KR20150042985A - Organic electro luminescent device and method of fabricating the same - Google Patents

Abstract

Provided in the present invention are a first substrate having a display area with multiple pixel areas defined; a first electrode formed on each pixel area on the first substrate; a first sub wiring extended on a boundary of the pixel areas in the first direction; a bank formed in a shape of being overlapped with the edge of each first electrode on the display area, and surrounding each pixel area, and including a trench exposing the first sub wiring; an organic light emitting layer formed on the upper part of each first electrode surrounded by the bank; a second electrode formed on the front surface of the display area on the to have a first thickness on the upper part of the organic light emitting layer; a second substrate facing the first substrate; a protruding pattern extended on the boundary of the pixel area on the inner surface of the second substrate in the first direction, and having a dam shape; and a second sub wiring formed to correspond to the bank on the upper part of the protruding pattern and the inner surface of the second substrate, wherein the first and second sub wirings and the second electrode are characterized by being electrically connected to each other inside the trench, and a method of fabricating the same.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device and a method of fabricating the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device, and more particularly, to an organic electroluminescent device capable of improving the transmittance of a cathode electrode while maintaining a low resistance characteristic in a structure of a top emission type, and a method of manufacturing the same. .

An organic electroluminescent device, which is one of flat panel displays (FPDs), has high luminance and low operating voltage characteristics. In addition, since it is a self-luminous type that emits light by itself, it has a large contrast ratio, can realize an ultra-thin display, can realize a moving image with a response time of several microseconds (μs), has no viewing angle limit, And it is driven with a low voltage of 5 to 15 V direct current, so that it is easy to manufacture and design a driving circuit.

In addition, since the manufacturing process of the organic electroluminescent device is all the deposition and encapsulation equipment, the manufacturing process is very simple.

Accordingly, the organic electroluminescent device having the above-described advantages has recently been used in various IT devices such as a TV, a monitor, and a mobile phone.

Hereinafter, the basic structure of the organic electroluminescent device will be described in more detail.

BACKGROUND ART An organic electroluminescent device is largely composed of an array element and an organic electroluminescent diode. The array element includes a switching thin film transistor connected to a gate and a data line, and a driving thin film transistor connected to the organic light emitting diode. The organic light emitting diode includes a first electrode connected to the driving thin film transistor, Electrode.

In the organic electroluminescent device having such a configuration, light emitted from the organic light emitting layer is emitted toward the first electrode or the second electrode to display an image. Such an organic electroluminescent device is generally manufactured by a top emission type in which an image is displayed using light emitted toward the second electrode in consideration of an aperture ratio and the like.

However, due to the manufacturing characteristics of the organic electroluminescent device, the second electrode located above the organic luminescent layer can not be formed by sputtering, which is a general metal material evaporation method, to prevent damage to the organic luminescent layer, Which is formed by vacuum thermal evaporation which does not give a high temperature.

The first electrode is made of indium-tin-oxide (ITO), which is a transparent conductive material having a high work function value, to serve as an anode electrode. The second electrode has a low work function value And is made of a metal material.

However, since the metal material having a low work function value constituting the second electrode serving as the cathode electrode has opaque characteristics, if the opaque metal is formed to have a thickness of about 1000 to 4000 ANGSTROM Light can not penetrate.

Therefore, the second electrode made of an opaque metal material having a low work function value is formed to have a thickness of about 10 Å to about 200 Å to form a lower layer made of an opaque metal material in order to ensure transparency.

In this case, since the light transmittance of the second electrode is 15% or more, the brightness level of a general display device is obtained.

However, when the second electrode is formed to have a thickness of about 10 to 200 angstroms, the sheet resistance is 20? /? To 1000? / ?. In this case, the surface resistance of the second electrode itself is high, There is a problem that the display quality of the organic electroluminescent device is deteriorated because the luminance unevenness eventually occurs.

In addition, since the driving voltage of the organic electroluminescence device itself is relatively increased due to the high area term of the second electrode, the power consumption per unit time is increased, thereby causing a problem of causing rapid battery consumption And the like.

SUMMARY OF THE INVENTION The present invention has been conceived to solve the problems described above, and it is an object of the present invention to provide an organic electroluminescent device of the upper emission type, which is formed on the organic light emitting layer, And an object of the present invention is to provide an electroluminescent device and a manufacturing method thereof.

According to an aspect of the present invention, there is provided an organic electroluminescent device including a first substrate on which a display region having a number of pixel regions is defined; A first electrode formed on each of the pixel regions on the first substrate; A first auxiliary wiring formed in a boundary of the pixel region in a first direction; A bank formed in the display region so as to overlap the edges of the first electrodes and surrounding the pixel regions, the trenches exposing the first sub-lines; An organic light emitting layer formed on each of the first electrodes surrounded by the banks; A second electrode formed on the entire surface of the organic emission layer and having a first thickness; A second substrate facing the first substrate; A protruding pattern extending in the first direction on a boundary of the pixel region on the inner surface of the second substrate and having a dam shape; And a second auxiliary wiring formed on the protruding pattern and on the inner surface of the second substrate to correspond to the bank, wherein the first and second auxiliary wiring and the second electrode are electrically connected to each other within the trench .

At this time, the protruding pattern is inserted into the trench.

A first light emitting auxiliary layer may be formed between the first electrode and the organic light emitting layer and a second light emitting auxiliary layer may be formed between the organic light emitting layer and the second electrode. The auxiliary layer is formed separately for each pixel region, and the first auxiliary wiring directly contacts the second electrode in the trench.

At least one of the first and second light-emission-assisting layers may be formed on the entire surface of the display region, and the portion of the second auxiliary wiring corresponding to the upper portion of the protrusion pattern may have a concavo- , The convex portion of the concave-convex structure inside the trench penetrates through the second electrode and the first and second light-emission-assisting layers located under the second electrode, and contacts the surface of the first electrode, A plurality of conductive balls contacting the surfaces of the first auxiliary wiring and the second auxiliary wiring and passing through the second electrode and the first and second light emission auxiliary layers disposed under the second electrode are provided.

The first auxiliary wiring is made of the same material as the first electrode, and the second auxiliary wiring is made of a metal material having low resistance characteristics such as aluminum (Al), aluminum alloy (AlNd), copper (Cu) Wherein the second electrode is made of a material selected from the group consisting of aluminum (Al), an aluminum alloy (AlNd), silver (Ag), and a metal having relatively low work function, (Mg), gold (Au), aluminum magnesium alloy (AlMg), and the first thickness is 10 to 200 Å.

A gate and a data line crossing each other on the first substrate to define the pixel region; A power supply wiring formed on the same layer on which the gate wiring or the data wiring is formed so as to be spaced apart from the wiring; A switching thin film transistor provided in each pixel region and connected to the gate wiring and the data wiring; a driving thin film transistor connected to the power wiring and the switching thin film transistor; And a protective layer formed on the entire surface of the display region to cover the switching and driving thin film transistor and expose the drain electrode of the driving thin film transistor, Drain electrode.

A method for fabricating an organic electroluminescent device according to an exemplary embodiment of the present invention includes forming a first electrode on a first substrate having a plurality of pixel regions and defining a display region thereon, Forming a first auxiliary wiring extending in a first direction on the first substrate; Forming a bank having a trench that exposes the first sub-line, the sub-line overlaps the edge of each first electrode in the display region and surrounds each pixel region; Forming an organic light emitting layer on each of the first electrodes surrounded by the banks; Forming a second electrode having a first thickness on the entire surface of the display region above the organic light emitting layer; Forming a protruding pattern extending in the first direction and having a dam shape on the inner surface of the second substrate facing the first substrate at the boundary of the pixel region; Forming a second auxiliary wiring corresponding to the bank on the protruding pattern and the inner surface of the second substrate; And bonding the first substrate and the second substrate such that the second auxiliary wiring and the second electrode are in contact with each other, wherein in the trench, the first auxiliary wiring and the second electrode are electrically connected to each other .

