KR20150033141A - Organic Light Emitting Diode Device And Method Of Fabricating The Same - Google Patents

Abstract

The organic light emitting diode device of the present invention includes a second electrode of a double structure which consists of a lower layer that is a metal layer functioning as a cathode, and an upper layer that is made of a transparent conductive material that connects an auxiliary line and the lower layer, wherein the second electrode and the auxiliary line are connected to lower the resistance of the second electrode. Also, a short circuit is generated by the contact of a first electrode with a second electrode due to the generation of foreign substance. A dark point due to the generation of the short circuit causes the deterioration of image quality. The contact of the first electrode and the second electrode can be prevented by forming an organic light emitting layer (112) by a printing type inkjet or nozzle coating method.

Description

[0001] The present invention relates to an organic light emitting diode (OLED)

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting diode (OLED) element, and more particularly, to an organic light emitting diode (OLED) element and a method of manufacturing the same.

2. Description of the Related Art [0002] As an information-oriented society develops, demands for a display device for displaying an image have increased in various forms. Recently, a liquid crystal display (LCD), a plasma display panel (PDP) Various flat display devices such as an organic light emitting diode (OLED) device have been utilized.

The organic light emitting diode device injects electrons and holes into the light emitting layer from an electron injection cathode and an anode and injects electrons and holes into the light emitting layer, and emits light when an exciton coupled with a hole falls from an excited state to a ground state.

Because of this principle, unlike a conventional liquid crystal display (LCD), there is no need for a separate light source, so that the volume and weight of the device can be reduced.

In addition, since the organic light emitting diode device has a high luminance and a low operating voltage characteristic and is a self-luminous type that emits light by itself, it has a large contrast ratio, can realize an ultra-thin display, Mu s), has no limitation of viewing angles, is stable at low temperatures, and is driven at a low voltage of 5 to 15 V DC, making it easy to manufacture and design a driving circuit, and has recently attracted attention as a flat panel display device.

The driving method of such an organic light emitting diode device can be divided into a passive matrix type and an active matrix type.

The passive matrix type organic light emitting diode device has a simple structure and a simple manufacturing method. However, the passive matrix organic light emitting diode device has a problem in that it has difficulty in increasing the power consumption and size of the display device, and the aperture ratio is lowered as the number of wirings is increased.

On the other hand, the active matrix type organic light emitting diode device has an advantage of providing high luminous efficiency and high image quality.

The basic structure and operational characteristics of such an active matrix type organic light emitting diode device will be described in detail with reference to the accompanying drawings.

1 is a circuit diagram showing a unit pixel of a general organic light emitting diode device.

As shown in the figure, a unit pixel of a conventional organic light emitting diode device includes a data line DL defining a pixel region P and a data line DL crossing a gate line GL formed in one direction and a gate line GL, And a power supply line PL for applying a power supply voltage are formed separately from the wiring DL.

A switching transistor Ts, a driving transistor Td, an organic light emitting diode E and a storage capacitor Cst are formed in the pixel region P. [

The switching transistor Ts is connected to the corresponding gate wiring and data lines GL and DL. The driving transistor Td is connected to the switching transistor Ts. The gate electrode of the driving transistor Td is connected to the drain electrode of the switching transistor Ts.

The organic light emitting diode E is connected to the driving transistor Td. For example, the first electrode (e.g., anode) of the organic light emitting diode E is connected to the drain electrode of the driving transistor Td, and the second electrode of the organic light emitting diode E For example, the cathode, is supplied with the ground voltage VSS.

At this time, the driving transistor Td is connected between the power supply line PL and the organic light emitting diode E. Meanwhile, an organic light emitting layer including an organic light emitting material that emits light is formed between the first and second electrodes of the organic light emitting diode (E).

The storage capacitor Cst is connected between the gate electrode and the source electrode of the corresponding driving transistor Td.

Therefore, when a signal is applied through the gate line GL, the switching transistor Ts is turned on and the signal of the data line DL is transmitted to the gate electrode of the driving transistor Td, (Td), and the light is output by the electric field-major pair of the organic light emitting diode (E) connected thereto. At this time, when the driving transistor Td is turned on, the level of the electric current flowing from the power supply line PL to the organic light emitting diode E is determined. As a result, the organic light emitting diode E is gray- scale can be implemented.

