WO2019181618A1 - Luminophore et dispositif électroluminescent - Google Patents

Luminophore et dispositif électroluminescent Download PDF

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Publication number
WO2019181618A1
WO2019181618A1 PCT/JP2019/009766 JP2019009766W WO2019181618A1 WO 2019181618 A1 WO2019181618 A1 WO 2019181618A1 JP 2019009766 W JP2019009766 W JP 2019009766W WO 2019181618 A1 WO2019181618 A1 WO 2019181618A1
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Prior art keywords
phosphor
single crystal
content
yag
blue light
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PCT/JP2019/009766
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English (en)
Japanese (ja)
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達也 照井
佐藤　真人
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Tdk株式会社
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Priority to DE112019001492.7T priority Critical patent/DE112019001492T5/de
Priority to CN201980021037.3A priority patent/CN111886319A/zh
Priority to US16/982,968 priority patent/US11634630B2/en
Priority to JP2020508233A priority patent/JPWO2019181618A1/ja
Publication of WO2019181618A1 publication Critical patent/WO2019181618A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
    • C09K11/7721—Aluminates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials

Definitions

  • the present invention relates to a phosphor and a light source device using the phosphor.
  • Patent Document 1 A blue light-emitting diode that emits blue light and a phosphor that is excited by receiving blue light from the blue light-emitting diode and emits yellow fluorescence, and mixes blue light (blue transmitted light) transmitted through the phosphor and yellow fluorescence
  • a Ce: YAG single crystal (Patent Document 1), a polycrystalline ceramic (Patent Document 2), and a eutectic (Patent Document 3) made of Ce: YAG and Al 2 O 3 are mainly used.
  • Patent Document 1 is a single crystal generated by the CZ method (Czochralski Method), there is a problem that sufficient white light cannot be obtained.
  • the segregation coefficient of Ce concentration of a single crystal produced by the CZ method is about 0.1 to 0.2 (Non-Patent Document 1), and there is a problem that the uniformity is low.
  • the transparent polycrystalline ceramic described in Patent Document 2 has a problem that a “temperature quenching” phenomenon occurs in which the luminous efficiency decreases at a high temperature. Furthermore, the transparent polycrystalline ceramic described in Patent Document 2 has a problem in that blue transmitted light is reduced due to scattering at grain boundaries, and the light emission intensity when used as a light source cannot be obtained sufficiently.
  • Patent Document 3 has a problem that the blue transmitted light is reduced by scattering at the phase boundary, and the emission intensity when used as a light source cannot be obtained sufficiently.
  • the wavelength of yellow fluorescence generally used for white light sources is 530 nm to 540 nm, and the wavelength of blue transmitted light is 405 nm to 460 nm.
  • the mixed light and the white color of the JIS standard are misaligned on the chromaticity table, and yellow fluorescence having a longer wavelength is required to obtain the white color of the JIS standard.
  • the present invention has a high internal quantum yield, can shift the fluorescence wavelength of yellow fluorescence to the longer wavelength side, has good temperature quenching resistance, and has excellent blue light transmittance. Another object is to provide a phosphor and a light source device having the phosphor.
  • the phosphor according to the present invention is a Ce: YAG single crystal in which the Ce content is 0.7 mol parts or more when the total content of Y and Ce is 100 mol parts. Consists of.
  • the phosphor according to the present invention is a single crystal and has almost no grain boundary or phase boundary, scattering at the grain boundary or phase boundary hardly occurs. For this reason, high blue light transmittance is obtained.
  • the phosphor according to the present invention enables high Ce content, so that high luminous efficiency due to high internal quantum yield can be obtained, and the fluorescence wavelength of yellow fluorescence can be shifted to the long wavelength side. For this reason, mixed light closer to white on the chromaticity table can be obtained by mixing the yellow fluorescence and the blue transmitted light.
  • the phosphor has a Ce content of 1.0 mol part or more when the total content of Y and Ce is 100 mol parts.
  • the phosphor has a fluorescence wavelength of 540 nm or more.
  • the phosphor has a relative value (%) of the internal quantum yield at 200 ° C. of 95% or more with respect to the internal quantum yield at room temperature (25 ° C.) with 450 nm blue light.
  • the temperature quenching resistance of the phosphor of the present invention is good, it is possible to maintain excellent light emission characteristics even in a high temperature environment.
