KR20170022587A - Organic light emitting diode panel and organic light emitting diode display and manufacturing method thereof - Google Patents

Abstract

An organic light emitting diode panel (116) according to an embodiment of the present invention comprises: a substrate (SUB); an anode electrode (Ano) on the substrate (SUB); a bank layer (BANK) having an opening part (OP) exposing the anode electrode (Ano); an organic light emitting layer (OLE) on the opening part (OP); a cathode electrode (Cat) facing the anode electrode (Ano) on the bank layer (BANK); a subsidiary electrode (SubE) of a plurality of metal dots, which is placed on the upper part of the bank layer (BANK) and connected to the cathode electrode (Cat). Therefore, electric resistance of the cathode electrode (Cat) can be reduced and light transmittance can be improved.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic light emitting diode (OLED) display panel, an organic light emitting diode (OLED) display device,

The present invention relates to an organic light emitting diode panel and an organic light emitting diode display device and a method of manufacturing the same.

2. Description of the Related Art In recent years, various flat panel displays (FPDs) have been developed to reduce weight and volume, which are disadvantages of cathode ray tubes. Such a flat panel display device includes a liquid crystal display (LCD), a field emission display (FED), a plasma display panel (PDP) And a light emitting device (Electroluminescence Device).

PDP has attracted attention as a display device that is most advantageous for large screen size but small size because of its simple structure and manufacturing process, but it has disadvantage of low luminous efficiency, low luminance and high power consumption. A TFT LCD to which a thin film transistor (hereinafter referred to as "TFT") is applied as a switching element is the most widely used flat panel display device, but it has a problem that the viewing angle is narrow and the response speed is low because it is a light emitting device. On the other hand, the electroluminescent device is divided into an inorganic light emitting diode display device and an organic light emitting diode display device according to the material of the light emitting layer. In particular, the organic light emitting diode display device uses self light emitting devices that emit self- Brightness and viewing angle are large.

The organic light emitting diode display controls the voltage between the gate terminal and the source terminal of the driving transistor to control the current flowing from the drain to the source of the driving transistor.

The current flowing from the drain to the source of the driving transistor flows through the organic light emitting diode and emits light, and the degree of light emission can be controlled by controlling the amount of current.

On the other hand, Soluble OLED, which is leading the price drop of OLED products, is getting attention.

Soluble OLED can be manufactured in RGB method without cutting the substrate, which can reduce manufacturing cost. An ink-jet printing method can be used to produce such a Soluble OLED.

1 is a cross-sectional view of a conventional organic light emitting diode display panel having a barrier rib structure.

Referring to FIG. 1, in the case of the top emission organic light emitting diode display panel 10, light is emitted from the anode electrode 11 toward the cathode electrode 12. Therefore, in order to increase the light transmittance of the cathode electrode 12, it is necessary to make the thickness of the cathode electrode 12 thin. However, there is a problem that the resistance increases as the thickness of the cathode electrode 12 becomes thinner. In order to solve this problem, the auxiliary electrode 13 is further formed on the substrate 14, and the resistance is lowered by contacting the cathode electrode 12 and the auxiliary electrode 13 with each other. A barrier rib 15 is formed in a stepper manner for the contact between the auxiliary electrode 13 and the cathode electrode 12 so that the organic layer 16 is formed in a part of the upper surface of the auxiliary electrode 13 The contact area with the cathode electrode 12 is formed in a part of the upper surface of the auxiliary electrode 13. [ Also, the cathode electrode 12 is made of an oxide-based IZO (Indium Zinc Oxide) electrode material so that the cathode electrode 12 penetrates into the A region.

The conventional organic light emitting diode display panel 10 having the barrier rib structure has the following problems.

(1) The process of forming the barrier ribs 15 is complicated.

(2) There is a problem of yield reduction due to the complexity of the manufacturing process.

(3) The cathode electrode 12 is made of a metal material and a material having excellent step coverage characteristics such as indium tin oxide (ITO), indium zinc oxide (IZO) and indium tin zinc oxide Tin Zinc Oxide (ITZO), the light transmittance is lowered.

(4) In the manufacturing process using the sputtering method using indium tin oxide, indium zinc oxide and indium tin zinc oxide, which are excellent in step coverage, the anode electrode 11 and the cathode electrode 11, There is a problem of a short circuit of the power supply 12.

(5) the presence or absence of the contact of the auxiliary electrode 13 according to the shape of the partition wall, and ultimately additional yield loss occurs.