The storage capacitor Cst serves to keep the gate voltage of the driving transistor Td constant when the switching transistor Ts is turned off so that the switching transistor Ts is turned off, The level of the current flowing through the organic light emitting diode E can be kept constant until the next frame.

In general, such an organic light emitting diode device forms an organic light emitting diode including an array element such as a thin film transistor, first and second electrodes and an organic light emitting layer on one substrate.

2 is a cross-sectional view of a conventional pixel region of an organic light emitting diode device.

The organic light emitting diode device 1 is divided into a first substrate 2 having an organic light emitting diode 11 and a second substrate 15 facing the first substrate 2.

A semiconductor layer 3 is formed on the first substrate 2. The semiconductor layer 3 includes an active region 3a constituting a channel region and source and drain regions 3b and 3c on both sides of the active region 3a. .

A gate insulating film 4 is formed on the semiconductor layer 3.

A gate electrode 5 is formed on the gate insulating film 4 in correspondence with the active region 3a of the semiconductor layer 3.

An interlayer insulating film 9 is formed on the gate electrode 5 and a gate insulating film 4 under the interlayer insulating film 9 is formed on the source and drain regions 3b and 3c And source and drain electrodes 7a and 7b connected to the source and drain regions 3b and 3c through the contact hole are formed.

Then, the planarization film 10 is formed while exposing the drain electrode 7b.

At this time, the semiconductor layer 3 including the source and drain electrodes 7a and 7b and the source and drain regions 3b and 3c connected to the electrodes and the gate insulating film 4 and the gate electrode 5 Thereby forming the driving transistor DTr.

A first electrode connected to the drain electrode 7b of the driving transistor DTr and serving as an anode of the organic light emitting diode 11 is formed in a region for displaying an image on the planarization layer 10, (11a) is formed.

The first electrode 11a is formed for each pixel region P and a bank 13 is located at the edge of the first electrode 11a formed for each pixel region P. [

An organic light emitting layer 11b is formed on the first electrode 11a and a second electrode 11c is formed on the organic light emitting layer 11b.

A protection layer 15 is provided on the second electrode 11c and is encapsulated through the second substrate 15 on the protection layer 15.

Meanwhile, in the process of forming the organic light emitting diode 11, the foreign object 23 is generated. The foreign object 23 causes a short between the first and second electrodes 11a and 11b.

In other words, after the first electrode 11a is formed, the foreign matter 23 is generated, and the organic light-emitting layer 11b is not formed around the foreign matter 23 by the foreign matter 23.

The second electrode 11c formed on the organic light emitting layer 11b is formed by digging into the portion where the organic light emitting layer 11b is not formed around the foreign substance 23 and finally the second electrode 11c is formed on the first electrode 11c, A short occurs due to the contact with the surface of the pixel area 11a, and a dark spot is generated in the pixel area P where the shot has occurred, which causes the image quality to deteriorate or the yield to be lowered due to the dark spot.

The first object of the present invention is to prevent short-circuiting between the first electrode and the second electrode of the organic light-emitting layer by foreign matter, thereby improving image quality and yield.

A second object of the present invention is to provide an organic light emitting diode device for realizing low resistance of the second electrode.

According to an aspect of the present invention, there is provided a method of fabricating an organic light emitting diode device, including: forming a barrier rib on a boundary of a display region of a substrate on which a display region is defined; Forming a first electrode on the substrate on which the barrier rib is formed; Forming an auxiliary electrode covering the barrier rib and a first electrode spaced apart from the auxiliary electrode in the display region; Forming a bank between the auxiliary electrode and the first electrode to surround the display region; Exposing the auxiliary electrode formed on a side surface of the barrier rib and forming an organic light emitting layer covering the first electrode; And forming a second electrode covering the organic light emitting layer and contacting the exposed auxiliary electrode.

And the partition wall has an inverted taper shape.

Wherein forming the auxiliary electrode and the first electrode comprises: Forming a first metal layer on the first substrate by selecting one of aluminum, silver, molybdenum, molybdenum alloy, titanium, titanium alloy, chromium, and chromium alloy; Depositing indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) on the first metal layer to form a second metal layer; And patterning the first and second metal layers to form the auxiliary electrode and the first electrode, wherein the second metal layer completely covers the barrier ribs.

The lower layer of the first electrode serves as a reflection plate, and the upper layer of the first electrode serves as an anode.

