TW201212105A - Organic vapor jet printing with a blanket gas - Google Patents

Organic vapor jet printing with a blanket gas Download PDF

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TW201212105A
TW201212105A TW100126051A TW100126051A TW201212105A TW 201212105 A TW201212105 A TW 201212105A TW 100126051 A TW100126051 A TW 100126051A TW 100126051 A TW100126051 A TW 100126051A TW 201212105 A TW201212105 A TW 201212105A
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gas
chamber
substrate
nozzle
molecular weight
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TW100126051A
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Chinese (zh)
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TWI555057B (en
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Paul E Burrows
Mohan Siddharth Harikrishna
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Universal Display Corp
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228Gas flow assisted PVD deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A method of depositing organic material is provided. A chamber is provided having a substrate disposed therein. An organic material is deposited over the substrate by ejecting from a nozzle directed at the substrate: a first gas; and a vapor of the organic material carried by the first gas. During the depositing an organic material, a second gas is provided in the chamber. The flow rate of the second gas is at least 5% of the sum of the flow rates of all gases flowing into the vacuum chamber. The second gas has a molecular weight at least 20% greater than the molecular weight of the first gas. The second gas is provided in the chamber via an aperture remote from the nozzle.

Description

201212105 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種有機蒸氣喷射印刷(OVJP)。 所主張的發明係以下方中之一或多者為代表及/或係聯 合下方中之一或多者達成聯合大學公司研究協議製作:密 歇根州大學董事會、普林斯頓大學董事會、南加州大學董 事會及Universal Display Corporati〇n。該協議係有效於製 作所主張的發明當天及之前,及所主張的發明係因於該協 議之範圍内所實施之活動而製作的。 【先前技術】 就眾多原因而言,使用有機物質之光電裝置變得漸為所 需。用以製造該等裝置之許多物質相對較廉價,因此,有 機光電裝置具有優於無機裝置之成本優點。另外,有機物 質之固有性質(諸如其可撓性)可使其良好地適用於諸如與 可撓性基板有關之製造之特定應用。有機光電裝置之實例 包括有機發光裝置(〇LED)、有機光電晶體、有機光伏打 電池及有機光偵測器。對於〇LED,有機物質具有優於習 2物質之性能優點。例如,有機發光層發光之波長一般可 藉由適宜之摻雜劑輕易調諧。 OLED係利用當對該裝置施加電壓時可發出光之薄有機 缚膜。就於諸如平面顯示器、照明及背光之應用中之用 途’ OLED成為越來越令人感興趣之技術。若干種〇led物 質及組態述於美國專利案第5,844,363、6,303,238及 5,7〇7,745號中,其全文係以引用的方式併入本文中。 J57726.doc 201212105 沉積OLED及其他有機裝置之一種方法為有機蒸氣嘴射 印刷(OVJP)。OVJP之一般原理已述於2008年7月29日頒予 之美國專利案第7,404,862號、2010年6月29日頒予之美國 專利7,744,957、2008年10月7曰頒予之美國專利案第 7,4;31,968號、2〇1〇年5月25曰頒予之美國專利案第 7,722,927號及2〇〇8年2月21日申請之美國專利申請案第 12/034,683號中,該等案均應以引用的方式併入本文中。 文中所用術語「有機」包括可用以製造有機光電裝置之 聚合材料及小分子有機材料。「小分子」係指為非聚合物 之任何有機材料,及「小分子」實際上可為相當大。於一 些情況下,小分子等可包含重複單元。例如,制長鍵炫 基作為取代基係無法自豸「小分子」類別移去分子。小分 子等亦可併人聚合物中(例如)作為聚合物主鏈上之侧義或 作為該主鏈之—部分”】、分子等亦可充當樹枝狀聚合i之 核部分,其係由建立於該核部分上之—系列化學殼组成。 樹枝狀聚合物之核部分可為螢光或磷光小分子發射體 枝狀聚合物可為「小分子」’且吾等認為目前用於OLED領 域中之所有樹枝狀聚合物為小分子。 文中所用「頂部」意指離基板最遠之處,而「底部」音 指離基板最近之處。於第一層係描述$「位於」第二層: 寺=第層係位於離基板較遠之處。除非指明第—層係 i第“:接觸」,否則’第一及第二層之間可存有其他 曰。7 ’即使其間有多層有機層,陰極亦可描述為「位 於」陽極上。 157726.doc 201212105 更多OLED相關細節及上述定義可參見美國專利案第 7,279,704號,其全文係以引用的方式併入本文中。 【發明内容】 本發明提供一種沉積有機物質之方法。提供其内置有基 板之腔至。有機物質係經自導向於該基板之喷嘴噴射:第 —氣體;及由該第一氣體攜帶之有機物質之蒸氣而沉積於 該基板上。於沉積有機物質期間,將第二氣體提供於該腔 至中。5亥第二氣體之流速為流入真空腔室内之所有氣體之 流速總和之至少5 %。該第二氣體具有較該第一氣體之分 子1大至少20%之分子量。該第二氣體係經遠離該喷嘴之 孔提供於該腔室中。 較佳地,該第二氣體之流速為流入真空腔室内之所有氣 體之流速總和之至少30%。更佳地,該第二氣體之流速為 流入真空腔室内之所有氣體之流速總和之至少6〇0/。。 較佳地,於沉積有機物質期間,該真空腔室中之總壓力 係介於1毫托至1托之間。 该第一氣體較佳為N2。該第二氣體較佳係選自由Ar、 Kr、氟利昂、xe、C〇2及WF6組成之群。 該第二氣體可為單一物質。該第二氣體可為各具有較該 第一氣體之分子量大至少20%之分子量之不同氣體之混合 物。 該第二氣體較佳具有較該第一氣體之分子量大至少 100%之分子量。該第二氣體可為各具有較該第一氣體之 分子量大至少100%之分子量之物質之混合物。201212105 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to an organic vapor jet printing (OVJP). The claimed invention is one or more of the following: and/or one or more of the following parties to reach a joint university company research agreement: Michigan State University Board of Directors, Princeton University Board of Directors, University of Southern California Board of Directors and Universal Display Corporati〇n. The agreement is effective on the day before and after the invention was made, and the claimed invention was made for the activities carried out within the scope of the agreement. [Prior Art] For a large number of reasons, photovoltaic devices using organic substances have become increasingly desirable. Many of the materials used to make such devices are relatively inexpensive, and therefore, organic optoelectronic devices have the cost advantage over inorganic devices. In addition, the inherent properties of organic materials, such as their flexibility, make them well suited for particular applications such as manufacturing associated with flexible substrates. Examples of organic optoelectronic devices include organic light-emitting devices (〇LEDs), organic optoelectronic crystals, organic photovoltaic cells, and organic photodetectors. For germanium LEDs, organic materials have performance advantages over those of the conventional materials. For example, the wavelength at which the organic light-emitting layer emits light can generally be easily tuned by a suitable dopant. OLEDs utilize a thin organic film that emits light when a voltage is applied to the device. For applications such as flat panel displays, lighting and backlighting, OLEDs are becoming an increasingly interesting technology. </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; J57726.doc 201212105 One method of depositing OLEDs and other organic devices is organic vapor nozzle printing (OVJP). The general principles of OVJP are described in U.S. Patent No. 7,404,862, issued July 29, 2008, U.S. Patent 7,744,957, issued on Jun. 29, 2010, and U.S. Patent No. 7, issued on October 7, 2008. , U.S. Patent No. 7,722,927 issued May 25, 2010, and U.S. Patent Application Serial No. 12/034,683, filed on Feb. 21, 2008. Such cases should be incorporated herein by reference. The term "organic" as used herein includes polymeric materials and small molecular organic materials that can be used to make organic optoelectronic devices. "Small molecule" means any organic material that is not a polymer, and "small molecules" can actually be quite large. In some cases, small molecules or the like may contain repeating units. For example, the long bond stimuli as a substituent system cannot remove molecules from the "small molecule" category. A small molecule or the like may also be used as a core portion of a dendrimer polymerization i, for example, as a side of a polymer backbone or as a part of the main chain. On the core part - a series of chemical shells. The core part of the dendrimer can be a fluorescent or phosphorescent small molecule emitter. The dendrimer can be a "small molecule" and we believe that it is currently used in the field of OLEDs. All dendrimers are small molecules. As used herein, "top" means the farthest from the substrate, and "bottom" refers to the closest to the substrate. The first layer describes the second layer of "located": Temple = the first layer is located far from the substrate. Unless the first layer is specified as ": contact", there may be other defects between the first and second layers. 7 ' Even if there are multiple layers of organic layers in between, the cathode can be described as being "on" the anode. 157726.doc 201212105 More OLED-related details and the above definitions can be found in U.S. Patent No. 7,279,704, the disclosure of which is incorporated herein by reference. SUMMARY OF THE INVENTION The present invention provides a method of depositing an organic substance. Provide a cavity with a built-in substrate to. The organic substance is sprayed through a nozzle directed to the substrate: a first gas; and a vapor of an organic substance carried by the first gas is deposited on the substrate. A second gas is supplied to the chamber during deposition of the organic material. The flow rate of the second gas of 5 hai is at least 5% of the sum of the flow rates of all the gases flowing into the vacuum chamber. The second gas has a molecular weight that is at least 20% greater than the molecular weight 1 of the first gas. The second gas system is provided in the chamber through a hole remote from the nozzle. Preferably, the flow rate of the second gas is at least 30% of the sum of the flow rates of all gases flowing into the vacuum chamber. More preferably, the flow rate of the second gas is at least 6 〇 0 / of the sum of the flow rates of all gases flowing into the vacuum chamber. . Preferably, the total pressure in the vacuum chamber is between 1 mTorr and 1 Torr during the deposition of the organic material. The first gas is preferably N2. Preferably, the second gas is selected from the group consisting of Ar, Kr, Freon, xe, C〇2, and WF6. The second gas can be a single substance. The second gas may be a mixture of different gases each having a molecular weight that is at least 20% greater than the molecular weight of the first gas. Preferably, the second gas has a molecular weight that is at least 100% greater than the molecular weight of the first gas. The second gas may be a mixture of materials each having a molecular weight greater than 100% greater than the molecular weight of the first gas.

