KR102122401B1 - Organic electro luminescent device and method of fabricating the same - Google Patents

Abstract

The present invention includes a first substrate in which a display area having a plurality of pixel areas is defined; A first electrode formed for each pixel region on the first substrate; A first auxiliary wiring formed extending in a first direction to a boundary of the pixel region; A bank having a trench overlapping the edge of each first electrode in the display area and surrounding each pixel area, and having a trench exposing the first auxiliary wiring; An organic emission layer formed on each of the first electrodes surrounded by the bank; A second electrode formed over the organic emission layer and having a first thickness on the entire surface of the display area; A second substrate facing the first substrate; A protruding pattern extending in the first direction at a boundary of the pixel region on an inner surface of the second substrate and having a dam shape; A second auxiliary wiring formed corresponding to the bank on the inner surface of the protruding pattern and the second substrate, wherein the first and second auxiliary wirings and the second electrode are electrically connected to each other in the trench. It provides an organic electroluminescent device characterized in that it comprises and a manufacturing method thereof.

Description

Organic electroluminescent device and its manufacturing method{Organic electroluminescent device and method of fabricating the same}

The present invention relates to an organic electroluminescent device, and more particularly, to an organic electroluminescent device capable of improving the transmittance of the cathode electrode while maintaining low resistance characteristics in the structure of the top emission method and a method of manufacturing the same. .

An organic light emitting device, which is one of flat panel displays (FPDs), has high luminance and low operating voltage characteristics. In addition, because it is a self-emission type that emits light on its own, it has a large contrast ratio, and it is possible to implement an ultra-thin display, and it has a response time of several microseconds. , And is driven with a low voltage of 5 to 15 V DC, making it easy to manufacture and design a driving circuit.

In addition, the manufacturing process of the organic light emitting device is very simple since the deposition and encapsulation equipment can be said to be all.

Therefore, the organic light emitting device having the above-described advantages has been recently used in various IT devices such as TVs, monitors, and mobile phones.

Hereinafter, the basic structure of the organic light emitting device will be described in more detail.

The organic light emitting device is mainly composed of an array device and an organic light emitting diode. The array element is composed of a switching thin film transistor connected to a gate and a data line, a driving thin film transistor connected to the organic light emitting diode, and the organic light emitting diode comprises a first electrode and an organic light emitting layer and a second connected to the driving thin film transistor. It is made of electrodes.

In the organic light emitting device having such a configuration, light generated from the organic light emitting layer is emitted toward the first electrode or the second electrode to display an image. When considering the aperture ratio or the like, such an organic electroluminescent device is usually manufactured by an upper emission method in which an image is displayed using light emitted toward the second electrode.

However, due to the characteristics of the manufacturing of the organic light emitting device, the second electrode positioned on the organic light emitting layer cannot be formed by sputtering, which is a general metal material deposition method, to prevent damage to the organic light emitting layer. Therefore, the organic light emitting layer is hardly damaged. It is a situation that is formed by vacuum thermal vapor deposition which is not given.

On the other hand, the first electrode is made of indium-tin-oxide (ITO), a transparent conductive material having a high work function value to serve as an anode electrode, and the second electrode has a low work function value to serve as a cathode electrode. It is made of metal.

However, since the metal material having a low work function value constituting the second electrode serving as a cathode electrode has an opaque characteristic, when such an opaque metal is formed to have a thickness of a general electrode, that is, a thickness of 1000 mm to 4000 mm. Light cannot transmit.

Therefore, a second electrode made of an opaque metal material having a low work function value is formed to have a thickness of about 10 mm to 200 mm of the lower layer made of the opaque metal material to ensure transparency.

In this case, since the light transmittance of the second electrode is 15% or more, it is a luminance level of a general display device.

However, when the second electrode is formed to have a thickness of about 10 Å to 200 면, the sheet resistance becomes 20 Ω/□ to 1000 ,/□, and in this case, the surface resistance of the second electrode itself is high, so the voltage drop value for each location is different. As a result, luminance unevenness is finally generated, which causes a problem of deteriorating the display quality of the organic EL device.

In addition, the driving voltage of the organic light emitting device itself is relatively increased due to the high area term of the second electrode, and thus the power consumption per unit time is increased, which causes a rapid battery consumption, especially when applied to a personal portable IT device. Is the situation that is occurring.

The present invention has been devised to solve the above problems, and it is formed on the organic light emitting layer of the organic light emitting device of the upper emission method to lower the resistance of the second electrode serving as the cathode electrode and at the same time improve the transmittance of the organic An object of the present invention is to provide an electroluminescent device and a method for manufacturing the same.

An organic electroluminescent device according to an embodiment of the present invention for achieving the above object, a first substrate is defined a display area having a number of pixel areas; A first electrode formed for each pixel region on the first substrate; A first auxiliary wiring formed extending in a first direction to a boundary of the pixel region; A bank having a trench overlapping the edge of each first electrode in the display area and surrounding each pixel area, and having a trench exposing the first auxiliary wiring; An organic emission layer formed on each of the first electrodes surrounded by the bank; A second electrode formed over the organic emission layer and having a first thickness on the entire surface of the display area; A second substrate facing the first substrate; A protruding pattern extending in the first direction at a boundary of the pixel region on an inner surface of the second substrate and having a dam shape; A second auxiliary wiring formed corresponding to the bank on the inner surface of the protruding pattern and the second substrate, wherein the first and second auxiliary wirings and the second electrode are electrically connected to each other in the trench. It is characterized by achieving.

At this time, the protruding pattern is characterized in that it is inserted into the trench.

In addition, a first light-emitting auxiliary layer may be formed between the first electrode and the organic light-emitting layer, and a second light-emitting auxiliary layer may be formed between the organic light-emitting layer and the second electrode, wherein the first and second light-emitting layers are formed. The auxiliary layer is formed separately for each pixel region, and the first auxiliary wiring is in direct contact with the second electrode in the trench.

In addition, at least one layer of the first and second light-emitting auxiliary layers is formed on the front surface of the display area, and in this case, the second auxiliary wiring has an uneven structure on the surface corresponding to the upper portion of the protrusion pattern. , The concave-convex portion of the concavo-convex structure in the trench penetrates the second electrode and the first and second light-emitting auxiliary layers positioned below and contacts the surface of the first electrode, or the inside of the trench It is characterized in that a plurality of conductive balls in contact with the surfaces of the first auxiliary wiring and the second auxiliary wiring and penetrating the first electrode and the second light-emitting auxiliary layer positioned below the second electrode are provided.

Meanwhile, the first auxiliary wiring is made of the same material as the first electrode, and the second auxiliary wiring is a metal material having low resistance properties such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), and copper. Made of any one of alloy, gold (Au), silver (Ag), and the second electrode is aluminum (Al), aluminum alloy (AlNd), silver (Ag), which is a metal material having a relatively low work function value. It is made of any one or more materials of magnesium (Mg), gold (Au), aluminum magnesium alloy (AlMg), and the first thickness is characterized by being 10 to 200 mm 2.

Further, a gate and a data line below the first electrode and crossing each other on the first substrate to define the pixel area; A power wiring formed spaced apart from these wiring in parallel on the same layer on which the gate wiring or data wiring is formed; A switching thin film transistor provided in each pixel region and connected to the gate wiring and the data wiring, and a driving thin film transistor connected to the power supply wiring and the switching thin film transistor; And a protective layer formed by exposing the switching and driving thin film transistors on the front surface of the display area and exposing the drain electrode of the driving thin film transistor, wherein the first electrode is disposed in the pixel region over the protective layer in the pixel region. It is characterized by being formed in contact with the drain electrode.

In the method of manufacturing an organic light emitting device according to an embodiment of the present invention, a first electrode is formed for each pixel area on a first substrate on which a display area having a plurality of pixel areas is defined, and at the same time, a boundary of the pixel area Forming a first auxiliary wiring extending in a first direction in; Forming a bank having a trench overlapping the edge of each first electrode in the display area and surrounding each pixel area, and having a trench exposing the first auxiliary wiring; Forming an organic emission layer on each of the first electrodes surrounded by the bank; Forming a second electrode having a first thickness on the entire surface of the display area over the organic emission layer; Forming a protruding pattern having a dam shape extending in the first direction at a boundary of the pixel region on an inner surface of a second substrate facing the first substrate; Forming a second auxiliary wiring corresponding to the bank on the protruding pattern and the inner surface of the second substrate; And bonding the first substrate and the second substrate so that the second auxiliary wiring and the second electrode contact each other, wherein the first auxiliary wiring and the second electrode are electrically connected to each other in the trench. It is characterized by achieving.