The forming of the organic light emitting layer is characterized in that a liquid type organic light emitting material is formed by an ink jet or nozzle coating process.

The forming of the organic light emitting layer may include forming an electron injection layer by the ink jet or nozzle coating process; Emitting layer, an electron-transporting layer, and an electron-injecting layer are formed on the electron-injecting layer using either a shadow mask or a laser process.

The forming of the second electrode may include forming a third metal layer by depositing one or more of aluminum, aluminum alloy, silver, magnesium, gold, and aluminum magnesium alloy on the organic light emitting layer. Depositing indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) on the third metal layer to form a fourth metal layer.

The fourth metal layer is formed to completely cover the barrier ribs and is connected to the auxiliary electrode.

An organic light emitting diode device according to the present invention includes: a substrate having a display region defined therein; A first electrode formed on the display region of the substrate on which the barrier rib is formed; An auxiliary electrode covering the barrier rib and spaced apart from the first electrode; An organic light emitting layer formed on the side surface of the barrier rib to expose the auxiliary electrode and cover the first electrode; And a second electrode covering the organic light emitting layer and contacting the exposed auxiliary electrode.

And the partition wall has an inverted taper shape.

The auxiliary electrode and the first electrode are each formed of a first metal layer and a second metal layer on the first metal layer. The first metal layer may include at least one of aluminum, silver, molybdenum, molybdenum alloy, titanium, titanium alloy, chromium, Wherein the second metal layer is formed of any one of indium-tin-oxide (ITO) and indium-zinc-oxide (IZO), and the second metal layer of the auxiliary electrode completely covers the barrier rib .

Wherein the second electrode comprises a third metal layer and a fourth metal layer over the third metal layer, wherein the third metal layer is formed of one or more of aluminum, an aluminum alloy, silver, magnesium, gold, and an aluminum magnesium alloy And the fourth metal layer is formed of any one of indium-tin-oxide (ITO) and indium-zinc-oxide (IZO).

The fourth metal layer is formed to completely cover the barrier ribs, and is connected to the auxiliary electrode at the side of the barrier rib.

As described above, the organic light emitting diode device according to the present invention forms an organic light emitting layer using a printing type inkjet or nozzle coating, and solves the problem that an organic light emitting layer is not formed on the side of a foreign object due to foreign matter. It is possible to prevent a short circuit between the first electrode and the second electrode.

Therefore, the dark spot state is prevented, and the image quality is improved.

Furthermore, the auxiliary wiring is formed without additional process to reduce the number of process steps, and the auxiliary electrode and the second electrode are connected to each other, thereby lowering the resistance of the second electrode.

Therefore, the power consumption of the organic light emitting diode is reduced due to the decrease of the resistance of the second electrode.

1 is a circuit diagram of a pixel of a general organic light emitting diode device.
2 is a cross-sectional view of a conventional pixel region of an organic light emitting diode device.
3 is a cross-sectional view of one pixel region of an organic light emitting diode device according to an embodiment of the present invention.
4A to 4F are cross-sectional views illustrating an organic light emitting diode according to an exemplary embodiment of the present invention.

Hereinafter, an organic light emitting diode device according to the present invention will be described with reference to the accompanying drawings.

3 is a cross-sectional view illustrating an organic light emitting diode device according to the present invention.

As shown in the figure, the organic light emitting diode device 100 encapsulates the first substrate 102, on which the driving thin film transistor DTr and the organic light emitting diode 114 are formed, with the second substrate 130.

A semiconductor layer 103 is formed on the pixel region P on the first substrate 102. The semiconductor layer 103 is made of silicon and has a central portion including an active region 103a and active regions 103a, Source and drain regions 103b and 103c doped with a high concentration of impurities are formed on both sides of the region 103a.

A gate insulating layer 104 is formed on the semiconductor layer 103.

Gate electrodes 105 corresponding to the active regions 103a of the semiconductor layer 103 and gate wirings (not shown) extending in one direction are formed on the gate insulating film 104, though they are not shown in the figure.

An interlayer insulating film 109 is formed on the entire upper surface of the gate electrode 105 and the gate wiring (not shown).

The interlayer insulating film 109 and the gate insulating film 104 under the contact hole 107c expose the source and drain regions 103b and 103c located on both sides of the active region 103a.

