WO2019150910A1 - MATÉRIAU FLUORESCENT DE β-SIALON, PROCÉDÉ POUR SA PRODUCTION ET DISPOSITIF ÉLECTROLUMINESCENT - Google Patents

MATÉRIAU FLUORESCENT DE β-SIALON, PROCÉDÉ POUR SA PRODUCTION ET DISPOSITIF ÉLECTROLUMINESCENT Download PDF

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WO2019150910A1
WO2019150910A1 PCT/JP2019/000579 JP2019000579W WO2019150910A1 WO 2019150910 A1 WO2019150910 A1 WO 2019150910A1 JP 2019000579 W JP2019000579 W JP 2019000579W WO 2019150910 A1 WO2019150910 A1 WO 2019150910A1
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Prior art keywords
sialon phosphor
value
type sialon
emitting device
light emitting
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PCT/JP2019/000579
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English (en)
Japanese (ja)
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慶太 小林
真太郎 渡邉
秀幸 江本
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デンカ株式会社
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Publication of WO2019150910A1 publication Critical patent/WO2019150910A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/64—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Definitions

  • the present invention relates to a ⁇ -type sialon phosphor, a method for producing the same, and a light emitting device.
  • a light-emitting device that combines a light-emitting element that emits primary light and a phosphor that absorbs primary light and emits secondary light is expected to have low power consumption, downsizing, high brightness, and wide color reproducibility. It is attracting attention as a next-generation light-emitting device, and is actively researched and developed. For example, there has been proposed a light emitting device that combines a light emitting element that emits blue to violet short-wavelength visible light and a phosphor, and obtains white light by mixing light emitted from the light emitting element and light converted in wavelength by the phosphor. (Patent Document 1).
  • Patent Document 2 A method of pulverizing a fired product and then acid-treating the powdered fired product is known (Patent Document 2). Also known is a method of performing heat treatment in a nitrogen atmosphere and heat treatment in a rare gas atmosphere after firing the raw material (Patent Document 3).
  • ⁇ -sialon phosphors manufactured by known methods such as Patent Documents 2 and 3 are not sufficiently durable (particularly heat resistance) as they are, and the ⁇ -sialon phosphors are used as light emitting devices. When used for the above, there is a problem that reliability is lowered.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a ⁇ -sialon phosphor capable of producing a highly reliable light-emitting device and a method for producing the same. Another object of the present invention is to provide a highly reliable light-emitting device.
  • the present inventors have endured to give a reliable light-emitting device by heat-treating a ⁇ -sialon phosphor under specific conditions to modify the surface.
  • the present inventors have found that a ⁇ -sialon phosphor excellent in properties (particularly heat resistance) can be obtained, and has completed the present invention.
  • the present inventors have found that in an X-ray photoelectron spectrum using an Al—K ⁇ ray as an excitation X-ray source, The inventors have found that the ratio of photoelectron intensities (Counts / s) at the binding energy at two positions is in a specific range, and have completed the present invention.
  • the ⁇ -type sialon phosphor according to the embodiment of the present invention has an X-ray photoelectron intensity when the binding energy is 103.5 eV in an X-ray photoelectron spectroscopy spectrum using Al—K ⁇ rays as an excitation X-ray source.
  • the photoelectron intensity when the energy is 102.0 eV is Y, 2.5> Y / X is satisfied.
  • the light emitting device according to the embodiment of the present invention includes the ⁇ -type sialon phosphor.
  • ⁇ -type sialon phosphor in a state where 0.5% by mass or more of water coexists with the total mass of the ⁇ -type sialon phosphor and water, 150 ° C. or more.
  • the ⁇ -type sialon phosphor is heat-treated at a temperature of
  • a ⁇ -type sialon phosphor capable of producing a highly reliable light emitting device and a method for producing the same.
  • a highly reliable light-emitting device can be provided.
  • FIG. 2 is an X-ray photoelectron spectrum of ⁇ -sialon phosphors of Example 1 and Comparative Example 1.