S 157726.doc . 201212105 S亥腔室可為真空腔室β 本發明提供一種沉積有機物質之方法。提供其内置有基 板之腔室。有機物質係經自導向於該基板之喷嘴噴射:第 一氣體;及由該第一氣體攜帶之有機物質之蒸氣沉積於該 基板上。於沉積有機物質期間,將第二氣體提供該腔室 中。該第二氣體具有較該第一氣體之分子量大至少20%之 分子量°該第二氣體係經遠離該喷嘴之孔提供於該腔室 中。该嘴嘴具有具有最小尺寸之孔。該有機物質係沉積於 5亥基板上成為具有由該孔之形狀界定之形狀之圖案化特徵 部。相對於在無該第二氣體下所進行之其他相同沉積,在 &gt;儿積該有機物質期間腔室中該第二氣體之分壓係足以使離 該圖案化特徵部邊緣一個最小尺寸距離處沉積之有機物質 的量減小2倍。 【實施方式】 一般’ OLED包括至少一層位於陽極及陰極之間且電連 接至陽極及陰極之有機層。當施加電流時,陽極注入電洞 及陰極注入電子於該(等)有機層中。所注入之電洞及電子 各朝著經帶相反電荷之電極遷移。當電子及電洞定域於同 一分子上時’形成為具有激發能態之定域化電子—電洞對 之「激子」。當激子依據光發射機制產生弛豫時即發光。 在一些實例中’激子可定域於激元或激發複合物上。亦可 呈現諸如熱弛豫之非輻射機制,然一般係視為非所要的。 圖1顯示一有機發光裝置100。該等圖不一定係按比例繪 製。裝置100包括一基板u〇、一陽極115、一電洞注入層 157726.doc 201212105 、一電洞傳遞層125、一電子阻擋層13〇、一發射層 135、一電洞阻擋層14〇、一電子傳遞層145、一電子注入 層150、一保護層155及一陰極16〇。陰極16〇為具有一第一 傳導層162及一第二傳導層164之複合陰極。可藉由依次沉 積所述該等層而製得裝置100。該等不同層之性質及功能 以及實例材料更詳細地述於US 7,279,704之第6至1〇攔中’ 該案係以引用的方式併入。 可k供該等層各者之更多實例》例如,可撓性及透明基 板-陽極組合揭示於美國專利案第5,844,363號中,其全文 係以引用的方式併入。p_摻雜型電洞傳遞層之一實例為如 美國專利申請公開案第2003/0230980號所揭示之以50 : 1 之莫耳比摻雜F取代4-TCNQ之m-MTDATA,該專利案全文 係以引用的方式併入。發射及主體材料之實例揭示於S 157726.doc . 201212105 S-chamber can be vacuum chamber β The present invention provides a method of depositing organic matter. Provide a chamber with a built-in substrate. The organic substance is ejected through a nozzle directed to the substrate: a first gas; and a vapor of an organic substance carried by the first gas is deposited on the substrate. A second gas is supplied to the chamber during deposition of the organic material. The second gas has a molecular weight that is at least 20% greater than the molecular weight of the first gas. The second gas system is provided in the chamber through a hole remote from the nozzle. The mouth has a hole of the smallest size. The organic material is deposited on a 5 liter substrate to form a patterned feature having a shape defined by the shape of the hole. Relative to the other identical deposition performed without the second gas, the partial pressure of the second gas in the chamber during the accumulation of the organic material is sufficient to provide a minimum size distance from the edge of the patterned feature The amount of organic matter deposited is reduced by a factor of two. [Embodiment] A general 'OLED' includes at least one organic layer between an anode and a cathode and electrically connected to an anode and a cathode. When a current is applied, the anode is injected into the cavity and the cathode injects electrons into the (or other) organic layer. The injected holes and electrons each migrate toward the oppositely charged electrode. When electrons and holes are localized on the same molecule, they are formed as "excitons" of localized electron-hole pairs with excited states. When an exciton generates relaxation according to a light emission mechanism, it emits light. In some instances, an exciton can be localized to a exciton or an excitation complex. Non-radiative mechanisms such as thermal relaxation may also be present, but are generally considered undesirable. FIG. 1 shows an organic light emitting device 100. These figures are not necessarily drawn to scale. The device 100 includes a substrate u, an anode 115, a hole injection layer 157726.doc 201212105, a hole transfer layer 125, an electron blocking layer 13A, an emission layer 135, a hole barrier layer 14 The electron transport layer 145, an electron injection layer 150, a protective layer 155, and a cathode 16A. The cathode 16 is a composite cathode having a first conductive layer 162 and a second conductive layer 164. Apparatus 100 can be made by sequentially depositing the layers. The nature and function of the various layers and the example materials are described in more detail in US Pat. No. 6,279,704, the disclosure of which is incorporated herein by reference. Further examples of the various layers can be used. For example, a flexible and transparent substrate-anode combination is disclosed in U.S. Patent No. 5,844,363, the disclosure of which is incorporated herein in its entirety by reference. An example of a p-doped type of hole-transporting layer is m-MTDATA in which a 50:1 molar ratio doping F is substituted for 4-TCNQ as disclosed in US Patent Application Publication No. 2003/0230980, the patent application. The full text is incorporated by reference. Examples of emissions and host materials are disclosed in

Thompson等人之美國專利案第6,303,238號中,其全文係 以引用的方式併入。η-摻雜型電子傳遞層之一實例為如美 國專利申請公開案第2003/0230980號所揭示之以1 : 1之莫 耳比摻雜Li之BPhen,其全文係以引用的方式併入。全文 以引用方式併入之美國專利案第5,703,436及5,707,745號揭 示陰極之實例,其包括具有金屬(諸如Mg : Ag)之薄層與上 伏透明導電濺射沉積型ITO層之複合陰極。阻擋層之理論 及用途更詳細地述於美國專利案第6,097,147號及美國專利 申請公開案第2003/0230980號中,其全文係以引用的方式 併入。注入層之實例提供於美國專利申請公開案第 2004/0 174116號中,其全文係以引用的方式併入。保護層 c 157726.doc 201212105 之描述可參見美國專利申請公開案第2〇〇4/〇174116號,其 全文係以引用的方式併入。 圖2顯示一反向0LED 2〇〇。該裝置包括一基板21〇、一 陰極215、一發射層22〇、一電洞傳遞層及一陽極。 裝= 200可藉由依次沉積所述之該等層而製造。由於大多 數吊用OLED組痗具有位於該陽極上之陰極,而裝置雇具 有位於陽極230下方之陰極215,故裝置2〇〇可稱為「反 向」OLED。可將類似於針對裝置i⑽所描述之彼等之材料 用於震置200之對應層中。圖2提供可如何自裝置_之結 構省去一些層之一實例。 圖1及2中所例示之簡單層狀結構係以非限制性實例之方 式=供,及應明瞭本發明之實施例可用於多種其他結構。 所描述之特定材料及結構實際上係例示性,及可使用其他 材料及結構。功能性〇LED可藉由以不同方式組合所述之 不同層而传到,或可基於設言十、性能及成本因素完全省去 層、。亦可包括未明確描述之其他層。可使用除已特定描述 人„卜之材料。雖然文中提供之許多實例描述不同層係包 、單材料’但應明瞭可使用諸如主體與摻雜劑之混合物 或更-般言之為混合物之材料之組合。再者,料層可且 ^不同子層。文中不同層之名稱之用意不在於進行嚴格限 ♦、例如’在中’電洞傳遞層225傳遞電洞及注入 同於毛射層22G t,且可描述為電洞傳遞層或電洞注入 層。於一實施例中’〇LED可描述為具有位於陰極與陽極 門之有機層」。如(例如)針對圖][及2所述,該有機層可 157726.doc 201212105 包括單層或可進一步包括一不同有機材料之多層。 亦可使用未明確描述之結構及材料,諸如揭示於全文以 引用的方式併入之Friend等人之美國專利案第5 247 19〇號 中之包含聚合材料之oled(pled)。舉例另一實例,可使 用具有單個有機層之OLED。0LED可(例如)如全文係以引 用的方式併入之Forrest等人之美國專利案第5,7〇7,745號中 所述進行堆疊。