CN113061847A - Display device evaporation device and evaporation method - Google Patents
Display device evaporation device and evaporation method Download PDFInfo
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- CN113061847A CN113061847A CN202110296943.3A CN202110296943A CN113061847A CN 113061847 A CN113061847 A CN 113061847A CN 202110296943 A CN202110296943 A CN 202110296943A CN 113061847 A CN113061847 A CN 113061847A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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Abstract
The application discloses a display device evaporation device and an evaporation method. The vapor deposition device of the embodiment of the application comprises a vapor deposition base platform and a vapor deposition unit. The evaporation base station is used for fixing a device to be evaporated. The evaporation unit is arranged opposite to the evaporation base platform and can move along a first direction, the evaporation unit comprises a first evaporation source and a second evaporation source which are used for evaporating different materials on a device to be evaporated, and the first evaporation source and the second evaporation source are arranged along the first direction; at the same time, a first evaporation area of a first evaporation source on a device to be evaporated comprises a first part and a second part which are arranged along a first direction, and a second evaporation area of a second evaporation source on the device to be evaporated is overlapped with the second part; the second evaporation area and the second part are used for forming a first film layer on the device to be evaporated, and the first part is used for forming a second film layer on the first film layer.
Description
Technical Field
The application relates to the field of display, in particular to an evaporation device and an evaporation method of a display device.
Background
An Organic Light Emitting Diode (OLED) display device is an active Light Emitting display device, and has become a mainstream display technology due to its advantages of simple manufacturing process, low cost, high contrast, wide viewing angle, low power consumption, and the like.
In the process of manufacturing a display device, a vacuum evaporation technique is generally used. Specifically, an evaporation source in the evaporation device heats an evaporation material, so that the evaporation material is converted into a gaseous state and is sprayed to the surface of a device to be evaporated, and the evaporated evaporation material is deposited on the surface of the device to be evaporated to form a film layer.
In the related art, one evaporation apparatus is used to manufacture one film layer, resulting in low evaporation efficiency of the evaporation apparatus.
Content of application
The embodiment of the application provides an evaporation device and an evaporation method of a display device, which can evaporate at least two film layers in one scanning process, and improve evaporation efficiency.
In a first aspect, an embodiment of the present application provides an evaporation apparatus for a display device, including:
the evaporation base station is used for fixing a device to be evaporated;
the evaporation unit is arranged opposite to the evaporation base station and can move along a first direction, the evaporation unit comprises a first evaporation source and a second evaporation source which are used for evaporating different materials on a device to be evaporated, and the first evaporation source and the second evaporation source are arranged along the first direction; at the same time, a first evaporation area of a first evaporation source on a device to be evaporated comprises a first part and a second part which are arranged along a first direction, and a second evaporation area of a second evaporation source on the device to be evaporated is overlapped with the second part; the second evaporation area and the second part are used for forming a first film layer on the device to be evaporated, and the first part is used for forming a second film layer on the first film layer.
In the evaporation device of the embodiment of the application, the second evaporation area of the second evaporation source is partially overlapped with the first evaporation area of the first evaporation source, so that at least two film layers can be formed on a device to be evaporated in one scanning process, the number of the film layers formed in one scanning process is increased, and the evaporation efficiency of the evaporation device is effectively improved.
In some embodiments, the evaporation unit further comprises a third evaporation source disposed on a side of the first evaporation source away from the second evaporation source; the third evaporation plating area of the third evaporation plating source on the device to be evaporated is located on one side, far away from the second part, of the first part, and the third evaporation plating area is used for forming a third film layer on the second film layer. In other embodiments, the evaporation unit further includes a third evaporation source disposed on a side of the second evaporation source away from the first evaporation source; the third evaporation coating area of the third evaporation coating source on the device to be evaporated is located on one side, far away from the first portion, of the second portion, the third evaporation coating area is used for forming a third film layer on the device to be evaporated, and the first film layer is formed on the third film layer. This application embodiment can further increase a rete in a scanning process through setting up the third coating by vaporization source, improves coating by vaporization device's coating by vaporization efficiency.
In some embodiments, the evaporation unit further comprises a movable stage arranged opposite to the evaporation base, and the first evaporation source, the second evaporation source and the third evaporation source are fixed on one side of the movable stage facing the evaporation base. The evaporation device also comprises a power unit which is connected with the movable carrier and is used for driving the movable carrier to move along the first direction. In some embodiments, the evaporation device further comprises a vacuum chamber, and the evaporation base, the evaporation unit and the power unit are accommodated in the vacuum chamber.
