KR20100002041A - Luminescence dispaly panel and fabricating method of the same - Google Patents

Abstract

PURPOSE: A light emitting display panel and a manufacturing method thereof are provided to perform a high temperature process without damage to an organic layer by forming a sub electrode on a top substrate. CONSTITUTION: A first electrode(122) is formed on a bottom substrate(101). A band insulation film(124) is formed on the first electrode. An organic hole(140) of the bank insulation film exposes the first electrode. An organic layer(126) is formed on the first electrode exposed by the organic hole, and includes a light emitting layer. A second electrode(128) is formed on the organic layer with a thin film shape. A sub electrode(132) is formed on a top substrate, and is connected to the second electrode. Thickness of the second electrode is thinner than at least one among the first electrode and the sub electrode.

Description

A light emitting display panel and a manufacturing method therefor {LUMINESCENCE DISPALY PANEL AND FABRICATING METHOD OF THE SAME}

The present invention relates to a light emitting display panel and a method of manufacturing the same that can be manufactured without damaging the organic layer during the manufacturing process.

Video display devices that realize various information as screens are the core technologies of the information and communication era, and are developing in a direction of thinner, lighter, portable and high performance. As a flat panel display device that can reduce the weight and volume, which is a disadvantage of the cathode ray tube (CRT), an organic light emitting display device (OLED), which displays an image by controlling the amount of light emitted from the organic light emitting layer, has been in the spotlight. OLED is a self-luminous device using a thin light emitting layer between the electrodes has the advantage that it can be thinned like a paper.

In an active matrix OLED, pixels consisting of three color (R, G, B) sub-pixels are arranged in a matrix to display an image. Each sub pixel includes an organic electroluminescent (OEL) cell and a cell driver for independently driving the OEL cell.

The OEL cell is composed of a first electrode connected to the cell driver, an organic layer formed on the first electrode, and a second electrode formed on the organic layer.

The cell driver includes an at least two thin film transistors and a storage capacitor connected between a gate line for supplying a scan signal, a data line for supplying a video data signal, and a common power supply line for supplying a common power signal to drive an OEL cell. do.

Since the second electrode of the conventional OEL cell is deposited by a sputtering method, it damages the organic layer located below the second electrode. As a result, the damaged organic layer is degraded in luminous efficiency, and thus, image degradation such as a black point or dark spot occurs in an area that implements an image through the damaged organic layer.

In addition, the second electrode formed on the organic layer has a problem that it is difficult to deposit at a high temperature in consideration of damage of the organic layer.

In order to solve the above problems, the present invention is to provide a light emitting display panel and a method of manufacturing the same that can be manufactured without damaging the organic layer during the manufacturing process.

In order to achieve the above technical problem, the light emitting display panel according to the present invention includes a first electrode formed on the lower substrate; An organic layer formed on the first electrode and including a light emitting layer; A second electrode in the form of a thin film formed on the organic layer; An auxiliary electrode formed on the upper substrate facing the lower substrate so as to be connected to the second electrode, wherein the second electrode is formed to have a thickness thinner than at least one of the first electrode and the auxiliary electrode. do.

In order to achieve the above technical problem, a method of manufacturing a light emitting display panel according to the present invention comprises the steps of forming a first electrode on the lower substrate; Forming an organic layer including a light emitting layer on the first electrode; Forming a second electrode in the form of a thin film on the organic layer; Forming an auxiliary electrode on the upper substrate facing the lower substrate; And bonding the upper substrate and the lower substrate to contact the second electrode and the auxiliary electrode, wherein the second electrode is thinner than at least one of the first electrode and the auxiliary electrode. do.

The light emitting display panel and the method of manufacturing the same according to the present invention are formed in the organic layer by forming the second electrode formed on the organic layer by a thermal evaporation method, a sputtering method or a combination thereof in the form of a thin film having a thickness that does not affect the organic layer. Damage can be prevented.

In addition, the light emitting display panel and the method of manufacturing the same according to the present invention can form a secondary electrode connected to the second electrode on the upper substrate to enable a high temperature process without considering the organic layer, and to enable a high temperature process to improve film characteristics. Can be.

