TWI555057B - Organic vapor jet printing with a blanket gas - Google Patents

Organic vapor jet printing with a blanket gas Download PDF

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TWI555057B
TWI555057B TW100126051A TW100126051A TWI555057B TW I555057 B TWI555057 B TW I555057B TW 100126051 A TW100126051 A TW 100126051A TW 100126051 A TW100126051 A TW 100126051A TW I555057 B TWI555057 B TW I555057B
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chamber
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TW201212105A (en
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保羅E 柏洛斯
莫翰 斯德哈西 哈克斯納
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環球展覽公司
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228Gas flow assisted PVD deposition

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  • Engineering & Computer Science (AREA)
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  • Mechanical Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Description

藉填充氣之有機蒸氣噴射印刷Organic vapor jet printing by filling gas

本發明係關於一種有機蒸氣噴射印刷(OVJP)。This invention relates to an organic vapor jet printing (OVJP).

所主張的發明係以下方中之一或多者為代表及/或係聯合下方中之一或多者達成聯合大學公司研究協議製作:密歇根州大學董事會、普林斯頓大學董事會、南加州大學董事會及Universal Display Corporation。該協議係有效於製作所主張的發明當天及之前,及所主張的發明係因於該協議之範圍內所實施之活動而製作的。The claimed invention is one or more of the following: and/or one or more of the following parties to reach a joint university company research agreement: Michigan State University Board of Directors, Princeton University Board of Directors, University of Southern California Board of Directors and Universal Display Corporation. The agreement is valid for the production of the claimed invention on the day before and before, and the claimed invention was made for the activities carried out within the scope of the agreement.

就眾多原因而言,使用有機物質之光電裝置變得漸為所需。用以製造該等裝置之許多物質相對較廉價,因此,有機光電裝置具有優於無機裝置之成本優點。另外,有機物質之固有性質(諸如其可撓性)可使其良好地適用於諸如與可撓性基板有關之製造之特定應用。有機光電裝置之實例包括有機發光裝置(OLED)、有機光電晶體、有機光伏打電池及有機光偵測器。對於OLED,有機物質具有優於習知物質之性能優點。例如,有機發光層發光之波長一般可藉由適宜之摻雜劑輕易調諧。Optoelectronic devices using organic materials have become increasingly desirable for a number of reasons. Many of the materials used to make such devices are relatively inexpensive, and therefore, organic optoelectronic devices have the cost advantage over inorganic devices. Additionally, the inherent properties of organic materials, such as their flexibility, may make them well suited for particular applications such as manufacturing associated with flexible substrates. Examples of organic optoelectronic devices include organic light-emitting devices (OLEDs), organic optoelectronic crystals, organic photovoltaic cells, and organic photodetectors. For OLEDs, organic materials have performance advantages over conventional materials. For example, the wavelength at which the organic light-emitting layer emits light can generally be easily tuned by a suitable dopant.

OLED係利用當對該裝置施加電壓時可發出光之薄有機薄膜。就於諸如平面顯示器、照明及背光之應用中之用途,OLED成為越來越令人感興趣之技術。若干種OLED物質及組態述於美國專利案第5,844,363、6,303,238及5,707,745號中,其全文係以引用的方式併入本文中。The OLED utilizes a thin organic film that emits light when a voltage is applied to the device. For applications such as flat panel displays, lighting and backlighting, OLEDs are becoming an increasingly interesting technology. A number of OLED materials and configurations are described in U.S. Patent Nos. 5,844,363, 6, 303, 238, and 5, 707, 745, the entire contents of each of which are incorporated herein by reference.

沉積OLED及其他有機裝置之一種方法為有機蒸氣噴射印刷(OVJP)。OVJP之一般原理已述於2008年7月29日頒予之美國專利案第7,404,862號、2010年6月29日頒予之美國專利7,744,957、2008年10月7日頒予之美國專利案第7,431,968號、2010年5月25日頒予之美國專利案第7,722,927號及2008年2月21日申請之美國專利申請案第12/034,683號中,該等案均應以引用的方式併入本文中。One method of depositing OLEDs and other organic devices is organic vapor jet printing (OVJP). The general principles of OVJP are described in U.S. Patent No. 7,404,862, issued July 29, 2008, U.S. Patent 7,744,957, issued on Jun. 29, 2010, and U.S. Patent No. 7,431,968, issued on October 7, 2008. No. 7,722,927 issued May 25, 2010, and U.S. Patent Application Serial No. 12/034,683, filed on Feb. 21, 2008, all of which are incorporated herein by reference. .

文中所用術語「有機」包括可用以製造有機光電裝置之聚合材料及小分子有機材料。「小分子」係指為非聚合物之任何有機材料,及「小分子」實際上可為相當大。於一些情況下,小分子等可包含重複單元。例如,使用長鏈烷基作為取代基係無法自該「小分子」類別移去分子。小分子等亦可併入聚合物中(例如)作為聚合物主鏈上之側基或作為該主鏈之一部分。小分子等亦可充當樹枝狀聚合物之核部分,其係由建立於該核部分上之一系列化學殼組成。樹枝狀聚合物之核部分可為螢光或磷光小分子發射體。樹枝狀聚合物可為「小分子」,且吾等認為目前用於OLED領域中之所有樹枝狀聚合物為小分子。The term "organic" as used herein includes polymeric materials and small molecular organic materials that can be used to make organic optoelectronic devices. "Small molecule" means any organic material that is not a polymer, and "small molecules" can actually be quite large. In some cases, small molecules or the like may comprise repeating units. For example, the use of a long chain alkyl group as a substituent system cannot remove a molecule from the "small molecule" class. Small molecules and the like can also be incorporated into the polymer, for example, as pendant groups on the polymer backbone or as part of the backbone. Small molecules or the like can also serve as a core portion of a dendrimer composed of a series of chemical shells established on the core portion. The core portion of the dendrimer can be a fluorescent or phosphorescent small molecule emitter. Dendrimers can be "small molecules" and we believe that all dendrimers currently used in the field of OLEDs are small molecules.

文中所用「頂部」意指離基板最遠之處,而「底部」意指離基板最近之處。於第一層係描述為「位於」第二層上時,該第一層係位於離基板較遠之處。除非指明第一層係與第二層「接觸」,否則,第一及第二層之間可存有其他層。例如,即使其間有多層有機層,陰極亦可描述為「位於」陽極上。As used herein, "top" means the farthest from the substrate, and "bottom" means the closest to the substrate. When the first layer is described as being "located" on the second layer, the first layer is located further from the substrate. Unless the first layer is "contacted" with the second layer, there may be other layers between the first and second layers. For example, the cathode can be described as being "located" on the anode even if there are multiple layers of organic layers in between.

更多OLED相關細節及上述定義可參見美國專利案第7,279,704號,其全文係以引用的方式併入本文中。Further details of OLEDs and the above definitions can be found in U.S. Patent No. 7,279,704, the disclosure of which is incorporated herein in its entirety by reference.

本發明提供一種沉積有機物質之方法。提供其內置有基板之腔室。有機物質係經自導向於該基板之噴嘴噴射:第一氣體;及由該第一氣體攜帶之有機物質之蒸氣而沉積於該基板上。於沉積有機物質期間,將第二氣體提供於該腔室中。該第二氣體之流速為流入真空腔室內之所有氣體之流速總和之至少5%。該第二氣體具有較該第一氣體之分子量大至少20%之分子量。該第二氣體係經遠離該噴嘴之孔提供於該腔室中。The present invention provides a method of depositing an organic substance. A chamber having a built-in substrate is provided. The organic substance is sprayed through a nozzle directed to the substrate: a first gas; and a vapor of the organic substance carried by the first gas is deposited on the substrate. A second gas is provided in the chamber during deposition of the organic material. The flow rate of the second gas is at least 5% of the sum of the flow rates of all gases flowing into the vacuum chamber. The second gas has a molecular weight that is at least 20% greater than the molecular weight of the first gas. The second gas system is provided in the chamber through a hole remote from the nozzle.

較佳地,該第二氣體之流速為流入真空腔室內之所有氣體之流速總和之至少30%。更佳地,該第二氣體之流速為流入真空腔室內之所有氣體之流速總和之至少60%。Preferably, the flow rate of the second gas is at least 30% of the sum of the flow rates of all gases flowing into the vacuum chamber. More preferably, the flow rate of the second gas is at least 60% of the sum of the flow rates of all gases flowing into the vacuum chamber.