In some embodiments, the vapor deposition device further comprises a limiting unit connected to the vapor deposition unit, the limiting unit having a first opening and a second opening, the first opening for defining the first vapor deposition region, the second opening for defining the second vapor deposition region. In the embodiment of the present application, the first vapor deposition region and the second vapor deposition region can be defined by adjusting the size and the orientation of the first opening and the size and the orientation of the second opening, so that a part of the first vapor deposition region overlaps with the second vapor deposition region.
In some embodiments, the restriction unit includes a first restriction plate and a second restriction plate disposed in the first direction. The first limiting plate includes a first connecting portion connecting the evaporation unit and the first inclined portion, and the first inclined portion is inclined toward the second limiting plate. The second limiting plate includes a second connecting portion connecting the evaporation unit and a second inclined portion inclined toward the first limiting plate. The first and second inclined portions form a first opening therebetween. In some embodiments, the first angled portion is rotatably coupled to the first coupling portion and the second angled portion is rotatably coupled to the second coupling portion.
In a second aspect, an embodiment of the present application further provides an evaporation method, which is applied to the evaporation apparatus according to any one of the embodiments of the first aspect. The evaporation method comprises the following steps:
fixing a device to be evaporated on an evaporation base;
moving an evaporation unit along a first direction, wherein a first evaporation source and a second evaporation source of the evaporation unit are used for evaporating different materials on a device to be evaporated; at the same time, a first evaporation area of a first evaporation source on a device to be evaporated comprises a first part and a second part which are continuously arranged along a first direction, and a second evaporation area of a second evaporation source on the device to be evaporated is overlapped with the second part;
along with the movement of the evaporation unit, the second evaporation area and the second part form a first film layer on the device to be evaporated, and the first part forms a second film layer on the first film layer.
In some embodiments, in the step of fixing the device to be evaporated on the evaporation stage, the device to be evaporated includes a substrate and a first electrode layer formed on the substrate. The first film layer is formed on the first electrode layer.
In some embodiments, in the step of moving the evaporation unit along the first direction, the first evaporation source and the second evaporation source of the evaporation unit are used for evaporating different materials on the device to be evaporated: the first evaporation source is used for evaporating a hole transport material, and the second evaporation source is used for evaporating a hole injection material; or the first evaporation source is used for evaporating the electron injection material, and the second evaporation source is used for evaporating the electron transport material.
In some embodiments, the evaporation unit further comprises a third evaporation source disposed on a side of the first evaporation source away from the second evaporation source. The third evaporation area of the third evaporation source on the device to be evaporated is positioned on one side of the first part, which is far away from the second part. The evaporation method also comprises the following steps: the third evaporation area forms a third film layer on the second film layer along with the movement of the evaporation unit. In some embodiments, a first evaporation source is used to evaporate the electron blocking material.
In some embodiments, the first layer is a hole injection layer, the second layer is a first hole transport layer, and the third layer is a first electron blocking layer. The evaporation method also comprises the following steps: and evaporating a first light-emitting layer, a first hole blocking layer, a first electron transport layer, a connecting layer, a second hole transport layer, a second electron blocking layer, a second light-emitting layer, a second hole blocking layer, a second electron transport layer, an electron injection layer and a second electrode layer on one side of the third film layer, which is far away from the second film layer.
Drawings
Other features, objects, and advantages of the present application will become apparent from the following detailed description of non-limiting embodiments thereof, when read in conjunction with the accompanying drawings, in which like reference characters designate the same or similar parts throughout the figures thereof, and which are not to scale.
Fig. 1 is a schematic structural diagram of an evaporation apparatus according to an embodiment of the present application;
fig. 2 to 4 are schematic partial structural diagrams of an evaporation apparatus according to an embodiment of the present disclosure at different times during an evaporation process;
fig. 5 is a schematic structural view of a vapor deposition unit and a limiting unit of a vapor deposition device according to an embodiment of the present application;
fig. 6 is a schematic structural diagram of an evaporation apparatus according to another embodiment of the present application;
FIG. 7 is a schematic flow chart of an evaporation method according to some embodiments of the present disclosure;
FIG. 8 is a schematic structural diagram of a stacked OLED display panel;
fig. 9 is a schematic structural view of a vapor deposition device according to still another embodiment of the present application.
Detailed Description
Features and exemplary embodiments of various aspects of the present application will be described in detail below, and in order to make objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application. It will be apparent to one skilled in the art that the present application may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the present application by illustrating examples thereof.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
It will be understood that when a layer, region or layer is referred to as being "on" or "over" another layer, region or layer in describing the structure of the component, it can be directly on the other layer, region or layer or intervening layers or regions may also be present. Also, if the component is turned over, one layer or region may be "under" or "beneath" another layer or region.
The embodiment of the application provides an evaporation device of a display device, which is used for preparing a film layer in the display device by utilizing a vacuum evaporation technology. In some embodiments, the evaporation device of the embodiments of the present application is used for preparing an OLED display panel.
