KR20100001103A - Fabricating method of luminescence dispaly panel - Google Patents

Abstract

PURPOSE: A method for manufacturing a light emitting display panel is provided to block external moisture and oxygen by forming a seal pattern part around an active region of a lower substrate. CONSTITUTION: A light emitting cell is formed on a lower substrate(101). The seal pattern unit is formed around the active region of the lower substrate. The seal pattern unit includes an organic insulation film(162), a photo-cured layer(172), at least one barrier layer(166,176), and at least one surface process film(164,168,174,178). The thickness of the barrier layer is 100 to 5000 angstrom. The thickness of the surface process film is 10 to 1000 angstrom. An upper plate(140) and a lower plate are bonded.

Description

Manufacturing method of light emitting display panel {FABRICATING METHOD OF LUMINESCENCE DISPALY PANEL}

The present invention is to provide a method of manufacturing a light emitting display panel which can prevent the permeation of moisture or oxygen by minimizing changes in the manufacturing process, and can prevent impact and peeling.

Video display devices that realize various information as screens are the core technologies of the information and communication era, and are developing in a direction of thinner, lighter, portable and high performance. As a flat panel display device that can reduce the weight and volume, which is a disadvantage of the cathode ray tube (CRT), an organic light emitting display device (OLED), which displays an image by controlling the amount of light emitted from the organic light emitting layer, has been in the spotlight. OLED is a self-luminous device using a thin light emitting layer between the electrodes has the advantage that it can be thinned like a paper.

In an active matrix OLED, pixels consisting of three color (R, G, B) sub-pixels are arranged in a matrix to display an image. Each sub pixel includes an organic electroluminescent (OEL) cell and a cell driver for independently driving the OEL cell. The cell driver includes at least two thin film transistors and a storage capacitor connected between a gate line for supplying a scan signal, a data line for supplying a video data signal, and a common power supply line for supplying a common power signal, and includes a pixel of an OEL cell. Drive the electrode. The OEL cell is composed of a pixel electrode connected to the cell driver, an organic layer on the pixel electrode, and a cathode on the organic layer. In this case, the light emitting display panel is formed by bonding the thin film transistor, the lower substrate on which the OEL cell is formed, and the metal cap. A getter is formed on the metal cap to prevent penetration of moisture (H ₂ O) and oxygen (O ₂ ) from the outside. However, the light emitting display panel using the metal cap is thickened by the metal cap, and the upper limit of the aperture ratio is generated due to the back emission due to the metal. Accordingly, there is a need for a method of manufacturing a light emitting display panel which can reduce the thickness of the light emitting display panel and emit light over the entire surface, and can prevent moisture and oxygen penetration while minimizing process changes.

In order to solve the above problems, the present invention provides a method of manufacturing a light emitting display panel which can prevent the permeation of moisture or oxygen by minimizing changes in the manufacturing process and can prevent impact and peeling.

In order to achieve the above technical problem, a method of manufacturing a light emitting display panel according to the present invention comprises the steps of forming a light emitting cell on a lower substrate, and is formed around the active region of the lower substrate on which the light emitting cell is formed, Forming a failure turn portion having a photocuring agent layer, at least one barrier layer, at least one surface treatment film, and bonding the upper substrate to correspond to the lower substrate.

In order to achieve the above technical problem, a method of manufacturing a light emitting display panel according to the present invention comprises the steps of forming a light emitting cell on a lower substrate, the absorbent film, a protective film, around the active area of the lower substrate on which the light emitting cell is formed; Forming a failure turn portion including a photocuring agent layer, and forming a groove in the upper substrate at a position where the failure turn portion is formed.

In the method of manufacturing a light emitting display panel according to the present invention, a failure turn part including an organic insulating layer, a photocuring agent layer, at least one barrier layer, and at least one surface treatment layer is formed around the active region of the lower substrate on which the thin film transistor and the OEL cell are formed. Therefore, in the bonding process, it is possible to block moisture and oxygen from the outside and the front emission is possible, thereby increasing the aperture ratio. In addition, at least one barrier layer is formed of an inorganic insulating film or a metal inorganic insulating film.

