KR101493222B1 - Fabricating method of luminescence dispaly panel - Google Patents

Abstract

The present invention provides a method of manufacturing a light emitting display panel capable of minimizing changes in the manufacturing process and preventing permeation of water or oxygen and preventing impact and peeling.

A method of manufacturing a light emitting display panel according to the present invention includes the steps of forming a light emitting cell on a lower substrate, forming an organic insulating layer, a light curing agent layer, Forming a seal pattern portion having at least one surface treatment film on the upper substrate; and attaching the upper substrate to correspond to the lower substrate.

A seal pattern portion, an upper substrate, moisture

Description

TECHNICAL FIELD [0001] The present invention relates to a fabrication method of a light emitting display panel,

The present invention provides a method of manufacturing a light emitting display panel capable of minimizing changes in the manufacturing process and preventing permeation of water or oxygen and preventing impact and peeling.

The image display device that realizes various information on the screen is a core technology of the information communication age and it is becoming thinner, lighter, more portable and higher performance. An organic light emitting display (OLED) for displaying an image by controlling the amount of light emitted from the organic light emitting layer by using a flat panel display capable of reducing weight and volume, which is a disadvantage of a cathode ray tube (CRT) OLED is a self-luminous device using a thin light emitting layer between electrodes and has the advantage of being thin like a paper.

In the active matrix OLED (AMOLED), pixels composed of three color (R, G, B) sub-pixels are arranged in a matrix form to display an image. Each sub-pixel includes an organic electroluminescent (OEL) cell and a cell driver for independently driving the OEL cell. The cell driver includes at least two thin film transistors and a storage capacitor connected between a gate line for supplying a scan signal, a data line for supplying a video data signal, and a common power supply line for supplying a common power supply signal, The electrode is driven. The OEL cell includes a pixel electrode connected to a cell driving unit, an organic layer on the pixel electrode, and a cathode on the organic layer. At this time, the light emitting display panel is formed by attaching the metal cap and the lower substrate on which the thin film transistor and the OEL cell are formed. A getter is formed on the metal cap to prevent moisture (H ₂ O) and oxygen (O ₂ ) from permeating from the outside. However, the light emitting display panel using the metal cap is thickened by the metal cap, and the front emission is not achieved by the metal, and the aperture ratio is limited due to the rear emission. Accordingly, there is a need for a method of fabricating a light emitting display panel capable of thinning the light emitting display panel and emitting light over the entire surface, and preventing moisture and oxygen penetration while minimizing changes in the process.

In order to solve the above problems, the present invention provides a method of manufacturing a light emitting display panel capable of minimizing changes in the manufacturing process and preventing moisture and oxygen from permeating and preventing impact and peeling.

According to an aspect of the present invention, there is provided a method of fabricating a light emitting display panel, including: forming a light emitting cell on a lower substrate; forming an organic insulating film around the active region of the lower substrate, Forming a seal pattern portion having at least one surface treatment film on at least one barrier layer, a light curing agent layer, and attaching the upper substrate to correspond to the lower substrate.

According to an aspect of the present invention, there is provided a method of manufacturing a light emitting display panel, including: forming a light emitting cell on a lower substrate; forming a moisture absorbent film, a protective film, Forming a seal pattern portion including a photo-curing agent layer; and forming a groove on an upper substrate at a position where the seal pattern portion is formed.

A method of manufacturing a light emitting display panel according to the present invention includes forming an organic insulating layer, a light curing agent layer, at least one barrier layer, and an actual patterned portion having at least one surface treatment film along a periphery of an active region of a lower substrate on which a thin film transistor and an OEL cell are formed The moisture and oxygen from the outside can be cut off during the laminating process, and the entire luminescence can be performed, thereby increasing the aperture ratio. The at least one barrier layer is formed of an inorganic insulating film or a metal inorganic insulating film.

Therefore, the organic insulating layer and the barrier layer included in the seal pattern portion can be formed by using materials different from each other by using the equipment used in forming the thin film transistor substrate, so that the process change can be minimized and the process time is not increased accordingly.

