KR20110070383A - Organic light emitting diode display device and manufacturing method of the same - Google Patents

Abstract

PURPOSE: An organic light emitting diode display device and a manufacturing method thereof are provided to reduce power consumption by using a pixel area as a light emitting area. CONSTITUTION: An organic light emitting diode is formed on a substrate. A buffer layer is formed on the organic light emitting diode. A scan line, a data line(DL), and a driving current wire are formed on the buffer layer. The data line is orthogonal to the scan line. A thin film transistor connected to the organic light emitting diode is located on the buffer layer. The thin film transistor includes a gate electrode(GDR), a source electrode(SDR), and a drain electrode(DDR) facing the source electrode.

Description

Organic light emitting diode display and manufacturing method thereof {ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME}

The present invention relates to an organic light emitting diode display and a method of manufacturing the same. In particular, the present invention relates to a bottom emission type organic light emitting diode display device using the entire pixel area as a light emitting area and requiring no sealing material for protecting the device, and a method of manufacturing the same.

Recently, various flat panel displays have been developed to reduce weight and volume, which are disadvantages of cathode ray tubes. Such flat panel displays include liquid crystal displays (LCDs), field emission displays (FEDs), plasma display panels (PDPs), and electroluminescence devices (ELs). have.

Among them, electroluminescent devices are classified into inorganic electroluminescent devices and organic light emitting diode devices according to the material of the light emitting layer. The electroluminescent devices are self-luminous devices that emit light by themselves, and have a high response speed and high luminous efficiency, luminance, and viewing angle. 1 is a view showing the structure of an organic light emitting diode. The organic light emitting diode includes an organic electroluminescent compound layer electroluminescent as shown in FIG. 1, and a cathode and an anode facing each other with the organic electroluminescent compound layer interposed therebetween. The organic electroluminescent compound layer includes a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and an electron injection layer (Electron injection). layer, EIL). As such, the organic light emitting diode has an exciton formed in the excitation process when holes and electrons injected into the anode and the cathode are recombined in the emission layer (EML), and due to energy from the excitons Emit light.

The organic light emitting diode display displays an image by electrically controlling the amount of light generated from the light emitting layer EML of the organic light emitting diode as shown in FIG. 1. Such organic light emitting diode display (OLED) includes a passive matrix type organic light emitting diode display (PMOLED) and an active matrix type organic light emitting diode display (OLED). Active Matrix type Organic Light Emitting Diode display, AMOLED).

An active matrix type organic light emitting diode display (AMOLED) displays an image by controlling a current flowing through the organic light emitting diode using a thin film transistor (TFT). FIG. 2 is a plan view illustrating the structure of one pixel in the AMOLED of FIG. 1. FIG. 3 is a cross-sectional view illustrating a structure of an AMOLED taken along a cutting line A-A 'in FIG. 2. 2 to 3, the active matrix organic light emitting diode display device is a switching thin film transistor (SWTFT), a driving TFT (DRTFT) connected to a switching TFT (SWTFT), and an organic light emitting diode (OLED) connected to a driving TFT (DRTFT). It includes.

The switching TFT SWTFT is formed at the intersection of the scan line SL and the data line DL. The switching TFT (SWTFT) functions to select a pixel. The switching TFT SWT includes a gate electrode GSW branching from the scan line SL, a semiconductor layer ASW, a source electrode SSW, and a drain electrode DSW. The driving TFT (DRTFT) serves to drive the organic light emitting diode (OLED) of the pixel selected by the switching TFT (SWTFT). The driving TFT DRTFT includes a gate electrode GDR connected to the drain electrode DSW of the switching TFT SWT, a source electrode SDR connected to the semiconductor layer ADR, the driving current transmission line VDD, and a drain electrode. (DDR). The drain electrode DDR of the driving TFT DRTFT is connected to the anode ANO of the organic light emitting diode OLED.