At this time, the first and second substrates are bonded so that the protruding pattern is inserted into the trench.

In addition, a first light-emitting auxiliary layer is formed before the organic light-emitting layer is formed on the first electrode, and a second light-emitting auxiliary layer is formed before the second electrode is formed on the organic light-emitting layer.

In this case, the first and second light-emitting auxiliary layers are formed to be separated for each pixel region, and the first auxiliary wiring is formed to directly contact the second electrode in the trench.

In addition, at least one layer of the first and second light-emitting auxiliary layers may be formed on the entire surface of the display area. At this time, the portion corresponding to the upper portion of the protrusion pattern of the second auxiliary wiring has an uneven surface. Or to make the concave-convex portion of the concavo-convex structure penetrate the second electrode and the first and second light-emitting auxiliary layers positioned below it to contact the surface of the first electrode, or In the trench, a plurality of conductive balls in contact with the surfaces of the first auxiliary wiring and the second auxiliary wiring and penetrating the first electrode and the second light-emitting auxiliary layer positioned below the second electrode are provided. It is characteristic.

In this case, the plurality of conductive balls are formed by forming the second electrode and then jetting the second electrode inside the trench using an inkjet device, and the conductive ball joins when the first and second substrates are bonded together. It is characterized in that the conductive ball penetrates the second electrode and the first and second light-emitting auxiliary layers so as to contact the surfaces of the first auxiliary wiring and the second auxiliary wiring.

Meanwhile, the second auxiliary wiring is made of any one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, gold (Au), and silver (Ag), which are metal materials having low resistance properties. The second electrode is made of aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg), gold (Au), or aluminum magnesium alloy (AlMg), which are metal materials having relatively low work function values. It is made of any one or more materials, characterized in that the first thickness is 10 to 200 mm 2.

And before forming the first electrode, a gate and data wiring crossing each other on the first substrate to define the pixel region, a power wiring formed on the same layer on which the gate wiring or data wiring is formed, and each A driving thin film transistor provided in the pixel region, connected to the gate wiring and the data wiring, a driving thin film transistor connected to the power supply wiring and the switching thin film transistor, and the driving thin film covering the switching and driving thin film transistors in front of the display area And forming a protective layer having a drain contact hole exposing the drain electrode of the transistor, wherein the first electrode is a drain electrode of the driving thin film transistor through the drain contact hole in each pixel region over the protective layer. It is characterized in that it is formed to contact with.

The organic electroluminescent device according to the present invention is a low metal material having a relatively low work function value in the first substrate and has a thickness of about 10 mm 2 to about 200 mm 2 and forms a second electrode serving as a cathode electrode to ensure transparency. Further, the first auxiliary wiring is formed in a form overlapping the gate wiring with a low-resistance metal material in response to the display area, and the second auxiliary wiring in a lattice form is formed in correspondence with the boundary of each pixel area in the second substrate. , By forming a state in which the first and second auxiliary wirings are in contact with the second electrode, thereby reducing the resistance characteristic of the second electrode itself to suppress the voltage drop for each position and suppressing the luminance unevenness due to the voltage drop. It has the effect of improving quality.

1 is a circuit diagram of one pixel of a general organic light emitting device.
2 is a cross-sectional view of a portion of a display area of an organic light emitting device according to a first embodiment of the present invention.
3 is a schematic plan view of a portion of a display area of a first substrate in an organic light emitting diode according to a first embodiment of the present invention, showing only the bank and the first auxiliary wiring.
4 is a schematic plan view of a portion of the display area of the second substrate in the organic light emitting device according to the first embodiment of the present invention, showing only the protruding pattern and the second auxiliary wiring.
5 is a cross-sectional view of a portion cut along the cutting line VV of FIG. 3.
6 is a cross-sectional view of a portion cut along the cutting line VI-VI of FIG. 4;
7 is a cross-sectional view of a portion cut along the cutting line VV of FIG. 3 in the organic light emitting device according to the first embodiment of the present invention.
8 is a cross-sectional view showing a part of a display area of a second substrate including a characteristic configuration in an organic light emitting device according to a second embodiment of the present invention.
9 is a cross-sectional view of a portion including a characteristic configuration of an organic light emitting device according to a second embodiment of the present invention.
10 is a cross-sectional view of a portion of a display area of an organic light emitting device according to a third embodiment of the present invention.
11A to 11H are cross-sectional views of manufacturing steps for a portion of a display area of an organic light emitting diode according to a first embodiment of the present invention.
12A to 12B are cross-sectional views of manufacturing steps for a portion cut along the cutting line VV of FIG. 3 in the organic light emitting device according to the first embodiment of the present invention.
13A to 13D are cross-sectional views of a step-by-step manufacturing process of forming a second auxiliary wiring in the organic light emitting device according to the second embodiment of the present invention.
14A to 14B are process cross-sectional views of manufacturing steps of an organic light emitting device according to a third embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

First, the basic structure and operation characteristics of the organic light emitting device will be described in detail with reference to the drawings.

1 is a circuit diagram of one pixel area of a general organic light emitting device.

As illustrated, in the organic light emitting device, each pixel region P includes the gate wiring, data wiring, and power wiring, switching thin film transistor (STr), and driving thin film transistor (DTr), and storage capacitor. (StgC) and an organic light emitting diode (E).

When explaining the configuration of the organic light emitting device in more detail, a plurality of gate lines GL are formed spaced apart in the first direction, and a plurality of data lines DL are formed in a second direction intersecting the first direction. It is formed spaced apart from each other at regular intervals, and is spaced apart from each of the data lines DL to form a power supply line PL for applying a power supply voltage.

At this time, a region captured by the gate wiring GL and the data wiring DL is defined as a pixel region P.

Meanwhile, a switching thin film transistor STr is formed in a portion where each of the pixel regions P intersects with the data wiring DL and the gate wiring GL, and is electrically connected to the switching thin film transistor STr. A thin film transistor DTr is formed.

At this time, the first electrode, which is one terminal of the organic light emitting diode E, is connected to the drain electrode of the driving thin film transistor DTr, and the second electrode, which is the other terminal, is connected to the power supply wiring PL. Accordingly, the power supply wiring PL transmits a power supply voltage to the organic light emitting diode E.

In addition, a storage capacitor StgC is formed between the gate electrode and the source electrode of the driving thin film transistor DTr.

Therefore, when a signal is applied through the gate wiring GL, the switching thin film transistor STr is turned on, and the signal of the data wiring DL is transmitted to the gate electrode of the driving thin film transistor DTr, Since the driving thin film transistor DTr is turned on, light is output through the organic light emitting diode E.

At this time, when the driving thin film transistor DTr is turned on, the level of the current flowing from the power supply wiring PL to the organic light emitting diode E is determined, and thereby the organic light emitting diode E Will be able to implement a gray scale.

In addition, when the switching thin film transistor STr is turned off, the storage capacitor StgC serves to keep the gate voltage of the driving thin film transistor DTr constant, thereby turning off the switching thin film transistor STr. Even in the (off) state, it is possible to maintain a constant level of the current flowing through the organic light emitting diode E until the next frame.

Hereinafter, a configuration of an organic light emitting device according to an embodiment of the present invention for displaying an image by such driving will be described.

2 is a cross-sectional view of a portion of the display area of the organic light emitting device according to the first embodiment of the present invention, and FIG. 3 is a part of the display area of the first substrate in the organic light emitting device according to the first embodiment of the present invention Only the bank and the first auxiliary wiring are shown as a schematic plan view, and FIG. 4 is a schematic plan view of a portion of the display area of the second substrate in the organic light emitting diode according to the first embodiment of the present invention. Only the second auxiliary wiring is shown. FIG. 5 is a cross-sectional view of a portion cut along the cutting line VV of FIG. 3, and shows only the components on the top of the protective layer, and FIG. 6 is a cross-sectional view of the portion cut along the cutting line VI-VI of FIG. 4 It is a view showing only the components on the top of the protective layer, and FIG. 7 is a cross-sectional view of a portion cut along the cutting line VV of FIG. 3 in the organic light emitting device according to the first embodiment of the present invention. In this case, for convenience of description, a region in which the switching thin film transistor and the driving thin film transistor are to be formed in each pixel region P is defined as an element region TrA, and the driving thin film transistor DTr is formed for each pixel region P. However, only one pixel area P is shown in the drawing.