At this time, the first and second substrates are attached together so that the protruding pattern is inserted into the trench.

A first luminescent auxiliary layer is formed on the first electrode before the organic luminescent layer is formed, and a second luminescent auxiliary layer is formed on the organic luminescent layer before the second electrode is formed.

At this time, the first and second light-emission-assisting layers are formed so as to be separated for each pixel region, so that the first auxiliary wiring is directly in contact with the second electrode in the trench.

At least one of the first and second light-emission-assisting layers may be formed on the entire surface of the display region. The portion of the second auxiliary wiring corresponding to the upper portion of the protrusion pattern may have a concavo- Wherein the convex structure of the concave and convex structure penetrates through the second electrode and the first and second light-emission-assisted layers located under the concave-convex structure, so as to contact the surface of the first electrode, The plurality of conductive balls contacting the surfaces of the first auxiliary wiring and the second auxiliary wiring and passing through the second electrode and the first and second light emission auxiliary layers located below the second electrode are provided in the trench, .

At this time, the plurality of conductive balls are formed by jetting onto the second electrode in the trench using the inkjet apparatus after forming the second electrode, and when the first and second substrates are attached together, So that the conductive balls are made to come into contact with the surfaces of the first auxiliary wiring and the second auxiliary wiring while digging the second electrode and the first and second auxiliary light-emitting layers.

On the other hand, the second auxiliary wiring is made of any one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, gold (Au), and silver And the second electrode is made of a metal material having a relatively low work function value such as aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg), gold (Au), aluminum magnesium alloy Characterized in that the first thickness is 10 to 200 ANGSTROM.

A gate line and a data line crossing each other on the first substrate to define the pixel region before forming the first electrode, a power line formed in the same layer on which the gate line or the data line is formed, A driving thin film transistor provided in the pixel region and connected to the gate wiring and the data wiring, a driving thin film transistor connected to the power wiring and the switching thin film transistor, and a driving thin film transistor covering the switching thin film transistor, And forming a protective layer having a drain contact hole exposing a drain electrode of the transistor, wherein the first electrode is formed in each of the pixel regions over the protective layer, the drain electrode of the driving thin film transistor Is formed .

The organic electroluminescent device according to the present invention is a low-metal material having a relatively low work function value in the first substrate and has a thickness of about 10 Å to 200 Å and forms a second electrode serving as a cathode electrode, Further, a first auxiliary wiring is formed so as to overlap the gate wiring with a low resistance metal material corresponding to the display region, and a second auxiliary wiring in the form of a lattice is formed in correspondence with the boundary of each pixel region in the second substrate , The first and second auxiliary wirings and the second electrode are brought into contact with each other, thereby reducing the resistance characteristic of the second electrode itself, suppressing the voltage drop per position, suppressing the luminance unevenness due to the voltage drop, There is an effect of improving the quality.

1 is a circuit diagram of one pixel of a general organic light emitting device.
2 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to a first embodiment of the present invention.
FIG. 3 is a schematic plan view of a portion of a display region of a first substrate in an organic electroluminescent device according to a first embodiment of the present invention, showing only a bank and a first auxiliary wiring. FIG.
FIG. 4 is a schematic plan view of a portion of a display region of a second substrate in an organic electroluminescent device according to the first embodiment of the present invention, showing only a protruded pattern and a second auxiliary wiring. FIG.
5 is a cross-sectional view of a portion taken along line VV in Fig. 3;
FIG. 6 is a cross-sectional view taken along the section line VI-VI of FIG. 4; FIG.
7 is a cross-sectional view of a portion of the organic electroluminescent device according to the first embodiment of the present invention cut along the cutting line VV in FIG. 3;
8 is a cross-sectional view illustrating a portion of a display region of a second substrate including a characteristic configuration in an organic electroluminescent device according to a second embodiment of the present invention.
9 is a cross-sectional view of a portion including a characteristic configuration of an organic electroluminescent device according to a second embodiment of the present invention.
10 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to a third embodiment of the present invention.
11A to 11H are cross-sectional views illustrating steps of manufacturing a portion of a display region of an organic electroluminescent device according to a first embodiment of the present invention.
FIGS. 12A to 12B are cross-sectional views illustrating steps of manufacturing the organic electroluminescent device according to the first embodiment of the present invention, taken along the line VV in FIG. 3;
FIGS. 13A to 13D are cross-sectional views of a step-by-step manufacturing process for forming a second auxiliary wiring in an organic electroluminescent device according to a second embodiment of the present invention;
FIGS. 14A to 14B are cross-sectional views illustrating steps of manufacturing an organic electroluminescent device according to a third embodiment of the present invention;

Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the drawings.

First, the basic structure and operating characteristics of the organic electroluminescent device will be described in detail with reference to the drawings.

1 is a circuit diagram of one pixel region of a general organic light emitting device.

As shown in the figure, the organic light emitting device has a structure in which each pixel region P includes a gate wiring, a data wiring, a power supply wiring, a switching thin film transistor STr, a driving thin film transistor DTr, (StgC) and an organic electroluminescent diode (E).

A plurality of gate lines GL are formed spaced apart from each other in a first direction and a plurality of data lines DL are formed in a second direction crossing the first direction. And a power supply line PL for applying a power source voltage is formed at a distance from each data line DL.

At this time, a region captured by the gate line GL and the data line DL is defined as a pixel region P. [

In each pixel region P, a switching thin film transistor STr is formed at the intersection of the data line DL and the gate line GL, and a switching transistor STr is electrically connected to the switching thin film transistor STr. And a thin film transistor DTr is formed.

At this time, the first electrode, which is one terminal of the organic electroluminescent diode E, is connected to the drain electrode of the driving thin film transistor DTr, the second electrode which is the other terminal is connected to the power supply line PL, The power supply line PL transfers a power supply voltage to the organic light emitting diode E.

A storage capacitor StgC is formed between the gate electrode and the source electrode of the driving thin film transistor DTr.

Therefore, when a signal is applied through the gate line GL, the switching thin film transistor STr is turned on and the signal of the data line DL is transmitted to the gate electrode of the driving thin film transistor DTr, The driving thin film transistor DTr is turned on so that light is output through the organic electroluminescent diode E.

At this time, when the driving thin film transistor DTr is turned on, the level of a current flowing from the power supply line PL to the organic light emitting diode E is determined, It becomes possible to implement a gray scale.

The storage capacitor StgC maintains a constant gate voltage of the driving thin film transistor DTr when the switching thin film transistor STr is turned off so that the switching thin film transistor STr is turned off the level of the current flowing through the organic electroluminescent diode E can be maintained constant until the next frame even if the off state is established.

Hereinafter, the structure of the organic electroluminescent device according to the embodiment of the present invention for displaying an image by such driving will be described.

FIG. 2 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to a first embodiment of the present invention. FIG. 3 is a cross- FIG. 4 is a schematic plan view of a portion of a display region of a second substrate in the organic light emitting device according to the first embodiment of the present invention, and FIG. 4 is a plan view schematically showing a protrusion pattern and Only the second auxiliary wiring is shown. FIG. 5 is a cross-sectional view of a portion cut along the cutting line VV in FIG. 3, showing only the components above the protective layer, and FIG. 6 is a cross-sectional view taken along line VI- FIG. 7 is a cross-sectional view of a portion of the organic electroluminescent device according to the first embodiment of the present invention, taken along a line VV in FIG. 3; FIG. In this case, for convenience of description, a region where the switching thin film transistor and the driving thin film transistor are to be formed in each pixel region P is defined as an element region TrA, and a driving thin film transistor DTr is formed for each pixel region P However, in the drawing, only one pixel region P is shown.