0LED結構可偏離於圖丨及2中所例示之簡 单層狀結構。例如,該結構可包括改良外部偶合之傾斜反 射表面(諸如述於Forrest等人之美國專利案第6,〇91,195號 中之台面結構)及/或述於Bul〇vic等人之美國專利案第 5,834,893號中之孔結構,該等專利案之全文係以引用的方 式併入。 除非另外指明’㈣’不时施例之任何層可藉由任何 適宜方法進行沉積。對於有機層,較佳之方法包括諸如述 於全文係以引用的方式併入之美國專利案第6,〇13,撕及 6,〇87,196號令之熱蒸鐘、喷墨、諸如述於全文係以弓|用的 方式併人U_st等人之美國專利案第6,337,1〇2號中之有 機氣相沉積(QVPD)及諸如述於全文係以引料方式併入 之美國專利申請案序號第1〇/233,47〇號中之經有機甚氣喷 射印刷(OWP)沉積。其他適宜之沉積法包括旋塗法及其他 基於溶液之方法。基於溶液之方法較佳係於氮氣或情性氛 圍中進行。對於其他層,較佳之方法包括熱蒸鍍。較佳^ 圖案化方法包括、料述於全文係以5丨㈣方式併入之美 國專利案第6,294,398及6,468,819號中之透過遮罩沉積、^The entire disclosure of U.S. Patent No. 6,303,238 to T.S. An example of an η-doped electron-transporting layer is BPhen, which is doped with Li in a molar ratio of 1:1 as disclosed in U.S. Patent Application Publication No. 2003/0230980, the entire disclosure of which is incorporated herein by reference. An example of a cathode comprising a composite cathode having a thin layer of a metal such as Mg: Ag and an overlying transparent conductive sputter-deposited ITO layer is disclosed in U.S. Patent Nos. 5,703,436 and 5,707,745, each incorporated by reference. The theory and use of the barrier layer is described in more detail in U.S. Patent No. 6,097,147, and U.S. Patent Application Publication No. 2003/0230980, the entire disclosure of which is incorporated herein by reference. An example of an injection layer is provided in U.S. Patent Application Publication No. 2004/0174, the entire disclosure of which is incorporated herein by reference. A description of the protective layer c 157726.doc 201212105 can be found in U.S. Patent Application Publication No. 2/4,174,116, the entire disclosure of which is incorporated herein by reference. Figure 2 shows a reverse 0LED 2〇〇. The apparatus includes a substrate 21, a cathode 215, an emissive layer 22, a hole transport layer, and an anode. Mounting = 200 can be made by sequentially depositing the layers described. Since most of the hanging OLED groups have a cathode on the anode and the device employs a cathode 215 located below the anode 230, the device 2 can be referred to as a "reverse" OLED. Materials similar to those described for device i (10) can be used in the corresponding layer of the shock 200. Figure 2 provides an example of how some layers can be omitted from the structure of the device. The simple layered structure illustrated in Figures 1 and 2 is by way of non-limiting example, and it should be understood that embodiments of the invention may be utilized in a variety of other configurations. The particular materials and structures described are exemplary in nature and other materials and structures may be used. The functional 〇 LEDs can be passed by combining the different layers in different ways, or the layers can be completely omitted based on the tenth, performance and cost factors. Other layers not explicitly described may also be included. Materials other than those already described may be used. Although many examples are provided to describe different layer packages, single materials, it should be understood that materials such as a mixture of a host and a dopant or, more generally, a mixture may be used. In addition, the material layer can have different sub-layers. The names of the different layers in the text are not intended to be strictly limited, for example, 'in the middle hole hole transfer layer 225, the hole is transferred and the same as the hair layer 22G. t, and can be described as a hole transfer layer or a hole injection layer. In one embodiment, the '〇 LED can be described as having an organic layer at the cathode and the anode gate. The organic layer may comprise a single layer or may further comprise a plurality of layers of different organic materials, as described, for example, in Figures [and 2]. Structures and materials that are not specifically described may also be used, such as oled (pled) comprising a polymeric material as disclosed in U.S. Patent No. 5,247, s. By way of another example, an OLED having a single organic layer can be used. The 0 LEDs can be stacked, for example, as described in U.S. Patent No. 5,7,7,745, the entire disclosure of which is incorporated herein by reference. The 0 LED structure can deviate from the simple layered structure illustrated in Figures 2 and 2. For example, the structure may include an improved externally coupled inclined reflective surface (such as the mesa structure described in U.S. Patent No. 6, s. 91,195 to Forrest et al.) and/or a U.S. patent to Bul〇vic et al. The pore structure of the case No. 5,834,893, the entire contents of which are hereby incorporated by reference. Any layer of the embodiment may be deposited by any suitable method unless otherwise indicated. For organic layers, preferred methods include hot steaming, ink jetting, such as those described in the U.S. Patent No. 6, 〇 13, tor. 6, 〇 87, 196, incorporated herein by reference in its entirety. U.S. Patent No. 6,337,1, 2, U.S. Patent No. 6,337, the disclosure of which is incorporated herein by reference. Organic air jet printing (OWP) deposition in 1〇/233,47 〇. Other suitable deposition methods include spin coating and other solution based methods. The solution based method is preferably carried out in a nitrogen atmosphere or in an emotional atmosphere. For other layers, preferred methods include thermal evaporation. Preferably, the method of patterning includes, by way of text, the mask deposition, ^ in the U.S. Patent Nos. 6,294,398 and 6,468,819, which are incorporated by reference.