Fig. 1 is a schematic structural diagram of an evaporation apparatus according to an embodiment of the present application.
As shown in fig. 1, the vapor deposition device according to the embodiment of the present invention includes a vapor deposition base 1 and a vapor deposition unit 2.
The evaporation base platform 1 is used for fixing a device 3 to be evaporated. In some embodiments, the evaporation base 1 may adsorb the device to be evaporated 3 to fix the device to be evaporated 3. The device to be evaporated 3 is, for example, substantially flat.
The vapor deposition unit 2 is provided opposite to the vapor deposition base 1 and is movable in the first direction X. In some embodiments, the evaporation base 1 is located above the evaporation unit 2, and the device to be evaporated 3 is fixed on the lower side of the evaporation base 1. The evaporation unit 2 is located below the device to be evaporated 3. The first direction X is exemplarily a direction parallel to the device to be evaporated 3.
The evaporation unit 2 is used for evaporating a film layer on the surface of the device 3 to be evaporated. In the evaporation process, the evaporation unit 2 moves from one end of the device 3 to be evaporated to the other end of the device 3 to be evaporated in the first direction X to evaporate a film layer on the surface of the device 3 to be evaporated. This evaporation process may be referred to as a scanning process, and the first direction X may also be referred to as a scanning direction.
The evaporation unit 2 includes a first evaporation source 21 and a second evaporation source 22 for evaporating different materials on the device to be evaporated 3, and the first evaporation source 21 and the second evaporation source 22 are provided along the first direction X. The first vapor deposition source 21 and the second vapor deposition source 22 are arranged to be capable of moving in synchronization in the first direction X.
In some embodiments, each of the first evaporation source 21 and the second evaporation source 22 includes an evaporation crucible and a nozzle 24 provided at an outlet of the evaporation crucible. The evaporation crucible is used for placing evaporation materials, and the nozzle 24 is used for injecting the gasified evaporation materials to the device 3 to be evaporated. In the vapor deposition, the first material is placed in the vapor deposition crucible of the first vapor deposition source 21 and the second material is placed in the vapor deposition crucible of the second vapor deposition source 22, as needed.
In the evaporation process, the first evaporation source 21 forms a first evaporation region 211 on the device to be evaporated 3. The first vapor deposition region 211 is an effective vapor deposition range of the first vapor deposition source 21 on the device to be vapor deposited 3 at a certain time. As the first vapor deposition source 21 moves, the first vapor deposition region 211 also moves.
Likewise, in the evaporation process, the second evaporation source 22 forms the second evaporation region 221 on the device to be evaporated 3. The second vapor deposition region 221 is an effective vapor deposition range of the second vapor deposition source 22 on the device to be vapor deposited 3 at a certain time. As the second vapor deposition source 22 moves, the second vapor deposition region 221 also moves.
At the same time, the first evaporation source 21 includes a first section 211a and a second section 211b arranged in the first direction X in the first evaporation region 211 on the device to be evaporated 3, and the second evaporation source 22 overlaps the second section 211b in the second evaporation region 221 on the device to be evaporated 3. At this time, the first vapor deposition source 21 and the second vapor deposition source 22 simultaneously vapor-deposit the first material and the second material in the overlapping portion of the second vapor deposition region 221 and the second section 211b, and the first vapor deposition source 21 vapor-deposits the first material in the first section 211 a.
The second evaporation area 221 and the second section 211b are used to form a first film layer 4 on the device to be evaporated 3, and the first section 211a is used to form a second film layer 5 on the first film layer 4. Illustratively, as the evaporation unit 2 moves, the second evaporation region 221 and the second section 211b continuously move on the device to be evaporated 3 and form the first film layer 4 including the first material and the second material, and the first section 211a continuously moves on the device to be evaporated 3 and forms the second film layer 5 including the first material.
Fig. 2 to 4 are schematic partial structural diagrams of an evaporation apparatus according to an embodiment of the present application at different times during an evaporation process.
As shown in fig. 2, when it is necessary to perform vapor deposition on the device to be vapor deposited 3, the first vapor deposition source 21 and the second vapor deposition source 22 respectively inject the vaporized first material and second material upward, and a part of the coverage of the first material overlaps with the coverage of the second material. At the same time, the first evaporation source 21 and the second evaporation source 22 move synchronously in the first direction X. Exemplarily, in fig. 2, the first evaporation source 21 and the second evaporation source 22 are synchronously moved from right to left.
With the movement of the evaporation unit 2, the device to be evaporated 3 gradually enters the evaporation range of the first evaporation source 21 and the evaporation range of the second evaporation source 22. A part of the first material ejected from the first evaporation source 21 and the second material ejected from the second evaporation source 22 are deposited in the same region of the device to be evaporated 3, and the first film layer 4 including the first material and the second material is formed on the device to be evaporated 3 with the continuous movement of the evaporation unit 2.