As shown in the drawing, the organic EL device 101 according to the first embodiment of the present invention includes a driving and switching thin film transistor DTr (not shown), an organic light emitting diode E, A first substrate 110 on which a first auxiliary wiring 148 made of a metal material having a low resistance characteristic is formed in correspondence to a boundary of each pixel region P, And a second substrate 170 for protecting and encapsulating the organic electroluminescent diode E are provided facing each other with a second auxiliary wiring 175 formed thereon.

First, the structure of the first substrate 110 including the driving and switching thin film transistor DTr (not shown) and the organic electroluminescent diode E will be described.

On the first substrate 110, a first region 113a in which a channel is formed is formed of pure polysilicon in each pixel region P, and a central portion of the pixel region P is doped with a high concentration of impurities on both sides of the first region 113a. And a second region 113b formed on the semiconductor layer 113. [

A buffer layer (not shown) made of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) may be further formed on the entire surface between the semiconductor layer 113 and the first substrate 110.

The buffer layer (not shown) prevents the deterioration of the characteristics of the semiconductor layer 113 due to the release of alkali ions from the inside of the first substrate 110 when the semiconductor layer 113 is crystallized.

A gate insulating layer 116 is formed on the entire surface of the semiconductor layer 113 and a gate electrode 116 corresponding to the first region 113a of the semiconductor layer 113 is formed on the gate insulating layer 116. [ 120 are formed.

The gate insulating layer 116 is connected to a gate electrode (not shown) of a switching thin film transistor (not shown) and extends in one direction to form a gate wiring (not shown). At this time, the gate electrode 120 (not shown) and the gate wiring (not shown) constituting the driving and switching thin film transistor DTr (not shown) are formed of a metal material having a low resistance property such as aluminum (Al) AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum alloy (MoTi), or a combination of two or more materials.

An interlayer insulating film 123 is formed on the entire surface of the gate electrode 120 (not shown) and the gate wiring (not shown). The interlayer insulating layer 123 and the gate insulating layer 116 under the semiconductor layer contact hole 125 expose the second regions 113b located on both sides of the first region 113a .

A data line 130 is formed on the interlayer insulating layer 123 including the semiconductor layer contact hole 125 so as to intersect the gate line (not shown) to define the pixel regions P.

The first region 113b and the second region 113b are separated from each other in the driving region DA and the switching region (not shown) above the interlayer insulating layer 123 and are exposed through the semiconductor layer contact hole 125, And drain electrodes 133 and 136 are formed.

A semiconductor layer 113 including the source and drain electrodes 133 and 136 and a second region 113b contacting the electrodes 133 and 136 and a gate electrode The insulating film 116 and the gate electrode 120 constitute a driving thin film transistor DTr and a switching thin film transistor (not shown), respectively.

The source and drain electrodes 133 and 136 spaced apart from the data line 130 may also be formed of a metal material having low resistance characteristics such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum alloy (MoTi), or a single layer or a multilayer structure.

The switching thin film transistor (not shown) is electrically connected to the driving thin film transistor DTr, the gate wiring (not shown) and the data wiring 130, and the data wiring 130 is connected to the switching thin film transistor The driving TFT DTr is connected to the power supply line (not shown) and the organic light emitting diode E (not shown).

In the organic EL device 101 according to the first embodiment of the present invention, the driving thin film transistor DTr and the switching thin film transistor (not shown) have a polysilicon semiconductor layer 113 and a top gate type The driving and switching thin film transistor DTr may be a bottom gate type TFT having a semiconductor layer 320 made of an amorphous silicon semiconductor layer 220 or an oxide semiconductor material, (Bottom gate type).

A gate insulating film, a semiconductor layer made of an amorphous silicon ohmic contact layer spaced apart from the active layer of pure amorphous silicon, and a source electrode spaced apart from the source electrode, And a gate electrode, a gate insulating film, an oxide semiconductor layer, an etch stopper, and a stacked structure of source and drain electrodes spaced from each other on the etch stopper and contacting the oxide semiconductor layer, respectively, .

In the case of the first substrate 110 on which the bottom gate type driving and switching thin film transistor DTr (not shown) is formed, the gate wiring is formed to be connected to the gate electrode of the switching thin film transistor in the same layer on which the gate electrode is formed And the data line is connected to the source electrode in the same layer where the source electrode of the switching thin film transistor is formed.

2, power wiring (not shown) is formed on the same layer on which the gate wiring (not shown) is formed or the same layer on which the data wiring 130 is formed, although not shown in the drawing. The wiring (not shown) is connected to one electrode of the driving thin film transistor DTr.

In addition, a protective layer 140 having a planarized surface is formed on the entire surface of the first substrate 110 over the driving and switching thin film transistor DTr (not shown). A drain contact hole 143 is formed in the passivation layer 140 to expose the drain electrode 136 of the driving TFT DTr.

The protective layer 140 having the drain contact hole 143 is in contact with the drain electrode 136 of the driving thin film transistor DTr through the drain contact hole 143, A first electrode 147 is formed.

The first electrode 147 has a bilayer structure, the upper layer 147b serves as an anode electrode, and the lower layer 147a serves as a reflector.

The upper layer 147b of the first electrode 147 may be formed of a transparent conductive material such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) having a relatively large work function value to serve as an anode electrode. And the lower layer 147a of the first electrode 147 is formed of a metal material having excellent reflection efficiency, for example, aluminum (Al) or silver (Ag) The light emitted from the organic light emitting layer 155 is reflected upward and recycled, thereby improving the luminous efficiency.

The organic electroluminescent device 101 according to the first embodiment of the present invention is a top emission type and light emitted from the organic light emitting layer 155 toward the first substrate 110 is substantially emitted by the user The first electrode 147 is formed to have a double layer structure including a lower layer 147a made of a metal material having a good reflection ability so as to improve the luminance characteristic and further simplify the manufacturing process by recycling such light because it does not feel and disappear. .

In the organic electroluminescent device 101 according to the first embodiment of the present invention, one of the most distinctive features is the gate line (not shown) among the boundaries of the pixel regions P above the protective layer 140, A first auxiliary wiring 148 made of the same metal material as the first electrode 110 is formed corresponding to a portion where the switching and driving thin film transistor (not shown) DTr is formed.

Although the first auxiliary wiring 148 extends in the first direction like the gate wiring (not shown) and is spaced apart from the display region, the first auxiliary wiring 148 is connected to the non-display region outside the display region And are substantially connected to each other on the first substrate 110.

The first auxiliary wiring 148 is formed apart from the first electrode 147 formed in each pixel region P, and it is not necessarily required to have a double-layer structure, and a single layer Structure.

In the drawing, the first auxiliary wiring 148 has the same double layer structure as the first electrode 147, for example.

Next, the first electrode 147 and the first auxiliary wiring 148 having a bilayer structure are formed on the boundary of each pixel region P in such a manner as to surround each pixel region P, The bank 150 is formed so as to overlap the rim portion and to completely overlap the first auxiliary wiring 148 and to expose the central portion of the first electrode 147. [

The bank 150 may be made of a common transparent organic insulating material, for example, polyimide, photo acryl, benzocyclobutene (BCB), or a black material such as black Resin.

The banks 150 are formed in a lattice shape in which the pixel regions P are arranged in the display region and the banks 150 are formed in the bank 150 with respect to the portions of the banks 150 where the first sub- 148 are exposed, and a trench (tch) is provided.

On the other hand, the organic light emitting layer 155 is formed on the first electrode 147 in each pixel region surrounded by the bank 150, .