In addition, the light emitting display panel and the method of manufacturing the same according to the present invention prevent the step of the center portion and the outer portion of the light emitting display panel by contact spacers that maintain the cell gap between the upper substrate and the lower substrate, thereby preventing image quality defects such as Newton rings. can do. In addition, since the contact spacer contacts the shadow mask when the organic layer is formed, damage to the organic layer may be minimized.

Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings and embodiments.

1 is an equivalent circuit diagram of one pixel of a light emitting display panel according to the present invention.

One pixel of the light emitting display panel illustrated in FIG. 1 includes a switch thin film transistor T1 connected to a gate line GL and a data line DL, a switch thin film transistor T1, a power supply line PL, and an OEL cell. A connected driving thin film transistor T2, a storage capacitor C connected between the power supply line PL and a drain electrode of the switch thin film transistor T1, and an OEL cell connected to the driving thin film transistor T2. .

The gate electrode of the switch thin film transistor T1 is connected to the gate line GL, the source electrode is connected to the data line DL, and the drain electrode is connected to the gate electrode and the storage capacitor C of the driving thin film transistor T2. . The source electrode of the driving thin film transistor T2 is connected to the power supply line PL and the drain electrode is connected to any one of the electrodes of the OEL cell. The storage capacitor C is connected between the power line PL and the gate electrode of the driving thin film transistor T2.

The switch thin film transistor T1 is turned on when a scan pulse is supplied to the gate line GL, and supplies the data signal supplied to the data line DL to the gate electrode of the storage capacitor C and the driving thin film transistor T2. do. The driving thin film transistor T2 controls the amount of light emitted from the OEL cell by controlling the current I supplied from the power line PL to the OEL cell in response to the data signal supplied to the gate electrode. Also, even when the switch thin film transistor T1 is turned off, the driving thin film transistor T2 supplies a constant current I until the data signal of the next frame is supplied by the voltage charged in the storage capacitor C. Keep the cell luminescent.

As shown in FIG. 2, the driving thin film transistor T2 is provided with a gate electrode 102 formed on the lower substrate 101, a gate insulating film 106 covering the gate electrode 102, and a gate insulating film 106 interposed therebetween. The ohmic contact layer 114 formed on the active layer 116 except for the channel portion for ohmic contact with the active layer 116 overlapping the gate electrode 102 to form a channel and the source electrode 110 and the drain electrode 108. And a source electrode 110 and a drain electrode 108 facing each other with the channel portion interposed therebetween. In addition, an inorganic passivation layer 104 formed of an inorganic insulating material and an organic passivation layer 118 formed of an organic insulating material may be formed on the driving thin film transistor T2 formed on the lower substrate 101.

The OEL cell includes a bank insulating layer 124 on which an inorganic passivation layer 104 covering the driving thin film transistor and an organic passivation layer 118 are formed on the organic passivation layer 118 and an organic hole 140 exposing the first electrode 122. And an organic layer 126 including a light emitting layer formed on the first electrode 122 exposed through the organic hole 140, a second electrode 128 formed on the organic layer 126, and an upper substrate 130. The auxiliary electrode 132 is formed.

The first electrode 122 is formed of an opaque conductive material such as aluminum (Al) as a cathode.

The organic layer 126 may include an electron injection layer (EIL) 210, an electron transport layer (ETL) 208, an emission layer 206, and a hole transport layer (Hole Transport) on the first electrode 122. A layer (HTL) 204 and a hole injection layer (HIL) 202 are sequentially stacked and formed. The emission layer 206 returns light having a specific wavelength to the upper substrate as excitons generated by recombination of electrons from the first electrode 122 and holes from the auxiliary electrode 132 and the second electrode 128 return to the ground state. 130 to emit light in the entire direction.