較佳地,於沉積有機物質期間,該真空腔室中之總壓力係介於1毫托至1托之間。Preferably, the total pressure in the vacuum chamber is between 1 mTorr and 1 Torr during the deposition of the organic material.

該第一氣體較佳為N2。該第二氣體較佳係選自由Ar、Kr、氟利昂、Xe、CO2及WF6組成之群。The first gas is preferably N 2 . The second gas is preferably selected from the group consisting of Ar, Kr, Freon, Xe, CO 2 and WF 6 .

該第二氣體可為單一物質。該第二氣體可為各具有較該第一氣體之分子量大至少20%之分子量之不同氣體之混合物。The second gas can be a single substance. The second gas may be a mixture of different gases each having a molecular weight that is at least 20% greater than the molecular weight of the first gas.

該第二氣體較佳具有較該第一氣體之分子量大至少100%之分子量。該第二氣體可為各具有較該第一氣體之分子量大至少100%之分子量之物質之混合物。The second gas preferably has a molecular weight that is at least 100% greater than the molecular weight of the first gas. The second gas may be a mixture of materials each having a molecular weight that is at least 100% greater than the molecular weight of the first gas.

該腔室可為真空腔室。The chamber can be a vacuum chamber.

本發明提供一種沉積有機物質之方法。提供其內置有基板之腔室。有機物質係經自導向於該基板之噴嘴噴射:第一氣體;及由該第一氣體攜帶之有機物質之蒸氣沉積於該基板上。於沉積有機物質期間,將第二氣體提供該腔室中。該第二氣體具有較該第一氣體之分子量大至少20%之分子量。該第二氣體係經遠離該噴嘴之孔提供於該腔室中。該噴嘴具有具有最小尺寸之孔。該有機物質係沉積於該基板上成為具有由該孔之形狀界定之形狀之圖案化特徵部。相對於在無該第二氣體下所進行之其他相同沉積,在沉積該有機物質期間腔室中該第二氣體之分壓係足以使離該圖案化特徵部邊緣一個最小尺寸距離處沉積之有機物質的量減小2倍。The present invention provides a method of depositing an organic substance. A chamber having a built-in substrate is provided. The organic substance is sprayed through a nozzle directed to the substrate: a first gas; and a vapor of an organic substance carried by the first gas is deposited on the substrate. A second gas is supplied to the chamber during deposition of the organic material. The second gas has a molecular weight that is at least 20% greater than the molecular weight of the first gas. The second gas system is provided in the chamber through a hole remote from the nozzle. The nozzle has a hole of the smallest size. The organic material is deposited on the substrate to form a patterned feature having a shape defined by the shape of the aperture. The partial pressure of the second gas in the chamber during deposition of the organic material is sufficient to deposit an organic layer at a minimum distance from the edge of the patterned feature relative to other identical deposits performed without the second gas The amount of substance is reduced by a factor of two.

一般,OLED包括至少一層位於陽極及陰極之間且電連接至陽極及陰極之有機層。當施加電流時,陽極注入電洞及陰極注入電子於該(等)有機層中。所注入之電洞及電子各朝著經帶相反電荷之電極遷移。當電子及電洞定域於同一分子上時,形成為具有激發能態之定域化電子-電洞對之「激子」。當激子依據光發射機制產生弛豫時即發光。在一些實例中,激子可定域於激元或激發複合物上。亦可呈現諸如熱弛豫之非輻射機制,然一般係視為非所要的。Typically, an OLED comprises at least one organic layer between an anode and a cathode and electrically connected to an anode and a cathode. When a current is applied, the anode is injected into the hole and the cathode injects electrons into the (or other) organic layer. The injected holes and electrons each migrate toward the oppositely charged electrode. When electrons and holes are localized on the same molecule, they are formed as "excitons" of localized electron-hole pairs with excited energy states. When an exciton generates relaxation according to a light emission mechanism, it emits light. In some examples, excitons can be localized to excitons or excited complexes. Non-radiative mechanisms such as thermal relaxation may also be present, but are generally considered undesirable.

圖1顯示一有機發光裝置100。該等圖不一定係按比例繪製。裝置100包括一基板110、一陽極115、一電洞注入層120、一電洞傳遞層125、一電子阻擋層130、一發射層135、一電洞阻擋層140、一電子傳遞層145、一電子注入層150、一保護層155及一陰極160。陰極160為具有一第一傳導層162及一第二傳導層164之複合陰極。可藉由依次沉積所述該等層而製得裝置100。該等不同層之性質及功能以及實例材料更詳細地述於US 7,279,704之第6至10欄中,該案係以引用的方式併入。FIG. 1 shows an organic light emitting device 100. These figures are not necessarily drawn to scale. The device 100 includes a substrate 110, an anode 115, a hole injection layer 120, a hole transfer layer 125, an electron blocking layer 130, an emission layer 135, a hole blocking layer 140, an electron transport layer 145, and a An electron injection layer 150, a protective layer 155 and a cathode 160. The cathode 160 is a composite cathode having a first conductive layer 162 and a second conductive layer 164. Apparatus 100 can be made by depositing the layers in sequence. The nature and function of the various layers and the example materials are described in more detail in columns 6 to 10 of US 7,279,704, which is incorporated by reference.

可提供該等層各者之更多實例。例如,可撓性及透明基板-陽極組合揭示於美國專利案第5,844,363號中,其全文係以引用的方式併入。p-摻雜型電洞傳遞層之一實例為如美國專利申請公開案第2003/0230980號所揭示之以50:1之莫耳比摻雜F取代4-TCNQ之m-MTDATA,該專利案全文係以引用的方式併入。發射及主體材料之實例揭示於Thompson等人之美國專利案第6,303,238號中,其全文係以引用的方式併入。n-摻雜型電子傳遞層之一實例為如美國專利申請公開案第2003/0230980號所揭示之以1:1之莫耳比摻雜Li之BPhen,其全文係以引用的方式併入。全文以引用方式併入之美國專利案第5,703,436及5,707,745號揭示陰極之實例,其包括具有金屬(諸如Mg:Ag)之薄層與上伏透明導電濺射沉積型ITO層之複合陰極。阻擋層之理論及用途更詳細地述於美國專利案第6,097,147號及美國專利申請公開案第2003/0230980號中,其全文係以引用的方式併入。注入層之實例提供於美國專利申請公開案第2004/0174116號中,其全文係以引用的方式併入。保護層之描述可參見美國專利申請公開案第2004/0174116號,其全文係以引用的方式併入。More examples of each of these layers can be provided. For example, a flexible and transparent substrate-anode combination is disclosed in U.S. Patent No. 5,844,363, the disclosure of which is incorporated herein in its entirety. An example of a p-doped type of hole-transporting layer is m-MTDATA in which a 50:1 molar ratio doping F is substituted for 4-TCNQ as disclosed in U.S. Patent Application Publication No. 2003/0230980, which is incorporated herein by reference. The full text is incorporated by reference. Examples of the emission and the host material are disclosed in U.S. Patent No. 6,303,238, the entire disclosure of which is incorporated herein by reference. An example of an n-doped electron-transporting layer is BPhen, which is doped with Li at a molar ratio of 1:1 as disclosed in U.S. Patent Application Publication No. 2003/0230980, the entire disclosure of which is incorporated herein by reference. An example of a cathode comprising a thin layer of a metal (such as Mg:Ag) and a composite cathode of an overlying transparent conductive sputter deposition type ITO layer is disclosed in U.S. Patent Nos. 5,703,436 and 5,707,745, each incorporated by reference. The theory and use of the barrier layer is described in more detail in U.S. Patent No. 6,097,147, and U.S. Patent Application Publication No. 2003/0230980, the entire disclosure of which is incorporated herein by reference. An example of an injection layer is provided in U.S. Patent Application Publication No. 2004/0174116, the entire disclosure of which is incorporated herein by reference. A description of the protective layer can be found in U.S. Patent Application Publication No. 2004/0174116, the entire disclosure of which is incorporated herein by reference.

