WO2019153732A1 - 一种顶发光oled基板及其制备方法、oled显示面板 - Google Patents

一种顶发光oled基板及其制备方法、oled显示面板 Download PDF

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WO2019153732A1
WO2019153732A1 PCT/CN2018/103935 CN2018103935W WO2019153732A1 WO 2019153732 A1 WO2019153732 A1 WO 2019153732A1 CN 2018103935 W CN2018103935 W CN 2018103935W WO 2019153732 A1 WO2019153732 A1 WO 2019153732A1
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layer
substrate
nano
nano silver
prepared
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PCT/CN2018/103935
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French (fr)
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郝鹏
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深圳市华星光电半导体显示技术有限公司
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Publication of WO2019153732A1 publication Critical patent/WO2019153732A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • the present invention relates to the field of display panel manufacturing, and in particular, to a top-emitting OLED substrate, a method for fabricating the same, and an OLED display panel.
  • OLEDs Organic electroluminescent devices
  • OLEDs Organic electroluminescent devices
  • the preparation of OLED devices by evaporation equipment is the mainstream method of current production, but the disadvantages of low utilization rate and poor uniformity of evaporation process materials have been lack of effective solutions.
  • the preparation of OLED film by solution method shows obvious advantages due to its high material utilization rate and low equipment cost.
  • the solution process includes spin coating, printing, printing, etc., in which a solution containing a luminescent material is dropped in a predetermined position at a minute droplet (pl level), and then the solvent is evaporated to remove only the solute (luminescence or
  • IJP Ink-Jet Printing
  • the sub-pixel opening of the substrate is required to have a sufficient width, and a top-emitting OLED is generally used to ensure a sufficient aperture ratio.
  • due to the passage of the line under the ITO there is no flat substrate under the anode ITO, which leads to the unevenness of the surface of the ITO.
  • the ITO surface height difference can actually reach 200 nm. Since the liquid film forming process is a process from liquid injection to dry film formation, the organic material component is deposited toward the depression/lower portion, so that the formed organic film is not uniformly distributed within the s-pixel. Therefore, there is a phenomenon that the ITO surface is uneven in the top-emitting OLED substrate, thereby affecting the uniformity of the thickness of the luminescent layer in the IJP film forming process, thereby affecting the performance of the OLED device.
  • the invention provides a method capable of improving or eliminating the poor flatness of the ITO surface, and avoiding the unevenness of the thickness of the luminescent layer prepared by the IJP due to the substrate, thereby affecting the performance of the OLED device.
  • the invention provides a method for preparing a top-emitting OLED substrate, the method comprising the following steps:
  • Step S1 providing a substrate, on which a buffer layer, a thin film transistor layer, a planarization layer, a pixel definition layer, and an anode layer are sequentially prepared, wherein a surface of the anode layer is formed with a recess;
  • Step S2 printing nano silver ink in the depression of the surface of the anode layer in the form of small droplets of a preset volume
  • Step S3 in a negative pressure environment, the solvent in the nano silver ink is volatilized and removed, and the nano silver is precipitated to form a nano silver compensation block;
  • Step S4 performing annealing treatment on the substrate substrate at a preset temperature, so that the nano silver compensation block is combined with the anode layer and is coplanar to form a flat anode substrate.
  • step S2 before the step S2, the following steps are further included:
  • Step S201 placing nano silver particles of a predetermined particle diameter into a first solvent, and uniformly distributing the nano silver particles in the first solvent to obtain the nano silver ink.
  • the first solvent is a mixture of water, an aromatic hydrocarbon solvent.
  • the concentration of the nano silver ink prepared is between 6% and 60%.
  • the small droplets formed by the nano silver ink have a volume of less than 10-9 ml.
  • the annealing treatment temperature is less than or equal to 250 °C.
  • the present invention also provides a top-emitting OLED substrate, comprising:
  • a base substrate including a display area and a non-display area
  • a buffer layer is prepared on the base substrate
  • An anode layer corresponding to the display region of the base substrate is prepared on a surface of the planarization layer;
  • the surface of the anode layer is formed with a recess, and a nano-silver compensation block combined with the anode layer is disposed in the recessed region, and the nano-silver compensation block forms a coplanar surface with the surface of the anode layer.
