WO2019138456A1 - 活性ガス生成装置 - Google Patents
活性ガス生成装置 Download PDFInfo
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- WO2019138456A1 WO2019138456A1 PCT/JP2018/000254 JP2018000254W WO2019138456A1 WO 2019138456 A1 WO2019138456 A1 WO 2019138456A1 JP 2018000254 W JP2018000254 W JP 2018000254W WO 2019138456 A1 WO2019138456 A1 WO 2019138456A1
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- electrode
- active gas
- space
- gas
- discharge
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- 239000002184 metal Substances 0.000 claims description 122
- 239000000498 cooling water Substances 0.000 claims description 36
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 7
- 230000003213 activating effect Effects 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 27
- 239000007789 gas Substances 0.000 description 388
- 238000001816 cooling Methods 0.000 description 53
- 238000010926 purge Methods 0.000 description 38
- 238000005516 engineering process Methods 0.000 description 29
- 238000009434 installation Methods 0.000 description 25
- 230000002159 abnormal effect Effects 0.000 description 22
- 239000002994 raw material Substances 0.000 description 18
- 125000006850 spacer group Chemical group 0.000 description 18
- 238000000034 method Methods 0.000 description 17
- 230000002093 peripheral effect Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 238000007789 sealing Methods 0.000 description 12
- 230000008020 evaporation Effects 0.000 description 10
- 238000001704 evaporation Methods 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 10
- 230000005684 electric field Effects 0.000 description 9
- 239000000470 constituent Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000010276 construction Methods 0.000 description 7
- 238000011109 contamination Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000000149 penetrating effect Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000000994 depressogenic effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241000519995 Stachys sylvatica Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 235000019000 fluorine Nutrition 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2418—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the electrodes being embedded in the dielectric
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
- B01J12/002—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor carried out in the plasma state
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32348—Dielectric barrier discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J2219/0805—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
- B01J2219/0807—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes
- B01J2219/0809—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes employing two or more electrodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0803—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J2219/0805—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
- B01J2219/0807—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes
- B01J2219/0815—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges involving electrodes involving stationary electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Definitions
- the present invention relates to an active gas generating device in which two electrodes are disposed in parallel, a high voltage is applied between the two electrodes, and an active gas is obtained by energy generated discharge.
- An active gas generator for obtaining an active gas with energy that generates a discharge phenomenon in a discharge space between two electrodes by placing two electrodes in parallel and applying a high voltage between the both electrodes is an alternating current to one of the electrodes Generally, the other electrode is set to a reference voltage such as ground level.
- a high voltage of several kVrms (Root Mean Square) is applied to one of the electrodes serving as a high voltage power supply unit.
- the other part of the power supply / ground (the other electrode and the part electrically connected thereto) is provided to prevent breakdown of the gas present there. The distance is far enough.
- the concentration of the electric field strength sufficient to cause the dielectric breakdown of the surrounding gas layer can not be avoided by the shape or surface condition of the metal part of the feeding portion from the micro point of view.
- an active gas generating apparatus in consideration of such metal contamination, there are, for example, a plasma generating apparatus disclosed in Patent Document 1 and a plasma processing apparatus disclosed in Patent Document 2.
- the plasma generator disclosed in Patent Document 1 performs dielectric barrier discharge in a discharge portion provided between opposed high-voltage electrode components / ground electrode components, and passes active gas through the material gas. It is an apparatus to generate. In this apparatus, the discharge part and the AC voltage application part are not separated but exist in the same space, and the raw material gas is supplied to the discharge space after passing through the AC voltage application part and finally processed It is supplied to the chamber.
- the plasma processing apparatus disclosed in Patent Document 2 uses a structure in which an insulator is inserted and sealed at the outer edge portion of the opposing electrode component. With such a structure, it is intended to suppress abnormal discharge from the discharge part to a housing (including a ground electrode) in which the electrode configuration part is installed.
- Patent No. 5694543 Patent No. 5328685 gazette (figure 10)
- the discharge due to the dielectric breakdown of the source gas does not necessarily occur only in the discharge portion. From a macroscopic point of view, it is designed to suppress unnecessary discharges other than the discharge part by taking a sufficient insulation distance.
- the unnecessary discharge for example, abnormal discharge between the metal electrode of the high voltage side electrode forming part applying an alternating voltage and the metal casing containing the electrode forming part can be considered.
- Patent Document 1 induces evaporation of component elements installed in the vicinity due to the above-described dielectric breakdown, which mixes with the source gas and is supplied to the discharge portion and processing chamber. There is a problem that it becomes a metal contamination of a semiconductor by being done.
- the plasma processing apparatus disclosed in Patent Document 2 is also insufficient as a metal contamination contamination prevention treatment when abnormal discharge occurs. Because the discharge part and the AC voltage application part still exist in the same space, there is no change in the structure for generating the active gas by the source gas passing through the AC voltage application part advancing to the discharge part. is there. That is, since the plasma processing apparatus disclosed in Patent Document 2 can not avoid the occurrence of metal contamination similarly to the plasma generating apparatus disclosed in Patent Document 1, the quality of the generated active gas is degraded accordingly There was a problem that
- An object of the present invention is to solve the problems as described above and to provide an active gas generator capable of generating a high quality active gas.
- An active gas generation device includes an active gas generation electrode group including a first electrode component and a second electrode component provided below the first electrode component;
- An active gas generating device comprising: an alternating current power supply unit applying an alternating voltage so that the first electrode constituting unit has a high voltage in a second electrode constituting unit, the first electrode constituting unit comprising And a first metal electrode formed on the upper surface of the first dielectric electrode, wherein the second electrode component includes a second dielectric electrode and the second electrode. And a second metal electrode formed on the lower surface of the dielectric electrode, wherein the first and second dielectric electrodes face each other when the alternating voltage is applied.
- a discharge space formation region which is a region where two metal electrodes overlap in plan view, as a discharge space;
- An active gas obtained by causing a discharge phenomenon to occur in the discharge space and activating a source gas supplied to the discharge space by application of the alternating voltage by the flow power supply unit is provided in the second electrode configuration part
- the active gas generation device comprises a first auxiliary member provided so as to surround the side surface and the upper surface of the active gas generation electrode group, and the active gas generation electrode on the upper main surface.
- a second auxiliary member for disposing a group and the first auxiliary member, the first and second auxiliary members being separated from the discharge space between the active gas generating electrode group and the alternating current, and A voltage application space is formed, and the second auxiliary member has an auxiliary member gas discharge port for passing the active gas ejected from the gas jet port, and the first and second auxiliary members are integrated.
- the gas generator further includes a metal casing having a hollow portion for accommodating all of the active gas generating electrode group and the second auxiliary member, and at least a portion of the first auxiliary member.
- the housing has a housing gas discharge port for discharging the active gas passing through the auxiliary member gas discharge port to the outside, and a housing is provided between the housing and the first and second auxiliary members.
- a contact space is provided, and the first and second auxiliary members introduce the source gas supplied from the outside into the discharge space independently of the AC voltage application space, and the source gas flow for the source gas supply path.
- the active gas generator further has the following features (1) to (5), (1)
- the active electrode in a mode in which a second electrode component supports the first electrode component; (2)
- the first dielectric electrode has a stepped portion that protrudes downward in a region outside the discharge space other than the discharge space formation region, and the formation height of the stepped portion
- the gap length of the discharge space is defined by (3)
- the first and second dielectric electrodes respectively form a thickness of the discharge space formation region thinner than the region outside the discharge space (4)
- the housing is fastened to the first auxiliary member only on the upper surface outside the hollow portion, without being in contact with the side surface of the first auxiliary member and the bottom surface of the second auxiliary member, in the hollow portion.
- the first and second auxiliary members forming the case contact space are all
- the AC voltage application space is provided separately from the discharge space, and the first and second auxiliary members are independent of the AC voltage application space.
- the flow of gas between the discharge space and the AC voltage application space is separated by providing the source gas flow path for the source gas supply path that leads the source gas supplied from the outside to the discharge space.
- the evaporation material such as the constituent material of the first electrode component generated when abnormal discharge occurs in the AC voltage application space is mixed into the discharge space directly or via the source gas supply path.
- the mixing phenomenon can be reliably avoided.
- the active gas generating apparatus according to the present invention of claim 1 has an effect of being able to discharge a good quality active gas to the outside without the above-mentioned mixing phenomenon being surely done.
- the present invention according to claim 1 has a structure in which positional deviation does not easily occur between the first and second electrode components by having the above feature (1), so that abnormal discharge occurs in the gap caused by the positional deviation. The possibility can be reduced.