In addition, it is possible to further maximize moisture and oxygen blocking from outside by forming a groove in a position corresponding to the seal pattern portion in the upper substrate of the present invention and forming a moisture absorbent in the groove.

Further, the light emitting display panel and the manufacturing method thereof according to the present invention form a seal pattern portion as a moisture absorbent film, a protective film, and a photo-curing agent layer. At this time, the moisture absorbent film and the protective film are formed of a film capable of blocking moisture and oxygen, and have a transmittance of 50 to 100%, whereby the entire surface can be emitted. When the lower substrate and the upper substrate are bonded together, there is no internal space such as voids inside the device, so that warping can be prevented when manufacturing a large area.

In addition, by forming a photo-curing agent layer, which is a polymer material, it is possible to prevent impact and peeling during the scribing and braking steps during the manufacturing process of the light-emitting display panel.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. 1 to 7C.

FIG. 1 is a perspective view illustrating a light emitting display panel according to a first embodiment of the present invention, and FIG. 2 is a sectional view of the light emitting display panel shown in FIG. 1. Referring to FIG.

Referring to FIGS. 1 and 2, the light emitting display panel includes an upper substrate 140 and a lower substrate 101 facing each other.

The upper substrate 140 faces the lower substrate 101 and is formed of a transparent material. It is preferable that the upper substrate 140 uses an insulating material such as glass or polymer.

The lower substrate 101 includes a cell driving unit 100 connected to a gate line GL, a data line DL and a power source line PL and an OEL cell connected to the cell driving unit 100 and the power source line PL. .

The cell driver 100 includes a switch thin film transistor T1 connected to the gate line GL and the data line DL and a switch thin film transistor T1 connected between the switch thin film transistor T1 and the power source line PL, A thin film transistor T2 and a storage capacitor C connected between the power supply line PL and the drain electrode of the switch thin film transistor T1.

The gate electrode of the switch thin film transistor T1 is connected to the gate line GL, the source electrode thereof is connected to the data line DL and the drain electrode thereof is connected to the gate electrode of the driving TFT T2 and the storage capacitor C . The source electrode of the driving thin film transistor T2 is connected to the power supply line PL and the drain electrode is connected to the first electrode of the OEL cell. The storage capacitor C is connected between the power supply line PL and the gate electrode of the driving thin film transistor T2.

The switch thin film transistor T1 is turned on when a scan pulse is supplied to the gate line GL to supply the data signal supplied to the data line DL to the gate electrode of the storage capacitor C and the drive thin film transistor T2 do. The driving thin film transistor T2 controls the amount of light emitted from the OEL cell by controlling the current I supplied from the power source line PL to the OEL cell in response to the data signal supplied to the gate electrode. Even if the switch thin film transistor T1 is turned off, the driving thin film transistor T2 supplies the constant current I until the data signal of the next frame is supplied by the voltage charged in the storage capacitor C, Allowing the cell to maintain luminescence.

The driving thin film transistor T2 includes a gate electrode 102 formed on the lower substrate 101 and a gate insulating film 106 covering the gate electrode 102 and a gate insulating film 106 sandwiched therebetween An active layer 114 which overlaps the gate electrode 102 and forms a channel between the source electrode 104 and the drain electrode 110 and a channel portion for ohmic contact with the source electrode 104 and the drain electrode 110 And an ohmic contact layer 116 formed on the active layer 114 excluding the active layer 114. In addition, an inorganic protective film 108 formed of an inorganic insulating material and an organic protective film 120 formed of an organic insulating material may be formed on the driving thin film transistor formed on the lower substrate 101.

The OEL cell includes an inorganic protective film 108 covering the driving thin film transistor, a pixel electrode 124 on the organic protective film 120, a bank insulating film 126 exposing the pixel electrode 124, A first electrode 130 formed on the exposed pixel electrode 124, an organic layer 132 including a light emitting layer formed on the first electrode 130, and a second electrode 134 formed on the organic layer 132 .