  • FIG. 2 is a spectrum of a value (KM value) of a Kubelka-Munk function measured by FT-IR of the ⁇ -type sialon phosphors of Example 1 and Comparative Examples 1 and 2.
  • ⁇ -sialon phosphor herein, Al to Si position of ⁇ -type silicon nitride (Si 3 N 4) is a solid solution O was partially substituted N position, the general formula: Si 6 it can be represented by the -z Al z O z N 8- z. In the formula, z is 0 to 4.2.
  • the ⁇ -type sialon phosphor is excited in a wide wavelength range from ultraviolet light to visible light and emits green light.
  • the X-ray photoelectron spectrum using Al—K ⁇ ray as an excitation X-ray source has a photoelectron intensity of X and a bond energy of 102.0 eV when the bond energy is 103.5 eV.
  • the photoelectron intensity at this time is Y, 2.5> Y / X is satisfied. If 2.5 ⁇ Y / X, the durability of the ⁇ -type sialon phosphor is not sufficiently improved, and thus a highly reliable light-emitting device cannot be obtained.
  • a functional group or the like can be specified from the value of the binding energy of each photoelectron intensity.
  • the photoelectron intensity when the bond energy is 103.5 eV indicates a Si—N bond
  • the photoelectron intensity when the bond energy is 102.0 eV indicates the presence of a Si—O bond.
  • the ratio of Si—O bonds to Si—N bonds increases, so that the surface of ⁇ -sialon phosphor is hydrolyzed and an oxide layer is sufficiently formed (ie, It is considered that surface modification is sufficiently performed). If the oxide layer is sufficiently formed on the surface of the ⁇ -type sialon phosphor, further hydrolysis is suppressed. As a result, since the generation of ionic substances such as ammonium ions is suppressed when the temperature of the ⁇ -sialon phosphor increases in the light-emitting device, the reliability of the light-emitting device is improved.
  • X-ray photoelectron spectroscopy can be obtained by X-ray photoelectron spectroscopy (XPS).
  • the measurement conditions are as follows. Measuring device: X-ray photoelectron spectrometer (PHI5000 VersaProbeII manufactured by ULVAC-PHI) Output: 15kV-50W Measurement area: 200 ⁇ m ⁇ Pass energy: 187 eV Step size: 50ms
  • the ⁇ -type sialon phosphor of the present embodiment is When the KM value when the wave number is 3650 cm ⁇ 1 is A and the KM value when the wave number is 2600 cm ⁇ 1 is D, 0.15 ⁇ A / D is preferably satisfied.
  • the “value of the Kubelka-Munk function” is a function that converts the reflectance of a substance into a value that serves as an index of absorption specific to the substance, and the absorption coefficient is divided by the scattering coefficient (absorption Coefficient / scattering coefficient).
  • the functional group and the like can be specified from the wave number value.
  • the KM value when the wave number is 3650 cm ⁇ 1 indicates a Si—OH bond
  • the KM value when the wave number is 2600 cm ⁇ 1 indicates a peak derived from the structure of the ⁇ -type sialon phosphor.
  • the ratio of Si—OH bonds in the structure of the ⁇ -type sialon phosphor increases, so that the surface of the ⁇ -type sialon phosphor is hydrolyzed and an oxide layer is sufficiently formed. (That is, the surface modification is sufficiently performed). As a result, further hydrolysis of the ⁇ -type sialon phosphor is suppressed. As a result, when the temperature of the ⁇ -type sialon phosphor rises in the light-emitting device, ionic substances such as ammonium ions are less likely to be generated. Reliability is improved.
  • the spectrum of the Kubelka-Munk function value can be obtained by Fourier transform infrared absorption analysis (FT-IR). The measurement was performed using Spectrum One manufactured by PerkinElmer. The measurement sample may be pelletized without diluting the ⁇ -type sialon phosphor.
