic material layer, thereby forming a boundary of each pixel region P, The banks 150 overlap the data lines 130 and overlap the predetermined widths of the first electrodes 147 of the pixel regions P, respectively.

The bank 150 has a height of about 1 to 10 mu m from the protective layer 140 and has a lattice shape on the entire surface of the display region to expose a central portion of the first electrode 147 in each pixel region P It is characterized by the shape.

  Next, as shown in FIG. 7C, an inkjet apparatus 195 or a nozzle coating apparatus (not shown) is used corresponding to the first substrate 110 on which the bank 150 having the lattice form is formed in the display region An organic light emitting material layer (not shown) is formed on the first electrode 150 in each pixel region P by jetting or dropping a liquid organic light emitting material corresponding to a region surrounded by the bank 150 do.

At this time, since the bank 150 is made of an organic material having a hydrophobic property, in the step of injecting or dropping a liquid organic light emitting material, the liquid organic light emitting material is injected or dropped into each pixel region P The bank 150 has a hydrophobic property even if the ejection or dropping position is shifted due to a self-error of the inkjet apparatus 195 or the nozzle coating apparatus (not shown) and is dropped on the bank 150. Therefore, The organic light emitting material dropped on the bank 150 flows from the bank 150 into each pixel region P surrounded by the bank 150, thereby preventing defects due to injection and dropping.

In addition, even if the injection amount of the liquid organic light emitting material injected into each pixel region P is slightly larger, since the organic EL material tends to push out the organic light emitting material due to the hydrophobic property, It has advantages.

In this state, the curing organic light emitting layer 155 may be formed in each pixel region P by drying and curing the organic light emitting material layer (not shown) to remove the solvent.

Although only one organic light emitting layer 155 having a single layer structure is formed on the first electrode 150 in the drawing, the organic light emitting layer 155 may have multiple layers.

That is, in this case, the organic light emitting layer 155 having the multi-layer structure is formed by performing the same method of forming the organic light emitting layer 155 as the single layer, (Not shown), a hole injection layer (not shown), a hole transporting layer (not shown), an electron transporting layer (not shown) and an electron injection layer Or more can be selectively formed.

7D, a metal material having a relatively low work function value such as aluminum (Al), an aluminum alloy (AlNd), silver (Ag), magnesium (Mg), gold (Au) and an aluminum magnesium alloy (AlMg), and the second electrode 158 having a thickness of about 10 to 200 angstroms is formed on the entire surface of the display region by performing thermal deposition in a vacuum atmosphere.

In the case of the second electrode 158 formed by the thermal vapor deposition, the upper surface and the side surface of the bank 150 including the organic light emitting layer 155 are continuously connected to the entire display region.

At this time, the first electrode 150, the organic light emitting layer 155, and the second electrode 158, which are sequentially stacked in each pixel region P, form the organic electroluminescent diode E.

Next, as shown in FIGS. 7E and 8 (schematically showing a roll coating apparatus used for manufacturing an organic electroluminescent device according to the first embodiment of the present invention), a stage 410 on which a substrate is mounted, A printing roll 420 covered with a blanket 415 and an ink supply slit 430 supplying and coating a liquid conductive ink to the blanket 415 on the printing roll 420 The first substrate 110 on which the second electrode 158 is formed on the entire surface of the display region is placed on the stage 410 of the display panel 401.

Thereafter, a low-resistance conductive material such as aluminum (Al), an aluminum alloy (AlNd), silver (Ag), or the like is added to the blanket 415 formed at the outermost periphery of the printing roll 420 through the ink supply slit 425, A conductive ink containing a small amount of gold (Au), copper (Cu), or fine particles having a size on the order of several nanometers to several tens of nanometers, and a low- Resistance conductive ink is coated on the entire surface of the blanket 415 to a predetermined thickness to form the conductive ink layer 430. [

At this time, the conductive ink has a surface energy that is larger than the surface energy of the blanket 415 provided on the printing roll 420 and is smaller than the surface energy of the second electrode 158 provided on the first substrate 110 .