Referring to FIG. 4, gate electrodes GSW and GDR of a switching TFT SWTFT and a driving TFT DRTFT are formed on a substrate SUB of an active matrix organic light emitting diode display. The gate insulating film GI is covered on the gate electrodes GSW and GDR. The semiconductor layers ASW and ADR are formed in a part of the gate insulating film GI overlapping the gate electrodes GSW and GDR. On the semiconductor layers ASW and ADR, source electrodes SSW and SDR and drain electrodes DSW and DDR are formed to face each other at a predetermined interval. The drain electrode DSW of the switching TFT SWT contacts the gate electrode GDR of the driving TFT DRTFT through a contact hole formed in the gate insulating layer GI. A protective layer PASI covering the switching TFT (SWTFT) and the driving TFT (DRTFT) having such a structure is applied to the entire surface. The anode ANO of the organic light emitting diode OLED is formed on the passivation layer PASI. Here, the anode ANO is connected to the drain electrode DDR of the driving TFT DRTFT through a contact hole formed in the protective layer PASI.

On the substrate on which the anode electrode ANO is formed, a non-light emitting area in which a switching TFT (SWTFT), a driving TFT (DRTFT), and various wirings DL, SL, and VDD are formed and a light emitting area in which an organic light emitting diode (OLED) is formed are formed. A bank pattern BANK is formed. In the bank pattern BANK, when the TFTs SWTFT and DRTFT and the various wirings DL, SL, and VDD are formed, the surface is not smooth. This is to prevent deterioration of organic matter in the part. That is, a non-light emitting region in which a switching TFT (SWTFT), a driving TFT (DRTFT), and various wirings DL, SL, and VDD are formed, and only thin film layers are stacked on the flat substrate to distinguish the flat light emitting region. The bank pattern BANK is formed. Therefore, the light emitting area is determined by the bank pattern BANK.

The anode ANO is exposed by the bank pattern BANK. The organic layer EL and the cathode electrode layer CAT are sequentially stacked on the bank pattern BANK and the anode electrode ANO.

In the organic light emitting diode display having the above structure, the pixel area is determined to have a substantially rectangular shape surrounded by the scan line SL, the data line DL, and the driving current line VDD. The actual light emitting area in the pixel area is determined by the anode ANO exposed by the bank pattern BANK. As described above, the various wirings SL, DL, and VDD, the switching TFT (SWTFT), and the driving TFT (DRTFT) portions are non-light emitting regions. In such a structure, about 30% of the actual light emitting part is usually about the entire area. The results are quite inefficient relative to area.

In addition, the organic electroluminescent compound layer (EL) forming the OLED, which is a major component of the organic light emitting diode display, is easily deteriorated by moisture or oxygen. Therefore, the organic light emitting diode display has an encapsulation structure as shown in FIG. 4 is a cross-sectional view of an organic light emitting diode display having an encapsulation structure according to the related art.

An organic light emitting diode layer (OLEDL) including thin film transistors SWTFT and DRTFT and an organic layer EL is formed on the substrate SUB. The organic light emitting diode layer OLEDL is mainly formed at the center of the substrate SUB, and a pad portion PAD is formed at the periphery of the organic light emitting diode display to transmit and receive electrical signals from an external device for driving the organic light emitting diode display. The encapsulating glass substrate (ENCAP) is attached to the boundary portion of the pad portion PAD using an ultraviolet curable resin material to protect the organic light emitting diode layer (OLEDL) from moisture and oxygen penetration from the outside. do. In addition, since the UV sealing material SEAL alone cannot effectively prevent the penetration of moisture from the outside, an organic light emitting diode is attached to the center of the encapsulating glass substrate ENCAP to absorb moisture and oxygen that penetrates. Disposed on top of the layer (OLEDL).

The organic light emitting diode display having the encapsulation structure includes a sealing substrate ENCAP and a moisture absorbent GET, and a sealing process using a sealing material SEAL requires a high cost. In addition, since the portion in which the organic light emitting diode layer OLEDL is formed has an empty structure, the encapsulation substrate ENCAP may be bent in a horizontal state and may affect the display device in a large area display device.