圖2顯示一反向OLED 200。該裝置包括一基板210、一陰極215、一發射層220、一電洞傳遞層225及一陽極230。裝置200可藉由依次沉積所述之該等層而製造。由於大多數常用OLED組態具有位於該陽極上之陰極,而裝置200具有位於陽極230下方之陰極215,故裝置200可稱為「反向」OLED。可將類似於針對裝置100所描述之彼等之材料用於裝置200之對應層中。圖2提供可如何自裝置100之結構省去一些層之一實例。FIG. 2 shows an inverted OLED 200. The device includes a substrate 210, a cathode 215, an emissive layer 220, a hole transfer layer 225, and an anode 230. Device 200 can be fabricated by sequentially depositing the layers. Since most common OLED configurations have a cathode on the anode and device 200 has a cathode 215 underneath anode 230, device 200 can be referred to as a "reverse" OLED. Materials similar to those described for device 100 can be used in corresponding layers of device 200. Figure 2 provides an example of how some layers may be omitted from the structure of device 100.

圖1及2中所例示之簡單層狀結構係以非限制性實例之方式提供,及應明瞭本發明之實施例可用於多種其他結構。所描述之特定材料及結構實際上係例示性,及可使用其他材料及結構。功能性OLED可藉由以不同方式組合所述之不同層而得到,或可基於設計、性能及成本因素完全省去層。亦可包括未明確描述之其他層。可使用除已特定描述者以外之材料。雖然文中提供之許多實例描述不同層係包含單一材料,但應明瞭可使用諸如主體與摻雜劑之混合物或更一般言之為混合物之材料之組合。再者,該等層可具有不同子層。文中不同層之名稱之用意不在於進行嚴格限制。例如,在裝置200中,電洞傳遞層225傳遞電洞及注入電洞於發射層220中,且可描述為電洞傳遞層或電洞注入層。於一實施例中,OLED可描述為具有位於陰極與陽極之間之「有機層」。如(例如)針對圖1及2所述,該有機層可包括單層或可進一步包括一不同有機材料之多層。The simple layered structure illustrated in Figures 1 and 2 is provided by way of non-limiting example, and it should be understood that embodiments of the invention may be utilized in a variety of other configurations. The particular materials and structures described are exemplary in nature and other materials and structures may be used. Functional OLEDs can be obtained by combining the different layers in different ways, or layers can be completely omitted based on design, performance and cost factors. Other layers not explicitly described may also be included. Materials other than those specifically described may be used. While many of the examples provided herein describe that different layers comprise a single material, it should be understood that a combination of materials such as a mixture of a host and a dopant or, more generally, a mixture, can be used. Again, the layers can have different sub-layers. The meaning of the different layers in the text is not intended to be strictly limited. For example, in device 200, hole transfer layer 225 transfers holes and injection holes in emissive layer 220, and may be described as a hole transfer layer or a hole injection layer. In one embodiment, an OLED can be described as having an "organic layer" between the cathode and the anode. As described, for example, with respect to Figures 1 and 2, the organic layer can comprise a single layer or can further comprise multiple layers of a different organic material.

亦可使用未明確描述之結構及材料,諸如揭示於全文以引用的方式併入之Friend等人之美國專利案第5,247,190號中之包含聚合材料之OLED(PLED)。舉例另一實例,可使用具有單個有機層之OLED。OLED可(例如)如全文係以引用的方式併入之Forrest等人之美國專利案第5,707,745號中所述進行堆疊。OLED結構可偏離於圖1及2中所例示之簡單層狀結構。例如,該結構可包括改良外部偶合之傾斜反射表面(諸如述於Forrest等人之美國專利案第6,091,195號中之台面結構)及/或述於Bulovic等人之美國專利案第5,834,893號中之孔結構,該等專利案之全文係以引用的方式併入。</ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; By way of another example, an OLED having a single organic layer can be used. The OLEDs can be stacked, for example, as described in U.S. Patent No. 5,707,745, the entire disclosure of which is incorporated herein by reference. The OLED structure can deviate from the simple layered structure illustrated in Figures 1 and 2. For example, the structure may include a slanted reflective surface that is modified by an external coupling, such as the mesa structure described in U.S. Patent No. 6,091,195, the disclosure of which is incorporated herein by reference. The structure, the entire contents of which are incorporated by reference.

除非另外指明,否則,不同實施例之任何層可藉由任何適宜方法進行沉積。對於有機層,較佳之方法包括諸如述於全文係以引用的方式併入之美國專利案第6,013,982及6,087,196號中之熱蒸鍍、噴墨、諸如述於全文係以引用的方式併入之Forrest等人之美國專利案第6,337,102號中之有機氣相沉積(OVPD)及諸如述於全文係以引用的方式併入之美國專利申請案序號第10/233,470號中之經有機蒸氣噴射印刷(OVJP)沉積。其他適宜之沉積法包括旋塗法及其他基於溶液之方法。基於溶液之方法較佳係於氮氣或惰性氛圍中進行。對於其他層,較佳之方法包括熱蒸鍍。較佳之圖案化方法包括、諸如述於全文係以引用的方式併入之美國專利案第6,294,398及6,468,819號中之透過遮罩沉積、冷焊接及與諸如噴墨及OVJP之一些沉積法相關之圖案化。亦可採用其他方法。待沉積之材料可經改質以使得其等可與特定沉積法相容。例如,可將諸如支鏈或非支鏈且較佳包含至少3個碳之烷基及芳基之取代基用於小分子中,以增強其經歷溶液處理之能力。可使用具有20個碳或更多個碳之取代基,及3至20個碳為較佳之範圍。具有不對稱結構之材料可具有較具有對稱結構之彼等更好的溶液可處理性,因為非對稱材料可具有較低的再結晶傾向性。樹枝狀聚合物取代基可用以增強小分子經歷溶液處理之能力。Any of the various embodiments may be deposited by any suitable method, unless otherwise indicated. For the organic layer, the preferred method includes, for example, the thermal evaporation in the U.S. Patent Nos. 6,013,982 and 6,087,196, which are incorporated herein by reference in their entirety, the entire disclosure of which is incorporated herein by reference. Organic vapor-deposited (OVPD) in U.S. Patent No. 6,337,102, issued to U.S. Patent No. 6,337,102, the disclosure of which is incorporated herein by reference. ) deposition. Other suitable deposition methods include spin coating and other solution based methods. The solution based process is preferably carried out under nitrogen or an inert atmosphere. For other layers, preferred methods include thermal evaporation. The preferred method of patterning includes, by way of example, mask deposition, cold soldering, and patterns associated with deposition methods such as ink jet and OVJP, as disclosed in U.S. Patent Nos. 6,294,398 and 6,468,819 each incorporated herein by reference. Chemical. Other methods are also available. The material to be deposited can be modified such that it can be compatible with a particular deposition process. For example, substituents such as branched or unbranched and preferably containing at least 3 carbon alkyl and aryl groups can be used in small molecules to enhance their ability to undergo solution processing. A substituent having 20 carbons or more of carbon and 3 to 20 carbons may be used. Materials having an asymmetric structure may have better solution treatability than symmetric ones because asymmetric materials may have a lower tendency to recrystallize. Dendrimer substituents can be used to enhance the ability of small molecules to undergo solution processing.

根據本發明實施例製造之裝置可併入多種消費性產品,包括平板顯示器、電腦監視器、電視機、廣告牌、用於室內或室外照明及/或訊號傳導之燈、抬頭顯示器、全透明顯示器、可撓性顯示器、雷射印表機、電話、行動電話、個人數位助理(PDA)、膝上型電腦、數位相機、攝錄放影機、取景器、微顯示器、車輛、大面積壁、劇場或露天運動場屏或訊號傳導器。包括被動型矩陣及主動型矩陣之多種控制機構可用以控制根據本發明製造之裝置。該等裝置中之許多係計畫用於令人類舒適之溫度範圍(諸如18℃至30℃,及更佳室溫(20至25℃))。Devices made in accordance with embodiments of the present invention can be incorporated into a variety of consumer products, including flat panel displays, computer monitors, televisions, billboards, lamps for indoor or outdoor lighting and/or signal transmission, heads-up displays, fully transparent displays , flexible displays, laser printers, telephones, mobile phones, personal digital assistants (PDAs), laptops, digital cameras, camcorders, viewfinders, microdisplays, vehicles, large-area walls, Theater or open field screen or signal transmitter. A variety of control mechanisms, including passive matrices and active matrices, can be used to control devices made in accordance with the present invention. Many of these devices are designed for a comfortable temperature range (such as 18 ° C to 30 ° C, and better room temperature (20 to 25 ° C)).