Embodiments of the present invention can provide an organic light emitting diode panel and an organic light emitting diode display device and a method of manufacturing the same that can simplify a manufacturing process and reduce a yield by eliminating a barrier rib process.

In addition, embodiments of the present invention can solve the problem of short-circuiting between electrodes according to lowering the resistance of a cathode electrode without using an electrode material in which particles are well formed, and an organic light emitting diode display device and a manufacturing method thereof .

The organic light emitting diode panel 116 according to the embodiment of the present invention includes a substrate SUB, an anode electrode Ano on the substrate SUB, and an opening OP exposing the anode electrode Ano. An organic light emitting layer OLE on the opening OP and a cathode electrode Cat on the bank layer BANK opposite to the anode electrode Ano and on the bank layer BANK, And an auxiliary electrode (SubE) of a plurality of metal dots connected to the organic light emitting diode (Cat).

Since the organic light emitting diode panel 116 according to the embodiment does not use the barrier rib structure, the yield can be improved. Further, since the barrier rib structure is not used, the electrode material of the cathode electrode Cat can be formed by using the IZO It is not necessary to use a material and can be formed of a material having conductivity such as silver (Ag), magnesium (Mg), etc., thereby solving the problem of generating particles. Further, since the barrier rib structure is not used, It is possible to prevent the contact between the conventional cathode electrode and the auxiliary electrode according to the shape thereof. In addition, the thickness of the cathode (Cat) can be reduced, light transmittance can be improved, and the increase in resistance as the thickness of the cathode (Cat) decreases can be compensated through the auxiliary electrode (SubE). In addition, since the auxiliary electrode (SubE) is formed by printing with an inkjet method, the width of the non-emission region (NA) decreases with an increase in resolution, which makes it difficult to apply the mask.

In the organic light emitting diode panel 116 according to the exemplary embodiment of the present invention, the substrate SUB may include n and n + 1th pixel regions, which are defined by one gate line G and a plurality of data lines D, And the auxiliary electrode (SubE) is disposed on the bank layer (BANK) disposed between the light emitting region (AA1) of the nth pixel region and the light emitting region (AA2) of the (n + A light emitting diode panel may be provided. The light emitting region is a light transmitting region, so that the thickness of the cathode electrode Cat is thinned to increase the transmission of light and the auxiliary electrode SubE Can be disposed between the light emitting regions of the adjacent pixel regions so that the light transmittance does not decrease.

In addition, in the organic light emitting diode panel 116 according to the embodiment of the present invention, the cathode electrode Cat may provide an organic light emitting diode panel including magnesium (Mg) and / or silver (Ag) The electrode material of the cathode electrode Cat can be formed of a material having conductivity such as silver (Ag), magnesium (Mg), or the like without using a material such as IZO which is advantageous to the sputtering method, Particle) is generated.

Also, the organic light emitting diode panel 116 according to an embodiment of the present invention may provide an organic light emitting diode panel having an upper light emitting type. [0030] In the case of the top light emitting organic light emitting diode display panel 116, The thickness of the cathode electrode Cat can be made thin and the light transmittance can be improved and the thickness of the cathode electrode Cat can be reduced, The increase in resistance as the thickness of Cat becomes thinner can be compensated through the auxiliary electrode (SubE).

In addition, in the organic light emitting diode panel 116 according to the embodiment of the present invention, the auxiliary electrode SubE may provide an organic light emitting diode panel made of silver (Ag).

이상인 유기발광다이오드 패널을 제공할 수도 있다.In addition, in the organic light emitting diode panel 116 according to the embodiment of the present invention, the conductivity of the auxiliary electrode may be a metal having a suitable level of conductivity for lowering the resistance,

Or more may be provided.

Further, in the organic light emitting diode panel 116 according to the embodiment of the present invention, the viscosity of the auxiliary electrode is 100 CP or less in consideration of the problem of clogging of the ink jet head when the viscosity is increased and the cohesive force is weakened when the viscosity is low. It is also possible to provide an organic light emitting diode panel having 10 CP or more.