S J57726.doc 201212105 焊接及與諸如喷墨及OVJP之一些沉積法相關之圖案化。 亦可採用其他方法。待沉積之材料可經改質以使得其等可 與特定沉積法相容。例如,可將諸如支鏈或非支鏈且較佳 包含至少3個碳之烷基及芳基之取代基用於小分子中,以 增強其經歷溶液處理之能力。可使用具有2〇個碳或更多個 碳之取代基,及3至20個碳為較佳之範圍》具有不對稱結 構之材料可具有較具有對稱結構之彼等更好的溶液可處理 性,因為非對稱材料可具有較低的再結晶傾向性。樹枝狀 ♦合物取代基可用以增強小分子經歷溶液處理之能力。 根據本發明實施例製造之裝置可併入多種消費性產品, 包括平板顯示器、電腦監視器、電視機、廣告牌、用於室 内或室外照明及/或訊號傳導之燈、抬頭顯示器、全透明 顯不器、可撓性顯示器、雷射印表機、電話、行動電話、 個人數位助理(pDA)、膝上型電腦、數位相機、攝錄放影 機取景器、微顯不器、車輛、大面積壁、劇場或露天運 動場屏或訊號傳導器。包括被動型矩陣及主動型矩陣之多 種控制機構可用以㈣根據本發明製造之裝置。該等裝置 中。之許多係計晝用於令人類舒適之溫度範圍(諸如1代至 30C,及更佳室溫(2〇i25C&gt;c))e 文中所述之材料、結構及方法可具有於除了 〇㈣之外 之裝置中之應用。例如,其他諸如有機太陽能電池及有機 光摘測器之光電裝置可利用該等材料、結構及方法。更— 般地’例如有機電晶體之有機裝置可利用該等材料及結 157726.doc 201212105 許多情況下,有機蒸氣喷射印刷(OVJP)為一種沉積有機 物質之理想方法。在不採用以不希望沉積至其上之基板阻 擋或遞蓋部分為基之遮罩、光阻劑或類似圖案化技術下, OVJP可沉積具有由噴嘴界定之形狀或圖樣之有機分子, 透過該喷嘴產生噴射。 一般,OVJP系統之該喷嘴或該等喷嘴係與载氣源及有 機分子源流體連通。 文中所用「噴嘴」為於其離開機構之後針對材料流之導 向、引導或者控制之機構。 一些(然並非所有)〇VJP系統包括於腔室内之沉積。許多 OVJP系統亦包括適以支撐位於喷嘴下之基板及相對於噴 嘴移動之基板支撐架。該噴嘴、該基板支撐架或兩者可移 動。於使用腔室之情況下,喷嘴及基板支撑架可位於該腔 室内。使用腔室可較好地控制周圍條件,諸如背景壓力、 氣體挺成及溫度。文中所用之於喷嘴之「下方」意指位於 喷嘴所指(即噴嘴指向於基板)之方向上。該喷嘴可定向於 該基材之任何數量的方向上。 OVJP實際上已證實使用單一載氣(通常是指氮氣)將有機 蒸氣傳遞於噴嘴中,藉由該㈣沉積於與該喷嘴緊密接近 之純上’從而得到具有由該噴嘴之尺寸界定之橫向尺寸 之薄膜。雖然,通常攄簡里陆、+、 媒間早陳述’所沉積之薄膜之寬度係 等於喷嘴之尺寸,但是利用_ ’、 λ 、 用較複雜之分析明瞭基板上不存 有物理遮罩時,自該嘴嘴啥 Τ射之有機分子之少於100%將 沉積於該噴嘴本身之下。 將 匕積於噴嘴區域外部之材料S J57726.doc 201212105 Soldering and patterning associated with some deposition methods such as inkjet and OVJP. Other methods are also available. The material to be deposited can be modified such that it can be compatible with a particular deposition process. For example, a substituent such as a branched or unbranched alkyl group and an aryl group preferably having at least 3 carbons may be used in the small molecule to enhance its ability to undergo solution treatment. Substituents having 2 or more carbons may be used, and 3 to 20 carbons are preferred ranges. Materials having an asymmetric structure may have better solution treatability than symmetric structures. Because asymmetric materials can have a lower tendency to recrystallize. Dendrimer substituents can be used to enhance the ability of small molecules to undergo solution processing. Devices made in accordance with embodiments of the present invention can be incorporated into a variety of consumer products, including flat panel displays, computer monitors, televisions, billboards, lamps for indoor or outdoor lighting and/or signal transmission, heads-up displays, fully transparent displays No, flexible display, laser printer, telephone, mobile phone, personal digital assistant (pDA), laptop, digital camera, camcorder viewfinder, micro display, vehicle, large Area wall, theater or open field screen or signal conductor. A variety of control mechanisms, including passive and active matrices, can be used to (4) devices made in accordance with the present invention. In these devices. Many of the materials are used in a comfortable temperature range (such as 1 to 30C, and better room temperature (2〇i25C&gt;c)). The materials, structures, and methods described in the text may be in addition to 〇(四) The application in the external device. For example, other optoelectronic devices such as organic solar cells and organic light smears may utilize such materials, structures, and methods. More generally, organic devices such as organic transistors can utilize such materials and junctions. 157726.doc 201212105 In many cases, organic vapor jet printing (OVJP) is an ideal method for depositing organic materials. The OVJP can deposit organic molecules having a shape or pattern defined by the nozzles without the use of a mask, photoresist or similar patterning technique based on substrate blocking or landing portions that are not desired to be deposited thereon. The nozzle produces an injection. Typically, the nozzles or nozzles of the OVJP system are in fluid communication with a source of carrier gas and an organic molecular source. As used herein, a "nozzle" is a mechanism that directs, directs, or controls the flow of material after it leaves the mechanism. Some (though not all) 〇VJP systems include deposition in the chamber. Many OVJP systems also include a substrate support that is adapted to support the substrate under the nozzle and move relative to the nozzle. The nozzle, the substrate support or both can be moved. Where a chamber is used, the nozzle and substrate support can be located within the chamber. The use of chambers allows for better control of ambient conditions such as background pressure, gas settling and temperature. As used herein, "below" the nozzle means in the direction of the nozzle (i.e., the nozzle is directed toward the substrate). The nozzle can be oriented in any number of directions of the substrate. OVJP has in fact demonstrated the use of a single carrier gas (generally referred to as nitrogen) to deliver organic vapor to the nozzle, which is deposited on the pure close to the nozzle to obtain a transverse dimension defined by the size of the nozzle. The film. Although, in general, Jane, Lu, and Media have stated that the width of the deposited film is equal to the size of the nozzle, but using _ ', λ, and more complicated analysis to show that there is no physical mask on the substrate. Less than 100% of the organic molecules emitted from the mouth will be deposited below the nozzle itself. Materials that will be accumulated outside the nozzle area

S 157726.doc 201212105 「過度喷射」。假設有機裝置係易污染的(特定言之,有機 發光裝置易存有具有較低激發能之發光分子),列少量之 過度喷射(&lt;〇.叫可能成問題。因此,期望使過Μ射最 小化。 早已揭示於喷嘴周圍添加非有機性氣體之同轴串流消 為「保護流」)可減少過度賁射,參見u s. 7,744,957。然 而,該同軸配置使得0VJP賁嘴之複雜性增加。文中揭: -種減少職料之㈣單的方法,該方法係簡單地於沉 積腔室内導入一種具有明顯較載氣大之原子質量之「填 充」氣體而實現。 ' 圖3顯示於孔之與氣流垂直之方向上截取之*種不同喷嘴 幾何結構之橫截面。各孔内之箭頭表示該孔之「最小尺 寸」。數學術語中,於最小尺寸之情況下,相對於整個箭 頭於與該箭頭垂直之方向上之平移,箭頭長度係處於局部 最大值(對於圓形、橢圓形及三角形)或係恒定的(對於矩 形),及該「最小」尺寸為最小局部最大值或針對此點產 生而。係叵疋的。圖3顯示分別具有圓形、糖圓形、三角 形及矩形橫截面之孔31〇、32〇、33〇及34〇之橫截面。對於 沉積線路而言,矩形孔為最佳之形狀,且其亦為相對容易 獲於利用石夕钱刻之噴嘴中之形狀。然而,可使用其他形 狀。 本月^供種沉積有機物質之方法。提供其内置有基 板之腔至。有機物質係經自導向於基板之噴嘴喷射:第一 氣體;及由該第—氣體攜帶之有機物質之蒸氣沉積於基板 157726.doc •12- 201212105 上。於沉積有機物質期間,將第二氣體提供於該腔室中。 該第二氣體之流速為流入真空腔室内之所有氣體之流速總 和之至少5%。該苐二氣體具有較該第一氣體之分子量大 至^2〇/〇之刀子里。該第二氣體係經由遠離該喷嘴之孔提 供於該腔室中。 較Ί土地„亥第—氣體之流速為流入真空⑲室内之所有氣 體之流速總和之至少3〇%。更佳地,該第二氣體之流速為 流入真空腔室内之所有氣體之流逮總和之至少6〇〇/〇。 已證實(參見圖5及相關之論述)可料「填充」氣體之 第二氣體之存在相對於其中僅存有載氣替代較重填充氣體 之方法使得過度噴射減少。該第二氣體之一個特徵為盆係 經由遠離喷嘴之孔導入腔室内。對於「遠離」喷嘴,其意 指通過其引人填充氣體之孔係離開噴嘴孔喷嘴孔之至少^ 個「最小尺才」。於大多數實施例令,極有可能地,通過 其引入填充氣之孔係離得較遠。該填充氣體不同於「保雄 氣」,於其之最常見實施例中’其係經由通過其引入載: 之喷嘴周圍之圓㈣入腔室内’即:引入保護流之特定位 置係關係於自喷嘴喷射之氣體之流體動力學。於其最純意 義上’引入「填充氣體」之特定位置則無關緊要,因為腔 室中之周圍氣體中存有填充氣體會影響自喷嘴噴射之氣體 之流體動力學’從而導致較窄之噴射擴散。因此,相較於 使用保護流,使用重的填充氣體可更易於實施。 對於「重的」,文中意指填充( (或第一)氣體大至少20%之分子'、父载流 &lt;刀千里。