文中所述之材料、結構及方法可具有於除了OLED之外之裝置中之應用。例如,其他諸如有機太陽能電池及有機光偵測器之光電裝置可利用該等材料、結構及方法。更一般地,例如有機電晶體之有機裝置可利用該等材料及結構。The materials, structures, and methods described herein can be used in devices other than OLEDs. For example, other optoelectronic devices such as organic solar cells and organic photodetectors can utilize such materials, structures, and methods. More generally, organic devices such as organic transistors can utilize such materials and structures.

許多情況下,有機蒸氣噴射印刷(OVJP)為一種沉積有機物質之理想方法。在不採用以不希望沉積至其上之基板阻擋或遮蓋部分為基之遮罩、光阻劑或類似圖案化技術下,OVJP可沉積具有由噴嘴界定之形狀或圖樣之有機分子,透過該噴嘴產生噴射。In many cases, organic vapor jet printing (OVJP) is an ideal method for depositing organic materials. The OVJP can deposit organic molecules having a shape or pattern defined by the nozzles, without the use of masks, photoresists or similar patterning techniques based on substrate blocking or masking portions that are not desired to be deposited thereon, through which the nozzles are deposited Produce a spray.

一般,OVJP系統之該噴嘴或該等噴嘴係與載氣源及有機分子源流體連通。Typically, the nozzles or nozzles of the OVJP system are in fluid communication with a carrier gas source and an organic molecular source.

文中所用「噴嘴」為於其離開機構之後針對材料流之導向、引導或者控制之機構。As used herein, a "nozzle" is a mechanism that directs, directs, or controls a flow of material after it leaves the mechanism.

一些(然並非所有)OVJP系統包括於腔室內之沉積。許多OVJP系統亦包括適以支撐位於噴嘴下之基板及相對於噴嘴移動之基板支撐架。該噴嘴、該基板支撐架或兩者可移動。於使用腔室之情況下,噴嘴及基板支撐架可位於該腔室內。使用腔室可較好地控制周圍條件,諸如背景壓力、氣體組成及溫度。文中所用之於噴嘴之「下方」意指位於噴嘴所指(即噴嘴指向於基板)之方向上。該噴嘴可定向於該基材之任何數量的方向上。Some (though not all) OVJP systems include deposition in the chamber. Many OVJP systems also include a substrate holder that is adapted to support the substrate under the nozzle and move relative to the nozzle. The nozzle, the substrate support or both can be moved. Where a chamber is used, the nozzle and substrate support can be located within the chamber. The use of chambers allows for better control of ambient conditions such as background pressure, gas composition and temperature. As used herein, "below" the nozzle means in the direction of the nozzle (i.e., the nozzle is directed toward the substrate). The nozzle can be oriented in any number of directions of the substrate.

OVJP實際上已證實使用單一載氣(通常是指氮氣)將有機蒸氣傳遞於噴嘴中,藉由該噴嘴沉積於與該噴嘴緊密接近之基板上,從而得到具有由該噴嘴之尺寸界定之橫向尺寸之薄膜。雖然,通常據簡單陳述,所沉積之薄膜之寬度係等於噴嘴之尺寸,但是利用較複雜之分析明瞭基板上不存有物理遮罩時,自該噴嘴噴射之有機分子之少於100%將沉積於該噴嘴本身之下。沉積於噴嘴區域外部之材料稱為「過度噴射」。假設有機裝置係易污染的(特定言之,有機發光裝置易存有具有較低激發能之發光分子),則少量之過度噴射(<0.1%)可能成問題。因此,期望使過度噴射最小化。OVJP has in fact demonstrated the use of a single carrier gas (generally referred to as nitrogen) to deliver organic vapor to the nozzle, which is deposited on the substrate in close proximity to the nozzle, thereby obtaining a lateral dimension defined by the size of the nozzle. The film. Although it is generally stated that the width of the deposited film is equal to the size of the nozzle, less than 100% of the organic molecules ejected from the nozzle will be deposited when more complex analysis is used to show that there is no physical mask on the substrate. Below the nozzle itself. The material deposited outside the nozzle area is referred to as "overspray." Assuming that the organic device is susceptible to contamination (specifically, organic light-emitting devices are susceptible to luminescent molecules with lower excitation energies), a small amount of over-injection (<0.1%) can be problematic. Therefore, it is desirable to minimize over-injection.

早已揭示於噴嘴周圍添加非有機性氣體之同軸串流(稱為「保護流」)可減少過度噴射,參見U.S. 7,744,957。然而,該同軸配置使得OVJP噴嘴之複雜性增加。文中揭示一種減少過度噴射之較簡單的方法,該方法係簡單地於沉積腔室內導入一種具有明顯較載氣大之原子質量之「填充」氣體而實現。A coaxial stream of non-organic gases (referred to as "protective flow") around the nozzle has been disclosed to reduce over-injection, see U.S. 7,744,957. However, this coaxial configuration increases the complexity of the OVJP nozzle. A simpler method of reducing overspray is disclosed herein by simply introducing a "filler" gas having a substantially higher atomic mass than the carrier gas in the deposition chamber.

圖3顯示於孔之與氣流垂直之方向上截取之4種不同噴嘴幾何結構之橫截面。各孔內之箭頭表示該孔之「最小尺寸」。數學術語中,於最小尺寸之情況下,相對於整個箭頭於與該箭頭垂直之方向上之平移,箭頭長度係處於局部最大值(對於圓形、橢圓形及三角形)或係恒定的(對於矩形),及該「最小」尺寸為最小局部最大值或針對此點產生而言係恒定的。圖3顯示分別具有圓形、橢圓形、三角形及矩形橫截面之孔310、320、330及340之橫截面。對於沉積線路而言,矩形孔為最佳之形狀,且其亦為相對容易獲於利用矽蝕刻之噴嘴中之形狀。然而,可使用其他形狀。Figure 3 shows a cross section of four different nozzle geometries taken in the direction perpendicular to the gas flow. The arrows in each hole indicate the "minimum size" of the hole. In mathematical terms, in the case of the smallest dimension, the length of the arrow is at a local maximum (for circles, ellipses, and triangles) or constant relative to the translation of the entire arrow in a direction perpendicular to the arrow (for rectangles) ), and the "minimum" size is the minimum local maximum or is constant for this point. Figure 3 shows cross sections of holes 310, 320, 330 and 340 having circular, elliptical, triangular and rectangular cross sections, respectively. For the deposition line, the rectangular hole is the optimum shape, and it is also relatively easy to obtain the shape in the nozzle which utilizes the ruthenium etching. However, other shapes can be used.

本發明提供一種沉積有機物質之方法。提供其內置有基板之腔室。有機物質係經自導向於基板之噴嘴噴射:第一氣體;及由該第一氣體攜帶之有機物質之蒸氣沉積於基板上。於沉積有機物質期間,將第二氣體提供於該腔室中。該第二氣體之流速為流入真空腔室內之所有氣體之流速總和之至少5%。該第二氣體具有較該第一氣體之分子量大至少20%之分子量。該第二氣體係經由遠離該噴嘴之孔提供於該腔室中。 The present invention provides a method of depositing an organic substance. A chamber having a built-in substrate is provided. The organic substance is sprayed through a nozzle directed to the substrate: a first gas; and a vapor of the organic substance carried by the first gas is deposited on the substrate. A second gas is provided in the chamber during deposition of the organic material. The flow rate of the second gas is at least 5% of the sum of the flow rates of all gases flowing into the vacuum chamber. The second gas has a molecular weight that is at least 20% greater than the molecular weight of the first gas. The second gas system is provided in the chamber via a hole remote from the nozzle.

較佳地,該第二氣體之流速為流入真空腔室內之所有氣體之流速總和之至少30%。更佳地,該第二氣體之流速為流入真空腔室內之所有氣體之流速總和之至少60%。 Preferably, the flow rate of the second gas is at least 30% of the sum of the flow rates of all gases flowing into the vacuum chamber. More preferably, the flow rate of the second gas is at least 60% of the sum of the flow rates of all gases flowing into the vacuum chamber.