As shown in fig. 3, since the coverage of the first material injected from the first evaporation source 21 is larger than the coverage of the second material injected from the second evaporation source 22, the first material injected from the first evaporation source 21 is gradually deposited on the surface of the first film layer 4 and forms the second film layer 5 including only the first material as the evaporation unit 2 moves.
In the vapor deposition device according to the embodiment of the present application, by overlapping the second vapor deposition region 221 of the second vapor deposition source 22 with a part of the first vapor deposition region 211 of the first vapor deposition source 21, at least two film layers can be formed on the device to be vapor deposited 3 in one scanning process, the number of film layers formed in one scanning process is increased, and the vapor deposition efficiency of the vapor deposition device is effectively improved.
In some embodiments, the evaporation unit 2 can also move from left to right, so that in a scanning process, a second film layer 5 including the first material can be formed on the device to be evaporated 3, and then a first film layer 4 including the first material and the second material can be formed on the second film layer 5.
In some embodiments, the evaporation unit 2 further includes a third evaporation source 23, and the third evaporation source 23 is disposed on a side of the first evaporation source 21 away from the second evaporation source 22. The second vapor deposition source 22 and the third vapor deposition source 23 are respectively provided on both sides of the first vapor deposition source 21 in the first direction X. The third vapor deposition source 23 can move in synchronization with the first vapor deposition source 21 in the first direction X.
The third evaporation source 23 is used to evaporate a third material on the device to be evaporated 3. In some embodiments, the third material is different from the first material and the second material.
In the evaporation process, the third evaporation source 23 forms a third evaporation region 231 on the device to be evaporated 3. The third vapor deposition region 231 is an effective vapor deposition range of the third vapor deposition source 23 on the device to be vapor deposited 3 at a certain time. As the third vapor deposition source 23 moves, the third vapor deposition region 231 also moves.
In some embodiments, the third evaporation region 231 does not overlap with the first evaporation region 211 at the same time. In some embodiments, the third evaporation area 231 is located on a side of the first portion 211a away from the second portion 211b, and the third evaporation area 231 is used for forming the third film layer 6 on the second film layer 5. Illustratively, the third evaporation region 231 continuously moves on the device to be evaporated 3 and forms the third film layer 6 including the third material as the evaporation unit 2 moves.
As shown in fig. 4, as the evaporation unit 2 moves, the third evaporation source 23 sprays the third material, which is gradually deposited on the surface of the second film layer 5, to form the third film layer 6 including only the third material.
This application embodiment can further increase a rete in a scanning process through setting up third coating by vaporization source 23, improves coating by vaporization device's coating by vaporization efficiency.
Referring back to fig. 1, in some embodiments, the evaporation unit 2 further includes a movable stage 25 disposed opposite to the evaporation base 1, and the first evaporation source 21, the second evaporation source 22, and the third evaporation source 23 are fixed on a side of the movable stage 25 facing the evaporation base 1.
The vapor deposition device further includes a power unit 7 connected to the moving stage 25 and configured to drive the moving stage 25 to move in the first direction X. The power unit 7 drives the first evaporation source 21, the second evaporation source 22, and the third evaporation source 23 to move synchronously along the first direction X by moving the stage 25.
Illustratively, the power unit 7 includes a guide rail and a driving member, the moving stage 25 is slidably disposed on the guide rail along the first direction X, and the driving member is connected to the moving stage 25. The driving member comprises a cylinder or a motor.
In one embodiment, the vapor deposition device further includes a vacuum chamber 8, and the vapor deposition base 1, the vapor deposition unit 2, and the power unit 7 are accommodated in the vacuum chamber 8. The vacuum chamber 8 can provide a vacuum environment for the evaporation process.
In an embodiment, the evaporation apparatus further includes a heating unit for heating the evaporation crucible to change the evaporation material in the evaporation crucible from a liquid or solid phase to a gaseous phase.
Fig. 5 is a schematic structural view of a vapor deposition unit and a limiting unit of a vapor deposition device according to an embodiment of the present application.
As shown in fig. 5, in some embodiments, the evaporation device further includes a limiting unit 9 connected to the evaporation unit 2. The limiting unit 9 is used to limit the effective vapor deposition ranges of the first vapor deposition source 21, the second vapor deposition source 22, and the third vapor deposition source 23 at the same time.
In some embodiments, the limiting unit 9 has a first opening 91 and a second opening 92, the first opening 91 being used to define the first evaporation region 211, and the second opening 92 being used to define the second evaporation region 221. The first opening 91 is provided to face the nozzle 24 of the first vapor deposition source 21, and the second opening 92 is provided to face the nozzle 24 of the second vapor deposition source 22. In the embodiment of the present application, the first vapor deposition region 211 and the second vapor deposition region 221 can be defined such that a part of the first vapor deposition region 211 overlaps the second vapor deposition region 221 by adjusting the size and the orientation of the first opening 91 and the size and the orientation of the second opening 92.