At this time, the organic light emitting layer 155 may include red, green, blue, and white light, as well as a white light emitting material, in addition to the red, green, and blue light emitting materials described above.

In the drawing, for example, an organic light emitting layer 155 emitting red, green and blue light is formed.

A second electrode 158 is formed on the organic light emitting layer 155 to serve as a cathode electrode and maintain transparency on the entire surface of the display region. At this time, the first and second electrodes 147 and 158 and the organic light emitting layer 155 formed therebetween form an organic light emitting diode E.

The second electrode 158 is in contact with the first auxiliary wiring 148 exposed through the trench tch provided in the bank 150.

Although not shown in the drawing, the light emitting efficiency of the organic light emitting layer 155 is improved between the first electrode 147 and the organic light emitting layer 155 and between the organic light emitting layer 155 and the second electrode 158, A first luminescence compensation layer (not shown) and a second luminescence compensation layer (not shown) having a multilayer structure may be further formed.

At this time, the first emission compensation layer (not shown) of a plurality of layers is sequentially stacked from the first electrode 147, and may be a hole injection layer and a hole transporting layer, The emission compensation layer (not shown) may be sequentially stacked from the organic emission layer 155 and may include an electron transporting layer and an electron injection layer.

Although the first luminescence compensation layer (not shown) and the second luminescence compensation layer (not shown) have a bilayer structure as an example, the bilayer structure is not necessarily required. That is, the first emission compensation layer (not shown) may be a hole injection layer or a hole transport layer to form a single layer structure, and the second emission compensation layer (not shown) may also be an electron injection layer or an electron transport layer, .

In addition, the first emission compensation layer (not shown) may further include an electron blocking layer, and the second emission compensation layer (not shown) may further include a hole blocking layer.

The second electrode 158 formed on the organic light emitting layer 155 may be formed of a metal material having a relatively low work function value such as aluminum (Al), aluminum alloy (AlNd), silver (Ag ), Magnesium (Mg), gold (Au), and aluminum magnesium alloy (AlMg).

At this time, the organic electroluminescent device 101 according to the first embodiment of the present invention is driven by the top emission type, and the second electrode 158 has a thickness of 10 Å or more, which allows light to pass therethrough smoothly, And is about 200 ANGSTROM.

Meanwhile, when the second electrode 158 serving as the cathode electrode is formed to have a thickness of about 10 Å to about 200 Å in order to maintain the light-transmitting property on the characteristics of the organic light emitting device 101 of the upper emission type, The thickness of the organic light emitting layer 155 is different from that of the organic light emitting layer 155. Accordingly, the brightness of the light emitted from the organic light emitting layer 155 is different from that of the organic light emitting layer 155,

That is, since the second electrode 158 is formed on the entire surface of the display region and the signal voltage to the second electrode 158 is formed through the wiring provided in the non-display region outside the display region, A difference in voltage drop due to the difference in distance is generated based on the portion of the display area, and in particular, the voltage drop amount at the center portion and the magnetic field portion of the display region have a large difference, resulting in a luminance non-uniformity phenomenon.

Therefore, in order to suppress such a luminance non-uniformity phenomenon, the organic light emitting diode 101 according to the first embodiment of the present invention may further include a first auxiliary wiring 148 made of a low-resistance metal material contacting the second electrode 158 It is possible to suppress the luminance non-uniformity phenomenon due to the large surface resistance of the second electrode 158 itself.

Furthermore, the organic electroluminescent device according to the second embodiment of the present invention further suppresses the luminance deficiency phenomenon due to the large surface resistance of the second electrode 158, The second auxiliary wiring 175 is further provided.

The structure of the second substrate 170 having such a structure will be described.

In the second substrate 170 of the organic electroluminescent device according to the first embodiment of the present invention, the trenches (tch) in the first substrate 110 corresponding to the trenches (tch) And a protrusion pattern 173 in the form of a dam is provided at a portion corresponding to the first auxiliary wiring 148 when positioned to face the first substrate 110.

The protruding patterns 173 are formed in a bar shape extending in the first direction on the entire surface of the display area and are spaced apart from each other by a predetermined distance.

Aluminum (Al), aluminum (AlNd), copper (Cu), and the like are formed corresponding to the boundaries of the pixel regions P including the upper portion of the protruding patterns 173, , A copper alloy, gold (Au), and silver (Ag).

The second auxiliary wiring 175 is formed in a lattice shape to frame each pixel region corresponding to the display area. A part of the second auxiliary wiring 175 is formed on the protruding pattern 173, And a part thereof is formed on the inner surface of the second substrate 170.

The first substrate 110 and the second substrate 170 having the above-described structure are provided with an adhesive (not shown) made of a sealant or a frit along the edges thereof. The first substrate 110 and the second substrate 170 are adhered to each other to maintain a panel state.

The organic electroluminescent device 101 according to the first embodiment of the present invention may include the second electrode 158 provided on the first substrate 110 and the second electrode 158 provided on the second substrate 170, Portions of the auxiliary wiring 175 corresponding to the protruding patterns 173 are in contact with each other in the trenches of the banks 150 provided in the first substrate 110. Further, A portion of the auxiliary wiring 175 corresponding to the bank 150 provided on the first substrate 110 is in contact with the second electrode 158 formed on the upper portion of the bank 150. [

According to this configuration, even if the second electrode 158 provided on the first substrate 110 has a thin thickness that is a common electrode for maintaining light transmittance, the second electrode 158 may be formed on the first substrate 110 in a bar shape The first auxiliary wiring 148 formed in correspondence to the gate wiring (not shown) and the second auxiliary wiring 175 in the form of a lattice provided on the inner surface of the second substrate 170 are in line contact with each other, The voltage drop in the second electrode 158 having a large size can be suppressed.

A vacuum state may be established between the first substrate 110 and the second substrate 170 which are spaced apart from each other, or an inert gas atmosphere may be formed by being filled with an inert gas.

Meanwhile, the second substrate 170 may be made of a flexible plastic, or may be a glass substrate.

Although not shown in the drawing, the organic light emitting device 101 according to the first embodiment of the present invention having such a structure has a Vss wiring (not shown in the drawing) provided in a non-display area outside the display area of the first substrate 110, A signal voltage applied from a printed circuit board (not shown) including a gate and a data driving circuit (not shown) is connected to the Vss wiring (not shown) To the second electrode (158) formed on the entire surface of the display area by using the first auxiliary wiring (148) and the second auxiliary wiring (175) connected to the first auxiliary wiring (148).

At this time, the signal voltage applied to the Vss wiring (not shown) is not transferred to the second electrode 158 formed on the entire surface of the display region using the second electrode 158 itself, and the internal resistance value per unit area And is transmitted to the second electrode 158 through the first and second auxiliary wirings 175 where a voltage drop is not generated.

Therefore, even if the second electrode 158 has a large area, it is possible to suppress luminance unevenness depending on the position of the organic electroluminescent device 101 due to a change in the magnitude of the signal voltage due to a voltage drop amount at each position.

That is, in the case of the organic EL device 101 according to the first embodiment of the present invention, the signal voltage is transmitted through the first and second auxiliary lines 175 to the second electrode 158, And the second auxiliary wiring 175 are not substantially changed in size due to the low internal resistance of the first and second auxiliary wirings 148 and 175.

Therefore, a signal contact having a substantially similar size is applied to the edge portion of the display region of the second electrode 158 via the first and second auxiliary wirings 148 and 175 or the portion located at the center portion of the display region .

The substantial distance that the signal voltage is transmitted through the second electrode 158 is the distance between the neighboring first auxiliary wiring lines 148, which is the distance between the neighboring first auxiliary wiring lines 148, The voltage drop due to the large sheet resistance of the second electrode 158 itself is hardly generated. Accordingly, the luminance non-uniformity of the second electrode 158 can be suppressed from its original position.