已證實(參見圖5及相關之論述)可稱為「填充」氣體之第二氣體之存在相對於其中僅存有載氣替代較重填充氣體之方法使得過度噴射減少。該第二氣體之一個特徵為其係經由遠離噴嘴之孔導入腔室內。對於「遠離」噴嘴,其意指通過其引入填充氣體之孔係離開噴嘴孔之至少2個噴嘴孔的「最小尺寸」。於大多數實施例中,極有可能地,通過其引入填充氣體之孔係離得較遠。該填充氣體不同於「保護流」,於其之最常見實施例中,保護流係經由通過其引入載氣之噴嘴周圍之圓環引入腔室內,即:引入保護流之特定位置係關係於自噴嘴噴射之氣體之流體動力學。於其最純意義上,引入「填充氣體」之特定位置則無關緊要,因為腔室中之周圍氣體中存有填充氣體會影響自噴嘴噴射之氣體之流體動力學,從而導致較窄之噴射擴散。因此,相較於使用保護流,使用重的填充氣體可更易於實施。 It has been demonstrated (see Figure 5 and related discussion) that the presence of a second gas, which may be referred to as a "filler" gas, reduces the over-injection relative to a method in which only a carrier gas is present in place of the heavier fill gas. One feature of the second gas is that it is introduced into the chamber via a hole remote from the nozzle. By "away from" the nozzle, it is meant the "minimum dimension" of the at least two nozzle holes exiting the nozzle orifice through the orifice into which the gas is introduced. In most embodiments, it is highly probable that the pores through which the fill gas is introduced are further apart. The filling gas is different from the "protective flow". In its most common embodiment, the protective flow is introduced into the chamber via a ring around the nozzle through which the carrier gas is introduced, ie, the specific position at which the protective flow is introduced is related to The fluid dynamics of the gas injected by the nozzle. In its purest sense, it is irrelevant to introduce a specific location of the "filler gas" because the presence of a fill gas in the surrounding gas in the chamber affects the hydrodynamics of the gas ejected from the nozzle, resulting in a narrower jet diffusion. . Therefore, the use of a heavy fill gas can be easier to implement than using a protective flow.

對於「重的」,文中意指填充(或第二)氣體具有較載流(或第一)氣體大至少20%之分子量。大至少20%之分子量 係期望具有如相對於圖5及相關實驗所證實之效應,因為相較於N2之分子量14,Ar具有為18之分子量。由窄噴射擴散觀點可知,填充氣體相對載氣越重則越好。填充氣體之分子量較載氣之分子量大至少100%為較佳。 By "heavy" it is meant herein that the filled (or second) gas has a molecular weight that is at least 20% greater than the carrier (or first) gas. Molecular weight is at least 20% of the lines having the desired effect as demonstrated with respect to FIG. 5 and the related experiment, the molecular weight as compared to the 2 N of 14, Ar 18 having a molecular weight of. From the viewpoint of narrow jet diffusion, it is understood that the heavier the filling gas is, the better the carrier gas is. The molecular weight of the filling gas is preferably at least 100% greater than the molecular weight of the carrier gas.

較佳地,根據裝置性能,填充氣體為惰性。填充氣體不應與進行製造之裝置之材料發生反應。惰性且重之適宜氣體包括Ar、Kr、氟利昂、Xe、CO2及WF6。N2較佳係用作第一氣體,因為其為惰性且極輕。He亦可用作載氣,其顯示「較重」填充氣體之新的可能性。例如,N2係重於He,且當He為載氣時,N2可用作填充氣體。 Preferably, the fill gas is inert depending on the performance of the device. The fill gas should not react with the material of the device being fabricated. Suitable inert and heavy gases include Ar, Kr, Freon, Xe, CO 2 and WF 6 . N 2 is preferably used as the first gas because it is inert and extremely light. He can also be used as a carrier gas, which shows a new possibility of "heavier" filling gas. For example, N 2 is heavier than He, and when He is a carrier gas, N 2 can be used as a filling gas.

填充氣體可為符合重量標準之單一氣體,或無論其係較載氣之分子量大20%還是100%,其可為各符合重量標準之氣體之混合物。然而,為了簡單起見,較佳地,使用單一氣體,該填充氣體具有其所預期之效應,因為其係由相對載氣較重之分子組成,且無論所有填充氣體分子相同與否,應產生該效應。 The filling gas may be a single gas that meets the weight standard, or whether it is 20% or 100% larger than the molecular weight of the carrier gas, which may be a mixture of gases each meeting the weight standard. However, for the sake of simplicity, it is preferred to use a single gas which has its intended effect because it consists of molecules that are heavier relative to the carrier gas and should be generated regardless of whether all of the filling gas molecules are the same or not. This effect.

大多數實施例中,期望載氣可為單一氣體,較佳為N2。然而,本發明之實施例可利用具有多氣體組分之載氣實施。於該情境下,該載氣之「分子量」應視為莫耳平均分子量。 In most embodiments, the carrier gas is desirably a single gas, preferably N 2 . However, embodiments of the invention may be practiced with a carrier gas having multiple gas components. In this context, the "molecular weight" of the carrier gas should be considered as the molar average molecular weight.

較佳地,於沉積有機物質期間,真空腔室中之總壓力係介於1毫托及1托之間。一般,對於OVJP而言,其為較佳之壓力範圍。同樣地,OVJP(包括利用填充氣體之OVJP)可於高壓及低壓下實施。但是,低於該範圍下限之壓力不佳,因為OVJP根據其性質係於沉積期間將氣體引入腔室內,以致相較於諸如熱蒸鍍之其他方法中之類似真空度,較低之真空度可能需求極其昂貴之真空設備。較高之壓力可輕易地被利用,但一般應移除載氣以致沉積可發生於腔室內達可控平衡之整段時間內,且極容易獲得1托之壓力。Preferably, during deposition of the organic material, the total pressure in the vacuum chamber is between 1 mTorr and 1 Torr. Generally, it is a preferred pressure range for OVJP. Similarly, OVJP (including OVJP using a fill gas) can be implemented at high pressure and low pressure. However, pressures below the lower limit of the range are not good because OVJP is based on its nature to introduce gas into the chamber during deposition, so that a lower vacuum may be compared to a similar vacuum in other methods such as thermal evaporation. Vacuum equipment that is extremely expensive. Higher pressures can be easily utilized, but the carrier gas should generally be removed so that deposition can occur throughout the chamber for a controlled period of time and it is extremely easy to obtain a pressure of 1 Torr.

該腔室較佳為真空腔室。然而,有可於大氣壓或高壓下實施之OVJP之實施例,且填充氣體之使用可應用於其等實施例。The chamber is preferably a vacuum chamber. However, there are embodiments of OVJP that can be implemented at atmospheric pressure or high pressure, and the use of a filling gas can be applied to its embodiments.

量化腔室內填充氣體的量之一種方法係根據流速。於平衡時,期望引入腔室內之不同氣體之相對流速可對應於位於遠離引入氣體之任何孔之位置處之氣體(即腔室內之「周圍」氣體)之分壓。然而,流速之控制及測定遠比分壓來得容易。One method of quantifying the amount of gas filled in a chamber is based on the flow rate. At equilibrium, it is desirable that the relative flow rates of the different gases introduced into the chamber may correspond to the partial pressure of the gas at the location away from any of the holes in the introduced gas (i.e., the "surrounding" gas within the chamber). However, the control and measurement of the flow rate is much easier than the partial pressure.

量化腔室內填充氣體的量之另一種方法係對過度噴射效應之測定。OLED上下文中本發明實施例之一個目標係減小具有不同結構及通常發射不同顏色的光之鄰近裝置中不純分子的量。不純分子於將其視為雜質之裝置中具發射性之情況下,藉由測定該裝置之發射極易量化所含雜質的量。圖5之實驗顯示相對於其中存有填充氣體之情境,適度量之填充氣體可輕易減小雜質的量,但相同的總壓係同樣的(且係藉由存有載氣所致)。一般,適用於OVJP之噴嘴可具有相對於圖3所述之「最小尺寸」。量化填充氣體是否有具有足以具有所期望效應之分壓之一種方法係進行簡單實驗,於相同的總壓力下,將利用填充氣體進行之OVJP與其中僅存有載氣下進行之OVJP作比較。此點可如圖5所述實現。過度噴射之效應可於離圖案化特徵部邊緣一個最小尺寸之處進行測定。相對於在無該第二氣體下所進行之其他相同沉積,在沉積該有機物質期間腔室中該第二氣體之分壓係足以使於離該圖案化特徵部邊緣一個最小尺寸之距離處沉積之有機物質的量減少2倍,可以說該填充氣體具有顯著效應。如圖5所例示,該效應係極易藉由適度量之填充氣體實現。Another method of quantifying the amount of gas filled in a chamber is the determination of the overspray effect. One object of embodiments of the present invention in the context of OLEDs is to reduce the amount of impure molecules in adjacent devices having different structures and generally emitting light of different colors. In the case where an impure molecule is emissive in a device which treats it as an impurity, the amount of impurities contained in the device is easily quantified by measuring the emitter of the device. The experiment of Figure 5 shows that a suitable amount of filler gas can easily reduce the amount of impurities relative to the presence of a fill gas therein, but the same total pressure is the same (and is due to the presence of carrier gas). Generally, nozzles suitable for OVJP can have a "minimum dimension" as described with respect to FIG. A method of quantifying whether the filling gas has a partial pressure sufficient to have a desired effect is a simple experiment in which the OVJP using the filling gas is compared with the OVJP in which only the carrier gas is present at the same total pressure. This can be achieved as described in Figure 5. The effect of overspray can be measured at a minimum size from the edge of the patterned feature. The partial pressure of the second gas in the chamber during deposition of the organic material is sufficient to deposit at a distance from a margin of the patterned feature edge relative to other identical deposits performed without the second gas The amount of organic matter is reduced by a factor of two, and it can be said that the filling gas has a remarkable effect. As illustrated in Figure 5, this effect is easily achieved by a suitable amount of fill gas.