In some embodiments, the limiting unit 9 further has a third opening 93, and the third opening 93 is used to define the third evaporation region 231. The third openings 93 are provided to face the nozzles 24 of the third vapor deposition source 23, and the third vapor deposition regions 231 can be defined by adjusting the size and orientation of the third openings 93.
In some embodiments, the limiting unit 9 includes a first limiting plate 94 and a second limiting plate 95 disposed along the first direction X. The first restriction plate 94 includes a first connection portion 941 and a first inclined portion 942, the first connection portion 941 connects the vapor deposition unit 2 and the first inclined portion 942, and the first inclined portion 942 is inclined toward the second restriction plate 95. The second limiting plate 95 includes a second connection portion 951 and a second inclined portion 952, the second connection portion 951 connects the vapor deposition unit 2 and the second inclined portion 952, and the second inclined portion 952 is inclined toward the first limiting plate 94. The first and second slope parts 942 and 952 form a first opening 91 therebetween.
In some embodiments, the first connection portion 941 and the second connection portion 951 are located on both sides of the nozzle 24 of the first evaporation source 21 in the first direction X.
In some embodiments, the first tilting portion 942 is rotatably connected to the first connecting portion 941, and the second tilting portion 952 is rotatably connected to the second connecting portion 951. Illustratively, the first tilting portion 942 is coupled to the first coupling portion 941 via a rotation shaft, and the second tilting portion 952 is coupled to the second coupling portion 951 via a rotation shaft. In this way, in the embodiment of the present application, the first connection portion 941 and the second connection portion 951 may be rotated as needed to change the size and the orientation of the first opening 91, and further adjust the first vapor deposition region 211.
In other embodiments, the first inclined portion 942 is fixed to the first connecting portion 941, and the second inclined portion 952 is fixed to the second connecting portion 951. Illustratively, the first inclined portion 942 and the first connecting portion 941 are two metal plates and connected by welding, and the second inclined portion 952 and the second connecting portion 951 are two metal plates and connected by welding.
In some embodiments, the limiting unit 9 further includes a third limiting plate 96 and a fourth limiting plate 97, and the third limiting plate 96, the first limiting plate 94, the second limiting plate 95, and the fourth limiting plate 97 are sequentially disposed along the first direction X.
The third limiting plate 96 includes a third connecting portion 961 and a third inclined portion 962, the third connecting portion 961 connects the vapor deposition unit 2 and the third inclined portion 962, and the third inclined portion 962 is inclined toward the first limiting plate 94. Illustratively, the third connection portion 961 and the first connection portion 941 are respectively located on both sides of the nozzle 24 of the third evaporation source 23 along the first direction X.
The fourth limiting plate 97 includes a fourth connection portion 971 and a fourth inclined portion 972, the fourth connection portion 971 connects the vapor deposition unit 2 and the fourth inclined portion 972, and the fourth inclined portion 972 is inclined toward the second limiting plate 95. Exemplarily, the fourth connection portion 971 and the second connection portion 951 are respectively located on both sides of the nozzle 24 of the second evaporation source 22 in the first direction X.
The first restriction plate 94 further includes a fifth inclined portion 943, and the fifth inclined portion 943 is connected to the first connection portion 941 and is inclined toward the third restriction plate 96. A third opening 93 is formed between the fifth inclined portion 943 and the third inclined portion 962. Illustratively, the first limiting plate 94 is generally Y-shaped in configuration.
The second limiting plate 95 further includes a sixth inclined portion 953, and the sixth inclined portion 953 is connected to the second connecting portion 951 and inclined toward the fourth limiting plate 97. The second opening 92 is formed between the sixth inclined portion 953 and the fourth inclined portion 972. Illustratively, the second limiting plate 95 is generally Y-shaped in configuration.
Fig. 6 is a schematic structural diagram of an evaporation apparatus according to another embodiment of the present application.
As shown in fig. 6, in some embodiments, the evaporation unit 2 further includes a third evaporation source 23, and the third evaporation source 23 is disposed on a side of the second evaporation source 22 away from the first evaporation source 21. The first vapor deposition source 21, the second vapor deposition source 22, and the third vapor deposition source 23 are provided in this order along the first direction X.
In some embodiments, a third evaporation region 231 of the third evaporation source 23 on the device to be evaporated 3 is located on a side of the second portion 211b away from the first portion 211a, and the third evaporation region 231 is used to form a third film layer 6 on the device to be evaporated 3, and the first film layer 4 is formed on the third film layer 6. In one scanning process, the evaporation unit 2 sequentially forms a third film layer 6, a first film layer 4 and a second film layer 5 on the device 3 to be evaporated.