In the case of the organic electroluminescent device 101 according to the first embodiment of the present invention, the organic light emitting layer 155 or the organic light emitting layer 155 and the first and second light emitting layers 155, The first and / or second emission compensation layers (not shown), except for the organic emission layer 155, are formed on the second electrode 158 and the second emission layer Or may be formed on the entire surface of the display region.

In this case, since the first and / or second emission compensation layers (not shown) are formed between the first auxiliary wiring 148 and the second electrode 158, the first auxiliary wiring 148 and / The second electrodes 158 do not contact each other and thus can not be energized.

Accordingly, an organic electroluminescent device according to a second embodiment of the present invention is proposed to solve such a problem.

FIG. 8 is a cross-sectional view showing a part of a display region of a second substrate including a characteristic configuration in the organic electroluminescent device according to the second embodiment of the present invention, and FIG. 9 is a cross- Sectional view of a portion including a characteristic configuration of an electroluminescent device. Here, the organic electroluminescent device 201 according to the second embodiment of the present invention differs from the first embodiment only in the parts shown in FIGS. 8 and 9, Only the configuration will be described. Here, for convenience of explanation, only the hole transport layer 156c among the elements constituting the second light-emission auxiliary layer 157b is formed on the entire display region, and the remaining first light-emission-assisting layer 157a and the second light- The hole injection layer 156c of the auxiliary layer 157b is selectively formed for each pixel region P as an example. However, the first and second emission auxiliary layers 157a and 157b may be formed in the display region Or the first and / or second light-emission-assisting layers 157a and 157b may be formed in units of a display region or a unit of each pixel region P, respectively.

As shown in the drawing, the organic light emitting device 201 according to the second embodiment of the present invention has a structure in which the portion of the second auxiliary wiring 175 located above the protruding pattern 173 in the second substrate 170 is flat It is characterized by rugged concave and convex, that is, a concave and convex.

In the drawing, the second auxiliary wiring 175 is completely removed to expose the surface of the protruding pattern 173 in the portion forming the recess in the upper part of the protruding pattern 173. However, in the recess, And the second auxiliary wiring 175 made of the low-resistance metal material may remain.

The portion of the second auxiliary wiring 175 located above the protrusion pattern 173 is formed in a concavo-convex shape as described above because the second substrate 170 and the first substrate 110 are bonded The convex portion of the second auxiliary wiring 175 more precisely the convex portion makes contact with the second electrode 158 and the hole transport layer 156c located under the second electrode 158 to make contact with the first auxiliary wiring 148 .

When the convex portion of the second auxiliary wiring 175 is brought into contact with the first auxiliary wiring 148, the second electrode 158 is in side contact with the convex portion of the second auxiliary wiring 175, Further, the convex portion of the second auxiliary wiring 175 is in contact with the first auxiliary wiring 148, so that the second electrode 158 naturally passes through the convex portion of the second auxiliary wiring 175, 1 auxiliary wirings 148, as shown in FIG.

Therefore, even if the first and / or second light-emitting auxiliary layers 157a and 157b or any one of the first and second auxiliary wirings 148 and 158 is formed as a hole transport layer 156c, 1 and the second auxiliary wirings 148 and 175 are electrically connected to the second electrode 158 so that the brightness deficiency can be suppressed for each position of the second electrode 158.

10 is a cross-sectional view of a portion of a display region of an organic electroluminescent device according to a third embodiment of the present invention. In the organic electroluminescent device according to the third embodiment of the present invention, the organic electroluminescent device according to the first embodiment of the present invention described above, except for the configuration of the portion where the protruding pattern 173 of the second substrate 170 is formed, And has the same configuration as that of the electroluminescent element (101 of FIG. 2), so that only the characteristic configuration will be described.

 The organic electroluminescent device 3041 according to the third embodiment of the present invention has the same structure as that of the first embodiment of the first and second substrates 110 and 170.

The difference from the first embodiment is that a plurality of conductive balls 310 are provided on the trenches of the first substrate 110 in which the protrusion patterns 173 of the second substrate 170 are inserted .

 The organic electroluminescent device according to the third embodiment of the present invention may include a plurality of conductive balls 310 on the second electrode 158 inside the trench, The conductive balls 310 may be formed on the second electrode 158 and the first and / or second light-emitting auxiliary layers 157a and 157b located under the second electrode 158 when the two substrates 170 are attached to each other. The hole transport layer 156c is pinched and contacted with the first auxiliary wiring 148.

The first auxiliary wiring 148 and the second auxiliary wiring 175 are electrically connected via the conductive ball 310 and the second electrode 158 is electrically connected to the conductive ball 310 The first and second auxiliary wirings 148 and 175 may be in contact with each other even if the hole transport layer 156c is formed between the second electrode 158 and the first auxiliary wiring 148, The second electrode 158 is electrically connected to the second electrode 158, thereby suppressing the brightness deficiency for each position of the second electrode 158.

Hereinafter, a method of manufacturing the organic electroluminescent device according to the first, second, and third embodiments of the present invention will be described. Here, the method of manufacturing the organic electroluminescent device according to the first embodiment will be mainly described, and the method of manufacturing the organic electroluminescent device according to the second and third embodiments will be described only in the part different from the first embodiment .

FIGS. 11A to 11H are cross-sectional views illustrating steps of manufacturing a part of a display region of the organic electroluminescent device according to the first embodiment of the present invention, and FIGS. 12A to 12B are cross-sectional views illustrating steps of manufacturing the organic electroluminescent device according to the first embodiment of the present invention. Sectional view taken along the cutting line VV in Fig. In this case, the manufacturing method of forming the driving and switching thin film transistor (DTr) (not shown) in the organic electroluminescent device 101 according to the first embodiment of the present invention is the same as that of a general organic electroluminescent device The detailed description of the method of forming these components is omitted, and only the subsequent steps including the step of forming the protective layer 140 will be described in detail.

First, as shown in Figs. 11A and 12A, on a transparent first insulating substrate 110, for example, a glass material or a plastic substrate having a flexible characteristic, a gate electrode (Not shown), a data line 130, and a power supply line (not shown) are formed and a switching and driving thin film transistor (not shown) is formed in each pixel region P.

At this time, when the driving and switching thin film transistor DTr (not shown) forms a top gate structure as in the first embodiment of the present invention, the first region 113a of pure polysilicon and the impurity- A gate electrode 120 formed by overlapping the first region 113a with the semiconductor region 113 of polysilicon composed of the second region 113b of polysilicon, the gate insulating film 116, An interlayer insulating film 123 having a semiconductor layer contact hole 125 exposing the source and drain regions 113a and 113b and an interlayer insulating film 123 having a source and a drain contacted with the source and drain regions 113b through the semiconductor layer contact hole 125, The electrodes 133 and 136 are formed to have a laminated structure.

Although not shown, when the driving and switching thin film transistor DTr (not shown) forms a bottom gate structure as in the modified example, the gate electrode, the gate insulating film, and the active layer of pure amorphous silicon are spaced apart from each other A gate electrode, a gate insulating film, an oxide semiconductor layer, an etch stopper, and an etch stopper formed on the etch stopper so as to have a laminated structure of a semiconductor layer composed of an ohmic contact layer of impurity amorphous silicon and source and drain electrodes spaced apart from each other, And a source electrode and a drain electrode which are in contact with the oxide semiconductor layer.

Next, an organic insulating material such as photo-acryl is applied on the switching and driving thin film transistor (not shown) (DTr), and the masking process is performed to pattern the organic insulating material, and the drain electrode 136 of the driving thin film transistor DTr A drain contact hole 143 is formed to expose the source / drain region 140 and a protective layer 140 having a flat surface is formed.