  • the ⁇ -type sialon phosphor of the present embodiment has a KM value of A and a wave number of 3400 cm ⁇ 1 when the wave number is 3650 cm ⁇ 1 in the spectrum of the Kubelka-Munk function value (KM value) using FT-IR.
  • the KM value at that time is B, it is preferable that 0.2 ⁇ A / B is satisfied.
  • the KM value when the wave number is 3400 cm ⁇ 1 indicates the OH bond of the adsorbed water.
  • the ratio of Si—OH bonds in the oxide layer is higher than the O—H bonds in the adsorbed water, so that the surface of the ⁇ -type sialon phosphor is hydrolyzed and the oxide layer becomes It is thought that it is fully formed. Therefore, when the temperature of the ⁇ -sialon phosphor increases in the light emitting device, it becomes difficult to generate ionic substances such as ammonium ions, and the reliability of the light emitting device is improved.
  • the ⁇ -type sialon phosphor of this embodiment has a KM value of C and a wave number of 3400 cm ⁇ 1 when the wave number is 3200 cm ⁇ 1 in the spectrum of the Kubelka-Munk function value (KM value) using FT-IR.
  • the KM value at that time is B, it is preferable to satisfy 0.7 ⁇ C / B.
  • the KM value when the wave number is 3200 cm ⁇ 1 indicates the Al—OH bond of the oxide layer.
  • the ratio of Al—OH bonds in the oxide layer is higher than in the O—H bonds of the adsorbed water, so that the surface of the ⁇ -type sialon phosphor is hydrolyzed and the oxide layer becomes It is thought that it is fully formed. Therefore, when the temperature of the ⁇ -sialon phosphor increases in the light emitting device, it becomes difficult to generate ionic substances such as ammonium ions, and the reliability of the light emitting device is improved.
  • the ⁇ -type sialon phosphor according to the present embodiment having the above-described features has a temperature of 150 ° C. or higher in a state where 0.5% by mass or more of water is present together with the total mass of the ⁇ -type sialon phosphor and water. It can be manufactured by heat-treating the ⁇ -type sialon phosphor at a temperature. When the amount of coexisting water is less than 0.5% by mass or the heating temperature is less than 150 ° C., the surface of the ⁇ -sialon phosphor is not sufficiently hydrolyzed, and the oxide layer is not sufficiently formed.
  • the pressure conditions during the heat treatment are not particularly limited, it is preferable to perform the heat treatment under a gauge pressure of 0.05 MPa or more.
  • the pressure conditions as described above the surface of the ⁇ -sialon phosphor can be efficiently hydrolyzed.
  • a method for performing the heat treatment under such a pressure condition is not particularly limited.
  • a heat treatment may be performed in a sealed state using a sealed container.
  • the ⁇ -sialon phosphor before heat treatment is not particularly limited as long as it is obtained by a known method. Specifically, the ⁇ -sialon phosphor before heat treatment is obtained by firing a mixed raw material powder containing silicon nitride, aluminum nitride, and an optically active element compound such as europium oxide. It can be obtained by grinding. In addition, the ⁇ -sialon phosphor before the heat treatment may be heat-treated in an acid treatment or an inert atmosphere as necessary. Moreover, it is also possible to use a commercially available product as the ⁇ -type sialon phosphor before the heat treatment.
  • the above heat treatment it may be further heat-treated at 100 ° C. or higher, preferably 100 to 600 ° C. in the atmosphere.
  • adsorbed water and crystal water of the ⁇ -type sialon phosphor can be removed, so that the reliability of the light emitting device is improved.
  • the ⁇ -sialon phosphor of the present embodiment thus obtained is useful for use in a light-emitting device because it is difficult for ionic substances such as ammonium ions to be generated when the temperature in the light-emitting device rises. .
  • the light emitting device of the present embodiment includes the ⁇ -type sialon phosphor.
  • the ⁇ -type sialon phosphor is generally used for a light emitting member.
  • the light emitting member can be obtained by mixing a ⁇ -type sialon phosphor with a sealing material (for example, silicone resin) and curing.