- the present invention according to claim 1 can set the gap length with high accuracy by having the above feature (2), and further reduce the product cost without requiring other parts such as a spacer for gap length formation. Can be implemented.
- the present invention according to claim 1 avoids an increase in applied voltage for causing a discharge phenomenon in the discharge space, and reduces the possibility of occurrence of abnormal discharge. it can. Further, by increasing the thickness of the region outside the discharge space in each of the first and second dielectric electrodes, the strength of the first and second electrode components can be improved.
- the seal between the housing and the first auxiliary member can be completed at one place on the top surface of the housing, and accordingly, the design shape can be obtained. You can afford it.
- the present invention according to claim 1 is effective in the insulation breakdown due to the gas present in the housing contact space provided between the housing and the first and second auxiliary members. Can be prevented.
- the active gas generating electrode group is accommodated in a metal case, and the active gas generating device including the active gas generating electrode group and the case is installed immediately above the processing chamber for forming a film on the silicon wafer.
- a metal electrode is metallized on a part of the surface of the dielectric electrode in each of the high voltage side electrode construction portion and the ground side electrode construction portion, whereby the dielectric electrode and the metal electrode are integrally formed.
- the metallization process is formed by using a printing and baking method, a sputtering process, an evaporation process, and the like.
- a high frequency power source is connected to the metal electrode.
- the ground-side electrode component is grounded together with the housing and fixed at a reference potential.
- a dielectric barrier discharge is generated in the discharge space of the active gas generating electrode group by applying an AC voltage V0p (0 peak value) of 10 kHz to 100 kHz and 2 to 10 kV to the active gas generating electrode group from a high frequency power source. There is.
- a raw material gas of nitrogen, oxygen, rare gases, hydrogen, and fluorines is supplied to the active gas generator from the outside via a gas supply port (raw material gas flow path).
- the raw material gas travels to the internal discharge space through the raw material gas supply path provided on the outer peripheral portion of the active gas generation electrode group, and is activated in the discharge space, and the gas containing the active gas is grounded
- the film is ejected from a gas ejection port provided in the side electrode forming portion to a processing chamber outside the housing to perform a film forming process.
- FIG. 4 is explanatory drawing which shows typically the cross-section of the active gas production
- FIG. 5 is an explanatory view showing the main components of the active gas generator of the base technology in a disassembled state. 4 and 5 show an XYZ orthogonal coordinate system.
- the active gas generation electrode group 301 is provided below the high-voltage electrode assembly 1A (first electrode assembly) and the high-voltage electrode assembly 1A. And a ground-side electrode component 2A (second electrode component).
- the ground-side electrode-constituting portion 2A has a dielectric electrode 211 and metal electrodes 201H and 201L.
- the dielectric electrode 211 has a rectangular plate structure having a longitudinal direction in the X direction and a lateral direction in the Y direction. ing.
- a plurality of gas jet ports 55 are provided at the center of the dielectric electrode 211 along the X direction.
- the plurality of gas jet outlets 55 are provided to penetrate from the upper surface to the lower surface of the dielectric electrode 211, respectively.
- the wedge-shaped step-shaped portion 51 does not overlap the plurality of gas jet ports 55 in plan view, and the formation width in the Y direction decreases as it approaches each of the plurality of gas jet ports 55 in plan view. It is formed. Specifically, four rhombus single-piece portions 51s which are formed in a rhombic shape in plan view and are separated from one another among the five gas ejection ports 55 and provided outside the gas ejection ports 55 at both ends of the five gas ejection ports 55 are provided.
- the wedge-shaped step-shaped portion 51 is formed by an assembly of the two triangular simplex portions 51t having a substantially isosceles triangle shape in plan view.
- the dielectric electrode 211 further includes linear step-shaped portions 52A and 52B formed to project upward on both end sides in the X direction.
- the linear step-shaped portions 52A and 52B are formed extending in the Y direction over the entire length in the short direction of the dielectric electrode 211 in plan view, and the linear step-shaped portion with the height of the wedge-shaped step-shaped portion 51 The formation height of the portions 52A and 52B defines the gap length in the discharge space 66.
- the metal electrodes 201H and 201L are formed on the lower surface of the dielectric electrode 211, and are arranged to face each other across the central region of the dielectric electrode 211 in plan view.
- the metal electrodes 201H and 201L have a substantially rectangular shape in plan view, and the X direction is a longitudinal direction, and the Y directions orthogonal to the X direction are directions facing each other.
- the metal electrodes 201H and 201L are formed by metallization on the lower surface of the dielectric electrode 211. As a result, the dielectric electrode 211 and the metal electrodes 201H and 201L are integrally formed to form the ground side electrode configuration portion 2A.
- a process using a printing and baking method, a sputtering process, a vapor deposition process and the like can be considered.
- the dielectric electrode 111 of the high voltage side electrode constituting portion 1A has a rectangular flat plate structure in which the X direction is a longitudinal direction and the Y direction is a lateral direction.
- the dielectric electrode 111 and the dielectric electrode 211 are made of, for example, ceramic.
- the metal electrodes 101H and 101L are formed on the upper surface of the dielectric electrode 111, and are disposed to face each other with a central region of the same shape corresponding to the central region of the dielectric electrode 211 in plan view. At this time, the metal electrodes 101H and 101L have a substantially rectangular shape in plan view, as in the metal electrodes 201H and 201L, with the X direction as the longitudinal direction and the Y directions orthogonal to the X direction as the opposing directions. There is.
- the metal electrodes 101H and 101L can also be formed on the upper surface of the dielectric electrode 111 by the metallizing process in the same manner as the metal electrodes 201H and 201L.
- the electrode group 301 for active gas generation can be assembled by arrange
- a pair of spacers 37 is provided between the linear step-shaped portions 52A and 52B on both side surfaces of the active gas generation electrode group 301 extending in the X direction.
- the pair of spacers 37 is provided between the high voltage side electrode forming portion 1A and the ground side electrode forming portion 2A, and together with the wedge-shaped step-shaped portion 51 and the linear step-shaped portions 52A and 52B described above, the discharge space The gap length at 66 is specified.
- the spacer 37 is made of a nonmetal material, and is desirably made of the same material as the dielectric electrodes 111 and 211.
- a plurality of through holes 37h extending in the Y direction are provided in the pair of spacers 37, and the high voltage side electrode 1A and the ground side electrode are provided from the outside of the active gas generating electrode group 301 through the plurality of through holes 37h.
- the source gas can be supplied into the discharge space 66 between the component parts 2A.
- a region where the metal electrodes 101H and 101L and the metal electrodes 201H and 201L overlap in plan view is a discharge space Defined as
- the metal electrodes 101H and 101L and the metal electrodes 201H and 201L are connected to a (high voltage) high frequency power supply 5 (AC power supply unit).
- the metal electrodes 201H and 201L of the ground side electrode configuration section 2A are connected via the metal case (not shown) selectively provided inside the metal housing 34 and the electrode configuration section installation base 33.
- the AC voltage set at a frequency of 10 kHz to 100 kHz with the 0 peak value fixed at 2 to 10 kV from the high frequency power supply 5 is metal electrodes 101H and 101L, metal electrodes 201H and 201L. It is applied between.
- the electrode structure part installation stand 33 is formed with the constituent material which has insulation except the said metal component, for example, makes ceramic the structural material. Further, as the installation mode of the metal parts, a plurality of hollow holes penetrating the electrode structure installation base 33 up and down like the active gas discharge port 33k described later are provided, and the ground side electrode structure is provided in each of the plural hollow holes. The aspect of providing the said metal components, etc. so that the metal electrodes 201H and 201L of 2A and the metal housing 34 may be electrically connected can be considered.
- the electrode group 301 for generating active gas (including the high voltage side electrode constituting portion 1A and the ground side electrode constituting portion 2A) having the above-mentioned configuration is a metal casing. It is accommodated in the housing 34 using the cover 31, the cover 32, and the electrode construction portion installation base 33.
- the high frequency power supply 5 (AC power supply unit) is provided to apply an AC voltage to the active gas generation electrode group 301 so that the high voltage side electrode configuration unit 1A has a high voltage.
- a discharge space 66 is formed between the high voltage side electrode forming portion 1A and the ground side electrode forming portion 2A by the application of the alternating voltage by the high frequency power supply 5, and an active gas obtained by activating the source gas supplied to the discharge space 66. The gas is jetted downward from the plurality of gas jet ports 55 provided in the ground side electrode configuration portion 2A.