The blanket 415 is made of PDMS (polydimethylsiloxane). In this case, the surface energy of the blanket 415 is generally less than 20 mJ / m 2 on the material property of the PDMS, Since the second electrode 158 formed on the second electrode 158 is made of a metal material, the surface energy of the conductive ink is usually greater than 50 mJ / m < 2 >Lt; / RTI >

If the surface energy of the low-resistance conductive ink is smaller than the surface energy of the blanket 415 or is greater than the surface energy of the second electrode 158, the transfer characteristic of the conductive ink layer 430 is remarkably reduced, The transfer may not be performed smoothly from the blanket 415 to the surface of the second electrode 158 on the first substrate 110. In order to prevent this problem from occurring, / M < 2 > to about 50 mJ / m < 2 >.

Next, as shown in FIG. 7F, the printing roll 420 having the conductive ink layer 430 formed on the entire surface of the blanket 415 is brought into contact with one end of the first substrate 110 in one direction The conductive ink layer 430 on the blanket 415 is moved by moving the stage 410 on which the first substrate 110 is placed and rotating the printing roll 420 in accordance with the moving speed of the stage 410, Only the portion of the first substrate 110 that is in contact with the second electrode 158 overlapped with the bank 150 provided on the first substrate 110 is transferred onto the first substrate 110.

That is, since the adhesive force of the conductive ink layer 430 to the second electrode 158 is relatively increased due to the difference in surface energy between the blanket 415 and the second electrode 158, the surface of the blanket 415 And may be transferred to the surface of the second electrode 158 of the first substrate 110.

A part of the second electrode 158 formed on the first substrate 110 is overlapped with the bank 150 by the bank 150 formed at the lower part of the second electrode 158 to protrude from other areas to form a convex part, And the portion overlapping with the recess 155 constitutes a concave portion.

The conductive ink layer 430 formed on the surface of the blanket 415 may be selectively removed from the second electrode 158 formed on the first substrate 110 The conductive ink pattern 165 transferred onto the second electrode 158 on the first substrate 110 is transferred to only the portion overlapping with the conductive ink pattern 165, Are overlapped with each other only on the portion where the bank 150 is formed and are formed in the same planar shape, thereby forming a lattice shape in the display region.

The conductive ink pattern 165 in the form of a lattice by being transferred onto the first substrate 110 has the same width as that of the bank 150 so that the gate line (not shown) and / or the data line 130 ) Of the width of the protruding portion.

Next, as shown in FIG. 7G, the first substrate 110 on which the conductive ink pattern (165 of FIG. 7F) is formed is heat-treated with a curing means such as a funnel or an oven to form the conductive ink pattern The first substrate 110 according to the first embodiment of the present invention is completed by forming the auxiliary wiring 168 in the form of a lattice having a low resistance characteristic by removing the solvent in the first substrate 110 of FIG.

At this time, the auxiliary wiring 168 has a thickness of about 1000 to 4000 ANGSTROM, which is similar to the gate wiring (not shown) or the data wiring 130, so that the internal resistance per unit area is small, It is preferable that a voltage drop due to an internal resistance hardly occurs when a signal voltage is applied.

The auxiliary wiring 168 having such a thickness substantially has a voltage drop due to the internal resistance when the signal voltage is applied, but the voltage drop is several times higher than the second electrode 158 having a thickness of about 20 to 200 ANGSTROM The signal voltage applied through the auxiliary wiring 168 is negligibly small, so that the voltage drop is hardly generated through the auxiliary wiring 168.

Meanwhile, when the auxiliary wiring 168 is formed to overlap with the bank 150 through the roll coating apparatus described above, a mask process for additional patterning, that is, application of a photoresist, exposure using an exposure mask, Development of a photoresist, etching, stripping of a photoresist, and the like are not required, which is advantageous in realizing the effect of process simplification.

Next, as shown in FIG. 7H, a second substrate 170 made of a transparent insulating material for encapsulation of the organic light emitting diode (E) corresponding to the first substrate 110 is positioned to face the second substrate 170, A face seal (not shown) made of any one of frit, organic insulating material, and polymer material having a transparent and adhesive property is disposed between the first substrate 110 and the second substrate 170, The first substrate 110 and the second substrate 170 are attached to each other in a state of being coated on the front surface of the first substrate 110, or a seal pattern (not shown) is formed along the edge of the first substrate 110 in a vacuum or inert gas atmosphere, And then the first and second substrates 110 and 170 are bonded together to complete the organic light emitting device 101 according to the first embodiment of the present invention.