The embodiment of the application also discloses an evaporation method which is applied to the evaporation device in any one of the embodiments.
Fig. 7 is a schematic flow chart of an evaporation method according to some embodiments of the present application.
Referring to fig. 1 to 7, an evaporation method according to an embodiment of the present application includes:
s100, fixing the device 3 to be evaporated on the evaporation base platform 1;
s200, moving the evaporation unit 2 along a first direction X, wherein a first evaporation source 21 and a second evaporation source 22 of the evaporation unit 2 are used for evaporating different materials on the device 3 to be evaporated; at the same time, the first evaporation region 211 of the first evaporation source 21 on the device 3 to be evaporated includes a first part 211a and a second part 211b which are continuously arranged along the first direction X, and the second evaporation region 221 of the second evaporation source 22 on the device 3 to be evaporated overlaps with the second part 211 b;
s300, as the evaporation unit 2 moves, the second evaporation region 221 and the second section 211b form the first film layer 4 on the device to be evaporated 3, and the first section 211a forms the second film layer 5 on the first film layer 4.
In the vapor deposition method according to the embodiment of the present application, by overlapping the second vapor deposition region 221 of the second vapor deposition source 22 with a part of the first vapor deposition region 211 of the first vapor deposition source 21, at least two film layers can be formed on the device to be vapor deposited 3 in one scanning process, the number of film layers formed in one scanning process is increased, and the vapor deposition efficiency is effectively improved.
In some embodiments, in step S100, the device to be evaporated 3 includes a substrate and a first electrode layer formed on the substrate. Illustratively, the first electrode layer is an anode layer.
In some embodiments, in step S300, the first film layer 4 is formed on the first electrode layer.
In some embodiments, in step S200, the first evaporation source 21 is used to evaporate a hole transport material, such as TCTA, TAPC, or the like; the second evaporation source 22 is used to evaporate a hole injection material, for example, MoO3, WO3, or other metal oxide. The first film layer 4 evaporated by the first evaporation source 21 and the second evaporation source 22 is a hole injection layer, and the second film layer 5 evaporated by the first evaporation source 21 is a hole transport layer. In some embodiments, the hole injection layer has a doping concentration of the hole injection material of 0.5% to 1.2% and a thickness of the hole injection layer of 7nm to 12 nm. The hole injection layer is doped with the hole injection material, so that hole injection can be enhanced, a hole transport barrier between the anode and the hole transport layer is reduced, and the turn-on voltage of the device is reduced.
The thickness of each film layer can be realized by adjusting the evaporation rate, and the evaporation rate can be regulated and controlled by changing the temperature and the moving speed of the evaporation unit 2. Similarly, the doping ratio of the material in the first film layer 4 can be adjusted by adjusting the evaporation rate.
In some embodiments, the evaporation method further includes step S400: the third vapor deposition region 231 forms the third film layer 6 on the second film layer 5 as the vapor deposition unit 2 moves.
In some embodiments, a third evaporation source 23 is used to evaporate the electron blocking material. The third film layer 6 is an electron blocking layer.
In other embodiments, in step S200, the first evaporation source 21 may also be used to evaporate an electron injection material, such as LiF, Liq, or the like; the second evaporation source 22 is used to evaporate an electron transport material such as Alq3 or BCP. The first film layer 4 evaporated by the first evaporation source 21 and the second evaporation source 22 is an electron transport layer, and the second film layer 5 evaporated by the first evaporation source 21 is an electron injection layer. Illustratively, Liq is doped with an electron transport material to facilitate electron transport. For example, in the electron transport layer, the doping ratio of the electron transport material to Liq is 3:7 to 7: 3. In some embodiments, the electron transport layer has a thickness of 20nm to 30 nm.
The evaporation device and the evaporation method can be used for evaporation of the OLED display panel.
Besides dust and shock resistance, zero retardation, flexible display, anti-reflection and glare, the OLED panel also needs to have more severe reliability in high and low temperature environment resistance and service life. The laminated OLED display panel, also known as a Tandem OLED, has been produced, and has the characteristics of high efficiency and long service life. The stacked OLED display panel is formed by connecting a plurality of light emitting cells in series through a charge generation layer (connection layer), thereby improving current efficiency and prolonging the lifetime of the device.
The laminated OLED display panel has more film layers, and more evaporation devices are needed during preparation. The evaporation device provided by the embodiment of the application can evaporate a plurality of films in one scanning process, so that the manufacturing process is simplified, the productivity is improved, and the cost is reduced.
Fig. 8 is a schematic structural diagram of a stacked OLED display panel.