Therefore, the organic insulating layer and the barrier layer included in the seal pattern part may be formed only by using materials that are used to form the thin film transistor substrate, thereby minimizing the process change and thus not increasing the process time.

In addition, by forming a groove in a position corresponding to the seal pattern portion in the upper substrate of the present invention, by forming a moisture absorbent in the groove can further maximize the blocking of moisture and oxygen from the outside.

In addition, the light emitting display panel and the method of manufacturing the same according to the present invention form a failure turn portion with a moisture absorbent film, a protective film, and a photocuring agent layer. At this time, the moisture absorbent film and the protective film is formed of a film that can block the moisture and oxygen, the transmittance is 50 to 100% is possible for full emission. When the lower substrate and the upper substrate are bonded together, there is no internal space such as voids inside the device to prevent distortion during large-area manufacturing.

In addition, the photocuring agent layer, which is a polymer material, may be formed to prevent impact and peeling during the scribing and breaking process during the manufacturing process of the light emitting display panel.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to FIGS. 1 to 7C.

1 is a perspective view illustrating a light emitting display panel according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view of the light emitting display panel illustrated in FIG. 1.

1 and 2, the light emitting display panel includes an upper substrate 140 and a lower substrate 101 facing each other and bonded to each other.

The upper substrate 140 faces the lower substrate 101 and is formed of a transparent material. The upper substrate 140 preferably uses an insulator such as glass or polymer.

The lower substrate 101 includes a cell driver 100 connected to the gate line GL, the data line DL, and the power line PL, and an OEL cell connected to the cell driver 100 and the power line PL. Include.

The cell driver 100 includes a switch thin film transistor T1 connected to a gate line GL and a data line DL, a drive connected between the switch thin film transistor T1 and a power supply line PL, and an anode of an OEL cell. The thin film transistor T2 and a storage capacitor C connected between the power supply line PL and the drain electrode of the switch thin film transistor T1 are provided.

The gate electrode of the switch thin film transistor T1 is connected to the gate line GL, the source electrode is connected to the data line DL, and the drain electrode is connected to the gate electrode and the storage capacitor C of the driving thin film transistor T2. . The source electrode of the driving thin film transistor T2 is connected to the power supply line PL and the drain electrode is connected to the first electrode of the OEL cell. The storage capacitor C is connected between the power line PL and the gate electrode of the driving thin film transistor T2.

The switch thin film transistor T1 is turned on when a scan pulse is supplied to the gate line GL, and supplies the data signal supplied to the data line DL to the gate electrode of the storage capacitor C and the driving thin film transistor T2. do. The driving thin film transistor T2 controls the amount of light emitted from the OEL cell by controlling the current I supplied from the power line PL to the OEL cell in response to the data signal supplied to the gate electrode. Also, even when the switch thin film transistor T1 is turned off, the driving thin film transistor T2 supplies a constant current I until the data signal of the next frame is supplied by the voltage charged in the storage capacitor C. Keep the cell luminescent.

As shown in FIG. 2, the driving thin film transistor T2 is provided with a gate electrode 102 formed on the lower substrate 101, a gate insulating film 106 covering the gate electrode 102, and a gate insulating film 106 interposed therebetween. The channel portion is overlapped with the gate electrode 102 to form a channel between the source electrode 110 and the drain electrode 108 and the channel portion for ohmic contact with the source electrode 110 and the drain electrode 108. The ohmic contact layer 116 formed on the active layer 114 is excluded. In addition, an inorganic passivation layer 118 formed of an inorganic insulating material and an organic passivation layer 120 formed of an organic insulating material may be formed on the driving thin film transistor formed on the lower substrate 101.

The OEL cell is formed on the inorganic passivation layer 118 and the organic passivation layer 120 covering the driving thin film transistor through the pixel electrode 124, the bank insulating layer 126 exposing the pixel electrode 124, and the organic hole 128. And a first electrode 130 formed on the exposed pixel electrode 124, an organic layer 132 including an emission layer formed on the first electrode 130, and a second electrode 134 formed on the organic layer 132. .