  • the phosphor is produced by a micro-pulling down ( ⁇ -PD) method.
  • the light source device includes the phosphor according to the present invention and a blue light emitting diode and / or a blue semiconductor laser.
  • the light source device according to the present invention can be applied as a white light source.
  • FIG. 1 is a schematic cross-sectional view of a single crystal manufacturing apparatus for manufacturing a phosphor according to this embodiment.
  • the phosphor according to the present embodiment is a YAG-based single crystal (Ce: YAG single crystal) containing Ce as an activator. Since the phosphor according to the present embodiment is a single crystal and has almost no grain boundary or phase boundary, a high blue light transmittance can be obtained as compared with a eutectic or polycrystalline transparent ceramic.
  • the blue light transmittance of the phosphor means the transmittance of blue light having a predetermined wavelength irradiated on the phosphor.
  • the fact that the phosphor is a single crystal can be confirmed by confirming the crystal peak of the YAG single crystal by XRD.
  • the phosphor according to the present embodiment has a Ce content of 0.7 mol part or more when the total content of Y and Ce is 100 mol parts. As a result, high luminous efficiency due to high internal quantum yield can be obtained, and the fluorescence wavelength of yellow fluorescence can be shifted to the long wavelength side, and when mixed with blue transmitted light, white on the chromaticity table of the JIS standard Can be obtained.
  • the phosphor preferably has a Ce content of 1.0 mol part or more, with the total content of Y and Ce being 100 mol parts, and 1.0 mol parts to 2.0 mol parts. More preferred is the molar part.
  • the internal quantum yield means the conversion efficiency between excitation light and fluorescence. Specifically, the internal quantum yield is based on the number of photons (m) absorbed by the phosphor when irradiated with blue light of a predetermined excitation wavelength and the number of photons (n) of converted light obtained by converting the absorbed photons. Is calculated as m / n.
  • the fluorescence wavelength refers to a wavelength (peak wavelength) at which the strongest fluorescence emission is obtained in the excitation spectrum.
  • the phosphor according to this embodiment has a fluorescence wavelength of 540 nm or more. Thereby, when the yellow fluorescence of the phosphor according to the present embodiment and the blue transmitted light are combined, it is possible to obtain mixed light close to white on the chromaticity table. From the above viewpoint, the phosphor according to the present embodiment preferably has a fluorescence wavelength of 540 nm to 570 nm.
  • the relative value (%) of the internal quantum yield at 200 ° C. is 95% or more with respect to the internal quantum yield at room temperature (25 ° C.) with blue light of 450 nm.
  • This relative value is an evaluation value of the temperature quenching resistance. Since the phosphor of the present embodiment has such a good temperature quenching resistance, it is possible to maintain excellent light emission characteristics even in a high temperature environment. From the above viewpoint, the phosphor according to this embodiment has a relative value (%) of the internal quantum yield at 200 ° C. of 98% or more with respect to the internal quantum yield at room temperature (25 ° C.) with 450 nm blue light. It is preferable that
  • polycrystalline transparent ceramics tend to change in thermal energy when returning from the excited state to the ground state, and are inferior in temperature quenching resistance compared to single crystals.
  • the composition of the YAG-based single crystal is not particularly limited. For example, (Y 1 ⁇ x ⁇ yz ⁇ x ⁇ y Ce z ) 3 + a Al 5 ⁇ a O 12 (0 ⁇ x ⁇ 0.9994, 0 ⁇ y ⁇ 0.0669, 0.007 ⁇ z, ⁇ 0.016 ⁇ a ⁇ 0.315).
  • ⁇ and ⁇ are components for substituting Y.
  • examples of the elements ⁇ and ⁇ include Lu, Gd, Tb, and La.
  • FIG. 1 shows a schematic cross-sectional view of a single crystal manufacturing apparatus 2 by the ⁇ -PD method.
  • a melt of the target substance is obtained in the crucible 4 by directly or indirectly heating the crucible 4 containing the sample, and the seed crystal 14 placed below the crucible 4 is placed at the lower end of the crucible 4.
  • This is a melt solidification method in which a single crystal is grown by bringing it into contact with an opening and pulling down the seed crystal 14 while forming a solid-liquid interface there.
  • the phosphor according to this embodiment is preferably generated by the ⁇ -PD method.
  • Ce is uniformly contained at each cutting position, and Ce is 0.7 when the total content of Y and Ce is 100 mol parts.
  • a Ce: YAG single crystal contained in a molar part or more is obtained. That is, by using the ⁇ -PD method, a single crystal having a segregation coefficient of Ce concentration close to 1.0 can be obtained.