As illustrated, the organic light emitting device 101 according to the first embodiment of the present invention includes a driving and switching thin film transistor (DTr, not shown), an organic light emitting diode E, and a direction in which the gate wiring extends. In response to the boundary of each pixel region P, the first substrate 110 on which the first auxiliary wiring 148 made of a metal material having a low resistance property is formed and the boundary of each pixel region P have a grid shape. The second auxiliary wiring 175 is provided and is made by bonding the second substrates 170 for the protection and encapsulation of the organic light emitting diodes E facing each other.

First, the configuration of the first substrate 110 provided with the driving and switching thin film transistor (DTr, not shown) and the organic light emitting diode (E) will be described.

On the first substrate 110, pure polysilicon is formed in each pixel region P, and a central portion thereof is doped with impurities at a high concentration on both sides of the first region 113a where the channel is formed and both sides of the first region 113a. A semiconductor layer 113 composed of the second region 113b is formed.

A buffer layer (not shown) made of an inorganic insulating material, for example, silicon oxide (SiO ₂ ) or silicon nitride (SiNx), may be further formed between the semiconductor layer 113 and the first substrate 110.

The buffer layer (not shown) is to prevent degradation of characteristics of the semiconductor layer 113 due to the release of alkali ions from the inside of the first substrate 110 during crystallization of the semiconductor layer 113.

In addition, a gate insulating layer 116 is formed on the entire surface of the semiconductor layer 113, and a gate electrode corresponding to the first region 113a of the semiconductor layer 113 is formed on the gate insulating layer 116. 120) is formed.

In addition, the gate insulating layer 116 is connected to a gate electrode (not shown) of a switching thin film transistor (not shown) and extends in one direction to form a gate wiring (not shown). At this time, the gate electrode 120 (not shown) and the gate wiring (not shown) constituting the driving and switching thin film transistor (DTr, not shown) are metal materials having low resistance characteristics, such as aluminum (Al), aluminum alloy ( AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum alloy (MoTi) is made of any one or more materials to form a single-layer or multi-layer structure.

In addition, an interlayer insulating layer 123 is formed on the entire surface of the gate electrode 120 (not shown) and the gate wiring (not shown). At this time, the interlayer insulating layer 123 and the gate insulating layer 116 thereunder are formed with semiconductor layer contact holes 125 exposing each of the second regions 113b located on both sides of the first region 113a. .

Next, on the interlayer insulating layer 123 including the semiconductor layer contact hole 125, a data line 130 defining each pixel area P by crossing the gate line (not shown) is formed.

In addition, the driving region DA and the switching region (not shown) above the interlayer insulating layer 123 are spaced apart from each other and respectively contact the second region 113b exposed through the semiconductor layer contact hole 125 and source. And drain electrodes 133 and 136 are formed.

At this time, a semiconductor layer 113 including the source and drain electrodes 133 and 136 and a second region 113b in contact with these electrodes 133 and 136, and a gate formed on the semiconductor layer 113 The insulating film 116 and the gate electrode 120 form a driving thin film transistor DTr and a switching thin film transistor (not shown), respectively.

Source and drain electrodes 133 and 136 spaced apart from the data wiring 130 are also metal materials having low resistance properties, for example, aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum alloy (MoTi) is made of any one or more materials to form a single-layer or multi-layer structure.

Meanwhile, the switching thin film transistor (not shown) is electrically connected to the driving thin film transistor DTr and the gate wiring (not shown) and the data wiring 130, and the data wiring 130 is the switching thin film transistor ( It is connected to the source electrode (not shown) of the (not shown), the driving thin film transistor (DTr) is connected to the power supply wiring (not shown) and the organic light emitting diode (E).

In the organic light emitting device 101 according to the first embodiment of the present invention, the driving thin film transistor DTr and the switching thin film transistor (not shown) have a semiconductor layer 113 of polysilicon and a top gate type (Top gate) type), but the driving and switching thin film transistor DTr (not shown) is a bottom gate type having a semiconductor layer of amorphous silicon (220 in FIG. 3) or a semiconductor layer 320 of an oxide semiconductor material. (Bottom gate type).

When the driving and switching thin film transistor is composed of a bottom gate type, a gate electrode, a gate insulating film, a semiconductor layer made of an ohmic contact layer of impurity amorphous silicon, spaced apart from each other, and a source layer spaced apart from the active layer of pure amorphous silicon And a stacked structure of a drain electrode, or a stacked structure of a source electrode and a drain electrode spaced apart from each other on the gate electrode, the gate insulating film, the oxide semiconductor layer, the etch stopper, and the etch stopper, respectively. Have

In the case of the first substrate 110 on which the bottom gate type driving and switching thin film transistor (DTr, not shown) is formed, the gate wiring is formed to be connected to the gate electrode of the switching thin film transistor on the same layer on which the gate electrode is formed. The data wiring is configured to be connected to the source electrode on the same layer where the source electrode of the switching thin film transistor is formed.

On the other hand, referring to FIG. 2, although not shown in the drawing, power wiring (not shown) is formed on the same layer on which the gate wiring (not shown) is formed or on the same layer on which the data wiring 130 is formed. The wiring (not shown) is connected to one electrode of the driving thin film transistor DTr.

In addition, a protective layer 140 having a flattened surface is formed on the entire surface of the first substrate 110 over the driving and switching thin film transistor DTr (not shown). At this time, a drain contact hole 143 exposing the drain electrode 136 of the driving thin film transistor DTr is formed in the protective layer 140.

The drain contact hole 143 of the driving thin film transistor DTr and the drain contact hole 143 are contacted over the protective layer 140 provided with the drain contact hole 143, for each pixel region P The first electrode 147 is formed.

The first electrode 147 has a double layer structure, and the upper layer 147b serves as an anode electrode, and the lower layer 147a is formed to serve as a reflector.

That is, the upper layer 147b of the first electrode 147 is a transparent conductive material having a relatively high work function value to serve as an anode electrode, for example, indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) The lower layer 147a of the first electrode 147 is formed of a metal material having excellent reflection efficiency, for example, aluminum (Al) or silver (Ag), thereby being formed on the first electrode 147. The light emitted from the organic light emitting layer 155 is reflected to the upper portion and recycled, thereby improving light emission efficiency.

The organic light emitting device 101 according to the first embodiment of the present invention is an upper emission method, and light emitted from the organic light emitting layer 155 toward the first substrate 110 is substantially user-initiated. Since it does not feel and disappears, the first electrode 147 has a double layer structure including a lower layer 147a made of a metal material having excellent reflectivity so as to improve luminance characteristics and further simplify the manufacturing process by recycling such light. It is formed.

At this time, in the organic light emitting device 101 according to the first embodiment of the present invention, as one of the most characteristic configurations, the gate wiring (not shown) of the boundary of each pixel area P over the protective layer 140 The first auxiliary wiring 148 made of the same metal material forming the first electrode 110 is formed in correspondence to the portion where the switching and driving thin film transistor (not shown. DTr) is formed together with the portion where the hour) is formed.

The first auxiliary wiring 148 is formed to extend only in the first direction, such as the gate wiring (not shown), and is formed to be spaced apart from each other in the display area, but connected in a non-display area outside the display area. As a result, substantially all of the first substrate 110 is connected.

The first auxiliary wiring 148 is characterized in that it is formed to be spaced apart from the first electrode 147 formed in each of the pixel regions P. It is not necessary to form a double layer structure, and it is a single layer made of only a low-resistance metal material. Structures can also be achieved.

In the drawing, the first auxiliary wiring 148 is shown as an example of forming a double layer structure in the same manner as the first electrode 147.

Next, at the boundary of each pixel area P over the first electrode 147 and the first auxiliary wiring 148 having the double layer structure, the first electrode 147 is formed in a form surrounding each pixel area P. The bank 150 is formed by overlapping the edge portion and completely overlapping the first auxiliary wiring 148 and exposing the central portion of the first electrode 147.

The bank 150 may be made of any one of general transparent organic insulating materials such as polyimide, photo acryl, and benzocyclobutene (BCB), or a material that exhibits black, for example, black It may be made of resin.

The bank 150 forms a lattice shape that borders each pixel area P in the display area, and furthermore, the first auxiliary wiring (for the portion where the first auxiliary wiring 148 is formed in the bank 150) 148) is exposed and a trench is provided.