As shown in fig. 8, in some embodiments, the stacked OLED display panel includes two light emitting cells and one connection layer.
Specifically, the stacked OLED display panel includes a Substrate (Substrate) and a first electrode layer (e.g., an Anode layer), a Hole Injection Layer (HIL), a first hole transport layer (HTL-1), a first electron blocking layer (EBL-1), a first light emitting layer (EML-1), a first hole blocking layer (HBL-1), a first electron transport layer (ETL-1), a connection layer, a second hole transport layer (HTL-2), a second electron blocking layer (EBL-2), a second light emitting layer (EML-2), a second hole blocking layer (HBL-2), a second electron transport layer (ETL-2), an Electron Injection Layer (EIL), and a second electrode layer (e.g., a Cathode layer Cathode) stacked on the Substrate.
In some embodiments, the connection layer includes an N-doped layer (N-CGL) and a P-doped layer (P-CGL), the N-doped layer being located between the P-doped layer and the first electron transport layer (ETL-1).
In some embodiments, the first film layer 4 is a Hole Injection Layer (HIL), the second film layer 5 is a first hole transport layer (HTL-1), and the third film layer 6 is a first electron blocking layer (EBL-1).
In some embodiments, the evaporation method further includes step S500: and a first light-emitting layer, a first hole blocking layer, a first electron transport layer, a connecting layer, a second hole transport layer, a second electron blocking layer, a second light-emitting layer, a second hole blocking layer, a second electron transport layer, an electron injection layer and a second electrode layer are evaporated on one side of the third film layer 6, which is far away from the second film layer 5.
In some embodiments, the evaporation device of the embodiment of the present application can also be used for evaporating the second hole blocking layer (HBL-2), the second electron transport layer (ETL-2) and the Electron Injection Layer (EIL). For example, in the vapor deposition device shown in fig. 6, the third vapor deposition source 23 is used to deposit a hole blocking material, the second vapor deposition source 22 is used to deposit an electron transporting material, and the first vapor deposition source 21 is used to deposit an electron injecting material (for example, Liq). The evaporation unit 2 moves from right to left, and a second hole blocking layer including a hole blocking material, a second electron transport layer including an electron transport material and Liq, and an electron injection layer including an electron injection material are sequentially formed on the second light emitting layer.
In some embodiments, the evaporation device of the present application can also be used to evaporate the P-doped layer, the second hole transport layer, and the second electron blocking layer. For example, in the vapor deposition device shown in fig. 1, the first vapor deposition source 21 is used to deposit a hole transport material, the second vapor deposition source 22 is used to deposit a P-type material, and the third vapor deposition source 23 is used to deposit an electron blocking material. The evaporation unit 2 moves from right to left, and a P-doped layer including a P-type material and a hole transport material, a second hole transport layer including a hole transport material, and a second electron blocking layer including an electron blocking material are sequentially formed on the N-doped layer.
In some embodiments, the structure of the evaporation apparatus can be further adjusted to evaporate the first hole blocking layer and the first electron transport layer. Fig. 9 is a schematic structural view of a vapor deposition device according to still another embodiment of the present application. As shown in fig. 9, the third evaporation source 23 is used to evaporate a hole blocking material, the second evaporation source 22 is used to evaporate an electron transport material, and the first evaporation source 21 is used to evaporate Liq. In the vapor deposition device shown in fig. 9, the first vapor deposition region 211 of the first vapor deposition source 21 and the second vapor deposition region 221 of the second vapor deposition source 22 overlap at the same time. The evaporation unit 2 moves from right to left, and a first hole blocking layer including a hole blocking material and a first electron transport layer including an electron transport material and Liq are sequentially formed on the first light emitting layer.
In summary, the evaporation device of the embodiment of the present application evaporates a plurality of films in a scanning process, and can be used for an evaporation process of a stacked OLED display panel to simplify a manufacturing process and reduce cost.
In accordance with the embodiments of the present application as described above, these embodiments are not exhaustive and do not limit the application to the specific embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the application and its practical application, to thereby enable others skilled in the art to best utilize the application and its various modifications as are suited to the particular use contemplated. The application is limited only by the claims and their full scope and equivalents.
Claims (10)
1. An evaporation apparatus for a display device, comprising:
the evaporation base station is used for fixing a device to be evaporated;
the evaporation unit is arranged opposite to the evaporation base station and can move along a first direction, the evaporation unit comprises a first evaporation source and a second evaporation source which are used for evaporating different materials on the device to be evaporated, and the first evaporation source and the second evaporation source are arranged along the first direction; at the same time, a first evaporation area of the first evaporation source on the device to be evaporated comprises a first part and a second part which are arranged along the first direction, and a second evaporation area of the second evaporation source on the device to be evaporated is overlapped with the second part; the second evaporation area and the second part are used for forming a first film layer on the device to be evaporated, and the first part is used for forming a second film layer on the first film layer.