較佳地,OVJP係於相對差的真空度(一般,1毫托至1托)下進行,然而,較高真空度至大氣壓力或更高壓力之實施例係極有可能的。因此,可藉由有機分子於其已經由載氣攜帶通過噴嘴之後觀察到真空腔室內殘餘氣體之可評估之分壓。於該限制範圍內,壓力與載氣流速之一些組合可得到最小量之過度噴射。Preferably, the OVJP is carried out at a relatively low vacuum (typically, 1 mTorr to 1 Torr), however, embodiments with higher vacuum to atmospheric pressure or higher are highly desirable. Thus, the evaluable partial pressure of the residual gas in the vacuum chamber can be observed by the organic molecules after they have been carried through the nozzle by the carrier gas. Within this limit, some combination of pressure and carrier gas flow rate results in a minimum amount of over-injection.

本發明之實施例包括進一步經有意引入沉積腔室內具部分壓力之重於載氣之氣體來減少過度噴射。該較重之氣體可稱為「填充」氣體。該較重之氣體對於離開噴嘴之載氣及有機蒸氣之膨脹之限制係優於載氣。於一特定例示性實例中,載氣為氮氣及腔室係填充有具部分壓力之氬氣。其中腔室包含氬氣之實例中之過度噴射於可測定程度上係少於腔室僅包含經由載氣引入之氮氣之情況下之過度噴射。Embodiments of the invention include further reducing the over-injection by intentionally introducing a portion of the deposition chamber that is heavier than the carrier gas. This heavier gas can be referred to as a "filler" gas. The heavier gas is more restrictive to the carrier gas leaving the nozzle and the expansion of the organic vapor than the carrier gas. In a specific illustrative example, the carrier gas is nitrogen and the chamber is filled with a portion of the pressure of argon. The over-injection in the example where the chamber contains argon is less than measurable to the extent that the chamber contains only nitrogen introduced via the carrier gas.

可存在可不同於僅使用N2之最佳壓力之Ar填充氣之最佳總壓力,且可期望測得該最佳總壓力。可藉由於不同總壓力下進行一系列沉積並測定結果輕易測得最佳總壓力。此點慣常係針對不存有填充氣之規則性OVJP進行,且應為存有填充氣體之OVJP之等同例行。There may be different than the optimum pressure of Ar using only the N 2 gas filling the optimum total pressure, and it may be desirable that the optimum total pressure measured. The optimum total pressure can be easily measured by performing a series of depositions at different total pressures and measuring the results. This is customary for regular OVJPs without a fill gas and should be an equivalent of an OVJP with a fill gas.

若僅考量過度噴射之減少,則期望使用最重之可能填充氣體。然而,於選擇填充氣體中,應考量其他因素,諸如成本,亦應考量毒性及環境效應。填充氣體亦應為惰性,即其不應與有機裝置之任何部分發生不利反應。至於因高分子量而期望用作填充氣之氣體,較佳之選擇包括Kr、諸如CF4、C2F6之複合氣體分子及按由高到低順序之氟利昂、Xe、CO2及WF6。預期相較於僅存有載氣時之相同總壓力,當存有重填充氣體時,可理想地減少過度噴射。然而,預期各填充/載流氣體組合可具有使過度噴射最小化之不同分壓,相對簡單的實驗即可測定該分壓。If only the reduction in over-injection is considered, it is desirable to use the heaviest possible fill gas. However, in the selection of filling gas, other factors, such as cost, should be considered, and toxicity and environmental effects should also be considered. The fill gas should also be inert, ie it should not adversely react with any part of the organic device. As for the gas which is desired to be used as the filling gas due to the high molecular weight, it is preferable to include Kr, a composite gas molecule such as CF 4 , C 2 F 6 and Freon, Xe, CO 2 and WF 6 in descending order. It is expected that the over-injection can be desirably reduced when there is a heavy fill gas compared to the same total pressure when only the carrier gas is present. However, it is contemplated that each of the packed/carrier gas combinations may have a different partial pressure that minimizes over-injection, which can be determined by relatively simple experiments.

使用特種氣體填充OVJP沉積之一個考量極有可能係成本。較佳連續引入新製填充氣體以補償自噴嘴出來之載氣,否者,沉積腔室最終將僅填充有載氣。此點意指可隨時間使用大體積之填充氣體,且應考量成本及/或處置。One consideration for filling OVJP deposits with specialty gases is very likely to be cost. It is preferred to continuously introduce a new fill gas to compensate for the carrier gas exiting the nozzle, otherwise the deposition chamber will eventually be filled with only the carrier gas. This point means that a large volume of fill gas can be used over time and costs and/or disposal should be considered.

本發明之實施例可於多維範圍內實施。宜可於期望用於OVJP系統之任何尺寸下採用重的周圍氣體之應用。Embodiments of the invention can be implemented in a multi-dimensional range. It is desirable to use heavy ambient gas for any size of the OVJP system.

圖4顯示本發明一具體實施例之簡單單噴嘴實施例。圖4顯示系統410及450。系統410包括一具有一OVJP噴嘴422之腔室420、一用於引入填充氣體之孔424及一用於自腔室420移去氣體之孔426。真空系統可連接至孔426。於氣體源自腔室外部之來源之情況下,噴嘴422係抽象地例示為氣體430之噴射流。應明瞭可使用包括用於OVJP之噴嘴之任何多種已知系統。系統410例示存有輕的周圍氣體情況下之較寬噴射擴散。Figure 4 shows a simple single nozzle embodiment of an embodiment of the invention. FIG. 4 shows systems 410 and 450. System 410 includes a chamber 420 having an OVJP nozzle 422, a bore 424 for introducing a fill gas, and a bore 426 for removing gas from chamber 420. A vacuum system can be coupled to the aperture 426. In the case where the gas originates from a source outside the chamber, the nozzle 422 is abstractly illustrated as a jet of gas 430. It should be understood that any of a variety of known systems including nozzles for OVJP can be used. System 410 illustrates a wider spray spread in the presence of a light ambient gas.

系統450包括一具有一OVJP噴嘴462之腔室460、一用於引入填充氣之孔464及一用於自腔室460移去氣體之孔466。真空系統可連接至孔466。於氣體源自腔室外部之來源之情況下,噴嘴462係抽象地例示為引入氣體470之噴射流。應明瞭可使用包括用於OVJP之噴嘴之任何多種已知系統。系統450例示存有重的周圍氣體情況下之較窄噴射擴散。System 450 includes a chamber 460 having an OVJP nozzle 462, a bore 464 for introducing a fill gas, and a bore 466 for removing gas from chamber 460. A vacuum system can be coupled to the aperture 466. In the case where the gas originates from a source outside the chamber, the nozzle 462 is abstractly illustrated as a jet of incoming gas 470. It should be understood that any of a variety of known systems including nozzles for OVJP can be used. System 450 illustrates a narrower jet spread with heavy ambient gas.