On the other hand, in each pixel area P surrounded by the bank 150, an organic emission layer 155 is formed on the first electrode 147, which emits any one of red, green, and blue colors. Is becoming.

In this case, the organic light emitting layer 155 may further include a light emitting material that emits white, green, and blue as well as the above-described light emitting materials that emit red, green, blue, and white.

In the drawing, for example, an organic light emitting layer 155 emitting red, green, and blue is formed.

A second electrode 158 is formed on the organic light emitting layer 155 to function as a cathode electrode and maintain transparency on the entire surface of the display area. At this time, the first and second electrodes 147 and 158 and the organic emission layer 155 formed therebetween form an organic light emitting diode E.

In addition, the second electrode 158 is configured to make contact with the first auxiliary wiring 148 exposed through the trench tch provided in the bank 150.

On the other hand, although not shown in the drawing, between the first electrode 147 and the organic light emitting layer 155 and between the organic light emitting layer 155 and the second electrode 158 to improve the light emission efficiency of the organic light emitting layer 155, respectively A first emission compensation layer (not shown) and a second emission compensation layer (not shown) having a multilayer structure may be further formed.

At this time, the multilayer first emission compensation layer (not shown) is sequentially stacked from the first electrode 147 and may be formed of a hole injection layer and a hole transporting layer. The emission compensation layer (not shown) is sequentially stacked from the organic emission layer 155 and may be formed of an electron transporting layer and an electron injection layer.

At this time, the first light-emitting compensation layer (not shown) and the second light-emitting compensation layer (not shown) are shown as an example of forming a double-layer structure, but it is not necessary to form a double-layer structure. That is, the first light emitting compensation layer (not shown) may be a hole injection layer or a hole transport layer to form a single layer structure, and the second light emitting compensation layer (not shown) may also be an electron injection layer or electron transport layer to form a single layer structure. You can also achieve

In addition, the first light emitting compensation layer (not shown) may further include an electron blocking layer, and the second light emitting compensation layer (not shown) may further include a hole blocking layer.

Meanwhile, the second electrode 158 formed on the organic emission layer 155 has a metal material having a relatively low work function value to act as a cathode electrode, for example, aluminum (Al), aluminum alloy (AlNd), silver (Ag) ), magnesium (Mg), gold (Au), or an aluminum magnesium alloy (AlMg).

At this time, the second electrode 158 has a thickness of 10 Å to maintain the transmittance by smoothly transmitting light due to the characteristics in which the organic light emitting device 101 according to the first embodiment of the present invention is driven by the top emission method. It is characterized by being about 200 km.

On the other hand, the second electrode 158 serving as a cathode electrode is formed to have a thickness of about 10 Å to 200 위해 to maintain light transmittance due to the characteristics of the organic light emitting device 101 of the top emission type, and serves as a general electrode. Since it does not have a sufficient thickness to do so, the surface resistance increases, and the voltage drop amount is different for each location, and finally, the luminance characteristics of the light emitted from the organic light emitting layer 155 are different, thereby causing luminance non-uniformity for each location.

That is, since the second electrode 158 is formed on the front surface of the display area and the signal voltage to the second electrode 158 is made through wiring provided in the non-display area outside the display area, the signal voltage is first applied. The difference in the voltage drop amount is generated by the distance difference based on the portion, and in particular, the luminance drop is caused by having a large difference in the amount of the voltage drop in the central portion and the magnetic field portion of the display area.

Therefore, in order to suppress the luminance non-uniformity phenomenon, the organic electroluminescent device 101 according to the first embodiment of the present invention is in contact with the second electrode 158, the first auxiliary wiring 148 made of a low-resistance metal material is further By being provided, it is possible to suppress the luminance unevenness caused by the large sheet resistance of the second electrode 158 itself.

Furthermore, in order to further suppress the luminance defect caused by the large surface resistance of the second electrode 158, the organic light emitting device according to the second embodiment of the present invention has a grid shape on the inner surface of the second substrate 170. Another feature is that the second auxiliary wiring 175 is further provided.

The configuration of the second substrate 170 having such a configuration will be described.

In the second substrate 170 of the organic light emitting device according to the first embodiment of the present invention, the inside of the trench (tch) corresponding to the trench (tch) provided in the bank 150 in the first substrate 110 A dam-shaped protruding pattern 173 is provided at a portion corresponding to the first auxiliary wiring 148 when positioned to face the first substrate 110 and having a width that can be inserted into.

The protruding pattern 173 has a bar shape extending in a first direction on the front surface of the display area, and is formed at regular intervals.

In addition, as another characteristic configuration, a low-resistance metal material such as aluminum (Al), aluminum alloy (AlNd), or copper (Cu) corresponding to the boundary of each pixel region P including the upper portion of the protruding pattern 173 , Copper alloy, gold (Au), a second auxiliary wiring 175 made of any one of silver (Ag) is provided.

The second auxiliary wiring 175 forms a lattice shape surrounding each pixel area P in response to the display area, and some of the second auxiliary wiring 175 is formed on the protruding pattern 173, A part is formed on the inner surface of the second substrate 170.

On the other hand, the first substrate 110 and the second substrate 170 having the above-described configuration is provided with an adhesive (not shown) made of a sealant or frit along its edges, and such an adhesive (not shown) By this, the first substrate 110 and the second substrate 170 are bonded to maintain the panel state.

In this case, the organic light emitting device 101 according to the first embodiment of the present invention is the second electrode 158 provided on the first substrate 110 and the second provided on the second substrate 170 Portions of the auxiliary wiring 175 formed corresponding to the protruding pattern 173 are in contact with each other in the trench tch of the bank 150 provided on the first substrate 110, and further, the second A portion of the auxiliary wiring 175 corresponding to the bank 150 provided on the first substrate 110 is in contact with each other with the second electrode 158 formed on the bank 150.

Due to this constitutional feature, the second electrode 158 provided on the first substrate 110 may have a bar shape on the first substrate 110 even though it has a thin thickness forming a general electrode for maintaining light transmittance. The surface resistance by contacting the first auxiliary wiring 148 formed in correspondence with the gate wiring (not shown) and the second auxiliary wiring 175 in a lattice shape provided on the inner surface of the second substrate 170 in line form, respectively The voltage drop in this large second electrode 158 can be suppressed.

Meanwhile, a vacuum state may be provided between the first substrate 110 and the second substrate 170 spaced apart from each other, or an inert gas atmosphere may be obtained by being filled with an inert gas.

Meanwhile, the second substrate 170 may be made of plastic having flexible properties, or may be made of a glass substrate.

The organic electroluminescent device 101 according to the first embodiment of the present invention having such a configuration, although not shown in the drawing, has a Vss wiring (not shown) in the first substrate 110 provided with a non-display area outside the display area City) and the first auxiliary wiring 148 are connected, and a signal voltage applied from a printed circuit board (not shown) including a gate and a data driving circuit (not shown) is connected to the Vss wiring (not shown). It is applied to the second electrode 158 formed on the entire surface of the display area by using the first auxiliary wiring 148 and the second auxiliary wiring 175 connected therewith as a medium.

At this time, the signal voltage applied to the Vss wiring (not shown) is not transmitted using the second electrode 158 itself to the second electrode 158 formed on the front surface of the display area, and the internal resistance value per unit area is It is transmitted to the second electrode 158 through the first and second auxiliary wirings 175, which are low and hardly generate a voltage drop.

Therefore, even if the second electrode 158 has a large area, it is possible to suppress the luminance non-uniformity phenomenon for each position of the organic light emitting diode 101 due to a difference in the magnitude of the signal voltage due to a different voltage drop amount for each position.

That is, in the case of the organic light emitting device 101 according to the first embodiment of the present invention, the signal voltage is transmitted to the second electrode 158 through the first and second auxiliary wirings 175, and the first And the signal voltage moved through the second auxiliary wiring 175 is hardly changed by the low internal resistance of the first and second auxiliary wirings 148 and 175.

Therefore, through the first and second auxiliary wirings 148 and 175, a signal pressure having a substantially similar magnitude is applied to an edge portion of the display region of the second electrode 158 or a portion located at the center of the display region. Can be.

In addition, the signal voltage is a substantial distance moving through the second electrode 158 of the pixel region P which is a separation distance between the first auxiliary wirings 148 adjacent to each other without a difference in each position of the second electrode 158. Since the width of the long axis is long, the voltage drop due to the large sheet resistance of the second electrode 158 itself hardly occurs. Therefore, the luminance non-uniformity phenomenon for each position of the second electrode 158 can be suppressed at the source.