  • the nano silver compensation block is obtained by solvent evaporation treatment of the nano silver ink dropped to the recess.
  • the nano-silver compensation block and the anode layer are bonded together by annealing the substrate.
  • the invention also provides an OLED display panel comprising the above-mentioned top-emitting OLED substrate.
  • the beneficial effects of the present invention are: compared with the existing OLED substrate, the top-emitting OLED substrate provided by the present invention, the preparation method thereof, and the OLED display panel, in the process of preparing the top-emitting OLED substrate by preparing nano silver ink,
  • the nano silver ink is dropped into the depression of the anode layer of the OLED substrate in the form of small droplets, and the nano silver compensation block is obtained by solvent evaporation treatment, and then the substrate is annealed to bond the nano silver compensation block to the anode layer.
  • the influence on the preparation of the subsequent light-emitting layer is avoided, thereby improving the performance of the OLED device.
  • FIG. 1 is a topographical view of an upper surface of an anode layer of a conventional OLED substrate sub-pixel
  • FIG. 2 is a flow chart of a method for preparing a top-emitting OLED substrate according to the present invention
  • FIG. 3 is a schematic structural diagram of an OLED display panel according to an embodiment of the present invention.
  • the present invention is directed to the technical problem that the ITO surface is poor in flatness in the preparation process of the OLED substrate, and the luminescent layer prepared by the IJP is uneven in thickness due to the substrate, thereby affecting the performance of the OLED device. Solve the defect.
  • FIG. 1 is a flow chart of a method for fabricating a top-emitting OLED substrate according to the present invention, the method comprising the following steps:
  • Step S1 providing a substrate, on which a buffer layer, a thin film transistor layer, a planarization layer, a pixel definition layer, and an anode layer are sequentially prepared, wherein a surface of the anode layer is formed with a recess;
  • Step S2 printing nano silver ink in the depression of the surface of the anode layer in the form of small droplets of a preset volume
  • Step S3 in a negative pressure environment, the solvent in the nano silver ink is volatilized and removed, and the nano silver is precipitated to form a nano silver compensation block;
  • Step S4 performing annealing treatment on the substrate substrate at a preset temperature, so that the nano silver compensation block is combined with the anode layer and is coplanar to form a flat anode substrate.
  • the nano silver ink needs to be prepared, and the preparation method of the nano silver ink includes the following steps:
  • Step S201 placing nano silver particles of a predetermined particle diameter into a first solvent, and uniformly distributing the nano silver particles in the first solvent to obtain the nano silver ink.
  • the nano silver particles having an average particle diameter of not more than 10 um are first placed in the first solvent to uniformly mix the nano silver particles, and the mixing method may be mechanical stirring, potential exclusion mixing, or the like;
  • the first solvent is water, a mixture of aromatic hydrocarbon solvents, etc.;
  • the nano silver ink is formed, and the concentration of the nano silver ink prepared is between 6% and 60%, preferably, the concentration is between 10% and 50%. between.
  • a buffer layer Forming a buffer layer, a thin film transistor layer, a planarization layer, a pixel defining layer, and an anode layer on the substrate, wherein the pixel defining layer is prepared on a corresponding non-display area of the base substrate, the lining
  • the display area of the base substrate includes pixels, and the pixel includes three sub-pixels, and the pixel definition layer is used to isolate different sub-pixels.
  • the anode layer is prepared corresponding to the display region, wherein a surface of the anode layer is formed with a recess due to a line passing under the anode layer.
  • the ink volume should be less than 1 picoliter (ie, 10-9 ml), and the recess is filled with the small droplets; the substrate is placed under a negative pressure environment, and the nano silver ink is subjected to a negative pressure.
  • the first solvent in the volatilization volatilizes and precipitates nano silver to form the nano silver compensation block.
  • the substrate substrate is subjected to an annealing treatment of not more than 250 ° C, and the nano silver compensation block is combined with the anode layer to form a coplanar surface, that is, a flat anode substrate is formed.
  • the volume of the small droplet formed by the nano silver ink is not excessively large, so as to prevent the recess from flowing to other portions of the anode layer; the operation should be performed in the sub-pixel region to avoid contamination of other regions.