The second electrode 128 is formed in the form of a thin film on the organic layer 126. The second electrode 128 is formed in at least one layer structure using a material such as TCO (Transparent Conductive Oxide (TCO)) or an opaque conductive material, or a multilayer structure in combination thereof. The second electrode 128 is thermally deposited on the organic layer 126 so as not to affect the organic layer 126, or a sputtering method or a combination thereof is used. In this case, even if the second electrode 128 is deposited on the organic layer 126 by a sputtering method, the second electrode 128 is formed in a thin film shape that does not affect the organic layer 126 so that the organic layer 126 is not damaged. In addition, the opaque conductive material included in the second electrode 128 is formed in the form of a thin film that can transmit light generated in the organic layer 126. The second electrode 128 has a thickness thinner than at least one of the first electrode 122 and the auxiliary electrode 132, and is formed to a thickness of about 10 to 500 μm.

The auxiliary electrode 132 is formed on the upper substrate 130 to be connected to the second electrode 128 formed on the organic layer 126. The auxiliary electrode 132 is formed of at least one layer of a TCO material such as indium tin oxide (ITO) or indium zinc oxide (IZO). Alternatively, the upper substrate 130 may be stacked with a transparent conductive material and a thin metal layer to form a multilayer structure. The opaque metal layer in the form of a thin film included in the auxiliary electrode 132 is thick enough to transmit light and is formed to a thickness of about 10 to 500 kPa. As described above, when the auxiliary electrode 132 is formed of at least two layers, the contact resistance may be reduced when the auxiliary electrode 132 contacts the second electrode 128.

In addition, the auxiliary electrode 132 may be directly stacked on the upper substrate 130, or as shown in FIG. 4, a passivation layer 132 may be formed between the upper substrate 130 and the auxiliary electrode 132. As shown in FIG. 5, an interface between each of the auxiliary electrode 132 and the second electrode 128 in contact with the auxiliary electrode 132 may be surface-treated with plasma, UV, or the like to form a concave-convex shape. . The recessed portion of the auxiliary electrode 132 is in contact with the convex portion of the second electrode 128, and the convex portion of the auxiliary electrode 132 is in contact with the recessed portion of the second electrode 128. Therefore, the auxiliary electrode 132 has a large contact area with the second electrode 128 to reduce the contact resistance of the second electrode 128 and the adhesive force with the second electrode 128 when the upper and lower plates 101 and 130 are vacuum-bonded. This is improved. In addition, the work function of the auxiliary electrode 132 is increased by the surface treatment, thereby improving electrical characteristics.

6A through 6H are cross-sectional views illustrating a method of manufacturing a light emitting display panel in accordance with a first embodiment of the present invention.

Referring to FIG. 6A, a gate metal pattern including a gate electrode 102 and a gate line is formed on the lower substrate 101.

Specifically, the gate metal layer is deposited on the lower substrate 101 through a deposition method such as sputtering. The gate metal layer is used as aluminum (Al), aluminum alloy, aluminum-neodymium (AlAd), copper (Cu), titanium (Ti), chromium (Cr), or the like. The gate metal layer is patterned through a photolithography process and an etching process to form a gate metal pattern including the gate line and the gate electrode 102.

Referring to FIG. 6B, a gate insulating layer 106 is formed on a lower substrate 101 on which a gate electrode pattern is formed, and a semiconductor pattern 112 including an active layer 116 and an ohmic contact layer 114 is formed.

Specifically, the gate insulating layer 106 is formed by depositing an inorganic insulating material on the lower substrate 101 on which the gate metal pattern is formed by deposition of a plasma enhanced chemical vapor deposition (PECVD). By the same deposition method as the gate insulating film, an amorphous silicon layer and an amorphous silicon layer doped with impurities are sequentially formed. Subsequently, the semiconductor pattern 112 including the active layer 116 and the ohmic contact layer 114 is formed by panning the amorphous silicon layer and the doped amorphous silicon layer through a photolithography process and an etching process. As the gate insulating layer 106, an inorganic insulating material such as silicon nitride (SiOx), silicon oxide (SiNx), or the like is used.

Referring to FIG. 6C, a source / drain electrode pattern including a source electrode 110 and a drain electrode 108 is formed on the gate insulating layer 106 on which the semiconductor pattern 112 is formed.