Meanwhile, in the case of the organic light emitting device 101 according to the first embodiment of the present invention, the organic light emitting layer 155 or the organic light emitting layer 155 and the first and second light emission for each pixel region P through a shadow mask An example in which a compensation layer (not shown) is formed is shown, and the first and/or second light-emitting compensation layer (not shown) except the organic light-emitting layer 155 is provided with the second electrode 158. Similarly, it may be formed on the entire surface of the display area.

In this case, since the first and/or second emission compensation layer (not shown) is formed between the first auxiliary wiring 148 and the second electrode 158, the first auxiliary wiring 148 is substantially Since the second electrode 158 does not contact each other, the second electrode 158 does not form an energized state.

Therefore, to solve this problem, an organic electroluminescent device according to a second embodiment of the present invention is proposed.

8 is a cross-sectional view showing a part of a display area of a second substrate including a characteristic configuration in the organic light emitting device according to the second embodiment of the present invention, and FIG. 9 is an organic according to the second embodiment of the present invention It is a cross-sectional view of a part including a characteristic configuration of the electroluminescent element. At this time, the organic light emitting device 201 according to the second embodiment of the present invention differs from the first embodiment only in the parts shown in FIGS. 8 and 9, and all other components are the same. Only the configuration will be described. In this case, for convenience of description, only the hole transport layer 156c is formed on the front surface of the display area among the elements constituting the second light emission auxiliary layer 157b in the drawing, and the remaining first light emission auxiliary layer 157a and the second light emission As an example, the hole injection layer 156c of the auxiliary layer 157b is selectively formed for each pixel region P, but the first and second light-emitting auxiliary layers 157a and 157b are both display regions. It may be formed in units, or may be selectively formed in units of the display area or each pixel area (P) among the first and/or second light-emitting auxiliary layers 157a and 157b.

As shown in the drawing, the organic light emitting device 201 according to the second embodiment of the present invention has a flat second auxiliary wiring 175 located above the protruding pattern 173 in the second substrate 170. It is characterized by having irregularities, that is, irregularities, rather than shapes.

In the drawing, although the second auxiliary wiring 175 is completely deleted in a portion forming a recess on the upper portion of the protruding pattern 173 as an example, the surface of the protruding pattern 173 is exposed as an example. The second auxiliary wiring 175 made of the low-resistance metal material may be formed.

In the second auxiliary wiring 175, the portion positioned above the protruding pattern 173 to form an uneven shape as described above, is bonded to the second substrate 170 and the first substrate 110 When the concavo-convex portion of the second auxiliary wiring 175 is more precisely, the concave portion penetrates into the second electrode 158 and the hole transport layer 156c positioned below it to contact the first auxiliary wiring 148 It is to achieve.

In this way, when the iron portion of the second auxiliary wire 175 is in contact with the first auxiliary wire 148, the second electrode 158 is in a state of side contact with the iron portion of the second auxiliary wire 175, Furthermore, the iron portion of the second auxiliary wire 175 is in contact with the first auxiliary wire 148, so that the second electrode 158 naturally passes through the iron portion of the second auxiliary wire 175. 1 will be electrically connected to the auxiliary wiring (148).

Therefore, even if the first and/or second light-emitting auxiliary layers 157a and 157b are formed between the first auxiliary wiring 148 and the second electrode 158, the hole transport layer 156c is formed as one example. The first and second auxiliary wirings 148 and 175 are electrically connected to the second electrode 158, thereby suppressing luminance defects for each location of the second electrode 158.

10 is a cross-sectional view of a portion of a display area of an organic light emitting device according to a third embodiment of the present invention. At this time, in the organic electroluminescent device according to the third embodiment of the present invention, except for the configuration of the portion where the protruding pattern 173 of the second substrate 170 is formed, the organic according to the first embodiment of the present invention described above Since it has the same configuration as the electroluminescent element (101 in FIG. 2), only the characteristic configuration will be described.

In the organic light emitting device 3041 according to the third embodiment of the present invention, the first and second substrates 110 and 170 have the same configuration as the first embodiment.

At this time, a difference from the first embodiment is that a plurality of conductive balls 310 are provided in the portion where the trench tch of the first substrate 110 into which the protruding pattern 173 of the second substrate 170 is inserted is formed. Is being.

The organic light emitting device according to the third embodiment of the present invention is provided with a plurality of conductive balls 310 on the second electrode 158 inside the trench (tch) so that the first substrate 110 and the first 2 When the substrate 170 is bonded, the conductive ball 310 is the second electrode 158 and the first and/or second light-emitting auxiliary layers 157a and 157b positioned at the lower portion thereof, or any one example. The hole transport layer 156c is dug to form a state in contact with the first auxiliary wiring 148.

Therefore, the first auxiliary wiring 148 and the second auxiliary wiring 175 are electrically connected via the conductive ball 310, and the second electrode 158 is also connected to the conductive ball 310. Since the hole transport layer 156c is formed between the second electrode 158 and the first auxiliary wiring 148, the first and second auxiliary wirings 148 and 175 are not in contact with the second electrode. By forming a state in which the two electrodes 158 are electrically connected, it is possible to suppress luminance defects for each position of the second electrode 158.

Hereinafter, a method of manufacturing the organic light emitting device according to the first, second, and third embodiments of the present invention having the above-described configuration will be described. At this time, the method of manufacturing the organic light emitting device according to the first embodiment will be mainly described, and the method of manufacturing the organic light emitting device according to the second and third embodiments will be described only for parts different from the first embodiment. .

11A to 11H are cross-sectional views of manufacturing steps of a portion of the display area of the organic light emitting device according to the first embodiment of the present invention, and FIGS. 12A to 12B are organic light emitting devices according to the first embodiment of the present invention. 3 is a cross-sectional view of a manufacturing step for a portion cut along the cutting line VV of FIG. 3. At this time, in the organic light emitting device 101 according to the first embodiment of the present invention, the manufacturing method up to forming the driving and switching thin film transistor (DTr, not shown) is the same as the manufacturing method of the general organic light emitting device. The detailed description of the method of forming these components will be omitted, and only the subsequent steps, including the step of forming the protective layer 140, will be described in detail.

First, as illustrated in FIGS. 11A and 12A, a gate defining a pixel region P by crossing each other on a transparent first insulating substrate 110, for example, a glass material or a plastic material substrate having flexible characteristics. The wiring (not shown) and the data wiring 130 and the power supply wiring (not shown) are formed, and a switching and driving thin film transistor (not shown, DTr) is formed in each pixel region P.

At this time, when the driving and switching thin film transistor (DTr, not shown) forms a top gate structure as in the first embodiment of the present invention, impurities are doped in both sides of the first region 113a of pure polysilicon and both sides thereof. A semiconductor layer 113 of polysilicon made of a second region 113b of polysilicon, a gate insulating layer 116, a gate electrode 120 formed by overlapping the first region 113a, and the second region An interlayer insulating film 123 having a semiconductor layer contact hole 125 exposing (113b), and source and drain spaced apart from each other in contact with the source and drain regions 113b through the semiconductor layer contact hole 125, respectively. It is formed to have a stacked structure of electrodes 133 and 136.

In addition, although not shown in the drawings, when the driving and switching thin film transistors (DTr, not shown) form a bottom gate structure as in the modified example, the gate electrode, the gate insulating film, and the active layer of pure amorphous silicon are separated from each other. On the etch stopper, a semiconductor layer made of an ohmic contact layer of impurity amorphous silicon, and a stacked structure of source and drain electrodes spaced apart from each other, or formed on a gate electrode, a gate insulating film, an oxide semiconductor layer, an etch stopper, and the etch stopper It is formed to have a stacked structure of source and drain electrodes spaced from each other and in contact with the oxide semiconductor layer, respectively.

Next, the drain electrode 136 of the driving thin film transistor DTr is coated by applying an organic insulating material such as photoacrylic material on the switching and driving thin film transistor (not shown, DTr), and patterning the mask process. A drain contact hole 143 exposed to form a protective layer 140 having a flat surface.