At this time, the pixel electrode 124 may be formed of a transparent material such as indium tin oxide (ITO), indium zinc oxide (IZO), or the like. The first electrode 130 is formed of a metal material and a transparent conductive material as an anode, and may be formed of a metal material having a high reflectance such as aluminum (Al). The second electrode 134 may be formed of an aluminum-silver (AlAg) alloy or a transparent conductive material as a cathode.

Accordingly, the organic layer 132 may include a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer, an electron transport layer (ETL) And an electron injection layer (EIL). The light emitting layer included in the organic layer 132 recombines holes and electrons through the second electrode 134 through the first electrode 130. The generated excitons return to the ground state and light of a specific wavelength is emitted to the upper substrate 140).

The seal pattern portion is formed along the periphery of the active region of the lower substrate 101 and is formed of at least one barrier layer and a surface treatment film to bond the lower substrate 101 and the upper substrate 140 together. 1 and 2, the seal pattern portion includes first and second barrier layers 166 and 176, first to fourth surface treatment films 164, 168, 174 and 178, an organic insulating film 162, a photocurable layer 172 ). The seal pattern portion is formed of an organic insulating film 162, a first surface treatment film 164, a first barrier layer 166, a second surface treatment film 168, a photocured layer 172, a third surface The second barrier layer 176, and the fourth surface treatment film 178 in this order.

The first barrier layer 166 is formed of an inorganic insulating film, the second barrier layer 176 is formed of an inorganic metal insulating film, and the first to fourth surface treatment films 164, 168, 174, and 178 are formed by plasma processing with a plasma forming gas . In this case, the inorganic insulating film as may be formed by SiNx, SiONx, SiOx or the like, the inorganic metal insulating layer is SiO _2, AlN, Al ₂ O _3, Cr ₂ O _3, Mo, CuO, Bi ₂ O _3, GaN, In ₂ O ₃ , and the like. The plasma forming gas may be used as He, Ne, Ar, O ₂ , N _2, or the like.

The seal pattern part serves not only as a cohesive agent for attaching the upper and lower substrates 101 and 140 but also as a desiccant for eliminating the phenomenon of deterioration of device characteristics due to oxygen (O ₂ ) and moisture (H ₂ O) That is, it serves as a getter.

Specifically, the first barrier layer 166 may contain oxygen (O ₂ ), moisture (H ₂ O), or the like penetrating from the outside between the photocured layer 172 and the organic insulating film 162, . The second barrier layer 176 blocks oxygen (O ₂ ), water (H ₂ O), etc. penetrating from the outside of the photocured layer 172 and the upper substrate 140, . Each of the first to fourth surface treatment films 164, 168, 174 and 178 includes an organic insulating film 162 and a first barrier layer 166, a first barrier layer 166 and a photocurable layer 172, a photocured layer 172, Layer 176, the second barrier layer 176, and the upper substrate 140 to increase the adhesive force between the respective layers.

FIGS. 3A to 3I are cross-sectional views illustrating a method of manufacturing a light emitting display panel according to an embodiment of the present invention, and FIGS. 4A to 4E are cross-sectional views illustrating a microlens array according to an exemplary embodiment of the present invention.

Referring to FIG. 3A, a gate metal pattern including a gate electrode 102 and a gate line is formed on a lower substrate 101.

Specifically, a gate metal layer is deposited on the lower substrate 101 through a deposition method such as sputtering. The gate metal layer is used as aluminum (Al), aluminum alloy, aluminum-neodymium (AlAd), copper (Cu), titanium (Ti), chromium (Cr) The gate metal layer is patterned through a photolithographic process and an etching process to form a gate metal pattern including the gate line and the gate electrode 102.

3B, a gate insulating layer 106 is formed on a lower substrate 101 on which a gate electrode pattern is formed, and a semiconductor pattern 112 including an active layer 114 and an ohmic contact layer 116 is formed.