  • the printing method is a common method and is not limited here.
  • an illuminating layer is printed on the surface of the anode layer of the display region using an IJP device, and the luminescent layer formed is uniform in film thickness.
  • FIG. 3 is a schematic structural diagram of a top-emitting OLED substrate provided by the present invention.
  • the top-emitting OLED substrate includes: a substrate 301 including a display area and a non-display area; and a metal light shielding layer 302.
  • a buffer layer 303 is prepared on the surface of the base substrate 301; a thin film transistor layer 320 is prepared on the surface of the buffer layer 303; and a planarization layer 307 is prepared on the thin film transistor layer a 320 surface; a pixel defining layer 308 corresponding to the non-display area of the base substrate 301, prepared on a surface of the planarization layer 307; and an anode layer 309 corresponding to the display area of the base substrate 301
  • a light-emitting layer 310 corresponding to the display region is prepared on the surface of the anode layer 309; a cathode layer 311 is prepared on the light-emitting layer 310; and a thin film encapsulation layer 312 is prepared in the On the cathode layer 311.
  • the thin film transistor layer 320 includes a gate insulating layer 304, a passivation layer 305 prepared on the surface of the gate insulating layer 304, and a film interposed between the gate insulating layer 304 and the passivation layer 305.
  • the surface of the anode layer 309 is formed with a recess. Due to the uneven surface of the anode layer 309, the thickness of the film layer prepared by the light-emitting layer 310 is not uniform, thereby affecting the performance of the OLED display panel.
  • the nano-silver compensation block 313 is disposed in the recessed area, and the nano-silver compensation block 313 can fill the recess to form a coplanar surface with the surface of the anode layer 309, thereby providing a preparation for the subsequent light-emitting layer 310.
  • the flat anode substrate is such that the thickness of the light-emitting layer 310 is uniform throughout.