SUMMARY OF THE INVENTION An object of the present invention is to provide an efficient organic light emitting diode display device and a method of manufacturing the same, which can utilize the entire pixel area as a light emitting area. Another object of the present invention is to provide an organic light emitting diode display device and a method of manufacturing the same, which do not require an encapsulation structure to protect the organic layer from external moisture penetration.

In order to achieve the above object, the organic light emitting diode display device according to the present invention comprises a substrate; An organic light emitting diode formed on the substrate; A buffer layer covering the organic light emitting diode; And a thin film transistor connected to the organic light emitting diode formed on the buffer layer.

A scan line formed on the buffer layer, a data line orthogonal to the scan line, and a driving current line parallel to the data line; The thin film transistor includes a gate electrode, a source electrode corresponding to a part of the driving current wiring, and a drain electrode facing the source electrode; The organic light emitting diode is characterized in that connected to the drain electrode.

The organic light emitting diode may include a first electrode formed on the substrate; An organic light emitting layer formed on the first electrode; And a second electrode formed on the organic light emitting layer; Any one of the first electrode and the second electrode is connected to the drain electrode.

The first electrode has a size corresponding to the pixel area; The organic light emitting layer may be connected to the drain electrode through a contact hole penetrating the organic light emitting layer, the second electrode, and the buffer layer.

The first electrode is formed on the entire surface of the substrate; The second electrode has a size corresponding to the pixel area and is connected to the drain electrode through a contact hole penetrating through the buffer layer.

The first electrode may include a transparent conductive material such as ITO and IZO.

A switching gate electrode branched from the scan line; A switching source electrode branched from the data line; And a switching thin film transistor facing the switching source electrode and including a switching drain electrode connected to the gate electrode of the thin film transistor.

In addition, the method of manufacturing an organic light emitting diode display according to the present invention includes forming an organic light emitting diode including a first electrode, an organic layer, and a second electrode on a substrate; Forming a buffer layer on the organic light emitting diode; Forming a thin film transistor for driving the organic light emitting diode on the buffer layer.

The forming of the organic light emitting diode may include depositing and patterning a conductive material on the substrate to form the first electrode to have a size corresponding to a pixel area; Forming a partition on a portion of the first electrode; And depositing an organic material and a conductive material lower than the height of the barrier rib to form the organic layer and the second electrode.

The forming of the organic light emitting diode may include forming a first electrode and an organic layer by continuously depositing a conductive material and an organic light emitting material on the entire surface of the substrate; And depositing a conductive material on the organic layer and patterning a second electrode having a size corresponding to the pixel area.

The organic light emitting diode display according to the present invention can convert the entire pixel area into a light emitting area as it is, and thus have brighter and clearer image quality, and can operate with less driving current, thereby reducing power consumption and improving reliability of the device. Increase the service life. In addition, the organic light emitting diode display according to the present invention has a structure in which the organic layer is completely protected since the organic layer is formed on the substrate and then the TFT is formed thereon. Therefore, there is no need for an encapsulation structure for additionally protecting the organic layer. As a result, since the organic layer is more effectively protected and does not require a special encapsulation structure, the manufacturing method is simple, and the manufacturing cost can be reduced, and the reliability of the device can be further improved.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. 5 is a plan view of an organic light emitting diode display according to an exemplary embodiment of the present invention. 6A through 6H are cross-sectional views taken along the line II ′ of FIG. 5, and illustrate cross-sectional views illustrating a method of manufacturing an organic light emitting diode display device according to example 1 of the present invention. 7A through 7E are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display device according to a second exemplary embodiment of the present invention, taken along the line II ′ of FIG. 5.

Referring to FIG. 5, a plurality of scan lines SL extending in the horizontal direction are arranged in the vertical direction. A plurality of data lines DL running in the vertical direction are arranged in the vertical direction. In addition, the driving current wirings VDD are arranged side by side adjacent to each data line DL. A substantially rectangular shape formed by the scan line SL, the data line DL, and the driving current line VDD surrounds the pixel area PA. In particular, in order to ensure the maximum pixel area, it is preferable to design the pixel area PA so that the wiring bordering the neighboring pixels can be shared by 1/2 of both pixels.