Next, as illustrated in FIGS. 11B and 12B, a metal material having a plate shape for each pixel region P and having excellent reflection efficiency, for example, aluminum (Al) or silver (Ag), over the protective layer 140 A first electrode 147 having a double-layer structure of an upper layer 147b made of indium-tin-oxide (ITO), which is a transparent conductive material having a relatively high work function value and a lower layer 147a made of, forms the gate wiring A first auxiliary wiring 148 overlapping a part or all of the gate wiring (not shown) is formed in correspondence to an area where (not shown) is formed and an area where the driving and switching thin film transistors DTr (not shown) are formed.

In this case, the first auxiliary wiring 148 may have a double layer structure of the lower layer 148a and the upper layer 148b in the same manner as the first electrode 147, or the lower layer of the first electrode 147 ( 147a) may be formed of a single layer structure made of the same material.

When both the first electrode 147 and the first auxiliary wiring 148 form a double layer structure, the first metal layer (not shown) and the transparent conductivity are continuously deposited by successively depositing the metal material and the transparent conductive material having excellent reflection efficiency. After forming a material layer (not shown) and forming a first photoresist layer (not shown) thereon, diffraction or half using an exposure mask (not shown) having a transmissive area, a blocking area, and a semi-transmissive area By performing tone exposure, a first photoresist pattern (not shown) having a first thickness and a second photoresist pattern (not shown) having a second thickness thinner than the first thickness are formed, and the first and second By removing the transparent conductive material layer (not shown) and the first metal layer (not shown) exposed outside the photoresist pattern (not shown), the first electrode 147 and the first auxiliary wiring 148 both having a double layer structure are removed. To form.

Thereafter, ashing is performed to remove the second photoresist pattern (not shown) having the second thickness, and then the first auxiliary wiring 148 of the double layer structure exposed by removing the second photoresist pattern (not shown) 148 ) By forming the first auxiliary wiring 148 having a single-layer structure by removing the upper layer 148b, and then stripping and removing the first photoresist pattern (not shown) to remove the first layer 148b. 147 and a first auxiliary wiring 148 having a single layer structure may be formed.

When both the first electrode 147 and the first auxiliary wiring 148 form a double layer structure, it may be formed through a mask process using an exposure mask (not shown) having a general transmission area and a blocking area.

In the drawing, it is shown as an example that the first auxiliary wiring 148 forms a double layer structure.

Next, as illustrated in FIGS. 11C and 11C, an organic material, preferably a photosensitive material, and a polymer material having hydrophobic properties, for example, fluorine (F), over the first electrode 147 and the first auxiliary wiring 148 ) Contains polyimide, styrene, methyl mathacrylate, or polytetrafluoroethylene, or a mixture of two or more of them, coating a mixture of one or more μm to more precisely 1 An organic material layer (not shown) having a thickness of about 10 μm is formed.

At this time, since the organic material layer (not shown) has photosensitive characteristics, it is possible to pattern it by exposing itself, so that a separate photoresist layer coating and etching process can be omitted for patterning.

Subsequently, an exposure using an exposure mask for the organic material layer (not shown) and a mask process including the development of the organic material layer are performed and patterned to form a boundary between each pixel region P, that is, the gate wiring (not shown). And a data layer 130 overlapping a predetermined width with an edge portion of the first electrode 147 provided in each pixel area P, and further, a trench exposing it to the first auxiliary wiring 148 ( tch) to form a bank 150.

The bank 150 has a height of about 1 to 10 µm from the surface of the protective layer 140 and has a lattice shape on the front surface of the display area, so that the central portion of the first electrode 147 is located in each pixel area P. It is characterized in that it forms an exposing shape, and a trench (tch) exposing the first auxiliary wiring 148 is provided for a portion formed in a first direction, that is, a direction in which the gate wiring (not shown) is formed. to be.

Next, as illustrated in FIGS. 11D and 11D, an inkjet device (not shown) corresponding to the first substrate 110 on which the bank 150 having a lattice shape and having a trench in the display area is formed is formed. ) Or using a nozzle coating device (not shown) to spray or drop the liquid organic light-emitting material corresponding to the area surrounded by the bank 150, or each of the pixel areas P, more precisely the bank 150 An organic emission layer 155 is formed on the first electrode 147 in each pixel region P by performing thermal vapor deposition using a shadow mask (not shown) having an opening in the region surrounded by.

On the other hand, in the drawing, although only an organic light emitting layer 155 is formed on the first electrode 147 as an example, a first light emitting auxiliary layer (not shown) between the organic light emitting layer 155 and the first electrode 147 is shown. ) May be further formed, and a second emission auxiliary layer (not shown) may be further formed on the organic emission layer 155.

In this case, the first light-emitting auxiliary layer (not shown) may be any one or more of a hole injection layer (not shown), a hole transporting layer (not shown) and an electron blocking layer, The second light emitting auxiliary layer (not shown) may be any one or more of an electron transporting layer (not shown), an electron injection layer, and a hole blocking layer.

In addition, the first and second light-emitting auxiliary layers (not shown) may be formed separately for each pixel area P as in the organic light-emitting layer 155, or may be formed seamlessly in front of the display area.

Next, as illustrated in FIGS. 11E and 12E, a metal material having a relatively low work function value over the organic light emitting layer 155 or the second light emitting auxiliary layer (not shown), for example, aluminum (Al), aluminum alloy (AlNd) ), silver (Ag), magnesium (Mg), gold (Au), aluminum magnesium alloy (AlMg) or by mixing one or more of two or more by performing thermal vapor deposition in an atmosphere of vacuum to about 10 to 200 Å in front of the display area The first substrate 110 of the organic light emitting device according to the first embodiment of the present invention is completed by forming the second electrode 158 having a thickness of.

On the other hand, in the case of the second electrode 158 formed by such thermal evaporation, the top surface and side surfaces of the bank 150 including the organic emission layer 155 are formed to be continuously connected to the front surface of the display area. to be.

Accordingly, when the first and second light-emitting auxiliary layers (not shown) are missing or the first and second light-emitting auxiliary layers (not shown) are separately formed for each pixel area P, the second electrode 158 is formed. The first auxiliary wiring 148 exposed through the trench is formed.

In this case, when any one or more layers constituting it among the first and/or second light-emitting auxiliary layers (not shown) are formed in front of the display area, in the current state, the first and/or second light-emitting auxiliary layers ( (Not shown) is formed in a state in contact with the first auxiliary wiring 148 in the trench tch, and the second electrode 158 is the first and/or second light-emitting auxiliary layer (not shown) ) Although it is stacked on the top, in the case of such a configuration, the second electrode 158 and the first auxiliary wiring 148 are finally electrically connected by the manufacturing method according to the second embodiment of the present invention. It does not matter.

Meanwhile, the first electrode 147 sequentially stacked in each pixel area P, the organic light emitting layer 155 and the second electrode 158 form an organic light emitting diode E.

Next, as shown in FIGS. 11F and 12F, the bank 150 formed on the first substrate 110 on the transparent second insulating substrate 170, for example, a glass material or a plastic material substrate having flexible characteristics ), for example, an organic material, preferably a polymer material having a photosensitive property and a hydrophobic property, for example, polyimide, styrene, methyl masacrylate (methyl) containing fluorine (F) Math acrylate), polytetrafluoroethylene (polytetrafluoroethylene), or a mixture of two or more materials to form an organic material layer (not shown).

Thereafter, the organic material layer is patterned by performing a mask process to form a dam-shaped protruding pattern 173 extending in a first direction and spaced at a predetermined interval.

At this time, the protruding pattern 173 is formed to have a width smaller than the width of the trench tch so that it can be inserted into each trench tch in correspondence with the trench tch provided in the first substrate 110. It is characterized by.

Next, as shown in Figures 11g and 12g, a low-resistance metal material over the protruding pattern 173, for example, aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, gold (Au), By depositing any one of silver (Ag), and patterning it by performing a mask process, a grid shape that borders each pixel region P on the surface of the second insulating substrate 170 together with the protruding pattern 173 A second auxiliary wiring 175 is formed.

The second auxiliary wiring 175 overlaps the bank 150 formed on the first substrate 110 and has the same planar shape, and furthermore, the second auxiliary wiring 175 partially protrudes from the second auxiliary wiring 175. It is characterized in that it is located on the upper and side of the pattern 173, a part of which is located on the second substrate 170.