- the first auxiliary member configured by the combined structure of the covers 31 and 32 forms the AC voltage application space R31 separated from the discharge space 66 by the high voltage side electrode construction portion 1A.
- the electrode construction portion installation base 33 which is the second auxiliary member, arranges the entire lower surface of the ground side electrode construction portion 2A on its main surface 33b (see FIG. 5D).
- Reference numeral 301 is supported from the side of the ground electrode assembly 2A.
- the outer peripheral portion of the electrode configuration portion installation base 33 has an outer peripheral protruding portion 33x protruding upward (in the + Z direction) from the main surface 33b, and the entire outer peripheral electrode projection 301 is surrounded by the outer peripheral protruding portion 33x.
- the space between the outer peripheral projection 33x and the spacer 37 is a side space R33 (see FIGS. 4 and 5C).
- the electrode component installation table 33 allows the active gas ejected from the plurality of gas jet ports 55 to pass therethrough and leads the plurality of active gas passage ports 33i and the plurality below.
- Active gas outlet 33k The plurality of active gas passage openings 33i are disposed to coincide in plan view with the plurality of gas jet openings 55, and a plurality of active gas discharge openings 33k are provided below the plurality of active gas passage openings 33i.
- the combination of the active gas passage port 33i and the active gas discharge port 33k constitutes a gas discharge port for an auxiliary member which allows the active gas jetted from the corresponding gas jet port 55 to pass.
- the cover 32 which constitutes a part of the first auxiliary member, as shown in FIG. 5A, is formed in a rectangular ring shape in plan view, and the end portion of the high voltage side electrode component 1A and the electrode component part installation stand It is disposed on the 33 outer peripheral protrusions 33x.
- the hollow region 32c which is the inner peripheral region of the cover 32, is smaller than the shape of the high-voltage electrode configuration 1A in plan view, and is disposed on the high-voltage electrode 1A so as to be contained in the high-voltage electrode 1A.
- the outer peripheral area of the electrode configuration portion installation base 33 is larger than the high voltage side electrode configuration portion 1A in plan view, and is disposed so as to include the entire high voltage side electrode configuration portion 1A.
- the cover 32 has a source gas flow path 32h penetrating the cover 32 in the vertical direction (Z direction).
- the source gas flow channel 32 h extends in the X direction in the central portion of the long side area of the cover 32 extending in the X direction, and is formed in a straight line.
- the side space R33 is located below the source gas flow channel 32h.
- the cover 31 is disposed on the cover 32.
- the cover 31 is formed in the same rectangular ring shape as the cover 32 in plan view in the lower part, and is formed in a rectangular shape in plan view in the upper part, and the upper end is disposed on the upper surface of the metal housing 34.
- the hollow area 31 c which is the inner peripheral area of the cover 31 has the same shape as the hollow area 32 c of the cover 32 in plan view. Then, the upper end portion of the cover 31 is fixed to the upper surface of the metal casing 34 using a fixing means such as a bolt.
- the cover 31 has a source gas passage 31h penetrating in the vertical direction, and the source gas passage 31h is formed in a cylindrical shape, and the source gas is provided below the source gas passage 31h.
- a part of the flow path 32h is located.
- the raw material gas flow path 31h is formed in a straight line extending in the X direction at the central portion in the long side region of the cover 31 extending in the X direction, similarly to the raw material gas flow path 32h.
- the whole of the source gas passage 32h may be located at
- the cover 31 has a purge gas supply port 31p, which is a second gas supply port for a purge gas that is a second gas other than the source gas, vertically penetrated in the upper part, and a purge gas outlet 31e, which is a second gas outlet. have.
- the purge gas supply port 31p and the purge gas discharge port 31e are respectively provided in a cylindrical shape.
- the purge gas supply port 31p and the purge gas discharge port 31e are both provided such that the lower portion reaches the hollow area 31c.
- the purge gas supply port 31p and the purge gas discharge port 31e are provided independently of the source gas flow path 31h, so that a mixture of the purge gas and the source gas is prevented.
- Nitrogen or an inert gas is used as a purge gas supplied from the purge gas supply port 31p.
- the purge gas supply port 31p and the purge gas discharge port 31e are formed independently of the discharge space 66 and a housing contact space R34 described later.
- An AC voltage application space R31 consisting of a hollow area 31c of the cover 31 and a hollow area 32c of the cover 32 is provided above the high-voltage side electrode constituting portion 1A by the first auxiliary member constituted by the combined structure of the covers 31 and 32. Provided.
- the AC voltage application space R31 is completely separated from the other spaces by the high voltage side electrode constituting portion 1A and the covers 31 and 32. It becomes an independent space separated.
- the side space R33 is also completely removed from the other spaces excluding the discharge space 66 and the raw material gas flow paths 31h and 32h by the bottom surface of the cover 32, the end region of the main surface 33b of the electrode configuration portion installation base 33, and the outer peripheral protrusion 33x. It is separated.
- the plurality of through holes 37h provided in the raw material gas flow path 31h, the raw material gas flow path 32h, the side space R33, and the spacer 37 supply the raw material gas from the outside above the raw material gas flow path 31h to the discharge space 66 It forms a path.
- the source gas flow channels 31h and 32h are provided independently of the hollow regions 31c and 32c.
- the source gas supply path leading to the discharge space 66 from above the source gas flow path 31h by the source gas flow paths 31h and 32h, the side space R33, and the plurality of through holes 37h of the spacer 37 is independent of the AC voltage application space R31. It is formed.
- the AC voltage application space R31 and the discharge space 66 are spatially connected via the source gas supply path, the AC voltage application space R31 can completely separate the gas flow from the discharge space 66. it can.
- the cover 32 is made of a nonmetallic material. It is desirable that the cover 32 be made of the same material as that of the dielectric electrodes 111 and 211 so as to be able to cope with occurrence of abnormal discharge in the source gas flow path 32h.
- the cover 31 is made of metal, which is a metal material. The formation height of the cover 32 is set to secure a sufficient distance from the metal electrodes 101H and 101L, which are high voltage application areas, in order to set the cover 31 in the area where the electric field strength is low.
- an insulating material that does not have a problem even if mixed depending on the generation device generated by the active gas such as quartz or silicon nitride may be used as the material of the cover 32.
- the source gas supply path for example, the cover 32 or the spacer 37
- the constituent elements thereof evaporate, and they are mixed in the source gas, there is no problem at all in the film forming process.
- metal contamination derived from metal parts can be prevented by completely removing the metal material from the source gas supply path provided relatively close to the high voltage side electrode constituting portion 1A which is the strong electric field region. It becomes possible.
- the metal case 34 which is a metal case, includes all of the active gas generating electrode group 301 (high-voltage electrode unit 1A, ground electrode unit 2A), the cover 32, and the electrode unit installation base 33, and the cover The lower part of 31 is accommodated in the internal cavity.
- the electrode component placement table 33 On the bottom surface 34b of the hollow portion of the metal housing 34, the electrode component placement table 33 is disposed. At this time, the active gas outlet 34k (casing gas outlet) is located below the active gas outlet 33k. Therefore, the active gas spouted from the gas spout 55 is an external process provided below along the gas flow 8 through the active gas passage 33i, the active gas outlet 33k and the active gas outlet 34k. It is spouted to a chamber etc.
- the housing contacts between the side surface 34 d of the hollow portion of the metal housing 34 and the side surface area of the electrode configuration part installation base 33, the cover 32, and the lower part of the cover 31 and part of the bottom area of the upper part of the cover 31
- a space R34 is provided.
- the housing contact space R34 is provided between the covers 31 and 32 and the metal housing 34 outside the electrode mounting portion installation base 33.
- the housing contact space R34 is provided mainly to secure an insulation distance from the metal electrodes 101H and 101L of the active gas generation electrode group 301.
- the AC voltage application space R31 is configured to be an internal space completely independent of other spaces by the high-voltage electrode configuration 1A and the covers 31 and 32, and the discharge space 66 is also supplied with the source gas. It is configured to be an internal space independent of other spaces except for the route. Therefore, housing contact space R34 is provided separately from AC voltage application space R31 and discharge space 66, respectively.
- the above-described source gas supply path leading to the discharge space 66 is also an internal space independent of other spaces. As a result, the gas flow is completely separated between the discharge space 66 and the housing contact space R34.
- the source gas supply paths including the AC voltage application space R31, the discharge space 66, and the source gas flow paths 31h and 32h are respectively separated from the housing contact space R34 so that the flow of gas is separated. It is provided independently from the housing contact space R34.
- an O-ring 70 is provided so as to surround the source gas flow channels 31 h and 32 h on the contact surface between the cover 31 and the cover 32.