Specifically, the source / drain metal layer is formed on the gate insulating layer 106 on which the semiconductor pattern 112 is formed by a deposition method such as sputtering. As the source / drain metal layer, molybdenum (Mo), molybdenum tungsten (MoW), copper (Cu), or the like is used. The source / drain metal layer is patterned by a photolithography process and an etching process to form a source / drain electrode pattern including the source electrode 110 and the drain electrode 108. Subsequently, the ohmic contact layer 114 exposed between the two electrodes is removed using the source electrode 110 and the drain electrode 108 as a mask so that the active layer 116 is exposed.

 Referring to FIG. 6D, inorganic and organic passivation layers 104 and 118 including contact holes 120 are formed on the gate insulating layer 106 on which the source / drain electrode patterns are formed.

Specifically, the inorganic protective film 104 is formed on the gate insulating film 106 on which the source / drain electrode patterns are formed by a deposition method such as PECVD. The organic protective film 118 is formed on the inorganic protective film by a method such as spin coating or spinless coating. In addition, the contact holes 120 are formed by patterning the inorganic and organic passivation layers 104 and 118 using a photolithography process and an etching process. Here, an inorganic insulating material such as the gate insulating film 106 is used as the inorganic protective film 104, and an organic insulating material such as acrylic is used as the organic protective film 118.

Referring to FIG. 6E, the first electrode 122 is formed on the organic passivation layer 118.

Specifically, the first electrode 122 is formed on the organic protective layer 118 by an opaque conductive material such as aluminum (Al) by a deposition method such as sputtering or the like. The first electrode 122 is connected to the drain electrode 108 of the thin film transistor through the contact hole 120.

Referring to FIG. 6F, a bank insulating layer 124 including an organic hole 140 is formed on the lower substrate 101 on which the first electrode 122 is formed.

In detail, the bank insulating layer 124 is formed by coating the entire photosensitive organic insulating material on the lower substrate 101 on which the first electrode 122 is formed through a coating method such as spinless or spin coating. The bank insulating layer 124 is patterned by a photolithography process and an etching process to form an organic hole 140 exposing the first electrode 122.

Referring to FIG. 6G, the organic layer 126 and the second electrode 128 are sequentially formed on the lower substrate 101 on which the bank insulating layer 124 including the organic holes 140 is formed.

In detail, the organic layer 126 including the electron injection layer EIL, the electron transport layer ETL, the light emitting layer, the hole transport layer HTL, and the hole injection layer HIL is thermally deposited or sputtered on the first electrode 122. It is formed sequentially by the method or a combination thereof. Thereafter, the second electrode 128 is formed on the lower substrate 101 on which the organic layer 126 is formed.

The second electrode 128 may be formed in at least one layer using a transparent conductive material or a metal material in the same manner as the organic layer 126, or may be formed in a multilayer structure using the transparent conductive material and a metal material. The thickness of the second electrode 128 is formed to a thickness such that the light generated in the organic layer 126 can pass through, without affecting the organic layer 126 by a deposition process, the thickness of about 10 ~ 500Å.

Referring to FIG. 6H, the upper substrate 130 on which the auxiliary electrode 132 is formed, the thin film transistor, the first electrode 122, the organic layer 126, and the lower substrate 101 on which the second electrode 128 are formed are vacuum-bonded. The light emitting display panel is formed.

In detail, the auxiliary electrode 132 is formed on the upper substrate 130 by a deposition method such as sputtering of at least one transparent conductive layer. Indium tin oxide (ITO), indium zinc oxide (IZO), or the like is used as the transparent conductive material. In addition, the upper substrate 101 may be formed of a plurality of conductive layers sequentially stacked with a transparent conductive material, a thin metal layer, and a transparent conductive material. In addition, the surface characteristics of the auxiliary electrode 132 may be treated with plasma, UV, or the like to increase the work function of the auxiliary electrode 132, thereby improving electrical characteristics. The light emitting display panel is formed by vacuum bonding the upper substrate 130 on which the auxiliary electrode 132 is formed, the thin film transistor, the first electrode 122, the organic layer 126, and the lower substrate 101 on which the second electrode 128 is formed. do.