  • the light emitting member may contain a phosphor other than the ⁇ -type sialon phosphor.
  • the light emitting device of this embodiment can include various light emitting elements.
  • the light emitting element is not particularly limited, but is preferably an ultraviolet LED or a blue LED that emits light having a wavelength of 240 to 480 nm, and more preferably a blue LED that emits light having a wavelength of 440 to 470 nm.
  • a white light emitting device can be obtained by combining the ⁇ -type sialon phosphor with an ultraviolet LED or a blue LED.
  • the light emitting device of the present embodiment having the above-described features includes a ⁇ -sialon phosphor that hardly generates an ionic substance such as ammonium ion when the temperature in the light emitting device rises. Is expensive.
  • Example 1 95% by mass of ⁇ -type sialon phosphor (DEN-GR GR-SW529B) and 5% by mass of ion-exchanged water were mixed. Next, 20 g of the mixture was put into a SUS316 container (50 cc) lined with Teflon (registered trademark) on the inside, and then heat-treated at a temperature of 200 ° C. for 168 hours in a sealed state. It was 1.62 MPa when the gauge pressure in the container at the time of heat processing was measured.
  • SUS316 container 50 cc
  • Teflon registered trademark
  • the ⁇ -sialon phosphor after the heat treatment was passed through a nylon sieve (mesh 150 ⁇ m) while applying ion-exchanged water, and then filtered using a filter paper having a pore size of 10 ⁇ m or less.
  • the filter cake was washed with 3 L of ion-exchanged water, filtered again, and then dried at 80 ° C. for 25 hours, thereby obtaining the ⁇ -type sialon phosphor of Example 1.
  • Example 2 A ⁇ -sialon phosphor of Example 2 was obtained by performing the same treatment as in Example 1 except that the heat treatment was performed at 200 ° C. for 48 hours. In addition, it was 1.62 MPa when the gauge pressure in the container at the time of heat processing was measured.
  • Example 3 The ⁇ -sialon phosphor of Example 3 was further heat-treated at 150 ° C. for 5 hours at atmospheric pressure in the atmosphere to obtain the ⁇ -sialon phosphor of Example 3.
  • Example 4 The ⁇ -sialon phosphor of Example 4 was further heat-treated at 80 ° C. for 5 hours in the atmosphere at atmospheric pressure to obtain the ⁇ -sialon phosphor of Example 4.
  • Example 5 The ⁇ type sialon phosphor of Example 5 was obtained by performing the treatment under the same conditions as in Example 1 except that the heat treatment was performed at 150 ° C. for 48 hours. In addition, it was 0.52 MPa when the gauge pressure at the time of heat processing was measured.
  • Example 6 The treatment was carried out under the same conditions as in Example 2 except that 99.5% by mass of ⁇ -type sialon phosphor (GR-SW529B manufactured by Denka Co., Ltd.) and 0.5% by mass of ion-exchanged water were mixed. The ⁇ -type sialon phosphor of Example 6 was obtained. In addition, it was 0.68 MPa when the gauge pressure at the time of heat processing was measured.
  • ⁇ -type sialon phosphor GR-SW529B manufactured by Denka Co., Ltd.
  • Comparative Example 1 A ⁇ -sialon phosphor before heat treatment (GR-SW529B manufactured by Denka Co., Ltd.) was used as Comparative Example 1.
  • Comparative Example 2 A ⁇ -type sialon phosphor (GR-SW529B manufactured by Denka Co., Ltd.) was heat-treated at 200 ° C. for 168 hours in the atmosphere at atmospheric pressure. Next, the ⁇ -sialon phosphor after the heat treatment was passed through a nylon sieve (mesh 150 ⁇ m) while applying ion-exchanged water, and then filtered using a filter paper having a pore size of 10 ⁇ m or less. The filter cake was washed with 3 L of ion-exchanged water, filtered again, and then dried at 80 ° C. for 25 hours to obtain the ⁇ -sialon phosphor of Comparative Example 2.