An inorganic insulating material or an organic insulating material is deposited or coated on the second electrode 158 of the first substrate 110 or an adhesive layer (not shown) is resumed to attach a film (not shown) When used as an encapsulation film (not shown), the second substrate 170 may be omitted.

9 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to a second embodiment of the present invention. For convenience of description, a region where a switching thin film transistor is to be formed in each pixel region is defined as a switching region, and a region where a driving thin film transistor is to be formed is defined as a driving region. A driving thin film transistor is formed for each pixel region, Only one pixel region is shown. The organic electroluminescent device according to the second embodiment of the present invention is different from the organic electroluminescent device according to the first embodiment only in the formation position of the auxiliary wiring, In this case, the same reference numerals are assigned to the same components as those of the first embodiment, and only reference numerals 400 are added to only the organic electroluminescent devices 400.

The organic electroluminescent device 501 according to the second embodiment of the present invention includes a driving and switching thin film transistor DTr (not shown), an organic electroluminescent diode E and a display area AA, A first substrate 110 having an auxiliary wiring 168 made of a metal material having a low resistance property and formed in a lattice shape along the boundary between the second electrode 158 of the first electrode 158 and the bank, And a second substrate 170 for protection and encapsulation of the organic electroluminescent diode E. At this time, the second substrate 170 may be replaced with an inorganic insulating film and / or an organic insulating film, or may be omitted by attaching a film.

First, the structure of the first substrate 110 including the driving and switching thin film transistor DTr (not shown), the organic light emitting diode E, and the auxiliary wiring 168 will be described.

On the first substrate 110, gates and data lines (not shown) 130 which define the pixel regions P intersect with each other, and wirings extending in parallel with any one of these two wirings (not shown) Power wiring (not shown) is formed.

In each pixel region P, a driving and switching thin film transistor DTr (not shown) is provided. The structure of the driving and switching thin film transistor (DTr) (not shown) has been described in the first embodiment and its modifications.

A drain contact hole 143 exposing the drain electrode 136 of the driving thin film transistor DTr corresponding to the front surface of the first substrate 110 is formed above the driving and switching thin film transistor DTr A protective layer 140 is formed.

The protective layer 140 having the drain contact hole 143 is in contact with the drain electrode 136 of the driving thin film transistor DTr through the drain contact hole 143, The upper layer 147b serves as an anode electrode and the lower layer 147a has a double-layered first electrode 147 serving as a reflection plate.

Next, the first electrode 147 having the bilayer structure is formed on the boundary of each pixel region P so as to surround each pixel region P, And a bank 150 is formed to expose a central portion of the bank 150.

In the organic electroluminescent device 501 according to the second embodiment of the present invention, aluminum (Al), an aluminum alloy (AlNd ), Silver (Ag), gold (Au), and copper (Cu) or an auxiliary wiring 168 made of two or more materials. The auxiliary wiring 168 is selectively formed only in correspondence with the bank 150, and is characterized by having a lattice shape in the display region.

In the case of the organic electroluminescent device 101 according to the first embodiment, the auxiliary wiring (168 in FIG. 2) is formed on the second electrode (158 in FIG. 2) The light emitting device 501 is located below the second electrode 158 because the light emitting device 501 is formed corresponding to the bank 150 prior to the formation of the second electrode 158.

At this time, the auxiliary wiring 168 has a width equal to or greater than the width of the gate wiring (not shown) and / or the data wiring 130 located under the bank 150, (1000 Å to 4000 Å) of the gate wiring (not shown) or the data wiring 130.

An organic light emitting layer 155 is formed on the first electrode 147 in each pixel region P surrounded by the bank 150.

The second electrode 158 is formed on the organic light emitting layer 155 and the auxiliary wiring 168 to serve as a cathode electrode on the entire surface of the display region and to maintain transparency. At this time, the first and second electrodes 147 and 158 and the organic light emitting layer 155 formed therebetween form an organic light emitting diode E.

In addition, a second substrate 170 for encapsulation is provided corresponding to the first substrate 110 of the organic electroluminescent device 501 according to the second embodiment of the present invention.