In this case, the pixel electrode 124 may be formed of a transparent material such as indium tin oxide (ITO) or indium zinc oxide (IZO). The first electrode 130 is formed of a metal material and a transparent conductive material as an anode. For example, the first electrode 130 may be formed of a metal material having a high reflectance such as aluminum (Al). The second electrode 134 may be formed of an aluminum-silver (AlAg) alloy or a transparent conductive material as a cathode.

Therefore, the organic layer 132 may be formed of a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer, an electron transport layer (ETL), and electron injection on the first electrode 130. It is formed by sequentially stacking the layers (Electron Injection layer; EIL). In the light emitting layer included in the organic layer 132, the excitons generated by recombination of electrons and holes through the first electrode 130 through the second electrode 134 return to the ground state to emit light having a specific wavelength. 180 will be emitted in full direction.

The seal pattern portion is formed around the active region of the lower substrate 101 and is formed of at least one barrier layer and a surface treatment film to bond the lower substrate 101 and the upper substrate 140 together. For example, as shown in FIGS. 1 and 2, the seal pattern portion includes the first and second barrier layers 166 and 176, the first to fourth surface treatment layers 164, 168, 174 and 178, the organic insulating layer 162, and the photocured layer 172. It can be formed into). The seal pattern portion is formed of the organic insulating film 162, the first surface treatment film 164, the first barrier layer 166, the second surface treatment film 168, the photocurable layer 172, and the third surface from the lower substrate 101. The treatment film 174, the second barrier layer 176, and the fourth surface treatment film 178 are sequentially stacked.

The first barrier layer 166 is formed of an inorganic insulating film, the second barrier layer 176 is formed of an inorganic metal insulating film, and the first to fourth surface treatment films 164, 168, 174, and 178 are formed by plasma treatment with a plasma forming gas. . In this case, the inorganic insulating film may be formed of SiNx, SiONx, SiOx, etc., and the inorganic metal insulating film may be SiO ₂ , AlN, Al ₂ O ₃ , Cr ₂ O ₃ , Mo, CuO, Bi ₂ O ₃ , GaN, In ₂ O ₃ or the like. The plasma forming gas may be He, Ne, Ar, O ₂ , N _2, or the like.

The fail-turn part not only serves as a binder for bonding the upper and lower substrates 101 and 140, but also a desiccant for eliminating a phenomenon in which device characteristics are deteriorated by oxygen (O ₂ ) and moisture (H ₂ O) penetrating from the outside. It acts as a getter.

In detail, the first barrier layer 166 may absorb oxygen (O ₂ ), moisture (H ₂ O), and the like that penetrate from outside between the photocurable layer 172 and the organic insulating layer 162 that are performed during and after UV light curing. Block it. The second barrier layer 176 blocks oxygen (O ₂ ), moisture (H ₂ O), and the like, which penetrate from the outside of the photocurable layer 172 and the upper substrate 140 that are performed during and after UV light curing. . Each of the first to fourth surface treatment layers 164, 168, 174, and 178 may include an organic insulating layer 162, a first barrier layer 166, a first barrier layer 166, a photocurable layer 172, a photocurable layer 172, and a second barrier. The adhesive layer may be formed between the layer 176, the second barrier layer 176, and the upper substrate 140 to increase adhesion between the layers.

3A to 3I are cross-sectional views illustrating a method of manufacturing a light emitting display panel according to an exemplary embodiment of the present invention, and FIGS. 4A to 4E are cross-sectional views illustrating a micro lens array according to an exemplary embodiment of the present invention.

Referring to FIG. 3A, a gate metal pattern including a gate electrode 102 and a gate line is formed on the lower substrate 101.

Specifically, the gate metal layer is deposited on the lower substrate 101 through a deposition method such as sputtering. The gate metal layer is used as aluminum (Al), aluminum alloy, aluminum-neodymium (AlAd), copper (Cu), titanium (Ti), chromium (Cr), or the like. The gate metal layer is patterned through a photolithography process and an etching process to form a gate metal pattern including the gate line and the gate electrode 102.

Referring to FIG. 3B, a gate insulating layer 106 is formed on a lower substrate 101 on which a gate electrode pattern is formed, and a semiconductor pattern 112 including an active layer 114 and an ohmic contact layer 116 is formed.