Specifically, an inorganic insulating material is deposited on the lower substrate 101 on which a gate metal pattern is formed by a deposition method such as PECVD (Plasma Enhanced Chemical Vapor Deposition), thereby forming a gate insulating film 106. An amorphous silicon layer and an amorphous silicon layer doped with an impurity are sequentially formed as a gate insulating film deposition method. Then, the amorphous silicon layer and the amorphous silicon layer doped with the impurity are panned by the photolithography process and the etching process, thereby forming the semiconductor pattern 112 including the active layer 114 and the ohmic contact layer 116. As the gate insulating film 106, an inorganic insulating material such as silicon nitride (SiOx), silicon oxide (SiNx), or the like is used.

Referring to FIG. 3C, a source / drain electrode pattern including a source electrode 104, a drain electrode 110, and a data line (not shown) is formed on the gate insulating layer 106 on which the semiconductor pattern 112 is formed.

Specifically, a source / drain metal layer is formed by a deposition method such as sputtering on the gate insulating film 106 on which the semiconductor pattern 112 is formed. As the source / drain metal layer, molybdenum (Mo), molybdenum tungsten (MoW), copper (Cu), or the like is used. The source / drain metal layer is patterned by a photolithography process and an etching process, thereby forming a source / drain electrode pattern including the source electrode 104 and the drain electrode 110. Then, the ohmic contact layer 116 exposed between the two electrodes is removed using the source electrode 104 and the drain electrode 110 as a mask to expose the active layer 114.

Referring to FIG. 3D, inorganic and organic protective films 108 and 120 including a contact hole 122 are formed on a gate insulating film 106 on which a source / drain electrode pattern is formed.

Specifically, the inorganic and organic protective films 108 and 120 are formed on the gate insulating film 106 on which the source / drain electrode patterns are formed by a method such as PECVD, spin coating, or spinless coating. Then, the inorganic and organic protective films 108 and 120 are patterned by a photolithography process and an etching process, thereby forming a contact hole 122. An inorganic insulating material such as a gate insulating film 106 is used for the inorganic protective film 108, and an organic insulating material such as acrylic is used for the organic protective film 120.

Referring to FIG. 3E, a pixel electrode 124 is formed on the inorganic and organic passivation layers 108 and 120.

Specifically, a transparent conductive material such as ITO or IZO is formed on the inorganic and organic protective films 108 and 120 by a deposition method such as sputtering. The pixel electrode 124 is connected to the drain electrode 110 of the thin film transistor through the contact hole 122.

Referring to FIG. 3F, a bank insulating layer 126 including an organic hole 128 is formed on a lower substrate 101 on which a pixel electrode 124 is formed.

Specifically, the photosensitive organic insulating material is entirely coated on the lower substrate 101 on which the pixel electrode 124 is formed through a coating method such as spin-spin coating or spin coating. In this organic insulating material, a bank insulating film 126 including an organic hole 128 for exposing the pixel electrode 124 is formed by a photolithography process and an etching process.

3G, a first electrode 130, an organic layer 132, and a second electrode 134 are sequentially formed on a lower substrate 101 on which a bank insulating layer 126 including an organic hole 128 is formed do.

An opaque material such as aluminum having a high reflectance is deposited on the organic hole 128 by a sputtering method and a hole injecting layer (HIL), a hole injecting layer (HIL), a light emitting layer, an electron transporting layer (ETL) And an organic layer 126 including an electron transport layer (EIL) are sequentially formed. The second electrode 134 is formed of a transparent conductive material such as ITO or IZO on the lower substrate 101 on which the organic layer 126 is formed.