  • the nano-silver compensation block 313 is obtained by dropping the above-mentioned nano silver ink into the recess and then performing solvent evaporation treatment. Then, the base substrate is subjected to an annealing treatment of not more than 250 ° C to bond the nano silver compensation block 313 and the anode layer 309 together.
  • the present invention also provides an OLED display panel comprising the above-mentioned top-emitting OLED substrate and color film substrate.
  • the top-emitting OLED substrate provided by the present invention Compared with the existing OLED substrate, the top-emitting OLED substrate provided by the present invention, the preparation method thereof, and the OLED display panel, by preparing nano silver ink, in the process of preparing the top-emitting OLED substrate, the nano silver ink is made into a small liquid
  • the droplets are dropped into the depressions of the anode layer of the OLED substrate, and the nano-silver compensation block is obtained by solvent evaporation treatment, and then the substrate is annealed to bond the nano-silver compensation block to the anode layer, thereby obtaining a surface-level OLED.
  • the conductive anode avoids the influence on the preparation of the subsequent light-emitting layer, thereby improving the performance of the OLED device.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种顶发光OLED基板及其制备方法、OLED显示面板，所述制备方法包括：提供一制备有阳极层的衬底基板，所述阳极层表面形成有凹陷（S1）；将纳米银墨水以小液滴的形式打印在所述凹陷处（S2）；在负压环境下，析出所述纳米银墨水中的纳米银，形成纳米银补偿块（S3）；之后进行退火处理，使所述纳米银补偿块与所述阳极层结合并且共平面（S4）。

Description

一种顶发光OLED基板及其制备方法、OLED显示面板 技术领域
本发明涉及显示面板制造领域，尤其涉及一种顶发光OLED基板及其制备方法、OLED显示面板。
 背景技术
有机电致发光器件（OLED）以其自发光、全固态、高对比度等优点，成为近年来最具潜力的新型显示器件。用蒸镀设备制备OLED器件是目前生产的主流方式，但蒸镀工艺材料利用率低，均匀性较差的缺点一直缺少有效的解决方案。溶液法制备OLED薄膜，以其材料利用率高，设备造价低等优点，显示出明显的优势。
而溶液法制程包括旋涂、印刷、打印等方式，其中将含有发光材料的溶液以微小液滴（pl级）的方式滴落在预定位置，然后将溶剂蒸发去除，只留下溶质（发光或功能材料）形成的薄膜的方法简称为IJP（Ink-Jet Printing）。为了保证将Ink成功的滴入子像素（s-pixel）开口内，需要基板的子像素开口有足够的宽度，一般使用顶发光的OLED以保证足够的开口率。但是由于ITO下方有线路经过，导致阳极ITO下方没有平坦的基底，进而导致ITO的表面出现高低不平的现象。
参照图1所示，可以看出一般情况下ITO表面高差实际可达200nm。由于液体成膜制程是由液体注入至干燥成膜的过程，导致有机材料成分会向凹陷处/较低处堆积，使形成的有机膜在s-pixel内不是均匀分布。因此，目前顶发光OLED基板中存在ITO表面不平整现象，从而影响IJP成膜制程中发光层膜厚的均一性，进而影响OLED器件的性能。
 技术问题
本发明提供的一种，能够改善或消除ITO表面平坦性差的状况，避免IJP制备出的发光层因基底原因导致厚度不均，从而影响OLED器件的性能。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种顶发光OLED基板的制备方法，所述方法包括以下步骤：