Next, as shown in FIGS. 11B and 12B, a metal material (for example, aluminum (Al) or silver (Ag)) having a plate shape and excellent reflection efficiency is formed on the protective layer 140 for each pixel region P, Layer structure of an upper layer 147b made of indium-tin-oxide (ITO), which is a transparent conductive material having a relatively high work function value, is formed on the lower layer 147a, (Not shown) and the first auxiliary wiring 148 overlapping a part or the whole of the gate wiring (not shown) in correspondence with the region in which the driving and switching thin film transistors DTr (not shown) are formed.

In this case, the first auxiliary wiring 148 may have a double layer structure of the lower layer 148a and the upper layer 148b, or may have a double layer structure of the lower electrode 148a, 147a may be formed as a single layer structure.

When both the first electrode 147 and the first auxiliary wiring 148 have a double layer structure, the first metal layer (not shown) and the transparent conductive material After a first photoresist layer (not shown) is formed on top of the first photoresist layer (not shown), an exposure mask (not shown) having a transmissive region and a blocking region and a transflective region is used to form a diffraction or half A first photoresist pattern (not shown) having a first thickness and a second photoresist pattern (not shown) having a second thickness thinner than the first thickness are formed by performing a tone exposure, and the first and second The first electrode 147 and the first auxiliary wiring 148 having a bilayer structure are formed by removing the transparent conductive material layer (not shown) and the first metal layer (not shown) exposed to the outside of the photoresist pattern (not shown) .

Thereafter, ashing is performed to remove the second photoresist pattern (not shown) having the second thickness, and then the second photoresist pattern (not shown) is removed to expose the first auxiliary wiring 148 And then removing the first photoresist pattern (not shown) by stripping the first photoresist pattern (not shown) to form a first auxiliary wiring 148 having a single-layer structure by removing the upper layer 148b of the first photoresist pattern The first auxiliary wiring 147 and the first auxiliary wiring 148 of a single layer structure can be formed.

When the first electrode 147 and the first auxiliary wiring 148 have a double layer structure, the first electrode 147 and the first auxiliary wiring 148 may be formed through a mask process using an exposure mask (not shown) having a general transmissive region and a blocking region.

In the drawing, the first auxiliary wiring 148 has a double layer structure.

Next, as shown in FIGS. 11C and 11C, an organic material, preferably a polymer material having a hydrophobic property together with a photosensitive property, such as fluorine (F), is formed on the first electrode 147 and the first auxiliary wiring 148, ) Is coated to a thickness of several micrometers, more precisely, 1 占 퐉 or less by coating a mixture of one or more of polyimide, styrene, methyl mathacrylate, and polytetrafluoroethylene, An organic material layer (not shown) having a thickness of about 10 mu m is formed.

At this time, since the organic material layer (not shown) has photosensitive characteristics, the organic material layer can be patterned by exposing itself, so that a separate photoresist layer coating and etching process can be omitted for patterning.

Thereafter, the organic material layer (not shown) is exposed by using an exposure mask, and a mask process including development of the organic material layer is performed to pattern the organic material layer, thereby forming a boundary of each pixel region P, And the data lines 130 and overlaps the edge portions of the first electrodes 147 provided in the respective pixel regions P with a predetermined width and further exposes the first auxiliary lines 148 to the trenches tch) are formed.

The bank 150 has a height of about 1 to 10 mu m from the surface of the protective layer 140 and has a lattice shape on the entire surface of the display region so that the center portion of the first electrode 147 in each pixel region P And a trench tch for exposing the first auxiliary wiring 148 is provided in a portion formed in a first direction, that is, a direction in which the gate wiring (not shown) is extended. to be.

Next, as shown in FIGS. 11D and 11D, an ink jet apparatus (not shown) corresponding to the first substrate 110 having the banks 150 having a grid shape in the display region and provided with trenches tch ) Or a nozzle coating apparatus (not shown) to eject or drop the liquid organic light emitting material corresponding to the region surrounded by the bank 150, or each pixel region P, more precisely, An organic emission layer 155 is formed on the first electrode 147 in each pixel region P by performing thermal evaporation using a shadow mask (not shown) having an opening with respect to the region surrounded by the first electrode 147.

Although only one organic light emitting layer 155 is formed on the first electrode 147 in the drawing, a first light emitting auxiliary layer (not shown) may be interposed between the organic light emitting layer 155 and the first electrode 147, And a second emission auxiliary layer (not shown) may further be formed on the organic emission layer 155.

The first light-emitting auxiliary layer (not shown) may be at least one of a hole injection layer (not shown), a hole transporting layer (not shown), and an electron blocking layer. The second light-emitting auxiliary layer (not shown) may be one or more of an electron transporting layer (not shown), an electron injection layer and a hole blocking layer.

The first and second light-emission-assisting layers (not shown) may be formed separately for each pixel region P, such as the organic light-emitting layer 155, or may be formed continuously on the entire surface of the display region.

Next, as shown in FIGS. 11E and 12E, a metal material having a relatively low work function value, such as aluminum (Al), an aluminum alloy (AlNd), or the like is formed on the organic light emitting layer 155 or the second light- ), Silver (Ag), magnesium (Mg), gold (Au), and aluminum magnesium alloy (AlMg) are mixed and thermal vapor deposition is performed in a vacuum atmosphere, The first electrode 110 of the organic electroluminescent device according to the first embodiment of the present invention is completed.

On the other hand, in the case of the second electrode 158 formed by the thermal vapor deposition, the upper surface and the side surface of the bank 150 including the organic light emitting layer 155 are continuously connected to the entire display region to be.

Accordingly, when the first and second light-emission-assisting layers (not shown) are not provided or the first and second light-emission-assisting layers (not shown) are separately formed for each pixel region P And is in contact with the first auxiliary wiring 148 exposed through the trench tch.

At this time, if any one or more of the first and / or second light-emission-assisting layer (not shown) is formed on the entire display region, the first and / or second light- The second electrode 158 is in contact with the first auxiliary wiring 148 in the trench tch so that the first and / or second emission assistant layer (not shown) The second electrode 158 and the first auxiliary wiring 148 are finally electrically connected to each other by the manufacturing method according to the second embodiment of the present invention. So it does not matter.

The first electrode 147, the organic light emitting layer 155, and the second electrode 158, which are sequentially stacked in each pixel region P, constitute an organic light emitting diode E.

Next, as shown in FIGS. 11F and 12F, a transparent second insulating substrate 170, for example, a bank 150 (not shown) formed on the first substrate 110 on a glass substrate or a plastic substrate having a flexible characteristic For example, polyimide containing fluorine (F), styrene, methylmethacrylate (methylmethacrylate), or the like, which has a hydrophobic property together with an organic material, mathacrylate, and polytetrafluoroethylene are coated to form an organic material layer (not shown).

Thereafter, the organic material layer is patterned by a masking process to form a dam-shaped protrusion pattern 173 extending in the first direction and spaced apart by a predetermined distance.

The protrusion pattern 173 is formed to have a width smaller than the width of the trench tch so as to be inserted into each of the trenches tch corresponding to the trench tch provided in the first substrate 110. [ .

11G and 12G, a low resistance metal material such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, gold (Au) The first insulating substrate 170 and the second insulating substrate 170 are patterned to form a grid pattern in which each pixel region P is formed on the surface of the second insulating substrate 170 in addition to the protruding pattern 173, The second auxiliary wiring 175 is formed.