Source and drain electrodes 107a and 107b which are in contact with the source and drain regions 103b and 103c which are spaced apart from each other and exposed through the contact hole 107c are formed on the interlayer insulating film 109 including the contact hole 107c Respectively.

A planarization film 110 having a drain contact hole 107d exposing the drain electrode 107b is formed on the interlayer insulating film 109 exposed between the source and drain electrodes 107a and 107b.

At this time, the semiconductor layer 103 including the source and drain electrodes 107a and 107b and the source and drain regions 103b and 103c connected to the electrodes and the gate insulating film 104 formed on the semiconductor layer 103, And the gate electrode 105 constitute a driving thin film transistor DTr.

Although not shown, a data line (not shown) is formed which crosses the gate line (not shown) and defines the pixel region P. The switching thin film transistor (not shown) has the same structure as the driving thin film transistor DTr and is connected to the driving thin film transistor DTr.

A barrier rib 117 is formed in the non-emission region on the planarization film 110. At this time, the barrier rib 117 is formed in an inverted tapered shape by applying a photosensitive organic insulating material, in particular, a photosensitive organic insulating material of a negative type, and performing an exposure and development process using the exposure mask and patterning.

Subsequently, a first electrode 111 connected to the drain electrode 107b of the driving thin film transistor DTr is formed in each pixel region P in a pixel region P substantially displaying an image.

Here, the first electrode 111 may have a bilayer structure, the upper layer 111b may function as an anode electrode, the lower layer 111a may function as a reflector, and the lower layer 1111a may be omitted.

That is, the upper layer 111b of the first electrode 111 may be formed of a transparent conductive material having a relatively large work function value, for example, indium-tin-oxide (ITO) or indium-zinc- And the lower layer 111a of the first electrode 111 may be formed of one selected from the group consisting of Al, Ag, Mo, Mo alloy, Ti, Ti alloy, , Cr (Cr), and Cr alloy. The light emitted from the organic light emitting layer (112) formed on the first electrode (111) is reflected upward to be recycled, .

In this case, the lower layer 111a is not formed continuously due to the nature of the metallic material due to the reverse tapered shape of the barrier rib 117, and the upper layer 111b is formed of the barrier rib 117, (117). That is, the upper layer 111b completely covers the barrier ribs 117, and auxiliary electrodes 119 are formed around the barrier ribs 117.

A bank (bank) 115 is formed between the first electrodes 111 formed for each pixel region P. The bank 115 is formed as a boundary portion (non-light emitting region) for each pixel region P, and the first electrode 111 is formed in a structure separated by the pixel region P.

In addition, the bank 115 is formed with a predetermined width apart from the side surface of the partition 117 formed in the non-light emitting area.

The auxiliary electrode 119 between the bank 115 and the barrier rib 117 and the first electrode 111 formed in the pixel region P are electrically separated.

An organic light emitting layer 112 is formed on the first substrate 102 including the banks 115, the barrier ribs 117, the first electrode 111, and the auxiliary electrode 119.

Here, the organic light emitting layer 112 may be a single layer made of a light emitting material. In order to increase the light emitting efficiency, a hole injection layer, a hole transport layer, an emitting material layer, A hole transport layer, an electron transport layer, and an electron injection layer.

The organic light emitting layer 112 may be red, green, blue or white, red, green, and blue. In general, the organic light emitting layer 112 may emit white light, red light, Materials are used in patterns.

When the foreign substance 123 is positioned on the first electrode 111 in the pixel region P before or during the process of forming the organic light emitting layer 112, the organic light emitting layer 112 is formed to surround the lower side surface of the foreign object 123. The organic light emitting layer 112 is formed by a printing type inkjet or nozzle coating.

That is, since the organic light emitting layer 112 is formed by ink jet or nozzle coating, the organic light emitting layer 112 is spread evenly to the side surface of the foreign object 123 by the ink viscosity of the organic material until the organic material is coated. Therefore, the first electrode 111 is prevented from being exposed due to the defective deposition by the foreign substance 123.

A second electrode 113 is formed on the entire surface of the display region above the organic light emitting layer 112. The second electrode 113 has a bilayer structure, and the upper layer 113b is connected to the auxiliary wiring 119 and the lower layer 113a is formed to serve as a cathode.