- an O-ring 70 is provided so as to surround the source gas flow path 32 h and the side space R 33 at the contact surface between the cover 32 and the electrode component installation stand 33.
- an O-ring 70 is provided on the contact surface between the ground-side electrode component 2A and the electrode component placement table 33 so as to surround the active gas passage 33i, and the contact between the electrode component placement pedestal 33 and the metal housing 34
- An O-ring 70 is provided to surround the active gas outlets 33 k and 34 k in the plane. The degree of sealing between the active gas passage 33i, the active gas outlet 33k and the other spaces of the active gas outlet 34k is enhanced by the O-rings 70. Further, in FIG. 4, small circles each indicate an O-ring 70.
- the AC voltage application space R31 is provided separately from the discharge space 66, and the first auxiliary member constituted by the covers 31 and 32 is independent of the AC voltage application space R31.
- the source gas flow paths 31h and 32h for the source gas supply path for guiding the source gas supplied from the outside to the discharge space 66, the gas flow between the discharge space 66 and the AC voltage application space R31 is completely completed. It is separated.
- the housing contact space R34 is provided separately from the discharge space 66, and the first auxiliary member constituted by the covers 31 and 32 is the housing contact space R34.
- the active gas generation device of the base technology can reliably avoid the first and second mixing phenomena described above, it is possible to discharge a good quality active gas to the outside.
- the active gas generation device of the base technology can supply the purge gas as the second gas other than the source gas into the AC voltage application space R31 from the purge gas supply port 31p. For this reason, the evaporation substance generated when abnormal discharge occurs in the AC voltage application space R31 can be removed from the purge gas outlet 31e to the outside.
- the source gas supply path described above is provided independently of the AC voltage application space R31, the source gas is not affected by the supply of the purge gas.
- an O-ring provided between the O-ring 70 provided between the cover 31 and the upper surface of the metal housing 34 and the electrode-constituting part installation base 33 between the bottom surface 34 b of the hollow portion of the metal housing 34 At 70, a seal between the cover 31 etc. and the metal housing 34 is implemented.
- the vertical positioning of the cover 31 etc. must be performed at one of the two sealing points by the O-ring 70, in which case the other sealing point is the one of the O-ring 70. Since it is necessary to provide a dimensional tolerance equal to or less than the crushing margin, a very strict design shape such as a geometrical tolerance or a dimensional tolerance is obtained. As a result, there is a risk that the sealing can not be reliably carried out at both of the two sealing points or that the processing cost is increased.
- the O-ring 70 is provided at a location where the temperature is high, such as in the vicinity of the discharge space 66 and the bottom surface 34 b of the hollow portion of the metal housing 34. Generally, it is known that, even if the O-ring 70 is at or below its upper temperature limit, evaporation of constituent materials occurs and micro leaks occur in a region close to that temperature.
- the housing contact space R34 is a closed space sealed by an O-ring 70 around the periphery. Since the space is already closed at the time of assembly, the case contact space R34 is at atmospheric pressure, and if the temperature of the metal case 34 rises due to the start of operation, the temperature of the gas in the case contact space R34 To rise. However, since the housing contact space R34 is a closed space, there is no escape place for gas and the pressure is increased, which may result in an excessive load source to the metal housing 34, the cover 32 and the like.
- the spacer 37 is a separate part from them, and it is necessary to tighten the dimensional tolerance / geometrical tolerance of both the ground side electrode construction 2A and the spacer 37 in order to make the heights thereof coincide with each other.
- the formed height does not completely match between the wedge-shaped step-shaped portion 51, the linear step-shaped portions 52A and 52B, and the spacer 37. In the gaps created by the above, unwanted gas leakage will occur.
- the spacer 37 is provided with a plurality of through holes 37h, but since it is a fine hole, the gas flow rate is uneven due to the increase in the number of processing steps and the variation in hole dimension tolerance, and the hole surface can not be smoothed. A wide variety of risks can be considered, including the possibility of becoming a dust source.
- the spacer 37 is provided to receive a load on the O-ring 70 that seals the cover 32 and the high-voltage side electrode component 1A, it is difficult to omit the spacer.
- FIG. 1 is an explanatory view schematically showing a cross-sectional structure of an active gas generator according to an embodiment of the present invention.
- FIG. 2 is an explanatory view showing a cross-sectional configuration of the active gas generation electrode group 300.
- FIG. 3 is explanatory drawing shown in the state which decomposed
- FIGS. 1 to 3 shows an XYZ orthogonal coordinate system.
- the active gas generating electrode group 300 includes the high voltage side electrode forming portion 1X (first electrode forming portion) and the high voltage side electrode forming portion 1X. And a ground-side electrode component 2X (second electrode component) provided below.
- the dielectric electrode 110 (first dielectric electrode) of the high voltage side electrode constituting portion 1X and the dielectric electrode 210 (second dielectric electrode) of the ground side electrode constituting portion 2X are longitudinal in the X direction and Y in the Y direction. It has a rectangular flat plate structure in the lateral direction.
- the dielectric electrode 110 and the dielectric electrode 210 are made of, for example, ceramic.
- the central region of the dielectric electrode 110 is opposed to each other with the central region of the dielectric electrode 110 therebetween, and the lower side from the upper surface of the dielectric electrode 110 ( ⁇ Z direction)
- a pair of recessed discharge recesses 116 are provided.
- the metal electrodes 100H and 100L are provided on the depressed surfaces of the pair of discharge recesses 116.
- the metal electrodes 100H and 100L which are the first metal electrodes, are formed on the upper surface (the depression surface of the discharge recess 116) of the dielectric electrode 110, which is the first dielectric electrode, and are substantially in plan view. It has a rectangular shape, with the X direction as the longitudinal direction, and Y directions orthogonal to the X direction as directions opposite to each other.
- the metal electrodes 100 H and 100 L can be formed by metallization on the top surface of the dielectric electrode 110.
- a plurality of gas injection holes 25 are provided in the central region of the dielectric electrode 210 along the X direction.
- the plurality of gas injection holes 25 are respectively penetrated from the upper surface to the lower surface of the dielectric electrode 210, and the plurality of gas passage ports 25i are respectively provided below the plurality of gas injection holes 25.
- the gas injection holes 25 and the gas passage openings 25i are formed in a cylindrical shape, and the gas passage openings 25i have a bottom surface wider than the gas injection holes 25.
- illustration of the gas passage port 25i is omitted, and only the gas injection holes 25 are shown as a representative.
- FIG. 2 and FIG. 3C when viewed from above, facing each other across the central region of the dielectric electrode 210 and being recessed upward (in the + Z direction) from the lower surface of the dielectric electrode 210 along the X direction.
- a pair of discharge recesses 126 is provided.
- the metal electrodes 200 H and 200 L (second metal electrodes) are provided on the depressed surfaces of the pair of discharge recesses 126.
- An O-ring groove 82 for forming a ring 71 is provided in the upper surface of the dielectric electrode 210 so as to surround the metal electrodes 200 H and 200 L in plan view.
- the metal electrodes 200H and 200L which are the second metal electrodes, are formed on the lower surface (recessed surface of the discharge recess 126) of the dielectric electrode 210, which is the second dielectric electrode.
- the X direction is the longitudinal direction
- the Y directions orthogonal to the X direction are the directions opposite to each other.
- the metal electrodes 200 H and 200 L are formed by metallization on the lower surface of the dielectric electrode 210.
- the active gas generating electrode group 300 is provided in a mode in which the ground-side electrode forming unit 2X supports the high-pressure side electrode forming unit 1X.
- the central region of the dielectric electrode 110 in the high voltage side electrode configuration portion 1X and the central region of the dielectric electrode 210 in the ground side electrode configuration portion 2X overlap in plan view
- the active gas generation electrode group 300 can be finally completed.
- the dielectric electrode 110 of the high voltage side electrode forming portion 1X and the dielectric electrode 210 of the ground side electrode forming portion 2X are tightened and integrated by a tightening mechanism (not shown) such as a bolt.
- the space existing in R 68 is defined as discharge space 68. Therefore, the discharge recess 116 is provided in the discharge space formation region R 68 of the dielectric electrode 110, and the discharge recess 126 is provided in the discharge space formation region R 68 of the dielectric electrode 210.
- the dielectric electrode 110 is formed in a region outside the discharge space, which is a region other than the discharge space formation region R68, with the lower surface formed downward (-Z direction) lower than the discharge space formation region R68.
- the protruding step portions 115H, 115M and 115L are provided, and the gap length of the discharge space 68 is defined by the formation depth S15 of the step portions 115H, 115M and 115L.