The second substrate 170 may further include an organic insulating film (not shown) or an inorganic insulating film (not shown) over the second electrode to form a capping film. The organic insulating film (not shown) or the inorganic insulating film 162 May be used as an encapsulation film (not shown) by itself, in which case the second substrate 170 may be omitted.

The organic electroluminescent device 501 according to the second embodiment of the present invention having such a configuration can also improve the luminance unevenness and improve the display quality as in the organic electroluminescent device 101 according to the first embodiment It is obvious that the present invention can realize the effect of improving the performance.

Hereinafter, a method of manufacturing the organic electroluminescent device 501 according to the second embodiment of the present invention will be briefly described. Since the manufacturing method of the organic electroluminescent device 501 according to the second embodiment is almost similar to that of the first embodiment, a description will be given mainly of a portion which is different from the second embodiment.

10A to 10E are cross-sectional views illustrating the steps of manufacturing an organic electroluminescent device according to a second embodiment of the present invention.

As shown in the drawing, a gate and a data line (not shown) 130, which define the pixel region P and intersect with each other on the first substrate 101 by going through the same method as the first embodiment, A power supply wiring (not shown) is formed extending in parallel with any one of the wirings (not shown), and a driving and switching thin film transistor DTr (not shown) is formed in each pixel region P.

A protective layer 140 is formed on the driving and switching thin film transistor DTr and a drain electrode 136 of the driving thin film transistor DTr is formed on the protective layer 140 in each pixel region P To form a first electrode 147 having a bilayer structure.

A bank 150 having a height of about 1 to 10 mu m is formed on the border of each pixel region P so as to overlap the edge portion of the first electrode 147 on the first electrode 147 .

Steps up to forming the bank 150 proceed in the same manner as in the first embodiment.

Next, as shown in FIG. 10B, the first substrate 110 with the bank 150 formed thereon is placed on the stage 410 of the roll coating apparatus 401 (FIG. 8), and the roll coating is performed The conductive ink pattern 165 is selectively formed only in correspondence with the bank 150 which forms a protruded portion compared to other regions.

At this time, the bank 150 is made of an organic material having a value larger than the surface energy of the conductive ink forming the conductive ink pattern 165, so that the conductive ink layer (not shown) formed on the surface of the blanket 415 of the printing roll 420 430 can be smoothly transferred onto the bank 150 on the first substrate 110.

 Then, as shown in FIG. 10C, the conductive ink pattern (not shown) formed on the bank 150 of the first substrate 110 is cured by heat treatment to form the auxiliary wiring 168. The auxiliary wiring 168 has a lattice shape in the display area.

The method of forming the auxiliary wiring 168 through the roll coating apparatus 401 (FIG. 8) is not limited to being formed on the second electrode (158 in FIG. 2) but on the bank 150 The method of forming the auxiliary wiring (168 of FIG. 2) through the roll coating apparatus (401 of FIG. 8) is the same as that of the first embodiment It has already been described in detail through an example, and the description thereof will be omitted below.

Next, as shown in FIG. 10D, the first substrate 110 provided with the auxiliary wiring 168 formed in a lattice form in the display region in direct contact with the bank 150 on the bank 150 (Not shown) in the pixel region P by jetting or dropping a liquid organic light emitting material in a region surrounded by the bank 150 using an inkjet apparatus 195 or a nozzle coating apparatus An organic light emitting material layer (not shown) is formed on the electrode 150, and the organic light emitting layer 155 is formed in each pixel region P by drying and curing the organic light emitting material layer to remove the solvent.

Next, as shown in FIG. 10E, a metal material having a relatively low work function value, such as aluminum (Al), aluminum (Al), or the like is formed on the first substrate 110 on which the auxiliary wiring line 168 and the organic light- The auxiliary wiring 168 is formed by mixing one or more of AlNd, Ag, Mg, Au and AlMg and performing thermal deposition in a vacuum atmosphere. And a second electrode 158 having a thickness of about 10 to 200 ANGSTROM is formed on the entire surface of the display region over the organic light emitting layer 155. [

10F, the second substrate 170 may be formed corresponding to the first substrate 110 formed on the second electrode 158 by performing the same method as described in the first embodiment, Or an encapsulation film is formed to complete the organic electroluminescent device 501 according to the second embodiment of the present invention.