That is, the lower layer 113a of the second electrode 113 is formed of a metal material having a relatively low work function value such as aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg) And an aluminum magnesium alloy (AlMg), and the upper layer 113b of the second electrode 113 is made of a transparent conductive material such as indium-tin-oxide (ITO) or indium-zinc- (IZO) to form the second electrode 113.

In this case, the lower layer 113a of the second electrode 113 is formed not to be continuous between the barrier rib 117 and the foreign material 123 due to the nature of the metal material, and the upper layer 113b of the second electrode 113 is formed of a transparent conductive material As shown in FIG.

On the other hand, the second electrode 113 is formed in a double-layer structure rather than a single-layer structure, so that the second electrode 113 is formed in a very thin film shape so as to be in a transparent state, Because of its inherent very high self-resistance in the case of very thin films, it is necessary to contact the auxiliary electrode 119 to reduce its own resistance.

If the second electrode 113 is formed as a single layer, it is preferable that the material of the aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg), gold (Au), aluminum magnesium alloy The auxiliary electrode 119 may not be formed along the side surface of the barrier rib 117 and may not contact the auxiliary electrode 119.

Therefore, the present invention includes an upper layer 113b for connecting the lower layer 113a and the auxiliary wiring 119 with the second electrode 113 as a double layer structure, and the upper layer 113a is formed continuously And contact with the auxiliary wiring 119 formed along the side surface of the barrier rib 119 causes the resistance of the second electrode 113 to decrease.

A protective layer 120 is provided on the second electrode 113 and is encapsulated through the second substrate 130.

In the organic light emitting diode device 100 of the present invention, the second electrode is formed as a double layer structure, the lower layer is formed of a metal layer serving as a cathode, and the upper layer is formed of a transparent conductive material connecting the auxiliary wiring and the lower layer. So that the resistance of the second electrode can be lowered. In addition, the problem that the first electrode and the second electrode come into contact with each other due to the foreign matter short-circuiting can be prevented by forming the organic luminescent layer 112 by inkjet or nozzle coating of a printing type.

Hereinafter, a method of manufacturing the organic light emitting diode device of the present invention having the above-described structure will be described. At this time, a characteristic portion of the present invention is present in the organic light emitting diode 114, and a manufacturing method thereof will be described.

4A to 4F are cross-sectional views illustrating an organic light emitting diode according to an exemplary embodiment of the present invention. In this case, the pixel region includes a portion where foreign substances are deposited on the first electrode before forming the organic light emitting layer.

As shown in Fig. 4A, a driving transistor (DTr in Fig. 3) is formed on the first substrate 102, and a floating gate 110 is formed on an upper portion of the substrate on which the planarization film 110 is formed, A photosensitive organic insulating material, particularly a negative type photosensitive organic insulating material having characteristics to be left in the development upon receiving light, is applied and patterned by performing an exposure and development process using an exposure mask to form a partition 117 do.

At this time, the photosensitive organic insulating material having negative characteristics is exposed and developed using an exposure mask, so that the cross-sectional structure thereof has an inverted taper shape as shown in the figure. The portion of the organic insulating material layer that is exposed to the light due to the negative characteristics is left in the developing state and the light has a relatively large amount of time in the surface of the organic insulating material layer and relatively light due to its transmittance or the like Less. Accordingly, the light is most likely to react with the light on the surface where the light starts to enter, and the light amount is relatively small in the portion adjacent to the substrate, so that the partition 117 having an inverted tapered cross- .

Next, as shown in FIG. 4B, aluminum (Al), silver (Ag), molybdenum (Mo), molybdenum alloy (Mo alloy), titanium (Ti) A first metal layer (not shown) is formed by selecting one of a titanium alloy, a chromium (Cr) alloy, and a chromium alloy (Cr alloy).

A second metal layer (not shown) is formed by depositing a transparent conductive material having a relatively large work function value such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) on the first metal layer .

At this time, the first metal layer (not shown) is not deposited on the side of the barrier rib 117 due to the nature of the material by the reverse tapered barrier rib 117, and is deposited on the top of the planarization layer 110 and the barrier rib 117 . On the other hand, the second metal layer (not shown) covers the barrier ribs 117 due to the characteristics of the material and is deposited on the entire surface of the planarization layer 110.

Next, the first and second metal layers are patterned to form a first electrode 111 composed of a lower layer 111a and an upper layer 111b in each pixel region P, and an auxiliary electrode 119 ).