  • a nylon sieve mesh 150 ⁇ m
  • Comparative Example 3 A ⁇ -sialon phosphor of Comparative Example 3 was obtained by performing the treatment under the same conditions as in Example 1 except that the heat treatment was performed at 100 ° C. for 48 hours. In addition, it was 0.13 MPa when the gauge pressure at the time of heat processing was measured.
  • Comparative Example 4 A ⁇ -sialon phosphor of Comparative Example 4 was obtained by performing the treatment under the same conditions as in Example 1 except that the heat treatment was performed at 50 ° C. for 48 hours. In addition, it was 0.02 MPa when the gauge pressure at the time of heat processing was measured.
  • Comparative Example 5 Comparative Example 5 was carried out under the same conditions as in Example 2 except that ⁇ -sialon phosphor (GR-SW529B manufactured by Denka Co., Ltd.) was not mixed with water and ⁇ -sialon phosphor 20g was used. ⁇ -sialon phosphor was obtained. In addition, it was 0.06 MPa when the gauge pressure at the time of heat processing was measured.
  • ⁇ -sialon phosphor GR-SW529B manufactured by Denka Co., Ltd.
  • the ⁇ -type sialon phosphors obtained in the above examples and comparative examples were subjected to X-ray photoelectron spectroscopic analysis, Fourier transform infrared absorption analysis, and reliability evaluation. X-ray photoelectron spectroscopic analysis and Fourier transform infrared absorption analysis were performed under the above-described conditions. The reliability evaluation was performed as follows.
  • a light emitting element LED
  • the mixture was injected from the microsyringe so as to cover the light emitting element and cured at 150 ° C. Then, it was set as the LED package by performing 110 degreeC x 10-hour post-cure and sealing.
  • a light emitting element having a light emission peak wavelength of 448 nm and a size of 1.0 mm ⁇ 0.5 mm was used.
  • the LED package connected to the DC stabilized power supply was placed in a constant temperature and humidity chamber at 85 ° C. and 85% RH, and exposed for 1000 hours in a state of being turned on by energizing at 90 mA.
  • the total luminous flux of the LED package before and after exposure was measured, and the total luminous flux retention rate of the LED package after exposure was calculated. If the total luminous flux retention is 93% or more, it can be determined that the reliability is high.
  • Table 2 Each evaluation result is shown in Table 2.
  • FIG. 2 shows spectra of the Kubelka-Munk function values (KM values) of the ⁇ -type sialon phosphors of Example 1 and Comparative Examples 1 and 2.
  • the ⁇ -sialon phosphors of Examples 1 to 6 satisfy 2.5> Y / X, and a highly reliable LED package with a total luminous flux retention rate of 93% or more can be obtained. It was. On the other hand, since the ⁇ -sialon phosphor of Comparative Example 1 was not heat-treated, the oxide layer was not sufficiently formed on the surface, and 2.5 ⁇ Y / X (corresponding to the Si—N bond). The proportion of Si—O bonds was reduced). As a result, this ⁇ -type sialon phosphor is considered to generate ionic substances such as ammonium ions when the temperature rises, and the total luminous flux retention (reliability) of the LED package is considered to have decreased.
  • these ⁇ -type sialon phosphors do not have a sufficient oxide layer on the surface, and 2.5 ⁇ Y / X (the ratio of Si—O bonds to Si—N bonds is low), and LED It is thought that the total luminous flux retention rate (reliability) of the package was lowered.
  • Example 2 and Example 3 were compared, the total luminous flux retention (reliability) of the LED package was improved by further heat treatment in the atmosphere at a temperature of 100 ° C. or higher after the heat treatment. This is presumably because the adsorbed water of the ⁇ -type sialon phosphor was removed by further heat treatment.
  • the KM value B indicating the OH bond of the adsorbed water decreased and the values of A / B and C / B increased.
  • the heat treatment temperature was less than 100 ° C. as in Example 4, the effect of improving the total luminous flux retention rate (reliability) of the LED package was not sufficiently obtained.