- the dielectric electrode 110 of the high voltage side electrode forming portion 1X has a relatively thin thickness in the discharge space forming region R68 and a relatively thick region outside the discharge space to maintain the strength.
- the discharge space formation region R68 is "S16 + S15" compared to the above-described discharge space outside region. It can be formed thin enough.
- the dielectric electrode 210 of the ground-side electrode constituent portion 2X has a relatively thin discharge space formation region R68 and a relatively thick region outside the discharge space to maintain strength.
- the discharge space formation region R68 is "S26" compared to the above-described discharge space outside region. It can be formed thin enough.
- the upper surface of the dielectric electrode 210 is a flat surface without causing a step between the discharge space formation region R68 and the above-described discharge space outside region.
- the ground side electrode configuration portion 2X can support the high voltage side electrode configuration portion 1X with high stability.
- the metal electrodes 100H and 100L and the metal electrodes 200H and 200L are connected to a (high voltage) high frequency power supply 5 (AC power supply unit). Specifically, metal electrodes 200H and 200L of ground-side electrode configuration portion 2X are grounded via cooling stand 13 and metal parts (not shown), and in the present embodiment, 0 peak from high frequency power supply 5 An alternating voltage set at a frequency of 10 kHz to 100 kHz is applied between the metal electrodes 100H and 100L and between the metal electrodes 200H and 200L while the value is fixed at 2 to 10 kV.
- the active gas generating electrode group 300 having the above-described configuration uses the cover 11, the cover 12 and the cooling table 13 in the metal casing 14 in the active gas generating device of the present embodiment. It is housed.
- the high frequency power supply 5 is provided to apply an alternating voltage to the active gas generating electrode group 300 so that the high voltage side electrode forming portion 1X has a high voltage.
- a discharge phenomenon (dielectric barrier discharge) is generated in the discharge space 68 between the high voltage side electrode forming portion 1X and the ground side electrode forming portion 2X by the application of the alternating voltage by the high frequency power supply 5, and the raw material supplied to the discharge space 68
- An active gas obtained by activating the gas is jetted downward from the plurality of gas jet holes 25 provided in the ground side electrode configuration portion 2X.
- the combined structure of the covers 11 and 12 which are the first auxiliary member and the cooling stand 13 which is the second auxiliary member have the active region for generating the active gas 300 with the upper area of the high voltage side electrode constituting portion 1X as the main region. It is provided so as to form an AC voltage application space R11 therebetween.
- the cover 12 is provided so as to surround the periphery of the active gas generation electrode group 300, and the cover 11 disposed on the cover 12 is a high voltage side electrode constituting portion 1X.
- the cover 11 and the cover 12 surround the side surface and the upper surface of the active gas generating electrode group 300 by being provided at the upper side.
- the cooling stand 13 arranges the ground side electrode constituting portion 2X of the active gas generating electrode group 300 on the main surface 13b (see FIG. 3D).
- the AC voltage application space R11 can be formed by the cover 11, the cover 12 and the cooling stand 13.
- the active gas generation electrode group 300 can be mounted from the ground side electrode configuration portion 2X side in a mode in which only the dielectric electrode 210 contacts the main surface 13b.
- the cooling stand 13 passes the active gas ejected from the plurality of gas ejection holes 25 and the plurality of gas passage openings 25i and discharges the plurality of active gases led downward. It has an outlet 13k.
- the plurality of active gas outlets 13k are arranged in plan view to coincide with the plurality of gas passage ports 25i, and the active gas outlet 13k passes the active gas ejected from the corresponding gas ejection holes 25 and the gas passage ports 25i. It functions as an auxiliary member gas exhaust port.
- an O-ring groove 83 for forming the ring 71 is provided to surround the plurality of active gas outlets 13k in plan view, and O is formed around the source gas flow path 13h.
- An O-ring groove 86 for forming the ring 72 is provided, and an O-ring groove 87 for forming the O-ring 72 is provided around the cooling water path 13 w.
- the cover 12 forming a part of the first auxiliary member is formed in a rectangular ring shape in plan view and is formed on the cooling stand 13 so as to surround the entire active gas generating electrode group 300. Will be placed.
- the hollow region 12c which is the inner peripheral region of the cover 12 is provided slightly larger than the active gas generating electrode group 300 in plan view so as to accommodate the active gas generating electrode group 300 inside.
- the formation area of the main surface 13b of the cooling stand 13 is set larger than that of the active gas generation electrode group 300 in plan view and about the same as the outer peripheral area of the cover 12, and the active gas generation electrode group 300 and cover 12 can be arranged on the main surface 13b.
- the cover 12 has a columnar raw material gas flow path 12h penetrating the cover 12 in the vertical direction (Z direction). And the source gas flow path 13h of the cooling stand 13 is located under the source gas flow path 12h.
- the source gas flow path 13h extends from the surface of the cover 12 in the vertical direction (-Z direction), and then bends halfway to extend in the horizontal direction (+ Y direction) It is formed. Further, a source gas flow path 13m connected to the source gas flow path 13h is formed extending from the end of the source gas flow path 13h along the vertical direction (+ Z direction) to the main surface 13b.
- the source gas flow path 2 m provided in the dielectric electrode 210 of the ground side electrode forming portion 2 X is located above the source gas flow path 13 m. Then, as shown in FIG. 2, the source gas flow path 2 m is provided in the dielectric electrode 210 so as to be connected to the discharge space 68.
- the cover 12 further includes a cylindrical cooling water path 12w penetrating the cover 12 in the vertical direction (Z direction). And the cooling water path 13w of the cooling stand 13 is located under the cooling water path 12w.
- an O-ring groove 81 for forming an O-ring 71 is provided in a region along the outer periphery of the hollow region 12c in the upper surface of the cover 12, and the periphery of the raw material gas passage 12h.
- An O-ring groove 84 for forming an O-ring 72 is provided, and an O-ring groove 85 for forming an O-ring 72 is provided around the cooling water path 12 w.
- the cooling water path 13w extends from the surface of the cooling stand 13 in the vertical direction (-Z direction), bends halfway, and extends in the horizontal direction.
- the cooling water path 13w formed to extend horizontally is only partially shown in FIG. 1, actually, the cooling water can be circulated from the outside over the whole of the cooling stand 13 .
- the cover 11 is disposed on the cover 12.
- the cover 11 is formed in the same rectangular ring shape as the cover 12 in plan view in the lower part, and is formed in a rectangular shape in plan view in the upper part, and the upper end is disposed on the upper surface of the metal housing 14.
- an AC voltage application space R11 surrounding the upper surface and the side surface of the active gas generating electrode group 300 is formed by the inner peripheral region of the cover 11 and the inner peripheral region (hollow region 12c) of the cover 12.
- an AC voltage application space R11 which is a closed space mainly above the high voltage side electrode configuration portion 1X is formed. ing.
- the cover 11 and the cover 12 and the cover 12 and the cooling base 13 are fixed by using a tightening mechanism such as a bolt not shown, and the cover 11, the cover 12 and the cooling base 13 are integrally connected.
- the upper portion of the cover 11 and the metal casing 14 are fastened by the tightening mechanism 76 only on the upper surface of the metal casing 14 with respect to the cover 11, the cover 12, and the cooling stand 13 of an integral structure.
- the cover 11 has a source gas passage 11h penetrating in the vertical direction, and the source gas passage 11h is formed in a cylindrical shape, and the source gas is provided below the source gas passage 11h. A part of the flow path 12h is located.
- the cover 11 has the cooling water passage 11w penetrating in the vertical direction, and the cooling water passage 11w is formed in a cylindrical shape, and the cooling water is provided below the cooling water passage 11w.
- the path 12w is located.
- the cover 11 has a purge gas supply port 11p, which is a second gas supply port for a purge gas that is a second gas other than the source gas, vertically penetrated at the upper part, and a purge gas outlet 11e that is a second gas outlet.
- the purge gas supply port 11p and the purge gas discharge port 11e are each provided in a cylindrical shape.
- the purge gas supply port 11p and the purge gas discharge port 11e are both provided such that the lower portion reaches the AC voltage application space R11.
- the purge gas supply port 11p and the purge gas discharge port 11e are provided independently of the source gas flow path 11h and the cooling water path 11w, so that the mixture of the purge gas and the source gas or the cooling water is prevented.
- Nitrogen or an inert gas is used as a purge gas supplied from the purge gas supply port 11p.
- the purge gas supply port 11p and the purge gas discharge port 11e are formed independently of the discharge space 68 and the housing contact space R14.