步骤S1、提供一衬底基板，在所述衬底基板上依次制备缓冲层、薄膜晶体管层、平坦化层、像素定义层以及阳极层，其中，所述阳极层表面形成有凹陷；
步骤S2、将纳米银墨水以预设体积的小液滴的形式打印在所述阳极层表面的所述凹陷处；
步骤S3、在负压环境下，使所述纳米银墨水中的溶剂挥发去除，析出纳米银，形成纳米银补偿块；
步骤S4、对所述衬底基板进行预设温度的退火处理，使所述纳米银补偿块与所述阳极层结合并共平面，形成平坦的阳极基底。
根据本发明一实施例，在所述步骤S2之前，还包括以下步骤：
步骤S201、将预设粒径的纳米银颗粒放入第一溶剂中，使所述纳米银颗粒均匀分布于所述第一溶剂中，得到所述纳米银墨水。
根据本发明一实施例，所述第一溶剂为水、芳香烃类溶剂的混合物。
根据本发明一实施例，制备的所述纳米银墨水的浓度在6%~60%之间。
根据本发明一实施例，所述纳米银墨水形成的所述小液滴的体积小于10-9毫升。
根据本发明一实施例，所述步骤S4中，所述退火处理的温度小于等于250℃。
本发明还提供一种顶发光OLED基板，包括：
衬底基板，所述衬底基板包括显示区域与非显示区域；
缓冲层，制备于所述衬底基板上；
薄膜晶体管层，制备于所述缓冲层表面；
平坦化层，制备于所述薄膜晶体管层表面；
像素定义层，对应所述衬底基板的所述非显示区域，制备于所述平坦化层表面；以及
阳极层，对应所述衬底基板的所述显示区域，制备于所述平坦化层表面；
其中，所述阳极层表面形成有凹陷，在所述凹陷区域设置有与所述阳极层结合的纳米银补偿块，且所述纳米银补偿块与所述阳极层表面形成共平面。
根据本发明一实施例，所述纳米银补偿块是通过滴到所述凹陷处的纳米银墨水经过溶剂挥发处理后得到的。
根据本发明一实施例，所述纳米银补偿块与所述阳极层是通过对所述衬底基板进行退火处理结合在一起的。
本发明还提供一种OLED显示面板，包括上述顶发光OLED基板。
 有益效果
本发明的有益效果为：相较于现有的OLED基板，本发明提供的顶发光OLED基板及其制备方法、OLED显示面板，通过制备纳米银墨水，在该顶发光OLED基板制备的过程中，将纳米银墨水以小液滴的形式滴入OLED基板阳极层的凹陷处，经过溶剂挥发处理得到纳米银补偿块，再对基板进行退火处理使所述纳米银补偿块结合到所述阳极层上，从而得到表面平整的OLED 导电阳极，避免对后续发光层制备的影响，进而提高OLED器件的性能。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有OLED基板子像素的阳极层上表面形貌图；
图2为本发明提供的顶发光OLED基板的制备方法流程图；
图3为本发明实施例提供的OLED显示面板结构示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有的OLED基板在制备过程中，ITO表面因平坦性较差，使IJP制备出的发光层因基底原因导致厚度不均，从而影响OLED器件的性能的技术问题，本实施例能够解决该缺陷。
参考图1，为本发明提供的顶发光OLED基板的制备方法流程图，所述方法包括以下步骤：
步骤S1、提供一衬底基板，在所述衬底基板上依次制备缓冲层、薄膜晶体管层、平坦化层、像素定义层以及阳极层，其中，所述阳极层表面形成有凹陷；
步骤S2、将纳米银墨水以预设体积的小液滴的形式打印在所述阳极层表面的所述凹陷处；
步骤S3、在负压环境下，使所述纳米银墨水中的溶剂挥发去除，析出纳米银，形成纳米银补偿块；
步骤S4、对所述衬底基板进行预设温度的退火处理，使所述纳米银补偿块与所述阳极层结合并共平面，形成平坦的阳极基底。
具体地，首先需要制备所述纳米银墨水，所述纳米银墨水的制备方法包括以下步骤：
步骤S201、将预设粒径的纳米银颗粒放入第一溶剂中，使所述纳米银颗粒均匀分布于所述第一溶剂中，得到所述纳米银墨水。
具体地，先将平均粒径不超过10um的所述纳米银颗粒放入所述第一溶剂中，使所述纳米银颗粒混合均匀，混合方法可以是机械搅拌、电位排斥法混合等；所述第一溶剂为水、芳香烃类溶剂的混合物等；形成所述纳米银墨水，制备的所述纳米银墨水的浓度在6%~60%之间，优选的，浓度在10%~50%之间。
在所述衬底基板上依次制备缓冲层、薄膜晶体管层、平坦化层、像素定义层以及阳极层，其中，所述像素定义层制备于所述衬底基板对应的非显示区域，所述衬底基板的显示区域包括像素，一所述像素包括三个子像素，所述像素定义层用于隔离不同所述子像素。所述阳极层对应所述显示区域制备，其中，由于所述阳极层下方有线路经过，导致所述阳极层表面形成有凹陷。
使用高精度、小喷嘴的打印机将所述纳米银墨水以小液滴的形式打印在对应所述子像素的所述阳极层表面的所述凹陷处，优选的，所述打印机喷出的每滴墨水体积应小于1皮升（即10-9毫升），用所述小液滴填满所述凹陷；再将所述衬底基板置于负压环境下，经负压使所述纳米银墨水中的所述第一溶剂挥发，析出纳米银，形成所述纳米银补偿块。最后对所述衬底基板进行不超过250℃的退火处理，使所述纳米银补偿块与所述阳极层结合，并形成共平面，即形成平坦的阳极基底。其中，所述纳米银墨水形成的所述小液滴体积不宜过大，以免溢出所述凹陷流至所述阳极层的其他部位；操作应对准子像素区域内进行，避免污染其他区域。打印方式为常见方式，此处不做限定。