  • the segregation coefficient is obtained by the following formula (1).
  • the single crystal produced by the ⁇ -PD method can bring the segregation coefficient of Ce concentration close to 1.0.
  • a single crystal produced by the CZ method has a segregation coefficient of Ce concentration of about 0.1 to 0.2 (Non-patent Document 1).
  • the single crystal produced by the ⁇ -PD method tends to have a uniform Ce concentration along the decreasing direction as compared with the single crystal produced by the CZ method.
  • the Ce concentration in the crystal can be measured by LA-ICP-MS, EPMA, EDX, or the like.
  • the Ce concentration in the liquid phase can be measured by ICP-AES or ICP-MS.
  • a single crystal manufacturing apparatus 2 for manufacturing a single crystal phosphor includes a crucible 4 installed with an opening facing downward and a refractory furnace covering the periphery thereof. 6.
  • the refractory furnace 6 is further covered with a quartz tube 8, and an induction heating coil 10 for heating the crucible 4 is installed in the vicinity of the center of the quartz tube 8 in the vertical direction.
  • a seed crystal 14 held by a seed crystal holding jig 12 is installed in the opening of the crucible 4. Further, an after heater 16 is installed near the opening of the crucible 4.
  • the single crystal manufacturing apparatus 2 includes a pressure reducing means for reducing the pressure inside the refractory furnace 6, a pressure measuring means for monitoring the pressure reduction, a temperature measuring means for measuring the temperature of the refractory furnace 6, and a refractory furnace. 6 is provided with a gas supply means for supplying an inert gas.
  • the seed crystal 14 is a single crystal cut into a rod shape.
  • the seed crystal is preferably a YAG single crystal containing no additive.
  • the material of the seed crystal holding jig 12 is not particularly limited, dense alumina or the like having little influence at around the use temperature of 1900 ° C. is preferable.
  • the shape and size of the seed crystal holding jig 12 are not particularly limited, but a rod-like shape having a diameter that does not contact the refractory furnace 6 is preferable.
  • the material of the crucible 4 and the after heater 16 is preferably Ir, Mo or the like. Further, it is more preferable to use Ir in order to prevent foreign matter from being mixed into the single crystal due to oxidation of the material of the crucible 4.
  • a substance having a melting point of 1500 ° C. or lower is targeted, Pt can be used as the material of the crucible 4.
  • Pt is used as the material of the crucible 4
  • crystal growth in the atmosphere is possible.
  • a high melting point material exceeding 1500 ° C. is used, since Ir or the like is used as the material of the crucible 4 and the after heater 16, crystal growth is performed only in an inert gas atmosphere such as Ar.
  • the diameter of the opening of the crucible 4 is preferably about 200 ⁇ m to 400 ⁇ m and has a flat shape from the viewpoint of low viscosity of the single crystal melt and wettability with the crucible 4.
  • the material of the refractory furnace 6 is not particularly limited, but alumina is preferable from the viewpoint of heat retention, use temperature, and prevention of impurities from being mixed into crystals.
  • a YAG raw material and Ce which are single crystal raw materials, are placed in the crucible 4 inside the refractory furnace 6 and the inside of the furnace is replaced with an inert gas such as N 2 or Ar.
  • the crucible 4 is heated with an induction heating coil (heating high frequency coil) 10 while flowing an inert gas at 10 to 100 cm 3 / min, and the raw material is melted to obtain a melt.
  • induction heating coil heating high frequency coil
  • the seed crystal 14 When the raw material is sufficiently melted, the seed crystal 14 is gradually approached from the bottom of the crucible, and the seed crystal 14 is brought into contact with the opening at the lower end of the crucible 4. When the melt comes out from the opening at the lower end of the crucible 4, the seed crystal 14 is lowered to start crystal growth.
  • the crystal growth rate is controlled with the temperature manually while observing the state of the solid-liquid interface with a CCD camera or a thermo camera.
  • the temperature gradient can be selected in the range of 10 ° C./mm to 100 ° C./mm by moving the induction heating coil 10.
  • the growth rate of the single crystal can also be selected in the range of 0.01 mm / min to 30 mm / min.
  • the seed crystal is lowered until the melt in the crucible 4 does not come out, and after the seed crystal is separated from the crucible 4, cooling is performed so as not to crack the single crystal. In this way, by making a steep temperature gradient between the crucible 4 and the after-heater 16 and below, it becomes possible to increase the drawing speed of the melt.
  • An inert gas is allowed to flow into the refractory furnace 6 under the same conditions as during heating during the crystal growth and cooling.