Referring to FIG. 3H, an organic insulating layer is formed on a lower substrate 101 on which a thin film transistor, a pixel electrode 124, a first electrode 130, an organic layer 132, and a second electrode 134 are formed, The first and second barrier layers 166 and 176, the photo-curing agent layer 176 and the first to fourth surface treatment films 164, 168, 174 and 178 are formed. At this time, from the lower substrate 101, the seal pattern part is provided with an organic insulating film 162, a first surface treatment film 164, a first barrier layer 166, a second surface treatment film 168, a photocured layer 172, The third surface treatment film 174, the second barrier layer 176, and the fourth surface treatment film 178 in this order.

4A, the organic insulating layer 162 is formed on the lower substrate 101 on which the thin film transistor and the OEL cell are formed by PECVD, spin coating, spinless coating ) Or the like. The organic insulating layer 162 may be formed of polyimide (PI), polyacrylate (PA), or the like.

4B, the first surface treatment film 164 is formed on the lower substrate 101 by depositing an organic insulating film 162 formed around the active region on the lower substrate 101 with He, Ne, Ar, O ₂ , N _2, or the like And is formed by plasma treatment with a plasma forming gas. At this time, the first surface treatment film 164 is formed to have a thickness of 10 to 1000 ANGSTROM.

Next, as shown in FIG. 4C, the first barrier layer 166 is formed on the first surface treatment film 164 by a method such as PECVD, spin coating, spin coating, . At this time, the inorganic insulating layer is formed of SiNx, SiONx, SiOx, etc., and the first barrier layer 166 is formed to have a thickness of 100 to 5000 ANGSTROM.

4D, the second surface treatment film 168 is formed by plasma-treating the first barrier layer 166 in the same manner as the first surface treatment film (), and thereafter, as shown in FIG. 4E A light curing agent layer 172 is formed. The photocuring agent layer 172 is subjected to plasma treatment in the same manner as the first surface treatment film 164 to form a third surface treatment film (not shown) on the lower substrate 101 on which the photocuring agent layer 172 is formed, 174 are formed.

4E, the second barrier layer 176 is formed on the third surface treatment film 174 by a method such as PECVD, spin coating, spinless coating, An insulating film is formed. The second barrier layer 176 is formed of SiO ₂ , AlN, Al ₂ O ₃ , Cr ₂ O ₃ , Mo, CuO, Bi ₂ O ₃ , GaN, In ₂ O ₃ , And is formed to have a thickness of 100 to 5000 ANGSTROM.

4A to 4E, a thin film transistor formed on the lower substrate 101 and a mask (not shown) are formed on the lower substrate 101 so as not to affect the OEL cell, 180) to form an actual pattern portion.

3A to 4E, a light emitting display panel is formed as shown in FIG. 3I by attaching a lower substrate 101 and an upper substrate 140 having a thin film transistor, an OEL cell, and a seal pattern formed thereon .

5 is a cross-sectional view of a light emitting display panel according to a second embodiment of the present invention.

The light emitting display panel according to the second embodiment of the present invention is the same as that of the light emitting display panel according to the first embodiment except for the actual pattern part and the upper substrate, and a description thereof will be omitted.

5, the seal pattern unit according to the second embodiment of the present invention is formed along the periphery of the active region of the lower substrate 101 and includes at least one barrier (not shown) for attaching the lower substrate 101 and the upper substrate 200, Layer and a surface treatment film. For example, as shown in FIG. 5, the seal pattern portion may be formed of the organic insulating film 150, the photo-curing agent layer 154, the barrier layer 158, and the first to third surface treatment films 152, 156 and 160. The seal pattern portion includes an organic insulating film 150, a first surface treatment film 152, a photo-curing agent layer 154, a second surface treatment film 156, a barrier layer 158, Film 160 sequentially.

The organic insulating layer 150 is formed of polyimide (PI), polyacrylate (PA) or the like, and is formed to have a thickness of 100 to 10,000 ANGSTROM. The barrier layer 158 may be formed of an inorganic metal insulating film such as SiO ₂ , AlN, Al ₂ O ₃ , Cr ₂ O ₃ , Mo, CuO, Bi ₂ O ₃ , GaN, In ₂ O ₃ , 158 are formed to have a thickness of 100 to 5000 angstroms. At this time, the barrier layer 158 is formed to be thicker than the width of the organic insulating film 150 and the photocuring agent layer 154. The first to third surface treatment films 152, 156 and 160 are formed by plasma treatment with a plasma forming gas such as He, Ne, Ar, O ₂ , N _2, or the like.