As described above, the light emitting display panel and the method of manufacturing the same according to the first exemplary embodiment of the present invention can form the auxiliary electrode 132 on the organic layer 126 without damaging the organic layer, thereby preventing deterioration of image quality. In addition, the light emitting display panel and the method of manufacturing the same according to the first exemplary embodiment of the present invention may include the auxiliary electrode 132 and the passivation layer 134 on the upper substrate 130 without considering the damage of the organic layer 126 formed on the lower substrate. Since it can be formed by depositing at a high temperature on the ()) it is possible to improve the characteristics of the organic layer 126, the auxiliary electrode 132 and the protective film 134.

7 is a diagram illustrating an organic layer of a light emitting display panel according to a second embodiment of the present invention.

Since the light emitting display panel according to the second embodiment of the present invention is the same except for the OEL cell of the light emitting display panel according to the first embodiment, description thereof will be omitted.

The OEL cell of the light emitting display panel according to the second exemplary embodiment of the present invention exposes the first electrode 122 and the first electrode 122 on the inorganic passivation layer 104 and the organic passivation layer 118 covering the driving thin film transistor. A bank insulating layer 124 on which the organic holes 140 are formed, an organic layer 126 including a light emitting layer formed on the first electrode 122 exposed through the organic holes 140, and a second layer formed on the organic layer 126. And an auxiliary electrode 132 formed on the upper substrate 130.

The first electrode 122 is formed of a metal material and a transparent conductive material as an anode. For example, a metal material having a high reflectance such as aluminum (Al), silver (Ag), molybdenum (Mo), and a transparent material such as ITO It can be formed as.

The organic layer 126 is formed by sequentially stacking the hole injection layer 202, the hole transport layer 204, the light emitting layer 206, the electron transport layer 208, and the electron injection layer 210 on the first electrode 122. . In the light emitting layer included in the organic layer 126, electrons from the auxiliary electrode 132 and the second electrode 128 and the excitons generated by recombination of holes from the first electrode 122 are returned to the bottom state. The light of a specific wavelength is emitted to the front of the upper substrate 130.

The auxiliary electrode 132 is formed on the upper substrate 130, and the auxiliary electrode 132 formed on the upper substrate 130 is connected by the second electrode 128 formed on the organic layer 126. The second electrode 128 is formed in the form of a thin film on the organic layer 126. The second electrode 128 may be formed of at least one layer of a transparent conductive material such as TCO, a metal material such as aluminum-silver (AlAg) alloy, or the like, or a double layer of the transparent conductive material and the metal material. have. The opaque metal layer in the form of a thin film included in the auxiliary electrode 132 is formed to have a thickness enough to transmit light and a thickness of about 10 to 500 kPa.

The second electrode 128 is formed by a thermal evaporation process, a sputtering method, or a combination thereof in the deposition process as a cathode, and is formed by the deposition process in the case of forming the transparent conductive material or the metal material as in the first embodiment. The thickness will not affect the organic layer, for example, is formed to a thickness of about 10 ~ 500Å.

In addition, the auxiliary electrode 132 is formed in the same manner as the first embodiment as shown in Figure 3 and 4 will have the same effect.

8 is a cross-sectional view of a light emitting display panel according to a third embodiment of the present invention.

Since the light emitting display panel according to the third exemplary embodiment of the present invention is the same except for the OEL cell of the light emitting display panel according to the first exemplary embodiment, the description thereof will be omitted.

Referring to FIG. 8, the first electrode 122 of the light emitting display panel according to the third exemplary embodiment of the present invention is formed of a transparent conductive material as an anode, for example, ITO, ZTO, IZO, or the like.