  • the atmosphere in the furnace is preferably an inert gas such as N 2 or Ar.
  • the light source device includes at least the phosphor according to the present embodiment and a blue light emitting diode (blue LED) or a blue semiconductor laser (blue LD).
  • blue light emitting diodes and blue semiconductor lasers are collectively referred to as “blue light emitting elements”.
  • the blue light emitting element emits excitation light for exciting the phosphor.
  • the blue light emitting element can be arbitrarily selected from those having a peak wavelength of 405 nm to 460 nm, and in particular, those having a peak wavelength of 425 nm to 460 nm are generally used for white light source applications.
  • the blue light emitting element and the phosphor may be in close contact with each other or may be separated from each other. Moreover, a transparent resin may be provided between the blue light emitting element and the phosphor, or a gap may be provided.
  • heating of the crucible 4 was started and gradually heated for 1 hour until reaching the melting point of the YAG single crystal.
  • a YAG single crystal was used as the seed crystal 14, and the seed crystal 14 was raised to near the melting point of YAG.
  • the tip of the seed crystal 14 was brought into contact with the opening at the lower end of the crucible 4, and the temperature was gradually increased until the melt came out from the opening.
  • the crystal was grown at a rate of 0.20 mm / min while gradually lowering the seed crystal 14.
  • the effective segregation coefficient was calculated by measuring the Ce concentration in the crystal by LA-ICP-MS, measuring the Ce concentration in the liquid phase by ICP-AES, and fitting to the above equation (1).
  • the obtained single crystal was evaluated by the following method.
  • Fluorescence wavelength The fluorescence wavelength was measured at 25 ° C., 200 ° C. and 300 ° C. using an F-7000 type spectrofluorometer manufactured by Hitachi High-Tech Co., Ltd.
  • the measurement mode was a fluorescence spectrum, and the measurement conditions were an excitation wavelength of 450 nm and a photomultiplier voltage of 400V.
  • the internal quantum yield was measured at 25 ° C., 200 ° C. and 300 ° C. using an F-7000 spectrofluorometer manufactured by Hitachi High-Tech Co., Ltd. as a measuring device. .
  • the measurement mode was a fluorescence spectrum, and the measurement conditions were an excitation wavelength of 450 nm and a photomultiplier voltage of 400V.
  • ⁇ int 25 ° C. in Table 1 indicates the ratio of the internal quantum yield of each sample to the internal quantum yield at 25 ° C. of sample number 2 (internal quantum yield ratio).
  • ⁇ int 200 ° C./ ⁇ int 25 ° C. indicates the ratio (temperature quenching resistance) of the internal quantum yield of each sample at 200 ° C. to the internal quantum yield of each sample at 25 ° C.
  • ⁇ int 300 ° C./ ⁇ int 25 ° C. indicates the ratio (temperature quenching resistance) of the internal quantum yield of each sample at 300 ° C. to the internal quantum yield of each sample at 25 ° C.
  • the temperature quenching resistance should be close to 1.
  • the blue light transmittance was measured using a V660 spectrometer manufactured by JASCO Corporation as a measuring device. The measurement wavelength was 460 nm. Table 1 shows the ratio of the blue light transmittance of each sample to the blue light transmittance of Sample No. 2 (blue light transmittance ratio).
  • Ce: YAG single crystals having a Ce content of 0.7 mol part or more are Ce: YAG / Al 2 O 3 eutectics (sample number) having a Ce content of 0.05 to 5 mol parts. Compared with 11 to 15), it was confirmed that the temperature quenching resistance was good.
  • Ce: YAG single crystals (Sample Nos. 1 to 4) having a Ce content of 0.7 mol part or more are Ce: YAG / Al 2 O 3 eutectics (Sample No.) having a Ce content of 0.7 to 5 mol parts. Compared to 13 to 15), it was confirmed that the blue light transmittance ratio was good.
  • the eutectic is inferior to the Ce: YAG single crystal in the blue light transmittance ratio because light scattering occurs at the phase boundary of the eutectic.
  • Ce: YAG single crystals having a Ce content of 0.7 mol part or more were converted into Ce: YAG transparent ceramics (sample numbers 16 to 20) having a Ce content of 0.05 to 5 mol parts. In comparison, it was confirmed that the temperature quenching resistance was good.
  • Ce: YAG single crystals having a Ce content of 0.7 mol part or more were converted into Ce: YAG transparent ceramics (sample numbers 18 to 20) having a Ce content of 0.7 to 5 mol parts. In comparison, it was confirmed that the blue light transmittance ratio was good.
  • Ce: YAG single crystals (Sample Nos. 1 to 4) by the ⁇ -PD method having a Ce content of 0.7 mol part or more are Ce: YAG transparent by the CZ method with a Ce concentration of 0.05 to 0.1 mol part It was confirmed that the internal quantum yield ratio was better than that of ceramics (sample numbers 21 and 22).