大至少2〇%之分子量S 157726.doc 201212105 "Overspray". It is assumed that organic devices are susceptible to contamination (specifically, organic light-emitting devices are prone to have luminescent molecules with lower excitation energies), and a small amount of over-spraying (&lt;〇.called may be problematic. Therefore, it is desirable to make overshoot Minimization. It has been revealed that the addition of a non-organic gas around the nozzle as a "protective flow" reduces excessive bleed, see u s. 7, 744, 957. However, this coaxial configuration increases the complexity of the 0VJP pout. It is disclosed in the text: - A method for reducing the (4) order of the material, which is simply implemented by introducing a "filling" gas having a substantially higher atomic mass than the carrier gas in the deposition chamber. Figure 3 shows the cross section of the different nozzle geometries taken in the direction perpendicular to the airflow. The arrows in each hole indicate the "minimum size" of the hole. In mathematical terms, in the case of the smallest dimension, the length of the arrow is at a local maximum (for circles, ellipses, and triangles) or constant relative to the translation of the entire arrow in a direction perpendicular to the arrow (for rectangles) ), and the "minimum" size is the minimum local maximum or is generated for this point. Systematic. Figure 3 shows cross sections of holes 31, 32, 33 and 34, respectively, having a circular, sugar circular, triangular and rectangular cross section. For the deposition line, the rectangular hole is the best shape, and it is also relatively easy to obtain the shape in the nozzle which utilizes the stone carving. However, other shapes can be used. This month ^ the method of seeding organic matter. Provide a cavity with a built-in substrate to. The organic substance is sprayed through a nozzle directed to the substrate: a first gas; and a vapor of the organic substance carried by the first gas is deposited on the substrate 157726.doc • 12-201212105. A second gas is provided in the chamber during deposition of the organic material. The flow rate of the second gas is at least 5% of the sum of the flow rates of all gases flowing into the vacuum chamber. The helium gas has a knives larger than the molecular weight of the first gas to 2 〇/〇. The second gas system is provided in the chamber via a hole remote from the nozzle. The flow rate of the gas is at least 3% of the sum of the flow rates of all the gases flowing into the vacuum chamber 19. Preferably, the flow rate of the second gas is the sum of the flows of all the gases flowing into the vacuum chamber. At least 6 〇〇/〇. It has been confirmed (see Figure 5 and related discussion) that the presence of a second gas that can be "filled" with gas reduces the over-injection relative to the method in which only the carrier gas is substituted for the heavier fill gas. One feature of the second gas is that the basin is introduced into the chamber via a hole remote from the nozzle. By "away from" the nozzle, it means that at least the "minimum ruler" of the nozzle hole through which the gas is filled is removed from the nozzle hole. In most embodiments, it is highly probable that the pores through which the fill gas is introduced are further apart. The filling gas is different from "Bao Xiongqi", in its most common embodiment, 'it enters the chamber through a circle (four) around the nozzle through which it is introduced: that is, the specific position at which the protective flow is introduced is related to the self-nozzle The fluid dynamics of the injected gas. In its purest sense, it is irrelevant to introduce a specific location of the "filler gas" because the presence of a filling gas in the surrounding gas in the chamber affects the hydrodynamics of the gas ejected from the nozzle, resulting in a narrower jet diffusion. . Therefore, the use of a heavy fill gas can be easier to implement than when using a guard stream. For "heavy", the text means filling ((or first) gas at least 20% of the molecule', parent carrier flow &lt; knife miles. At least 2〇% molecular weight

157726.doc -13. S 201212105 係期望具有如相對於圖5及相關實驗所證實之效應,因為 相較於Nz之分子量14,Ar具有為18之分子量。由窄噴射擴 散觀點可知’填充氣體相對載氣越重則越好。填充氣體之 分子量較載氣之分子量大至少1〇〇%為較佳。 較佳地,根據裝置性能’填充氣體為惰性。填充氣體不 應與進行製造之裝置之材料發生反應。惰性且重之適宜氣 體包括Ar、Κι·、氟利昂、Xe、c〇2及wf6。n2較佳係用作 第一氣體,因為其為惰性且極輕。He亦可用作載氣,其顯 不「較重」填充氣體之新的可能性。例如,A係重於^, 且當He為載氣時,n2可用作填充氣體。 填充氣體可為符合重量標準之單一氣體,或無論其係較 載氣之分子量大20%還是100%,其可為各符合重量標準之 氣體之混合物。然而,爲了簡單起見,較佳地,使用單一 氣體,該填充氣體具有其所預期之效應,因為其係由相對 載氣較重之分子組成,且無論所有填充氣體分子相同與 否,應產生該效應。 大多數實施例中,期望載氣可為單一氣體,較佳為沁。 然而,本發明之實施例可利用具有多氣體組分之載氣實 施。於5亥情i兄下,該载氣之「分子量」應視為莫耳平均分 子量。 較佳地,於沉積有機物質期間,真空腔室中之總壓力係 介於1毫托及1托之間。一般,對於〇VJp而言,其為較佳 之壓力範圍。同樣地,0VJP(包括利用填充氣體之〇VJP) 可於高壓及低壓下實施。但是,低於該範圍下限之壓力不 157726.doc 201212105 佳,因為〇vjp根據其性質係 貝货'於'儿積期間將氣體引入腔室 内,以致相較於諸如熱蒸鍍之盆 八他方法中之類似真空度, 較低之真空度可能需求極A昂眚 卜视叩貝之真空設備。較高之壓力 可輕易地被利用,但一般庠銘 愿移除载氣以致沉積可發生於腔 室内達可控平衡之整段睥 蚁時間内,且極容易獲得1托之廢 力。 有可於大氣壓或高壓下 體之使用可應用於其等 該腔室較佳為真空腔室,然而, 貫施之OVJP之實施例,且填充氣 實施例。 /里化腔至内填充乳體的量之—種方法係根據流速。於平 衡時Ή引入腔室内之不同氣體之相對流速可對應於位 於遠離引入氣體之任何孔之位置處之氣體(即腔室内之 「周圍」氣體)之分麗。缺;、*、± 刀莹…、而,〜速之控制及測定遠比分 壓來得容易。 量化腔室内填充氣體的量之另-種方法係對過度噴射效 應之測定。OLED上下文中本發明實施例之一個目標係減 小具有不同結構及通常發射不同顏色的光之鄰近裝置中不 純分子的量。不純分子.於將其視為雜質之裝置中具發射性 ^情況下,藉由測定該裝置之發射極易量化所含雜質的 篁。圖5之實驗顯示相對於其中存有填充氣體之情境,適 度量之填充氣體可輕易減小雜質的量,但相同的總壓係同 铋的(且係藉由存有載氣所致)。一般,適用於之噴嘴 可具有相對於圖3所述之「最小尺寸」。量化填充氣體是否 有具有足以具有所期望效應之分壓之一種方法係進行簡單 腿如 5 201212105 實驗,於相同的總壓力下,將利用填充氣體進行之〇vjp 與其中僅存有載氣下進行之〇ν;ρ作比較。此點可如圖5所 述實現。過度喷射之效應可於離圖案化特徵部邊緣一個最 小尺寸之處進行測定。相對於在無該第二氣體下所進行之 其他相同沉積,在沉積該有機物質期間腔室中該第二氣體 之分壓係足以使於離該圖案化特徵部邊緣一個最小尺寸之 距離處沉積之有機物質的量減少2倍,可以說該填充氣體 具有顯著效應。如圖5所例示,該效應係極易藉由適度量 之填充氣體實現。 較佳地,OVJP係於相對差的真空度(一般,j毫托至丨托) 下進行,然而,較高真空度至大氣壓力或更高壓力之實施 例係極有可能的。因此,可藉由有機分子於其已經由載氣 攜帶通過喷嘴之後觀察到真空腔室内殘餘氣體之可評估之 分壓。於該限制範圍内’壓力與載氣流速之一些組合可得 到最小量之過度喷射。 本發明之實施例包括進一步經有意引入沉積腔室内具部 分壓力之重於載氣之氣體來減少過度嘴射。該較重之氣體 可稱為「填充」氣體。該較重之氣體對於離開噴嘴之載氣 及有機蒸氣之膨脹之限制係優於載氣,於一特定例示性實 例中,載氣為氮氣及腔室係填充有具部分壓力之氬氣。其 中腔至包含氬氣之實例中之過度噴射於可測定程度上係少 於腔至僅包含經由載氣引入之氮氣之情況下之過度噴射。 可存在可不同於僅使用N2之最佳壓力之Ar填充氣之最佳 總壓力’且可期望測得該最佳總壓力。可藉由於不同總壓 157726.doc 201212105 力下進订,系歹,j沉積並測定結丨輕易測得最佳總屢力。此 點慣常係針對不存有填充氣之規則性〇vjp進行,且應為 存有填充氣體之OVJP之等同例行。 右僅考置過度喷射之減少,則期望使用最重之可能填充 氣體。然而,於選擇填充氣體中,應考量其他因素’諸如 成本亦應考里毒性及環境效應。填充氣體亦應為惰性, T其:應與有機裝置之任何部分發生不利反應。至於因高 刀子里而期望用作填充氣之氣體,較佳之選擇包括Kr、諸 ^ CF4、C2F6之複合氣體分子及按由高到低順序之氣利 昂、心、叫及呢。預期相較於僅存有載氣時之相同總 p力田存有重填充氣體時,可理想地減少過度噴射。然 而,預期各填充/載流氣體組合可具有使過度喷射最小化 之不同分壓,相對簡單的實驗即可測定該分壓。 使用特種氣體填充OVJp沉積之一個考量極有可能係成 本。較佳連續引入新製填充氣體以補償自噴嘴出來之載 氣,否者,沉積腔室最終將僅填充有载氣。此點意指可隨 時間使用大體積之填充氣體’且應考量成本及/或處置。 本發明之實施例可於多維範圍内實施。宜可於期望用於 OVJP系統之任何尺寸下採用重的周圍氣體之應用。 圖4顯示本發明一具體實施例之簡單單喷嘴實施例。圖4 顯示系統410及450。系統41 〇包括一具有一 〇Vjp喷嘴422 之腔室420、一用於引入填充氣體之孔424及一用於自腔室 420移去氣體之孔426。真空系統可連接至孔426。於氣體 源自腔室外部之來源之情況下,噴嘴422係抽象地例示為157726.doc -13. S 201212105 is expected to have an effect as demonstrated with respect to Figure 5 and related experiments, since Ar has a molecular weight of 18 compared to the molecular weight 14 of Nz. From the viewpoint of narrow injection diffusion, it is understood that the heavier the filling gas is, the better the carrier gas is. Preferably, the molecular weight of the filling gas is at least 1% greater than the molecular weight of the carrier gas. Preferably, the filling gas is inert depending on the performance of the device. The filling gas should not react with the material of the device being manufactured. Suitable gases which are inert and heavy include Ar, Κι·, Freon, Xe, c〇2 and wf6. N2 is preferably used as the first gas because it is inert and extremely light. He can also be used as a carrier gas, which shows a new possibility of "heavy" filling gas. For example, A is heavier than ^, and when He is a carrier gas, n2 can be used as a filling gas. The filling gas may be a single gas that meets the weight standard, or whether it is 20% or 100% larger than the molecular weight of the carrier gas, and may be a mixture of gases each meeting the weight standard. However, for the sake of simplicity, it is preferred to use a single gas which has its intended effect because it consists of molecules that are heavier relative to the carrier gas and should be generated regardless of whether all of the filling gas molecules are the same or not. This effect. In most embodiments, the carrier gas is desirably a