Between the first electrode 111 and the auxiliary electrode 119, a bank region 115a in which the planarization layer 110 is exposed is defined. That is, the bank region 115a corresponds to the space between the pixel region P and the boundary portion (non-light emitting region) by the pixel region P.

The first and second metal layers 111a and 111b of the pixel region P and the first and second metal layers 111a and 111b on both sides of the bank region 115a and the barrier rib 117 are electrically connected to each other through the bank region 115a, 111b are not electrically connected.

Next, as shown in FIG. 4C, a bank (not shown) is formed by using any one of transparent organic insulating materials such as polyimide, photo acryl, and benzocyclobutene (BCB) in the bank region 115a 115). Alternatively, the bank 115 may be formed of a material that exhibits black, for example, a black resin.

If the barrier rib 117 is to be formed in the process of forming the bank 115, the auxiliary electrode 119 may be formed on the barrier rib 117, The auxiliary electrode 119 is completely covered by the organic light emitting layer 112 and can not be used as the auxiliary electrode 119 because the partition 117 is formed in the formed state.

Next, as shown in FIG. 4D, a liquid type organic light emitting material is coated on the planarization layer 110 having the first electrode 111, the auxiliary electrode 119, and the barrier ribs 117 by inkjet or nozzle coating An organic light emitting layer 112 is formed.

At this time, the organic light emitting layer 112 can be formed so as to emit red, green, and blue light sequentially repeating for each pixel region P by differentiating the material. Further, a white color may be added so as to emit light. Although not shown in the figure, the organic light emitting layer 112 may include a hole injection layer, a hole transport layer, an emission material layer, an electron transport layer, And an electron injection layer may be formed.

When the foreign substance 123 is positioned on the first electrode 111 in the pixel region P before or during the process of forming the organic light emitting layer 112, the organic light emitting layer 112 is formed to surround the lower side surface of the foreign object 123. The organic light emitting layer 112 is formed by a printing type inkjet or nozzle coating.

That is, since the organic light emitting layer 112 is formed by ink jet or nozzle coating, the organic light emitting layer 112 is spread evenly to the side surface of the foreign object 123 by the ink viscosity of the organic material until the organic material is coated.

However, when the organic light emitting layer 112 is composed of multiple layers, forming all the layers by printing inkjet or nozzle coating may increase the cost of the process. Therefore, only the hole injection layer A hole transporting layer, an emitting material layer, an electron transporting layer, and an electron transporting layer are formed on the lower surface of the foreign material 123 by a printing method ink jet or nozzle coating. An electron injection layer may be formed by a shadow mask method, for example, a fine metal mask (FMM) or a laser transfer method, thereby suppressing an increase in process cost.

4E, the organic light emitting layer 112 is formed of a metal material having a relatively low work function, such as aluminum (Al), an aluminum alloy (AlNd), silver (Ag), magnesium (Mg) The second electrode 113 separated by the reverse tapered partition 117 automatically for each pixel region P by depositing any one or more of gold (Au), aluminum magnesium alloy (AlMg) (113a).

Next, as shown in FIG. 4F, a transparent conductive material such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) having a relatively large work function value is deposited on the lower layer 113a, Thereby forming an upper layer 113b of the lower electrode 113.

As a result, the auxiliary electrode 119 formed on the side surface of the barrier rib 117 and the upper layer 113b of the second electrode 113 are electrically connected to each other to increase the area of the second electrode 113, The resistance of aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg), gold (Au) and aluminum magnesium alloy (AlMg)

The lower layer 113b of the second electrode 113 which is not continuous by the foreign substance 123 and the barrier rib 117 is electrically connected by the upper layer 113a.

Referring to FIG. 3, the organic light emitting diode device fabricated as described above is fabricated by a general manufacturing method, that is, an active region 103a and a semiconductor layer (not shown) of the source and drain regions 103b and 103c on a transparent insulating substrate 102 (Not shown) and a gate electrode 105 are formed on the gate insulating film 104. The step of forming the gate insulating film 104 includes forming a gate insulating film 104, Forming a gate electrode 105 and a gate wiring (not shown) corresponding to the region 103a; forming an interlayer insulating film 109 on the entire upper surface of the gate electrode 105 and gate wiring (not shown) Exposing the source and drain regions 103b and 103c of the layer 103 to form the contact hole 107c and forming the source and drain electrodes 107a and 107b on the interlayer insulating film 109 including the contact hole 107c, The thin film transistors 107a and 107b serving as driving and switching elements The planarization film 110 having the drain contact hole 107d for exposing the drain electrode 107b is formed on the planarization film 110 and the organic light emitting diode is formed on the planarization film 110, The device can be completed.