- the lower part of the cover 11 and the whole of the cover 12 are both formed in a rectangular ring in plan view, and the cooling base is set so that the active gas generating electrode group 300 is located in the hollow area 12 c of the cover 12 Since the active gas generation electrode group 300 is mounted on the electrode 13, the AC voltage application space R11 is a closed space formed in the cover 11, the cover 12 and the cooling stand 13 and is completely separated from other spaces. Become an independent space.
- the discharge from the outside above the source gas channel 11h is performed by using the source gas channel 11h, the source gas channel 12h, the source gas channel 13h, the source gas channel 13m, and the source gas channel 2m.
- a source gas supply path connected to the space 68 is formed.
- the source gas flow paths 11h, 12h, 13h, 13m and 2m are provided independently of the AC voltage application space R11.
- the source gas supply path leading to the discharge space 68 from above the source gas flow path 11h is formed independently of the AC voltage application space R11 through the source gas flow paths 11h to 13h, 13m and 2m.
- the AC voltage application space R11 and the discharge space 68 are not spatially connected via the source gas supply path, the AC voltage application space R11 is completely separated from the discharge space 68, and AC voltage application is performed.
- the space R11 can completely separate the gas flow with the discharge space 68.
- cooling water passage 11 w a cooling water flow passage for cooling the cooling table 13 from the outside above the cover 11 is formed.
- the cooling water paths 11w, 12w and 13w are provided independently of the AC voltage application space R11 and the discharge space 68.
- the AC voltage application space R11 and the discharge space 68 are adversely affected by the cooling water flow path which is composed of the cooling water paths 11w to 13w and is provided between the cooling water path 11w and the inside of the cooling stand 13 Absent.
- the cover 11, the cover 12 and the cooling stand 13 are all made of a metal material.
- the clamping mechanism 76 fastens the upper portion of the cover 11 and the metal casing only on the top surface of the metal casing 14. Therefore, without causing the contact between the lower portion of the cover 11, the side surface of the cover 12 and the side surface of the cooling base 13 and the side surface 14d of the metal housing 14, and the contact between the bottom surface of the cooling base 13 and the bottom surface 14b of the metal housing 14
- the housing contact space R14 can be formed in the hollow portion of the metal housing 14.
- the side space provided between the side surface 14 d of the hollow portion of the metal housing 14 and the cooling base 13, the cover 12 and the lower portion of the cover 11, and the bottom surface 14 b of the hollow portion of the metal housing 14 and the cooling base 1 A space combined with the bottom space provided between the two is the housing contact space R14.
- the case contact space R14 is provided between the cover 11, the cover 12, and the metal case 14 outside the cooling stand 13.
- the housing contact space R14 is provided mainly to thermally insulate the cover 11, the cover 12, the cooling stand 13 and the metal housing 14.
- cooling base 13 is located above the bottom surface 14b of the hollow portion of the metal housing 14 with the housing contact space R14 therebetween, and the active gas outlet via the housing contact space R14 below the active gas outlet 13k. 14k (casing gas outlet) is located.
- the active gas ejected from the gas ejection holes 25 is, along the gas flow in the vertical direction (-Z direction), the gas passage 25i, the active gas outlet 13k, the housing contact space R14, and the active gas exhaustion. It is jetted to an external processing chamber or the like provided below through the outlet 14k.
- the AC voltage application space R11 is configured by the integrated cover 11, the cover 12 and the cooling stand 13 so as to be an internal space completely independent from other spaces. Therefore, the housing contact space R14 is provided separately from the AC voltage application space R11.
- the casing contact space R11 and the source gas supply path including the source gas flow paths 11h and 12h are separated from the casing contact space R14 so that the flow of gas is separated. It is provided independently of R14. Furthermore, the cooling water circulation path including the cooling water paths 11w and 12w is also provided independently from the housing contact space R14, similarly to the source gas supply path.
- an O-ring 72 is provided around the raw material gas flow paths 11h and 12h, and an O-ring 72 is provided around the cooling water paths 11w and 12w.
- An O-ring 71 is provided to surround the electrode group 300.
- O-rings 72 are provided around the raw material gas flow paths 12h and 13h, and O-rings 72 are provided around the cooling water paths 12w and 13w.
- An O-ring 71 is provided to surround the gas generating electrode group 300.
- the O-ring 72 described above enhances the degree of sealing between the source gas supply path or the cooling water flow path and the other space.
- the degree of sealing between the AC voltage application space R11 and the other space is enhanced by the O-ring 71 described above.
- an O-ring 72 is provided around the active gas discharge port 13k on the contact surface between the dielectric base 210 of the ground side electrode configuration section 2X and the cooling stand 13.
- the O-ring 72 enhances the degree of sealing with the active gas outlet 13k. Further, in FIG. 1, small white spots indicate O-ring 71 or O-ring 72.
- the AC voltage application space R11 is provided separately from the discharge space 68, and the cover 11, the cover 12 and the cooling stand 13 as the first and second auxiliary members are By providing the source gas flow paths 11h, 12h, 13h, and 13m for the source gas supply path that leads the source gas supplied from the outside to the discharge space 68 independently of the AC voltage application space R11, the discharge space 68 is provided. And the AC voltage application space R11 are separated from each other.
- the active gas generating device of the present embodiment the evaporation of the constituent materials and the like of the high-voltage side electrode constituting portion 1X and the ground side electrode constituting portion 2X generated when abnormal discharge occurs in the AC voltage application space R11. It is possible to reliably avoid the mixing phenomenon (corresponding to the “first mixing phenomenon” of the base technology) in which the substance is mixed into the discharge space 68 directly or through the source gas supply path.
- the active gas generating device of the present embodiment has the effect of being able to discharge a good quality active gas to the outside without the above-mentioned mixing phenomenon being reliably avoided.
- the active gas generator of the present embodiment has the following features (1) to (5).
- the active gas generating electrode group 300 is configured such that the ground-side electrode configuration unit 2X supports the high-pressure side electrode configuration unit 1X.
- Characteristic (2) provided in the region outside the discharge space of the dielectric electrode 110 in the high voltage side electrode constituting portion 1X, and has stepped portions 115H, 115M, 115L projecting downward, and these stepped portions 115H, 115M, 115L
- the gap length of the discharge space 68 is defined by the formation height S15.
- the dielectric electrode 110 of the high voltage side electrode constituting portion 1X and the dielectric electrode 210 of the ground side electrode constituting portion 2X form the discharge space forming region R68 relatively thin, and the above-mentioned discharge space The thickness of the outer region is formed relatively thick.
- the metal housing 14 does not contact the side surfaces of the cover 11, the cover 12 and the cooling base 13 and the bottom surface of the cooling base 13 by fastening the upper surface only with the upper part of the cover 11
- a housing contact space R14 is formed in the hollow portion 14.
- the cover 11, the cover 12 and the cooling stand 13 are all made of a metal material.
- the active gas generation device of the present embodiment has the above feature (1), so that the alignment between the high voltage side electrode forming portion 1X and the ground side electrode forming portion 2X is relatively easy, and the high voltage side electrode forming portion Since it becomes a structure which position shift does not produce easily between 1X and grounding side electrode composition part 2X, reduction of a possibility that abnormal electric discharge may occur in a crevice resulting from position shift can be attained.
- the active gas generation device of the present embodiment can set the gap length of the discharge space 68 with high accuracy by having the above feature (2), and further, can use other components such as a spacer for gap length formation. Product cost can be reduced as unnecessary.
- the gap length of the discharge space 68 is defined only by the formation height S15 of the step portions 15H, 115M, 115L of the high-voltage electrode forming portion 1X which is one component. Since the formation heights of the step portions 15H, 115M, and 115L can be made to coincide with each other at the formation height S15 relatively easily and accurately, the accuracy of the gap length of the discharge space 68 can be enhanced.
- the active gas generation electrode group 300 may be disposed on the cooling table 13, and since the active gas generation electrode group 300 does not have a contact relationship with the cover 12, the active gas generation electrode group 300 and the cover The need to provide an O-ring to seal the 12 can be eliminated.
- the present embodiment does not require parts for receiving a load such as the spacer 37 of the base technology, the eighth problem of the base technology can be solved.
- the active gas generation device of the present embodiment has the above feature (3), whereby the thickness of discharge space formation region R68 is sufficiently thin in each of dielectric electrodes 110 and 210, to form active gas generation electrode group 300. It is possible to avoid an increase in applied voltage for causing a discharge phenomenon in the discharge space 68 and to reduce the possibility of occurrence of abnormal discharge.