The organic light emitting diode display according to an embodiment of the present invention includes a substrate SUB, an anode electrode Ano on the substrate SUB, and an opening OP exposing the anode electrode Ano. An organic light emitting layer OLE on the opening OP and a cathode electrode Cat on the bank layer BANK opposite to the anode electrode Ano and on the bank layer BANK, An organic light emitting diode panel 116 including an auxiliary electrode SubE of a plurality of metal dots connected to the cathode electrode Cat and an organic light emitting diode panel 116 including an anode electrode Ano and an anode electrode Cat, An organic light emitting diode display device including the driving circuits 128 and 120 may be provided.

The substrate SUB of the organic light emitting diode display device according to the embodiment of the present invention includes n and n + 1 th pixel regions defined by one gate line G and a plurality of data lines D And the auxiliary electrode SubE is disposed on the bank layer BANK disposed between the light emitting region AA1 of the nth pixel region and the light emitting region AA2 of the (n + 1) A display device may be provided.

Also, the cathode electrode of the organic light emitting diode display according to the embodiment of the present invention may be provided with at least one of magnesium (Mg) and silver (Ag).

Further, the auxiliary electrode of the organic light emitting diode display according to the embodiment of the present invention is made of silver (Ag).

Also, the auxiliary electrode (SubE) of the organic light emitting diode display device according to the embodiment of the present invention may provide an organic light emitting diode display device formed of a plurality of metal dots.

A method of manufacturing an organic light emitting diode display device according to an embodiment of the present invention includes the steps of forming an anode electrode Ano on a substrate SUB and forming an opening OP to expose the anode electrode Ano, Forming an organic light emitting layer (OLE) in the opening OP, forming a cathode electrode Cat on the organic light emitting layer OLE and the bank layer BANK, Forming an auxiliary electrode (SubE) by printing a plurality of metal dots on a cathode electrode (Cat) formed on the bank layer (BANK) by an ink jet method . ≪ / RTI >

The embodiment of the present invention can simplify the manufacturing process and reduce the yield by eliminating the process of the barrier ribs and solve the short circuit between the electrodes as the resistance of the cathode electrode is lowered without using the electrode material in which the particles are well formed An organic light emitting diode (OLED) display panel, and a method of manufacturing the same.

1 is a sectional view of a conventional organic light emitting diode display panel having a barrier rib structure.
2 is a view showing a structure of an organic light emitting diode.
FIG. 3 is a circuit diagram showing an equivalent pixel of an organic light emitting diode display according to an embodiment of the present invention; FIG.
4 is a block diagram illustrating an organic light emitting diode display device according to an embodiment of the present invention.
5 is a sectional view of an organic light emitting diode panel according to an embodiment of the present invention.
FIG. 6 is an equivalent circuit diagram illustrating an OLED pixel structure according to an embodiment, and FIG. 7 is a diagram illustrating an OLED pixel structure of a bottom emission type, which is cut by a cutting line AB.
FIGS. 8 and 9 are experimental results showing the occurrence of a dark sopt at the time of initial lighting with different cathode electrode materials.
10 is a simulation result of a voltage increase amount applied to a cathode electrode in a panel according to an embodiment of the present invention.
FIG. 11 is a graph showing a simulation result of voltage rising time of a voltage applied to a cathode electrode in a panel having a conventional barrier structure and an auxiliary electrode.

Hereinafter, an organic light emitting diode (OLED) panel and an organic light emitting diode (OLED) display device according to embodiments of the present invention will be described in detail with reference to the drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the size and thickness of an apparatus may be exaggerated for convenience. Like reference numerals designate like elements throughout the specification.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. However, it should be understood that the present invention is not limited to the embodiments disclosed herein but may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification. The dimensions and relative sizes of the layers and regions in the figures may be exaggerated for clarity of illustration.

It will be understood that when an element or layer is referred to as being another element or "on" or "on ", it includes both intervening layers or other elements in the middle, do. On the other hand, when a device is referred to as "directly on" or "directly above ", it does not intervene another device or layer in the middle.

The terms spatially relative, "below," "lower," "above," "upper," and the like, And may be used to easily describe the correlation with other elements or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element. Thus, the exemplary term "below" can include both downward and upward directions.

The terminology used herein is for the purpose of describing embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. &Quot; comprise "and / or" comprising ", as used in the specification, means that the presence of stated elements, Or additions.

≪ Structure of organic light emitting diode &

2 is a view showing a structure of an organic light emitting diode.

The organic light emitting diode panel and the organic light emitting diode display may have an organic light emitting diode as shown in FIG.

The organic light emitting diode may include organic compound layers (HIL, HTL, EML, ETL, EIL) formed between the anode electrode and the cathode electrode.