Specifically, the gate insulating layer 106 is formed by depositing an inorganic insulating material on the lower substrate 101 on which the gate metal pattern is formed by deposition of a plasma enhanced chemical vapor deposition (PECVD). An amorphous silicon layer and an amorphous silicon layer doped with impurities are sequentially formed by the gate insulating film deposition method. Subsequently, the semiconductor pattern 112 including the active layer 114 and the ohmic contact layer 116 is formed by panning the amorphous silicon layer and the doped amorphous silicon layer through a photolithography process and an etching process. As the gate insulating layer 106, an inorganic insulating material such as silicon nitride (SiOx), silicon oxide (SiNx), or the like is used.

Referring to FIG. 3C, a source / drain electrode pattern including a source electrode 110, a drain electrode 108, and a data line 104 is formed on the gate insulating layer 106 on which the semiconductor pattern 112 is formed.

Specifically, the source / drain metal layer is formed on the gate insulating layer 106 on which the semiconductor pattern 112 is formed by a deposition method such as sputtering. As the source / drain metal layer, molybdenum (Mo), molybdenum tungsten (MoW), copper (Cu), or the like is used. The source / drain metal layer is patterned by a photolithography process and an etching process to form a source / drain electrode pattern including the source electrode 110 and the drain electrode 108. Subsequently, the ohmic contact layer 116 exposed between the two electrodes is removed using the source electrode 110 and the drain electrode 108 as a mask so that the active layer 114 is exposed.

Referring to FIG. 3D, inorganic and organic passivation layers 118 and 120 including contact holes 122 are formed on the gate insulating layer 106 on which the source / drain electrode patterns are formed.

Specifically, the inorganic and organic passivation layers 118 and 120 are formed on the gate insulating layer 106 on which the source / drain electrode patterns are formed by PECVD, spin coating, or spinless coating. In addition, the contact holes 122 are formed by patterning the inorganic and organic passivation layers 118 and 120 using a photolithography process and an etching process. Here, an inorganic insulating material such as the gate insulating layer 106 is used as the inorganic protective film 118, and an organic insulating material such as acryl is used as the organic protective film 120.

Referring to FIG. 3E, pixel electrodes 124 are formed on the inorganic and organic passivation layers 118 and 120.

In detail, the pixel electrode 124 is formed on the inorganic and organic passivation layers 118 and 120 by a deposition method such as sputtering or the like. The pixel electrode 124 is connected to the drain electrode 110 of the thin film transistor through the contact hole 122.

Referring to FIG. 3F, a bank insulating layer 126 including an organic hole 128 is formed on the lower substrate 101 on which the pixel electrode 124 is formed.

Specifically, the photosensitive organic insulating material is entirely coated on the lower substrate 101 on which the pixel electrode 124 is formed through a coating method such as spinless or spin coating. The organic insulating material includes a bank insulating layer 126 including an organic hole 128 exposing the pixel electrode 124 through a photolithography process and an etching process.

Referring to FIG. 3G, the first electrode 130, the organic layer 132, and the second electrode 134 are sequentially formed on the lower substrate 101 on which the bank insulating layer 126 including the organic holes 128 is formed. do.

Specifically, an opaque material such as aluminum having high reflectance is deposited on the organic hole 128, and the hole injection layer HIL, the hole injection layer HIL, the light emitting layer, the electron transport layer ETL, and the electron injection layer are deposited. The organic layer 126 including (EIL) is sequentially formed. Thereafter, the second electrode 134 is formed of a transparent conductive material such as ITO or IZO on the lower substrate 101 on which the organic layer 126 is formed.

Referring to FIG. 3H, an organic insulating layer is formed along the periphery of the active region on the lower substrate 101 on which the thin film transistor, the pixel electrode 124, the first electrode 130, the organic layer 132, and the second electrode 134 are formed. Failure turn parts including the first and second barrier layers 166 and 176, the photocuring agent layer 176, and the first to fourth surface treatment layers 164, 168, 174 and 178 are formed. At this time, the seal pattern portion is formed from the lower substrate 101 by the organic insulating film 162, the first surface treatment film 164, the first barrier layer 166, the second surface treatment film 168, the photocured layer 172, and the like. The surface treatment film 174, the second barrier layer 176, and the fourth surface treatment film 178 are sequentially stacked.