之后，使用IJP设备在所述显示区域的所述阳极层表面打印发光层，形成的所述发光层膜厚均一。
参照图3所示，为本发明提供的顶发光OLED基板结构示意图，所述顶发光OLED基板包括：衬底基板301，所述衬底基板301包括显示区域与非显示区域；金属遮光层302，制备于所述衬底基板301表面；缓冲层303，制备于所述衬底基板301表面；薄膜晶体管层320，制备于所述缓冲层303表面；平坦化层307，制备于所述薄膜晶体管层320表面；像素定义层308，对应所述衬底基板301的所述非显示区域，制备于所述平坦化层307表面；以及阳极层309，对应所述衬底基板301的所述显示区域，制备于所述平坦化层307表面；发光层310，对应所述显示区域制备于所述阳极层309表面；阴极层311，制备于所述发光层310上；薄膜封装层312，制备于所述阴极层311上。其中，所述薄膜晶体管层320包括栅绝缘层304、制备于所述栅绝缘层304表面的钝化层305、贯穿于所述栅绝缘层304与所述钝化层305之间间隔设置的薄膜晶体管306。
其中，所述阳极层309表面形成有凹陷，由于所述阳极层309表面不平整，会使所述发光层310制备的膜层厚度不均一，从而影响所述OLED显示面板的性能。本发明在所述凹陷区域设置有纳米银补偿块313，所述纳米银补偿块313可以填充所述凹陷，与所述阳极层309表面形成共平面，为后续所述发光层310的制备提供了平整的阳极衬底，使得所述发光层310各处膜厚均一。所述纳米银补偿块313是由上述纳米银墨水滴到所述凹陷处，再经过溶剂挥发处理后得到的。之后对所述衬底基板进行不超过250℃的退火处理，使所述纳米银补偿块313与所述阳极层309结合在一起。
本发明还提供一种OLED显示面板，所述OLED显示面板包括上述顶发光OLED基板与彩膜基板。
相较于现有的OLED基板，本发明提供的顶发光OLED基板及其制备方法、OLED显示面板，通过制备纳米银墨水，在该顶发光OLED基板制备的过程中，将纳米银墨水以小液滴的形式滴入OLED基板阳极层的凹陷处，经过溶剂挥发处理得到纳米银补偿块，再对基板进行退火处理使所述纳米银补偿块结合到所述阳极层上，从而得到表面平整的OLED 导电阳极，避免对后续发光层制备的影响，进而提高OLED器件的性能。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

  1. 一种顶发光OLED基板的制备方法，其中，所述方法包括以下步骤：
    步骤S1、提供一衬底基板，在所述衬底基板上依次制备缓冲层、薄膜晶体管层、平坦化层、像素定义层以及阳极层，其中，所述阳极层表面形成有凹陷；
    步骤S2、将纳米银墨水以预设体积的小液滴的形式打印在所述阳极层表面的所述凹陷处；
    步骤S3、在负压环境下，使所述纳米银墨水中的溶剂挥发去除，析出纳米银，形成纳米银补偿块；
    步骤S4、对所述衬底基板进行预设温度的退火处理，使所述纳米银补偿块与所述阳极层结合并共平面，形成平坦的阳极基底。
  2. 根据权利要求1所述的制备方法，其中，在所述步骤S2之前，还包括以下步骤：
    步骤S201、将预设粒径的纳米银颗粒放入第一溶剂中，使所述纳米银颗粒均匀分布于所述第一溶剂中，得到所述纳米银墨水。
  3. 根据权利要求2所述的制备方法，其中，所述第一溶剂为水、芳香烃类溶剂的混合物。
  4. 根据权利要求2所述的制备方法，其中，制备的所述纳米银墨水的浓度在6%~60%之间。
  5. 根据权利要求1所述的制备方法，其中，所述纳米银墨水形成的所述小液滴的体积小于10-9毫升。
  6. 根据权利要求1所述的制备方法，其中，所述步骤S4中，所述退火处理的温度小于等于250℃。
  7. 一种顶发光OLED基板，其包括：
    衬底基板，所述衬底基板包括显示区域与非显示区域；
    缓冲层，制备于所述衬底基板上；
    薄膜晶体管层，制备于所述缓冲层表面；
    平坦化层，制备于所述薄膜晶体管层表面；
    像素定义层，对应所述衬底基板的所述非显示区域，制备于所述平坦化层表面；以及
    阳极层，对应所述衬底基板的所述显示区域，制备于所述平坦化层表面；
    其中，所述阳极层表面形成有凹陷，在所述凹陷区域设置有与所述阳极层结合的纳米银补偿块，且所述纳米银补偿块与所述阳极层表面形成共平面。
  8. 根据权利要求7所述的顶发光OLED基板，其中，所述纳米银补偿块是通过滴到所述凹陷处的纳米银墨水经过溶剂挥发处理后得到的。
  9. 根据权利要求7所述的顶发光OLED基板，其中，所述纳米银补偿块与所述阳极层是通过对所述衬底基板进行退火处理结合在一起的。
  10. 一种OLED显示面板，其中，包括采用权利要求7所述的顶发光OLED基板。
PCT/CN2018/103935 2018-02-07 2018-09-04 一种顶发光oled基板及其制备方法、oled显示面板 WO2019153732A1 (zh)

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