The second auxiliary wiring 175 overlaps with the bank 150 formed on the first substrate 110 and has the same planar shape. Further, the second auxiliary wiring 175 has a part The second substrate 170 and the second substrate 170. The second substrate 170 is formed on the upper surface and the side surface of the pattern 173,

In the case of the organic electroluminescent device according to the first and third embodiments (101 in FIG. 2 and 301 in FIG. 10), the second auxiliary wiring 175 is formed on the entire surface of the second substrate 170 The portion of the second auxiliary wiring 175 formed on the upper surface of the protruding pattern 173 may be formed to have a smooth surface. However, in the case of the organic electroluminescent device 201 according to the second embodiment of the present invention And is formed to have a rugged concavo-convex structure.

Here, a method of forming the second auxiliary wiring 175, which is a differentiating structure of the organic electroluminescent device 201 (FIG. 9) according to the second embodiment of the present invention, is described with reference to FIGS. 13A to 13D Sectional view illustrating a step of forming a second auxiliary wiring 175 in an organic electroluminescent device according to a second embodiment of the present invention.

First, as shown in FIG. 13A, a low-resistance metal material layer 174 is formed on the entire surface of the second insulating substrate 110 on which the protrusion patterns 173 are formed.

Thereafter, a photoresist is coated on the low-resistance metal material layer to form a second photoresist layer 181, and an exposure having a transmissive area TA and a blocking area BA on the second photoresist layer 181 After the mask 190 is positioned, the second photoresist layer 181 is exposed using the exposure mask.

At this time, the transmissive region TA and the blocking region BA alternate with each other in the exposure mask 190 with respect to the low resistance metal material layer 174 formed on the protruding pattern 173 .

Meanwhile, in the drawing, the exposure mask 190 having the transmissive area TA and the blocking area BA alternately disposed thereon is disposed above the protruding pattern 173, Although not shown in the drawing, the exposure may be performed after positioning an exposure mask having a configuration in which the semi-transmission region and the transmission region alternate with each other.

Next, as shown in FIG. 13B, when development is performed on the exposed second photoresist layer (181 in FIG. 13A), the same first height is formed on the low resistance metal material layer 174 A third photoresist pattern 182 is formed.

At this time, the third photoresist patterns 182 are formed in such a manner that they are spaced apart from each other with a predetermined width corresponding to the upper portions of the protruding patterns 173, and on the outside of the third photoresist patterns 182, The material layer 174 is exposed.

On the other hand, when exposure is performed using an exposure mask in which the transmissive region and the transflective region alternate with the upper portion of the protruding pattern 173, although not shown in the drawing, when the second photoresist layer is developed, A third photoresist pattern (not shown) having a first height is formed on the low resistance metal layer above the pattern 173, and a fourth photoresist pattern (not shown) having a second height Resistance metal material layer 174 formed on the second insulating substrate 170, that is, a portion where the second auxiliary wiring (175 of FIG. 13D) is to be formed later, A third photoresist pattern (not shown) having a height of 1 is formed.

Next, as shown in FIG. 13C, when the low resistance metal material layer (174 in FIG. 13B) exposed to the outside of the third photoresist pattern 182 is etched and removed, as shown in the figure, The second auxiliary wiring 170 has a smooth surface with respect to the side surface of the protruding pattern 173 and the second insulating substrate 170. The second auxiliary wiring 170 has a surface having a predetermined width and spaced apart from the upper surface of the pattern 173, 175 are formed.

Thereafter, as shown in FIG. 13D, the strip is moved to remove the third photoresist pattern (182 in FIG. 13C) to form the organic electroluminescent element (201 in FIG. 9) according to the second embodiment of the present invention 2 substrate 170 can be completed.

On the other hand, when the third and fourth photoresist patterns having the first and second heights are formed, the low resistance metal material layer exposed outside the third and fourth photoresist patterns is etched The second auxiliary wiring having upper and side surfaces of the protruding patterns and a smooth surface on the second substrate.

Then, the ashing is performed to remove the fourth photoresist pattern having the second height, thereby exposing a part of the surface of the second auxiliary wiring located above the protruding pattern. In this case, on the second auxiliary wiring corresponding to the upper portion of the protruding pattern, the third photoresist patterns are formed in a state of being spaced apart by a predetermined width, and the second auxiliary wiring is exposed between the plurality of third photoresist patterns State.

Then, when the etching is performed on the second auxiliary wiring exposed to the outside of the third photoresist pattern, a second auxiliary wiring having a rugged concavo-convex structure can be formed only in correspondence to the upper portion of the protruding pattern.

At this time, the etching of the second auxiliary wiring exposed to the outside of the third photoresist pattern proceeds for a time shorter than the etching time at which the second auxiliary wiring is completely removed, so that the second auxiliary wiring is not completely removed, The second auxiliary wiring can be formed on the protruding pattern so that the top surface of the derived pattern is not exposed and the concave-convex structure of the concave and convex portions is formed.

11H and 12H, the first substrate 110 and the second substrate 170, which have been completed as described above, are positioned so that the trench tch and the protrusion pattern 173 face each other (Not shown) such as a seal pattern or a frit pattern along the rim of the first substrate 110 or the second substrate 170 is formed on the first substrate 110 or the second substrate 170, And the second substrates 110 and 170 are joined together to complete the organic EL device 101 according to the first embodiment of the present invention.

At this time, the projecting pattern 173 is inserted into the trench tch so that the second electrode 158 and the second auxiliary wiring 175 are in contact with each other in the trench tch And the second electrode 158 formed on the bank 150 and the second auxiliary wiring 175 formed on the second substrate 170 are in contact with each other.

The first auxiliary wiring 148 and the second electrode 158 are formed in the trench tch by the method of manufacturing the organic electroluminescent device 101 according to the first embodiment of the present invention, It is possible to provide an organic electroluminescent device capable of suppressing a luminance nonuniformity defect due to a large sheet resistance of the second electrode 158 because the wiring 175 is brought into contact with each other.

Referring to FIG. 9, in the method of manufacturing an organic electroluminescent device according to the second embodiment of the present invention, the first substrate 110 and the second substrate 170 are bonded together, The convex portion of the second auxiliary wiring 175 formed on the protruding pattern 173 is electrically connected to the second electrode 158 and the first and second light emitting auxiliary layers 157a and 157b as one component And finally the end of the convex portion of the second auxiliary wiring 175 is brought into contact with the surface of the first auxiliary wiring 148.

Therefore, according to the method of manufacturing the organic electroluminescent device 201 according to the second embodiment of the present invention, the first and / or the second organic electroluminescent layer 155 is formed between the second electrode 158 and the organic light emitting layer 155 in the trench tch. The first auxiliary wiring 148 and the second electrode 158 and the second auxiliary wiring 175 are electrically connected to each other even if the first and second auxiliary light emission layers 157a and 157b are further provided.

10, the first substrate 110 and the second substrate 170 are completed, respectively. Referring to FIG. 10, the method of manufacturing the organic electroluminescent device according to the third embodiment of the present invention The process is the same as that of the first embodiment, and one step is further performed before the step of attaching the first substrate 110 and the second substrate 170.

Referring to FIGS. 14A to 14B, which are cross-sectional views illustrating a manufacturing process of an organic electroluminescence device according to a third embodiment of the present invention, the trench tch on the completed first substrate 110 using the inkjet apparatus 195 A plurality of conductive balls 310 are sprayed onto the second electrode 158 inside the conductive ball layer to form a conductive ball layer.

At this time, the conductive ball 310 and the volatile solvent inject ink selectively through the inkjet apparatus, and the ink mixed with the conductive ball 310 is sprayed, and then the solvent is volatilized, So that only the conductive ball 310 remains on the electrode 158.

Thereafter, the second substrate 170 is made to face the first substrate 110 in which the conductive ball layer is formed in the trench as described above, and then the organic electroluminescent device according to the second embodiment The organic light emitting device 301 according to the third embodiment of the present invention can be completed by proceeding the adhesion process mentioned in the manufacturing method of FIG.