Specifically, as shown in FIG. 4A, the organic insulating layer 162 is formed of PECVD, spin coating, and spinless coating around the active region on the lower substrate 101 on which the thin film transistor and the OEL cell are formed. ) And the like. The organic insulating layer 162 may be formed of polyimide (PI), polyacrylic (PA), or the like.

Subsequently, as shown in FIG. 4B, the first surface treatment layer 164 may form an organic insulating layer 162 formed on the lower substrate 101 along the periphery of the active region, such as He, Ne, Ar, O ₂ , and N ₂ . It is formed by plasma treatment with a plasma forming gas. At this time, the first surface treatment film 164 is formed to have a thickness of 10 to 1000 kPa.

Next, as shown in FIG. 4C, the first barrier layer 166 may be formed on the first surface treatment layer 164 by using an inorganic insulating film such as PECVD, spin coating, or spinless coating. Is formed. At this time, the inorganic insulating layer is formed of SiNx, SiONx, SiOx and the like, and the first barrier layer 166 is formed to have a thickness of 100 ~ 5000Å.

Thereafter, as shown in FIG. 4D, the second surface treatment film 168 is formed by plasma treatment of the first barrier layer 166 in the same manner as the first surface treatment film (), and as shown in FIG. 4E. The photocuring agent layer 172 is formed. As shown in FIG. 4D, the photocuring agent layer 172 is plasma-treated on the lower substrate 101 on which the photocuring agent layer 172 is formed, to thereby form a third surface treatment film ( 174 is formed.

Next, as illustrated in FIG. 4E, the second barrier layer 176 may be formed on the third surface treatment layer 174 by a method such as PECVD, spin coating, or spinless coating. An insulating film is formed. In this case, the metal inorganic insulating layer is formed of SiO ₂ , AlN, Al ₂ O ₃ , Cr ₂ O ₃ , Mo, CuO, Bi ₂ O ₃ , GaN, In ₂ O ₃ , and the like. It is formed to have a thickness of 100 ~ 5000Å.

In addition, as shown in FIGS. 4A to 4E, when forming a failure turn part, the thin film transistor formed on the lower substrate 101 and the mask are spaced apart from the lower substrate 101 by a predetermined interval so as not to affect the OEL cell. 180) to form a failure turn part.

Accordingly, as shown in FIGS. 3A to 4E, the lower substrate 101 and the upper substrate 140 having the thin film transistor, the OEL cell, and the seal pattern portion are bonded to each other to form a light emitting display panel as illustrated in FIG. 3I. .

5 is a cross-sectional view of a light emitting display panel according to a second exemplary embodiment of the present invention.

Since the light emitting display panel according to the second embodiment of the present invention is the same except for the failure turn portion and the upper substrate of the light emitting display panel according to the first embodiment, description thereof will be omitted.

Referring to FIG. 5, the seal pattern part according to the second exemplary embodiment of the present invention is formed along the periphery of the active region of the lower substrate 101 and at least one barrier for bonding the lower substrate 101 and the upper substrate 200 to each other. It is formed of a layer and a surface treatment film. For example, as illustrated in FIG. 5, the seal pattern part may be formed of the organic insulating layer 150, the photocuring agent layer 154, the barrier layer 158, and the first to third surface treatment layers 152, 156, and 160. The seal pattern portion is formed of the organic insulating film 150, the first surface treatment film 152, the photocuring agent layer 154, the second surface treatment film 156, the barrier layer 158, and the third surface treatment from the lower substrate 101. The films 160 are sequentially stacked.

The organic insulating layer 150 is formed of polyimide (PI), polyacryl (PA), or the like, and is formed to a thickness of 100 to 10000 GPa. The barrier layer 158 is an inorganic metal insulating film and may be formed of SiO ₂ , AlN, Al ₂ O ₃ , Cr ₂ O ₃ , Mo, CuO, Bi ₂ O ₃ , GaN, In ₂ O _3, or the like. 158) is formed to a thickness of 100 ~ 5000Å. In this case, the barrier layer 158 is formed thicker than the width of the organic insulating layer 150 and the photocuring agent layer 154. The first to third surface treatment films 152, 156, and 160 are formed by plasma treatment with a plasma forming gas such as He, Ne, Ar, O ₂ , or N ₂ .