On the other hand, in the case of the organic light emitting device according to the first embodiment and the third embodiment (101 in FIG. 2, 301 in FIG. 10), the second auxiliary wiring 175 is connected to the front surface of the second substrate 170. Although the surface is formed smoothly, in the case of the organic light emitting device according to the second embodiment of the present invention (201 in FIG. 9), the portion formed on the upper surface of the protruding pattern 173 among the second auxiliary wirings 175 It is characterized by forming to form a rugged uneven structure.

Here, a method of forming the second auxiliary wiring 175, which is a configuration having a different point of the organic EL device (201 in FIG. 9) according to the second embodiment of the present invention, is shown in FIGS. 13A to 13D (in the second embodiment of the present invention) It will be described with reference to the step-by-step manufacturing process of forming the second auxiliary wiring 175 in the organic light emitting device according to.

First, as shown in FIG. 13A, a low-resistance metal material layer 174 is formed by depositing a low-resistance metal material on the second insulating substrate 110 on which the protruding pattern 173 is formed.

Subsequently, a photoresist is applied over the low-resistance metal material layer to form a second photoresist layer 181, and an exposure having a transmission area TA and a blocking area BA is formed over the second photoresist layer 181. After positioning the mask 190, the second photoresist layer 181 is exposed using the exposure mask.

At this time, for the portion of the low-resistance metal material layer 174 formed on the protruding pattern 173, the transmissive area TA and the blocking area BA are alternately formed in the exposure mask 190. .

On the other hand, in the drawing, it is shown as an example that the exposure mask 190 is formed such that the transmissive area TA and the blocking area BA are alternately positioned above the protruding pattern 173, as an example. Although not shown in the drawings, exposure may also be performed on the portion after placing an exposure mask having a configuration in which the transflective region and the transmissive region alternate.

Next, as shown in FIG. 13B, when developing is performed on the second photoresist layer (181 of FIG. 13A) subjected to exposure, all of the same first height is applied to the upper portion of the low-resistance metal material layer 174. A third photoresist pattern 182 is provided.

At this time, the third photoresist pattern 182 is formed in a number of spaced apart form having a predetermined width corresponding to the upper portion of the protruding pattern 173, the low resistance metal outside the third photoresist pattern 182 The material layer 174 forms an exposed state.

On the other hand, although not shown in the drawing, when the exposure is performed using an exposure mask having an alternating form of a transmissive region and a transmissive region with respect to the upper portion of the protruding pattern 173, when the second photoresist layer is developed, the projection A third photoresist pattern (not shown) having a first height and a fourth photoresist pattern having a second height smaller than the first height (not shown) on the upper portion of the low-resistance metal material layer corresponding to the pattern 173 Is formed alternately, the upper portion of the low-resistance metal material layer 174 formed on the second insulating substrate 170, that is, the second auxiliary wiring (175 in FIG. 13D) will be formed. A third photoresist pattern (not shown) having a height of 1 is formed.

Next, as shown in FIG. 13C, when the low-resistance metal material layer (174 in FIG. 13B) exposed outside the third photoresist pattern 182 is etched and removed, as shown in the figure, the protrusion The second auxiliary wiring having a smooth surface with respect to the side surface of the protruding pattern 173 and the second insulating substrate 170 at the same time, forming a concave-convex structure having a predetermined width and spaced apart from the upper part of the pattern 173 175) are formed.

Thereafter, as shown in FIG. 13D, the strip is processed to remove the third photoresist pattern (182 of FIG. 13C) to remove the organic electroluminescent device (201 of FIG. 9) according to the second embodiment of the present invention. 2 The substrate 170 can be completed.

On the other hand, although not shown in the drawings, when the third and fourth photoresist patterns having the first and second heights are formed, the low-resistance metal material layer exposed outside the third and fourth photoresist patterns is etched. By removing, the second auxiliary wiring has a smooth surface on the second substrate and the upper and side surfaces of the protruding pattern.

Thereafter, ashing is performed to remove the fourth photoresist pattern having the second height, thereby exposing a portion of the surface of the second auxiliary wiring positioned on the protruding pattern. In this case, on the second auxiliary wiring corresponding to the upper portion of the protruding pattern, the third photoresist pattern is spaced a predetermined width and is provided with a large number, and the second auxiliary wiring is exposed between the plurality of third photoresist patterns. State.

Subsequently, when etching is performed on the second auxiliary wiring exposed outside the third photoresist pattern, a second auxiliary wiring having a rugged uneven structure may be formed only corresponding to an upper portion of the protruding pattern.

At this time, the etching of the second auxiliary wiring exposed outside the third photoresist pattern proceeds for a shorter time than the etching time at which the second auxiliary wiring is completely removed. By proceeding so that the bay is reduced by a predetermined amount, a second auxiliary wiring constituting the concave-convex structure of the concave and convex portions can be formed without exposing the upper surface of the derivation pattern above the projecting pattern.

Meanwhile, as illustrated in FIGS. 11H and 12H, the trench tch and the protruding pattern 173 are positioned to face each other with the first substrate 110 and the second substrate 170 completed as described above. After forming, an adhesive (not shown) such as a seal pattern or a frit pattern is formed along the rim of the first substrate 110 or the second substrate 170, and then the first and The organic light emitting device 101 according to the first embodiment of the present invention is completed by bonding the second substrates 110 and 170.

At this time, the second electrode 158 and the second auxiliary wiring 175 are in contact with each other inside the trench tch by allowing the protruding pattern 173 to be inserted into the trench during the bonding process. It is characterized in that the second electrode 158 formed on the bank 150 and the second auxiliary wiring 175 formed on the second substrate 170 are in contact with each other.

The first auxiliary wiring 148, the second electrode 158, and the second auxiliary in the trench tch by the method of manufacturing the organic light emitting device 101 according to the first embodiment of the present invention described above. Since the wirings 175 come into contact with each other, an organic light emitting device capable of suppressing luminance non-uniformity defects due to the large sheet resistance of the second electrode 158 is provided.

On the other hand, in the case of the method of manufacturing the organic light emitting device according to the second embodiment of the present invention, referring to FIG. 9, the pressure applied during the bonding of the first substrate 110 and the second substrate 170 is The convex portion of the second auxiliary wiring 175 formed on the protruding pattern 173 is a component of the first and/or second light-emitting auxiliary layers 157a and 157b together with the second electrode 158. It is characterized in that the hole transport layer 156c is penetrated and finally, the end of the iron portion of the second auxiliary wiring 175 contacts the surface of the first auxiliary wiring 148.

Therefore, by the method of manufacturing the organic light emitting device 201 according to the second embodiment of the present invention, the first and/or between the second electrode 158 and the organic light emitting layer 155 in the trench (tch) ) Although the second light-emitting auxiliary layers 157a and 157b are further provided, it is characterized in that the first auxiliary wiring 148 and the second electrode 158 and the second auxiliary wiring 175 are electrically connected.

Meanwhile, a method of manufacturing an organic light emitting device (301 of FIG. 10) according to a third embodiment of the present invention, referring to FIG. 10, to complete the first substrate 110 and the second substrate 170, respectively The steps are the same as in the first embodiment, and it is characterized in that one step is additionally performed before the step of bonding the first substrate 110 and the second substrate 170.

That is, referring to FIGS. 14A to 14B, which are process sectional views of a manufacturing step of an organic light emitting device according to a third embodiment of the present invention, the trench (tch) on the first substrate 110 completed using the ink jet device 195 ) The conductive ball layer is formed by spraying a plurality of conductive balls 310 on the second electrode 158 inside.

At this time, through the inkjet device, the conductive ball 310 and the volatile solvent are selectively sprayed with ink, and after spraying the ink in which the conductive ball 310 is mixed, the solvent is volatilized to volatilize the second inside the trench. Only the conductive ball 310 remains on the electrode 158.

Subsequently, as described above, after facing the second substrate 170 with respect to the first substrate 110 in a state where a conductive ball layer is formed in the trench (tch), the organic electroluminescent device according to the second embodiment ( The organic electroluminescent device 301 according to the third embodiment of the present invention can be completed by performing the bonding mentioned in the manufacturing method of 201) of FIG. 9.

In the method of manufacturing the organic light emitting device 301 according to the third embodiment of the present invention, the conductive ball 310 is the pressure due to the pressure applied when the first and second substrates 110 and 170 are bonded. The second electrode 158 along with the hole transport layer 156c, which is a component of the first and/or second light-emitting auxiliary layers 157a and 157b, is finally drilled and finally the surface of the first auxiliary wiring 148 It is characterized by making it come into contact with.