single gas, preferably helium. However, embodiments of the present invention may utilize a carrier gas implementation having multiple gas components. Under the 5th brother, the "molecular weight" of the carrier gas should be regarded as the molar average molecular weight. Preferably, during deposition of the organic material, the total pressure in the vacuum chamber is between 1 mTorr and 1 Torr. Generally, it is a preferred pressure range for 〇VJp. Similarly, 0VJP (including VJP using a fill gas) can be implemented at high pressure and low pressure. However, the pressure below the lower limit of the range is not better than 157726.doc 201212105, because 〇vjp introduces gas into the chamber according to its nature, so that it is compared with the method such as hot evaporation. Similar to the degree of vacuum, the lower vacuum may require a vacuum device that is extremely expensive. Higher pressures can be easily exploited, but in general, Yan Ming is willing to remove the carrier gas so that the deposition can take place within the chamber for a controlled period of time, and it is extremely easy to obtain 1 Torr of waste. The use of an atmospheric or high pressure sub-corpore is applicable to the chamber, preferably a vacuum chamber, however, an embodiment of the OVJP is applied, and a gas encapsulating embodiment is employed. The method of filling the amount of milk into the inner cavity is based on the flow rate. The relative flow rate of the different gases introduced into the chamber during equilibrium may correspond to the gas located at a location remote from any of the holes in the incoming gas (i.e., the "surrounding" gas within the chamber). Lack of;, *, ± Knife..., and the control and measurement of the speed is much easier than the partial pressure. Another method of quantifying the amount of gas filled in the chamber is the determination of the overspray effect. One object of embodiments of the present invention in the context of OLEDs is to reduce the amount of impure molecules in adjacent devices having different structures and generally emitting light of different colors. Impure molecule. In the case of emissivity in a device that treats it as an impurity, it is easy to quantify the enthalpy of impurities contained by measuring the emitter of the device. The experiment of Figure 5 shows that a suitable amount of fill gas can easily reduce the amount of impurities relative to the atmosphere in which the fill gas is present, but the same total pressure is the same (and is due to the presence of carrier gas). Generally, the nozzles that are suitable for use may have a "minimum dimension" as described with respect to Figure 3. One method of quantifying whether the filling gas has a partial pressure sufficient to have the desired effect is to perform a simple leg, such as the experiment of 201212105, at the same total pressure, using a filling gas to carry out the 〇vjp and carrying only the carrier gas therein. 〇 ν; ρ for comparison. This can be achieved as shown in Figure 5. The effect of overspray can be measured at a minimum size from the edge of the patterned feature. The partial pressure of the second gas in the chamber during deposition of the organic material is sufficient to deposit at a distance from a margin of the patterned feature edge relative to other identical deposits performed without the second gas The amount of organic matter is reduced by a factor of two, and it can be said that the filling gas has a remarkable effect. As illustrated in Figure 5, this effect is easily achieved by a suitable filling gas. Preferably, the OVJP is carried out at a relatively low vacuum (generally, j millitorr to chin), however, embodiments with higher vacuum to atmospheric pressure or higher are highly desirable. Thus, the evaluable partial pressure of the residual gas in the vacuum chamber can be observed by the organic molecules after they have been carried by the carrier gas through the nozzle. Within this limit, some combination of pressure and carrier gas flow rate results in a minimum amount of over-injection. Embodiments of the present invention include further reducing the excessive mouth spray by intentionally introducing a gas having a partial pressure within the deposition chamber that is heavier than the carrier gas. This heavier gas can be referred to as a "filler" gas. The heavier gas is more restrictive to the expansion of the carrier gas and organic vapor exiting the nozzle than the carrier gas. In a particular exemplary embodiment, the carrier gas is nitrogen and the chamber is filled with a portion of the pressure of argon. The over-injection in the case from the chamber to the argon-containing example is less than measurable to the extent of over-injection to the case where only nitrogen introduced via the carrier gas is included. There may be an optimum total pressure 'which may be different from the Ar fill gas using only the optimum pressure of N2 and it may be desirable to measure the optimum total pressure. Can be determined by different total pressure 157726.doc 201212105 force, 歹, j deposition and determination of the knot easily measured the best total force. This is customary for the regular 〇vjp without the filling gas and should be the equivalent of the OVJP with the filling gas. Only the reduction in over-injection is taken to the right, and it is desirable to use the heaviest possible filling gas. However, in selecting a fill gas, other factors should be considered, such as cost and toxicity. The filling gas should also be inert, T: it should react adversely with any part of the organic device. As for the gas which is desired to be used as the filling gas due to the high knives, the preferred choices include the composite gas molecules of Kr, CF4, C2F6, and the gas, the heart, and the like in the order of high to low. It is expected that over-injection can be desirably reduced when there is a heavy fill gas in the same total p-field when only the carrier gas is present. However, it is contemplated that each of the packed/carrier gas combinations can have different partial pressures that minimize over-injection, which can be determined by relatively simple experiments. One consideration for filling OVJp deposits with specialty gases is very likely to be cost. It is preferred to continuously introduce a new fill gas to compensate for the carrier gas exiting the nozzle, otherwise the deposition chamber will eventually be filled with only the carrier gas. This point means that a large volume of fill gas can be used over time&apos; and cost and/or disposal should be considered. Embodiments of the invention can be implemented in a multi-dimensional range. It is desirable to use heavy ambient gas for any size of the OVJP system. Figure 4 shows a simple single nozzle embodiment of an embodiment of the invention. Figure 4 shows systems 410 and 450. The system 41 includes a chamber 420 having a 〇Vjp nozzle 422, a hole 424 for introducing a fill gas, and a hole 426 for removing gas from the chamber 420. A vacuum system can be coupled to the aperture 426. In the case where the gas originates from a source outside the chamber, the nozzle 422 is abstractly illustrated as