The organic compound layer includes a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and an electron injection layer ).

When a driving voltage is applied to the anode electrode and the cathode electrode, holes passing through the HTL and electrons passing through the ETL are transferred to the EML to form excitons, Thereby generating visible light.

In addition, the organic light emitting diode may include red, green, or blue layers doped with the dopant of the light emitting layer according to a color to be displayed, Organic light emitting diode.

The organic light emitting diode display device arranges the pixels including the organic light emitting diode in a matrix form and controls the brightness of the pixels selected by the scan pulse according to the gray level of the digital video data.

Such an organic light emitting diode display device is divided into a passive matrix type and an active matrix type using a TFT as a switching element.

Among these, the active matrix method selects a pixel by selectively turning on the TFT as the active element and maintains the light emission of the pixel with the voltage held in the storage capacitor.

≪ Equivalent circuit diagram of active matrix type pixel &

3 is a circuit diagram showing one pixel equivalently in an organic light emitting diode display according to an embodiment of the present invention.

3, the pixel of the organic light emitting diode display according to the embodiment of the present invention includes an organic light emitting diode (OLED), data lines D and gate lines G intersecting with each other, A scan switch SW for sequentially transmitting data to the pixels in the scan pulse SP, a drive switch DR for generating a current by a voltage between the gate and the source terminals, And a storage capacitor Cst. The scan switch SW and the drive switch DR may be formed of an N-type MOS-FET.

The structure consisting of two transistors SW and DR and one capacitor Cst can be simply referred to as a 2T-1C structure.

The scan switch SW is turned on in response to the scan pulse SP from the gate line G to conduct a current path between the source electrode and the drain electrode.

The data voltage from the data line D during the on time period of the scan switch SW is supplied to the gate electrode of the drive switch DR and the storage capacitor Cst via the source electrode and the drain electrode of the scan switch SW .

The driving switch DR controls the current flowing in the organic light emitting diode OLED according to the difference voltage Vgs between the gate electrode and the source electrode of the driving switch DR.

The storage capacitor Cst keeps the voltage supplied to the gate electrode of the driving switch DR constant for one frame period by storing the data voltage applied to one electrode of the storage capacitor Cst.

An organic light emitting diode (OLED) having the structure as shown in FIG. 2 is connected between the source electrode of the driving switch DR and the low potential driving voltage source VSS.

The current flowing through the organic light emitting diode OLED is proportional to the brightness of the pixel, which is determined by the gate-source voltage of the driving switch DR.

The brightness of the pixel as shown in FIG. 3 is proportional to the current flowing in the organic light emitting diode OLED, as shown in Equation 1 below.

Equation 1

는 구동 스위치(DR)의 이동도 및 기생용량에 의해 결정되는 상수값을 각각 의미한다.Here, 'Vgs' is the difference voltage between the gate voltage Vg and the source voltage Vs of the drive switch DR, 'Vdata' is the data voltage, 'Vinit' is the initialization voltage, 'Ioled' Vth 'is the threshold voltage of the drive switch DR,

Quot; means a constant value determined by the mobility and the parasitic capacitance of the drive switch DR.

≪ Block Diagram of Organic Light Emitting Diode Display Device >

4 is a block diagram illustrating an organic light emitting diode display device according to an embodiment of the present invention.

4, an organic light emitting diode display device according to an embodiment of the present invention includes a display panel 116, an organic light emitting diode panel, a gate driving circuit 118, a data driving circuit 120, and a timing controller 124 .

개의 화소들(122)을 구비할 수 있다.The display panel 116 includes m data lines D1 to Dm, k sensing lines S1 to Sk, n gate lines G1 to Gn, and j Lt; RTI ID = 0.0 > SC1 < / RTI >

Pixels 122 may be provided.

Signal lines for supplying the first driving power Vdd to the respective pixels 122 and signal lines for supplying the second driving power Vss may be formed on the display panel 116. [ Here, the first driving power supply Vdd and the second driving power supply Vss may be generated from the high potential driving voltage source VDD and the low potential driving voltage source VSS, respectively.

The gate drive circuit 118 generates a scan pulse SP in response to the gate control signal GDC from the timing controller 124 and sequentially supplies the scan pulse SP to the gate lines G1 to Gn.

The gate drive circuit 118 can also output a control signal SCS from the timing controller 124 and the sensing switch in each pixel can be controlled by the sensing control signal SCS.