In the case of the organic electroluminescent device manufactured by the manufacturing method according to the second embodiment of the present invention, in the same manner as the first embodiment, the organic electroluminescent device overlaps with the bank, Since the signal voltage applied to the second electrode by the wiring is moved in the second electrode along the auxiliary wiring, the voltage drop is suppressed for each position in the second electrode, thereby preventing the luminance non-uniformity phenomenon.

In addition, in the method of manufacturing an organic electroluminescent device according to the second embodiment, auxiliary wirings are formed through a roll coating apparatus after the formation of the organic light emitting layer after the formation of the banks, so that after the organic light emitting layer and the second electrode are formed, The second electrode and the organic light emitting layer due to the error of the first embodiment for forming the wiring are further suppressed.

That is, due to the characteristics of the roll coating apparatus, the first substrate and the roll are contacted with each other. At this time, physical force is applied to the first substrate. In the first embodiment, by the physical force applied by the roll coating apparatus, However, in the manufacturing method according to the second embodiment, the auxiliary wiring is preferentially formed on the bank in a state where only the bank is formed without forming the organic light emitting layer and the second electrode above the first electrode The organic light emitting layer and the second electrode are not damaged at all even if physical force is applied during the roll coating.

Therefore, the manufacturing method of the organic electroluminescent device according to the second embodiment is more advantageous in view of prevention of damage to the organic light emitting layer and the second electrode compared to the manufacturing method of the organic electroluminescent device according to the first embodiment.

The present invention is not limited to the above-described embodiments and modifications, and various modifications may be made without departing from the spirit of the present invention.

101: organic electroluminescent device 110: first substrate
113: semiconductor layer 113a: first region
113b: second region 116: gate insulating film
120: gate electrode (of the driving thin film transistor)
123: interlayer insulating film 125: semiconductor layer contact hole
133: source electrode (of the driving thin film transistor)
136: drain electrode (of the driving thin film transistor)
140: protective layer 143: drain contact hole
147: first electrode 147a: lower layer (of the first electrode)
147b: upper layer (of the first electrode) 150: bank
155: organic light emitting layer 158: second electrode
168: auxiliary wiring 170: second substrate
180: Protective film DTr: Driving thin film transistor
E: organic electroluminescent diode P: pixel region

Claims (15)