- the strength of the high pressure side electrode forming portion 1X and the ground side electrode forming portion 2X can be improved by making the thickness of the region outside the discharge space sufficiently large. be able to.
- the third problem of the base technology is achieved by sufficiently increasing the thickness of the region outside the discharge space in each of the high voltage side electrode forming portion 1X and the ground side electrode forming portion 2X. It can be eliminated.
- the active gas generation device of the present embodiment has the feature (4), so that the fastening between the metal housing 14 and the cover 11 constituting the first auxiliary member is performed at one point on the upper surface of the metal housing 14 Because it can be done, it is possible to make room for the design shape.
- the active gas generator of the embodiment can solve the first problem of the base technology.
- the active gas generating device of the present embodiment exists in the case contact space R14 provided between the metal case 14 and the cover 11, the cover 12 and the cooling stand 13 by having the above feature (5). Dielectric breakdown due to gas can be effectively prevented.
- the high electric field generated in the AC voltage application space R11 affects the external housing contact space R14. Does not give. Therefore, no abnormal discharge occurs in the housing contact space R14.
- the seal between the cover 11 and the metal housing 14 is only at one place on the top surface of the metal housing 14, and the housing contact space is also between the bottom surface of the cooling stand 13 and the metal housing 14. R14 is provided.
- the housing contact space R14 is connected to the active gas discharge port 14k below the bottom surface of the cooling stand 13, the housing contact space R14 is an open space opened to the outside. Therefore, since the pressure of the gas is not increased in the housing contact space R14, the seventh problem of the base technology can be solved.
- the active gas generation electrode group 300 is provided in the closed space formed by the metal parts (the cover 11, the cover 12 and the cooling stand 13) which are all grounded, in the AC voltage application space R11 existing in the closed space. An abnormal discharge does not occur.
- O-rings 71 are provided between the cover 11 and the cover 12, between the cover 12 and the cooling stand 13, and between the high-voltage electrode forming portion 1X and the ground-side electrode forming portion 2X in the active gas generating electrode group 300.
- the active gas generation device of the present embodiment can solve the second problem of the base technology.
- the metal casing 14, the cover 11, the cover 12 and the cooling stand 13 are made of a metal material, and the dielectric electrode 110 of the high voltage side electrode constituting portion 1X and the dielectric electrode 210 of the ground side electrode constituting portion 2X are respectively the discharge space Since the film thickness of the outer region is sufficiently thick, a tightening mechanism such as a bolt can be used without any problem with these components 1X, 2Y and 11-14.
- the seal location can be achieved by reducing the number of parts related to the O-ring. Can be suppressed, and the fifth problem of the base technology can be solved.
- the first and second auxiliary members, the cover 11, the cover 12 and the cooling table 13, guide the cooling water supplied from the outside to the cooling table 13. Since the cooling water flow paths 11w, 12w, and 13w for the paths are provided, the active gas generation electrode group 300 can be cooled from the ground side electrode configuration portion 2X side to minimize the influence of thermal distortion.
- the embodiment is configured to cool by passing cooling water through the active gas generator.
- the O-rings 71 and 72 can be maintained at a temperature significantly lower than the upper temperature limit, and the sixth problem of the base technology can be solved.
- the casing contact space R 14 is provided in the hollow portion of the metal casing 14, and the cover 11, the cover 12 and the cooling in the hollow portion of the metal casing 14. Since the base 13 and the metal case 14 do not contact and the case contact space R14 is a pressure reduction region of about 1 to 5 Torr, heat from the metal case 14 to the active gas generating electrode group 300 is generated. It has a structure to suppress conduction.
- the active gas generation device of the present embodiment can supply a purge gas as the second gas other than the source gas into the AC voltage application space R11 from the purge gas supply port 11p. For this reason, the evaporation substance generated when abnormal discharge occurs in the AC voltage application space R11 can be removed to the outside from the purge gas outlet 31e.
- the source gas supply path and the cooling water flow path described above are provided independently of the AC voltage application space R11, the source gas and the cooling water are not affected by the supply of the purge gas.
- the pressure in the discharge space 68 is set to a relatively weak weak atmospheric pressure, approximately 10 kPa to 30 kPa.
- nitrogen gas 100% can be considered as source gas in the said pressure setting, for example.
- the discharge space 68 is a space for generating the discharge D1 to activate the source gas, it is desirable to start the discharge at a lower voltage.
- the discharge D1 itself is caused by the breakdown of the gas when the electric field strength exceeds a certain value.
- the electric field strength causing the dielectric breakdown is determined by the type and pressure of the source gas, and the lower the pressure near the atmospheric pressure, the lower the electric field strength leading to the dielectric breakdown. From the above viewpoint, the pressure is set in the discharge space 68 as described above.
- the pressure of the AC voltage application space R11 is desirably about 100 kPa to 300 kPa (absolute pressure).
- the discharge space 68 and the AC voltage application space R11 have a structure in which the gas layers are separated from each other. Therefore, by setting the pressure of the discharge space 68 lower than the pressure of the AC voltage application space R11, the discharge D1 in the discharge space 68 can be generated even at a lower applied voltage, and the pressure of the AC voltage application space R11 By setting the value of V relatively high, it is possible to set the pressure suitable for the discharge space 68 and the AC voltage application space R11 to suppress the discharge.