The switching TFT SWTFT is formed at the intersection of the scan line SL and the data line DL. The switching TFT (SWTFT) functions to select a pixel. The switching TFT SWT includes a gate electrode GSW branching from the scan line SL, a semiconductor layer ASW, a source electrode SSW, and a drain electrode DSW. The driving TFT (DRTFT) serves to drive the organic light emitting diode (OLED) of the pixel selected by the switching TFT (SWTFT). The driving TFT DRTFT includes a gate electrode GDR connected to the drain electrode DSW of the switching TFT SWT, a source electrode SDR connected to the semiconductor layer ADR, the driving current transmission line VDD, and a drain electrode. (DDR). The drain electrode DDR of the driving TFT DRTFT is connected to the anode ANO of the organic light emitting diode OLED.

In the organic light emitting diode display according to the present invention, the switching TFT (SWTFT) and the driving TFT (DRTFT) occupy almost all regions in the pixel area PA. This is a shape viewed from the upper surface of the substrate, the anode electrode, the organic layer and the cathode electrodes which determine the light emitting area are formed under the TFTs (SWTFT, DRTFT). Therefore, the design of the area ratio occupied by the TFTs in the pixel area PA is free. That is, in addition to the switching TFT (SWTFT) and the driving TFT (DRTFT), even if two to four additional compensation TFTs for TFT operation compensation are formed, they can be freely disposed in the pixel area PA.

6A to 6H, a method of manufacturing the organic light emitting diode display according to Example 1 will be described. A transparent conductive material such as ITO or IZO is deposited on the transparent substrate 101. The transparent conductive material is patterned with a first mask to form an anode ANO corresponding to the pixel area PA. (FIG. 6A)

The partition wall W is formed on the anode electrode ANO to form a contact hole to be connected to the drain electrode DDR of the driving TFT DRTFT. (FIG. 6B)

The organic layer EL and the cathode electrode CAT are successively deposited on the substrate 101 on which the partition wall W is formed. At this time, the organic layer EL and the cathode electrode CAT are formed lower than the height of the partition wall W. FIG. In addition, the organic layer EL is preferably a color organic layer when a color filter is not formed separately. When the organic layer EL is a white organic material, a color filter layer may be further formed under the organic layer. (FIG. 6C)

The bulkhead W is removed using a lift off method. Then, a buffer layer BUF is deposited on the entire substrate. The buffer layer BUF may be coated with an organic material such as resin to planarize the substrate surface. (FIG. 6D)

A metal material is deposited on the buffer layer BUF and patterned with a second mask to form a gate electrode GSW of the switching TFT SWT and a gate electrode GDR of the driving TFT DRTFT. The gate electrode GSW of the switching TFT SWTFT is branched at the scan line SL. (FIG. 6E)

The gate insulating layer GI is entirely deposited on the substrate 101 on which the gate electrodes GSW and GDR are formed. The semiconductor material is deposited on the gate insulating layer GI, and then patterned with a third mask to form the semiconductor layers ASW and ADR on each of the gate electrodes GSW and GDR. (Fig 6f)

The anode ANO is located at a position where the first contact hole CH1 exposing a part of the driving TFT DRTFT and the removed partition W are patterned by patterning the gate insulating layer GI and the buffer layer BUF with a fourth mask. A second contact hole CH2 exposing a portion is formed. In the first embodiment, a separate mask process is used to form the semiconductor pattern and the contact hole, but the semiconductor layers ASW and ADR and the contact holes CH1 and CH2 are simultaneously formed through a single mask process using a halftone mask. You may. (Fig. 6g)