  • a ⁇ -type sialon phosphor capable of producing a highly reliable light-emitting device and a method for producing the same.
  • a highly reliable light-emitting device can be provided.
  • the ⁇ -sialon phosphor of the present invention can be used in various light emitting devices such as a white light emitting device and a colored light emitting device.
  • the white light emitting device include a liquid crystal display, a backlight of a liquid crystal panel, an illumination device, a signal device, and an image display device.
  • the ⁇ -sialon phosphor and the light emitting device of the present invention can also be used for projector applications.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)

Abstract

Ce matériau fluorescent de ß-sialon satisfait à 2,5 > Y/X, X étant l'intensité de photoélectrons à une énergie de liaison de 103,5 eV dans un spectre de photoélectrons induits par rayons X obtenu à l'aide d'un rayonnement Al-Kα en tant que source de rayons X d'excitation et Y étant l'intensité de photoélectrons à une énergie de liaison de 102,0 eV.
PCT/JP2019/000579 2018-02-02 2019-01-10 MATÉRIAU FLUORESCENT DE β-SIALON, PROCÉDÉ POUR SA PRODUCTION ET DISPOSITIF ÉLECTROLUMINESCENT WO2019150910A1 (fr)

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JP2013241478A (ja) * 2010-09-09 2013-12-05 Denki Kagaku Kogyo Kk β型サイアロン及び発光装置
JP2014197635A (ja) * 2013-03-29 2014-10-16 三菱化学株式会社 発光装置と、それに用いるβサイアロン蛍光体
JP2014221890A (ja) * 2013-05-14 2014-11-27 三菱化学株式会社 蛍光体、蛍光体含有組成物、発光装置、画像表示装置及び照明装置
JP2015224339A (ja) * 2014-05-30 2015-12-14 株式会社東芝 蛍光体、その製造方法及び発光装置
WO2016117623A1 (fr) * 2015-01-21 2016-07-28 三菱化学株式会社 Luminophore fritté, dispositif électroluminescent, dispositif d'éclairage, phare de véhicule et procédé de fabrication de luminophore fritté
WO2018003848A1 (fr) * 2016-06-30 2018-01-04 デンカ株式会社 Corps fluorescent, et dispositif luminescent
WO2019017394A1 (fr) * 2017-07-19 2019-01-24 三菱ケミカル株式会社 Phosphore de nitrure et procédé de production de phosphore de nitrure

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Publication number Priority date Publication date Assignee Title
KR101213298B1 (ko) * 2007-10-10 2012-12-18 우베 고산 가부시키가이샤 β-사이알론 형광체 분말 및 그 제조 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013241478A (ja) * 2010-09-09 2013-12-05 Denki Kagaku Kogyo Kk β型サイアロン及び発光装置
WO2013073598A1 (fr) * 2011-11-15 2013-05-23 三菱化学株式会社 Phosphore de nitrure et son procédé de production
JP2014197635A (ja) * 2013-03-29 2014-10-16 三菱化学株式会社 発光装置と、それに用いるβサイアロン蛍光体
JP2014221890A (ja) * 2013-05-14 2014-11-27 三菱化学株式会社 蛍光体、蛍光体含有組成物、発光装置、画像表示装置及び照明装置
JP2015224339A (ja) * 2014-05-30 2015-12-14 株式会社東芝 蛍光体、その製造方法及び発光装置
WO2016117623A1 (fr) * 2015-01-21 2016-07-28 三菱化学株式会社 Luminophore fritté, dispositif électroluminescent, dispositif d'éclairage, phare de véhicule et procédé de fabrication de luminophore fritté
WO2018003848A1 (fr) * 2016-06-30 2018-01-04 デンカ株式会社 Corps fluorescent, et dispositif luminescent
WO2019017394A1 (fr) * 2017-07-19 2019-01-24 三菱ケミカル株式会社 Phosphore de nitrure et procédé de production de phosphore de nitrure

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