The seal pattern part serves not only as a cohesive agent for attaching the upper and lower substrates 101 and 140 but also as a desiccant for eliminating the phenomenon of deterioration of device characteristics due to oxygen (O ₂ ) and moisture (H ₂ O) That is, it serves as a getter.

Specifically, the organic insulating layer 150 may be formed of oxygen (O ₂ ), water (H ₂ O), or the like penetrating from the outside between the photocured wp layer 154 and the organic insulating layer 150, . The barrier layer 158 blocks oxygen (O ₂ ), moisture (H ₂ O), etc. penetrating from the outside of the photocuring agent layer 154 and the upper substrate 200,

Each of the first to third surface treatment films 152, 156 and 160 includes an organic insulating film 150, a photocuring agent layer 154, a photocuring agent layer 154 and a barrier layer 158, a barrier layer 158 and an upper substrate 200, So that the adhesive strength between the respective layers can be increased.

On the other hand, the upper substrate 200 has a groove 204 formed at a position corresponding to the seal pattern portion to form a round moisture absorbent 202 having a smaller width than the seal pattern portion. At this time, the groove 204 is formed to have a height of 10 to 500 mm and a width of 10 to 500 mm. The round moisture absorber 202 uses a liquid phase and a solid phase mixed material of main components such as BaO and CaO in the groove 204.

The manufacturing method of the light emitting display panel according to the second embodiment of the present invention corresponds to the manufacturing method of the light emitting display panel of the first embodiment and will not be described here. In other words, the method of forming the organic insulating film and the photo-curing agent included in the seal pattern part according to the second embodiment of the present invention is the same as the method of forming the organic insulating film and the photo-curing agent according to the first embodiment, The barrier layer of the seal pattern portion according to the embodiment is formed in the same manner as the second barrier layer according to the first embodiment.

6 is a cross-sectional view of a light emitting display panel according to a third embodiment of the present invention.

The light emitting display panel according to the third embodiment of the present invention is the same as that of the light emitting display panel according to the first embodiment except for the actual pattern part and the upper substrate, and a description thereof will be omitted.

6, the seal pattern unit according to the third embodiment of the present invention is formed along the periphery of the active region of the lower substrate 101 and includes an insulation barrier film 220 A moisture absorbent film 194, a protective film 192, and a photo-curing agent layer 190 are formed.

Specifically, the insulating barrier layer 220 is formed of an inorganic or organic insulating layer to cover the thin film transistor formed on the lower substrate 101, the OEL cell. The moisture absorbent 194 and the protective film 192 are formed in the form of a film along the periphery of the active region of the lower substrate 101 having the thin film transistor and the OEL cell covered with the insulating film 220.

The seal pattern portion serves not only as a cohesive agent for attaching the upper and lower substrates 101 and 210 but also as a desiccant for eliminating the phenomenon of deterioration of the device characteristics due to oxygen (O ₂ ) and moisture (H ₂ O) That is, it serves as a getter.

Specifically, the insulation barrier film 220 is formed to cover the thin film transistor formed on the lower substrate 101, the OEL cell, and the oxygen (O ₂ ), moisture (H ₂ O) . The moisture absorbent film 194 is formed in the form of a transparent film for absorbing and removing oxygen (O ₂ ), water (H ₂ O), and outgasing gases generated from the outside and inside of the device, (O ₂ ), water (H ₂ O) interception, and a transparent film to block moisture absorber film and external period.

The photosensitizer layer 190 prevents the peeling of the moisture absorbent film 194 and the protective film 192 due to oxygen (O ₂ ), water (H ₂ O) A photo-curing agent composed mainly of a polymer and an inorganic spacer is formed.