The fail-turn part not only serves as a binder for bonding the upper and lower substrates 101 and 140, but also a desiccant for eliminating a phenomenon in which device characteristics are deteriorated by oxygen (O ₂ ) and moisture (H ₂ O) penetrating from the outside. It acts as a getter.

In detail, the organic insulating layer 150 may absorb oxygen (O ₂ ), moisture (H ₂ O), etc. that penetrate from outside between the photocuring wp layer 154 and the organic insulating layer 150 which are performed during and after UV light curing. Block it. The barrier layer 158 blocks oxygen (O ₂ ), moisture (H ₂ O), and the like, which penetrate from outside of the photocuring agent layer 154 and the upper substrate 200 which are advanced during and during UV light curing.

Each of the first to third surface treatment layers 152, 156, and 160 may include an organic insulating layer 150, a photocuring agent layer 154, a photocuring agent layer 154, a barrier layer 158, a barrier layer 158, and an upper substrate 200. It can be formed between to increase the adhesion between each layer.

On the other hand, the upper substrate 200 forms a groove 204 to form a round absorbent 202 having a width smaller than the failure turn portion in a position corresponding to the failure turn portion. At this time, the groove 204 is formed to have a height of 10 ~ 500mm, is formed to have a width of 10 ~ 500mm. The round absorbent 202 uses a liquid and solid mixed material of main components such as BaO and CaO in the groove 204.

The manufacturing method of the light emitting display panel according to the second embodiment of the present invention is omitted since it corresponds to the manufacturing method of the light emitting display panel of the first embodiment. In other words, the method of forming the organic insulating film and the photocuring agent included in the seal pattern part according to the second embodiment of the present invention is the same as the method of forming the organic insulating film and the photocuring agent according to the first embodiment, and the second The barrier layer of the seal pattern portion according to the embodiment is formed in the same manner as the second barrier layer according to the first embodiment.

6 is a cross-sectional view of a light emitting display panel according to a third exemplary embodiment of the present invention.

Since the light emitting display panel according to the third exemplary embodiment of the present invention is the same except for the failure turn part and the upper substrate of the light emitting display panel according to the first exemplary embodiment, description thereof will be omitted.

Referring to FIG. 6, the seal pattern part according to the third exemplary embodiment of the present invention is formed around the active region of the lower substrate 101, and the insulation prevention layer 220 is bonded to the lower substrate 101 and the upper substrate 210. ), A moisture absorbent film 194, a protective film 192, and a photocuring agent layer 190.

In detail, the insulation prevention layer 220 is formed of an inorganic or organic insulating layer to cover the thin film transistor and the OEL cell formed on the lower substrate 101. The moisture absorbent 194 and the protective film 192 are formed in the form of a film along the periphery of the active region of the thin film transistor and the lower substrate 101 on which the OEL cell is covered.

The fail-turn part not only serves as a binder for bonding the upper and lower substrates 101 and 210, but also a desiccant for eliminating a phenomenon in which device characteristics are deteriorated by oxygen (O ₂ ) and moisture (H ₂ O) penetrating from the outside. It acts as a getter.

Specifically, the insulation protection film 220 is formed to cover the thin film transistor and the OEL cell formed on the lower substrate 101, and during the UV light curing process, oxygen (O ₂ ) and moisture (H ₂ O) penetrating from the outside afterwards. Block etc. The moisture absorbent film 1994 is formed in the form of a transparent film to absorb and remove oxygen (O ₂ ), moisture (H ₂ O), and outgassing gas generated from the outside and inside of the device, and the protective film 192 is formed outside the sosa. And it is formed in the form of a transparent film to block the oxygen (O ₂ ), moisture (H ₂ O) that penetrates inside, the moisture absorbent film and the external period.

In addition, the photocuring agent layer 190 prevents peeling of the absorbent film 194 and the protective film 192 due to the blocking of oxygen (O ₂ ), moisture (H ₂ O) generated in the outside and inside of the device, and external impact. It is formed of a photocuring agent mainly composed of a polymer and an inorganic spacer.