噴嘴之一維陣列(即噴嘴線)為噴嘴塊之較佳實施例。此種陣列可藉由相對基板(反之亦然,於與噴嘴線垂直之方向上)移動噴嘴實現高產量圖案化。亦可使用多個噴嘴之其他配置,諸如二維陣列。可使用多種噴嘴形狀。例如,較佳地,依據相對基板平移陣列之方向上之長軸線,該等噴嘴可為長形(例如矩形)。One dimensional array of nozzles (i.e., nozzle lines) is a preferred embodiment of the nozzle block. Such an array can achieve high throughput patterning by moving the nozzles relative to the substrate (and vice versa, in a direction perpendicular to the nozzle lines). Other configurations of multiple nozzles, such as a two-dimensional array, can also be used. A variety of nozzle shapes are available. For example, preferably, the nozzles may be elongated (e.g., rectangular) depending on the long axis in the direction of the substrate translation array.

本發明之實施例一般可聯合用於OVJP或改良OVJP之其他技術實施。例如,本發明之實施例可結合位於引起定域化真空之噴嘴塊中之排放器實施,此等揭示於美國專利申請案第11/643,795號中,該案係以引用的方式併入。Embodiments of the invention may generally be used in conjunction with other technical implementations of OVJP or modified OVJP. For example, embodiments of the present invention can be implemented in conjunction with an ejector in a nozzle block that causes a localized vacuum, as disclosed in U.S. Patent Application Serial No. 11/643,795, the disclosure of which is incorporated herein by reference.

圖5顯示發射比對離沉積邊緣之距離之繪圖,其提供對於沉積期間發生多少過度噴射之量度。不同沉積條件例示重的填充氣體對OVJP沉積之效應,且明確言之,藉由使用重的填充氣體而減少過度噴射。藉由遍及利用具有線間0.5 mm間距之1 mm寬ITO陽極圖案化之6"玻璃基板上進行真空熱沉積(VTE)得到NPD/TPBi雙層裝置。該裝置之電荷注入及傳遞特徵高度不對稱以致所產生之所有激子係緊密受限於NPD/TPBi界面。於不存在污染下,所得裝置顯示自NPD之藍光EL。使用沿著NPD及TPBi之填充型VTE沉積之間之ITO線中之一者之OVJP沉積細紅色摻雜劑線。由於有效激子係傳遞至紅色染料,該沉積線顯示紅色電激發光。於沉積ITO條遠處之紅色染料之任何過度噴射亦可根據沉積於該位置處之紅色染料的量顯示某種程度之紅光發射。電激發光光譜中之波峰因紅色染料及預設NPD發射而係明顯獨立的及紅光及藍光峰值之比係定量地限定所存有之紅色染料的量;該比係採用測試結構之受控VTE沉積進行校準。由於有機異質界面處之激子之有效限制及每況愈下之能量傳遞之高效率,因此,該等結構極易產生過度噴射,已用以偵測<0.25 之材料或約1/10之單層。Figure 5 shows a plot of the emission versus distance from the deposition edge, which provides a measure of how much over-spray occurs during deposition. Different deposition conditions exemplify the effect of heavy fill gas on OVJP deposition and, in particular, reduce over-injection by using heavy fill gas. The NPD/TPBi double layer device was obtained by vacuum thermal deposition (VTE) on a 6" glass substrate patterned with a 1 mm wide ITO anode with a 0.5 mm pitch between the lines. The charge injection and transfer characteristics of the device were highly asymmetric. As a result, all excitons generated are tightly bound to the NPD/TPBi interface. In the absence of contamination, the resulting device exhibits blue light EL from NPD. It is used in the ITO line between the deposited VTE deposits along the NPD and TPBi. One of the OVJP deposits a fine red dopant line. Since the effective exciton is transferred to the red dye, the deposition line shows red electro-excitation light. Any over-spraying of the red dye at the far side of the deposited ITO strip may also be deposited according to The amount of red dye at the position shows a certain degree of red light emission. The peaks in the spectrum of the electro-excitation light are significantly independent due to the red dye and the preset NPD emission, and the ratio of the red and blue peaks is quantitatively defined. The amount of red dye; this ratio is calibrated using controlled VTE deposition of the test structure. Due to the effective limitation of excitons at the organic heterointerface and the high efficiency of energy transfer over time, such The structure is extremely prone to over-spray and has been used to detect <0.25 The material or a single layer of about 1/10.

實驗配置於某種程度上係受限的。示意性地,裝置OVJP部分之製造係於諸如圖4中所例示腔室之腔室中實現。該腔室為真空腔室,但該真空並不具有可變性價值-即:該真空在其中無設定條件下係打開或關閉的。假設該真空係打開的,則腔室內之總壓力係依據載氣及填充氣體之流速進行測定。該腔室具有可測定該腔室內之總壓力之單壓力測定裝置。The experimental configuration is somewhat limited. Illustratively, the fabrication of the device OVJP portion is accomplished in a chamber such as the chamber illustrated in FIG. The chamber is a vacuum chamber, but the vacuum is not of variability - that is, the vacuum is opened or closed without setting conditions therein. Assuming that the vacuum is open, the total pressure in the chamber is measured based on the flow rates of the carrier gas and the fill gas. The chamber has a single pressure measuring device that measures the total pressure within the chamber.

圖5之不同繪圖表示如下:0.1托之N2表示校準操作,以測定將載氣流速設定為特定量情況下之總壓力(0.1托),及進入腔室內之唯一氣體為通過噴嘴之載氣。該繪圖顯示過度噴射較少,因為總壓力較小,然並不類似於用以達測定周圍氣體是否係與載氣相同或包括較重填充氣體之效應之目的之其他繪圖。對於N2為0.3托之兩個繪圖,Ar填充係相同的實驗,其中N2載氣之流速係與0.1托之N2之流速相同,但Ar氣同樣係經由遠離噴嘴之孔進入腔室內。Ar之流速足以達到為0.3托之總壓力。對於N2為0.3托之兩個繪圖,N2填充為相同的實驗,其係以與Ar填充實驗相同的方法進行,除了經由遠離噴嘴之孔使N2氣代替Ar氣進入腔室內以達到高達0.3托之總壓力之外。數據顯示於相同壓力下,相較於使用預設N2填充,使用0.3托之Ar填充使得過度噴射較少。The different plots of Figure 5 are as follows: 0.1 Torr N 2 represents the calibration operation to determine the total pressure (0.1 Torr) for setting the carrier gas flow rate to a specific amount, and the only gas entering the chamber is the carrier gas passing through the nozzle. . This plot shows that there is less over-spray because the total pressure is less, but is not similar to other plots for the purpose of determining whether the surrounding gas is the same as the carrier gas or including the effect of a heavier fill gas. For the two plots where N 2 is 0.3 Torr, the Ar fill is the same experiment in which the flow rate of the N 2 carrier gas is the same as the flow rate of 0.1 Torr of N 2 , but the Ar gas also enters the chamber via a hole away from the nozzle. The flow rate of Ar is sufficient to achieve a total pressure of 0.3 Torr. For the two plots where N 2 is 0.3 Torr, the N 2 fill is the same experiment, which is performed in the same manner as the Ar fill experiment, except that N 2 gas is introduced into the chamber instead of Ar gas via a hole away from the nozzle. Outside the total pressure of 0.3 Torr. Data show that at the same pressure, as compared to using a preset filling N 2, Ar 0.3 torr of less filled so that excessive injection.

圖5所示之最少量之過度噴射係適用於不存在填充氣體之校準操作。於填充氣體下之兩種結果顯示相較於使用該預設N2填充之於0.1托下之沉積,過度噴射更多。然而,由於實驗性儀器之受限性質,0.1托為流動通過噴嘴及任何填充氣體增加壓力之最小可實現壓力,因此可利用該受限儀器測試於0.1托總壓力下之Ar填充。相較於0.3托之N2(Ar填充),相關之對照為0.3托之N2(N2填充),此點顯示於相同壓力下,相對於較輕之周圍氣體,較重之周圍氣體(或更確切地說,因重氣體產生至少明顯分壓情況下之周圍氣體)使得過度噴射減少。即使於經由遠離噴嘴之孔引入腔室內而存有重氣體之情況下,此點亦準確。The minimum amount of overspray shown in Figure 5 is suitable for calibration operations in the absence of fill gas. The filling gas to both the results are shown compared to the use of the predetermined N 2 filled in the deposition under the 0.1 Torr, more excessive injection. However, due to the limited nature of the experimental instrument, 0.1 Torr is the minimum achievable pressure to increase the pressure through the nozzle and any fill gas, so the limited instrument can be used to test the Ar fill at a total pressure of 0.1 Torr. Compared to 0.3 Torr of N 2 (Ar-filled), the relevant control is 0.3 Torr of N 2 (N 2 filled), which is shown at the same pressure, with respect to the lighter ambient gas, heavier ambient gas ( Or, moreover, the excess gas is reduced due to the generation of at least a significant partial pressure of the gas by the heavy gas. This is true even in the case where heavy gas is present in the chamber through a hole remote from the nozzle.