Also in the method of manufacturing the organic electroluminescent device 301 according to the third embodiment of the present invention, the conductive balls 310 may be formed by the pressure applied when the first and second substrates 110 and 170 are attached together, The second electrode 158 and the hole transport layer 156c which are one of the components of the first and / or second emission assist layers 157a and 157b are finally squeezed and finally the surface of the first auxiliary wiring 148 As shown in Fig.

Therefore, even in the method of manufacturing the organic electroluminescent device 301 according to the third embodiment of the present invention, the first and / or the second organic electroluminescent layer 155 is formed between the second electrode 158 and the organic light emitting layer 155 in the trench tch, The first auxiliary wiring 148, the second electrode 158 and the second auxiliary wiring 175 are electrically connected to each other via the conductive balls 310 even if the second emission auxiliary layers 157a and 157b are further provided. So that a connected configuration is achieved.

The present invention is not limited to the above-described embodiments and modifications, and various modifications may be made without departing from the spirit of the present invention.

101: Organic electroluminescent device
110: first substrate
140: Protective layer
147: first electrode
147a, 147b: a lower layer (of the first electrode)
148: First auxiliary wiring
150: Bank
155: organic light emitting layer
158: Second electrode
170: second substrate
173: protrusion pattern
175: Second auxiliary wiring
E: Organic light emitting diode
P: pixel area

Claims (18)

A first substrate on which a display region having a plurality of pixel regions is defined;
A first electrode formed on each of the pixel regions on the first substrate;
A first auxiliary wiring formed in a boundary of the pixel region in a first direction;
A bank formed in the display region so as to overlap the edges of the first electrodes and surrounding the pixel regions, the trenches exposing the first sub-lines;
An organic light emitting layer formed on each of the first electrodes surrounded by the banks;
A second electrode formed on the entire surface of the organic emission layer and having a first thickness;
A second substrate facing the first substrate;
A protruding pattern extending in the first direction on a boundary of the pixel region on the inner surface of the second substrate and having a dam shape;
And a second auxiliary wiring formed on the protruded pattern and on the inner surface of the second substrate,
Wherein the first and second auxiliary wirings and the second electrode are electrically connected to each other within the trench.
The method according to claim 1,
And the protruding pattern is inserted into the trench.
The method according to claim 1,
Wherein a first light emitting auxiliary layer is formed between the first electrode and the organic light emitting layer and a second light emitting auxiliary layer is formed between the organic light emitting layer and the second electrode.
The method of claim 3,
Wherein the first and second light-emitting auxiliary layers are formed separately for each pixel region, and the first auxiliary wiring is in direct contact with the second electrode in the trench.
The method of claim 3,
At least one of the first and second light-emission-assisting layers is formed on the entire surface of the display region,
Wherein a portion of the second auxiliary wiring corresponding to an upper portion of the protruding pattern has a concavo-convex structure on the surface thereof, and the convex portion of the concavoconvex structure inside the trench forms the second electrode and the first and second light- And contact with the surface of the first electrode through the auxiliary layer.
The method of claim 3,
At least one of the first and second light-emission-assisting layers is formed on the entire surface of the display region,
A plurality of conductive balls contacting the surfaces of the first auxiliary wiring and the second auxiliary wiring and penetrating the first electrode and the second auxiliary light-emitting layer located under the second electrode, The organic electroluminescent device comprising:
The method according to claim 1,
Wherein the first auxiliary wiring is made of the same material as the first electrode,
The second auxiliary wiring is made of any one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, gold (Au), and silver Organic electroluminescent device.
The method according to claim 1,
The second electrode may be formed of any one of aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg), gold (Au), and aluminum magnesium alloy And is made of two or more materials,
Wherein the first thickness is 10 to 200 ANGSTROM.
The method according to claim 1,
The first electrode,
A gate and a data line crossing each other on the first substrate to define the pixel region;
A power supply wiring formed on the same layer on which the gate wiring or the data wiring is formed so as to be spaced apart from the wiring;
A switching thin film transistor provided in each pixel region and connected to the gate wiring and the data wiring; a driving thin film transistor connected to the power wiring and the switching thin film transistor;
A protective layer formed on the entire surface of the display region to cover the switching and driving thin film transistor and expose a drain electrode of the driving thin film transistor,
Wherein the first electrode is formed in contact with the drain electrode of the driving thin film transistor in the pixel region over the protective layer.
Forming a first electrode for each pixel region on a first substrate on which a display region having a plurality of pixel regions is defined and forming a first auxiliary wiring extending in a first direction at a boundary of the pixel region at the same time ;
Forming a bank having a trench that exposes the first sub-line, the sub-line overlaps the edge of each first electrode in the display region and surrounds each pixel region;
Forming an organic light emitting layer on each of the first electrodes surrounded by the banks;
Forming a second electrode having a first thickness on the entire surface of the display region above the organic light emitting layer;
Forming a protruding pattern extending in the first direction and having a dam shape on the inner surface of the second substrate facing the first substrate at the boundary of the pixel region;
Forming a second auxiliary wiring corresponding to the bank on the protruding pattern and the inner surface of the second substrate;
Attaching the first substrate and the second substrate so that the second auxiliary wiring and the second electrode are in contact with each other;
Wherein the first auxiliary wiring and the second electrode are electrically connected to each other within the trench.
11. The method of claim 10,
Wherein the first and second substrates are bonded together so that the protruding pattern is inserted into the trench.
11. The method of claim 10,
Wherein the first light-emitting auxiliary layer is formed on the first electrode before the organic light-emitting layer is formed, and the second light-emitting auxiliary layer is formed on the organic light-emitting layer before the second electrode is formed on the first electrode. Way.
13. The method of claim 12,
Wherein the first and second light-emitting auxiliary layers are formed so as to be separated from each other in each pixel region, so that the first auxiliary wiring is directly in contact with the second electrode in the trench.
13. The method of claim 12,
At least one of the first and second light-emission-assisting layers is formed on the entire surface of the display region,
Wherein a portion of the second auxiliary wiring corresponding to an upper portion of the protruding pattern is formed so as to have a concave-convex structure on its surface, and a convex portion of the concave- convex structure inside the trench is formed in the second electrode and the first and second 2 light-emission-assisting layer and is brought into contact with the surface of the first electrode.
13. The method of claim 12,
At least one of the first and second light-emission-assisting layers is formed on the entire surface of the display region,
A plurality of conductive balls contacting the surfaces of the first auxiliary wiring and the second auxiliary wiring and penetrating the first electrode and the second auxiliary light-emitting layer located under the second electrode, Wherein the organic light emitting layer is formed on the substrate.
16. The method of claim 15,
Wherein the plurality of conductive balls are formed by jetting onto the second electrode in the trench using the inkjet apparatus after forming the second electrode,
The conductive balls may join the first and second substrates so that the conductive balls may penetrate the second electrode and the first and second light emission supporting layers to form the surface of the first and second auxiliary wirings And the second electrode is in contact with the first electrode.
11. The method of claim 10,
The second auxiliary wiring is made of any one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, gold (Au), and silver ,
The second electrode may be formed of any one of aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg), gold (Au), and aluminum magnesium alloy And is made of two or more materials,
Wherein the first thickness is 10 to 200 ANGSTROM.
11. The method of claim 10,

Before forming the first electrode,
A gate line and a data line which are formed in the same layer on which the gate line or the data line is formed; And a drain contact hole covering the switching and driving thin film transistor and exposing a drain electrode of the driving thin film transistor on the entire surface of the display region. The switching thin film transistor is connected to the switching thin film transistor, And forming a protective layer having a first protective layer,
Wherein the first electrode is formed in the pixel region so as to be in contact with the drain electrode of the driving thin film transistor through the drain contact hole over the protective layer.

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