110: planarization film 111: first electrode
111a: lower layer of the first electrode 111b: upper layer of the first electrode
112: organic light emitting layer 113: second electrode
113a: lower layer of the second electrode 113b: upper layer of the second electrode
114: organic light emitting diode 115: bank
117: barrier rib 119: auxiliary electrode
123: foreign substance P: pixel region

Claims (13)

Forming a barrier rib on the boundary of the display area of the substrate on which the display area is defined;
Forming a first electrode on the substrate on which the barrier rib is formed;
Forming an auxiliary electrode covering the barrier rib and a first electrode spaced apart from the auxiliary electrode in the display region;
Forming a bank between the auxiliary electrode and the first electrode to surround the display region;
Exposing the auxiliary electrode formed on a side surface of the barrier rib and forming an organic light emitting layer covering the first electrode;
And forming a second electrode covering the organic light emitting layer and contacting the exposed auxiliary electrode.
The method according to claim 1,
Wherein the barrier ribs are reverse tapered.
The method according to claim 1,
Wherein forming the auxiliary electrode and the first electrode comprises:
Forming a first metal layer on the first substrate by selecting one of aluminum, silver, molybdenum, molybdenum alloy, titanium, titanium alloy, chromium, and chromium alloy;
Depositing indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) on the first metal layer to form a second metal layer;
And patterning the first and second metal layers to form the auxiliary electrode and the first electrode,
Wherein the second metal layer completely covers the barrier ribs.
The method of claim 3,
Wherein the lower layer of the first electrode serves as a reflector and the upper layer of the first electrode serves as an anode.
The method according to claim 1,
The forming of the organic light-
Characterized in that a liquid type organic light emitting material is formed by an ink jet or nozzle coating process.
6. The method of claim 5,
The forming of the organic light-
Forming a major injection layer by the ink jet or nozzle coating process;
Forming an electron transport layer, a light emitting layer, an electron transport layer, and an electron injection layer on top of the major injection layer by using any one of a shadow mask and a laser process.
The method according to claim 1,
Wherein forming the second electrode comprises:
Depositing at least one of aluminum, aluminum alloy, silver, magnesium, gold, and aluminum magnesium alloy on the organic light emitting layer to form a third metal layer;
And depositing indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) on the third metal layer to form a fourth metal layer.
8. The method of claim 7,
Wherein the fourth metal layer is formed to completely cover the barrier rib and is connected to the auxiliary electrode.
A barrier rib formed on the display region boundary on a substrate on which a display region is defined;
A first electrode formed on the display region of the substrate;
An auxiliary electrode covering the barrier rib and spaced apart from the first electrode;
An organic light emitting layer formed on the side surface of the barrier rib to expose the auxiliary electrode and cover the first electrode;
And a second electrode covering the organic light emitting layer and contacting the exposed auxiliary electrode.
10. The method of claim 9,
Wherein the barrier ribs are reverse tapered.
10. The method of claim 9,
Wherein the auxiliary electrode and the first electrode each comprise a first metal layer and a second metal layer over the first metal layer,
Wherein the first metal layer is made of any one of aluminum, silver, molybdenum, molybdenum alloy, titanium, titanium alloy, chromium, and chromium alloy,
The second metal layer is made of any one of indium-tin-oxide (ITO) and indium-zinc-oxide (IZO)
And the second metal layer of the auxiliary electrode completely covers the barrier ribs.
10. The method of claim 9,
Wherein the second electrode comprises a third metal layer and a fourth metal layer over the third metal layer,
Wherein the third metal layer is formed by depositing one or more of aluminum, an aluminum alloy, silver, magnesium, gold, and an aluminum magnesium alloy,
Wherein the fourth metal layer is made of any one of indium-tin-oxide (ITO) and indium-zinc-oxide (IZO).
13. The method of claim 12,
Wherein the fourth metal layer is formed so as to completely cover the barrier ribs and is connected to the auxiliary electrode at a side of the barrier rib.

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