- S 157726.doc 201212105 氣體430之喷射流。應明瞭可使用包括用於jp之喷嘴之 任何多種已知系統。系統410例示存有輕的周圍氣體情況 下之較寬喷射擴散。 系統450包括一具有一 OVJP喷嘴462之腔室46〇、一用於 引入填充氣之孔464及一用於自腔室460移去氣體之孔 466。真空系統可連接至孔466。於氣體源自腔室外部之來 源之情況下,噴嘴4 6 2係抽象地例示為引入氣體4 7 〇之喷射 流。應明瞭可使用包括用於OVJP之噴嘴之任何多種已知 系統。系統450例示存有重的周圍氣體情況下之較窄噴射 擴散。 喷嘴之一維陣列(即喷嘴線)為噴嘴塊之較佳實施例。此 種陣列可藉由相對基板(反之亦然,於與喷嘴線垂直之方 向上)移動喷嘴實現高產量圖案化。亦可使用多個喷嘴之 其他配置,諸如二維陣列。可使用多種噴嘴形狀。例如, 較佳地,依據相對基板平移陣列之方向上之長軸線,該等 贺嘴可為長形(例如矩形)。 本發明之實施例一般可聯合用於〇VJp或改良〇v JP之其 他技術實施《例如,本發明之實施例可結合位於引起定域 化真空之噴嘴塊中之排放器實施,此等揭示於美國專利申 5月案第11/643,795號中,該案係以引用的方式併入。 圖5顯示發射比對離沉積邊緣之距離之繪圖,其提供對 於沉積期間發生多少過度噴射之量度。不同沉積條件例示 重的填充氣體對OVJP沉積之效應,且明確言之,藉由使 用重的填充氣體而減少過度噴射。藉由遍及利用具有線間 157726.doc 201212105 0.5 mm間距之1 mm寬ITO陽極圖案化之6&quot;玻璃基板上進行 真空熱沉積(VTE)得到NPD/TPBi雙層裝置。該裝置之電荷 注入及傳遞特徵高度不對稱以致所產生之所有激子係緊密 受限於NPD/TPBi界面。於不存在污染下,所得裝置顯示 自NPD之藍光EL。使用沿著NPD及TPBi之填充型VTE沉積 之間之ITO線中之一者之0VJP沉積細紅色摻雜劑線。由於 有效激子係傳遞至紅色染料,該沉積線顯示紅色電激發 光。於沉積ITO條遠處之紅色染料之任何過度喷射亦可根 據沉積於該位置處之紅色染料的量顯示某種程度之紅光發 射。電激發光光譜中之波峰因紅色染料及預設NPD發射而 係明顯獨立的及紅光及藍光峰值之比係定量地限定所存有 之紅色染料的量;該比係採用測試結構之受控VTE沉積進 行校準。由於有機異質界面處之激子之有效限制及每況愈 下之能量傳遞之高效率,因此,該等結構極易產生過度噴 射,已用以偵測&lt;0.25 A之材料或約1/1〇之單層。 實驗配置於某種程度上係受踉的。示意性地,裝置 OVJP部分之製造係於諸如圖4中所例示腔室之腔室中實 現。該腔室為真空腔室,但該真空並不具有可變性價值_ 即:該真空在其中無設定條件下係打開或關閉的。假設該 真空係打開的’則腔室内之總壓力係依據載氣及填充氣體 之流速進灯測定。該腔室具有可測定該腔室内之總壓力之 單壓力測定裝置。 圖5之不同输圖表示如下:〇1托之N2表示校準操作,以 測定將載氣流速設定為特定量情況下之總壓力(〇1托),及- S 157726.doc 201212105 Jet stream of gas 430. It should be understood that any of a variety of known systems including nozzles for jp can be used. System 410 illustrates a wider spray spread in the presence of a light ambient gas. System 450 includes a chamber 46 having an OVJP nozzle 462, a bore 464 for introducing a fill gas, and a bore 466 for removing gas from chamber 460. A vacuum system can be coupled to the aperture 466. In the case where the gas originates from a source outside the chamber, the nozzle 426 is abstractly illustrated as a jet of gas introduced into the chamber. It should be understood that any of a variety of known systems including nozzles for OVJP can be used. System 450 illustrates a narrower jet spread with heavy ambient gas. One dimensional array of nozzles (i.e., nozzle lines) is a preferred embodiment of the nozzle block. Such arrays enable high throughput patterning by moving the nozzles relative to the substrate (and vice versa, in the direction perpendicular to the nozzle line). Other configurations of multiple nozzles, such as a two-dimensional array, can also be used. A variety of nozzle shapes are available. For example, preferably, the heels may be elongated (e.g., rectangular) depending on the long axis in the direction of the translational array relative to the substrate. Embodiments of the invention may generally be practiced in conjunction with other techniques for 〇VJp or modified 〇v JP. For example, embodiments of the present invention may be implemented in conjunction with an ejector in a nozzle block that causes localized vacuum, as disclosed herein. U.S. Patent Application Serial No. 11/643,795, the disclosure of which is incorporated herein by reference. Figure 5 shows a plot of the emission versus distance from the deposition edge, which provides a measure of how much over-spray occurs during deposition. Different deposition conditions exemplify the effect of heavy fill gas on OVJP deposition and, in particular, reduce over-injection by using a heavy fill gas. The NPD/TPBi double layer device was obtained by vacuum thermal deposition (VTE) on a 6&quot;glass substrate patterned with a 1 mm wide ITO anode having a line spacing of 157726.doc 201212105 0.5 mm. The device's charge injection and transfer characteristics are highly asymmetric such that all excitons generated are closely constrained to the NPD/TPBi interface. The resulting device showed a blue light EL from NPD in the absence of contamination. A fine red dopant line is deposited using 0VJP along one of the ITO lines between the filled VTE deposition of NPD and TPBi. Since the effective exciton is transferred to the red dye, the deposition line shows red electric excitation light. Any overspray of the red dye at the far end of the deposited ITO strip may also exhibit some degree of red light emission depending on the amount of red dye deposited at that location. The peaks in the electroluminescence spectrum are significantly independent of the red dye and the preset NPD emission and the ratio of the red and blue peaks quantitatively defines the amount of red dye present; this ratio is the controlled VTE of the test structure Deposition is performed for calibration. Due to the effective limitation of excitons at the organic heterointerface and the high efficiency of energy transfer over time, these structures are highly prone to overspray and have been used to detect &lt;0.25 A material or about 1/1 inch. Floor. The experimental configuration is somewhat embarrassing. Illustratively, the fabrication of the device OVJP portion is accomplished in a chamber such as the chamber illustrated in Figure 4. The chamber is a vacuum chamber, but the vacuum does not have a variable value - that is, the vacuum is opened or closed without setting conditions therein. Assuming that the vacuum system is open, the total pressure in the chamber is measured by the flow rate of the carrier gas and the filling gas. The chamber has a single pressure measuring device that measures the total pressure within the chamber. The different maps of Fig. 5 are expressed as follows: N1 托 N2 indicates a calibration operation to determine the total pressure (〇1 Torr) in the case where the carrier gas flow rate is set to a specific amount, and

S 157726.doc -19- 201212105 進入腔室内之唯一氣體為通過噴嘴之載氣。該繪圖顯示過 度喷射較少,因為總壓力較小’然並不類似於用以達測定 周圍氣體是否係與載氣相同或包括較重填充氣體之效應之 目的之其他繪圖。對於&amp;為0.3托之兩個緣圖,Ar填充係 相同的實驗’其申Ns載氣之流速係與〇」托之乂之流速相 同’但Ar氣同樣係經由遠離喷嘴之孔進入腔室内。αγ之流 速足以達到為0,3托之總壓力。對於乂為〇.3托之兩個繪 圖,N2填充為相同的實驗,其係以與Ar填充實驗相同的方 法進行’除了經由遠離喷嘴之孔使A氣代替Ar氣進入腔室 内以達到高達〇·3托之總壓力之外。數據顯示於相同壓力 下,相較於使用預設Ν2填充,使用〇.3托之^填充使得過 度喷射較少。 圖5所示之最少量之過度噴射係適用於不存在填充氣體 之校準操作。於填充氣體下之兩種結果顯示相較於使用該 預設A填充之於〇.丨托下之沉積,過度喷射更多。然而, 由於實驗性儀器之受限性質,〇.丨托為流動通過噴嘴及任 何填充氣體增加壓力之最小可實現壓力,因此可利用該受 限儀器測試於〇. 1托總壓力下之Ar填充。相較於〇 3托之 N2(Ar填充)’相關之對照為〇 3托之NAN〗填充),此點顯示 於相同壓力下,相對於較輕之周圍氣體,較重之周圍氣體 (或更確切地說,因重氣體產生至少明顯分壓情況下之周 圍氣體)使得過度喷射減少。即使於經由遠離噴嘴之孔引 入腔至内而存有重氣體之情況下,此點亦準確。 應明瞭文中所述之不同實施例僅僅係根據實例之方式, 157726.doc -20- 201212105 热用蒽不在限制本發明之範圍。例如, 構之許多可在不脫離本發明之精神下中所述材料及結 替。因此’如熟習此項相關技術者:冑及-構代 ηπ 瞭,所主張之本發 明可包括文中所述特定實例及較佳實施例之變化。應明瞭 對於本發明為何操作之不同理論之用意不在於限制。 【圖式簡單說明】 圖1顯示有機發光裝置。 圖2顯示不具有不同電子傳遞層之反向有機發光裝置。 圖3顯示於與氣流垂直之方向上截取之*種不同喷嘴幾何 結構之橫戴面。 圖4顯示2個欲進行物質沉積之腔室,一者具有輕的周圍 氣體及另一者具有重的周圍氣體。 圖5顯示發射比對離沉積邊緣之距離之繪圖,其提供針 對沉積期間發生多少過度喷射之量度。 【主要元件符號說明】 100 有機發光裝置 110 基板 115 陽極 120 電洞注入層 125 電洞傳遞層 130 電子阻擋層 135 發射層 140 電洞阻擋層 145 電子傳遞層S 157726.doc -19- 201212105 The only gas entering the chamber is the carrier gas passing through the nozzle. The plot shows that the over-injection is less because the total pressure is smaller, but it is not similar to other plots used to determine whether the surrounding gas is the same as the carrier gas or includes the effect of a heavier fill gas. For the two edge maps of &amp; 0.3 Torr, the Ar experiment is the same experiment. The flow rate of the Ns carrier gas is the same as the flow rate of the 〇" but the Ar gas enters the chamber through the hole away from the nozzle. . The flow rate of αγ is sufficient to reach a total pressure of 0,3 Torr. For the two plots of 乂.3 托, N2 was filled for the same experiment, which was carried out in the same way as the Ar filling experiment, except that A gas was introduced into the chamber instead of Ar gas via a hole away from the nozzle to achieve up to 〇. · Outside the total pressure of 3 Torr. The data is shown at the same pressure, compared to the use of the preset Ν2 fill, using a 〇3 Torr fill to make the over-spray less. The minimum amount of overspray shown in Figure 5 is suitable for calibration operations where no fill gas is present. The two results for the fill gas show that the overspray is more than the deposition using the preset A fill to the crucible. However, due to the limited nature of experimental instruments, 丨. 