The organic layer 126 is formed by sequentially stacking a hole injection layer HIL, a hole transport layer HTL, a light emitting layer, an electron transport layer ETL, and an electron injection layer EIL on the first electrode 122. In the light emitting layer included in the organic layer 126, electrons from the auxiliary electrode 132 and the second electrode 128 and exciton generated by recombination of holes from the first electrode 122 are returned to the ground state. The light of the wavelength is emitted back to the lower substrate 101 direction.

The auxiliary electrode 132 is formed of at least one layer of an opaque conductive material such as aluminum (Al), copper (Cu), magnesium (Mg), silver (Ag), etc. on the upper substrate 130, and the upper substrate 130. The auxiliary electrode 132 formed thereon is connected to the second electrode 128 formed on the organic layer 126.

The second electrode 128 is formed in the form of a thin film on the organic layer 126. The second electrode 128 may be formed of at least one layer of a transparent conductive material, such as TCO, or a metal material in a thin film form, or may be formed of a double layer of a transparent conductive material and a metal material, as in the first embodiment. Formed to have the same effect.

In addition, the auxiliary electrode 132 may be formed on the upper substrate 130 on which the passivation layer 134 is formed, as shown in FIGS. 4 and 5, or may be formed in an uneven shape.

9 is a schematic cross-sectional view of a light emitting display panel according to a fourth embodiment of the present invention.

The light emitting display panel according to the fourth exemplary embodiment of the present invention is made of an inorganic insulating material such as the inorganic protective film 104 between the first electrode 122 and the organic protective layer 118 as compared to the light emitting display panel of the first exemplary embodiment. The same components are provided except that the buffer layer 152 and the contact spacer 142 and the bus electrode 138 are formed. Therefore, detailed description of the same components will be omitted.

The contact spacer 142 illustrated in FIG. 9 is formed on the bank insulating layer 124. Since the contact spacer 142 maintains a constant cell gap between the upper substrate 130 and the lower substrate 101, the contact spacer 142 prevents a step difference between the outer and center portions of the light emitting display panel. On the other hand, in the conventional light emitting display panel that maintains the cell gap with the sealant, the cell gap becomes narrower toward the center portion than the outer portion where the sealant is formed, and a step is generated between the outer portion and the center portion of the light emitting display panel. Due to such a step, in the conventional light emitting display panel, a poor image quality such as a wave of Newton's ring phenomenon occurs in the center except for the outer portion where the sealant is formed. Since it is not generated, it is possible to prevent poor image quality such as a Newton ring phenomenon.

In addition, the contact spacer 142 contacts the shadow mask for forming each of the first organic related layer 148, the light emitting layer 146, and the second organic related layer 150. On the other hand, in a conventional light emitting display panel having no contact spacer, a shadow mask for forming each of the first organic related layer, the light emitting layer, and the second organic related layer may be formed of the first electrode, the first organic related layer, and the light emitting layer. Contact. Therefore, in the conventional light emitting display panel, the first organic related layer positioned in the light emitting region and those layers in which scratches due to shadow masks are generated in the light emitting layer are damaged to deteriorate the image quality, whereas in the light emitting display panel of the present invention, the non-light emitting region Since scratches or the like are generated in the contact spacer 142 positioned at, the image quality is not affected.

The second electrode 128 formed on the contact spacer 142 is connected to the auxiliary electrode 132 formed on the upper substrate 130. The auxiliary electrode 132 is formed of at least one layer of TCO material or a multi-layer structure of an opaque metal layer of TCO and a thin film. The opaque metal layer in the form of a thin film included in the auxiliary electrode 132 is formed to have a thickness enough to transmit light and a thickness of about 10 to 500 kPa. The bus electrode 138 overlapping the contact spacer 142 is formed on the auxiliary electrode 132 or the upper substrate 130. The bus electrode 138 is formed of a metal having high conductivity to compensate for the resistance of at least one of the second electrode 128 and the auxiliary electrode 132, thereby making contact between the auxiliary electrode 132 and the second electrode 128. The resistance is relatively low.

An organic layer including a first organic related layer 148, a light emitting layer 146, and a second organic related layer 150 is formed between the second electrode 128 and the first electrode 122.