A metal layer is deposited on the entire surface of the substrate, and patterned using a fifth mask to form opposing source electrodes SSW and SDR and drain electrodes DSW and DDR at predetermined intervals on the semiconductor layers ASW and ADR. The drain electrode DSW of the switching TFT SWTFT is connected to the gate electrode GDR of the driving TFT DRTFT through the first contact hole CH1 formed in the gate insulating layer GI. The drain electrode DDR of the driving TFT DRTFT is connected to the anode electrode ANO at the bottom layer through the second contact hole CH2. The source electrode SSW of the switching TFT SWT branches off from the data line DL, and the source electrode SDR of the driving TFT DRTFT is formed as part of the driving current wiring VDD. If necessary, a protective layer PASI may be further formed on the entire surface of the substrate to protect the thin film transistors SWTFT and DRTFT. (Figure 6h)

Hereinafter, a method of manufacturing the organic light emitting diode display according to Example 2 will be described with reference to FIGS. 7A to 7E.

On the transparent substrate 101, a transparent conductor such as ITO or IZO is deposited on the entire surface to form a cathode layer CAT. Then, the organic light emitting material is deposited on the entire surface to form the organic layer EL. The metal material is entirely deposited on the organic layer EL. The cathode layer CAT, the organic layer EL, and the metal material may be continuously deposited. Then, the metal material is patterned with the first mask to form an anode ANO corresponding to the size of the pixel region. (FIG. 7A)

A buffer layer BUF is deposited on the entire surface of the substrate 101 on which the anode electrode ANO is formed. The buffer layer BUF may be coated with an organic material such as resin to planarize the substrate surface. A metal material is deposited on the buffer layer BUF and patterned with a second mask to form a gate electrode GSW of the switching TFT SWT and a gate electrode GDR of the driving TFT DRTFT. The gate electrode GSW of the switching TFT SWTFT is branched at the scan line SL. (FIG. 7B)

The gate insulating layer GI is entirely coated on the gate electrodes GSW and GDR. The semiconductor material is deposited on the gate insulating layer GI and patterned with a third mask to form the semiconductor layers ASW and ADR on each of the gate electrodes GSW and GDR. (FIG. 7C)

The gate insulating layer GI and the buffer layer BUF are patterned using a fourth mask, and the first contact hole CH1 exposing a part of the driving TFT DRTFT and the second contact hole CH2 exposing a part of the anode electrode ANO. ). In the second embodiment, a separate mask process is used to form the semiconductor pattern and the contact hole, but the semiconductor layers ASW and ADR and the contact holes CH1 and CH2 are simultaneously formed through a single mask process using a halftone mask. You may. (FIG. 7D)

A metal layer is deposited on the entire surface of the substrate, and patterned using a fifth mask to form opposing source electrodes SSW and SDR and drain electrodes DSW and DDR at predetermined intervals on the semiconductor layers ASW and ADR. The drain electrode DSW of the switching TFT SWTFT is connected to the gate electrode GDR of the driving TFT DRTFT through the first contact hole CH1 formed in the gate insulating layer GI. The drain electrode DDR of the driving TFT DRTFT is connected to the anode ANO through the second contact hole CH2. The source electrode SSW of the switching TFT SWT branches off from the data line DL, and the source electrode SDR of the driving TFT DRTFT is formed as part of the driving current wiring VDD. If necessary, a protective layer PASI may be further formed on the entire surface of the substrate to protect the thin film transistors SWTFT and DRTFT. (FIG. 7E)

According to the first and second exemplary embodiments, the organic light emitting diode display device may be manufactured through the masking process of Nos. 4 to 5. In the organic light emitting diode display having the structure as shown in FIGS. 6H and 7E, the emission region is determined by the size of the anode electrode ANO. In addition, since the anode ANO is formed to substantially match the size of the pixel region, the light emitting region and the pixel region have almost the same size. In addition, since the organic light emitting diode is first formed on the smooth substrate without forming the organic light emitting diode after the TFT is manufactured, a bank pattern is not necessary. That is, it is possible to ensure the opening ratio of the maximum ratio which is not affected by the thin film transistors SWTFT and DRTFT and the various wirings DL, SL, and VDD.