丨 为 is the minimum achievable pressure to increase the pressure through the nozzle and any filling gas, so the limited instrument can be used to test the Ar filling at a total pressure of 1 Torr. . Compared to the N2 (Ar-filled) of the 〇3 tray, the control associated with the NAN is filled with 〇3 Torr, which is shown at the same pressure, with respect to the lighter ambient gas, the heavier ambient gas (or Specifically, the excessive gas is reduced due to the generation of at least a significant partial pressure of the gas by the heavy gas. This is accurate even in the case where heavy gas is introduced into the cavity through the hole away from the nozzle. It is to be understood that the various embodiments described herein are by way of example only, and the 157726.doc -20-201212105 heat is not intended to limit the scope of the invention. For example, many of the materials and alternatives may be made without departing from the spirit of the invention. Thus, the present invention is intended to include variations of the specific examples and preferred embodiments described herein. It should be understood that the different theories of why the invention operates are not intended to be limiting. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows an organic light-emitting device. Figure 2 shows a reverse organic light-emitting device without different electron-transport layers. Figure 3 shows the cross-face of a different nozzle geometry taken in a direction perpendicular to the airflow. Figure 4 shows two chambers for material deposition, one with light ambient gas and the other with heavy ambient gas. Figure 5 shows a plot of the emission versus distance from the deposition edge, which provides a measure of how much over-spray occurs during deposition. [Main component symbol description] 100 Organic light-emitting device 110 Substrate 115 Anode 120 Hole injection layer 125 Hole transfer layer 130 Electron barrier layer 135 Emissive layer 140 Hole barrier layer 145 Electron transfer layer

S 157726.doc -21 _ 201212105 150 電子注入層 155 保護層 160 陰極 162 第一傳導層 164 第二傳導層 200 反向OLED 210 基板 215 陰極 220 發射層 225 電洞傳遞層 230 陽極 310 子L 320 子L 330 孔 340 孔 410 系統 420 腔室 422 噴嘴 424 子L 426 子L 430 氣體 450 糸統 460 腔室 462 喷嘴 157726.doc -22 201212105 464 子L 466 子L 470 氣體 s 157726.doc -23-S 157726.doc -21 _ 201212105 150 electron injection layer 155 protective layer 160 cathode 162 first conductive layer 164 second conductive layer 200 reverse OLED 210 substrate 215 cathode 220 emission layer 225 hole transfer layer 230 anode 310 sub L 320 sub L 330 hole 340 hole 410 system 420 chamber 422 nozzle 424 sub L 426 sub L 430 gas 450 糸 460 chamber 462 nozzle 157726.doc -22 201212105 464 sub L 466 sub L 470 gas s 157726.doc -23-

Claims (1)

201212105 七、申請專利範圍: 1· 一種方法,其包括: ^供其内置有基板之腔室; 一,自導向於該基板之喷嘴喷射:第一氣體;及由該第 一氣體搞帶之有機物質之蒸氣’使有機物質沈積於該基 板上; 於儿積有機物質期間,於該腔室中提供第二氣體. 其中 ”, 該第二氣體之流速為流入該真空腔室内之所有氣體之 流速總和之至少5% ; 該第二氧體具有較該第一氣體之分子量大至少2〇%之 分子量;及 °亥第二氣體係經遠離該喷嘴之孔提供於該腔室中β 2. = π求項丨之方法,其中該第二氣體之流速為流入該真 二腔至内之所有氣體之流速總和之至少30〇/〇。 3. =明求項丨之方法,其中該第二氣體之流速為流入該真 二月工至内之所有氣體之流速總和之至少60%。 4’ i叫求項1之方法,其中,於沉積有機物質期間,該真 空腔室中之總壓力係介於丨毫托至丨托之間。 5·如睛求項1之方法’其中該第-氣體為Ν2。 6 ^叫求項1之方法’其中該第二氣體係選自由Ar、Kr、 氟利叩(freons)、Xe、c〇2及WF0組成之群。 7 · 如請求JE 1 .. 喝1之方法,其中該第二氣體為單一物質。 8. 如請求堪 一崎1之方法’其中該第二氣體具有較該第一氣體 s 157726.doc 201212105 之刀子量大至少1 〇〇〇/0之分子量ο 9·如明求項1之方法’其中該第二氣體為各具有較該第一 氣體之分子量大至少20%之分子量之物質之混合物。 10.如明求項丨之方法其中該第二氣體為各具有較該第一 氣體之分子量大至少100%之分子量之物質之混合物。 U.如明求項1之方法,其中該腔室為真空腔室。 12. —種方法,其包括: 提供其内置有基板之腔室; k自導向於該基板之噴嘴喷射:第一氣體;及由該第 一氣體攜帶之有機物質之蒸氣,使有機物質沉積於該基 板上; 於沉積有機物質期間,於該腔室中提供第二氣體; 其中 該第二氣體具有較該第一氣體之分子量大至少2〇%之 分子量; 該噴嘴具有具最小尺寸之孔; 該有機物質係沉積於該基板上成為具有由該孔之形狀 界定之形狀之圖案化特徵部; 相對於在無該第二氣體下所進行之其他相同沉積,在 沉積該有機物質期間腔室中該第二氣體之分壓係足以使 於離該圖案化特徵部邊緣一個最小尺寸之距離處沉積之 有機物質的量減少2倍。 157726.doc201212105 VII. Patent application scope: 1. A method comprising: a chamber for a built-in substrate; a nozzle sprayed from the substrate: a first gas; and an organic material carried by the first gas The vapor of the substance 'deposits the organic substance on the substrate; during the accumulation of the organic substance, a second gas is supplied in the chamber. wherein" the flow rate of the second gas is the flow rate of all the gas flowing into the vacuum chamber At least 5% of the sum; the second oxygen body has a molecular weight that is at least 2% greater than the molecular weight of the first gas; and the second gas system is provided in the chamber through a hole away from the nozzle. The method of claim π, wherein the flow rate of the second gas is at least 30 〇 / 〇 of the sum of the flow rates of all the gases flowing into the true two chambers. 3. = the method of the present invention, wherein the second gas The flow rate is at least 60% of the sum of the flow rates of all the gases flowing into the true February. 4' i is the method of claim 1, wherein during the deposition of the organic matter, the total pressure in the vacuum chamber is introduced. Yu Yutuo to the care 5. The method of claim 1 wherein the first gas is Ν 2. 6 ^ The method of claim 1 wherein the second gas system is selected from the group consisting of Ar, Kr, freons, Xe a group consisting of c〇2 and WF0. 7 · If JE 1 is requested, the method of drinking 1, wherein the second gas is a single substance. 8. If the method of claim 1 is requested, wherein the second gas has a comparison The first gas s 157726.doc 201212105 has a knife amount of at least 1 〇〇〇 / 0. The method of claim 1 wherein the second gas has a molecular weight greater than the first gas. A mixture of materials having a molecular weight of 20%. 10. The method of claim </ RTI> wherein the second gas is a mixture of materials each having a molecular weight greater than 100% greater than the molecular weight of the first gas. The method of claim 1, wherein the chamber is a vacuum chamber. 12. A method comprising: providing a chamber having a built-in substrate; k spraying from a nozzle directed to the substrate: a first gas; and by the first a vapor of an organic substance carried by the gas to deposit an organic substance on the substrate; Providing a second gas in the chamber during deposition of the organic substance; wherein the second gas has a molecular weight that is at least 2% greater than a molecular weight of the first gas; the nozzle has a pore having a minimum size; the organic substance is Deposited on the substrate to form a patterned feature having a shape defined by the shape of the hole; the second gas in the chamber during deposition of the organic substance relative to other identical depositions performed without the second gas The partial pressure is sufficient to reduce the amount of organic material deposited at a distance from the edge of the patterned feature by a factor of two. 157726.doc
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