應明瞭文中所述之不同實施例僅僅係根據實例之方式,然用意不在限制本發明之範圍。例如,文中所述材料及結構之許多可在不脫離本發明之精神下由其他物質及結構代替。因此,如熟習此項相關技術者所明瞭,所主張之本發明可包括文中所述特定實例及較佳實施例之變化。應明瞭對於本發明為何操作之不同理論之用意不在於限制。It should be understood that the various embodiments described herein are by way of example only, and are not intended to limit the scope of the invention. For example, many of the materials and structures described herein may be substituted by other materials and structures without departing from the spirit of the invention. Thus, the invention as claimed may include variations of the specific examples and preferred embodiments described herein. It should be understood that the different theories of the operation of the invention are not intended to be limiting.

100...有機發光裝置100. . . Organic light emitting device

110...基板110. . . Substrate

115...陽極115. . . anode

120...電洞注入層120. . . Hole injection layer

125...電洞傳遞層125. . . Hole transfer layer

130...電子阻擋層130. . . Electronic barrier

135...發射層135. . . Emissive layer

140...電洞阻擋層140. . . Hole barrier

145...電子傳遞層145. . . Electron transfer layer

150...電子注入層150. . . Electron injection layer

155...保護層155. . . The protective layer

160...陰極160. . . cathode

162...第一傳導層162. . . First conductive layer

164...第二傳導層164. . . Second conductive layer

200...反向OLED200. . . Reverse OLED

210...基板210. . . Substrate

215...陰極215. . . cathode

220...發射層220. . . Emissive layer

225...電洞傳遞層225. . . Hole transfer layer

230...陽極230. . . anode

310...孔310. . . hole

320...孔320. . . hole

330...孔330. . . hole

340...孔340. . . hole

410...系統410. . . system

420...腔室420. . . Chamber

422...噴嘴422. . . nozzle

424...孔424. . . hole

426...孔426. . . hole

430...氣體430. . . gas

450...系統450. . . system

460...腔室460. . . Chamber

462...噴嘴462. . . nozzle

464...孔464. . . hole

466...孔466. . . hole

470...氣體470. . . gas

圖1顯示有機發光裝置。Figure 1 shows an organic light emitting device.

圖2顯示不具有不同電子傳遞層之反向有機發光裝置。Figure 2 shows a reverse organic light-emitting device without different electron-transport layers.

圖3顯示於與氣流垂直之方向上截取之4種不同噴嘴幾何結構之橫截面。Figure 3 shows a cross section of four different nozzle geometries taken in a direction perpendicular to the gas flow.

圖4顯示2個欲進行物質沉積之腔室,一者具有輕的周圍氣體及另一者具有重的周圍氣體。Figure 4 shows two chambers for material deposition, one with light ambient gas and the other with heavy ambient gas.

圖5顯示發射比對離沉積邊緣之距離之繪圖,其提供針對沉積期間發生多少過度噴射之量度。Figure 5 shows a plot of the emission versus distance from the deposition edge, which provides a measure of how much overspray occurs during deposition.

410...系統410. . . system

420...腔室420. . . Chamber

422...噴嘴422. . . nozzle

424...孔424. . . hole

426...孔426. . . hole

430...氣體430. . . gas

450...系統450. . . system

460...腔室460. . . Chamber

462...噴嘴462. . . nozzle

464...孔464. . . hole

466...孔466. . . hole

470...氣體470. . . gas

Claims (12)

一種有機蒸氣噴射印刷之方法,其包括:提供其內置有基板之腔室;經自導向於該基板之噴嘴噴射:第一氣體;及由該第一氣體攜帶之有機物質之蒸氣,使有機物質沈積於該基板上;於沉積有機物質期間,於該腔室中提供第二氣體;其中該第二氣體之流速為流入該真空腔室內之所有氣體之流速總和之至少5%;該第二氣體具有較該第一氣體之分子量大至少20%之分子量;及該第二氣體係經遠離該噴嘴之孔提供於該腔室中。 A method for organic vapor jet printing, comprising: providing a chamber having a built-in substrate; spraying through a nozzle guided to the substrate: a first gas; and a vapor of an organic substance carried by the first gas to cause an organic substance Depositing on the substrate; providing a second gas in the chamber during deposition of the organic substance; wherein the flow rate of the second gas is at least 5% of a total flow rate of all gases flowing into the vacuum chamber; the second gas Having a molecular weight that is at least 20% greater than the molecular weight of the first gas; and the second gas system is provided in the chamber through a hole remote from the nozzle. 如請求項1之方法,其中該第二氣體之流速為流入該真空腔室內之所有氣體之流速總和之至少30%。 The method of claim 1, wherein the flow rate of the second gas is at least 30% of a sum of flow rates of all gases flowing into the vacuum chamber. 如請求項1之方法,其中該第二氣體之流速為流入該真空腔室內之所有氣體之流速總和之至少60%。 The method of claim 1, wherein the flow rate of the second gas is at least 60% of a sum of flow rates of all gases flowing into the vacuum chamber. 如請求項1之方法,其中,於沉積有機物質期間,該真空腔室中之總壓力係介於1毫托至1托之間。 The method of claim 1, wherein the total pressure in the vacuum chamber is between 1 mTorr and 1 Torr during the deposition of the organic material. 如請求項1之方法,其中該第一氣體為N2The method of claim 1, wherein the first gas is N 2 . 如請求項1之方法,其中該第二氣體係選自由Ar、Kr、氟利昂(freons)、Xe、CO2及WF6組成之群。 The method of claim 1, wherein the second gas system is selected from the group consisting of Ar, Kr, freons, Xe, CO 2 and WF 6 . 如請求項1之方法,其中該第二氣體為單一物質。 The method of claim 1, wherein the second gas is a single substance. 如請求項1之方法,其中該第二氣體具有較該第一氣體 之分子量大至少100%之分子量。 The method of claim 1, wherein the second gas has a first gas The molecular weight is at least 100% greater than the molecular weight. 如請求項1之方法,其中該第二氣體為各具有較該第一氣體之分子量大至少20%之分子量之物質之混合物。 The method of claim 1, wherein the second gas is a mixture of materials each having a molecular weight greater than 20% greater than the molecular weight of the first gas. 如請求項1之方法,其中該第二氣體為各具有較該第一氣體之分子量大至少100%之分子量之物質之混合物。 The method of claim 1, wherein the second gas is a mixture of materials each having a molecular weight greater than 100% greater than the molecular weight of the first gas. 如請求項1之方法,其中該腔室為真空腔室。 The method of claim 1, wherein the chamber is a vacuum chamber. 一種有機蒸氣噴射印刷之方法,其包括:提供其內置有基板之腔室;經自導向於該基板之噴嘴噴射:第一氣體;及由該第一氣體攜帶之有機物質之蒸氣,使有機物質沉積於該基板上;於沉積有機物質期間,於該腔室中提供第二氣體;其中該第二氣體具有較該第一氣體之分子量大至少20%之分子量;該噴嘴具有具最小尺寸之孔;該有機物質係沉積於該基板上成為具有由該孔之形狀界定之形狀之圖案化特徵部;相對於在無該第二氣體下所進行之其他相同沉積,在沉積該有機物質期間腔室中該第二氣體之分壓係足以使於離該圖案化特徵部邊緣一個最小尺寸之距離處沉積之有機物質的量減少2倍。 A method for organic vapor jet printing, comprising: providing a chamber having a built-in substrate; spraying through a nozzle guided to the substrate: a first gas; and a vapor of an organic substance carried by the first gas to cause an organic substance Depositing on the substrate; providing a second gas in the chamber during deposition of the organic substance; wherein the second gas has a molecular weight that is at least 20% greater than a molecular weight of the first gas; the nozzle has a hole having a minimum size The organic material is deposited on the substrate as a patterned feature having a shape defined by the shape of the hole; the chamber is deposited during deposition of the organic substance relative to other identical depositions performed without the second gas The partial pressure of the second gas is sufficient to reduce the amount of organic material deposited at a distance from a minimum dimension of the edge of the patterned feature by a factor of two.
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