On the other hand, the moisture absorbent film 194 and the protective film 192 of the upper substrate 210 are in close contact with each other to cause overlapping or collision between the films, and thus the grooves 212 are formed. The groove 212 of the upper substrate 210 may be formed in a polygonal shape such as a triangle, a hemisphere, or a square.

7A to 7C are cross-sectional views illustrating a method of manufacturing a light emitting display panel according to a third embodiment of the present invention.

In the method of manufacturing the light emitting display panel according to the third embodiment of the present invention, the method of forming the thin film transistor and the OEL cell on the lower substrate is the same, and a description thereof will be omitted.

Referring to FIG. 7A, an insulating barrier layer 220 is formed on the lower substrate 101 as an organic or inorganic insulating layer to cover the thin film transistor and the OEL cell.

Specifically, the insulating barrier layer 220 is formed of an inorganic insulating layer or an organic insulating layer by a method such as PECVD, spin coating, or spinless coating to cover the thin film transistor and the OEL cell. At this time, the organic insulating film is polyimide, is formed in a polyacrylamide or the like, the inorganic insulating layer is _{SiO 2, AlN, Al 2 O} 3, Cr 2 O 3, Mo, CuO, Bi 2 O 3, GaN, In 2 O 3 , etc. . When the organic insulating film is formed of an insulating barrier film, it is formed to have a thickness of 100 to 10,000 ANGSTROM. When the inorganic insulating film is formed of an insulating barrier film, it is formed to have a thickness of 100 to 5000 ANGSTROM.

Referring to FIG. 7B, grooves 212 are formed on the upper substrate 210 in the form of a polygon such as a triangle, a hemisphere, or a square.

More specifically, the grooves 212 of the upper substrate 210 are formed on the boundary surface where the interfaces meet each other in order to prevent overlapping and collision of the interfaces with each other when the moisture absorbent film 194, the protective film 192, A groove 212 is formed on the surface of the substrate. The groove 212 is formed in a polygonal shape such as a triangle, a hemisphere, or a square. The height of the groove 212 is 10 to 500 mm. The width of the groove 212 is 10 to 500 mmdm.

7C, a moisture absorbent film 194, a protective film 192, a light-curing agent layer 194, and a light-curing agent layer 193 are formed between the lower substrate 101 formed as shown in FIG. 7A and the upper substrate 210 formed as shown in FIG. (190) is formed along the periphery of the active region, and the two substrates (101, 210) are bonded together to form a light emitting display panel.

Specifically, the moisture absorbent film 194 is formed on the upper or lower substrates 101 and 210 along the periphery of the active region, using a thin film-like mixed material mainly composed of BaO, CaO, etc., and the protective film 192 is made of Acrylate , And a film using a thin film-like mixed material containing an epoxy-based polymer as a main component. Further, the moisture absorbent and the protective films 192 and 194 have a transmittance of 50 to 100%. At this time, the moisture absorbent and the protective films 192 and 194 are formed to a thickness of 1000 Å to 0.5 mm.

The photo-curing agent layer 190 is formed using a UV curable polymer liquid material containing an acrylate, an epoxy-based polymer, and an inorganic spacer for forming a thickness. The wavelength of the UV light is formed to be 175 to 450 nm.

Thus, the light emitting display panel is formed by bonding the upper and lower substrates 101 and 210 with the seal pattern portion including the moisture absorbent film 194, the protective film 192, and the photo-curing agent layer 190.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.

1 is a perspective view illustrating a light emitting display panel according to a first embodiment of the present invention.

2 is a cross-sectional view of the light emitting display panel shown in FIG.

3A to 3I are cross-sectional views illustrating a method of manufacturing a light emitting display panel according to an embodiment of the present invention.

4A to 4E are cross-sectional views illustrating a microlens array according to an embodiment of the present invention.

5 is a cross-sectional view of a light emitting display panel according to a second embodiment of the present invention.