Meanwhile, the upper substrate 210 forms the groove 212 because the absorbent film 194 and the protective film 192 may be in close contact with each other to cause overlapping and collision between the films. The groove 212 of the upper substrate 210 may be formed in a polygonal shape such as triangle, hemisphere, and quadrangle.

7A to 7C are cross-sectional views illustrating a method of manufacturing a light emitting display panel according to a third embodiment of the present invention.

Since the method of forming the thin film transistor and the OEL cell on the lower substrate of the method of manufacturing the light emitting display panel according to the third embodiment of the present invention is the same, a description thereof will be omitted.

Referring to FIG. 7A, an insulation prevention layer 210 is formed of an organic or inorganic insulating layer on the lower substrate 101 to cover the thin film transistor and the OEL cell.

Specifically, the insulation protection layer 210 is formed of an inorganic insulating film or an organic insulating film by a method such as PECVD, spin coating, or spinless coating so as to cover the thin film transistor and the OEL cell. At this time, the organic insulating film is formed of polyimide, polyacryl, etc., and the inorganic insulating film is SiO ₂ , AlN, Al ₂ O ₃ , Cr ₂ O ₃ , Mo, CuO, Bi ₂ O ₃ , GaN, In ₂ O _3, etc. Can be formed. When the organic insulating film is formed as an insulation barrier, it is formed to a thickness of 100 to 10000 kPa, and when the inorganic insulation film is formed as an insulation barrier, it is formed to a thickness of 100 to 5000 GPa.

Referring to FIG. 7B, a groove 212 is formed in the upper substrate 210 in the shape of a polygon such as a triangle, a hemisphere, and a rectangle.

In detail, the groove 212 of the upper substrate 210 has an interface where each interface meets to prevent overlapping and collision between the interfaces when forming the absorbent film 194, the protective film 192, and the photocuring agent layer 190. Grooves 212 are formed thereon. At this time, the groove 212 is formed in a polygonal shape, such as a triangle, hemispherical shape, square, etc., the height of the groove 212 is formed of 10 ~ 500mm, the width of the groove 212 is formed of 10 ~ 500mmdm.

Referring to FIG. 7C, a moisture absorbent film 194, a protective film 192, and a photocuring agent layer are formed between the lower substrate 101 formed as shown in FIG. 7A and the upper substrate 210 formed as shown in FIG. 7B. A fail turn is formed around the active area 190 so that the two substrates 101 and 210 are bonded to each other to form a light emitting display panel.

Specifically, the moisture absorbent film 194 is formed on the upper or lower substrates 101 and 210 along the periphery of the active area and is formed of a film using a mixed material in the form of a thin film containing BaO, CaO, etc. as a main component, and the protective film 192 is acrylate. It is formed into a film using a mixed material in the form of a thin film mainly composed of Epoxy-based polymer. In addition, the moisture absorbent and the protective films 192 and 194 have a transmittance of 50 to 100%. At this time, the moisture absorbent and the protective film (192,194) is formed to a thickness of 1000 ~ 0.5mm.

In addition, the photocuring agent layer 190 is formed by using a UV photocurable polymer liquid material containing an Acrylate, Epoxy-based polymer and an inorganic spacer for forming the thickness. The wavelength of UV light is formed at 175 ~ 450nm.

As such, the failed turn part including the moisture absorbent film 194, the protective film 192, and the photocuring agent layer 190 adheres to the upper and lower substrates 101 and 210, thereby forming the light emitting display panel.

In the detailed description of the present invention described above with reference to the preferred embodiment of the present invention, those skilled in the art or those skilled in the art having ordinary knowledge of the present invention described in the claims to be described later It is apparent that the present invention can be variously modified and changed without departing from the spirit and scope of the invention.

1 is a perspective view illustrating a light emitting display panel according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view of the light emitting display panel illustrated in FIG. 1.

3A to 3I are cross-sectional views illustrating a method of manufacturing a light emitting display panel according to an exemplary embodiment of the present invention.

4A through 4E are cross-sectional views illustrating a micro lens array according to an exemplary embodiment of the present invention.