Since the first and second organic related layers 148 and 150 are formed through the shadow mask exposing the remaining area except the outer portion of the lower substrate 101, the first and second organic related layers 148 and 150 are formed on the entire lower substrate 101 on which the contact spacers 142 are formed. When the first electrode 122 is a cathode and the second electrode 128 is an anode, the first organic related layer 148 is formed of an electron related layer for providing electrons to the light emitting layer 146, and the second organic related layer. The layer 150 is formed of a hole related layer that provides holes to the light emitting layer 146. Alternatively, when the first electrode 122 is an anode and the second electrode 128 is a cathode, the first organic related layer 148 is formed as a hole related layer that provides holes to the light emitting layer 146, and the second The organic related layer 150 is formed of an electron related layer that provides electrons to the light emitting layer 146.

The light emitting layer 146 is formed through the shadow mask that exposes the light emitting area of each pixel, and thus is formed in the light emitting area of each pixel. The light emitting layer 146 generates light having a specific wavelength as the excitons generated by recombination of electrons and holes from the first and second organic related layers (! 48,150) return to the ground state. This light is emitted in full direction toward the upper substrate 130.

Meanwhile, the upper substrate 130 and the lower substrate 101 are formed of a sealant 152 made of epoxy or frit, as shown in FIG. 10. Since the frit sealant (! 52) has a higher adhesive strength with each of the upper substrate 130 and the lower substrate 101 than the sealant 152 of epoxy material, the frit sealant may protect the light emitting display panel without a getter for preventing moisture.

The sealant 152 of the frit material is applied to at least one of the upper substrate 130 and the lower substrate 101 and then cured by heat or light. As the laser is irradiated to the hardened frit sealant 152, the sealant 152 of the frit material is melted and solidified to bond the upper substrate 130 and the lower substrate 101 to each other.

When the height of the sealant 152 of the frit material is higher than the cell gap of the light emitting display panel, the groove 156 is formed in at least one of the upper substrate 130 and the lower substrate 101 as shown in FIG. 10. The cell gap of the frit sealant 152 and the light emitting display panel may be formed. Accordingly, the light emitting display panel according to the present invention can prevent poor image quality such as a Newton ring phenomenon in which a wave pattern appears in the center portion due to a step lower in the center portion than the outer portion where the sealant is formed in the conventional light emitting display panel.

Meanwhile, the light emitting display panel and a method of manufacturing the same according to the present invention have been described using a structure in which red, green, and blue light is generated for each pixel in the light emitting layer as an example. The present invention is also applicable to a light emitting display panel having a color filter for generating a light emitting display panel.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention. It will be evident to those who have knowledge of.

1 is an equivalent circuit diagram of one pixel of a light emitting display panel according to a first exemplary embodiment of the present invention.

2 is a cross-sectional view of a light emitting display panel according to a first embodiment of the present invention.

3 is a cross-sectional view for describing an organic layer of the light emitting display panel illustrated in FIG. 2 in detail.

4 is a cross-sectional view illustrating another exemplary embodiment of the second electrode illustrated in FIG. 2.

FIG. 5 is a cross-sectional view illustrating still another embodiment of the second electrode illustrated in FIG. 2.

6A through 6H are cross-sectional views illustrating a method of manufacturing a light emitting display panel in accordance with a first embodiment of the present invention.

7 is a cross-sectional view illustrating an organic layer of a light emitting display panel according to a second exemplary embodiment of the present invention.

8 is a cross-sectional view of a light emitting display panel according to a third exemplary embodiment of the present invention.

9 is a schematic cross-sectional view of a light emitting display panel according to a fourth embodiment of the present invention.

10 is a cross-sectional view illustrating a sealant for bonding an upper substrate and a lower substrate of the light emitting display panels according to the first to fourth embodiments of the present invention.