The gate driving circuit 118 outputs both the scan pulse SP and the sensing control signal SCS. However, the present invention is not limited thereto, and the timing control circuit 124 may control the sensing control signal SCS It is also possible to provide a sensing switch control driver which can output a large amount of data.

The data driving circuit 120 can be controlled by the data controller DDC from the timing controller 124 and outputs the sensing voltage to the data lines D1 to Dm and the sensing voltages S1 to Sk .

Each of the data lines D1 to Dm may be connected to each of the pixels 122 to apply a data voltage to each of the pixels 122. [

Each of the sensing lines S1 to Sk may be connected to the pixel 122 to supply a sensing voltage and measure a sensing voltage on the sensing lines S1 to Sk. Specifically, by supplying the initialization voltage using one sensing line (S1 to Sk), it is possible to detect the sensing voltage using charging and floating with the initialization voltage.

The data driving circuit 120 can output or detect the data voltage and the sensing voltage. However, the present invention is not limited to this, and may include a separate driver capable of outputting or detecting the sensing voltage.

≪ Equivalent circuit diagram of pixel structure according to the embodiment >

5 is a cross-sectional view of an organic light emitting diode panel according to an embodiment of the present invention.

5, an organic light emitting diode panel 116 according to an embodiment includes a plurality of pixel regions and includes an nth pixel region and an (n + 1) th pixel region among a plurality of pixel regions arranged in a gate line (G) direction, Each of the regions may include a light emitting region AA and a non-light emitting region NA.

The bank layer BANK having the opening OP corresponding to the light emitting region AA of the pixel region can be disposed on the non-light emitting region NA on the substrate SUB.

the first anode electrode Ano1 and the first organic light emitting layer OLE1 are disposed on the first light emitting area AA1 of the nth pixel region, that is, on the first opening OP1, the first anode electrode Ano1, The second anode electrode Ano2 and the second organic light emitting layer OLE2 are disposed on the second light emitting area AA2 of the (n + 1) th pixel region, that is, the second opening OP2, The second anode electrode Ano2 and the second organic light emitting layer OLE2 may be disposed on the first anode electrode A. The first and second anode electrodes Ano1 and Ano2 may be formed at one time in the same process. And the second organic emission layers OLE1 and OLE2 may be formed at the same time in the same process and may be formed on the bank layer BANK when forming the first and second organic emission layers OLE1 and OLE2.

Also, a cathode electrode Cat may be formed on the substrate SUB, and the cathode electrode Cat may be disposed covering all the n and (n + 1) th pixel regions.

An upper portion of the bank layer BANK forming the boundary between the first light emitting region AA1 of the nth pixel region and the second light emitting region AA2 of the (n + 1) th pixel region, more specifically, An auxiliary electrode SubE may be disposed on the cathode electrode Cat above the bank layer BANK.

The auxiliary electrode (SubE) may be electrically connected to the cathode (Cat) to reduce the electrical resistance of the cathode (Cat).

The auxiliary electrode (SubE) may be formed by printing with an inkjet method. Therefore, the width of the second non-emission area NA2 decreases according to the increase in resolution, which makes it difficult to apply the mask.

FIG. 6 is an equivalent circuit diagram illustrating an OLED pixel structure according to an embodiment, and FIG. 7 is a diagram illustrating a structure of an OLED pixel of a bottom emission type cut by a perforated line A-B.

5 to 7, the organic light emitting diode panel 116 according to the embodiment of the present invention includes n-1, n, and n (n-1) defined by one gate line G and a plurality of data lines D, A bank layer BANK having an opening OP for exposing the anode electrode Ano, a substrate layer SUB having a first pixel region, an anode electrode Ano disposed on the substrate SUB, And an organic light emitting layer (OLE) disposed on the light emitting layer (OP).

In addition, the organic light emitting layer OLE of the organic light emitting diode panel 116 according to the embodiment of the present invention includes an organic material that emits white light and is disposed on a substrate (not shown) facing the substrate SUB And the color filter CF facing the opening OP may include an organic material emitting light of any one of red, green and blue colors.

The substrate SUB of the organic light emitting diode panel 116 according to the embodiment may be formed of glass, metal, or a flexible material. The flexible material may be plastic, and may be formed of a material having excellent heat resistance and durability. For example, the substrate SUB may be formed of a material selected from the group consisting of polyethersulphone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylenenaphthalate (PET), polyethylene terephthalate polyehtyleneterephthalate), and the like.