5 is a cross-sectional view of a light emitting display panel according to a second exemplary embodiment of the present invention.

6 is a cross-sectional view of a light emitting display panel according to a third exemplary embodiment of the present invention.

7A to 7C are cross-sectional views illustrating a method of manufacturing a light emitting display panel according to a third embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

101: lower substrate 102: gate electrode

104: data line 106: gate insulating film

108: source electrode 110: drain electrode

112: semiconductor layer 118: inorganic protective film

120: organic protective film 122: contact hole

124: pixel electrode 126: bank insulating film

130: first electrode 132: organic layer

134: second electrode 140: upper substrate

152 and 164 first surface treatment film 152 and 162 organic insulating film

154 and 172: photocuring agent layer 156 and 168: second surface treatment film

158, 166, 176: Barrier layer

Claims (10)

Forming a light emitting cell on the lower substrate; Forming a failure turn portion formed around the active region of the lower substrate on which the light emitting cells are formed, the failure turn portion having an organic insulating film, a photocuring agent layer, at least one barrier layer, and at least one surface treatment film; And attaching an upper substrate so as to correspond to the lower substrate. The method of claim 1, The barrier layer may be formed of an inorganic insulating film such as SiNx, SiONx, or SiOx, or may be formed of a metal such as SiO ₂ , AlN, Al ₂ O ₃ , Cr ₂ O ₃ , Mo, CuO, Bi ₂ O ₃ , GaN, In ₂ O ₃ An inorganic insulating film is formed, The manufacturing method of the light emitting display panel characterized by the above-mentioned. The method of claim 1, And the barrier layer is formed to a thickness of 100 to 5000 GPa, and the surface treatment film is formed to have a thickness of 10 to 1000 GPa. The method of claim 1, The method may further include forming a fail-turned portion formed around the active region of the lower substrate on which the light emitting cells are formed and having an organic insulating layer, a photocuring agent layer, at least one barrier layer, and at least one surface treatment layer. Forming the organic insulating layer around the active region of the lower substrate on which the light emitting cells are formed; Forming a first surface treatment film by performing plasma treatment on the organic insulating film with a plasma forming gas; Forming a first barrier layer on the first surface treatment film; Forming a second surface treatment film by plasma treatment with a plasma forming gas on the first barrier layer; Forming the photocuring agent layer on the second surface treatment film; Forming a third surface treatment film by performing plasma treatment on the photocuring agent layer with the plasma forming gas; Forming a second barrier layer on the third surface treatment film; And plasma treating the second barrier layer with the plasma forming gas to form a third surface treatment film. The method of claim 1, The barrier layer may have a width wider than that of the organic insulating layer and the photocuring agent layer. The method of claim 5, The upper substrate is formed with a groove for inserting an absorbent in a position corresponding to the position where the failure turn is formed, the groove is formed with a height of 10 ~ 500mm, a light emitting display, characterized in that the width of 10 ~ 500mm Method of manufacturing the panel. Forming a light emitting cell on the lower substrate; Forming a failure turn portion including a moisture absorbent film, a protective film, and a photocuring agent layer around the active region of the lower substrate on which the light emitting cells are formed; And forming a groove in the upper substrate corresponding to the position where the fail turn portion is formed. The method of claim 7, wherein The moisture absorbent film is a film using a mixed material in the form of a thin film containing BaO, CaO as a main component capable of absorbing and removing oxygen, moisture, and outgassing gas from the outside, and the moisture absorbent film has a thickness of 1000 mm to 0.5 mm. The manufacturing method of the light emitting display panel characterized by the above-mentioned. The method of claim 7, wherein The protective film is a film using a mixed material in the form of a thin film mainly composed of Acrylate, Epoxy-based polymer, the protective film has a thickness of 1000 ~ 0.5mm, characterized in that the manufacturing method of the light emitting display panel. The method of claim 7, wherein The upper substrate is formed with a groove in order to prevent the interface collision and overlap between the absorbent film, the protective film, the photocuring agent layer in a position corresponding to the position where the failure turn is formed, the groove is formed of a height of 10 ~ 500mm And a width of 10 to 500 mm.

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