Therefore, the first and/or between the second electrode 158 and the organic light emitting layer 155 in the trench tch may also be produced by the method of manufacturing the organic light emitting device 301 according to the third embodiment of the present invention. Although the second light emitting auxiliary layers 157a and 157b are further provided, the first auxiliary wiring 148 and the second electrode 158 and the second auxiliary wiring 175 are electrically connected through the conductive ball 310. It is characterized by forming a connected configuration.

The present invention is not limited to the above-described embodiments and modifications, and can be implemented by variously changing within the limits without departing from the spirit of the present invention.

101: organic light emitting device
110: first substrate
140: protective layer
147: first electrode
147a, 147b: lower and upper layers (of the first electrode)
148: 1st auxiliary wiring
150: bank
155: organic light emitting layer
158: second electrode
170: second substrate
173: protrusion pattern
175: second auxiliary wiring
E: organic light emitting diode
P: Pixel area

Claims (19)

A first substrate on which a display area having a plurality of pixel areas is defined;
A first electrode formed for each pixel region on the first substrate;
A first auxiliary wiring disposed at a boundary of the pixel area and extending in a first direction;
A bank disposed in the display area, overlapping an edge of each of the first electrodes, surrounding each pixel area, and having a trench exposing the first auxiliary wiring;
An organic emission layer formed on each of the first electrodes surrounded by the banks;
A second electrode disposed on the entire surface of the display area including the upper portion of the organic emission layer and having a first thickness;
A second substrate facing the first substrate;
A protruding pattern extending in the first direction to a boundary of the pixel region on the inner surface of the second substrate;
A second auxiliary wiring formed corresponding to the bank on the protruding pattern and the inner surface of the second substrate,
The first and second auxiliary wirings and the second electrode are electrically connected to each other in the trench, and the second auxiliary wiring extends to the side of the protruding pattern and the second substrate so that the second auxiliary wiring is the bank of the bank. An organic electroluminescent device characterized in that it is electrically connected to the second electrode from the side surface and the top surface.
According to claim 1,
The protrusion pattern is an organic electroluminescent device characterized in that it is inserted into the trench.
According to claim 1,
An organic electroluminescent device characterized in that a first light-emitting auxiliary layer is formed between the first electrode and the organic light-emitting layer, and a second light-emitting auxiliary layer is formed between the organic light-emitting layer and the second electrode.
The method of claim 3,
The first and second light-emitting auxiliary layers are formed separately for each pixel area, and the first auxiliary wiring in the trench directly contacts the second electrode.
The method of claim 3,
At least one of the first and second light-emitting auxiliary layers is formed on the entire surface of the display area,
In the second auxiliary wiring, a portion corresponding to the upper portion of the protruding pattern has a concavo-convex structure, and the first and second light emitting portions in which the concave-convex portion of the concavo-convex structure is located at the bottom of the second electrode and the inside of the trench An organic electroluminescent device characterized in that it penetrates through the auxiliary layer and contacts the surface of the first auxiliary wiring.
The method of claim 3,
At least one of the first and second light-emitting auxiliary layers is formed on the entire surface of the display area,
The trench is provided with a plurality of conductive balls penetrating the first and second auxiliary wirings through the first and second light-emitting auxiliary layers positioned under the second electrode and the second electrode. EL device.
According to claim 1,
The first auxiliary wiring is made of the same material as the first electrode,
The second auxiliary wiring is made of any one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, gold (Au), and silver (Ag), which are metal materials having low resistance properties. Characteristic organic electroluminescent device.
According to claim 1,
The second electrode may be any one of aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg), gold (Au), and aluminum magnesium alloy (AlMg), which are metal materials having a relatively low work function value, or Made of two or more substances,
The first thickness of the organic electroluminescent device is characterized in that 10 to 200Å.
According to claim 1,
Gate and data wirings disposed on the first substrate to cross each other to define the pixel region;
A power wiring formed spaced apart from these wiring in parallel on the same layer on which the gate wiring or data wiring is formed;
A switching thin film transistor provided in each pixel region and connected to the gate wiring and the data wiring, and a driving thin film transistor connected to the power supply wiring and the switching thin film transistor;
A protective layer formed by covering the switching and driving thin film transistors on the front surface of the display area and exposing the drain electrode of the driving thin film transistor.
Including, wherein the first electrode is formed in contact with the drain electrode of the driving thin film transistor in each pixel region over the protective layer, characterized in that the organic electroluminescent device.
Forming a first electrode for each pixel region on a first substrate on which a display region having a plurality of pixel regions is defined, and forming a first auxiliary wiring extending in a first direction at a boundary of the pixel region;
Forming a bank having a trench overlapping the edge of each first electrode in the display area, surrounding each pixel area, and exposing the first auxiliary wiring;
Forming an organic emission layer on each of the first electrodes surrounded by the bank;
Forming a second electrode having a first thickness on the entire surface of the display area over the organic emission layer;
Forming a protruding pattern extending in the first direction at a boundary of the pixel area on the inner surface of the second substrate;
Forming a second auxiliary wiring corresponding to the bank on the protruding pattern and the inner surface of the second substrate;
And bonding the first substrate and the second substrate such that the second auxiliary wiring contacts the second electrode.
In the trench, the first auxiliary wiring and the second electrode are electrically connected to each other, and the second auxiliary wiring extends to the side of the protruding pattern and the second substrate so that the second auxiliary wiring is in contact with the side of the bank. A method of manufacturing an organic light emitting device, characterized in that it is electrically connected to the second electrode from the top surface.
The method of claim 10,
A method of manufacturing an organic light emitting device, characterized in that the first and second substrates are bonded so that the protruding pattern is inserted into the trench.
The method of claim 10,
Manufacture of an organic light emitting device characterized in that a first light emitting auxiliary layer is formed before the organic light emitting layer is formed on the first electrode, and a second light emitting auxiliary layer is formed before the second electrode is formed on the organic light emitting layer. Way.
The method of claim 12,
The first and second light-emitting auxiliary layers are formed to be separated for each pixel area, so that the first auxiliary wiring is formed in direct contact with the second electrode in the trench.
The method of claim 12,
At least one of the first and second light-emitting auxiliary layers is formed on the entire surface of the display area,
The portion corresponding to the upper portion of the protruding pattern of the second auxiliary wiring is formed such that its surface forms an uneven structure, and the first and first portions of the uneven structure in the trench are located at the second electrode and the lower portion thereof. 2 A method of manufacturing an organic light emitting device, characterized in that it penetrates through the light-emitting auxiliary layer and makes contact with the surface of the first auxiliary wiring.
The method of claim 12,
At least one of the first and second light-emitting auxiliary layers is formed on the entire surface of the display area,
The inside of the trench is characterized in that a plurality of conductive balls penetrating the first and second auxiliary wirings through the first and second light-emitting auxiliary layers positioned under the second electrode and the second electrode are provided. Method of manufacturing an organic light emitting device.
The method of claim 15,
The plurality of conductive balls are formed by jetting over the second electrode in the trench using an inkjet device after forming the second electrode,
When the first and second substrates are bonded, the conductive balls are joined so that the conductive balls penetrate the second electrode and the first and second light-emitting auxiliary layers, and the surfaces of the first and second auxiliary wirings Method of manufacturing an organic light emitting device, characterized in that to be in contact with.
The method of claim 10,
The second auxiliary wiring is made of any one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, gold (Au), and silver (Ag), which are metal materials having low resistance properties. ,
The second electrode may be any one of aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg), gold (Au), and aluminum magnesium alloy (AlMg), which are metal materials having a relatively low work function value, or Made of two or more substances,
The first thickness is a method of manufacturing an organic electroluminescent device characterized in that 10 to 200 Å.
The method of claim 10,
Before forming the first electrode,
A gate and data wiring crossing each other on the first substrate to define the pixel region, a power supply wiring formed on the same layer on which the gate wiring or data wiring is formed, and provided in each pixel region, wherein the gate wiring and data A switching thin film transistor connected to a wiring, a driving thin film transistor connected to the power wiring and the switching thin film transistor, and a drain contact hole covering the switching and driving thin film transistor in front of the display area and exposing the drain electrode of the driving thin film transistor. Further comprising the step of forming a protective layer having,
The first electrode is formed on the passivation layer to contact the drain electrode of the driving thin film transistor through the drain contact hole in each pixel region.

The organic electroluminescent device according to claim 1, wherein the protrusion pattern is formed to correspond to the shape of the trench of the bank.

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