The pixel structure on the substrate SUB includes a scan thin film transistor SW, a drive switch DR connected to the scan switch SW, and an organic light emitting diode DR connected to the drive switch DR. And a diode (OLED).

The scan and drive switches SW and DR may transmit a power supply voltage based on the supplied data signal to the anode electrode Ano.

The scan switch SW is formed at a portion where the gate line G and the data line D intersect each other. The scan switch SW functions to select pixels. The scan switch SW includes a scan gate electrode sGE branched from the gate line G, a scan semiconductor layer sAL, a scan source electrode sS and a scan drain electrode sD can do.

Further, the driving switch DR serves to drive the organic light emitting diode OLED of the pixel selected by the scan switch SW. The driving switch DR is connected to the driving gate electrode dG connected to the scanning drain electrode sD of the scan switch SW and the driving semiconductor layer dAL and the first driving power supply wiring A driving source electrode dS connected to the drain electrode VDD, and a driving drain electrode dD. The driving drain electrode dD of the driving switch DR may be connected to the anode electrode Ano of the organic light emitting diode OLED.

The substrate SUB includes a plurality of pixel regions (n-1, n, n + 1; n is a natural number) defined by the gate and data lines G and D, The pixel SUB may include an n-1th pixel region, an nth pixel region, and an n + 1 th pixel region along one gate line G. [ Th pixel region may be sequentially provided.

The scan electrodes SW and the gate electrodes sGE and dGE of the drive switch DR may be formed on the substrate SUB on the first non-emission region NA1 of the nth pixel region. A gate insulating film GI is formed on the gate electrodes sGE and dGE. The semiconductor layers sAL and dAL may be formed on a part of the gate insulating film GI overlapping with the gate electrodes sGE and dGE. The source electrodes sS and dS and the drain electrodes sD and dD may be formed facing each other at a predetermined interval on the semiconductor layers sAL and dAL. The drain electrode sD of the scan switch SW can be in contact with the driving gate electrode dGE of the driving switch DR through the contact hole formed in the gate insulating film GI. A protective layer PAS covering the switch DR can be applied to the entire surface.

The inorganic semiconductor may include CdS, GaS, ZnS, CdSe, ZnSe, CdTe, SiC, and Si. The semiconductor layers sAL and dAL may be formed of an inorganic semiconductor or an organic semiconductor. The organic semiconductors forming the semiconductor layers (sAL, dAL) include, for example, polythiophene and derivatives thereof, polyparaphenylenevinylene and derivatives thereof, polyparaphenylene and derivatives thereof, polyfluorene and poly Polythiophene-vinylene and derivatives thereof, polythiophene-heterocyclic aromatic copolymers and derivatives thereof, oligosaccharides such as pentacene, tetracene and naphthalene and derivatives thereof, alpha-6 -Thiophenes, oligothiophenes of alpha-5-thophenes and their derivatives, phthalocyanines containing and not containing metals and their derivatives, pyromellitic dianhydrides or pyrodellitic diimides and their derivatives , Pyrylenetetraquinic acid dianhydride or pyrylenetetracarboxylic diimide, and derivatives thereof.

An anode electrode Ano of the organic light emitting diode OLED may be formed on the overcoat layer OC. The anode electrode Ano may be formed of a transparent electrode and a reflective electrode. When the electrode is used as a transparent electrode, ITO, IZO, ZnO, or In2O3 may be used. When the electrode is used as a reflective electrode, , ITO, IZO, ZnO, or In 2 O 3 can be formed on the reflective film after forming a reflective film with a metal such as Pt, Pd, Au, Ni, Nd, Ir, Cr or a compound thereof.

Here, the anode electrode Ano may be connected to the drain electrode dD of the driving switch DR through the contact hole H formed in the overcoat layer OC and the protective layer PAS.

Emitting region NA formed with a scan switch SW, a drive switch DR and various wirings D, S and VDD for defining a pixel region on a substrate SUB on which an anode electrode Ano is formed, And a bank layer BANK for separating the light emitting region AA in which the organic light emitting diode OLED is formed. The bank layer BANK is formed by connecting the organic light emitting layer OLE and the anode electrode Ano The area can be determined. Therefore, the light emitting region AA can be determined by the bank layer BANK.

The bank layer BANK may include any one of benzocyclobutene (BCB) series resin, acryl series resin, and polyimide resin. However, the present invention is not limited thereto.