<Description of Symbols for Main Parts of Drawings>

101: lower substrate 102: gate electrode

104: inorganic protective film 106: gate insulating film

108: drain electrode 110: source electrode

112: semiconductor pattern 118: organic protective film

120 contact hole 122 first electrode

124: bank insulating film 126: organic layer

128: second electrode 130: upper substrate

132: auxiliary electrode 134: protective film

138: bus electrode 142: contact spacer

146 light emitting layer 148,150 organic related layer

152: sealant 154: buffer layer

156: home

Claims (19)

A first electrode formed on the lower substrate; An organic layer formed on the first electrode and including a light emitting layer; A second electrode in the form of a thin film formed on the organic layer; An auxiliary electrode formed on the upper substrate facing the lower substrate so as to be connected to the second electrode; The second electrode is thinner than at least one of the first electrode and the auxiliary electrode. The method of claim 1, At least one of the first electrode, the second electrode, and the auxiliary electrode may be an opaque conductive material having high reflectivity such as aluminum (Al), silver (Ag), copper (Cu), magnesium (Mg), and molybdenum (Mo). At least one layer, or formed of at least one layer of a transparent conductive material such as indium tin oxide (ITO), Indum Zinc Oxide (IZO), or formed of a multilayer structure in which an opaque conductive material and a transparent conductive material are laminated Luminous display panel. The method of claim 2, The opaque conductive material included in the auxiliary electrode and the second electrode are formed to have a thickness of about 10 to 500 Å. The method of claim 1, And a passivation layer formed between the upper substrate and the second electrode. The method of claim 1, The auxiliary electrode and the second electrode are formed in a concave-convex shape. The method of claim 1, And a bus electrode formed on the upper substrate or the auxiliary electrode to be connected to the auxiliary electrode. The method of claim 1, Further provided with a contact spacer formed between the upper substrate and the lower substrate to maintain a cell gap between the upper substrate and the lower substrate, The auxiliary electrode is in contact with a second electrode formed on the contact spacer. The method of claim 1, And a sealant made of a frit material for bonding the upper substrate and the lower substrate together. The method of claim 8, And a groove formed in at least one of the upper substrate and the lower substrate in a region corresponding to the sealant of the frit material. Forming a first electrode on the lower substrate; Forming an organic layer including a light emitting layer on the first electrode; Forming a second electrode in the form of a thin film on the organic layer; Forming an auxiliary electrode on the upper substrate facing the lower substrate; Bonding the upper substrate and the lower substrate to contact the second electrode and the auxiliary electrode; The second electrode may have a thickness thinner than at least one of the first electrode and the auxiliary electrode. The method of claim 10, At least one of the first electrode, the second electrode, and the auxiliary electrode may be an opaque conductive material having high reflectivity such as aluminum (Al), silver (Ag), copper (Cu), magnesium (Mg), and molybdenum (Mo). At least one layer, or formed of at least one layer of a transparent conductive material such as indium tin oxide (ITO), Indum Zinc Oxide (IZO), or formed of a multilayer structure in which an opaque conductive material and a transparent conductive material are laminated The manufacturing method of the light emitting display panel. The method of claim 11, The opaque conductive material and the second electrode included in the auxiliary electrode are formed to have a thickness of about 10 to 500 kV. The method of claim 10, Preparing the upper substrate And forming a passivation layer between the upper substrate and the second electrode. The method of claim 10, The auxiliary electrode and the second electrode are formed in a concave-convex shape manufacturing method of the light emitting display panel. The method of claim 10, Preparing the upper substrate And forming a bus electrode formed of a conductive material on the upper substrate or the auxiliary electrode to be connected to the auxiliary electrode. The method of claim 10, Forming a contact spacer between the upper substrate and the lower substrate to maintain a cell gap between the upper substrate and the lower substrate, The auxiliary electrode is in contact with a second electrode formed on the contact spacer. The method of claim 10, The upper substrate and the lower substrate are bonded by a sealant made of a frit material. The method of claim 17, And forming a groove in at least one of the upper substrate and the lower substrate in a region corresponding to the sealant of the frit material. The method of claim 10, And the organic layer and the second electrode are formed by a thermal deposition method, a sputtering method, or a combination method of a thermal deposition method and a sputtering method.

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