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  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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Abstract

Le but de la présente invention est de fournir : un luminophore qui peut posséder un teneur élevée en Ce et qui obtient ainsi un rendement quantique interne élevé, qui peut décaler la longueur d'onde de fluorescence de la fluorescence jaune vers le côté de longues longueurs d'onde et qui peut posséder une propriété d'extinction antithermique favorable et une excellente transmittance de lumière bleue ; et un dispositif de source lumineuse possédant un tel luminophore. La solution selon l'invention porte sur un luminophore constitué par des monocristaux de Ce:YAG contenant 0,7 partie en mole ou plus de Ce par rapport à 100 parties en moles de la teneur combinée en Y et en Ce.
PCT/JP2019/009766 2018-03-23 2019-03-11 Luminophore et dispositif électroluminescent WO2019181618A1 (fr)

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Application Number Priority Date Filing Date Title
DE112019001492.7T DE112019001492T5 (de) 2018-03-23 2019-03-11 Leuchtstoff und lichtquellenvorrichtung
CN201980021037.3A CN111886319A (zh) 2018-03-23 2019-03-11 荧光体以及光源装置
US16/982,968 US11634630B2 (en) 2018-03-23 2019-03-11 Phosphor and light source device
JP2020508233A JPWO2019181618A1 (ja) 2018-03-23 2019-03-11 蛍光体および光源装置

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WO2012105202A1 (fr) * 2011-01-31 2012-08-09 国立大学法人東北大学 Cristal de type grenat pour un scintillateur et détecteur de rayonnement l'utilisant
JP2013043960A (ja) * 2011-08-26 2013-03-04 Furukawa Co Ltd シンチレータ用ガーネット型結晶およびこれを用いる放射線検出器
WO2013161683A1 (fr) * 2012-04-24 2013-10-31 株式会社光波 Phosphore, procédé de fabrication associé et dispositif électroluminescent
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CN111886319A (zh) 2020-11-03
DE112019001492T5 (de) 2021-01-07
US11634630B2 (en) 2023-04-25
US20210017447A1 (en) 2021-01-21

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