The anode electrode Ano can be exposed by the opening OP of the bank layer BANK. An organic light emitting layer OLE and a cathode electrode layer Cat may be sequentially stacked on the bank layer BANK and the anode electrode Ano. Thus, the organic light emitting diode (OLED) connected to the drive switch DR can be completed.

According to the embodiment, since the barrier rib structure is not used, the cathode electrode Cat may be formed of indium tin oxide (ITO), indium zinc oxide (IZO) or the like, which is excellent in step coverage characteristics. And an electrode made of silver (Ag) and magnesium (Mg), that is, a single-layer electrode having conductivity, without using indium tin zinc oxide (ITZO) or the like.

The ratio of silver (Ag) to magnesium (Mg) in the cathode electrode (Cat) is preferably set in consideration of a low transmittance of silver (Ag), a low resistance characteristic and a high transmittance of magnesium (Mg) .

The organic light emitting layer OLE may be disposed using a printing technique such as ink jet printing or nozzle printing. In the organic light emitting layer (OLE) patterning process using such a printing technique, A material or a polymer liquid material may be injected between the bank layers BANK formed by the bank layer BANK and dried to form the organic light emitting layer OLE.

The auxiliary electrode SubE may be disposed on the bank layer BANK on the non-emission area NA2 of the (n + 1) th pixel region. Specifically, the auxiliary electrode SubE may be disposed on the The auxiliary electrode SubE may be disposed on the bank layer BANK on the non-emission region NA2 of the first pixel region.

The auxiliary electrode (SubE) may be formed by printing and printing a plurality of metal dots in an ink-jet method.

이상이 되는 것이 바람직하다.The auxiliary electrode (SubE) may be made of a metal having conductivity, and may be, for example, silver (Ag). However, it is not limited thereto, and it is possible to use a metal having an appropriate level of conductivity necessary for lowering the resistance. Considering the resistance value,

Or more.

In addition, in consideration of the problem that the ink jet head is clogged when the viscosity is high and the cohesive force is weakened when the viscosity is low, it is preferable that the viscosity is 100 CP or less and the minimum is 10 CP or more.

Also, the diameter of the metal dot may be varied according to the width of the bank layer BANK. When the silver dot is used as the metal dot, 60 μm is suitable. The diameter of the metal dots can be further reduced as the width of the bank is narrowed.

Since the organic light emitting diode panel 116 according to the embodiment does not use the barrier rib structure, the yield can be improved.

In addition, since the barrier rib structure is not used, the electrode material of the cathode electrode Cat need not be made of a material such as IZO which is advantageous to the sputter method, and can be formed of a material having conductivity such as silver (Ag), magnesium (Mg) This can solve the problem of creating particles.

In addition, the embodiment can improve the light transmittance by using a single layer electrode composed of silver (Ag) and magnesium (Mg). Therefore, when forming the conventional cathode electrode Cat, The problem of lowering the light transmittance due to the application of the structure can be solved.

In addition, since the barrier rib structure is not used, it is possible to prevent the contact between the conventional cathode electrode and the auxiliary electrode depending on the shape of the barrier rib.

In addition, since the top emission organic light emitting diode display panel 116 transmits light through the cathode electrode Cat, the embodiment can reduce the thickness of the cathode electrode Cat.

In addition, the thickness of the cathode (Cat) can be reduced, light transmittance can be improved, and the increase in resistance as the thickness of the cathode (Cat) decreases can be compensated through the auxiliary electrode (SubE).

In addition, since the cathode electrode Cat is not a multi-layered structure of metal, the light transmittance can be improved. Thus, when forming the cathode electrode Cat, the ratio of silver (Ag) can be increased to lower the resistance.

In addition, since the auxiliary electrode (SubE) is formed by printing with an inkjet method, the width of the non-emission region (NA) decreases with an increase in resolution, which makes it difficult to apply the mask.

Since the light emitting region is a light transmitting region, the thickness of the cathode electrode Cat is thinned to increase the transmission of light. In order to reduce the resistance of the cathode electrode Cat, the auxiliary electrode SubE is divided into the light emitting region It is possible to prevent the light transmittance from being lowered.

FIGS. 8 and 9 are experimental results in which a dark spot is generated at the time of initial lighting by different cathode materials.