2. The vapor deposition apparatus according to claim 1,
the evaporation unit also comprises a third evaporation source, and the third evaporation source is arranged on one side of the first evaporation source, which is far away from the second evaporation source; a third evaporation area of the third evaporation source on the device to be evaporated is positioned on one side, far away from the second part, of the first part, and the third evaporation area is used for forming a third film layer on the second film layer;
or
The evaporation unit also comprises a third evaporation source, and the third evaporation source is arranged on one side of the second evaporation source, which is far away from the first evaporation source; and a third evaporation area of the third evaporation source on the device to be evaporated is positioned on one side of the second part, which is far away from the first part, and the third evaporation area is used for forming a third film layer on the device to be evaporated, and the first film layer is formed on the third film layer.
3. The vapor deposition apparatus according to claim 2,
the evaporation unit also comprises a movable carrier which is arranged opposite to the evaporation base station, and the first evaporation source, the second evaporation source and the third evaporation source are fixed on one side of the movable carrier, which faces the evaporation base station;
the evaporation device also comprises a power unit which is connected with the movable carrying platform and is used for driving the movable carrying platform to move along the first direction;
preferably, the evaporation device further includes a vacuum chamber, and the evaporation base, the evaporation unit, and the power unit are housed in the vacuum chamber.
4. The vapor deposition device according to claim 1, further comprising a limiting unit connected to the vapor deposition unit, the limiting unit having a first opening and a second opening, the first opening defining the first vapor deposition region, the second opening defining the second vapor deposition region.
5. The vapor deposition device according to claim 4, wherein the limiting unit includes a first limiting plate and a second limiting plate provided along the first direction;
the first limiting plate includes a first connecting portion connecting the evaporation unit and the first inclined portion, and the first inclined portion is inclined toward the second limiting plate;
the second limiting plate includes a second connection part connecting the evaporation unit and the second inclined part, and a second inclined part inclined toward the first limiting plate;
the first opening is formed between the first inclined part and the second inclined part;
preferably, the first inclined portion is rotatably connected to the first connecting portion, and the second inclined portion is rotatably connected to the second connecting portion.
6. An evaporation method applied to the evaporation apparatus according to claim 1, the evaporation method comprising:
fixing a device to be evaporated on an evaporation base;
moving an evaporation unit along a first direction, wherein a first evaporation source and a second evaporation source of the evaporation unit are used for evaporating different materials on the device to be evaporated; at the same time, a first evaporation area of the first evaporation source on the device to be evaporated comprises a first part and a second part which are continuously arranged along the first direction, and a second evaporation area of the second evaporation source on the device to be evaporated is overlapped with the second part;
with the movement of the evaporation unit, the second evaporation area and the second part form a first film layer on the device to be evaporated, and the first part forms a second film layer on the first film layer.
7. The evaporation method according to claim 6, wherein in the step of fixing the device to be evaporated on the evaporation base, the device to be evaporated comprises a substrate and a first electrode layer formed on the substrate;
the first film layer is formed on the first electrode layer.
8. The evaporation method according to claim 6, wherein in the step of moving an evaporation unit along a first direction, a first evaporation source and a second evaporation source of the evaporation unit are used for evaporating different materials on the device to be evaporated:
the first evaporation source is used for evaporating a hole transport material, and the second evaporation source is used for evaporating a hole injection material; or,
the first evaporation source is used for evaporating an electron injection material, and the second evaporation source is used for evaporating an electron transmission material.
9. A vapor deposition method according to claim 6,
the evaporation unit also comprises a third evaporation source, and the third evaporation source is arranged on one side of the first evaporation source, which is far away from the second evaporation source; a third evaporation area of the third evaporation source on the device to be evaporated is positioned on one side, far away from the second part, of the first part;
the evaporation method further comprises the following steps: the third evaporation area forms a third film layer on the second film layer along with the movement of the evaporation unit;
preferably, the first evaporation source is used for evaporating an electron blocking material.
10. A vapor deposition method according to claim 9,
the first film layer is a hole injection layer, the second film layer is a first hole transmission layer, and the third film layer is a first electron blocking layer;
the evaporation method further comprises the following steps: and evaporating a first light-emitting layer, a first hole blocking layer, a first electron transport layer, a connecting layer, a second hole transport layer, a second electron blocking layer, a second light-emitting layer, a second hole blocking layer, a second electron transport layer, an electron injection layer and a second electrode layer on one side of the third film layer, which is far away from the second film layer.
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Cited By (1)
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| CN116083858A (en) * | 2023-01-28 | 2023-05-09 | 京东方科技集团股份有限公司 | Vapor deposition device, vapor deposition method, organic light emitting diode device, and display panel |
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