A first substrate on which a display region having a plurality of pixel regions is defined;
A first electrode formed on each of the pixel regions on the first substrate;
A bank formed in a shape that overlaps the edge of each first electrode in the display region and has a first height and surrounds each pixel region;
An organic light emitting layer formed on each of the first electrodes surrounded by the banks;
A second electrode formed on the entire upper surface of the organic light emitting layer and having a first thickness without interruption, and a portion corresponding to the bank protruded;
An auxiliary wiring layer having a second thickness and selectively formed in correspondence with a portion between the bank and the second electrode or over the second electrode by the bank,
And an organic electroluminescent device.
The method according to claim 1,
Wherein the first electrode has a double layer structure of a lower layer made of a reflective metal material and an upper layer made of a transparent conductive material.
The method according to claim 1,
The second electrode is made of a metal material having a work function smaller than that of the first electrode, such as aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg), gold (Au), aluminum magnesium alloy ) Or an organic electroluminescent device.
The method of claim 3,
Wherein the auxiliary wiring is made of any one material selected from the group consisting of aluminum (Al), aluminum alloy (AlNd), copper (Cu), gold (Au), and silver (Ag) device.
5. The method of claim 4,
Wherein the first height is 1 to 10 mu m, the first thickness is 10 to 200 ANGSTROM, and the second thickness is 1000 to 4000 ANGSTROM.
The method according to claim 1,
Wherein the auxiliary wiring extends to a non-display area outside the display area and is connected to a Vss wiring for application of a signal voltage.
The method according to claim 1,
The first electrode,
A gate and a data line crossing each other on the first substrate to define the pixel region;
A power supply wiring formed on the same layer on which the gate wiring or the data wiring is formed so as to be spaced apart from the wiring;
A switching thin film transistor provided in each pixel region and connected to the gate wiring and the data wiring; a driving thin film transistor connected to the power wiring and the switching thin film transistor;
A protective layer formed on the entire surface of the display region to cover the switching and driving thin film transistor and expose a drain electrode of the driving thin film transistor,
Wherein the first electrode is formed in contact with the drain electrode of the driving thin film transistor in the pixel region over the protective layer.
The method according to claim 1,
A second substrate facing the first substrate, or an encapsulation film serving as the second substrate in a form of contacting the auxiliary wiring and the second electrode and covering the entire surface of the display region The organic electroluminescent device comprising:
Forming a first electrode for each pixel region on a first substrate on which a display region having a plurality of pixel regions is defined;
Forming a bank having a first height and surrounding the edge of each first electrode in the display area and surrounding the pixel area;
Forming an organic light emitting layer on each of the first electrodes surrounded by the banks;
Forming a second electrode having a first thickness on the organic light emitting layer and formed on the entire surface of the display region without interruption and having a portion corresponding to the bank protruded;
Selectively forming an auxiliary wiring corresponding to a portion protruding from the bank having a second thickness over the second electrode,
Wherein the organic electroluminescent device comprises a first electrode and a second electrode.
10. The method of claim 9,
And selectively forming an auxiliary wiring corresponding to a portion of the second electrode having a second thickness above the second electrode and projecting due to the bank,
Placing a substrate on which the second electrode is formed on the stage of a roll coating apparatus composed of a printing roll having a stage and a blanket on the surface thereof and an ink supplying slit for supplying conductive ink to the printing roll;
Forming a conductive ink layer by coating a liquid conductive ink on the entire surface of the blanket;
And the conductive ink layer is brought into contact with the protruding portion of the second electrode by rotating the blanket in one direction in accordance with the advancing speed of the stage, To a protruding portion of the substrate;
Forming the auxiliary wiring by thermally treating and curing the conductive ink pattern transferred over the second electrode
Wherein the organic electroluminescent device comprises a first electrode and a second electrode.
Forming a first electrode for each pixel region on a first substrate on which a display region having a plurality of pixel regions is defined;
Forming a bank having a first height and surrounding the edge of each first electrode in the display area and surrounding the pixel area;
Forming an organic light emitting layer on each of the first electrodes surrounded by the banks;
Forming a second electrode on the entire surface of the display region,
And forming an auxiliary wiring having a second thickness selectively over the bank only before forming the organic light emitting layer.
12. The method of claim 11,
Forming an auxiliary wiring having a second thickness selectively on top of said bank only,
Placing a substrate on which the bank is formed on the stage of a roll coating apparatus comprising a stage and a printing roll having a blanket on the surface thereof and an ink supply slit for supplying conductive ink to the printing roll;
Forming a conductive ink layer by coating a liquid conductive ink on the entire surface of the blanket;
The conductive ink layer and the upper surface of the bank are brought into contact with each other by moving the stage in one direction and rotating the blanket in one direction in accordance with the advancing speed of the stage to move the conductive ink layer to the bank of the second substrate, Transferring the image to an upper surface;
Forming the auxiliary wiring by heat-treating and curing the conductive ink pattern transferred to the upper surface of the bank,
Wherein the organic electroluminescent device comprises a first electrode and a second electrode.
13. The method according to claim 10 or 12,
The conductive ink may include a plurality of conductive materials having a size of several to several tens of nanometers, made of any one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), gold (Au) A method for manufacturing an organic electroluminescent device comprising particles and a solvent.
The method according to claim 9 or 11,
Wherein the first height is 1 to 10 mu m, the first thickness is 10 to 200 ANGSTROM, and the second thickness is 1000 to 4000 ANGSTROM.
The method according to claim 9 or 11,
Before forming the first electrode,
A gate line and a data line which are formed in the same layer on which the gate line or the data line is formed; And a drain contact hole covering the switching and driving thin film transistor and exposing a drain electrode of the driving thin film transistor on the entire surface of the display region. The switching thin film transistor is connected to the switching thin film transistor, The method comprising the steps of:
Wherein the first electrode is formed in the pixel region so as to be in contact with the drain electrode of the driving thin film transistor through the drain contact hole over the protective layer.

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