- the pressure of the discharge space 68 is set relatively low so that the discharge phenomenon is generated even at a lower applied voltage, and the pressure of the AC voltage application space R11 is relatively high. An effect of preventing the occurrence of the discharge phenomenon by setting is exhibited.
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Abstract
Description
以下での述べる実施の形態で共通する活性ガス生成装置の特徴箇所について説明する。高圧側電極構成部及び接地側電極構成部を対向的に一対配置することにより、誘電体バリア放電の活性ガス生成用電極群としている。活性ガス生成用電極群において、高圧側電極構成部及び接地側電極構成部間に放電空間が形成される。
図4はこの発明の前提技術である活性ガス生成装置の断面構造を模式的に示す説明図である。図5は前提技術の活性ガス生成装置の主要構成部を分解した状態で示す説明図である。なお、図4及び図5それぞれにXYZ直交座標系を示している。
(第1の課題)
カバー31、カバー32及び電極構成部設置台33(以下、「カバー31等」と略記する場合あり)と金属筐体34との間において垂直方向に各2か所にてシールを実施している。
図4で図示しているOリング70の全ての締め付けを、カバー-31と金属筐体34との間におけるボルト等の締付機構76による締め付けのみで行っている。この場合、トータルとしての締付機構76へのボルト軸力を相当大きなものとする必要が生じ、それによる非金属部品である電極構成部設置台33やカバー32への破損リスクが増大してしまい、同時に各Oリング70が確実にシールされない可能性が発生する。
接地側電極構成部2Aと電極構成部設置台33との間に設けている中央部近辺のOリング70を直上から押し付ける機構が無い。前提技術の場合、接地側電極構成部2Aに加えた締付力は接地側電極構成部2A自体を経由して、下方のOリング70を押さえる形態となるため、過度の曲げ強度が接地側電極構成部2Aに発生して破損リスクが高まり、かつ、下方のOリング70のシールを確実に実施することができない可能性がある。
活性ガス生成用電極群301を接地側電極構成部2A側から支持する電極構成部設置台33を活性ガス生成用電極群301の別部品として設けているため、接地側電極構成部2Aと電極構成部設置台33との間にわずかな隙間が生じた場合でも、その隙間において異常放電が発生する可能性があった。
前提技術は、全体的にOリング70の数が多過ぎる。Oリング70の個数の増大は締付力の増大を招くだけでは無く、リークリスクを高めることとなる問題点があった。
前提技術は、放電空間66や金属筐体34の空洞部の底面34bの近傍等、高温になる箇所にOリング70を設けている。Oリング70は一般的に、その耐熱上限温度以下であってもその温度に近い領域では構成物質の蒸発が生じかつ微小リークが発生することが知られている。
筐体接触空間R34が周囲をOリング70にてシールされた閉空間となっている。組立時には既に閉空間となっているため筐体接触空間R34は大気圧であり、運転開始によって金属筐体34の温度が上昇した場合、その熱伝導によって筐体接触空間R34内のガスの温度が上昇する。しかし、筐体接触空間R34は閉空間であるためガスの逃げ場が存在せず圧力の上昇を招き、結果的に金属筐体34やカバー32等に対する過大な荷重源となってしまう懸念がある。
図5に示すように、高圧側電極構成部1Aと接地側電極構成部2A間の放電空間66のギャップ長を規定するための部位としてクサビ形段差形状部51、直線形段差形状部52A及び52B、スペーサ37が設けられている。
図1はこの発明の実施の形態である活性ガス生成装置の断面構造を模式的に示す説明図である。図2は活性ガス生成用電極群300の断面構成を示す説明図である。図3は実施の形態の活性ガス生成装置の主要構成部を分解した状態で示す説明図である。なお、図1~図3それぞれにXYZ直交座標系を示している。
本実施の形態の活性ガス生成装置において、交流電圧印加空間R11は放電空間68から分離して設けられており、第1及び第2の補助部材であるカバー11、カバー12及び冷却台13は、交流電圧印加空間R11と独立して、外部から供給される原料ガスを放電空間68に導く、原料ガス供給経路用の原料ガス流路11h、12h、13h、及び13mを有することにより、放電空間68と交流電圧印加空間R11とのガスの流れを分離している。
本実施の形態の活性ガス生成装置では、放電空間68の圧力は概ね10kPa~30kPa程度の比較的弱い弱大気圧に設定されている。なお、上記圧力設定における原料ガスとして例えば窒素ガス(100%)が考えられる。
2X 接地側電極構成部
11,12 カバー
13 冷却台
2m,11h,12h,13h,13m 原料ガス流路
11e パージガス排出口
11p パージガス供給口
11w,12w,13w 冷却水経路
300 活性ガス生成用電極群
Claims (4)
- 第1の電極構成部(1X)と前記第1の電極構成部の下方に設けられる第2の電極構成部(2X)とを有する活性ガス生成用電極群(300)と、前記第1及び第2の電極構成部に前記第1の電極構成部が高電圧となるように交流電圧を印加する交流電源部(5)とを有する活性ガス生成装置であって、
前記第1の電極構成部は、第1の誘電体電極(110)と前記第1の誘電体電極の上面上に形成される第1の金属電極(100H,100L)とを有し、前記第2の電極構成部は、第2の誘電体電極(210)と前記第2の誘電体電極の下面上に形成される第2の金属電極(200H,200L)とを有し、前記交流電圧の印加により前記第1及び第2の誘電体電極が対向する誘電体空間内において、前記第1及び第2の金属電極が平面視重複する領域である放電空間形成領域を放電空間として含み、
前記交流電源部による前記交流電圧の印加により、前記放電空間に放電現象を発生させ、前記放電空間に供給された原料ガスを活性化して得られる活性ガスが前記第2の電極構成部に設けられたガス噴出口(25)から噴出され、
前記活性ガス生成装置は、
前記活性ガス生成用電極群の側面及び上面を取り囲むように設けられる第1の補助部材(11,12)と、
上部の主要面上に前記活性ガス生成用電極群及び前記第1の補助部材を配置する第2の補助部材(13)とを備え、
前記第1及び第2の補助部材によって、前記活性ガス生成用電極群との間に前記放電空間と分離して交流電圧印加空間(R11)が形成され、前記第2の補助部材は、前記ガス噴出口から噴出される活性ガスを通過させる補助部材用ガス排出口(13k)を有し、前記第1及び第2の補助部材は一体的に連結され、
前記活性ガス生成装置は、
前記活性ガス生成用電極群及び前記第2の補助部材の全てと、前記第1の補助部材の少なくとも一部とを収容する空洞部を有する金属製の筐体(14)をさらに備え、前記筐体は前記補助部材用ガス排出口を通過する活性ガスを外部に排出する筐体用ガス排出口(14k)を有し、前記筐体と前記第1及び第2の補助部材との間に筐体接触空間(R14)が設けられ、
前記第1及び第2の補助部材は、前記交流電圧印加空間と独立して、外部から供給される原料ガスを前記放電空間に導く、原料ガス供給経路用の原料ガス流路(11h,12h,13h,13m)を有することにより、前記放電空間と前記交流電圧印加空間とのガスの流れを分離し、
前記活性ガス生成装置は、さらに 以下の特徴(1)~(5)を有する、
(1) 前記第2の電極構成部が前記第1の電極構成部を支持する態様で前記活性ガス生成用電極群が構成される、
(2) 前記第1の誘電体電極は、前記放電空間形成領域以外の放電空間外領域において下方に突出する段差部(115H,115M,115L)を有し、前記段差部の形成高さによって前記放電空間のギャップ長が規定される、
(3) 前記第1及び第2の誘電体電極はそれぞれ前記放電空間形成領域の厚みを、前記放電空間外領域より薄く形成する、
(4) 前記筐体は空洞部外の上面のみにおいて、前記第1の補助部材と締結することにより、前記第1の補助部材の側面及び前記第2の補助部材の底面に接触することなく、空洞部内に前記筐体接触空間を形成する、
(5) 前記第1及び第2の補助部材は全て金属材料で構成される、
活性ガス生成装置。 - 請求項1記載の活性ガス生成装置であって、
前記第1及び第2の補助部材は、外部から供給される冷却水を前記第2の補助部材に導く、冷却水流通経路用の冷却水経路(11w,12w,13w)を有することを特徴とする、
活性ガス生成装置。 - 請求項1記載の活性ガス生成装置であって、
前記第1の補助部材は外部から原料ガス以外の第2のガスを前記交流電圧印加空間に供給する第2ガス供給口(11p)をさらに有し、前記第2ガス供給口は前記原料ガス流路と独立して設けられる、
活性ガス生成装置。 - 請求項1から請求項3のうち、いずれか1項に記載の活性ガス生成装置であって、
前記放電空間の圧力に比べ、前記交流電圧印加空間の圧力を高く設定したことを特徴とする、
活性ガス生成装置。
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PCT/JP2018/000254 WO2019138456A1 (ja) | 2018-01-10 | 2018-01-10 | 活性ガス生成装置 |
EP18900159.7A EP3740045B1 (en) | 2018-01-10 | 2018-01-10 | Active gas generation apparatus |
CN201880084691.4A CN111527796B (zh) | 2018-01-10 | 2018-01-10 | 活性气体生成装置 |
KR1020207019582A KR102465845B1 (ko) | 2018-01-10 | 2018-01-10 | 활성 가스 생성 장치 |
US16/764,898 US11239059B2 (en) | 2018-01-10 | 2018-01-10 | Active gas generation apparatus |
JP2019565101A JP6821281B2 (ja) | 2018-01-10 | 2018-01-10 | 活性ガス生成装置 |
TW107118297A TWI675121B (zh) | 2018-01-10 | 2018-05-29 | 活性氣體生成裝置 |
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US (1) | US11239059B2 (ja) |
EP (1) | EP3740045B1 (ja) |
JP (1) | JP6821281B2 (ja) |
KR (1) | KR102465845B1 (ja) |
CN (1) | CN111527796B (ja) |
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Cited By (2)
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JP7080575B1 (ja) * | 2020-12-24 | 2022-06-06 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
WO2024084640A1 (ja) | 2022-10-20 | 2024-04-25 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
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EP3806586B1 (en) * | 2018-05-30 | 2022-07-13 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Active gas generation device |
US11942310B2 (en) | 2019-11-12 | 2024-03-26 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Active gas generation apparatus |
KR102524433B1 (ko) * | 2019-11-27 | 2023-04-24 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 활성 가스 생성 장치 |
US20230034041A1 (en) * | 2020-12-07 | 2023-02-02 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Active gas generation apparatus |
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KR20220113468A (ko) | 2020-12-24 | 2022-08-12 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 활성 가스 생성 장치 |
WO2024084640A1 (ja) | 2022-10-20 | 2024-04-25 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
JP7481786B1 (ja) | 2022-10-20 | 2024-05-13 | 株式会社Tmeic | 活性ガス生成装置 |
KR20240072264A (ko) | 2022-10-20 | 2024-05-23 | 가부시키가이샤 티마이크 | 활성 가스 생성 장치 |
Also Published As
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US11239059B2 (en) | 2022-02-01 |
JP6821281B2 (ja) | 2021-01-27 |
EP3740045A1 (en) | 2020-11-18 |
TW201930637A (zh) | 2019-08-01 |
TWI675121B (zh) | 2019-10-21 |
JPWO2019138456A1 (ja) | 2020-10-01 |
KR102465845B1 (ko) | 2022-11-11 |
EP3740045B1 (en) | 2022-09-28 |
KR20200096607A (ko) | 2020-08-12 |
US20200343078A1 (en) | 2020-10-29 |
CN111527796A (zh) | 2020-08-11 |
EP3740045A4 (en) | 2021-09-29 |
CN111527796B (zh) | 2022-08-19 |
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