6 is a cross-sectional view of a light emitting display panel according to a third embodiment of the present invention.

7A to 7C are cross-sectional views illustrating a method of manufacturing a light emitting display panel according to a third embodiment of the present invention.

Description of the Related Art

101: lower substrate 102: gate electrode

104: source electrode 106: gate electrode

108: inorganic protective film 110: drain electrode

112: semiconductor layer

120: organic passivation layer 122: contact hole

124: pixel electrode 126: bank insulating film

130: first electrode 132: organic layer

134: second electrode 140: upper substrate

152, 164: first surface treatment film 150, 162: organic insulating film

154, 172: light curing agent layer 156, 168: second surface treatment film

158, 166, 176: barrier layer

Claims (10)

Forming a light emitting cell in an active region of the lower substrate; Forming a seal pattern portion having an organic insulating layer, a photo-curing agent layer, at least one barrier layer, and at least one surface treatment film along an edge of the lower substrate so as to surround the active region; And bonding the upper substrate so as to correspond to the lower substrate. The method according to claim 1, The barrier layer is a metal, such as formed of an inorganic insulating film such as SiNx, SiONx, SiOx, or the _{SiO 2, AlN, Al 2 O} 3, Cr 2 O 3, Mo, CuO, Bi 2 O 3, GaN, In 2 O 3 And forming an inorganic insulating film. The method according to claim 1, Wherein the barrier layer is formed to a thickness of 100 to 5000 ANGSTROM, and the surface treatment film is formed to a thickness of 10 to 1000 ANGSTROM. The method according to claim 1, The step of forming the seal pattern part Forming the organic insulating film along an edge of the lower substrate to surround the active region; Forming a first surface treatment film by plasma-treating the organic insulating film with a plasma forming gas; Forming a first barrier layer on the first surface treatment film; Forming a second surface treatment film by plasma-treating the first barrier layer with a plasma forming gas; Forming the photocuring agent layer on the second surface treatment film; Subjecting the photocuring agent layer to the plasma treatment with the plasma forming gas to form a third surface treatment film; Forming a second barrier layer on the third surface treatment film; And forming a third surface treatment film by plasma-treating the second barrier layer with the plasma forming gas. The method according to claim 1, Wherein the barrier layer is formed to be wider than the organic insulating layer and the light curing agent layer. 6. The method of claim 5, Wherein the upper substrate is formed with a groove for receiving a moisture absorbent at a position corresponding to a position where the seal pattern portion is formed and the groove is formed with a height of 10 to 500 mm and a width of 10 to 500 mm. A method of manufacturing a panel. Forming a light emitting cell in an active region of the lower substrate; A moisture absorbent film surrounding the active region and covering the light emitting cell; a protective film surrounding the side of the moisture absorbent film and contacting the side surface of the moisture absorbent film; and a light curing agent layer contacting the side surface of the protective film, Forming a seal pattern portion; And bonding an upper substrate having a groove formed on a lower surface thereof to the lower substrate corresponding to a position where the seal pattern portion is formed, And the front surface of the lower surface of the upper substrate is in contact with the upper surface of the seal pattern portion. 8. The method of claim 7, The moisture absorptive film is a film using a mixed material in the form of a thin film containing BaO and CaO capable of absorbing and removing oxygen, moisture and outgasing gas from the outside, and the moisture absorptive film has a thickness of 1000 Å to 0.5 mm Wherein the light emitting display panel comprises a light emitting diode. 8. The method of claim 7, Wherein the protective film is a film using a mixed material of a thin film type including an acrylate and an epoxy based polymer, and the protective film has a thickness of 1000 A to 0.5 mm. 8. The method of claim 7, The upper substrate has a groove formed at a position corresponding to a position where the seal pattern portion is formed to prevent an interface collision and an overlap between the moisture absorbent film, the protective film and the photo-curing agent layer, and the groove is formed to have a height of 10 to 500 mm , And a width of 10 to 500 mm.

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