8 shows an initial lighting screen of the organic light emitting diode panel 116 in which the cathode electrode is formed of a mixed metal of silver (Ag) and magnesium (Mg) according to an embodiment of the present invention. And a cathode electrode 12 having a barrier 15 structure and including an IZO metal material.

In the comparative example of FIG. 9, dark spots due to a short circuit between the anode electrode 11 and the cathode electrode 12 occur. However, FIG. 8 shows a dark spots (Dark sopt) is significantly reduced.

FIG. 10 is a graph illustrating a result of simulating an increase in the voltage applied to the cathode electrode in the panel according to the embodiment of the present invention. FIG. 11 is a graph showing the voltage applied to the cathode electrode in the panel having the conventional barrier structure and the auxiliary electrode, And the rise time of the load is simulated.

The auxiliary electrode (SubE) according to the embodiment of the present invention is formed of a silver (Ag) material and the auxiliary electrode 12 of the comparative example is formed of a copper (Cu) material. SubE) and the conventional auxiliary electrode 12 have the same width and wiring width.

Fig. 10 shows that the voltage increase is almost equal to that of Fig. 11, which is a comparative example. Therefore, it can be seen that the embodiment of the present invention has a remarkable effect of solving the problems of the above-described prior arts while showing a voltage rise amount almost equal to that of the prior art.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

11 anode electrode
12 cathode electrode
13 auxiliary electrode
14 substrate
15 barrier
16 organic layer
116 Organic Light Emitting Diode Panel
118 gate drive circuit
120 data driving circuit
122 pixels, a sub pixel
124 Timing controller
SUB substrate
NA non-emission region
AA light emitting region
OLED organic light emitting diode
Anode anode electrode
Cat cathode electrode layer
OLE organic light emitting layer
BANK bank layer
OP opening
SW scan switch
Source electrode for sS scan
drain electrode for sD scan
gate electrode for sGE scan
Semiconductor layer for sAL scan
DR drive switch
source electrode for driving dS
The drain electrode for driving dD
gate electrode for driving dGE
a semiconductor layer for dAL driving

Claims (14)

Board;
An anode electrode on the substrate;
A bank layer having an opening exposing the anode electrode;
An organic light emitting layer on the opening;
A cathode electrode facing the anode electrode and on the bank layer;
And a plurality of auxiliary electrodes of metal dots arranged above the bank layer and connected to the cathode electrode. The method according to claim 1,
Wherein:
An n < th > pixel region defined by one gate line and a plurality of data lines,
Wherein the auxiliary electrode is disposed above the bank layer disposed between the light emitting region of the nth pixel region and the light emitting region of the (n + 1) th pixel region. 3. The method of claim 2,
Wherein the cathode electrode comprises magnesium (Mg) and / or silver (Ag). The method according to claim 1,
An organic light emitting diode panel having a top emission type. The method according to claim 1,
Wherein the auxiliary electrode comprises silver (Ag). 6. The method of claim 5,
The conductivity of the auxiliary electrode

Organic light emitting diode panel. 6. The method of claim 5,
And the viscosity of the auxiliary electrode is 100 CP or less and 10 CP or more. An organic electroluminescent device comprising: a substrate; an anode electrode on the substrate; a bank layer having an opening exposing the anode electrode; an organic light emitting layer on the opening; a cathode electrode on the bank layer; An organic light emitting diode (OLED) display panel including a plurality of metal dots connected to the cathode electrode, and a driving circuit for applying an electric field between the anode electrode and the cathode electrode, . 9. The method of claim 8,
Wherein:
1, n, and n + 1th pixel regions defined by one gate line and a plurality of data lines,
And the auxiliary electrode is disposed above the bank layer disposed between the light emitting region of the (n-1) th pixel region and the light emitting region of the nth pixel region. 10. The method of claim 9,
Wherein the cathode electrode comprises magnesium (Mg) and / or silver (Ag). 9. The method of claim 8,
And the auxiliary electrode is made of silver (Ag). 12. The method of claim 11,
The conductivity of the auxiliary electrode

Organic light emitting diode display device. 12. The method of claim 11,
Wherein the auxiliary electrode has a viscosity of 100 CP or less and 10 CP or more. Forming an anode electrode on the substrate;
Forming a bank layer having an opening exposing the anode electrode;
Forming an organic emission layer on the opening;
Forming a cathode electrode on the organic light emitting layer and the bank layer;
And printing a plurality of metal dots on the cathode electrode formed on the bank layer by an ink jet method to form an auxiliary electrode.

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