In addition, since the organic light emitting diode is first formed on the substrate and the bottom light emitting method is used, the light emitting area having the area ratio almost equal to the size of the pixel area can be obtained. In addition, since the thin film transistor is formed on the organic light emitting diode instead of the light emitting direction, the degree of freedom in determining the placement position and size of the thin film transistor is very high. In addition, an auxiliary thin film transistor may be further formed to prevent the switching voltage of the thin film transistors from being shifted.

In the embodiments of the present invention, the bottom emission method has been described in order to secure the maximum aperture ratio. Thus, a transparent electrode was formed on the glass substrate, and an opaque electrode was used on the organic layer. The transparent electrode may be an anode electrode of the organic light emitting diode or may be a cathode electrode. In Example 1, the transparent electrode was applied to the anode ANO, and in Example 2, the transparent electrode was applied to the cathode electrode CAT. In addition, the structure of the drain electrode of the driving TFT DRTFT is connected to the anode ANO. The circuit configuration of the organic light emitting diode display according to the present invention can be implemented as shown in FIGS. 8A and 8B. 8A to 8B are equivalent circuit diagrams illustrating a structure of an organic light emitting diode display according to the present invention. However, since these are the most preferred embodiments, it is possible to apply the changed structure as necessary.

Those skilled in the art will appreciate that various changes and modifications can be made without departing from the technical spirit of the present invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification but should be defined by the claims.

1 is a view showing the structure of an organic light emitting diode.

FIG. 2 is a plan view illustrating a structure of one pixel in the organic light emitting diode of FIG. 1. FIG.

FIG. 3 is a cross-sectional view illustrating a structure of an organic light emitting diode cut along a cutting line A-A 'in FIG. 3. FIG.

4 is a cross-sectional view of an organic light emitting diode display having an encapsulation structure according to the prior art.

5 is a plan view showing an organic light emitting diode display according to the present invention.

6A through 6H are cross-sectional views taken along the line II ′ of FIG. 5, and are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display device according to example 1 of the present invention.

7A to 7E are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display device according to a second embodiment of the present invention, taken along the line II ′ of FIG. 5.

8A to 8B are equivalent circuit diagrams showing the structure of an organic light emitting diode display according to the present invention.

<Description of the symbols for the main parts of the drawings>

HIL: Hole injection layer HTL: Hole transport layer

EML: Emission Layer ETL: Electron Transport Layer

EIL: Electron injection layer BANK: Bank pattern

OLED: organic light emitting diode layer PAD: pad part

SUB: Substrate SEAL: Real

ENCAP: Encapsulating glass substrate GET: Hygroscopic material

DL: data line SL: scan line

SWTFT: Switching TFT DRTFT: Driving TFT

OLED: organic light emitting diode VDD: drive current wiring

CAT: cathode electrode ANO: anode electrode

EL: organic layer

GSW, GDR: gate electrode SSW, SDR: source electrode

DSW, DDR: Drain electrode ASW, ADR: Semiconductor layer

GI: gate insulating film PASI: protective film

BANK: Bank Pattern BUF: Buffer Metal Layer

101: transparent substrate W: partition wall

CH1: first contact hole CH2: second contact hole

Claims (15)

A substrate; An organic light emitting diode formed on the substrate; A buffer layer covering the organic light emitting diode; And And a thin film transistor connected to the organic light emitting diode formed on the buffer layer. The method of claim 1, A scan line formed on the buffer layer, a data line orthogonal to the scan line, and a driving current line parallel to the data line; The thin film transistor includes a gate electrode, a source electrode corresponding to a part of the driving current wiring, and a drain electrode facing the source electrode; The organic light emitting diode display device of claim 1, wherein the organic light emitting diode is connected to the drain electrode. The method of claim 2, The organic light emitting diode, A first electrode formed on the substrate; An organic light emitting layer formed on the first electrode; And A second electrode formed on the organic light emitting layer; And one of the first electrode and the second electrode is connected to the drain electrode. The method of claim 3, wherein The first electrode has a size corresponding to the pixel area; The organic light emitting diode display device of claim 1, wherein the organic light emitting diode is connected to the drain electrode through a contact hole passing through the organic light emitting layer, the second electrode, and the buffer layer. The method of claim 3, wherein The first electrode is formed on the entire surface of the substrate; And the second electrode has a size corresponding to a pixel area and is connected to the drain electrode through a contact hole penetrating through the buffer layer. The method of claim 3, wherein And the first electrode includes a transparent conductive material such as ITO and IZO. The method of claim 2, A switching gate electrode branched from the scan line; A switching source electrode branched from the data line; And a switching thin film transistor facing the switching source electrode, the switching thin film transistor including a switching drain electrode connected to the gate electrode of the thin film transistor. Forming an organic light emitting diode comprising a first electrode, an organic layer, and a second electrode on the substrate; Forming a buffer layer on the organic light emitting diode; Forming a thin film transistor for driving the organic light emitting diode on the buffer layer. The method of claim 8, Forming the organic light emitting diode, Depositing and patterning a conductive material on the substrate to form the first electrode to have a size corresponding to a pixel area; Forming a partition on a portion of the first electrode; And depositing an organic material and a conductive material below the height of the barrier rib to form the organic layer and the second electrode. The method of claim 9, Forming the buffer layer after the removal of the partition wall; Forming the thin film transistor, Forming a gate electrode on the buffer layer; Forming a gate insulating film covering the gate electrode; Forming a semiconductor layer on the gate insulating layer, the semiconductor layer overlapping the gate electrode; Patterning the gate insulating film to form a contact hole exposing the first electrode at a position of the removed partition wall; Forming a source electrode on one side of the semiconductor layer and a drain electrode facing the source electrode on the other side of the semiconductor layer and in contact with the first electrode through the contact hole; Method of manufacturing a light emitting diode display device. 11. The method of claim 10, The forming of the gate electrode may further include forming a scan line and a switching gate electrode branching from the scan line; The forming of the semiconductor layer may further include forming a switching semiconductor layer on the gate insulating layer, the switching semiconductor layer overlapping the switching gate electrode; The forming of the contact hole may further include forming a gate contact hole by patterning the gate insulating layer to expose a portion of the gate electrode; The forming of the source-drain electrode may include a switching source electrode on one side of the switching semiconductor layer and an opposite side of the switching source electrode on the other side of the switching semiconductor layer, and the gate electrode through the gate contact hole. A method of manufacturing an organic light emitting diode display, further comprising forming a switching drain electrode in contact. The method of claim 8, Forming the organic light emitting diode, Continuously depositing a conductive material and an organic light emitting material on the entire surface of the substrate to form the first electrode and the organic layer; And depositing a conductive material on the organic layer and patterning to form a second electrode having a size corresponding to the pixel area. 13. The method of claim 12, The forming of the buffer layer may include forming a contact hole exposing a portion of the second electrode by patterning the buffer layer after applying the buffer layer; Forming the thin film transistor, Forming a gate electrode on the buffer layer; Forming a gate insulating film covering the gate electrode; Forming a semiconductor layer on the gate insulating layer, the semiconductor layer overlapping the gate electrode; Patterning the gate insulating layer and the buffer layer to form a contact hole exposing a portion of the second electrode; Forming a source electrode on one side of the semiconductor layer and a drain electrode facing the source electrode on the other side of the semiconductor layer and in contact with the second electrode through the contact hole; Method of manufacturing a light emitting diode display device. The method of claim 13, The forming of the gate electrode may further include forming a scan line and a switching gate electrode branching from the scan line; The forming of the semiconductor layer may further include forming a switching semiconductor layer on the gate insulating layer, the switching semiconductor layer overlapping the switching gate electrode; The forming of the contact hole may further include forming a gate contact hole by patterning the gate insulating layer to expose a portion of the gate electrode; The forming of the source-drain electrode may include a switching source electrode on one side of the switching semiconductor layer and an opposite side of the switching source electrode on the other side of the switching semiconductor layer, and the gate electrode through the gate contact hole. A method of manufacturing an organic light emitting diode display, further comprising forming a switching drain electrode in contact. The method of claim 8, The first electrode includes a transparent conductive material such as ITO and IZO.

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